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TW498162B - Compliant probe apparatus - Google Patents

Compliant probe apparatus Download PDF

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Publication number
TW498162B
TW498162B TW89112199A TW89112199A TW498162B TW 498162 B TW498162 B TW 498162B TW 89112199 A TW89112199 A TW 89112199A TW 89112199 A TW89112199 A TW 89112199A TW 498162 B TW498162 B TW 498162B
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Taiwan
Prior art keywords
probe
tip
scope
patent application
top surface
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TW89112199A
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Chinese (zh)
Inventor
Stefano Thomas H Di
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Phicom Corp
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A mechanically compliant probe for electrically connecting to contact pads on microelectronic devices. The probe can be used for burn-in of integrated circuits at the wafer level. Additional applications include probe cards for testing integrated circuits and sockets for flip-chips. One configuration of the probe includes a probe tip (81), which is held on an extension arm (82) projecting laterally from an elongated flat spring (83). The spring is supported above a substrate (89) by posts (85) such that the probe tip is free to move vertically in response to a contact force on the probe tip. Deflection of the probe tip is compliantly limited by bending and torsional flexure of the sheet spring. Mechanical compliance of the tip allows arrays of the probe to contact pads on integrated circuits where the pads are not precisely planar.

Description

498162 A7498162 A7

五、發明說明(1) 相關申請案的交叉參考 本案使用同在審查中之申請案名稱「接觸裝置」。 發明領域 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於微電子元件的老化測試及測試,特別係 關於各別晶片及完整晶圓於老化測試及測試期間用以連結 電氣信號至積體電路的接觸總成。 發明背景 微電子元件於製造期間接受一系列測試程序俾證實功 能及可靠性。測試程序習知包括晶圓探針測試,其中微電 子元件晶片於由晶圓切晶粒且被封裝之前經過測試決定各 晶片的操作。由長懸臂鋼絲組成的探針卡用於晶圓層面測 試一或多個晶片。 經濟部智慧財產局員工消費合作社印製 典型’於圓探針測试時晶圓上的晶片並非全部皆可 操作’結果導致低於100%良好裝置的良率。晶圓被切晶 粒成為各別晶片,良好晶片組裝成為封裝體。封裝後的裝 置藉載入老化測試板的容座内部以及於125°C至150。(:電操 作一段老化測試時間8至7 2小時,俾誘使缺陷裝置的故障 ’而接受動態方式的老化測試。老化測試加速可能造成裝 置早天或早期故障的故障機構,允許此等瑕疵裝置於在商 業上使用前藉功能電氣測試而篩檢出。 完整功能測試係於封裝後的裝置進行,封裝裝置於各 種速度測試俾以最高作業速度各別分類。分立封裝裝置的 測試也允許免除老化測試過程中任何裝置的故障。封裝裝 置的老化測試之測試係經由利用特別適合老化測試條件以 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 五、發明說明(2 ) 及尚速測試的容座達成。習知製法昂貴費時,原因在於需 要一組几長步驟重覆處置之測試各別分立裝置結果造成裝 置的總製造時間延長數週之久。 經由於晶圓被切晶粒成為分立裝置之前接受老化測試 及測試可獲得成本及處理時間二方面的顯著優點、經由於 晶圓切晶粒成為分立裝置前將晶粒大小封裝體製造於晶園 上的各裝置上可得成本及處理時間的額外節省。半導體業 界多方面徹底努力試圖開發晶圓層面封裝、老化測試及測 試的有效方法俾獲得微電子元件製程大為簡化及縮短的優 點。為了獲得此等效果,需要設置於晶片由晶圆切晶粒成 為各別分立裝置之前進行老化及速度測試晶片之裝置。 習知懸臂鋼絲探針不適合進行晶圓上裝置的老化及速 度測”式@ #鋼絲探針太長太魔大幾乎無法同時接觸晶圓 上之全部裝置,如對晶圓上全部裝置㈣進行老化測試所 而此外長懸臂鋼絲探針不適合高速裝置的功能測試, 原因在於包含探針細長平行鋼絲的自行及交互電感高。 經濟部智慧財產局員工消費合作社印製 小型向性能探針其製造成本低為晶圓老化及測試程序 的實際應用所需。為了用於晶圓老化測試及測試,探針必 須當置於未切晶粒晶圓上時可靠地接觸接受測試的裝置上 的王襯墊。接觸晶圓的探針必須可對裝置上的各概塾提 供電接觸’此處晶®表面上的塾高度不等。此外,探針必 須穿過接觸襯塾表面上任何氧化物層俾於各襯塾做可靠的 電接觸。曾經嘗試多種辦法來提供具有成本效益且可靠的 探測晶圓之老化峨及測試的裝置但未能完功。 297公釐) 本紙張尺度適財關冢標準(CNS)A4規格(2$ 498162 A7 B7 五、發明說明(3 ) 多方面嘗試提供小型垂直依從性探針用於可靠的接觸 晶圓上各裝置的襯墊。根據David R. Robillard及Robert L. Michaels之美國專利第4,189,825號提示之發明,提供懸臂 探針用於測試積體電路裝置。第1圖中,懸臂26支持尖銳 梢端26於晶片23的鋁接觸襯墊24上方。依從性構件25被向 下壓迫而移動梢端26成為接觸襯墊24。襯墊24上的氧化鋁 層被尖銳梢端26刺穿而介於梢端26與襯墊24的鋁金屬間做 電接觸。小型懸臂樑的鋼性通常不足以施力至梢端足夠時 期穿透接觸襯墊上的鋁氧化物層而無需任何外來施力裝置 至懸臂樑。玻璃、矽、陶瓷材料以及鎢製成的懸臂樑曾經 以多種配置嘗試但皆未能提供具有足夠力量及撓性的老化 測試用探針。 第2 A圖顯示之撓性構件探針述於「撓性接觸探針」, IBM技術揭示公報,1972年10月,1513頁。撓性電介質膜 32包括終端33其適合與積體電路的襯墊做電接觸。終端33 利用附著於終端33的接觸襯墊35之撓性線34連結而測試電 子裝置。製造於撓性聚醯亞胺薄片上探針係於Lesiie等人 之IEEE國際測試會議議事錄(1988年)敘述。撓性薄片允許 有限量的垂直運動來配合接受測試的晶圓上積體電路之接 線襯墊高度變化。例如Leslie等人所述之膜探針提供連結 至積體電路晶片進行高性能測試。但,膜的形穩性不足以 允許於老化測试溫度週期對整個晶圓上的全部概塾做接觸 〇 薄的二氧化矽膜上接觸的製造顯示第2B圖,如Gienn j 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) <請先閱讀背面之注意事項再填寫本頁) * _ --------訂-------— |線< 經濟部智慧財產局員工消費合作社印製 6 經濟部智慧財產局員工消費合作社印製 A7 ---〜____B7____ 五、發明說明(4 )V. Description of the invention (1) Cross-reference of related applications This application uses the same name as the "contact device" in the application under review. FIELD OF THE INVENTION (Please read the notes on the back before filling out this page) This invention relates to the aging test and testing of microelectronic components, especially the individual wafers and complete wafers used to connect electrical signals to Contact assembly for integrated circuits. BACKGROUND OF THE INVENTION Microelectronic components undergo a series of test procedures during manufacturing to verify functionality and reliability. The test procedure is known to include wafer probe testing, in which microelectronic device wafers are tested to determine the operation of each wafer before being cut from the wafer and packaged. A probe card consisting of a long cantilever wire is used to test one or more wafers at the wafer level. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Typical ‘Not all wafers on the wafer are operational during the circular probe test’ The result is a yield of less than 100% good device. The wafers are diced into individual wafers, and good wafers are assembled into packages. The packaged device is loaded inside the receptacle of the burn-in test board and at 125 ° C to 150 ° C. (: Electrical operation for a period of aging test time of 8 to 72 hours, to induce the failure of the defective device 'and accept the dynamic aging test. Acceleration of the aging test can cause early failure or early failure of the faulty mechanism, allowing such defective devices Before commercial use, it was screened out by functional electrical test. Full functional test is performed on the packaged device. The packaged device is tested at various speeds and classified at the highest operating speed. The test of the discrete packaged device also allows to avoid aging. Failure of any device during the test. The test of the aging test of the packaged device is performed by using the paper conditions that are particularly suitable for the aging test under 4 national standards (CNS) A4 (210 X 297 mm). 5. Description of the invention (2 ) And the speed test is achieved. The conventional manufacturing method is expensive and time-consuming, because the test requires separate sets of several long steps to repeatedly dispose of the test results of individual discrete devices, resulting in an increase in the total manufacturing time of the device by several weeks. The diced die undergoes aging test and test before it becomes a discrete device. Both cost and processing time can be obtained. The significant advantages of the surface, the additional cost and processing time savings that can be obtained by manufacturing the chip-size package on each device on the wafer before cutting the wafers into discrete devices. The semiconductor industry has made extensive efforts to develop crystals Effective methods for round-level packaging, burn-in testing, and testing: Obtain the advantages of greatly simplified and shortened microelectronic device manufacturing processes. In order to obtain these effects, it is necessary to set the burn-in and burn-out before the chip is cut from the wafer into individual devices Device for speed test wafer. It is known that the cantilever wire probe is not suitable for aging and speed measurement of the device on the wafer. ”@@ The wire probe is too long and the magic is almost impossible to contact all the devices on the wafer at the same time, such as the wafer All of the above devices are subjected to aging test. In addition, the long cantilever wire probe is not suitable for the functional test of high-speed devices, because the high self-propagation and interactive inductance of the long and thin parallel wires including the probe are high. The low manufacturing cost of probes is required for the practical application of wafer aging and test procedures. Wafer aging test and test, the probe must reliably contact the king pad on the device under test when it is placed on the uncut wafer. The probe that contacts the wafer must be available to each device on the device. The electrical contacts' here vary in height on the surface of the crystal. In addition, the probe must pass through any oxide layer on the surface of the contact liner and make reliable electrical contact on each liner. Various methods have been tried to provide cost-effective Effective and reliable device for detecting aging and testing of wafers but failed to complete the work. 297 mm) The paper size is suitable for the financial standard (CNS) A4 specification (2 $ 498162 A7 B7 V. Description of the invention (3) Various attempts have been made to provide small vertical compliance probes for pads that reliably contact various devices on a wafer. According to the invention suggested by David R. Robillard and Robert L. Michaels, US Patent No. 4,189,825, cantilever probes are provided for Test integrated circuit devices. In the first figure, the cantilever 26 supports the sharp tip 26 above the aluminum contact pad 24 of the wafer 23. The compliance member 25 is pressed downward to move the tip end 26 into the contact pad 24. The aluminum oxide layer on the gasket 24 is pierced by the sharp tip 26 and an electrical contact is made between the tip 26 and the aluminum metal of the gasket 24. The rigidity of small cantilever beams is usually not sufficient to apply the force to the tip for a sufficient time to penetrate the aluminum oxide layer on the contact pad without any external force application device to the cantilever beam. Cantilever beams made of glass, silicon, ceramic materials, and tungsten have been tried in a variety of configurations but have failed to provide probes for weathering tests with sufficient strength and flexibility. The flexible member probe shown in Figure 2A is described in "Flexible Contact Probes", IBM Technical Disclosure Bulletin, October 1972, p. 1513. The flexible dielectric film 32 includes a terminal 33 adapted to make electrical contact with the pad of the integrated circuit. The terminal 33 is connected by a flexible wire 34 of a contact pad 35 attached to the terminal 33 to test the electronic device. Probes made on flexible polyimide sheets are described in the Proceedings of the IEEE International Test Conference (1988) by Lesiei et al. The flexible sheet allows a limited amount of vertical movement to match the height variation of the wiring pads of the integrated circuit on the wafer under test. Membrane probes such as those described by Leslie et al. Provide attachment to integrated circuit wafers for high performance testing. However, the shape stability of the film is not sufficient to allow contact with all of the entire wafer during the aging test temperature cycle. The manufacture of the contact on a thin silicon dioxide film is shown in Figure 2B, such as Gienn. This paper size is applicable China National Standard (CNS) A4 specification (210 X 297 mm) < Please read the notes on the back before filling this page) * _ -------- Order ----------- | line < Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 --- ~ ____ B7____ V. Description of the Invention (4)

Leedy之美國專利第5,225,771號所述。二氧化矽膜4〇之形 穩性比聚醯亞胺更佳,如此略為改善於老化測試期間配合 服貼晶圓接觸襯塾的形穩性問題。探針梢端41藉貫穿膜4〇 hi 的通孔44連結至電路軌線45,該電路軌線係連結至電介質 •薄膜43上方的額外電路層42。測試探針於二氧化矽膜4〇上 有限地垂直依從性允許探針陣列可靠地用於半導體晶圓上 之裝置的老化測試。 半導體晶圓上老化測試用探針陣列的製造述於美國專 利第4,585,991號,如第3A及3B圊分別顯示其頂視平面圓 及剖面圖。探針51為角錐形藉臂54附著至半導體晶圓基材 52。材料53由半導體晶圓52移開俾以機械方式隔離探針51 。第3A圖之探針提供有限的垂直移動,但不允許基材上 有任何空間做為動態老化測試要求的探針陣列連結至測試 電子裝置需要的佈線空間。 對裝置接觸襯墊提供撓性探針之方法涉及使用撓性導 | 線或支柱來連結測試電路至襯墊。第4 A圓顯示之撓性探 針述於Gobina Das等之美國專利第5,977,787號。探針60為 • 彎曲樑,早期概略述於Ronald Bove之美國專利第3,806,801 號。探針60自適應於用於晶園上的裝置之老化測試。探針 60由導件61及62夾持,導件具有膨脹係數類似接受測試的 晶圓膨脹係數。探針上端63偏位一段小距離60而提供樑60 的確切偏轉模式。雖然彆曲樑極為適合測試各別積體電路 晶片,但用於需要數千個接觸的晶園老化測試時太過昂貴 。進一步,彎曲樑探針之電氣性能有限,原因在於充份彆 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------— — — — — — ·1111111 ^ ·1111111 (請先閱讀背面之注意事項再填寫本頁) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(5 ) 曲樑需要的長度。 另一項使用撓性支柱之辦法係示於第4B圖,揭示於Leedy is described in US Patent No. 5,225,771. The shape stability of the silicon dioxide film 40 is better than that of polyimide, which slightly improves the shape and stability of the contact wafer of the service wafer during the aging test. The probe tip 41 is connected to a circuit track 45 through a through hole 44 passing through the film 40 hi. This circuit track is connected to an additional circuit layer 42 above the dielectric film 43. The limited vertical compliance of the test probes on the silicon dioxide film 40 allows the probe arrays to be reliably used for burn-in testing of devices on semiconductor wafers. The fabrication of a probe array for a burn-in test on a semiconductor wafer is described in U.S. Patent No. 4,585,991. For example, 3A and 3B 圊 show a top plan circle and a cross-sectional view, respectively. The probe 51 is a pyramid-shaped arm 54 attached to a semiconductor wafer substrate 52. The material 53 is removed from the semiconductor wafer 52 and the probe 51 is mechanically isolated. The probe in Figure 3A provides limited vertical movement, but does not allow any space on the substrate as the probe array required for dynamic burn-in testing to be connected to the wiring space required for testing electronic devices. A method of providing a flexible probe to a device contact pad involves using a flexible lead or post to attach the test circuit to the pad. The flexible probe shown by circle A is described in US Patent No. 5,977,787 to Gobina Das et al. Probe 60 is a curved beam, as outlined earlier in U.S. Patent No. 3,806,801 by Ronald Bove. The probe 60 is adapted to an aging test for a device on a wafer. The probe 60 is held by the guides 61 and 62, and the guide has a coefficient of expansion similar to that of the wafer under test. The upper end 63 of the probe is offset by a small distance 60 to provide the exact deflection pattern of the beam 60. Although Bezier beams are extremely suitable for testing individual integrated circuit wafers, they are too expensive to use in wafer burn-in tests that require thousands of contacts. Furthermore, the electrical performance of curved beam probes is limited because the paper size is fully compliant with Chinese National Standard (CNS) A4 (210 X 297 mm) ----------- — — — — — 1111111 ^ · 1111111 (Please read the precautions on the back before filling out this page) 498162 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs V. Description of Invention (5) Length required for curved beams. Another method of using flexible pillars is shown in Figure 4B, which is disclosed in

Arnold W· Yanof 及 William Dauksher 之美國專利第 5,513,430號。第4B圖顯示支柱66形式之撓性探針其可響 應加諸探針梢端67之例而彆曲。支柱66相對於基材69以某 個夾角成形俾允許其響應來自匹配的接觸襯墊加諸梢端67 之例做垂直方向彎曲。支柱66由底部終端68之梢端67具有 推拔65俾輔助彎曲。 又另一種使用撓性導線及柱之辦法顯示於第4C囷, 揭示於Benjamin N· Eldridge等人之美國專利第5,878,486 號。第4C圖顯示之探針包含一探針梢端72於彈簧鋼絲71 上,彈簧鋼絲彎曲為特定形狀俾輔助彎直。鋼絲71藉習知 接線73接合至基材74。第4C圖所示該型探針需要彈簧長 度長俾達成晶圓老化測試需要的接觸力及依從性。此外, 此種使用各別鋼絲的探針用於各晶圓需要測試數千個探針 的晶圓老化測試時太過昂貴。 又一提供撓性探針之辦法涉及使用撓性層插置於測試 頭與欲測試裝置間。因此測試頭的終端電連結至裝置的匹 配接觸程度。Willem Luttmer之美國專利第3,795,037號所 述電連接器利用撓性導體嵌置於彈性體材料内部因而介於 匹配成對導電陸地間做電連結,導電陸地被壓迫接觸電連 接器的頂面及底面。多種撓性導體的變化裡包括斜面導線 、導電填補聚合物、鍍敷支柱以及其它導電裝置與彈性體 材料俾形成依從性插置層。 本紙張尺度適用中國國家標準(CNS〉A4規格(210 X 297公爱) *·. · --Η---;--------------訂 ---------線 <請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 498162 A7 ________B7_ _ 五、發明說明(6 ) 上列辦法及其它嘗試皆未能成功地提供高性能探針, 其允許於晶圓被切晶粒成為各別晶片之前以經濟方式進行 晶圓上的微電子元件的老化測試及速度測試。 發明概述 -根據本發明,揭示一種小型依從性探針,其包括一導 電性梢端設置於一支持面上,其設置方式允許探針上的梢 端相對於支持面做撓性移動。探針梢端響應於匹配接觸襯 墊偏向牴住探針梢端時施加的力而做垂直移動。探針的接 觸依從性允許介於探針與微電子元件上對應接觸墊間做電 接觸’其中機械依從性可配合接觸襯墊的高度變化。 本發明之目的係提供一種於未切晶粒的晶圓上與微電 子元件的接觸襯墊做電接觸之方法及裝置俾於晶圓被切晶 粒成為各晶片之前接受裝置老化測試。根據本發明之依從 性探針允許做出可靠的電連結同時全部接觸襯墊排齊於晶 圓表面上,因此晶圓上的微電子元件可以經濟有效方式進 I 行老化測試。 本發明之另一目的係提供一種用於未切晶粒晶圓上的 微電子元件之老化測試的夾緊裝置。夾緊裝置電連結各裝 置上的接觸襯墊而驅動電路,電路係於高溫動態老化測試 期間視需要供給電信號給裝置。電信號其電源同時供給晶 圓上的全部晶片。夾緊裝置的探針之機械依從性可配合接 觸襯墊鬲度以及探針梢端高度的變化,因此各探針梢端於 整個老化測試溫度週期期間保持接觸及匹配接觸襯墊。 本發明之又另一目的係提供一種電探針卡其允許高度 ^--------t---------^ (請先閱讀背面之注意事項再填寫本頁)US Patent No. 5,513,430 to Arnold W. Yanof and William Dauksher. Fig. 4B shows a flexible probe in the form of a strut 66 which can be flexed in response to the addition of a probe tip 67. The post 66 is formed at an angle with respect to the base material 69, allowing it to bend vertically in response to the example from the mating contact pads plus tips 67. The strut 66 has a push-out 65 俾 from the tip end 67 of the bottom terminal 68 to assist in bending. Yet another method of using flexible wires and posts is shown in Section 4C 囷, disclosed in US Patent No. 5,878,486 to Benjamin N. Eldridge et al. The probe shown in FIG. 4C includes a probe tip 72 on a spring wire 71. The spring wire is bent into a specific shape and assisted in straightening. The wire 71 is bonded to the base material 74 by a conventional wire 73. The probe shown in Figure 4C requires a long spring length to achieve the contact force and compliance required for wafer aging tests. In addition, such probes using individual wires are too expensive for wafer burn-in tests that require thousands of probes per wafer. Yet another approach to providing a flexible probe involves using a flexible layer between the test head and the device to be tested. The terminal of the test head is therefore electrically connected to the matching contact level of the device. The electrical connector described in US Patent No. 3,795,037 by Willem Luttmer uses a flexible conductor embedded in the elastomer material to make an electrical connection between matched pairs of conductive land. The conductive land is pressed to contact the top and bottom surfaces of the electrical connector. . A variety of flexible conductor variations include beveled conductors, conductive fill polymers, plated struts, and other conductive devices that form a compliance interposer with an elastomer material. This paper size applies to Chinese national standards (CNS> A4 specification (210 X 297 public love) * ·. · --Η ---; -------------- Order ----- ---- Line < Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 ________B7_ _ 5. Description of the invention (6) The methods listed above and other attempts have not been successful Ground to provide high-performance probes, which allow economical aging and speed testing of microelectronic components on a wafer before the wafer is diced into individual wafers. SUMMARY OF THE INVENTION-According to the present invention, a small compliance probe is disclosed that includes a conductive tip disposed on a support surface in a manner that allows the tip on the probe to flexibly move relative to the support surface. The probe tip moves vertically in response to the force applied when the mating contact pad is biased toward the probe tip. The contact compliance of the probe allows electrical contact between the probe and the corresponding contact pad on the microelectronic component ', wherein the mechanical compliance can be adapted to the height change of the contact pad. The object of the present invention is to provide a method and device for making electrical contact with a contact pad of a microelectronic element on an uncut wafer, and subject the device to an aging test before the wafer is cut into chips. The compliance probe according to the present invention allows a reliable electrical connection to be made while all the contact pads are aligned on the wafer surface, so the microelectronic components on the wafer can be subjected to burn-in tests in a cost-effective manner. Another object of the present invention is to provide a clamping device for aging test of microelectronic components on an uncut wafer. The clamping device electrically connects the contact pads on each device to drive the circuit. The circuit is provided with an electric signal to the device during the high-temperature dynamic aging test as needed. The electrical signal is supplied to all wafers on the wafer at the same time. The mechanical compliance of the probes of the clamping device can be matched with changes in the contact pad height and probe tip height, so each probe tip remains in contact with and matches the contact pad during the entire aging test temperature cycle. Yet another object of the present invention is to provide an electric probe card with a permissible height ^ -------- t --------- ^ (Please read the precautions on the back before filling this page)

經濟部智慧財產局員工消費合作社印製 498162 A7 B7____ 五、發明說明(7 ) 測試未經封裝的微電子元件。如本揭示内容教示的小型依 從性探針用於暫時性連結至裝置上的對應襯墊俾外加電測 試信號給該裝置以及測量來自該裝置的電信號。依從性探 針的尺寸小允許高速通過電信號來去於裝置間而無由於先 前技術使用的導線探針關聯的過度電感或電容造成的耗損 〇 本發明之又一目的係提供一種老化測試、測試及操作 微電子元件之方法及裝置,此處元件上的電接觸係設置於 元件表面之陣列區。本揭示内容教示的小型依從性探針用 於與裝置上接觸做可靠的電連結,此處接觸係排列於陣列 區。機械依從性允許各探針梢端與裝置上的匹配接觸維持 電接觸而無論於室溫或於元件的操作溫度範圍元件上接觸 之南度變化如何皆如此。 本發明之另一目的係提供連結積體電路晶片至電路用 於晶片的老化測試、測試及操作之小型容座。容座内部各 探針接觸的尺寸小允許晶片高速安裝於容座。如本揭示内 容教示的探針機械依從性允許對鋼性晶片做可靠的電連結 而極少或無封裝。根據本發明之依從性探針允許對晶片大 小封裝體及倒裝晶片建構小型而經濟的容座。 此處揭示之探針比較習知懸臂探針顯著改良,原因在 於此處揭示之探針對任何指定之探針力及探針大小提供較 見廣的探針梢端依從性運動範圍。習知懸臂探針之移動範 圍有限,限於響應指定力時探針材料所能達成的彈性限度 。懸臂探針之最大機械應力集中於懸臂材料彎曲點表面上 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 10 ^^--------------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 498162 A7 -----— B7___ 五、發明說明(8 ) 。本發明提供對指定彈簧材料及探針力於其到達該種材料 • 的彈性限度之前更寬廣的活動範圍。 '本發明經由於晶圓層面可靠地提供測試及老化測試功 能同時縮小測試夾緊裝置大小而提高微電子元件之製造效 • 率。以機械方式依從性之探針比較該探針大小提供更大的 活動範圍。此種活動範圍對帶有接觸襯墊其實質上非於同 一平面的元件做接觸而言相當重要。依從性探針梢端可彎 曲移動俾配合匹配的接觸襯墊高度變化,同時維持接觸襯 墊上探針梢端的足夠力俾確保期間做可靠的電接觸。 此等及其它本發明之目的可經由提供以機械方式依從 性的電探針而予滿足。探針梢端設置於材料之細長長條上 ’材料長條於兩端接受支撐,以及其中探針梢端係設置具 連結長條各端之支持件中心連結中線一段預定距離。如此 被支持的探針梢端可藉材料薄長條之扭轉撓性及彎曲撓性 而於垂直方向做依從性移動。 Φ 本發明經由於晶圓層面可靠地進行測試及老化測試功 能同時縮小測試夾緊裝置大小可提供微電子元件的製造效 . 率0 圖式之簡單說明 屬於本發明之特徵之新穎特色陳述於隨附之申請專利 範圍。本發明本身以及其它特色及優點經由參照後文詳細 說明連同附圖研讀將最為明瞭,附圖中: 第1圖顯示先前技術懸臂探針之剖面圖。 第2 A及2B圖顯示先前技術撓性膜探針之剖面圖。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 11 II-----— — — — — — — — — — — — I— ^ « — — — —I — I I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 498162 A7 ___B7______ 五、發明說明(9 ) 第3 A及3B圖顯示先前技術製造於矽晶圓上的探針之 視圖,此處第3A圖為探針之平面頂視圖及第3B圖為探針 之剖面圖。 第4A至4C圖顯示先前技術之撓性支柱探針。 第5圖顯示根據本發明之依從性探針之視圖。 第6圖顯示根據本發明之另一依從性探針之配置之視 圖。 第7A至7C圖顯示依從性探針之具鱧實施例,此處第 7A圖為頂視平面圖,第7B圖為探針靜止時之剖面圖,及 第7C圖為探針當由力F作用時之剖面圖。 第8A圖顯示撓性探針之一具體實施例之視圖,此時 探針梢端係由直接垂直作用力F作用。 第8B圖顯示第8A圖探針梢端隨著作用於探針梢端之 力量的改變之偏轉。 第9A至9C圖顯示依從性探針之具體實施例,此處第 9A圖為頂視平面圖,第9B圖為探針靜止時之剖面圖,以 及第9C圖為探針由力F作用時之剖面囷。 第10圖顯示依從性探針及其連結電路之實施例之視圓 〇 第11圖顯示帶有接地平面之依從性探針之具趙實施例 之視圖。 第12A至12C圖顯示依從性探針帶有其電路連結之具 體實施例,此處第12A圖為頂視平面圖,第ub囷為探針 靜止時之剖面圖以及第12C圖為當探針受力ρ作用時之剖 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------*--------I!訂·!---I--線 (請先閱讀背面之注意事項再填寫本頁) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(10 ) 面圖。 第13A至13C圖顯示根據本發明之依從性探針之另一 種設計之頂視平面圖。 第14A至14D圖顯示根據本發明之依從性探針之另一 -種設計之頂視平面圖。 第15A圖顯示用於帶有區域陣列接觸之元件進行晶圓 層面老化測試用之接觸探頭。 > 第15B圖顯示第15A圖用於具有區域陣列接觸之元件 之接觸探頭之選定區域的頂視平面圖。 第16A圖顯示帶有區域陣列接觸之元件進行晶圓層面 測試用之探針卡。 第16B圖顯示第16A圖用於帶有區域陣列接觸之元件 之探針卡的選定區域之頂視平面圖。 第Π A圖顯示操作帶有區域陣列接觸之微電子元件用 之容座。 | 第17B圖顯不第17A圖用於帶有區域陣列接觸之裝置 之容座的選定區域之頂視平面囷。 , 第18八至18D圖顯示根據本發明之用於依從性探針結 構之探針梢端。 較佳具體實施例之詳細說明 根據本發明原理,依從性探針之第一較佳具體實施例 顯示於第5圖。揭示一種探針其允許對微電子元件例如積 體電路(1C)、倒裝晶片、被動元件及晶片規模封裝體上的 接觸襯墊做可靠的電連結。探針提供探針梢端81響應梢端 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 13 — — — — — — — — — — — — — - — III — — — ^ ·1111111 (請先閱讀背面之注意事項再填寫本頁) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(11 ) 上的作用力而做挽性垂直方向移動。如此,當接觸襯塾被 壓迫接觸探針梢端81時’結構的機械依從性允許梢端與匹 配的接觸襯墊亦足夠使探針梢端81穿透襯墊上的絕緣氧化 物膜之例做接觸。探針的機械依從性可於微電子元件之一 區配合接觸概塾兩度差異’同時提供足夠力量於各探針梢 端而確保梢端與對應接觸襯墊間可靠的電連結。進一步, 襯墊的機械依從性為於測試或老化測試週期期間允許梢端 維持於對應襯墊做連結所需,此處熱膨脹造成元件及探針 支持件的麵曲。 第5圖中’探針梢端81被支持於導電材料82之橫向延 伸臂上’該臂附著於導電材料之細長撓性長條83。細長撓 性長條8 3係由支柱8 5支持於各端,支柱接合至細長長條8 3 之終端84。探針梢端81響應於垂直方向外加於梢端81之力 而做撓性移動。梢端81之垂直移動壓迫臂82且扭轉彎曲長 條83如此對梢端81加諸回復力。 第5圖所示依從性探針中,支柱81係藉襯墊86支持於 基材89上’襯墊係電連結至電路軌線87,電路執線又利用 通孔88連結至基材87的電路,通孔連結表面電路87至基材 89之各電路層。經由前述串聯連結,探針梢端8ι電連結至 基材89之電路,電路操作連結至探針的元件。於例如老化 測試等必要用途中,基材89係由矽或低度膨脹陶瓷材料製 成俾達成於老化測試使用的寬廣溫度範圍之形穩性,此處 溫度週期由25°C至150°C或更高。 用於高頻操作,由探針81至通孔接觸88之電連結設置 本紙張尺度適用中國國家標準(CNS)A4規格⑵G χ297公爱〉 厂14 ·--— (請先閱讀背面之注意事項再填寫本頁) -I ί 訂·!-線 1 498162Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 B7____ 5. Description of the Invention (7) Testing of unpackaged microelectronic components. A small compliance probe, as taught by this disclosure, is used to temporarily connect to the corresponding pad on the device, plus an electrical test signal to the device, and to measure the electrical signal from the device. The small size of the compliance probe allows high-speed electrical signals to be passed between devices without wastage due to excessive inductance or capacitance associated with the wire probes used in the prior art. Another object of the present invention is to provide an aging test, test, and Method and device for operating microelectronic components, where the electrical contacts on the components are arranged in the array area on the surface of the components. The small compliance probes taught in this disclosure are used to make reliable electrical connections with contacts on the device, where the contacts are arranged in the array area. Mechanical compliance allows each probe tip to maintain electrical contact with the mating contact on the device regardless of changes in the south of the contact at room temperature or over the component's operating temperature range. Another object of the present invention is to provide a small-sized receptacle for connecting an integrated circuit chip to a circuit for aging test, test and operation of the chip. The small contact size of each probe inside the receptacle allows the wafer to be mounted in the receptacle at high speed. The mechanical compliance of the probes as taught by this disclosure allows reliable electrical connections to rigid wafers with little or no packaging. The compliance probe according to the present invention allows the construction of small and economical receptacles for wafer size packages and flip-chips. The probes disclosed herein are a significant improvement over conventional cantilever probes because the probes disclosed herein provide a wider range of probe tip compliance motions for any given probe force and probe size. Conventional cantilever probes have a limited range of motion and are limited to the limit of elasticity that the probe material can achieve in response to a specified force. The maximum mechanical stress of the cantilever probe is concentrated on the surface of the bending point of the cantilever material. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love). 10 ^^ ------------- -^ --------- (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 -----— B7___ V. Description of Invention (8) . The invention provides a wider range of motion for a given spring material and probe force before it reaches the elastic limit of that material. 'The invention improves the manufacturing efficiency of microelectronic components by reliably providing testing and burn-in functions at the wafer level while reducing the size of the test clamping device. A mechanically compliant probe provides a larger range of motion compared to the probe size. This range of motion is important for contacting components with contact pads that are not substantially in the same plane. The compliance probe tip can be flexibly moved to match the height of the matching contact pad, while maintaining sufficient force on the probe tip on the contact pad to ensure reliable electrical contact during the period. These and other objects of the invention can be met by providing electrical probes that are mechanically compliant. The tip of the probe is arranged on an elongated strip of material. The strip of material receives support at both ends, and the probe tip is provided with a predetermined distance from the center line of the support member connecting the ends of the strip. The probe tip thus supported can move in compliance with the vertical direction by the torsional flexibility and bending flexibility of the thin strip. Φ The present invention provides reliable manufacturing of microelectronic components through the reliable testing and aging test functions at the wafer level while reducing the size of the test clamping device. Rate 0 Brief description of the diagram The novel features that are characteristic of the present invention are described in the accompanying The scope of patent application is attached. The invention itself and other features and advantages will be best understood by reference to the following detailed description and the accompanying drawings. In the drawings: FIG. 1 shows a cross-sectional view of a prior art cantilever probe. Figures 2A and 2B show cross-sectional views of prior art flexible membrane probes. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love) 11 II -----— — — — — — — — — — — I — ^ «— — — — I — II ( Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 ___B7______ V. Description of the Invention (9) Figures 3A and 3B show the probes manufactured on the silicon wafer by the prior art Figure 3A is a plan top view of the probe and Figure 3B is a cross-sectional view of the probe. Figures 4A to 4C show prior art flexible strut probes. Figure 5 shows a view of a compliance probe according to the invention. Fig. 6 shows a view of the configuration of another compliance probe according to the present invention. Figures 7A to 7C show a specific embodiment of a compliance probe, where Figure 7A is a top plan view, Figure 7B is a cross-sectional view of the probe when it is stationary, and Figure 7C is a probe when acting by force F Sectional view of the time. Fig. 8A shows a view of a specific embodiment of the flexible probe, in which the tip of the probe is acted by a direct vertical force F. Fig. 8B shows the deflection of the probe tip of Fig. 8A with changes in the force applied to the probe tip. Figures 9A to 9C show specific embodiments of the compliance probe. Here, Figure 9A is a top plan view, Figure 9B is a cross-sectional view of the probe when it is stationary, and Figure 9C is a view of the probe when force F is acting on it. Section 囷. Figure 10 shows the viewing circle of an embodiment of a compliance probe and its connection circuit. Figure 11 shows a view of a Zhao embodiment of a compliance probe with a ground plane. Figures 12A to 12C show a specific embodiment of the compliance probe with its circuit connection. Figure 12A is a top plan view, ub 囷 is a cross-sectional view of the probe when it is stationary, and Figure 12C is when the probe is subjected to The paper size of the section when the force ρ is applied is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------- * -------- I! Order! --- I-- line (Please read the notes on the back before filling out this page) 498162 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (10). Figures 13A to 13C show top plan views of another design of a compliance probe according to the present invention. Figures 14A to 14D show top plan views of another design of a compliance probe according to the present invention. Figure 15A shows a contact probe for wafer level burn-in testing of components with area array contacts. > Fig. 15B shows a top plan view of a selected area of Fig. 15A for a contact probe of a component having an area array contact. Figure 16A shows a probe card for wafer level testing of components with area array contacts. Fig. 16B shows a top plan view of a selected area of Fig. 16A for a probe card with components contacting an area array. Figure ΠA shows a receptacle for operating microelectronic components with area array contacts. Figure 17B shows the top view 囷 of Figure 17A for a selected area of a receptacle with a device with area array contacts. Figures 18A to 18D show the probe tips for the compliance probe structure according to the present invention. Detailed description of the preferred embodiment According to the principle of the present invention, the first preferred embodiment of the compliance probe is shown in FIG. A probe is disclosed that allows reliable electrical connections to microelectronic components such as integrated circuits (1C), flip-chips, passive components, and contact pads on wafer-scale packages. Probe provides probe tip 81 response tip This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 13 — — — — — — — — — — — — — — — — — — — — — ^ · 1111111 (Please read the notes on the back before filling out this page) 498162 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. The force on the invention description (11) moves vertically. In this way, when the contact liner is pressed to contact the probe tip 81, the mechanical compliance of the structure allows the tip and the matching contact pad to be sufficient to allow the probe tip 81 to penetrate the insulating oxide film on the pad. Make contact. The mechanical compliance of the probe can be matched to the contact area of the microelectronic component by a two-degree difference. At the same time, it provides sufficient force to the tip of each probe to ensure reliable electrical connection between the tip and the corresponding contact pad. Further, the mechanical compliance of the gasket is required to allow the tip to remain connected to the corresponding gasket during the test or burn-in test cycle, where thermal expansion causes the surface curvature of the element and probe support. In Fig. 5, the "probe tip 81 is supported on the laterally extending arm of the conductive material 82" and the arm is attached to the elongated flexible strip 83 of the conductive material. The elongated flexible strips 8 3 are supported at each end by pillars 8 5 which are joined to the terminals 84 of the elongated strips 8 3. The probe tip 81 is flexibly moved in response to a force applied to the tip 81 in the vertical direction. The vertical movement of the tip 81 compresses the arm 82 and twists and bends the strip 83 so as to exert a restoring force on the tip 81. In the compliance probe shown in FIG. 5, the pillar 81 is supported on the substrate 89 by a gasket 86. The gasket is electrically connected to the circuit track 87, and the circuit execution wire is connected to the substrate 87 by a through hole 88. Circuits, vias connect the surface circuits 87 to the various circuit layers of the substrate 89. Through the aforementioned series connection, the probe tip 8m is electrically connected to the circuit of the substrate 89, and the circuit operates the element connected to the probe. In essential applications such as aging tests, the substrate 89 is made of silicon or a low-expansion ceramic material. It achieves the stability of a wide temperature range used in aging tests. Here the temperature cycle is from 25 ° C to 150 ° C. Or higher. For high-frequency operation, the electrical connection setting from the probe 81 to the through-hole contact 88 This paper size is applicable to China National Standard (CNS) A4 size ⑵G χ297 public love> Factory 14 · --- (Please read the precautions on the back first (Fill in this page again) -I ί Order! -Line 1 498162

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明(I2 ) 用於使連結至探針梢端81的電感減至最低。電感迴路經由 將通孔8 8定位於探針梢端81下方而減至最低。雖然通孔$ $ 所在位置並非經常性如此理想,但於要求高頻操作之用途 ,梢端81與通孔88間距必須為小間距。 第6圖顯示依從性探針之第二具體實施例,此處第5圖 之導電臂82係由第6圖之細長薄片93之彎曲或「V」字型 節段92取代。於細長薄片93各端的終端94接合至支柱95, 支柱又停靠於基材99之襯墊96上。對梢端91之電連結係薄 片93連結至接合至支柱95之襯墊94,支柱95停靠於襯塾96 上’襯塾96藉連結至基材99之電路的電路軌線97利用通孔 98連結而做出電連結。如第6圖可知,探針梢端91係支持 於薄片93之彎曲部92,故探針梢端91中心係位在距細長薄 片93各端的支柱95間的虛擬線100某個距離。探針梢端91 上最初垂直力產生以線100表示之轴線為轴的扭矩。扭矩 造成細長薄片93之扭轉彆曲,結果造成反力作用於與最初 作用於梢端91之力的相反方向。 第7 A圖顯示第6圖說明之該類型挽性探針之第一具艘 實施例之頂視平面圖。撓性細長長條1〇3係由金属板組成 ’成形為於長條103終點包括一橫向延伸部! 〇2及於長條 103各^涵括接觸概塾1〇4。長條1〇3之導電材料係選擇為 具有高降伏強度以及最終故障時具有中等伸長率。適合使 用選自由皱-銅合金、妮、銅·錄,鉬,鍊-鈦,不鏽鋼欽 及其合金組成的組群之金屬。一種適當金屬為鈹·銅合金 ASTM規格B534號,具有降伏強度550百萬巴斯卡。另一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — — — — — — — — — — — — — ·1111111 ^ i — — — — — — (請先閱讀背面之注意事項再填寫本頁) 15 經濟部智慧財產局員工消费合作社印製 498162 A7 B7___ 五、發明說明(13 ) 種適當金屬為鈦合金Ti,8, Al,1 Mo,IV,具有降伏強 度910百萬巴斯卡。 第7圖所示探針梢端101係支持於一延伸臂102上,故 探針梢端101將響應垂直力F而於垂直方向壓迫基材1〇9。 臂102及探針梢端1〇1之作用顯示於第7B及7C圖之剖面圖 。外加至探針梢端101之力F於長條103具有扭矩,扭轉長 條及允許臂102壓迫朝向基材1〇9。如第7C囷之剖面圖所 示,探針梢端101之垂直移動係由於長條103之良偏轉及扭 轉彎曲作用所致。 探針梢端101係經由藉眾所周知的方法重覆於(1〇〇)矽 表面形成的蝕刻凹刻形成的角錐。梢端夾角54.75度係由 矽的(111)晶相學平面決定。梢端材料為鎢,形成銳利尖 硬梢端而可刺穿典型用於半導體積體電路元件之鋁接觸襯 墊上的鋁氧化物層。適合用於尖硬梢端材料係選自由鉬、 鎳合金、餓、帕里尼(Paliney)7、铑、銖、鈦、鎢及其合 金組成的組群。 尖硬探針梢端藉矽上重覆各蝕刻凹坑至轉為電接觸領 域人士眾所周知且徹底述於1973年D· A. Kiewit之公開文 獻,「科學儀器綜論」第44卷,第1741-1742頁。Kiewit說 明藉沉積錄-蝴合金於凹坑内部然後去除石夕母質材料暴露 出角錐而經由矽再現凹坑製造探針梢端。Kiewit經由以沸 騰会水合物處理表面而於矽(1〇〇)表面形成角錐形蝕刻凹 坑。 長條103係藉柱105接合至長條1〇3各端之接觸襯墊104 本紙張尺度翻中國國家標準(CNS)A4規格⑽X 297公爱y 16 — IJ-IIJI — — — — · I - I I I I I ^ ·1111111 (請先Μ讀背面之注意事項再填寫本頁)5. Description of the Invention (I2) is used to minimize the inductance connected to the probe tip 81. The inductance loop is minimized by positioning the through hole 88 under the probe tip 81. Although the location of the through hole $$ is not always so ideal, for applications requiring high frequency operation, the distance between the tip 81 and the through hole 88 must be small. Fig. 6 shows a second embodiment of the compliance probe. Here, the conductive arm 82 of Fig. 5 is replaced by a curved or "V" shaped segment 92 of the elongated sheet 93 of Fig. 6. Terminals 94 at each end of the elongated sheet 93 are joined to the pillars 95, which in turn rest on the pads 96 of the substrate 99. The electrical connection system sheet 93 to the tip 91 is connected to the pad 94 bonded to the pillar 95, and the pillar 95 rests on the liner 96. The liner 96 utilizes the through-hole 98 through the circuit track 97 of the circuit connected to the substrate 99. To make electrical connections. As can be seen in Fig. 6, the probe tip 91 is supported by the curved portion 92 of the sheet 93, so the center of the probe tip 91 is located at a distance from the virtual line 100 between the pillars 95 at each end of the thin sheet 93. The initial vertical force on the probe tip 91 generates a torque with the axis indicated by the line 100 as an axis. The torsion causes twisting of the elongated sheet 93, resulting in a reaction force acting in a direction opposite to the force initially applied to the tip 91. Figure 7A shows a top plan view of the first embodiment of the pull probe of this type illustrated in Figure 6. The flexible slender strip 103 is composed of a metal plate. It is shaped to include a horizontal extension at the end of the strip 103! 〇2 和 于 条 103 each includes contact summary 104. The conductive material of the strip 103 is selected to have high drop strength and medium elongation in the event of a failure. It is suitable to use a metal selected from the group consisting of corrugated-copper alloy, nickel, copper, copper, molybdenum, chain-titanium, stainless steel and alloys thereof. A suitable metal is beryllium-copper alloy ASTM Specification B534, with a drop strength of 550 million pascals. The other paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) — — — — — — — — — — — — 1111111 ^ i — — — — — — (Please read the Note: Please fill in this page again) 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 B7___ V. Description of the invention (13) A suitable metal is titanium alloy Ti, 8, Al, 1 Mo, IV, with a drop strength of 910 hundred Wambaska. The probe tip 101 shown in FIG. 7 is supported on an extension arm 102, so the probe tip 101 will press the substrate 10 in the vertical direction in response to the vertical force F. The effects of the arm 102 and the probe tip 101 are shown in the cross-sections of Figures 7B and 7C. The force F applied to the probe tip 101 has a torque on the strip 103, which twists the strip and allows the arm 102 to be pressed toward the substrate 109. As shown in section 7C 第, the vertical movement of the probe tip 101 is caused by the good deflection and twisting of the strip 103. The probe tip 101 is a pyramid formed by etching indentation formed on the (100) silicon surface by a well-known method. The tip angle of 54.75 degrees is determined by the (111) crystallographic plane of silicon. The tip material is tungsten, forming a sharp, hard tip that can pierce the aluminum oxide layer on aluminum contact pads typically used in semiconductor integrated circuit components. Suitable materials for sharp and hard tips are selected from the group consisting of molybdenum, nickel alloys, hungry, Paliney 7, rhodium, baht, titanium, tungsten and their alloys. The sharp tip of the hard probe is converted into electrical contact by the repeated etching pits on silicon. It is well-known and thoroughly described in the public document of D.A. Kiewit in 1973, "Synthesis of Scientific Instruments" Vol. 44, No. 1741 -Page 1742. Kiewit explained that the probe tip was fabricated by silicon-reproducing the pits by depositing a butterfly-butterfly alloy inside the pit and then removing the stone matrix material to expose the pyramid. Kiewit forms a pyramidal etch pit on the silicon (100) surface by treating the surface with a boiling hydrate. The strip 103 is a contact pad 104 joined to each end of the strip 103 by the pillar 105. The paper size is translated to Chinese National Standard (CNS) A4 specifications ⑽X 297 public love y 16 — IJ-IIJI — — — — · I- IIIII ^ · 1111111 (Please read the notes on the back before filling in this page)

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

而被支持於基材109上方。支柱1〇5係由電沉積材料製成, 較佳選自由硬質銅、鎳、銅-鎳合金及硬質金組成的組群 。測試積體電路用之探針梢端1 〇 1至電路之電連結係經由 傳導通過臂102、長條103、接觸1〇4、支柱1〇5、接觸襯墊 106、導體107及通孔108達成。由通孔1〇8至探針1〇1之電 路係配置成儘可能形成小迴路俾減少電感且允許以最高頻 率或最高資料速率操作。 第8A及8B圖說明較佳具體實施例之配置之操作的進 一步細節,其中探針梢端U1係由橫向延伸臂112支持於夾 持於二支柱115間的細長條材料113所支持。力F係於垂直 方向以偏轉δτ而壓迫梢端111。 第8Β圖顯示梢端111的總偏轉δτ為梁彎曲成份δ〇與扭 曲偏轉成份之和。第8Β圖顯示由力(單位為克)垂直作用於 探針梢端111引起的總偏轉δτ(單位為微米)。用於此項研究 ’長條113係由厚25微米,寬25微米及長200微米之紹製成 。臂112於長條平面測量由長條113中線至探針梢端長1〇〇 微米。 依從性探針之第一具體實施例之細節圖顯示於第9 A 圖之頂視平面圖。探針梢端121係支持於細長薄片123之「 V」字型延伸部122上。延伸部122支持梢端121位在連結 支持細長薄片123各端的支柱125中心間之虛擬連結線一邊 位置。延伸部122比細長薄片123主體更厚以防因外加力F 造成延伸部的扭曲。 探針梢端121響應外加於梢端121之垂直力F而朝向基 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) 17 — — — — — — — — — — — — — ·1111111 > — — — — — — — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 498162 A7 B7____ 五、發明說明(15 ) 材129於垂直方向偏向。延伸部122及探針梢端121之偏轉 顯示於第9B及9C圖之剖面圖。外加至探針梢端121之例F 於長條123顯示扭矩,因而扭轉長條123且允許延伸部122 壓迫朝向基材129。如第9C圖之剖面圖所示,探針梢端121 的垂直移動係由於細長薄片123的梁偏轉及扭轉彎曲所致 〇 薄片123藉接合著薄片123各端的接觸襯墊124的支柱 125而支持於基材129上。支柱125為剛性金屬支柱。探針 梢端121至測試電路的電連結係由臂122,薄片123,接觸 襯墊124,支柱125,接觸襯墊126,電路軌線127及通孔128 的傳導做出電連結。由通孔128至探針121之電路配置形成 儘可能小的迴路以降低電感因而允許高電性能操作。 第10及11圖顯示依從性探針之額外具趙實施例,此處 延伸臂及細長薄片之功能組合成為一個結構。第三具體例 顯示於第10圖,其中探針梢端131係設置於彆曲細長薄片 133上,使探針梢端131中線係位在連結薄片133各端的支 柱135中心間的虛擬線一段預定距離。細長薄片I”饗應垂 直探針梢端131外加的力而扭轉彎曲及彎折。扭轉的扭力 係來自於距支柱135中線一段距離外加的力產生的扭矩。 扭轉彎曲相對於梁彎折彎曲量係依據探針梢端131距中線 之偏位占長條133長度之分量決定。依據接受測試之裝置 尺寸以及薄片133之材料性質而定,偏位較佳為薄片id長 度之0·05至0.5倍。 第10圖之探針包括彎板133,其支持由支柱135中線偏 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 18 (請先閱讀背面之注意事項再填寫本頁) i ! ! !訂·!-線 1 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(l6 ) 位的探針梢端131。探針梢端131之電連結係經由長條133 連結至接觸終端134。終端134又接合至停靠於接觸襯墊136 上的支柱135,接觸襯墊係連結至電路軌線137,電路執線 藉通孔138而連結至基材139的測試電路。通孔138係位在 探針梢端近端俾使連結測試電路至探針梢端13 1的連結電 感減至最低。 結合接地平面遮蔽件的依從性探針的第四具體例顯示 > 於第11圖。第11圖之探針包括彎板丨43其支持探針梢端141 ’探針梢端所在位置係由支柱145之中線偏位。連結至探 針梢端141之電連結係通過彎板143至接觸襯墊144。接觸 襯墊144又接合至停靠於終端146上的支柱145,終端146係 連結至電路執線147,電路執線經由通孔148而連結至基材 149的測試電路。接地層140位在探針梢端141下方且以電 性遮蔽探針俾達成較高性能^ 具體實施例3之細節圖顯示於第12A-12C圖。第12A之 | 頂視平面圖顯示具體例3之代表性配置,此處梢端151係支 持於彈簧材料之「V」字形扁平薄片153中點。「V」字形 • 薄片153係由設置於薄片各端的中端154支持。本具體實施 例之薄片係由鈦合金Ti,A1 8,V 4製成,但其它高強度 或彈性材料也同樣有效。薄片153之厚度為10至75微米, 更佳厚度為20至50微米。各臂153之最窄段寬度為20至200 微米及更佳寬度為35至75微米。於薄片153第一端之支柱 155的矩心以及於薄片153第二端之支柱155的矩心間距長 約200至1500微米,及更佳中心至中線間隔為250至750微 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 19 I---I---I I I I I i — — — — — — ^* — — — — 1 — I (請先閱讀背面之注意事項再填寫本頁) A7 ----------B7 五、發明說明(Π ) 米。 (請先閱讀背面之注意事項再填寫本頁) 具體實施例3對外加於探針梢端151之力F響應舉例說 明於第12Β及12C圖,顯示於施力F之前及之後,依從性探 針之剖面圖。如第12C圖所示,探針梢端151上之力F偏轉 彎曲薄片153向下朝向基材159。彎曲薄片153係藉偏轉彎 曲及扭曲。薄片153的扭曲及彎曲偏轉造成反力其係與梢 端151受力F作用時進一步偏轉方向相反❶ 探針梢端151藉接合至薄片153接觸襯墊154的支柱155 支持的薄片153做電連結。支柱155停靠於基材159上的終 端156上,此處終端156連結至電路執線157。電路軌線157 係藉導電通孔158接合至基材159的電路。選擇性地,接地 平面可插入探針梢端151與基材159電路間俾屏蔽梢端151 不接觸基材159之電路執線附近的信號。 依從性探針之板簧設計之多種變化可配合特定電子元 件的測試需求。若干設計舉例說明於第13Α至13C圖。各 例中,探針梢端位置偏離由通過支持板簧於第一端及第二 端的支柱矩心間的虛擬線決定的轴線。 經濟部智慧財產局員工消費合作社印製 第13Α圖說明一種探針160之設計,此處探針梢端161 係由板簧163之「V」字形節段162頂點支持。節段162設 置於朝向於板簧163 —端且任板簧巢套俾達成探針梢端間 之間隔距離緊密。支柱165及167係以交錯圖樣設置俾允許 各探針之間隔緊密。相對地,板簧163兩相對端的接觸襯 墊164及166分別匹配於支柱165及167。 第13Β圖顯示探針170之設計,此處探針梢端171係支 20 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(18) 持板簧173之「V」字形節段172頂點。節段173設置於朝 向板簧173該端而允許彈簧巢套達成探針梢端間之間隔緊 密。支柱175及177係以交錯樣式設置而允許各探針之間隔 緊密。相對地,於板簧173的兩相對端的接觸襯塾174及176 係分別匹配支柱175及177。 第13C圖說明依從性探針180之設計,其中探針梢端 181係支持於彎曲板簧182頂點。弩曲板簧182係成形為允 > 許彈簧巢套而達成探針梢端間之間隔緊密。探針梢端181 係偏離設置於板簧182各端的終端184與支柱185之矩心形 成的中線。 示於第14A-14D圖之依從性探針之非對稱性配置提供 特定測試及老化測試用途需要的能力。非對稱配置有助於 探測於約束空間、角落以及襯墊間距小的接觸襯墊。進一 步,接地允許接地屏蔽件結合於探針結構。 第14A圖所示依從性探針190使用支柱195及額外支柱 | 197來支持扁平組件192之第一端。額外支柱197用於穩定 結構不受橫向作用力。額外支柱197也用於與結合與扁平 • 組件191的接地平面199做電接觸。支柱197係接合至接地 平面199之終端196。扁平組件192係由支柱195支持,支柱 係藉終端194接合至扁平組件192。 扁平組件192支持探針梢端191。探針梢端191係設置 於扁平組件192上位在偏離探針190之中轴198之位置。中 軸為連結支持組件192第一端之支柱195及197的矩形與支 持組件192第二端之支柱194的矩形間的虛擬直線。外加至 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 21 111 — 謙 — 111 — — — 肇 ® I I I I 雪 I 1 t — — — — — — — · (請先閱讀背面之注意事項再填寫本頁) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(19 ) 探針梢端191之力形成以中轴198為中心的扭矩,造成組件 192彎曲及扭轉。 第14B圖中,依從性探針200包括一板簧,具有一短 臂202由接觸襯墊206支持及一長臂203由接觸襯墊204支持 。板簧支持設置於臂202與203間的探針梢端201位在偏離 探針中線208之位置。中線208為連結支柱205矩心與支柱 207矩心之虛擬直線。加諸探針梢端2〇1之力形成以中線208 為中心的扭矩,造成臂202及203弩曲及扭曲。 第14C圖中,依從性探針210包括一板簧,有一短臂212 係由接觸襯墊216支持及一長臂213係由接觸襯墊214支持 。板簧支持探針梢端211,探針梢端係設置於臂212與213 間位在偏離探針210之中線218的距離。中線218為連結支 柱215矩心與支柱217矩心之假想線。加諸探針梢端211之 力形成環繞中線218扭矩,造成臂212及213彎曲且扭曲。 第14D圖之依從性探針220包括一板簧,有一短臂222 由接觸襯墊226支持以及具有一長臂223由接觸襯墊224支 持。板簧支持探針梢端221,該探針梢端係設置於臂222與 臂223間位在偏離探針220中線228之位置。中線228為連結 支柱225矩心與支柱227矩心之虛擬直線。外加至探針梢端 221之力形成以中線228為中心的扭矩,造成臂222及223彎 曲及扭轉,因而產生反力限制探針梢端221的進一步偏轉 〇 根據本發明之教示之依從性探針可用於含有積體電路 及其它微電子裝置的晶圓的老化測試。第15A圖所示,晶 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 22 ·· -------ΊΙ —--------— i— 訂!!線 (請先閱讀背面之注意事項再填寫本頁) 498162 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(20 ) 圓接觸器230結合根據具體例3之探針232於矽基材231表面 上。各探針232藉矽基材231的電路軌線234連結至接觸器 230之終端233。本例中,矽用做基材231材料,俾提供熱 膨脹係數而該係數係匹配接受老化測試的含積體電路的矽 晶圓之熱膨脹係數。 進行老化測試時,接觸器230排齊接受測試的晶圆, 然後使用機械夾緊裝置夾持而使接觸器的各探針以足夠確 > 保可靠接觸的力背向晶圓的匹配接觸襯墊偏向。為了接觸 標準鋁襯墊,需要5-10克力來確保接觸。然後總成加熱至 老化測試溫度,典型為125°C至150°C。電刺激外加至各積 體電路而操作該電路且完成動態老化測試。 第15B圖顯示設置於接觸器230表面之探針部份。探 針梢端排列成區域陣列,該區域陣列係匹配欲測試的倒裝 晶片上的接觸襯墊的區域陣列。各探針梢端241設置成匹 配倒裝晶片上的對應接觸襯墊。探針232之維度係與目前 | 用於倒裝晶片的格柵間距150微米至500微米相容。探針240 設置成巢套圖樣,該圖樣允許各探針嵌合可利用的空間。 . 增加額外無功能探針至陣列而於晶圓上接觸襯墊平均密度 較低的局部區域對接受測試的晶圓提供支持。 探針232的探針梢端241提供硬面用以貫穿接受測試晶 圓的鋁接線襯墊上的任何氧化物。探針梢端241係設置於 「V」字形彈簧242的頂點,彈簧係由支柱245支持,支柱 係連結至彈簧242各端的接觸襯墊244。 根據本發明之教示之依從性探針提供一種測試高速積 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 23 -------------裝! I 訂·! I —— I-線 <請先閱讀背面之注意事項再填寫本頁) 498162It is supported above the base material 109. The pillar 105 is made of an electrodeposited material, and is preferably selected from the group consisting of hard copper, nickel, copper-nickel alloy, and hard gold. The electrical connection between the probe tip 101 and the circuit for testing the integrated circuit is conducted through the arm 102, the strip 103, the contact 104, the pillar 105, the contact pad 106, the conductor 107, and the through hole 108. Reached. The circuit system from the through-hole 108 to the probe 101 is configured to form as small a loop as possible, reducing inductance and allowing operation at the highest frequency or highest data rate. Figures 8A and 8B illustrate further details of the operation of the configuration of the preferred embodiment, in which the probe tip U1 is supported by a laterally extending arm 112 supported by an elongated strip material 113 held between two pillars 115. The force F is applied in the vertical direction to deflect δτ and press the tip 111. Figure 8B shows that the total deflection δτ of the tip 111 is the sum of the beam bending component δ0 and the twisting deflection component. Figure 8B shows the total deflection δτ (in micrometers) caused by the force (in grams) applied vertically to the probe tip 111. The strip 113 used in this study was made of 25 micron thick, 25 micron wide and 200 micron long. The arm 112 measures 100 micrometers in length from the midline of the strip 113 to the tip of the probe. A detailed view of the first embodiment of the compliance probe is shown in a top plan view of FIG. 9A. The probe tip 121 is supported on the “V” -shaped extension 122 of the elongated sheet 123. The extension 122 supports the tip 121 at one side of the virtual link line between the centers of the pillars 125 that support the ends of the elongated sheet 123. The extension portion 122 is thicker than the elongated sheet 123 to prevent distortion of the extension portion due to the applied force F. The probe tip 121 responds to the vertical force F applied to the tip 121 toward the basic paper size and applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm). 17 — — — — — — — — — — — — · 1111111 > — — — — — — — (Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498162 A7 B7____ 5. Description of the invention (15) Material 129 is biased in the vertical direction . The deflections of the extension 122 and the probe tip 121 are shown in the cross-sectional views of FIGS. 9B and 9C. Example F, which is applied to the probe tip 121, shows torque on the strip 123, thus twisting the strip 123 and allowing the extension 122 to be pressed toward the substrate 129. As shown in the cross-sectional view of FIG. 9C, the vertical movement of the probe tip 121 is caused by the beam deflection and torsional bending of the elongated sheet 123. The sheet 123 is supported by the pillars 125 engaging the contact pads 124 at each end of the sheet 123 On the substrate 129. The pillar 125 is a rigid metal pillar. The electrical connection between the probe tip 121 and the test circuit is electrically connected by the conduction of the arm 122, the sheet 123, the contact pad 124, the post 125, the contact pad 126, the circuit track 127, and the through hole 128. The circuit configuration from the through-hole 128 to the probe 121 forms a loop as small as possible to reduce inductance and thus allows high electrical performance operation. Figures 10 and 11 show additional embodiments of the compliance probe, where the functions of the extension arm and the elongated sheet are combined into a structure. A third specific example is shown in FIG. 10, in which the probe tip 131 is disposed on the thin and elongated sheet 133, so that the center line of the probe tip 131 is located at a section of a virtual line between the centers of the pillars 135 connecting the ends of the sheet 133 Predetermined distance. The thin sheet I "I should be twisted and bent in response to the force applied by the vertical probe tip 131. The torsional torque is derived from the force applied from a distance from the centerline of the pillar 135. Torsional bending is relative to beam bending The amount is determined based on the deviation of the probe tip 131 from the centerline and the length of the strip 133. According to the size of the device under test and the material properties of the sheet 133, the offset is preferably 0 · 05 of the length of the sheet id The probe in Figure 10 includes a curved plate 133, which supports the center line of the pillar 135. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 18 (Please read the note on the back first) Please fill in this page for more information.) I!! Order ·!-Line 1 498162 Printed by A7 B7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the invention (16) Probe tip 131. Probe tip 131 The electrical connection is connected to the contact terminal 134 via a strip 133. The terminal 134 is in turn connected to the post 135 resting on the contact pad 136, which is connected to the circuit track 137, and the circuit execution wire is connected to the via hole 138 Test circuit for substrate 139. Through hole 138 Located near the probe tip, the connection inductance between the test circuit and the probe tip 13 1 is minimized. A fourth specific example of a compliance probe incorporating a ground plane shield is shown in FIG. 11. The probe of FIG. 11 includes a bent plate. The position of the probe tip 141 is supported by the center line of the pillar 145. The electrical connection to the probe tip 141 is through the bent plate 143. To the contact pad 144. The contact pad 144 is in turn joined to the post 145 resting on the terminal 146, which is connected to the circuit execution wire 147, which is connected to the test circuit of the substrate 149 through the through hole 148. The stratum 140 is located under the probe tip 141 and the probe is electrically shielded to achieve higher performance. ^ The detailed diagram of the specific embodiment 3 is shown in Figs. 12A-12C. The top plan view shows the specific example 3 In a typical configuration, the tip 151 here is supported at the midpoint of the “V” flat flat sheet 153 of the spring material. "V" shape • The sheet 153 is supported by a middle end 154 provided at each end of the sheet. The flakes of this embodiment are made of titanium alloys Ti, A1 8, V4, but other high-strength or elastic materials are also effective. The thickness of the sheet 153 is 10 to 75 micrometers, and more preferably 20 to 50 micrometers. The narrowest section of each arm 153 has a width of 20 to 200 microns and more preferably a width of 35 to 75 microns. The centroids of the pillars 155 at the first end of the sheet 153 and the centroids of the pillars 155 at the second end of the sheet 153 are about 200 to 1500 microns long, and a better center-to-center line interval is 250 to 750 micrometers. China National Standard (CNS) A4 Specification (210 X 297 mm) 19 I --- I --- IIIII i — — — — — — ^ * — — — 1 — I (Please read the precautions on the back before (Fill in this page) A7 ---------- B7 V. Description of invention (Π) m. (Please read the precautions on the back before filling this page) Example 3 The response of the force F applied to the tip 151 of the probe is illustrated in Figures 12B and 12C. It is shown before and after the force F is applied. Sectional view of the needle. As shown in FIG. 12C, the force F on the probe tip 151 deflects the curved sheet 153 toward the base material 159 downward. The bending sheet 153 is bent and twisted by deflection. The twisting and bending deflection of the sheet 153 causes a reaction force, which is opposite to the further deflection direction when the tip 151 is subjected to the force F. The probe tip 151 is electrically connected by the sheet 153 supported by the sheet 153 contacting the sheet 153 and the contact pad 154. . The pillar 155 rests on the terminal 156 on the base material 159, where the terminal 156 is connected to the circuit execution wire 157. The circuit track 157 is a circuit bonded to the substrate 159 through the conductive via 158. Alternatively, the ground plane can be inserted between the probe tip 151 and the circuit of the substrate 159, and the shield tip 151 does not contact signals near the circuit execution line of the substrate 159. There are many variations of the design of the compliance probe's leaf springs to meet the testing needs of specific electronic components. Several designs are illustrated in Figures 13A to 13C. In each example, the position of the tip of the probe is offset from the axis determined by the virtual line between the centroids of the struts that support the plate spring at the first and second ends. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 13A illustrates the design of a probe 160, where the probe tip 161 is supported by the apex of a "V" shaped segment 162 of a leaf spring 163. The segment 162 is set to face the end of the leaf spring 163 and let the leaf spring nest 俾 achieve a close distance between the probe tips. The pillars 165 and 167 are arranged in a staggered pattern, allowing the probes to be closely spaced. In contrast, the contact pads 164 and 166 at opposite ends of the leaf spring 163 are matched with the pillars 165 and 167, respectively. Figure 13B shows the design of the probe 170. Here, the probe tip 171 is 20 pieces. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). 498162 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (18) The vertex of the "V" shaped segment 172 holding the leaf spring 173. The segment 173 is disposed toward the end of the leaf spring 173 to allow the spring nest to achieve a close interval between the ends of the probe tips. The pillars 175 and 177 are arranged in a staggered pattern to allow the probes to be closely spaced. In contrast, the contact bushes 174 and 176 at the two opposite ends of the leaf spring 173 match the pillars 175 and 177, respectively. Fig. 13C illustrates the design of the compliance probe 180, in which the probe tip 181 is supported at the vertex of the curved leaf spring 182. The crossbow leaf spring 182 is shaped to allow > a nest of springs to achieve close spacing between the probe tips. The probe tip 181 is offset from a center line formed by the center of the center of the terminal 184 provided at each end of the leaf spring 182 and the post 185. The asymmetric configuration of the compliance probes shown in Figures 14A-14D provides the capabilities required for specific testing and burn-in applications. The asymmetric configuration helps detect constrained spaces, corners, and contact pads with small pad spacing. Further, grounding allows the ground shield to be bonded to the probe structure. The compliance probe 190 shown in FIG. 14A uses a post 195 and an additional post | 197 to support the first end of the flat assembly 192. An additional strut 197 is used to stabilize the structure from lateral forces. The additional post 197 is also used to make electrical contact with the ground plane 199 of the combined and flat assembly 191. Post 197 is terminated to terminal 196 of ground plane 199. The flat assembly 192 is supported by a post 195 that is joined to the flat assembly 192 by a terminal 194. The flat assembly 192 supports the probe tip 191. The probe tip 191 is disposed on the flat assembly 192 at a position offset from the shaft 198 of the probe 190. The center axis is a virtual straight line connecting the rectangles of the pillars 195 and 197 at the first end of the supporting member 192 and the rectangles of the pillars 194 at the second end of the supporting member 192. Applicable to Chinese paper standard (CNS) A4 specification (210 X 297 mm) added to this paper size 21 111 — Qian — 111 — — — Zhao® IIII Snow I 1 t — — — — — — — (Please read the back first Note: Please fill in this page again) 498162 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (19) The force of the probe tip 191 forms a torque centered on the center axis 198, causing the component 192 to bend and To reverse. In FIG. 14B, the compliance probe 200 includes a leaf spring having a short arm 202 supported by the contact pad 206 and a long arm 203 supported by the contact pad 204. The leaf spring supports a probe tip 201 provided between the arms 202 and 203 at a position offset from the probe center line 208. The center line 208 is a virtual straight line connecting the centroid of the pillar 205 and the centroid of the pillar 207. Applying a force of 201 to the tip of the probe creates a torque centered on the centerline 208, causing the arms 202 and 203 to bend and twist. In FIG. 14C, the compliance probe 210 includes a leaf spring, a short arm 212 supported by the contact pad 216, and a long arm 213 supported by the contact pad 214. The leaf spring supports the probe tip 211, and the probe tip is disposed between the arms 212 and 213 at a distance from the center line 218 of the probe 210. The center line 218 is an imaginary line connecting the centroid of the support post 215 and the centroid of the support post 217. The force applied to the probe tip 211 creates a torque around the centerline 218, causing the arms 212 and 213 to bend and twist. The compliance probe 220 of FIG. 14D includes a leaf spring, a short arm 222 supported by the contact pad 226, and a long arm 223 supported by the contact pad 224. The leaf spring supports a probe tip 221, which is disposed between the arm 222 and the arm 223 at a position offset from the center line 228 of the probe 220. The center line 228 is a virtual straight line connecting the centroid of the pillar 225 and the centroid of the pillar 227. The force applied to the probe tip 221 forms a torque centered on the center line 228, causing the arms 222 and 223 to bend and twist, thereby generating a reaction force that limits the further deflection of the probe tip 221. Compliance in accordance with the teachings of the present invention Probes can be used for aging tests on wafers containing integrated circuits and other microelectronic devices. As shown in Figure 15A, the size of the crystal paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 22 ·· ------- ΊΙ —--------— i— Order !! !! (Please read the precautions on the back before filling this page) 498162 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (20) The circular contactor 230 combines the probe 232 according to the specific example 3 on the silicon base 231 on the surface. Each probe 232 is connected to a terminal 233 of the contactor 230 through a circuit track 234 of the silicon substrate 231. In this example, silicon is used as the base material 231, and the coefficient of thermal expansion is provided, and this coefficient matches the thermal expansion coefficient of the silicon wafer containing the integrated circuit subjected to the aging test. During the burn-in test, the contactor 230 aligns the wafers to be tested, and then uses a mechanical clamping device to hold the probes of the contactor back against the matching contact pads of the wafer with a sufficient and reliable contact force. The pad is biased. In order to contact a standard aluminum gasket, 5-10 grams of force are required to ensure contact. The assembly is then heated to an aging test temperature, typically 125 ° C to 150 ° C. Electrical stimulation was applied to each integrated circuit to operate the circuit and complete the dynamic aging test. FIG. 15B shows a probe portion provided on the surface of the contactor 230. The probe tips are arranged in an area array that matches the array of areas on the contact pads on the flip-chip wafer to be tested. Each probe tip 241 is provided to match a corresponding contact pad on a flip chip. The dimensions of the probe 232 are compatible with the current grid spacing of 150 microns to 500 microns for flip chip. The probes 240 are arranged in a nest pattern, which allows each probe to fit the available space. Adding additional non-functional probes to the array and local areas with a lower average density of contact pads on the wafer support the wafer under test. The probe tip 241 of the probe 232 provides a hard surface for penetrating any oxide on the aluminum wafer under test wafer. The probe tip 241 is provided at the apex of a "V" shaped spring 242. The spring is supported by the posts 245, and the posts are connected to the contact pads 244 at each end of the spring 242. The compliance probe according to the teachings of the present invention provides a test for high-speed printing. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). 23 ------------- Install! I order! I —— I-line < Please read the notes on the back before filling this page) 498162

經濟部智慧財產局員工消費合作社印製 體電路的手段,原因在於各探針的自行及交互電感低之故 。結合依從性探針的探針卡249顯示於第16A圖,探針240 没置於基材248上的區域陣列圖樣,適用於以區域陣列接 觸襯墊測試的倒裝晶片。各探針24〇藉結合於基材248的電 路軌線裝置246電連結至探針卡249終端247 ^基材248較佳 包含形穩性基底例如礬土陶瓷材料,於基底上銅電路軌線 係設置於各層聚酿亞胺介電材料間。 第16B圖顯示根據具體例1之教示配置的依從性探針 240陣列。探針梢端241係設置於附著於細長板簧242中點 的臂243末端。支持柱245接合至細長板簧242各端之接觸 襯墊244。 第17 A圖所示晶片容座提供一種用於測試、老化測試 及操作倒裝晶片的可卸式裝置。倒裝晶片261係由定位裝 置262夾持,故倒裝晶片261上的各接觸墊匹配容座基材丨58 表面上的對應探針250。各探針250係藉電路軌線裝置256 電連結容座基材258上的終端257。適合操作的倒裝晶片261 電信號藉互連裝置263由電之電路裝置264導向容座。纜線 265連結電子電路264至倒裝晶片261的老化測試、測試或 才呆作系統。 第17Β圖顯示於第HA圖之容座之依從性探針240陣列 之一部份。探針梢端251設置於臂253末端,臂253係附著 於細長板簧252中點。支柱254接合至位在細長板簧252 — 端的接觸襯墊255。 第18A-18D圖顯示的探針梢端配置成用於測試及老化 本紙張尺度適用中國國家標準(CNS)A4規格⑽X 297公釐) 24 I J 0, --------^----— — 1!^. (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部智慧財產局員工消費合作社印製The method of printing the body circuit by the employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economics is due to the low self- and interactive inductance of each probe. The probe card 249 incorporating the compliance probe is shown in FIG. 16A. The area array pattern of the probe 240 not placed on the substrate 248 is suitable for flip chip testing with the area array contact pad. Each probe 24 is electrically connected to the probe card 249 terminal 247 by a circuit track device 246 coupled to a substrate 248. The substrate 248 preferably includes a shape-stable substrate such as alumina ceramic material, and copper circuit traces on the substrate. It is placed between the layers of polyimide dielectric material. FIG. 16B shows a compliance probe 240 array configured in accordance with the teachings of Specific Example 1. FIG. The probe tip 241 is provided at the end of an arm 243 attached to the midpoint of the elongated leaf spring 242. The support posts 245 are joined to the contact pads 244 at each end of the elongated leaf spring 242. The wafer holder shown in Figure 17A provides a removable device for testing, burn-in testing, and handling of flip-chip wafers. The flip-chip 261 is held by the positioning device 262, so each contact pad on the flip-chip 261 matches the corresponding probe 250 on the surface of the base substrate 58. Each of the probes 250 is electrically connected to a terminal 257 on the receptacle base 258 by a circuit track device 256. The flip-chip 261 suitable for operation is electrically guided by the electrical circuit device 264 to the receptacle via the interconnection device 263. The cable 265 connects the electronic circuit 264 to the flip chip 261 for aging test, test or inactive system. Figure 17B shows a portion of the compliance probe 240 array in the receptacle of Figure HA. The probe tip 251 is provided at the end of the arm 253, and the arm 253 is attached to the midpoint of the elongated leaf spring 252. The post 254 engages a contact pad 255 at the end of the elongated leaf spring 252. The probe tips shown in Figures 18A-18D are configured for testing and aging. This paper is sized for China National Standard (CNS) A4 (X 297 mm) 24 IJ 0, -------- ^- --- — 1! ^. (Please read the notes on the back before filling out this page) A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明(22) 測試的特定用途。此等探針梢端及其它為積體電路業眾所 周知,此處舉出的實例係代表多種可利用的探針梢端類型 。製法為電接觸製造業界技藝精湛人士眾所周知。 第18 A圖所示探針梢端較佳用於探測積體電路上的鋁 接線襯墊,此處尖銳頂點273適合刺穿鋁接線襯墊上的氧 化物層。角錐272經由於(100)矽表面再現蝕刻凹坑的形成 。角錐272支持於板簧271上。角錐272頂點273以兩相對面 間包含角為54.75度界定成為銳角。硬質材料用於探針梢 端272,此處材料較佳選自链、錄、餓、帕里尼7、姥、銖 、鈦、鶴及其合金組成的組群。探測軟接觸時,以餓、姥 及鎢等材料為較佳,原因在於其於焊料及其它軟性材料的 反應較慢。 第18B圖顯示的探針梢端適用於接觸貴金屬接觸襯墊 。薄圓盤277支持於設置於板簧275上的金屬支柱276上。 支柱276藉化學蝕刻凹割暴露出圓盤277邊緣。薄圓盤277 係由惰性金屬製成,惰性金屬較佳選自金、帕里尼7、鉑 、姥及其合金組成的組群。 第18C圖所示探針梢端適合接觸焊料及其它軟性材料 。圓化的金屬梢端281支持於金屬支柱282上,支柱設置於 板簧280上。圓化金屬梢端281可藉急速雷射熔化高溫材料 再流動成為球形截面形狀而成形。施用於圓化金屬梢端281 的材料包括鎳,鉑,铑,銅-鎳合金,鈹_銅合金及帕里尼 7 〇 第18D圖所示探針梢端適合接觸小接觸襯墊及間隔緊 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 25 11!· I — — — — — —til — ! ! A (請先Μ讀背面之注意事項再填寫本頁) 五、 經濟部智慧財產局員工消費合作社印製 發明說明(23) 密的襯墊。附有頂緣286的探針梢端287係設置於板簧285 頂面上。探針梢端287較佳係藉鍍敷保護性材料邊緣然後 去除該材料留下金屬287邊緣形成。 雖然已經說明若干本發明之較佳具體實施例,但業界 人士可未悖離本發明之精髓及範圍對其做出無數修改及變 元件標號對照 23…晶片 24…接觸 25···依從性構件 26···梢端 28···懸臂 32·.·介電膜 33··.終端 34…撓性線 35···接觸襯墊 40.··二氧化矽膜 41…探針梢端 42…電路 43···介電膜 44···通孔 45···電路執線 51…探針 52…半導艘晶圓 53···材料 54···臂 60…探針 61-2···導件 63···探針梢端 65···推拔 66…支柱 6 7…探針梢端 68···終端 69···基材 71…彈餐鋼絲 72…探針梢端 73…接線 本紙張尺度適用中國國家標準(CNS)A4規格(21G x 297公爱) LI J.---:--------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 26 498162 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(24 ) 74.. .基材 82.. .導電材料 8 4...終端 86.. .襯墊 - 88...通孔 91.. .探針梢端 93…薄片 ,95…支柱 97.. .電路軌線 99.. .基材 101…探針梢端 103.. .長條 105.. .支柱 107.. .導體 109.. .基材 • 112…臂 115.. .支柱 麵 122···延伸部 124…接觸襯墊 126…接觸襯墊 128…通孔 131…探針梢端 134.. .終端 137.. .電路執線 81…探針梢端 8 3…長條 85…支柱 8 7…電路軌線 89.. .基材 92··.彎曲部 94…襯塾 96…襯塾 98…通孔 100···線 102…臂 104.. .接觸襯墊 106.. .接觸襯墊 108…通孑L 111.. .探針梢端 113··.長條 121.. .探針梢端 123···薄片 125.. .支柱 12 7…電路軌線 129…基材 133…薄片 135··.支柱 138··.通孔 1IIIIIIII1II1 · 1 I I I I I I ·1111111· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 27 498162 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(25 ) 139.. .基材 141…探針梢端 144…接觸襯墊 147…電路執線 149.. .基材 153.. .薄片 155.. .支柱 15 7…電路軌線 159.. .基材 161…探針梢端 163.. .板簧 165.. .支柱 167.. .支柱 171…探針梢端 173…板簧 175.. .支柱 177.. .支柱 181…探針梢端 184.. .終端 190…依從性探針 192…扁平構件 196.. .終端 198.. .中軸 200.. .依從性探針 140.. .接地層 143···彎曲片145.. .支柱148.. .通孔 151···梢端 154.. .接觸襯墊156.. .終端 158··.通孔 160.. .探針 162··.彎曲節段 164.. .接觸襯墊 166.. .接觸襯墊170.. .探針 172…彆曲節段 174.. .接觸襯墊 176.. .接觸襯墊 180…依從性探針 182…彎曲板簧 185…支柱 191.. .探針梢端 194-5…支柱197.. .支柱 199…接地平面 201.. .探針梢端 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 28 498162 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(26) 202··.短臂 204…接觸襯墊 206…接觸襯墊 208.. .中線 211…探針梢端 213.. .長臂 215.. .支柱 > 217...支柱 220…依從性探針 222···短臂 224…接觸襯墊 226…接觸襯墊 228.. .中線 231.. .矽基材 233.. .終端 & 240...探針 242.. .彈簧 _ 244…接觸襯墊 246.. .電路軌線裝置 248.. .基材 250.. .探針 252…板簧 254.. .支柱 256.. .電路執線裝置 203…長臂 205.. .支柱 207.. .支柱 210.. .依從性探針 212…短臂 214.. .接觸襯墊 216.. .接觸襯墊 218.. .中線 221.. .探針梢端 223.. .長臂 225.. .支柱 227.. .支柱 230.. .接觸器 232…探針 234.··電路軌線 241.. .探針梢端 243…臂 245.. .支柱 247.. .終端 249.. .探針卡 251.. .探針梢端 253…臂 255.. .接觸襯墊 257…終端 ------— — — — — I-裝·!1 訂-!I-線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 29 498162 A7 B7 五、發明說明(27 ) 經濟部智慧財產局員工消費合作社印製 258...容座基材 261…倒裝晶片 262…定位裝置 263…互連裝置 264…電路裝置 265...纜線 271...板簧 272…梢端 273...頂點 275···板簧 276...支柱 277...園盤 280…板酱 281...梢端 282...支柱 285…板簧 286...頂級 287…探針梢端 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS>A4規格(210 X 297公釐) 30V. Description of the invention (22) Specific use of the test. These probe tips and others are well known in the integrated circuit industry, and the examples given here represent a variety of probe tip types available. The manufacturing method is well known to skilled persons in the electrical contact manufacturing industry. The probe tip shown in Figure 18A is preferably used to detect the aluminum wiring pad on the integrated circuit. Here, the sharp apex 273 is suitable for piercing the oxide layer on the aluminum wiring pad. The pyramid 272 reproduces the formation of etch pits on the (100) silicon surface. The pyramid 272 is supported on the leaf spring 271. The vertex 273 of the pyramid 272 is defined as an acute angle with an included angle between the two opposite faces of 54.75 degrees. A hard material is used for the probe tip 272. Here, the material is preferably selected from the group consisting of chain, tape, hungry, parini 7, hafnium, baht, titanium, crane and alloys thereof. When detecting soft contact, materials such as hunger, thorium, and tungsten are preferred because they react slowly to solder and other soft materials. The probe tip shown in Figure 18B is suitable for contacting precious metal contact pads. The thin disc 277 is supported on a metal post 276 provided on the leaf spring 275. The pillar 276 exposes the edge of the disc 277 by chemical etching. The thin disc 277 is made of an inert metal. The inert metal is preferably selected from the group consisting of gold, Parini 7, platinum, rhenium, and alloys thereof. The probe tip shown in Figure 18C is suitable for contact with solder and other soft materials. The rounded metal tip 281 is supported on a metal post 282, and the post is provided on a leaf spring 280. The rounded metal tip 281 can be formed by melting a high-temperature material with a rapid laser and then flowing into a spherical cross-sectional shape. Materials used for rounded metal tips 281 include nickel, platinum, rhodium, copper-nickel alloys, beryllium copper alloys, and Parini 70. Probe tips shown in Figure 18D are suitable for contacting small contact pads and tightly spaced This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) 25 11! · I — — — — — — til —!! A (Please read the precautions on the back before filling this page) 5 The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a description of the invention (23). A probe tip 287 with a top edge 286 is disposed on the top surface of the leaf spring 285. The probe tip 287 is preferably formed by plating the edge of a protective material and then removing the material to leave a metal 287 edge. Although a number of preferred embodiments of the present invention have been described, those skilled in the art can make countless modifications to it and change the component numbers without departing from the spirit and scope of the present invention. 23 ... Wafer 24 ... Contact 25 ... Compliance member 26 ... Tip 28 ... Cantilever 32 ... Dielectric film 33 ... Terminal 34 ... Flexible wire 35 ... Contact pad 40 ... Silicon dioxide film 41 ... Probe tip 42 … Circuit 43 ·· Dielectric film 44 ·· Through hole 45 ·· Circuit wire 51… Probe 52… Semiconductor wafer 53 ·· Material 54 ·· Arm 60… Probe 61-2 ··· Guide 63 ··· Probe tip 65 ··· Pushing 66 ... Pillar 6 7 ... Probe tip 68 ··· Terminal 69 ··· Base material 71 ... Spring wire 72 ... Probe tip End 73 ... Wiring This paper size is applicable to China National Standard (CNS) A4 specification (21G x 297 public love) LI J .---: -------------- Order ----- ---- Line (Please read the precautions on the back before filling this page) 26 498162 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (24) 74 .. Substrate 82 .. Conductive Material 8 4 ... terminal 86 ..... pad-88 ... through hole 91 .. .Probe tip 93 ... sheet, 95 ... pillar 97 ... circuit track 99..substrate 101 ... probe tip 103..long 105..pillar 107..conductor 109 .. Base material 112 ... Arm 115 ... Pillar surface 122 ... Extension 124 ... Contact pad 126 ... Contact pad 128 ... Through hole 131 ... Probe tip 134 ... Terminal 137 ... Circuit holder Line 81 ... probe tip 8 3 ... long strip 85 ... pillar 8 7 ... circuit track 89 ... substrate 92 ... bend portion 94 ... lining 96 ... lining 98 ... through hole 100 ... 102 ... arm 104 ... contact pad 106 ... contact pad 108 ... L 111 ... probe tip 113 ... long strip 121 ... probe tip 123 ... sheet 125 ... Pillar 12 7… Circuit track 129… Substrate 133… Sheet 135 ··. Pillar 138 ··. Through hole 1IIIIIIII1II1 · 1 IIIIII · 1111111 · (Please read the precautions on the back before filling this page) This paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 27 498162 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (25) 139.... 144 ... contact pads 147 ... circuit implementation 149 ... substrate 153 ... sheet 155 ... pillar 15 7 ... circuit track 159 ... substrate 161 ... probe tip 163 ... leaf spring 165 ... pillar 167 ... pillar 171 ... probe tip 173 ... leaf spring 175 .... pillar 177 .... pillar 181 ... probe tip 184 ... terminal 190 ... compliance probe 192 ... flat member 196 ... terminal 198 ... Bottom axis 200 .. Compliance probe 140 .. Ground layer 143 .. Bent piece 145 .. Pillar 148 .. Through hole 151 .. Tip end 154 .. Contact pad 156 .. Terminal 158..through hole 160..probe 162..bent segment 164..contact pad 166 ... contact pad 170 ... probe 172 ... beginning of segment 174..contact Gasket 176 .. Contact gasket 180 ... Compliance probe 182 ... Curved leaf spring 185 ... Pillar 191 ... Probe tip 194-5 ... Pillar 197 ... Pillar 199 ... Ground plane 201 ... Probe Needle tip end (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 28 498162 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Description of the invention (26) 202 ... The short arm 204 ... the contact pad 206 ... Touch pad 208 ... Center line 211 ... Probe tip 213 ... Long arm 215 ... Pillar> 217 ... Pillar 220 ... Compliance probe 222 ... Short arm 224 ... contact pad 226… contact pads 228 .. center line 231 ... silicon substrate 233 .. terminal & 240 ... probe 242 ... spring 244. contact pads 246 .. circuit track assembly 248 .. Base material 250 .. Probe 252 ... Leaf spring 254 .. Pillar 256 .. Circuit holding device 203 ... Long arm 205 .. Pillar 207 .. Pillar 210 .. Compliance probe Needle 212 ... Short arm 214 ... Contact pad 216 ... Contact pad 218 ... Center line 221 ... Probe tip 223 ... Long arm 225 ... Post 227 ... Post 230 .. Contactor 232 ... Probe 234 ... Circuit Track 241 ... Probe Tip 243 ... Arm 245 ... Pillar 247 ... Terminal 249 ... Probe Card 251 ... Probe Tip 253 ... Arm 255 ... Contact pad 257 ... Terminal -----------I-fit ...! 1 order-! I-line (please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 29 498162 A7 B7 V. Description of the invention (27) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 258 ... Receptor base 261 ... Flip chip 262 ... Positioning device 263 ... Interconnecting device 264 ... Circuit device 265 ... Cable 271 ... Leaf spring 272 ... Tip 273 ... Vertex 275 ... Leaf spring 276 ... Pillar 277 ... Plate 280 ... Plate sauce 281 ... Tip 282 ... Pillar 285 ... Plate spring 286 ... Top grade 287 ... Probe tip (please read the precautions on the back before filling this page) This paper size applies to Chinese national standard (CNS > A4 specification (210 X 297 mm) 30

Claims (1)

498162 經濟部智慧財產局員工消費合作社印製 A8 Βδ C8 D8六、申請專利範圍 1· 一種與微電子裝置的接觸襯墊做電連結用之探針,該 探針包含: (a) —導電材料薄片附有一頂面及一底面; (b) —基材附有一頂面及一底面; (e)電氣終端設置於該基材頂面上; (d) 導電支柱,其各自於一端連結至薄片底面而於 另一端連結至基材頂面上的電氣終端之一,因此薄片 係支持於高於基材頂面的某個距離; (e) —導電梢端附有一底座係設置於薄片頂面上, 以及附有一頂面高於薄片頂面,如此導電梢端頂面適 合電連結至接觸襯墊; (f) 其中該導電梢端係設置於薄片上距離通過各支 柱的虛擬線一定距離,如此梢端係藉由扭轉彎曲薄片 而於垂直方向移動。 2·如申請專利範圍第1項之探針,其中該薄片為實質上平 坦的金屬箔具有最長維度為i 5〇至1500微米及厚度為1 〇 至75微米。 3·如申請專利範圍第1項之探針,其中該薄片為金屬薄膜 ,其厚度於探針梢端正下方該區為最大。 4·如申請專利範圍第1項之探針,其中該導電材料為一種 選自由紹、鎮、妮、錄、鈦、皱-銅、不鑛鋼及其合金 組成的組群之金屬。 5.如申請專利範圍第1項之探針,其中導電梢端頂面係由 一種選自由鎢、汰合金、铑、銖、娥、帕里尼(Palinet)7 (請先閲讀背面之注意事項再填寫498162 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 Βδ C8 D8 VI. Patent application scope 1. A probe for electrical connection with the contact pad of a microelectronic device, the probe contains: (a) — conductive material The sheet is attached with a top surface and a bottom surface; (b) — the substrate is attached with a top surface and a bottom surface; (e) an electrical terminal is provided on the top surface of the substrate; (d) conductive pillars are each connected to the sheet at one end The bottom surface is connected to one of the electrical terminals on the top surface of the substrate at the other end, so the sheet is supported at a distance higher than the top surface of the substrate; (e) — a base is attached to the conductive tip end and is set on the top surface of the sheet And the top surface is higher than the top surface of the sheet, so that the top surface of the conductive tip is suitable for electrical connection to the contact pad; (f) wherein the conductive tip is disposed on the sheet at a certain distance from the virtual line passing through the pillars, The tip end is moved in the vertical direction by twisting and bending the sheet. 2. The probe of claim 1 in which the sheet is a substantially flat metal foil having a longest dimension of i 50 to 1500 microns and a thickness of 10 to 75 microns. 3. The probe according to item 1 of the scope of patent application, wherein the sheet is a metal thin film, and its thickness is the largest under the probe tip. 4. The probe according to item 1 of the scope of patent application, wherein the conductive material is a metal selected from the group consisting of Shao, Zhen, Ni, Lu, Titanium, Wrinkled-Copper, stainless steel and alloys thereof. 5. The probe according to item 1 of the scope of patent application, wherein the top surface of the conductive tip end is selected from a group consisting of tungsten, titanium alloy, rhodium, baht, e, and Palinet 7 (please read the precautions on the back first) Fill in again 訂 線 本紙張尺度咖巾® ϋ家標準 (CNS ) Α4規格(210X297公釐) 31 申請專利範圍 鎳 成 A8 B8 C8 D8 鉻及此等材料之合金組成的組群之硬質金屬製 經_ 濟 部 % 慧 財 產 局 員 X 消 費 合 作 社 印 製 如申”月專利範圍第1項之探針,進一步包括電路圖樣位 在導電梢端下方且電連結至薄長條。 7·如申請專利範圍第丨項之探針,其中該梢端 包含再現一 角錐形凹坑姓刻於單晶發表面。 8·如申請專利範圍第!項之探針,其中該梢端包含薄金屬 凸部鍍敷於比薄片更高的實質上垂直緣。 9·如申請專利範圍第1項之探針,其中該梢端包含金屬球 形截面。 10·如申請專利範圍第β之探針,其中該梢端包含硬質金 屬薄膜由支柱支持,支柱已經經過蝕刻因而使硬質金 屬薄膜凹割而暴露出硬質金屬薄膜底面。 u·如申請專利範圍第1之探針,其中該支柱為電錢金屬 支柱。 U·如申請專利範圍第丨項之探針,進一步包括一種彈性介 電材料設置於導電材料薄片與基材頂面間。 13. 如申请專利範圍第12項之探針,《中該彈性介電材料 係選自由聚石夕氧、氟聚石夕氧、氟化碳及胺基甲酸酯彈 性體組成的組群。 14. 一種用於對微電子裝置上的接觸襯墊做電連結的探針 ,該探針包含: (a)—薄而細長的導電材料長條附有一頂面及 面; (請先閲讀背面之注意事項再填寫本頁) 裝 訂 線 底 32 A8 B8 C8 ________ D8 六、申請專利範圍 (b) 支持長條之一第一端及一第二端; (c) 一導電梢端附有一基極係設置於長條頂面上, 其中該梢端係凸起超出細長條頂面; (d) 其中該導電梢端係設置於距該導電長條之第一 端以及距該導電長條之第二端一定距離,也設置於距 連結於第一端的支持件中心至於第二端的支持件中心 的虛擬線一定距離; (e) 如此該導電梢端係藉弩曲細長條而於垂直方向 移動。 15·如申請專利範圍第14項之探針,其中該長條之弩曲包 括以連結第一端支持件中心至第二端支持件中心的虛 擬線為中心扭轉彎曲長條。 16·如申請專利範圍第14項之探針,其中該薄長條包括一 導電薄片、一金屬薄膜及一介定材料薄膜設置於其間 ,此處該金屬薄膜係連結至地電路。 17·如申請專利範圍第14項之探針,其中該薄長條包含一 平坦金屬片,該金屬片被圓樣化因此圖樣係於平行長 條方向彎曲。 經濟部智慧財產局員工消費合作社印製 18. 如申請專利範圍第14項之探針,其中該第一支持件包 含一第一金屬支柱及第二支持件包含一第二金屬支柱 〇 19. 一種操作微電子裝置之容座,各裝置具有實質平坦面 且有一接觸襯墊陣列設置於其上,該容座包含: (a) —基材具有一頂面及一底面; 本紙張尺度適用中國國家摞準(CNS ) A4規格(210X297公釐) 33 498162 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 (b)複數撓性探針用以與接觸襯墊做電連結,其中 該荨探針係設置成一陣列於基材頂面上; U)電路裝置連結至撓性探針,藉此當當撓性探針 連結至接觸襯墊時微電子裝置可被作動; (d)其中各該撓性探針包含一細長導電材料長條附 有一第一端及一第二端,此處該長條係由至少一支柱 支持於第一端及至少一支柱支持於第二端;以及 0)其中探針梢端係設置於距第一端及距第二端某 個距離因此探針梢端係設置於距連結第一端支柱矩心 至第二端支柱矩心的虛擬線預定距離。 20.如申請專利範圍第19項之容座,其中該接觸襯墊陣列 為接觸襯墊之規則區域陣列。 21·如申請專利範圍第19項之容座,其中該接觸襯墊陣列 為接觸襯墊之線性列。 22·如申請專利範圍第19項之容座,其中該基材係由矽材 料製成。 23.如申請專利範圍第2〇項之容座,其中該微電子裝置為 複數積體電路排列於一未經切晶粒的矽晶圓上。 24·如申請專利範圍第2〇項之容座,其中該矽材料為厚度 200微米至1〇〇〇微米之矽晶圓。 25. 如申請專利範圍第19項之容座,其中該基材係由陶瓷 材料製成。 26. 如申請專利範圍第25項之容座,其中該基材為一種金 屬-陶瓷多層結構,藉此各探針係連結至微電子裝置用 本紙張尺度適用中國國家標率(CNS ) A4規格(21 Ox297公釐) I裝—— I I訂 II線 (請先閲讀背面之注意事項再填寫本頁) -34 8 8 8 8 ABCD 經濟部智慧財產局員工消費合作社印製 498162 六、申請專利範圍 以測試與老化測試的電路裝置。 27·如申請專利範圍第19項之容座,進一步包括一接地電 極其係結合入該基材頂面於實質上位於薄細長條下方 的一區。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)Binding Book Paper Scale Coffee Towel® Standard (CNS) A4 Specification (210X297mm) 31 Patent Application Range Nickel A8 B8 C8 D8 Chromium and alloys of these materials made of hard metal _ Economic Department % Member of Intellectual Property Bureau X Consumer Cooperative prints the probe of item 1 of the “Patent Application” month, which further includes a circuit pattern located below the conductive tip and electrically connected to a thin strip. The probe, wherein the tip includes a reproduction of a pyramid-shaped pit engraved on the surface of the single crystal hair. 8. The probe of the scope of patent application item No.!, Wherein the tip includes a thin metal projection plated on a thinner surface than a thin film. High substantially vertical edge. 9. The probe of the first scope of the patent application, wherein the tip includes a metal spherical cross section. 10. The probe of the scope of the patent application, wherein the tip includes a hard metal film. The pillar is supported. The pillar has been etched so that the hard metal film is recessed to expose the bottom surface of the hard metal film. U · For example, the probe in the scope of patent application No. 1, wherein the pillar is an electric metal pillar. U For example, the probe in the scope of the patent application, further comprising an elastic dielectric material disposed between the thin sheet of the conductive material and the top surface of the substrate. 13. For the probe in the scope of the patent application, the elastic dielectric material It is selected from the group consisting of polylithium oxygen, fluoropolylithium oxygen, carbon fluoride and urethane elastomer. 14. A probe for electrically connecting a contact pad on a microelectronic device The probe contains: (a)-a thin and long strip of conductive material with a top surface and a surface; (please read the precautions on the back before filling this page) gutter bottom 32 A8 B8 C8 ________ D8 VI. Application The scope of the patent (b) supports a first end and a second end of the strip; (c) a conductive tip end is attached with a base system arranged on the top surface of the strip, wherein the tip end is raised beyond the top of the elongated strip (D) wherein the conductive tip end is disposed at a distance from the first end of the conductive strip and a second end of the conductive strip, and is also disposed at the center of the support member connected to the first end as far as the first The virtual line at the center of the support at both ends is a certain distance; (e) In this way, the conductive tip end moves in the vertical direction by the crossbow slender strip. 15. If the probe of the scope of patent application No. 14, wherein the long crossbow includes connecting the center of the first end to the second end The virtual line in the center of the support is the center twisted curved strip. 16. The probe of item 14 in the scope of the patent application, wherein the thin strip includes a conductive sheet, a metal film, and a film of a dielectric material disposed therebetween, here The metal thin film is connected to the ground circuit. 17. The probe according to item 14 of the patent application scope, wherein the thin strip includes a flat metal piece, and the metal piece is rounded so that the pattern is curved in a parallel long direction. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 18. If the probe of the scope of application for patent No. 14, the first support member includes a first metal pillar and the second support member includes a second metal pillar 〇19. A Each receptacle of a microelectronic device is operated. Each receptacle has a substantially flat surface and an array of contact pads is arranged on the receptacle. The receptacle includes: (a) — the substrate has a top surface and a bottom surface; Standard (CNS) A4 (210X297 mm) 33 498162 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent application scope (b) Multiple flexible probes are used to make electrical connection with contact pads Wherein the net probe is arranged in an array on the top surface of the substrate; U) the circuit device is connected to the flexible probe, thereby the microelectronic device can be actuated when the flexible probe is connected to the contact pad; (d ) Each of the flexible probes includes an elongated strip of conductive material with a first end and a second end, where the strip is supported by at least one pillar at the first end and at least one pillar at the second end. And 0) wherein the probe tip is set at a distance from the first end and the second end, so the probe tip is set at a virtual line connecting the center of gravity of the first end pillar to the center of the second end pillar distance. 20. The receptacle of claim 19, wherein the contact pad array is a regular area array of contact pads. 21. The receptacle of claim 19, wherein the contact pad array is a linear array of contact pads. 22. The receptacle according to item 19 of the scope of patent application, wherein the substrate is made of silicon material. 23. The receptacle of claim 20, wherein the microelectronic device is a plurality of integrated circuits arranged on an uncut silicon wafer. 24. The receptacle of claim 20, wherein the silicon material is a silicon wafer having a thickness of 200 micrometers to 1000 micrometers. 25. The receptacle of claim 19, wherein the substrate is made of a ceramic material. 26. For example, the holder of the scope of application for patent No. 25, wherein the substrate is a metal-ceramic multilayer structure, whereby each probe is connected to a microelectronic device. The paper size is applicable to China National Standard (CNS) A4 specifications. (21 Ox297 mm) I Pack-II order II line (please read the precautions on the back before filling this page) -34 8 8 8 8 ABCD Printed by the Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 498162 6. Scope of Patent Application To test and aging test circuit devices. 27. The receptacle according to item 19 of the scope of patent application, further comprising a region where a ground electrode is integrated into the top surface of the substrate substantially below the thin strip. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) 3535
TW89112199A 2000-06-21 2000-06-21 Compliant probe apparatus TW498162B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111830291A (en) * 2019-04-17 2020-10-27 株式会社Isc Test connector suitable for extremely low temperature

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111830291A (en) * 2019-04-17 2020-10-27 株式会社Isc Test connector suitable for extremely low temperature
TWI754257B (en) * 2019-04-17 2022-02-01 韓商Isc 股份有限公司 Test connector applicable at extremely low temperature
CN111830291B (en) * 2019-04-17 2023-04-07 株式会社Isc Test connector suitable for extremely low temperature

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