TW201540858A - Systems and methods for generating metal oxide coatings - Google Patents
Systems and methods for generating metal oxide coatings Download PDFInfo
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- TW201540858A TW201540858A TW104105241A TW104105241A TW201540858A TW 201540858 A TW201540858 A TW 201540858A TW 104105241 A TW104105241 A TW 104105241A TW 104105241 A TW104105241 A TW 104105241A TW 201540858 A TW201540858 A TW 201540858A
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
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Abstract
Description
本申請案併入2011年8月17日申請之公開美國申請案第13/211,884號之整體作為參照,其發明名稱為"Deposition systems with a rotating drum"。 The present application is incorporated by reference in its entirety to U.S. Application Serial No. 13/211,884, the entire disclosure of which is incorporated herein by reference.
本發明大體而言係有關薄膜沉積系統。更明確地說,本發明係有關用於沉積反應膜之具有分開之金屬化區及反應區之沉積系統。 The invention is generally related to thin film deposition systems. More specifically, the present invention relates to a deposition system having a separate metallization zone and reaction zone for depositing a reaction film.
DC磁控濺鍍係一種薄膜沉積技術。例如,濺鍍可在含有氬氣(Ar)之環境中發生。對導電金屬"目標物"施加負DC電位。建立電漿放電以使氣體離子化,由此產生Ar+離子。正電荷Ar+離子加速朝向負電荷目標物而造成目標物經由濺鍍噴出,其轉而在相對面放置之基板上產生金屬膜。 DC magnetron sputtering is a thin film deposition technique. For example, sputtering can occur in an environment containing argon (Ar). A negative DC potential is applied to the conductive metal "target". A plasma discharge is established to ionize the gas, thereby producing Ar+ ions. The positively charged Ar+ ions accelerate toward the negatively charged target, causing the target to be ejected via sputtering, which in turn produces a metal film on the substrate placed on the opposite side.
導入反應氣體如O2或N2,可藉由這些氣體與沉積之金屬膜間的反應而使膜材呈現化合物的性質。這些反應氣體的進一步離子化及加速除了可改善膜材密度以 及影響其他膜材性質如膜材應力,硬度,指數及吸收度外,亦可增強氣體與膜材間的反應性。習知沉積系統複雜且遭遇到某些缺點,包含降低晶圓生產率及材料污染問題,其限制膜材品質且需要延長沉積設備之保養維修清潔。 The introduction of a reaction gas such as O 2 or N 2 allows the film to exhibit the properties of the compound by the reaction between these gases and the deposited metal film. Further ionization and acceleration of these reactive gases can enhance the reactivity of the gas and the membrane in addition to improving the density of the membrane and affecting other membrane properties such as membrane stress, hardness, index and absorbance. Conventional deposition systems are complex and suffer from certain drawbacks, including reduced wafer productivity and material contamination issues, which limit film quality and require extended maintenance of the deposition equipment.
再者,在氧化物塗層之習知DC反應磁控濺鍍(DCRMS)系統中,即使是小量O2(例如,百萬分率(ppm))之目標物污染,亦會造成目標物起弧。又,若足夠的反應氣體,如O2,遇到目標物,其會造成目標物表面轉換成介電/絕緣體,在此情形下,DC電源供應可能關閉,因此中斷製程。由於這些缺點,已發展各種系統以監控光學電漿性質且提供回饋給O2質量流動控制器(Gencoa,Speedflo®或Reactive Sputtering Inc.,IRESS)以防止目標物敗壞。其他更多機械手段包含以高壓氣體簾幕遮蔽磁控管。有時此遮蔽係相應著長濺鍍投射距離及高抽氣速度進行之,以防止起弧。(Scobey,反應磁控濺鍍裝置及方法,CA 2254354 A1)。 Furthermore, in conventional DC reactive magnetron sputtering (DCRMS) systems for oxide coatings, even small amounts of O 2 (eg, parts per million (ppm)) target contamination can cause targets. Arcing. Also, if a sufficient reaction gas, such as O 2 , encounters the target, it causes the surface of the target to be converted into a dielectric/insulator. In this case, the DC power supply may be turned off, thus interrupting the process. Because of these drawbacks, various systems have been developed to monitor the optical properties of the plasma O 2 and provide feedback to a mass flow controller (Gencoa, Speedflo® or Reactive Sputtering Inc., IRESS) to prevent the target destruction. Other more mechanical means include shielding the magnetron with a high pressure gas curtain. Sometimes this masking is carried out corresponding to a long sputter casting distance and a high pumping speed to prevent arcing. (Scobey, Reactive Magnetron Sputtering Apparatus and Method, CA 2254354 A1).
因此,有改良沉積系統及方法的需求。 Therefore, there is a need for improved deposition systems and methods.
本發明之一方面係揭露一種沉積系統,其包括具有產生金屬原子之濺鍍源之金屬化區,及具有產生反應離子之離子源之反應區。此系統包括其上可安置至少一個基板之可旋轉支架,其中,可旋轉支架係配置成在金屬化區與反應區之間交替地移動該至少一個基板。再者,此系統包括位在相對於該濺鍍源使得至少一部份金屬離子 通過孔隙之可移動孔隙。在許多實施例中,可移動孔隙係設置在濺鍍源與可旋轉支架之間。 One aspect of the invention discloses a deposition system comprising a metallization region having a sputtering source that produces metal atoms, and a reaction region having an ion source that generates reactive ions. The system includes a rotatable mount on which at least one substrate can be placed, wherein the rotatable mount is configured to alternately move the at least one substrate between the metallization zone and the reaction zone. Furthermore, the system includes at least a portion of the metal ion positioned relative to the sputtering source A movable aperture through the aperture. In many embodiments, the movable aperture system is disposed between the sputter source and the rotatable mount.
在許多實施例中,沉積系統可復包含圍欄(本文亦稱為前廊),濺鍍源至少部分地圈圍在該圍欄中。此圍欄可包含開口,其提供由濺鍍源所產生之金屬離子的出口。可移動孔隙可相對於圍欄的開口移動(例如,沿著直線維度),使得此孔隙可接收經由該開口退出圍欄之至少一部份金屬離子。在許多實施例中,孔隙可利用開口實質標示之,以使可通過孔隙之退出圍欄之金屬離子數達到最大。在許多實施例中,孔隙可相對於濺鍍源移動以調整其中設置著濺鍍源之圍欄內的壓力。再者,在許多實施例中,孔隙本身可形成其中圈圍濺鍍源之圍欄(前廊)。 In many embodiments, the deposition system can include a fence (also referred to herein as a front porch) with a source of sputtering at least partially encircled within the enclosure. The fence can include an opening that provides an outlet for metal ions generated by the sputtering source. The movable aperture is movable relative to the opening of the fence (eg, along a linear dimension) such that the aperture can receive at least a portion of the metal ions exiting the fence via the opening. In many embodiments, the apertures may be substantially labeled with openings to maximize the number of metal ions that can exit the enclosure through the apertures. In many embodiments, the apertures are movable relative to the sputter source to adjust the pressure within the enclosure in which the sputter source is disposed. Moreover, in many embodiments, the aperture itself can form a fence (front porch) in which the source of sputtering is surrounded.
孔隙可以配置成相對於濺鍍源線形地移動之孔隙板形成之。可使用各式各樣的機制使孔隙板移動。舉例而言,可使用複數個線形動作饋入裝置(feedthrough)以移動孔隙板,如下文所詳述。 The apertures may be configured to be formed with a fringe plate that moves linearly relative to the sputter source. A variety of mechanisms can be used to move the aperture plates. For example, a plurality of linear motion feedthroughs can be used to move the aperture plate, as described in more detail below.
濺鍍源可產生金屬離子流量,該金屬離子流量呈現相對於中心軸的角向流量分佈。舉例而言,角向流量分佈可為正弦曲線,如下文所詳述。可利用孔隙使流量的角向分佈窄化。如下文所述,金屬原子之角向分佈之該種窄化不僅可利用可移動孔隙予以達成,亦可利用位在相對於濺鍍源之固定孔隙達成之,以得到流量之所要的角向分佈。在使用可移動孔隙之許多實施例中,孔隙可配置成沿著該中心軸移動以使金屬原子之流量的角向分佈窄化 (使流量瞄準)。在許多實施例中,孔隙係配置成提供原子之瞄準束,其特徵在於使發散角度最大化,其係等於或小於約30度,例如,約10至約30度。 The sputtering source produces a flow of metal ions that exhibit an angular flow distribution relative to the central axis. For example, the angular flow distribution can be a sinusoid as detailed below. The pores can be utilized to narrow the angular distribution of the flow. As described below, this narrowing of the angular distribution of the metal atoms can be achieved not only by the movable aperture, but also by the fixed aperture relative to the sputtering source to obtain the desired angular distribution of the flow. . In many embodiments in which a movable aperture is used, the aperture can be configured to move along the central axis to narrow the angular distribution of the flow of metal atoms. (Aim the flow). In many embodiments, the pore system is configured to provide an aiming beam of atoms characterized by maximizing the divergence angle, which is equal to or less than about 30 degrees, for example, from about 10 to about 30 degrees.
可使用各式各樣的濺鍍及離子源。在許多實施例中,濺鍍源為磁控管且離子源配置成產生O2離子。 A wide variety of sputtering and ion sources can be used. In many embodiments, the sputtering source is a magnetron and the ion source is configured to generate O 2 ions.
在另一方面,本發明係揭露一種塗佈基板,其包含基底基板(例如,矽基板),及設置在基板表面上之金屬氧化物膜(例如,氧化鋁膜),其中,金屬氧化物膜實質上不含惰性氣體雜質(例如,氬氣,氖氣,或氙氣)。舉例而言,金屬氧化物膜(塗層)中之惰性氣體雜質的濃度可為小於1%,或較佳為小於0.5%,或更佳為1-10百萬分率。再者,在許多實施例中,金屬氧化物膜的厚度可為約0.1微米至約50微米。 In another aspect, the present invention discloses a coated substrate comprising a base substrate (eg, a tantalum substrate), and a metal oxide film (eg, an aluminum oxide film) disposed on a surface of the substrate, wherein the metal oxide film It is substantially free of inert gas impurities (eg, argon, helium, or helium). For example, the concentration of the inert gas impurities in the metal oxide film (coating layer) may be less than 1%, or preferably less than 0.5%, or more preferably 1-10 parts per million. Further, in many embodiments, the metal oxide film can have a thickness of from about 0.1 microns to about 50 microns.
本發明之各種方面之進一步瞭解可參照與相關圖式關聯之下述詳細說明獲得之,這些圖式簡述如下。 Further understanding of the various aspects of the invention can be obtained by reference to the following detailed description in connection with the associated drawings, which are briefly described below.
10‧‧‧系統 10‧‧‧System
12‧‧‧外圍欄 12‧‧‧ peripheral bar
14‧‧‧金屬化區 14‧‧‧metallization area
16‧‧‧反應區 16‧‧‧Reaction zone
18‧‧‧鼓 18‧‧‧ drum
20‧‧‧基板 20‧‧‧Substrate
22‧‧‧磁控管 22‧‧‧Magnetron
24‧‧‧惰性氣體源 24‧‧‧Inert gas source
26‧‧‧前廊 26‧‧‧ front gallery
27‧‧‧孔隙 27‧‧‧ pores
28‧‧‧外擋板 28‧‧‧Outer baffle
30‧‧‧離子源 30‧‧‧Ion source
32‧‧‧氣體源 32‧‧‧ gas source
34‧‧‧圍欄 34‧‧‧Fence
36‧‧‧差動泵 36‧‧‧Differential pump
38‧‧‧內擋板 38‧‧‧ inner baffle
40‧‧‧外擋板 40‧‧‧Outer baffle
42‧‧‧中空陰極電子源 42‧‧‧ hollow cathode electron source
52‧‧‧主泵 52‧‧‧Main pump
76‧‧‧陽極 76‧‧‧Anode
142‧‧‧內擋板 142‧‧‧ inner baffle
900‧‧‧系統 900‧‧‧ system
901‧‧‧孔隙板 901‧‧‧ aperture plate
901a‧‧‧孔隙 901a‧‧‧ pore
902‧‧‧濺鍍源 902‧‧‧Sputter source
902'‧‧‧支架 902'‧‧‧ bracket
904‧‧‧圍欄 904‧‧‧Fence
905‧‧‧線形動作饋入裝置 905‧‧‧Linear motion feeding device
905a‧‧‧外部旋轉旋鈕 905a‧‧‧External rotary knob
905b‧‧‧耦合器 905b‧‧‧ coupler
905c‧‧‧內部棒桿 905c‧‧‧Internal rod
Pa‧‧‧壓力 Pa‧‧‧ pressure
Pb‧‧‧壓力 Pb‧‧‧ pressure
Pr‧‧‧壓力 Pr‧‧‧ pressure
藉由參照與隨附之圖式關聯之下述說明可更加瞭解本發明之上述及進一步優點,其中各圖式中相同的數字表示相同的結構元件及特點。圖式無需刻度,所要強調的是說明本發明之原理。 The above and further advantages of the present invention will become more apparent from the description of the appended claims. The drawings are not required to be scaled, and it is emphasized that the principles of the invention are illustrated.
第1圖係依據本發明之沉積系統之實施例的上視圖。 Figure 1 is a top view of an embodiment of a deposition system in accordance with the present invention.
第2圖係第1圖所示之沉積系統的部份截面圖。 Figure 2 is a partial cross-sectional view of the deposition system shown in Figure 1.
第3圖係可使用於第1圖之沉積系統之鼓之實施例的透視圖。 Figure 3 is a perspective view of an embodiment of a drum that can be used in the deposition system of Figure 1.
第4圖係可使用於第1圖之沉積系統之金屬化區之實施例的圖式。 Figure 4 is a drawing of an embodiment of a metallization zone that can be used in the deposition system of Figure 1.
第5圖係位在相對於兩個基板之濺鍍光罩之實施例的圖式。 Figure 5 is a diagram of an embodiment of a sputtered reticle relative to two substrates.
第6A圖係沉積系統之實施例的透視圖。 Figure 6A is a perspective view of an embodiment of a deposition system.
第6B圖係可使用於第6A圖之沉積系統之反應區之實施例的透視圖。 Figure 6B is a perspective view of an embodiment of a reaction zone that can be used in the deposition system of Figure 6A.
第7A圖係沉積系統之實施例的透視圖。 Figure 7A is a perspective view of an embodiment of a deposition system.
第7B圖係可使用於第7A圖之沉積系統之反應區之實施例的透視圖。 Figure 7B is a perspective view of an embodiment of a reaction zone that can be used in the deposition system of Figure 7A.
第8A圖係可使用於第7A圖之沉積系統之金屬化區之實施例的圖式。 Figure 8A is a diagram of an embodiment of a metallization zone that can be used in the deposition system of Figure 7A.
第8B圖係金屬化區之實施例的圖式。 Figure 8B is a diagram of an embodiment of a metallization zone.
第8C圖係具有由孔隙遮蔽所形成之孔隙之金屬化區之實施例的圖式。 Figure 8C is a diagram of an embodiment of a metallization region having voids formed by aperture masking.
第9圖係依據本發明之教示之包含設置在濺鍍源前之可移動孔隙之實施例的圖解部份圖式。 Figure 9 is a diagrammatic partial view of an embodiment of a movable aperture disposed in front of a sputter source in accordance with the teachings of the present invention.
第10圖係使用依據本發明之孔隙之濺鍍金屬原子之瞄準的圖解圖式。 Figure 10 is a graphical representation of the aiming of a sputtered metal atom using a void in accordance with the present invention.
第11A圖係顯示當使用非瞄準之金屬流量填充孔道時之掐掉效應的圖式,以及第11B圖係顯示使用依據本教示之實施例之金屬原子之瞄準流量填充孔道的圖式。 Figure 11A is a diagram showing the collapse effect when a non-targeted metal flow is used to fill a channel, and Figure 11B is a diagram showing the filling of a hole using an aiming flow of a metal atom in accordance with an embodiment of the present teachings.
本文所述之沉積系統之實施例係提供於具有比習知系統改良之生產率和品質之金屬膜沉積及其後續反應。例如,沒有限制,在矽晶圓上沉積鋁膜然後接續地與氧氣反應,以形成Al2O3作為半導體組件中之介電質。其他實例膜材為SiO2、TiN及TiC。此外,使沉積在玻璃基板上之鋁膜與氧氣後續地反應以形成氧化鋁膜,提供消費性電子應用之玻璃上的耐擦刮層。亦可使用撓曲性聚合物(塑膠)基板。在其他實例中,沉積多金屬膜層,各具有不同的折射率以製造高品質光學塗層。在另一實例中,交替地使用多反應氣體以形成SiOxNx材料。在另一實例中,使用多金屬目標物且在反應區中具有惰性氣體以形成X-光鏡之精準多層膜。金屬膜與反應氣體之許多組合可以具有較少材料之交叉污染且改善沉積一致性之方式使用於本文所述之實施例中。 Embodiments of the deposition system described herein are provided for metal film deposition and subsequent reactions having improved productivity and quality over conventional systems. For example, without limitation, an aluminum film is deposited on the germanium wafer and then successively reacted with oxygen to form Al 2 O 3 as a dielectric in the semiconductor component. Other example films are SiO 2 , TiN and TiC. In addition, the aluminum film deposited on the glass substrate is subsequently reacted with oxygen to form an aluminum oxide film to provide a scratch resistant layer on the glass for consumer electronic applications. A flexible polymer (plastic) substrate can also be used. In other examples, multiple metal film layers are deposited, each having a different refractive index to produce a high quality optical coating. In another example, multiple reactive gases are used alternately to form a SiOxNx material. In another example, a multi-metal target is used and an inert gas is present in the reaction zone to form an accurate multilayer film of X-ray mirrors. Many combinations of metal films and reactive gases can be used in embodiments described herein in a manner that has less material cross-contamination and improved deposition uniformity.
本文所用"約"一詞係指數值之至多5%,或較佳至多1%之變動。 The term "about" as used herein is a variation of the index value of at most 5%, or preferably at most 1%.
第1圖係顯示依據本發明之沉積系統之實施例10。實施例10包含具有分開之金屬化區14及反應區16之外圍欄12。鼓18具有複數個貼附於鼓18之外表面之基板20,使得鼓18的旋轉造成至少一個基板20交替地通過金屬化區14及反應區16。在其他實施例中,鼓18係以圓形以外之不同形狀取代之。例如,使用六角鼓容置較大之基板。可預想在其他實施例中使用其他鼓形狀以容置不同大小,厚度及形狀之基板。 Figure 1 shows an embodiment 10 of a deposition system in accordance with the present invention. Embodiment 10 includes a perimeter strip 12 having separate metallization zones 14 and reaction zones 16. The drum 18 has a plurality of substrates 20 attached to the outer surface of the drum 18 such that rotation of the drum 18 causes at least one substrate 20 to alternately pass through the metallization zone 14 and the reaction zone 16. In other embodiments, the drum 18 is replaced by a different shape than a circle. For example, use a hex drum to accommodate a larger substrate. Other drum shapes are contemplated for use in other embodiments to accommodate substrates of different sizes, thicknesses, and shapes.
金屬化區14包含藉由惰性氣體源24進料之磁控管22。磁控管22圈圍在前廊26中且具有孔隙27。孔隙使得可將壓力導入前廊中以積聚高於反應區之壓力。惰性氣體源較佳為氬氣,但亦可為其他惰性氣體如氙氣,例如。配置一對外擋板28以助於維持將惰性氣體進料至金屬化區14中及經由泵(第1圖中未示出)退出之由氣體源24所發展出之壓力。擋板28係靠近於鼓18延伸且同時在其經由金屬化區14旋轉時保持與基板20分開。孔隙與鼓表面18的距離亦決定積聚在前廊26中之壓力。 Metallization zone 14 includes magnetron 22 that is fed by inert gas source 24. The magnetron 22 encircles the front porch 26 and has apertures 27. The pores allow pressure to be introduced into the front porch to accumulate pressure above the reaction zone. The inert gas source is preferably argon, but may be other inert gases such as helium, for example. An outer baffle 28 is provided to assist in maintaining the pressure developed by the gas source 24 to feed inert gas into the metallization zone 14 and exit via a pump (not shown in FIG. 1). The baffle 28 extends adjacent to the drum 18 while remaining separate from the substrate 20 as it rotates through the metallization zone 14. The distance of the aperture from the drum surface 18 also determines the pressure build up in the front porch 26.
反應區16包含藉由氣體源32進料之離子源30。此氣體較佳為反應氣體,包含但不限於氧氣或氮氣,但亦可為惰性氣體如氬氣。在一實施例中,使用中空陰極電子源42以將電子注入反應區16中,以維持反應區16中之電漿中性或正與負電荷離子之零淨電荷。一對內擋板38與外擋板40有助於維持由氣體源32之氣體流入及經由一對差動泵36退出所造成之反應區16中的壓力。反應區16以圍欄34進一步圈圍有助於維持反應區壓力。此外,沉積在基板20上之金屬膜本身為反應區中之反應氣體之額外的選擇性泵。差動泵36與膜本身兩者的作用係將任何殘留的反應氣體降低至不會有感知地滲透至較高壓力之金屬化區14中之程度。最終抽氣步驟係因濺鍍之金屬原子及吸氣反應在26之內壁上而進入金屬化區14之任何反應氣體的後續選擇性抽氣。任何O2分子之低平均自由途徑,例如在較高氬氣背景壓力金屬化區14內,在與目標物接觸之 前造成任何O2氣體被反應及吸氣。 Reaction zone 16 contains ion source 30 that is fed by gas source 32. The gas is preferably a reactive gas, including but not limited to oxygen or nitrogen, but may also be an inert gas such as argon. In one embodiment, a hollow cathode electron source 42 is used to inject electrons into the reaction zone 16 to maintain a zero net charge of the plasma neutral or positive and negative charge ions in the reaction zone 16. A pair of inner baffles 38 and outer baffles 40 help maintain the pressure in the reaction zone 16 caused by the inflow of gas from the gas source 32 and exit through a pair of differential pumps 36. Further encircling of reaction zone 16 with fence 34 helps maintain reaction zone pressure. In addition, the metal film deposited on the substrate 20 itself is an additional selective pump for the reactant gases in the reaction zone. The action of both the differential pump 36 and the membrane itself reduces any residual reactive gases to a level that does not perceptibly penetrate into the higher pressure metallization zone 14. The final pumping step is a subsequent selective pumping of any reactant gases entering the metallization zone 14 by the sputtered metal atoms and the gettering reaction on the inner wall of 26. The low mean free path of any O 2 molecule, such as in the higher argon background pressure metallization zone 14, causes any O 2 gas to be reacted and inhaled prior to contact with the target.
在一實施例中,將系統10抽氣至基本壓力Pb且以氬氣填充金屬化區14,使金屬化區14維持在壓力Pa,1x10-3至1x10-2托,例如。反應氣體如O2經由氣體源32流入反應區16且維持在壓力Pr,其中,Pr實質地小於Pa,1x10-4至5x10-4托,例如。藉由以直流電(DC),脈衝或射頻(RF)電源供應激起電漿放電而使具有磁控管22之金屬化區14中之氬氣為正電荷。正電荷之氬離子撞擊安置在磁控管22上之金屬目標物,導致在其通過金屬化區14時基板20上之金屬膜的濺鍍。然後在旋轉鼓18時使基板20通過反應區16。反應氣體利用離子源30離子化成電漿。在一實施例中,離子源為電子迴旋共振(ECR)電漿源。然後使具有沉積金屬膜之基板20在反應區16中反應及緻密化。例如,若O2為反應區16中之反應氣體,而鋁為金屬化區14中所使用之目標物,則鋁膜會轉換成Al2O3。應瞭解離子源30係包含適合於活化反應氣體或物種(例如,O2)且加速至基板20中之任何電漿或離子源以造成反應氣體與沉積金屬間之實質上完全之反應,以形成化學計量之膜材或合金及使膜材緻密化。第2圖進一步說明第1圖所述之系統。使用泵,例如低溫泵52排放金屬化區14所使用之氬氣及反應區16所使用之部份反應氣體。經由泵52與差動泵36之組合排放反應氣體部份係由相對於轉鼓18之擋板38及40之間隔控制之。 In one embodiment, system 10 is evacuated to a base pressure Pb and metallization zone 14 is filled with argon to maintain metallization zone 14 at a pressure Pa, 1 x 10 -3 to 1 x 10 -2 Torr, for example. A reactive gas such as O 2 flows into the reaction zone 16 via the gas source 32 and is maintained at a pressure Pr, wherein Pr is substantially less than Pa, 1 x 10 -4 to 5 x 10 -4 Torr, for example. The argon gas in the metallization zone 14 having the magnetron 22 is positively charged by pulsing the plasma discharge with a direct current (DC), pulsed or radio frequency (RF) power supply. The positively charged argon ions strike the metal target disposed on the magnetron 22, causing sputtering of the metal film on the substrate 20 as it passes through the metallization region 14. The substrate 20 is then passed through the reaction zone 16 while the drum 18 is being rotated. The reaction gas is ionized into a plasma by the ion source 30. In an embodiment, the ion source is an electron cyclotron resonance (ECR) plasma source. The substrate 20 having the deposited metal film is then reacted and densified in the reaction zone 16. For example, if O 2 is the reactive gas in the reaction zone 16, and aluminum is the target used in the metallization zone 14, the aluminum film is converted to Al 2 O 3 . The ion source should be understood that system 30 is adapted to contain a reaction gas or the activated species (e.g., O 2) and to accelerate the plasma or ion source of any of the substrate 20 to cause substantially complete reaction of the reaction between the gas and the metal is deposited to form A stoichiometric film or alloy and densification of the film. Figure 2 further illustrates the system described in Figure 1. The argon gas used in the metallization zone 14 and a portion of the reaction gas used in the reaction zone 16 are discharged using a pump, such as a cryopump 52. The portion of the reactive gas that is discharged via the combination of pump 52 and differential pump 36 is controlled by the spacing of baffles 38 and 40 relative to drum 18.
在一實施例中,系統10係藉由以固定速度 旋轉鼓18而操作之。將反應氣體設定至壓力Pr再激起離子源。針對所需之反應調整離子源之能量及流量。使氬氣流入金屬化區14中並使氬氣的流動調整至壓力Pa。然後激起磁控管22以形成電漿並調整對磁控管22之電力至電力P,使得鼓18之每一轉在基板20上沉積5-7埃(Å)之金屬膜。然後使基板20通過反應區以使沉積之膜材反應,然後使鼓後續地通過基板回到金屬化區14以沉積另一個金屬膜。利用此方法,膜材成長快速,穩定且可預測,此乃由於磁控管電力對金屬膜沉積速率呈線形關係之故。由於磁控管22中之目標物可預測地侵蝕且沉積速率下降,因此,系統10的操作者增加對磁控管22的電力以維持實質恆定之沉積速率。在一實施例中,磁控管電力之此調整係藉由基於系統10之操作時間之演算法予以自動地控制之。 In an embodiment, the system 10 is at a fixed speed The drum 18 is rotated to operate. The reaction gas is set to the pressure Pr to excite the ion source. Adjust the energy and flow rate of the ion source for the desired reaction. An argon gas stream is introduced into the metallization zone 14 and the flow of argon gas is adjusted to the pressure Pa. The magnetron 22 is then energized to form a plasma and the power to the magnetron 22 is adjusted to power P such that each turn of the drum 18 deposits a 5-7 angstrom (Å) metal film on the substrate 20. Substrate 20 is then passed through the reaction zone to react the deposited film, and then the drum is subsequently passed back through the substrate to metallization zone 14 to deposit another metal film. With this method, the film grows rapidly, stably, and predictably because of the linear relationship between the magnetron power and the metal film deposition rate. As the target in the magnetron 22 predictably erodes and the deposition rate decreases, the operator of the system 10 increases the power to the magnetron 22 to maintain a substantially constant deposition rate. In one embodiment, this adjustment of magnetron power is automatically controlled by an algorithm based on the operating time of system 10.
例如,若鼓18之每一轉沉積5A(例如5x10-10m),以100rpm之鼓運轉,一分鐘會沉積500A之反應膜,十分鐘為5000A。沉積速率進一步受限於反應氣體之反應時間,其進一步受限於離子源30可傳送之最大離子流量或束電流。 For example, if each drum of the drum 18 is deposited 5A (for example, 5x10 -10 m) and operated at 100 rpm drum, a 500 A reaction film is deposited in one minute, and 5000 A is ten minutes. The deposition rate is further limited by the reaction time of the reactive gas, which is further limited by the maximum ion flux or beam current that the ion source 30 can deliver.
系統10所使用之設定之進一步實例係使用三吋x六吋之陰極(陰極為下述磁控管22之一部份)並對磁控管22施加900瓦之DC電力,其每秒產生鋁之32A之沉積速率(基板在金屬化區中)。此稱為"靜態"沉積速率。對鼓18以60rpm旋轉而言,典型之金屬化區及基板產生1.15A/rev.之"動態"沉積速率。若磁控管22電力增加至1500 瓦,則靜態沉積速率會比使用900瓦之速率大約1.66,導致53A/sec靜態沉積速率。在系統10之一實例中,使用3.6kW之磁控管電力及60rpm之鼓18旋轉速率,沉積鋁之5A/rev.之動態速率。對使基板20通過反應區16而言,氧O2 +之反應性流量必須維持在足夠的大小以將沉積之鋁膜轉換成化學計量之Al2O3。依據Al2O3之分子式,需要比鋁多50%以上之O2以完全地反應膜材。例如,5A/rev.之金屬沉積速率相當於在60rpm之鼓18運轉速率之3x1015原子/cm2/sec.之金屬流量。使用具有大約30-60eV/原子之平均能量之類似大小之O2離子化流量。重要的是不超過eV/原子能量的上限太多,因為沉積之膜材的再濺鍍會干擾沉積製程。此外,超越此能量門檻,能量離子會再濺鍍膜材部份,造成非化學計量膜材或植入膜材中,因此造成局部應力之缺陷。此上限係由沉積之特定膜材決定之。 A further example of the settings used by system 10 is the use of a three x x six cathode (the cathode is part of magnetron 22 described below) and applies 900 watts of DC power to magnetron 22, which produces aluminum per second. The deposition rate of 32A (the substrate is in the metallization zone). This is called the "static" deposition rate. Typical metallization zones and substrates produced a "dynamic" deposition rate of 1.15 A/rev. for drum 18 rotation at 60 rpm. If the magnetron 22 power is increased to 1500 watts, the static deposition rate will be approximately 1.66 compared to the rate of 900 watts, resulting in a static deposition rate of 53 A/sec. In one example of system 10, a dynamic rate of 5 A/rev. of aluminum was deposited using a magnetron power of 3.6 kW and a drum 18 rotation rate of 60 rpm. 20 of the substrate 16 through the reaction zone, the oxygen O 2 + the reactive flow must be maintained at sufficient size to deposit the aluminum film is converted into a stoichiometry of Al 2 O 3. According to the molecular formula of Al 2 O 3 , more than 50% more O 2 than aluminum is required to completely react the film. For example, the metal deposition rate of 5 A/rev. corresponds to a metal flow rate of 3 x 10 15 atoms/cm 2 /sec. at a drum 18 operating rate of 60 rpm. A similarly sized O 2 ionization flow rate having an average energy of about 30-60 eV/atom is used. It is important that the upper limit of the eV/atomic energy is not exceeded because the re-sputtering of the deposited film interferes with the deposition process. In addition, beyond this energy threshold, the energy ions will sputter the film portion, causing non-stoichiometric film or implanted into the film, thus causing local stress defects. This upper limit is determined by the specific film deposited.
因為反應區16中之反應時間受限於離子電流或流量,所以重要的是離子源30要儘量靠近基板20。線形離子源可能比沿著鼓18之高度設置之一系列圓形離子源更加靠近於基板20。若使用圓形離子源,此離子源必須配置在基板上方,使得離子源高度及與基板20之分開距離獲致遍及基板皆均勻之流量分佈(其為個別離子源之總和)。例如,大約三呎高度之鼓18,離子源應在基板上方5-8吋。此緊靠對多圓形離子源而言不可能,此乃由於離子束重疊問題之故。對比之下,磁控管22不需要如此地靠近基板20,因為磁控管22可支撐大電力密度。 Since the reaction time in reaction zone 16 is limited by ion current or flow, it is important that ion source 30 be as close as possible to substrate 20. The linear ion source may be closer to the substrate 20 than a series of circular ion sources disposed along the height of the drum 18. If a circular ion source is used, the ion source must be placed above the substrate such that the ion source height and separation distance from the substrate 20 results in a uniform flow distribution across the substrate (which is the sum of the individual ion sources). For example, for a drum 18 of approximately three feet height, the ion source should be 5-8 inches above the substrate. This is not possible for multiple circular ion sources due to ion beam overlap problems. In contrast, the magnetron 22 need not be so close to the substrate 20 because the magnetron 22 can support a large power density.
離子源30對基板20以及擋板38和40對鼓18之緊靠會限制基板20厚度及曲率。在此情形下,鼓18可具有其內容置著基板20之回復加工或凹陷表面。第3圖係顯示具有各基板20之回復加工表面之鼓18。在一實例中,基板20之頂部"媲美"(pound)(例如齊平)於鼓18的表面。鼓形狀之進一步變動被視為係在本發明之範圍內,包含以另一個目標物取代基板以接收金屬膜。 The proximity of the ion source 30 to the substrate 20 and the baffles 38 and 40 against the drum 18 limits the thickness and curvature of the substrate 20. In this case, the drum 18 can have a rest-processed or recessed surface with its contents placed on the substrate 20. Figure 3 shows the drum 18 with the return working surface of each substrate 20. In one example, the top of the substrate 20 is "pound" (eg, flush) to the surface of the drum 18. Further variations in drum shape are considered to be within the scope of the invention, including replacing the substrate with another target to receive the metal film.
膜材沉積之均勻性及應力係藉由調整金屬化區14中之壓力Pa及目標物至基板20之距離或者壓力-距離乘積(P x Tsd)而進一步強化之。調整Tsd係藉由將磁控管22安置在具有調整棒72之凸緣外殼內而促進之,如第4圖所示。調整推動桿棒72,使磁控管22移動更靠近於安置在鼓18上之基板20。在較佳之實施例中,磁控管22包含在目標物78與基板20間之光罩82。陽極76係設置在目標物78與陰極74之間,且設計成在目標物78與基板20間具有小環狀部份。在一實例中,係將陽極偏壓至接地電位,並將與目標物78電氣相通之陰極74偏壓至小於接地電位之負電位。帶正電荷之惰性分子(例如Ar+)會加速朝向帶負電荷之目標物78並撞擊目標物,導致濺鍍。 The uniformity and stress of the film deposition are further enhanced by adjusting the pressure Pa in the metallization zone 14 and the distance from the target to the substrate 20 or the pressure-distance product (P x Tsd). Adjusting the Tsd is facilitated by placing the magnetron 22 within the flange housing having the adjustment rod 72, as shown in FIG. The push rod 72 is adjusted to move the magnetron 22 closer to the substrate 20 disposed on the drum 18. In the preferred embodiment, magnetron 22 includes a reticle 82 between target 78 and substrate 20. The anode 76 is disposed between the target 78 and the cathode 74 and is designed to have a small annular portion between the target 78 and the substrate 20. In one example, the anode is biased to ground potential and the cathode 74 in electrical communication with the target 78 is biased to a negative potential that is less than the ground potential. A positively charged inert molecule (such as Ar+) accelerates toward the negatively charged target 78 and strikes the target, causing sputtering.
為了使用線形磁控管達成基板20上之沉積材料的最佳均勻性,磁控管長度應實質上等於鼓18高度加上兩倍之目標物寬度。例如,若鼓18之高度為一米,且磁控管之寬度為10cm,則磁控管長度應為大約1.2米。在一實例中,選擇流入及流出氣體源24和供應磁控管22之氣 體管線以實質地消除沿著磁控管長度之壓力梯度,因此增加膜材線形均勻性。 In order to achieve optimum uniformity of the deposited material on substrate 20 using a linear magnetron, the magnetron length should be substantially equal to the height of drum 18 plus twice the target width. For example, if the height of the drum 18 is one meter and the width of the magnetron is 10 cm, the length of the magnetron should be about 1.2 meters. In one example, the inflow and outflow of gas source 24 and the supply of magnetron 22 are selected. The bulk line essentially eliminates the pressure gradient along the length of the magnetron, thus increasing the linear uniformity of the film.
在較佳實施例中,使用第5圖所示之光罩82以提昇沉積均勻性。光罩82係插置在磁控管22與基板20之間且成形成解決局部膜材變動。對平坦基板20而言,光罩82對基板20產生濺鍍材料之線形波前。使用光罩之各式各樣的變更以使波前的形狀吻合非平坦基板之表面,例如凸面或凹面基板。第5圖進一步說明剛退出金屬化區14且基板20b係在金屬化區14內之光罩82相對於基板20a的定位。沉積之金屬膜均勻性主要決定反應之膜材均勻性。此乃因為離子源30通常係以飽和模式操作之。換言之,輸送比需要者稍多之電流給離子源30以造成膜材化學計量之飽和。例如,若離子化之反應氣體的電壓保持在充分地低(例如小於100-125eV),則沉積之反應膜材的分子鍵不會斷裂而在反應膜材中保持化學計量。一旦達到化學計量,則膜材穩定。在系統10配置成製造合金之實施例中,係在零動能與小於飽和間之設定操作離子源30以獲得任何組成之膜材。 In the preferred embodiment, the reticle 82 shown in Figure 5 is used to enhance deposition uniformity. The photomask 82 is interposed between the magnetron 22 and the substrate 20 to form a local film variation. For the flat substrate 20, the reticle 82 produces a linear wavefront of the sputter material to the substrate 20. Various variations of the reticle are used to match the shape of the wavefront to the surface of the non-planar substrate, such as a convex or concave substrate. Figure 5 further illustrates the positioning of the reticle 82 just exiting the metallization 14 and the substrate 20b within the metallization 14 relative to the substrate 20a. The uniformity of the deposited metal film mainly determines the uniformity of the film of the reaction. This is because the ion source 30 is typically operated in a saturated mode. In other words, a little more current is delivered to the ion source 30 than necessary to cause saturation of the stoichiometry of the membrane. For example, if the voltage of the ionized reaction gas is kept sufficiently low (e.g., less than 100-125 eV), the molecular bonds of the deposited reaction membrane do not break and remain stoichiometric in the reaction membrane. Once the stoichiometry is reached, the membrane is stable. In embodiments where system 10 is configured to produce an alloy, ion source 30 is operated at a setting between zero kinetic energy and less than saturation to obtain a film of any composition.
在一實施例中,以液體,例如水冷卻轉鼓18而具有施加之RF,DC或脈衝電偏壓以提昇活化或經由再濺鍍有助於具有光微影形體之基板的平坦化。本發明之線形磁控管22可輕易地使其本身適合於隱藏陽極76設計,如第4圖所示。在使用反應性濺鍍之先前解決之道中,陽極亦為基板而變成以絕緣體塗佈之。因此電漿中的電子 不再回到接地電位,而電荷的累積造成電漿散開至基板,尋求回到接地電位的途徑。此時磁控管電漿與基板接觸,其導致非所要之基板加熱。如第4圖所示之隱藏陽極76克服此問題,因為陽極不會以絕緣體塗佈之,而此轉而保持電漿侷限於目標物78,因此減少基板加熱。 In one embodiment, the drum 18 is cooled with a liquid, such as water, with an applied RF, DC or pulsed electrical bias to enhance activation or to facilitate planarization of the substrate having the photolithography via re-sputtering. The linear magnetron 22 of the present invention can be readily adapted to hide the anode 76 design as shown in FIG. In previous solutions using reactive sputtering, the anode was also a substrate and was coated with an insulator. Therefore the electrons in the plasma It no longer returns to the ground potential, and the accumulation of charge causes the plasma to spread out to the substrate, seeking a way back to the ground potential. At this point the magnetron plasma is in contact with the substrate, which causes undesired substrate heating. The hidden anode 76 as shown in Fig. 4 overcomes this problem because the anode is not coated with an insulator, which in turn keeps the plasma confined to the target 78, thus reducing substrate heating.
在先前解決之道中,磁控管22刻意地以不平衡模式操作之。在此模式中,使電漿延伸至基板20,因此從磁控管電漿中之氬離子添加離子以輔助基板。此電漿延伸提供膜材與氣體反應性,然而其與金屬化區組合。在此不平衡構型中,高電力及高膜材沉積速率會在基板溫度及相對應之冷卻要求上設下嚴苛的限制。不像先前解決之道,本發明係以有效之方式分開金屬化區14與反應區16。 In the previous solution, the magnetron 22 was deliberately operated in an unbalanced mode. In this mode, the plasma is extended to the substrate 20, so ions are added from the argon ions in the magnetron plasma to assist the substrate. This plasma extension provides membrane and gas reactivity, however it is combined with a metallization zone. In this unbalanced configuration, high power and high film deposition rates place severe limits on substrate temperature and corresponding cooling requirements. Unlike the previous solution, the present invention separates the metallization zone 14 from the reaction zone 16 in an efficient manner.
在較佳之實施例中,垂直地安置基板20,如第3圖所示,且此時使用線形磁控管22於膜材沉積。在沉積流量下同時在金屬化區14中,基板之垂直線上的每一點花費相同時間,因此實質地消除中心至邊緣之膜材厚度變動或沿著基板20之梯度。被此膜材梯度所妨礙之先前解決之道需要使用△-形磁控管,而以增加之費用及系統複雜性產出均勻膜材。即使是利用△-形磁控管,依然需要光罩以提昇均勻性。本發明中,不存在該種梯度,因此可使用標準線形磁控管與標準目標物。 In the preferred embodiment, substrate 20 is disposed vertically, as shown in FIG. 3, and at this point a linear magnetron 22 is used to deposit the film. Simultaneously in the metallization zone 14 at the deposition flow, each point on the vertical line of the substrate takes the same amount of time, thus substantially eliminating the center-to-edge film thickness variation or gradient along the substrate 20. Previous solutions that were hampered by this film gradient required the use of delta-shaped magnetrons to produce a uniform film with increased cost and system complexity. Even with the use of delta-shaped magnetrons, a mask is needed to improve uniformity. In the present invention, such a gradient does not exist, so a standard linear magnetron and a standard target can be used.
由於金屬化區14與反應區16間之完全分開,系統10以各區間之極小依附性之開放迴路操作之,且沒有反應性濺鍍遲滯的風險,其"毒害"(poison)或氧化金 屬目標物78,結果中斷濺鍍製程。各區之進一步分開避免使用脈衝濺鍍或其他裝置以減少由於目標物毒害的起弧事件的需求,雖然在一實例中使用脈衝濺鍍以提昇賦予膜材性質之目標物的離子化。金屬化區14與反應區16之分開及減少目標物毒害的結果,需要大約一個量級(order)大小之各區間之壓力差動以及大於反應氣體之平均自由途徑之實體分開。在一實例中,金屬化區14具有1x10-3托之壓力Pr,同時反應區16具有1x10-4托之壓力Pr。此壓力差動及平均自由途徑差異提供擴散性氣體屏障以進一步提昇兩個區的隔離。可預想兩區間之更大距離亦可減少壓力差動且壓力差動與實體分開之各種組合係在本發明的範圍內。本發明克服先前解決之道需要涵蓋光學電漿光譜儀或質量流動控制器回饋迴路以控制氣體流動及磁控管電力供應之複雜回饋迴路的限制。 Due to the complete separation between the metallization zone 14 and the reaction zone 16, the system 10 operates with a very small open loop of each zone and has no risk of reactive sputtering lag, its "poison" or oxidized metal target. Event 78, the result is interrupted by the sputtering process. Further separation of the zones avoids the use of pulsed sputtering or other means to reduce the need for arcing events due to target poisoning, although pulse sputtering is used in one example to enhance ionization of the target imparted to the properties of the film. As a result of the separation of the metallization zone 14 from the reaction zone 16 and the reduction of the target poison, it is necessary to separate the pressure differential of each interval of about one order size and the entity of the mean free path of the reaction gas. In one example, the metallization zone 14 has a pressure Pr of 1 x 10 -3 Torr while the reaction zone 16 has a pressure Pr of 1 x 10 -4 Torr. This difference in pressure differential and mean free path provides a diffuse gas barrier to further enhance the isolation of the two zones. It is contemplated that larger distances between the two sections may also reduce pressure differentials and various combinations of pressure differentials and entities are within the scope of the present invention. The present invention overcomes the limitations of previous solutions that require an optical plasma spectrometer or mass flow controller feedback loop to control the complex feedback loop of gas flow and magnetron power supply.
本發明亦克服先前解決之道中需要將磁控管的陰極裝入差動抽氣之圍欄中而非僅將反應區16圈圍在差動抽氣之圍欄中的限制。本方法有利地促成具有多金屬化區之系統,因為僅有一般反應區16被差動抽氣,如第6A及6B圖所示。在第6A圖中,系統90具有具備離子源30之開口92之圍欄12。反應區16裝入圍欄34中且以泵36予以差動抽氣。在第6B圖中,圍欄34包含一對內擋板38及一對外擋板40。差動泵36係位在內擋板38的外部及外擋板40的內部。反應區16係在內擋板38內。 The present invention also overcomes the limitations of the prior art where it is desirable to incorporate the cathode of the magnetron into the differential pumping enclosure rather than merely enclosing the reaction zone 16 in the differential pumping enclosure. The method advantageously facilitates a system having a multi-metallization zone because only the general reaction zone 16 is differentially pumped as shown in Figures 6A and 6B. In Figure 6A, system 90 has a fence 12 having an opening 92 of ion source 30. Reaction zone 16 is loaded into fence 34 and differentially pumped by pump 36. In FIG. 6B, the fence 34 includes a pair of inner baffles 38 and a pair of outer baffles 40. The differential pump 36 is positioned outside the inner baffle 38 and inside the outer baffle 40. Reaction zone 16 is within inner baffle 38.
選擇泵36及擋板38和40,使得反應區16 外部的壓力(反應區16與金屬化區14之間)降低至實質上小於反應區16之壓力,例如1x10-5托。在此情形下,若反應區16外部的壓力為Pr且擋板的傳導性為Cb(以托-升/sec量度之)及圍欄34外部降低的壓力為Po,則泵36的速度係以方程式S泵=(Pr-Po)/Cb計算之。藉由圈圍反應區16且與系統之其餘部份分開地差動抽氣此區,減小泵尺寸及系統尺寸,可使目標物與離子源更鬆散地耦合。 Pump 36 and baffles 38 and 40 are selected such that the pressure outside reaction zone 16 (between reaction zone 16 and metallization zone 14) is reduced to substantially less than the pressure of reaction zone 16, such as 1 x 10 -5 Torr. In this case, if the pressure outside the reaction zone 16 is Pr and the conductivity of the baffle is Cb (measured in Torr-liter/sec) and the pressure reduced outside the fence 34 is Po, the speed of the pump 36 is in the equation S pump = (Pr-Po) / Cb calculated. By encircling the reaction zone 16 and separately pumping this zone separately from the rest of the system, the pump size and system size are reduced, allowing the target to be more loosely coupled to the ion source.
在一較佳實施例中,反應區16包含位在內擋板38間之額外泵112,如第7A及7B圖所示。利用增加泵112,可移動擋板38及40更靠近於鼓18以改善反應氣體與系統之其餘部份的隔離。在另一實施例中,移動一對內擋板38更靠近於鼓18並移動一對外擋板40進一步遠離鼓18,使得提供反應氣體之差動減少之差動泵36此時亦可使用於自金屬化區對惰性氣體抽氣,因此消除第2圖所示之泵52的需求。泵112的速度受限於由外擋板40及泵112之速度所產生之孔隙的傳導性。 In a preferred embodiment, reaction zone 16 includes an additional pump 112 positioned between inner baffles 38, as shown in Figures 7A and 7B. With the addition of pump 112, movable baffles 38 and 40 are closer to drum 18 to improve isolation of the reactive gases from the rest of the system. In another embodiment, moving the pair of inner baffles 38 closer to the drum 18 and moving the outer baffle 40 further away from the drum 18, so that the differential pump 36 providing differential reduction of the reactive gas can be used at this time. The inert gas is evacuated from the metallization zone, thus eliminating the need for the pump 52 shown in Figure 2. The speed of the pump 112 is limited by the conductivity of the apertures created by the velocity of the outer baffle 40 and the pump 112.
利用第7A及7B圖所示之反應氣體之改善隔離,線形磁控管22可位在進一步遠離基板20,如第8A圖所示。此有利地進一步減少基板20上之顆粒。由於惰性氣體局部地導入磁控管22內,使得經由其使惰性氣體抽氣之開放區域有效地為具有傳導性Ca之濺鍍孔隙。 With the improved isolation of the reactive gases shown in Figures 7A and 7B, the linear magnetron 22 can be positioned further away from the substrate 20, as shown in Figure 8A. This advantageously further reduces the particles on the substrate 20. Since the inert gas is locally introduced into the magnetron 22, the open region through which the inert gas is evacuated is effectively a sputtering void having a conductive Ca.
第8B圖係顯示金屬化區14之實施例,其中來自磁控管22之電漿係由一對內擋板142予以實質地侷限。第8C圖係顯示金屬化區14之一較佳實施例,其中, 電漿係由孔隙遮蔽26所形成之孔隙27予以侷限。若此濺鍍前廊26中之壓力固定在壓力Pa及假設主泵52速度比差動泵36之速度高甚多且主泵52具有速度P速度,則可計算孔隙之大小以維持Pa。孔隙板與基板容置器(例如鼓)18之距離亦對積聚在前廊26中之壓力有貢獻。 Figure 8B shows an embodiment of the metallization region 14 in which the plasma from the magnetron 22 is substantially confined by a pair of inner baffles 142. Figure 8C shows a preferred embodiment of the metallization region 14, wherein the plasma is limited by the apertures 27 formed by the aperture shields 26. If the pressure in the sputter front gallery 26 is fixed at the pressure Pa and assuming that the main pump 52 is at a much higher speed than the differential pump 36 and the main pump 52 has a speed P speed , the size of the aperture can be calculated to maintain Pa. The distance of the aperture plate from the substrate holder (e.g., drum) 18 also contributes to the pressure build up in the front porch 26.
金屬化區14中之沉積之垂直方位有利地減少降落在基板20上之顆粒的可能性。不像使用向下面向沉積之先前解決之道,關閉系統作為維護之用的需求減少且消除使用全面侵蝕目標物以使目標物再沉積最小化。使用於先前解決之道之△磁控管具有長曲折非濺鍍區,其變成與再沉積膜材飽和之。由於應力,此膜材會隨著時間"剝落",其大大地有助於非所要之顆粒到達基板20。藉由使用其再沉積區域實質地小於△磁控管者之線形磁控管22,減少厚塗層中之顆粒。 The vertical orientation of the deposition in the metallization region 14 advantageously reduces the likelihood of particles falling on the substrate 20. Unlike prior solutions using down-facing deposition, the need to shut down the system for maintenance is reduced and the use of a comprehensive erosion target is eliminated to minimize target redeposition. The Δ magnetron used in the previous solution has a long meandering non-sputtering zone which becomes saturated with the redeposited film. Due to the stress, the film "skins off" over time, which greatly aids in the undesirable particles reaching the substrate 20. The particles in the thick coating are reduced by using a linear magnetron 22 whose re-deposited area is substantially smaller than the Δ magnetron.
具有單層沉積,且高速度通過具有惰性氣體之區及後續轉換成緻密化學計量反應層之系統10的進一步優點為顯著減少基板20中之惰性氣體。藉由減少基板20中之惰性氣體(例如氬氣),大大地減少缺陷引發之應力變動。然後以由於離子源被稱為原子錘擊之製程藉由膜材緻密化控制反應膜材應力。藉由控制原子/離子比率(例如金屬原子流量對離子流量比率)及在表面之離子的動量交換達成應力控制。藉由控制磁控管22電力,陽極76電流及陽極76電壓,膜材應力可變化或控制,或者磁控管22電力,陽極76電流及陽極76電壓可維持恆定,再藉由改 變鼓18旋轉速度而控制每一轉之鼓18之原子/離子比率及金屬速率。 A further advantage of having a single layer of deposition, and a high velocity through the zone of inert gas and subsequent conversion to a dense stoichiometric reaction layer 10 is to significantly reduce the inert gas in the substrate 20. By reducing the inert gas (e.g., argon) in the substrate 20, the stress variation caused by the defects is greatly reduced. The reaction film stress is then controlled by film densification by a process known as atomic hammering of the ion source. Stress control is achieved by controlling atomic/ion ratios (e.g., metal atomic flow versus ion flow ratio) and momentum exchange of ions at the surface. By controlling the magnetron 22 power, the anode 76 current and the anode 76 voltage, the film stress can be varied or controlled, or the magnetron 22 power, the anode 76 current and the anode 76 voltage can be maintained constant, and then by changing The drum 18 is rotated at a speed to control the atom/ion ratio and metal rate of the drum 18 for each revolution.
在一實施例中,將第二磁控管加入系統10中以在基板20上形成高及低指數金屬氧化物層以製造高品質光學塗層。例如,一磁控管中之矽目標物及第二磁控管中之鉭目標物可提供包含抗反射,帶狀韌皮(band bass)及阻擋塗層之任何數目之SiO2/Ta2O5光學塗層。藉由帶柵門之光學監視器可輕易地監控最佳化層之形成。其他實施例使用超過兩個磁控管以提供又更複雜之結構。在另一實施例中,使用各具有其本身之金屬目標物且反應區16中之反應氣體以氬氣取代之兩個磁控管,從X-光鏡之低Z材料快速地形成精準之金屬多層膜材。 In one embodiment, a second magnetron is added to system 10 to form a high and low index metal oxide layer on substrate 20 to produce a high quality optical coating. For example, a target in a magnetron and a target in the second magnetron can provide any number of SiO 2 /Ta 2 O including anti-reflection, band batter and barrier coating. 5 optical coating. The formation of the optimized layer can be easily monitored by an optical monitor with a gate. Other embodiments use more than two magnetrons to provide a more complex structure. In another embodiment, the precise metal is rapidly formed from the low Z material of the X-ray mirror using two magnetrons each having its own metal target and the reaction gas in the reaction zone 16 is replaced by argon gas. Multilayer film.
在多層塗層之另一實施例中,額外(例如第二或更多)之磁控管安置在單一貼附之前廊26內。使用額外之磁控管且以馬達控制器指示之。以此方式,利用磁控管A沉積層A,然後暫停,之後在孔隙前之位置旋轉磁控管B,對磁控管B施加電力再沉積膜材B。此實施例之多目標物濺鍍系統大大地減少機械足跡及擁有者的成本。 In another embodiment of the multilayer coating, an additional (e.g., second or more) magnetron is disposed within the single attachment front porch 26. Use an additional magnetron and indicate it with the motor controller. In this way, layer A is deposited using magnetron A, then paused, and then magnetron B is rotated at the position before the aperture, and electric power is applied to magnetron B to redeposit film B. The multi-target sputtering system of this embodiment greatly reduces the mechanical footprint and cost to the owner.
在另一實施例中,在不同氣體間脈動地調節或交替地調節氣體源32以形成膜材之不同組合。例如,使用矽目標物,依序地使用O2及N2反應氣體以製造SiN及SiO2層。或者,使用O2/N2混合物以形成SiONx材料。 In another embodiment, the gas source 32 is pulsatingly or alternately adjusted between different gases to form different combinations of membrane materials. For example, using a ruthenium target, O 2 and N 2 reaction gases are sequentially used to produce SiN and SiO 2 layers. Alternatively, an O 2 /N 2 mixture is used to form the SiON x material.
設置在磁控管濺鍍源前之孔隙27,如第1圖所示,可具有許多不同功能。例如,孔隙可使濺鍍氣體(如 氬氣)的壓力積聚在磁控管前廊中(在某些實施例中,濺鍍氣體可直接進料至磁控管前廊中)。該種壓力梯度可促成反應區(例如,上述之氧化區)之濺鍍區的遮蔽(隔離),其可轉而減少,較佳消除被反應氣體,如氧氣污染濺鍍目標物。 The aperture 27 disposed in front of the magnetron sputtering source, as shown in Figure 1, can have many different functions. For example, pores can cause sputtering gases (such as The pressure of argon gas accumulates in the magnetron front porch (in some embodiments, the sputtering gas can be fed directly into the magnetron front porch). This pressure gradient can contribute to the shielding (isolation) of the sputtering zone of the reaction zone (e.g., the oxidation zone described above), which can be reduced, preferably to eliminate contamination of the target by reactive gases such as oxygen.
在某些實施例中,沒有對磁控管前廊直接施加抽氣。在該些實施例中,可旋轉支架(例如,上述之鼓)的間隔和孔隙以及孔隙大小結合室泵(例如,第2圖所示之泵52)的抽氣速度可決定磁控管前廊中之濺鍍氣體(例如,氬氣)上的抽氣速度,因此決定磁控管前廊內積聚之壓力度。 In some embodiments, no pumping is applied directly to the magnetron front porch. In such embodiments, the spacing and aperture of the rotatable mount (eg, the drum described above) and the pore size combined with the pumping speed of the chamber pump (eg, pump 52 shown in FIG. 2) may determine the magnetron front porch The rate of pumping on the sputtering gas (e.g., argon), thus determining the amount of pressure build up in the front porch of the magnetron.
舉例而言,在某些實施例中,其中,濺鍍氣體為氬氣及反應氣體為氧氣,孔隙可使高氬氣壓力積聚在濺鍍目標物(陰極)上。例如,若以10毫托進行濺鍍且離子源中之氧氣(O2)壓力為2x10-3托,則可在濺鍍源與離子源之間(例如,濺鍍區與反應區之間)發展出大於10之壓力梯度,因此抑制反應離子,例如,氧離子,滲入濺鍍區。 For example, in some embodiments, wherein the sputtering gas is argon and the reactive gas is oxygen, the pores can accumulate high argon pressure on the sputtering target (cathode). For example, if sputtering is performed at 10 mTorr and the oxygen (O 2 ) pressure in the ion source is 2 x 10 -3 Torr, it can be between the sputtering source and the ion source (for example, between the sputtering zone and the reaction zone). A pressure gradient greater than 10 is developed, thus inhibiting reactive ions, such as oxygen ions, from penetrating into the sputtering zone.
此外,濺鍍區與反應區的空間分開可彼此進一步遮蔽此兩區,因此抑制其間之交叉污染。例如,在本發明之某些實施例中,產生反應離子(例如,O2離子)之離子源係設置在相反於濺鍍源的位置,使得離子源係圍繞著相對於濺鍍源之可旋轉支架的周邊以180°角度地分開。在某些該種實施例中,離子源可包含其中可進料反應氣體如O2之前廊。 Furthermore, the separation of the sputter zone from the space of the reaction zone can further shield the two zones from each other, thus inhibiting cross-contamination therebetween. For example, in some embodiments of the invention, an ion source that produces reactive ions (eg, O 2 ions) is disposed at a location opposite the sputtering source such that the ion source is rotatable relative to the sputtering source. The perimeter of the stent is angularly separated by 180°. In certain such embodiments, the ion source can comprise a reaction chamber in which a reactive gas such as O 2 can be fed.
圍繞著磁控管及孔隙之圍欄提供另一個優 點,也就是若任何反應氣體如O2,發現其進入磁控管圍欄的路,則其可藉由向前之濺鍍流量而快速地吸氣至圍欄及/或孔隙板之周圍壁。換言之,滲入之反應氣體可有效地抽離。 Another advantage is provided around the fence of the magnetron and the pores, that is, if any reactive gas such as O 2 is found to enter the path of the magnetron fence, it can be quickly aspirated by the forward sputtering flow. To the surrounding walls of the fence and / or the aperture plate. In other words, the infiltrated reaction gas can be effectively extracted.
在某些實施例中,如第9圖所示,依據本發明之產生氧化物塗層之系統900包含設置在濺鍍源902,例如,磁控管(在此圖式中,未繪出反應區)前之可移動孔隙901a。在此實施例中,孔隙901a為形成在孔隙板901內之矩形開口形式。孔隙901a可作為圍繞著磁控管之圍欄(前廊)904之輸出開口。在某些實施例中,圍欄本身可包含經由其金屬原子可退出圍欄之開口,且孔隙901a可放置在此開口前,較佳隨其實質標示之。可移動孔隙901a可配置成沿著軸向線形地向後及向前移動,其可相對應於由濺鍍源所產生之金屬原子流量的中心軸且朝向孔隙前進。類似於前述實施例,系統900包含其上可安置複數個基板903之可旋轉支架902'。在此實施例中,基板係安置在可旋轉支架上,使得當各基板與孔隙901a對準時,此軸向垂直於基板表面。 In some embodiments, as shown in FIG. 9, the system 900 for producing an oxide coating according to the present invention comprises a sputtering source 902, such as a magnetron (in this figure, a reaction is not depicted). Zone) the front movable aperture 901a. In this embodiment, the aperture 901a is in the form of a rectangular opening formed in the aperture plate 901. The aperture 901a can serve as an output opening around the fence (front porch) 904 of the magnetron. In some embodiments, the fence itself may include an opening through which the metal atoms may exit the fence, and the aperture 901a may be placed before the opening, preferably as substantially marked. The movable aperture 901a can be configured to move rearwardly and forwardly along the axial direction, which can correspond to the central axis of the flow of metal atoms generated by the sputtering source and toward the aperture. Similar to the previous embodiment, system 900 includes a rotatable mount 902' on which a plurality of substrates 903 can be placed. In this embodiment, the substrate is disposed on the rotatable support such that when the substrates are aligned with the apertures 901a, the axial direction is perpendicular to the substrate surface.
可使用各式各樣的機制使孔隙板相對於濺鍍源及可旋轉支架移動。舉例而言,在此實施例中,濺鍍源(例如,磁控管)被圈圍在圍欄904內。一系列線形動作饋入裝置905耦合於孔隙板901。各線形動作饋入裝置905包含外部旋轉旋鈕905a,其係在圍欄904之外部(在此實施例中,係在真空室外部),其可例如,手動地或藉由馬達予 以旋轉。耦合器905b使旋鈕之旋旋轉作耦合於內部棒桿905c,其係位在圍欄內且以其遠端耦合於孔隙板,再將旋鈕之外部截面之旋旋轉作轉換成內部棒桿905c之線形動作,其轉而造成孔隙板之線形移動以及由而孔隙之線形移動。可使用各式各樣市售之線形動作饋入裝置,如那些由美國加州Haywood之MDC公司行銷者。在此實施例中,使用四個線形動作饋入裝置,雖然第9圖僅示出兩個。 A variety of mechanisms can be used to move the aperture plate relative to the sputter source and the rotatable mount. For example, in this embodiment, a sputter source (eg, a magnetron) is enclosed within a fence 904. A series of linear motion feedthroughs 905 are coupled to the aperture plate 901. Each linear action feedthrough 905 includes an external rotary knob 905a that is external to the fence 904 (in this embodiment, outside the vacuum chamber), which may be, for example, manually or by motor To rotate. The coupler 905b couples the rotary rotation of the knob to the inner rod 905c, which is fastened in the fence and coupled to the aperture plate at its distal end, and then rotates the outer section of the knob into a linear shape of the inner rod 905c. The action, which in turn causes a linear movement of the aperture plate and a linear movement of the aperture. A wide variety of commercially available linear motion feed devices can be used, such as those marketed by MDC Corporation of Haywood, California. In this embodiment, four linear motion feed devices are used, although Figure 9 shows only two.
可移動之孔隙可調整濺鍍源前廊(腔室)904內之壓力,例如,其可在磁控管的周圍形成圍欄。例如,對至濺鍍源前廊中之濺鍍氣體(如氬氣)之既定流動速率而言,孔隙愈接近於濺鍍源,則腔室內之氣體的壓力愈高。濺鍍源前廊內之壓力的變動可使用於調節濺鍍在基板上之金屬膜的應力,例如,從可壓縮至可拉伸之應力。例如,在某些實施例中,在非常低壓力(例如,0.75至2毫托之壓力)時濺鍍之金屬膜的應力可被壓縮而在高壓力(例如,大於30毫托之壓力)時應力可被拉伸。 The movable aperture can adjust the pressure within the sputter source front gallery (chamber) 904, for example, it can form a fence around the magnetron. For example, for a given flow rate to a sputtering gas (such as argon) in the front gallery of the sputtering source, the closer the pores are to the sputtering source, the higher the pressure of the gas within the chamber. Variations in the pressure in the front gallery of the sputter source can be used to adjust the stress of the metal film sputtered onto the substrate, for example, from compressible to stretchable stress. For example, in certain embodiments, the stress of a sputtered metal film can be compressed at very low pressures (eg, a pressure of 0.75 to 2 mTorr) at high pressures (eg, pressures greater than 30 mTorr) The stress can be stretched.
在用於產生塗層之習知離子輔助濺鍍系統中,濺鍍氣體與反應氣體係在單一腔室中彼此相通。結果,可能無法在其整個個別操作範圍上改變濺鍍源與離子源的操作壓力。例如,在其中磁控管中之濺鍍氣體的壓力可被改變之整個範圍上,離子源(例如,O2離子源)可能無法良好地進行之。例如,在許多情形下,離子源的最大操作壓力可為約1毫托,其小於磁控管的最大操作壓力,例如,30至50毫托。在依據本發明之系統中,由於濺鍍源與反 應離子源隔離,故濺鍍源(例如,磁控管)的壓力與離子源的壓力可獨立地改變之。例如,濺鍍源的壓力可在其整個操作範圍上改變,沒有負面地影響離子源的操作。舉例而言,在本發明之某些實施例中,可移動孔隙係設置在濺鍍磁控管的前面(參見,例如,第9圖),磁控管的壓力(例如,磁控管前廊內的壓力)可藉由移動孔隙板(由而孔隙)靠近或遠離可旋轉支架(其減少或增加施加至磁控管前廊的抽氣速度,伴隨濺鍍氣體(例如,氬氣)壓力的增加或減少)而以濺鍍氣體(例如,氬氣)之恆定流動速率在其整個操作範圍上改變之。磁控管前廊壓力之此改變對離子源之操作無有害之影響,此乃由於其與磁控管隔離之故。 In a conventional ion assisted sputtering system for producing a coating, the sputtering gas and the reactive gas system are in communication with each other in a single chamber. As a result, it may not be possible to vary the operating pressure of the sputtering source and the ion source over its entire individual operating range. For example, in an entire range in which the pressure of the sputtering gas in the magnetron can be changed, the ion source (for example, an O 2 ion source) may not perform well. For example, in many cases, the maximum operating pressure of the ion source can be about 1 mTorr, which is less than the maximum operating pressure of the magnetron, for example, 30 to 50 mTorr. In the system according to the present invention, since the sputtering source is isolated from the reactive ion source, the pressure of the sputtering source (e.g., magnetron) and the pressure of the ion source can be independently varied. For example, the pressure of the sputter source can vary over its entire operating range without negatively affecting the operation of the ion source. For example, in some embodiments of the invention, the movable aperture is disposed in front of the sputter magnetron (see, eg, Figure 9), the magnetron pressure (eg, magnetron front porch) The pressure inside can be moved by the moving aperture plate (by the aperture) close to or away from the rotatable support (which reduces or increases the pumping speed applied to the magnetron front porch, with the pressure of the sputtering gas (eg argon)) Increasing or decreasing) and varying the flow rate of the sputtering gas (eg, argon) over its entire operating range. This change in the magnetron front porch pressure has no detrimental effect on the operation of the ion source due to its isolation from the magnetron.
在某些實施例中,濺鍍氣體壓力與反應氣體壓力的獨立控制可獨立地調整濺鍍區中所產生之濺鍍金屬膜的應力與反應區中經由金屬膜的氧化反應所產生之氧化物膜的應力。例如,在某些實施例中,金屬膜可以拉伸,可壓縮或中性應力狀態沉積至基板上。然後反應離子源(例如,O2離子源)的壓力可控制在以所要之應力狀態產生金屬氧化物。換言之,金屬與氧化物膜的應力可予以分別地調整以在所得之金屬氧化物膜(例如,氧化鋁膜)之應力的調整上具有前所未有的控制。例如,若金屬膜以可壓縮狀態濺鍍在基板上,則反應離子源的壓力可調整成以淨零應力產生金屬氧化物膜。通常,隨著離子能量增加,所產生之金屬氧化物膜的可壓縮應力亦隨之增加。舉例而言,若金屬膜係在濺鍍相期間以拉伸應力狀態產生,則反應相期間 之反應離子(例如,O2離子)的能量會增加而抵銷拉伸應力,以產生具有些微可壓縮應力或中性應力之金屬氧化物膜。在某些實施例中,反應離子(例如,O2離子)的能量可在約65至150eV之範圍。 In some embodiments, the independent control of the sputtering gas pressure and the reaction gas pressure independently adjusts the stress of the sputtered metal film generated in the sputtering zone and the oxide generated by the oxidation reaction of the metal film in the reaction zone. The stress of the membrane. For example, in certain embodiments, the metal film can be deposited onto the substrate in a stretchable, compressible or neutral stress state. The pressure of the reactive ion source (e.g., O 2 ion source) can then be controlled to produce a metal oxide in the desired stress state. In other words, the stress of the metal and oxide film can be separately adjusted to have an unprecedented control over the adjustment of the stress of the resulting metal oxide film (e.g., aluminum oxide film). For example, if the metal film is sputtered onto the substrate in a compressible state, the pressure of the reactive ion source can be adjusted to produce a metal oxide film with a net zero stress. Generally, as the ion energy increases, the compressive stress of the resulting metal oxide film also increases. For example, if the metal film is generated in a tensile stress state during the sputtering phase, the energy of the reactive ions (eg, O 2 ions) during the reaction phase may increase to offset the tensile stress to produce a slight A metal oxide film that compresses stress or neutral stress. In certain embodiments, the energy of the reactive ions (eg, O 2 ions) can range from about 65 to 150 eV.
在某些實施例中,依據本發明之系統促使基於沉積之金屬膜所要之應力調整濺鍍氣體(例如,氬氣)的壓力。在某些實施例中,濺鍍氣體(例如,氬氣)的壓力可經由製程循環(或其至少一部份)在濺鍍前廊中脈動地調節以平均金屬膜應力。例如,磁控管前廊內之氬氣壓力可在不同之濺鍍循環期間改變,因為安置在可旋轉支架上之基板通過濺鍍區多次以得到所要之平均金屬應力。在某些實施例中,可調整濺鍍壓力以賦予金屬膜拉伸應力。換言之,金屬膜會因拉伸應力而偏差。由於如上所述般,離子源可與濺鍍源獨立地操作,離子源,包含反應氣體的壓力及反應離子的能量可鑑於金屬膜的偏差拉伸應力而裝配以將所得之金屬氧化物膜的應力調整至所要之值。例如,離子源可被裝配成使金屬膜偏向較小之拉伸狀態,其與由濺鍍源所提供之拉伸偏差組合,可導致具有中性或些微地可壓縮之應力狀態之金屬氧化物膜。所得之金屬氧化物膜之該種應力調整在各種應用上具有好處,包含在撓曲性基板,如塑膠基板上沉積金屬氧化物膜(例如,氧化鋁)。 In certain embodiments, the system in accordance with the present invention causes the pressure of the sputtering gas (e.g., argon) to be adjusted based on the desired stress of the deposited metal film. In some embodiments, the pressure of the sputtering gas (eg, argon) may be pulsatingly adjusted to average metal film stress in the sputtering front gallery via the process cycle (or at least a portion thereof). For example, the argon pressure in the magnetron front porch can be varied during different sputtering cycles because the substrate placed on the rotatable support passes through the sputter zone multiple times to achieve the desired average metal stress. In some embodiments, the sputtering pressure can be adjusted to impart tensile stress to the metal film. In other words, the metal film is deviated by the tensile stress. Since the ion source can be operated independently of the sputtering source as described above, the ion source, the pressure including the reaction gas, and the energy of the reactive ions can be assembled in view of the tensile stress of the metal film to assemble the resulting metal oxide film. The stress is adjusted to the desired value. For example, the ion source can be assembled to bias the metal film to a lesser stretched state, which, in combination with the tensile bias provided by the sputtering source, can result in a metal oxide having a neutral or slightly compressible stress state. membrane. This stress adjustment of the resulting metal oxide film has benefits in a variety of applications, including depositing a metal oxide film (e.g., aluminum oxide) on a flexible substrate, such as a plastic substrate.
在某些實施例中,使用於依據本發明之系統中之孔隙,固定或可移動孔隙,可使用於瞄準濺鍍原子。舉例而言,再度參照第9圖,孔隙901a可相對於磁控管移 動使得通過孔隙到達基板之原子的最大發散小於所要之門檻。所發射出之濺鍍原子之流量之角向分佈的特徵為正弦曲線函數。例如,所發射出之流量的特徵可為=Cosn,其中表示在相對於流量之中心軸(例如,第9圖所繪出之軸向)之角度(其可垂直於引導原子於其上之基板)濺鍍原子的流量。對較大值之n(例如,n大於約3)而言,流量更趨向於聚集,而對小值之n(例如,n等於小於約3)而言,流量擴散或"壓扁"。 In some embodiments, the apertures, fixed or movable apertures used in the system according to the invention can be used to target sputtering atoms. For example, referring again to Figure 9, the aperture 901a is movable relative to the magnetron such that the maximum divergence of atoms passing through the aperture to the substrate is less than the desired threshold. The angular distribution of the flow of the sputtered atoms emitted is characterized by a sinusoidal function. For example, the emitted flow may be characterized by =Cos n , which represents the angle relative to the central axis of the flow (eg, the axial direction depicted in Figure 9) (which may be perpendicular to the leading atom) Substrate) The flow rate of the sputtered atoms. For larger values of n (eg, n is greater than about 3), the flow tends to concentrate more, while for small values of n (eg, n is less than about 3), the flow spreads or "squashed."
參照第10圖,沒有孔隙901a,以相對於垂直於基板之大角度(例如,角度θ1及θ2)發射出之某些原子會以高入射光柵角度撞擊基板。以高光柵角度撞擊基板表面之原子易於不良地貼附於基板表面。利用在恰當位置之孔隙板901,這些離位原子撞擊孔隙板,因此被阻止到達基板。更明確地說,在此實施例中,以大於θ3之角度發射出之原子撞擊孔隙板之內表面,因此無法到達基板。換言之,在此實施例中,孔隙藉由確保通過孔隙之所發射出之原子的最大發散為θ3,而降低原子之角向分佈之擴散。藉由沿著垂直於基板之方向移動孔隙,可調整所發射出之原子的最大角向分佈。由於所發射出之原子之角向分佈的擴散窄化,離開孔隙的原子數目減少,因此降低基板上之原子的沉積速率。此會對所發射出之原子之角向分佈的最小擴散加上實際的限制。在某些實施例中,使孔隙板位在可使當其退出孔隙時所發射出之原子之最大發散角度,亦即,θ3,在約10至約30度之範圍。在某些實施例中,可 放置一連串複數個孔隙(例如,2至5個孔隙)相對於彼此隔開以調整所發射出之原子之角向擴散,而非單一孔隙。在某些實施例中,使用複數個孔隙可進一步減少所發射出之原子之角向擴散,超越使用單一孔隙所能實際達到之程度。 Referring to Fig. 10, without the aperture 901a, certain atoms emitted at a large angle (e.g., angles θ 1 and θ 2 ) perpendicular to the substrate will strike the substrate at a high incident grating angle. The atoms striking the surface of the substrate at a high grating angle are liable to be poorly attached to the surface of the substrate. With the aperture plate 901 in place, these vacant atoms impinge on the aperture plate and are thus prevented from reaching the substrate. More specifically, in this embodiment, atoms emitted at an angle greater than θ 3 strike the inner surface of the aperture plate and thus cannot reach the substrate. In other words, in this embodiment, the pores reduce the diffusion of the angular distribution of the atoms by ensuring that the maximum divergence of atoms emitted through the pores is θ 3 . The maximum angular distribution of the emitted atoms can be adjusted by moving the apertures in a direction perpendicular to the substrate. As the diffusion of the angular distribution of the emitted atoms narrows, the number of atoms leaving the pores decreases, thereby reducing the deposition rate of atoms on the substrate. This adds a practical limit to the minimum spread of the angular distribution of the emitted atoms. In some embodiments, the aperture plate is positioned at a maximum divergence angle of atoms that can be emitted as it exits the aperture, i.e., θ 3 , in the range of from about 10 to about 30 degrees. In some embodiments, a series of plurality of pores (eg, 2 to 5 pores) may be placed spaced apart from each other to adjust the angular diffusion of the emitted atoms rather than a single pore. In some embodiments, the use of a plurality of apertures further reduces the angular spread of the emitted atoms beyond what is actually achievable using a single aperture.
藉由使用各式各樣的不同方法可將孔隙板設計成得到所發射出之原子之所要的瞄準,亦即,原子之所要角向擴散的特徵在於最大發散角度。例如,在某些實施例中,針孔方法可使用於測量特定磁控管之陰極流量的角向分佈。所測得之角向分佈和陰極與孔隙之既定分離可一起使用於設計平面尺寸板。關於針孔方法之進一步細節可見述於J.A,Thornton and D.W.Hoffman JVST 18,2,3月1981,其整體併入本文列為參考。在某些情形下,經由測量所得到之尺寸可藉由其中慮及孔隙之傳導性,前廊內之氣體相散射,及孔隙與可旋轉支架之距離之理論模型予以進一步最佳化。 The aperture plate can be designed to achieve the desired aiming of the emitted atoms by using a variety of different methods, i.e., the angular spread of the atoms is characterized by a maximum divergence angle. For example, in some embodiments, the pinhole method can be used to measure the angular distribution of the cathode flow of a particular magnetron. The measured angular distribution and the established separation of the cathode from the pores can be used together to design a planar size plate. Further details regarding the pinhole method can be found in J. A, Thornton and D. W. Hoffman JVST 18, 2, March 1981, which is incorporated herein by reference in its entirety. In some cases, the size obtained by measurement can be further optimized by taking into account the conductivity of the pores, the gas phase scattering in the front porch, and the theoretical model of the distance between the pores and the rotatable scaffold.
使用依據本發明之孔隙瞄準從濺鍍目標物所發射出之原子可提供許多好處。在某些應用上,該種瞄準可提供微電子結構之平坦化之改良結果。例如,使用非依據本發明瞄準之發射出之原子使孔道或溝槽平坦化或填補,會導致孔道頂部上之原子沉積繞著開口的邊緣,因此導致孔道頂部之掐掉(撕開效應)(tear drop effect),其會妨礙孔道底部的填充,如第11A圖所示。相反地,在濺鍍目標物,例如,孔道或溝槽的前面使用孔隙,可導致濺鍍原子之更均勻的沉積。尤其,在濺鍍基板的前面加上孔隙 可大大地減少高角度入射原子到達基板。在某些實施例中,使用放置成一連串且以預定距離(諸距離)相對於彼此隔開之複數個孔隙可幾乎完全地移除來自濺鍍流量之高角度入射原子。換言之,使用瞄準,相對於垂直於基板的方向入射以高角度傳送之金屬原子可被消除。特徵為相對於一般者較小入射角度之角向分佈內之金屬原子的到達可完全填充孔道或溝槽,如第11B圖所示。經填充之孔道或溝槽可,例如,藉由化學機械平坦化予以後續地平坦化。 The use of apertures in accordance with the present invention to target atoms emitted from a sputter target provides a number of benefits. In some applications, this aiming can provide improved results in the planarization of the microelectronic structure. For example, the use of atoms that are not emitted in accordance with the present invention to planarize or fill the cells or trenches results in atomic deposition on the top of the cells around the edges of the openings, thereby causing the top of the cells to collapse (the tearing effect) ( Tear drop effect), which will hinder the filling of the bottom of the tunnel, as shown in Figure 11A. Conversely, the use of voids in front of a sputter target, such as a channel or trench, can result in a more uniform deposition of sputtered atoms. In particular, adding a hole in front of the sputtered substrate The high angle incident atoms can be greatly reduced to reach the substrate. In some embodiments, high angle incident atoms from the sputter flow rate can be removed almost completely using a plurality of apertures placed in a series and spaced apart from one another by a predetermined distance (distances). In other words, with aiming, metal atoms that are incident at a high angle with respect to a direction perpendicular to the substrate can be eliminated. The arrival of metal atoms in the angular distribution relative to the smaller incident angle of the general can completely fill the channels or trenches, as shown in FIG. 11B. The filled channels or trenches can be subsequently planarized, for example, by chemical mechanical planarization.
如上所述,依據本發明之金屬濺鍍區與反應區的隔離提供許多優點。如下文所詳述,兩區之該種隔離的另一個優點為其可大大地減少,在某些情形下消除,濺鍍氣體(亦即濺鍍前廊中之氣體)植入所得之金屬氧化物(該濺鍍氣體通常為氬氣,雖然可能使用其他惰性氣體,如氖氣或氙氣)的可能性。此轉而降低,在某些情形下消除,所得之金屬氧化物膜(塗層)被濺鍍氣體,例如,氬氣污染。已知在濺鍍在基板上之金屬膜中包含雜質會導致在該些膜材中有可壓縮應力之成分,特別是在較高之陰極電壓時。在許多情形下,濺鍍雜質為氬氣原子。尤其,在低濺鍍壓力(例如,約0.5至約5毫托之壓力)時,於陰極之全電位中性氬氣原子會反射出陰極,而可植入基板中以造成可壓縮應力。在較高濺鍍壓力時,有一些可能性是濺鍍氣體(例如,氬氣)植入下面之活性成長層中。藉由利用本發明之教示,特別是藉由濺鍍源與離子源之隔離,可減少,較佳消除所得之金屬氧化物膜中之可壓縮應力之此成分。再者, 離子源可使用於以可重複且可控制之方式,例如,以上述之方式控制金屬氧化物膜中之應力。 As noted above, the isolation of the metal sputter zone from the reaction zone in accordance with the present invention provides a number of advantages. As described in more detail below, another advantage of this type of isolation between the two zones is that it can be greatly reduced, in some cases eliminating the oxidation of the metal from the sputtering gas (ie, the gas in the front of the sputtering front). (The sputtering gas is usually argon, although other inert gases such as helium or neon may be used). This is in turn reduced, and in some cases eliminated, the resulting metal oxide film (coating) is contaminated with a sputtering gas, such as argon. It is known that the inclusion of impurities in a metal film sputtered onto a substrate results in a compressive stress component in the film, particularly at higher cathode voltages. In many cases, the sputter impurity is an argon atom. In particular, at low sputtering pressures (e.g., a pressure of from about 0.5 to about 5 milliTorr), the full potential neutral argon atoms at the cathode will reflect off the cathode and can be implanted into the substrate to cause compressive stress. At higher sputtering pressures, there is a possibility that a sputtering gas (eg, argon) is implanted into the active growth layer below. By utilizing the teachings of the present invention, particularly by isolating the sputtering source from the ion source, this component of the compressible stress in the resulting metal oxide film can be reduced and preferably eliminated. Furthermore, The ion source can be used to control the stress in the metal oxide film in a repeatable and controllable manner, for example, in the manner described above.
在習知批式或裝載互鎖式濺鍍製程中,反應或非反應或離子輔助沉積,濺鍍氣體(其通常為氬氣)總是存在於製程氣體中,且在整個膜材沉積循環期間製程氣體與基板持續地相通。因此,對大於單層(1單層係1原子材料層)而言,氬氣有機會被挾帶或捕捉至基板之後續層中。 In conventional batch or load-locked sputtering processes, reactive or non-reactive or ion-assisted deposition, sputtering gas (which is typically argon) is always present in the process gas and throughout the film deposition cycle The process gas is in continuous communication with the substrate. Thus, for larger than single layers (1 monolayer 1 atomic material layer), argon has the opportunity to be entrained or captured into subsequent layers of the substrate.
相反地,在本發明之許多實施例中,可旋轉支架之每一轉僅可沉積1單層金屬。沉積之單層金屬因後續曝露於反應離子,例如,由在100% O2運作之離子源所產生之O2,而完全地消耗或氧化。因此,在許多實施例中,由於塗層之薄度,無氬原子,或O2分子植入以下這些非常薄的金屬層。因此,在許多實施例中,基板沒有任何植入之氬原子。例如,在某些實施例中,所得之金屬氧化物膜中之氬原子的濃度可小於1%,或較佳小於0.5%,或更佳為1-10百萬分率。 Conversely, in many embodiments of the invention, only one single layer of metal can be deposited per revolution of the rotatable mount. A single layer of metal is deposited by a subsequent exposure to a reactive ion, e.g., 2, and completely consumed by the oxidation or O produced in the ion source of 100% O 2 operation. Thus, in many embodiments, due to the thinness of the coating, no argon atoms, or O 2 molecules, are implanted into these very thin metal layers. Thus, in many embodiments, the substrate does not have any implanted argon atoms. For example, in certain embodiments, the concentration of argon atoms in the resulting metal oxide film can be less than 1%, or preferably less than 0.5%, or more preferably from 1 to 10 parts per million.
在許多實施例中,金屬膜沉積後,在反應離子,例如,氧化相期間之O2離子撞擊基板期間,留置在膜材表面上之任何游離氬原子可藉由撞擊金屬膜表面之有力反應離子(例如,O2離子)移除之。再者,如上所述,由於在製程加工下基板表面上金屬氧化物層的積聚係藉由周期性沉積金屬之薄層接著那些層與反應離子(例如,O2)之反應而達成之,在許多實施例中,無氬氣埋藏在以下之 多層反應膜中。因此,所得之氧化物膜(例如,氧化鋁膜)實質上沒有濺鍍之氣體原子(例如,氬原子)。 In many embodiments, after deposition of the metal film, during the reaction of ions, for example, O 2 ions during the oxidation phase, any free argon atoms remaining on the surface of the film may be strongly reacted by impacting the surface of the metal film. (for example, O 2 ions) removed. Furthermore, as described above, since the accumulation of the metal oxide layer on the surface of the substrate under the processing is achieved by periodically depositing a thin layer of metal followed by reaction of those layers with reactive ions (for example, O 2 ), In many embodiments, no argon gas is buried in the multilayer reaction film below. Therefore, the resulting oxide film (for example, an aluminum oxide film) is substantially free of sputtered gas atoms (for example, argon atoms).
藉由確保實質上沒有濺鍍之氣體原子(例如,氬原子)併入形成在基板表面上之氧化物膜中,可移除作為膜材中之雜質之與濺鍍之氣體原子存在相關之應力的成分。此亦可顯著地減少,較佳消除濺鍍源(例如,磁控管)中之電壓變動的影響,其會在目標物的整個壽命期間發生且亦隨著氧化物膜之積聚製程上之壓力發生。結果,所得之金屬氧化物膜之應力可藉由撞擊基板之反應離子的能量及反應離子流量決定至第一階。在某些實施例中,離子源的放電電壓及放電電流可決定反應離子的能量及離子流量。 By ensuring that substantially no sputtered gas atoms (for example, argon atoms) are incorporated into the oxide film formed on the surface of the substrate, the stress associated with the sputtered gas atoms can be removed as impurities in the film. Ingredients. This can also be significantly reduced, preferably eliminating the effects of voltage variations in the sputtering source (eg, magnetron), which can occur throughout the life of the target and also with the pressure build-up on the oxide film. occur. As a result, the stress of the resulting metal oxide film can be determined to the first order by the energy of the reactive ions striking the substrate and the flow rate of the reactive ions. In some embodiments, the discharge voltage and discharge current of the ion source can determine the energy of the reactive ions and the ion flux.
在某些實施例中,離子輔助之膜材製程中之應力可藉由離子對原子比率決定之。在該些實施例中,應力可藉由可旋轉支架之旋轉速度,磁控管電力(金屬速率/轉)及離子束電流的比率控制之。更一般而言,膜材品質,如金屬氧化物膜之折射率,光學傳輸及機械安定性可被離子/原子比率影響。在許多實施例中,離子/原子比率為約1,較佳大於1,例如,約1-10。 In some embodiments, the stress in the ion assisted membrane process can be determined by the ion to atomic ratio. In these embodiments, the stress can be controlled by the rotational speed of the rotatable mount, the ratio of magnetron power (metal rate/rotation) and ion beam current. More generally, the quality of the film, such as the refractive index of the metal oxide film, optical transmission and mechanical stability can be affected by the ion/atomic ratio. In many embodiments, the ion/atomic ratio is about 1, preferably greater than 1, for example, from about 1 to about 10.
結果,所製得之塗佈基板包括基底基板及設置在基板表面上之金屬氧化物膜。膜材可設置在多表面上,且這些可相同或不同。可使用各種基板,包含例如,結晶性材料如矽及藍寶石,撓曲性材料如聚合物基板及各種塑膠,包含聚碳酸酯或聚甲基丙烯酸甲酯,以及玻璃如 鈉鈣玻璃,硼矽酸鹽,或鋁矽酸鹽玻璃,包含化學強化之鹼鋁矽酸鹽玻璃(如Corning出品之稱為Gorilla→玻璃之材料)。基板的厚度可視目標應用及成本而變,可為,例如,大於約0.1mm,包含約0.2mm至約5mm,約0.3mm至約2mm,或約0.5mm至約1.0mm。金屬氧化物膜的厚度亦可在約0.1微米至約50微米,包含約0.5微米至約20微米及約1微米至約10微米之範圍變化。此外,金屬氧化物膜較佳實質上沒有惰性氣體雜質(例如,氬氣,氖氣,或氙氣),如上所述。 As a result, the coated substrate produced includes a base substrate and a metal oxide film disposed on the surface of the substrate. The membrane can be placed on multiple surfaces and these can be the same or different. Various substrates can be used, including, for example, crystalline materials such as ruthenium and sapphire, flexible materials such as polymer substrates and various plastics, including polycarbonate or polymethyl methacrylate, and glass such as Soda-lime glass, borosilicate, or aluminosilicate glass, including chemically strengthened alkali aluminosilicate glass (such as Corning's material called Gorilla→glass). The thickness of the substrate can vary depending on the intended application and cost, and can be, for example, greater than about 0.1 mm, including from about 0.2 mm to about 5 mm, from about 0.3 mm to about 2 mm, or from about 0.5 mm to about 1.0 mm. The thickness of the metal oxide film can also vary from about 0.1 microns to about 50 microns, including from about 0.5 microns to about 20 microns and from about 1 micron to about 10 microns. Further, the metal oxide film is preferably substantially free of inert gas impurities (for example, argon, helium, or neon) as described above.
金屬氧化物膜可賦予基板改良之性質。因此,藉由組合相對厚之基板材料與沉積之薄金屬氧化物表面膜,所得之塗佈基板會具有金屬氧化物膜所要之表面特性同時亦取得基底基板材料所要之整體性質的優點。這些塗佈基板與複合基板(包括多層不連續層之材料)顯著的差異在於沒有使用或不需要層之黏合,其經常為複合基板之脫層及失效的位置。作為特定之實施例,預期氧化鋁膜會對其設置於上之玻璃基板的表面提供改良之耐刮擦性,耐磨耗性,及/或硬度。亦可預期此塗佈基板之其他好處,視氧化鋁塗層之厚度和性質及玻璃的種類和厚度而定,包含,例如,改良之改質光學性質,高彎曲和機械強度,斷裂韌性(亦即,含裂痕或刮痕之塗佈基板之抗斷裂性能),模量,以及抗污性(改良或改質之親油性或親水性)。預期其他金屬氧化物膜會對其他或類似基板提供相對應的改良或改質,且該些組合會被熟知此項技藝人士所認可。 The metal oxide film can impart improved properties to the substrate. Therefore, by combining a relatively thick substrate material with a deposited thin metal oxide surface film, the resulting coated substrate will have the surface characteristics of the metal oxide film while also achieving the desired overall properties of the base substrate material. The significant difference between these coated substrates and the composite substrate (including the material of the multilayer discontinuous layer) is that there is no or no need for adhesion of the layers, which is often the location of delamination and failure of the composite substrate. As a specific embodiment, it is contemplated that the aluminum oxide film will provide improved scratch resistance, abrasion resistance, and/or hardness to the surface of the glass substrate disposed thereon. Other benefits of the coated substrate are also contemplated, depending on the thickness and nature of the alumina coating and the type and thickness of the glass, including, for example, improved modified optical properties, high bending and mechanical strength, and fracture toughness (also That is, the fracture resistance of the coated substrate containing cracks or scratches, the modulus, and the stain resistance (modified or modified lipophilicity or hydrophilicity). Other metal oxide films are expected to provide corresponding improvements or modifications to other or similar substrates, and such combinations are recognized by those skilled in the art.
所得之塗佈基板可使用於各式各樣不同最終用途之應用。作為特定實例,包括設置在玻璃基板上之Al2O3之塗佈基板可使用作為各種消費電子裝置的蓋板。電子裝置可為技藝中任何已知者,包括顯示器或顯示元件,如行動或可攜式電子裝置,包含但不限於,音樂及/或影片之電子媒體播放器,如mp3播放器,行動電話(手機),個人數位助理(PDA),傳呼機,筆記型電腦,或者電子筆記本或平板。蓋板可固定於裝置之顯示元件的顯示表面或者其可以分開之保護層放置或位在顯示元件的頂部上方或之上且若想要隨後可移除之。本特定實例中之塗佈基板之氧化鋁塗佈表面係蓋板之前面,外飾表面,此係為了可利用塗層的性質,如耐刮擦性,但亦可為側面表面以改良抗斷裂性及龜裂。蓋板的整體厚度可視各種因素而定,如氧化鋁層數目及裝置的大小,但通常小於或等於約5mm,如小於或等於約3mm及小於或等於約1mm。 The resulting coated substrate can be used in a wide variety of end use applications. As a specific example, a coated substrate including Al 2 O 3 disposed on a glass substrate can be used as a cover for various consumer electronic devices. The electronic device can be any known in the art, including a display or display element, such as a mobile or portable electronic device, including but not limited to, an electronic media player for music and/or video, such as an mp3 player, a mobile phone ( Mobile phone), personal digital assistant (PDA), pager, laptop, or electronic notebook or tablet. The cover may be attached to the display surface of the display element of the device or it may be placed in a separate protective layer or positioned above or above the top of the display element and if desired to be subsequently removed. The alumina coated surface of the coated substrate in this particular example is the front surface of the cover sheet, the exterior surface, which is in order to utilize the properties of the coating, such as scratch resistance, but may also be a side surface to improve resistance to breakage. Sex and cracks. The overall thickness of the cover may depend on various factors, such as the number of alumina layers and the size of the device, but is typically less than or equal to about 5 mm, such as less than or equal to about 3 mm and less than or equal to about 1 mm.
本文所述及之所有公開資料皆併入本文列為參考。 All publications described herein are hereby incorporated by reference.
雖然本發明已參照特定較佳實施例予以顯示及說明,但熟知此項技藝人士應可瞭解其中可進行形式及細節的各種變化沒有偏離本發明之精神及範圍,如以下之申請專利範圍所界定。 Although the present invention has been shown and described with reference to the preferred embodiments of the present invention, it will be understood by those skilled in the art .
10‧‧‧系統 10‧‧‧System
12‧‧‧外圍欄 12‧‧‧ peripheral bar
14‧‧‧金屬化區 14‧‧‧metallization area
16‧‧‧反應區 16‧‧‧Reaction zone
18‧‧‧鼓 18‧‧‧ drum
20‧‧‧基板 20‧‧‧Substrate
22‧‧‧磁控管 22‧‧‧Magnetron
24‧‧‧惰性氣體源 24‧‧‧Inert gas source
26‧‧‧前廊 26‧‧‧ front gallery
27‧‧‧孔隙 27‧‧‧ pores
28‧‧‧外擋板 28‧‧‧Outer baffle
30‧‧‧離子源 30‧‧‧Ion source
32‧‧‧氣體源 32‧‧‧ gas source
34‧‧‧圍欄 34‧‧‧Fence
36‧‧‧差動泵 36‧‧‧Differential pump
38‧‧‧內擋板 38‧‧‧ inner baffle
40‧‧‧外擋板 40‧‧‧Outer baffle
42‧‧‧中空陰極電子源 42‧‧‧ hollow cathode electron source
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CN107604328A (en) * | 2017-08-04 | 2018-01-19 | 上海交通大学 | A kind of fuel battery metal double polar plate highly effective ring vacuum coater |
CN114293168A (en) * | 2021-12-28 | 2022-04-08 | 广东省新兴激光等离子体技术研究院 | Coating material storage device, vacuum coating equipment and vacuum coating method |
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US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
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JPWO2002063064A1 (en) * | 2001-02-07 | 2004-06-10 | 旭硝子株式会社 | Sputtering apparatus and sputtering film forming method |
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CN107604328B (en) * | 2017-08-04 | 2019-12-10 | 上海交通大学 | high-efficiency annular vacuum coating device for metal bipolar plate of fuel cell |
CN114293168A (en) * | 2021-12-28 | 2022-04-08 | 广东省新兴激光等离子体技术研究院 | Coating material storage device, vacuum coating equipment and vacuum coating method |
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