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TW201443557A - Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, method for forming pattern, electronic device and method for manufacturing electronic device - Google Patents

Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, method for forming pattern, electronic device and method for manufacturing electronic device Download PDF

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TW201443557A
TW201443557A TW103106625A TW103106625A TW201443557A TW 201443557 A TW201443557 A TW 201443557A TW 103106625 A TW103106625 A TW 103106625A TW 103106625 A TW103106625 A TW 103106625A TW 201443557 A TW201443557 A TW 201443557A
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resin
ring
alkyl group
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TWI632424B (en
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Shuji Hirano
Hiroo Takizawa
Hideaki Tsubaki
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Fujifilm Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/301Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/302Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and two or more oxygen atoms in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/303Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one or more carboxylic moieties in the chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

According to the invention, an actinic ray-sensitive or radiation-sensitive resin composition is provided, which contains a resin (Aa), a resin (Ab) and a compound generating acid by irradiating actinic ray or radiation. The resin (Aa) contains a repeating unit (c) having at least two or more of a partial structure containing -COO- in a structure represented by the formula (KA-1) or the formula (KB-1). The resin (Ab) contains a repeating unit represented by the formula (A), and the solubility thereof to a developer is changed by an action of an acid.

Description

感光化射線性或感放射線性樹脂組成物、感光化射 線性或感放射線性膜、圖案形成方法、電子元件及電子元件的製造方法 Photosensitive ray- or radiation-sensitive resin composition, sensitized shot Linear or radiation sensitive film, pattern forming method, electronic component, and method of manufacturing electronic component

本發明是有關於一種感光化射線性或感放射線性樹脂組成物、使用其的感光化射線性或感放射線性膜、圖案形成方法、電子元件及電子元件的製造方法。更詳細而言,本發明是有關於一種可較佳地用於超大規模積體電路(Large Scale Integration,LSI)及高容量微晶片的製造製程、奈米壓印(nanoimprint)用模具(mold)製作製程以及高密度資訊記錄介質的製造製程等中可應用的超微影(microlithography)製程、以及其他光刻加工(photofabrication)製程中的感光化射線性或感放射線性樹脂組成物,使用其的感光化射線性或感放射線性膜,圖案形成方法,電子元件及電子元件的製造方法。 The present invention relates to a sensitized ray-sensitive or radiation-sensitive resin composition, a sensitized ray-sensitive or radiation-sensitive film using the same, a pattern forming method, an electronic component, and a method of producing an electronic component. More specifically, the present invention relates to a manufacturing process and a nanoimprint mold which can be preferably used for a large scale integrated circuit (LSI) and a high-capacity microchip. a microlithography process applicable to a manufacturing process and a manufacturing process of a high-density information recording medium, and a sensitizing ray-sensitive or radiation-sensitive resin composition in a photofabrication process, using the same Photosensitive ray or radiation sensitive film, pattern forming method, electronic component and method of manufacturing electronic component.

先前,於積體電路(Integrated Circuit,IC)或LSI等半 導體元件的製造製程中,一直藉由使用光阻(photoresist)組成物的微影(lithography)來進行微細加工。近年來,伴隨著積體電路的高積體化,逐漸要求形成次微米(sub-micron)區域或四分之一微米(quarter-micron)區域的超微細圖案。伴隨於此,曝光波長亦可見自g射線至i射線、進而至KrF準分子雷射光般的短波長化的傾向,目前正在開發以具有193nm波長的ArF準分子雷射作為光源的曝光機。另外,作為進一步提高解析力的技術,先前以來開發出了於投影透鏡與試樣之間充滿高折射率的液體(以下亦稱為「液浸液」)的所謂液浸法,例如於專利文獻1及專利文獻2中,作為液浸曝光用,揭示有具有較佳的疏水性的化學增幅型抗蝕劑組成物。 Previously, half of an integrated circuit (IC) or LSI In the manufacturing process of a conductor element, microfabrication has been performed by using a lithography of a photoresist composition. In recent years, with the high integration of integrated circuits, it has been demanded to form ultra-fine patterns of sub-micron regions or quarter-micron regions. Along with this, the exposure wavelength also tends to be shorter than the wavelength of the g-ray to the i-ray and further to the KrF excimer laser light, and an exposure machine using an ArF excimer laser having a wavelength of 193 nm as a light source has been developed. In addition, as a technique for further improving the resolving power, a so-called liquid immersion method in which a liquid having a high refractive index between a projection lens and a sample (hereinafter also referred to as "liquid immersion liquid") has been developed has been developed, for example, in the patent literature. 1 and Patent Document 2 disclose a chemically amplified resist composition having a preferable hydrophobicity as a liquid immersion exposure.

另外,目前除了準分子雷射光以外,使用電子束、X射線及極紫外線(EUV(Extreme Ultraviolet)光)等的微影亦正在進行開發。伴隨於此,正在開發有效地感應各種放射線、感度及解析度優異的化學增幅型抗蝕劑組成物。該些電子束或X射線、或者EUV微影被定位為下一代或下下一代的圖案形成技術,期望高感度、高解析性的抗蝕劑組成物。尤其為了縮短晶圓處理時間,高感度化為非常重要的課題,若欲追求高感度化,則於0.25μm以下的超微細區域中,不僅解析力降低,而且伴隨著圖案微細化的圖案塌陷的問題變明顯。 In addition, in addition to excimer laser light, lithography using electron beams, X-rays, and extreme ultraviolet (EUV) light is also under development. Along with this, a chemically amplified resist composition which is excellent in various types of radiation, sensitivity, and resolution is being developed. These electron beams or X-rays or EUV lithography are positioned as next-generation or next-generation pattern forming technologies, and a high-sensitivity, high-resolution resist composition is desired. In particular, in order to reduce the wafer processing time, high sensitivity is a very important problem. In the ultrafine region of 0.25 μm or less, not only the resolution is lowered, but also the pattern is reduced with the pattern refinement. The problem is obvious.

進而已知,於EUV光微影中,產生來自曝光光源的帶外(out-band)光(EUV的波長以外的紫外線),使圖案形狀劣化 (例如參照非專利文獻1及非專利文獻2)。 Further, it is known that in EUV photolithography, out-band light (ultraviolet light other than the wavelength of EUV) from an exposure light source is generated to deteriorate the pattern shape. (For example, refer to Non-Patent Document 1 and Non-Patent Document 2).

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2011-118318號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-118318

[專利文獻2]日本專利特開2011-038066號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2011-038066

[非專利文獻] [Non-patent literature]

[非專利文獻1]「國際光學工程學會會議記錄(Proceedings of The International Society for Optical. Engineering,Proc. of SPIE)」,Vol.7273,72731W,2009 [Non-Patent Document 1] "Proceedings of The International Society for Optical. Engineering, Proc. of SPIE", Vol. 7273, 72731W, 2009

[非專利文獻2]「國際光學工程學會會議記錄(Proceedings of The International Society for Optical. Engineering,Proc. of SPIE)」,Vol.7636,763626,2010 [Non-Patent Document 2] "Proceedings of The International Society for Optical. Engineering, Proc. of SPIE", Vol. 7636, 763626, 2010

為了改善伴隨著圖案的超微細化的圖案塌陷的問題,有時使抗蝕劑組成物疏水化,視疏水化的方法不同,有時可見對微影特性的不良影響,例如本發明者等人發現,有時與鹼性顯影液的親和性、浸透性降低,感度降低或粗糙度特性劣化,或引起顯影缺陷。 In order to improve the pattern collapse due to the ultrafine refinement of the pattern, the resist composition may be hydrophobized, and depending on the method of hydrophobization, adverse effects on lithography characteristics may be observed, for example, the inventors and the like. It has been found that the affinity with the alkaline developer is sometimes lowered, the permeability is lowered, the sensitivity is lowered, or the roughness characteristics are deteriorated, or development defects are caused.

因此,期望開發出一種感度、解析性、粗糙度特性、圖案形狀及顯影缺陷的抑制能力優異,且可對EUV曝光抑制由帶外光所致的圖案形狀的劣化(膜薄化)的感光化射線性或感放射線性樹脂組成物。 Therefore, it is desired to develop a sensitivity, an analytical property, a roughness characteristic, a pattern shape, and a development defect, and it is possible to suppress the deterioration of the pattern shape (film thinning) caused by the out-of-band light for EUV exposure. A radioactive or radiation sensitive resin composition.

本發明的目的在於提供一種感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜及圖案形成方法、以及電子元件及電子元件的製造方法,上述感光化射線性或感放射線性樹脂組成物的感度、解析性、粗糙度特性、圖案形狀及顯影缺陷的抑制能力優異,且尤其對於EUV曝光,由帶外光所致的圖案形狀的劣化(膜薄化)的抑制能力優異。 An object of the present invention is to provide a sensitized ray-sensitive or radiation-sensitive resin composition, a sensitizing ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for producing an electronic component and an electronic component, wherein the sensitizing ray or feeling The radiation linear resin composition is excellent in sensitivity, resolution, roughness characteristics, pattern shape, and development defect suppressing ability, and particularly in the case of EUV exposure, the pattern shape is deteriorated (film thinning) by the out-of-band light. Excellent.

本發明例如為如下所述。 The present invention is as follows, for example.

[1]一種感光化射線性或感放射線性樹脂組成物,含有樹脂(Aa)、樹脂(Ab)及藉由光化射線或放射線的照射而產生酸的化合物,上述樹脂(Aa)含有重複單元(c),上述重複單元(c)具有至少2個以上的通式(KA-1)或通式(KB-1)所表示的結構中的-COO-所表示的基團,上述樹脂(Ab)含有通式(A)所表示的重複單元、且對顯影液的溶解性因酸的作用而變化, [1] A photosensitive ray-sensitive or radiation-sensitive resin composition comprising a resin (Aa), a resin (Ab), and a compound which generates an acid by irradiation with actinic rays or radiation, wherein the resin (Aa) contains a repeating unit (c) The repeating unit (c) has at least two or more groups represented by -COO- in the structure represented by the formula (KA-1) or (KB-1), and the above resin (Ab) a repeating unit represented by the formula (A) and having a solubility in a developing solution due to an action of an acid,

通式(KA-1)中,Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基;於Zka存在多個的情形時,多個Zka可相同亦可不 同,Zka彼此亦可連結而形成環;nka表示0~10的整數;Q表示與式中的原子一起形成內酯環所必需的原子組群;通式(KB-1)中,Xkb1及Xkb2分別獨立地表示拉電子基;nkb及nkb'分別獨立地表示0或1;Rkb1、Rkb2、Rkb3及Rkb4分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基;Rkb1、Rkb2及Xkb1的至少2個亦可相互連結而形成環,Rkb3、Rkb4及Xkb2的至少2個亦可相互連結而形成環; In the formula (KA-1), Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group or an electron-withdrawing group; when a plurality of Z ka are present, Z ka plurality may be identical or different, Z ka may link each other to form a ring; NKA represents an integer of 0 to 10; Q represents an atomic group necessary for the lactone ring with the atom in the formula; formula ( In KB-1), X kb1 and X kb2 each independently represent a pull electron group; nkb and nkb' respectively represent 0 or 1; R kb1 , R kb2 , R kb3 and R kb4 each independently represent a hydrogen atom or an alkane; a group, a cycloalkyl group, an aryl group or an electron-donating group; at least two of R kb1 , R kb2 and X kb1 may be linked to each other to form a ring, and at least two of R kb3 , R kb4 and X kb2 may be linked to each other. Forming a ring;

式中,R21、R22及R23分別獨立地表示氫原子、烷基、鹵素原子、氰基或烷氧基羰基;其中,R22亦可與Ar2鍵結而形成環,此時的R22表示單鍵或伸烷基;X2表示單鍵、-COO-或-CONR30-,R30表示氫原子或烷基; L2表示單鍵或伸烷基;Ar2表示(n+1)價的芳香環基,於與R22鍵結而形成環的情形時,表示(n+2)價的芳香環基;n表示1~4的整數。 In the formula, R 21 , R 22 and R 23 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group; wherein R 22 may also bond with Ar 2 to form a ring, at this time R 22 represents a single bond or an alkylene group; X 2 represents a single bond, -COO- or -CONR 30 -, R 30 represents a hydrogen atom or an alkyl group; L 2 represents a single bond or an alkyl group; and Ar 2 represents (n+) 1) A valence aromatic ring group, in the case of bonding to R 22 to form a ring, represents an (n+2)-valent aromatic ring group; and n represents an integer of 1 to 4.

[2]如[1]所記載的感光化射線性或感放射線性樹脂組成物,其中樹脂(Aa)所含有的重複單元(c)含有下述通式(KY-3)所表示的結構, [2] The sensitized ray-sensitive or radiation-sensitive resin composition according to [1], wherein the repeating unit (c) contained in the resin (Aa) has a structure represented by the following formula (KY-3).

通式(KY-3)中,Rs表示鏈狀或環狀伸烷基,於存在多個的情形時,可相同亦可不同;Ls表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵,於存在多個的情形時,可相同亦可不同;ns表示-(Rs-Ls)-所表示的連結基的重複數,表示0~5的整數;Lky表示伸烷基、氧原子或硫原子;Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基;於Zka存在多個的情形時,多個Zka可相同亦可不 同,Zka彼此亦可連結而形成環;nka表示0~10的整數;Rkb1及Rkb2分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基,Rkb1、Rkb2及Rky5的至少2個亦可相互連結而形成環;nkb表示0或1;Rky5表示拉電子基。 In the formula (KY-3), Rs represents a chain or cyclic alkyl group, and when it is plural, it may be the same or different; Ls represents a single bond, an ether bond, an ester bond, a guanamine bond, or an amine. The urethane bond or the urea bond may be the same or different when there are a plurality of cases; ns represents the number of repeats of the linker represented by -(Rs-Ls)-, and represents an integer of 0 to 5; L ky represents alkylene, oxygen atom or sulfur atom; Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, an acyl group, an aryl group, a lactone ring group or electron withdrawing group; in the presence of a plurality of case Z ka When a plurality of Z ka may be the same or different, Z ka may be bonded to each other to form a ring; nka represents an integer of 0 to 10; and R kb1 and R kb2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, and an aromatic group; At least two of R kb1 , R kb2 and R ky5 may be bonded to each other to form a ring; nkb represents 0 or 1; and R ky5 represents an electron-withdrawing group.

[3]如[1]或[2]所記載的感光化射線性或感放射線性樹脂組成物,其中樹脂(Aa)更含有重複單元(Aa3),該重複單元(Aa3)具有選自由氟原子、含氟原子的基團、含矽原子的基團、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基及碳數7以上的芳烷基所組成的組群中的一個以上的基團。 [3] The photosensitive ray-sensitive or radiation-sensitive resin composition according to [1] or [2] wherein the resin (Aa) further contains a repeating unit (Aa3) having a fluorine atom selected from the group consisting of fluorine atoms a fluorine atom-containing group, a halogen atom-containing group, an alkyl group having 6 or more carbon atoms, a cycloalkyl group having 5 or more carbon atoms, an aryl group having 6 or more carbon atoms, and an aralkyl group having 7 or more carbon atoms. More than one group in the group.

[4]如[1]至[3]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中樹脂(Aa)更含有下述通式(Aa4)所表示的重複單元, The photosensitive ray-sensitive or radiation-sensitive resin composition according to any one of the above-mentioned, wherein the resin (Aa) further contains a repeating unit represented by the following formula (Aa4),

通式(aa2-1)中,Rb表示氫原子、烷基或鹵素原子; S1a表示取代基,於存在多個的情形時分別獨立;p表示0~5的整數。 In the formula (aa2-1), Rb represents a hydrogen atom, an alkyl group or a halogen atom; S 1a represents a substituent, and when it is plural, it is independent; and p represents an integer of 0-5.

[5]如[1]至[4]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中樹脂(Aa)更含有具有藉由酸的作用而分解的基團的重複單元。 [5] The sensitized ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [4] wherein the resin (Aa) further contains a repeat having a group decomposed by the action of an acid unit.

[6]如[5]所記載的感光化射線性或感放射線性樹脂組成物,其中具有藉由酸的作用而分解的基團的上述重複單元是由下述通式(Aa1)或通式(Aa2)所表示, [6] The photosensitive ray-sensitive or radiation-sensitive resin composition according to [5], wherein the above repeating unit having a group decomposed by an action of an acid is represented by the following formula (Aa1) or (Aa2),

通式(Aa1)中,R'表示氫原子或烷基;L表示單鍵或二價連結基;R1表示氫原子或一價取代基;R2表示一價取代基;R1與R2亦可相互鍵結而與式中的氧原子一起形成環; R3表示氫原子、烷基或環烷基;通式(Aa2)中,Ra表示氫原子、烷基、氰基或鹵素原子;L1表示單鍵或二價連結基;R1及R2分別獨立地表示烷基;R11及R12分別獨立地表示烷基,R13表示氫原子或烷基;R11、R12及R13的任意2個亦可相互連結而形成環。 In the formula (Aa1), R' represents a hydrogen atom or an alkyl group; L represents a single bond or a divalent linking group; R 1 represents a hydrogen atom or a monovalent substituent; R 2 represents a monovalent substituent; R 1 and R 2 Further, they may be bonded to each other to form a ring together with an oxygen atom in the formula; R 3 represents a hydrogen atom, an alkyl group or a cycloalkyl group; in the formula (Aa2), Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom; L 1 represents a single bond or a divalent linking group; R 1 and R 2 each independently represent an alkyl group; R 11 and R 12 each independently represent an alkyl group, R 13 represents a hydrogen atom or an alkyl group; R 11 and R 12 and any two of R 13 may be mutually connected to form a ring.

[7]如[1]至[6]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中樹脂(Ab)至少含有下述式(Ab1)或式(Ab2)所表示的重複單元作為通式(A)所表示的重複單元, The sensitized ray-sensitive or radiation-sensitive resin composition according to any one of the above aspects, wherein the resin (Ab) contains at least the following formula (Ab1) or formula (Ab2) a repeating unit as a repeating unit represented by the general formula (A),

式(A2)中,R23表示氫原子、烷基、鹵素原子、氰基或烷氧基羰基。 In the formula (A2), R 23 represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.

[8]如[1]至[7]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中以該組成物中的總固體成分為基準,樹 脂(Aa)的含有率為0.01質量%~30質量%的範圍。 [8] The sensitized ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [7] wherein, based on the total solid content in the composition, the tree The content of the fat (Aa) is in the range of 0.01% by mass to 30% by mass.

[9]如[1]至[7]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中以該組成物中的總固體成分為基準,樹脂(Aa)的含有率為0.01質量%~20質量%的範圍。 The sensitizing ray-sensitive or radiation-sensitive resin composition according to any one of the above aspects, wherein the content of the resin (Aa) is based on the total solid content in the composition. It is in the range of 0.01% by mass to 20% by mass.

[10]如[1]至[7]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中以該組成物中的總固體成分為基準,樹脂(Aa)的含有率為0.01質量%~10質量%的範圍。 [10] The sensitized ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [7] wherein the content of the resin (Aa) is based on the total solid content in the composition. It is in the range of 0.01% by mass to 10% by mass.

[11]如[1]至[7]中任一項所記載的感光化射線性或感放射線性樹脂組成物,其中以該組成物中的總固體成分為基準,樹脂(Aa)的含有率為0.01質量%~5質量%的範圍。 [11] The sensitized ray-sensitive or radiation-sensitive resin composition according to any one of [1], wherein the content of the resin (Aa) is based on the total solid content in the composition. It is in the range of 0.01% by mass to 5% by mass.

[12]一種感光化射線性或感放射線性膜,其是使用如[1]至[11]中任一項所記載的感光化射線性或感放射性樹脂組成物而形成。 [12] A sensitizing ray-sensitive or radiation-sensitive film which is formed using the sensitized ray-sensitive or sensitized radioactive resin composition according to any one of [1] to [11].

[13]一種圖案形成方法,包括:使用如[1]至[11]中任一項所記載的感光化射線性或感放射線性樹脂組成物來形成感光化射線性或感放射線性膜;對上述感光化射線性或感放射線性膜照射光化射線或放射線而進行曝光;以及對經曝光的上述感光化射線性或感放射線性膜進行顯影。 [13] A pattern forming method comprising: forming a sensitized ray-sensitive or radiation-sensitive film using the sensitized ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [11]; The sensitizing ray-sensitive or radiation-sensitive film is irradiated with actinic rays or radiation to perform exposure, and the exposed sensitized ray-sensitive or radiation-sensitive film is developed.

[14]如[13]所記載的圖案形成方法,其中使用電子束或極紫外線作為上述光化射線或放射線。 [14] The pattern forming method according to [13], wherein an electron beam or an extreme ultraviolet ray is used as the actinic ray or radiation.

[15]一種半導體元件,其是經由包含如[13]或[14]所記載的圖案形成方法的步驟而製造。 [15] A semiconductor element produced by the step of the pattern forming method according to [13] or [14].

[16]一種電子元件的製造方法,包含如[13]或[14]所記載的圖案形成方法。 [16] A method of producing an electronic component, comprising the pattern forming method according to [13] or [14].

根據本發明,可提供一種感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜及圖案形成方法、以及電子元件的製造方法及電子元件,上述感光化射線性或感放射線性樹脂組成物的感度、解析性、粗糙度特性、圖案形狀及顯影缺陷的抑制能力優異,且尤其對於EUV曝光,由帶外光所致的圖案形狀的劣化(膜薄化)的抑制能力優異。 According to the present invention, it is possible to provide a sensitized ray-sensitive or radiation-sensitive resin composition, a sensitizing ray-sensitive or radiation-sensitive film, a pattern forming method, a method for producing an electronic device, and an electronic component, and the sensitizing ray or feeling The radiation linear resin composition is excellent in sensitivity, resolution, roughness characteristics, pattern shape, and development defect suppressing ability, and particularly in the case of EUV exposure, the pattern shape is deteriorated (film thinning) by the out-of-band light. Excellent.

於本說明書中的基團(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基團,並且亦包含具有取代基的基團。例如所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),而且亦包含具有取代基的烷基(經取代的烷基)。 In the expression of the group (atomic group) in the present specification, it is not described that the substituted and unsubstituted expression includes a group having no substituent, and also includes a group having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

再者,此處所謂「光化射線」或「放射線」,例如是指水銀燈的明線光譜、準分子雷射所代表的遠紫外線、極紫外(EUV)線、X射線、軟X射線、電子束(Electron Beam,EB)等。另外,於本發明中,所謂光是指光化射線或放射線。 In addition, the term "actinic ray" or "radiation" as used herein means, for example, a bright line spectrum of a mercury lamp, a far-ultraviolet light represented by an excimer laser, an extreme ultraviolet (EUV) line, an X-ray, a soft X-ray, or an electron. Beam (Electron Beam, EB) and so on. Further, in the present invention, the term "light" means actinic rays or radiation.

另外,此處所謂「曝光」,只要無特別說明,則不僅包 含利用水銀燈、準分子雷射所代表的遠紫外線、X射線、EUV光等的曝光,而且亦包含利用電子束、離子束(ion beam)等粒子束的描畫。 In addition, the term "exposure" as used herein means not only unless otherwise stated. It includes exposure to far ultraviolet rays, X-rays, EUV light, etc. represented by mercury lamps and excimer lasers, and also includes drawing using particle beams such as electron beams and ion beams.

以下,對本發明的實施形態加以詳細說明。 Hereinafter, embodiments of the present invention will be described in detail.

<感光化射線性或感放射線性樹脂組成物> <Photosensitized ray-sensitive or radiation-sensitive resin composition>

本發明的感光化射線性或感放射線性樹脂組成物(以下亦稱為「本發明的組成物」等)含有樹脂(Aa)、樹脂(Ab)及藉由光化射線或放射線的照射而產生酸的化合物,上述樹脂(Aa)含有具有至少2個以上的後述極性轉變基的重複單元(c),上述樹脂(Ab)含有後述通式(A)所表示的重複單元、且對顯影液的溶解性因酸的作用而變化。 The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention (hereinafter also referred to as "the composition of the present invention" or the like) contains a resin (Aa), a resin (Ab), and is produced by irradiation with actinic rays or radiation. In the acid compound, the resin (Aa) contains a repeating unit (c) having at least two or more polar transition groups described later, and the resin (Ab) contains a repeating unit represented by the following formula (A) and is used for a developing solution. Solubility changes due to the action of acid.

本發明的組成物於一態樣中,更含有選自酸增殖劑、溶劑、鹼性化合物、界面活性劑及其他添加物中的至少一種。 In one aspect, the composition of the present invention further contains at least one selected from the group consisting of an acid multiplier, a solvent, a basic compound, a surfactant, and other additives.

以下,對該些各成分加以說明。 Hereinafter, each component will be described.

[1]樹脂(Aa) [1] Resin (Aa)

<重複單元(c)> <repeat unit (c)>

樹脂(Aa)含有重複單元(c),該重複單元(c)具有至少2個以上的後述通式(KA-1)或通式(KB-1)所表示的結構中的-COO-所表示的基團(以下稱為「極性轉變基」)。因與後述樹脂(Ab)的親疏水性之差,樹脂(Aa)可經過製膜而偏向存在於膜的表面從而形成保護膜。極性轉變基為藉由鹼性顯影液的作用而發生分解、於鹼性顯影液中的溶解度增大的基團,因鹼性顯影液的作用 而分解的成分偏向存在於膜表層部,藉此與鹼性顯影液的親和性變高,可實現高感度化、粗糙度特性及顯影缺陷的改善。另外,亦可同時改善EUV微影中的由帶外光所致的圖案形狀劣化(膜薄化)。再者,關於是否經過製膜而偏向存在於膜表面從而形成保護膜,例如於將未添加樹脂(Aa)的組成物膜的表面靜止接觸角(純水的接觸角)、與添加有樹脂(Aa)的組成物膜的表面靜止接觸角比較,該接觸角上升的情形時,可視為形成了保護層。 The resin (Aa) contains a repeating unit (c) having at least two or more of -COO- represented by a structure represented by a formula (KA-1) or a formula (KB-1) described later. The group (hereinafter referred to as "polar transition group"). The resin (Aa) can be formed on the surface of the film to form a protective film by forming a film due to the difference in hydrophilicity and hydrophobicity of the resin (Ab) to be described later. The polar transition group is a group which is decomposed by the action of an alkaline developer and has an increased solubility in an alkaline developer due to the action of an alkaline developer. On the other hand, the decomposed component tends to exist in the surface layer portion of the film, whereby the affinity with the alkaline developing solution is increased, and improvement in high sensitivity, roughness characteristics, and development defects can be achieved. In addition, it is also possible to simultaneously improve pattern shape deterioration (film thinning) caused by out-of-band light in EUV lithography. Further, whether or not the film is formed on the surface of the film to form a protective film, for example, a static contact angle (contact angle of pure water) of the film of the composition to which the resin (Aa) is not added, and a resin (for addition) The surface static contact angle of the composition film of Aa) is compared, and when the contact angle is raised, it is considered that a protective layer is formed.

重複單元(c)較佳為於一個側鏈上具有至少2個以上的極性轉變基、以及氟原子及矽原子的至少任一個的重複單元(c')。即,為包括於具有多個極性轉變基的側鏈上,具有氟原子及矽原子的至少任一個的結構的重複單元。再者,氟原子可為作為後述極性轉變基中的拉電子基的氟原子,亦可為與作為該拉電子基的氟原子不同的氟原子。 The repeating unit (c) is preferably a repeating unit (c') having at least two or more polar transition groups and at least one of a fluorine atom and a halogen atom in one side chain. That is, it is a repeating unit having a structure including at least one of a fluorine atom and a ruthenium atom on a side chain having a plurality of polar transition groups. Further, the fluorine atom may be a fluorine atom which is an electron-withdrawing group in a polar transition group to be described later, or may be a fluorine atom different from a fluorine atom as the electron-withdrawing group.

另外,亦較佳為重複單元(c)為具有至少2個以上的極性轉變基、且不具有氟原子及矽原子的重複單元(c*),且樹脂(Aa)更含有具有氟原子及矽原子的至少任一個的後述重複單元(Aa3)。 Further, it is also preferred that the repeating unit (c) is a repeating unit (c*) having at least two or more polar transition groups and having no fluorine atom and a halogen atom, and the resin (Aa) further contains a fluorine atom and a ruthenium A repeating unit (Aa3) which is described later of at least one of the atoms.

或者,重複單元(c)亦較佳為於一個側鏈上具有至少2個以上的極性轉變基,且於同一重複單元內的與上述側鏈不同的側鏈上,具有氟原子及矽原子的至少任一個的重複單元(c")。於該情形時,較佳為具有極性轉變基的側鏈與具有氟原子及矽原子的至少任一個的側鏈介隔主鏈的碳原子而處於α位的位置關係、 即下述式(4)般的位置關係。式中,B1表示具有極性轉變基的部分結構,B2表示具有氟原子及矽原子的至少任一個的部分結構。 Alternatively, the repeating unit (c) preferably has at least two or more polar transition groups in one side chain, and has a fluorine atom and a germanium atom in a side chain different from the above side chain in the same repeating unit. At least one of the repeating units (c"). In this case, it is preferred that the side chain having a polar transition group and the side chain having at least one of a fluorine atom and a ruthenium atom intervene in the carbon atom of the main chain to be in the α Positional relationship That is, the positional relationship like the following formula (4). In the formula, B1 represents a partial structure having a polar transition group, and B2 represents a partial structure having at least one of a fluorine atom and a ruthenium atom.

該些樹脂(Aa)的態樣中,更佳為含有重複單元(c')。 In the aspect of the resin (Aa), it is more preferred to contain a repeating unit (c').

此處,所謂極性轉變基,如上所述,是指因鹼性顯影液的作用而分解、並於鹼性顯影液中的溶解度增大的基團,為後述通式(KA-1)或通式(KB-1)所示的結構中的-COO-所表示的部分結構。 Here, the polar transition group is a group which is decomposed by the action of the alkaline developing solution and has an increased solubility in the alkaline developing solution, and is a formula (KA-1) or a pass which will be described later. A partial structure represented by -COO- in the structure represented by the formula (KB-1).

通式(KA-1)所表示的內酯結構只要具有內酯環,則可使用任意基團,較佳為具有5員環~7員環內酯結構的基團,且較佳為於5員環~7員環內酯結構上以形成雙環結構、螺環結構的形式縮環有其他環結構。 The lactone structure represented by the formula (KA-1) may be any group as long as it has a lactone ring, preferably a group having a 5-membered ring to a 7-membered ring lactone structure, and preferably 5 The ring of the member ring has a ring structure with a ring structure in the form of a bicyclic structure or a spiro ring structure.

再者,重複單元中的直接鍵結於樹脂主鏈上的酯基(例如丙烯酸酯中的-COO-)由於作為極性轉變基的功能差,故不包括在本申請案的極性轉變基中。 Further, the ester group directly bonded to the resin main chain in the repeating unit (e.g., -COO- in the acrylate) is not included in the polar transition group of the present application because of its poor function as a polar transition group.

另外,重複單元(c)亦可不分別具有2個(KA-1)或(KB-1)所表示的結構總體,無論是重複一部分、例如2個酯結構夾持1個拉電子基的形態,還是後述式(KY-1)的形態,均理 解為包含2個極性轉變基。 Further, the repeating unit (c) may not have two structural entities represented by (KA-1) or (KB-1), respectively, regardless of a form in which a part of the repeating structure, for example, two ester structures are sandwiched by one electron withdrawing group, Or the form of the following formula (KY-1), The solution is composed of two polar transition groups.

另外,重複單元(c*)及重複單元(c")中,極性轉變基更佳為通式(KA-1)所表示的結構中的-COO-所表示的部分結構。 Further, in the repeating unit (c*) and the repeating unit (c"), the polar transition group is more preferably a partial structure represented by -COO- in the structure represented by the formula (KA-1).

通式(KA-1)中,Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基。於Zka存在多個的情形時,多個Zka可相同亦可不同,Zka彼此亦可連結而形成環。Zka彼此連結而形成的環例如可列舉環烷基環、雜環(環狀醚環、內酯環等)。 In the formula (KA-1), Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group or an electron-withdrawing group. In the case where there is a plurality of Z ka, Z ka plurality may be identical or different, Z ka may link each other to form a ring. Examples of the ring formed by linking Z ka to each other include a cycloalkyl ring and a hetero ring (a cyclic ether ring, a lactone ring, etc.).

nka表示0~10的整數。nka較佳為0~8的整數,更佳為0~5的整數,進而佳為1~4的整數,最佳為1~3的整數。 Nka represents an integer from 0 to 10. Nka is preferably an integer of 0 to 8, more preferably an integer of 0 to 5, and further preferably an integer of 1 to 4, and most preferably an integer of 1 to 3.

Q表示與式中的原子一起形成內酯環所必需的原子組群。如上所述,內酯環只要為具有內酯結構的基團,則並無特別限定,較佳為具有5員環~7員環內酯結構的基團,且較佳為於5員環~7員環內酯結構上以形成雙環結構、螺環結構的形式縮環有其他環 結構。 Q represents the group of atoms necessary to form a lactone ring together with the atoms in the formula. As described above, the lactone ring is not particularly limited as long as it has a lactone structure, and is preferably a group having a 5-membered ring to a 7-membered ring lactone structure, and is preferably a 5-membered ring. The 7-membered ring lactone structure has other rings in the form of a bicyclic structure and a spiro ring structure. structure.

通式(KB-1)中,Xkb1及Xkb2分別獨立地表示拉電子基。 In the general formula (KB-1), X kb1 and X kb2 each independently represent an electron-withdrawing group.

nkb及nkb'分別獨立地表示0或1。再者,於nkb、nkb'為0的情形時,Xkb1、Xkb2表示與酯基(-COO-)直接鍵結。 Nkb and nkb' respectively represent 0 or 1. Further, when nkb and nkb' are 0, X kb1 and X kb2 indicate direct bonding to an ester group (-COO-).

Rkb1、Rkb2、Rkb3及Rkb4分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基。Rkb1、Rkb2及Xkb1的至少2個亦可相互連結而形成環,Rkb3、Rkb4及Xkb2的至少2個亦可相互連結而形成環。 R kb1 , R kb2 , R kb3 and R kb4 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an electron-withdrawing group. At least two of R kb1 , R kb2 and X kb1 may be linked to each other to form a ring, and at least two of R kb3 , R kb4 and X kb2 may be linked to each other to form a ring.

Rkb3、Rkb4及Xkb2的至少2個相互連結而形成的環較佳可列舉環烷基或雜環基,雜環基較佳為內酯環基。內酯環例如可列舉後述式(KA-1-1)~式(KA-1-17)所表示的結構。 The ring formed by at least two of R kb3 , R kb4 and X kb2 is preferably a cycloalkyl group or a heterocyclic group, and the heterocyclic group is preferably a lactone ring group. The lactone ring is, for example, a structure represented by the following formula (KA-1-1) to formula (KA-1-17).

再者,於通式(KA-1)或通式(KB-1)所表示的結構為通式(KA-1)所表示的結構、Xkb1及Xkb2為1價的情形的(KB-1)所表示的結構的情形般不具有結合鍵的情形時,為將該結構中的任意的氫原子去掉至少一個所得的一價以上的部分結構。 In addition, the structure represented by the formula (KA-1) or the formula (KB-1) is a structure represented by the formula (KA-1), and X kb1 and X kb2 are monovalent (KB- 1) When there is no bond in the case of the structure shown, at least one of the obtained monovalent or higher partial structures is removed for any hydrogen atom in the structure.

Zka、Xkb1、Xkb2、Rkb1~Rkb4的拉電子基可列舉:鹵素原子、氰基、氧基、羰基、羰氧基、氧基羰基、腈基、硝基、磺醯基、亞磺醯基、或-C(Rf1)(Rf2)-Rf3所表示的鹵代(環)烷基或鹵代芳基及這些的組合。 The electron withdrawing group of Z ka , X kb1 , X kb2 , and R kb1 to R kb4 may, for example, be a halogen atom, a cyano group, an oxy group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, a nitrile group, a nitro group or a sulfonyl group. A sulfinyl group, or a halogenated (cyclo)alkyl group or a halogenated aryl group represented by -C(R f1 )(R f2 )-R f3 and a combination thereof.

再者,所謂「鹵代(環)烷基」,表示至少一部分經鹵化的烷基及環烷基。於拉電子基為二價以上的基團的情形時,其 餘的結合鍵形成與任意的原子或取代基的鍵結,亦可經由進一步的取代基而連結於樹脂(Aa)的主鏈上。 Further, the "halo (cyclo)alkyl group" means at least a part of a halogenated alkyl group and a cycloalkyl group. When the electron-donating group is a group having a divalent or higher group, The remaining bond bond forms a bond with an arbitrary atom or a substituent, and may be bonded to the main chain of the resin (Aa) via a further substituent.

此處,Rf1表示鹵素原子、全鹵烷基、全鹵環烷基或全鹵芳基,更佳為表示氟原子、全氟烷基或全氟環烷基,進而佳為表示氟原子或三氟甲基。 Here, R f1 represents a halogen atom, a perhaloalkyl group, a perhalocycloalkyl group or a perhaloaryl group, more preferably a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group, and further preferably represents a fluorine atom or Trifluoromethyl.

Rf2、Rf3分別獨立地表示氫原子、鹵素原子或有機基,Rf2與Rf3亦可連結而形成環。有機基例如表示烷基、環烷基、烷氧基等。 R f2 and R f3 each independently represent a hydrogen atom, a halogen atom or an organic group, and R f2 and R f3 may be bonded to each other to form a ring. The organic group means, for example, an alkyl group, a cycloalkyl group, an alkoxy group or the like.

Rf1~Rf3的至少2個亦可連結而形成環,所形成的環可列舉:(鹵代)環烷基環、(鹵代)芳基環等。 At least two of R f1 to R f3 may be bonded to each other to form a ring, and examples of the ring to be formed include a (halogenated) cycloalkyl ring and a (halogenated) aryl ring.

Rf1~Rf3的(鹵代)烷基例如可列舉上述Zka的烷基及其經鹵化的結構。 The (halogenated) alkyl group of R f1 to R f3 may, for example, be an alkyl group of the above Z ka and a halogenated structure thereof.

Rf1~Rf3中或Rf2與Rf3連結而形成的環中的(全)鹵代環烷基及(全)鹵代芳基例如可列舉上述Zka的環烷基經鹵化的結構,更佳可列舉-C(n)F(2n-2)H所表示的氟環烷基、及-C(n)F(n-1)所表示的全氟芳基。此處,碳數n並無特別限定,較佳為5~13,更佳為6。 Examples of the (per)halocycloalkyl group and the (per)haloaryl group in the ring formed by linking R f1 to R f3 or R f2 to R f3 include a halogenated structure of the above-mentioned Z ka cycloalkyl group. More preferably, it is a fluorocycloalkyl group represented by -C (n) F (2n-2) H and a perfluoroaryl group represented by -C (n) F (n-1) . Here, the carbon number n is not particularly limited, but is preferably 5 to 13, more preferably 6.

Rf2更佳為表示與Rf1相同的基團,或與Rf3連結而形成環。 More preferably, R f2 represents the same group as R f1 or is bonded to R f3 to form a ring.

拉電子基較佳為鹵素原子、或-C(Rf1)(Rf2)-Rf3所表示的鹵代(環)烷基或鹵代芳基,更佳為-C(CF3)2H或-C(CF3)2CH3The electron withdrawing group is preferably a halogen atom or a halogenated (cyclo)alkyl group or a halogenated aryl group represented by -C(R f1 )(R f2 )-R f3 , more preferably -C(CF 3 ) 2 H Or -C(CF 3 ) 2 CH 3 .

再者,上述拉電子基中,一部分氟原子可經其他拉電子 基所取代。 Furthermore, in the above-mentioned electron withdrawing group, a part of fluorine atoms may be pulled through other electrons. Substituted by the base.

Zka較佳為烷基、環烷基、醚基、羥基或拉電子基,更佳為烷基、環烷基或拉電子基。再者,醚基較佳為經烷基或環烷基等取代者、即烷基醚基等。拉電子基與上述拉電子基為相同含意。 Z ka is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group or an electron-withdrawing group, more preferably an alkyl group, a cycloalkyl group or an electron-withdrawing group. Further, the ether group is preferably an alkyl group or a cycloalkyl group or the like, that is, an alkyl ether group or the like. The electron withdrawing group has the same meaning as the above-mentioned electron withdrawing group.

作為Zka的鹵素原子可列舉氟原子、氯原子、溴原子及碘原子等,較佳為氟原子。 The halogen atom of Z ka may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

作為Zka的烷基可具有取代基,可為直鏈、分支的任一種。直鏈烷基較佳為碳數1~30,更佳為1~20,例如可列舉:甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基等。分支烷基較佳為碳數3~30,更佳為3~20,例如可列舉:異丙基、異丁基、第二丁基、第三丁基、異戊基、第三戊基、異己基、第三己基、異庚基、第三庚基、異辛基、第三辛基、異壬基、第三癸醯基(t-decanoyl)等。較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基等碳數1~4的基團。 The alkyl group as Z ka may have a substituent, and may be either a straight chain or a branched one. The linear alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and examples thereof include methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, and a positive group. Xinji, Zhengyiji, Zhengjiji, etc. The branched alkyl group preferably has a carbon number of 3 to 30, more preferably 3 to 20, and examples thereof include an isopropyl group, an isobutyl group, a second butyl group, a tert-butyl group, an isopentyl group, and a third pentyl group. Isohexyl, tert-hexyl, isoheptyl, third heptyl, isooctyl, trioctyl, isodecyl, t-decanoyl, and the like. A group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a t-butyl group is preferred.

Zka的環烷基可為單環型,亦可為多環型。後者的情況下,環烷基亦可為橋聯式。即,於該情形時,環烷基亦可具有橋聯結構。再者,環烷基中的碳原子的一部分可經氧原子等雜原子所取代。 The cycloalkyl group of Z ka may be a monocyclic type or a polycyclic type. In the latter case, the cycloalkyl group may also be bridged. That is, in this case, the cycloalkyl group may also have a bridge structure. Further, a part of the carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

單環型的環烷基較佳為碳數3~8的基團,例如可列舉環丙基、環丁基、環戊基、環己基及環辛基。 The monocyclic cycloalkyl group is preferably a group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group.

多環型的環烷基例如可列舉具有碳數5以上的雙環、三環或四環結構的基團。該多環型的環烷基較佳為碳數6~20的基團,例如可列舉:金剛烷基、降冰片基、異冰片基、莰基(camphanyl)、二環戊基、α-蒎基(α-pinel)、三環癸基、四環十二烷基及雄甾烷基(androstanyl)。 The polycyclic cycloalkyl group may, for example, be a group having a bicyclic, tricyclic or tetracyclic structure having a carbon number of 5 or more. The polycyclic cycloalkyl group is preferably a group having 6 to 20 carbon atoms, and examples thereof include an adamantyl group, a norbornyl group, an isobornyl group, a campanyl group, a dicyclopentyl group, and an α-fluorene group. A-pinel, tricyclodecyl, tetracyclododecyl and androstanyl.

該些環烷基例如可列舉由下式所表示的基團。 Examples of the cycloalkyl group include a group represented by the following formula.

上述脂環部分的較佳者可列舉:金剛烷基、降金剛烷 基、十氫萘基、三環癸基、四環十二烷基、降冰片基、雪松醇基、環己基、環庚基、環辛基、環癸基、環十二烷基。更佳為金剛烷基、十氫萘基、降冰片基、雪松醇基、環己基、環庚基、環辛基、環癸基、環十二烷基、三環癸基。 Preferred examples of the above alicyclic moiety include adamantyl and noradamantane. Base, decahydronaphthyl, tricyclodecyl, tetracyclododecyl, norbornyl, cedarol, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl. More preferred are adamantyl, decahydronaphthyl, norbornyl, cedarol, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl, tricyclodecyl.

該些脂環式結構的取代基可列舉:烷基、鹵素原子、羥基、烷氧基、羧基、烷氧基羰基。烷基較佳為甲基、乙基、丙基、異丙基、丁基等低級烷基,更佳為表示甲基、乙基、丙基、異丙基。上述烷氧基較佳可列舉:甲氧基、乙氧基、丙氧基、丁氧基等碳數1個~4個的基團。烷基及烷氧基可具有的取代基可列舉:羥基、鹵素原子、烷氧基(較佳為碳數1~4)等。 Examples of the substituent of the alicyclic structure include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group or a butyl group, and more preferably represents a methyl group, an ethyl group, a propyl group or an isopropyl group. The alkoxy group is preferably a group having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group or a butoxy group. Examples of the substituent which the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom, and an alkoxy group (preferably, a carbon number of 1 to 4).

Zka的芳基例如可列舉苯基及萘基。 Examples of the aryl group of Z ka include a phenyl group and a naphthyl group.

Zka的烷基、環烷基及芳基可更具有的取代基例如可列舉:羥基;鹵素原子;硝基;氰基;上述烷基;甲氧基、乙氧基、羥基乙氧基、丙氧基、羥基丙氧基、正丁氧基、異丁氧基、第二丁氧基及第三丁氧基等烷氧基;甲氧基羰基及乙氧基羰基等烷氧基羰基;苄基、苯乙基及枯基(cumyl)等芳烷基;芳烷氧基;甲醯基、乙醯基、丁醯基、苯甲醯基、桂皮醯基(cinnamyl)及戊醯基(valeryl)等醯基;丁醯氧基等醯氧基;烯基;乙烯氧基、丙烯氧基、烯丙氧基及丁烯氧基等烯氧基;上述芳基;苯氧基等芳氧基;以及苯甲醯氧基等芳氧基羰基。 Examples of the substituent which the alkyl group, the cycloalkyl group and the aryl group of Z ka may have include, for example, a hydroxyl group; a halogen atom; a nitro group; a cyano group; the above alkyl group; a methoxy group, an ethoxy group, a hydroxyethoxy group, Alkoxy groups such as propoxy, hydroxypropoxy, n-butoxy, isobutoxy, second butoxy and tert-butoxy; alkoxycarbonyl groups such as methoxycarbonyl and ethoxycarbonyl; Aralkyl group such as benzyl, phenethyl and cumyl; aralkyloxy; methyl, ethyl, butyl, benzylidene, cinnamyl and valeryl Anthracenyl; anthracenyloxy; aryloxy; aryloxy; aryloxy; aryloxy; And an aryloxycarbonyl group such as a benzyl methoxy group.

極性轉變基藉由鹼性顯影液的作用而分解並進行極性轉變,藉此可減小鹼性顯影後的樹脂組成物膜與水的後退接觸角。 The polar transition group is decomposed by the action of the alkaline developing solution and undergoes a polarity transition, whereby the receding contact angle of the resin composition film after alkali development with water can be reduced.

鹼性顯影後的樹脂組成物膜與水的後退接觸角較佳為於曝光時的溫度、通常為室溫23℃±3℃下且於濕度為45%±5%下為50°以下,更佳為40°以下,進而佳為35°以下,最佳為30°以下。 The receding contact angle of the resin composition film after alkali development with water is preferably at a temperature at the time of exposure, usually 23 ° C ± 3 ° C at room temperature and 50 ° or less at a humidity of 45% ± 5%, more It is preferably 40 or less, and more preferably 35 or less, and most preferably 30 or less.

所謂後退接觸角,是指液滴-基板界面上的接觸線後退時所測定的接觸角,通常已知於模擬動態狀態下的液滴的移動容易程度時有用。簡單而言,可定義為使自針尖端噴出的液滴噴附於基板上後,將該液滴再次吸入至針中時,液滴的界面後退時的接觸角,可使用通常被稱為擴張收縮法的接觸角的測定方法來進行測定。 The receding contact angle refers to a contact angle measured when the contact line on the droplet-substrate interface retreats, and is generally known to be useful when the droplet is easily moved in a simulated dynamic state. In short, it can be defined that when droplets ejected from the tip of the needle are sprayed onto the substrate, and the droplet is again sucked into the needle, the contact angle at which the interface of the droplet retreats can be used, which is generally called expansion. The measurement method of the contact angle of the shrinkage method was performed.

樹脂(Aa)對鹼性顯影液的水解速度較佳為0.001nm/sec以上,更佳為0.01nm/sec以上,進而佳為0.1nm/sec以上,最佳為1nm/sec以上。 The hydrolysis rate of the resin (Aa) to the alkaline developer is preferably 0.001 nm/sec or more, more preferably 0.01 nm/sec or more, further preferably 0.1 nm/sec or more, and most preferably 1 nm/sec or more.

此處,樹脂(Aa)對鹼性顯影液的水解速度為僅利用樹脂(Aa)來製造樹脂膜時的膜厚於23℃的氫氧化四甲基銨(Tetramethylammonium hydroxide,TMAH水溶液)(2.38質量%)中減少的速度。 Here, the hydrolysis rate of the resin (Aa) to the alkaline developer is a tetramethylammonium hydroxide (TAAH aqueous solution) having a film thickness of 23 ° C when the resin film is produced by using only the resin (Aa) (2.38 mass) Reduced speed in %).

通式(KA-1)中的內酯環結構更佳為具有下述(KA-1-1)~(KA-1-17)的任一個所表示的內酯結構的基團。另外,具有內酯結構的基團亦可直接鍵結於主鏈上。較佳的內酯結構為(KA-1-1)、(KA-1-4)、(KA-1-5)、(KA-1-6)、(KA-1-13)、(KA-1-14)、(KA-1-17)。 The lactone ring structure in the formula (KA-1) is more preferably a group having a lactone structure represented by any one of the following (KA-1-1) to (KA-1-17). In addition, a group having a lactone structure may be directly bonded to the main chain. Preferred lactone structures are (KA-1-1), (KA-1-4), (KA-1-5), (KA-1-6), (KA-1-13), (KA- 1-14), (KA-1-17).

以下,示出具有內酯結構的骨架的具體例,但不限定於此。 Specific examples of the skeleton having a lactone structure are shown below, but are not limited thereto.

內酯結構部分可具有取代基亦可不具有取代基。較佳的取代基可列舉:碳數1~8的烷基、碳數4~7的環烷基、碳數1~8的烷氧基、碳數2~8的烷氧基羰基、羧基、鹵素原子、羥基、氰基、酸分解性基等。更佳為碳數1~4的烷基、碳數5~6的環烷基、氰基、碳數2~4的烷氧基羰基、羧基、鹵素原子、羥基、酸分解性基。於存在多個取代基的情形時,可相同亦可不同,取代基彼此亦可鍵結而形成環。 The lactone moiety may or may not have a substituent. Preferred examples of the substituent include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, and a carboxyl group. A halogen atom, a hydroxyl group, a cyano group, an acid-decomposable group, or the like. More preferably, it is an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms, a cyano group, an alkoxycarbonyl group having 2 to 4 carbon atoms, a carboxyl group, a halogen atom, a hydroxyl group or an acid-decomposable group. In the case where a plurality of substituents are present, they may be the same or different, and the substituents may be bonded to each other to form a ring.

內酯結構亦有存在光學活性體者,可使用任一種光學活性體。另外,可單獨使用一種光學活性體,亦可將多種光學活性體混合使用。於主要使用一種光學活性體的情形時,其光學純度(對映體過量(enantiomeric excess,ee))較佳為90%以上,更佳為95%以上,最佳為98%以上。 The lactone structure also has an optically active body, and any optically active substance can be used. Further, one type of optically active substance may be used alone, or a plurality of types of optically active substances may be used in combination. In the case where an optically active substance is mainly used, the optical purity (enantiomeric excess (ee)) is preferably 90% or more, more preferably 95% or more, and most preferably 98% or more.

上述(KB-1)所表示的結構具有於靠近酯結構的位置上存在拉電子基的結構,故具有高的極性轉變能力。 The structure represented by the above (KB-1) has a structure in which an electron-withdrawing group exists at a position close to the ester structure, and thus has a high polarity conversion ability.

Xkb2較佳為鹵素原子、或上述-C(Rf1)(Rf2)Rf3所表示的鹵代(環)烷基或鹵代芳基。 X kb2 is preferably a halogen atom or a halogenated (cyclo)alkyl group or a halogenated aryl group represented by the above -C(R f1 )(R f2 )R f3 .

重複單元(c)所具有的至少2個極性轉變基更佳為下述通式(KY-1)所示的具有2個極性轉變基的部分結構。再者,通式(KY-1)所表示的結構為具有將該結構中的任意的氫原子去掉至少一個所得的一價以上的基團的基團。 The at least two polar transition groups of the repeating unit (c) are more preferably a partial structure having two polar transition groups represented by the following formula (KY-1). Further, the structure represented by the formula (KY-1) is a group having a monovalent or higher group obtained by removing at least one of any hydrogen atom in the structure.

通式(KY-1)中,Rky1、Rky4分別獨立地表示氫原子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚基、羥基、氰基、醯胺基或芳基。或者,Rky1、Rky4亦可與同一原子鍵結而形成雙鍵,例如Rky1、Rky4亦可與同一氧原子鍵結而形成羰基的一部分(=O)。 In the general formula (KY-1), R ky1 , R ky4 each independently represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyl group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, acyl Amine or aryl. Alternatively, R ky1, R ky4 may be bonded to the same atom form a double bond, e.g. R ky1, R ky4 the same may be bonded to an oxygen atom of the carbonyl portion (= O) is formed.

Rky2、Rky3分別獨立地為拉電子基,或者Rky1與Rky3連結形成內酯環並且Rky2為拉電子基。所形成的內酯環較佳為上述(KA-1-1)~(KA-1-17)的結構。拉電子基可列舉與上述式(KB-1) 中的Xkb1相同者,較佳為鹵素原子、或上述-C(Rf1)(Rf2)-Rf3所表示的鹵代(環)烷基或鹵代芳基。 R ky2, R ky3 each independently an electron withdrawing group, or R ky1 and R ky3 linked to form a lactone ring, and R ky2 is an electron withdrawing group. The lactone ring formed is preferably a structure of the above (KA-1-1) to (KA-1-17). The electron withdrawing group may be the same as X kb1 in the above formula (KB-1), and is preferably a halogen atom or a halogenated (cyclo)alkane represented by the above -C(R f1 )(R f2 )-R f3 . Base or halogenated aryl.

Rky1、Rky3及Rky4的至少2個亦可相互連結而形成單環結構或多環結構。 R ky1, R ky3 R ky4 and also at least two mutually connected to form a monocyclic or polycyclic structure.

Rkb1~Rkb4、nkb、nkb'分別與上述式(KB-1)中的Rkb1~Rkb4、nkb、nkb'為相同含意。 R kb1 ~ R kb4, nkb, nkb ' R kb1 respectively in the above formula (KB-1) ~ R kb4 , nkb, nkb' have the same meaning.

Rky1、Rky4具體可列舉與式(KA-1)中的Zka相同的基團。 R ky1, Z ka (KA- 1) of the formula R ky4 Specific examples thereof include the same groups.

Rky1與Rky3連結而形成的內酯環較佳為上述(KA-1-1)~(KA-1-17)的結構。拉電子基可列舉與上述式(KB-1)中的Xkb1相同者。 Preferred R ky1 lactone ring and R ky3 is formed by connecting the above-described structure (KA-1-1) ~ (KA -1-17) a. The electron withdrawing group is the same as X kb1 in the above formula (KB-1).

通式(KY-1)所表示的結構更佳為下述通式(KY-2)所表示的結構。再者,通式(KY-2)所表示的結構為具有將該結構中的任意的氫原子去掉至少一個所得的一價以上的基團的基團。 The structure represented by the formula (KY-1) is more preferably a structure represented by the following formula (KY-2). Further, the structure represented by the formula (KY-2) is a group having a monovalent or higher group obtained by removing at least one of any hydrogen atom in the structure.

式(KY-2)中, Rky6~Rky10分別獨立地表示氫原子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚基、羥基、氰基、醯胺基或芳基。 In the formula (KY-2), R ky6 to R ky10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group or a decylamine. Base or aryl.

Rky6~Rky10的2個以上亦可相互連結而形成單環結構或多環結構。 Two or more of R ky6 to R ky10 may be bonded to each other to form a single ring structure or a polycyclic structure.

Rky5表示拉電子基。拉電子基可列舉與上述式(KB-1)中的Xkb1的拉電子基相同者,較佳為鹵素原子、或上述-C(Rf1)(Rf2)-Rf3所表示的鹵代(環)烷基或鹵代芳基。 R ky5 represents the electron-based base. The electron withdrawing group may be the same as the electron withdrawing group of X kb1 in the above formula (KB-1), preferably a halogen atom or a halogen represented by the above -C(R f1 )(R f2 )-R f3 . (Cyclo)alkyl or haloaryl.

Rkb1、Rkb2、nkb與分別上述式(KB-1)中的Rkb1、Rkb2、nkb為相同含意。 R kb1, R kb2, nkb and R kb1 (KB-1) respectively above formulas, R kb2, nkb same meaning.

Rky5~Rky10具體可列舉與式(KA-1)中的Zka相同的基團。 Specific examples of R ky5 to R ky10 include the same groups as Z ka in the formula (KA-1).

式(KY-2)所表示的結構更佳為下述通式(KY-3)所表示的部分結構。 The structure represented by the formula (KY-2) is more preferably a partial structure represented by the following formula (KY-3).

通式(KY-3)中,Rs表示鏈狀或環狀伸烷基,於存在多個的情形時,可相同亦可不同。 In the formula (KY-3), Rs represents a chain or a cyclic alkyl group, and when it is present in a plurality of cases, it may be the same or different.

Ls表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵,於存在多個的情形時,可相同亦可不同。 Ls represents a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond, and may be the same or different when there are a plurality of cases.

ns表示-(Rs-Ls)-所表示的連結基的重複數,表示0~5的整數。 Ns represents the number of repetitions of the linking group represented by -(Rs-Ls)-, and represents an integer of 0 to 5.

Lky表示伸烷基、氧原子或硫原子。 L ky represents an alkyl group, an oxygen atom or a sulfur atom.

Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基。於Zka存在多個的情形時,多個Zka可相同亦可不同,Zka彼此亦可連結而形成環。 Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group or a pendant electron group. In the case where there is a plurality of Z ka, Z ka plurality may be identical or different, Z ka may link each other to form a ring.

nka表示0~10的整數。 Nka represents an integer from 0 to 10.

Rkb1及Rkb2分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基,Rkb1、Rkb2及Rky5的至少2個亦可相互連結而形成環。 R kb1 and R kb2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an electron-withdrawing group, and at least two of R kb1 , R kb2 and R ky5 may be bonded to each other to form a ring.

nkb表示0或1。 Nkb means 0 or 1.

Rky5表示拉電子基。 R ky5 represents the electron-based base.

*表示與重複單元的其餘部分的鍵結部位。 * indicates the bonding site with the rest of the repeating unit.

對通式(KY-3)加以更詳細說明。 The general formula (KY-3) will be described in more detail.

Zka、nka分別與上述通式(KA-1)為相同含意。Rky5與上述式(KY-2)為相同含意。 Z ka, nka respectively, in the general formula (KA-1) is the same meaning. R ky5 has the same meaning as the above formula (KY-2).

Rkb1、Rkb2、nkb分別與上述式(KB-1)中的Rkb1、Rkb2、nkb為相同含意。 R kb1, R kb2, nkb respectively R kb1 (KB-1) in the formula, R kb2, nkb same meaning.

如上所述,Lky表示伸烷基、氧原子或硫原子。Lky的伸烷基可列舉亞甲基、伸乙基等。Lky較佳為氧原子或亞甲基,更佳為亞甲基。 As described above, L ky represents an alkyl group, an oxygen atom or a sulfur atom. Examples of the alkyl group of L ky include a methylene group and an ethyl group. L ky is preferably an oxygen atom or a methylene group, more preferably a methylene group.

如上所述,Rs表示鏈狀或環狀伸烷基,於存在多個的情 形時,可相同亦可不同。 As described above, Rs represents a chain or a cyclic alkyl group, and there are a plurality of When it is shaped, it can be the same or different.

如上所述,Ls表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵,於存在多個的情形時,可相同亦可不同。 As described above, Ls represents a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond, and when it is plural, it may be the same or different.

ns表示-(Rs-Ls)-所表示的連結基的重複數,表示0~5的整數。ns較佳為0或1。 Ns represents the number of repetitions of the linking group represented by -(Rs-Ls)-, and represents an integer of 0 to 5. Ns is preferably 0 or 1.

重複單元(c)較佳為具有式(K0)所表示的結構。 The repeating unit (c) preferably has a structure represented by the formula (K0).

式中,Rk1表示氫原子、鹵素原子、羥基、烷基、環烷基、芳基或具有極性轉變基的基團。 In the formula, R k1 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or a group having a polar transition group.

Rk2表示烷基、環烷基、芳基或具有極性轉變基的基團。其中,Rk1、Rk2總體具有2個以上的極性轉變基。 R k2 represents an alkyl group, a cycloalkyl group, an aryl group or a group having a polar transition group. Among them, R k1 and R k2 have two or more polar transition groups in total.

再者,如上所述,直接鍵結於通式(K0)所表示的重複單元的主鏈上的酯基不包括在本發明的極性轉變基中。 Further, as described above, the ester group directly bonded to the main chain of the repeating unit represented by the formula (K0) is not included in the polar transition group of the present invention.

重複單元(c)只要為藉由加成聚合、縮合聚合、加成縮合等聚合所得的重複單元,則並無限定,較佳為藉由碳-碳雙鍵的加成聚合所得的重複單元。其例子可列舉:丙烯酸酯系重複單元(亦包含於α位、β位上具有取代基的系統)、苯乙烯系重複單 元(亦包含於α位、β位上具有取代基的系統)、乙烯醚系重複單元、降冰片烯系重複單元、馬來酸衍生物(馬來酸酐或其衍生物、馬來醯亞胺等)的重複單元等,較佳為丙烯酸酯系重複單元、苯乙烯系重複單元、乙烯醚系重複單元、降冰片烯系重複單元,更佳為丙烯酸酯系重複單元、乙烯醚系重複單元、降冰片烯系重複單元,最佳為丙烯酸酯系重複單元。 The repeating unit (c) is not limited as long as it is a repeating unit obtained by polymerization such as addition polymerization, condensation polymerization, addition condensation or the like, and is preferably a repeating unit obtained by addition polymerization of a carbon-carbon double bond. Examples thereof include an acrylate-based repeating unit (a system also having a substituent at the α-position and the β-position), and a styrene-based repeating unit. (including a system having a substituent at the α-position and the β-position), a vinyl ether repeating unit, a norbornene-based repeating unit, a maleic acid derivative (maleic anhydride or a derivative thereof, maleimide) The repeating unit or the like is preferably an acrylate-based repeating unit, a styrene-based repeating unit, a vinyl ether-based repeating unit, or a norbornene-based repeating unit, more preferably an acrylate-based repeating unit or a vinyl ether-based repeating unit. The norbornene-based repeating unit is preferably an acrylate-based repeating unit.

於本發明的一形態中,藉由樹脂(Aa)具有氟原子及矽原子的至少任一個,抗蝕劑表面的疏水性(水追隨性)提高,顯影殘渣(浮渣(scum))減少。 In one aspect of the invention, the resin (Aa) has at least one of a fluorine atom and a ruthenium atom, and the hydrophobicity (water followability) of the surface of the resist is improved, and the development residue (scum) is reduced.

再者,於本發明的一形態中,樹脂(Aa)可為具有多個極性轉變基、且具有氟原子及矽原子的至少任一個的樹脂,該氟原子可為通式(KB-1)中的Xkb1、Xkb2的拉電子基,亦可含有於後述重複單元(Aa-3)中。 Furthermore, in one aspect of the invention, the resin (Aa) may be a resin having a plurality of polar transition groups and having at least one of a fluorine atom and a ruthenium atom, and the fluorine atom may be a general formula (KB-1). The electron withdrawing groups of X kb1 and X kb2 in the above may also be contained in the repeating unit (Aa-3) described later.

於本發明的一形態中,樹脂(Aa)的氟原子或矽原子可含有於樹脂的主鏈中,亦可取代於側鏈上。 In one aspect of the invention, the fluorine atom or the ruthenium atom of the resin (Aa) may be contained in the main chain of the resin or may be substituted on the side chain.

以下示出重複單元(c)的具體例,但本發明不限定於此。Ra表示氫原子、氟原子、甲基或三氟甲基。 Specific examples of the repeating unit (c) are shown below, but the present invention is not limited thereto. Ra represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.

[化15] [化15]

[化16] [Chemistry 16]

[化17] [化17]

[化18] [化18]

[化20] [Chemistry 20]

於樹脂(Aa)含有重複單元(c)的情形時,相對於樹脂(Aa)中的所有重複單元,重複單元(c)的含有率較佳為10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 In the case where the resin (Aa) contains the repeating unit (c), the content of the repeating unit (c) is preferably from 10 mol% to 90 mol%, more preferably 30 mol%, based on all the repeating units in the resin (Aa). 85 mol%, and further preferably 50 mol% to 80 mol%.

相對於樹脂(Aa)中的所有重複單元,重複單元(c')的含有率較佳為10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 The content of the repeating unit (c') is preferably from 10 mol% to 90 mol%, more preferably from 30 mol% to 85 mol%, even more preferably from 50 mol% to 80 mol%, based on all the repeating units in the resin (Aa).

相對於樹脂(Aa)中的所有重複單元,重複單元(c*)的含有率較佳為10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 The content of the repeating unit (c*) is preferably from 10 mol% to 90 mol%, more preferably from 30 mol% to 85 mol%, even more preferably from 50 mol% to 80 mol%, based on all the repeating units in the resin (Aa).

相對於樹脂(Aa)中的所有重複單元,重複單元(c")的含有率較佳為10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 The content of the repeating unit (c") is preferably from 10 mol% to 90 mol%, more preferably from 30 mol% to 85 mol%, even more preferably from 50 mol% to 80 mol%, based on all the repeating units in the resin (Aa).

<重複單元(Aa3)> <Repeating unit (Aa3)>

於本發明的一形態中,樹脂(Aa)亦可更含有重複單元(Aa3),該重複單元(Aa3)具有選自由氟原子、含氟原子的基團、含矽原子的基團、碳數6以上的烷基、碳數5以上的環烷基、碳數6以 上的芳基及碳數7以上的芳烷基所組成的組群中的一個以上的基團。該重複單元(Aa3)為與上述重複單元(c)不同的重複單元。 In one aspect of the invention, the resin (Aa) may further contain a repeating unit (Aa3) having a group selected from a fluorine atom, a fluorine atom, a group containing a halogen atom, and a carbon number. 6 or more alkyl groups, 5 or more carbon atoms, and 6 carbon atoms One or more groups in the group consisting of an aryl group and an aralkyl group having 7 or more carbon atoms. This repeating unit (Aa3) is a repeating unit different from the above repeating unit (c).

就感度的觀點而言,重複單元(Aa3)較佳為具有氟原子、或含氟原子的基團。可認為,藉由樹脂(Aa)具有氟原子、或含氟原子的基團,樹脂(Aa)對極紫外線的吸收係數提高,另外樹脂(Aa)具有偏向存在於抗蝕劑膜表面的性質,故可於曝光時於經極紫外線更強烈地照射的膜表面,有效地吸收上述極紫外線的能量,結果感度提高。 From the viewpoint of sensitivity, the repeating unit (Aa3) is preferably a group having a fluorine atom or a fluorine atom. It is considered that the resin (Aa) has a fluorine atom or a fluorine atom-containing group, and the resin (Aa) has an absorption coefficient against extreme ultraviolet rays, and the resin (Aa) has a property of being biased on the surface of the resist film. Therefore, it is possible to efficiently absorb the energy of the above-mentioned extreme ultraviolet rays on the surface of the film which is irradiated more strongly by the ultraviolet rays at the time of exposure, and as a result, the sensitivity is improved.

含氟原子的基團可列舉:含氟原子的烷基、含氟原子的環烷基或含氟原子的芳基等。 The fluorine atom-containing group may, for example, be a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl group or a fluorine atom-containing aryl group.

含氟原子的烷基較佳可列舉碳數1~10、更佳為碳數1~4的含氟原子的烷基,為至少一個氫原子經氟原子取代的直鏈或分支烷基,可更具有氟原子以外的取代基。 The fluorine atom-containing alkyl group is preferably a fluorine atom-containing alkyl group having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms, and is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom. More has a substituent other than a fluorine atom.

含氟原子的環烷基為至少一個氫原子經氟原子取代的單環或多環的環烷基,可更具有氟原子以外的取代基。 The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may have a substituent other than a fluorine atom.

含氟原子的芳基可列舉:苯基、萘基等芳基的至少一個氫原子經氟原子取代而成的基團,可更具有氟原子以外的取代基。 The aryl group of the fluorine atom may be a group obtained by substituting at least one hydrogen atom of an aryl group such as a phenyl group or a naphthyl group with a fluorine atom, and may further have a substituent other than a fluorine atom.

含氟原子的烷基、含氟原子的環烷基及含氟原子的芳基較佳可列舉下述通式(F2)~通式(F4)所表示的基團,但本發明不限定於此。 The fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group are preferably a group represented by the following formula (F2) to formula (F4), but the invention is not limited thereto. this.

[化21] [Chem. 21]

通式(F2)~通式(F4)中,R57~R68分別獨立地表示氫原子、氟原子或烷基(直鏈或分支)。其中,R57~R61的至少一個、R62~R64的至少一個及R65~R68的至少一個分別獨立地表示氟原子或至少一個氫原子經氟原子取代的烷基(較佳為碳數1~4)。 In the general formulae (F2) to (F4), R 57 to R 68 each independently represent a hydrogen atom, a fluorine atom or an alkyl group (straight chain or branched). Wherein at least one of R 57 to R 61 , at least one of R 62 to R 64 and at least one of R 65 to R 68 each independently represent a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom (preferably Carbon number 1~4).

R57~R61及R65~R67較佳為全部為氟原子。R62、R63及R68較佳為至少一個氫原子經氟原子取代的烷基(較佳為碳數1~4),更佳為碳數1~4的全氟烷基。R62與R63亦可相互連結而形成環。 R 57 to R 61 and R 65 to R 67 are preferably all fluorine atoms. R 62 , R 63 and R 68 are preferably an alkyl group in which at least one hydrogen atom is substituted by a fluorine atom (preferably, a carbon number of 1 to 4), and more preferably a perfluoroalkyl group having a carbon number of 1 to 4. R 62 and R 63 may also be bonded to each other to form a ring.

通式(F2)所表示的基團的具體例例如可列舉:對氟苯基、五氟苯基、3,5-二(三氟甲基)苯基等。 Specific examples of the group represented by the formula (F2) include p-fluorophenyl group, pentafluorophenyl group, and 3,5-bis(trifluoromethyl)phenyl group.

通式(F3)所表示的基團的具體例可列舉:三氟甲基、五氟丙基、五氟乙基、七氟丁基、六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、九氟丁基、八氟異丁基、九氟己基、九氟-第三丁基、全氟異戊基、全氟辛基、全氟(三甲基)己基、2,2,3,3-四氟環丁基、全氟環己基等。較佳為六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、八氟異丁基、九氟-第三丁基、全氟異戊基, 更佳為六氟異丙基、七氟異丙基。 Specific examples of the group represented by the formula (F3) include trifluoromethyl, pentafluoropropyl, pentafluoroethyl, heptafluorobutyl, hexafluoroisopropyl, heptafluoroisopropyl, and hexafluoro. (2-methyl)isopropyl, nonafluorobutyl, octafluoroisobutyl, nonafluorohexyl, nonafluoro-tert-butyl, perfluoroisopentyl, perfluorooctyl, perfluoro(trimethyl Hexyl, 2,2,3,3-tetrafluorocyclobutyl, perfluorocyclohexyl, and the like. Preferred is hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro(2-methyl)isopropyl, octafluoroisobutyl, nonafluoro-tert-butyl, perfluoroisopentyl, More preferred is hexafluoroisopropyl or heptafluoroisopropyl.

通式(F4)所表示的基團的具體例例如可列舉-C(CF3)2OH、-C(C2F5)2OH、-C(CF3)(CH3)OH、-CH(CF3)OH等,較佳為-C(CF3)2OH。 Specific examples of the group represented by the formula (F4) include -C(CF 3 ) 2 OH, -C(C 2 F 5 ) 2 OH, -C(CF 3 )(CH 3 )OH, -CH. (CF 3 )OH or the like is preferably -C(CF 3 ) 2 OH.

含矽原子的基團可列舉烷基矽烷基結構(較佳為三烷基矽烷基)、環狀矽氧烷結構等。 The group containing a halogen atom may, for example, be an alkyl fluorenyl group structure (preferably a trialkyl decyl group), a cyclic oxirane structure or the like.

關於W3~W6的烷基矽烷基結構、或環狀矽氧烷結構具體可列舉下述通式(CS-1)~通式(CS-3)所表示的基團等。 Specific examples of the alkyl fluorenyl group structure or the cyclic oxime structure of W 3 to W 6 include a group represented by the following formula (CS-1) to formula (CS-3).

通式(CS-1)~通式(CS-3)中,R12~R26分別獨立地表示直鏈或分支烷基(較佳為碳數1~20)或環烷基(較佳為碳數3~20)。 In the general formula (CS-1) to the general formula (CS-3), R 12 to R 26 each independently represent a linear or branched alkyl group (preferably, a carbon number of 1 to 20) or a cycloalkyl group (preferably Carbon number 3~20).

L3~L5表示單鍵或二價連結基。二價連結基可列舉:選自由伸烷基、伸苯基、醚鍵、硫醚鍵、羰基、酯鍵、醯胺鍵、胺基甲酸酯鍵及脲鍵所組成的組群中的單獨一個或兩個以上的組合 (較佳為總碳數12以下)。 L 3 to L 5 represent a single bond or a divalent linking group. The divalent linking group may be exemplified by a group selected from the group consisting of alkylene, phenyl, ether, thioether, carbonyl, ester, amide, urethane, and urea linkages. One or more combinations (preferably having a total carbon number of 12 or less).

n表示1~5的整數。n較佳為2~4的整數。 n represents an integer from 1 to 5. n is preferably an integer of 2 to 4.

碳數6以上的烷基較佳可列舉碳數6~20、更佳為碳數6~15的直鏈或分支烷基,可更具有取代基(其中,不相當於氟原子、含氟原子的基團及含矽原子的基團)。 The alkyl group having 6 or more carbon atoms is preferably a linear or branched alkyl group having 6 to 20 carbon atoms, more preferably 6 to 15 carbon atoms, and may have a substituent (wherein, it is not equivalent to a fluorine atom or a fluorine atom). a group and a group containing a halogen atom).

碳數5以上的環烷基較佳可列舉碳數5~20、更佳為碳數5~15的環烷基,可更具有取代基(其中,不相當於氟原子、含氟原子的基團及含矽原子的基團)。 The cycloalkyl group having 5 or more carbon atoms is preferably a cycloalkyl group having 5 to 20 carbon atoms, more preferably 5 to 15 carbon atoms, and may have a substituent (wherein, a group which does not correspond to a fluorine atom or a fluorine atom) a group and a group containing a ruthenium atom).

碳數6以上的芳基較佳可列舉碳數6~20、更佳為碳數6~15的芳基,可更具有取代基(其中,不相當於氟原子、含氟原子的基團及含矽原子的基團)。 The aryl group having 6 or more carbon atoms is preferably an aryl group having 6 to 20 carbon atoms, more preferably 6 to 15 carbon atoms, and may have a substituent (wherein a group which does not correspond to a fluorine atom or a fluorine atom) a group containing a halogen atom).

該芳基可經至少一個碳數3以上的烷基、或至少一個碳數5以上的環烷基所取代,亦可進一步經該些基團以外的其他取代基(其中,不相當於氟原子、含氟原子的基團及含矽原子的基團)所取代。 The aryl group may be substituted with at least one alkyl group having 3 or more carbon atoms or at least one cycloalkyl group having 5 or more carbon atoms, or may further be substituted with other substituents other than the groups (wherein, it is not equivalent to a fluorine atom) Substituted by a fluorine atom-containing group and a halogen atom-containing group.

上述碳數3以上的烷基較佳可列舉碳數3~15、更佳為碳數3~10的直鏈或分支烷基。於經至少一個碳數3以上的烷基取代的芳基中,芳基較佳為經1個~9個的碳數3以上的烷基所取代,更佳為經1個~7個的碳數3以上的烷基所取代,進而佳為經1個~5個的碳數3以上的烷基所取代。 The alkyl group having 3 or more carbon atoms is preferably a linear or branched alkyl group having 3 to 15 carbon atoms, more preferably 3 to 10 carbon atoms. In the aryl group substituted with at least one alkyl group having 3 or more carbon atoms, the aryl group is preferably substituted with 1 to 9 carbon atoms having 3 or more carbon atoms, more preferably 1 to 7 carbon atoms. The alkyl group having 3 or more carbon atoms is substituted, and it is preferably substituted with one to five alkyl groups having 3 or more carbon atoms.

上述碳數5以上的環烷基較佳可列舉碳數5~20、更佳為碳數5~15的環烷基。於經至少一個碳數5以上的環烷基所取 代的芳基中,芳基較佳為經1個~5個的碳數5以上的環烷基所取代,更佳為經1個~4個的碳數5以上的環烷基所取代,進而佳為經1個~3個的碳數5以上的環烷基所取代。 The cycloalkyl group having 5 or more carbon atoms is preferably a cycloalkyl group having 5 to 20 carbon atoms, more preferably 5 to 15 carbon atoms. Taking at least one cycloalkyl group having 5 or more carbon atoms In the aryl group, the aryl group is preferably substituted by 1 to 5 cycloalkyl groups having 5 or more carbon atoms, more preferably 1 to 4 cycloalkyl groups having 5 or more carbon atoms. Further, it is preferably substituted by one to three cycloalkyl groups having 5 or more carbon atoms.

碳數7以上的芳烷基較佳可列舉碳數7~20、更佳為碳數7~15的芳烷基,可更具有取代基(其中,不相當於氟原子、含氟原子的基團及含矽原子的基團)。 The aralkyl group having 7 or more carbon atoms is preferably an aralkyl group having 7 to 20 carbon atoms, more preferably 7 to 15 carbon atoms, and may have a substituent (wherein a fluorine atom or a fluorine atom-free group is not contained). a group and a group containing a ruthenium atom).

樹脂(Aa)較佳為含有下述通式(C-Ia)~通式(C-Id)的任一個所表示的重複單元的至少一種作為上述重複單元(Aa3)。 The resin (Aa) preferably contains at least one of the repeating units represented by any one of the following general formulae (C-Ia) to (C-Id) as the repeating unit (Aa3).

式中,R10及R11分別獨立地表示氫原子、氟原子或烷基。該烷基較佳為碳數1~4的直鏈或分支的烷基,可具有取代基,具有取代基的烷基尤其可列舉氟化烷基。R10及R11較佳為分別獨立地為氫原子或甲基。 In the formula, R 10 and R 11 each independently represent a hydrogen atom, a fluorine atom or an alkyl group. The alkyl group is preferably a linear or branched alkyl group having 1 to 4 carbon atoms, and may have a substituent. The alkyl group having a substituent may, for example, be a fluorinated alkyl group. R 10 and R 11 are preferably each independently a hydrogen atom or a methyl group.

W3、W5及W6分別獨立地表示具有選自由含氟原子的基團、含矽原子的基團、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基及碳數7以上的芳烷基所組成的組群中的一個 以上的有機基。 W 3 , W 5 and W 6 each independently represent a group selected from a group containing a fluorine atom, a group containing a halogen atom, an alkyl group having 6 or more carbon atoms, a cycloalkyl group having 5 or more carbon atoms, and a carbon number of 6 or more. One or more organic groups in the group consisting of an aryl group and an aralkyl group having 7 or more carbon atoms.

W4表示具有選自由含氟原子的基團、含矽原子的基團、碳數3以上的烷基及碳數5以上的環烷基所組成的組群中的一個以上的有機基。 W 4 represents one or more organic groups having a group selected from the group consisting of a fluorine atom-containing group, a halogen atom-containing group, a carbon number of 3 or more, and a cycloalkyl group having 5 or more carbon atoms.

Ar11表示(r+1)價的芳香環基。 Ar 11 represents an (r+1)-valent aromatic ring group.

r表示1~10的整數。 r represents an integer from 1 to 10.

作為(r+1)價的芳香環基Ar11,r為1的情形時的二價芳香環基可具有取代基,例如可列舉:伸苯基、甲伸苯基、伸萘基、伸蒽基等碳數6~18的伸芳基等。 The divalent aromatic ring group in the case where the (r+1)-valent aromatic ring group Ar 11 and r are 1 may have a substituent, and examples thereof include a stretching phenyl group, a methylphenyl group, a naphthyl group, and a stretching group. The base has a carbon number of 6 to 18 and an extended aryl group.

r為2以上的整數的情形時的(r+1)價的芳香環基的具體例可較佳地列舉:自二價芳香環基的上述具體例中去掉(r-1)個任意的氫原子而成的基團。 A specific example of the (r+1)-valent aromatic ring group in the case where r is an integer of 2 or more is preferably exemplified by removing (r-1) arbitrary hydrogen from the above specific example of the divalent aromatic ring group. A group of atoms.

關於W3~W6的含氟原子的基團與上述含氟原子的基團中列舉者相同。 The fluorine atom-containing group of W 3 to W 6 is the same as those listed above for the fluorine atom-containing group.

關於W3~W6的含氟原子的基團可直接鍵結於上述通式(C-Ia)~通式(C-Id)所表示的重複單元,亦可進一步經由選自由伸烷基、伸苯基、醚鍵、硫醚鍵、羰基、酯鍵、醯胺鍵、胺基甲酸酯鍵及伸脲基所組成的組群中的基團或將這些的2個以上組合而成的基團,而鍵結於上述通式(C-Ia)~通式(C-Id)所表示的重複單元。 The fluorine atom-containing group of W 3 to W 6 may be directly bonded to the repeating unit represented by the above formula (C-Ia) to formula (C-Id), and may further be selected from an alkyl group selected from a group in a group consisting of a phenyl group, an ether bond, a thioether bond, a carbonyl group, an ester bond, a guanamine bond, a urethane bond, and a ureido group, or a combination of two or more of these a group bonded to a repeating unit represented by the above formula (C-Ia) to formula (C-Id).

關於W3~W6的含矽原子的基團與上述含矽原子的基團中列舉者相同。 The ruthenium atom-containing group of W 3 to W 6 is the same as those listed above for the ruthenium atom-containing group.

關於W3、W5、W6的碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基及碳數7以上的芳烷基分別與上述相同。 The alkyl group having 6 or more carbon atoms of W 3 , W 5 and W 6 , a cycloalkyl group having 5 or more carbon atoms, an aryl group having 6 or more carbon atoms, and an aralkyl group having 7 or more carbon atoms are each the same as described above.

關於W4的碳數3以上的烷基及碳數5以上的環烷基分別與關於上述經至少一個碳數3以上的烷基取代的芳香環基中的「碳數3以上的烷基」、及上述經至少一個碳數5以上的環烷基所取代的芳香環基中的「碳數5以上的環烷基」所說明者相同。 The alkyl group having 3 or more carbon atoms and the cycloalkyl group having 5 or more carbon atoms of W 4 and the "alkyl group having 3 or more carbon atoms" in the aromatic ring group substituted with at least one alkyl group having 3 or more carbon atoms, respectively. And the "cycloalkyl group having 5 or more carbon atoms" in the aromatic ring group substituted with at least one cycloalkyl group having 5 or more carbon atoms is the same as described above.

於曝光源為極紫外線(EUV光)的情形時,由於上述理由,W3、W5及W6亦較佳為分別獨立地表示具有選自由含矽原子的基團、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基及碳數7以上的芳烷基所組成的組群中的一個以上的有機基,W4亦較佳為表示具有選自由含矽原子的基團、碳數3以上的烷基及碳數5以上的環烷基所組成的組群中的一個以上的有機基。 In the case where the exposure source is extreme ultraviolet ray (EUV light), for the above reasons, W 3 , W 5 and W 6 preferably also independently represent an alkane having a carbon number of 6 or more selected from a group containing a ruthenium atom. One or more organic groups in the group consisting of a cycloalkyl group having 5 or more carbon atoms, an aryl group having 6 or more carbon atoms, and an aralkyl group having 7 or more carbon atoms, and W 4 is preferably also selected from the group consisting of One or more organic groups in the group consisting of a group containing a halogen atom, an alkyl group having 3 or more carbon atoms, and a cycloalkyl group having 5 or more carbon atoms.

W3、W5及W6較佳為分別獨立地為含氟原子的有機基、含矽原子的有機基、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基或碳數7以上的芳烷基,於曝光源為極紫外線(EUV光)的情形時,由於上述理由,亦較佳為含矽原子的有機基、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基或碳數7以上的芳烷基。 W 3 , W 5 and W 6 are each preferably an organic group containing a fluorine atom, an organic group containing a halogen atom, an alkyl group having 6 or more carbon atoms, a cycloalkyl group having 5 or more carbon atoms, and a carbon number of 6 or more. When the aryl group or the aralkyl group having 7 or more carbon atoms is in the form of extreme ultraviolet rays (EUV light), the above-mentioned reason is preferably an organic group containing a halogen atom or an alkyl group having 6 or more carbon atoms. A cycloalkyl group having 5 or more carbon atoms, an aryl group having 6 or more carbon atoms, or an aralkyl group having 7 or more carbon atoms.

W4較佳為含氟原子的有機基、含矽原子的有機基、碳數3以上的烷基或碳數5以上的環烷基,於曝光源為極紫外線(EUV光)的情形時,由於上述理由,亦較佳為含矽原子的有機 基、碳數3以上的烷基或碳數5以上的環烷基。 W 4 is preferably a fluorine atom-containing organic group, a halogen atom-containing organic group, a C 3 or more alkyl group or a C 5 or more cycloalkyl group, and when the exposure source is extremely ultraviolet (EUV light), For the above reasons, an organic group containing a halogen atom, an alkyl group having 3 or more carbon atoms, or a cycloalkyl group having 5 or more carbon atoms is preferable.

以下示出上述通式(C-Ia)~通式(C-Id)的任一個所表示的重複單元的具體例,但本發明不限定於此。 Specific examples of the repeating unit represented by any one of the above formula (C-Ia) to formula (C-Id) are shown below, but the present invention is not limited thereto.

具體例中,X1表示氫原子、-CH3、-F或-CF3In a specific example, X 1 represents a hydrogen atom, -CH 3 , -F or -CF 3 .

樹脂(Aa)較佳為具有芳基,更佳為含有具有芳基的重複單元。藉由樹脂(Aa)具有芳基,芳基吸收EUV光的頻帶外(out-of-band)光,可進一步抑制以下不良狀況:僅曝光部的表面因頻帶外光而感光,圖案的表面粗糙(特別是EUV曝光的情形),或圖案的剖面形狀成為T頂(T-top)形狀或倒錐形狀,應分離的圖案的表面彼此並未分離而產生橋接(bridge)部。 The resin (Aa) preferably has an aryl group, and more preferably contains a repeating unit having an aryl group. By the aryl group of the resin (Aa), the aryl group absorbs the out-of-band light of the EUV light, and the following disadvantages can be further suppressed: only the surface of the exposed portion is exposed to light outside the band, and the surface of the pattern is rough. (In particular, in the case of EUV exposure), or the cross-sectional shape of the pattern is a T-top shape or an inverted cone shape, and the surfaces of the patterns to be separated are not separated from each other to form a bridge portion.

於該情形時,可使上述重複單元(Aa3)具有芳基,或者亦可使樹脂(Aa)更含有上述重複單元(Aa3)以外的重複單元,並且該重複單元具有芳基。 In this case, the above repeating unit (Aa3) may have an aryl group, or the resin (Aa) may further contain a repeating unit other than the above repeating unit (Aa3), and the repeating unit has an aryl group.

上述重複單元(Aa3)具有芳基的情形時的重複單元(Aa3)較佳為下述通式(C-II)所表示的重複單元。 The repeating unit (Aa3) in the case where the repeating unit (Aa3) has an aryl group is preferably a repeating unit represented by the following formula (C-II).

上述通式中,R12表示氫原子、甲基、三氟甲基或氟原子。 In the above formula, R 12 represents a hydrogen atom, a methyl group, a trifluoromethyl group or a fluorine atom.

W7表示具有選自由含氟原子的基團、含矽原子的基團、碳數3以上的烷基、碳數5以上的環烷基所組成的組群中的一個以上的有機基。 W 7 represents one or more organic groups having a group selected from the group consisting of a fluorine atom-containing group, a halogen atom-containing group, a carbon number of 3 or more, and a cycloalkyl group having 5 or more carbon atoms.

L1表示單鍵或-COOL2-基。L2表示單鍵或伸烷基。 L 1 represents a single bond or a -COOL 2 - group. L 2 represents a single bond or an alkylene group.

n表示1~5的整數。 n represents an integer from 1 to 5.

關於W7的含氟原子的基團及含矽原子的基團分別與上述含氟原子的基團及含矽原子的基團中列舉者相同。 The fluorine atom-containing group and the ruthenium atom-containing group of W 7 are the same as those exemplified for the fluorine atom-containing group and the ruthenium atom-containing group.

關於W7的碳數3以上的烷基及碳數5以上的環烷基分別與關於上述經至少一個碳數3以上的烷基所取代的芳香環基中的「碳數3以上的烷基」、及上述經至少一個碳數5以上的環烷基所取代的芳香環基中的「碳數5以上的環烷基」所說明者相同。 The alkyl group having 3 or more carbon atoms and the cycloalkyl group having 5 or more carbon atoms of W 7 and the alkyl group having 3 or more carbon atoms in the aromatic ring group substituted with at least one alkyl group having 3 or more carbon atoms, respectively And the above-mentioned "cycloalkyl group having 5 or more carbon atoms" in the aromatic ring group substituted with at least one cycloalkyl group having 5 or more carbon atoms is the same.

W7較佳為三烷基矽烷基、三烷氧基矽烷基、含三烷基矽烷基的烷基、含三烷氧基矽烷基的烷基、碳數3以上的烷基或碳數5以上的環烷基。 W 7 is preferably a trialkylalkylene group, a trialkoxyalkylene group, a trialkylalkylalkyl group-containing alkyl group, a trialkoxyalkylalkyl group-containing alkyl group, a carbon number of 3 or more alkyl group or a carbon number of 5 The above cycloalkyl group.

作為W7的三烷基矽烷基、三烷氧基矽烷基、含三烷基矽烷基的烷基及含三烷氧基矽烷基的烷基中,鍵結於矽原子的烷基或烷氧基的碳數較佳為1~5,更佳為1~3。 Trialkyl silicon as the W 7 group, an alkyl trialkoxy silicon, trialkyl silicon-containing alkyl groups and silicon-containing trialkoxysilane group, the alkyl group bonded to silicon atoms or alkoxy The carbon number of the base is preferably from 1 to 5, more preferably from 1 to 3.

另外,作為W7的含三烷基矽烷基的烷基及含三烷氧基矽烷基的烷基中,鍵結於三烷基矽烷基或三烷氧基矽烷基的烷基的碳數較佳為1~5,更佳為1~3。 Further, in the alkyl group containing a trialkylsilyl group of W 7 and the alkyl group having a trialkoxyalkyl group, the carbon number of the alkyl group bonded to the trialkyldecyl group or the trialkoxyalkyl group is higher Good for 1~5, better for 1~3.

R12較佳為氫原子或甲基。 R 12 is preferably a hydrogen atom or a methyl group.

作為L2的伸烷基較佳為碳數1~5的伸烷基,更佳為碳數1~3的伸烷基。L2較佳為單鍵。 The alkylene group as L 2 is preferably an alkylene group having 1 to 5 carbon atoms, more preferably an alkylene group having 1 to 3 carbon atoms. L 2 is preferably a single bond.

W7較佳為含氟原子的有機基、含矽原子的有機基、碳數3以上的烷基或碳數5以上的環烷基。 W 7 is preferably a fluorine atom-containing organic group, a halogen atom-containing organic group, a C 3 or more alkyl group or a C 5 or more cycloalkyl group.

以下示出通式(C-II)所表示的重複單元的具體例,但不限定於該些具體例。 Specific examples of the repeating unit represented by the formula (C-II) are shown below, but are not limited to these specific examples.

[化27] [化27]

於樹脂(Aa)含有重複單元(Aa3)的情形時,重複單元(Aa3)相對於樹脂(Aa)的所有重複單元的含有率較佳為1mol%(莫耳百分比)~95mol%,更佳為3mol%~65mol%,進而佳為5mol%~35mol%。 In the case where the resin (Aa) contains the repeating unit (Aa3), the content of the repeating unit (Aa3) relative to all repeating units of the resin (Aa) is preferably from 1 mol% (% by mole) to 95 mol%, more preferably 3 mol% to 65 mol%, and further preferably 5 mol% to 35 mol%.

<重複單元(Aa4)> <Repeating unit (Aa4)>

於本發明的一形態中,樹脂(Aa)亦可更含有下述通式(Aa4)所表示的重複單元(以下亦稱為「重複單元(Aa4)」)。藉由樹脂(Aa)含有重複單元(Aa4),疏水性提高而可進一步提高偏向存在性,可提高帶外光的吸收。 In one embodiment of the present invention, the resin (Aa) may further contain a repeating unit represented by the following formula (Aa4) (hereinafter also referred to as "repeating unit (Aa4)"). When the resin (Aa) contains a repeating unit (Aa4), the hydrophobicity is improved, the biasing property can be further improved, and the absorption of the out-of-band light can be improved.

[化28] [化28]

通式(Aa4)中,Rb表示氫原子、烷基或鹵素原子。 In the formula (Aa4), Rb represents a hydrogen atom, an alkyl group or a halogen atom.

S1a表示取代基,於存在多個的情形時分別獨立。 S 1a represents a substituent, and is independent in the case where there are a plurality of cases.

p表示0~5的整數。 p represents an integer from 0 to 5.

對通式(Aa4)加以詳細說明。 The general formula (Aa4) will be described in detail.

如上所述,式中的Rb表示氫原子、烷基或鹵素原子,烷基可具有取代基。 As described above, Rb in the formula represents a hydrogen atom, an alkyl group or a halogen atom, and the alkyl group may have a substituent.

Rb較佳可列舉氫原子、甲基、三氟甲基、氟原子,更佳為氫原子。 Rb is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a fluorine atom, and more preferably a hydrogen atom.

如上所述,S1a表示取代基。 As described above, S 1a represents a substituent.

由S1a所表示的取代基例如可列舉:烷基、環烷基、烷氧基、醯基、醯氧基、鹵素原子、氰基、含矽原子的有機基、芳基、芳氧基、芳烷基、芳烷氧基、羥基、硝基、磺醯基胺基、烷硫基、芳硫基、芳烷硫基等。 Examples of the substituent represented by S 1a include an alkyl group, a cycloalkyl group, an alkoxy group, a decyl group, a decyloxy group, a halogen atom, a cyano group, an organic group containing a ruthenium atom, an aryl group, and an aryloxy group. An aralkyl group, an aralkyloxy group, a hydroxyl group, a nitro group, a sulfonylamino group, an alkylthio group, an arylthio group, an aralkylthio group or the like.

關於由S1a所表示的取代基,另外上述基團亦可為鍵結於二價連結基的基團,二價連結基例如可列舉:經取代或未經取代的伸烷基、經取代或未經取代的伸環烷基、-O-或將這些多個組 合而成的二價連結基。 With respect to the substituent represented by S 1a , the above-mentioned group may also be a group bonded to a divalent linking group, and the divalent linking group may, for example, be a substituted or unsubstituted alkylene group, substituted or Unsubstituted cycloalkylene, -O- or a divalent linking group which combines these multiples.

由S1a所表示的烷基例如較佳為碳原子數為1個~20個的烷基,具體可列舉:甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、己基等。烷基可更具有取代基。可進一步具有的較佳取代基例如可列舉:鹵素原子、烷氧基、環烷基、羥基、硝基、醯基、醯氧基、醯基胺基、磺醯基胺基、烷硫基、芳硫基、芳烷硫基、噻吩羰氧基、噻吩甲基羰氧基、吡咯啶酮殘基等雜環殘基等,較佳為碳數12以下的取代基。 The alkyl group represented by S 1a is preferably, for example, an alkyl group having 1 to 20 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. Third butyl, pentyl, hexyl and the like. The alkyl group may have a more substituent. Preferred substituents which may be further provided are, for example, a halogen atom, an alkoxy group, a cycloalkyl group, a hydroxyl group, a nitro group, a decyl group, a decyloxy group, a decylamino group, a sulfonylamino group, an alkylthio group, A heterocyclic residue such as an arylthio group, an aralkylthio group, a thiophenecarbonyloxy group, a thiophenemethylcarbonyloxy group or a pyrrolidone residue is preferably a substituent having a carbon number of 12 or less.

由S1a所表示的環烷基例如較佳為碳原子數為3個~10個的環烷基,具體可列舉:環丁基、環戊基、環己基、降冰片基、金剛烷基等。環烷基亦可更具有取代基。可進一步具有的較佳取代基例如除了作為上述S1a的烷基可具有的取代基以外,可列舉烷基。 The cycloalkyl group represented by S 1a is, for example, preferably a cycloalkyl group having 3 to 10 carbon atoms, and specific examples thereof include a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like. . The cycloalkyl group may also have a more substituent. A preferred substituent which may be further provided is, for example, an alkyl group, in addition to the substituent which the alkyl group of the above S 1a may have.

由S1a所表示的烷氧基例如較佳為碳原子數為1個~10個的烷氧基,具體可列舉:甲氧基、乙氧基、丙氧基、丁氧基等。烷氧基可具有進一步的取代基,此種取代基例如可列舉與上述作為S1a的烷基可具有的較佳取代基相同的基團。 The alkoxy group represented by S 1a is preferably, for example, an alkoxy group having 1 to 10 carbon atoms, and specific examples thereof include a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. The alkoxy group may have a further substituent, and examples of such a substituent include the same groups as the preferred substituent which the above-mentioned alkyl group as S 1a has.

由S1a所表示的醯基例如較佳為碳原子數2個~10個的基團,具體可列舉:乙醯基、丙醯基、丁醯基、異丁醯基等。醯基可具有進一步的取代基,此種取代基例如可列舉與上述作為S1a的烷基可具有的較佳取代基相同的基團。 The mercapto group represented by S 1a is, for example, preferably a group having 2 to 10 carbon atoms, and specific examples thereof include an ethyl group, a propyl group, a butyl group, an isobutyl group and the like. The mercapto group may have a further substituent, and such a substituent may, for example, be the same group as the preferred substituent which the above-mentioned alkyl group as S 1a may have.

由S1a所表示的醯氧基例如較佳為碳原子數為2個~10 個的基團。醯氧基中的醯基例如可列舉與上述醯基相同的具體例,可具有的取代基亦相同。 The decyloxy group represented by S 1a is preferably, for example, a group having 2 to 10 carbon atoms. Examples of the fluorenyl group in the decyloxy group include the same specific examples as the above fluorenyl group, and the substituents which may be the same are also the same.

由S1a所表示的芳基例如較佳為碳原子數為6個~10個的基團,具體可列舉:苯基、二甲苯基、甲苯甲醯基、枯烯基(cumenyl)、萘基、蒽基等。芳基亦可具有進一步的取代基,此種取代基例如可列舉與上述作為S1a的烷基或環烷基可具有的較佳取代基相同的基團。 The aryl group represented by S 1a is, for example, preferably a group having 6 to 10 carbon atoms, and specific examples thereof include a phenyl group, a xylyl group, a tolylmethyl group, a cumenyl group, and a naphthyl group. , 蒽基, etc. The aryl group may have a further substituent. Examples of such a substituent include the same groups as the preferred substituent which the above-mentioned alkyl group or cycloalkyl group of S 1a may have.

由S1a所表示的芳氧基、芳硫基例如較佳為碳原子數為2個~10個的基團。芳氧基及芳硫基中的芳基例如可列舉與上述芳基相同的具體例,可具有的取代基亦相同。 The aryloxy group or the arylthio group represented by S 1a is preferably a group having 2 to 10 carbon atoms, for example. Examples of the aryl group in the aryloxy group and the arylthio group include the same specific examples as the above-mentioned aryl group, and the substituents which may be the same may be the same.

由S1a所表示的芳烷基例如較佳為碳原子數為7個~15個的基團,具體可列舉苄基等。該些基團亦可具有進一步的取代基,此種取代基例如可列舉與上述作為S1a的烷基或環烷基可具有的較佳取代基相同的基團。 The aralkyl group represented by S 1a is preferably a group having 7 to 15 carbon atoms, and specific examples thereof include a benzyl group and the like. These groups may have a further substituent, and examples of such a substituent include the same groups as the preferred substituent which the above-mentioned alkyl group or cycloalkyl group of S 1a may have.

由S1a所表示的芳烷氧基、芳烷硫基例如較佳為碳原子數為7個~15個的基團。芳烷氧基及芳烷硫基中的芳烷基例如可列舉與上述芳烷基相同的具體例,可具有的取代基亦相同。 The aralkyloxy group or the aralkylthio group represented by S 1a is preferably, for example, a group having 7 to 15 carbon atoms. The aralkyl group in the aralkyloxy group and the aralkylthio group may, for example, be the same specific examples as the above-mentioned aralkyl group, and may have the same substituents.

由S1a所表示的烷硫基例如較佳為碳原子數為1個~10個的基團。烷硫基中的烷基例如可列舉與上述烷基相同的具體例,可具有的取代基亦相同。 The alkylthio group represented by S 1a is preferably, for example, a group having 1 to 10 carbon atoms. The alkyl group in the alkylthio group may, for example, be the same specific examples as the above alkyl group, and may have the same substituents.

由S1a所表示的鹵素原子可列舉氟原子、氯原子、溴原子、碘原子,較佳為氟原子及氯原子,最佳為氟原子。 The halogen atom represented by S 1a may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, preferably a fluorine atom or a chlorine atom, and most preferably a fluorine atom.

由S1a所表示的含矽原子的有機基中的有機基為含有至少一個碳原子的基團,亦可含有氧原子、氮原子、硫原子、矽原子、鹵素原子(例如氟原子、氯原子、溴原子等)等雜原子。該有機基較佳為碳原子數為1個~30個。 The organic group in the organic group containing a halogen atom represented by S 1a is a group containing at least one carbon atom, and may also contain an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom, a halogen atom (for example, a fluorine atom or a chlorine atom). , bromine atom, etc.) and other heteroatoms. The organic group preferably has from 1 to 30 carbon atoms.

含矽原子的有機基於一態樣中,較佳為由下述通式(S)所表示。 The organic group based on the ruthenium atom is preferably represented by the following general formula (S).

式中,R1、R2及R3分別獨立地表示氫原子、烷基、烯基、環烷基、烷氧基、芳基、芳烷基、鹵素原子。 In the formula, R 1 , R 2 and R 3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an alkoxy group, an aryl group, an aralkyl group or a halogen atom.

L表示單鍵或二價連結基。 L represents a single bond or a divalent linking group.

R1、R2及R3的烷基例如較佳為碳原子數為1~20的烷基,可具有取代基。 The alkyl group of R 1 , R 2 and R 3 is preferably, for example, an alkyl group having 1 to 20 carbon atoms, and may have a substituent.

R1、R2及R3的烯基例如較佳為碳原子數為2~10的烯基,可具有取代基。 The alkenyl group of R 1 , R 2 and R 3 is preferably an alkenyl group having 2 to 10 carbon atoms, and may have a substituent.

R1、R2及R3的環烷基例如較佳為碳原子數為3~10的環烷基,可具有取代基。 The cycloalkyl group of R 1 , R 2 and R 3 is preferably, for example, a cycloalkyl group having 3 to 10 carbon atoms, and may have a substituent.

R1、R2及R3的烷氧基例如較佳為碳原子數為1~10的烷氧基,可具有取代基。 The alkoxy group of R 1 , R 2 and R 3 is preferably, for example, an alkoxy group having 1 to 10 carbon atoms, and may have a substituent.

R1、R2及R3的芳基例如較佳為碳原子數為6~10的芳基,可具有取代基。 The aryl group of R 1 , R 2 and R 3 is preferably, for example, an aryl group having 6 to 10 carbon atoms, and may have a substituent.

R1、R2及R3的芳烷基例如較佳為碳原子數為7~15的芳烷基,可具有取代基。 The aralkyl group of R 1 , R 2 and R 3 is preferably, for example, an aralkyl group having 7 to 15 carbon atoms, and may have a substituent.

由L所表示的二價連結基例如可列舉:經取代或未經取代的伸烷基、-O-、-S-、-(C=O)-或將這些多個組合而成的二價連結基。 The divalent linking group represented by L may, for example, be a substituted or unsubstituted alkylene group, -O-, -S-, -(C=O)- or a combination of these two. Linkage base.

S1a於一態樣中,較佳為可具有取代基的烷基、鹵素原子或含矽原子的有機基,更佳為烷基、經鹵素原子取代的烷基或含矽原子的有機基,進而佳為烷基或下述通式(S-1)所表示的基團。 In a certain aspect, S 1a is preferably an alkyl group having a substituent, a halogen atom or an organic group containing a halogen atom, more preferably an alkyl group, an alkyl group substituted by a halogen atom or an organic group containing a halogen atom. Further, it is preferably an alkyl group or a group represented by the following formula (S-1).

式中,R11、R21及R31分別獨立地表示烷基。 In the formula, R 11 , R 21 and R 31 each independently represent an alkyl group.

L1表示單鍵或二價連結基。 L 1 represents a single bond or a divalent linking group.

作為R11、R21及R31的烷基與作為上文所述的通式(S)中的R1、R2及R3的烷基為相同含意,作為L1的二價連結基與作 為通式(S)中的L的二價連結基為相同含意。 The alkyl group as R 11 , R 21 and R 31 has the same meaning as the alkyl group of R 1 , R 2 and R 3 in the above formula (S), and is a divalent linking group of L 1 and The divalent linking group of L in the general formula (S) has the same meaning.

如上所述,p表示0~5的整數。p較佳為1~5的整數。 As described above, p represents an integer of 0 to 5. p is preferably an integer of 1 to 5.

以下,示出重複單元(Aa4)的具體例,但本發明不限定於該些具體例,另外,苯環上的取代基(對應於S1a基)的位置亦不限定於下述具體例。 Specific examples of the repeating unit (Aa4) are shown below. However, the present invention is not limited to these specific examples, and the position of the substituent on the benzene ring (corresponding to the S1a group) is not limited to the specific examples described below.

[化31] [化31]

[化32] [化32]

[化33] [化33]

[化35] [化35]

於樹脂(Aa)含有重複單元(Aa4)的情形時,相對於樹脂(Aa)中的所有重複單元,重複單元(Aa4)的含有率較佳為1mol%~99mol%,更佳為1mol%~70mol%,進而佳為1mol%~50mol%,尤佳為1mol%~30mol%。 When the resin (Aa) contains a repeating unit (Aa4), the content of the repeating unit (Aa4) is preferably from 1 mol% to 99 mol%, more preferably 1 mol%, based on all the repeating units in the resin (Aa). 70 mol%, further preferably 1 mol% to 50 mol%, particularly preferably 1 mol% to 30 mol%.

<具有藉由酸的作用而分解的基團的重複單元> <Repeating unit having a group decomposed by the action of an acid>

於本發明的一形態中,樹脂(Aa)較佳為更含有具有藉由酸的作用而分解的基團(以下亦稱為「酸分解性基」)的重複單元。 In one aspect of the invention, the resin (Aa) preferably further contains a repeating unit having a group which is decomposed by the action of an acid (hereinafter also referred to as "acid-decomposable group").

該重複單元所具有的酸分解性基較佳為於酸分解後生成酚或羧酸的基團,更佳為生成羧酸的基團。再者,於酸分解後生成酚的酸分解性基較佳為縮醛基。 The acid-decomposable group of the repeating unit is preferably a group which forms a phenol or a carboxylic acid after decomposition of an acid, and more preferably a group which forms a carboxylic acid. Further, the acid-decomposable group which forms a phenol after acid decomposition is preferably an acetal group.

於本發明的一形態中,樹脂(Aa)可含有的具有酸分解性基的重複單元例如可列舉:後述樹脂(Ab)中說明的通式(A1)、通式(A2)或通式(A3)所表示的重複單元。 In one embodiment of the present invention, the repeating unit having an acid-decomposable group which may be contained in the resin (Aa) may, for example, be the formula (A1), formula (A2) or formula (described in the above-mentioned resin (Ab). A3) Representation of the repeating unit.

另外,於本發明的一形態中,具有於酸分解後生成羧酸 的酸分解性基的重複單元較佳為下述通式(Aa1)或通式(Aa2)所表示的重複單元。 Further, in one aspect of the invention, the carboxylic acid is formed after the acid is decomposed. The repeating unit of the acid-decomposable group is preferably a repeating unit represented by the following formula (Aa1) or formula (Aa2).

通式(Aa1)中,R'表示氫原子或烷基。 In the formula (Aa1), R' represents a hydrogen atom or an alkyl group.

L表示單鍵或二價連結基。 L represents a single bond or a divalent linking group.

R1表示氫原子或一價取代基。 R 1 represents a hydrogen atom or a monovalent substituent.

R2表示一價取代基。R1與R2亦可相互鍵結而與式中的氧原子一起形成環。 R 2 represents a monovalent substituent. R 1 and R 2 may also be bonded to each other to form a ring together with an oxygen atom in the formula.

R3表示氫原子、烷基或環烷基。 R 3 represents a hydrogen atom, an alkyl group or a cycloalkyl group.

通式(Aa2)中,Ra表示氫原子、烷基、氰基或鹵素原子。 In the formula (Aa2), Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom.

L1表示單鍵或二價連結基。 L 1 represents a single bond or a divalent linking group.

R1及R2分別獨立地表示烷基。 R 1 and R 2 each independently represent an alkyl group.

R11及R12分別獨立地表示烷基,R13表示氫原子或烷基。R11、 R12及R13的任意2個亦可相互連結而形成環。 R 11 and R 12 each independently represent an alkyl group, and R 13 represents a hydrogen atom or an alkyl group. Any two of R 11 , R 12 and R 13 may be bonded to each other to form a ring.

如上所述,通式(Aa1)所表示的重複單元(以下亦稱為「重複單元(Aa1)」)、與通式(Aa2)所表示的重複單元(以下亦稱為「重複單元(Aa2)」)均對酸的作用的反應速度高,但重複單元(Aa1)對酸的作用的反應速度更高。因此,就高感度化的觀點而言,樹脂(Aa)更佳為含有重複單元(Aa1)。 As described above, the repeating unit represented by the formula (Aa1) (hereinafter also referred to as "repeating unit (Aa1)") and the repeating unit represented by the formula (Aa2) (hereinafter also referred to as "repeating unit (Aa2)") ") The reaction rate of the action of the acid is high, but the reaction rate of the repeating unit (Aa1) to the action of the acid is higher. Therefore, from the viewpoint of high sensitivity, the resin (Aa) more preferably contains a repeating unit (Aa1).

以下,對重複單元(Aa1)及重複單元(Aa2)加以詳細說明。 Hereinafter, the repeating unit (Aa1) and the repeating unit (Aa2) will be described in detail.

<重複單元(Aa1)> <Repeating unit (Aa1)>

首先,對通式(Aa1)所表示的重複單元加以說明。 First, the repeating unit represented by the formula (Aa1) will be described.

上述通式(Aa1)中,R'的烷基較佳為碳數1~10的烷基,更佳為碳數1~5的烷基,進而佳為碳數1~3的烷基,特佳為碳數1或2的烷基(即甲基或乙基)。R'的烷基的具體例例如可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基及第三丁基等。 In the above formula (Aa1), the alkyl group of R' is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms, and further preferably an alkyl group having 1 to 3 carbon atoms. Preferred is an alkyl group having 1 or 2 carbon atoms (i.e., methyl or ethyl). Specific examples of the alkyl group of R' include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a second butyl group, and a third butyl group.

R'較佳為氫原子或碳數1~5的烷基,更佳為氫原子或 碳數1~3的烷基,進而佳為氫原子、甲基或乙基,尤佳為氫原子。 R' is preferably a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, more preferably a hydrogen atom or The alkyl group having 1 to 3 carbon atoms is preferably a hydrogen atom, a methyl group or an ethyl group, and particularly preferably a hydrogen atom.

L所表示的二價連結基可列舉:伸烷基、芳香環基、伸環烷基、-COO-L1'-、-O-L1'-、-CONH-、將這些的2個以上組合而形成的基團等。此處,L1'表示伸烷基(較佳為碳數1~20)、伸環烷基(較佳為碳數3~20)、具有內酯結構的基團、芳香環基、將伸烷基與芳香環基組合而成的基團。 Examples of the divalent linking group represented by L include an alkylene group, an aromatic ring group, a cycloalkyl group, -COO-L 1 '-, -OL 1 '-, and -CONH-, and two or more of these are combined. Formation of groups, etc. Here, L 1 ' represents an alkylene group (preferably having a carbon number of 1 to 20), a cycloalkyl group (preferably having a carbon number of 3 to 20), a group having a lactone structure, an aromatic ring group, and a stretching group. a group in which an alkyl group is combined with an aromatic ring group.

作為L所表示的二價連結基的伸烷基較佳可列舉:亞甲基、伸乙基、伸丙基、伸丁基、伸己基、伸辛基等碳數1~8的伸烷基。更佳為碳數1~4的伸烷基,尤佳為碳數1或2的伸烷基。 The alkylene group as the divalent linking group represented by L is preferably a methylene group, an ethyl group, a propyl group, a butyl group, a hexyl group, a decyl group, or the like. . More preferably, it is an alkylene group having 1 to 4 carbon atoms, and particularly preferably an alkylene group having 1 or 2 carbon atoms.

作為L所表示的二價連結基的伸環烷基較佳為碳數3~20的伸環烷基,例如可列舉:伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環庚基、伸環辛基、伸降冰片基或伸金剛烷基。 The cycloalkyl group having a divalent linking group represented by L is preferably a cycloalkyl group having 3 to 20 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentylene group, and a cyclohexyl group. , stretching ring heptyl, stretching cyclooctyl, stretching borneol or stretching adamantyl.

作為L所表示的二價連結基的芳香環基可列舉以下基團作為較佳例:苯環基、萘環基等碳數6~18(更佳為碳數6~10)的芳香環基,或含有例如噻吩環、呋喃環、吡咯環、苯并噻吩環、苯并呋喃環、苯并吡咯環、三嗪環、咪唑環、苯并咪唑環、三唑環、噻二唑環、噻唑環等雜環的芳香環基,尤佳為苯環基。 The aromatic ring group which is a divalent linking group represented by L is preferably an aromatic ring group having a carbon number of 6 to 18 (more preferably 6 to 10 carbon atoms) such as a benzene ring group or a naphthalene ring group. Or containing, for example, a thiophene ring, a furan ring, a pyrrole ring, a benzothiophene ring, a benzofuran ring, a benzopyrrole ring, a triazine ring, an imidazole ring, a benzimidazole ring, a triazole ring, a thiadiazole ring, a thiazole The aromatic ring group of the heterocyclic ring is preferably a benzene ring group.

L1'所表示的伸烷基、伸環烷基及芳香環基的定義及較佳範圍與作為L所表示的二價連結基的伸烷基、伸環烷基及芳香環基相同。 The definition and preferred range of the alkylene group, the extended cycloalkyl group and the aromatic ring group represented by L 1 ' are the same as those of the alkylene group, the extended cycloalkyl group and the aromatic ring group which are the divalent linking groups represented by L.

L1'所表示的具有內酯結構的基團只要具有內酯結構,則可任意使用,較佳為5員環~7員環內酯結構,且較佳為於5員環 ~7員環內酯結構上以形成雙環結構、螺環結構的形式縮環有其他環結構。例如可列舉後述KA-1-1~KA-1-17,較佳為KA-1-1、KA-1-4、KA-1-5、KA-1-17。 The group having a lactone structure represented by L 1 ' may be optionally used as long as it has a lactone structure, preferably a 5-membered ring to 7-membered ring lactone structure, and preferably a 5-membered ring to a 7-membered ring. The lactone is structurally condensed in the form of a bicyclic structure or a spiro ring structure with other ring structures. For example, KA-1-1 to KA-1-17 which will be described later is preferable, and KA-1-1, KA-1-4, KA-1-5, and KA-1-17 are preferable.

L1'所表示的將伸烷基與芳香環基組合而成的基團中的伸烷基及芳香族基的定義及較佳範圍與作為L所表示的二價連結基的伸烷基及芳香環基相同。 The definition and preferred range of the alkylene group and the aromatic group in the group in which the alkyl group and the aromatic ring group are combined, represented by L 1 ', and the alkylene group as the divalent linking group represented by L and The aromatic ring group is the same.

L較佳為單鍵、芳香環基、降冰片烷環基或金剛烷環基,更佳為單鍵、降冰片烷環基或金剛烷環基,進而佳為單鍵或降冰片烷環基,尤佳為單鍵。 L is preferably a single bond, an aromatic ring group, a norbornane ring group or an adamantane ring group, more preferably a single bond, a norbornane ring group or an adamantane ring group, and thus preferably a single bond or a norbornane ring group. , especially good for a single button.

R1的一價取代基較佳為*-C(R111)(R112)(R113)所表示的基團。*表示連結於通式(Aa1)所表示的重複單元內的碳原子的結合鍵。R111~R113分別獨立地表示氫原子、烷基、環烷基、芳基、芳烷基或雜環基。 The monovalent substituent of R 1 is preferably a group represented by *-C(R 111 )(R 112 )(R 113 ). * represents a bond bonding to a carbon atom in a repeating unit represented by the formula (Aa1). R 111 to R 113 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or a heterocyclic group.

R111~R113的烷基較佳為碳數1~15的烷基,更佳為碳數1~10的烷基,進而佳為碳數1~6的烷基。R111~R113的烷基的具體例例如可列舉:甲基、乙基、丙基、異丙基、正丁基、第二丁基、第三丁基、新戊基、己基、2-乙基己基、辛基及十二烷基等,R111~R113的烷基較佳為甲基、乙基、丙基、異丙基或第三丁基。 The alkyl group of R 111 to R 113 is preferably an alkyl group having 1 to 15 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and still more preferably an alkyl group having 1 to 6 carbon atoms. Specific examples of the alkyl group of R 111 to R 113 include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, second butyl group, tert-butyl group, neopentyl group, hexyl group, and 2- The alkyl group of R 111 to R 113 is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group or a tert-butyl group, such as ethylhexyl, octyl or dodecyl.

R111~R113的至少2個分別獨立地表示烷基、環烷基、芳基、芳烷基或雜環基,較佳為R111~R113全部表示烷基、環烷基、芳基、芳烷基或雜環基。 At least two of R 111 to R 113 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or a heterocyclic group, and preferably R 111 to R 113 all represent an alkyl group, a cycloalkyl group or an aryl group. , aralkyl or heterocyclic group.

R111~R113的環烷基可為單環型,亦可為多環型,較佳為碳數3~15的環烷基,更佳為碳數3~10的環烷基,進而佳為碳數3~6的環烷基。R111~R113的環烷基的具體例例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、十氫萘基、環癸基、1-金剛烷基、2-金剛烷基、1-降冰片基及2-降冰片基等。R111~R113的環烷基較佳為環丙基、環戊基或環己基。 The cycloalkyl group of R 111 to R 113 may be a monocyclic type or a polycyclic type, preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms, and further preferably It is a cycloalkyl group having 3 to 6 carbon atoms. Specific examples of the cycloalkyl group of R 111 to R 113 include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a decahydronaphthyl group, a cyclodecyl group, and 1- Adamantyl, 2-adamantyl, 1-norbornyl and 2-norbornyl. The cycloalkyl group of R 111 to R 113 is preferably a cyclopropyl group, a cyclopentyl group or a cyclohexyl group.

R111~R113的芳基較佳為碳數6~15的芳基,更佳為碳數6~12的芳基,亦包含多個芳香環經由單鍵相互連結的結構(例如聯苯基、三聯苯基)。R111~R113的芳基的具體例例如可列舉:苯基、萘基、蒽基、聯苯基、三聯苯基等。R111~R113的芳基較佳為苯基、萘基或聯苯基。 The aryl group of R 111 to R 113 is preferably an aryl group having 6 to 15 carbon atoms, more preferably an aryl group having 6 to 12 carbon atoms, and a structure in which a plurality of aromatic rings are linked to each other via a single bond (for example, a biphenyl group) , terphenyl). Specific examples of the aryl group of R 111 to R 113 include a phenyl group, a naphthyl group, an anthracenyl group, a biphenyl group, and a terphenyl group. The aryl group of R 111 to R 113 is preferably a phenyl group, a naphthyl group or a biphenyl group.

R111~R113的芳烷基較佳為碳數6~20的芳烷基,更佳為碳數7~12的芳烷基。R111~R113的芳烷基的具體例例如可列舉:苄基、苯乙基、萘基甲基、萘基乙基等。 The aralkyl group of R 111 to R 113 is preferably an aralkyl group having 6 to 20 carbon atoms, more preferably an aralkyl group having 7 to 12 carbon atoms. Specific examples of the aralkyl group of R 111 to R 113 include a benzyl group, a phenethyl group, a naphthylmethyl group, and a naphthylethyl group.

R111~R113的雜環基較佳為碳數6~20的雜環基,更佳為碳數6~12的雜環基。R111~R113的雜環基的具體例例如可列舉:吡啶基、吡嗪基、四氫呋喃基、四氫吡喃基、四氫噻吩基、哌啶基、哌嗪基、呋喃基、吡喃基、苯并二氫哌喃基(chromanyl)等。 The heterocyclic group of R 111 to R 113 is preferably a heterocyclic group having 6 to 20 carbon atoms, more preferably a heterocyclic group having 6 to 12 carbon atoms. Specific examples of the heterocyclic group of R 111 to R 113 include pyridyl, pyrazinyl, tetrahydrofuranyl, tetrahydropyranyl, tetrahydrothiophenyl, piperidinyl, piperazinyl, furyl, and pyran. Base, chromanyl and the like.

作為R111~R113的烷基、環烷基、芳基、芳烷基及雜環基可更具有取代基。 The alkyl group, the cycloalkyl group, the aryl group, the arylalkyl group and the heterocyclic group of R 111 to R 113 may have a further substituent.

作為R111~R113的烷基可更具有的取代基例如可列舉: 環烷基、芳基、胺基、醯胺基、醯脲基、胺基甲酸乙酯基、羥基、羧基、鹵素原子、烷氧基、芳烷氧基、硫醚基、醯基、醯氧基、烷氧基羰基、氰基及硝基等。上述取代基彼此亦可相互鍵結而形成環,上述取代基彼此相互鍵結而形成環時的環可列舉碳數3~10的環烷基或苯基。 Examples of the substituent which the alkyl group of R 111 to R 113 may have include, for example, a cycloalkyl group, an aryl group, an amine group, a decylamino group, a guanyl urea group, an amino urethane group, a hydroxyl group, a carboxyl group, and a halogen atom. Alkoxy, aralkyloxy, thioether, decyl, decyloxy, alkoxycarbonyl, cyano and nitro groups. The substituents may be bonded to each other to form a ring, and the ring in which the substituents are bonded to each other to form a ring may, for example, be a cycloalkyl group having 3 to 10 carbon atoms or a phenyl group.

作為R111~R113的環烷基可更具有的取代基可列舉:烷基、及上文中作為R111~R113的烷基可更具有的取代基的具體例所述的各基團。 The cycloalkyl group of R 111 ~ R 113 may further have a substituent group include: alkyl groups, and each group above as alkyl group R 111 ~ R 113 may have a more specific example of the substituent group.

再者,環烷基可更具有的取代基的碳數較佳為1~8。 Further, the substituent which the cycloalkyl group may have more preferably has 1 to 8 carbon atoms.

作為R111~R113的芳基、芳烷基及雜環基可更具有的取代基例如可列舉:硝基、氟原子等鹵素原子、羧基、羥基、胺基、氰基、烷基(較佳為碳數1~15)、烷氧基(較佳為碳數1~15)、環烷基(較佳為碳數3~15)、芳基(較佳為碳數6~14)、烷氧基羰基(較佳為碳數2~7)、醯基(較佳為碳數2~12)、及烷氧基羰氧基(較佳為碳數2~7)等。 Examples of the substituent which the aryl group, the aralkyl group and the heterocyclic group of R 111 to R 113 may further include, for example, a halogen atom such as a nitro group or a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group or an alkyl group. Preferably, the carbon number is 1 to 15), the alkoxy group (preferably having a carbon number of 1 to 15), the cycloalkyl group (preferably having a carbon number of 3 to 15), and the aryl group (preferably having a carbon number of 6 to 14). The alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), a mercapto group (preferably having 2 to 12 carbon atoms), and an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms) may be mentioned.

R111~R113的至少2個亦可相互鍵結而形成環。 At least two of R 111 to R 113 may be bonded to each other to form a ring.

於R111~R113的至少2個相互鍵結而形成環的情形時,所形成的環例如可列舉:四氫吡喃環、環戊烷環、環己烷環、金剛烷環、降冰片烯環、降冰片烷環等。該些環可具有取代基,可具有的取代基可列舉:烷基、及上文中作為R111~R113的烷基可更具有的取代基的具體例所述的各基團。 In the case where at least two of R 111 to R 113 are bonded to each other to form a ring, examples of the ring to be formed include a tetrahydropyran ring, a cyclopentane ring, a cyclohexane ring, an adamantane ring, and a norbornene. An olefin ring, a norbornane ring, and the like. These rings may have a substituent, and examples of the substituent which may be exemplified are the alkyl group and the respective groups described above as specific examples of the substituent which the alkyl group of R 111 to R 113 may have.

於R111~R113全部相互鍵結而形成環的情形時,所形成 的環例如可列舉:金剛烷環、降冰片烷環、降冰片烯環、雙環[2,2,2]辛烷環、雙環[3,1,1]庚烷環。其中,尤佳為金剛烷環。該些環可具有取代基,可具有的取代基可列舉:烷基、及上文中作為R111~R113的烷基可更具有的取代基的具體例所述的各基團。 In the case where all of R 111 to R 113 are bonded to each other to form a ring, examples of the ring to be formed include an adamantane ring, a norbornane ring, a norbornene ring, and a bicyclo[2,2,2]octane ring. , bicyclo[3,1,1]heptane ring. Among them, it is especially preferred to be an adamantane ring. These rings may have a substituent, and examples of the substituent which may be exemplified are the alkyl group and the respective groups described above as specific examples of the substituent which the alkyl group of R 111 to R 113 may have.

於本發明的一形態中,R2的一價取代基較佳為*-M-Q所表示的基團。*表示連結於通式(Aa1)中的氧原子的結合鍵。M表示單鍵或二價連結基。Q表示烷基、環烷基、芳基或雜環基。於本發明的一形態中,較佳為R2不含氟原子。 In one embodiment of the invention, the monovalent substituent of R 2 is preferably a group represented by *-MQ. * represents a bond bonding to an oxygen atom in the formula (Aa1). M represents a single bond or a divalent linking group. Q represents an alkyl group, a cycloalkyl group, an aryl group or a heterocyclic group. In one aspect of the invention, it is preferred that R 2 does not contain a fluorine atom.

作為M的二價連結基例如為伸烷基(較佳為碳數1~8的伸烷基,例如亞甲基、伸乙基、伸丙基、伸丁基、伸己基或伸辛基)、伸環烷基(較佳為碳數3~15的伸環烷基,例如伸環戊基或伸環己基)、-S-、-O-、-CO-、-CS-、-SO2-、-N(R0)-或這些的2種以上的組合,較佳為總碳數20以下的基團。此處,R0為氫原子或烷基(例如碳數1~8的烷基,具體而言為甲基、乙基、丙基、正丁基、第二丁基、己基及辛基等)。 The divalent linking group as M is, for example, an alkylene group (preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethyl group, a propyl group, a butyl group, a hexyl group or a decyl group). a cycloalkyl group (preferably a cycloalkyl group having a carbon number of 3 to 15, such as a cyclopentyl group or a cyclohexyl group), -S-, -O-, -CO-, -CS-, -SO 2 -, -N(R 0 )- or a combination of two or more of these, preferably a group having a total carbon number of 20 or less. Here, R 0 is a hydrogen atom or an alkyl group (for example, an alkyl group having 1 to 8 carbon atoms, specifically, a methyl group, an ethyl group, a propyl group, a n-butyl group, a second butyl group, a hexyl group, an octyl group, etc.) .

M較佳為單鍵、伸烷基或包含伸烷基與-O-、-CO-、-CS-及-N(R0)-的至少一個的組合的二價連結基,更佳為單鍵、伸烷基或包含伸烷基與-O-的組合的二價連結基。此處,R0與上述R0為相同含意。 M is preferably a single bond, an alkylene group or a divalent linking group comprising a combination of an alkyl group and at least one of -O-, -CO-, -CS- and -N(R 0 )-, more preferably a single A bond, an alkyl group or a divalent linking group comprising a combination of an alkyl group and -O-. Here, R 0 and R 0 is the same meaning as above.

M可更具有取代基,M可更具有的取代基與上述R111~R113的烷基可具有的取代基相同。 M may have a more substituent, and M may have a substituent which is the same as the substituent which the above alkyl group of R 111 to R 113 may have.

作為Q的烷基的具體例及較佳例例如與關於上述作為 R111~R113的烷基所記載者相同。 Specific examples and preferred examples of the alkyl group as Q are the same as those described for the alkyl group as R 111 to R 113 described above.

作為Q的環烷基可為單環型,亦可為多環型。該環烷基的碳數較佳為設定為3~10。該環烷基例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基、環辛基、1-金剛烷基、2-金剛烷基、1-降冰片基、2-降冰片基、冰片基、異冰片基、4-四環[6.2.1.13,6.02,7]十二烷基、8-三環[5.2.1.02,6]癸基、2-雙環[2.2.1]庚基。其中,較佳為環戊基、環己基、2-金剛烷基、8-三環[5.2.1.02,6]癸基、2-雙環[2.2.1]庚基。 The cycloalkyl group as Q may be a monocyclic type or a polycyclic type. The carbon number of the cycloalkyl group is preferably set to 3 to 10. Examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a 1-adamantyl group, a 2-adamantyl group, a 1-norbornyl group, and 2 -norbornyl, borneol, isobornyl, 4-tetracyclo[6.2.1.1 3,6 .0 2,7 ]dodecyl, 8-tricyclo[5.2.1.0 2,6 ]decyl, 2 - Bicyclo [2.2.1] heptyl. Among them, a cyclopentyl group, a cyclohexyl group, a 2-adamantyl group, an 8-tricyclo[5.2.1.0 2,6 ]fluorenyl group, and a 2-bicyclo[2.2.1]heptyl group are preferred.

作為Q的芳基的具體例及較佳例例如與關於上述作為R111~R113的芳基所說明者相同。 Specific examples and preferred examples of the aryl group of Q are the same as those described above for the aryl group as R 111 to R 113 .

作為Q的雜環基的具體例及較佳例例如與關於上述作為R111~R113的雜環基所說明者相同。 Specific examples and preferred examples of the heterocyclic group of Q are, for example, the same as those described above for the heterocyclic group of R 111 to R 113 .

作為Q的烷基、環烷基、芳基及雜環基可具有取代基,例如可列舉烷基、環烷基、氰基、鹵素原子、羥基、烷氧基、羧基、烷氧基羰基。 The alkyl group, the cycloalkyl group, the aryl group and the heterocyclic group of Q may have a substituent, and examples thereof include an alkyl group, a cycloalkyl group, a cyano group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group.

R2較佳為烷基、經環烷基取代的烷基、環烷基、芳烷基、芳氧基烷基或雜環基,更佳為烷基或環烷基。作為R2的烷基、作為R2的「環烷基」及「經環烷基取代的烷基」中的環烷基、以及作為R2所表示的基團的「芳烷基(芳基烷基)」及「芳氧基烷基」中的芳基的具體例及較佳例分別與作為Q的烷基、環烷基及芳基中說明者相同。 R 2 is preferably an alkyl group, a cycloalkyl-substituted alkyl group, a cycloalkyl group, an aralkyl group, an aryloxyalkyl group or a heterocyclic group, more preferably an alkyl group or a cycloalkyl group. An alkyl group as R 2 , a cycloalkyl group as R 2 and a cycloalkyl group in a cycloalkyl-substituted alkyl group, and an aralkyl group as an ion group represented by R 2 Specific examples and preferred examples of the aryl group in the alkyl group" and the "aryloxyalkyl group" are the same as those described for the alkyl group, the cycloalkyl group and the aryl group which are Q.

作為R2的「經環烷基取代的烷基」、「芳烷基(芳基烷 基)」及「芳氧基烷基」中的烷基部位的具體例及較佳例分別與作為M的伸烷基中說明者相同。 Specific examples and preferred examples of the alkyl moiety in the "cycloalkyl-substituted alkyl group", the "aralkyl group" and the "aryloxyalkyl group" of R 2 are respectively referred to as M The description of the alkyl group is the same.

作為R2的雜環基的具體例及較佳例與作為Q的雜環基中說明者相同。 Specific examples and preferred examples of the heterocyclic group of R 2 are the same as those described for the heterocyclic group of Q.

R2所表示的取代基中,具體而言,例如可列舉:甲基、乙基、異丙基、環戊基、環己基、環己基乙基、2-金剛烷基、8-三環[5.2.1.02,6]癸基、2-雙環[2.2.1]庚基、苄基、2-苯乙基、2-苯氧基伸乙基等。 Specific examples of the substituent represented by R 2 include a methyl group, an ethyl group, an isopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclohexylethyl group, a 2-adamantyl group, and an 8-tricyclo[ 5.2.1.0 2,6 ] mercapto, 2-bicyclo[2.2.1]heptyl, benzyl, 2-phenylethyl, 2-phenoxyethyl and the like.

R1與R2亦可相互鍵結並與式中的氧原子一起形成環(含氧雜環)。含氧雜環結構可為單環、多環或螺環的任一種,較佳為單環的含氧雜環結構,其碳數較佳為3~10,更佳為4或5。 R 1 and R 2 may also be bonded to each other and form a ring (oxygen-containing hetero ring) together with an oxygen atom in the formula. The oxygen-containing heterocyclic ring structure may be any of a monocyclic ring, a polycyclic ring or a spiro ring, and is preferably a monocyclic oxygen-containing heterocyclic ring structure having a carbon number of preferably 3 to 10, more preferably 4 or 5.

另外,如上所述,於M為二價連結基的情形時,Q亦可為單鍵或經由其他的連結基鍵結於M而形成環。上述其他的連結基可列舉伸烷基(較佳為碳數1~3的伸烷基),所形成的環較佳為5員環或6員環。 Further, as described above, when M is a divalent linking group, Q may be a single bond or may be bonded to M via another linking group to form a ring. The other linking group may be an alkyl group (preferably an alkyl group having 1 to 3 carbon atoms), and the ring formed is preferably a 5-membered ring or a 6-membered ring.

R3較佳為氫原子或碳數1~5的烷基,更佳為氫原子或碳數1~3的烷基,進而佳為氫原子、甲基或乙基,尤佳為氫原子。 R 3 is preferably a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, more preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, further preferably a hydrogen atom, a methyl group or an ethyl group, and particularly preferably a hydrogen atom.

於本發明的一形態中,較佳為R1及R3中的一個為含有兩個以上的碳原子的基團。 In one aspect of the invention, it is preferred that one of R 1 and R 3 is a group containing two or more carbon atoms.

通式(Aa1)所表示的重複單元較佳為下述通式(Aa1-1)~通式(Aa1-4)的任一個所表示的重複單元。 The repeating unit represented by the formula (Aa1) is preferably a repeating unit represented by any one of the following formulae (Aa1-1) to (Aa1-4).

[化38] [化38]

通式(Aa1-1)中,R'1表示氫原子或甲基,較佳為甲基。 In the formula (Aa1-1), R' 1 represents a hydrogen atom or a methyl group, preferably a methyl group.

R11、R12及R13分別與上述通式(Aa1)中的R1、R2及R3為相同含意。 R 11 , R 12 and R 13 have the same meanings as R 1 , R 2 and R 3 in the above formula (Aa1), respectively.

通式(Aa1-2)中,R'2表示氫原子或甲基,較佳為甲基。 In the formula (Aa1-2), R' 2 represents a hydrogen atom or a methyl group, preferably a methyl group.

R21、R22及R23分別與上述通式(Aa1)中的R1、R2及R3為相同含意。 R 21 , R 22 and R 23 have the same meanings as R 1 , R 2 and R 3 in the above formula (Aa1), respectively.

通式(Aa1-3)中,R'3表示氫原子或甲基,較佳為甲基。 In the formula (Aa1-3), R' 3 represents a hydrogen atom or a methyl group, preferably a methyl group.

R31、R32及R33分別與上述通式(Aa1)中的R1、R2及R3為相同含意。 R 31 , R 32 and R 33 have the same meanings as R 1 , R 2 and R 3 in the above formula (Aa1), respectively.

通式(Aa1-4)中,L'表示單鍵或二價連結基。L'的二價連結基例如可列舉:伸烷 基、芳香環基、伸環烷基、-COO-L1'-、-O-L1'-、-CONH-、將這些的2個以上組合而形成的基團等。此處,L1'表示伸烷基(較佳為碳數1~20)、伸環烷基(較佳為碳數3~20)、芳香環基、將伸烷基與芳香環基組合而成的基團。L'較佳為單鍵。 In the formula (Aa1-4), L' represents a single bond or a divalent linking group. Examples of the divalent linking group of L' include an alkylene group, an aromatic ring group, a cycloalkyl group, -COO-L 1 '-, -OL 1 '-, and -CONH-, and two or more of these are combined. Formation of groups, etc. Here, L 1 ' represents an alkylene group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms), an aromatic ring group, and an alkyl group and an aromatic ring group. a group. L' is preferably a single bond.

R41、R42及R43分別與上述通式(Aa1)中的R1、R2及R3為相同含意。 R 41 , R 42 and R 43 have the same meanings as R 1 , R 2 and R 3 in the above formula (Aa1), respectively.

於本發明的一態樣中,通式(Aa1)所表示的重複單元較佳為通式(Aa1-1)~通式(Aa1-4)的任一個所表示的重複單元,更佳為通式(Aa1-1)~通式(Aa1-3)的任一個所表示的重複單元,進而佳為通式(Aa1-1)或通式(Aa1-3)所表示的重複單元,尤佳為通式(Aa1-1)所表示的重複單元。 In one aspect of the present invention, the repeating unit represented by the formula (Aa1) is preferably a repeating unit represented by any one of the formula (Aa1-1) to the formula (Aa1-4), more preferably a pass. The repeating unit represented by any one of the formula (Aa1-1) to the formula (Aa1-3) is preferably a repeating unit represented by the formula (Aa1-1) or the formula (Aa1-3), and particularly preferably A repeating unit represented by the formula (Aa1-1).

通式(Aa1)所表示的重複單元亦較佳為下述(Aa1-a)~(Aa1-f)的任一個所表示的重複單元。 The repeating unit represented by the formula (Aa1) is also preferably a repeating unit represented by any one of the following (Aa1-a) to (Aa1-f).

通式(Aa1-a)中, Ra'、La、R2a及R1a分別與通式(Aa1)中的R'、L、R2及R1相同,另外較佳範圍亦相同。 In the general formula (Aa1-a), R a ', L a , R 2a and R 1a are the same as R', L, R 2 and R 1 in the formula (Aa1), respectively, and the preferred ranges are also the same.

通式(Aa1-b)中,Rb'、Lb、R2b及R3b分別與通式(Aa1)中的R'、L、R2及R3相同,另外較佳範圍亦相同。 In the general formula (Aa1-b), R b ', L b , R 2b and R 3b are the same as R', L, R 2 and R 3 in the formula (Aa1), respectively, and the preferred ranges are also the same.

通式(Aa1-c)中, Rc'、Lc、R2c及R3c分別與通式(Aa1)中的R'、L、R2及R3相同,另外較佳範圍亦相同。 In the general formula (Aa1-c), R c ', L c , R 2c and R 3c are the same as R', L, R 2 and R 3 in the formula (Aa1), respectively, and the preferred ranges are also the same.

R1a'與通式(Aa1)中的R111相同,另外較佳範圍亦相同。 R 1a ' is the same as R 111 in the formula (Aa1), and the preferred range is also the same.

通式(Aa1-d)中,Rd'、Ld、R2d及R3d分別與通式(Aa1)中的R'、L、R2及R3相同,另外較佳範圍亦相同。 In the general formula (Aa1-d), R d ', L d , R 2d and R 3d are the same as R', L, R 2 and R 3 in the formula (Aa1), respectively, and the preferred ranges are also the same.

R2a'及R2b'分別與通式(Aa1)中的R111及R112相同,另外較佳範圍亦相同。 R 2a ' and R 2b ' are the same as R 111 and R 112 in the formula (Aa1), respectively, and the preferred ranges are also the same.

[化46] [Chem. 46]

通式(Aa1-e)中,Re'、Le、R2e及R3e分別與通式(Aa1)中的R'、L、R2及R3相同,另外較佳範圍亦相同。 In the general formula (Aa1-e), R e ', L e , R 2e and R 3e are the same as R', L, R 2 and R 3 in the formula (Aa1), respectively, and the preferred ranges are also the same.

R3a'、R3b'及R3c'分別與通式(Aa1)中的R111、R112及R113相同,另外較佳範圍亦相同。 R 3a ', R 3b ' and R 3c ' are the same as R 111 , R 112 and R 113 in the formula (Aa1), respectively, and the preferred ranges are also the same.

通式(Aa1-f)中,Rf'及Lf與通式(Aa1)中的R'及L相同,另外較佳範圍亦相同。 In the general formula (Aa1-f), R f ' and L f are the same as R' and L in the formula (Aa1), and the preferred ranges are also the same.

R3f與通式(Aa1)中的R3相同,另外較佳範圍亦相同。 R 3f is the same as R 3 in the formula (Aa1), and the preferred range is also the same.

R4f表示與式中的碳原子及氧原子一起形成含氧雜環所必需的原子團。R4f與碳原子及氧原子一起形成的含氧雜環結構較佳為單環的含氧雜環結構,含氧雜環的碳數較佳為3~10,更佳為4或5。 R 4f represents an atomic group necessary for forming an oxygen-containing hetero ring together with a carbon atom and an oxygen atom in the formula. The oxygen-containing heterocyclic ring structure formed by R 4f together with a carbon atom and an oxygen atom is preferably a monocyclic oxygen-containing heterocyclic ring structure, and the number of carbon atoms of the oxygen-containing hetero ring is preferably from 3 to 10, more preferably 4 or 5.

於本發明的一態樣中,通式(Aa1)所表示的重複單元更佳為通式(Aa1-c)~通式(Aa1-f)中的任一個所表示的重複單元,進而佳為通式(Aa1-e)或通式(Aa1-f)所表示的重複單元。 In one aspect of the present invention, the repeating unit represented by the formula (Aa1) is more preferably a repeating unit represented by any one of the formula (Aa1-c) to the formula (Aa1-f), and further preferably A repeating unit represented by the formula (Aa1-e) or the formula (Aa1-f).

以下示出上述通式(Aa1)中的各部分結構及各基團的較佳具體例。 Preferred specific examples of the structure of each moiety and each group in the above formula (Aa1) are shown below.

上述通式(Aa1)中的下述通式(Aa1')所表示的部分結構的較佳具體例如下。通式(Aa1')及具體例中,*表示連結於上述通式(Aa1)中的R1及R3所鍵結的碳原子上的結合鍵,R'及L分別表示通式(Aa1)中的R'及L。 A preferred embodiment of the partial structure represented by the following formula (Aa1') in the above formula (Aa1) is as follows. In the general formula (Aa'') and specific examples, * represents a bond to a carbon atom bonded to R 1 and R 3 in the above formula (Aa1), and R' and L represent a formula (Aa1), respectively. R' and L.

[化49] [化49]

上述通式(Aa1)中的R1的一價取代基的具體例可列舉以下者。*表示連結於通式(Aa1)中的碳原子的結合鍵。 Specific examples of the monovalent substituent of R 1 in the above formula (Aa1) include the following. * represents a bond bonding to a carbon atom in the formula (Aa1).

[化50] [化50]

示出上述通式(Aa1)中的R2的具體例。以下具體例中,*表示鍵結於通式(Aa1)中的氧原子的結合鍵。 Specific examples of R 2 in the above formula (Aa1) are shown. In the following specific examples, * represents a bond bond of an oxygen atom bonded to the formula (Aa1).

將上述通式(Aa1)所表示的重複單元為上述通式(Aa1-f)所表示的重複單元的情形時,R4f與式中的碳原子及氧原子一起形成的含氧雜環的具體例示於以下。*表示連結於通式(Aa1-f)中的氧原子的結合鍵。R3f與通式(Aa1-f)中的R3f相同。 When the repeating unit represented by the above formula (Aa1) is a repeating unit represented by the above formula (Aa1-f), the specificity of the oxygen-containing hetero ring formed by R 4f together with the carbon atom and the oxygen atom in the formula The examples are as follows. * represents a bond bonding to an oxygen atom in the formula (Aa1-f). R 3f general formula (Aa1-f) R 3f are the same.

以下示出上述通式(Aa1)所表示的重複單元的具體例,但本發明不限定於該些具體例。 Specific examples of the repeating unit represented by the above formula (Aa1) are shown below, but the present invention is not limited to these specific examples.

[化53] [化53]

[化54] [54]

相對於上述樹脂(Aa)中的所有重複單元,樹脂(Aa)中的上述通式(Aa1)所表示的重複單元的含有率(含有多種的情形時為其合計量)較佳為5mol%~80mol%,更佳為5mol%~60mol%,進而佳為10mol%~40mol%。 With respect to all the repeating units in the above-mentioned resin (Aa), the content of the repeating unit represented by the above formula (Aa1) in the resin (Aa) (the total amount in the case of containing a plurality of kinds) is preferably 5 mol%. 80 mol%, more preferably 5 mol% to 60 mol%, and further preferably 10 mol% to 40 mol%.

<重複單元(Aa2)> <Repeating unit (Aa2)>

繼而,對通式(Aa2)所表示的重複單元加以詳細說明。 Next, the repeating unit represented by the formula (Aa2) will be described in detail.

於通式(Aa2)中,作為R1、R2、R11~R13的烷基較佳為碳數1~10的烷基,例如可列舉:甲基、乙基、丙基、異丙基、 正丁基、第二丁基、第三丁基、新戊基、己基、2-乙基己基、辛基及十二烷基等。 In the formula (Aa2), the alkyl group as R 1 , R 2 and R 11 to R 13 is preferably an alkyl group having 1 to 10 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group and an isopropyl group. Base, n-butyl, t-butyl, tert-butyl, neopentyl, hexyl, 2-ethylhexyl, octyl and dodecyl groups, and the like.

就更可靠地達成本發明的效果的觀點而言,關於R1及R2的烷基更佳為碳數2~10的烷基,進而佳為R1及R2均為乙基。 From the viewpoint of more reliably achieving the effects of the present invention, the alkyl group of R 1 and R 2 is more preferably an alkyl group having 2 to 10 carbon atoms, and further preferably both R 1 and R 2 are an ethyl group.

關於R11及R12的烷基更佳為碳數1~4的烷基,進而佳為甲基或乙基,尤佳為甲基。 The alkyl group of R 11 and R 12 is more preferably an alkyl group having 1 to 4 carbon atoms, further preferably a methyl group or an ethyl group, and particularly preferably a methyl group.

R13更佳為氫原子或甲基。 R 13 is more preferably a hydrogen atom or a methyl group.

如上所述,R11及R12亦可相互連結而形成環,R11及R13亦可相互連結而形成環。所形成的環例如較佳為單環或多環的脂環式烴基,尤佳為R11及R12相互鍵結而形成單環或多環的脂環式烴基。 As described above, R 11 and R 12 may be bonded to each other to form a ring, and R 11 and R 13 may be bonded to each other to form a ring. The ring formed is, for example, preferably a monocyclic or polycyclic alicyclic hydrocarbon group, and it is particularly preferred that R 11 and R 12 are bonded to each other to form a monocyclic or polycyclic alicyclic hydrocarbon group.

R11及R12連結而形成的環較佳為3員環~8員環,更佳為5員環或6員環。 The ring formed by joining R 11 and R 12 is preferably a 3-membered ring to an 8-membered ring, more preferably a 5-membered ring or a 6-membered ring.

R11及R13連結而形成的環較佳為3員環~8員環,更佳為5員環或6員環。 The ring formed by joining R 11 and R 13 is preferably a 3-membered ring to an 8-membered ring, more preferably a 5-membered ring or a 6-membered ring.

R11及R12、或R11及R13連結而形成的環更佳為下文中作為通式(Aa2-1)的X所述的脂環式基。 The ring formed by linking R 11 and R 12 or R 11 and R 13 is more preferably an alicyclic group described below as X of the formula (Aa2-1).

作為R1、R2及R11~R13的烷基可更具有取代基。此種取代基例如可列舉:環烷基、芳基、胺基、羥基、羧基、鹵素原子、烷氧基、芳烷氧基、硫醚基、醯基、醯氧基、烷氧基羰基、氰基及硝基等。 The alkyl group as R 1 , R 2 and R 11 to R 13 may have a more substituent. Examples of such a substituent include a cycloalkyl group, an aryl group, an amine group, a hydroxyl group, a carboxyl group, a halogen atom, an alkoxy group, an aralkyloxy group, a thioether group, a decyl group, a decyloxy group, an alkoxycarbonyl group, and the like. Cyano and nitro groups.

於本發明的一形態中,較佳為R1及R2的至少一個的烷 基所具有的碳數2以上。 In one aspect of the invention, it is preferred that at least one of the alkyl groups of R 1 and R 2 has a carbon number of 2 or more.

另外,R11及R12連結而形成的環以及R11及R13連結而形成的環可更具有取代基,此種取代基可列舉:烷基(甲基、乙基、丙基、丁基、全氟烷基(例如三氟甲基)等),及上文中作為R1、R2及R11~R13的烷基可更具有的取代基的具體例所述的各基團。 Further, a ring formed by linking R 11 and R 12 and a ring formed by linking R 11 and R 13 may have a substituent. Examples of such a substituent include an alkyl group (methyl group, ethyl group, propyl group, butyl group). And a perfluoroalkyl group (for example, a trifluoromethyl group) or the like, and each group described above as a specific example of a substituent which the alkyl group of R 1 , R 2 and R 11 to R 13 may have.

上述取代基彼此亦可相互鍵結而形成環,上述取代基彼此相互鍵結而形成環時的環可列舉碳數3~10的環烷基或苯基。 The substituents may be bonded to each other to form a ring, and the ring in which the substituents are bonded to each other to form a ring may, for example, be a cycloalkyl group having 3 to 10 carbon atoms or a phenyl group.

如上所述,Ra表示氫原子、烷基、氰基或鹵素原子。 As described above, Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom.

關於Ra的烷基較佳為碳數1~4的烷基,可具有取代基。 The alkyl group of Ra is preferably an alkyl group having 1 to 4 carbon atoms and may have a substituent.

Ra的烷基可具有的較佳取代基例如可列舉羥基、鹵素原子。 Preferred substituents which the alkyl group of Ra may have include a hydroxyl group and a halogen atom.

Ra的鹵素原子可列舉:氟原子、氯原子、溴原子、碘原子。 Examples of the halogen atom of Ra include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

Ra較佳為以氫原子、甲基、羥基甲基、碳數1~4的全氟烷基(例如三氟甲基)為宜,就提高樹脂(A)的玻璃轉移點(Tg),提高解析力、間隙寬度粗糙度(space width roughness)的觀點而言,尤佳為甲基。 Ra is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a perfluoroalkyl group having a carbon number of 1 to 4 (for example, a trifluoromethyl group), thereby increasing the glass transition point (Tg) of the resin (A) and improving From the viewpoint of the resolution force and the space width roughness, a methyl group is particularly preferable.

其中,於以下將說明的L1為伸苯基的情形時,Ra亦較佳為氫原子。 In the case where L 1 is a phenyl group as described below, Ra is also preferably a hydrogen atom.

如上所述,L1表示單鍵或二價連結基。 As described above, L 1 represents a single bond or a divalent linking group.

L1所表示的二價連結基可列舉:伸烷基、二價芳香環基、-COO-L11-、-O-L11-、將這些的2個以上組合而形成的基團等。此 處,L11表示伸烷基、伸環烷基、二價芳香環基、將伸烷基與二價芳香環基組合而成的基團。 Examples of the divalent linking group represented by L 1 include an alkylene group, a divalent aromatic ring group, -COO-L 11 -, -OL 11 -, a group formed by combining two or more of these, and the like. Here, L 11 represents an alkyl group, a cycloalkyl group, a divalent aromatic ring group, a group in which an alkyl group and a divalent aromatic ring group are combined.

關於L1及L11的伸烷基可列舉:亞甲基、伸乙基、伸丙基、伸丁基、伸己基、伸辛基等碳數1~8的伸烷基。更佳為碳數1~4的伸烷基,尤佳為碳數1或2的伸烷基。 The alkylene group of L 1 and L 11 may, for example, be an alkylene group having a carbon number of 1 to 8 such as a methylene group, an ethyl group, a propyl group, a butyl group, a hexyl group or a octyl group. More preferably, it is an alkylene group having 1 to 4 carbon atoms, and particularly preferably an alkylene group having 1 or 2 carbon atoms.

關於L11的伸環烷基較佳為碳數3~20的伸環烷基,例如可列舉:伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環庚基、伸環辛基、伸降冰片基或伸金剛烷基。 The cycloalkyl group of L 11 is preferably a cycloalkyl group having 3 to 20 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutene butyl group, a cyclopentylene group, a cyclohexylene group, and a cycloheptyl group. Extend the octyl group, extend the borneol base or extend the adamantyl group.

關於L11的伸環烷基中,構成環的碳(有助於形成環的碳)可為羰基碳,亦可為氧原子等雜原子,亦可含有酯鍵而形成內酯環。 In the cycloalkyl group of L 11 , the carbon constituting the ring (carbon which contributes to the ring) may be a carbonyl carbon, a hetero atom such as an oxygen atom, or an ester bond to form a lactone ring.

關於L1及L11的二價芳香環基較佳為1,4-伸苯基、1,3-伸苯基、1,2-伸苯基等伸苯基、1,4-伸萘基,更佳為1,4-伸苯基。 The divalent aromatic ring group of L 1 and L 11 is preferably a phenyl group, a 1,3-phenylene group, a 1,2-phenylene group, or the like, a 1,4-phenylene group. More preferably, it is a 1,4-phenylene group.

L1較佳為單鍵、二價芳香環基、具有伸降冰片基的二價基或具有伸金剛烷基的二價基,尤佳為單鍵。 L 1 is preferably a single bond, a divalent aromatic ring group, a divalent group having a borneol group or a divalent group having an adamantyl group, and particularly preferably a single bond.

以下例示作為關於L1的二價連結基的較佳具體例,但本發明不限定於該些具體例。 Preferred examples of the divalent linking group for L 1 are exemplified below, but the present invention is not limited to these specific examples.

於本發明的一形態中,上述通式(Aa2)所表示的重複單元較佳為下述通式(Aa2-1)所表示的重複單元。 In one embodiment of the present invention, the repeating unit represented by the above formula (Aa2) is preferably a repeating unit represented by the following formula (Aa2-1).

上述通式(Aa2-1)中,X表示脂環式基。 In the above formula (Aa2-1), X represents an alicyclic group.

R1、R2、Ra及L1分別與通式(Aa2)中的R1、R2、Ra及L1為相同含意,具體例、較佳例亦與通式(Aa2)中的R1、R2、Ra及L1相同。 R 1, R 2, Ra, respectively, and L 1 in the general formula (Aa2) R in 1, R 2, Ra L 1 is the same meaning and specific examples, the preferred embodiment also of the general formula (Aa2) R 1 is R 2 , Ra and L 1 are the same.

作為X的脂環式基亦可為單環、多環、橋聯式,較佳為表示碳數3~25的脂環式基。 The alicyclic group which is X may be a monocyclic, polycyclic or bridged type, and preferably represents an alicyclic group having a carbon number of 3 to 25.

另外,脂環式基可具有取代基,取代基例如可列舉與上文中作為R11及R12連結而形成的環可具有的取代基所述的取代基相同的基團。 Further, the alicyclic group may have a substituent, and examples of the substituent include the same substituents as those described above for the substituent which the ring formed by linking R 11 and R 12 may have.

X較佳為表示碳數3~25的脂環式基,更佳為表示碳數5~20的脂環式基,尤佳為碳數5~15的環烷基。 X is preferably an alicyclic group having 3 to 25 carbon atoms, more preferably an alicyclic group having 5 to 20 carbon atoms, and particularly preferably a cycloalkyl group having 5 to 15 carbon atoms.

另外,X較佳為3員環~8員環的脂環式基或其縮合環基,更 佳為5員環或6員環或其縮合環基。 Further, X is preferably an alicyclic group of a 3-membered ring to an 8-membered ring or a condensed ring group thereof, Preferably, it is a 5-membered ring or a 6-membered ring or a fused ring thereof.

以下示出作為X的脂環基的結構例。 An example of the structure of the alicyclic group as X is shown below.

[化59] [化59]

上述脂環式基的較佳者可列舉:金剛烷基、降金剛烷基、十氫萘殘基、三環癸基、四環十二烷基、降冰片基、雪松醇基、環戊基、環己基、環庚基、環辛基、環癸基、環十二烷基。更佳為環己基、環戊基、金剛烷基、降冰片基,進而佳為環己基、環戊基,尤佳為環己基。 Preferred examples of the above alicyclic group include adamantyl group, noradamantyl group, decahydronaphthalene residue, tricyclodecyl group, tetracyclododecyl group, norbornyl group, cedarol group, cyclopentyl group. , cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl. More preferably, it is a cyclohexyl group, a cyclopentyl group, an adamantyl group, a norbornyl group, and further preferably a cyclohexyl group, a cyclopentyl group, and more preferably a cyclohexyl group.

以下示出上述通式(Aa2)或通式(Aa2-1)所表示的重 複單元的具體例,但本發明不限定於該些具體例。 The weight represented by the above formula (Aa2) or formula (Aa2-1) is shown below. Specific examples of the complex unit, but the present invention is not limited to the specific examples.

[化66] [化66]

相對於樹脂(Aa)中的所有重複單元,樹脂(Aa)中的上述通式(Aa2)所表示的重複單元的含有率(含有多種的情形時為其合計量)較佳為5mol%~80mol%,更佳為5mol%~60mol%,進而佳為10mol%~40mol%。 With respect to all the repeating units in the resin (Aa), the content of the repeating unit represented by the above formula (Aa2) in the resin (Aa) (in the case where it is contained in a plurality of cases) is preferably from 5 mol% to 80 mol. % is more preferably 5 mol% to 60 mol%, and further preferably 10 mol% to 40 mol%.

<重複單元(Aa5)> <Repeating unit (Aa5)>

於本發明的一形態中,樹脂(Aa)亦可更含有來源於下述通式(aa1-1)所表示的單體的至少一種重複單元(Aa5)。 In one aspect of the invention, the resin (Aa) may further contain at least one repeating unit (Aa5) derived from a monomer represented by the following formula (aa1-1).

通式(aa1-1)中,Q1表示含有聚合性基的有機基。 In the formula (aa1-1), Q 1 represents an organic group containing a polymerizable group.

L1及L2分別獨立地表示單鍵或二價連結基。 L 1 and L 2 each independently represent a single bond or a divalent linking group.

Rf表示含氟原子的有機基。 Rf represents an organic group of a fluorine atom.

式中的由Q1所表示的含有聚合性基的有機基只要為含有聚合性基的基團,則並無特別限定。聚合性基例如可列舉:丙烯酸基、甲基丙烯酸基、苯乙烯基、降冰片烯基、馬來醯亞胺基、乙烯醚基等,尤佳為丙烯酸基、甲基丙烯酸基及苯乙烯基。 The organic group containing a polymerizable group represented by Q 1 in the formula is not particularly limited as long as it is a group containing a polymerizable group. Examples of the polymerizable group include an acrylic group, a methacryl group, a styryl group, a norbornene group, a maleidino group, a vinyl ether group, etc., and particularly preferably an acrylic group, a methacryl group, and a styryl group. .

由L1及L2所表示的二價連結基例如可列舉:經取代或未經取代的伸芳基、經取代或未經取代的伸烷基、經取代或未經取代的伸環烷基、-O-、-CO-、或將這些多個組合而成的二價連結基。 The divalent linking group represented by L 1 and L 2 may, for example, be a substituted or unsubstituted extended aryl group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted stretched alkyl group. , -O-, -CO-, or a divalent linking group in which these multiple components are combined.

伸芳基例如較佳為碳數6個~14個的基團,具體例可列舉:伸苯基、伸萘基、伸蒽基、伸菲基、伸聯苯基、伸三聯苯基等。 The aryl group is preferably a group having 6 to 14 carbon atoms, and specific examples thereof include a stretching phenyl group, a stretching naphthyl group, a stretching fluorenyl group, a phenanthrenyl group, a stretching phenyl group, and a stretching terphenyl group.

伸烷基及伸環烷基例如較佳為碳數1~15的基團,具體例可列舉自以下將列舉的直鏈狀、分支狀或環狀的烷基中去掉一個氫原子的形式的基團:甲基、乙基、正丙基、異丙基、正丁基、第二丁基、第三丁基、第三戊基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、環戊基、環己基、環戊基甲基、環戊基乙基、環戊基丁基、環己基甲基、環己基乙基、環己基丁基、金剛烷基。 The alkylene group and the cycloalkylene group are preferably a group having 1 to 15 carbon atoms, and specific examples thereof include a form in which a hydrogen atom is removed from a linear, branched or cyclic alkyl group to be enumerated below. Group: methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, tert-butyl, third pentyl, n-pentyl, n-hexyl, n-heptyl, n-octyl , n-decyl, n-decyl, cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, diamond alkyl.

上述伸芳基、伸烷基及伸環烷基可具有的取代基例如可列舉:烷基、芳烷基、烷氧基、氟原子等。 Examples of the substituent which the above-mentioned extended aryl group, alkylene group and cycloalkylene group may have include an alkyl group, an aralkyl group, an alkoxy group, a fluorine atom and the like.

於本發明的一態樣中,L1更佳為單鍵、伸苯基、醚基、羰基、羰氧基,L2更佳為伸烷基、醚基、羰基、羰氧基。 In one aspect of the invention, L 1 is more preferably a single bond, a phenyl group, an ether group, a carbonyl group or a carbonyloxy group, and L 2 is more preferably an alkyl group, an ether group, a carbonyl group or a carbonyloxy group.

作為Rf的含氟原子的有機基中的有機基為含有至少一個碳原子的基團,較佳為含有碳-氫鍵部分的有機基。Rf例如為經氟原子取代的烷基或經氟原子取代的環烷基。 The organic group in the organic group of the fluorine atom-containing atom of Rf is a group containing at least one carbon atom, and preferably an organic group containing a carbon-hydrogen bond moiety. Rf is, for example, an alkyl group substituted by a fluorine atom or a cycloalkyl group substituted by a fluorine atom.

重複單元(Aa5)於一態樣中,較佳為下述通式(aa1-2-1)或通式(aa1-3-1)所表示的重複單元。 The repeating unit (Aa5) is preferably a repeating unit represented by the following formula (aa1-2-1) or formula (aa1-3-1) in one aspect.

通式(aa1-2-1)及通式(aa1-3-1)中,Ra1及Ra2分別獨立地表示氫原子或烷基。Ra1及Ra2較佳為氫原子或甲基。 In the formula (aa1-2-1) and the formula (aa1-3-1), Ra 1 and Ra 2 each independently represent a hydrogen atom or an alkyl group. Ra 1 and Ra 2 are preferably a hydrogen atom or a methyl group.

L21及L22分別獨立地表示單鍵或二價連結基,與上文中說明的通式(aa1-1)中的L2為相同含意。 L 21 and L 22 each independently represent a single bond or a divalent linking group, and have the same meaning as L 2 in the above formula (aa1-1).

Rf1及Rf2分別獨立地表示含氟原子的有機基,與通式(aa1-1)中的Rf為相同含意。 Rf 1 and Rf 2 each independently represent an organic group of a fluorine atom, and have the same meaning as Rf in the formula (aa1-1).

另外,重複單元(Aa5)於一態樣中,較佳為下述通式 (aa1-2-2)或通式(aa1-3-2)所表示的重複單元。 Further, the repeating unit (Aa5) is preferably in the following form (aa1-2-2) or a repeating unit represented by the formula (aa1-3-2).

通式(aa1-2-2)及通式(aa1-3-2)中,Ra1及Ra2分別獨立地表示氫原子或烷基。 In the general formula (aa1-2-2) and the general formula (aa1-3-2), Ra 1 and Ra 2 each independently represent a hydrogen atom or an alkyl group.

R1、R2、R3及R4分別獨立地表示氫原子或烷基。 R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom or an alkyl group.

m1及m2分別獨立地表示0~5的整數。 m 1 and m 2 each independently represent an integer of 0 to 5.

Rf1及Rf2分別獨立地表示含氟原子的有機基。 Rf 1 and Rf 2 each independently represent an organic group of a fluorine atom.

Ra1及Ra2較佳為氫原子或甲基。 Ra 1 and Ra 2 are preferably a hydrogen atom or a methyl group.

由R1、R2、R3及R4所表示的烷基例如較佳為碳數1~10的直鏈或分支鏈的烷基,具體例可列舉:甲基、乙基、丙基、異丙基、丁基、第三丁基等。該烷基可具有取代基,取代基例如可列舉烷氧基、芳基、鹵素原子等。 The alkyl group represented by R 1 , R 2 , R 3 and R 4 is, for example, preferably a linear or branched alkyl group having 1 to 10 carbon atoms, and specific examples thereof include a methyl group, an ethyl group and a propyl group. Isopropyl, butyl, tert-butyl, and the like. The alkyl group may have a substituent, and examples of the substituent include an alkoxy group, an aryl group, a halogen atom and the like.

m1及m2較佳為0~3的整數,更佳為0或1,最佳為1。 m 1 and m 2 are preferably an integer of 0 to 3, more preferably 0 or 1, most preferably 1.

作為Rf1及Rf2的含氟原子的有機基與通式(aa1-1)中的Rf 為相同含意。 The organic group having a fluorine atom of Rf 1 and Rf 2 has the same meaning as Rf in the formula (aa1-1).

另外,重複單元(Aa5)於一態樣中,較佳為下述通式(aa1-2-3)或通式(aa1-3-3)所表示的重複單元。 Further, in one aspect, the repeating unit (Aa5) is preferably a repeating unit represented by the following formula (aa1-2-3) or formula (aa1-3-3).

通式(aa1-2-3)及通式(aa1-3-3)中,Ra1表示氫原子或甲基。 In the formula (aa1-2-3) and the formula (aa1-3-3), Ra 1 represents a hydrogen atom or a methyl group.

Rf1及Rf2分別獨立地表示含氟原子的有機基,與通式(aa1-1)中的Rf為相同含意。 Rf 1 and Rf 2 each independently represent an organic group of a fluorine atom, and have the same meaning as Rf in the formula (aa1-1).

以下示出重複單元(Aa5)的具體例,但本發明不限定於此。 Specific examples of the repeating unit (Aa5) are shown below, but the present invention is not limited thereto.

[化71] [71]

[化72] [化72]

[化73] [化73]

[化74] [化74]

[化75] [化75]

[化76] [化76]

於樹脂(Aa)含有重複單元(Aa5)的情形時,相對於 樹脂(Aa)中的所有重複單元,重複單元(Aa5)的含有率較佳為10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 When the resin (Aa) contains a repeating unit (Aa5), The content of the repeating unit (Aa5) in all the repeating units (Aa5) in the resin (Aa) is preferably from 10 mol% to 90 mol%, more preferably from 30 mol% to 85 mol%, still more preferably from 50 mol% to 80 mol%.

<重複單元(Aa6)> <Repeating unit (Aa6)>

於本發明的一形態中,樹脂(Aa)亦可更含有與下述通式(ca-1)或通式(cb-1)所表示的聚合性化合物相對應的重複單元。 In one aspect of the invention, the resin (Aa) may further contain a repeating unit corresponding to the polymerizable compound represented by the following formula (ca-1) or formula (cb-1).

於通式(ca-1)及通式(cb-1)中,A表示可具有取代基的甲基丙烯酸基、可具有取代基的丙烯酸基或可具有取代基的降冰片烯基。 In the general formula (ca-1) and the general formula (cb-1), A represents a methacrylic group which may have a substituent, an acrylic group which may have a substituent or a norbornenyl group which may have a substituent.

Z1分別獨立地表示單鍵、醚鍵(-O-)、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵。於q為2以上的情形時,Z1所表示的多個基團可相同亦可不同。 Z 1 each independently represents a single bond, an ether bond (-O-), an ester bond, a guanamine bond, a urethane bond or a urea bond. When q is 2 or more, a plurality of groups represented by Z 1 may be the same or different.

Z2分別獨立地表示單鍵或可具有取代基的鏈狀或環狀伸烷基。於q為2以上的情形時,Z2所表示的多個基團可相同亦可不同。 Z 2 each independently represents a single bond or a chain or cyclic alkyl group which may have a substituent. When q is 2 or more, a plurality of groups represented by Z 2 may be the same or different.

Ta及Tb分別獨立地表示鹵素原子、可具有取代基的烷 基、可具有取代基的環烷基、可具有取代基的烷氧基、可具有取代基的醯基、可具有取代基的烷氧基羰基、羧基、腈基、羥基、可具有取代基的醯胺基或可具有取代基的芳基。 Ta and Tb each independently represent a halogen atom and an alkyl group which may have a substituent a cycloalkyl group which may have a substituent, an alkoxy group which may have a substituent, a mercapto group which may have a substituent, an alkoxycarbonyl group which may have a substituent, a carboxyl group, a nitrile group, a hydroxyl group, may have a substituent Amidino group or an aryl group which may have a substituent.

於Ta存在多個的情形時,Ta彼此亦可鍵結而形成環。 When there are a plurality of Tas, Ta may be bonded to each other to form a ring.

於Tb存在多個的情形時,Tb彼此亦可鍵結而與取代有Tb的苯環一起形成可含有雜原子的縮合環。 In the case where there are a plurality of Tbs, Tb may be bonded to each other to form a condensed ring which may contain a hetero atom together with the benzene ring substituted with Tb.

Tc表示氫原子、鹵素原子、可具有取代基的烷基、可具有取代基的環烷基、腈基、羥基、可具有取代基的醯胺基或可具有取代基的芳基。 Tc represents a hydrogen atom, a halogen atom, an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, a nitrile group, a hydroxyl group, a mercapto group which may have a substituent, or an aryl group which may have a substituent.

L表示羰基、羰氧基或醚鍵(-O-)。於r為2以上的整數的情形時,(L)r表示由r個L組合而成的基團,多個L可相同亦可不同。 L represents a carbonyl group, a carbonyloxy group or an ether bond (-O-). When r is an integer of 2 or more, (L)r represents a group in which r pieces are combined, and a plurality of L's may be the same or different.

m表示1~28的整數。 m represents an integer from 1 to 28.

n表示0~11的整數。 n represents an integer from 0 to 11.

p表示0~5的整數。 p represents an integer from 0 to 5.

q表示0~5的整數。 q represents an integer from 0 to 5.

r表示0~5的整數。 r represents an integer from 0 to 5.

關於通式(ca-1)及通式(cb-1)所表示的聚合性化合物的較佳形態、製造方法及具體例,可參照日本專利特開2010-159413號公報的段落[0026]~段落[0053]的記載。 For a preferred embodiment, a production method, and a specific example of the polymerizable compound represented by the formula (ca-1) and the formula (cb-1), refer to paragraph [0026] of JP-A-2010-159413. The description of paragraph [0053].

於樹脂(Aa)含有重複單元(Aa6)的情形時,相對於樹脂(Aa)中的所有重複單元,重複單元(Aa6)的含有率較佳為 10mol%~90mol%,更佳為30mol%~85mol%,進而佳為50mol%~80mol%。 In the case where the resin (Aa) contains a repeating unit (Aa6), the content of the repeating unit (Aa6) is preferably relative to all repeating units in the resin (Aa). 10 mol% to 90 mol%, more preferably 30 mol% to 85 mol%, and further preferably 50 mol% to 80 mol%.

樹脂(Aa)於一形態中,亦可更具有選自下述(x)~(z)的組群中的基團的至少一個。 In one form, the resin (Aa) may further have at least one selected from the group consisting of the following groups (x) to (z).

(x)鹼可溶性基、 (y)因鹼性顯影液的作用而分解並於鹼性顯影液中的溶解度增大的基團、 (z)藉由酸的作用而分解的基團。 (x) an alkali soluble group, (y) a group which is decomposed by the action of an alkaline developing solution and has an increased solubility in an alkaline developing solution, (z) a group which is decomposed by the action of an acid.

關於(x)~(z)的基團,可參照日本專利特開2011-118318號公報的段落[0323]~段落[0358]的記載。 For the group of (x) to (z), the description of paragraphs [0323] to [0358] of JP-A-2011-118318 can be referred to.

於樹脂(Aa)含有氟原子的情形時,相對於樹脂(Aa)的分子量,氟原子的含有率較佳為5質量%~80質量%,更佳為10質量%~80質量%。另外,相對於樹脂(Aa)中的所有重複單元,含有氟原子的重複單元較佳為10質量%~100質量%,更佳為30質量%~100質量%。 When the resin (Aa) contains a fluorine atom, the content of the fluorine atom is preferably from 5% by mass to 80% by mass, and more preferably from 10% by mass to 80% by mass based on the molecular weight of the resin (Aa). Further, the repeating unit containing a fluorine atom is preferably 10% by mass to 100% by mass, and more preferably 30% by mass to 100% by mass based on all the repeating units in the resin (Aa).

於樹脂(Aa)含有矽原子的情形時,相對於樹脂(Aa)的分子量,矽原子的含有率較佳為2質量%~50質量%,更佳為2質量%~30質量%。另外,相對於樹脂(Aa)的所有重複單元,含有矽原子的重複單元較佳為10質量%~90質量%,更佳為20質量%~80質量%。 When the resin (Aa) contains a ruthenium atom, the content of the ruthenium atom is preferably from 2% by mass to 50% by mass, and more preferably from 2% by mass to 30% by mass based on the molecular weight of the resin (Aa). Further, the repeating unit containing a halogen atom is preferably 10% by mass to 90% by mass, and more preferably 20% by mass to 80% by mass based on all the repeating units of the resin (Aa).

樹脂(Aa)的標準聚苯乙烯換算的重量平均分子量較佳為1,000~100,000,更佳為1,000~50,000,進而更佳為2,000~ 20,000。 The standard polystyrene-equivalent weight average molecular weight of the resin (Aa) is preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, and still more preferably from 2,000 to 2,000. 20,000.

於樹脂(Aa)含有具有氟原子及矽原子的至少任一個的重複單元的情形時,樹脂(Aa)偏向存在於感光化射線性或感放射線性樹脂膜表層,於液浸介質為水的情形時,可提高製成感光化射線性或感放射線性樹脂膜時的對水的抗蝕劑膜表面的後退接觸角,提高液浸水追隨性。 When the resin (Aa) contains a repeating unit having at least one of a fluorine atom and a ruthenium atom, the resin (Aa) is biased in the surface layer of the sensitizing ray-sensitive or radiation-sensitive resin film, and the liquid immersion medium is water. In this case, the receding contact angle of the surface of the resist film against water when the photosensitive ray-sensitive or radiation-sensitive resin film is formed can be improved, and the liquid immersion followability can be improved.

感光化射線性或感放射線性樹脂膜的後退接觸角於曝光時的溫度、通常為室溫23℃±3℃下且於濕度為45%±5%下較佳為60°~90°,更佳為65°以上,進而佳為70°以上。 The receding contact angle of the sensitizing ray-sensitive or radiation-sensitive resin film is usually at room temperature of 23 ° C ± 3 ° C and at a humidity of 45% ± 5%, preferably 60 ° to 90 °, more preferably Preferably, it is 65° or more, and further preferably 70° or more.

感光化射線性或感放射線性樹脂組成物中的樹脂(Aa)的含有率能以感光化射線性或感放射線性樹脂膜的後退接觸角成為上述範圍的方式適當調整而使用,以感光化射線性或感放射線性樹脂組成物的總固體成分為基準,較佳為0.01質量%~30質量%,更佳為0.01質量%~20質量%,進而佳為0.01質量%~10質量%,尤佳為0.1質量%~5質量%。樹脂(Aa)如上述般偏向存在於界面上,但與界面活性劑不同,未必要於分子內具有親水基,可對將極性/非極性物質均勻混合並無幫助。 The content of the resin (Aa) in the sensitizing ray-sensitive or radiation-sensitive resin composition can be appropriately adjusted and used to form a sensitized ray so that the reclining contact angle of the sensitizing ray-sensitive or radiation-sensitive resin film is within the above range. The total solid content of the radiation or linear radiation resin composition is preferably from 0.01% by mass to 30% by mass, more preferably from 0.01% by mass to 20% by mass, even more preferably from 0.01% by mass to 10% by mass, particularly preferably from 0.01% by mass to 10% by mass. It is 0.1% by mass to 5% by mass. The resin (Aa) is present at the interface as described above, but unlike the surfactant, it is not necessary to have a hydrophilic group in the molecule, and it is not helpful to uniformly mix the polar/nonpolar substance.

於液浸曝光步驟中,液浸液必須追隨於曝光頭高速於晶圓上掃描並形成曝光圖案的動作而於晶圓上移動,故動態狀態下的液浸液對抗蝕劑膜的接觸角變重要,對抗蝕劑要求液滴不殘存而追隨於曝光頭的高速掃描的性能。 In the immersion exposure step, the liquid immersion liquid must follow the high-speed scanning of the exposure head on the wafer and form an exposure pattern to move on the wafer, so that the contact angle of the liquid immersion liquid to the resist film in the dynamic state becomes It is important that the resist does not remain in the resist and follows the performance of the high speed scanning of the exposure head.

當然樹脂(Aa)較佳為與後述樹脂(Ab)同樣地金屬等 雜質少,並且殘留單體或低聚物成分為0質量%~10質量%,更佳為0質量%~5質量%,進而更佳為0質量%~1質量%。藉此,可獲得並無液中異物或感度等的經時變化的抗蝕劑組成物。另外,就解析度、抗蝕劑形狀、抗蝕劑圖案的側壁、粗糙度等方面而言,分子量分佈(Mw/Mn,亦稱為分散度)較佳為1~3的範圍,更佳為1~2,進而佳為1~1.8,最佳為1~1.5的範圍。 Of course, the resin (Aa) is preferably a metal or the like similar to the resin (Ab) described later. The amount of impurities is small, and the residual monomer or oligomer component is from 0% by mass to 10% by mass, more preferably from 0% by mass to 5% by mass, even more preferably from 0% by mass to 1% by mass. Thereby, a resist composition having no change in the amount of foreign matter, sensitivity, or the like in the liquid can be obtained. Further, the molecular weight distribution (Mw/Mn, also referred to as dispersion degree) is preferably in the range of 1 to 3 in terms of resolution, resist shape, side wall of the resist pattern, roughness, and the like, and more preferably 1~2, and then preferably 1~1.8, the best range is 1~1.5.

樹脂(Aa)亦可利用各種市售品,或亦可依據常法(例如自由基聚合或陰離子聚合)來合成。例如可利用與後述樹脂(Ab)中記載的樹脂(Ab)的通常的合成方法相同的方法來合成。 The resin (Aa) can also be synthesized by various commercial products, or can be synthesized according to a usual method (for example, radical polymerization or anionic polymerization). For example, it can be synthesized by the same method as the usual synthesis method of the resin (Ab) described in the resin (Ab) described later.

以下示出樹脂(Aa)的具體例,但本發明不限定於此。 Specific examples of the resin (Aa) are shown below, but the present invention is not limited thereto.

[化78] [化78]

[2]對顯影液的溶解性因酸的作用而變化的樹脂(Ab) [2] Resin in which the solubility of the developer changes due to the action of acid (Ab)

本發明的組成物含有樹脂(Ab),該樹脂(Ab)含有後述通式(A)所表示的重複單元、且對顯影液的溶解性因酸的作用而變 化。 The composition of the present invention contains a resin (Ab) containing a repeating unit represented by the following formula (A), and the solubility in the developing solution is changed by the action of an acid. Chemical.

樹脂(Ab)為對顯影液的溶解性因酸的作用而變化的樹脂,具體而言,因酸的作用而對鹼性顯影液的溶解度增大,或對以有機溶劑作為主成分的顯影液的溶解度減少。 The resin (Ab) is a resin which changes the solubility of the developer due to the action of an acid, and specifically, the solubility of the alkaline developer due to the action of the acid is increased, or the developer having the organic solvent as a main component The solubility is reduced.

樹脂(Ab)較佳為於鹼性顯影液中為不溶或難溶性。 The resin (Ab) is preferably insoluble or poorly soluble in an alkaline developer.

樹脂(Ab)含有具有酚性羥基的下述通式(A)所表示的重複單元。 The resin (Ab) contains a repeating unit represented by the following formula (A) having a phenolic hydroxyl group.

上述通式中,R21、R22及R23分別獨立地表示氫原子、烷基、鹵素原子、氰基或烷氧基羰基。其中,R22亦可與Ar2鍵結而形成環,該情形的R22表示單鍵或伸烷基。 In the above formula, R 21 , R 22 and R 23 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group. Wherein R 22 may also be bonded to Ar 2 to form a ring, and in this case, R 22 represents a single bond or an alkylene group.

X2表示單鍵、-COO-或-CONR30-,R30表示氫原子或烷基。 X 2 represents a single bond, -COO- or -CONR 30 -, and R 30 represents a hydrogen atom or an alkyl group.

L2表示單鍵或伸烷基。 L 2 represents a single bond or an alkylene group.

Ar2表示(n+1)價的芳香環基,與R22鍵結而形成環的情形時,表示(n+2)價的芳香環基。 Ar 2 represents an (n+1)-valent aromatic ring group, and when R 22 is bonded to form a ring, it represents an (n+2)-valent aromatic ring group.

n表示1~4的整數。 n represents an integer from 1 to 4.

上述通式(A)中的R21、R22及R23的烷基較佳可列舉:可具有取代基的甲基、乙基、丙基、異丙基、正丁基、第二丁基、己基、2-乙基己基、辛基、十二烷基等碳數20以下的烷基,更佳可列舉碳數8以下的烷基,尤佳可列舉碳數3以下的烷基。 The alkyl group of R 21 , R 22 and R 23 in the above formula (A) is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group or a second butyl group which may have a substituent. An alkyl group having a carbon number of 20 or less, such as a hexyl group, a 2-ethylhexyl group, an octyl group or a dodecyl group, more preferably an alkyl group having 8 or less carbon atoms, and particularly preferably an alkyl group having 3 or less carbon atoms.

烷氧基羰基所含的烷基較佳為與上述R21、R22及R23的烷基相同的基團。 The alkyl group contained in the alkoxycarbonyl group is preferably the same group as the alkyl group of the above R 21 , R 22 and R 23 .

鹵素原子可列舉氟原子、氯原子、溴原子及碘原子,尤佳為氟原子。 The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and particularly preferably a fluorine atom.

上述各基團的較佳取代基例如可列舉:烷基、環烷基、芳基、胺基、醯胺基、醯脲基、胺基甲酸乙酯基、羥基、羧基、鹵素原子、烷氧基、硫醚基、醯基、醯氧基、烷氧基羰基、氰基、硝基等,取代基的碳數較佳為8以下。 Preferred substituents of the above respective groups include, for example, an alkyl group, a cycloalkyl group, an aryl group, an amine group, a decylamino group, a guanidino group, an amino urethane group, a hydroxyl group, a carboxyl group, a halogen atom, and an alkoxy group. The substituent, the thiol group, the fluorenyl group, the decyloxy group, the alkoxycarbonyl group, the cyano group, the nitro group and the like have a carbon number of preferably 8 or less.

Ar2表示(n+1)價的芳香環基。n為1的情形時的二價芳香環基可具有取代基,例如可列舉以下基團作為較佳例:伸苯基、甲伸苯基、伸萘基、伸蒽基等碳數6~18的伸芳基,或含有例如噻吩、呋喃、吡咯、苯并噻吩、苯并呋喃、苯并吡咯、三嗪、咪唑、苯并咪唑、三唑、噻二唑、噻唑等雜環的芳香環基。 Ar 2 represents an (n+1)-valent aromatic ring group. When the n is 1, the divalent aromatic ring group may have a substituent. For example, the following groups may be mentioned as preferred examples: a carbon number of 6 to 18 such as a phenyl group, a methylphenyl group, a naphthyl group, and a fluorenyl group. Aryl group, or an aromatic ring group containing a heterocyclic ring such as thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole .

n為2以上的整數的情形時的(n+1)價的芳香環基的具體例可較佳地列舉:自二價芳香環基的上述具體例中去掉(n-1) 個任意的氫原子而成的基團。 A specific example of the (n+1)-valent aromatic ring group in the case where n is an integer of 2 or more is preferably exemplified by (n-1) removed from the above specific example of the divalent aromatic ring group. a group of arbitrary hydrogen atoms.

(n+1)價的芳香環基可更具有取代基。 The (n+1)-valent aromatic ring group may have a more substituent.

由X2所表示的-CONR30-(R30表示氫原子、烷基)中的R30的烷基可列舉與R21~R23的烷基相同的基團。 The alkyl group of R 30 in -CONR 30 - (R 30 represents a hydrogen atom or an alkyl group) represented by X 2 may be the same as the alkyl group of R 21 to R 23 .

X2較佳為單鍵、-COO-、-CONH-,更佳為單鍵、-COO-。 X 2 is preferably a single bond, -COO-, -CONH-, more preferably a single bond, -COO-.

L2的伸烷基較佳可列舉:可具有取代基的亞甲基、伸乙基、伸丙基、伸丁基、伸己基、伸辛基等碳數1個~8個的基團。 The alkylene group of L 2 is preferably a group having a carbon number of from 1 to 8 such as a methylene group which may have a substituent, an exoethyl group, a propyl group, a butyl group, a hexyl group, and a octyl group.

Ar2更佳為可具有取代基的碳數6~18的芳香環基,尤佳為苯環基、萘環基、聯苯環基。 Ar 2 is more preferably an aromatic ring group having 6 to 18 carbon atoms which may have a substituent, and particularly preferably a benzene ring group, a naphthalene ring group or a biphenyl ring group.

該重複單元較佳為具備羥基苯乙烯結構。即,Ar2較佳為苯環基。 The repeating unit preferably has a hydroxystyrene structure. That is, Ar 2 is preferably a benzene ring group.

以下示出通式(A)所表示的重複單元的具體例,但本發明不限定於該些具體例。式中,a表示1或2。 Specific examples of the repeating unit represented by the general formula (A) are shown below, but the present invention is not limited to the specific examples. Where a represents 1 or 2.

[化80] [化80]

[化81] [化81]

通式(A)所表示的重複單元較佳為下述式(Ab1)或式(Ab2)所表示的重複單元。於本發明的一形態中,較佳為式(Ab1)。 The repeating unit represented by the formula (A) is preferably a repeating unit represented by the following formula (Ab1) or formula (Ab2). In one aspect of the invention, the formula (Ab1) is preferred.

式(Ab2)中,R23與通式(A)中的R23為相同含意。 In the formula (Ab2), R 23 in the general formula (A) is of the same meaning as R 23.

樹脂(Ab)亦可含有兩種以上的通式(A)所表示的重複單元。 The resin (Ab) may also contain two or more repeating units represented by the formula (A).

樹脂(Ab)於一態樣中,較佳為含有下述通式(Ab3)所表示的重複單元。 The resin (Ab) preferably contains a repeating unit represented by the following formula (Ab3) in one aspect.

[化83] [化83]

式中,n表示1~5的整數,m表示滿足1≦m+n≦5的關係的0~4的整數。n較佳為1或2,更佳為1。m較佳為0~2,更佳為0或1,尤佳為0。 In the formula, n represents an integer of 1 to 5, and m represents an integer of 0 to 4 satisfying the relationship of 1 ≦ m + n ≦ 5 . n is preferably 1 or 2, more preferably 1. m is preferably 0 to 2, more preferably 0 or 1, and particularly preferably 0.

S1表示取代基。於m為2以上的情形時,多個S1可彼此相同亦可不同。 S 1 represents a substituent. When m is 2 or more, a plurality of S 1 's may be the same or different from each other.

由S1所表示的取代基例如可列舉:烷基、烷氧基、醯基、醯氧基、芳基、芳氧基、芳烷基、芳烷氧基、羥基、鹵素原子、氰基、硝基、磺醯基胺基、烷硫基、芳硫基、芳烷硫基。 Examples of the substituent represented by S 1 include an alkyl group, an alkoxy group, a decyl group, a decyloxy group, an aryl group, an aryloxy group, an aralkyl group, an aralkyloxy group, a hydroxyl group, a halogen atom, and a cyano group. Nitro, sulfonylamino, alkylthio, arylthio, aralkylthio.

例如,烷基、環烷基較佳為甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、環戊基、己基、環己基、辛基、十二烷基等碳數1個~20個的直鏈或分支狀烷基、環烷基。該些基團可更具有取代基。 For example, an alkyl group or a cycloalkyl group is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, or a octyl group. A linear or branched alkyl group having a carbon number of 1 to 20 such as a decyl group or a cycloalkyl group. These groups may have more substituents.

可進一步具有的取代基可列舉:烷基、烷氧基、羥基、鹵素原子、硝基、醯基、醯氧基、醯基胺基、磺醯基胺基、烷硫基、芳硫基、芳烷硫基、噻吩羰氧基、噻吩甲基羰氧基、吡咯啶酮殘基等雜環殘基等,較佳為碳數12以下的取代基。 Examples of the substituent which may be further included are an alkyl group, an alkoxy group, a hydroxyl group, a halogen atom, a nitro group, a decyl group, a decyloxy group, a decylamino group, a sulfonylamino group, an alkylthio group, an arylthio group, A heterocyclic residue such as an aralkylthio group, a thiophenecarbonyloxy group, a thiophenemethylcarbonyloxy group or a pyrrolidone residue is preferably a substituent having a carbon number of 12 or less.

具有取代基的烷基例如可列舉:環己基乙基、烷基羰氧 基甲基、烷基羰氧基乙基、環烷基羰氧基甲基、環烷基羰氧基乙基、芳基羰氧基乙基、芳烷基羰氧基乙基、烷氧基甲基、環烷氧基甲基、芳氧基甲基、芳烷氧基甲基、烷氧基乙基、環烷氧基乙基、芳氧基乙基、芳烷氧基乙基、烷硫基甲基、環烷硫基甲基、芳硫基甲基、芳烷硫基甲基、烷硫基乙基、環烷硫基乙基、芳硫基乙基、芳烷硫基乙基等。 Examples of the alkyl group having a substituent include a cyclohexylethyl group and an alkylcarbonyloxy group. Methyl, alkylcarbonyloxyethyl, cycloalkylcarbonyloxymethyl, cycloalkylcarbonyloxyethyl, arylcarbonyloxyethyl, aralkylcarbonyloxyethyl, alkoxy Methyl, cycloalkoxymethyl, aryloxymethyl, aralkoxymethyl, alkoxyethyl, cycloalkoxyethyl, aryloxyethyl, aralkyloxyethyl, alkane Thiomethyl, cycloalkylthiomethyl, arylthiomethyl, aralkylthiomethyl, alkylthioethyl, cycloalkylthioethyl, arylthioethyl, aralkylthioethyl Wait.

該些基團中的烷基、環烷基並無特別限定,可更具有上述烷基、環烷基、烷氧基等取代基。 The alkyl group or the cycloalkyl group in the groups is not particularly limited, and may have a substituent such as the above alkyl group, cycloalkyl group or alkoxy group.

上述烷基羰氧基乙基、環烷基羰氧基乙基的例子可列舉環己基羰氧基乙基、第三丁基環己基羰氧基乙基、正丁基環己基羰氧基乙基等。 Examples of the above alkylcarbonyloxyethyl group and cycloalkylcarbonyloxyethyl group include a cyclohexylcarbonyloxyethyl group, a tert-butylcyclohexylcarbonyloxyethyl group, and a n-butylcyclohexylcarbonyloxy group. Base.

芳基亦無特別限定,通常可列舉苯基、二甲苯基、甲苯甲醯基、枯烯基、萘基、蒽基等碳數6~14的基團,可更具有上述烷基、環烷基、烷氧基等取代基。 The aryl group is not particularly limited, and examples thereof include a group having 6 to 14 carbon atoms such as a phenyl group, a xylyl group, a tolylmethyl group, a cumenyl group, a naphthyl group or a decyl group, and the alkyl group and the naphthene group may be further contained. a substituent such as a group or an alkoxy group.

上述芳氧基乙基的例子可列舉苯氧基乙基、環己基苯氧基乙基等。該些基團可更具有取代基。 Examples of the above aryloxyethyl group include a phenoxyethyl group and a cyclohexylphenoxyethyl group. These groups may have more substituents.

芳烷基亦無特別限定,可列舉苄基等。 The aralkyl group is also not particularly limited, and examples thereof include a benzyl group and the like.

上述芳烷基羰氧基乙基的例子可列舉苄基羰氧基乙基等。該些基團可更具有取代基。 Examples of the above aralkylcarbonyloxyethyl group include a benzylcarbonyloxyethyl group and the like. These groups may have more substituents.

由通式(Ab3)所表示的重複單元例如可列舉以下重複單元。 The repeating unit represented by the general formula (Ab3) may, for example, be the following repeating unit.

[化84] [化84]

就更可靠地達成高的解析力、感度、曝光後烘烤(Post Exposure Bake,PEB)溫度依存性及耐乾式蝕刻性、以及良好的圖案形狀的觀點而言,相對於上述樹脂(Ab)中的所有重複單元,樹脂(Ab)中的通式(A)所表示的重複單元的含有率(含有多種的情形時為其合計量)較佳為10mol%以上、75mol%以下,更佳為15mol%以上、70mol%以下,進而佳為20mol%以上、65mol%以下。 With respect to achieving higher resolution, sensitivity, Post Exposure Bake (PEB) temperature dependence, dry etching resistance, and good pattern shape, the resin (Ab) is used. The content of the repeating unit represented by the formula (A) in the resin (Ab) (the total amount in the case of containing a plurality of repeating units) is preferably 10 mol% or more and 75 mol% or less, more preferably 15 mol. % or more and 70 mol% or less, and further preferably 20 mol% or more and 65 mol% or less.

相對於樹脂(Ab)中的所有重複單元,樹脂(Ab)中的通式(Ab3)所表示的重複單元的含有率較佳為0mol%~90mol%,更佳為5mol%~80mol%,進而佳為10mol%~70mol%,尤佳為20mol%~60mol%。 The content of the repeating unit represented by the formula (Ab3) in the resin (Ab) is preferably from 0 mol% to 90 mol%, more preferably from 5 mol% to 80 mol%, based on all the repeating units in the resin (Ab). Preferably, it is 10 mol% to 70 mol%, and particularly preferably 20 mol% to 60 mol%.

樹脂(Ab)中,亦較佳為含有下述通式所表示的重複單元。下述通式中,j表示0~3的整數,較佳為0~2的整數,更佳 為0或1。 In the resin (Ab), it is also preferred to contain a repeating unit represented by the following formula. In the following formula, j represents an integer of 0 to 3, preferably an integer of 0 to 2, more preferably Is 0 or 1.

由該些通式所表示的重複單元可列舉以下具體例。 The following specific examples are given to the repeating unit represented by these general formulas.

[化86] [化86]

樹脂(Ab)較佳為更含有具有酸分解性基的重複單元。 The resin (Ab) preferably further contains a repeating unit having an acid-decomposable group.

酸分解性基例如可列舉:羧基、酚性羥基、磺酸基、硫醇基等鹼可溶性基的氫原子經因酸的作用而脫離的基團保護的基團。 Examples of the acid-decomposable group include a group protected by a group in which a hydrogen atom of an alkali-soluble group such as a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group or a thiol group is removed by the action of an acid.

因酸的作用而脫離的基團例如可列舉:-C(R36)(R37)(R38)、-C(R36)(R37)(OR39)、-C(=O)-O-C(R36)(R37)(R38)、 -C(R01)(R02)(OR39)、-C(R01)(R02)-C(=O)-O-C(R36)(R37)(R38)等。 Examples of the group which is detached by the action of an acid include -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), -C(=O)- OC(R 36 )(R 37 )(R 38 ), -C(R 01 )(R 02 )(OR 39 ), -C(R 01 )(R 02 )-C(=O)-OC(R 36 ) (R 37 ) (R 38 ) and the like.

式中,R36~R39分別獨立表示烷基、環烷基、芳基、芳烷基或烯基。R36與R37亦可相互鍵結而形成環。 In the formula, R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group. R 36 and R 37 may also be bonded to each other to form a ring.

R01~R02分別獨立地表示氫原子、烷基、環烷基、芳基、芳烷基或烯基。 R 01 to R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group.

樹脂(Ab)於一態樣中,較佳為含有下述通式(A1)及通式(A2)所表示的重複單元的至少一種。 The resin (Ab) preferably contains at least one of the repeating units represented by the following formula (A1) and formula (A2) in one aspect.

通式(A1)中,n表示1~5的整數,m表示滿足1≦m+n≦5的關係的0~4的整數。 In the general formula (A1), n represents an integer of 1 to 5, and m represents an integer of 0 to 4 satisfying the relationship of 1 ≦ m + n ≦ 5 .

S1表示取代基(氫原子除外),於m為2以上的情形時,多個S1可彼此相同亦可互不相同。 S 1 represents a substituent (excluding a hydrogen atom), and when m is 2 or more, a plurality of S 1 's may be the same or different from each other.

A1表示氫原子或因酸的作用而脫離的基團。其中,至少一個A1表示因酸的作用而脫離的基團。於n≧2的情形時,多個A1可彼此相同亦可互不相同。 A 1 represents a hydrogen atom or a group which is desorbed by the action of an acid. Among them, at least one A 1 represents a group which is detached by the action of an acid. In the case of n≧2, the plurality of A 1 may be identical to each other or different from each other.

通式(A2)中,X表示氫原子、烷基、羥基、烷氧基、鹵素原子、氰基、硝基、醯基、醯氧基、環烷基、環烷基氧基、芳基、羧基、烷氧基羰基、烷基羰氧基或芳烷基。 In the formula (A2), X represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a decyl group, a decyloxy group, a cycloalkyl group, a cycloalkyloxy group, an aryl group, Carboxy, alkoxycarbonyl, alkylcarbonyloxy or aralkyl.

T表示單鍵或二價連結基。 T represents a single bond or a divalent linking group.

A2表示因酸的作用而脫離的基團。 A 2 represents a group which is detached by the action of an acid.

首先,對由通式(A1)所表示的重複單元加以說明。 First, the repeating unit represented by the general formula (A1) will be described.

如上所述,n表示1~5的整數,較佳為1或2,尤佳為1。 As described above, n represents an integer of 1 to 5, preferably 1 or 2, and particularly preferably 1.

如上所述,m表示滿足1≦m+n≦5的關係的0~4的整數,較佳為0~2,更佳為0或1,尤佳為0。 As described above, m represents an integer of 0 to 4 satisfying the relationship of 1 ≦ m + n ≦ 5, preferably 0 to 2, more preferably 0 or 1, and particularly preferably 0.

如上所述,S1表示取代基(氫原子除外)。該取代基例如可列舉與上述關於通式(Ab3)中的S1所說明的取代基相同的基團。 As described above, S 1 represents a substituent (except a hydrogen atom). The substituent may, for example, be the same as the substituent described above for S 1 in the formula (Ab3).

如上所述,A1表示氫原子或因酸的作用而脫離的基團,至少一個A1為因酸的作用而脫離的基團。 As described above, A 1 represents a hydrogen atom or a group which is desorbed by the action of an acid, and at least one of A 1 is a group which is desorbed by the action of an acid.

因酸的作用而脫離的基團例如可列舉:第三丁基及第三戊基等三級烷基、第三丁氧基羰基、第三丁氧基羰基甲基、以及由式-C(L1)(L2)O-Z2所表示的縮醛基。 Examples of the group which is detached by the action of an acid include a tertiary alkyl group such as a third butyl group and a third pentyl group, a third butoxycarbonyl group, a third butoxycarbonylmethyl group, and a formula -C ( L 1 ) (L 2 ) an acetal group represented by OZ 2 .

以下,對由式-C(L1)(L2)-O-Z2所表示的縮醛基加以說明。式中,L1及L2分別獨立地表示氫原子、烷基、環烷基或芳烷基。Z2表示烷基、環烷基或芳烷基。再者,Z2與L1亦可相互鍵結而形成5員環或6員環。 Hereinafter, the acetal group represented by the formula -C(L 1 )(L 2 )-OZ 2 will be described. In the formula, L 1 and L 2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group or an aralkyl group. Z 2 represents an alkyl group, a cycloalkyl group or an aralkyl group. Further, Z 2 and L 1 may be bonded to each other to form a 5-membered ring or a 6-membered ring.

烷基可為直鏈烷基,亦可為分支鏈烷基。 The alkyl group may be a linear alkyl group or a branched alkyl group.

直鏈烷基較佳為碳數1~30的基團,更佳為碳數1~20的基團。此種直鏈烷基例如可列舉:甲基、乙基、正丙基、正丁基、第二丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基及正癸基。 The linear alkyl group is preferably a group having 1 to 30 carbon atoms, more preferably a group having 1 to 20 carbon atoms. Examples of such a linear alkyl group include methyl, ethyl, n-propyl, n-butyl, t-butyl, t-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, and壬基和正癸基.

分支鏈烷基較佳為碳數3~30的基團,更佳為碳數3~20的基團。此種分支鏈烷基例如可列舉:異丙基、異丁基、第三丁基、異戊基、第三戊基、異己基、第三己基、異庚基、第三庚基、異辛基、第三辛基、異壬基及第三癸醯基。 The branched alkyl group is preferably a group having 3 to 30 carbon atoms, more preferably a group having 3 to 20 carbon atoms. Examples of such a branched alkyl group include an isopropyl group, an isobutyl group, a tert-butyl group, an isopentyl group, a third pentyl group, an isohexyl group, a third hexyl group, an isoheptyl group, a third heptyl group, and an isooctyl group. Base, third octyl, isodecyl and third sulfhydryl.

該些烷基可更具有取代基。該取代基例如可列舉:羥基;氟、氯、溴及碘原子等鹵素原子;硝基;氰基;醯胺基;磺醯胺基;甲基、乙基、丙基、異丙基、正丁基、第二丁基、己基、2-乙基己基、辛基及十二烷基等烷基;甲氧基、乙氧基、羥基乙氧基、丙氧基、羥基丙氧基及丁氧基等烷氧基;甲氧基羰基及乙氧基羰基等烷氧基羰基;甲醯基、乙醯基及苯甲醯基等醯基;乙醯氧基及丁醯氧基等醯氧基;以及羧基。 The alkyl groups may have more substituents. Examples of the substituent include a hydroxyl group; a halogen atom such as fluorine, chlorine, bromine or an iodine atom; a nitro group; a cyano group; a guanamine group; a sulfonylamino group; a methyl group, an ethyl group, a propyl group, an isopropyl group, and a positive group. Alkyl groups such as butyl, t-butyl, hexyl, 2-ethylhexyl, octyl and dodecyl; methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy and butyl Alkoxy group such as oxy group; alkoxycarbonyl group such as methoxycarbonyl group and ethoxycarbonyl group; fluorenyl group such as methyl ketone group, ethyl acetyl group and benzamidine group; oxime group such as ethoxy group and butyl oxy group Base; and carboxyl group.

烷基尤佳為乙基、異丙基、異丁基、環己基乙基、苯基甲基或苯基乙基。 The alkyl group is preferably an ethyl group, an isopropyl group, an isobutyl group, a cyclohexylethyl group, a phenylmethyl group or a phenylethyl group.

環烷基可為單環型,亦可為多環型。後者的情況下,環烷基亦可為橋聯式。即,於該情形時,環烷基亦可具有橋聯結構。再者,環烷基中的碳原子的一部分可經氧原子等雜原子所取代。 The cycloalkyl group may be a monocyclic type or a polycyclic type. In the latter case, the cycloalkyl group may also be bridged. That is, in this case, the cycloalkyl group may also have a bridge structure. Further, a part of the carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

單環型的環烷基較佳為碳數3~8的基團。此種環烷基例如可列舉環丙基、環戊基、環己基、環丁基及環辛基。 The monocyclic cycloalkyl group is preferably a group having 3 to 8 carbon atoms. Examples of such a cycloalkyl group include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group.

多環型的環烷基例如可列舉具有雙環、三環或四環結構的基團。多環型的環烷基較佳為碳數6~20的基團。此種環烷基例如可列舉:金剛烷基、降冰片基、異冰片基、莰基、二環戊基、α-蒎基(α-pinanyl)、三環癸基、四環十二烷基及雄甾烷基。 The polycyclic cycloalkyl group may, for example, be a group having a bicyclic, tricyclic or tetracyclic structure. The polycyclic cycloalkyl group is preferably a group having 6 to 20 carbon atoms. Examples of such a cycloalkyl group include adamantyl group, norbornyl group, isobornyl group, fluorenyl group, dicyclopentyl group, α-pinanyl group, tricyclodecyl group, tetracyclododecyl group. And male alkyl.

L1、L2及Z2的芳烷基例如可列舉苄基及苯乙基等碳數7~15的基團。 Examples of the aralkyl group of L 1 , L 2 and Z 2 include a group having 7 to 15 carbon atoms such as a benzyl group and a phenethyl group.

該些芳烷基可更具有取代基。該取代基較佳可列舉:烷氧基、羥基、鹵素原子、硝基、醯基、醯基胺基、磺醯基胺基、烷硫基、芳硫基及芳烷硫基。具有取代基的芳烷基例如可列舉:烷氧基苄基、羥基苄基及苯硫基苯乙基。再者,該些芳烷基可具有的取代基的碳數較佳為12以下。 The aralkyl groups may have more substituents. Preferred examples of the substituent include an alkoxy group, a hydroxyl group, a halogen atom, a nitro group, a decyl group, a decylamino group, a sulfonylamino group, an alkylthio group, an arylthio group and an aralkylthio group. Examples of the aralkyl group having a substituent include an alkoxybenzyl group, a hydroxybenzyl group, and a phenylthiophenethyl group. Further, the substituent which the aralkyl group may have has a carbon number of preferably 12 or less.

Z2與L1可相互鍵結而形成的5員或6員環例如可列舉四氫吡喃環及四氫呋喃環。這些中,尤佳為四氫吡喃環。 Examples of the 5-member or 6-membered ring in which Z 2 and L 1 are bonded to each other include a tetrahydropyran ring and a tetrahydrofuran ring. Among these, a tetrahydropyran ring is particularly preferred.

Z2較佳為直鏈或分支鏈狀的烷基。藉此,本發明的效果更顯著。 Z 2 is preferably a linear or branched alkyl group. Thereby, the effect of the present invention is more remarkable.

以下列舉由通式(A1)所表示的重複單元的具體例,但不限定於該些具體例。 Specific examples of the repeating unit represented by the general formula (A1) are listed below, but are not limited to these specific examples.

[化88] [化88]

[化89] [化89]

繼而,對由通式(A2)所表示的重複單元加以說明。 Next, the repeating unit represented by the general formula (A2) will be described.

如上所述,X表示氫原子、烷基、羥基、烷氧基、鹵素原子、氰基、硝基、醯基、醯氧基、環烷基、環烷基氧基、芳基、羧基、烷氧基羰基、烷基羰氧基或芳烷基。 As described above, X represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a decyl group, a decyloxy group, a cycloalkyl group, a cycloalkyloxy group, an aryl group, a carboxyl group, or an alkane. An oxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group.

作為X的烷基可具有取代基,可為直鏈、分支的任一種。直鏈烷基較佳為碳數1~30,更佳為1~20,例如可列舉:甲基、乙基、正丙基、正丁基、第二丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基等。分支烷基較佳為碳數3~30,更佳為3~20,例如可列舉:異丙基、異丁基、第三丁 基、異戊基、第三戊基、異己基、第三己基、異庚基、第三庚基、異辛基、第三辛基、異壬基、第三癸醯基等。 The alkyl group as X may have a substituent, and may be either a straight chain or a branched one. The linear alkyl group preferably has a carbon number of from 1 to 30, more preferably from 1 to 20, and examples thereof include a methyl group, an ethyl group, a n-propyl group, a n-butyl group, a second butyl group, a t-butyl group, and a n-pentyl group. Base, n-hexyl, n-heptyl, n-octyl, n-decyl, n-decyl and the like. The branched alkyl group preferably has a carbon number of 3 to 30, more preferably 3 to 20, and examples thereof include an isopropyl group, an isobutyl group, and a third group. A group, an isopentyl group, a third amyl group, an isohexyl group, a third hexyl group, an isoheptyl group, a third heptyl group, an isooctyl group, a third octyl group, an isodecyl group, a third fluorenyl group and the like.

作為X的烷氧基可具有取代基,例如為碳數1~8的上述烷氧基,例如可列舉甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、環己氧基等。 The alkoxy group of X may have a substituent, and is, for example, the above alkoxy group having 1 to 8 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, and a hexyloxy group. , cyclohexyloxy and the like.

作為X的鹵素原子可列舉氟原子、氯原子、溴原子及碘原子,較佳為氟原子。 The halogen atom of X may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

作為X的醯基可具有取代基,例如為碳數2個~8個的醯基,具體可列舉:甲醯基、乙醯基、丙醯基、丁醯基、三甲基乙醯基、苯甲醯基等。 The fluorenyl group as X may have a substituent, and is, for example, a fluorenyl group having 2 to 8 carbon atoms, and specific examples thereof include a fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl fluorenyl group, a trimethyl ethane group, and a benzoic acid group.醯基等.

作為X的醯氧基可具有取代基,較佳為碳數2~8的醯氧基,例如可列舉:乙醯氧基、丙醯氧基、丁醯氧基、戊醯氧基、三甲基乙醯基氧基、己醯氧基、辛醯氧基、苯甲醯氧基等。 The decyloxy group of X may have a substituent, and is preferably a fluorenyloxy group having 2 to 8 carbon atoms, and examples thereof include an ethoxycarbonyl group, a propenyloxy group, a butyloxy group, a pentyloxy group, and a trimethyl group. Ethyl ethoxycarbonyl, hexyloxy, octyloxy, benzhydryloxy and the like.

作為X的環烷基可具有取代基,可為單環型,亦可為多環型,亦可為橋聯式。例如環烷基亦可具有橋聯結構。單環型較佳為碳數3~8的環烷基,例如可列舉環丙基、環戊基、環己基、環丁基、環辛基等。多環型可列舉具有碳數5以上的雙環、三環、四環結構等的基團,較佳為碳數6~20的環烷基,例如可列舉:金剛烷基、降冰片基、異冰片基、莰基、二環戊基、α-蒎基、三環癸基、四環十二烷基、雄甾烷基等。另外,環烷基中的碳原子的一部分可經氧原子等雜原子所取代。 The cycloalkyl group as X may have a substituent, and may be a monocyclic type, a polycyclic type, or a bridged type. For example, a cycloalkyl group may also have a bridge structure. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. The polycyclic type may be a group having a bicyclic, tricyclic or tetracyclic structure having a carbon number of 5 or more, and preferably a cycloalkyl group having 6 to 20 carbon atoms, and examples thereof include an adamantyl group, a norbornyl group, and a different Borne, fluorenyl, dicyclopentyl, α-fluorenyl, tricyclodecyl, tetracyclododecyl, androstalkyl. Further, a part of the carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

作為X的芳基可具有取代基,較佳為碳數6~14,例如 可列舉苯基、二甲苯基、甲苯甲醯基、枯烯基、萘基、蒽基等。 The aryl group as X may have a substituent, preferably a carbon number of 6 to 14, for example Phenyl, xylyl, tolylmethyl, cumenyl, naphthyl, anthracenyl, etc. are mentioned.

作為X的烷氧基羰基可具有取代基,較佳為碳數2~8,例如可列舉甲氧基羰基、乙氧基羰基、丙氧基羰基。 The alkoxycarbonyl group of X may have a substituent, and preferably has 2 to 8 carbon atoms, and examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, and a propoxycarbonyl group.

作為X的烷基羰氧基可具有取代基,較佳為碳數2~8,例如可列舉甲基羰氧基、乙基羰氧基。 The alkylcarbonyloxy group of X may have a substituent, and preferably has 2 to 8 carbon atoms, and examples thereof include a methylcarbonyloxy group and an ethylcarbonyloxy group.

作為X的芳烷基可具有取代基,較佳為碳數7~16的芳烷基,例如可列舉苄基。 The aralkyl group as X may have a substituent, and is preferably an aralkyl group having 7 to 16 carbon atoms, and examples thereof include a benzyl group.

作為X的烷基、烷氧基、醯基、環烷基、芳基、烷氧基羰基、烷基羰氧基、芳烷基可更具有的取代基可列舉:羥基、氟原子、氯原子、溴原子、碘原子、烷基、羥基、烷氧基、鹵素原子、氰基、硝基、醯基、醯氧基、環烷基、芳基、羧基、烷氧基羰基、烷基羰氧基或芳烷基等。 Examples of the substituent which may further be an alkyl group, an alkoxy group, a decyl group, a cycloalkyl group, an aryl group, an alkoxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group of X include a hydroxyl group, a fluorine atom and a chlorine atom. , bromine atom, iodine atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, mercapto group, decyloxy group, cycloalkyl group, aryl group, carboxyl group, alkoxycarbonyl group, alkylcarbonyloxy group Base or aralkyl group.

如上所述,T表示單鍵或二價連結基。 As described above, T represents a single bond or a divalent linking group.

T的二價連結基可列舉伸烷基、-COO-Rt-基、-O-Rt-基等。式中,Rt表示伸烷基或伸環烷基。 The divalent linking group of T may, for example, be an alkyl group, a -COO-Rt- group or a -O-Rt- group. In the formula, Rt represents an alkylene group or a cycloalkyl group.

T較佳為單鍵或-COO-Rt-基。Rt較佳為碳數1~5的伸烷基,更佳為-CH2-基、-(CH2)3-基。 T is preferably a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a -CH 2 - group or a -(CH 2 ) 3 - group.

如上所述,A2表示因酸的作用而脫離的基團。即,由通式(A2)所表示的重複單元具備由「-COOA2」所表示的基團作為酸分解性基。A2例如可列舉與上文中關於通式(A1)中的A1所說明的基團相同的基團。 As described above, A 2 represents a group which is detached by the action of an acid. In other words, the repeating unit represented by the formula (A2) has a group represented by "-COOA 2 " as an acid-decomposable group. A 2 may, for example, be the same as the group described above for A 1 in the formula (A1).

A2較佳為烴基(較佳為碳數20以下,更佳為4~12), 更佳為第三丁基、第三戊基、具有脂環結構的烴基(例如脂環基自身及脂環基取代於烷基而成的基團)。 A 2 is preferably a hydrocarbon group (preferably having a carbon number of 20 or less, more preferably 4 to 12), more preferably a third butyl group, a third pentyl group or a hydrocarbon group having an alicyclic structure (for example, an alicyclic group itself and a fat group). a group in which a ring group is substituted with an alkyl group).

A2較佳為三級的烷基或三級的環烷基。 A 2 is preferably a tertiary alkyl group or a tertiary alkyl group.

脂環結構可為單環亦可為多環。具體可列舉碳數5以上的單環、雙環、三環、四環結構等。其碳數較佳為6個~30個,尤佳為碳數7個~25個。具有該些脂環結構的烴基可具有取代基。 The alicyclic structure may be a single ring or a polycyclic ring. Specific examples thereof include a monocyclic, bicyclic, tricyclic, and tetracyclic structure having a carbon number of 5 or more. The carbon number is preferably from 6 to 30, and particularly preferably from 7 to 25. The hydrocarbon group having such an alicyclic structure may have a substituent.

脂環結構的例子可列舉上述樹脂(Aa)中作為通式(KA-1)中的Zka的環烷基的例子而列舉的脂環結構(1)~脂環結構(50)。另外,較佳的脂環結構的具體例、及脂環結構可具有的取代基的具體例亦可列舉與作為通式(KA-1)中的Zka的脂環結構中說明的具體例相同的例子。 Examples of the alicyclic structure include an alicyclic structure (1) to an alicyclic structure (50) exemplified as the cycloalkyl group of Z ka in the general formula (KA-1) in the above resin (Aa). Further, specific examples of the preferred alicyclic structure and specific examples of the substituent which the alicyclic structure may have may be the same as the specific examples described in the alicyclic structure of Z ka in the general formula (KA-1). example of.

具有脂環結構的酸分解性基較佳為下述通式(pI)~通式(pV)所表示的基團。 The acid-decomposable group having an alicyclic structure is preferably a group represented by the following formula (pI) to formula (pV).

[化90] [化90]

上述通式(pI)~通式(pV)中,R11表示甲基、乙基、正丙基、異丙基、正丁基、異丁基或第二丁基,Z表示與碳原子一起形成脂環式烴基所必需的原子團。 In the above formula (pI) to formula (pV), R 11 represents a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a second butyl group, and Z represents a carbon atom. An atomic group necessary for forming an alicyclic hydrocarbon group.

R12~R16分別獨立地表示碳數1個~4個的直鏈或分支的烷基或脂環式烴基,其中,R12~R14中的至少一個或R15、R16的任一個表示脂環式烴基。 R 12 to R 16 each independently represent a straight or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, wherein at least one of R 12 to R 14 or any of R 15 and R 16 Represents an alicyclic hydrocarbon group.

R17~R21分別獨立地表示氫原子、碳數1個~4個的直鏈或分支的烷基或脂環式烴基,其中,R17~R21中至少一個表示脂 環式烴基。另外,R19、R21的任一個表示碳數1個~4個的直鏈或分支的烷基或脂環式烴基。 R 17 to R 21 each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms or an alicyclic hydrocarbon group, and at least one of R 17 to R 21 represents an alicyclic hydrocarbon group. Further, any of R 19 and R 21 represents a straight or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms.

R22~R25分別獨立地表示氫原子、碳數1個~4個的直鏈或分支的烷基或脂環式烴基,其中,R22~R25中至少一個表示脂環式烴基。另外,R23與R24亦可相互鍵結而形成環。 R 22 to R 25 each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or an alicyclic hydrocarbon group, and at least one of R 22 to R 25 represents an alicyclic hydrocarbon group. Further, R 23 and R 24 may be bonded to each other to form a ring.

通式(pI)~通式(pV)中,R12~R25的烷基可為經取代或未經取代的任一種,表示具有1個~4個碳原子的直鏈或分支的烷基。該烷基例如可列舉甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基等。 In the formula (pI) to the formula (pV), the alkyl group of R 12 to R 25 may be either substituted or unsubstituted, and represents a straight or branched alkyl group having 1 to 4 carbon atoms. . Examples of the alkyl group include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a second butyl group, and a third butyl group.

另外,上述烷基的進一步的取代基可列舉:碳數1個~4個的烷氧基、鹵素原子(氟原子、氯原子、溴原子、碘原子)、醯基、醯氧基、氰基、羥基、羧基、烷氧基羰基、硝基等。 Further, examples of the further substituent of the alkyl group include an alkoxy group having 1 to 4 carbon atoms, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom), a mercapto group, a decyloxy group, and a cyano group. , hydroxyl, carboxyl, alkoxycarbonyl, nitro, and the like.

R11~R25的脂環式烴基或Z與碳原子所形成的脂環式烴基可列舉上文中作為脂環結構所述的基團。 The alicyclic hydrocarbon group of R 11 to R 25 or the alicyclic hydrocarbon group formed by Z and a carbon atom may be exemplified as the group described above as the alicyclic structure.

通式(A2)所表示的重複單元於一形態中,較佳為下式所表示的重複單元的情形。 In the embodiment, the repeating unit represented by the formula (A2) is preferably a repeating unit represented by the following formula.

另外,通式(A2)所表示的重複單元於其他形態中,亦較佳為以下所示的通式(A3)所表示的重複單元的情形。 Further, in another embodiment, the repeating unit represented by the formula (A2) is also preferably a repeating unit represented by the formula (A3) shown below.

通式(A3)中,AR表示芳基。 In the formula (A3), AR represents an aryl group.

Rn表示烷基、環烷基或芳基。Rn與AR亦可相互鍵結而形成非芳香族環。 Rn represents an alkyl group, a cycloalkyl group or an aryl group. Rn and AR may also be bonded to each other to form a non-aromatic ring.

R表示氫原子、烷基、環烷基、鹵素原子、氰基或烷氧基羰基。 R represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.

對由通式(A3)所表示的重複單元加以詳細說明。 The repeating unit represented by the general formula (A3) will be described in detail.

如上所述,AR表示芳基。AR的芳基較佳為苯基、萘基、蒽基或茀基等碳數6~20的基團,更佳為碳數6~15的基團。 As described above, AR represents an aryl group. The aryl group of the AR is preferably a group having 6 to 20 carbon atoms such as a phenyl group, a naphthyl group, an anthracenyl group or a fluorenyl group, and more preferably a group having 6 to 15 carbon atoms.

於AR為萘基、蒽基或茀基的情形時,Rn所鍵結的碳原子與AR的鍵結位置並無特別限制。例如於AR為萘基的情形時,該碳原子可鍵結於萘基的α位上,亦可鍵結於β位上。或者於AR為蒽基的情形時,該碳原子可鍵結於蒽基的1位上,亦可鍵結於2位上,亦可鍵結於9位上。 In the case where AR is a naphthyl group, an anthracenyl group or a fluorenyl group, the bonding position of the carbon atom to which Rn is bonded to the AR is not particularly limited. For example, in the case where AR is a naphthyl group, the carbon atom may be bonded to the α-position of the naphthyl group or may be bonded to the β-position. Or in the case where AR is a sulfhydryl group, the carbon atom may be bonded to the 1 position of the sulfhydryl group, or may be bonded to the 2 position or may be bonded to the 9 position.

作為AR的芳基可具有一個以上的取代基。此種取代基的具體例例如可列舉:甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、己基、辛基及十二烷基等碳數1~20的直鏈或分支鏈烷基,含有該些烷基部分的烷氧基,環戊基及環己基等環烷基,含有該些環烷基部分的環烷氧基,羥基,鹵素原子,芳基,氰基,硝基,醯基,醯氧基,醯基胺基,磺醯基胺基,烷硫基,芳硫基,芳烷硫基,噻吩羰氧基,噻吩甲基羰氧基及吡咯啶酮殘基等雜環殘基。該取代基較佳為碳數1~5的直鏈或分支鏈烷基、含有該些烷基部分的烷氧基,更佳為對甲基或對甲氧基。 The aryl group as the AR may have one or more substituents. Specific examples of such a substituent include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, hexyl, octyl and dodecyl groups. a linear or branched alkyl group having 1 to 20 carbon atoms, an alkoxy group containing the alkyl moiety, a cycloalkyl group such as a cyclopentyl group and a cyclohexyl group, a cycloalkoxy group containing the cycloalkyl moiety, and a hydroxyl group , halogen atom, aryl, cyano, nitro, fluorenyl, decyloxy, decylamino, sulfonylamino, alkylthio, arylthio, aralkylthio, thiophenecarbonyloxy, thiophene A heterocyclic residue such as a methylcarbonyloxy group or a pyrrolidone residue. The substituent is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, an alkoxy group containing the alkyl group, and more preferably a p-methyl group or a p-methoxy group.

於作為AR的芳基具有多個取代基的情形時,多個取代基中的至少2個亦可相互鍵結而形成環。環較佳為5員環~8員環,更佳為5員環或6員環。另外,該環亦可為於環員中含有氧原子、氮原子、硫原子等雜原子的雜環。 When the aryl group as the AR has a plurality of substituents, at least two of the plurality of substituents may be bonded to each other to form a ring. The ring is preferably a 5-member ring to an 8-member ring, more preferably a 5-member ring or a 6-member ring. Further, the ring may be a hetero ring containing a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom in the ring member.

進而,該環可具有取代基。該取代基可列舉與下文中關於Rn可具有的取代基所述的基團相同的基團。 Further, the ring may have a substituent. The substituent may be the same as the group described below with respect to the substituent which Rn may have.

另外,就粗糙度性能的觀點而言,由通式(A3)所表示的重複單元較佳為含有2個以上的芳香環。該重複單元所具有的芳香環的個數通常較佳為5個以下,更佳為3個以下。 Further, from the viewpoint of the roughness performance, the repeating unit represented by the formula (A3) preferably contains two or more aromatic rings. The number of aromatic rings which the repeating unit has is usually preferably 5 or less, more preferably 3 or less.

另外,於由通式(A3)所表示的重複單元中,就粗糙度性能的觀點而言,AR更佳為含有2個以上的芳香環,進而佳為AR為萘基或聯苯基。AR所具有的芳香環的個數通常較佳為5個以下,更佳為3個以下。 Further, in the repeating unit represented by the general formula (A3), it is more preferable that the AR contains two or more aromatic rings from the viewpoint of the roughness performance, and further preferably, the AR is a naphthyl group or a biphenyl group. The number of aromatic rings which the AR has is usually preferably 5 or less, more preferably 3 or less.

如上所述,Rn表示烷基、環烷基或芳基。 As described above, Rn represents an alkyl group, a cycloalkyl group or an aryl group.

Rn的烷基可為直鏈烷基,亦可為分支鏈烷基。該烷基較佳可列舉:甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、己基、環己基、辛基及十二烷基等碳數1~20的基團。Rn的烷基較佳為碳數1~5的基團,更佳為碳數1~3的基團。 The alkyl group of Rn may be a linear alkyl group or a branched alkyl group. The alkyl group is preferably exemplified by methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, hexyl, cyclohexyl, octyl and dodecyl groups. A group having 1 to 20 carbon atoms. The alkyl group of Rn is preferably a group having 1 to 5 carbon atoms, more preferably a group having 1 to 3 carbon atoms.

Rn的環烷基例如可列舉環戊基及環己基等碳數3~15的基團。 Examples of the cycloalkyl group of Rn include a group having 3 to 15 carbon atoms such as a cyclopentyl group and a cyclohexyl group.

Rn的芳基例如較佳為苯基、二甲苯基、甲苯甲醯基、枯烯基、萘基及蒽基等碳數6~14的基團。 The aryl group of Rn is preferably a group having 6 to 14 carbon atoms such as a phenyl group, a xylyl group, a tolylmethyl group, a cumenyl group, a naphthyl group or a fluorenyl group.

作為Rn的烷基、環烷基及芳基分別可更具有取代基。該取代基例如可列舉:烷氧基、羥基、鹵素原子、硝基、醯基、醯氧基、醯基胺基、磺醯基胺基、二烷基胺基、烷硫基、芳硫基、芳烷硫基、噻吩羰氧基、噻吩甲基羰氧基及吡咯啶酮殘基等雜環殘基。其中,尤佳為烷氧基、羥基、鹵素原子、硝基、醯基、醯氧基、醯基胺基及磺醯基胺基。 The alkyl group, the cycloalkyl group and the aryl group as Rn may each have a substituent. Examples of the substituent include an alkoxy group, a hydroxyl group, a halogen atom, a nitro group, a decyl group, a decyloxy group, a decylamino group, a sulfonylamino group, a dialkylamino group, an alkylthio group, and an arylthio group. a heterocyclic residue such as an aralkylthio group, a thiophenecarbonyloxy group, a thiophenemethylcarbonyloxy group, and a pyrrolidone residue. Among them, an alkoxy group, a hydroxyl group, a halogen atom, a nitro group, a decyl group, a decyloxy group, a decylamino group, and a sulfonylamino group are particularly preferable.

如上所述,R表示氫原子、烷基、環烷基、鹵素原子、氰基或烷氧基羰基。 As described above, R represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.

R的烷基及環烷基例如可列舉與上文中關於Rn所說明的基團相同的基團。該些烷基及環烷基分別可具有取代基。該取代基例如可列舉與上文中關於Rn所說明的基團相同的基團。 The alkyl group and the cycloalkyl group of R may, for example, be the same groups as those described above for Rn. The alkyl group and the cycloalkyl group each may have a substituent. Examples of the substituent include the same groups as those described above for Rn.

於R為具有取代基的烷基或環烷基的情形時,尤佳的R例如可列舉:三氟甲基、烷氧基羰基甲基、烷基羰氧基甲基、羥 基甲基及烷氧基甲基。 In the case where R is an alkyl group or a cycloalkyl group having a substituent, preferred examples of R include a trifluoromethyl group, an alkoxycarbonylmethyl group, an alkylcarbonyloxymethyl group, and a hydroxy group. Methyl and alkoxymethyl.

R的鹵素原子可列舉氟原子、氯原子、溴原子及碘原子。其中,尤佳為氟原子。 The halogen atom of R may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom. Among them, a fluorine atom is particularly preferred.

R的烷氧基羰基所含的烷基部分例如可採用上文中作為R的烷基而列舉的構成。 The alkyl moiety contained in the alkoxycarbonyl group of R can be exemplified by the above-mentioned alkyl group as R.

Rn與AR較佳為相互鍵結而形成非芳香族環,藉此,尤其可進一步提高粗糙度性能。 Rn and AR are preferably bonded to each other to form a non-aromatic ring, whereby the roughness performance can be further improved.

Rn與AR可相互鍵結而形成的非芳香族環較佳為5員環~8員環,更佳為5員環或6員環。 The non-aromatic ring formed by bonding Rn and AR to each other is preferably a 5-membered ring to an 8-membered ring, more preferably a 5-membered ring or a 6-membered ring.

非芳香族環可為脂肪族環,亦可為含有氧原子、氮原子、硫原子等雜原子作為環員的雜環。 The non-aromatic ring may be an aliphatic ring or a hetero ring containing a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom as a ring member.

非芳香族環可具有取代基。該取代基例如可列舉與上文中關於Rn可具有的進一步的取代基所說明的基團相同的基團。 The non-aromatic ring may have a substituent. The substituent may, for example, be the same as the group described above with respect to the further substituent which Rn may have.

以下,列舉與由通式(A2)所表示的重複單元相對應的單體的具體例及該重複單元的具體例,但不限定於該些具體例。 Specific examples of the monomer corresponding to the repeating unit represented by the general formula (A2) and specific examples of the repeating unit are listed below, but are not limited to the specific examples.

[化95] [化95]

[化96] [化96]

[化97] [化97]

以下列舉由通式(A3)所表示的重複單元的結構的具體例,但不限定於該些具體例。 Specific examples of the structure of the repeating unit represented by the general formula (A3) are listed below, but are not limited to these specific examples.

[化101] [化101]

其中,更佳為下述所示的重複單元。 Among them, the repeating unit shown below is more preferable.

由通式(A2)所表示的重複單元於一形態中,較佳為甲 基丙烯酸第三丁酯或甲基丙烯酸乙基環戊酯的重複單元。 The repeating unit represented by the general formula (A2) is in a form, preferably a A repeating unit of a third butyl acrylate or ethyl cyclopentyl methacrylate.

與通式(A2)所表示的重複單元相對應的單體可藉由以下方式合成:於四氫呋喃(Tetrahydrofuran,THF)、丙酮、二氯甲烷等溶劑中,使(甲基)丙烯醯氯與醇化合物於三乙胺、吡啶、1,8-二氮雜雙環[5.4.0]十一碳-7-烯(1,8-Diazabicyclo[5.4.0]undec-7-ene,DBU)等鹼性觸媒的存在下進行酯化。再者,亦可使用市售品。 The monomer corresponding to the repeating unit represented by the formula (A2) can be synthesized by reacting (meth)acryloyl chloride with an alcohol in a solvent such as tetrahydrofuran (THF), acetone or dichloromethane. The compound is basic in triethylamine, pyridine, 1,8-diazabicyclo[5.4.0]undec-7-ene (1,8-Diazabicyclo[5.4.0]undec-7-ene, DBU) Esterification is carried out in the presence of a catalyst. Further, a commercially available product can also be used.

樹脂(Ab)亦可更含有下述通式(A5)所表示的重複單元。 The resin (Ab) may further contain a repeating unit represented by the following formula (A5).

式(A5)中,X表示氫原子、烷基、羥基、烷氧基、鹵素原子、氰基、硝基、醯基、醯氧基、環烷基、芳基、羧基、烷氧基羰基、烷基羰氧基或芳烷基,與通式(A2b)中的X相同。 In the formula (A5), X represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a decyl group, a decyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkoxycarbonyl group, The alkylcarbonyloxy group or the aralkyl group is the same as X in the formula (A2b).

A4表示不因酸的作用脫離的烴基。 A 4 represents a hydrocarbon group which is not desorbed by the action of an acid.

通式(A5)中的A4的不因酸的作用脫離的烴基可列舉上述酸分解性基以外的烴基,例如可列舉:不因酸的作用脫離的烷基(較佳為碳數1~15)、不因酸的作用脫離的環烷基(較佳為 碳數3~15)、不因酸的作用脫離的芳基(較佳為碳數6~15)等。 The hydrocarbon group which is not decomposed by the action of the acid in the A 4 of the formula (A5) is a hydrocarbon group other than the acid-decomposable group, and examples thereof include an alkyl group which is not desorbed by the action of an acid (preferably, a carbon number of 1 to 2). 15) A cycloalkyl group (preferably having a carbon number of 3 to 15) which is not desorbed by the action of an acid, or an aryl group which is not desorbed by the action of an acid (preferably, a carbon number of 6 to 15).

A4的不因酸的作用脫離的烴基可進一步經羥基、烷基、環烷基、芳基等所取代。 The hydrocarbon group of A 4 which is not desorbed by the action of an acid may be further substituted with a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or the like.

樹脂(Ab)亦較佳為更含有通式(A6)所表示的重複單元。 The resin (Ab) is also preferably further contained in the repeating unit represented by the formula (A6).

通式(A6)中,R2表示氫原子、甲基、氰基、鹵素原子或碳數1~4的全氟基。 In the formula (A6), R 2 represents a hydrogen atom, a methyl group, a cyano group, a halogen atom or a perfluoro group having 1 to 4 carbon atoms.

R3表示氫原子、烷基、環烷基、鹵素原子、芳基、烷氧基或醯基。 R 3 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, an aryl group, an alkoxy group or a fluorenyl group.

q表示0~4的整數。 q represents an integer from 0 to 4.

Ar表示q+2價的芳香環。 Ar represents an aromatic ring of q+2 valence.

W表示不因酸的作用分解的基團或氫原子。 W represents a group or a hydrogen atom which is not decomposed by the action of an acid.

由Ar所表示的芳香環較佳為苯環、萘環、蒽環,更佳為苯環。 The aromatic ring represented by Ar is preferably a benzene ring, a naphthalene ring or an anthracene ring, and more preferably a benzene ring.

W表示不因酸的作用分解的基團(亦稱為酸穩定基),可列舉上述酸分解性基以外的基團,具體可列舉:鹵素原子、烷 基、環烷基、烯基、芳基、醯基、烷基醯胺基、芳基醯胺甲基、芳基醯胺基等。酸穩定基較佳為醯基、烷基醯胺基,更佳為醯基、烷基羰氧基、烷基氧基、環烷基氧基、芳氧基。 W is a group which is not decomposed by the action of an acid (also referred to as an acid-stable group), and examples thereof include a group other than the acid-decomposable group, and specific examples thereof include a halogen atom and an alkane. A group, a cycloalkyl group, an alkenyl group, an aryl group, a decyl group, an alkyl guanylamino group, an aryl decylamino group, an aryl decylamino group or the like. The acid stabilizing group is preferably a mercapto group or an alkyl mercaptoamine group, more preferably an anthracenyl group, an alkylcarbonyloxy group, an alkyloxy group, a cycloalkyloxy group or an aryloxy group.

W的酸穩定基中,烷基較佳為甲基、乙基、丙基、正丁基、第二丁基、第三丁基般的碳數1個~4個的基團,環烷基較佳為環丙基、環丁基、環己基、金剛烷基般的碳數3個~10個的基團,烯基較佳為乙烯基、丙烯基、烯丙基、丁烯基般的碳數2個~4個的基團,烯基較佳為乙烯基、丙烯基、烯丙基、丁烯基般的碳數2個~4個的基團,芳基較佳為苯基、二甲苯基、甲苯甲醯基、枯烯基、萘基、蒽基般的碳數6個~14個的基團。W可位於苯環上的任意位置,較佳為苯乙烯骨架的間位或對位,尤佳為對位。 In the acid stabilizing group of W, the alkyl group is preferably a methyl group, an ethyl group, a propyl group, a n-butyl group, a second butyl group or a t-butyl group having a carbon number of 1 to 4 groups, and a cycloalkyl group. Preferably, it is a cyclopropyl group, a cyclobutyl group, a cyclohexyl group or an adamantyl group having 3 to 10 carbon atoms, and the alkenyl group is preferably a vinyl group, a propenyl group, an allyl group or a butenyl group. The group having 2 to 4 carbon atoms, the alkenyl group is preferably a group having 2 to 4 carbon atoms such as a vinyl group, a propenyl group, an allyl group or a butenyl group, and the aryl group is preferably a phenyl group. A group having 6 to 14 carbon atoms such as xylyl, tolylmethyl, cumenyl, naphthyl or anthracenyl. W may be located at any position on the benzene ring, preferably in the meta or para position of the styrene skeleton, and more preferably in the para position.

以下列舉通式(A6)所表示的重複單元的具體例,但不限定於該些具體例。 Specific examples of the repeating unit represented by the formula (A6) are listed below, but are not limited to these specific examples.

[化110] [110]

[化112] [化112]

樹脂(Ab)亦較佳為更含有不因酸的作用分解的包含(甲基)丙烯酸衍生物的重複單元。以下列舉具體例,但不限定於此。 The resin (Ab) is also preferably a repeating unit containing a (meth)acrylic acid derivative which is not decomposed by the action of an acid. Specific examples are listed below, but are not limited thereto.

[化113] [化113]

於所有重複單元中,樹脂(Ab)中的具有酸分解性基的重複單元的含有率較佳為5mol%~95mol%,更佳為10mol%~60mol%,尤佳為15mol%~50mol%。 In all the repeating units, the content of the repeating unit having an acid-decomposable group in the resin (Ab) is preferably from 5 mol% to 95 mol%, more preferably from 10 mol% to 60 mol%, still more preferably from 15 mol% to 50 mol%.

於所有重複單元中,樹脂(Ab)中的通式(A1)所表示的重複單元的含有率較佳為0mol%~90mol%,更佳為10mol%~70mol%,尤佳為20mol%~50mol%。 In all the repeating units, the content of the repeating unit represented by the formula (A1) in the resin (Ab) is preferably from 0 mol% to 90 mol%, more preferably from 10 mol% to 70 mol%, still more preferably from 20 mol% to 50 mol%. %.

於所有重複單元中,樹脂(Ab)中的通式(A2)所表示的重複單元的含有率較佳為0mol%~90mol%,更佳為5mol%~75mol%,尤佳為10mol%~60mol%。 In all the repeating units, the content of the repeating unit represented by the formula (A2) in the resin (Ab) is preferably from 0 mol% to 90 mol%, more preferably from 5 mol% to 75 mol%, still more preferably from 10 mol% to 60 mol%. %.

於所有重複單元中,樹脂(Ab)中的通式(A3)所表示的重複單元的含有率較佳為0mol%~90mol%,更佳為5mol%~75mol%,尤佳為10mol%~60mol%。 In all the repeating units, the content of the repeating unit represented by the formula (A3) in the resin (Ab) is preferably from 0 mol% to 90 mol%, more preferably from 5 mol% to 75 mol%, still more preferably from 10 mol% to 60 mol%. %.

於所有重複單元中,樹脂(Ab)中的通式(A5)所表示的重複單元的含有率較佳為0mol%~50mol%,更佳為0mol%~40mol%,尤佳為0mol%~30mol%。 In all the repeating units, the content of the repeating unit represented by the formula (A5) in the resin (Ab) is preferably from 0 mol% to 50 mol%, more preferably from 0 mol% to 40 mol%, particularly preferably from 0 mol% to 30 mol. %.

樹脂(Ab)亦可更含有通式(A6)所表示的重複單元,就提高膜質、抑制未曝光部的膜薄化等觀點而言較佳。於所有重複單元中,通式(A5)所表示的重複單元的含有率較佳為0mol%~50mol%,更佳為0mol%~40mol%,尤佳為0mol%~30mol%。 The resin (Ab) may further contain a repeating unit represented by the formula (A6), and is preferable from the viewpoint of improving the film quality and suppressing film thinning in the unexposed portion. The content of the repeating unit represented by the formula (A5) in all the repeating units is preferably from 0 mol% to 50 mol%, more preferably from 0 mol% to 40 mol%, still more preferably from 0 mol% to 30 mol%.

另外,樹脂(Ab)中,為了維持對鹼性顯影液的良好的顯影性,亦能以可導入鹼可溶性基、例如酚性羥基、羧基的方式使適當的其他聚合性單體進行共聚合,為了提高膜質,亦可使丙烯酸烷基酯或甲基丙烯酸烷基酯般的疏水性的其他聚合性單體進行共聚合。 Further, in the resin (Ab), in order to maintain good developability to the alkaline developing solution, it is also possible to copolymerize an appropriate other polymerizable monomer so as to introduce an alkali-soluble group, for example, a phenolic hydroxyl group or a carboxyl group. In order to improve the film quality, other polymerizable monomers having a hydrophobicity such as an alkyl acrylate or an alkyl methacrylate may be copolymerized.

與通式(A2)所表示的重複單元相對應的單體可藉由以下方式合成:於THF、丙酮、二氯甲烷等溶劑中,使(甲基)丙烯醯氯與醇化合物於三乙胺、吡啶、DBU等鹼性觸媒的存在下進行酯化。再者,亦可使用市售品。 The monomer corresponding to the repeating unit represented by the formula (A2) can be synthesized by reacting (meth)acryloyl chloride with an alcohol compound in triethylamine in a solvent such as THF, acetone or dichloromethane. Esterification is carried out in the presence of an alkaline catalyst such as pyridine or DBU. Further, a commercially available product can also be used.

與通式(A1)所表示的重複單元相對應的單體可藉由以下方式合成:於THF、二氯甲烷等溶劑中,使羥基取代苯乙烯單體與乙烯醚化合物於對甲苯磺酸、對甲苯磺酸吡啶鹽等酸性觸媒 的存在下進行縮醛化;或使用二碳酸第三丁酯,於三乙胺、吡啶、DBU等鹼性觸媒的存在下進行第三丁氧羰基(t-Butyloxycarbonyl,t-Boc)保護。再者,亦可使用市售品。 The monomer corresponding to the repeating unit represented by the formula (A1) can be synthesized by subjecting a hydroxy group-substituted styrene monomer to a vinyl ether compound to p-toluenesulfonic acid in a solvent such as THF or dichloromethane. Acidic catalyst such as p-toluenesulfonic acid pyridinium salt The acetalization is carried out in the presence of acetal; or the third butanoxycarbonyl (t-Boc) protection is carried out in the presence of a basic catalyst such as triethylamine, pyridine or DBU using tert-butyl dicarbonate. Further, a commercially available product can also be used.

樹脂(Ab)的重量平均分子量(Mw)分別較佳為1000~200,000的範圍。就樹脂自身對鹼的溶解速度、感度的方面而言,較佳為200,000以下。分散度(Mw/Mn)較佳為1.0~3.0,更佳為1.0~2.5,尤佳為1.0~2.0。 The weight average molecular weight (Mw) of the resin (Ab) is preferably in the range of 1,000 to 200,000, respectively. It is preferably 200,000 or less in terms of the dissolution rate and sensitivity of the resin itself to the alkali. The degree of dispersion (Mw/Mn) is preferably from 1.0 to 3.0, more preferably from 1.0 to 2.5, and still more preferably from 1.0 to 2.0.

其中,樹脂的重量平均分子量(Mw)較佳為1,000~200,000的範圍,更佳為1,000~100,000的範圍,尤佳為1,000~50,000的範圍,最佳為1,000~25,000的範圍。 The weight average molecular weight (Mw) of the resin is preferably in the range of 1,000 to 200,000, more preferably in the range of 1,000 to 100,000, particularly preferably in the range of 1,000 to 50,000, and most preferably in the range of 1,000 to 25,000.

此處,重量平均分子量是以凝膠滲透層析法(Gel Permeation Chromatography)的聚苯乙烯換算值來定義。詳細而言,樹脂(Ab)的重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由以下方式求出:使用HLC-8120(東曹(股)製造),使用TSK gel Multipore HXL-M(東曹(股)製造,7.8mm ID×30.0cm)作為管柱,使用THF(四氫呋喃)作為溶離液。 Here, the weight average molecular weight is defined by a polystyrene equivalent value of Gel Permeation Chromatography. Specifically, the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the resin (Ab) can be obtained, for example, by using HLC-8120 (manufactured by Tosoh Corporation) and using TSK gel Multipore HXL- M (manufactured by Tosoh Corporation, 7.8 mm ID × 30.0 cm) was used as a column, and THF (tetrahydrofuran) was used as a solution.

(Ab)可利用各種市售品,亦可依照常法(例如自由基聚合或陰離子聚合法)來合成。例如,通常的合成方法可列舉:使單體種及起始劑溶解於溶劑中,進行加熱,藉此進行聚合的總括聚合法;於加熱溶劑中用1小時~10小時滴加單體種與起始劑的溶液的滴加聚合法等,較佳為滴加聚合法。反應溶劑例如可列舉:四氫呋喃、1,4-二噁烷、二異丙醚等醚類或甲基乙基酮、甲基 異丁基酮般的酮類,乙酸乙酯般的酯溶劑,二甲基甲醯胺、二甲基乙醯胺等醯胺溶劑,進而後述的丙二醇單甲醚乙酸酯(PGMEA(Propyleneglycol Monomethylether Acetate),別名1-甲氧基-2-乙醯氧基丙烷)、丙二醇單甲醚(PGME(Propyleneglycol Monomethylether),別名1-甲氧基-2-丙醇)、環己酮般的溶解本發明的組成物的溶劑。更佳為以使用與本發明的感光化射線性或感放射線性樹脂組成物中所用的溶劑相同的溶劑來進行聚合為宜。藉此可抑制保存時的顆粒的產生。 (Ab) Various commercially available products can be used, and they can also be synthesized according to a usual method (for example, a radical polymerization or an anionic polymerization method). For example, a general synthesis method may be a method in which a monomer type and a starter are dissolved in a solvent and heated to carry out polymerization, and a monomer polymerization method is carried out in a heating solvent for 1 hour to 10 hours. The dropwise addition polymerization method of the solution of the initiator is preferably a dropping polymerization method. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether, or methyl ethyl ketone and methyl group. Isobutyl ketone-like ketones, ethyl acetate-like ester solvents, guanamine solvents such as dimethylformamide and dimethylacetamide, and further propylene glycol monomethyl ether acetate (PGMEA (Propyleneglycol Monomethylether) Acetate), alias 1-methoxy-2-ethoxypropane), PGME (Propyleneglycol Monomethylether, alias 1-methoxy-2-propanol), cyclohexanone-like dissolution A solvent for the composition of the invention. More preferably, the polymerization is carried out by using the same solvent as that used in the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention. Thereby, generation of particles at the time of storage can be suppressed.

樹脂(Ab)較佳為利用公知的陰離子聚合法或自由基聚合法等來進行聚合。 The resin (Ab) is preferably polymerized by a known anionic polymerization method or a radical polymerization method.

陰離子聚合法是如下般進行:將鹼金屬或有機鹼金屬作為聚合起始劑,通常於氮氣、氬氣等惰性氣體環境下,於有機溶劑中於-100℃~90℃的溫度下進行陰離子聚合。而且,於共聚合中,藉由將單體類依序添加至反應系中進行聚合,可獲得嵌段共聚物,另外,藉由將各單體類的混合物添加至反應系中進行聚合,可獲得無規共聚物。 The anionic polymerization method is carried out by using an alkali metal or an organic alkali metal as a polymerization initiator, and anion polymerization is carried out in an organic solvent at a temperature of from -100 ° C to 90 ° C in an inert gas atmosphere such as nitrogen or argon. . Further, in the copolymerization, a block copolymer can be obtained by sequentially adding a monomer to the reaction system to carry out polymerization, and further, by adding a mixture of the respective monomers to the reaction system for polymerization, A random copolymer is obtained.

上述聚合起始劑的鹼金屬可列舉鋰、鈉、鉀、銫等,有機鹼金屬可使用上述鹼金屬的烷基化物、烯丙基化物及芳基化物,具體可列舉:乙基鋰、正丁基鋰、第二丁基鋰、第三丁基鋰、乙基鈉、聯苯基鋰、萘鋰、三苯基鋰、萘鈉、α-甲基苯乙烯鈉二陰離子、1,1-二苯基己基鋰、1,1-二苯基-3-甲基戊基鋰等。 The alkali metal of the polymerization initiator may, for example, be lithium, sodium, potassium or rubidium. The organic alkali metal may be an alkylate, an allyl compound or an aryl compound of the above alkali metal, and specific examples thereof include ethyl lithium and Butyl lithium, second butyl lithium, tert-butyl lithium, ethyl sodium, biphenyl lithium, lithium naphthalene, triphenyl lithium, sodium naphthalene, sodium α-methylstyrene dianion, 1,1- Diphenylhexyllithium, 1,1-diphenyl-3-methylpentyllithium, and the like.

自由基聚合法是如下般進行:使用偶氮雙異丁腈、偶氮 雙異戊腈等偶氮化合物或過氧化苯甲醯、過氧化甲基乙基酮、枯烯氫過氧化物等有機過氧化物般的公知的自由基聚合起始劑,視需要併用1-十二烷硫醇等公知的鏈轉移劑,於氮氣、氬氣等惰性氣體環境下,於有機溶劑中於50℃~200℃的溫度下進行自由基聚合。 The radical polymerization method is carried out as follows: using azobisisobutyronitrile, azo a known radical polymerization initiator such as an azo compound such as bis-isovaleronitrile or an organic peroxide such as benzamidine peroxide, methyl ethyl ketone peroxide or cumene hydroperoxide, if necessary, 1- A known chain transfer agent such as dodecanethiol is subjected to radical polymerization in an organic solvent at a temperature of from 50 ° C to 200 ° C under an inert gas atmosphere such as nitrogen or argon.

有機溶劑可列舉:正己烷、正庚烷等脂肪族烴類,環己烷、環戊烷等脂環族烴類,苯、甲苯等芳香族烴類,甲基乙基酮、環己酮等酮類,丙二醇單甲醚乙酸酯、丙二醇單甲醚、乙二醇單丁醚乙酸酯、乙二醇單丁醚、乙二醇單乙醚乙酸酯、乙二醇單乙醚、丙二醇單乙醚乙酸酯、丙二醇單乙醚等多元醇衍生物類,二乙醚、四氫呋喃、二噁烷等醚類,苯甲醚,六甲基磷醯胺等通常陰離子聚合中使用的有機溶劑,該些溶劑是以單獨一種溶劑或兩種以上的混合溶劑的形式使用。更佳的溶劑可列舉丙二醇單甲醚乙酸酯、丙二醇單甲醚、環己酮。 Examples of the organic solvent include aliphatic hydrocarbons such as n-hexane and n-heptane, alicyclic hydrocarbons such as cyclohexane and cyclopentane, aromatic hydrocarbons such as benzene and toluene, and methyl ethyl ketone and cyclohexanone. Ketones, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethylene glycol monobutyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monoethyl ether, propylene glycol single a polyol derivative such as diethyl ether acetate or propylene glycol monoethyl ether; an ether such as diethyl ether, tetrahydrofuran or dioxane; an organic solvent used in usual anionic polymerization such as anisole or hexamethylphosphonium. It is used in the form of a single solvent or a mixture of two or more. More preferable solvents include propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone.

自由基起始劑較佳為偶氮系起始劑,較佳為具有酯基、氰基、羧基的偶氮系起始劑。較佳的起始劑可列舉偶氮雙異丁腈、偶氮雙-二甲基戊腈、二甲基2,2'-偶氮雙(2-甲基丙酸酯)等。反應的濃度通常為5質量%~50質量%,較佳為30質量%~50質量%。反應溫度通常為10℃~150℃,較佳為30℃~120℃,更佳為60℃~100℃。藉由使用偶氮系聚合起始劑進行自由基聚合,可合成分散度2.0以下的樹脂(Ab)。更佳的分散度為1.0~1.5的樹脂(Ab)例如可藉由活性自由基聚合來合成。 The radical initiator is preferably an azo initiator, and is preferably an azo initiator having an ester group, a cyano group or a carboxyl group. Preferred examples of the initiator include azobisisobutyronitrile, azobis-dimethylvaleronitrile, dimethyl 2,2'-azobis(2-methylpropionate), and the like. The concentration of the reaction is usually 5% by mass to 50% by mass, preferably 30% by mass to 50% by mass. The reaction temperature is usually from 10 ° C to 150 ° C, preferably from 30 ° C to 120 ° C, more preferably from 60 ° C to 100 ° C. The resin (Ab) having a degree of dispersion of 2.0 or less can be synthesized by radical polymerization using an azo polymerization initiator. A more preferred resin (Ab) having a degree of dispersion of 1.0 to 1.5 can be synthesized, for example, by living radical polymerization.

反應結束後,放置冷卻至室溫為止,進行純化。純化可應用以下方法等通常的方法:藉由組合水洗或適當的溶劑來去除殘留單體或低聚物成分的液液萃取法,僅將特定的分子量以下者加以萃取去除的超濾等溶液狀態下的純化方法;或藉由將樹脂溶液滴加至不良溶劑中而使樹脂於不良溶劑中凝固,藉此去除殘留單體等的再沈澱法或利用不良溶劑來清洗經過濾分離的樹脂漿料等固體狀態下的純化方法等。例如,使上述樹脂難溶或不溶的溶劑(不良溶劑)以該反應溶液的10倍以下的體積量、較佳為10倍~5倍的體積量與該樹脂接觸,藉此使樹脂以固體的形式析出。 After completion of the reaction, the mixture was allowed to cool to room temperature and purified. For the purification, a usual method such as the following method: a liquid-liquid extraction method in which residual monomers or oligomer components are removed by washing with water or a suitable solvent, and a solution state such as ultrafiltration which is extracted by removing only a specific molecular weight or less is used. a purification method; or a reprecipitation method in which a resin is solidified in a poor solvent by dropping a resin solution into a poor solvent, thereby removing residual monomers or the like, or cleaning a resin slurry separated by filtration using a poor solvent A purification method or the like in a solid state. For example, a solvent (poor solvent) in which the resin is poorly soluble or insoluble is brought into contact with the resin in a volume of 10 times or less, preferably 10 times to 5 times the volume of the reaction solution, whereby the resin is solid. Forms are precipitated.

自聚合物溶液的沈澱或再沈澱操作時所用的溶劑(沈澱或再沈澱溶劑)只要為該聚合物的不良溶劑即可,可根據聚合物的種類而自烴、鹵化烴、硝基化合物、醚、酮、酯、碳酸酯、醇、羧酸、水、含有該些溶劑的混合溶劑等中適當選擇使用。該些溶劑中,沈澱或再沈澱溶劑較佳為至少含有醇(特別是甲醇等)或水的溶劑。 The solvent (precipitation or reprecipitation solvent) used in the precipitation or reprecipitation operation of the polymer solution may be a poor solvent of the polymer, and may be derived from a hydrocarbon, a halogenated hydrocarbon, a nitro compound, or an ether depending on the kind of the polymer. A ketone, an ester, a carbonate, an alcohol, a carboxylic acid, water, a mixed solvent containing these solvents, and the like are appropriately selected and used. Among these solvents, the precipitating or reprecipitation solvent is preferably a solvent containing at least an alcohol (particularly methanol or the like) or water.

沈澱或再沈澱溶劑的使用量可考慮效率或產率等而適當選擇,通常相對於聚合物溶液100質量份而為100質量份~10000質量份,較佳為200質量份~2000質量份,進而佳為300質量份~1000質量份。 The amount of the precipitating or reprecipitation solvent to be used may be appropriately selected in consideration of efficiency, productivity, etc., and is usually 100 parts by mass to 10,000 parts by mass, preferably 200 parts by mass to 2000 parts by mass, based on 100 parts by mass of the polymer solution. It is preferably 300 parts by mass to 1000 parts by mass.

沈澱或再沈澱時的溫度可考慮效率或操作性而適當選擇,通常為0℃~50℃左右,較佳為室溫附近(例如20℃~35℃左右)。沈澱或再沈澱操作是使用攪拌槽等慣用的混合容器,藉由 批次式、連續式等的公知的方法來進行。 The temperature at the time of precipitation or reprecipitation can be appropriately selected in consideration of efficiency or workability, and is usually about 0 ° C to 50 ° C, preferably near room temperature (for example, about 20 ° C to 35 ° C). The precipitation or reprecipitation operation is a conventional mixing vessel using a stirring tank, etc. A known method such as batch type or continuous type is carried out.

經沈澱或再沈澱的聚合物通常是進行過濾、離心分離等慣用的固液分離,並加以乾燥而供使用。過濾是使用耐溶劑性的濾材較佳為於加壓下進行。乾燥是於常壓或減壓下(較佳為減壓下)於30℃~100℃左右、較佳為30℃~50℃左右的溫度下進行。 The precipitated or reprecipitated polymer is usually subjected to conventional solid-liquid separation such as filtration, centrifugation, and the like, and dried for use. Filtration is preferably carried out under pressure using a solvent resistant filter material. The drying is carried out at a temperature of from about 30 ° C to 100 ° C, preferably from about 30 ° C to 50 ° C under normal pressure or reduced pressure (preferably under reduced pressure).

再者,亦可暫且使樹脂析出並加以分離後,再次溶解於溶劑中,與該樹脂難溶或不溶的溶劑接觸。即,亦可為包括以下步驟的方法:於上述自由基聚合反應結束後,使該聚合物難溶或不溶的溶劑與該聚合物接觸,使樹脂析出(步驟a);將樹脂自溶液中分離(步驟b);重新溶解於溶劑中而製備樹脂溶液A(步驟c);其後,使該樹脂難溶或不溶的溶劑以樹脂溶液A的小於10倍的體積量(較佳為5倍以下的體積量)與該樹脂溶液A接觸,藉此使樹脂固體析出(步驟d);及將析出的樹脂分離(步驟e)。 Further, the resin may be temporarily precipitated and separated, and then dissolved again in a solvent to be in contact with a solvent in which the resin is poorly soluble or insoluble. That is, it may be a method comprising the steps of: after the completion of the radical polymerization reaction, contacting a solvent in which the polymer is poorly soluble or insoluble with the polymer to precipitate a resin (step a); separating the resin from the solution (Step b); re-dissolving in a solvent to prepare a resin solution A (step c); thereafter, making the resin insoluble or insoluble solvent less than 10 times the volume of the resin solution A (preferably 5 times or less) The volume of the resin is contacted with the resin solution A, thereby precipitating the resin solid (step d); and separating the precipitated resin (step e).

另外,於利用ArF準分子雷射對本發明的正型抗蝕劑進行曝光時,就對ArF準分子雷射的透明性的觀點而言,較佳為使用不具有芳香環的樹脂作為樹脂(Ab)。適於ArF準分子雷射曝光的樹脂(Ab)例如可使用日本專利特開2013-15590號公報的段落0446~段落0477中記載的樹脂(A‘)。 Further, when the positive resist of the present invention is exposed by an ArF excimer laser, from the viewpoint of transparency to an ArF excimer laser, it is preferred to use a resin having no aromatic ring as a resin (Ab ). For the resin (Ab) suitable for the ArF excimer laser exposure, for example, the resin (A') described in paragraphs 0446 to 0477 of JP-A-2013-15590 can be used.

樹脂(Ab)亦可組合使用兩種以上。 The resin (Ab) may be used in combination of two or more kinds.

相對於本發明的組成物的總固體成分,樹脂(Ab)的添加量以總量計而通常為10質量%~99質量%,較佳為20質量%~99質量%,尤佳為30質量%~99質量%。 The amount of the resin (Ab) to be added is usually 10% by mass to 99% by mass, preferably 20% by mass to 99% by mass, and particularly preferably 30% by mass based on the total solid content of the composition of the present invention. %~99% by mass.

以下,將樹脂(Ab)的具體例示於以下,但不限定於該些具體例。 Hereinafter, specific examples of the resin (Ab) are shown below, but are not limited to these specific examples.

[化115] [化115]

[化116] [116]

[化118] [化118]

[化119] [化119]

[化121] [化121]

[化122] [化122]

[化123] [化123]

[化124] [化124]

[化125] [化125]

[化127] [化127]

[化128] [化128]

[化129] [化129]

[化130] [化130]

[化131] [化131]

[化132] [化132]

[化133] [化133]

[化134] [化134]

於樹脂(Ab)不含產生酸的重複單元(B)的情形時,含有氟原子的重複單元的含有率較佳為1mol%以下,更佳為不含氟原子。於樹脂(Ab)含有重複單元(B)的情形時,進而佳為重 複單元(B)以外的且含有氟原子的重複單元的含有率為1mol%以下,最佳為不含氟原子。 When the resin (Ab) does not contain the repeating unit (B) which generates an acid, the content of the repeating unit containing a fluorine atom is preferably 1 mol% or less, and more preferably no fluorine atom. In the case where the resin (Ab) contains the repeating unit (B), it is further preferred The content of the repeating unit other than the complex unit (B) and containing a fluorine atom is 1 mol% or less, and most preferably no fluorine atom.

[3]藉由光化射線或放射線的照射而產生酸的化合物 [3] Compounds which generate acid by irradiation with actinic rays or radiation

本發明的組成物含有藉由光化射線或放射線的照射而產生酸的化合物(以下亦稱為「酸產生劑」)。 The composition of the present invention contains a compound which generates an acid by irradiation with actinic rays or radiation (hereinafter also referred to as "acid generator").

酸產生劑只要為公知者,則並無特別限定,較佳為藉由光化射線或放射線的照射而產生有機酸、例如磺酸、雙(烷基磺醯基)醯亞胺或三(烷基磺醯基)甲基化物的至少任一個的化合物。 The acid generator is not particularly limited as long as it is known, and it is preferred to generate an organic acid such as sulfonic acid, bis(alkylsulfonyl) ruthenium or tri(alkane) by irradiation with actinic rays or radiation. A compound of at least one of a sulfonyl group) methide.

更佳可列舉下述通式(ZI)、通式(ZII)、通式(ZIII)所表示的化合物。 More preferably, it is a compound represented by the following general formula (ZI), general formula (ZII), and general formula (ZIII).

上述通式(ZI)中,R201、R202及R203分別獨立地表示有機基。 In the above formula (ZI), R 201 , R 202 and R 203 each independently represent an organic group.

作為R201、R202及R203的有機基的碳數通常為1~30,較佳為1~20。 The organic group as R 201 , R 202 and R 203 has a carbon number of usually 1 to 30, preferably 1 to 20.

另外,R201~R203中的2個亦可鍵結而形成環結構,亦可於環內含有氧原子、硫原子、酯鍵、醯胺鍵、羰基。R201~R203中的2 個鍵結而形成的基團可列舉伸烷基(例如伸丁基、伸戊基)。 Further, two of R 201 to R 203 may be bonded to form a ring structure, and may contain an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbonyl group in the ring. The group formed by bonding two of R 201 to R 203 may, for example, be an alkyl group (e.g., a butyl group or a pentyl group).

Z-表示非親核性陰離子(引起親核反應的能力明顯低的陰離子)。 Z - represents a non-nucleophilic anion (an anion having a significantly lower ability to cause a nucleophilic reaction).

非親核性陰離子例如可列舉:磺酸根陰離子(脂肪族磺酸根陰離子、芳香族磺酸根陰離子、樟腦磺酸根陰離子等)、羧酸根陰離子(脂肪族羧酸根陰離子、芳香族羧酸根陰離子、芳烷基羧酸根陰離子等)、磺醯基醯亞胺陰離子、雙(烷基磺醯基)醯亞胺陰離子、三(烷基磺醯基)甲基化物陰離子等。 Examples of the non-nucleophilic anion include a sulfonate anion (an aliphatic sulfonate anion, an aromatic sulfonate anion, a camphor sulfonate anion, etc.), a carboxylate anion (an aliphatic carboxylate anion, an aromatic carboxylate anion, and an aralkyl group). a carboxylate anion or the like), a sulfonyl quinone imine anion, a bis(alkylsulfonyl) quinone imine anion, a tris(alkylsulfonyl) methide anion, and the like.

脂肪族磺酸根陰離子及脂肪族羧酸根陰離子中的脂肪族部位可為烷基亦可為環烷基,較佳可列舉碳數1~30的直鏈或分支的烷基及碳數3~30的環烷基。 The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group, preferably a linear or branched alkyl group having 1 to 30 carbon atoms and a carbon number of 3 to 30. Cycloalkyl.

芳香族磺酸根陰離子及芳香族羧酸根陰離子中的芳香族基較佳可列舉碳數6~14的芳基,例如苯基、甲苯基、萘基等。 The aromatic group in the aromatic sulfonate anion and the aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, for example, a phenyl group, a tolyl group or a naphthyl group.

上述所列舉的烷基、環烷基及芳基可具有取代基。該具體例可列舉:硝基、氟原子等鹵素原子、羧基、羥基、胺基、氰基、烷氧基(較佳為碳數1~15)、環烷基(較佳為碳數3~15)、芳基(較佳為碳數6~14)、烷氧基羰基(較佳為碳數2~7)、醯基(較佳為碳數2~12)、烷氧基羰氧基(較佳為碳數2~7)、烷硫基(較佳為碳數1~15)、烷基磺醯基(較佳為碳數1~15)、烷基亞胺基磺醯基(較佳為碳數2~15)、芳氧基磺醯基(較佳為碳數6~20)、烷基芳氧基磺醯基(較佳為碳數7~20)、環烷基芳氧基磺醯基(較佳為碳數10~20)、烷基氧基烷基氧基(較佳為碳數 5~20)、環烷基烷基氧基烷基氧基(較佳為碳數8~20)等。關於各基團所具有的芳基及環結構,可進一步列舉烷基(較佳為碳數1~15)作為取代基。 The alkyl group, the cycloalkyl group and the aryl group exemplified above may have a substituent. Specific examples thereof include a halogen atom such as a nitro group or a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), and a cycloalkyl group (preferably a carbon number of 3~). 15) an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), a mercapto group (preferably having a carbon number of 2 to 12), and an alkoxycarbonyloxy group. (preferably having a carbon number of 2 to 7), an alkylthio group (preferably having a carbon number of 1 to 15), an alkylsulfonyl group (preferably having a carbon number of 1 to 15), and an alkylimidosulfonyl group ( Preferably, the carbon number is 2 to 15), the aryloxysulfonyl group (preferably having a carbon number of 6 to 20), the alkylaryloxysulfonyl group (preferably having a carbon number of 7 to 20), and a cycloalkyl group. Oxysulfonyl (preferably from 10 to 20 carbon atoms), alkyloxyalkyloxy group (preferably carbon number) 5 to 20), a cycloalkylalkyloxyalkyloxy group (preferably having a carbon number of 8 to 20), and the like. Further, as the aryl group and the ring structure of each group, an alkyl group (preferably having a carbon number of 1 to 15) may be mentioned as a substituent.

芳烷基羧酸根陰離子中的芳烷基較佳可列舉碳數7~12的芳烷基,例如苄基、苯乙基、萘基甲基、萘基乙基、萘基丁基等。 The aralkyl group in the aralkylcarboxylate anion is preferably an aralkyl group having 7 to 12 carbon atoms, such as a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group or a naphthylbutyl group.

磺醯基醯亞胺陰離子例如可列舉糖精(saccharin)陰離子。 Examples of the sulfonyl quinone imine anion include a saccharin anion.

雙(烷基磺醯基)醯亞胺陰離子、三(烷基磺醯基)甲基化物陰離子中的烷基較佳為碳數1~5的烷基。該些烷基的取代基可列舉鹵素原子、經鹵素原子取代的烷基、烷氧基、烷硫基、烷氧基磺醯基、芳氧基磺醯基、環烷基芳氧基磺醯基等,較佳為氟原子或經氟原子取代的烷基。 The alkyl group in the bis(alkylsulfonyl)phosphonium anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms. The substituent of the alkyl group may, for example, be a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkoxysulfonyl group, an aryloxysulfonyl group or a cycloalkylaryloxysulfonate. The group or the like is preferably a fluorine atom or an alkyl group substituted by a fluorine atom.

另外,雙(烷基磺醯基)醯亞胺陰離子中的烷基亦可相互鍵結而形成環結構。藉此,酸強度增加。 Further, the alkyl groups in the bis(alkylsulfonyl) quinone imine anion may be bonded to each other to form a ring structure. Thereby, the acid strength increases.

其他非親核性陰離子例如可列舉:氟化磷(例如PF6 -)、氟化硼(例如BF4 -)、氟化銻(例如SbF6 -)等。 Examples of the other non-nucleophilic anion include phosphorus fluoride (for example, PF 6 - ), boron fluoride (for example, BF 4 - ), and cesium fluoride (for example, SbF 6 - ).

非親核性陰離子較佳為磺酸的至少α位經氟原子取代的脂肪族磺酸根陰離子、經氟原子或含氟原子的基團取代的芳香族磺酸根陰離子、烷基經氟原子取代的雙(烷基磺醯基)醯亞胺陰離子、烷基經氟原子取代的三(烷基磺醯基)甲基化物陰離子。非親核性陰離子更佳為全氟脂肪族磺酸根陰離子(進而佳為碳數4~8)、 含氟原子的苯磺酸根陰離子,進而更佳為九氟丁磺酸根陰離子、全氟辛磺酸根陰離子、五氟苯磺酸根陰離子、3,5-雙(三氟甲基)苯磺酸根陰離子。 The non-nucleophilic anion is preferably an aliphatic sulfonate anion having at least the α position of the sulfonic acid substituted by a fluorine atom, an aromatic sulfonate anion substituted with a fluorine atom or a fluorine atom-containing group, and an alkyl group substituted by a fluorine atom. A bis(alkylsulfonyl) quinone imine anion, a tris(alkylsulfonyl) methide anion having an alkyl group substituted with a fluorine atom. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (and thus preferably has a carbon number of 4 to 8), The fluorine atom-containing benzenesulfonate anion is more preferably a nonafluorobutanesulfonate anion, a perfluorooctanesulfonate anion, a pentafluorobenzenesulfonate anion or a 3,5-bis(trifluoromethyl)benzenesulfonate anion.

就酸強度的觀點而言,為了提高感度,較佳為產生酸的pKa為-1以下。 From the viewpoint of acid strength, in order to improve the sensitivity, it is preferred that the pKa of the generated acid is -1 or less.

另外,非親核性陰離子亦可列舉以下的通式(AN1)所表示的陰離子作為較佳態樣。 Further, the non-nucleophilic anion may be an anion represented by the following general formula (AN1) as a preferred embodiment.

式中,Xf分別獨立地表示氟原子或經至少一個氟原子取代的烷基。 In the formula, Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.

R1、R2分別獨立地表示氫原子、氟原子或烷基,存在多個的情形時的R1、R2可分別相同亦可不同。 R 1 and R 2 each independently represent a hydrogen atom, a fluorine atom or an alkyl group, and when there are a plurality of cases, R 1 and R 2 may be the same or different.

L表示二價連結基,存在多個的情形時的L可相同亦可不同。 L represents a divalent linking group, and when there are a plurality of L, the L may be the same or different.

A表示環狀的有機基。 A represents a cyclic organic group.

x表示1~20的整數,y表示0~10的整數,z表示0~10的整數。 x represents an integer from 1 to 20, y represents an integer from 0 to 10, and z represents an integer from 0 to 10.

對通式(AN1)加以更詳細說明。 The general formula (AN1) will be described in more detail.

Xf的經氟原子取代的烷基中的烷基較佳為碳數1~10,更佳為碳數1~4。另外,Xf的經氟原子取代的烷基較佳為全氟烷基。 The alkyl group in the alkyl group substituted by the fluorine atom of Xf is preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 4. Further, the alkyl group substituted with a fluorine atom of Xf is preferably a perfluoroalkyl group.

Xf較佳為氟原子或碳數1~4的全氟烷基。Xf具體可列舉:氟原子、CF3、C2F5、C3F7、C4F9、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9、CH2CH2C4F9,其中較佳為氟原子、CF3。尤佳為兩個Xf為氟原子。 Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms. Specific examples of Xf include a fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , CH 2 CH 2 C 4 F 9 , of which a fluorine atom or CF 3 is preferred. It is especially preferred that the two Xf are fluorine atoms.

R1、R2的烷基可具有取代基(較佳為氟原子),較佳為碳數1~4的基團。更佳為碳數1~4的全氟烷基。R1、R2的具有取代基的烷基的具體例可列舉:CF3、C2F5、C3F7、C4F9、C5F11、C6F13、C7F15、C8F17、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9、CH2CH2C4F9,其中較佳為CF3The alkyl group of R 1 and R 2 may have a substituent (preferably a fluorine atom), and is preferably a group having 1 to 4 carbon atoms. More preferably, it is a perfluoroalkyl group having 1 to 4 carbon atoms. Specific examples of the alkyl group having a substituent of R 1 and R 2 include CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , and C 7 F 15 . , C 8 F 17 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , CH 2 CH 2 C 4 F 9 , wherein CF 3 is preferred.

R1、R2較佳為氟原子或CF3R 1 and R 2 are preferably a fluorine atom or CF 3 .

x較佳為1~10,更佳為1~5。 x is preferably from 1 to 10, more preferably from 1 to 5.

y較佳為0~4,更佳為0。 y is preferably 0 to 4, more preferably 0.

z較佳為0~5,更佳為0~3。 z is preferably 0 to 5, more preferably 0 to 3.

L的二價連結基並無特別限定,可列舉:-COO-、-OCO-、-CO-、-O-、-S-、-SO-、-SO2-、伸烷基、伸環烷基、伸烯基或將這些多個連結而成的連結基等,較佳為總碳數12以下的連結基。其中,較佳為-COO-、-OCO-、-CO-、-O-,更佳為-COO-、-OCO-。 The divalent linking group of L is not particularly limited, and examples thereof include: -COO-, -OCO-, -CO-, -O-, -S-, -SO-, -SO 2 -, alkylene, cycloalkane The base group, the alkenyl group or the linking group obtained by linking these plurality of groups are preferably a linking group having a total carbon number of 12 or less. Among them, preferred are -COO-, -OCO-, -CO-, -O-, and more preferably -COO-, -OCO-.

A的環狀有機基只要具有環狀結構,則並無特別限定,可列舉脂環基、芳基、雜環基(不僅包含具有芳香族性者,亦包含不具有芳香族性者)等。 The cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and examples thereof include an alicyclic group, an aryl group, and a heterocyclic group (including not only aromatics but also aromatic ones).

脂環基可為單環亦可為多環,較佳為環戊基、環己基、環辛基等單環的環烷基,降冰片基、三環癸基、四環癸基、四環十二烷基、金剛烷基等多環的環烷基。其中,就可抑制曝光後加熱步驟中的膜中擴散性、改良遮罩錯誤增強因子(Mask Error Enhancement-Factor,MEEF)的觀點而言,較佳為降冰片基、三環癸基、四環癸基、四環十二烷基、金剛烷基等碳數7以上的具有大體積結構的脂環基。 The alicyclic group may be a single ring or a polycyclic ring, preferably a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group or a cyclooctyl group, a norbornyl group, a tricyclic fluorenyl group, a tetracyclic fluorenyl group or a tetracyclic ring. A polycyclic cycloalkyl group such as dodecyl or adamantyl. Among them, from the viewpoint of suppressing the diffusibility in the film in the post-exposure heating step and improving the Mask Error Enhancement-Factor (MEEF), it is preferably a norborne base, a tricyclic fluorenyl group, or a tetracyclic ring. An alicyclic group having a large volume structure having a carbon number of 7 or more, such as a mercapto group, a tetracyclododecyl group or an adamantyl group.

芳基可列舉苯環、萘環、菲環、蒽環。 Examples of the aryl group include a benzene ring, a naphthalene ring, a phenanthrene ring, and an anthracene ring.

雜環基可列舉來源於呋喃環、噻吩環、苯并呋喃環、苯并噻吩環、二苯并呋喃環、二苯并噻吩環、吡啶環的基團。其中,較佳為來源於呋喃環、噻吩環、吡啶環的基團。 The heterocyclic group may, for example, be a group derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring or a pyridine ring. Among them, a group derived from a furan ring, a thiophene ring or a pyridine ring is preferred.

另外,環狀的有機基亦可列舉內酯結構,具體例可列舉上述樹脂(P)可具有的通式(LC1-1)~通式(LC1-17)所表示的內酯結構。 In addition, the cyclic organic group may be a lactone structure, and a lactone structure represented by the general formula (LC1-1) to the general formula (LC1-17) which the resin (P) may have may be mentioned.

上述環狀的有機基可具有取代基,該取代基可列舉:烷基(可為直鏈、分支、環狀的任一種,較佳為碳數1~12)、環烷基(可為單環、多環、螺環的任一種,較佳為碳數3~20)、芳基(較佳為碳數6~14)、羥基、烷氧基、酯基、醯胺基、胺基甲酸乙酯基、脲基、硫醚基、磺醯胺基、磺酸酯基等。再者,構成環狀有機基的碳(有助於形成環的碳)亦可為羰基碳。 The cyclic organic group may have a substituent, and examples of the substituent include an alkyl group (which may be linear, branched or cyclic, preferably having a carbon number of 1 to 12) and a cycloalkyl group (which may be a single Any of a ring, a polycyclic ring, and a spiro ring, preferably having a carbon number of 3 to 20), an aryl group (preferably having a carbon number of 6 to 14), a hydroxyl group, an alkoxy group, an ester group, a decylamino group, or an aminocarboxylic acid. Ethyl ester group, urea group, thioether group, sulfonamide group, sulfonate group, and the like. Further, the carbon constituting the cyclic organic group (carbon which contributes to the formation of a ring) may also be a carbonyl carbon.

R201、R202及R203的有機基可列舉芳基、烷基、環烷基等。 The organic group of R 201 , R 202 and R 203 may, for example, be an aryl group, an alkyl group or a cycloalkyl group.

R201、R202及R203中,較佳為至少一個為芳基,更佳為三個全部為芳基。芳基除了苯基、萘基等以外,亦可為吲哚殘基、吡咯殘基等雜芳基。R201~R203的烷基及環烷基較佳可列舉碳數1~10的直鏈或分支烷基、碳數3~10的環烷基。烷基更佳可列舉甲基、乙基、正丙基、異丙基、正丁基等。環烷基更佳可列舉環丙基、環丁基、環戊基、環己基、環庚基等。該些基團可更具有取代基。該取代基可列舉:硝基、氟原子等鹵素原子、羧基、羥基、胺基、氰基、烷氧基(較佳為碳數1~15)、環烷基(較佳為碳數3~15)、芳基(較佳為碳數6~14)、烷氧基羰基(較佳為碳數2~7)、醯基(較佳為碳數2~12)、烷氧基羰氧基(較佳為碳數2~7)等,但不限定於該些基團。 Of R 201 , R 202 and R 203 , preferably at least one is an aryl group, and more preferably all three are aryl groups. The aryl group may be a heteroaryl group such as an anthracene residue or a pyrrole residue, in addition to a phenyl group or a naphthyl group. The alkyl group and the cycloalkyl group of R 201 to R 203 are preferably a linear or branched alkyl group having 1 to 10 carbon atoms or a cycloalkyl group having 3 to 10 carbon atoms. More preferably, the alkyl group may be a methyl group, an ethyl group, a n-propyl group, an isopropyl group or an n-butyl group. More preferably, the cycloalkyl group may be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or a cycloheptyl group. These groups may have more substituents. Examples of the substituent include a halogen atom such as a nitro group or a fluorine atom, a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), and a cycloalkyl group (preferably having a carbon number of 3~). 15) an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), a mercapto group (preferably having a carbon number of 2 to 12), and an alkoxycarbonyloxy group. (preferably, carbon number 2 to 7), etc., but it is not limited to these groups.

另外,於R201~R203中的2個鍵結而形成環結構的情形時,較佳為以下的通式(A1)所表示的結構。 In the case where two of R 201 to R 203 are bonded to form a ring structure, the structure represented by the following formula (A1) is preferred.

通式(A1)中,R1a~R13a分別獨立地表示氫原子或取代基。 In the formula (A1), R 1a to R 13a each independently represent a hydrogen atom or a substituent.

R1a~R13a中,較佳為1個~3個並非氫原子,更佳為R9a~R13a的任一個並非氫原子。 In R 1a to R 13a , preferably one to three are not hydrogen atoms, and more preferably any of R 9a to R 13a is not a hydrogen atom.

Za為單鍵或二價連結基。 Za is a single bond or a divalent linking group.

X-與通式(ZI)中的Z-為相同含意。 X - is the same as Z - in the formula (ZI).

R1a~R13a並非氫原子的情形時的具體例可列舉以下基團作為例子:鹵素原子、直鏈或分支或環狀的烷基、烯基、炔基、芳基、雜環基、氰基、硝基、羧基、烷氧基、芳氧基、矽烷基氧基、雜環氧基、醯氧基、胺甲醯氧基、烷氧基羰氧基、芳氧基羰氧基、胺基(包含苯胺基)、銨基、醯基胺基、胺基羰基胺基、烷氧基羰基胺基、芳氧基羰基胺基、胺磺醯基胺基、烷基磺醯基胺基及芳基磺醯基胺基、巰基、烷硫基、芳硫基、雜環硫基、胺磺醯基、磺基、烷基亞磺醯基及芳基亞磺醯基、烷基磺醯基及芳基磺醯基、醯基、芳氧基羰基、烷氧基羰基、胺甲醯基、芳基偶氮基及雜環偶氮基、醯亞胺基、膦基、氧膦基、氧膦基氧基、氧膦基胺基、膦醯基(phosphono)、矽烷基、肼基、脲基、硼酸基(-B(OH)2)、磷酸根基(-OPO(OH)2)、硫酸根基(-OSO3H)、其他公知的取代基。 Specific examples of the case where R 1a to R 13a are not a hydrogen atom include the following groups: a halogen atom, a linear or branched or cyclic alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, and a cyanogen. Base, nitro, carboxyl, alkoxy, aryloxy, decyloxy, heterocyclic oxy, decyloxy, amine methoxycarbonyl, alkoxycarbonyloxy, aryloxycarbonyloxy, amine Base (including anilino), ammonium, mercaptoamine, aminocarbonylamino, alkoxycarbonylamino, aryloxycarbonylamino, aminesulfonylamino, alkylsulfonylamino and Arylsulfonylamino, fluorenyl, alkylthio, arylthio, heterocyclic thio, sulfonyl, sulfo, alkylsulfinyl and arylsulfinyl, alkylsulfonyl And arylsulfonyl, fluorenyl, aryloxycarbonyl, alkoxycarbonyl, aminemethanyl, arylazo and heterocyclic azo, fluorenylene, phosphino, phosphinyl, oxygen Phosphonooxy, phosphinylamino, phosphono, decyl, decyl, ureido, boronic acid (-B(OH) 2 ), phosphate (-OPO(OH) 2 ), sulfuric acid Root (-OSO 3 H), other well-known substituents.

於R1a~R13a並非氫原子的情形時,較佳為經羥基取代的直鏈、分支、環狀的烷基。 When R 1a to R 13a are not a hydrogen atom, a linear, branched or cyclic alkyl group substituted with a hydroxyl group is preferred.

Za的二價連結基可列舉:伸烷基、伸芳基、羰基、磺醯基、羰氧基、羰基胺基、磺醯基醯胺基、醚鍵、硫醚鍵、胺基、二硫醚基、-(CH2)n-CO-、-(CH2)n-SO2-、-CH=CH-、胺基羰基胺基、胺基磺醯基胺基等(n為1~3的整數)。 The divalent linking group of Za may, for example, be an alkyl group, an aryl group, a carbonyl group, a sulfonyl group, a carbonyloxy group, a carbonylamino group, a sulfonylamino group, an ether bond, a thioether bond, an amine group, or a disulfide group. Ether group, -(CH 2 ) n -CO-, -(CH 2 ) n -SO 2 -, -CH=CH-, aminocarbonylamino group, aminosulfonylamino group, etc. (n is 1 to 3) Integer).

再者,R201、R202及R203中至少一個並非芳基的情形的較佳結構可列舉:日本專利特開2004-233661號公報的段落0046、段落0047、段落0048,日本專利特開2003-35948號公報的段落0040~段落0046,美國專利申請公開第2003/0224288A1號說明書中作為式(I-1)~式(I-70)而例示的化合物,美國專利申請公開第2003/0077540A1號說明書中作為式(IA-1)~式(IA-54)、式(IB-1)~式(IB-24)而例示的化合物等陽離子結構。 Further, a preferred structure of the case where at least one of R 201 , R 202 and R 203 is not an aryl group is exemplified by paragraph 0046, paragraph 0047, paragraph 0048 of Japanese Patent Laid-Open Publication No. 2004-233661, Japanese Patent Laid-Open No. 2003 - PCT Patent Application Publication No. 2003/0077540A1 In the specification, a cationic structure such as a compound exemplified by the formula (IA-1) to the formula (IA-54) and the formula (IB-1) to the formula (IB-24) is used.

通式(ZII)、通式(ZIII)中,R204~R207分別獨立地表示芳基、烷基或環烷基。 General formula (ZII), general formula (ZIII), R 204 ~ R 207 each independently represent an aryl, alkyl or cycloalkyl.

R204~R207的芳基、烷基、環烷基與作為上述化合物(ZI)中的R201~R203的芳基、烷基、環烷基所說明的芳基、烷基、環烷基相同。 R 204 ~ R 207 is aryl, alkyl, cycloalkyl and Examples of the compound R (ZI) in 201 ~ R 203 is an aryl group, an alkyl group, a cycloalkyl group described aryl, alkyl, cycloalkyl The same base.

R204~R207的芳基、烷基、環烷基可具有取代基。該取代基亦可列舉上述化合物(ZI)中的R201~R203的芳基、烷基、環烷基可具有的基團。 The aryl group, the alkyl group or the cycloalkyl group of R 204 to R 207 may have a substituent. The substituent may also be a group which the aryl group, the alkyl group or the cycloalkyl group of R 201 to R 203 in the above compound (ZI) may have.

Z-表示非親核性陰離子,可列舉與通式(ZI)中的Z-的非親核性陰離子相同者。 Z - represents a non-nucleophilic anion, and is the same as the non-nucleophilic anion of Z - in the general formula (ZI).

酸產生劑進而亦可列舉下述通式(ZIV)、通式(ZV)、 通式(ZVI)所表示的化合物。 Further, the acid generator may be exemplified by the following general formula (ZIV), general formula (ZV), A compound represented by the formula (ZVI).

通式(ZIV)~通式(ZVI)中,Ar3及Ar4分別獨立地表示芳基。 In the general formula (ZIV) to the general formula (ZVI), Ar 3 and Ar 4 each independently represent an aryl group.

R208、R209及R210分別獨立地表示烷基、環烷基或芳基。 R 208 , R 209 and R 210 each independently represent an alkyl group, a cycloalkyl group or an aryl group.

A表示伸烷基、伸烯基或伸芳基。 A represents an alkyl group, an alkenyl group or an aryl group.

Ar3、Ar4、R208、R209及R210的芳基的具體例可列舉與作為上述通式(ZI)中的R201、R202及R203的芳基的具體例相同的基團。 Specific examples of the aryl group of Ar 3 , Ar 4 , R 208 , R 209 and R 210 include the same groups as the specific examples of the aryl group of R 201 , R 202 and R 203 in the above formula (ZI). .

R208、R209及R210的烷基及環烷基的具體例分別可列舉與作為上述通式(ZI)中的R201、R202及R203的烷基及環烷基的具體例相同的基團。 Specific examples of the alkyl group and the cycloalkyl group of R 208 , R 209 and R 210 are the same as the specific examples of the alkyl group and the cycloalkyl group as R 201 , R 202 and R 203 in the above formula (ZI). Group.

A的伸烷基可列舉碳數1~12的伸烷基(例如亞甲基、伸乙基、伸丙基、伸異丙基、伸丁基、伸異丁基等),A的伸烯基可列舉碳數2~12的伸烯基(例如伸乙烯基、伸丙烯基、伸丁烯基等),A的伸芳基可列舉碳數6~10的伸芳基(例如伸苯基、甲伸苯基、伸萘基等)。 The alkylene group of A may, for example, be an alkylene group having 1 to 12 carbon atoms (e.g., methylene, ethyl, propyl, isopropyl, butyl, isobutyl, etc.), The base may be an alkenyl group having 2 to 12 carbon atoms (e.g., a vinyl group, a propenyl group, a butenyl group, etc.), and the aryl group of A may be a aryl group having a carbon number of 6 to 10 (e.g., a phenyl group). , methyl phenyl, naphthyl, etc.).

以下列舉酸產生劑中的尤佳例。 A preferred example of the acid generator is listed below.

[化140] [化140]

[化141] [化141]

[化142] [化142]

[化143] [化143]

[化145] [化145]

[化146] [化146]

[化147] [化147]

酸產生劑可單獨使用一種或組合使用兩種以上。 The acid generators may be used alone or in combination of two or more.

另外,以組成物的總固體成分為基準,光酸產生劑的含有率較佳為0.1質量%~50質量%,更佳為0.5質量%~45質量%,進而佳為1質量%~40質量%。 Further, the content of the photoacid generator is preferably from 0.1% by mass to 50% by mass, more preferably from 0.5% by mass to 45% by mass, even more preferably from 1% by mass to 40% by mass based on the total solid content of the composition. %.

[4]因酸的作用發生分解而產生酸的化合物 [4] Compounds that decompose due to the action of acid to produce acid

本發明的感光化射線性或感放射線性組成物亦可更含有一種或兩種以上的因酸的作用發生分解而產生酸的化合物(以下亦表述作酸增殖劑)。酸增殖劑所產生的酸較佳為磺酸、甲基化物酸或醯亞胺酸。以組成物的總固體成分為基準,酸增殖劑的含量較佳為0.1質量%~50質量%,更佳為0.5質量%~30質量%,進而佳為1.0質量%~20質量%。 The sensitizing ray-sensitive or radiation-sensitive composition of the present invention may further contain one or two or more compounds which are decomposed by an action of an acid to generate an acid (hereinafter also referred to as an acid multiplying agent). The acid produced by the acid multiplier is preferably a sulfonic acid, a methamic acid or a liminium acid. The content of the acid multiplying agent is preferably from 0.1% by mass to 50% by mass, more preferably from 0.5% by mass to 30% by mass, even more preferably from 1.0% by mass to 20% by mass based on the total solid content of the composition.

酸增殖劑與酸產生劑之量比(以組成物中的總固體成分為基準的酸增殖劑的固體成分量/以組成物中的總固體成分為基準的酸產生劑的固體成分量)並無特別限制,較佳為0.01~50,更佳為0.1~20,尤佳為0.2~1.0。 The ratio of the acid proliferator to the acid generator (the solid content of the acid multiplier based on the total solid content of the composition / the solid content of the acid generator based on the total solid content in the composition) There is no particular limitation, and it is preferably 0.01 to 50, more preferably 0.1 to 20, and particularly preferably 0.2 to 1.0.

以下示出本發明中可使用的化合物的例子,但不限定於該些例子。 Examples of the compounds which can be used in the present invention are shown below, but are not limited to these examples.

[5]溶劑 [5] Solvent

製備本發明的組成物時可使用的溶劑只要溶解各成分,則並無特別限定,例如可列舉:烷二醇單烷基醚羧酸酯(丙二醇單甲醚乙酸酯(PGMEA;別名1-甲氧基-2-乙醯氧基丙烷)等)、烷二醇單烷基醚(丙二醇單甲醚(PGME;1-甲氧基-2-丙醇)等)、乳酸烷基酯(乳酸乙酯、乳酸甲酯等)、環狀內酯(γ-丁內酯等,較佳為碳數4~10)、鏈狀或環狀的酮(2-庚酮、環己酮等,較佳為碳數4~10)、碳酸伸烷基酯(碳酸伸乙酯、碳酸伸丙酯等)、羧酸烷基酯(較佳為乙酸丁酯等乙酸烷基酯)、烷氧基乙酸烷基酯(乙氧基丙酸乙酯)等。其他可使用的溶劑例如可列舉:美國專利申請公開第2008/0248425A1號說明書的[0244]以後記載的溶劑等。 The solvent which can be used in the preparation of the composition of the present invention is not particularly limited as long as the components are dissolved, and examples thereof include an alkylene glycol monoalkyl ether carboxylate (propylene glycol monomethyl ether acetate (PGMEA; alias 1 - Methoxy-2-ethenyloxypropane), alkanediol monoalkyl ether (propylene glycol monomethyl ether (PGME; 1-methoxy-2-propanol), etc.), alkyl lactate (lactic acid) Ethyl ester, methyl lactate, etc.), cyclic lactone (γ-butyrolactone, etc., preferably 4 to 10 carbon atoms), chain or cyclic ketone (2-heptanone, cyclohexanone, etc.) Preferably, the carbon number is 4 to 10), alkyl carbonate (ethyl carbonate, propylene carbonate, etc.), alkyl carboxylate (preferably alkyl acetate such as butyl acetate), alkoxyacetic acid An alkyl ester (ethyl ethoxypropionate) or the like. Other solvents which can be used include, for example, the solvent described in [0244] of the specification of U.S. Patent Application Publication No. 2008/0248425 A1.

上述中,較佳為烷二醇單烷基醚羧酸酯及烷二醇單烷基醚。 Among the above, an alkanediol monoalkyl ether carboxylate and an alkanediol monoalkyl ether are preferred.

該些溶劑可單獨使用或混合使用兩種以上。於將兩種以上混合的情形時,較佳為將具有羥基的溶劑與不具有羥基的溶劑混合。具有羥基的溶劑與不具有羥基的溶劑之質量比為1/99~99/1,較佳為10/90~90/10,進而佳為20/80~60/40。 These solvents may be used alone or in combination of two or more. In the case of mixing two or more kinds, it is preferred to mix a solvent having a hydroxyl group with a solvent having no hydroxyl group. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, and more preferably from 20/80 to 60/40.

具有羥基的溶劑較佳為烷二醇單烷基醚,不具有羥基的溶劑較佳為烷二醇單烷基醚羧酸酯。 The solvent having a hydroxyl group is preferably an alkanediol monoalkyl ether, and the solvent having no hydroxyl group is preferably an alkanediol monoalkyl ether carboxylate.

[6]鹼性化合物 [6] Basic compounds

本發明的感光化射線性或感放射線性樹脂組成物亦可更含有鹼性化合物。鹼性化合物較佳為鹼性較苯酚更強的化合物。另外, 該鹼性化合物較佳為有機鹼性化合物,更佳為含氮鹼性化合物。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a basic compound. The basic compound is preferably a compound which is more basic than phenol. In addition, The basic compound is preferably an organic basic compound, more preferably a nitrogen-containing basic compound.

可使用的含氮鹼性化合物並無特別限定,例如可使用分類為以下的(1)~(7)的化合物。 The nitrogen-containing basic compound which can be used is not particularly limited, and for example, compounds classified as the following (1) to (7) can be used.

(1)由通式(BS-1)所表示的化合物 (1) a compound represented by the general formula (BS-1)

通式(BS-1)中,R分別獨立地表示氫原子或有機基。其中,3個R中至少一個為有機基。該有機基為直鏈或分支鏈的烷基、單環或多環的環烷基、芳基或芳烷基。 In the general formula (BS-1), R independently represents a hydrogen atom or an organic group. Among them, at least one of the three R is an organic group. The organic group is a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an aryl group or an aralkyl group.

作為R的烷基的碳數並無特別限定,通常1~20,較佳為1~12。 The carbon number of the alkyl group as R is not particularly limited, but is usually 1 to 20, preferably 1 to 12.

作為R的環烷基的碳數並無特別限定,通常為3~20,較佳為5~15。 The number of carbon atoms of the cycloalkyl group as R is not particularly limited, and is usually from 3 to 20, preferably from 5 to 15.

作為R的芳基的碳數並無特別限定,通常為6~20,較佳為6~10。具體可列舉苯基及萘基等。 The carbon number of the aryl group as R is not particularly limited, but is usually 6 to 20, preferably 6 to 10. Specific examples thereof include a phenyl group and a naphthyl group.

作為R的芳烷基的碳數並無特別限定,通常為7~20,較佳為7~11。具體可列舉苄基等。 The carbon number of the aralkyl group as R is not particularly limited, but is usually 7 to 20, preferably 7 to 11. Specific examples thereof include a benzyl group and the like.

作為R的烷基、環烷基、芳基及芳烷基中,氫原子可經 取代基所取代。該取代基例如可列舉:烷基、環烷基、芳基、芳烷基、羥基、羧基、烷氧基、芳氧基、烷基羰氧基及烷氧基羰基等。 As the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group of R, a hydrogen atom can pass through Substituted by a substituent. Examples of the substituent include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, a hydroxyl group, a carboxyl group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group, and an alkoxycarbonyl group.

再者,由通式(BS-1)所表示的化合物中,較佳為R中至少2個為有機基。 Further, among the compounds represented by the formula (BS-1), at least two of R are preferably an organic group.

由通式(BS-1)所表示的化合物的具體例可列舉:三正丁胺、三正戊胺、三正辛胺、三正癸胺、三異癸胺、二環己基甲胺、十四烷基胺、十五烷基胺、十六烷基胺、十八烷基胺、二癸胺、甲基十八烷基胺、二甲基十一烷基胺、N,N-二甲基十二烷基胺、甲基二-十八烷基胺、N,N-二丁基苯胺、N,N-二己基苯胺、2,6-二異丙基苯胺及2,4,6-三(第三丁基)苯胺。 Specific examples of the compound represented by the formula (BS-1) include tri-n-butylamine, tri-n-pentylamine, tri-n-octylamine, tri-n-decylamine, triisodecylamine, dicyclohexylmethylamine, and ten. Tetraalkylamine, pentadecylamine, hexadecylamine, octadecylamine, diamine, methyloctadecylamine, dimethylundecylamine, N,N-dimethyl Dodecylamine, methyl di-octadecylamine, N,N-dibutylaniline, N,N-dihexylaniline, 2,6-diisopropylaniline and 2,4,6- Tris(t-butyl)aniline.

另外,由通式(BS-1)所表示的較佳鹼性化合物可列舉至少一個R為經羥基取代的烷基的化合物。具體而言,例如可列舉三乙醇胺及N,N-二羥基乙基苯胺。 Further, preferred examples of the basic compound represented by the formula (BS-1) include at least one compound wherein R is a hydroxyl group-substituted alkyl group. Specific examples thereof include triethanolamine and N,N-dihydroxyethylaniline.

再者,作為R的烷基亦可於烷基鏈中具有氧原子。即,亦可形成氧伸烷基鏈。氧伸烷基鏈較佳為-CH2CH2O-。具體而言,例如可列舉:三(甲氧基乙氧基乙基)胺、及US6040112號說明書的第3行第60列以後例示的化合物。 Further, the alkyl group as R may have an oxygen atom in the alkyl chain. That is, an oxygen-extended alkyl chain can also be formed. The oxygen alkyl chain is preferably -CH 2 CH 2 O-. Specific examples thereof include tris(methoxyethoxyethyl)amine and the compounds exemplified in the third row and the 60th column of the specification of US Pat. No. 6,401,012.

通式(BS-1)所表示的鹼性化合物例如可列舉以下化合物。 The basic compound represented by the formula (BS-1) is exemplified by the following compounds.

[化150] [化150]

(2)具有含氮雜環結構的化合物 (2) Compounds having a nitrogen-containing heterocyclic structure

該含氮雜環可具有芳香族性,亦可不具有芳香族性。另外,亦可具有多個氮原子。進而,亦可含有氮以外的雜原子。具體而言,例如可列舉:具有咪唑結構的化合物(2-苯基苯并咪唑、2,4,5-三苯基咪唑等)、具有哌啶結構的化合物[N-羥基乙基哌啶及癸二酸雙(1,2,2,6,6-五甲基-4-哌啶基)酯等]、具有吡啶結構的化合物(4-二甲基胺基吡啶等)、以及具有安替比林(antipyrine)結構的化合 物(安替比林及羥基安替比林等)。 The nitrogen-containing heterocyclic ring may have aromaticity or may not be aromatic. In addition, it may have a plurality of nitrogen atoms. Further, it may contain a hetero atom other than nitrogen. Specific examples thereof include a compound having an imidazole structure (2-phenylbenzimidazole, 2,4,5-triphenylimidazole, etc.), a compound having a piperidine structure [N-hydroxyethylpiperidine, and Bis(1,2,2,6,6-pentamethyl-4-piperidinyl) phthalate, a compound having a pyridine structure (4-dimethylaminopyridine, etc.), and having an anthracene Combination of antipyrine structures (antipyrine and hydroxyantipyrine, etc.).

另外,亦可較佳地使用具有2個以上的環結構的化合物。具體而言,例如可列舉:1,5-二氮雜雙環[4.3.0]壬-5-烯及1,8-二氮雜雙環[5.4.0]-十一-7-烯。 Further, a compound having two or more ring structures can also be preferably used. Specific examples thereof include 1,5-diazabicyclo[4.3.0]non-5-ene and 1,8-diazabicyclo[5.4.0]-undec-7-ene.

(3)具有苯氧基的胺化合物 (3) Amine compounds having a phenoxy group

所謂具有苯氧基的胺化合物,是指於胺化合物所含的烷基的與N原子為相反側的末端具備苯氧基的化合物。苯氧基例如可具有烷基、烷氧基、鹵素原子、氰基、硝基、羧基、羧酸酯基、磺酸酯基、芳基、芳烷基、醯氧基及芳氧基等取代基。 The amine compound having a phenoxy group means a compound having a phenoxy group at the terminal opposite to the N atom of the alkyl group contained in the amine compound. The phenoxy group may have, for example, an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group, a sulfonate group, an aryl group, an aralkyl group, a decyloxy group, and an aryloxy group. base.

該化合物更佳為於苯氧基與氮原子之間具有至少一個氧伸烷基鏈。一分子中的氧伸烷基鏈的個數較佳為3個~9個,更佳為4個~6個。氧伸烷基鏈中,尤佳為-CH2CH2O-。 More preferably, the compound has at least one oxygen alkyl chain between the phenoxy group and the nitrogen atom. The number of oxygen-extended alkyl chains in one molecule is preferably from 3 to 9, more preferably from 4 to 6. In the oxygen alkyl chain, it is particularly preferably -CH 2 CH 2 O-.

具體例可列舉:2-[2-{2-(2,2-二甲氧基-苯氧基乙氧基)乙基}-雙-(2-甲氧基乙基)]-胺及US2007/0224539A1號說明書的段落[0066]中例示的化合物(C1-1)~化合物(C3-3)。 Specific examples include 2-[2-{2-(2,2-dimethoxy-phenoxyethoxy)ethyl}-bis-(2-methoxyethyl)]-amine and US2007 Compound (C1-1) to compound (C3-3) exemplified in paragraph [0066] of the specification 02724539A1.

具有苯氧基的胺化合物例如是藉由以下方式獲得:將具有苯氧基的一級或二級胺與鹵代烷基醚加熱而使其反應,添加氫氧化鈉、氫氧化鉀及四烷基銨等強鹼的水溶液後,利用乙酸乙酯及氯仿等有機溶劑進行萃取。另外,具有苯氧基的胺化合物亦可藉由以下方式獲得:將一級或二級胺與於末端具有苯氧基的鹵代烷基醚加熱而使其反應,添加氫氧化鈉、氫氧化鉀及四烷基銨等強鹼的水溶液後,利用乙酸乙酯及氯仿等有機溶劑進行萃取。 The amine compound having a phenoxy group is obtained, for example, by heating a primary or secondary amine having a phenoxy group and a halogenated alkyl ether to react, and adding sodium hydroxide, potassium hydroxide, tetraalkylammonium, or the like. After the aqueous solution of the strong base is extracted, it is extracted with an organic solvent such as ethyl acetate or chloroform. Further, an amine compound having a phenoxy group can also be obtained by heating a primary or secondary amine with a halogenated alkyl ether having a phenoxy group at the terminal, and adding sodium hydroxide, potassium hydroxide and tetra After an aqueous solution of a strong base such as an alkylammonium is extracted with an organic solvent such as ethyl acetate or chloroform.

(4)銨鹽 (4) ammonium salt

鹼性化合物亦可適當地使用銨鹽。銨鹽的陰離子例如可列舉:鹵化物、磺酸鹽、硼酸鹽及磷酸鹽。這些中,尤佳為鹵化物及磺酸鹽。 As the basic compound, an ammonium salt can also be suitably used. Examples of the anion of the ammonium salt include a halide, a sulfonate, a borate, and a phosphate. Among these, halides and sulfonates are particularly preferred.

鹵化物尤佳為氯化物、溴化物及碘化物。 Halides are particularly preferred as chlorides, bromides and iodides.

磺酸鹽尤佳為碳數1~20的有機磺酸鹽。有機磺酸鹽例如可列舉碳數1~20的烷基磺酸鹽及芳基磺酸鹽。 The sulfonate is particularly preferably an organic sulfonate having 1 to 20 carbon atoms. Examples of the organic sulfonate include an alkylsulfonate having 1 to 20 carbon atoms and an arylsulfonate.

烷基磺酸鹽所含的烷基可具有取代基。該取代基例如可列舉:氟原子、氯原子、溴原子、烷氧基、醯基及芳基。烷基磺酸鹽具體可列舉:甲磺酸鹽、乙磺酸鹽、丁磺酸鹽、己磺酸鹽、辛磺酸鹽、苄基磺酸鹽、三氟甲磺酸鹽、五氟乙磺酸鹽及九氟丁磺酸鹽。 The alkyl group contained in the alkyl sulfonate may have a substituent. Examples of the substituent include a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, a fluorenyl group, and an aryl group. Specific examples of the alkyl sulfonate include mesylate, ethanesulfonate, butanesulfonate, hexanosulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, and pentafluoroethane. Sulfonate and nonafluorobutanesulfonate.

芳基磺酸鹽所含的芳基例如可列舉苯基、萘基及蒽基。該些芳基可具有取代基。該取代基例如較佳為碳數1~6的直鏈或分支鏈烷基及碳數3~6的環烷基。具體而言,例如較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、正己基及環己基。其他取代基可列舉:碳數1~6的烷氧基、鹵素原子、氰基、硝基、醯基及醯氧基。 Examples of the aryl group contained in the arylsulfonate include a phenyl group, a naphthyl group, and an anthracenyl group. The aryl groups may have a substituent. The substituent is preferably, for example, a linear or branched alkyl group having 1 to 6 carbon atoms and a cycloalkyl group having 3 to 6 carbon atoms. Specifically, for example, a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a t-butyl group, a n-hexyl group, and a cyclohexyl group are preferable. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, a cyano group, a nitro group, a decyl group and a decyloxy group.

該銨鹽亦可為氫氧化物或羧酸鹽。於該情形時,該銨鹽尤佳為碳數1~8的氫氧化四烷基銨(氫氧化四甲基銨及氫氧化四乙基銨、氫氧化四-(正丁基)銨等氫氧化四烷基銨)。 The ammonium salt can also be a hydroxide or a carboxylate. In this case, the ammonium salt is preferably a tetraalkylammonium hydroxide having a carbon number of 1 to 8 (tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-(n-butyl)ammonium hydroxide or the like. Tetraalkylammonium oxide).

較佳的鹼性化合物例如可列舉:胍(guanidine)、胺基 吡啶、胺基烷基吡啶、胺基吡咯啶、吲唑、咪唑、吡唑、吡嗪、嘧啶、嘌呤、咪唑啉、吡唑啉、哌嗪、胺基嗎啉及胺基烷基嗎啉。該些化合物可更具有取代基。 Preferred basic compounds include, for example, guanidine and an amine group. Pyridine, aminoalkylpyridine, aminopyrrolidine, oxazole, imidazole, pyrazole, pyrazine, pyrimidine, indole, imidazoline, pyrazoline, piperazine, aminomorpholine and aminoalkylmorpholine. These compounds may have more substituents.

較佳的取代基例如可列舉:胺基、胺基烷基、烷基胺基、胺基芳基、芳基胺基、烷基、烷氧基、醯基、醯氧基、芳基、芳氧基、硝基、羥基及氰基。 Preferred examples of the substituent include an amine group, an aminoalkyl group, an alkylamino group, an aminoaryl group, an arylamino group, an alkyl group, an alkoxy group, a decyl group, a decyloxy group, an aryl group, and an aromatic group. Oxyl, nitro, hydroxy and cyano groups.

尤佳的鹼性化合物例如可列舉:胍、1,1-二甲基胍、1,1,3,3-四甲基胍、咪唑、2-甲基咪唑、4-甲基咪唑、N-甲基咪唑、2-苯基咪唑、4,5-二苯基咪唑、2,4,5-三苯基咪唑、2-胺基吡啶、3-胺基吡啶、4-胺基吡啶、2-二甲基胺基吡啶、4-二甲基胺基吡啶、2-二乙基胺基吡啶、2-(胺基甲基)吡啶、2-胺基-3-甲基吡啶、2-胺基-4-甲基吡啶、2-胺基5-甲基吡啶、2-胺基-6-甲基吡啶、3-胺基乙基吡啶、4-胺基乙基吡啶、3-胺基吡咯啶、哌嗪、N-(2-胺基乙基)哌嗪、N-(2-胺基乙基)哌啶、4-胺基-2,2,6,6-四甲基哌啶、4-哌啶并哌啶、2-亞胺基哌啶、1-(2-胺基乙基)吡咯啶、吡唑、3-胺基-5-甲基吡唑、5-胺基-3-甲基-1-對甲苯基吡唑、吡嗪、2-(胺基甲基)-5甲基吡嗪、嘧啶、2,4-二胺基嘧啶、4,6-二羥基嘧啶、2-吡唑啉、3-吡唑啉、N-胺基嗎啉及N-(2-胺基乙基)嗎啉。 Particularly preferred basic compounds include, for example, hydrazine, 1,1-dimethylhydrazine, 1,1,3,3-tetramethylguanidine, imidazole, 2-methylimidazole, 4-methylimidazole, N- Methylimidazole, 2-phenylimidazole, 4,5-diphenylimidazole, 2,4,5-triphenylimidazole, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2- Dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2-(aminomethyl)pyridine, 2-amino-3-methylpyridine, 2-amino group 4-methylpyridine, 2-amino 5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-aminopyrrolidine , piperazine, N-(2-aminoethyl)piperazine, N-(2-aminoethyl)piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4 - piperidin piperidine, 2-iminopiperidine, 1-(2-aminoethyl)pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3- Methyl-1-p-tolylpyrazole, pyrazine, 2-(aminomethyl)-5methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2- Pyrazoline, 3-pyrazoline, N-aminomorpholine and N-(2-aminoethyl)morpholine.

(5)具有質子受體性官能基,且藉由光化射線或放射線的照射發生分解而產生質子受體性降低、消失或由質子受體性變化為酸性的化合物的化合物(PA) (5) A compound (PA) having a proton-receptive functional group and decomposing by irradiation with actinic rays or radiation to cause a decrease in proton acceptability, disappearance, or a change from a proton acceptor to an acidic compound.

本發明的組成物亦可更含有以下化合物作為鹼性化合物:具 有質子受體性官能基,且藉由光化射線或放射線的照射發生分解而產生質子受體性降低、消失或由質子受體性變化為酸性的化合物的化合物[以下亦稱為化合物(PA)]。 The composition of the present invention may further contain the following compound as a basic compound: A compound having a proton-receptive functional group and which is decomposed by irradiation with actinic rays or radiation to cause a decrease in proton acceptability, disappearance, or a change from proton acceptor to acid (hereinafter also referred to as a compound (PA) )].

所謂質子受體性官能基,是指可與質子發生靜電相互作用的基團或具有電子的官能基,例如為具有環狀聚醚等巨環結構的官能基、或含有具有無助於π共軛的非共用電子對的氮原子的官能基。所謂具有無助於π共軛的非共用電子對的氮原子,例如為具有下述通式所示的部分結構的氮原子。 The term "proton acceptor functional group" refers to a group which can electrostatically interact with a proton or a functional group having an electron, such as a functional group having a macrocyclic structure such as a cyclic polyether, or a A functional group of a nitrogen atom of a non-shared electron pair of a yoke. The nitrogen atom having an unshared electron pair which does not contribute to π conjugate is, for example, a nitrogen atom having a partial structure represented by the following general formula.

質子受體性官能基的較佳部分結構例如可列舉:冠醚、氮雜冠醚、一級~三級胺、吡啶、咪唑、吡嗪結構等。 Preferred partial structures of the proton acceptor functional group include, for example, a crown ether, an azacrown ether, a primary to tertiary amine, a pyridine, an imidazole, a pyrazine structure, and the like.

化合物(PA)藉由光化射線或放射線的照射而分解,並產生質子受體性降低、消失或由質子受體性變化為酸性的化合物。此處,所謂質子受體性的降低、消失或由質子受體性向酸性的變化,是指由對質子受體性官能基加成質子所引起的質子受體性的變化,具體而言,是指由具有質子受體性官能基的化合物(PA)與質子來生成質子加成物時,其化學平衡中的平衡常數減少。 The compound (PA) is decomposed by irradiation with actinic rays or radiation, and produces a compound having reduced proton acceptability, disappearance, or acidity change from proton acceptor. Here, the decrease or disappearance of proton acceptor property or the change from proton acceptor property to acidity refers to a change in proton acceptor property caused by the addition of a proton to a proton acceptor functional group. Specifically, When a proton-addition product is formed from a compound (PA) having a proton-receptive functional group and a proton, the equilibrium constant in the chemical equilibrium is reduced.

以下示出化合物(PA)的具體例,但不限定於該些具體 例。 Specific examples of the compound (PA) are shown below, but are not limited to the specific examples. example.

[化154] [化154]

[化155] [化155]

[化156] [化156]

[化157] [化157]

[化158] [化158]

[化159] [化159]

[化160] [化160]

另外,本發明中,亦可適當選擇產生通式(PA-1)所表示的化合物的化合物以外的化合物(PA)。例如亦可使用為離子性化合物且於陽離子部中具有質子受體部位的化合物。更具體而言,可列舉下述通式(7)所表示的化合物等。 Further, in the present invention, a compound (PA) other than the compound which produces the compound represented by the formula (PA-1) can be appropriately selected. For example, a compound which is an ionic compound and has a proton acceptor moiety in the cation moiety can also be used. More specifically, a compound represented by the following formula (7) or the like can be given.

式中,A表示硫原子或碘原子。 In the formula, A represents a sulfur atom or an iodine atom.

m表示1或2,n表示1或2。其中,於A為硫原子時,m+n=3,於A為碘原子時,m+n=2。 m represents 1 or 2, and n represents 1 or 2. Wherein, when A is a sulfur atom, m+n=3, and when A is an iodine atom, m+n=2.

R表示芳基。 R represents an aryl group.

RN表示經質子受體性官能基取代的芳基。 R N represents an aryl group substituted with a proton acceptor functional group.

X-表示抗衡陰離子。 X - represents a counter anion.

X-的具體例可列舉與上述通式(ZI)中的X-相同者。 Specific examples of X - may be the same as X- in the above formula (ZI).

R及RN的芳基的具體例可較佳地列舉苯基。 A specific example of the aryl group of R and R N is preferably a phenyl group.

RN所具有的質子受體性官能基的具體例與上述式(PA-1)中說明的質子受體性官能基相同。 Specific examples of the proton acceptor functional group possessed by R N are the same as the proton acceptor functional group described in the above formula (PA-1).

於本發明的組成物中,於總固體成分中,化合物(PA)於組成物總體中的調配率較佳為0.1質量%~10質量%,更佳為1質量%~8質量%。 In the composition of the present invention, the compounding ratio of the compound (PA) in the total composition of the total solid content is preferably from 0.1% by mass to 10% by mass, more preferably from 1% by mass to 8% by mass.

(6)胍化合物 (6) bismuth compound

本發明的組成物亦可更含有具有下式所表示的結構的胍化合物。 The composition of the present invention may further contain an anthracene compound having a structure represented by the following formula.

胍化合物藉由3個氮而使共軛酸的正電荷分散穩定,故 顯示出強鹼性。 The ruthenium compound stabilizes the positive charge of the conjugate acid by three nitrogens, so Shows strong alkaline.

本發明的胍化合物(A)的鹼性較佳為共軛酸的pKa為6.0以上,7.0~20.0的情況下,與酸的中和反應性高且粗糙度特性優異,故較佳,更佳為8.0~16.0。 The basicity of the ruthenium compound (A) of the present invention is preferably such that the pKa of the conjugated acid is 6.0 or more, and when it is 7.0 to 20.0, the neutralization reactivity with the acid is high and the roughness characteristics are excellent, which is preferable and preferable. It is 8.0~16.0.

因此種強鹼性,故可抑制酸的擴散性,有助於形成優異的圖案形狀。 Therefore, since the species is strongly alkaline, it can suppress the diffusibility of the acid and contribute to the formation of an excellent pattern shape.

再者,此處所謂「pKa」,表示水溶液中的pKa,例如是記載於「化學便覽(II)」(修訂4版,1993年,日本化學會編,丸善股份有限公司)中,該值越低則表示酸強度越大。水溶液中的pKa具體可藉由使用無限稀釋水溶液測定25℃下的酸解離常數來實際測定,另外,亦可使用下述套裝軟體(software package)1,藉由計算來求出基於哈米特(Hammett)的取代基常數及公知文獻值的資料庫(database)的值。本說明書中記載的pKa的值全部表示使用該套裝軟體藉由計算所求出的值。 In addition, the "pKa" here means that the pKa in an aqueous solution is described, for example, in "Chemical Fact (II)" (Revised 4th Edition, 1993, edited by the Chemical Society of Japan, Maruzen Co., Ltd.). A low value indicates a greater acid strength. The pKa in the aqueous solution can be specifically determined by measuring the acid dissociation constant at 25 ° C using an infinitely diluted aqueous solution. Alternatively, the following software package 1 can be used to calculate the Hammett based on the calculation. The substituent constant of Hammett) and the value of the database of well-known literature values. The values of pKa described in the present specification all indicate values obtained by calculation using the kit software.

套裝軟體1:先進化學發展(Advanced Chemistry Development)(ACD/Labs)軟體(Software)版本8.14(V8.14)供Solaris系統使用(for Solaris)(1994-2007ACD/Labs)。 Software Package 1: Advanced Chemistry Development (ACD/Labs) Software Version 8.14 (V8.14) for Solaris Systems (for Solaris) (1994-2007 ACD/Labs).

本發明中,所謂logP,是指正辛醇/水分配係數(P)的對數值,為可對廣範圍的化合物賦予其親水性/疏水性的特徵的有效參數。通常藉由計算而非實驗來求出分配係數,於本發明中,表示藉由化學繪圖(CS Chem Draw Ultra)版本8.0(Ver.8.0)套裝軟體(software package)(克里朋碎片法(Crippen's fragmentation method))所計算的值。 In the present invention, the term "logP" means a logarithmic value of the n-octanol/water partition coefficient (P), and is an effective parameter for imparting hydrophilicity/hydrophobicity to a wide range of compounds. The distribution coefficient is usually obtained by calculation rather than experiment. In the present invention, it is represented by CS Chem Draw Ultra version 8.0 (Ver. 8.0) software package (Crippen's method) Fragmentation Method)) The calculated value.

另外,胍化合物(A)的logP較佳為10以下。藉由為上述值以下,可均勻地含有於抗蝕劑膜中。 Further, the log P of the hydrazine compound (A) is preferably 10 or less. By being equal to or less than the above value, it can be uniformly contained in the resist film.

本發明的胍化合物(A)的logP較佳為2~10的範圍,更佳為3~8的範圍,進而佳為4~8的範圍。 The log P of the ruthenium compound (A) of the present invention is preferably in the range of 2 to 10, more preferably in the range of 3 to 8, and further preferably in the range of 4 to 8.

另外,本發明的胍化合物(A)較佳為除了胍結構以外不具有氮原子。 Further, the ruthenium compound (A) of the present invention preferably has no nitrogen atom other than the ruthenium structure.

以下示出胍化合物的具體例,但不限定於該些具體例。 Specific examples of the ruthenium compound are shown below, but are not limited to these specific examples.

[化164] [化164]

(7)具有氮原子、且具有因酸的作用而脫離的基團的低分子化合物 (7) a low molecular compound having a nitrogen atom and having a group desorbed by the action of an acid

本發明的組成物可含有具有氮原子、且具有因酸的作用而脫離的基團的低分子化合物(以下亦稱為「低分子化合物(D)」或「化合物(D)」)。低分子化合物(D)較佳為於因酸的作用而脫離的基團脫離後,具有鹼性。 The composition of the present invention may contain a low molecular compound having a nitrogen atom and having a group which is desorbed by the action of an acid (hereinafter also referred to as "low molecular compound (D)" or "compound (D)"). The low molecular compound (D) is preferably basic after being detached from the group which is detached by the action of an acid.

因酸的作用而脫離的基團並無特別限定,較佳為縮醛基、碳酸酯基、胺基甲酸酯基(carbamate group)、三級酯基、三級 羥基、半胺縮醛醚基(hemiaminal ether group),尤佳為胺基甲酸酯基、半胺縮醛醚基。 The group which is detached by the action of an acid is not particularly limited, and is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, and a tertiary stage. A hydroxyl group or a hemiminal ether group, particularly preferably a urethane group or a hemiamine acetal group.

具有因酸的作用而脫離的基團的低分子化合物(D)的分子量較佳為100~1000,更佳為100~700,尤佳為100~500。 The molecular weight of the low molecular compound (D) having a group which is desorbed by the action of an acid is preferably from 100 to 1,000, more preferably from 100 to 700, still more preferably from 100 to 500.

化合物(D)較佳為於氮原子上具有因酸的作用而脫離的基團的胺衍生物。 The compound (D) is preferably an amine derivative having a group which is liberated by an action of an acid on a nitrogen atom.

化合物(D)亦可含有於氮原子上具有保護基的胺基甲酸酯基。構成胺基甲酸酯基的保護基可由下述通式(d-1)來表示。 The compound (D) may also contain a urethane group having a protective group on a nitrogen atom. The protecting group constituting the urethane group can be represented by the following formula (d-1).

通式(d-1)中,R'分別獨立地表示氫原子、直鏈狀或分支狀烷基、環烷基、芳基、芳烷基或烷氧基烷基。R'亦可相互鍵結而形成環。 In the formula (d-1), R' each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkoxyalkyl group. R' may also be bonded to each other to form a ring.

R'較佳為直鏈狀或分支狀的烷基、環烷基、芳基。更佳為直鏈狀或分支狀的烷基、環烷基。 R' is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group. More preferably, it is a linear or branched alkyl group or a cycloalkyl group.

以下示出此種基團的具體結構。 The specific structure of such a group is shown below.

[化166] [化166]

化合物(D)亦可藉由將鹼性化合物與通式(d-1)所表示的結構任意組合而構成。 The compound (D) can also be constituted by arbitrarily combining the basic compound with the structure represented by the formula (d-1).

化合物(D)尤佳為具有下述通式(D)所表示的結構。 The compound (D) is particularly preferably a structure represented by the following formula (D).

再者,化合物(D)只要為具有因酸的作用而脫離的基團的低分子化合物,則亦可為相當於上述鹼性化合物者。 In addition, the compound (D) may be a low molecular compound having a group which is detached by the action of an acid, and may be equivalent to the above basic compound.

通式(D)中,Ra表示氫原子、烷基、環烷基、芳基或芳烷基。另外,於n=2時,2個Ra可相同亦可不同,2個Ra亦可相互鍵結而形成二價雜環式烴基(較佳為碳數20以下)或其衍生物。 In the formula (D), Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Further, when n = 2, the two Ra may be the same or different, and the two Ra may be bonded to each other to form a divalent heterocyclic hydrocarbon group (preferably having a carbon number of 20 or less) or a derivative thereof.

Rb分別獨立地表示氫原子、烷基、環烷基、芳基、芳烷基、烷氧基烷基。其中,於-C(Rb)(Rb)(Rb)中,於一個以上的Rb為氫原子時,其餘Rb的至少一個為環丙基、1-烷氧基烷基或芳基。 Rb each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. Wherein, in -C(Rb)(Rb)(Rb), when at least one Rb is a hydrogen atom, at least one of the remaining Rb is a cyclopropyl group, a 1-alkoxyalkyl group or an aryl group.

至少2個Rb亦可鍵結而形成脂環式烴基、芳香族烴基、雜環式烴基或其衍生物。 At least two Rbs may also be bonded to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof.

n表示0~2的整數,m表示1~3的整數,n+m=3。 n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n + m = 3.

通式(D)中,Ra及Rb所表示的烷基、環烷基、芳基、芳烷基可經羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基、側氧基等官能基、烷氧基、鹵素原子所取代。關於Rb所表示的烷氧基烷基,亦相同。 In the formula (D), the alkyl group, the cycloalkyl group, the aryl group or the aralkyl group represented by Ra and Rb may be via a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group, a side oxygen group. Substituted by a functional group such as a group, an alkoxy group or a halogen atom. The same applies to the alkoxyalkyl group represented by Rb.

上述Ra及/或Rb的烷基、環烷基、芳基及芳烷基(該些烷基、環烷基、芳基及芳烷基可經上述官能基、烷氧基、鹵素原子所取代)可列舉:例如來源於甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、十一烷、十二烷等直鏈狀、分支狀的烷烴的基團,來源於該些烷烴的基團經例如環丁基、環戊基、環己基等 環烷基的一種以上或一個以上所取代的基團;來源於環丁烷、環戊烷、環己烷、環庚烷、環辛烷、降冰片烷、金剛烷、降金剛烷等環烷烴的基團,或來源於該些環烷烴的基團經例如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基、第三丁基等直鏈狀或分支狀的烷基的一種以上或一個以上取代的基團;來源於苯、萘、蒽等芳香族化合物的基團,來源於該些芳香族化合物的基團經例如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基、第三丁基等直鏈狀或分支狀的烷基的一種以上或一個以上所取代的基團;來源於吡咯啶、哌啶、嗎啉、四氫呋喃、四氫吡喃、吲哚、吲哚啉、喹啉、全氫喹啉、吲唑、苯并咪唑等雜環化合物的基團,來源於該些雜環化合物的基團經直鏈狀或分支狀的烷基或來源於芳香族化合物的基團的一種以上或一個以上所取代的基團,來源於直鏈狀或分支狀的烷烴的基團、來源於環烷烴的基團經苯基、萘基、蒽基等來源於芳香族化合物的基團的一種以上或一個以上取代的基團等,或上述取代基經羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基、側氧基等官能基取代的基團等。 The alkyl group, the cycloalkyl group, the aryl group and the aralkyl group of the above Ra and/or Rb (the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group may be substituted by the above functional group, alkoxy group or halogen atom) ), for example, a linear or branched type derived from methane, ethane, propane, butane, pentane, hexane, heptane, octane, decane, decane, undecane or dodecane a group of an alkane derived from a group of the alkane such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or the like a group of one or more substituted groups of a cycloalkyl group; a cycloalkane derived from cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane, noradamantane a group, or a group derived from the cycloalkane such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl, third One or more substituted groups of a linear or branched alkyl group such as a butyl group; a group derived from an aromatic compound such as benzene, naphthalene or an anthracene, and a group derived from the aromatic compound is, for example, One or more of linear or branched alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl, and t-butyl or More than one substituted group; derived from pyrrolidine, piperidine, morpholine, tetrahydrofuran, tetrahydropyran, hydrazine, porphyrin, quinoline, perhydroquinoline, carbazole, benzimidazole, etc. a group of a compound derived from a group of the heterocyclic compound, a linear or branched alkyl group or a group derived from an aromatic compound Or one or more substituted groups, a group derived from a linear or branched alkane, a group derived from a cycloalkane group, a group derived from an aromatic compound such as a phenyl group, a naphthyl group or a fluorenyl group. The above-mentioned one or more substituted groups and the like, or a group in which the above substituent is substituted with a functional group such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group or a pendant oxy group.

另外,上述Ra相互鍵結而形成的二價雜環式烴基(較佳為碳數1~20)或其衍生物例如可列舉:來源於吡咯啶、哌啶、嗎啉、1,4,5,6-四氫嘧啶、1,2,3,4-四氫喹啉、1,2,3,6-四氫吡啶、高哌嗪、4-氮雜苯并咪唑、苯并三唑、5-氮雜苯并三唑、1H-1,2,3- 三唑、1,4,7-三氮雜環壬烷、四唑、7-氮雜吲哚、吲唑、苯并咪唑、咪唑并[1,2-a]吡啶、(1S,4S)-(+)-2,5-二氮雜雙環[2.2.1]庚烷、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、吲哚、吲哚啉、1,2,3,4-四氫喹噁啉、全氫喹啉、1,5,9-三氮雜環十二烷等雜環式化合物的基團,來源於該些雜環式化合物的基團經來源於直鏈狀或分支狀的烷烴的基團、來源於環烷烴的基團、來源於芳香族化合物的基團、來源於雜環化合物的基團、羥基、氰基、胺基、吡咯啶基、哌啶基、嗎啉基、側氧基等官能基的一種以上或一個以上所取代的基團等。 Further, the divalent heterocyclic hydrocarbon group (preferably having a carbon number of 1 to 20) or a derivative thereof in which the above Ra is bonded to each other may, for example, be derived from pyrrolidine, piperidine, morpholine, 1,4,5. ,6-tetrahydropyrimidine, 1,2,3,4-tetrahydroquinoline, 1,2,3,6-tetrahydropyridine, homopiperazine, 4-azabenzimidazole, benzotriazole, 5 -azabenzotriazole, 1H-1,2,3- Triazole, 1,4,7-triazacyclononane, tetrazole, 7-azaindole, oxazole, benzimidazole, imidazo[1,2-a]pyridine, (1S, 4S)- (+)-2,5-diazabicyclo[2.2.1]heptane, 1,5,7-triazabicyclo[4.4.0]non-5-ene, anthracene, porphyrin, 1, a group of a heterocyclic compound such as 2,3,4-tetrahydroquinoxaline, perhydroquinoline or 1,5,9-triazacyclododecane, derived from a group of the heterocyclic compound a group derived from a linear or branched alkane, a group derived from a cycloalkane, a group derived from an aromatic compound, a group derived from a heterocyclic compound, a hydroxyl group, a cyano group, an amine group, a pyrrole group One or more or one or more substituted groups of a functional group such as a pyridyl group, a piperidinyl group, a morpholinyl group or a pendant oxy group.

具體示出本發明中的尤佳的化合物(D),但本發明不限定於此。 Specifically, the compound (D) which is particularly preferred in the present invention is specifically shown, but the present invention is not limited thereto.

[化168] [化168]

[化169] [化169]

通式(D)所表示的化合物可根據日本專利特開2007-298569號公報、日本專利特開2009-199021號公報等來合成。 The compound represented by the formula (D) can be synthesized in accordance with JP-A-2007-298569, JP-A-2009-199021, and the like.

本發明中,低分子化合物(D)可單獨使用一種或混合使用兩種以上。 In the present invention, the low molecular compound (D) may be used alone or in combination of two or more.

本發明的組成物可含有低分子化合物(D)亦可不含低分子化合物(D),於含有低分子化合物(D)的情形時,以與上述鹼性化合物合計的組成物的總固體成分為基準,化合物(D)的含量通常為0.001質量%~20質量%,較佳為0.001質量%~10質量%,更佳為0.01質量%~5質量%。 The composition of the present invention may contain a low molecular compound (D) or a low molecular compound (D). When the low molecular compound (D) is contained, the total solid content of the composition in combination with the above basic compound is The content of the compound (D) is usually 0.001% by mass to 20% by mass, preferably 0.001% by mass to 10% by mass, more preferably 0.01% by mass to 5% by mass.

另外,於本發明的組成物含有酸產生劑的情形時,酸產生劑與化合物(D)於組成物中的使用比例較佳為酸產生劑/[化合物(D)+下述鹼性化合物](莫耳比)=2.5~300。即,就感度、解析度的方面而言,莫耳比較佳為2.5以上,就抑制直至曝光後加熱處理為止的經時的抗蝕劑圖案的粗大所致的解析度降低的方面而言,較佳為300以下。酸產生劑/[化合物(D)+上述鹼性化合物](莫耳比)更佳為5.0~200,進而佳為7.0~150。 Further, when the composition of the present invention contains an acid generator, the ratio of the acid generator to the compound (D) used in the composition is preferably an acid generator / [compound (D) + the following basic compound] (Morbi) = 2.5~300. In other words, in terms of the sensitivity and the resolution, the molar ratio is preferably 2.5 or more, and the degree of resolution due to the coarseness of the resist pattern over time after the post-exposure heat treatment is suppressed. Good for 300 or less. The acid generator / [compound (D) + the above basic compound] (mole ratio) is more preferably 5.0 to 200, and further preferably 7.0 to 150.

除此以外,本發明的組成物中可使用者可列舉:日本專利特開2002-363146號公報的實施例中合成的化合物、及日本專利特開2007-298569號公報的段落0108中記載的化合物等。 In addition, the composition of the present invention can be exemplified by a compound synthesized in the examples of JP-A-2002-363146, and a compound described in paragraph 0108 of JP-A-2007-298569. Wait.

鹼性化合物亦可使用感光性的鹼性化合物。感光性的鹼性化合物例如可使用日本專利特表2003-524799號公報及「光聚合物科技期刊(J.Photopolym.Sci & Tech.)」(Vol.8,P.543-553 (1995))等中記載的化合物。 A photosensitive basic compound can also be used as the basic compound. For the photosensitive basic compound, for example, Japanese Patent Laid-Open Publication No. 2003-524799 and "J. Photopolym. Sci & Tech." (Vol. 8, P. 543-553) can be used. (1995)) A compound described in the above.

鹼性化合物的分子量通常為100~1500,較佳為150~1300,更佳為200~1000。 The molecular weight of the basic compound is usually from 100 to 1,500, preferably from 150 to 1300, more preferably from 200 to 1,000.

該些鹼性化合物可單獨使用一種,亦可組合使用兩種以上。 These basic compounds may be used alone or in combination of two or more.

於本發明的組成物含有鹼性化合物的情形時,以組成物的總固體成分為基準,其含量較佳為0.01質量%~8.0質量%,更佳為0.1質量%~5.0質量%,尤佳為0.2質量%~4.0質量%。 When the composition of the present invention contains a basic compound, the content thereof is preferably from 0.01% by mass to 8.0% by mass, more preferably from 0.1% by mass to 5.0% by mass, based on the total solid content of the composition. It is 0.2% by mass to 4.0% by mass.

鹼性化合物相對於光酸產生劑的莫耳比較佳為設定為0.01~10,更佳為設定為0.05~5,進而佳為設定為0.1~3。若過度增大該莫耳比,則有時感度及/或解析度降低。若過度減小該莫耳比,則可能於曝光與加熱(後烘烤)之間產生圖案的縮小。更佳為0.05~5,進而佳為0.1~3。再者,所謂上述莫耳比的光酸產生劑,是指以上述樹脂的重複單元(B)與上述樹脂可更含有的光酸產生劑的合計量為基準者。 The molar ratio of the basic compound to the photoacid generator is preferably from 0.01 to 10, more preferably from 0.05 to 5, and even more preferably from 0.1 to 3. If the molar ratio is excessively increased, the sensitivity and/or resolution may be lowered. If the molar ratio is excessively reduced, a reduction in pattern may occur between exposure and heating (post-baking). More preferably 0.05 to 5, and thus preferably 0.1 to 3. In addition, the photo-acid generator of the above-mentioned molar ratio is based on the total amount of the photo-acid generator which can be further contained in the repeating unit (B) of the above-mentioned resin and the above-mentioned resin.

[7]界面活性劑 [7] surfactants

本發明的感光化射線性或感放射線性樹脂組成物可更含有界面活性劑。該界面活性劑尤佳為氟系及/或矽系界面活性劑。 The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a surfactant. The surfactant is particularly preferably a fluorine-based and/or a lanthanide surfactant.

氟系及/或矽系界面活性劑例如可列舉:大日本油墨化學工業(股)製造的美佳法(Megafac)F176及美佳法(Megafac)R08、歐諾瓦(OMNOVA)公司製造的PF656及PF6320、特洛伊化學(Troy Chemical)(股)製造的特洛伊溶膠(Troy Sol)S-366、 住友3M(股)製造的弗拉德(Fluorad)FC430、以及信越化學工業(股)製造的聚矽氧烷聚合物KP-341。 Examples of the fluorine-based and/or lanthanide-based surfactants include Megafac F176 and Megafac R08 manufactured by Dainippon Ink Chemical Industry Co., Ltd., and PF656 and PF6320 manufactured by OMNOVA. Troy Sol S-366, manufactured by Troy Chemical Co., Ltd. Fluorad FC430 manufactured by Sumitomo 3M Co., Ltd., and polyoxyalkylene polymer KP-341 manufactured by Shin-Etsu Chemical Co., Ltd.

亦可使用氟系及/或矽系以外的界面活性劑。該界面活性劑例如可列舉:聚氧伸乙基烷基醚類及聚氧伸乙基烷基芳基醚類等陰離子系界面活性劑。 Surfactants other than fluorine and/or lanthanide may also be used. Examples of the surfactant include anionic surfactants such as polyoxyethylene ethyl ethers and polyoxyalkylene aryl ethers.

除此以外,亦可適當使用公知的界面活性劑。可使用的界面活性劑例如可列舉:美國專利2008/0248425A1號說明書的[0273]以後記載的界面活性劑。 Besides, a well-known surfactant can also be used suitably. The surfactant which can be used, for example, is a surfactant described in [0273] and later on the specification of US Pat. No. 2008/0248425A1.

界面活性劑可單獨使用一種,亦可組合使用兩種以上。 The surfactant may be used singly or in combination of two or more.

於本發明的組成物更含有界面活性劑的情形時,以組成物的總固體成分為基準,其使用量較佳為設定為0.0001質量%~2質量%,更佳為設定為0.001質量%~1質量%。 When the composition of the present invention further contains a surfactant, the amount of use of the composition is preferably from 0.0001% by mass to 2% by mass, more preferably 0.001% by mass based on the total solid content of the composition. 1% by mass.

[8]其他添加劑 [8] Other additives

本發明的組成物除了上述所說明的成分以外,亦可適當含有羧酸、羧酸鎓鹽、「國際光學工程學會會議記錄(Proceeding of The International Society for Optical.Engineering,Proceeding of SPIE)」(2724,355(1996))等中記載的分子量為3000以下的溶解抑制化合物、染料、塑化劑、光增感劑、光吸收劑、抗氧化劑等。 In addition to the components described above, the composition of the present invention may suitably contain a carboxylic acid, a carboxylic acid strontium salt, and "Proceeding of The International Society for Optical. Engineering (Proceeding of SPIE)" (2724). A dissolution inhibiting compound having a molecular weight of 3,000 or less as described in 355 (1996)), a dye, a plasticizer, a photosensitizer, a light absorbing agent, an antioxidant, and the like.

尤其為了提高性能,尤其可較佳地使用羧酸。羧酸較佳為苯甲酸、萘甲酸等芳香族羧酸。 In particular, in order to improve the performance, a carboxylic acid is particularly preferably used. The carboxylic acid is preferably an aromatic carboxylic acid such as benzoic acid or naphthoic acid.

組成物的總固體成分濃度中,羧酸的含量較佳為0.01質量%~10質量%,更佳為0.01質量%~5質量%,進而佳為0.01 質量%~3質量%。 The content of the carboxylic acid in the total solid content concentration of the composition is preferably 0.01% by mass to 10% by mass, more preferably 0.01% by mass to 5% by mass, and further preferably 0.01% by mass. Mass%~3 mass%.

就提高解析力的觀點而言,本發明的感光化射線性或感放射線性樹脂組成物較佳為以10nm~250nm的膜厚使用,更佳為以20nm~200nm的膜厚使用,進而佳為以30nm~100nm的膜厚使用。將組成物中的固體成分濃度設定於適當的範圍內而具有適當的黏度,提高塗佈性、製膜性,藉此可製成此膜厚。 The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is preferably used in a film thickness of 10 nm to 250 nm, more preferably in a film thickness of 20 nm to 200 nm, from the viewpoint of improving the resolution. It is used in a film thickness of 30 nm to 100 nm. The film thickness can be obtained by setting the solid content concentration in the composition to an appropriate range and having an appropriate viscosity to improve coatability and film formability.

本發明的感光化射線性或感放射線性樹脂組成物的固體成分濃度通常為1.0質量%~10質量%,較佳為2.0質量%~5.7質量%,更佳為2.0質量%~5.3質量%。藉由將固體成分濃度設定為上述範圍,可將抗蝕劑溶液均勻地塗佈於基板上,進而可形成線寬粗糙度優異的抗蝕劑圖案。其理由雖不明確,但可認為,藉由將固體成分濃度設定為10質量%以下、較佳為5.7質量%以下,而抑制抗蝕劑溶液中的原材料、特別是光酸產生劑的凝聚,結果可形成均勻的抗蝕劑膜。 The solid content concentration of the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is usually 1.0% by mass to 10% by mass, preferably 2.0% by mass to 5.7% by mass, and more preferably 2.0% by mass to 5.3% by mass. By setting the solid content concentration to the above range, the resist solution can be uniformly applied onto the substrate, and a resist pattern having excellent line width roughness can be formed. Though the reason for this is not clear, it is considered that the solid content concentration is 10% by mass or less, preferably 5.7% by mass or less, thereby suppressing aggregation of a material, particularly a photoacid generator, in the resist solution. As a result, a uniform resist film can be formed.

所謂固體成分濃度,是指除了溶劑以外的其他抗蝕劑成分的重量相對於感光化射線性或感放射線性樹脂組成物的總重量的重量百分率。 The solid content concentration refers to the weight percentage of the weight of the resist component other than the solvent to the total weight of the sensitizing ray-sensitive or radiation-sensitive resin composition.

本發明的感光化射線性或感放射線性樹脂組成物是將上述成分溶解於既定的有機溶劑、較佳為上述混合溶劑中,進行過濾器過濾後,塗佈於既定的支撐體(基板)上而使用。過濾器過濾時所用的過濾器較佳為孔徑為0.1μm以下、更佳為0.05μm以下、進而佳為0.03μm以下的聚四氟乙烯製、聚乙烯製、尼龍製 的過濾器。過濾器過濾時,例如可如日本專利特開2002-62667號公報般進行循環過濾,亦可將多種過濾器串聯或並聯來進行過濾。另外,亦可將組成物過濾多次。進而,亦可於過濾器過濾的前後對組成物進行脫氣處理等。 In the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention, the above-mentioned components are dissolved in a predetermined organic solvent, preferably in the above-mentioned mixed solvent, and filtered by a filter, and then applied to a predetermined support (substrate). And use. The filter used for the filtration of the filter is preferably made of polytetrafluoroethylene, polyethylene or nylon having a pore diameter of 0.1 μm or less, more preferably 0.05 μm or less, and still more preferably 0.03 μm or less. Filter. When the filter is filtered, for example, it can be circulated and filtered as in the case of JP-A-2002-62667, and a plurality of filters can be filtered in series or in parallel. Alternatively, the composition can be filtered multiple times. Further, the composition may be subjected to a degassing treatment or the like before and after the filter is filtered.

<圖案形成方法> <pattern forming method>

本發明是有關於一種使用上述本發明的組成物所形成的感光化射線性或感放射線性膜。另外,本發明的圖案形成方法包括對上述感光化射線性或感放射線性膜進行曝光、顯影的步驟。 The present invention relates to a sensitized ray-sensitive or radiation-sensitive film formed using the above-described composition of the present invention. Further, the pattern forming method of the present invention includes the step of exposing and developing the above-described sensitized ray-sensitive or radiation-sensitive film.

本發明的組成物典型而言是如以下般使用。即,典型而言,將本發明的組成物塗佈於基板等支撐體上而形成膜。該膜的厚度較佳為0.02μm~0.1μm。塗佈於基板上的方法較佳為旋轉塗佈,其轉速較佳為1000rpm~3000rpm。 The composition of the present invention is typically used as follows. That is, typically, the composition of the present invention is applied onto a support such as a substrate to form a film. The thickness of the film is preferably from 0.02 μm to 0.1 μm. The method of coating on the substrate is preferably spin coating, and the rotation speed thereof is preferably from 1,000 rpm to 3000 rpm.

該組成物例如是使用旋轉器及塗佈機等而塗佈於精密積體電路元件或壓印用模具等的製造等時所使用的基板(例如經矽/二氧化矽被覆、經氮化矽及鉻蒸鍍的石英基板等)上。其後,將其乾燥,形成感光化射線性或感放射線性的膜(以下亦稱為抗蝕劑膜)。再者,亦可預先塗設公知的抗反射膜。 The composition is, for example, a substrate (for example, a tantalum/yttria coating or a tantalum nitride) which is applied to a precision integrated circuit element, an imprint mold, or the like using a spinner, a coater, or the like. And chrome-deposited quartz substrate, etc.). Thereafter, it is dried to form a sensitized ray-sensitive or radiation-sensitive film (hereinafter also referred to as a resist film). Further, a known anti-reflection film may be applied in advance.

繼而,對上述感光化射線性或感放射線性膜照射光化射線或放射線,較佳為進行烘烤(通常為80℃~150℃、更佳為90℃~130℃)後,進行顯影。藉由進行烘烤,可獲得更良好的圖案。 Then, the actinic radiation or radiation sensitive film is irradiated with actinic rays or radiation, preferably after baking (usually 80 ° C to 150 ° C, more preferably 90 ° C to 130 ° C), and then developing. By baking, a better pattern can be obtained.

光化射線或放射線例如可列舉:紅外光、可見光、紫外光、遠紫外光、X射線及電子束。該些光化射線或放射線例如更 佳為具有250nm以下、特別是220nm以下的波長者。此種光化射線或放射線例如可列舉:KrF準分子雷射(248nm)、ArF準分子雷射(193nm)、F2準分子雷射(157nm)、X射線及電子束。較佳的光化射線或放射線例如可列舉:KrF準分子雷射、電子束、X射線及EUV光。更佳為電子束、X射線及EUV光。 Examples of actinic rays or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, X-ray, and electron beam. The actinic rays or radiation are more preferably, for example, those having a wavelength of 250 nm or less, particularly 220 nm or less. Examples of such actinic rays or radiation include KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 excimer laser (157 nm), X-ray, and electron beam. Preferred actinic rays or radiations include, for example, KrF excimer lasers, electron beams, X-rays, and EUV light. More preferred are electron beam, X-ray and EUV light.

即,本發明亦是有關於一種KrF準分子雷射、電子束、X射線或EUV光用(更佳為電子束、X射線或EUV光用)感光化射線性或感放射線性樹脂組成物。 That is, the present invention is also directed to a sensitized ray- or radiation-sensitive resin composition for KrF excimer laser, electron beam, X-ray or EUV light (more preferably for electron beam, X-ray or EUV light).

顯影步驟中,通常使用鹼性顯影液。 In the developing step, an alkaline developing solution is usually used.

鹼性顯影液例如可列舉含有以下化合物的鹼性水溶液:氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉及氨水等無機鹼類,乙胺及正丙胺等一級胺類,二乙胺及二正丁胺等二級胺類,三乙胺及甲基二乙胺等三級胺類,二甲基乙醇胺及三乙醇胺等醇胺類,氫氧化四甲基銨及氫氧化四乙基銨等四級銨鹽,或吡咯及哌啶等環狀胺類。 Examples of the alkaline developing solution include alkaline aqueous solutions containing the following compounds: inorganic bases such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, and aqueous ammonia; and primary amines such as ethylamine and n-propylamine. , secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcoholamines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide and hydrogen A quaternary ammonium salt such as tetraethylammonium or a cyclic amine such as pyrrole or piperidine.

鹼性顯影液中,亦可添加適當量的醇類及/或界面活性劑。 An appropriate amount of an alcohol and/or a surfactant may be added to the alkaline developer.

鹼性顯影液的濃度通常為0.1質量%~20質量%。鹼性顯影液的pH值通常為10.0~15.0。 The concentration of the alkaline developer is usually from 0.1% by mass to 20% by mass. The pH of the alkaline developer is usually from 10.0 to 15.0.

本發明的組成物亦可用於以下製程:於塗佈、製膜、曝光後,使用以有機溶劑作為主成分的顯影液進行顯影,獲得負型圖案。此種製程例如可使用日本專利特開2010-217884號公報中 記載的製程。 The composition of the present invention can also be used in the following processes: after coating, film formation, and exposure, development is carried out using a developer having an organic solvent as a main component to obtain a negative pattern. Such a process can be used, for example, in Japanese Patent Laid-Open Publication No. 2010-217884. Documented process.

有機系顯影液可使用:酯系溶劑(例如乙酸丁酯、乙酸乙酯等)、酮系溶劑(例如2-庚酮、環己酮等)、醇系溶劑、醯胺系溶劑、醚系溶劑等極性溶劑及烴系溶劑。有機系顯影液總體的含水率較佳為小於10質量%,更佳為實質上不含水分。 As the organic developing solution, an ester solvent (for example, butyl acetate or ethyl acetate), a ketone solvent (for example, 2-heptanone or cyclohexanone), an alcohol solvent, a guanamine solvent, or an ether solvent can be used. Equipolar solvent and hydrocarbon solvent. The organic developer solution preferably has a water content of less than 10% by mass, more preferably substantially no moisture.

有機系顯影液亦可含有鹼性化合物,鹼性化合物具體可列舉作為本發明的樹脂組成物可含有的鹼性化合物而記載的化合物。亦可進行將有機溶劑顯影與鹼性顯影組合的雙重顯影製程。 The organic developing solution may contain a basic compound, and the basic compound may specifically be a compound described as a basic compound which can be contained in the resin composition of the present invention. A dual development process in which organic solvent development and alkaline development are combined can also be performed.

再者,亦可使用本發明的組成物來製作壓印用模具,關於其詳細情況,例如請參照日本專利第4109085號公報、日本專利特開2008-162101號公報及「奈米壓印的基礎與技術開發.應用展開-奈米壓印的基板技術與最新的技術展開-編輯:平井義彥(前沿(Frontier)出版)」。 In addition, the embossing mold can be produced by using the composition of the present invention. For details, for example, refer to Japanese Patent No. 4109085, Japanese Patent Laid-Open No. 2008-162101, and "Basic of Nano Imprinting". And technology development. Application development - nano-imprinted substrate technology and the latest technology development - edit: Hirai Yoshihiko (Frontier published).

[實施例] [Examples]

以下,藉由實施例更詳細說明本發明的態樣,但本發明的內容不受該實施例的限定。 Hereinafter, the aspects of the present invention will be described in more detail by way of examples, but the contents of the present invention are not limited by the examples.

[合成例1:樹脂(Aa-2)] [Synthesis Example 1: Resin (Aa-2)]

依照下述流程來合成樹脂(Aa-2)。 The resin (Aa-2) was synthesized in accordance with the following procedure.

使0.54g的化合物(1)、19.77g的化合物(2)及0.69g的聚合起始劑V-601(和光純藥工業(股)製造)溶解於92.09g的環己酮中。於反應容器中加入23.02g的環己酮,於氮氣環境下、85℃的體系中,滴加4小時。用2小時將反應溶液加熱攪拌後,將其放置冷卻至室溫為止。 0.54 g of the compound (1), 19.77 g of the compound (2), and 0.69 g of a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) were dissolved in 92.09 g of cyclohexanone. 23.02 g of cyclohexanone was added to the reaction vessel, and the mixture was added dropwise for 4 hours under a nitrogen atmosphere at 85 °C. After the reaction solution was heated and stirred for 2 hours, it was left to cool to room temperature.

將上述反應溶液滴加至1350g的庚烷/乙酸乙酯=8/2中,使聚合物沈澱,進行過濾。使用400g的庚烷/乙酸乙酯=8/2進行經過濾的固體的清洗。其後,對清洗後的固體進行減壓乾燥,獲得9.55g的樹脂(樹脂(Aa-2))。 The above reaction solution was added dropwise to 1350 g of heptane / ethyl acetate = 8/2, and the polymer was precipitated and filtered. The filtered solid was washed with 400 g of heptane / ethyl acetate = 8/2. Thereafter, the washed solid was dried under reduced pressure to obtain 9.55 g of a resin (resin (Aa-2)).

對該樹脂(Aa-2)使用GPC(東曹股份有限公司製造;HLC-8120;Tsk gel Multipore HXL-M),使用THF作為溶劑來測定重量平均分子量及分散度。另外,使用核磁共振(Nuclear Magnetic Resonance,NMR)(布魯克-拜厄斯賓(Bruker-Biospin)股份有限公司製造;AVANCEIII400型)以1H-NMR或13C-NMR來算出組成比。將其結果示於表1中。 GPC (manufactured by Tosoh Corporation; HLC-8120; Tsk gel Multipore HXL-M) was used for the resin (Aa-2), and weight average molecular weight and dispersity were measured using THF as a solvent. Further, the composition ratio was calculated by 1 H-NMR or 13 C-NMR using Nuclear Magnetic Resonance (NMR) (manufactured by Bruker-Biospin Co., Ltd.; AVANCE III400 type). The results are shown in Table 1.

[其他樹脂(Aa)] [Other Resin (Aa)]

依照與合成例1中所述的方法相同的方法來合成上文所列舉的樹脂(Aa-1)、樹脂(Aa-3)~樹脂(Aa-36)。進而,作為比較用,合成以下所示的樹脂(Aa'-1)及樹脂(Aa'-2)。另外,關於該些樹脂,利用與合成例1中所述的方法相同的方法來測定重量 平均分子量、分散度及組成比。將其結果示於表1中。 The above-exemplified resin (Aa-1), resin (Aa-3) to resin (Aa-36) were synthesized in the same manner as in the method described in Synthesis Example 1. Further, as a comparison, the resin (Aa '-1) and the resin (Aa' -2) synthesized as shown below. Further, with respect to these resins, the weight average molecular weight, the dispersion degree, and the composition ratio were measured by the same method as the method described in Synthesis Example 1. The results are shown in Table 1.

[合成例2:樹脂(Ab-289)] [Synthesis Example 2: Resin (Ab-289)]

使46.50g的化合物(6)溶解於263.5g的正己烷中,添加87.19g的環己醇、46.50g的無水硫酸鎂、4.81g的10-樟腦磺酸,於室溫下攪拌6小時。添加10.49g的三乙胺,攪拌10分鐘後,過濾而去除固體。添加400g的乙酸乙酯,利用200g的離子交換水將有機層清洗5次後,以無水硫酸鎂進行乾燥,將溶劑蒸餾去除,獲得含有化合物(7)的溶液116.27g。 46.50 g of the compound (6) was dissolved in 263.5 g of n-hexane, and 87.19 g of cyclohexanol, 46.50 g of anhydrous magnesium sulfate, and 4.81 g of 10-camphorsulfonic acid were added, and the mixture was stirred at room temperature for 6 hours. 10.49 g of triethylamine was added, and after stirring for 10 minutes, it was filtered to remove a solid. 400 g of ethyl acetate was added, and the organic layer was washed five times with 200 g of ion-exchanged water, and then dried over anhydrous magnesium sulfate, and the solvent was distilled off to obtain 116.27 g of a solution containing the compound (7).

於含有化合物(7)的溶液41.19g中添加8.80g的乙醯氯,於室溫下攪拌2小時,獲得含有化合物(8)的溶液49.99g。 8.80 g of ethyl hydrazine chloride was added to 41.19 g of the solution containing the compound (7), and the mixture was stirred at room temperature for 2 hours to obtain 49.99 g of a solution containing the compound (8).

使7.40g的化合物(9)溶解於79.93g的脫水四氫呋喃中,添加7.40g的無水硫酸鎂、60.89g的三乙胺,於氮氣環境下攪拌。冷卻至0℃,滴加49.99g的含有化合物(8)的溶液,於室溫下攪拌3小時後,進行過濾而去除固體。添加400g的乙酸乙酯,利用200g的離子交換水將有機層清洗5次後,利用無水硫酸鎂進 行乾燥,將溶劑蒸餾去除。利用管柱層析儀進行分離純化,獲得23.91g的化合物(10)。 7.40 g of the compound (9) was dissolved in 79.93 g of dehydrated tetrahydrofuran, and 7.40 g of anhydrous magnesium sulfate and 60.89 g of triethylamine were added, and the mixture was stirred under a nitrogen atmosphere. After cooling to 0 ° C, 49.99 g of a solution containing the compound (8) was added dropwise, and the mixture was stirred at room temperature for 3 hours, and then filtered to remove a solid. 400 g of ethyl acetate was added, and the organic layer was washed 5 times with 200 g of ion-exchanged water, and then dried with anhydrous magnesium sulfate. The line was dried and the solvent was distilled off. Separation and purification were carried out using a column chromatography to obtain 23.91 g of Compound (10).

使6.61g的化合物(11)(50.00質量%的環己酮溶液)、6.31g的化合物(10)、0.35g的聚合起始劑V-601(和光純藥工業(股)製造)溶解於32.10g的環己酮中。於反應容器中加入19.07g的環己酮,於氮氣環境下、85℃的體系中,滴加4小時。用2小時將反應溶液加熱攪拌後,將其放置冷卻至室溫為止。 6.61 g of the compound (11) (50.00% by mass of a cyclohexanone solution), 6.31 g of the compound (10), and 0.35 g of a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) were dissolved in 32.10. g in cyclohexanone. 19.07 g of cyclohexanone was added to the reaction vessel, and the mixture was added dropwise for 4 hours under a nitrogen atmosphere at 85 °C. After the reaction solution was heated and stirred for 2 hours, it was left to cool to room temperature.

將上述反應溶液滴加至450g的庚烷/乙酸乙酯=9/1(質量比)中,使聚合物沈澱,進行過濾。使用200g的庚烷/乙酸乙酯=9/1(質量比)來進行經過濾的固體的清洗。其後,對清洗後的固體進行減壓乾燥,獲得4.90g的樹脂(Ab-289)。 The above reaction solution was added dropwise to 450 g of heptane / ethyl acetate = 9 / 1 (mass ratio), and the polymer was precipitated and filtered. The washing of the filtered solid was carried out using 200 g of heptane / ethyl acetate = 9 / 1 (mass ratio). Thereafter, the washed solid was dried under reduced pressure to obtain 4.90 g of a resin (Ab-289).

[其他樹脂(Ab)] [Other Resins (Ab)]

自上文所列舉的樹脂(Ab-1)~樹脂(Ab-312)中,利用與合成例2中所述的方法相同的方法來合成表2中所示的各樹脂。進而,作為比較用,合成以下所示的樹脂(Ab'-1)。另外,關於該些樹脂,利用與合成例1中所述的方法相同的方法來測定重量平均分子量、分散度及組成比。將其結果示於表2中。 From the resin (Ab-1) to the resin (Ab-312) enumerated above, each of the resins shown in Table 2 was synthesized by the same method as that described in Synthesis Example 2. Further, for comparison, the resin (Ab'-1) shown below was synthesized. Further, with respect to these resins, the weight average molecular weight, the dispersion degree, and the composition ratio were measured by the same method as the method described in Synthesis Example 1. The results are shown in Table 2.

[化174] [174]

[光酸產生劑] [Photoacid generator]

光酸產生劑是自上文所列舉的酸產生劑z1~酸產生劑z143中 適當選擇使用。 The photoacid generator is from the acid generator z1 to acid generator z143 listed above. Choose the right use.

[鹼性化合物] [alkaline compound]

鹼性化合物是使用下述化合物(N-1)~化合物(N-10)的任一種。 The basic compound is any one of the following compounds (N-1) to (N-10).

再者,上述化合物(N-7)相當於上述化合物(PA),是根據日本專利特開2006-330098號公報的[0354]的記載來合成。 In addition, the above-mentioned compound (N-7) corresponds to the above-mentioned compound (PA), and is synthesized according to the description of [0354] of JP-A-2006-330098.

[界面活性劑] [Surfactant]

界面活性劑是使用下述W-1~W-4。 For the surfactant, the following W-1 to W-4 were used.

W-1:美佳法(Megafac)R08(大日本油墨化學工業(股)製造;氟及矽系) W-1: Megafac R08 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.; fluorine and lanthanide)

W-2:聚矽氧烷聚合物KP-341(信越化學工業(股)製造; 矽系) W-2: Polyoxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.; 矽)

W-3:特洛伊溶膠(Troy Sol)S-366(特洛伊化學(Troy Chemical)(股)製造;氟系) W-3: Troy Sol S-366 (manufactured by Troy Chemical Co., Ltd.; fluorine system)

W-4:PF6320(歐諾瓦(OMNOVA)公司製造;氟系) W-4: PF6320 (manufactured by OMNOVA; fluorine)

<電子束(EB)曝光>(實施例1A~實施例42A、比較例1A~比較例4A) <Electron beam (EB) exposure> (Examples 1A to 42A, Comparative Example 1A to Comparative Example 4A)

(1)感光化射線性或感放射線性樹脂組成物的塗液製備及塗設 (1) Preparation and coating of coating liquid for sensitizing ray-sensitive or radiation-sensitive resin composition

利用孔徑為0.1μm的薄膜過濾器對具有下表所示的組成的固體成分濃度為3質量%的塗液組成物進行微孔過濾,獲得感光化射線性或感放射線性樹脂組成物(抗蝕劑組成物)溶液。 The coating liquid composition having a solid content concentration of 3% by mass having the composition shown in the following table was subjected to microfiltration using a membrane filter having a pore size of 0.1 μm to obtain a sensitized ray-sensitive or radiation-sensitive resin composition (resistance Agent composition) solution.

使用東京電子(Tokyo Electron)製造的旋轉塗佈機Mark8,將該感光化射線性或感放射線性樹脂組成物塗佈於預先實施了六甲基二矽氮烷(Hexamethyldisilazane,HMDS)處理的6吋Si晶圓上,於100℃下於熱板上乾燥60秒鐘,獲得膜厚為100nm的抗蝕劑膜。 The sensitizing ray-sensitive or radiation-sensitive resin composition was applied to 6 预先 previously treated with Hexamethyldisilazane (HMDS) using a spin coater Mark 8 manufactured by Tokyo Electron. The Si wafer was dried on a hot plate at 100 ° C for 60 seconds to obtain a resist film having a film thickness of 100 nm.

(2)EB曝光及顯影 (2) EB exposure and development

使用電子束描畫裝置(日立製作所(股)製造,HL750,加速電壓為50KeV)對上述(1)中所得的塗佈有抗蝕劑膜的晶圓進行圖案照射。此時,以形成1:1的線與間隙的方式進行描畫。電子束描畫後,於熱板上於100℃下進行90秒鐘加熱後,使用2.38質量%的氫氧化四甲基銨(TMAH)水溶液浸漬60秒鐘後,以水 淋洗30秒鐘。其後,使晶圓以4000rpm的轉速旋轉30秒鐘後,於95℃下進行60秒鐘加熱,藉此獲得線寬為100nm的1:1線與間隙圖案的抗蝕劑圖案。 The resist film-coated wafer obtained in the above (1) was subjected to pattern irradiation using an electron beam drawing apparatus (manufactured by Hitachi, Ltd., HL750, acceleration voltage: 50 keV). At this time, drawing is performed in such a manner as to form a line and a gap of 1:1. After electron beam drawing, it was heated on a hot plate at 100 ° C for 90 seconds, and then impregnated with a 2.38 mass % aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds. Rinse for 30 seconds. Thereafter, the wafer was rotated at 4000 rpm for 30 seconds, and then heated at 95 ° C for 60 seconds, thereby obtaining a 1:1 line and gap pattern resist pattern having a line width of 100 nm.

(3)抗蝕劑圖案的評價 (3) Evaluation of resist pattern

(3-1)感度 (3-1) Sensitivity

將解析線寬為100nm的線/間隙=1:1的圖案時的照射能量作為感度(Eop)。該值越小表示性能越良好。 The irradiation energy when a line having a line width of 100 nm and a line of gap = 1:1 was analyzed was used as the sensitivity (Eop). The smaller the value, the better the performance.

(3-2)圖案形狀 (3-2) pattern shape

使用掃描式電子顯微鏡(日立製作所(股)製造,S-4300)對顯示出上述感度的曝光量下的線寬為100nm的線:間隙=1:1的圖案的剖面形狀進行觀察,進行下述5等級評價。 The scanning electron microscope (manufactured by Hitachi, Ltd., S-4300) was used to observe the cross-sectional shape of a line having a line width of 100 nm and a gap of 1:1 at an exposure amount showing the above sensitivity, and the following is performed. 5 rating evaluation.

A:無橋接 A: no bridge

B:A與C之間 B: between A and C

C:稍有橋接 C: Slightly bridged

D:C與E之間 D: between C and E

E:橋接 E: Bridge

(3-3)膜薄化 (3-3) Thin film

藉由下式來評價膜薄化。膜薄化率(%)越小,意味著圖案的殘膜越良好,解析性越優異。 Film thinning was evaluated by the following formula. The smaller the film thinning ratio (%), the better the residual film of the pattern and the more excellent the resolution.

膜薄化率(%)=(塗佈膜厚100nm-圖案高度)/塗佈膜厚100nm×100 Film thinning rate (%) = (coating film thickness: 100 nm - pattern height) / coating film thickness: 100 nm × 100

A:小於5.0% A: less than 5.0%

B:5.0%以上、小於10.0% B: 5.0% or more and less than 10.0%

C:10.0%以上、小於15.0% C: 10.0% or more and less than 15.0%

D:15.0%以上、小於20.0% D: 15.0% or more and less than 20.0%

E:20.0%以上 E: 20.0% or more

(3-4)LER (3-4) LER

使用掃描式電子顯微鏡(日立製作所(股)製造,S-9260)來觀察上述100nm線圖案(線:間隙=1:1)。繼而,對其長度方向50μm中所含的等間隔的30點測定應存在邊緣(edge)的基準線與實際的邊緣之間的距離。繼而,求出該距離的標準偏差,算出3σ。然後,將該3σ作為「LER(nm)」。 The above 100 nm line pattern (line: gap = 1:1) was observed using a scanning electron microscope (manufactured by Hitachi, Ltd., S-9260). Then, the distance between the reference line where the edge should exist and the actual edge should be measured at 30 points which are equally spaced in the longitudinal direction of 50 μm. Then, the standard deviation of the distance is obtained, and 3σ is calculated. Then, the 3σ is referred to as "LER(nm)".

<極紫外線(EUV)曝光>(實施例1B~實施例42B、比較例1B~比較例4B) <Extreme ultraviolet (EUV) exposure> (Examples 1B to 42B, Comparative Example 1B to Comparative Example 4B)

(1)感光化射線性或感放射線性樹脂組成物的塗液製備及塗設 (1) Preparation and coating of coating liquid for sensitizing ray-sensitive or radiation-sensitive resin composition

利用孔徑為0.05μm的薄膜過濾器對具有下表所示的組成的固體成分濃度為1.5質量%的塗液組成物進行微孔過濾,獲得感光化射線性或感放射線性樹脂組成物(抗蝕劑組成物)溶液。 The coating composition having a solid content concentration of 1.5% by mass having the composition shown in the following table was subjected to microfiltration using a membrane filter having a pore size of 0.05 μm to obtain a sensitized ray-sensitive or radiation-sensitive resin composition (resistance Agent composition) solution.

使用東京電子(Tokyo Electron)製造的旋轉塗佈機Mark8,將該感光化射線性或感放射線性樹脂組成物塗佈於預先實施了六甲基二矽氮烷(HMDS)處理的6吋Si晶圓上,於100℃ 下於熱板上乾燥60秒鐘,獲得膜厚為50nm的抗蝕劑膜。 The sensitizing ray-sensitive or radiation-sensitive resin composition was applied to a 6 吋 Si crystal previously treated with hexamethyldiaziridine (HMDS) using a spin coater Mark 8 manufactured by Tokyo Electron Co., Ltd. On the circle, at 100 ° C The film was dried on a hot plate for 60 seconds to obtain a resist film having a film thickness of 50 nm.

(2)EUV曝光及顯影 (2) EUV exposure and development

對上述(1)中所得的塗佈有抗蝕劑膜的晶圓使用EUV曝光裝置(愛賽特(Exitech)公司製造,微曝光工具(Micro Exposure Tool),數值孔徑(Numerical Aperture,NA)為0.3,四極(Quadrupole),外σ(outer sigma)為0.68,內σ(inner sigma)為0.36),使用曝光遮罩(線/間隙=1/1)進行圖案曝光。曝光後,於熱板上於100℃下進行90秒鐘加熱後,使用2.38質量%的氫氧化四甲基銨(TMAH)水溶液浸漬60秒鐘後,以水淋洗30秒鐘。其後,使晶圓以4000rpm的轉速旋轉30秒鐘後,於95℃下進行60秒鐘烘烤,藉此獲得線寬為50nm的1:1線與間隙圖案的抗蝕劑圖案。 The resist film-coated wafer obtained in the above (1) was subjected to an EUV exposure apparatus (manufactured by Exetech Co., Ltd., Micro Exposure Tool, and Numerical Aperture (NA)). 0.3, Quadrupole, outer σ (outer sigma) is 0.68, inner σ (inner sigma) is 0.36), and exposure exposure is performed using an exposure mask (line/gap=1/1). After the exposure, the film was heated at 100 ° C for 90 seconds on a hot plate, and then immersed in a 2.38 mass % aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds, and then rinsed with water for 30 seconds. Thereafter, the wafer was rotated at 4000 rpm for 30 seconds, and then baked at 95 ° C for 60 seconds, thereby obtaining a 1:1 line and gap pattern resist pattern having a line width of 50 nm.

(3)抗蝕劑圖案的評價 (3) Evaluation of resist pattern

(3-1)感度 (3-1) Sensitivity

將解析線寬為50nm的線/間隙=1:1的圖案時的照射能量作為感度(Eop)。該值越小表示性能越良好。 The irradiation energy at the time of analyzing a pattern having a line width of 50 nm of line/gap = 1:1 was taken as the sensitivity (Eop). The smaller the value, the better the performance.

(3-2)圖案形狀 (3-2) pattern shape

使用掃描式電子顯微鏡(日立製作所(股)製造,S-4300)對顯示出上述感度的曝光量下的線寬為50nm的線:間隙=1:1的圖案的剖面形狀進行觀察,進行下述5等級評價。 The scanning electron microscope (manufactured by Hitachi, Ltd., S-4300) was used to observe the cross-sectional shape of a line having a line width of 50 nm and a gap of 1:1 at an exposure amount showing the above sensitivity, and the following is performed. 5 rating evaluation.

A:無橋接 A: no bridge

B:A與C之間 B: between A and C

C:稍有橋接 C: Slightly bridged

D:C與E之間 D: between C and E

E:橋接 E: Bridge

(3-3)膜薄化 (3-3) Thin film

藉由下式來評價膜薄化。膜薄化率(%)越小意味著圖案的殘膜越良好,解析性越優異。 Film thinning was evaluated by the following formula. The smaller the film thinning ratio (%), the better the residual film of the pattern and the more excellent the resolution.

膜薄化率(%)=(塗佈膜厚50nm-圖案高度)/塗佈膜厚50nm×100 Film thinning rate (%) = (coating film thickness: 50 nm - pattern height) / coating film thickness: 50 nm × 100

A:小於5.0% A: less than 5.0%

B:5.0%以上、小於10.0% B: 5.0% or more and less than 10.0%

C:10.0%以上、小於15.0% C: 10.0% or more and less than 15.0%

D:15.0%以上、小於20.0% D: 15.0% or more and less than 20.0%

E:20.0%以上 E: 20.0% or more

(3-4)LER (3-4) LER

使用掃描式電子顯微鏡(日立製作所(股)製造,S-9260)對上述50nm的線圖案(線:間隙=1:1)進行觀察。繼而,對其長度方向50μm中所含的等間隔的30點測定應存在邊緣的基準線與實際的邊緣之間的距離。繼而,求出該距離的標準偏差,算出3σ。然後,將該3σ作為「LER(nm)」。 The above 50 nm line pattern (line: gap = 1:1) was observed using a scanning electron microscope (manufactured by Hitachi, Ltd., S-9260). Then, the distance between the reference line of the edge and the actual edge should be measured at 30 points which are equally spaced in the longitudinal direction of 50 μm. Then, the standard deviation of the distance is obtained, and 3σ is calculated. Then, the 3σ is referred to as "LER(nm)".

<顯影缺陷>(實施例1C~實施例42C、比較例1C~ 比較例4C) <Development defect> (Example 1C to Example 42C, Comparative Example 1C~ Comparative Example 4C)

利用東京電子(Tokyo Electron)製造的旋轉塗佈機Mark8,將如上述般製備的正型抗蝕劑液均勻塗佈於塗佈有60nm的抗反射膜(布魯爾科技(Brewer Science)製造,DUV44)的基板上,於130℃下進行60秒鐘加熱乾燥,形成平均膜厚60nm的正型抗蝕劑膜。對該抗蝕劑膜使用KrF準分子雷射掃描器(ASML製造,PAS5500/850C,波長為248nm),對晶圓整個面進行以15mm見方的面積將開放式框架(open frame)的曝光部與未曝光部交替曝光的黑白格子旗(check flag)曝光(曝光條件:NA=0.80、σ=0.89、20mJ)。照射後於110℃下進行60秒鐘烘烤,使用2.38質量%的氫氧化四甲基銨(TMAH)水溶液浸漬60秒鐘後,以水淋洗30秒鐘並進行乾燥。利用下述方法對所得的圖案進行評價。 The positive resist liquid prepared as described above was uniformly applied to an antireflection film coated with 60 nm (manufactured by Brewer Science) using a spin coater Mark8 manufactured by Tokyo Electron. The substrate of DUV44) was dried by heating at 130 ° C for 60 seconds to form a positive resist film having an average film thickness of 60 nm. A KrF excimer laser scanner (manufactured by ASML, PAS5500/850C, wavelength: 248 nm) was used for the resist film, and the exposed portion of the open frame was opened on the entire surface of the wafer at a surface area of 15 mm square. Black and white check flag exposures of the unexposed portions alternately exposed (exposure conditions: NA = 0.80, σ = 0.89, 20 mJ). After the irradiation, the mixture was baked at 110 ° C for 60 seconds, and after being immersed for 60 seconds with a 2.38 mass % aqueous solution of tetramethylammonium hydroxide (TMAH), it was rinsed with water for 30 seconds and dried. The obtained pattern was evaluated by the following method.

另外,測定抗蝕劑膜的膜厚成為零(zero)的感度E0Further, the sensitivity E 0 of the film thickness of the resist film was measured to be zero.

於上述實效感度E0下,於晶圓面內曝光78處的遮罩尺寸為0.15μm的圖案。藉由科磊(KLA-Tencor)(股)製造的KLA-2360對該所得的帶有圖案的晶圓測定顯影缺陷數。此時的檢查面積共計為205cm2,畫素(pixel)尺寸為0.25μm,臨限值(threshold)=30,檢查光是使用可見光。將所得的數值除以檢查面積所得的值評價為缺陷數(個/cm2)。將值小於1.0的情況評價為A,將1.0以上、小於3.0的情況評價為B,將3.0以上、小於5.0的情況評價為C,將5.0以上、小於10.0的情況評價為D,將10.0以上的情況評價為E。值越小表示性能越良好。將結果示於 表5中。 At the above-described effective sensitivity E 0 , the mask size of the mask at 78 in-plane exposure was 0.15 μm. The resulting patterned wafer was measured for the number of development defects by KLA-2360 manufactured by KLA-Tencor Co., Ltd. The inspection area at this time was 205 cm 2 in total, the pixel size was 0.25 μm, the threshold was 30, and the inspection light was visible light. The value obtained by dividing the obtained value by the inspection area was evaluated as the number of defects (number/cm 2 ). The case where the value is less than 1.0 is evaluated as A, the case where 1.0 or more and less than 3.0 is evaluated as B, the case where 3.0 or more and less than 5.0 is evaluated as C, and the case where 5.0 or more and less than 10.0 is evaluated as D, and 10.0 or more is evaluated. The situation is evaluated as E. A smaller value indicates better performance. The results are shown in Table 5.

Claims (16)

一種樹脂組成物,其具有感光化射線性或感放射線性,且含有樹脂(Aa)、樹脂(Ab)及藉由光化射線或放射線的照射而產生酸的化合物,上述樹脂(Aa)含有重複單元(c),上述重複單元(c)具有至少2個以上的通式(KA-1)或通式(KB-1)所表示的結構中的-COO-所表示的基團,上述樹脂(Ab)含有通式(A)所表示的重複單元、且對顯影液的溶解性因酸的作用而變化, 通式(KA-1)中,Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基;於Zka存在多個的情形時,多個Zka可相同亦可不同,Zka彼此亦可連結而形成環;nka表示0~10的整數;Q表示與式中的原子一起形成內酯環所必需的原子組群;通式(KB-1)中,Xkb1及Xkb2分別獨立地表示拉電子基;nkb及nkb'分別獨立地表示0或1; Rkb1、Rkb2、Rkb3及Rkb4分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基;Rkb1、Rkb2及Xkb1的至少2個亦可相互連結而形成環,Rkb3、Rkb4及Xkb2的至少2個亦可相互連結而形成環; 式中,R21、R22及R23分別獨立地表示氫原子、烷基、鹵素原子、氰基或烷氧基羰基;其中,R22亦可與Ar2鍵結而形成環,此時的R22表示單鍵或伸烷基;X2表示單鍵、-COO-或-CONR30-,R30表示氫原子或烷基;L2表示單鍵或伸烷基;Ar2表示(n+1)價的芳香環基,於與R22鍵結而形成環的情形時表示(n+2)價的芳香環基;n表示1~4的整數。 A resin composition comprising a sensitizing ray or a radiation sensation and comprising a resin (Aa), a resin (Ab), and a compound which generates an acid by irradiation with actinic rays or radiation, wherein the resin (Aa) contains a repeat In the unit (c), the repeating unit (c) has at least two or more groups represented by -COO- in the structure represented by the formula (KA-1) or the formula (KB-1), and the above resin ( Ab) contains a repeating unit represented by the formula (A), and the solubility in the developer changes depending on the action of the acid. In the formula (KA-1), Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group or an electron-withdrawing group; when a plurality of Z ka are present, A plurality of Z ka may be the same or different, and Z ka may be bonded to each other to form a ring; nka represents an integer of 0 to 10; and Q represents an atomic group necessary for forming a lactone ring together with an atom in the formula; In KB-1), X kb1 and X kb2 each independently represent a pull electron group; nkb and nkb' respectively represent 0 or 1; R kb1 , R kb2 , R kb3 and R kb4 each independently represent a hydrogen atom or an alkane; a group, a cycloalkyl group, an aryl group or an electron-donating group; at least two of R kb1 , R kb2 and X kb1 may be linked to each other to form a ring, and at least two of R kb3 , R kb4 and X kb2 may be linked to each other. Forming a ring; In the formula, R 21 , R 22 and R 23 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group; wherein R 22 may also bond with Ar 2 to form a ring, at this time R 22 represents a single bond or an alkylene group; X 2 represents a single bond, -COO- or -CONR 30 -, R 30 represents a hydrogen atom or an alkyl group; L 2 represents a single bond or an alkyl group; and Ar 2 represents (n+) 1) The aromatic cyclic group of a valence represents an (n+2)-valent aromatic ring group when bonded to R 22 to form a ring; n represents an integer of 1 to 4. 如申請專利範圍第1項所述的樹脂組成物,其中上述樹脂(Aa)所含有的重複單元(c)包含下述通式(KY-3)所表示的結 構, 通式(KY-3)中,Rs表示鏈狀或環狀伸烷基,於存在多個的情形時,可相同亦可不同;Ls表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵,於存在多個的情形時,可相同亦可不同;ns表示-(Rs-Ls)-所表示的連結基的重複數,且表示0~5的整數;Lky表示伸烷基、氧原子或硫原子;Zka表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基或拉電子基;於Zka存在多個的情形時,多個Zka可相同亦可不同,Zka彼此亦可連結而形成環;nka表示0~10的整數;Rkb1及Rkb2分別獨立地表示氫原子、烷基、環烷基、芳基或拉電子基,Rkb1、Rkb2及Rky5的至少2個亦可相互連結而形成環;nkb表示0或1; Rky5表示拉電子基。 The resin composition according to claim 1, wherein the repeating unit (c) contained in the resin (Aa) contains a structure represented by the following formula (KY-3). In the formula (KY-3), Rs represents a chain or cyclic alkyl group, and when it is plural, it may be the same or different; Ls represents a single bond, an ether bond, an ester bond, a guanamine bond, or an amine. The urethane bond or the urea bond may be the same or different when there are a plurality of cases; ns represents the number of repeats of the linker represented by -(Rs-Ls)-, and represents an integer of 0-5; ky represents alkylene, oxygen atom or sulfur atom; Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, an acyl group, an aryl group, a lactone ring group or electron withdrawing group; in the presence of a plurality of Z ka In the case, a plurality of Z ka may be the same or different, and Z ka may be linked to each other to form a ring; nka represents an integer of 0 to 10; and R kb1 and R kb2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, An aryl group or a pendant electron group, at least two of R kb1 , R kb2 and R ky5 may be bonded to each other to form a ring; nkb represents 0 or 1; and R ky5 represents an electron-withdrawing group. 如申請專利範圍第1項所述的樹脂組成物,其中上述樹脂(Aa)更含有重複單元(Aa3),上述重複單元(Aa3)具有選自由氟原子、含氟原子的基團、含矽原子的基團、碳數6以上的烷基、碳數5以上的環烷基、碳數6以上的芳基及碳數7以上的芳烷基所組成的組群中的一個以上的基團。 The resin composition according to claim 1, wherein the resin (Aa) further contains a repeating unit (Aa3) having a group selected from a fluorine atom, a fluorine atom, and a germanium atom. One or more groups of the group consisting of an alkyl group having 6 or more carbon atoms, a cycloalkyl group having 5 or more carbon atoms, an aryl group having 6 or more carbon atoms, and an aralkyl group having 7 or more carbon atoms. 如申請專利範圍第1項所述的樹脂組成物,其中上述樹脂(Aa)更含有下述通式(Aa4)所表示的重複單元, 通式(aa2-1)中,Rb表示氫原子、烷基或鹵素原子;S1a表示取代基,於存在多個的情形時分別獨立;p表示0~5的整數。 The resin composition according to claim 1, wherein the resin (Aa) further contains a repeating unit represented by the following formula (Aa4), In the formula (aa2-1), Rb represents a hydrogen atom, an alkyl group or a halogen atom; S 1a represents a substituent, and when it is plural, it is independent; and p represents an integer of 0-5. 如申請專利範圍第1項所述的樹脂組成物,其中上述樹脂(Aa)更含有具有藉由酸的作用而分解的基團的重複單元。 The resin composition according to claim 1, wherein the resin (Aa) further contains a repeating unit having a group decomposed by the action of an acid. 如申請專利範圍第5項所述的樹脂組成物,其中具有藉由酸的作用而分解的基團的上述重複單元是由下述通式(Aa1)或通 式(Aa2)所表示, 通式(Aa1)中,R'表示氫原子或烷基;L表示單鍵或二價連結基;R1表示氫原子或一價取代基;R2表示一價取代基;R1與R2亦可相互鍵結而與式中的氧原子一起形成環;R3表示氫原子、烷基或環烷基;通式(Aa2)中,Ra表示氫原子、烷基、氰基或鹵素原子;L1表示單鍵或二價連結基;R1及R2分別獨立地表示烷基;R11及R12分別獨立地表示烷基,R13表示氫原子或烷基;R11、R12及R13的任意2個亦可相互連結而形成環。 The resin composition according to claim 5, wherein the repeating unit having a group decomposed by an action of an acid is represented by the following formula (Aa1) or (Aa2), In the formula (Aa1), R' represents a hydrogen atom or an alkyl group; L represents a single bond or a divalent linking group; R 1 represents a hydrogen atom or a monovalent substituent; R 2 represents a monovalent substituent; R 1 and R 2 Further, they may be bonded to each other to form a ring together with an oxygen atom in the formula; R 3 represents a hydrogen atom, an alkyl group or a cycloalkyl group; in the formula (Aa2), Ra represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom; L 1 represents a single bond or a divalent linking group; R 1 and R 2 each independently represent an alkyl group; R 11 and R 12 each independently represent an alkyl group, R 13 represents a hydrogen atom or an alkyl group; R 11 and R 12 and Any two of R 13 may be connected to each other to form a ring. 如申請專利範圍第1項所述的樹脂組成物,其中上述樹脂(Ab)至少含有下述式(Ab1)或式(Ab2)所表示的重複單元作為通式(A)所表示的重複單元, 式(A2)中,R23表示氫原子、烷基、鹵素原子、氰基或烷氧基羰基。 The resin composition according to claim 1, wherein the resin (Ab) contains at least a repeating unit represented by the following formula (Ab1) or formula (Ab2) as a repeating unit represented by the formula (A), In the formula (A2), R 23 represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group. 如申請專利範圍第1項所述的樹脂組成物,其中以上述組成物中的總固體成分為基準,上述樹脂(Aa)的含有率為0.01質量%~30質量%的範圍。 The resin composition according to the first aspect of the invention, wherein the content of the resin (Aa) is in the range of 0.01% by mass to 30% by mass based on the total solid content of the composition. 如申請專利範圍第1項所述的樹脂組成物,其中以上述組成物中的總固體成分為基準,上述樹脂(Aa)的含有率為0.01質量%~20質量%的範圍。 The resin composition according to the first aspect of the invention, wherein the content of the resin (Aa) is in the range of 0.01% by mass to 20% by mass based on the total solid content of the composition. 如申請專利範圍第1項所述的樹脂組成物,其中以上述組成物中的總固體成分為基準,上述樹脂(Aa)的含有率為0.01質量%~10質量%的範圍。 The resin composition according to the first aspect of the invention, wherein the content of the resin (Aa) is in the range of 0.01% by mass to 10% by mass based on the total solid content of the composition. 如申請專利範圍第1項所述的樹脂組成物,其中以上述組成物中的總固體成分為基準,上述樹脂(Aa)的含有率為0.01質量%~5質量%的範圍。 The resin composition according to the first aspect of the invention, wherein the content of the resin (Aa) is in the range of 0.01% by mass to 5% by mass based on the total solid content of the composition. 一種膜,其具有感光化射線性或感放射線性,且是使用如申請專利範圍第1項所述的樹脂組成物而形成。 A film having a sensitizing ray or a radiation sensation and formed using the resin composition as described in claim 1 of the patent application. 一種圖案形成方法,包括:使用如申請專利範圍第1項所述的樹脂組成物來形成感光化射線性或感放射線性膜;對上述感光化射線性或感放射線性膜照射光化射線或放射線來進行曝光;以及對經曝光的上述感光化射線性或感放射線性膜進行顯影。 A pattern forming method comprising: forming a sensitized ray-sensitive or radiation-sensitive film using a resin composition as described in claim 1; irradiating the sensitized ray-sensitive or radiation-sensitive film with actinic rays or radiation Exposing is performed; and the exposed sensitized ray-sensitive or radiation-sensitive film is exposed. 如申請專利範圍第13項所述的圖案形成方法,其中使用電子束或極紫外線作為上述光化射線或放射線。 The pattern forming method according to claim 13, wherein an electron beam or an extreme ultraviolet ray is used as the actinic ray or radiation. 一種半導體元件,其是經由包含如申請專利範圍第13項所述的圖案形成方法的步驟而製造。 A semiconductor element manufactured by the steps comprising the pattern forming method as described in claim 13 of the patent application. 一種電子元件的製造方法,包含如申請專利範圍第13項所述的圖案形成方法。 A method of manufacturing an electronic component, comprising the pattern forming method according to claim 13 of the patent application.
TW103106625A 2013-02-28 2014-02-27 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, method for forming pattern, electronic device and method for manufacturing electronic device TWI632424B (en)

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* Cited by examiner, † Cited by third party
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CN109643063A (en) * 2016-08-31 2019-04-16 富士胶片株式会社 The manufacturing method of sensitized ray or radiation-sensitive resin composition, pattern forming method and electronic device

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