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SE9800035D0 - Process for producing thin metal oxide films on substrates - Google Patents

Process for producing thin metal oxide films on substrates

Info

Publication number
SE9800035D0
SE9800035D0 SE9800035A SE9800035A SE9800035D0 SE 9800035 D0 SE9800035 D0 SE 9800035D0 SE 9800035 A SE9800035 A SE 9800035A SE 9800035 A SE9800035 A SE 9800035A SE 9800035 D0 SE9800035 D0 SE 9800035D0
Authority
SE
Sweden
Prior art keywords
metal oxide
substrate
substrates
thin metal
oxide films
Prior art date
Application number
SE9800035A
Other languages
Swedish (sv)
Inventor
Lionel Vayssieres
Sten-Eric Lindquist
Anders Hagfeldt
Original Assignee
Lionel Vayssieres
Sten Eric Lindquist
Anders Hagfeldt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lionel Vayssieres, Sten Eric Lindquist, Anders Hagfeldt filed Critical Lionel Vayssieres
Priority to SE9800035A priority Critical patent/SE9800035D0/en
Publication of SE9800035D0 publication Critical patent/SE9800035D0/en
Priority to AU20839/99A priority patent/AU2083999A/en
Priority to PCT/SE1999/000014 priority patent/WO1999035312A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1516—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising organic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hybrid Cells (AREA)

Abstract

A process for producing at least one epitaxial, nanostructured thin film (4) of metal oxide and/or a hydrated metal oxide on at least one substrate (3) placed in a container (1) and a substrate/thin film thereof, said process comprising placing said substrate (3) at any location in said container (1) containing a water solution (2), such that a covering area of said substrate (3) being covered by said solution (2), containing at least one metal salt and additionally can contain other salts, pH-regulator(s), complexant(s), or molecules, whereby from said substrate (3) particles of a metal oxide of the metal from said metal salt is grown, forming said film (4) on said covering area of said substrate (3).
SE9800035A 1998-01-09 1998-01-09 Process for producing thin metal oxide films on substrates SE9800035D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9800035A SE9800035D0 (en) 1998-01-09 1998-01-09 Process for producing thin metal oxide films on substrates
AU20839/99A AU2083999A (en) 1998-01-09 1999-01-08 Process for producing nanostructured metal oxide thin films on substrates, substrates and films thereof
PCT/SE1999/000014 WO1999035312A1 (en) 1998-01-09 1999-01-08 Process for producing nanostructured metal oxide thin films on substrates, substrates and films thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9800035A SE9800035D0 (en) 1998-01-09 1998-01-09 Process for producing thin metal oxide films on substrates

Publications (1)

Publication Number Publication Date
SE9800035D0 true SE9800035D0 (en) 1998-01-09

Family

ID=20409824

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9800035A SE9800035D0 (en) 1998-01-09 1998-01-09 Process for producing thin metal oxide films on substrates

Country Status (3)

Country Link
AU (1) AU2083999A (en)
SE (1) SE9800035D0 (en)
WO (1) WO1999035312A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1264001A1 (en) 2000-01-25 2002-12-11 Boston Scientific Limited Manufacturing medical devices by vapor deposition
DE10053276C1 (en) * 2000-10-27 2002-01-10 Dornier Gmbh Electrochemical capacitor used as double-layer capacitor or super-capacitor comprises single cell(s) having electrode made from nano-structured film, counter electrode, and thin film electrolyte covering electrode
SE522614C2 (en) * 2001-06-05 2004-02-24 Ivf Industriforskning Och Utve Electrochrome display with a porous nanostructured electrode and method for manufacturing electrochrome display
US6914279B2 (en) 2002-06-06 2005-07-05 Rutgers, The State University Of New Jersey Multifunctional biosensor based on ZnO nanostructures
US8377683B2 (en) 2002-06-06 2013-02-19 Rutgers, The State University Of New Jersey Zinc oxide-based nanostructure modified QCM for dynamic monitoring of cell adhesion and proliferation
GB2412119B (en) * 2004-03-15 2008-06-11 Hydrogen Solar Ltd Method
US7489432B2 (en) * 2005-03-25 2009-02-10 Ricoh Company, Ltd. Electrochromic display device and display apparatus
CZ2005294A3 (en) * 2005-05-09 2007-01-31 Bvt Technologies A. S. Nanostructured working electrode of electrochemical sensor, process for its manufacture and sensor comprising such working electrode
WO2009032654A1 (en) 2007-08-31 2009-03-12 Washington University Synthesis of nanostructured photoactive films with controlled morphology by a flame aerosol reactor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (en) * 1977-11-09 1979-05-11 Philips Nv METHOD FOR EPITAXIAL DEPOSITION OF SEVERAL LAYERS.
DE2922900A1 (en) * 1979-06-06 1980-12-18 Licentia Gmbh Soln. for silicon, tin or titanium oxide film formation - by hydrolysis, contains silicone oil to prevent striation or sun-burst effect

Also Published As

Publication number Publication date
AU2083999A (en) 1999-07-26
WO1999035312A1 (en) 1999-07-15

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