TW200524177A

TW200524177A - Structure of light-emitting diode

Info

Publication number: TW200524177A
Application number: TW93100543A
Authority: TW
Inventors: Ting-Kai Huang; Chi-Shen Lee; Hung-Chang Lai
Original assignee: Huga Optotech Inc
Priority date: 2004-01-09
Filing date: 2004-01-09
Publication date: 2005-07-16
Also published as: TWI281756B

Abstract

This invention provides a structure of light emitting diode with constructive oxide contact structure. The structure of light emitting diode is constructed on a substrate including: a buffer layer formed on the substrate; a lower confinement layer formed on the buffer layer; a light emitting layer formed on the lower confinement layer; an upper confinement layer formed on the light emitting layer; a constructive oxide contact structure formed on the upper confinement layer where the electric conductivity is P type, N type or I type; a first electrode and a second electrode (transparent electrode) as well. The transparent electrode is formed on the constructive oxide contact structure as anode of light emitting diode. The first electrode is formed on the lower confinement layer. It is isolated from light emitting layer, contact layer and transparent electrode. It is used as cathode of light emitting diode.

Description

200524177 五、發明說明（1) 【發明所屬之技術領域】本發明係有關於一種發光二極體結構，尤其係有關於一種由III-V族元素（III-V group element)構成，具有建構式氧化薄膜接觸層之發光二極體結構。【先前技術】氮化鎵（GaN)基外延技術自1993年為日本專家突破後，在全球掀起了氮化鎵基藍光發光二極體產業化的高潮。習知的氮化鎵系發光二極體結構丨（如第一圖所示）係形成於一基材10上，例如Al2〇3之基材，其結構從下至上依序為晶核層（nucleation layer)12、用以使後續長晶更佳順利與容易之N型摻雜氮化鎵的N型摻雜導電緩衝層（n 一 type conductive buffer layer)14、下束缚層曰 (confinement layer)16、供做發光用之主動 1_Γ)18 ^上束缚層20、P型氮化鎵的接觸層以及供做發光一極體1陽極之透明電極24，其中層_雜型是相反的，例如當、:束:束層 ”鎵時，上束缚層20為P型摻雜的氮化鎵。透明：：?的的^料通常^型摻雜’如氧化銦錫（Indlum tln ' 4 -e)、氧化錫録（Cadmium tin 另外，在緩衝層14上盥卜^ ^ 〜厚之金屬。離之區域上形成供做發ΐ:二缚，：1:及主動層“隔元—極體1陰極之電極26 〇圖為弟—圖中當發光二極體1的發光區域範圍 200524177 五、發明說明（2) 示意圖。於發光二極體1的透明* 向偏壓後’會使得發光二極體】^、s及電極26上施加順電極2 4流向主動層1 8。習知p型気=此日τ电流會自透明 (―)濃度無法太高，且；以；觸侧載子 (current Spreading)效應不佳觸以致電流散佈部份接觸層22。由第二圖中可 $明電極24緊覆蓋與透明電極24寬度相當之區域，流流過的區域僅為的發光區域受到限制，無法：揮===極體1 光二極體1之發光效率便大為降低。^ ^致使發綜上所述，習知的發光二木/ 理特性，而使其無法有效的=^^^於接觸層的物使得發光二極體的製造成本提$ 了 $二 '接雜層，這 ^ + π 円同日守產品良率也降佤。 ί體：=極體結構無法提供-個高發光效率的一極體，一極肢中大部份的主動層區用。再者，透明電極與接觸層兩者的推雜子好= r同型，故在透明電極與接觸層之間可能會產生接合面)亚不 (junction)，而影響發光二極體的操作。光接：：的物理特性應可使發光二極體之發先效率獲付有效之改善。中華民國發明專利第1562 揭示了一種摻雜的超晶格應變層（strained Uyer - superlatmces，SLS)結構做為發光二極體的升習知發光二極體的發光效率。中華民國發明專蜀利曰二 5„ :亦揭？了一種具有數位穿透層之氮化鎵系；光一圣肢，藉以使氧化銦錫層與p型氮化鎵系接觸層成為歐第8頁 200524177 五、發明說明（3) 姆接觸的狀態，以降低二者間的電阻。雖然，此此改_ : 多或少對於發光效率的提升皆有助益，惟仍未達到人人3 意之結果。因此，本發明即致力於克服上述之缺點發光二極體之發光效率。滿 ’以有效改善【發明内容】本發明之層（Construct 光二極體結構本發明之阻之發光二極根據本發式氧化薄膜接較易形成高濃當之透明電極壓。以根據本為發光二極體型’而透明電以消除透明電此外，以結構做為發光接觸特性，透目的，係提供-種具有建構式氧化薄膜接觸ive Oxide Contact Structure，c〇cs)之發 ο 另一目的，係提供一種能體結構，以有效改善其發種發光二極為發光二極之接觸層。的增加發光明所指出之一觸層結構來做度（高導電率） ’可用以有效發明所指出之建構式氧化的接觸層，可極更可以與接極與接觸層之根據本發明所不需限制接觸層具同一間所產生之指出之建構層’具有與可以大致與有效降低接觸層電光效率。體結構，係以建構體的接觸層，使其田此接觸層輔以適效率及降低操作電薄膜接觸層結構做觸層摻雜物之類導電型的材料，葬接合面。 9 式氧化薄膜接觸層透明電極有較佳之主動層一致，藉極體的接觸明電極的尺寸200524177 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a light-emitting diode structure, and particularly to a structure composed of a III-V group element with a construction formula. Light emitting diode structure of oxide film contact layer. [Previous technology] Since the breakthrough of the GaN-based epitaxial technology for Japanese experts in 1993, it has set off a climax of the industrialization of GaN-based blue light-emitting diodes worldwide. The conventional gallium nitride-based light-emitting diode structure (shown in the first figure) is formed on a substrate 10, such as a substrate of Al203, and its structure is a nucleus layer in order from bottom to top ( nucleation layer) 12. N-type doped conductive buffer layer (n-type conductive buffer layer) to make subsequent growth better and easier N-doped gallium nitride 14. Confinement layer 16. Active 1_Γ) for light emission 18 ^ Upper binding layer 20, P-type gallium nitride contact layer, and transparent electrode 24 for light emitting body 1 anode, where the layer_heterotype is opposite, for example, when ":: beam: bundle layer" gallium, the upper binding layer 20 is P-type doped gallium nitride. Transparent: The material of ?? is usually ^ -type doped ', such as indium tin oxide (Indlum tln' 4 -e) (Cadmium tin) In addition, on the buffer layer 14, a thick metal ^ ^ ~ thick metal is formed on the area for hairpin: two binding, 1: 1: and the active layer "spacer-pole body 1 cathode The electrode 26 〇 The picture shows the range of the light-emitting area of the light-emitting diode 1 in the picture 200524177 V. Description of the invention (2) Schematic diagram of the light-emitting diode 1 Ming * After biasing, 'will make the light-emitting diode] ^, s, and electrode 26 will be applied along the electrode 2 4 to the active layer 18. 8. It is known that p-type 気 = τ current will be transparent (―) concentration It is too high, and the current-side carrier effect is poor, so that the current spreads part of the contact layer 22. From the second figure, the bright electrode 24 can tightly cover the area equivalent to the width of the transparent electrode 24. The only light-emitting area flowing through is restricted, and it cannot be: the light-emitting efficiency of the light-emitting diode 1 is greatly reduced. ^ ^ As a result of the above-mentioned, the conventional light-emitting diode / management Characteristics, which makes it impossible to effectively = ^^^ the contact layer makes the manufacturing cost of the light-emitting diodes increased by $ 2 'hybrid layer, which ^ + π 円 the yield rate of the same day Shou products are also reduced. Ί Body: = Polar body structure can not provide a high luminous efficiency of a polar body, most of the active layer area in a pole limb. In addition, the transparent electrode and the contact layer of the dopant is good = r isotype, Therefore, a junction may be generated between the transparent electrode and the contact layer, which affects the operation of the light emitting diode. Optical connection :: The physical characteristics of the light emitting diode should be able to effectively improve the launch efficiency of the light emitting diode. The Republic of China Invention Patent No. 1562 discloses a doped superlattice strained layer (SLS) structure as a light-emitting diode. It is known that the light-emitting diode has a light-emitting efficiency. The Republic of China ’s invention patent Shuli 2nd 5 :: Also revealed? A gallium nitride system with a digital penetrating layer; a sacred limb, so that the contact layer of the indium tin oxide layer and the p-type gallium nitride system became the 8th in Europe. Page 200524177 V. Description of the invention (3) Contact state to reduce the resistance between the two. Although, this change _: more or less will help to improve the luminous efficiency, but it has not reached everyone's expectations As a result, the present invention is devoted to overcoming the shortcomings of the luminous efficiency of light-emitting diodes. Man's to effectively improve the [contents of the invention] the layer of the present invention The hair-type oxide film is relatively easy to form a high-concentration transparent electrode pressure. Based on the light-emitting diode type, the transparent electricity is eliminated to eliminate the transparent electricity. In addition, the structure is used as the light-emitting contact characteristic. The invention has a structured oxide thin film contact ive Oxide Contact Structure (cocs). Another purpose is to provide an energy body structure to effectively improve the contact between the light emitting diode and the light emitting diode. Increase the brightness of one of the layer structures indicated by the luminescence (high conductivity). 'It can be used to effectively construct the structured oxide contact layer indicated by the invention, and it can be very much connected to the electrode and the contact layer according to the present invention. It is not necessary to limit the contact layer to have the same construction layer that has the same indication. It has the ability to roughly and effectively reduce the electro-optical efficiency of the contact layer. The body structure is the contact layer of the structure, which makes the contact layer supplemented with appropriate efficiency and reduction. Operate the electrical thin film contact layer structure as a conductive material such as the contact layer dopant to bury the joint surface. The 9-type oxide thin film contact layer transparent electrode has a better active layer consistency, and the size of the electrode contacts the bright electrode.

第9頁 200524177 五、發明說明（4) __ k南電流通過主動層的F代、7但> 而使發光效率提^ £域動層可發光區域，下：根據本發明所指出之發光二極體結構，其構造簡述如 =本發明所指出之發光二極體結上，包含-緩衝層、一下束缚層、—發光声、：：基板層、一接觸層，及第一帝炼盥筐-帝曰上束缚中，镇一道十別包極/、弟一电極（透明電極）。复弟一 V笔型之緩衝層係形成於此：之下束缚層則形成於此第一導電型之緩昂：：電型缚層之摻雜物盘導帝緩衝層上，其中下束 P型或N型於衝層之摻雜物係為同型，例如同為電型之卜Ϊ 1 層係形成於下束缚層上，而第二導上束縛層則形成於發光層上，1 物與下束缚層之摻雜物為不 ^ 層之摻雜料，形成於上束缚層上供 i v 化合物材氧化薄膜接觸層，1導m'。此接觸層係為建構式帝化成於接觸層上’做為發光二炻姊+從此> 书冬則形成於下束缚層上， :%極。弟一極隔，，做為發光二極體之層、接觸層及透明電型可以同型與冓式氧化薄膜接觸層兩者之導電 p型，另—：為=型，例如兩者同為p型《型，或其-為本發明在此另提出一種I右名構於-基板上之發光二極體if構：氧化薄膜接觸層，奴結構。其係由一形成於此基 200524177 五、發明說明（5) 板上之導電缓衝層層中之發光層，— 觸層，其導電性可化薄膜接觸層上之發光層、接觸層及，一架構於緩衝層上形成於上束缚層上之建:束缚為P型、N型或I型， /式氣化薄膜接導電型薄膜，形，形成於建構式氧做為電流分散及透摻雜物為不同型，雜物。前述之透明電型可以同型或不同 P型，另一則為N型本發明將藉由些實施例並不限制之技藝者，可做些範嘴。透明電極隔離之第;^束缚層上，並與電型薄膜上之第二電極(透明電極）乐：，極，及形成於導光層。上東摘P >二中，導電型薄膜係例如其一為p型物/、下束縛層之 H雜物，另—則為極與建構式氧化薄腺技結抵荆y r ，寻腰接觸層兩者之導電型，例如兩者同為p刑+ λί & n导电 j / j馬r型或Ν型，一麥考下列的實施例做進一步 :發明前面所揭示…。=發：卉之改良與修飾，但仍不脫離本發明之【實施方式】為使本發明之目的、特徵及優點能更輕發明技藝者了*，兹配合所附圖式做進一步詳：本下· ^ ，據本發明所指出之發光二極體結構，係利用建構式氧化 4 膜接觸層（Constructive Oxide Contact Structure，C0CS)以形成高濃度（高導電率）之接觸層，來第11頁 200524177 發明說明（6) 降低接觸層電阻。當此以有效的增加發朵1 S輔以適當之透明電極，可用此外，+ 率及降低操作電壓。 (b— layer)3 =化；膜接觸層具有較本體層電極可以輕易的與之形=:度，使得架構於其上之透明致因載子濃戶$ Μ ^ / °人姆接觸（Ohmic contact)，不 contact)，而使得开役肅基接觸（Schottky 可使用盥建構穴々仆“木作電壓增加。另外，透明電極使用”建構式乳化薄膜接透明電極與接觸層之間不易」：之材枓，使付明電極與接觸声之尺+鈐旦y 口面（junction) ’且透 ▲ 牧啊層之尺寸較易做成一致。圖’為根據本發明所指出之發光二極體結構二極n之剖φ示意目。根據本發明所指丨之發光構100首先係提供一基板12。，此基板12〇可以為 =、·、表物貝’亦可由導電型半導體材料所製備，在此並沒有特別的限制，只要是任何習知或未知可供作為發光二極 2基板之材料皆可被應用在根據本發明所指出之發光二極脰、、Ό構中。s其為絕緣物質時，在此可舉出的例子，包含氧化紹（Α12〇3，sapphire)、氮化鋁（Α1Ν)、氮化鎵（GaN)、尖晶石（Spinel)、氧化鋰鎵（LiGa03)或氧化鋁鋰（LiA1〇3) 等’但並不僅限於此。當其為導電型半導體材料時，在此可舉出的例子，包含碳化石夕（S i C)、氧化鋅（z n q )、石夕 (Si)、磷化鎵（GaP)、砷化鎵（GaAs)、砸化辞（ZnSe)、石舞化銅（InP)或加入矽雜質導電型氮化鎵（GaN)等，但並不僅限於此。 200524177 五、發明說明（7) 接著’ 一層第一導電型缓衝層122形成於基板！ 2〇上，其材料可為AlxInyGai_"N等化合物，其中X ; y - 〇 ; 〇 $x + y < 1。在此可以舉出的例子，包含氮化銦（InN)、氮化姻鎵（InGaN)、氮化鋁鎵（A1GaN)或氮化鎵（GaN)。备形成一下束缚層124於第一導電型緩衝層122上，其可藉由任何習知或未知之含有氮化鎵（GaN)之丨丨卜V族元素化合物製備:此化合物可藉由Μ»】。，之化學通式表示，其中〇 - 0 ; p - 〇 ; 〇 ^ 〇 + p < j ; 〇 > χ。例如，第一導電型氮=鎵（GaN)。下束缚層124上再形成一發光層126，其亦 ::2:: Ή ί知之含有氮化鎵(GaN)之11 Η族元素來:一 Γ击#歹1如氮化銦鎵（1 nGaN)。於此發光層1 26上再 :— ^層1 2 8，其亦可藉由任何習知或未知之含有Page 9 200524177 V. Description of the invention (4) __ k South current improves the luminous efficiency through the F-generation of the active layer, 7 but> ^ The light-emitting area of the movable layer can be reduced, according to the invention: The structure of the polar body is briefly described as the light emitting diode junction pointed out in the present invention, which includes-a buffer layer, a lower binding layer,-a light emitting sound :: a substrate layer, a contact layer, and a first emperor's toilet basket- In the bondage of the emperor, the town has ten don't include the pole / the younger one (transparent electrode). Fudi-V pen-type buffer layer is formed here: The lower binding layer is formed on the first conductive type of buffer :: the dopant disk of the electric type binding layer on the buffer layer, where the lower beam P The dopant system of the N type or N type in the punching layer is the same type. For example, the same type of electrical dopant 1 layer system is formed on the lower binding layer, and the second upper conductive layer is formed on the light emitting layer. The dopant of the lower tie layer is a non-layer dopant, which is formed on the upper tie layer for the contact layer of the iv compound oxide film, 1 m ′. This contact layer is a construction formula Emperor is formed on the contact layer ’as a light emitting sister + from now on> Shu Dong is formed on the lower binding layer,:% pole. The first electrode is used as the light-emitting diode layer, the contact layer, and the transparent electric type. The conductive p-type can be both the same type and the 冓 -type oxide film contact layer, and the other is: = type, for example, both are p. The "type" or "-" is a light-emitting diode structure on the substrate, which is an I-type structure on the substrate, which is an oxide film contact layer and a slave structure. It consists of a light-emitting layer formed in the conductive buffer layer on the substrate 200524177 V. Description of the invention (5), a contact layer, a light-emitting layer, a contact layer, and A structure is formed on the buffer layer and is formed on the upper binding layer: the binding is P-type, N-type or I-type, the / -type gasification film is connected to the conductive film, and is formed in the construction type oxygen for current dispersion and permeation. Debris is of different types. The aforementioned transparent electrical type may be the same type or different P type, and the other is N type. The present invention will be able to do some tricks by those skilled in the art that are not limited by the embodiments. The transparent electrode is isolated on the first binding layer, and is connected to the second electrode (transparent electrode) on the electric film, the electrode, and the light guide layer. Upper East Pick P > Second, the conductive thin film is, for example, one of the p-type / H impurity of the lower binding layer, and the other is the pole and the structured oxidized thin gland technology to reach Jing yr, find waist contact The conductivity type of the two layers, for example, both are p + + λ n & n conductive j / j horse r type or N type, a McCaw the following embodiment to go further: the invention disclosed earlier ... = Hair: Improvements and modifications of the plant, but still without departing from the [embodiment] of the present invention. In order to make the purpose, features and advantages of the present invention lighter for the inventor *, I will make further details in conjunction with the drawings: Next, according to the light-emitting diode structure pointed out in the present invention, a constructive oxide contact structure (COCS) is used to form a high-concentration (high-conductivity) contact layer. Page 11 200524177 Description of the invention (6) Reduce contact layer resistance. When this is effectively increased by 1 S supplemented by a suitable transparent electrode, it can be used. In addition, + rate and lower operating voltage. (b— layer) 3 = 化; the film contact layer has a shape that can be easily compared with the bulk layer electrode =: degree, which makes the transparent structure on top of it caused by the carrier concentration $ M ^ / ° person contact (Ohmic (contact), not contact), which makes Kaiying contact (Schottky can use the toilet to build a hole to increase the voltage of the wood. In addition, the use of transparent electrodes "constructive emulsion film is not easy to connect between the transparent electrode and the contact layer": The material is so that the size of the Fuming electrode and the contact sound + the y-junction y (junction) and the size of the transparent layer are easier to make. The figure is a light-emitting diode according to the present invention. The schematic diagram of the cross section φ of the structure dipole n. According to the present invention, the light-emitting structure 100 is first provided with a substrate 12. The substrate 120 may be =, ·, surface material, or may be prepared from a conductive semiconductor material. There is no special limitation here, as long as it is any conventional or unknown material that can be used as the substrate of the light-emitting diode 2 can be used in the structure of the light-emitting diode 脰, Ό according to the present invention. It is Examples of insulating materials, including Oxide oxide (Α12〇3, sapphire), aluminum nitride (Α1Ν), gallium nitride (GaN), spinel, lithium gallium oxide (LiGa03) or lithium aluminum oxide (LiA103), etc. It is not limited to this. When it is a conductive semiconductor material, examples that can be cited here include silicon carbide (S i C), zinc oxide (znq), stone (Si), gallium phosphide (GaP), Gallium arsenide (GaAs), ZnSe, copper (InP), or silicon-doped conductive gallium nitride (GaN) are not limited to this. 200524177 V. Description of the invention (7) Next 'A layer of the first conductive buffer layer 122 is formed on the substrate! 20, and its material may be compounds such as AlxInyGai_ " N, where X; y-〇; 〇 $ x + y < 1. Can be cited here Examples include indium nitride (InN), gallium nitride (InGaN), aluminum gallium nitride (A1GaN), or gallium nitride (GaN). A binding layer 124 is formed on the first conductive buffer layer 122, which It can be prepared from any conventional or unknown group V element compounds containing gallium nitride (GaN): this compound can be obtained by M »]. Where 〇-0; p-〇; 〇 ^ 〇 + p <j; 〇 > χ. For example, the first conductivity type nitrogen = gallium (GaN). A light-emitting layer 126 is further formed on the lower binding layer 124, which Also :: 2 :: Ή Knowing that it contains 11 Group VIII elements of gallium nitride (GaN): a Γ strike # 歹 1 such as indium gallium nitride (1 nGaN). On this light emitting layer 126 again:-^ Layer 1 2 8 which can also contain by any known or unknown

Km)):?1]族元素化合物製備，例如第二導電型虱化鎵（GaN)或氮化鋁鎵（A1GaN)。物的選用選擇、成分含量、推雜 mr明利=所舉之接者，再於上束缚層j 2 隹〜祀图發明所指出之發光二搞姊沾姐形成―接觸層130。根據本有極高載子濃度之ΰ/；；^00中’其接觸層130係由具成，分別為P+GaN、γ ΙηΝ ;、了精由四種材料所堆疊而序可依Ρ型、Ν型摻雜物作隨意，二㈡ 200524177 五、發明說明（8) 1，A、Y2及Ys可為P型或JV型摻雜物，型、N型或！型。此建構式氧匕”性亦可為P 〇.卜U〇〇奈米（n_ met% nm)=f層之厚度範圍在接著，於下束缚層124上，與發光声 1 2 8及接觸層1 3 0隔離之區域上形成第、、1層光二極體結構_的陰極，其盘VW^f132 ’做為發觸，進而有較低之接觸電阻：另下外束；層= -第二電極(透明電極)134，其係由二觸屬層=^^ 備，做為發光二極體結構1 00的陽極。、’ ’、衣前述第一電極或第二電極係為選自由銦（In)、錫 (Sn)、辞（Zn)、鎳（Ni)、金（Au)、鉻（Cr)、鈷（c (Cd)、鋁（A1)、釩（v)、銀（Ag)、鈦（Ti)、鎢（^、鉑/ (Pt)、鈀（Pd)、铑（仙）、釕（RU)等金屬所形成之一元、二兀或二元以上之合金的金屬電極，其厚度範圍在^ 奈米（n m)之間。 ’ 根據本發明所指出之發光二極體之另一實施例如圖所示，其結構大致上與第三圖中之實施例相同，惟其觸層1 3 0上再形成一層導電型薄膜丨3 6，供作為電流分散及透光用。其可應用於覆晶式發光二極體材料封裝上:^以有效提高此發光二極體之散熱特性及抗靜電能力。此^ = 型薄膜136係為由銦（in)、錫（Sn)、鋅（Zn)、鎳（Ni )、金' (Au)、鉻（Cr)、鈷（c〇)、鎘（Cd)、鋁（A1)、釩（V)、銀至 (Ag)、鈦（Ti)、鎢（w)、鉑（Pt)、鈀（Pd)、铑（Rh)或^ (Ru)等金屬所形成之一元、二元或二元以上之氧化薄膜或第14頁 200524177 五、發明說明（9) 此合金之透明氧化逡带p L化V电層，厚度範圍在} 〇〜i 〇，〇〇〇之間導笔型薄膜1一36_亦可藉由具有高反射率金屬所形成之一 = = 一凡以上之合金所製備。其中，此具有高反射至蜀此可舉出之例子，包含鋁（A 1 )、銀（Ag )、鉑爲= (Pd)、/老（Rh)、釕（RU)、鈦⑴）、金（Au)、鎳 1 、’5 (Cu)等’但並不僅限於此。 ^此外，由於建構式氧化薄膜接觸層具有較本體層雷〇極可^更高之載子濃I，使得架構於其上之透明致闲:1 Γ易的與之形成歐姆接觸（〇hmic contact)，不致口載^ k度不夠高而形成蕭基接觸（Sch〇uky 可使用與建:兀件之操作電壓增加。另外，透明電極透明電極鱼接觸Π ί膜接觸層相同導電型之材料，使得明電極與接觸尺產生接合面Uunction)，且透 ” 安啁層之尺寸較易做成一致。具有：ΐ =色根據本發明所指出之發光二極體結構至少 1 ·以本發明所指出之涂甚 ^ — 2體二可容= = =光二極較佳的歐姆二=構= :層與透：電極具有操作電壓。货毛九放率棱咼，亚降低元件之 3.透明電極與接觸層兩者當兩者為同-導電型時，可：以為同型或不同型，由於發光二極體通常除接合面之問題。、吊為月f電破感之材料，當將根據本 200524177 五、發明說明（ίο) -- 發明所指出之發光二極體結構與習知之結構進行靜電測試時，做為接觸層之建構式氧化薄膜接觸層，可有效提據本發明所指出之發光二極體之抗靜電放電 x (Electrostatic DiScharge， ESD)能力（表一）。茶閱第五圖，為根據本發明所指出之發光二極雕流-電壓特性測試之數據分析圖，由圖中可以看出，^於施予相同的電流，根據本發明所指出之發光二極體於田匕流的操作下，可比習知之發光二極體獲得較低的電壓特包，閱弟一圖，係為根據本發明所指出之發光二極體電流-亮度測試之數摅八姘m ^ ^ ^ ^ ^ 备不®之本發明所#屮據予相$的電流下根據高之亮产。曰务光二極體較習知之發光二極體能發出較綜上所述，實能較習知之發件操作電壓及較根據本發明所指出之發光二極體結構，確光二極體具有較高之發光效率、較低之元強之抗靜電放電能力。Km)):? 1] Group element compound, such as the second conductivity type gallium lice (GaN) or aluminum gallium nitride (A1GaN). Selection and selection of materials, component content, and impurity content mr Mingli = the connected one, and then on the upper binding layer j 2 隹 ~ sacrifice map The light emitting two pointed out by the invention to form the contact layer 130-contact layer 130. According to the fact that there is a very high carrier concentration, the contact layer 130 in ^ 00 is made of P + GaN, γ ΙηΝ; and the order can be according to the P type. And N-type dopants are optional. II. 200524177 V. Description of the invention (8) 1. A, Y2 and Ys can be P-type or JV-type dopants, type, N-type or! type. The properties of this construction formula can also be P 〇〇〇〇nm (n_met% nm) = f layer thickness range is then, on the lower binding layer 124, and the light emitting sound 1 2 8 and the contact layer The cathodes of the first and first layers of photodiode structure _ are formed on the isolated area. The disk VW ^ f132 'is used as the contact, which has a lower contact resistance: the other outer beam; layer = -second The electrode (transparent electrode) 134 is prepared by a bi-contact layer = ^^, and is used as the anode of the light-emitting diode structure 100. The first electrode or the second electrode is selected from the group consisting of indium ( In), tin (Sn), diction (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (c (Cd), aluminum (A1), vanadium (v), silver (Ag), Metal electrode consisting of one-, two-, or more-alloy metal electrodes made of titanium (Ti), tungsten (^, platinum / (Pt), palladium (Pd), rhodium (sen), ruthenium (RU), etc. The range is between ^ nanometers (nm). 'According to another embodiment of the light-emitting diode pointed out in the present invention, the structure is substantially the same as the embodiment in the third figure, but the contact layer 1 3 A layer of conductive film is formed on 0 丨 3 6 for It is used for current dispersion and light transmission. It can be applied to flip-chip light-emitting diode material packaging: ^ to effectively improve the heat-dissipation characteristics and antistatic ability of this light-emitting diode. This ^ = type film 136 is made of indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (c0), cadmium (Cd), aluminum (A1), vanadium (V) , Silver to (Ag), titanium (Ti), tungsten (w), platinum (Pt), palladium (Pd), rhodium (Rh) or ^ (Ru) and other metals formed by one, two or more binary Oxide film or page 14 200524177 V. Description of the invention (9) The transparent hafnium oxide of this alloy has a p LV electric layer with a thickness in the range of} 〇 ~ i 〇, 〇〇〇 Guide film 1-36_ It can also be prepared by using one of the alloys with high reflectivity = = more than one ordinary alloy. Among them, the examples with high reflectance can include aluminum (A 1), silver (Ag), Platinum is (Pd), / old (Rh), ruthenium (RU), titanium hafnium), gold (Au), nickel 1, 5 (Cu), etc. 'but is not limited to this. ^ In addition, due to the structural oxidation The thin film contact layer has a higher lightning resistance than the bulk layer. The carrier concentration I makes the structure transparent and leisurely on it: 1 Γ easily forms an ohmic contact with it, and does not cause the mouth load ^ k degree is not high enough to form a Schottky contact (Schooky can be used with Construction: The operating voltage of the element is increased. In addition, the transparent electrode and the transparent electrode are in contact with the material of the same conductive type of the film contact layer, which makes the junction between the bright electrode and the contact rule (Uunction), and the size of the transparent layer is easier. Made consistent. It has: ΐ = color The light emitting diode structure according to the present invention is at least 1 · It is coated with the point indicated in the present invention ^ — 2 body two is tolerable = = = light diode is the best ohmic second structure = layer and Transparent: The electrode has an operating voltage. Cargo hair has a sharp edge rate, sub-reduced components. 3. When both the transparent electrode and the contact layer are of the same-conducting type, they can be: the same type or different types. Because light-emitting diodes usually eliminate the problem of the joint surface. . It is used as the construction of the contact layer when the electrostatic test is performed on the light-emitting diode structure and the conventional structure pointed out in this 200524177 V. Invention Note (ίο)-Invention. The oxide film contact layer can effectively improve the antistatic discharge (ESD) capability of the light emitting diode according to the present invention (Table 1). The fifth chart of the tea is the data analysis chart of the light-emitting diode current-voltage characteristic test according to the present invention. It can be seen from the figure that the same current is applied to the light-emitting diode according to the present invention. Under the operation of the polar body, the polar body can obtain a lower voltage special package than the conventional light-emitting diode. See the figure below, which is the number of the light-emitting diode current-brightness test according to the present invention.姘 m ^ ^ ^ ^ ^ ^ The present invention # # 屮不 ® of the present invention is based on the current of Gao Zhiliang. That is to say, the light diode can emit more light than the conventional light emitting diode. In fact, the light emitting diode can have a higher operating voltage and the light emitting diode structure according to the present invention. Luminous efficiency, low electrostatic discharge resistance.

200524177 圖式簡單說明第一圖係顯示習知含I I I -V族元素之發光二極體之剖面示意圖；第二圖係顯示第一圖中發光二極體的發光區域範圍之示意圖，第三圖係為根據本發明所指出之發光二極體結構較佳實施例之剖面示意圖；第四圖係為根據本發明所指出之發光二極體結構另一實施例之剖面示意圖；200524177 The diagram is briefly explained. The first diagram is a schematic cross-sectional view showing a conventional light-emitting diode containing a group III-V element. The second diagram is a schematic diagram showing the range of the light-emitting area of the light-emitting diode in the first diagram. The third diagram FIG. 4 is a schematic sectional view of a light emitting diode structure according to a preferred embodiment of the present invention; FIG. 4 is a schematic sectional view of another embodiment of a light emitting diode structure according to the present invention;

第五圖係為根據本發明所指出之發光二極體電流-電壓特性測試之數據分析圖。 ♦:習知之發光二極體結構； :本發明之發光二極體結構。第六圖係為根據本發明所指出之發光二極體之電流-亮度測試之數據分析圖。 ♦:習知之發光二極體結構； :本發明之發光二極體結構。【元件代表符號簡單說明】The fifth figure is a data analysis chart of the light-emitting diode current-voltage characteristic test according to the present invention. ♦: Known light-emitting diode structure;: Light-emitting diode structure of the present invention. The sixth diagram is a data analysis diagram of the current-brightness test of the light emitting diode according to the present invention. ♦: Known light-emitting diode structure;: Light-emitting diode structure of the present invention. [Simple description of component representative symbols]

1 發光二極體 10 基材 12 晶核層 14 緩衝層 16 下束缚層 18 主動層1 Light-emitting diode 10 Substrate 12 Nucleus layer 14 Buffer layer 16 Lower binding layer 18 Active layer

第17頁 200524177 圖式簡單說明 20 上束缚層 22 接觸層 24 透明電極 2 6 電極 1 0 0發光二極體結構 1 2 0 基板 1 2 2 緩衝層 124 下束缚層Page 17 200524177 Brief description of the diagram 20 Upper binding layer 22 Contact layer 24 Transparent electrode 2 6 Electrode 1 0 0 Light emitting diode structure 1 2 0 Substrate 1 2 2 Buffer layer 124 Lower binding layer

1 2 6發光層 128 上束缚層 130接觸層 1 3 2第一電極 134 第二電極 1 3 6 導電型薄膜1 2 6 Light-emitting layer 128 Upper tie layer 130 Contact layer 1 3 2 First electrode 134 Second electrode 1 3 6 Conductive film

第18頁 200524177 to 皿級數3 級數2 級數1 人體模式(HBM) 本發明發光二極體結構習知發光二極體結構晶粒型式 4000〜15999〇) 1 2000〜3999(v) 0〜1999(v) 機械模式㈠機械模式(+) > 錄 3 人體模式(+) 機械模式㈠機械模式(+) 人體模式㈠人體模式(+) 靜電量測試模式 § 1—^ M0 機械模式(MM) -800 700 -5000 4000 250 -250 2000 1—^ 100〜199(v) 1 50 〜99(ν) 0 〜49(v) -600 500 -3000 5000 晒 to Η—^ Ο -1500 I 2500 丨 K) § Μ4 § -450 500 -4000 4000 1 Η—^ Ο 300 -2000 2000 U) >799(v) 400〜799(ν) 200〜399(v) -500 1000 -3000 5000 1 Ο 200 2500 私 1 -600 500 -5000 1 7000 Η—^ Ο -200 3000 機械模式：EIAJ-IC-121 Method 20 HH 1 00 Η ϋ 1 00 00 U) Ο 1 U) o 測試標準 -700 700 -3000 6000 祖 Κ) 250 -1000 2500 〇\ -500 800 -4000 4500 -100 150 -250 2500 -600 1 j 600 -4500 5000 ii 100 -500 3000 00 -600 750 -5000 4500 1 Ο 300 -2000 2500 -500 500 -4000 5000 1 Ο 200 -500 3000 H—^ >丨诔蕤卄##^l·脔鵾雜雜障漆t复ιί_~雜>Page 18 200524177 to Dish Series 3 Series 2 Series 1 Human Body Model (HBM) The conventional light-emitting diode structure of the present invention is known. The light-emitting diode structure is of grain type 4000 ~ 15999〇) 1 2000 ~ 3999 (v) 0 ~ 1999 (v) Mechanical mode㈠ Mechanical mode (+) > Record 3 Human body mode (+) Mechanical mode㈠ Mechanical mode (+) Human body mode㈠ Human body mode (+) Static test mode§ 1— ^ M0 Mechanical mode ( MM) -800 700 -5000 4000 250 -250 2000 1- ^ 100 to 199 (v) 1 50 to 99 (ν) 0 to 49 (v) -600 500 -3000 5000 to Η— ^ Ο -1500 I 2500丨 K) § Μ4 § -450 500 -4000 4000 1 Η— ^ Ο 300 -2000 2000 U) > 799 (v) 400 ~ 799 (ν) 200 ~ 399 (v) -500 1000 -3000 5000 1 Ο 200 2500 Private 1 -600 500 -5000 1 7000 Η— ^ Ο -200 3000 Mechanical mode: EIAJ-IC-121 Method 20 HH 1 00 Η ϋ 1 00 00 U) 〇 1 U) o Test standard -700 700 -3000 6000 Zu K) 250 -1000 2500 〇 \ -500 800 -4000 4500 -100 150 -250 2500 -600 1 j 600 -4500 5000 ii 100 -500 3000 00 -600 750 -5000 4500 1 〇 300 -2000 2500 -500 500 -4000 5000 1 Ο 200 -500 3000 H— ^ > 丨诔蕤卄 ## ^ l · 脔鵾杂杂障漆 t 复 ι__ 杂 >

Claims

200524177 VI. Application for patent scope 1. A light-emitting diode structure, including: a substrate; a buffer layer formed on the substrate; a buffer layer formed on the buffer; a buffer layer formed on the buffer layer; A light emitting layer; a binding layer formed on the light emitting layer; a contact layer formed on the upper binding layer, which is a constructive oxide thin film prepared from a second semiconductor compound material; (Constructive Oxide Contact Structure , ^ COCS); l /, a first electrode on 4 lower binding layers, and isolated from the light emitting layer, the upper binding layer and the contact layer; and a second electrode formed on the contact layer. 2 ·; Π: The light-emitting diode structure described in the first item of the scope, wherein the film contact layer is a stack of P + GaN, YlInN, and γ3 di P: 0 w-1, ', Υ2 3 is a P-type or N-type dopant. The structure of the light-emitting diode described in item 2 above, wherein the conductivity of the i-type contact layer is P-type, N-type, or I-type. The structure of the light-emitting diode structure described in the second item of Jianwei ^ ^ Qianwei, the thickness of the contact layer of the binary structure gasification film is in the range. · 2: Nanometer 5. in !: The light-emitting diode structure described in item 1, wherein the inversion is made of a "barrier material or a conductive semiconductor material." Page 19, 200524177 VI. Scope of patent application ^-6 · = The light-emitting diode structure described in item 5 of the scope of patent application, wherein the material of the aluminum, aluminum and copper is selected from alumina (AI? 〇3, s apph ire), nitride nitride (GaN), spinel, gallium oxide (LiGa03), or lithium aluminum oxide (LiA103). 7. · Please request the light-emitting diode structure described in item 5 of the patent scope, wherein the conductive semiconductor material is selected from silicon carbide (SiC), zinc oxide (Zn0), Shi Xi (Si), and gallium disc (Gap) ), At least one of gallium arsenide (GaAs), zinc selenide (ZnSe), indium phosphide (Inp), or conductive impurity type gallium nitride (GaN) with silicon added.

8 · The light emitting diode structure described in item 1 of the scope of patent application, wherein the buffer layer is prepared by Aΐχ, where 〇; 0 ^ x + y < 1 〇9 · as in the scope of patent application The light-emitting diode structure according to item 1, wherein the lower binding layer is prepared by a Group II element compound containing gallium nitride (GaN), and the compound can be represented by the general chemical formula of Alc) InpGaitpN, where 0 —0, p—〇; 〇S〇 + P <1; 〇 > X.

1 〇 The light-emitting diode structure described in item 丨 of the patent application scope, wherein the first electrode or the second electrode is a metal electrode formed by one, two, or more than one metal alloy formed by a metal, the metal Is selected from indium (丨 n), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), starting (Co), cadmium (Cd), aluminum (A1), vanadium (V), silver (Ag), titanium (Ti), tungsten (W), platinum (Pt), palladium (Pd), rhodium (Rh) or ruthenium (Ru) at least one of them The light-emitting diode structure described in item 〇, wherein

Page 20 This first electrode or second. A light-emitting layer formed on the lower binding layer; a light-emitting layer formed on the light-emitting layer; a contact layer, which is a structured oxide film prepared by the second conductive layer and connected to Oxide Contact Structure, 200524177 Patent range: The thickness of the private electrode ranges from 1 to 10,000 nanometers. 1 · A kind of light-emitting diode structure, including a substrate prepared from an insulating and transparent substrate, and a buffer formed on the substrate. -A semiconductor compound material contact layer (Con truct iv, e COCS) of a type formed on the buffer upper and lower bundles, a binding sound; a conductive film formed on the contact layer A first electrode formed on the lower tie layer and isolated from the light emitting layer, the upper tie layer, the contact layer and the conductive film; and a second electrode formed on the contact layer. 1 3. The light-emitting diode structure as described in item 2 of the patent application scope, wherein the structured oxide film contact layer is formed by stacking four materials including P + GaN, Yi inN, Y2Inxl (; a, and Y3inN). 0, η, 1, 2, Y1, B, and B can be P-type or N-type dopants. 1 4 · f The light-emitting diode structure described in item 13 of the patent scope, in which The conductivity of the contact layer of the oxidized thin film is P-type, N-type, or I-type. • The light-emitting diode structure described in item 13 of the scope of patent application, where

Page 21 200524177 VI. Scope of patent application The thickness of the contact layer of the 5H structured oxide film is between 0.1 and 1,000 nanometers. 16 · The light-emitting diode structure according to item 12 of the scope of patent application, wherein the substrate is selected from the group consisting of alumina (A 12 03, sapphire), aluminum nitride (A1N), and gallium nitride (GaN). , Spinel, lithium gallium oxide (L1 G a 〇 3) or lithium aluminum oxide (L i A 1 〇 3) insulating material is prepared. 17 · The light-emitting diode structure as described in item 12 of the patent claim, wherein the buffer layer is prepared by AlxInyGamN, where χ ^ 〇; 〇; 〇 Sx + y < 1. > 1 8 The light-emitting diode structure as described in item 12 of the scope of patent application, wherein the binding layer under 5H is prepared by a group III-V element compound containing gallium nitride (G a N). The compound can be represented by the general formula of AlJnpGamN, where '0-0; p ^ 〇; 〇'o + p <l; o > x. 19 · The light-emitting diode structure as described in item 12 of the scope of patent application, wherein the conductive thin film is made of indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), Chromium (Cr), Diamond (Co), Record (Cd), 3 Lu (A1), Vanadium (V), Silver (Ag), Titanium (Ti), Tungsten (W), Platinum (Pt), The transparent oxide conductive layer of one-, two- or more-layer oxide films or alloys formed by metals such as metals (Pd), osmium (Rh) or ruthenium (ru). 20. The light-emitting diode structure according to item 19 in the scope of the patent application, wherein the thickness of the conductive thin film is between 1,000 nm. 21 · The light-emitting diode structure according to item 12 of the scope of the patent application, wherein the first electrode or the second electrode is a one-element or two-element element formed of a metal

200524177 VI. Metal electrodes for patent applications or alloys of binary or more, the metal is selected from indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr) , Cobalt (Co), cadmium (Cd), aluminum (A1), vanadium (V), silver (Ag), titanium (Ti), tungsten (W), platinum (Pt), palladium (Pd), rhodium (Rh) Or at least one of ruthenium (Ru)-〇2 2 · The light-emitting diode structure described in item 21 of the patent application scope, wherein the thickness of the first electrode or the second electrode is in the range of 10, 10 〇〇nm. 2 3 · A light emitting diode structure including: a substrate prepared from a conductive semiconductor substrate; a buffer layer formed on the substrate; a buffer layer formed above and below the buffer; A light-emitting layer on the lower binding layer; a binding layer formed on the light-emitting layer; a contact layer formed on the upper binding layer, which is a structural oxide prepared from a second conductive semiconductor compound material Thin film contact layer (Constructive Oxide Contact Structure COCS); 'a conductive film formed on the contact layer; a formed on the lower tie layer, and the light emitting layer, the upper tie layer, the contact layer and the conductive A thin film-isolated first electrode; and a second electrode formed on the contact layer. 24. The light-emitting diode structure described in item 23 of the scope of patent application, wherein

200524177 VI. Application scope of patent No. 5 paste: The structured oxide film contact layer is formed by stacking four materials, including VnN and VnN. Its medium = ^^ 1 h and ^ can be P-type or N-type dopants. -The light-emitting diode structure described in item 24 of the 25. = t-Li range, wherein the conductivity of the contact layer of the% emulsified film is P-type, N-type, or □ -type. With the light-emitting diode structure described in "period 24" ... k ^ The thickness of the milk film contact layer ranges from 0.1 to L 0 0 0 nm 27. The light-emitting diode described in item 23 of the scope of patent application Polar body structure, wherein the substrate is selected from the group consisting of silicon carbide (sic), zinc oxide (Zn0), Shi Xi / (= i), gallium phosphide (GaP), gallium arsenide (GaAs), and zinc selenide (ZnSe ), Made of at least one of indium indium (InP) or silicon-doped conductive gallium nitride (GaN). 28. The light-emitting diode structure according to item 23 of the patent application scope, wherein the buffer The layer is prepared by AlxIriyGa ^ N, where x $ 〇; y $ 〇; 〇 $ X + y < l 〇 3 0 The conductive thin film according to item 23 of the scope of patent application is made by Indium (In), tin (Sn 2 9) The light-emitting diode structure as described in item 23 of the patent application range, wherein the lower binding layer is prepared by a group II element compound containing gallium nitride (GaN) This compound can be represented by the general chemical formula of AlcInpGaitpN, among which 0 $ 0; p $ 0; 0 < o + P <1; 〇 > x. Light-emitting diode structure, where ... ........ Zinc (Zn), Nickel (Ni), Gold (Au), Chromium (Cr), Vanadium (V), Silver (Ag), Titanium (Ti)

Drill (Co), Knitting (Cd), Ming (A1), Tungsten (W), Platinum (Pt), Palladium (Pd), I 1 1 11 11 1 Page 24 200524177 6. Scope of patent application. 姥（Rh ) Or ruthenium (ru) and other metals formed of one, two or more oxidized thin film or alloy transparent oxide conductive layer. 3 1 · The light-emitting diode structure as described in item 30 of the scope of patent application, wherein the thickness of the conductive thin film ranges from 1 to 1,000 nanometers. 3 2 · The light-emitting diode structure according to item 23 of the scope of the patent application, wherein the first electrode or the second electrode is a metal electrode formed by a one-, two-, or more-alloy metal alloy, The metal system is selected from indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (Co), cadmium (cd), aluminum (A1), vanadium (V), at least two of silver (Ag), titanium (Ti), tungsten (W), platinum (pt), palladium (pd), rhodium (Rh), or ruthenium (Ru). 3 3. The light-emitting diode structure as described in item 32 of the patent application, wherein the thickness of the first electrode or the second electrode is in the range of 10,000 nm. 34 · A light-emitting diode structure including: a substrate prepared from an insulating and light-transmitting substrate; a buffer layer formed on the substrate; a buffer layer formed above and below the buffer; A light-emitting layer on the binding layer; a binding layer formed on the light-emitting layer; a second binding body formed on the upper binding layer (Construct.ve 〇Xlde Contact Structure,

Page 25 200524177 VI. Scope of patent application-a conductive thin film formed on the contact layer;-formed on the lower tie layer, and in contact with the light emitting layer, the upper tie layer, thallium contact layer and the conductive type A first electrode separated by a thin film; and a second electrode formed on the contact layer. 35 ·, application for the light-emitting diode structure described in the scope of item 34, wherein the ° structured oxide thin film contact layer is made of four materials including P + GaN, Yi InN, Y2 Ir ^ Gap χ1N & Υ3ΙηΝ They are stacked, where 0 $ χι ^, γι, h, and γ3 can be P-type or N-type dopants. 36. The light-emitting diode structure described in item 35 of the scope of application for a patent, wherein the conductivity of the contact layer of the "Hie structured oxide film" is P-type, N-type, or I-type. 37. The light-emitting diode structure according to item 35 of the scope of the patent application, wherein the thickness of the contact layer of the "Hei-structured oxide film" is in the range of 0.1 to 1.0 nm. 38. The light-emitting diode structure as described in item 34 of the scope of patent application, wherein the substrate is made of a material selected from the group consisting of Al2O3 (sapphire), nitride (A1N), gallium nitride (GaN), Spinel, lithium gallium oxide (L1 Ga03), or lithium aluminum oxide (L1A03) are prepared from at least one of the insulating materials. 39. The light-emitting diode structure according to item ^ in the scope of the patent application, wherein the buffer layer is prepared by AlxInyGai_x_yN, where X SO; y S 0; 0 + y < 1. 4 〇 · The light-emitting diode structure described in item 34 of the scope of Shenqing patent, where the binding layer under ° H is formed by the I I I _ V private element containing the gasification record (G a Ν)

200524177 VI. Application for Patent Scope The compound can be prepared by 41.1111 ^ 31_. The chemical formula of _1 ^ means' wherein 0 $ 〇; p $ 0; 〇'〇 + p <l; 0 > x. 41. The light-emitting diode structure according to item 34 of the scope of the patent application, wherein the conductive thin film is made of an alloy of one, two, or more yuan formed of a metal having a high reflectance. 4 2 · The light-emitting diode structure described in item 40 of the scope of the patent application, wherein the metal having a southern reflectance is selected from the group consisting of Shao (A1), silver (Ag), white (Pt), and palladium ( Pd), rhodium (Rh), ruthenium (Ru), titanium (Ti), gold (Au),

At least one of nickel (Ni) or copper (cu). 4 3. The light-emitting diode structure according to item 34 of the scope of the patent application, wherein the first electrode or the second electrode is a metal electrode of a one-, two-, or more-alloy alloy formed of a metal, and the metal Is selected from indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (Co), cadmium (Cd), aluminum (A1), vanadium ( V), silver (Ag), titanium (Ti), thorium (W), uranium (pt), | bar (Pd), thorium (Rh), or ruthenium (Ru) at least one of them ___ 〇4 4 · If applied The light-emitting diode structure described in item 43 of the patent scope, wherein the thickness of the first electrode or the second electrode is in the range of 10,000 nm.

between.

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