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TW200632550A - Negative resist composition and process for forming resist pattern - Google Patents

Negative resist composition and process for forming resist pattern

Info

Publication number
TW200632550A
TW200632550A TW095103164A TW95103164A TW200632550A TW 200632550 A TW200632550 A TW 200632550A TW 095103164 A TW095103164 A TW 095103164A TW 95103164 A TW95103164 A TW 95103164A TW 200632550 A TW200632550 A TW 200632550A
Authority
TW
Taiwan
Prior art keywords
resist composition
forming
resist pattern
negative
negative resist
Prior art date
Application number
TW095103164A
Other languages
Chinese (zh)
Other versions
TWI294557B (en
Inventor
Takako Hirosaki
Taku Hirayama
Daiju Shiono
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200632550A publication Critical patent/TW200632550A/en
Application granted granted Critical
Publication of TWI294557B publication Critical patent/TWI294557B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)

Abstract

A resist composition and a process for forming resist pattern are provided, which is capable of forming a resist pattern having high sensitivity and high resolution. The negative resist composition is a negative resist composition including (A) an alkali-soluble base material component, (B) an acid-generating agent component which generates an acid upon being exposed, and (C) a cross-linking agent, in which the base material component (A) contains a polyvalent phenol compound (Al) having a molecular weight of 300 to 2500 and two or more of phenolic hydroxyl groups expressed by the following general formula (I).
TW95103164A 2005-02-02 2006-01-26 Negative resist composition and process for forming resist pattern TWI294557B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026266A JP4327107B2 (en) 2005-02-02 2005-02-02 Negative resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200632550A true TW200632550A (en) 2006-09-16
TWI294557B TWI294557B (en) 2008-03-11

Family

ID=36777240

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95103164A TWI294557B (en) 2005-02-02 2006-01-26 Negative resist composition and process for forming resist pattern

Country Status (4)

Country Link
JP (1) JP4327107B2 (en)
KR (1) KR100996398B1 (en)
TW (1) TWI294557B (en)
WO (1) WO2006082856A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7871751B2 (en) * 2004-04-15 2011-01-18 Mitsubishi Gas Chemical Company, Inc. Resist composition
JP4969829B2 (en) * 2005-10-26 2012-07-04 東京応化工業株式会社 Compound and production method thereof
JP4765951B2 (en) * 2007-02-08 2011-09-07 Ｊｓｒ株式会社 Large silicon wafer having insulating film and method for manufacturing the same
JP4929110B2 (en) * 2007-09-25 2012-05-09 株式会社東芝 Photosensitive composition and pattern forming method using the same
JP5779835B2 (en) * 2008-09-30 2015-09-16 大日本印刷株式会社 Cross-linking agent, negative resist composition, pattern forming method using the resist composition, and electronic component

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4132302B2 (en) * 1997-11-07 2008-08-13 本州化学工業株式会社 Novel polyphenolic compounds
JP2000330282A (en) * 1999-05-24 2000-11-30 Nagase Denshi Kagaku Kk Negative radiation sensitive resin composition
JP2004302440A (en) * 2003-03-18 2004-10-28 Jsr Corp Resist composition
JP4389485B2 (en) * 2003-06-04 2009-12-24 Ｊｓｒ株式会社 Acid generator and radiation-sensitive resin composition

Also Published As

Publication number Publication date
TWI294557B (en) 2008-03-11
WO2006082856A1 (en) 2006-08-10
KR20070090268A (en) 2007-09-05
KR100996398B1 (en) 2010-11-24
JP4327107B2 (en) 2009-09-09
JP2006215164A (en) 2006-08-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees