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TW200624602A - Etchant solutions and additives therefor - Google Patents

Etchant solutions and additives therefor

Info

Publication number
TW200624602A
TW200624602A TW094142614A TW94142614A TW200624602A TW 200624602 A TW200624602 A TW 200624602A TW 094142614 A TW094142614 A TW 094142614A TW 94142614 A TW94142614 A TW 94142614A TW 200624602 A TW200624602 A TW 200624602A
Authority
TW
Taiwan
Prior art keywords
proviso
present
hal
substrate
patterned
Prior art date
Application number
TW094142614A
Other languages
English (en)
Inventor
Dirk Burdinski
Harold Brans
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200624602A publication Critical patent/TW200624602A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
TW094142614A 2004-12-06 2005-12-02 Etchant solutions and additives therefor TW200624602A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04106303 2004-12-06
EP05102155 2005-03-18

Publications (1)

Publication Number Publication Date
TW200624602A true TW200624602A (en) 2006-07-16

Family

ID=36578288

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142614A TW200624602A (en) 2004-12-06 2005-12-02 Etchant solutions and additives therefor

Country Status (6)

Country Link
US (1) US20110104840A1 (zh)
EP (1) EP1834011A2 (zh)
JP (1) JP2008523585A (zh)
KR (1) KR20070092219A (zh)
TW (1) TW200624602A (zh)
WO (1) WO2006061741A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI560765B (en) * 2011-09-30 2016-12-01 3M Innovative Properties Co Methods of continuously wet etching a patterned substrate

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US8764996B2 (en) 2006-10-18 2014-07-01 3M Innovative Properties Company Methods of patterning a material on polymeric substrates
KR101390340B1 (ko) 2007-09-11 2014-05-07 삼성전자주식회사 다중 레벨 메모리 장치 및 그 동작 방법
KR101346917B1 (ko) 2008-02-04 2014-01-03 동우 화인켐 주식회사 박막트랜지스터의 제조방법, 및 상기 방법에 이용되는식각액 조성물
KR101346976B1 (ko) 2008-02-12 2014-01-03 동우 화인켐 주식회사 박막트랜지스터의 제조방법, 및 상기 방법에 이용되는식각액 조성물
CN102084295A (zh) * 2008-05-06 2011-06-01 纳诺泰拉公司 分子抗蚀剂组合物、使用该成分形成衬底图案的方法以及由其制备的产品
WO2010151471A1 (en) * 2009-06-25 2010-12-29 3M Innovative Properties Company Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles
EP2480627A1 (en) * 2009-09-21 2012-08-01 Basf Se Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
CN102250600B (zh) * 2011-05-06 2013-05-29 河北科技大学 一种用于解除油田高分子聚合物堵塞的复合解堵剂
US8906812B2 (en) * 2011-06-22 2014-12-09 Intermolecular, Inc. Wet etch and clean chemistries for MoOx
WO2013063207A1 (en) 2011-10-28 2013-05-02 Corning Incorporated Glass articles with infrared reflectivity and methods for making the same
EP3063824B1 (en) 2013-12-31 2019-03-13 BYD Company Limited Signal collection assembly and power battery module comprising the same
US10134634B2 (en) * 2014-11-04 2018-11-20 Georgia Tech Research Corporation Metal-assisted chemical etching of a semiconductive substrate with high aspect ratio, high geometic uniformity, and controlled 3D profiles
JP6494254B2 (ja) * 2014-11-18 2019-04-03 関東化學株式会社 銅、モリブデン金属積層膜エッチング液組成物、該組成物を用いたエッチング方法および該組成物の寿命を延ばす方法
GB2539508A (en) * 2015-06-19 2016-12-21 Dst Innovations Ltd A method for making patterned conductive textiles
CN107175939B (zh) * 2016-03-09 2020-02-28 华邦电子股份有限公司 用于印刷线路制程的印章及其制造方法以及印刷线路制程
JP6917807B2 (ja) * 2017-07-03 2021-08-11 東京エレクトロン株式会社 基板処理方法
EP3875271A1 (en) * 2020-03-04 2021-09-08 Agfa Nv A lithographic printing plate precursor
CN115485417A (zh) * 2020-04-14 2022-12-16 恩特格里斯公司 蚀刻钼的方法及组合物
CN112605039A (zh) * 2020-12-08 2021-04-06 富乐德科技发展（天津）有限公司 一种去除钼材质表面金属导电薄膜的清洗方法
CN112695323B (zh) * 2020-12-10 2023-06-02 广西北港新材料有限公司 一种用于奥氏体不锈钢冷轧薄板的金相腐蚀液及样品腐蚀方法
CN114293056B (zh) * 2021-12-20 2022-12-23 富联裕展科技(深圳)有限公司 金属工件、金属制品、蚀刻液以及金属工件的制作方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI560765B (en) * 2011-09-30 2016-12-01 3M Innovative Properties Co Methods of continuously wet etching a patterned substrate

Also Published As

Publication number Publication date
JP2008523585A (ja) 2008-07-03
WO2006061741A2 (en) 2006-06-15
KR20070092219A (ko) 2007-09-12
WO2006061741A3 (en) 2008-01-17
EP1834011A2 (en) 2007-09-19
US20110104840A1 (en) 2011-05-05

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