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TW202036851A - Semiconductor device - Google Patents

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TW202036851A
TW202036851A TW108126785A TW108126785A TW202036851A TW 202036851 A TW202036851 A TW 202036851A TW 108126785 A TW108126785 A TW 108126785A TW 108126785 A TW108126785 A TW 108126785A TW 202036851 A TW202036851 A TW 202036851A
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semiconductor substrate
material layer
semiconductor
layer
semiconductor device
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TW108126785A
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TWI707454B (en
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大野天頌
藤田努
久米一平
友野章
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日商東芝記憶體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face. A semiconductor element is provided on the first face of the semiconductor substrate. A polycrystalline or non-crystalline first material layer is provided at least on an outer edge of the first face of the semiconductor substrate. A second material layer is provided on the second face of the semiconductor substrate. The second material layer transmits laser light.

Description

半導體裝置Semiconductor device

本實施形態係關於一種半導體裝置。The present embodiment relates to a semiconductor device.

切割技術係一種使用雷射將半導體晶圓之內部改質，並以改質部分為起點將半導體晶圓劈開之方法。但，自改質部分擴大之劈開之直進性較弱，因此存在位於半導體晶圓切割線上之材料膜不被直線地分割，從而分割線蜿蜒之情況。若於利用雷射加以改質後，再藉由研磨步驟使半導體晶圓變薄，則材料膜之分割線會更大程度地彎曲，而導致裂痕到達至器件區域。The dicing technology is a method of using a laser to modify the inside of a semiconductor wafer and splitting the semiconductor wafer with the modified part as a starting point. However, the straightness of the splitting expanded from the modified part is weak, so the material film on the dicing line of the semiconductor wafer is not linearly divided, and the dicing line may meander. If the semiconductor wafer is thinned by the polishing step after the laser is used for modification, the dividing line of the material film will bend to a greater extent, causing cracks to reach the device area.

本發明之一個實施形態提供一種能提高自改質部分擴大之劈開之直進性之半導體裝置。An embodiment of the present invention provides a semiconductor device capable of improving the straightness of the cleavage of the self-modified part.

本實施形態之半導體裝置具備半導體基板，該半導體基板具有第1面、及相對於該第1面位於相反側之第2面。半導體元件設置於半導體基板之第1面。多晶或非晶質之第1材料層設置於半導體基板之第1面之至少外緣。可令雷射光透過之第2材料層設置於半導體基板之第2面。The semiconductor device of this embodiment includes a semiconductor substrate having a first surface and a second surface located on the opposite side of the first surface. The semiconductor element is arranged on the first surface of the semiconductor substrate. The polycrystalline or amorphous first material layer is disposed on at least the outer edge of the first surface of the semiconductor substrate. The second material layer that can transmit laser light is arranged on the second surface of the semiconductor substrate.

根據上述構成，可提供一種能製作出由具有高耐蝕性之含金屬有機膜構成之掩模圖案之高分子材料、含有該高分子材料之組合物、及半導體裝置之製造方法。According to the above configuration, it is possible to provide a polymer material capable of producing a mask pattern composed of a metal-containing organic film with high corrosion resistance, a composition containing the polymer material, and a method for manufacturing a semiconductor device.

以下，參照圖式對本發明之實施形態進行說明。本實施形態並不限定本發明。於以下實施形態中，半導體基板之上下方向表示將設置半導體元件之正面或背面設為上時之相對方向，有時與沿著重力加速度之上下方向不同。圖式係模式性或概念性者，各部分之比例等未必與實際情況相同。於說明書與圖式中，對與已於圖式出現過而於上文敍述過之要素相同之要素標註相同之符號，並酌情省略詳細之說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment does not limit the invention. In the following embodiments, the up-down direction of the semiconductor substrate refers to the relative direction when the front or back surface on which the semiconductor element is installed is set to the top, and may be different from the up-down direction along the gravitational acceleration. If the schema is modular or conceptual, the proportions of each part may not be the same as the actual situation. In the description and drawings, the same elements as those described above that have appeared in the drawings are marked with the same symbols, and detailed descriptions are omitted as appropriate.

(第1實施形態)  圖1係表示第1實施形態之半導體晶片之構成例之概略圖。作為半導體裝置之半導體晶片1例如可為具備NAND型快閃記憶體等半導體記憶裝置之半導體裝置。半導體記憶裝置之記憶單元陣列例如可為三維配置有記憶單元之立體式記憶單元陣列。(First Embodiment) Fig. 1 is a schematic diagram showing a configuration example of a semiconductor wafer of the first embodiment. The semiconductor chip 1 as a semiconductor device may be, for example, a semiconductor device provided with a semiconductor memory device such as a NAND flash memory. The memory cell array of the semiconductor memory device may be, for example, a three-dimensional memory cell array with memory cells arranged in three dimensions.

半導體晶片1具備半導體基板10、第1材料層20、設備層30、第2材料層40及改質層50。The semiconductor wafer 1 includes a semiconductor substrate 10, a first material layer 20, a device layer 30, a second material layer 40, and a modified layer 50.

半導體基板10例如為矽基板等。半導體基板10具有第1面F1、及相對於第1面F1位於相反側之第2面F2。又，半導體基板10具有位於第1面F1與第2面F2之間之側面F3。半導體基板10為大致長方體，側面F3設置於四角形之第1及第2面F1、F2之四邊。The semiconductor substrate 10 is, for example, a silicon substrate or the like. The semiconductor substrate 10 has a first surface F1 and a second surface F2 located on the opposite side to the first surface F1. In addition, the semiconductor substrate 10 has a side surface F3 located between the first surface F1 and the second surface F2. The semiconductor substrate 10 is a substantially rectangular parallelepiped, and the side surface F3 is provided on the four sides of the first and second surfaces F1 and F2 of the quadrangle.

於半導體基板10之第1面F1，設置有第1材料層20。第1材料層20為於特定方向上不具有結晶方位之多晶材料或非晶質材料。對於第1材料層20，使用例如多晶矽、非晶矽、氧化矽膜、氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁、鎢、鉬中任一種膜之單層或兩種以上膜之積層。或，對於第1材料層20，亦可使用兩種以上上述材料之混合材料。On the first surface F1 of the semiconductor substrate 10, a first material layer 20 is provided. The first material layer 20 is a polycrystalline material or an amorphous material that does not have a crystal orientation in a specific direction. For the first material layer 20, for example, a single layer or two of polysilicon, amorphous silicon, silicon oxide film, silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, aluminum oxide, tungsten, and molybdenum are used. The buildup of the above film. Or, for the first material layer 20, a mixed material of two or more of the above materials can also be used.

半導體基板10例如於第1面F1與第2面F2之對向方向(Z方向)上具有結晶方位，因此於切割步驟中，龜裂容易自改質層50沿著Z方向延展。相對於此，第1材料層20之上述材料於特定方向上不具有結晶方位，因此即便龜裂自改質層50延展，該龜裂之延展亦會於第1材料層20中停止。即，第1材料層20作為抑制自半導體基板10之改質層50產生之龜裂延展至設備層30之補強膜而發揮功能。For example, the semiconductor substrate 10 has a crystal orientation in the opposing direction (Z direction) of the first surface F1 and the second surface F2, and therefore cracks easily extend from the modified layer 50 along the Z direction during the cutting step. In contrast, the above-mentioned material of the first material layer 20 does not have a crystal orientation in a specific direction. Therefore, even if the cracks extend from the modified layer 50, the extension of the cracks will stop in the first material layer 20. That is, the first material layer 20 functions as a reinforcing film that suppresses cracks generated from the modified layer 50 of the semiconductor substrate 10 from spreading to the device layer 30.

通常，於雷射切割步驟中，使用紅外區域(800 nm至2500 nm)之雷射光，於半導體晶圓之切割區域之內部形成改質層50。之後，於擴片步驟中，藉由將半導體晶圓於擴片帶上自中心向外側整體繃拉，而以改質層50為起點一口氣將半導體晶圓劈開。此時，半導體晶圓於切割區域中被以大致直線狀劈開。Generally, in the laser cutting step, laser light in the infrared region (800 nm to 2500 nm) is used to form the modified layer 50 inside the cutting area of the semiconductor wafer. After that, in the expansion step, the semiconductor wafer is completely stretched from the center to the outside on the expansion tape, and the semiconductor wafer is split in one go with the modified layer 50 as a starting point. At this time, the semiconductor wafer is cleaved substantially linearly in the dicing area.

但，若對半導體晶圓之切割區域照射雷射光而形成改質層50，則自改質層50起始之劈開有可能會於擴片步驟前因對半導體晶圓之衝擊而容易地延展，進而導致龜裂到達至切割區域之表面。此種龜裂雖於如半導體基板10般之具有結晶方位之單晶材料中不會過分蜿蜒，但於形成在半導體基板10上之鈍化膜等中則會蜿蜒。此種龜裂之蜿蜒會使半導體晶片1之可靠性降低。進而，若龜裂到達設備層30之元件形成部31，便會成為缺陷。例如，於經薄膜化後之半導體晶圓中，來自改質層50之龜裂容易到達設備層30，因此作業時要特別注意。However, if laser light is irradiated to the dicing area of the semiconductor wafer to form the modified layer 50, the cleavage from the modified layer 50 may easily expand due to the impact on the semiconductor wafer before the expansion step. In turn, the cracks reach the surface of the cutting area. Although such a crack does not meander excessively in a single crystal material having a crystal orientation like the semiconductor substrate 10, it will meander in a passivation film or the like formed on the semiconductor substrate 10. The winding of such cracks will reduce the reliability of the semiconductor chip 1. Furthermore, if the crack reaches the element forming portion 31 of the device layer 30, it becomes a defect. For example, in a thin-filmed semiconductor wafer, the cracks from the modified layer 50 can easily reach the device layer 30, so special attention should be paid during the operation.

根據本實施形態，半導體晶片1於第1面F1之包括外緣在內之整體上具有第1材料層20，於第1材料層20上設置有設備層30。即，作為補強膜之第1材料層20設置於半導體基板10與設備層30之間。藉此，來自改質層50之龜裂於擴片步驟前朝設備層30延展之現象得到抑制。再者，於CMOS(Complementary Metal Oxide Semiconductor，互補金氧半導體)形成區域中，將第1材料層20去除而於設備層30形成CMOS。於其他區域中，第1材料層20殘留於設備層30上。According to this embodiment, the semiconductor wafer 1 has the first material layer 20 on the entire first surface F1 including the outer edge, and the device layer 30 is provided on the first material layer 20. That is, the first material layer 20 as a reinforcing film is provided between the semiconductor substrate 10 and the device layer 30. Thereby, the phenomenon that the cracks from the modified layer 50 spread toward the device layer 30 before the expansion step is suppressed. Furthermore, in the CMOS (Complementary Metal Oxide Semiconductor) formation region, the first material layer 20 is removed to form CMOS on the device layer 30. In other regions, the first material layer 20 remains on the device layer 30.

於半導體基板10之第2面F2，設置有第2材料層40。第2材料層40係可令用於切割步驟之雷射光透過，且楊氏模數較半導體基板10高之材料。對於第2材料層40，使用例如氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁中任一種膜之單層或兩種以上膜之積層。或，對於第2材料層40，亦可使用兩種以上上述材料之混合材料。A second material layer 40 is provided on the second surface F2 of the semiconductor substrate 10. The second material layer 40 is a material that can transmit laser light used in the cutting step and has a higher Young's modulus than the semiconductor substrate 10. For the second material layer 40, for example, a single layer of any one of silicon nitride film, diamond-like carbon, yttrium oxide, zirconia, and aluminum oxide or a stack of two or more films is used. Or, for the second material layer 40, a mixed material of two or more of the above materials can also be used.

第2材料層40之上述材料可令具有800 nm至2500 nm波長之紅外區域之雷射光透過。紅外區域之雷射光之透過率例如於氮化矽膜中，約為53%，於氧化鋯中，約為67%，於氧化鋁中，約為90%。儘管雷射光之透過率如此因材料而異，但第2材料層40之雷射光之透過率較佳為約25%以上。The above-mentioned materials of the second material layer 40 can transmit laser light in the infrared region with a wavelength of 800 nm to 2500 nm. The transmittance of laser light in the infrared region is, for example, about 53% in silicon nitride film, about 67% in zirconia, and about 90% in alumina. Although the transmittance of the laser light varies with materials, the transmittance of the laser light of the second material layer 40 is preferably about 25% or more.

於切割步驟中，雷射光自半導體基板10之第2面F2入射，而於半導體基板10之切割區域內形成改質層50。此時，若設置於第2面F2上之第2材料層40不可令雷射光透過，則第2材料層40會吸收雷射光，而不形成改質層50。因此，第2材料層40較佳為可令雷射光以至少能形成改質層50之程度透過之材料。In the cutting step, the laser light is incident from the second surface F2 of the semiconductor substrate 10 to form the modified layer 50 in the cutting area of the semiconductor substrate 10. At this time, if the second material layer 40 provided on the second surface F2 cannot transmit the laser light, the second material layer 40 will absorb the laser light and the modified layer 50 will not be formed. Therefore, the second material layer 40 is preferably a material that can transmit laser light to at least the extent that the modified layer 50 can be formed.

又，單晶矽之楊氏模數約為185 GPa。相對於此，第2材料層40之上述材料之楊氏模數高於185 GPa。例如，氮化矽膜之楊氏模數為280 GPa至300 GPa，類鑽碳之楊氏模數為185 GPa至800 GPa，氧化鋯之楊氏模數約為210 GPa，氧化鋁之楊氏模數為350 GPa至390 GPa。如此，第2材料層40較佳為硬於半導體基板10(單晶矽)。藉由使第2材料層40硬於半導體基板10，在切割步驟中，即便改質層50形成於半導體基板10內，亦會抑制龜裂延展至第2材料層40內。即，第2材料層40作為抑制自半導體基板10之改質層50產生之龜裂延展之補強膜而發揮功能。In addition, the Young's modulus of single crystal silicon is approximately 185 GPa. In contrast, the Young's modulus of the above-mentioned material of the second material layer 40 is higher than 185 GPa. For example, the Young's modulus of silicon nitride film is 280 GPa to 300 GPa, the Young's modulus of diamond-like carbon is 185 GPa to 800 GPa, the Young's modulus of zirconia is about 210 GPa, and that of alumina The modulus is 350 GPa to 390 GPa. As such, the second material layer 40 is preferably harder than the semiconductor substrate 10 (single crystal silicon). By making the second material layer 40 harder than the semiconductor substrate 10, even if the modified layer 50 is formed in the semiconductor substrate 10 in the cutting step, cracks are prevented from spreading into the second material layer 40. That is, the second material layer 40 functions as a reinforcing film that suppresses the spread of cracks generated from the modified layer 50 of the semiconductor substrate 10.

如此般，於第1面F1，第1材料層20抑制龜裂之延展，於第2面F2，第2材料層40抑制龜裂之延展。藉此，來自改質層50之龜裂能停留於半導體基板10內，直至於擴片步驟中擴片半導體晶圓。之後，於擴片步驟中，藉由擴片半導體晶圓，龜裂自改質層50向第1及第2材料層20、40、以及設備層30之切割部32朝大致鉛直方向(Z方向)延展。於擴片步驟中，龜裂朝第1及第2材料層20、40、以及設備層30之切割部32呈大致直線狀延展。即，根據本實施形態，能提高自改質層50擴大之龜裂之直進性。藉此，自半導體晶圓切斷所得之半導體晶片1之可靠性提高。In this way, on the first surface F1, the first material layer 20 suppresses the extension of cracks, and on the second surface F2, the second material layer 40 suppresses the extension of cracks. Thereby, the cracks from the modified layer 50 can stay in the semiconductor substrate 10 until the semiconductor wafer is expanded during the expansion step. After that, in the expanding step, by expanding the semiconductor wafer, the cracks from the modified layer 50 to the first and second material layers 20, 40, and the cutting portion 32 of the device layer 30 are substantially vertical (Z direction). ) Extension. In the expanding step, the cracks extend substantially linearly toward the first and second material layers 20 and 40 and the cutting portion 32 of the equipment layer 30. That is, according to this embodiment, the straightness of cracks expanded from the modified layer 50 can be improved. Thereby, the reliability of the semiconductor chip 1 obtained by cutting from the semiconductor wafer is improved.

設備層30設置於第1材料層20上。設備層30包含設置有半導體元件(未圖示)之元件形成部31、及設置於元件形成部31周圍(半導體晶片1外緣)之切割部32。形成於元件形成部31之半導體元件被鈍化膜等絕緣膜覆蓋而受到保護。又，於切割部32未形成半導體元件，而設置有絕緣膜。The device layer 30 is provided on the first material layer 20. The device layer 30 includes an element forming part 31 provided with a semiconductor element (not shown), and a cutting part 32 provided around the element forming part 31 (outer edge of the semiconductor wafer 1). The semiconductor element formed in the element formation portion 31 is covered with an insulating film such as a passivation film to be protected. In addition, a semiconductor element is not formed in the cut portion 32, but an insulating film is provided.

改質層50於半導體晶片1之側面F3上沿著與Z方向大致正交之方向(X或Y方向)延伸。改質層50係藉由脈衝狀之雷射光而斷斷續續地形成，且沿著切割區域於X或Y方向上形成。此種改質層50雖為斷斷續續地形成，但卻於X或Y方向上連續而成為大致層狀。由於第1材料層20係多晶材料或非晶質材料，故而雷射光之反射光容易散射。因此，關於藉由來自第1材料層20之反射光而形成之改質層，除了改質層50以外，便不易再形成其他改質層了。The modified layer 50 extends along a direction (X or Y direction) substantially orthogonal to the Z direction on the side surface F3 of the semiconductor wafer 1. The modified layer 50 is formed intermittently by pulsed laser light, and is formed in the X or Y direction along the cutting area. Although this modified layer 50 is formed intermittently, it is continuous in the X or Y direction and becomes a substantially layered shape. Since the first material layer 20 is a polycrystalline material or an amorphous material, the reflected light of the laser light is easily scattered. Therefore, regarding the modified layer formed by the reflected light from the first material layer 20, it is not easy to form other modified layers except for the modified layer 50.

其次，對雷射切割步驟進行說明。Next, the laser cutting step will be described.

圖2至圖9係表示切割步驟之概略圖。再者，於圖3至圖9中，為了方便起見，使第2面F2朝上而圖示半導體基板10。2 to 9 are schematic diagrams showing the cutting steps. In addition, in FIGS. 3 to 9, for convenience, the semiconductor substrate 10 is shown with the second surface F2 facing upward.

圖2係表示半導體晶圓W之俯視圖。如圖2所示，半導體晶圓W具備將成為半導體晶片1之複數個晶片區域Rchip、及將於切割步驟中被切斷之複數個切割區域Rd。半導體元件經過半導體製程而形成於晶片區域Rchip。進而，半導體元件被鈍化膜33等絕緣膜覆蓋。對於鈍化膜33，例如使用聚醯亞胺。切割區域Rd係鄰接之晶片區域Rchip之間之線狀區域，且係藉由切割加以切斷之區域(切割線)。FIG. 2 is a top view of the semiconductor wafer W. As shown in FIG. As shown in FIG. 2, the semiconductor wafer W includes a plurality of wafer regions Rchip to be the semiconductor wafer 1 and a plurality of dicing regions Rd to be cut in the dicing step. The semiconductor device is formed on the wafer region Rchip through a semiconductor process. Furthermore, the semiconductor element is covered with an insulating film such as a passivation film 33. For the passivation film 33, for example, polyimide is used. The cutting area Rd is a linear area between adjacent chip areas Rchip, and is an area cut by cutting (cutting line).

圖3及圖4表示出了正在照射雷射光之情形。圖3對應於沿著圖2之3-3線之剖面。於半導體基板10之第1面F1上設置有第1材料層20，於第1材料層20上設置有設備層30。本實施形態中，第1材料層20設置於整個第1面F1。設備層30包含設置於晶片區域Rchip之元件形成部31、及設置於切割區域Rd之切割部32。元件形成部31之半導體元件之圖示被省略了。於元件形成部31上，設置有鈍化膜33。於切割部32，未設置半導體元件，而設置有包含鈍化膜之絕緣膜(氧化矽膜)。Figures 3 and 4 show the situation where laser light is being irradiated. Figure 3 corresponds to the section taken along line 3-3 of Figure 2. A first material layer 20 is provided on the first surface F1 of the semiconductor substrate 10, and a device layer 30 is provided on the first material layer 20. In this embodiment, the first material layer 20 is provided on the entire first surface F1. The device layer 30 includes an element forming portion 31 provided in the wafer area Rchip, and a cutting portion 32 provided in the cutting area Rd. The illustration of the semiconductor element of the element forming portion 31 is omitted. A passivation film 33 is provided on the element forming portion 31. In the cut portion 32, no semiconductor element is provided, but an insulating film (silicon oxide film) including a passivation film is provided.

另一方面，於半導體基板10之第2面F2上，設置有第2材料層40。第2材料層40設置於整個第2面F2。於第2材料層40上，可設置氧化矽膜等絕緣膜60。絕緣膜60形成得較薄，以免對第2材料層40之雷射光之透過率造成影響。如此，於半導體基板10之第1及第2面F1、F2，設置第1及第2材料層20、40。On the other hand, a second material layer 40 is provided on the second surface F2 of the semiconductor substrate 10. The second material layer 40 is provided on the entire second surface F2. On the second material layer 40, an insulating film 60 such as a silicon oxide film can be provided. The insulating film 60 is formed thinner so as not to affect the laser light transmittance of the second material layer 40. In this way, the first and second material layers 20 and 40 are provided on the first and second surfaces F1 and F2 of the semiconductor substrate 10.

進而，於半導體晶片1，亦可設置貫通電極(TSV(Through Silicon Via，矽通孔))80。貫通電極80係自半導體基板10之第2面F2向第1面F1貫通之電極。貫通電極80係為了將配置於第2面F2側之其他半導體晶片或安裝基板(未圖示)之佈線電性連接於設備層30之半導體元件而設置。貫通電極80形成有第1及第2材料層20、40、鈍化膜33、絕緣膜60，且係於採用CMP(Chemical Mechanical Polishing，化學機械研磨)等將半導體晶圓W薄化後形成。Furthermore, a through electrode (TSV (Through Silicon Via)) 80 may also be provided on the semiconductor chip 1. The through electrode 80 is an electrode penetrating from the second surface F2 to the first surface F1 of the semiconductor substrate 10. The through electrode 80 is provided for electrically connecting the wiring of another semiconductor wafer or a mounting substrate (not shown) arranged on the second surface F2 side to the semiconductor element of the device layer 30. The through electrode 80 is formed with first and second material layers 20 and 40, a passivation film 33, and an insulating film 60, and is formed by thinning the semiconductor wafer W by CMP (Chemical Mechanical Polishing) or the like.

其次，於切割步驟中，對半導體晶圓W之表面貼附切割用保護帶(未圖示)。或，將半導體晶圓W黏接於具有黏接層之切割帶上，並以環將切割帶固定(未圖示)。Next, in the dicing step, a protective tape for dicing (not shown) is attached to the surface of the semiconductor wafer W. Or, the semiconductor wafer W is bonded to a dicing tape with an adhesive layer, and the dicing tape is fixed by a ring (not shown).

其次，如圖3及圖4所示，使用雷射振盪器120，自半導體晶圓W之第2面(背面)F2向與切割區域Rd對應之部分照射雷射光121。藉此，於半導體晶圓W之內部形成改質層50。Next, as shown in FIGS. 3 and 4, the laser oscillator 120 is used to irradiate the laser light 121 from the second surface (back surface) F2 of the semiconductor wafer W to the portion corresponding to the dicing area Rd. In this way, a modified layer 50 is formed inside the semiconductor wafer W.

雷射振盪器120例如一面朝X方向移動，一面脈衝照射雷射光121。藉此，沿著切割區域Rd於X方向上斷斷續續地形成改質層50。此種改質層50雖為斷斷續續地形成，但卻於X方向上連續而成為大致層狀。於沿著Y方向延伸之切割區域Rd中，雷射振盪器120一面朝Y方向移動，一面脈衝照射雷射光121，而於Y方向上形成改質層50。For example, the laser oscillator 120 moves in the X direction while irradiating the laser light 121 in pulses. Thereby, the modified layer 50 is formed intermittently in the X direction along the cutting area Rd. Although this modified layer 50 is formed intermittently, it is continuous in the X direction and becomes a substantially layered shape. In the cutting area Rd extending along the Y direction, the laser oscillator 120 moves toward the Y direction and pulses the laser light 121 to form the modified layer 50 in the Y direction.

由於對形成改質層50後之半導體基板10之作業，如圖5及圖6所示，以改質層50為起點之龜裂C有可能會於半導體基板10內延展。圖5及圖6係表示龜裂之延展之圖。此處，於第1及第2面F1、F2，半導體基板10由第1及第2材料層20、40加以保護。因此，龜裂C停留於半導體基板10內，而被於Z方向上以大致直線狀劈開。又，於切割區域Rd之延伸方向(X方向或Y方向)上，龜裂C亦為於半導體基板10內幾乎不蜿蜒地呈直線狀延伸。Due to the operation of the semiconductor substrate 10 after the reforming layer 50 is formed, as shown in FIGS. 5 and 6, the crack C starting from the reforming layer 50 may extend in the semiconductor substrate 10. Figures 5 and 6 are diagrams showing the extension of the cracks. Here, the semiconductor substrate 10 is protected by the first and second material layers 20 and 40 on the first and second surfaces F1 and F2. Therefore, the crack C stays in the semiconductor substrate 10 and is cleaved substantially linearly in the Z direction. In addition, in the extending direction (X-direction or Y-direction) of the cutting region Rd, the crack C also extends linearly in the semiconductor substrate 10 almost without meandering.

其次，圖7係表示擴片步驟之圖。如圖7所示，半導體晶圓W黏接於具有黏接層之切割帶136上，且切割帶136以環135固定。其次，藉由自下方利用頂推構件140頂推切割帶136，而繃拉切割帶136(使之擴片)。藉此，與切割帶136一併，半導體晶圓W亦被向外側繃拉。此時，半導體晶圓W被沿著改質層50劈開，而單片化成複數個半導體晶片。Next, FIG. 7 is a diagram showing the expansion step. As shown in FIG. 7, the semiconductor wafer W is adhered to the dicing tape 136 having an adhesive layer, and the dicing tape 136 is fixed by a ring 135. Secondly, by using the pushing member 140 to push the cutting tape 136 from below, the cutting tape 136 is stretched (expanded). Accordingly, together with the dicing tape 136, the semiconductor wafer W is also stretched outward. At this time, the semiconductor wafer W is split along the reforming layer 50 and singulated into a plurality of semiconductor wafers.

此時，如圖8及圖9所示，第1及第2材料層20、40被依照改質層50及/或龜裂C以大致直線狀於Z方向上切斷。圖8及圖9係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。又，第1及第2材料層20、40被沿著切割區域Rd於X方向或Y方向上以大致直線狀切斷。At this time, as shown in FIGS. 8 and 9, the first and second material layers 20 and 40 are cut in the Z direction substantially linearly in accordance with the modified layer 50 and/or the crack C. 8 and 9 are diagrams showing a situation where cracks are formed between semiconductor wafers due to expansion. In addition, the first and second material layers 20 and 40 are cut in a substantially linear shape in the X direction or the Y direction along the cutting area Rd.

如此，本實施形態中，藉由於半導體基板10之第1及第2面F1、F2設置第1及第2材料層20、40，而抑制來自改質層50之龜裂於擴片步驟前朝設備層30延展。再者，只要於擴片步驟前不朝設備層30延展，龜裂C即便延展至第1及第2材料層20、40之中途亦沒有關係。In this way, in this embodiment, since the first and second material layers 20, 40 are provided on the first and second surfaces F1, F2 of the semiconductor substrate 10, the cracks from the modified layer 50 are suppressed before the expansion step. The equipment layer 30 is extended. Furthermore, as long as it does not extend toward the device layer 30 before the expansion step, it does not matter even if the crack C extends halfway through the first and second material layers 20 and 40.

之後，於擴片步驟中，藉由擴片半導體晶圓，而使來自改質層50之龜裂C朝第1及第2材料層20、40、以及設備層30之切割部32延展。於擴片步驟中，以龜裂C沿著Z方向及切割區域Rd呈大致直線狀延展之方式，擴片半導體基板10。因此，龜裂C於第1及第2材料層20、40、以及設備層30之切割部32中呈大致直線狀延展。即，擴片步驟前之改質層50及龜裂C歸根到底不過是作為擴片時之分割起點而發揮功能，要藉由於擴片步驟中施加外力方會切斷至第1及第2材料層20、40。其結果，於本實施形態中，能提高來自改質層50之龜裂C之直進性，從而能抑制龜裂C出其不意地朝元件形成部31延展。After that, in the expanding step, the semiconductor wafer is expanded to expand the crack C from the modified layer 50 toward the first and second material layers 20 and 40 and the cutting portion 32 of the device layer 30. In the expanding step, the semiconductor substrate 10 is expanded in such a manner that the crack C extends along the Z direction and the cutting area Rd substantially linearly. Therefore, the crack C extends substantially linearly in the cutting portion 32 of the first and second material layers 20 and 40 and the device layer 30. In other words, the modified layer 50 and the crack C before the expansion step function as the starting point of the division during the expansion step, and the first and second materials will be cut by applying external force during the expansion step. Layer 20,40. As a result, in this embodiment, the straightness of the crack C from the modified layer 50 can be improved, and the crack C can be prevented from spreading to the element formation portion 31 unexpectedly.

(第2實施形態)  圖10係表示第2實施形態之半導體晶片之構成例之概略圖。於第2實施形態中，第1及第2材料層20、40僅設置於切割區域Rd，而未設置於晶片區域Rchip。即，於半導體基板10之第1面F1之晶片區域Rchip中，設備層30之元件形成部31設置於半導體基板10上，而其下並未設置第1材料層20。於半導體基板10之第2面F2之晶片區域Rchip中，包含鈍化膜33之絕緣膜60設置於半導體基板10上，而其下並未設置第2材料層40。換而言之，第1材料層20設置於晶片區域Rchip之元件形成部31周圍(外緣)。第2材料層40設置於晶片區域Rchip之絕緣膜60周圍(外緣)。(Second Embodiment) Fig. 10 is a schematic diagram showing a configuration example of a semiconductor wafer of the second embodiment. In the second embodiment, the first and second material layers 20 and 40 are provided only in the dicing area Rd, and are not provided in the wafer area Rchip. That is, in the wafer region Rchip on the first surface F1 of the semiconductor substrate 10, the element forming portion 31 of the device layer 30 is provided on the semiconductor substrate 10, and the first material layer 20 is not provided under it. In the wafer region Rchip on the second surface F2 of the semiconductor substrate 10, the insulating film 60 including the passivation film 33 is provided on the semiconductor substrate 10, and the second material layer 40 is not provided thereunder. In other words, the first material layer 20 is provided around (outer edge) the element formation portion 31 of the wafer region Rchip. The second material layer 40 is provided around (outer edge) the insulating film 60 in the wafer region Rchip.

如此，第1及第2材料層20、40無需設置於第1及第2面F1、F2各自之整個面上，亦可僅設置於切割區域Rd。於該情形時，第1及第2材料層20、40雖無法加強半導體基板10整體，但能至少加強切割區域Rd。因此，第2實施形態亦能獲得與第1實施形態相同之效果。In this way, the first and second material layers 20 and 40 need not be provided on the entire surfaces of the first and second surfaces F1 and F2, and may be provided only on the cutting area Rd. In this case, although the first and second material layers 20 and 40 cannot reinforce the entire semiconductor substrate 10, they can at least reinforce the cutting area Rd. Therefore, the second embodiment can also obtain the same effect as the first embodiment.

圖11至圖16係表示切割步驟之概略圖。第2實施形態亦與第1實施形態同樣地，自圖2所示之半導體晶圓W向半導體晶片1單片化。11 to 16 are schematic diagrams showing the cutting steps. In the second embodiment, similarly to the first embodiment, the semiconductor wafer W shown in FIG. 2 is singulated into the semiconductor wafer 1.

圖11及圖12係表示正在照射雷射光之情形之圖。第1及第2材料層20、40僅設置於切割區域Rd，而未設置於晶片區域Rchip。振盪器120與第1實施形態同樣地，自半導體晶圓W之第2面F2向與切割區域Rd對應之部分照射雷射光121。藉此，於半導體晶圓W之內部形成改質層50。Figures 11 and 12 are diagrams showing a situation where laser light is being irradiated. The first and second material layers 20 and 40 are only provided in the dicing area Rd, but not in the wafer area Rchip. The oscillator 120 irradiates the laser beam 121 from the second surface F2 of the semiconductor wafer W to the portion corresponding to the dicing area Rd, as in the first embodiment. In this way, a modified layer 50 is formed inside the semiconductor wafer W.

由於對形成改質層50後之半導體基板10之作業，如圖13及圖14所示，以改質層50為起點之龜裂C有可能會於半導體基板10內延展。圖13及圖14係表示龜裂之延展之圖。此處，於第1及第2面F1、F2，半導體基板10之切割區域Rd由第1及第2材料層20、40加以保護。於第1及第2面F1、F2，由第1及第2材料層20、40加以保護。第2面F2上之龜裂朝材料層40之延展可有可無。無論如何，隨之龜裂C於第1面F1，均停留於半導體基板10內，而沿著Z方向呈大致直線狀劈開。因此，龜裂C停留於半導體基板10內，而沿著大致Z方向呈直線狀劈開。又，於切割區域Rd之延伸方向(X方向或Y方向)上，龜裂C亦為幾乎不蜿蜒地呈直線狀延伸。Due to the operation of the semiconductor substrate 10 after the reforming layer 50 is formed, as shown in FIGS. 13 and 14, the crack C starting from the reforming layer 50 may extend in the semiconductor substrate 10. Figures 13 and 14 are diagrams showing the extension of the cracks. Here, on the first and second surfaces F1 and F2, the cut area Rd of the semiconductor substrate 10 is protected by the first and second material layers 20 and 40. The first and second surfaces F1 and F2 are protected by the first and second material layers 20 and 40. The extension of the cracks on the second surface F2 toward the material layer 40 is optional. In any case, along with the cracks C on the first surface F1, they all stay in the semiconductor substrate 10, and cleavage substantially linearly along the Z direction. Therefore, the crack C stays in the semiconductor substrate 10 and splits linearly along the substantially Z direction. In addition, in the extending direction (X-direction or Y-direction) of the cutting region Rd, the crack C also extends linearly with almost no meandering.

其次，如參照圖7所說明，擴片半導體晶圓W，將其單片化成複數個半導體晶片。Next, as described with reference to FIG. 7, the semiconductor wafer W is expanded and singulated into a plurality of semiconductor wafers.

此時，如圖15及圖16所示，第1及第2材料層20、40被依照改質層50及/或龜裂C以大致直線狀於Z方向上切斷。圖15及圖16係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。又，第1及第2材料層20、40被沿著切割區域Rd於X方向或Y方向上以大致直線狀切斷。At this time, as shown in FIGS. 15 and 16, the first and second material layers 20 and 40 are cut in the Z direction substantially linearly in accordance with the modified layer 50 and/or the crack C. 15 and 16 are diagrams showing a situation where cracks are formed between semiconductor wafers due to expansion. In addition, the first and second material layers 20 and 40 are cut in a substantially linear shape in the X direction or the Y direction along the cutting area Rd.

如此，即便第1及第2材料層20、40僅設置於切割區域Rd，亦能提高來自改質層50之龜裂C之直進性，從而能抑制龜裂C出其不意地朝元件形成部31延展。In this way, even if the first and second material layers 20 and 40 are provided only in the cut area Rd, the straightness of the crack C from the modified layer 50 can be improved, and the crack C can be prevented from spreading to the element formation portion 31 unexpectedly .

(變化例) 第1及第2實施形態之第1及第2材料層20、40亦可酌情組合。例如，可將第1實施形態之第1材料層20及第2實施形態之第2材料層40組合。反之，亦可將第2實施形態之第1材料層20及第1實施形態之第2材料層40組合。於此種變化例中，亦能獲得本實施形態之效果。(Variation) The first and second material layers 20 and 40 of the first and second embodiments can also be combined as appropriate. For example, the first material layer 20 of the first embodiment and the second material layer 40 of the second embodiment may be combined. Conversely, the first material layer 20 of the second embodiment and the second material layer 40 of the first embodiment may be combined. In such a modified example, the effects of this embodiment can also be obtained.

對本發明之若干個實施形態進行了說明，但該等實施形態僅作為示例而提出，並非意圖限定發明之範圍。該等實施形態能以其他各種形態加以實施，於不脫離發明主旨之範圍內，可進行各種省略、替換、變更。該等實施形態及其變化包含於發明之範圍及主旨中，同樣包含於申請專利範圍所記載之發明及其同等之範圍內。Several embodiments of the present invention have been described, but these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and their changes are included in the scope and spirit of the invention, and are also included in the invention described in the patent application and its equivalent scope.

相關申請案 本申請案基於2019年03月15日提出申請之先前之日本專利申請案第2019-048945號之優先權之利益，且要求該利益，其全部內容藉由引用而包含於此。 Related Application This application is based on the benefits of priority of the previous Japanese Patent Application No. 2019-048945 filed on March 15, 2019, and claims such benefits, the entire contents of which are incorporated herein by reference.

1:半導體晶片10:半導體基板20:第1材料層30:設備層31:元件形成部32:切割部33:鈍化膜40:第2材料層50:改質層60:絕緣膜80:貫通電極120:雷射振盪器121:雷射光135:環136:切割帶140:頂推構件F1:第1面 F2:第2面 F3:側面 C:龜裂 Rchip:晶片區域 Rd:切割區域 W:半導體晶圓1: semiconductor wafer 10: semiconductor substrate 20: first material layer 30: device layer 31: element forming part 32: cutting part 33: passivation film 40: second material layer 50: modified layer 60: insulating film 80: through electrode 120: Laser oscillator 121: Laser light 135: Ring 136: Cutting tape 140: Pushing member F1: First side F2: Side 2 F3: side C: cracked Rchip: chip area Rd: cutting area W: semiconductor wafer

圖1係表示第1實施形態之半導體晶片之構成例之概略圖。  圖2係表示切割步驟之概略圖。  圖3係表示正在照射雷射光之情形之圖。  圖4係表示正在照射雷射光之情形之圖。  圖5係表示龜裂之延展之圖。  圖6係表示龜裂之延展之圖。  圖7係表示擴片步驟之圖。  圖8係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。  圖9係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。  圖10係表示第2實施形態之半導體晶片之構成例之概略圖。  圖11係表示正在照射雷射光之情形之圖。  圖12係表示正在照射雷射光之情形之圖。  圖13係表示龜裂之延展之圖。  圖14係表示龜裂之延展之圖。  圖15係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。  圖16係表示由於擴片而於半導體晶片之間形成有龜裂之情形之圖。Fig. 1 is a schematic diagram showing a configuration example of a semiconductor wafer according to the first embodiment. Figure 2 is a schematic diagram showing the cutting steps. Figure 3 is a diagram showing a situation where laser light is being irradiated. Figure 4 is a diagram showing a situation where laser light is being irradiated. Figure 5 is a diagram showing the extension of the crack. Figure 6 is a diagram showing the extension of the crack. Figure 7 is a diagram showing the expansion steps. Fig. 8 is a diagram showing a situation where cracks are formed between the semiconductor chips due to the expansion of the chip. Fig. 9 is a diagram showing a situation where cracks are formed between the semiconductor chips due to the expansion of the chip. Fig. 10 is a schematic diagram showing a configuration example of a semiconductor chip of the second embodiment. Figure 11 is a diagram showing a situation where laser light is being irradiated. Figure 12 is a diagram showing a situation where laser light is being irradiated. Figure 13 is a diagram showing the extension of the crack. Figure 14 is a diagram showing the extension of the crack. Fig. 15 is a diagram showing a situation where cracks are formed between semiconductor chips due to the expansion of the chip. Fig. 16 is a diagram showing a situation where cracks are formed between semiconductor chips due to the expansion of the chip.

1:半導體晶片 1: Semiconductor wafer

10:半導體基板 10: Semiconductor substrate

20:第1材料層 20: The first material layer

30:設備層 30: Device layer

31:元件形成部 31: Component forming part

32:切割部 32: Cutting part

40:第2材料層 40: 2nd material layer

50:改質層 50: modified layer

F1:第1面 F1: Side 1

F2:第2面 F2: Side 2

F3:側面 F3: side

Claims (10)

一種半導體裝置，其具備： 半導體基板，其具有第1面、及相對於該第1面位於相反側之第2面； 半導體元件，其設置於上述半導體基板之上述第1面； 多晶或非晶質之第1材料層，其設置於上述半導體基板之上述第1面之至少外緣；及 第2材料層，其設置於上述半導體基板之上述第2面，可令雷射光透過。A semiconductor device including: A semiconductor substrate having a first surface and a second surface located on the opposite side with respect to the first surface; A semiconductor element, which is disposed on the first surface of the semiconductor substrate; A polycrystalline or amorphous first material layer, which is provided on at least the outer edge of the first surface of the semiconductor substrate; and The second material layer is provided on the second surface of the semiconductor substrate and can transmit laser light. 如請求項1之半導體裝置，其中 上述第1材料層亦設置於上述半導體元件與上述半導體基板之間。Such as the semiconductor device of claim 1, wherein The first material layer is also provided between the semiconductor element and the semiconductor substrate. 如請求項1之半導體裝置，其中 上述第1材料層中包含多晶矽、非晶矽、氧化矽膜、氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁、鎢、鉬中任一者。Such as the semiconductor device of claim 1, wherein The first material layer includes any one of polysilicon, amorphous silicon, silicon oxide film, silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, aluminum oxide, tungsten, and molybdenum. 如請求項2之半導體裝置，其中 上述第1材料層中包含多晶矽、非晶矽、氧化矽膜、氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁、鎢、鉬中任一者。Such as the semiconductor device of claim 2, wherein The first material layer includes any one of polysilicon, amorphous silicon, silicon oxide film, silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, aluminum oxide, tungsten, and molybdenum. 如請求項1至3中任一項之半導體裝置，其中 上述第2材料層可令800 nm至2500 nm波長之雷射光透過。Such as the semiconductor device of any one of claims 1 to 3, wherein The above-mentioned second material layer can transmit laser light with a wavelength of 800 nm to 2500 nm. 如請求項1至3中任一項之半導體裝置，其中 上述第2材料層之楊氏模數較上述半導體基板高。Such as the semiconductor device of any one of claims 1 to 3, wherein The Young's modulus of the second material layer is higher than that of the semiconductor substrate. 如請求項1至3中任一項之半導體裝置，其中 上述第2材料層中包含氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁中任一者。Such as the semiconductor device of any one of claims 1 to 3, wherein The second material layer includes any one of silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, and aluminum oxide. 如請求項1至3中任一項之半導體裝置，其中 在上述半導體基板之位於上述第1面與上述第2面之間之側面，僅設置有一層藉由上述雷射光所形成之改質層。Such as the semiconductor device of any one of claims 1 to 3, wherein On the side surface of the semiconductor substrate located between the first surface and the second surface, only one modified layer formed by the laser light is provided. 如請求項1之半導體裝置，其中 上述第1材料層於特定方向上不具有結晶方位。Such as the semiconductor device of claim 1, wherein The first material layer does not have a crystal orientation in a specific direction. 一種半導體裝置，其具備： 半導體基板，其具有第1面、及相對於該第1面位於相反側之第2面； 半導體元件，其設置於上述半導體基板之上述第1面； 第1材料層，其設置於上述半導體基板之上述第1面之至少外緣，且包含多晶矽、非晶矽、氧化矽膜、氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁、鎢、鉬，為多晶或於特定方向上不具有結晶方位之非晶質；及 第2材料層，其設置於上述半導體基板之上述第2面，可令800 nm至2500 nm波長之雷射光透過，且包含氮化矽膜、類鑽碳、氧化釔、氧化鋯、氧化鋁中任一者；且 在上述半導體基板之位於上述第1面與上述第2面之間之側面，與上述第1及第2面之外緣大致平行地僅設置有一層藉由上述雷射光所形成之改質層。A semiconductor device including: A semiconductor substrate having a first surface and a second surface located on the opposite side with respect to the first surface; A semiconductor element, which is disposed on the first surface of the semiconductor substrate; The first material layer is provided on at least the outer edge of the first surface of the semiconductor substrate and includes polysilicon, amorphous silicon, silicon oxide film, silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, and aluminum oxide , Tungsten, molybdenum, which are polycrystalline or amorphous with no crystalline orientation in a specific direction; and The second material layer, which is disposed on the second surface of the semiconductor substrate, can transmit laser light with a wavelength of 800 nm to 2500 nm, and includes silicon nitride film, diamond-like carbon, yttrium oxide, zirconium oxide, and aluminum oxide. Either; and On the side surface of the semiconductor substrate located between the first surface and the second surface, only one modified layer formed by the laser light is provided substantially parallel to the outer edges of the first and second surfaces.
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