TW200615695A - Positive resist composition and patterning process - Google Patents
Positive resist composition and patterning processInfo
- Publication number
- TW200615695A TW200615695A TW094111228A TW94111228A TW200615695A TW 200615695 A TW200615695 A TW 200615695A TW 094111228 A TW094111228 A TW 094111228A TW 94111228 A TW94111228 A TW 94111228A TW 200615695 A TW200615695 A TW 200615695A
- Authority
- TW
- Taiwan
- Prior art keywords
- formula
- group
- positive resist
- indicates
- indicate
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000000059 patterning Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 125000004185 ester group Chemical group 0.000 abstract 2
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical group FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06C—FINISHING, DRESSING, TENTERING OR STRETCHING TEXTILE FABRICS
- D06C23/00—Making patterns or designs on fabrics
- D06C23/04—Making patterns or designs on fabrics by shrinking, embossing, moiréing, or crêping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
- B62D—MOTOR VEHICLES; TRAILERS
- B62D1/00—Steering controls, i.e. means for initiating a change of direction of the vehicle
- B62D1/02—Steering controls, i.e. means for initiating a change of direction of the vehicle vehicle-mounted
- B62D1/04—Hand wheels
- B62D1/06—Rims, e.g. with heating means; Rim covers
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M13/00—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with non-macromolecular organic compounds; Such treatment combined with mechanical treatment
- D06M13/005—Compositions containing perfumes; Compositions containing deodorants
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06N—WALL, FLOOR, OR LIKE COVERING MATERIALS, e.g. LINOLEUM, OILCLOTH, ARTIFICIAL LEATHER, ROOFING FELT, CONSISTING OF A FIBROUS WEB COATED WITH A LAYER OF MACROMOLECULAR MATERIAL; FLEXIBLE SHEET MATERIAL NOT OTHERWISE PROVIDED FOR
- D06N7/00—Flexible sheet materials not otherwise provided for, e.g. textile threads, filaments, yarns or tow, glued on macromolecular material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Textile Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004115002 | 2004-04-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200615695A true TW200615695A (en) | 2006-05-16 |
TWI341441B TWI341441B (en) | 2011-05-01 |
Family
ID=35060935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094111228A TWI341441B (en) | 2004-04-09 | 2005-04-08 | Positive resist composition and patterning process |
Country Status (3)
Country | Link |
---|---|
US (1) | US7255973B2 (zh) |
KR (1) | KR100864147B1 (zh) |
TW (1) | TWI341441B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI382994B (zh) * | 2006-10-04 | 2013-01-21 | Shinetsu Chemical Co | Polymer compounds, photoresist materials, and pattern formation methods |
TWI382992B (zh) * | 2006-10-27 | 2013-01-21 | Shinetsu Chemical Co | 具有聚合性陰離子之鹽及高分子化合物、光阻材料及圖型之形成方法 |
TWI392964B (zh) * | 2008-02-14 | 2013-04-11 | Shinetsu Chemical Co | 光阻材料、光阻保護膜材料、及圖案形成方法 |
TWI395065B (zh) * | 2006-07-06 | 2013-05-01 | Shinetsu Chemical Co | 正型光阻組成物及圖型之形成方法 |
TWI406095B (zh) * | 2007-08-22 | 2013-08-21 | Shinetsu Chemical Co | 圖型之形成方法 |
CN112129237A (zh) * | 2020-08-17 | 2020-12-25 | 江苏大学 | 基于石英晶体微天平评估光刻胶光刻效率的方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1621927B1 (en) | 2004-07-07 | 2018-05-23 | FUJIFILM Corporation | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same |
JP4796792B2 (ja) * | 2005-06-28 | 2011-10-19 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP4717640B2 (ja) | 2005-12-12 | 2011-07-06 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
JP4937587B2 (ja) * | 2006-01-17 | 2012-05-23 | 東京応化工業株式会社 | 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法 |
US8003309B2 (en) * | 2008-01-16 | 2011-08-23 | International Business Machines Corporation | Photoresist compositions and methods of use in high index immersion lithography |
CN102037030A (zh) * | 2008-05-19 | 2011-04-27 | Jsr株式会社 | 液浸曝光用放射线敏感性树脂组合物、聚合物及抗蚀剂图案形成方法 |
JP4771101B2 (ja) * | 2008-09-05 | 2011-09-14 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4826840B2 (ja) * | 2009-01-15 | 2011-11-30 | 信越化学工業株式会社 | パターン形成方法 |
JP5874331B2 (ja) * | 2011-10-17 | 2016-03-02 | 住友化学株式会社 | 化学増幅型フォトレジスト組成物 |
JP7182438B2 (ja) | 2017-12-21 | 2022-12-02 | 信越化学工業株式会社 | 反射防止膜、反射防止膜の製造方法、及び眼鏡型ディスプレイ |
WO2019123842A1 (ja) | 2017-12-22 | 2019-06-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、レジスト膜付きマスクブランクス、フォトマスクの製造方法、電子デバイスの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US5310619A (en) * | 1986-06-13 | 1994-05-10 | Microsi, Inc. | Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable |
DE3750275T3 (de) | 1986-06-13 | 1998-10-01 | Microsi Inc | Lackzusammensetzung und -anwendung. |
KR100206664B1 (ko) * | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
JP3297272B2 (ja) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
JPH09230595A (ja) | 1996-02-26 | 1997-09-05 | Nippon Zeon Co Ltd | レジスト組成物およびその利用 |
RU2194295C2 (ru) | 1996-03-07 | 2002-12-10 | З Би. Эф. Гудрич Кампэни | Фоторезистная композиция и полимер |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3042618B2 (ja) | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
KR100382960B1 (ko) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법 |
JP4131062B2 (ja) * | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP3642228B2 (ja) * | 1999-05-19 | 2005-04-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3944669B2 (ja) | 1999-05-19 | 2007-07-11 | 信越化学工業株式会社 | エステル化合物 |
KR100955006B1 (ko) * | 2002-04-26 | 2010-04-27 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
KR100955454B1 (ko) * | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
JP4013063B2 (ja) | 2003-08-26 | 2007-11-28 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
-
2005
- 2005-04-08 KR KR1020050029411A patent/KR100864147B1/ko active IP Right Grant
- 2005-04-08 TW TW094111228A patent/TWI341441B/zh active
- 2005-04-08 US US11/101,568 patent/US7255973B2/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395065B (zh) * | 2006-07-06 | 2013-05-01 | Shinetsu Chemical Co | 正型光阻組成物及圖型之形成方法 |
TWI382994B (zh) * | 2006-10-04 | 2013-01-21 | Shinetsu Chemical Co | Polymer compounds, photoresist materials, and pattern formation methods |
TWI382992B (zh) * | 2006-10-27 | 2013-01-21 | Shinetsu Chemical Co | 具有聚合性陰離子之鹽及高分子化合物、光阻材料及圖型之形成方法 |
TWI406095B (zh) * | 2007-08-22 | 2013-08-21 | Shinetsu Chemical Co | 圖型之形成方法 |
TWI392964B (zh) * | 2008-02-14 | 2013-04-11 | Shinetsu Chemical Co | 光阻材料、光阻保護膜材料、及圖案形成方法 |
CN112129237A (zh) * | 2020-08-17 | 2020-12-25 | 江苏大学 | 基于石英晶体微天平评估光刻胶光刻效率的方法 |
CN112129237B (zh) * | 2020-08-17 | 2022-05-20 | 江苏大学 | 基于石英晶体微天平评估光刻胶光刻效率的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050227173A1 (en) | 2005-10-13 |
TWI341441B (en) | 2011-05-01 |
KR20060046646A (ko) | 2006-05-17 |
KR100864147B1 (ko) | 2008-10-16 |
US7255973B2 (en) | 2007-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200615695A (en) | Positive resist composition and patterning process | |
EP2078983A4 (en) | COMPOSITION FOR FORMING A TOP LAYER FILM AND METHOD FOR FORMING A PHOTO RESISTANCE STRUCTURE | |
JP2008242414A5 (zh) | ||
TW200632553A (en) | Negative resist composition and patterning process | |
ATE490986T1 (de) | Polymer, vernetztes polymer, zusammensetzung für ein feststoffpolymer-elektrolyt, feststoffpolymer-elektrolyt und klebstoffzusammensetzung | |
TW201144944A (en) | Positive type resist composition and method for producing microlens | |
EP2103592A3 (en) | Hydroxyl-containing monomer, polymer, resist composition, and patterning process | |
AR039698A1 (es) | Agonistas de los receptores cannabinoides | |
KR930021588A (ko) | 폴리스티렌 기제 광내식막 물질 | |
TW200508801A (en) | Silicon-containing polymer, resist composition and patterning process | |
EP1491523A4 (en) | ESTER COMPOUND, SOFTENER FOR BIODEGRADABLE ALIPHATIC POLYESTER RESIN AND BIODEGRADABLE RESIN COMPOSITION | |
TW200740964A (en) | Polymerizable liquid crystal compound | |
EP1574528A4 (en) | PHOTOSENSITIVE RESIN BASED ON SAPONIFIED POLYVINYL ACETATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF FORMING AQUEOUS GEL FROM THE COMPOSITION, AND COMPOUND | |
FR2687671B1 (fr) | Monomeres derives de sultones perhalogenees et polymeres obtenus a partir de ces monomeres. | |
TW200710083A (en) | Novel polymerizable ester compounds | |
TW200643165A (en) | Solvent composition | |
KR20190040384A (ko) | 폴리이미드 수지필름 및 폴리이미드 수지필름으로 이루어지는 전자디바이스용 기판 | |
EP1471064A4 (en) | Cumarin derivatives, process for their preparation and their use | |
KR970071142A (ko) | 반사 방지 코팅용 조성물 | |
TW200517784A (en) | Polymers, resist compositions and patterning process | |
TW200712781A (en) | Antireflective hardmask composition and methods for using same | |
TW200702924A (en) | Photoresist monomer, polymer thereof and photoresist composition including the same | |
WO2009041556A1 (ja) | 感放射線性組成物 | |
TW200502697A (en) | Polyester compound with sulfonamide structure, polymer, photoresist and patterning process | |
TW200512543A (en) | Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device |