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TWI370850B - - Google Patents

Info

Publication number
TWI370850B
TWI370850B TW097100412A TW97100412A TWI370850B TW I370850 B TWI370850 B TW I370850B TW 097100412 A TW097100412 A TW 097100412A TW 97100412 A TW97100412 A TW 97100412A TW I370850 B TWI370850 B TW I370850B
Authority
TW
Taiwan
Application number
TW097100412A
Other languages
Chinese (zh)
Other versions
TW200907087A (en
Inventor
Michio Sato
Yasuo Kohsaka
Takashi Nakamura
Nobuaki Nakashima
Toshiya Sakamoto
Fumiyuki Kawashima
Original Assignee
Toshiba Kk
Toshiba Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk, Toshiba Materials Co Ltd filed Critical Toshiba Kk
Publication of TW200907087A publication Critical patent/TW200907087A/en
Application granted granted Critical
Publication of TWI370850B publication Critical patent/TWI370850B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW97100412A 2007-01-05 2008-01-04 Sputtering target and method for production thereof TW200907087A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007000461 2007-01-05
JP2007257531 2007-10-01

Publications (2)

Publication Number Publication Date
TW200907087A TW200907087A (en) 2009-02-16
TWI370850B true TWI370850B (en) 2012-08-21

Family

ID=39588274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97100412A TW200907087A (en) 2007-01-05 2008-01-04 Sputtering target and method for production thereof

Country Status (3)

Country Link
JP (2) JP5215192B2 (en)
TW (1) TW200907087A (en)
WO (1) WO2008081585A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI595105B (en) * 2013-02-14 2017-08-11 三菱綜合材料股份有限公司 Sputtering target for forming protective film and laminated wiring film

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
US20100108503A1 (en) * 2008-10-31 2010-05-06 Applied Quantum Technology, Llc Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same
JP2012161156A (en) * 2011-01-31 2012-08-23 Toshiba Corp Gas insulation switchgear
DE102011012034A1 (en) 2011-02-22 2012-08-23 Heraeus Materials Technology Gmbh & Co. Kg Tubular sputtering target
JP5889549B2 (en) * 2011-06-17 2016-03-22 株式会社東芝 Current-carrying member for gas insulated switchgear
US8703233B2 (en) 2011-09-29 2014-04-22 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets by cold spray
JP5826283B2 (en) * 2011-10-14 2015-12-02 株式会社アルバック Method for manufacturing target assembly
JP6602550B2 (en) * 2014-04-28 2019-11-06 株式会社アライドマテリアル Material for sputtering target
AT14346U1 (en) 2014-07-08 2015-09-15 Plansee Se Target and method of making a target
CZ306441B6 (en) * 2014-12-05 2017-01-25 Safina, A.S. A method of manufacturing a metal body with a homogeneous, fine-grained structure using the cold spray technology; the metal body thus produced; and a method of repairing the dedusted metal bodies used
TWI655996B (en) * 2015-05-15 2019-04-11 美商萬騰榮公司 Method for preparing a surface of a sputter target
JP6649245B2 (en) 2016-12-28 2020-02-19 株式会社コベルコ科研 Repair method of backing plate for sputtering target and repaired backing plate
JP7225170B2 (en) * 2020-08-05 2023-02-20 松田産業株式会社 Ag alloy cylindrical sputtering target, sputtering apparatus, and method for manufacturing electronic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06158303A (en) * 1992-11-20 1994-06-07 Mitsubishi Materials Corp Target for sputtering and its produciton
JP3755159B2 (en) * 1995-03-08 2006-03-15 住友金属鉱山株式会社 Oxide sintered body
JP3212024B2 (en) * 1996-11-14 2001-09-25 日立金属株式会社 Target material for Al-based sputtering and method for producing the same
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
JP3030287B1 (en) * 1998-10-09 2000-04-10 株式会社協同インターナショナル Method for cleaning film forming apparatus, method for cleaning sputtering target, and cleaning apparatus used for these
JP3895277B2 (en) * 2000-11-17 2007-03-22 日鉱金属株式会社 Sputtering target bonded to a sputtering target or backing plate with less generation of particles, and method of manufacturing the same
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
JP2005002364A (en) * 2003-06-09 2005-01-06 Mitsui Mining & Smelting Co Ltd Sputtering target and manufacturing method therefor
JP4851700B2 (en) * 2004-09-30 2012-01-11 株式会社東芝 Components for vacuum film forming apparatus and vacuum film forming apparatus
US20060121187A1 (en) * 2004-12-03 2006-06-08 Haynes Jeffrey D Vacuum cold spray process
WO2006067937A1 (en) * 2004-12-24 2006-06-29 Nippon Mining & Metals Co., Ltd. Sb-Te ALLOY SINTERING PRODUCT TARGET AND PROCESS FOR PRODUCING THE SAME
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI595105B (en) * 2013-02-14 2017-08-11 三菱綜合材料股份有限公司 Sputtering target for forming protective film and laminated wiring film

Also Published As

Publication number Publication date
WO2008081585A1 (en) 2008-07-10
JP5215192B2 (en) 2013-06-19
TW200907087A (en) 2009-02-16
JPWO2008081585A1 (en) 2010-04-30
JP2013032597A (en) 2013-02-14
JP5571152B2 (en) 2014-08-13

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