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KR970702574A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법

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Publication number
KR970702574A
KR970702574A KR1019960705845A KR19960705845A KR970702574A KR 970702574 A KR970702574 A KR 970702574A KR 1019960705845 A KR1019960705845 A KR 1019960705845A KR 19960705845 A KR19960705845 A KR 19960705845A KR 970702574 A KR970702574 A KR 970702574A
Authority
KR
South Korea
Prior art keywords
semiconductor
region
junction
particle beam
semiconductor device
Prior art date
Application number
KR1019960705845A
Other languages
English (en)
Other versions
KR100394393B1 (ko
Inventor
가즈히사 사카모토
Original Assignee
사도우 겡 이찌로
로무 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사도우 겡 이찌로, 로무 가부시기가이샤 filed Critical 사도우 겡 이찌로
Publication of KR970702574A publication Critical patent/KR970702574A/ko
Application granted granted Critical
Publication of KR100394393B1 publication Critical patent/KR100394393B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)

Abstract

본 발명의 목적은 신속한 스위칭특성과 높은 유전체 브레이크 다운 강도 또는 적은 누설전류특성을 모두 갖는 반도체장치와 이러한 개선된 반도체장치를 제조하는 방법을 제공하는 것이다. 본 발명에 따른 반도체장치는 반도체기판과, 상기 반도체기판 상에 형성되고, 상기 반도체기판의 표면을 따라 형성되는 pn접합을 가지며, 이 pn접합의 수직방향으로만 입자선을 조사하여 결정홈이 형성되는 반도체층과, 상기 반도체층의 기판표면에 배치되어 상기 pn접합 이외의 영역에서 소자의 기판표면에 대한 입자선의 노출을 억제하는 질화실리콘막을 구비한다.

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 반도체기판과, 상기 반도체기판 상에 형성되고, 상기 반도체기판의 표면을 따라 형성되는 pn접합을 가지며, 이 pn접합의 수직방향으로만 입자선을 조사하여 결정홈이 형성되는 반도체층과, 상기 반도체층의 기판표면에 배치되어 상기 pn접합 이외의 영역에서 소자의 기판표면에 대한 입자선의 노출을 억제하는 질화실리콘막을 구비하는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 소자는 바이폴라트랜지스터이고, 상기 결정홈은 상기 트랜지스터의 베이스영역과 상기 베이스영역 아래의 콜렉터영역 모두에 형성되며, 상기 질화실리콘막은 상기 베이스영역 주변 밖의 부분에서 상기 기판표면에 위치하는 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 소자는 수직 MOSFET로서, 제1도체형의 반도체층과 제2도체형의 반도체영역을 포함하며, 제2도체형의 반도체영역은 상기 반도체층에 배치되는 한편, 양쪽 단부에 위치하는 채널영역과 상기 제2도체형의 반도체영역 양쪽 단부에 위치하는 소스영역을 가지며, 상기 결정홈은 상기 제2도체형이 반도체영역 내부 및 아래에 모두 형성되고, 상기 질화실리콘막은 상기 수직 MOSFET의 게이트전극 위에 형성되는 것을 특징으로 하는 반도체장치.
  4. 반도체층에 대해 입자선을 조사하여 캐리어수명을 제어하는 반도체장치의 제조방법에 있어서, 마스크로서 사용되는 질화실리콘막을 통해 상기 반도체에 입자선을 선택적으로 조사하는 단계를 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제4항에 있어서, 상기 입자선의 조사는 상기 반도체층의 기판표면을 따라 pn접합이 형성되는 영역에 선택적으로 행해지는 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960705845A 1995-02-20 1996-02-19 반도체장치및그제조방법 KR100394393B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7031148A JP2883017B2 (ja) 1995-02-20 1995-02-20 半導体装置およびその製法
JP95-031148 1995-02-20

Publications (2)

Publication Number Publication Date
KR970702574A true KR970702574A (ko) 1997-05-13
KR100394393B1 KR100394393B1 (ko) 2004-02-18

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Country Status (7)

Country Link
US (1) US5808352A (ko)
EP (1) EP0756757B1 (ko)
JP (1) JP2883017B2 (ko)
KR (1) KR100394393B1 (ko)
CN (1) CN1106686C (ko)
DE (1) DE69621385T2 (ko)
WO (1) WO1996026536A1 (ko)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3394383B2 (ja) * 1996-03-18 2003-04-07 三菱電機株式会社 サイリスタの製造方法およびサイリスタ
JPH10270451A (ja) * 1997-03-25 1998-10-09 Rohm Co Ltd 半導体装置およびその製造方法
DE19726126A1 (de) * 1997-06-20 1998-12-24 Telefunken Microelectron Bipolarer Schalttransistor mit verringerter Sättigung
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6674064B1 (en) 2001-07-18 2004-01-06 University Of Central Florida Method and system for performance improvement of photodetectors and solar cells
JP4872190B2 (ja) * 2004-06-18 2012-02-08 トヨタ自動車株式会社 半導体装置
JP4775539B2 (ja) * 2005-03-22 2011-09-21 サンケン電気株式会社 半導体装置の製法
JP2006344782A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd チップ型半導体素子とその製造方法
JP5036327B2 (ja) * 2007-01-23 2012-09-26 三菱電機株式会社 半導体装置及びその製造方法
KR101614565B1 (ko) * 2008-09-01 2016-04-21 로무 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2010109031A (ja) * 2008-10-29 2010-05-13 Sanken Electric Co Ltd 半導体装置及びその製造方法
CN102422416B (zh) 2009-09-07 2014-05-14 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置
EP2515328B1 (en) 2009-12-15 2016-05-04 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
JP5605073B2 (ja) * 2010-08-17 2014-10-15 株式会社デンソー 半導体装置
US8921931B2 (en) * 2012-06-04 2014-12-30 Infineon Technologies Austria Ag Semiconductor device with trench structures including a recombination structure and a fill structure
JP6221436B2 (ja) * 2013-07-10 2017-11-01 富士電機株式会社 超接合ｍｏｓｆｅｔとその製造方法およびダイオードを並列接続させた複合半導体装置
JP6183080B2 (ja) * 2013-09-09 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6119593B2 (ja) * 2013-12-17 2017-04-26 トヨタ自動車株式会社 半導体装置
JP6107767B2 (ja) 2013-12-27 2017-04-05 トヨタ自動車株式会社 半導体装置とその製造方法
DE112015000206T5 (de) * 2014-10-03 2016-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6611532B2 (ja) 2015-09-17 2019-11-27 ローム株式会社 半導体装置および半導体装置の製造方法
JP2017168561A (ja) * 2016-03-15 2017-09-21 富士電機株式会社 半導体装置及びその製造方法
CN106920742B (zh) * 2017-01-22 2020-05-08 北京工业大学 一种基于电子辐照控制pn结缺陷能级的方法
US10186586B1 (en) * 2017-09-26 2019-01-22 Sanken Electric Co., Ltd. Semiconductor device and method for forming the semiconductor device
US20210391481A1 (en) * 2018-11-20 2021-12-16 Abb Power Grids Switzerland Ag Power Semiconductor Device and Shadow-Mask Free Method for Producing Such Device
CN116153967B (zh) * 2023-02-09 2023-12-22 上海功成半导体科技有限公司 超结器件及其制作方法和电子器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642206A1 (de) * 1975-12-12 1977-06-23 Ibm Verfahren und aufbau einer halbleitervorrichtung mit genau gesteuerter lebensdauer der ladungstraeger
US4165517A (en) * 1977-02-28 1979-08-21 Electric Power Research Institute, Inc. Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
FR2388413A1 (fr) * 1977-04-18 1978-11-17 Commissariat Energie Atomique Procede de commande de la migration d'une espece chimique dans un substrat solide
JPS5515237A (en) * 1978-07-19 1980-02-02 Toshiba Corp Semiconductor device
JPS57197848A (en) * 1981-05-29 1982-12-04 Toshiba Corp Semiconductor device and manufacture thereof
JPS5817678A (ja) * 1981-07-24 1983-02-01 Toshiba Corp 半導体装置の製造方法
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPS6265364A (ja) * 1985-09-17 1987-03-24 Toshiba Corp 半導体装置の製造方法
JPS62208674A (ja) * 1986-03-08 1987-09-12 Agency Of Ind Science & Technol 半導体装置
JPS62298120A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2883017B2 (ja) 1999-04-19
DE69621385D1 (de) 2002-07-04
CN1146826A (zh) 1997-04-02
EP0756757A1 (en) 1997-02-05
DE69621385T2 (de) 2002-11-14
EP0756757B1 (en) 2002-05-29
JPH08227895A (ja) 1996-09-03
US5808352A (en) 1998-09-15
KR100394393B1 (ko) 2004-02-18
WO1996026536A1 (en) 1996-08-29
CN1106686C (zh) 2003-04-23

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