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TW202042359A - Chip on film package structure - Google Patents

Chip on film package structure Download PDF

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Publication number
TW202042359A
TW202042359A TW108115304A TW108115304A TW202042359A TW 202042359 A TW202042359 A TW 202042359A TW 108115304 A TW108115304 A TW 108115304A TW 108115304 A TW108115304 A TW 108115304A TW 202042359 A TW202042359 A TW 202042359A
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Taiwan
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pins
chip
bumps
width
pin
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TW108115304A
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Chinese (zh)
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陳崇龍
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南茂科技股份有限公司
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Priority to TW108115304A priority Critical patent/TW202042359A/en
Priority to CN201910509350.3A priority patent/CN111883500A/en
Publication of TW202042359A publication Critical patent/TW202042359A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A chip on film package structure includes flexible substrate, a plurality of leads, a chip and a plurality of bumps. The flexible substrate has a chip bonding area. The leads are disposed on the flexible substrate and include a plurality of first leads and a plurality of second leads. The first leads and the second leads are arranged alternately along a first side of the chip bonding area. The chip is located in the chip bonding area with an active surface of the chip facing the flexible substrate. The bumps are disposed on the active surface of the chip and include a plurality of first bumps and a plurality of second bumps adjacent to a first edge of the active surface. The first bumps are bonded to the first leads, the second bumps are bonded to the second leads, and a width of one of the first bumps bonded to one of the first leads is the same as a width of one of the second leads adjacent thereto.

Description

薄膜覆晶封裝結構Thin film flip chip package structure

本發明是有關於一種封裝結構,且特別是有關於一種薄膜覆晶封裝結構。The present invention relates to a packaging structure, and more particularly to a thin-film-on-chip packaging structure.

薄膜覆晶(Chip on Film, COF)封裝結構為常見的液晶顯示器的驅動晶片的封裝型態。隨著晶片上的凸塊數的增加、引腳數的增加與引腳間距的微縮,凸塊與引腳的佈局方式日益受限。The chip on film (COF) package structure is a common package type of the driver chip of the liquid crystal display. With the increase in the number of bumps on the wafer, the increase in the number of pins, and the shrinking of the pin pitch, the layout of bumps and pins is increasingly restricted.

就目前的凸塊與引腳的尺寸設計而言,凸塊的寬度係設計為大於引腳的的寬度,以確保凸塊與引腳相互接合時能保持足夠的接合面積。在微間距(Fine Pitch)的趨勢下,相鄰凸塊之間的間隔隨之縮減,一旦產生機台精度誤差或引腳偏移等情況時,相鄰凸塊之間的既有間距可能難以提供足夠的安全空間或緩衝空間,使得凸塊搭接相鄰引腳的風險大幅提高。As far as the current size design of the bump and the pin is concerned, the width of the bump is designed to be greater than the width of the pin to ensure that the bump and the pin are connected to each other to maintain a sufficient joint area. Under the trend of Fine Pitch, the spacing between adjacent bumps will be reduced accordingly. Once machine accuracy errors or pin offsets occur, the existing spacing between adjacent bumps may be difficult Provide enough safety space or buffer space, so that the risk of bumps overlapping adjacent pins is greatly increased.

本發明提供一種薄膜覆晶封裝結構,有助於降低凸塊搭接相鄰引腳的風險。The invention provides a thin film flip chip packaging structure, which helps reduce the risk of bumps overlapping adjacent pins.

本發明的薄膜覆晶封裝結構包括可撓性基材、多個引腳、晶片以及多個凸塊。可撓性基材具有晶片接合區。晶片接合區具有相對的第一側邊與第二側邊。這些引腳設置於可撓性基材上。這些引腳包括多個第一引腳與多個第二引腳。這些第一引腳與這些第二引腳沿著第一側邊交錯排列,且自晶片接合區內經過第一側邊延伸而出。晶片位於晶片接合區內。晶片具有主動面,主動面具有相對的第一邊緣與第二邊緣,且主動面面向可撓性基材。第一邊緣鄰近晶片接合區的第一側邊,第二邊緣鄰近晶片接合區的第二側邊。這些凸塊設置於晶片之主動面上。這些凸塊包括鄰近第一邊緣的多個第一凸塊與多個第二凸塊。這些第一凸塊接合於這些第一引腳,這些第二凸塊接合於這些第二引腳,且接合於這些第一引腳的其一的第一凸塊的寬度與相鄰的第二引腳的寬度相等。The chip-on-film package structure of the present invention includes a flexible substrate, a plurality of pins, a chip, and a plurality of bumps. The flexible substrate has a wafer bonding area. The wafer bonding area has opposite first and second sides. These pins are arranged on the flexible substrate. These pins include multiple first pins and multiple second pins. The first pins and the second pins are alternately arranged along the first side edge, and extend from the chip bonding area through the first side edge. The wafer is located in the wafer bonding area. The chip has an active surface, the active surface has opposite first and second edges, and the active surface faces the flexible substrate. The first edge is adjacent to the first side of the wafer bonding area, and the second edge is adjacent to the second side of the wafer bonding area. These bumps are arranged on the active surface of the chip. The bumps include a plurality of first bumps and a plurality of second bumps adjacent to the first edge. The first bumps are connected to the first pins, the second bumps are connected to the second pins, and the width of the first bump connected to one of the first pins is the same as that of the adjacent second pin. The widths of the pins are equal.

在本發明的一實施例中,上述的薄膜覆晶封裝結構在平行於第一邊緣的方向上,這些第二凸塊與這些第一凸塊交錯排列。這些第二凸塊較這些第一凸塊靠近晶片的中央,這些第二引腳的端部較這些第一引腳的端部靠近晶片接合區的中央。In an embodiment of the present invention, in the above-mentioned chip-on-film package structure in a direction parallel to the first edge, the second bumps and the first bumps are arranged alternately. The second bumps are closer to the center of the wafer than the first bumps, and the ends of the second pins are closer to the center of the die bonding area than the ends of the first pins.

在本發明的一實施例中,上述的每一第二凸塊的寬度大於對應接合的第二引腳的寬度。In an embodiment of the present invention, the width of each of the above-mentioned second bumps is greater than the width of the correspondingly joined second pin.

在本發明的一實施例中,上述的與相鄰的第二引腳的寬度相等的第一凸塊的寬度小於等於對應接合的第一引腳的寬度。In an embodiment of the present invention, the width of the first bump equal to the width of the adjacent second pin is less than or equal to the width of the first pin that is correspondingly joined.

在本發明的一實施例中,上述的與相鄰的第二引腳的寬度相等的第一凸塊的寬度與對應接合的第一引腳的寬度的比值介於0.8至1。In an embodiment of the present invention, the ratio of the width of the first bump equal to the width of the adjacent second pin to the width of the correspondingly joined first pin is between 0.8 and 1.

在本發明的一實施例中,上述的相鄰的任二第一引腳之間設有一第二引腳或相鄰的任二第二引腳之間設有一第一引腳。In an embodiment of the present invention, a second pin is provided between any two adjacent first pins or a first pin is provided between any two adjacent second pins.

在本發明的一實施例中,上述的相鄰的第一凸塊的寬度方向與第二引腳的寬度方向平行於晶片的第一邊緣。In an embodiment of the present invention, the width direction of the adjacent first bumps and the width direction of the second pins are parallel to the first edge of the chip.

在本發明的一實施例中,上述的該些引腳包括多個第三引腳。這些第三引腳沿著第二側邊排列,且自晶片接合區內經過第二側邊延伸而出。這些凸塊包括鄰近第二邊緣的多個第三凸塊,這些第三凸塊接合於這些第三引腳。In an embodiment of the present invention, the aforementioned pins include a plurality of third pins. The third pins are arranged along the second side edge and extend from the chip bonding area through the second side edge. The bumps include a plurality of third bumps adjacent to the second edge, and the third bumps are connected to the third pins.

在本發明的一實施例中,上述的薄膜覆晶封裝結構更包括防銲層。防銲層位於可撓性基材上且局部覆蓋這些引腳。防銲層具有開口暴露出晶片接合區。In an embodiment of the present invention, the above-mentioned thin film flip chip package structure further includes a solder mask layer. The solder mask is located on the flexible substrate and partially covers these pins. The solder mask has an opening to expose the wafer bonding area.

在本發明的一實施例中,上述的薄膜覆晶封裝結構更包括封裝膠體。封裝膠體至少填充於晶片與可撓性基材之間。In an embodiment of the present invention, the above-mentioned chip-on-film packaging structure further includes a packaging compound. The encapsulant is filled at least between the chip and the flexible substrate.

基於上述,本發明的薄膜覆晶封裝結構係將多個凸塊的其中一部分的寬度設計為與其相鄰的引腳的寬度相等,在不影響引腳間距的前提下,凸塊與相鄰的引腳之間的間距得以加大。一旦產生機台精度誤差或引腳偏移等情況,由於凸塊與相鄰的引腳之間保有足夠的間距作為安全空間或緩衝空間,因此有助於降低凸塊搭接相鄰引腳的風險,以提高製程良率及薄膜覆晶封裝結構的產品可靠度。Based on the above, the film-on-chip package structure of the present invention is designed to design the width of a part of the multiple bumps to be equal to the width of the adjacent pins. Under the premise of not affecting the lead spacing, the bumps and the adjacent The spacing between the pins can be increased. Once machine accuracy errors or pin offsets occur, there is enough space between the bumps and adjacent pins as a safe space or buffer space, which helps to reduce the bumps overlapping adjacent pins. Risks to improve the process yield and product reliability of the film-on-chip package structure.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。圖1B是圖1A的區域A的放大示意圖。圖1C是圖1B沿剖線B-B’的剖面示意圖。為求清楚表示引腳120、晶片130與凸塊140之間的連接關係,圖1A的晶片130與防焊層150採用透視繪法呈現,並省略繪示封裝膠體160。FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is an enlarged schematic diagram of area A of FIG. 1A. Fig. 1C is a schematic cross-sectional view of Fig. 1B along the section line B-B'. In order to clearly show the connection relationship between the pins 120, the chip 130 and the bumps 140, the chip 130 and the solder mask 150 of FIG. 1A are presented by a perspective drawing method, and the packaging gel 160 is omitted.

請參考圖1A至圖1C,在本實施例中,薄膜覆晶封裝結構100包括可撓性基材110、多個引腳120、晶片130以及多個凸塊140,其中可撓性基材110可以是由聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚醯亞胺(Polyimide, PI)、聚醚(polyethersulfone, PES)、碳酸脂(polycarbonate, PC)或其他適合的可撓性材料製成。另一方面,可撓性基材110用以承載這些引腳120,其中可撓性基材110具有晶片接合區112,且晶片接合區112具有相對的第一側邊112a與第二側邊112b。1A to 1C, in this embodiment, the film-on-chip package structure 100 includes a flexible substrate 110, a plurality of pins 120, a chip 130, and a plurality of bumps 140. The flexible substrate 110 It can be made of polyethylene terephthalate (PET), polyimide (PI), polyethersulfone (PES), carbonate (polycarbonate, PC) or other suitable flexibility Made of materials. On the other hand, the flexible substrate 110 is used to carry the pins 120, wherein the flexible substrate 110 has a chip bonding area 112, and the chip bonding area 112 has a first side 112a and a second side 112b opposite to each other. .

具體而言,這些引腳120設置於可撓性基材110上,且這些引腳120包括多個第一引腳122與多個第二引腳124,其中這些第一引腳122與這些第二引腳124沿著第一側邊112a交錯排列,且自晶片接合區112內經過第一側邊112a延伸而出。也就是說,相鄰的任二第一引腳122之間設有至少一第二引腳124,或者是相鄰的任二第二引腳124之間設有至少一第一引腳122。此外,這些第一引腳122與這些第二引腳124各別具有在晶片接合區112內的一區段與在晶片接合區112外的另一區段。Specifically, the pins 120 are disposed on the flexible substrate 110, and the pins 120 include a plurality of first pins 122 and a plurality of second pins 124, wherein the first pins 122 and the second pins 124 The two pins 124 are arranged alternately along the first side 112 a and extend from the chip bonding area 112 through the first side 112 a. That is, at least one second pin 124 is provided between any two adjacent first pins 122, or at least one first pin 122 is provided between any two adjacent second pins 124. In addition, the first pins 122 and the second pins 124 respectively have a section inside the wafer bonding area 112 and another section outside the wafer bonding area 112.

另一方面,各個第二引腳124在晶片接合區112內的區段的長度較各個第一引腳122在晶片接合區112內的區段的長度為長。也就是說,各個第二引腳124的端部124a較各個第一引腳122的端部122a靠近晶片接合區112的中央C,或者是各個第二引腳124的端部124a較各個第一引腳122的端部122a遠離晶片接合區112的第一側邊112a。晶片130位於晶片接合區112內,晶片130具有主動面130a,其中晶片130以其主動面130a朝向可撓性基材110,且透過設置於主動面130a上的這些凸塊140接合位於晶片接合區112內的這些引腳120。On the other hand, the length of each second pin 124 in the wafer bonding area 112 is longer than the length of each first pin 122 in the wafer bonding area 112. That is, the end 124a of each second pin 124 is closer to the center C of the wafer bonding area 112 than the end 122a of each first pin 122, or the end 124a of each second pin 124 is closer to the center C of the wafer bonding area 112 than the end 122a of each first pin 122. The end 122 a of the pin 122 is far away from the first side 112 a of the die bonding area 112. The chip 130 is located in the chip bonding area 112. The chip 130 has an active surface 130a. The chip 130 has its active surface 130a facing the flexible substrate 110 and is bonded to the chip bonding area through the bumps 140 provided on the active surface 130a. 112 of these pins 120 within.

進一步來說,晶片130的主動面130a具有相對的第一邊緣E1與第二邊緣E2,其中第一邊緣E1鄰近晶片接合區112的第一側邊112a,且第二邊緣E2鄰近晶片接合區112的第二側邊112b。第一邊緣E1與第二邊緣E2可以是晶片130的長邊,其中這些凸塊140包括鄰近第一邊緣E1的多個第一凸塊142與多個第二凸塊144,這些第一凸塊142接合於這些第一引腳122,且這些第二凸塊144接合於這些第二引腳124。更進一步來說,在平行於第一邊緣E1的方向D上,這些第二凸塊144與這些第一凸塊142交錯排列,且這些第二凸塊144較這些第一凸塊142靠近晶片130的中央C。舉例來說,在平行於第一邊緣E1的方向D上,這些第二凸塊144彼此對準,這些第一凸塊142彼此對準,且任一第二凸塊144錯位於任一第一凸塊142。Furthermore, the active surface 130a of the chip 130 has a first edge E1 and a second edge E2 opposite to each other. The first edge E1 is adjacent to the first side 112a of the chip bonding area 112, and the second edge E2 is adjacent to the chip bonding area 112. The second side 112b. The first edge E1 and the second edge E2 may be the long sides of the wafer 130, wherein the bumps 140 include a plurality of first bumps 142 and a plurality of second bumps 144 adjacent to the first edge E1. These first bumps 142 is connected to the first pins 122, and the second bumps 144 are connected to the second pins 124. Furthermore, in the direction D parallel to the first edge E1, the second bumps 144 and the first bumps 142 are arranged alternately, and the second bumps 144 are closer to the chip 130 than the first bumps 142. The central C. For example, in the direction D parallel to the first edge E1, the second bumps 144 are aligned with each other, the first bumps 142 are aligned with each other, and any second bump 144 is staggered at any first edge. Bump 142.

基於上述凸塊140與引腳120的佈局,薄膜覆晶封裝結構100能滿足高引腳數、高凸塊數以及細間距的設計需求。Based on the above-mentioned layout of bumps 140 and pins 120, the film-on-chip package structure 100 can meet the design requirements of high pin count, high bump count and fine pitch.

在本實施例中,接合於這些第一引腳122的其一的第一凸塊142的寬度142W與相鄰的第二引腳124的寬度124W相等,且相鄰的第一凸塊142與第二引腳124的寬度方向可以是平行於晶片130的第一邊緣E1。因此,相鄰的第一凸塊142與第二引腳124之間保有較大的間距,一旦產生機台精度誤差或引腳偏移等情況,由於相鄰的第一凸塊142與第二引腳124之間保有足夠的間距作為安全空間或緩衝空間,因此有助於降低第一凸塊142搭接相鄰第二引腳124的風險,以提高製程良率及薄膜覆晶封裝結構100的產品可靠度。In this embodiment, the width 142W of the first bump 142 joined to one of the first pins 122 is equal to the width 124W of the adjacent second pin 124, and the adjacent first bump 142 is The width direction of the second pin 124 may be parallel to the first edge E1 of the wafer 130. Therefore, the adjacent first bump 142 and the second pin 124 maintain a relatively large distance. Once the machine accuracy error or pin offset occurs, the adjacent first bump 142 and the second pin 124 Enough spacing between the leads 124 is used as a safety space or buffer space, thus helping to reduce the risk of the first bump 142 overlapping the adjacent second lead 124, thereby improving the process yield and the thin film flip chip packaging structure 100 The reliability of the product.

舉例來說,第一凸塊142的寬度142W與第二引腳124的寬度124W可為8微米(micrometer, µm),但本發明不限於此。另一方面,每一第二凸塊144的寬度144W可以是大於對應接合的第二引腳124的寬度124W,據以提供較佳的接合效果。舉例來說,第二凸塊144的寬度144W可為13微米至15微米,但本發明不限於此。因這些第二凸塊144的寬度144W設計為大於這些第二引腳124的寬度124W,晶片130接合這些引腳120時若產生引腳偏移的情況,第二凸塊144與第二引腳124之間仍可保持足夠的接合面積,使得凸塊與引腳之間維持良好的接合強度,並進一步抑制引腳與凸塊抵接時偏移的程度。For example, the width 142W of the first bump 142 and the width 124W of the second pin 124 may be 8 micrometers (micrometer, µm), but the invention is not limited thereto. On the other hand, the width 144W of each second bump 144 may be greater than the width 124W of the corresponding second pin 124 to be joined, so as to provide a better joining effect. For example, the width 144W of the second bump 144 may be 13 μm to 15 μm, but the present invention is not limited thereto. Since the width 144W of the second bumps 144 is designed to be greater than the width 124W of the second pins 124, if the pin offset occurs when the chip 130 is bonded to the pins 120, the second bumps 144 and the second pins A sufficient bonding area can still be maintained between the 124, so that a good bonding strength between the bump and the pin is maintained, and the degree of deviation of the pin and the bump when abutting is further suppressed.

在本實施例中,各個第一凸塊142的寬度142W與對應接合的第一引腳122的寬度122W可相同。換句話說,各個第一引腳122的寬度122W與相鄰的第二引腳124的寬度124W可相同,例如是8微米,但本發明不限於此。In this embodiment, the width 142W of each first bump 142 and the width 122W of the correspondingly joined first pin 122 may be the same. In other words, the width 122W of each first pin 122 and the width 124W of the adjacent second pin 124 may be the same, for example, 8 microns, but the invention is not limited to this.

在本實施例中,這些引腳122還可以包括多個第三引腳126,而這些凸塊140包括鄰近第二邊緣E2的多個第三凸塊146。這些第三引腳126可以是沿著該第二側邊112b排列,且自晶片接合區112內經過第二側邊112b延伸而出,其中這些第三凸塊146接合於這些第三引腳126。另一方面,為保護引腳120、避免引腳120受損或異物汙染造成引腳橋接的情況產生,薄膜覆晶封裝結構100還可包括防焊層150,其中防焊層150位於可撓性基材110上,且局部覆蓋這些引腳120。防焊層150暴露出晶片接合區112,進一步來說,防銲層150具有開口152,且晶片接合區112實質上是由防銲層150的開口152所界定。In this embodiment, the pins 122 may also include a plurality of third pins 126, and the bumps 140 include a plurality of third bumps 146 adjacent to the second edge E2. The third pins 126 may be arranged along the second side 112b and extend from the chip bonding area 112 through the second side 112b, wherein the third bumps 146 are bonded to the third pins 126 . On the other hand, in order to protect the pins 120 and prevent the pins 120 from being damaged or contaminated by foreign objects causing pin bridging, the thin film flip chip package structure 100 may further include a solder mask 150, wherein the solder mask 150 is located on the flexible On the substrate 110, these pins 120 are partially covered. The solder mask layer 150 exposes the chip bonding area 112. Further, the solder mask layer 150 has an opening 152, and the chip bonding area 112 is substantially defined by the opening 152 of the solder mask layer 150.

此外,為保護凸塊140以及引腳120的電性接點,避免濕氣及汙染侵入,薄膜覆晶封裝結構100還可包括封裝膠體160,其中封裝膠體160至少填充於晶片130與可撓性基材110之間,且能進一步覆蓋至防焊層150的開口152的周圍以及晶片130的側表面。In addition, in order to protect the electrical contacts of the bumps 140 and the pins 120, and avoid the intrusion of moisture and pollution, the film-on-chip packaging structure 100 may further include a packaging compound 160, wherein the packaging compound 160 is at least filled in the chip 130 and flexible Between the substrates 110 and can further cover the periphery of the opening 152 of the solder mask 150 and the side surface of the chip 130.

圖1D是本發明一實施例的薄膜覆晶封裝結構的局部俯視示意圖。圖1E是先前技術的薄膜覆晶封裝結構的局部俯視示意圖。特別說明的是,圖1D中的虛線引腳用以表示這些第二引腳124產生偏移後的位置,而圖1E中的虛線引腳即用以表示這些第二引腳1241產生偏移後的位置。FIG. 1D is a schematic partial top view of a chip on film package structure according to an embodiment of the invention. FIG. 1E is a schematic partial top view of a chip on film package structure of the prior art. In particular, the dotted pins in FIG. 1D are used to indicate the positions of the second pins 124 after they are offset, and the dotted pins in FIG. 1E are used to indicate that the second pins 1241 are offset. s position.

舉例來說,若第一凸塊142的寬度142W為8微米,第二凸塊144的寬度144W為13微米,且第一凸塊142的中心與第二凸塊144的中心的距離為16微米,則第一凸塊142與第二凸塊144之間的間隔S1為5.5微米,如圖1D所示。另一方面,若第一凸塊1421的寬度W1與第二凸塊1441的寬度W2皆為13微米,且第一凸塊1421的中心與第二凸塊1441的中心的距離為16微米,則第一凸塊1421與第二凸塊1441之間的間隔S2為3微米,如圖1E所示。For example, if the width 142W of the first bump 142 is 8 microns, the width 144W of the second bump 144 is 13 microns, and the distance between the center of the first bump 142 and the center of the second bump 144 is 16 microns , The interval S1 between the first bump 142 and the second bump 144 is 5.5 microns, as shown in FIG. 1D. On the other hand, if the width W1 of the first bump 1421 and the width W2 of the second bump 1441 are both 13 μm, and the distance between the center of the first bump 1421 and the center of the second bump 1441 is 16 μm, then The interval S2 between the first bump 1421 and the second bump 1441 is 3 microns, as shown in FIG. 1E.

接續上述,第一凸塊142與第二凸塊144之間的間隔S1(例如5.5微米)遠大於第一凸塊1421與第二凸塊1441之間的間隔S2(例如3微米),若第二引腳1241產生偏移,則第二引腳1241極容易搭接到與其相鄰的第一凸塊1421。相較於此,因本實施例的第一凸塊142與第二凸塊144之間的間隔S1較大,即便第二引腳124產生偏移,第二引腳124與相鄰的第一凸塊142之間仍保有足夠的緩衝空間,有助於防止第二引腳124與相鄰的第一凸塊142搭接。Continuing the above, the interval S1 (for example, 5.5 microns) between the first bump 142 and the second bump 144 is much larger than the interval S2 (for example, 3 microns) between the first bump 1421 and the second bump 1441. When the two pins 1241 are offset, the second pin 1241 is easily overlapped with the first bump 1421 adjacent thereto. Compared with this, since the interval S1 between the first bump 142 and the second bump 144 of this embodiment is relatively large, even if the second pin 124 is offset, the second pin 124 and the adjacent first There is still enough buffer space between the bumps 142, which helps prevent the second pin 124 from overlapping with the adjacent first bump 142.

圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。請參考圖2,本實施例的薄膜覆晶封裝結構100a類似於上述實施例的薄膜覆晶封裝結構100,而其差別在於:在薄膜覆晶封裝結構100a中,各個第一引腳122的寬度122W大於對應接合的第一凸塊142的寬度142W。更具體而言,第一凸塊142的寬度142W與對應接合的第一引腳122的寬度122W的比值可以是介於0.8至1,也就是說,第一凸塊142的寬度142W例如是8微米時,第一引腳122的寬度122W例如是介於8微米至10微米,但本發明不限於此。因這些第一引腳122的寬度122W設計大於這些第一凸塊142的寬度144W,晶片130接合這些引腳120時若產生引腳偏移的情況,第一凸塊142與第一引腳122間仍可保持足夠的接合面積,使得凸塊與引腳之間維持良好的接合強度。2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention. Please refer to FIG. 2, the chip-on-film package structure 100a of this embodiment is similar to the chip-on-film package structure 100 of the above-mentioned embodiment, but the difference lies in: in the chip-on-film package structure 100a, the width of each first pin 122 122W is greater than the width 142W of the first bump 142 that is correspondingly joined. More specifically, the ratio of the width 142W of the first bump 142 to the width 122W of the first pin 122 to be joined may be between 0.8 and 1, that is, the width 142W of the first bump 142 is 8 for example. In the case of micrometers, the width 122W of the first pin 122 is, for example, between 8 micrometers and 10 micrometers, but the invention is not limited thereto. Since the width 122W of the first pins 122 is designed to be greater than the width 144W of the first bumps 142, if the chip 130 is bonded to the pins 120, if there is a pin offset, the first bumps 142 and the first pins 122 It can still maintain a sufficient bonding area between the bumps and the pins to maintain a good bonding strength.

綜上所述,本發明薄膜覆晶封裝結構係將第一凸塊的寬度設計為與其相鄰的第二引腳的寬度相等,在不影響引腳間距的前提下,第一凸塊與相鄰的第二引腳之間的間距得以加大。一旦產生機台精度誤差或引腳偏移等情況,由於第一凸塊與相鄰的第二引腳之間保有足夠的間距作為安全空間或緩衝空間,因此有助於降低第一凸塊搭接相鄰第二引腳的風險,以提高製程良率及薄膜覆晶封裝結構的產品可靠度。In summary, the thin film flip chip package structure of the present invention designs the width of the first bump to be equal to the width of the adjacent second pin, and the first bump and the phase The distance between adjacent second pins can be increased. Once machine accuracy errors or pin offsets occur, there is enough space between the first bump and the adjacent second pin as a safe space or buffer space, which helps to reduce the first bump The risk of connecting the adjacent second pin is to improve the process yield and the product reliability of the film-on-chip package structure.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100、100a、100b:薄膜覆晶封裝結構 110:可撓性基材 112:晶片接合區 112a:第一側邊 112b:第二側邊 120:引腳 122、1221:第一引腳 122a、124a:端部 122W:第一引腳的寬度 124、1241:第二引腳 124W:第二引腳的寬度 126:第三引腳 130:晶片 130a:主動面 140:凸塊 142、1421:第一凸塊 142W、W1:第一凸塊的寬度 144、1441:第二凸塊 144W、W2:第二凸塊的寬度 146:第三凸塊 150:防焊層 160:封裝膠體 A:區域 C:中央 D:方向 E1:第一邊緣 E2:第二邊緣100, 100a, 100b: Thin film flip chip package structure 110: Flexible substrate 112: wafer bonding area 112a: first side 112b: second side 120: pin 122, 1221: first pin 122a, 124a: end 122W: width of the first pin 124, 1241: second pin 124W: the width of the second pin 126: third pin 130: chip 130a: active side 140: bump 142, 1421: first bump 142W, W1: the width of the first bump 144, 1441: second bump 144W, W2: the width of the second bump 146: third bump 150: solder mask 160: Encapsulation colloid A: area C: Central D: direction E1: First edge E2: second edge

圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。 圖1B是圖1A的區域A的放大示意圖。 圖1C是圖1B沿剖線B-B’的剖面示意圖。 圖1D是本發明一實施例的薄膜覆晶封裝結構的局部俯視示意圖。 圖1E是先前技術的薄膜覆晶封裝結構的局部俯視示意圖。 圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is an enlarged schematic diagram of area A of FIG. 1A. Fig. 1C is a schematic cross-sectional view of Fig. 1B along the section line B-B'. FIG. 1D is a schematic partial top view of a chip on film package structure according to an embodiment of the invention. FIG. 1E is a schematic partial top view of a chip on film package structure of the prior art. 2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention.

110:可撓性基材 110: Flexible substrate

112:晶片接合區 112: wafer bonding area

112a:第一側邊 112a: first side

120:引腳 120: pin

122:第一引腳 122: first pin

122W:第一引腳的寬度 122W: width of the first pin

124:第二引腳 124: second pin

124W:第二引腳的寬度 124W: the width of the second pin

130:晶片 130: chip

140:凸塊 140: bump

142:第一凸塊 142: The first bump

142W:第一凸塊的寬度 142W: the width of the first bump

144:第二凸塊 144: second bump

144W:第二凸塊的寬度 144W: the width of the second bump

A:區域 A: area

E1:第一邊緣 E1: First edge

Claims (10)

一種薄膜覆晶封裝結構,包括: 可撓性基材,具有晶片接合區,該晶片接合區具有相對的第一側邊與第二側邊; 多個引腳,設置於該可撓性基材上,其中該些引腳包括多個第一引腳與多個第二引腳,該些第一引腳與該些第二引腳沿著該第一側邊交錯排列,且自該晶片接合區內經過該第一側邊延伸而出; 晶片,位於該晶片接合區內,該晶片具有主動面,該主動面具有相對的第一邊緣與第二邊緣,且該主動面面向該可撓性基材,其中該第一邊緣鄰近該晶片接合區的該第一側邊,該第二邊緣鄰近該晶片接合區的該第二側邊;以及 多個凸塊,設置於該晶片之該主動面上,其中該些凸塊包括鄰近該第一邊緣的多個第一凸塊與多個第二凸塊,該些第一凸塊接合於該些第一引腳,該些第二凸塊接合於該些第二引腳,且接合於該些第一引腳的其一的一該第一凸塊的寬度與相鄰的一該第二引腳的寬度相等。A film-on-chip packaging structure includes: The flexible substrate has a chip bonding area, and the chip bonding area has a first side and a second side opposite to each other; A plurality of pins are arranged on the flexible substrate, wherein the pins include a plurality of first pins and a plurality of second pins, and the first pins and the second pins are along The first side edges are staggered and extend from the chip bonding area through the first side edge; A chip is located in the chip bonding area, the chip has an active surface, the active surface has a first edge and a second edge opposite, and the active surface faces the flexible substrate, wherein the first edge is adjacent to the chip bonding The first side of the area, the second edge is adjacent to the second side of the wafer bonding area; and A plurality of bumps are disposed on the active surface of the chip, wherein the bumps include a plurality of first bumps and a plurality of second bumps adjacent to the first edge, and the first bumps are bonded to the The first pins, the second bumps are joined to the second pins, and the width of a first bump joined to one of the first pins is adjacent to the second The widths of the pins are equal. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中在平行於該第一邊緣的方向上,該些第二凸塊與該些第一凸塊交錯排列,且該些第二凸塊較該些第一凸塊靠近該晶片的中央,該些第二引腳的端部較該些第一引腳的端部靠近該晶片接合區的中央。In the thin-film-on-chip package structure described in claim 1, wherein in a direction parallel to the first edge, the second bumps and the first bumps are staggered, and the second bumps The block is closer to the center of the chip than the first bumps, and the ends of the second pins are closer to the center of the bonding area of the chip than the ends of the first pins. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中每一該第二凸塊的寬度大於對應接合的該第二引腳的寬度。In the chip-on-film package structure described in claim 1, wherein the width of each of the second bumps is greater than the width of the correspondingly bonded second pin. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中與相鄰的一該第二引腳的寬度相等的一該第一凸塊的寬度小於等於對應接合的該第一引腳的寬度。As claimed in the first item of the patent application, the width of the first bump that is equal to the width of the adjacent second pin is less than or equal to the width of the corresponding first pin width. 如申請專利範圍第4項所述的薄膜覆晶封裝結構,其中與相鄰的一該第二引腳的寬度相等的一該第一凸塊的寬度與對應接合的該第一引腳的寬度的比值介於0.8至1。The chip-on-film package structure according to claim 4, wherein the width of the first bump that is equal to the width of the adjacent second pin and the width of the first pin that is correspondingly joined The ratio of is between 0.8 and 1. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中相鄰的任二該第一引腳之間設有一該第二引腳或相鄰的任二該第二引腳之間設有一該第一引腳。As described in the first item of the scope of patent application, the thin film flip chip package structure, wherein a second pin is provided between any two adjacent first pins or a second pin is provided between any two adjacent second pins There is this first pin. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中相鄰的一該第一凸塊的寬度方向與一該第二引腳的寬度方向平行於該晶片的該第一邊緣。According to the first aspect of the patent application, the width direction of the first bump and the width direction of the second pin are parallel to the first edge of the chip. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中該些引腳包括多個第三引腳,該些第三引腳沿著該第二側邊排列,且自該晶片接合區內經過該第二側邊延伸而出,該些凸塊包括鄰近該第二邊緣的多個第三凸塊,該些第三凸塊接合於該些第三引腳。In the thin film flip chip package structure described in claim 1, wherein the pins include a plurality of third pins, and the third pins are arranged along the second side edge and extend from the die bonding area The inside extends out through the second side edge, the bumps include a plurality of third bumps adjacent to the second edge, and the third bumps are connected to the third pins. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,更包括防銲層,位於該可撓性基材上且局部覆蓋該些引腳,該防銲層具有一開口暴露出該晶片接合區。As described in the first item of the patent application, the film-on-chip package structure further includes a solder mask layer on the flexible substrate and partially covering the pins. The solder mask layer has an opening to expose the chip bonding Area. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,更包括封裝膠體,至少填充於該晶片與該可撓性基材之間。As described in the first item of the patent application, the film-on-chip packaging structure further includes a packaging glue filled at least between the chip and the flexible substrate.
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US10388626B2 (en) * 2000-03-10 2019-08-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming flipchip interconnect structure
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US9960151B2 (en) * 2016-08-02 2018-05-01 Novatek Microelectronics Corp. Semiconductor device, display panel assembly, semiconductor structure
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