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SG10202005368UA - Memory device and method of operating the memory device - Google Patents

Memory device and method of operating the memory device

Info

Publication number
SG10202005368UA
SG10202005368UA SG10202005368UA SG10202005368UA SG10202005368UA SG 10202005368U A SG10202005368U A SG 10202005368UA SG 10202005368U A SG10202005368U A SG 10202005368UA SG 10202005368U A SG10202005368U A SG 10202005368UA SG 10202005368U A SG10202005368U A SG 10202005368UA
Authority
SG
Singapore
Prior art keywords
memory device
operating
memory
Prior art date
Application number
SG10202005368UA
Inventor
Gon Yang In
Original Assignee
Sk Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Hynix Inc filed Critical Sk Hynix Inc
Publication of SG10202005368UA publication Critical patent/SG10202005368UA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
SG10202005368UA 2019-08-16 2020-06-08 Memory device and method of operating the memory device SG10202005368UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190100570A KR20210020697A (en) 2019-08-16 2019-08-16 Memory device and operating method thereof

Publications (1)

Publication Number Publication Date
SG10202005368UA true SG10202005368UA (en) 2021-03-30

Family

ID=74567435

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202005368UA SG10202005368UA (en) 2019-08-16 2020-06-08 Memory device and method of operating the memory device

Country Status (4)

Country Link
US (1) US11270760B2 (en)
KR (1) KR20210020697A (en)
CN (1) CN112397126B (en)
SG (1) SG10202005368UA (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200141304A (en) * 2019-06-10 2020-12-18 에스케이하이닉스 주식회사 Semiconductor device and operating method of semiconductor device
KR20210112661A (en) * 2020-03-05 2021-09-15 에스케이하이닉스 주식회사 Memory device and operating method thereof
US11636897B2 (en) 2021-03-03 2023-04-25 Sandisk Technologies Llc Peak current and program time optimization through loop dependent voltage ramp target and timing control
US11972801B2 (en) 2022-02-07 2024-04-30 Sandisk Technologies, Llc Program voltage dependent program source levels

Family Cites Families (20)

* Cited by examiner, † Cited by third party
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JP3836985B2 (en) * 1998-09-07 2006-10-25 松下電器産業株式会社 Semiconductor device
KR100635205B1 (en) 2004-11-15 2006-10-16 에스티마이크로일렉트로닉스 엔.브이. Method of reading a flash memory device
KR100729351B1 (en) 2004-12-31 2007-06-15 삼성전자주식회사 Nand flash memory device and program method thereof
KR100669349B1 (en) * 2005-12-02 2007-01-16 삼성전자주식회사 Flash memory device and read method thereof
KR100822805B1 (en) * 2006-10-20 2008-04-18 삼성전자주식회사 Flash memory device having multiple speed operation mode
KR101448851B1 (en) 2008-02-26 2014-10-13 삼성전자주식회사 Programming method of Non-volatile memory device
KR101575851B1 (en) * 2009-03-13 2015-12-10 삼성전자주식회사 Non-volatile memory device and program method thereof
JP2011065708A (en) * 2009-09-16 2011-03-31 Toshiba Corp Nonvolatile semiconductor memory device
KR20120121166A (en) * 2011-04-26 2012-11-05 에스케이하이닉스 주식회사 Semiconductor device and operating method thereof
KR101184539B1 (en) * 2011-06-28 2012-09-19 에스케이하이닉스 주식회사 Semiconductor memory device and method of operating thereof
KR20130072087A (en) * 2011-12-21 2013-07-01 에스케이하이닉스 주식회사 Nonvolatile memory device, method of fabricating the same, and method of operating the same
KR101925018B1 (en) * 2012-06-19 2018-12-05 삼성전자주식회사 Non-volatile memory device
KR101999764B1 (en) * 2012-08-24 2019-07-12 에스케이하이닉스 주식회사 Semiconductor memory device
KR20140026115A (en) * 2012-08-24 2014-03-05 에스케이하이닉스 주식회사 Semiconductor memory device and operating method thereof
KR102081757B1 (en) 2013-06-26 2020-02-26 삼성전자주식회사 Nonvolatile memory device and program method thereof
KR102161737B1 (en) * 2013-12-02 2020-10-05 삼성전자주식회사 Bit line sensing method of semiconduct memory device
CN103956187B (en) * 2014-05-12 2017-07-18 北京兆易创新科技股份有限公司 A kind of dynamic preliminary filling control circuit and flash-memory storage system
CN106373615A (en) * 2015-07-20 2017-02-01 毛冬冬 Design of OTP memory with characteristic of regulation of readout speed with bit line load
KR20180086047A (en) * 2017-01-20 2018-07-30 삼성전자주식회사 A nonvolatile memory device for varying a recovery interval and an operation method thereof
US11361819B2 (en) * 2017-12-14 2022-06-14 Advanced Micro Devices, Inc. Staged bitline precharge

Also Published As

Publication number Publication date
CN112397126B (en) 2024-04-23
US11270760B2 (en) 2022-03-08
CN112397126A (en) 2021-02-23
KR20210020697A (en) 2021-02-24
US20210050051A1 (en) 2021-02-18

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