TW201802870A - Substrate treating device and substrate treating method - Google Patents

Abstract

According to the embodiment, a substrate treating device 1 that rotates and washes a substrate, the device includes a spinning holding mechanism for holding a substrate, a treatment liquid supply nozzle for supplying a treatment liquid to the substrate, a shielding plate that is arranged opposite to the substrate held by the spinning holding mechanism and that moves in a contact/separate direction with respect to the substrate, a shielding plate rotating mechanism for rotating the shielding plate, and a control device for controlling the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from a standby position when the treatment liquid is supplied from the treatment liquid supply nozzle. It is possible to prevent contamination of a substrate during the treatment process.

Description

Substrate processing device and substrate processing method

Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.

For example, the substrate processing apparatus performs a film forming process or a photolithography process for forming a circuit pattern on a substrate such as a wafer or a liquid crystal panel in a manufacturing step of a semiconductor or the like. Among these procedures, a wet process mainly using a processing liquid is a substrate processing apparatus using a leaf-type substrate to perform chemical processing, cleaning processing, drying processing, etc. (for example, refer to Japanese Patent Laid-Open Publication No. 2000-133625). The leaflet type substrate processing device rotates the substrate by holding the outer peripheral surface of the substrate, using an axis orthogonal to the surface of the substrate as a rotation axis, and supplying a processing liquid (such as an etching solution, a cleaning solution, and pure water) to the rotating The surface of the substrate.

The substrate processing apparatus supplies the processing liquid to the surface of the substrate, and then supplies the gas to the surface of the substrate with the rotation of the substrate and performs a drying process. In this drying process, a shielding plate arranged opposite to the substrate and having a size sufficient to cover the entire substrate is brought closer to the surface of the substrate, and a gas is supplied to a space formed between the substrate and the shielding plate.

In such a device, when the processing liquid is supplied from the surface of the substrate for processing, the shielding plate is positioned near the substrate.

In other words, the processing liquid supplied to the surface of the substrate may cause a liquid splash on the surface of the substrate. If this occurs, the spattered processing liquid will adhere to the surface of the shielding plate that is close to the substrate and faces the substrate. If the shielding plate to which the processing liquid is attached is used in a drying process, the processing liquid adhering to the shielding plate will fall toward the surface of the substrate and cause a water mark. The aforementioned patent literature does not recognize this subject.

An object of the present invention is to allow good processing of a substrate using a processing liquid.

The substrate processing apparatus related to the embodiment is a substrate processing apparatus that rotates the substrate and performs cleaning processing, and includes a shaft rotation holding mechanism to hold the substrate, a processing liquid supply nozzle to supply the processing liquid toward the substrate, and a shielding plate and the shaft. The substrate held by the rotation holding mechanism is oppositely disposed and moved in a direction close to the substrate; the shielding plate rotating mechanism rotates the shielding plate; and the control device positions the shielding plate to the position when the processing liquid is not supplied. In the standby position, the supply of the processing liquid from the processing liquid supply nozzle is to control the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from the standby position.

The substrate processing apparatus related to the embodiment is a substrate processing apparatus that rotates the substrate and performs cleaning processing, and includes a shaft rotation holding mechanism to hold the substrate, a processing liquid supply nozzle to supply the processing liquid toward the substrate, and a shielding plate and the shaft. The substrate held by the rotation holding mechanism is arranged oppositely and moves in a direction close to the substrate; the shielding plate rotating mechanism rotates the shielding plate; the back nozzle head supplies the processing liquid and gas to the back of the substrate, respectively; and Control device; the control device controls the shielding plate to a standby position when the first set number of sheets is set in advance, when the processing liquid is not supplied, and the processing liquid is supplied from the processing liquid supply nozzle to the processing liquid. The shielding plate rotating mechanism rotates the shielding plate without moving the shielding plate from the standby position. When the second set number of sheets is reached in advance, the shielding plate rotation mechanism is controlled to take out the substrate after the substrate is removed from the processing chamber. Supplying the treatment liquid and the gas from the back nozzle head to the shielding plate, When the sheet reaches the number of the third setting set in advance, the control to be unloaded after the substrate from the processing chamber by the treatment liquid supplying process liquid to the supply nozzle peripheral edge of the shielding plate.

The substrate processing method related to the embodiment is a substrate processing step in which the substrate is rotated and cleaned. The substrate processing step includes: a substrate holding step to hold the substrate; a processing liquid supply step to supply the processing liquid from the processing liquid supply nozzle to the substrate; The shielding plate moving step moves the shielding plate arranged opposite to the substrate held by the substrate holding step, and moves the shielding plate closer to and away from the substrate; and the shielding plate rotating step, when the processing liquid is not supplied, causes the foregoing The shielding plate is positioned at the standby position, and the supply of the processing liquid from the processing liquid supply nozzle is to rotate the shielding plate without moving the shielding plate from the standby position.

According to the embodiment of the present invention, the substrate to which the processing liquid is applied can be favorably processed.

[First Embodiment] A first embodiment will be described with reference to Figs. 1 to 4.

As shown in FIG. 1, the substrate processing apparatus 1 according to the first embodiment includes a substrate storage box 2, a mounting table 3, a transfer robot 4, a transfer guide 5, a buffer table 6, a transfer robot 7, a transfer guide 8, and a processing chamber 9. Supplied with unit 10.

The substrate storage box 2 is a container that stores a substrate W (for example, a semiconductor wafer). In this substrate storage box 2, substrates W are stacked and stored one by one at predetermined intervals.

The mounting table 3 is a table on which the substrate storage box 2 is placed. As shown in FIG. 1, a plurality of substrate storage boxes 2 may be arranged in a row at a predetermined interval.

The transfer robot 4 is provided beside the row of the substrate storage boxes 2 and can move along a first transfer direction (direction of arrow A shown in FIG. 1) in which the plurality of substrate storage boxes 2 are arranged. This transfer robot 4 takes out the unprocessed substrate W stored in the substrate storage box 2. Then, the transfer robot 4 moves in the direction of the arrow A as needed, stops near the buffer stage 6, rotates at the stop, and transfers the substrate W to the buffer stage 6. In addition, the transfer robot 4 takes out the processed substrate W from the buffer table 6, moves it in the direction of arrow A as needed, and transfers it to the intended substrate storage box 2. Incidentally, the transfer robot 4 may be configured to transfer the unprocessed substrate W to the buffer table 6 only by turning, or to transfer the processed substrate W to the intended substrate storage box 2. As the transfer robot, for example, a known robot having a robot arm, a robot hand, a moving mechanism, or the like can be used.

The transport rail 5 is a mechanism that moves the transport robot 4 in the direction of the arrow A. Accordingly, the transfer robot 4 can be moved to transfer the substrate W between the substrate storage boxes 2 and the buffer stage 6. The conveyance guide 5 is, for example, an LM guide (Linear Motion Guide).

The buffer table 6 is provided near the center of the transport guide 5 that the transport robot 4 moves, and is located on the opposite side from the mounting table 3. The buffer table 6 is a mounting table for exchanging the substrate W between the transfer robot 4 and the transfer robot 7.

The transfer robot 7 is provided so as to be able to move from the buffer table 6 in a second transfer direction (direction of arrow B shown in FIG. 1) orthogonal to the transfer direction (direction of arrow A) of the transfer robot 4. This transfer robot 7 takes out the substrate W placed on the buffer table 6 and moves in the direction of arrow B as needed, stops near the destination processing chamber 9 and rotates at the stop to transfer the substrate W to the destination processing chamber. 9. In addition, the transfer robot 7 takes out the processed substrate W from the processing chamber 9 and moves in the direction of the arrow B as needed, stops near the buffer table 6, rotates at the stop, and transfers the processed substrate W to the buffer table 6. The transport robot 7 may be, for example, a known robot having a robot arm, a robot hand, a moving mechanism, and the like.

The transport rail 8 is a mechanism that moves the transport robot 7 in the direction of arrow B. With this mechanism, the transfer robot 7 can be moved, and the substrate W can be transferred between the processing chambers 9 and the buffer stage 6. The conveyance guide 8 is, for example, an LM guide (Linear Motion Guide).

The processing chambers 9 are provided on both sides of the conveyance guide rail 8 that the conveyance robot 7 moves, for example, two are provided respectively. In the present embodiment, the processing chamber 9 supplies a processing liquid to the substrate W carried by the transfer robot 7 and performs a cleaning process on the substrate W. In addition, a drying process is performed to dry the substrate W that has completed the cleaning process. The details are described later.

The auxiliary unit 10 is provided at one end of the conveyance guide 8 and on the opposite side from the buffer stage 6, that is, at the end of the substrate processing apparatus 1. This auxiliary unit 10 contains a gas-liquid supply unit 10a and a control unit (control device) 10b. This gas-liquid supply unit 10 a supplies various processing liquids (for example, pure water or APM: a mixed liquid of ammonia water and hydrogen peroxide, IPA: isopropyl alcohol) or a gas (for example, nitrogen) to each processing chamber 9. The control unit 10b includes a microcomputer that collectively controls each unit, and a memory unit (not shown) that stores substrate processing information related to substrate processing or various programs. This control unit 10b controls each unit such as the transfer robot 4, the transfer robot 7, and each processing chamber 9 based on the substrate processing information and various programs.

Next, the configuration in the processing chamber 9 will be described with reference to FIGS. 2 and 3.

As shown in FIG. 2, the processing chamber 9 includes a rotation holding mechanism 21, a cup body 30, a rear nozzle head 40, a first nozzle 52, a first nozzle moving mechanism 53, a second nozzle 54, a second nozzle moving mechanism 55, and a shield. Agency 60. The rotation holding mechanism 21, the cup body 30, the back nozzle head 40, the first nozzle 52, the first nozzle moving mechanism 53, the second nozzle 54, the second nozzle moving mechanism 55, and the shielding mechanism 60 are provided in the processing chamber 9.

The processing chamber 9 has a rectangular parallelepiped shape, for example, and has a shutter (not shown). This shutter is formed so that the wall surface of the processing chamber 9 located on the side of the conveyance rail 8 may be opened and closed. The shutter is opened and closed when the substrate W is carried into or removed from the processing chamber 9. Incidentally, the inside of the processing chamber 9 is kept clean by downflow (vertical laminar flow).

The shaft rotation holding mechanism 21 is a mechanism for holding the substrate W in a horizontal state and rotating the substrate W with a center axis R perpendicular to the processing surface of the substrate W as a rotation center. The shaft rotation holding mechanism 21 includes a rotating body 22 as a base. In the circumferential direction of the rotating body 22, six support pins 23 are formed at predetermined intervals, for example, at 60-degree intervals. The support pin 23 is in contact with the end surface of the substrate W, so that the substrate W is kept horizontal in the cup 30. The shaft rotation holding mechanism 21 includes a rotation mechanism 24 under the rotating body 22 and includes a rotation shaft, a motor, and the like. With this rotation mechanism 24, the shaft rotation holding mechanism 21 can rotate the substrate W while maintaining the horizontal state. Incidentally, the shaft rotation holding mechanism 21 is electrically connected to the control unit 10b. The control unit 10b controls the holding and rotation of the substrate W by the shaft rotation holding mechanism 21.

The cup body 30 has three upper cups 30a, 30b, 30c, three lower cups 31a, 31b, 31c, and a bottom 33. The upper cups 30a to 30c and the lower cups 31a to 31c are formed in a cylindrical shape so as to surround the substrate W held by the shaft rotation holding mechanism 21 from the surroundings. The upper part of the cup body 30, that is, the upper cups 30a to 30c is opened so that the entire surface (upper surface) of the substrate W held by the shaft rotation holding mechanism 21 is exposed. tilt.

The upper cup 30 a and the lower cup 31 a are arranged on the outer periphery of the pivot holding mechanism 21. The upper cup 30b and the lower cup 31b are arranged outside the upper cup 30a and the lower cup 31a. The upper cup 30c and the lower cup 31c are arranged on the outer periphery of the upper cup 30b and the lower cup 31b.

The lower cups 31a to 31c are formed by being fixed vertically to the bottom 33, and can be slidably inserted between the peripheral walls of the double-layer structure formed corresponding to the lower portions of the upper cups 30a to 30c, respectively, and become a lost structure. The upper cups 30a to 30c can be individually driven up and down by an upper and lower driving mechanism (not shown). In the bottom 33, a discharge port 32a is formed in the area surrounded by the lower cup 31a, and a discharge port 32b is formed in the area surrounded by the lower cup 31a and the lower cup 31b, and is surrounded by the lower cup 31b and the lower cup 31c. A discharge port 32c is formed in the residential area. Each of the discharge ports 32a to 32c is connected to an exhaust pump (not shown) through a discharge pipe, a liquid discharge tank, and a gas-liquid separator. Thereby, the processing liquid scattered from the substrate W can be separated and recovered through each of the discharge ports 32a to 32c. Incidentally, the up and down driving mechanism is electrically connected to the control unit 10b. The upper and lower cups 30a to 30c are controlled by the control unit 10b.

The rear nozzle head 40 is supported in a fixed state at the upper end of the fixed shaft 41. The fixed shaft 41 penetrates the rotation mechanism 24 in a non-contact manner, and is fixed to a bottom portion 33 in the processing chamber 9. The rear nozzle head 40 supported at the upper end of the fixed shaft 41 has a gap with the rotating body 22. Accordingly, although the rear nozzle head 40 is in a fixed state, it does not rotate with the rotating body 22. The back nozzle head 40 projects to the upper surface side of the rotating body 22, and an annular wall 42 is formed at a position corresponding to the outer peripheral portion of the back nozzle head 40 on the upper surface of the rotating body 22. On the other hand, the outer peripheral portion of the rear nozzle head 40 is opened on the lower surface to form an annular groove 43 that can accommodate the annular wall 42 inside. That is, the annular wall 42 and the annular groove 43 form a labyrinth structure, and can prevent the processing liquid scattered on the upper surface side of the rotating body 22 from flowing out of the cup body 30 along the fixed shaft 41.

As shown in FIG. 2, the back nozzle head 40 is formed with a recessed portion 44 that opens the top surface. The recessed portion 44 is formed in a conical shape and gradually decreases in diameter as it goes from the upper part to the lower part. A peripheral surface of the concave portion 44 on the upper surface of the back nozzle head 40 is formed with an inclined surface 45 which is inclined downward toward the outside in the radial direction.

The bottom of the recessed portion 44 has an opening, which is one end of a liquid discharge port 46 forming a liquid discharge portion. The liquid discharge port 46 is used to discharge the processing liquid which is sprayed onto the back surface of the substrate W, is reflected on the substrate W, and is dropped onto the inner surface of the recess 44. The other end of the drain port 46 is connected to one end of a drain pipe 47. Although not shown, the other end of the liquid discharge pipe 47 is connected to the exhaust pump through a gas-liquid separator similarly to each of the discharge ports 32a to 32c.

A lower processing liquid nozzle 48 and a lower gas nozzle 50 are formed on the surface of the recessed portion 44. The lower processing liquid nozzle 48 is connected to one end of the processing liquid supply pipe 49, and the lower gas nozzle 50 is connected to one end of the gas supply pipe 51. The other ends of the processing liquid supply pipe 49 and the gas supply pipe 51 are connected to the gas-liquid supply unit 10a, respectively. Incidentally, a plurality of lower processing liquid nozzles 48 and lower gas nozzles 50 may be provided on the surface of the recessed portion 44 at predetermined intervals. In this embodiment, two lower processing liquid nozzles 48 and two lower gas nozzles 50 are formed at intervals of approximately 90 degrees in the circumferential direction of the recessed portion 44.

The processing liquid S (for example, APM) or the processing liquid L (for example, pure water) supplied through the processing liquid supply pipe 49 is sprayed from the lower processing liquid nozzle 48 toward the back surface of the substrate W held by the pivot holding mechanism 21. The gas G (for example, nitrogen) supplied through the gas supply pipe 51 is sprayed from the lower gas nozzle 50 toward the rear surface of the substrate.

The spraying directions of the lower processing liquid nozzle 48 and the lower gas nozzle 50 are inclined at a predetermined angle with respect to the central axis R, and the processing liquids S, L, and G are sprayed toward a slight rotation center of the substrate W held by the shaft rotation holding mechanism 21.

The processing liquids S and L supplied to the rotating substrate W are distributed substantially on the back surface of the substrate W by centrifugal force, and almost all of the processing liquid rebounded on the substrate W is dropped into the recess 44. In addition, like the processing liquids S and L, the gas G acts on the entire back surface of the substrate W.

The processing liquids S and L may be ejected to a position shifted from the rotation center of the substrate W. Similarly, the gas G may be ejected to a position shifted from the rotation center of the substrate W. The supply of the processing liquids S, L, and gas G is controlled by the control unit 10b.

The first nozzle 52 supplies a processing liquid L (for example, pure water) to the surface of the substrate W held by the rotation holding mechanism 21. The first nozzle 52 is capable of swinging along the surface of the substrate W held by the shaft rotation holding mechanism 21 by the first nozzle moving mechanism 53. The treatment liquid L is supplied from the gas-liquid supply unit 10 a to a first nozzle 52 through a pipe (not shown).

The first nozzle moving mechanism 53 is configured by a rotating shaft, a motor, and the like. For example, the first nozzle moving mechanism 53 moves the first nozzle 52 to a liquid supply position and a retreat position. The liquid supply position is a position opposed to the vicinity of the center of the surface of the substrate W held by the rotation holding mechanism 21, and the retreat position is a position where the substrate W can be carried in or out by being withdrawn from the liquid supply position, and the substrate W can be dried. .

The second nozzle 54 is a spray nozzle. The second nozzle 54 supplies a mist-like processing liquid S to the surface of the substrate W held by the rotation holding mechanism 21. The second nozzle 54 is capable of swinging along the surface of the substrate W held by the rotation holding mechanism 21 by the second nozzle moving mechanism 55. The treatment liquid S is supplied from the gas-liquid supply unit 10 a to a second nozzle 54 through a pipe (not shown).

Like the first nozzle moving mechanism 53, the second nozzle moving mechanism 55 is configured by a rotating shaft, a motor, and the like. For example, the second nozzle moving mechanism 55 moves the second nozzle 54 to the liquid supply position and the retreat position. The first nozzle moving mechanism 53 and the second nozzle moving mechanism 55 are electrically connected to the control unit 10b. The control unit 10b controls the movement of each nozzle and the supply operation of the processing liquid.

As shown in FIGS. 2 and 3, the shielding mechanism 60 includes a shielding plate elevating mechanism 61, an arm 62, a shielding plate 63, a shielding plate rotation mechanism 64, and a shielding plate holding mechanism 65.

The shielding plate elevating mechanism 61 includes a rotating member 61 a having a direction orthogonal to the central axis R (a direction orthogonal to the paper surface) as an axis. One end of the arm 62 is fixed to the rotation member 61a. When the shielding plate elevating mechanism 61 rotates the rotating member 61 a within a predetermined angular range, the arm 62 performs an arc movement using the rotating member 61 a as an axis. The shielding plate elevating mechanism 61 moves the arm 62 in an approaching and separating direction (up and down direction) by moving the arm 62 in a circular motion as described later.

The other end of the arm 62 is connected to the shielding plate holding mechanism 65 through a connecting pin 65a. The connecting pin 65a is provided in a direction orthogonal to the central axis R similarly to the rotating member 61a described above. Incidentally, the connecting portion of the connecting pin 65a and the arm 62, and the connecting portion of the connecting pin 65a and the shielding plate holding mechanism 65 each have a rotation bearing (not shown), and the arm 62 is made by the operation of the shielding plate lifting mechanism 61. When shaking, the shielding plate 63 moves up and down while maintaining a horizontal state.

As shown in FIG. 3, the shielding plate 63 is a disc-shaped member, and has a circular nozzle opening 63 a with a central axis Q as an axis in the center. The diameter of the shielding plate 63 is, for example, approximately the same diameter as that of the substrate W. Incidentally, although it may be slightly larger than the size of the substrate W, in this embodiment, the diameter of the shielding plate 63 is slightly smaller than the diameter of the substrate W. This is to prevent the shielding plate 63 from interfering with the support pin 23 when the distance between the shielding plate 63 and the substrate W is narrow. The shielding plate 63 is fixed to a connection plate 64d located at an end portion below the shielding plate rotating mechanism 64 by a screw (not shown).

The shielding plate rotating mechanism 64 includes a rotating body 64a, a body 64b, a motor portion 64c, and a connection plate 64d. A gas supply nozzle 73 having a circular cross section is formed inside the rotating body 64a and the main body 64b with the central axis Q as a center. One end of the gas supply nozzle 73 is in communication with the nozzle opening 63a. A gas supply port 70 is provided on the side wall side of the body 64b, and is connected to one end of the gas introduction path 71. The other end of the gas introduction path 71 is connected to a gas supply nozzle 73. When a gas G is supplied from the gas supply port 70, the gas G is supplied to the substrate W from the nozzle opening 63a. In addition, inside the gas supply nozzle 73, a processing liquid supply nozzle 67 that sprays a processing liquid P (for example, IPA: isopropyl alcohol) toward the surface of the substrate W is formed along the central axis Q. One end of the processing liquid supply nozzle 67 penetrates the shielding plate holding mechanism 65 and is connected to the processing liquid introduction portion 66. The other end of the processing liquid supply nozzle 67 forms a nozzle discharge port 68. The nozzle discharge port 68 is located at the center of the nozzle opening 63a. In addition, similar to the gas supply nozzle 73 and the nozzle opening 63a, the processing liquid supply nozzle 67 has a central axis Q as an axis and has a circular cross section. The rotating body 64a has a convex shape at the upper portion, and an opening portion 64f is provided in the center. The lower portion of the main body 64b is formed in a concave shape corresponding to the convex shape, and a gap is formed between the facing surfaces of the convex portion and the concave portion. A central portion of the main body 64 b is provided with a protruding portion 64 g formed so as to surround the gas supply nozzle 73. The protruding portion 64g is an insertion opening portion 64f. A gap is formed between the inner peripheral surface of the opening portion 64f and the outer peripheral surface of the protruding portion 64g. A bearing 64e is provided in the gap, and the rotating body 64a is supported by the body 64b in a non-contact manner. The bearing 64e is, for example, a rotary bearing.

The motor portion 64c is a gap provided between the inner peripheral surface of the opening portion 64f and the outer peripheral surface of the protruding portion 64g. For example, a plurality of coils 64h corresponding to the stator of the motor portion 64c are fixed and provided on the outer peripheral surface of the protruding portion 64g, and a permanent magnet 64i corresponding to the rotor of the motor portion 64c is fixed and provided on the inner periphery of the opening portion 64f. surface. The permanent magnet 64i is ring-shaped so that the polarity is reversed at every predetermined angle, and is arranged to face the coil 64h. Therefore, after the current flows into the coil 64h, the rotating body 64a and the shielding plate 63 rotate integrally with the permanent magnet 64i with the central axis Q as an axis.

The shield holding mechanism 65 is a member that connects the arm 62 and the main body 64b, and is fixedly provided on the upper portion of the main body 64b. A hole (not shown) through which the connecting pin 65a can be inserted is provided in the center of the shielding plate holding mechanism 65.

A processing liquid introduction portion 66 is provided above the shielding plate holding mechanism 65. One end of the processing liquid introduction portion 66 is connected to a processing liquid supply nozzle 67 that penetrates the inside of the shielding plate holding mechanism 65. The other end of the processing liquid introduction portion 66 is connected to a supply pipe (not shown) that supplies the processing liquid P from the gas-liquid supply unit 10a. The shielding plate lifting mechanism 61 and the shielding plate rotating mechanism 64 are electrically connected to the control unit 10b. The control unit 10b controls the elevation and rotation of the shielding plate 63.

Next, a substrate processing operation will be described. First, the substrate W is taken out from the substrate storage box 2 by the transfer robot 4. The conveyance robot 4 moves along the conveyance guide 5 as needed, and rotates at a stop to carry the substrate W into the buffer table 6. Alternatively, the conveyance robot 4 does not move along the conveyance guide 5, and only moves the substrate W into the buffer table 6 by turning. Thereafter, the substrate W carried into the buffer stage 6 is taken out by the carrying robot 7. The transfer robot 7 moves to the vicinity of the destination processing chamber 9 along the transfer guide 8 as necessary, and rotates at a stop to carry the substrate W into the destination processing chamber 9. Alternatively, the conveyance robot 7 does not move along the conveyance guide rail 8, and only enters the intended processing chamber 9 by turning. At this time, the gate of the processing chamber 9 is opened.

The substrate W carried into the processing chamber 9 is held by the rotation holding mechanism 21. At this time, as shown in FIG. 4 (a), the upper cups 30a to 30c are in a lowered state. In addition, the shielding plate 63 of the shielding mechanism 60 is positioned at the standby position (the position shown by the symbol T1 in FIG. 4). As shown in FIG. 4 (a), this standby position is located above the rotation holding mechanism 21, and does not prevent the substrate W from being carried in when the transfer robot 7 carries the substrate W into the processing chamber 9.

Thereafter, the transfer robot 7 retreats from the processing chamber 9 and closes the shutter.

Next, as shown in FIG. 4 (b), the upper cup 30b and the upper cup 30c are raised by the vertical driving mechanism. The substrate W held by the shaft rotation holding mechanism 21 is rotated at a low speed (for example, 500 rpm) by the rotation mechanism 24. Simultaneously with the rotation of the substrate W, the first nozzle 52 is moved to the center of the substrate W by the first nozzle moving mechanism 53.

The gas G is supplied from the gas supply port 70, and the gas G is injected from the gas supply nozzle 73. As will be described later, the reason for implementing this gas G is to prevent the processing liquid L or the processing liquid S supplied to the surface of the substrate W from entering the nozzle opening 63a and the nozzle discharge port 68 due to liquid splashing on the surface of the substrate W. Incidentally, regarding the amount of gas sprayed, for example, about 50 liters per minute. In addition, as described later, the supply of the gas G from the gas supply nozzle 73 in this state is continued until a moment before FIG. 4 (g), that is, a moment before the shielding plate 63 is positioned at the drying processing position T3.

Next, the processing liquid L is supplied from the first nozzle 52 toward the center of the surface of the substrate W. Thereby, the particles adhering to the surface of the substrate W are removed. This processing liquid L is diffused to the outer periphery of the substrate W by the centrifugal force of the rotating substrate W, and is scattered from the outer periphery of the substrate W. The processing liquid L scattered from the substrate W collides with the inner peripheral surface of the rising upper cup 30b, and flows down the discharge port 32b along the inner peripheral surface. The downstream processing liquid L is recovered through a discharge pipe connected to the discharge port 32b.

In addition, when the processing liquid L is supplied to the surface of the substrate W, the shielding plate 63 of the shielding mechanism 60 is still positioned at the standby position T1, and the shielding plate 63 is rotated by the shielding plate rotation mechanism 64. The number of rotations of the shielding plate 63 is a fixed number of rotations (for example, 500 rpm). The rotation direction is the same as that of the substrate W. By the rotation of the shielding plate 63, the centrifugal force can be used to remove the droplets of the processing liquid L attached to the surface of the shielding plate 63 facing the substrate W due to the liquid splash of the processing liquid L on the surface of the substrate W and removing it. . By removing the droplets of the processing liquid L attached to the surface of the shielding plate 63 facing the substrate W, it is possible to prevent the droplets of the processing liquid L from falling from the shielding plate 63 to the surface of the substrate W. In addition, if the droplets of the processing liquid L attached to the surface of the shielding plate 63 facing the substrate W are ignored, the droplets may solidify and become particles, so this situation can be prevented.

In addition, while the processing liquid L is supplied from the first nozzle 52 to the surface of the substrate W, the processing liquid L is supplied from the lower processing liquid nozzle 48 to the rear surface of the substrate W. Thereby, the particles adhering to the back surface of the substrate W are removed. The processing liquid L supplied to the back surface of the substrate W is diffused toward the outer periphery of the substrate W, and is scattered from the outer periphery of the back surface of the substrate W. The processing liquid L scattered from the outer periphery of the back surface of the substrate W collides with the inner peripheral surface of the rising upper cup 30b, and flows down the discharge port 32b along the inner peripheral surface. The dropped treatment liquid L is recovered through a discharge pipe connected to the discharge port 32b. Incidentally, the supply time of the processing liquid L is a time set in advance, and in this embodiment, it is, for example, 10 seconds.

After the preset time has elapsed, the supply of the processing liquid L from the first nozzle 52 and the lower processing liquid nozzle 48 is stopped. The first nozzle moving mechanism 53 moves the first nozzle 52 to the retracted position.

Next, as shown in FIG. 4 (c), the upper cup 30c is maintained in a raised state, and the upper cup 30b is lowered by the vertical driving mechanism. The second nozzle moving mechanism 55 moves the second nozzle 54 to the vicinity of the center of the substrate W. Then, while the misted processing liquid S is supplied from the second nozzle 54 toward the surface of the substrate W, the second nozzle moving mechanism 55 is used to position the second nozzle 54 between the center of the substrate W and the outer periphery of the substrate W. Back and forth and shake. In addition, while the misted processing liquid S is supplied to the surface of the substrate W, the processing liquid S is supplied from the lower processing liquid nozzle 48 to the rear surface of the substrate W. Incidentally, the processing liquid S in a liquid state is supplied from the lower processing liquid nozzle 48. With this processing liquid S, particles containing oxides attached to the substrate W are removed. Incidentally, the supply of the processing liquid S here is a time set in advance, and in this embodiment, it is, for example, 30 seconds.

The shielding plate 63 is also rotated at the standby position T1 when the processing liquid S is supplied to the surface of the substrate W. Thereby, the droplets of the processing liquid S adhered to the surface of the shielding plate 63 facing the substrate W due to splashing of the liquid of the processing liquid S supplied to the surface of the substrate W can be removed by centrifugal force. This can prevent the droplets of the processing liquid S from falling from the surface of the shielding plate 63 facing the substrate W toward the surface of the substrate W. In addition, if the droplets of the processing liquid S attached to the surface of the shielding plate 63 facing the substrate W are ignored, the droplets may be solidified and become the cause of the particles, so this situation can be prevented.

The mist-like processing liquid S supplied to the substrate W is scattered from the periphery of the substrate W due to the rotation of the substrate W. The scattered mist-like treatment liquid S collides with the inner peripheral surface of the rising upper cup 30c, and drops along the inner peripheral surface toward the discharge port 32c. The dropped mist-like treatment liquid S is recovered through the discharge port 32c. In addition, the processing liquid S supplied to the back surface of the substrate W is also scattered from the periphery of the back surface of the substrate W, and the cup 30c is collected on the rise.

After a predetermined time has elapsed, the supply of the misted processing liquid S from the second nozzle 54 and the supply of the processing liquid S from the lower processing liquid nozzle 48 are stopped. Then, the second nozzle 54 is moved to the retracted position by the second nozzle moving mechanism 55.

As shown in FIG. 4 (d), the upper cup 30b is lowered in the same manner as in the process of FIG. 4 (c), and the upper cup 30c is in a raised state. The first nozzle moving mechanism 53 moves the first nozzle 52 from the retracted position toward the center of the substrate W. In addition, the rotation speed of the substrate W is high-speed (for example, 1000 rpm) rotation. Then, while the processing liquid L is supplied from the first nozzle 52 toward the center of the surface of the substrate W, the processing liquid L is supplied from the lower processing liquid nozzle 48 to the rear surface of the substrate W. Thus, the processing liquid L is used to flow away the mist-shaped processing liquid S attached to the surface of the substrate W subjected to the processing in the previous step and the processing liquid S attached to the back surface of the substrate W. In addition, by increasing the rotation speed of the substrate W, the discharge of the processing liquid S can be improved.

The processing liquid L is scattered from the outer periphery of the surface of the substrate W and the outer periphery of the back surface of the substrate W, collides with the inner peripheral surface of the upper cup 30c, and drops to the discharge port 32c along the inner peripheral surface. Then, it is recovered through a discharge pipe.

In addition, the rotation of the shielding plate 63 also continues at the standby position T1, and the processing liquid L attached to the surface of the shielding plate 63 facing the substrate W due to splashing of the processing liquid L supplied to the surface of the substrate W can be removed. This can prevent the droplets of the processing liquid L from falling from the shielding plate 63 toward the surface of the substrate W. In addition, if the droplets of the processing liquid L attached to the surface of the shielding plate 63 facing the substrate W are ignored, the droplets may solidify and become particles, so this situation can be prevented.

Incidentally, the supply time of the processing liquid L is a time set in advance, and is 10 seconds in this embodiment.

Next, after a predetermined time has elapsed, the supply of the processing liquid L from the first nozzle 52 and the lower processing liquid nozzle 48 is stopped. Then, the first nozzle 52 is moved to the retracted position by the first nozzle moving mechanism 53.

As shown in FIG. 4 (e), the upper cups 30a to 30b are raised by the up-and-down driving mechanism, and the rotation speed of the substrate W is rotated at a low speed (for example, 10 rpm). Then, the shielding plate 63 is lowered to the processing liquid supply position (the position indicated by the symbol T2 in FIG. 4 (f)) by the shielding plate elevating mechanism 61 to approach the substrate W. Following this fall, the processing liquid P is supplied from the processing liquid supply nozzle 67 toward the surface of the substrate W. The supply of the processing liquid P may be started at the same time as the lowering of the shielding plate 63 as shown in FIG. 4 (f), or may be started at the middle of the lowering.

Next, the lowering of the shielding mechanism 60 is completed (FIG. 4 (f)). Incidentally, the supply of the processing liquid P may be continued after the shielding mechanism 60 is positioned to the processing liquid supply position T2 within a preset time (for example, 3 seconds). The processing liquid supply position T2 is a position where the distance from the surface of the substrate W to the shielding plate 63 is such that even if the processing liquid P supplied from the processing liquid supply nozzle 67 rebounds on the surface of the substrate W, it will not exceed the cup. The distance to which the body 30 is scattered. Incidentally, while the processing liquid P is being supplied, the supply of the gas G from the gas supply nozzle 73 continues.

The processing liquid P supplied to the substrate W flushes the processing liquid L supplied to the surface of the substrate W in the previous step. Then, the surface of the substrate W is changed from the processing liquid L to the processing liquid P. At this time, due to the centrifugal force of the rotating substrate W, the supplied processing liquid P is scattered from the periphery of the surface of the substrate W together with the washed-out processing liquid L, hits the inner peripheral surface of the upper cup 30a, and follows the upper surface of the upper cup 30a. The inner peripheral surface drips toward the discharge port 32a. Then, it is recovered through a discharge pipe.

After the supply of the processing liquid P at the processing liquid supply position T2 is completed, as shown in FIG. 4 (g), the shielding plate 63 is lowered to the drying processing position (the position shown by the symbol T3 in FIG. 4) and is closer to the substrate W. After the shielding plate 63 is positioned at the drying processing position T3, the flow rate of the gas G discharged from the gas supply nozzle 73 is increased (for example, 250 liters per minute), and the space between the shielding plate 63 and the substrate W is filled with the gas G. Thereby, since the air in the vicinity of the surface of the substrate W can be reduced, it is possible to block the oxygen that is the cause of the occurrence of water marks near the surface of the substrate W. At this time, the rotation of the substrate W is performed at a high speed (for example, 1000 rpm). Thereby, the processing liquid P existing on the surface of the substrate W is thrown away by the centrifugal force applied to the substrate W due to high-speed rotation. The drying process of the substrate W is performed in this manner. The processing liquid P scattered from the periphery of the substrate W toward the inner peripheral surface of the upper cup 30a is dropped to the discharge port 32a along the inner peripheral surface of the upper cup 30a. Then, it is recovered through a discharge pipe. In addition, while supplying the gas G to the surface of the substrate W, the gas G is supplied to the rear surface of the substrate W from the lower gas nozzle 50. The drying process is performed within a predetermined time, for example, 10 seconds.

Then, after the set drying time has elapsed, the rotation of the substrate W and the rotation of the shielding plate 63 are stopped, and the supply of the gas G is also stopped. Then, as shown in FIG. 4 (h), the upper cups 30a to 30c are lowered by the up-and-down driving mechanism, and the shielding plate 63 is raised to the standby position T1 by the shielding plate elevating mechanism 61.

Next, as shown in FIG. 4 (i), the holding substrate W of the release support pin 23 is carried out of the processing chamber 9 by the carrying robot 7.

As described above, according to the first embodiment, when the processing liquid L and the processing liquid S are supplied to the surface of the substrate W, the shielding plate 63 of the shielding mechanism 60 is rotated at the standby position T1. Thereby, even if the processing liquid L and the processing liquid S supplied to the surface of the substrate W become liquid droplets due to the liquid splash on the surface of the substrate W, and adhere to the surface of the shielding plate 63 facing the substrate W, it can be used The centrifugal force caused by the rotation of the shielding plate 63 is blown away and removed before the shielding plate 63 is lowered toward the processing liquid supply position T2. Therefore, when the shielding plate 63 is brought close to the substrate W for the drying process, it is possible to prevent the droplets of the processing liquid L and the processing liquid S from falling from the surface of the shielding plate 63 facing the substrate W and adhering to the substrate W. Therefore, the quality of the substrate W can be suppressed. In particular, it is possible to prevent the occurrence of water marks on the processed surface of the substrate W. Thereby, the substrate using the processing liquid can be processed well.

In addition, the processing liquid P (IPA, etc.) is supplied from the processing liquid supply nozzle 67 in a state where the processing liquid L or S is not adhered to the surface of the shielding plate 63 facing the substrate W. Therefore, the processing liquid L on the substrate W can be efficiently replaced with a processing liquid P such as IPA.

Incidentally, when the shielding plate 63 is brought close to the substrate W for drying processing, the rotation of the shielding plate 63 may be stopped.

[Second Embodiment] A second embodiment will be described with reference to Fig. 5.

5 (a)-(e) show the cleaning steps of the shielding plate for cleaning the shielding plate 63. This step is performed after the processing of the substrate W is completed, after the substrate W is carried out from the processing chamber 9, and before the unprocessed substrate W is carried into the processing chamber 9. As for the device for performing the cleaning step of the cleaning plate, the same one as in the first embodiment may be used.

Fig. 5 (a) shows the completion of the processing of the substrate W, the upper cups 30a to 30c are lowered, the shielding plate 63 is raised to the standby position T1, and the substrate W is carried out (the same state as shown in Fig. 4 (i)) .

After the substrate W is carried out, as shown in FIG. 5 (b), the shielding plate 63 is lowered to the drying processing position T3. After that, as shown in FIG. 5 (c), the shielding plate 63 and the shaft rotation holding mechanism 21 are rotated. Here, the upper cups 30a to 30c are raised toward the vertical movement mechanism. The processing liquid L is supplied from the lower processing liquid nozzle 48 to a surface (lower surface) of the shielding plate 63 facing the substrate W. The processing liquid L supplied to the shielding plate 63 is scattered from the outer periphery of the shielding plate 63 toward the inner peripheral surface of the upper cup 30a due to the centrifugal force caused by the rotation of the shielding plate 63, and is recovered.

When the supply of the processing liquid L from the lower processing liquid nozzle 48 is completed, as shown in FIG. 5 (d), the gas G is supplied from the lower gas nozzle 50 to the lower surface of the shielding plate 63. Accordingly, the processing liquid L attached to the lower surface of the shielding plate 63 is removed due to the rotation of the shielding plate 63 and the supply of the gas G. Thereby, the lower surface of the shielding plate 63 is dried.

When the supply of the gas G from the lower gas nozzle 50 is completed, as shown in FIG. 5 (e), the rotation of the shielding plate 63 and the shaft rotation holding mechanism 21 is stopped. In addition, the shielding plate 63 is raised to the standby position T1, and the upper cups 30a to 30c are lowered.

As described above, after the substrate W is carried out of the processing chamber 9, the lower surface of the shielding plate 63 is washed and dried. This has the same effect as that of the first embodiment. In addition, since the droplets of the processing liquids attached to the underside of the shielding plate 63 are cleaned and removed when the substrate W is processed, the cleaning degree of the shielding plate 63 can be improved, and the substrate to which the processing liquid is applied can be processed better. .

In addition, in the present embodiment, the cleaning processing and drying processing on the lower surface of the shielding plate 63 use the lower processing liquid nozzle 48 and the lower gas nozzle 50 used for the back surface processing of the substrate W. Thereby, it is not necessary to provide a dedicated device for cleaning and drying the shielding plate 63, so that the substrate processing apparatus 1 can be prevented from increasing in size.

Incidentally, the step of cleaning the shielding plate 63 is not performed every time the substrate W is carried out, and may be performed after processing a predetermined number of substrates.

[Third Embodiment] A third embodiment will be described with reference to Fig. 6. Incidentally, the third embodiment is described in terms of differences from the second embodiment, and other descriptions are omitted.

6 (a) to 6 (e) are steps corresponding to the cleaning of the shielding plate 63 described in the second embodiment. Incidentally, the difference from the second embodiment is that a cleaning process of the side surface portion of the peripheral edge of the shielding plate 63 is added in the step of FIG. 6 (c).

As shown in FIG. 6 (c), when the processing liquid L is supplied from the lower processing liquid nozzle 48 to the surface (lower side) of the shielding plate 63 facing the substrate, the control unit 10 b controls the first nozzle moving mechanism 53 The first nozzle 52 is positioned above the periphery of the shielding plate 63. Then, the processing liquid L is supplied to the peripheral edge of the shielding plate 63 from the first nozzle 52, and the side surface of the peripheral edge portion of the shielding plate 63 is cleaned by the processing liquid L.

As described above, the third embodiment has the same effects as the second embodiment. In addition, with the treatment liquid L, the side surface portions are cleaned in addition to the lower surface of the shielding plate 63. If the droplets of the respective processing liquids are allowed to adhere to the shielding plate 63 in this manner, the deposited matter of the droplets of the respective processing liquids may precipitate and fall toward the surface of the substrate W. Since the present embodiment can suppress the generation of deposits such as processing liquid and IPA by cleaning the side surface of the shielding plate 63, it is possible to prevent the occurrence of product defects due to contamination of the substrate W and the like.

In the present embodiment, the cleaning process of the side surface of the shielding plate 63 uses the first nozzle 52 used for the surface treatment of the substrate W. Thereby, even in the case where the side surface of the shielding plate 63 is cleaned, it is possible to prevent the substrate processing apparatus 1 from increasing in size.

Incidentally, the third embodiment is implemented after processing a predetermined number of substrates. In addition, not only the first nozzle 52 is positioned above the peripheral edge of the shielding plate 63 to supply the processing liquid L, but the first nozzle 52 can also be shaken to clean the upper surface of the shielding plate 63.

Although several embodiments of the present invention have been described above, these embodiments are used as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or their modifications are included in the scope and gist of the invention, and are included in the invention described in the scope of patent application, and their equivalent scope.

For example, the first embodiment and the second embodiment may be combined with the third embodiment. In this case, when the processing of the plurality of substrates W is to be continuously performed, it may be set in advance in the memory section of the control unit 10b as the implementation conditions of the first embodiment, the second embodiment, and the third embodiment, respectively. The number of processed substrates (set number of substrates). Therefore, the control unit 10b allows each embodiment to operate on the condition that the number of processed pieces of the substrate W reaches the set number of pieces. Specifically, in the first embodiment, the processing is performed every one substrate W, in the second embodiment, the processing is performed every ten pieces, and in the third embodiment, the processing is performed every one batch. Instead of combining all three embodiments, the first embodiment and the second embodiment may be combined, and the first embodiment and the third embodiment may be combined. It is to be noted that setting the number of slices to zero is not implemented.

Incidentally, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made in the range of implementation without departing from the gist. In addition, the respective embodiments can be appropriately combined and implemented, and in this case, the combined effect can be obtained. In addition, the above-mentioned embodiment includes various inventions, and various inventions can be extracted by a combination selected from a plurality of disclosed constituent elements. For example, when deleting a few constituent elements from all the constituent elements shown in the embodiment can solve the problem and obtain an effect, the constituents after deleting the constituent elements can be extracted as an invention.

1‧‧‧ substrate processing device
2‧‧‧ substrate storage box
3‧‧‧mounting table
4, 7‧‧‧ handling robot
5, 8‧‧‧ Handling rail
6‧‧‧ buffer table
9‧‧‧ treatment room
10‧‧‧ with unit
10a‧‧‧Gas-liquid supply unit
10b‧‧‧control unit
21‧‧‧ Shaft rotation holding mechanism
22‧‧‧rotating body
23‧‧‧Support sales
24‧‧‧ Rotating mechanism
30‧‧‧ cup body
30a, 30b, 30c‧‧‧‧Cup
31a, 31b, 31c
32a, 32b, 32c
33‧‧‧ bottom
40‧‧‧back nozzle
41‧‧‧Fixed shaft
42‧‧‧ ring wall
43‧‧‧Circular groove
44‧‧‧ Recess
45‧‧‧inclined surface
46‧‧‧ drain port
47‧‧‧Drain tube
48‧‧‧ Lower processing liquid nozzle
49‧‧‧ treatment liquid supply pipe
50‧‧‧ Lower gas nozzle
51‧‧‧Gas supply pipe
52‧‧‧The first nozzle
53‧‧‧The first nozzle moving mechanism
54‧‧‧ 2nd nozzle
55‧‧‧The second nozzle moving mechanism
60‧‧‧ shelter
61‧‧‧shield plate lifting mechanism
61a‧‧‧Rotating member
62‧‧‧arm
63‧‧‧shield
63a‧‧‧Nozzle opening
64‧‧‧shield plate rotation mechanism
64a‧‧‧rotating body
64b‧‧‧ Ontology
64c‧‧‧Motor Department
64d‧‧‧Connecting board
64e‧‧‧bearing
64f‧‧‧ opening
64g‧‧‧ protrusion
64h‧‧‧coil
64i‧‧‧permanent magnet
65‧‧‧shield plate holding mechanism
65a‧‧‧connecting pin
66‧‧‧Processing liquid introduction section
67‧‧‧ treatment liquid supply nozzle
68‧‧‧Nozzle spout
70‧‧‧Gas supply port
71‧‧‧Gas introduction route
73‧‧‧Gas supply nozzle
G‧‧‧gas
L, S, P ‧ ‧ ‧ Treatment liquid
Q, R‧‧‧ Central axis
T1‧‧‧Standby position
T2‧‧‧Processing liquid supply position
T3‧‧‧drying position
W‧‧‧ substrate

Fig. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to the first embodiment.

Fig. 2 is a diagram showing a schematic configuration of a processing chamber according to the first embodiment.

Fig. 3 is a sectional view showing the configuration of a shielding plate according to the first embodiment.

4 (a) to (i) ... are diagrams showing a series of processing operations related to the first embodiment.

5 (a) to (e) ... are diagrams showing processing operations related to the second embodiment.

6 (a) to (e) ... are diagrams showing processing operations related to the third embodiment.

1‧‧‧ substrate processing device

2‧‧‧ substrate storage box

3‧‧‧mounting table

4, 7‧‧‧ handling robot

5, 8‧‧‧ Handling rail

6‧‧‧ buffer table

9‧‧‧ treatment room

10‧‧‧ with unit

10a‧‧‧Gas-liquid supply unit

10b‧‧‧control unit

W‧‧‧ substrate

Claims (9)

A substrate processing device is a substrate processing device that rotates a substrate for cleaning processing, and includes: a shaft rotation holding mechanism to hold the substrate; a processing liquid supply nozzle to supply the processing liquid to the substrate; a shielding plate and the shaft rotation holding mechanism The held substrates are arranged opposite to each other, and move in a direction closer to and away from the substrates; a shielding plate rotating mechanism rotates the shielding plates; and a control device positions the shielding plates to a standby position when the processing liquid is not supplied, The supply of the processing liquid from the processing liquid supply nozzle is to control the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from the standby position. The substrate processing apparatus according to claim 1, wherein the shielding plate has a gas supply nozzle for supplying gas to the substrate; during the processing of the substrate using the processing liquid, gas is discharged from the gas supply nozzle, and the gas is discharged The amount is such that the treatment liquid does not adhere to the nozzle opening provided in communication with the gas supply nozzle and provided in the shielding plate. For example, the substrate processing apparatus of claim 1 is provided with a back nozzle head for supplying the processing liquid and gas to the back surface of the substrate. After the substrate is removed from the processing chamber, the back nozzle head is directed toward the shielding plate. The processing liquid and the gas are supplied. The substrate processing apparatus according to claim 1, wherein the processing liquid supply nozzle supplies the processing liquid to a periphery of the shielding plate. A substrate processing device is a substrate processing device that rotates a substrate for cleaning processing, and includes: a shaft rotation holding mechanism to hold the substrate; a processing liquid supply nozzle to supply the processing liquid to the substrate; a shielding plate and the shaft rotation holding mechanism The held substrates are arranged opposite to each other and moved in a direction closer to and away from the substrates; a shielding plate rotating mechanism rotates the shielding plates; a back nozzle head for supplying the processing liquid and gas to the back of the substrate respectively; and a control device; When the control device reaches the first set number in advance, when the processing liquid is not supplied, the shielding plate is positioned to a standby position, and the processing liquid is supplied from the processing liquid supply nozzle to control the shielding plate. The rotating mechanism rotates the shielding plate without moving the shielding plate from the standby position. When the second set number of sheets is reached in advance, the rotating mechanism is controlled to move the substrate from the processing chamber through the back surface. The nozzle head to supply the processing liquid and the gas to the shielding plate, To set the number of sheets 3 set in advance, to control, after unloading the substrate from the processing chamber by the treatment liquid supplying process liquid to the supply nozzle peripheral edge of the shielding plate. A substrate processing method is a substrate processing method in which a substrate is rotated for cleaning processing, and includes: a substrate holding step to hold the substrate; a processing liquid supply step to supply the processing liquid from the processing liquid supply nozzle to the substrate; and a shielding plate to move Steps of moving the shielding plate disposed opposite to the substrate held by the substrate holding step in a direction close to the substrate; and the step of rotating the shielding plate, positioning the shielding plate when the processing liquid is not supplied. When the processing liquid is supplied from the processing liquid supply nozzle to the standby position, the shielding plate is rotated without moving the shielding plate from the standby position. The substrate processing method according to claim 6, wherein in the processing liquid supply step, a gas is supplied from the shielding plate. The method for processing a substrate according to claim 6, further includes a step of cleaning a shielding plate, and after the substrate is removed from the processing chamber, the processing liquid and the gas are supplied to the shielding plate, respectively. The substrate processing method according to claim 8, wherein the step of cleaning the shielding plate is to supply the processing liquid to a periphery of the shielding plate.