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TW200615695A - Positive resist composition and patterning process - Google Patents

Positive resist composition and patterning process

Info

Publication number
TW200615695A
TW200615695A TW094111228A TW94111228A TW200615695A TW 200615695 A TW200615695 A TW 200615695A TW 094111228 A TW094111228 A TW 094111228A TW 94111228 A TW94111228 A TW 94111228A TW 200615695 A TW200615695 A TW 200615695A
Authority
TW
Taiwan
Prior art keywords
formula
group
positive resist
indicates
indicate
Prior art date
Application number
TW094111228A
Other languages
English (en)
Other versions
TWI341441B (en
Inventor
Jun Hatakeyama
Tatsushi Kaneko
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200615695A publication Critical patent/TW200615695A/zh
Application granted granted Critical
Publication of TWI341441B publication Critical patent/TWI341441B/zh

Links

Classifications

    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06CFINISHING, DRESSING, TENTERING OR STRETCHING TEXTILE FABRICS
    • D06C23/00Making patterns or designs on fabrics
    • D06C23/04Making patterns or designs on fabrics by shrinking, embossing, moiréing, or crêping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B62LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62DMOTOR VEHICLES; TRAILERS
    • B62D1/00Steering controls, i.e. means for initiating a change of direction of the vehicle
    • B62D1/02Steering controls, i.e. means for initiating a change of direction of the vehicle vehicle-mounted
    • B62D1/04Hand wheels
    • B62D1/06Rims, e.g. with heating means; Rim covers
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06MTREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M13/00Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with non-macromolecular organic compounds; Such treatment combined with mechanical treatment
    • D06M13/005Compositions containing perfumes; Compositions containing deodorants
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06NWALL, FLOOR, OR LIKE COVERING MATERIALS, e.g. LINOLEUM, OILCLOTH, ARTIFICIAL LEATHER, ROOFING FELT, CONSISTING OF A FIBROUS WEB COATED WITH A LAYER OF MACROMOLECULAR MATERIAL; FLEXIBLE SHEET MATERIAL NOT OTHERWISE PROVIDED FOR
    • D06N7/00Flexible sheet materials not otherwise provided for, e.g. textile threads, filaments, yarns or tow, glued on macromolecular material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Textile Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Materials For Photolithography (AREA)
TW094111228A 2004-04-09 2005-04-08 Positive resist composition and patterning process TWI341441B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004115002 2004-04-09

Publications (2)

Publication Number Publication Date
TW200615695A true TW200615695A (en) 2006-05-16
TWI341441B TWI341441B (en) 2011-05-01

Family

ID=35060935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111228A TWI341441B (en) 2004-04-09 2005-04-08 Positive resist composition and patterning process

Country Status (3)

Country Link
US (1) US7255973B2 (zh)
KR (1) KR100864147B1 (zh)
TW (1) TWI341441B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382994B (zh) * 2006-10-04 2013-01-21 Shinetsu Chemical Co Polymer compounds, photoresist materials, and pattern formation methods
TWI382992B (zh) * 2006-10-27 2013-01-21 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻材料及圖型之形成方法
TWI392964B (zh) * 2008-02-14 2013-04-11 Shinetsu Chemical Co 光阻材料、光阻保護膜材料、及圖案形成方法
TWI395065B (zh) * 2006-07-06 2013-05-01 Shinetsu Chemical Co 正型光阻組成物及圖型之形成方法
TWI406095B (zh) * 2007-08-22 2013-08-21 Shinetsu Chemical Co 圖型之形成方法
CN112129237A (zh) * 2020-08-17 2020-12-25 江苏大学 基于石英晶体微天平评估光刻胶光刻效率的方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1621927B1 (en) 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4717640B2 (ja) 2005-12-12 2011-07-06 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP4937587B2 (ja) * 2006-01-17 2012-05-23 東京応化工業株式会社 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US8003309B2 (en) * 2008-01-16 2011-08-23 International Business Machines Corporation Photoresist compositions and methods of use in high index immersion lithography
CN102037030A (zh) * 2008-05-19 2011-04-27 Jsr株式会社 液浸曝光用放射线敏感性树脂组合物、聚合物及抗蚀剂图案形成方法
JP4771101B2 (ja) * 2008-09-05 2011-09-14 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4826840B2 (ja) * 2009-01-15 2011-11-30 信越化学工業株式会社 パターン形成方法
JP5874331B2 (ja) * 2011-10-17 2016-03-02 住友化学株式会社 化学増幅型フォトレジスト組成物
JP7182438B2 (ja) 2017-12-21 2022-12-02 信越化学工業株式会社 反射防止膜、反射防止膜の製造方法、及び眼鏡型ディスプレイ
WO2019123842A1 (ja) 2017-12-22 2019-06-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、レジスト膜付きマスクブランクス、フォトマスクの製造方法、電子デバイスの製造方法

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
DE3750275T3 (de) 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JPH09230595A (ja) 1996-02-26 1997-09-05 Nippon Zeon Co Ltd レジスト組成物およびその利用
RU2194295C2 (ru) 1996-03-07 2002-12-10 З Би. Эф. Гудрич Кампэни Фоторезистная композиция и полимер
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3042618B2 (ja) 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP3642228B2 (ja) * 1999-05-19 2005-04-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3944669B2 (ja) 1999-05-19 2007-07-11 信越化学工業株式会社 エステル化合物
KR100955006B1 (ko) * 2002-04-26 2010-04-27 후지필름 가부시키가이샤 포지티브 레지스트 조성물
KR100955454B1 (ko) * 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물
JP4013063B2 (ja) 2003-08-26 2007-11-28 信越化学工業株式会社 レジスト材料及びパターン形成方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395065B (zh) * 2006-07-06 2013-05-01 Shinetsu Chemical Co 正型光阻組成物及圖型之形成方法
TWI382994B (zh) * 2006-10-04 2013-01-21 Shinetsu Chemical Co Polymer compounds, photoresist materials, and pattern formation methods
TWI382992B (zh) * 2006-10-27 2013-01-21 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻材料及圖型之形成方法
TWI406095B (zh) * 2007-08-22 2013-08-21 Shinetsu Chemical Co 圖型之形成方法
TWI392964B (zh) * 2008-02-14 2013-04-11 Shinetsu Chemical Co 光阻材料、光阻保護膜材料、及圖案形成方法
CN112129237A (zh) * 2020-08-17 2020-12-25 江苏大学 基于石英晶体微天平评估光刻胶光刻效率的方法
CN112129237B (zh) * 2020-08-17 2022-05-20 江苏大学 基于石英晶体微天平评估光刻胶光刻效率的方法

Also Published As

Publication number Publication date
US20050227173A1 (en) 2005-10-13
TWI341441B (en) 2011-05-01
KR20060046646A (ko) 2006-05-17
KR100864147B1 (ko) 2008-10-16
US7255973B2 (en) 2007-08-14

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