KR20210081669A - Electrode stack structure and method of fabricating the same - Google Patents

Abstract

An electrode laminate of the present invention includes: a base; a metal layer disposed on the base; and a conductive upper part anti-reflection layer disposed on the metal layer, wherein the conductive upper part anti-reflection layer includes a copper-metal-oxygen composite, the metal included in the copper-metal-oxygen composite includes at least one selected from a group consisting of chromium (Cr), molybdenum (Mo), tungsten (W), magnesium (Mg), calcium (Ca), lanthanum (La), cesium (Ce), and indium (In), and a rate of reflection may be 10% or less, which may have improved electrical conductivity and optical properties.

Description

Electrode laminate and its manufacturing method {ELECTRODE STACK STRUCTURE AND METHOD OF FABRICATING THE SAME}

The present invention relates to a method for manufacturing an electrode laminate. More specifically, the present invention relates to a method for manufacturing an electrode laminate including a plurality of conductive layers.

As the touch panel, a capacitive touch panel is typically used. In the capacitive touch panel, a position is detected by detecting a change in capacitance between electrodes when a finger touches it. Due to the convenience of the manufacturing method and excellent sensing power, the field of application thereof is gradually expanding.

Indium tin oxide (ITO), which is most widely used as a transparent electrode for such a touch panel, is expensive and easily damaged physically by bending and bending of the substrate, thereby deteriorating its properties as an electrode, and thereby There is a problem that it is not suitable for flexible) devices. In addition, when applied to a large-sized touch panel, a problem occurs due to high resistance.

In order to solve these problems, active research on alternative electrodes is being conducted. In particular, it is intended to replace ITO by forming a metal material in the shape of an electrode, but in the case of metal, a problem may occur in that the pattern of the transparent electrode is visible due to increased visibility due to light reflection.

For example, Korean Patent Registration No. 10-2015864 discloses a touch sensor including a sensing electrode in which a first transparent conductive oxide pattern, a metal pattern, and a second transparent conductive oxide pattern are stacked.

Korean Patent Registration No. 10-2015864

One object of the present invention is to provide an electrode laminate having improved electrical and optical properties.

One object of the present invention is to provide a method of manufacturing an electrode laminate having improved electrical and optical properties.

1. Substrate; a metal layer disposed on the substrate; and a conductive upper anti-reflection layer disposed on the metal layer, wherein the reflectance is 10% or less, the conductive upper anti-reflection layer comprises a copper-metal-oxygen complex, and the metal included in the copper-metal-oxygen complex is containing at least one selected from the group consisting of chromium (Cr), molybdenum (Mo), tungsten (W), magnesium (Mg), calcium (Ca), lanthanum (La), cesium (Ce) and indium (In), electrode stack.

2. The electrode laminate according to the above 1, wherein the reflectance is 2 to 10%.

3. The electrode laminate according to the above 1, wherein the copper-metal-oxygen composite includes an alloy or mixture of a copper-oxygen compound and a metal-oxygen compound.

4. The electrode laminate according to the above 1, wherein the ratio of the elements included in the copper-metal-oxygen complex among the total elements included in the conductive upper antireflection layer is 50 to 80 atomic% (at%) or less.

5. The electrode laminate according to 1 above, wherein the conductive upper anti-reflection layer has a sheet resistance of 0.1 to 0.2 Ω/□.

6. The electrode laminate according to the above 1, wherein the thickness of the conductive upper anti-reflection layer is 10 to 60 nm.

7. The electrode laminate according to 1 above, further comprising a lower anti-reflection layer disposed between the substrate and the metal layer.

8. The electrode laminate according to 1 above, wherein the metal layer includes copper or a copper alloy.

9. forming a metal layer on the substrate; and forming a conductive upper anti-reflection layer including a copper-metal-oxygen composite on the metal layer at an oxygen partial pressure of 0.4 sccm or less, wherein the metal included in the copper-metal-oxygen composite is chromium (Cr), molybdenum A method of manufacturing an electrode laminate selected from the group consisting of (Mo), tungsten (W), magnesium (Mg), calcium (Ca), lanthanum (La), cesium (Ce), and indium (In).

10. The method according to 9 above, wherein the forming of the conductive upper anti-reflection layer includes a sputtering process.

11. The method according to 10 above, wherein the forming of the conductive upper anti-reflection layer is performed by applying a DC power of 4 to 7 kW.

The electrode laminate according to the embodiments of the present invention includes a conductive upper anti-reflection layer having a reflectance of 10% or less, and the conductive upper anti-reflection layer includes a copper-metal-oxygen composite, so that electrical conductivity and reflection of the electrode laminate Prevention properties can be improved at the same time.

For example, the electrode laminate may have electrical conductivity and anti-reflection properties by controlling the ratio of elements occupied by the copper-metal-oxygen complex included in the conductive upper anti-reflection layer, and the sheet resistance and thickness of the conductive upper anti-reflection layer. can be improved at the same time.

In the method of manufacturing an electrode stack according to embodiments of the present invention, an electrode stack satisfying the reflectance range can be easily realized by adjusting the oxygen partial pressure condition to a specific range when the conductive upper anti-reflection layer is formed.

1 and 2 are schematic cross-sectional views illustrating an electrode stack according to an embodiment of the present invention.
3 and 4 are schematic cross-sectional views illustrating an electrode stack on which a pattern is formed according to an embodiment of the present invention.

The electrode stack according to embodiments of the present invention may include a conductive upper anti-reflection layer having a reflectance of 10% or less and including a copper-metal-oxygen complex. Accordingly, it is possible to easily implement an electrode laminate having improved electrical conductivity and optical properties at the same time.

In addition, by forming the conductive upper anti-reflection layer under a specific oxygen partial pressure condition, the reflectance range may be easily realized.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. Preferred embodiments of the present invention are presented below, but these examples are merely illustrative of the present invention and do not limit the appended claims, and various examples of embodiments within the scope and spirit of the present invention It is obvious to those skilled in the art that changes and modifications are possible, and it is natural that such variations and modifications belong to the appended claims.

1 to 2 are schematic cross-sectional views showing an electrode stack according to embodiments of the present invention.

Referring to FIG. 1 , an electrode stack 100 according to example embodiments includes a substrate 110 , a metal layer 120 disposed on the substrate 110 , and a conductive upper anti-reflection layer disposed on the metal layer 120 . 130 may be included.

For example, the substrate 110 may support the metal layer 120 and the conductive upper anti-reflection layer 130 . A non-limiting example of the substrate 110 may be a glass substrate or a plastic substrate.

For example, the metal layer 120 may perform a function of transmitting an electrical signal. For example, the metal layer 120 may perform a function of detecting a stimulus caused by contact with an input device such as a finger or a specific stimulus generated from the outside, and transmitting an electrical signal generated therefrom.

For example, the metal layer 120 may include a first metal layer extending in one direction and a second metal layer extending in another direction crossing the one direction.

According to some exemplary embodiments, the metal layer 120 may include a metal material having excellent electrical conductivity. For example, the metal layer 120 may include at least one of Cu, Au, Ag, Al, Ti, Ni, or an alloy thereof. More preferably, the metal layer 120 may include copper or a copper alloy.

For example, when the metal layer 120 includes copper or a copper alloy, unlike the case where the metal layer 120 includes ITO, etc., it may have excellent ductility properties. Accordingly, the electrode stack 100 including the same can be more easily applied to a flexible display device or the like.

In some exemplary embodiments, the reflectance of the electrode stack 100 including the conductive upper anti-reflection layer 130 may be about 10% or less, and more preferably, about 2 to 10%. In the above range, while effectively preventing the metal layer 120 from being visually recognized, the electrical conductivity of the metal layer 120 can be improved.

For example, when the reflectance of the electrode laminate 100 exceeds the above range, the metal layer 120 is visually recognized, the optical properties of the electrode laminate 100 may decrease, and when it is less than the above range, the antireflection layer ( 130) may be degraded.

For example, the conductive upper anti-reflection layer 130 may be disposed on the metal layer 120 . For example, the conductive upper anti-reflection layer 130 may prevent the metal layer 120 from being visually recognized by reducing the reflectance of the metal layer 120 while maintaining the electrical conductivity of the metal layer 120 . Accordingly, the electrical conductivity and optical properties of the electrode laminate 100 may be simultaneously improved.

For example, the conductive upper anti-reflection layer 130 includes a copper-metal-oxygen composite, and the metals included in the copper-metal-oxygen composite are chromium (Cr), molybdenum (Mo), tungsten (W), and magnesium. It may include at least one selected from the group consisting of (Mg), calcium (Ca), lanthanum (La), cesium (Ce), and indium (In).

For example, the copper-metal-oxygen complex may refer to a copper-metal alloy, a copper atom, or a conductive compound in which an oxygen atom is bonded or doped between metal atoms. For example, the copper-metal-oxygen composite may mean a term excluding oxide, copper oxide, or metal oxide of a copper-metal alloy that is an insulating compound.

In some embodiments, the copper-metal-composite may include an alloy or a mixture of a copper-oxygen compound and a metal-oxygen compound. For example, the copper-oxygen compound may mean a compound in which an oxygen atom is bonded or doped between copper crystals or copper atoms, and the metal-oxygen compound is a metal crystal or a compound in which an oxygen atom is bonded or doped between metal atoms. It may mean a conductive compound.

The copper-oxygen compound and the metal-oxygen compound may also refer to terms excluding copper oxide and metal oxide, which are insulating materials.

For example, the copper-oxygen compound may reduce the reflectance of the metal layer 120 and improve the electrical conductivity of the metal layer 120 . Accordingly, electrical conductivity and optical properties of the electrode laminate 100 may be simultaneously improved.

In exemplary embodiments, the ratio of the elements included in the copper-metal-oxygen complex among the total elements included in the conductive upper anti-reflection layer 130 may be about 50 to 80 atomic% (at%), Preferably, it may be about 60 to 70 atomic% (at%).

For example, when the ratio of the elements included in the copper-metal-oxygen complex among the total elements included in the conductive upper anti-reflection layer 130 satisfies the above range, the conductive upper anti-reflection layer 130 and the electrode laminate The electrical conductivity and anti-reflection properties of (100) can be simultaneously improved.

For example, when the ratio of the elements included in the copper-metal-oxygen complex among the total elements included in the conductive upper anti-reflection layer 130 is less than about 50 atomic %, the conductive upper anti-reflection layer 130 contains As the ratio of the metal element is increased, the anti-reflection properties may be deteriorated, and when it exceeds about 80 atomic %, as discoloration occurs in the conductive upper anti-reflection layer 130 , the reflectance of the electrode stack 100 increases. can be

For example, the conductive upper anti-reflection layer 130 may further include impurities in addition to the copper-metal-oxygen complex. The type of the impurity is not particularly limited, but may include, for example, carbon (C), iron (Fe), aluminum (Al), and the like.

In some exemplary embodiments, the conductive upper anti-reflection layer 130 may be a blackening layer.

In some exemplary embodiments, the sheet resistance of the conductive upper anti-reflection layer 130 may be about 0.1 to 0.2 Ω/□. For example, when the sheet resistance of the conductive upper antireflection layer 130 satisfies the above range, the electrical conductivity and antireflection properties of the electrode stack 100 may be simultaneously improved.

For example, when the sheet resistance exceeds the above range, the electrical conductivity properties may be lowered, such as sensitivity, etc. may be lowered. If the sheet resistance is less than the above range, the ratio of the metal in the conductive upper anti-reflection layer 130 is high, so that the anti-reflection property is reduced. may be lowered.

In some exemplary embodiments, the thickness of the conductive upper anti-reflection layer 130 may be about 10 to 60 nm. For example, when the thickness of the conductive upper anti-reflection layer 130 satisfies the above range, excellent anti-reflection properties may be easily realized due to an appropriate thickness of the conductive upper anti-reflection layer 130 .

For example, when the thickness of the conductive upper anti-reflection layer 130 is less than the above range, the anti-reflection effect of the conductive upper anti-reflection layer 130 may not be sufficiently implemented, and the thickness of the conductive upper anti-reflection layer 130 is within the above range. In the case of exceeding , the reflectance of the electrode stack 100 is rather increased by the metal included in the conductive upper anti-reflection layer 130 , and thus a problem in which the metal layer 120 is visually recognized may occur.

In some exemplary embodiments, referring to FIG. 2 , the electrode stack 100 may further include a lower anti-reflection layer 132 disposed between the substrate 110 and the metal layer 120 .

For example, the conductive upper anti-reflection layer 130 prevents the metal layer 120 from being visually recognized, and the lower anti-reflection layer 132 effectively prevents reflection of light flowing from the substrate 110 toward the metal layer 120 . can For example, the lower anti-reflection layer 132 may effectively prevent reflection of light entering from a display panel or the like positioned on the lower surface of the substrate 110 .

Hereinafter, a method of manufacturing an electrode laminate according to an exemplary embodiment of the present invention will be described.

First, the metal layer 120 may be formed on the substrate 110 . For example, the metal layer 120 may be formed through a deposition process.

In addition, the conductive upper anti-reflection layer 130 may be formed on the metal layer 120 . For example, the conductive upper anti-reflection layer 130 may be formed under the condition that the oxygen partial pressure is about 0.4 sccm or less. As described above, the conductive upper anti-reflection layer 130 includes a copper-metal-oxygen composite, and the metals included in the copper-metal-oxygen composite are chromium (Cr), molybdenum (Mo), tungsten (W), and magnesium. It may include at least one selected from the group consisting of (Mg), calcium (Ca), lanthanum (La), cesium (Ce), and indium (In).

For example, when the oxygen partial pressure condition for forming the conductive upper anti-reflection layer 130 satisfies the above range, the reflectance of the electrode stack 100 may be more easily adjusted to about 10% or less. Accordingly, while effectively preventing the metal layer 120 included in the electrode stack 100 from being visually recognized, the electrical conductivity of the metal layer 120 may be improved.

For example, when the oxygen partial pressure exceeds about 0.4 sccm, reflectance and sheet resistance of the electrode stack 100 may be increased, and electrical conductivity and optical properties may be deteriorated.

According to some exemplary embodiments, for example, the conductive upper anti-reflection layer 130 may be deposited on the metal layer 120 through a sputtering process.

For example, the sputtering process may start from a collision between a gas supplied into a chamber and electrons generated from a cathode (target). For example, while an inert gas is put into the vacuum chamber and DC power (voltage) is applied to the cathode, electrons emitted from the cathode collide with atoms of the inert gas to ionize the inert gas. When the inert gas is ionized and emits electrons, energy is released. At this time, the inert ions in the plasma are accelerated toward the cathode by a large potential difference and collide with the surface of the cathode. A thin film may be formed on (110).

For example, the inert gas may include nitrogen, argon or oxygen. For example, as described above, the characteristics of the antireflection layer can be easily adjusted according to the ratio and partial pressure of oxygen included in the inert gas.

According to some exemplary embodiments, the amount of DC power applied to the cathode may be about 4 kW to 7 kW. It is possible to easily form the conductive upper anti-reflection layer 130 having an appropriate thickness within the above range, and thus, the excellent anti-reflection properties of the conductive upper anti-reflection layer 130 can be easily realized.

In some embodiments, after forming the lower anti-reflection layer 132 on the substrate 110 through the sputtering process, the metal layer 120 may be deposited on the lower anti-reflection layer 132 . In this case, the lower anti-reflection layer 132 may also be formed under the condition that the oxygen partial pressure is about 0.4 sccm or less, similarly to the conductive upper anti-reflection layer 130 .

In some example embodiments, the sputtering process for forming the conductive upper anti-reflection layer 130 and the lower anti-reflection layer 132 may be performed at about 50 to 70° C. for about 100 to 600 seconds. When the above range is satisfied, the conductive upper anti-reflection layer 130 and the lower anti-reflection layer 132 having an appropriate thickness can be easily formed.

For example, when the temperature or process time condition of the vacuum deposition process exceeds the above range, the thickness of the conductive upper anti-reflection layer 130 and the lower anti-reflection layer 132 is excessively increased, and the color is discolored, so that the anti-reflection property is rather may decrease, and when it is less than the above range, the thickness of the conductive upper anti-reflection layer 130 and the lower anti-reflection layer 132 may be thin, and thus the anti-reflection effect may be insignificant.

3 and 4 are schematic cross-sectional views illustrating an electrode stack on which a pattern is formed according to an embodiment of the present invention.

In some exemplary embodiments, referring to FIGS. 3 and 4 , the electrode stack 100 is formed by a photolithography process to form a metal layer 120 and a conductive upper anti-reflection layer 130 , or a lower anti-reflection layer 132 . , the metal layer 120 and the conductive upper anti-reflection layer 130 may be collectively patterned to form the electrode pattern 140 .

For example, referring to FIG. 3 , the metal layer 120 and the conductive upper anti-reflection layer 130 may be simultaneously etched through a photolithography process, and accordingly, the metal pattern layer 125 formed on the substrate 110 . and an electrode pattern 140 including an upper pattern layer 131 may be formed.

For example, referring to FIG. 4 , the lower anti-reflection layer 132 , the metal layer 120 , and the conductive upper anti-reflection layer 130 may be simultaneously etched through a photolithography process, and thus on the substrate 110 . The electrode pattern 140 including the formed lower pattern layer 133 , the metal pattern layer 125 , and the upper pattern layer 131 may be formed.

For example, the electrode stack 100 on which the electrode pattern 140 is formed may be used in a touch panel or the like. For example, the touch panel may be easily applied to a large-area display device or a flexible display device, including the electrode laminate 100 having improved optical and conductive properties.

Hereinafter, experimental examples including preferred embodiments are presented to help the understanding of the present invention, but these examples are merely illustrative of the present invention and do not limit the appended claims, the scope and spirit of the present invention It is obvious to those skilled in the art that various changes and modifications to the embodiments are possible within the scope, and it is natural that such variations and modifications fall within the scope of the appended claims.

Experimental example

Example 1

An upper anti-reflection layer including a copper-rare earth metal-oxygen composite was formed on a glass substrate on which a 200 nm-thick copper metal layer was deposited through a sputtering process. The vacuum deposition was performed using a gas having an oxygen partial pressure of 0.0 to 0.5 sccm, and was performed for 500 sec at room temperature. In this case, the magnitude of DC power applied to the cathode was 4 to 8 kW.

The thickness of the prepared anti-reflection layer, the atomic percent of the metal oxide of the anti-reflection layer, and the reflectance and sheet resistance of the prepared electrode laminate were measured and are shown in Table 2 below. The transmittance of the anti-reflection layer laminate was measured using an integrating sphere photometer, and electrical properties were measured using a 4 probe resistance meter.

Examples 2 to 9 and Comparative Examples 1 to 3

In the case of Examples 2 to 9 and Comparative Examples 2 to 3, an electrode laminate was prepared in the same manner as in Example 1, except that the oxygen partial pressure condition of the gas used in the vacuum deposition process was changed as shown in Table 1 below. , reflectance and sheet resistance were measured.

In the case of Comparative Example 1, the reflectance and sheet resistance were measured without performing a vacuum deposition process of the antireflection layer.

division Configuration Oxygen
partial pressure cathode voltage Example 1 Metal layer/anti-reflection layer 0.0 sccm 5kW Example 2 Metal layer/anti-reflection layer 0.1 sccm 5kW Example 3 Metal layer/anti-reflection layer 0.2 sccm 5kW Example 4 Metal layer/anti-reflection layer 0.3 sccm 5kW Example 5 Metal layer/anti-reflection layer 0.4 sccm 5kW Example 6 Metal layer/anti-reflection layer 0.4 sccm 4kW Example 8 Metal layer/anti-reflection layer 0.4 sccm 6kW Example 9 Metal layer/anti-reflection layer 0.4 sccm 7kW Comparative Example 1 metal layer - - Comparative Example 2 Metal layer/anti-reflection layer 0.5 sccm 5kW Comparative Example 3 Metal layer/anti-reflection layer 0.4 sccm 8kW

division Thickness of anti-reflection layer (nm) reflectivity sheet resistance
(Ω/□) Metal oxide content (at%) Example 1 35 2.1% 0.148 31.4 Example 2 36 2.0% 0.148 32.0 Example 3 35 2.1% 0.149 32.3 Example 4 37 2.1% 0.142 33.6 Example 5 37 2.1% 0.188 38.7 Example 6 25 7.9% 0.164 45.4 Example 8 48 4.2% 0.137 42.5 Example 9 56 9.8% 0.136 52.7 Comparative Example 1 0 72.7% 0.01 - Comparative Example 2 20 26.4% 1.91 59.2 Comparative Example 3 65 15.5% 1.512 68.3

Referring to Table 2, when the oxygen partial pressure was 0.4 sccm or less, the reflectance range of the electrode stack was 10% or less. Accordingly, the optical properties of the electrode laminate were improved, the sheet resistance was reduced, and the conductivity was also improved at the same time.

100: electrode laminate 110: base material
120: metal layer 130: conductive upper anti-reflection layer
140: electrode pattern

Claims (11)

materials;
a metal layer disposed on the substrate; and
a conductive upper anti-reflection layer disposed on the metal layer, and a reflectance of 10% or less,
The conductive upper anti-reflection layer includes a copper-metal-oxygen composite, and the metal included in the copper-metal-oxygen composite is chromium (Cr), molybdenum (Mo), tungsten (W), magnesium (Mg), calcium ( Ca), including at least one selected from the group consisting of lanthanum (La), cesium (Ce) and indium (In), the electrode laminate.
The electrode laminate according to claim 1, wherein the reflectance is 2 to 10%.
The electrode laminate according to claim 1, wherein the copper-metal-oxygen complex comprises an alloy or mixture of a copper-oxygen compound and a metal-oxygen compound.
The electrode laminate according to claim 1, wherein a ratio of the elements included in the copper-metal-oxygen complex among the total elements included in the conductive upper anti-reflection layer is 50 to 80 atomic% (at%) or less.
The electrode laminate according to claim 1, wherein the conductive upper anti-reflection layer has a sheet resistance of 0.1 to 0.2 Ω/□.
The electrode laminate according to claim 1, wherein the conductive upper anti-reflection layer has a thickness of 10 to 60 nm.
The electrode laminate according to claim 1, further comprising a lower anti-reflection layer disposed between the substrate and the metal layer.
The electrode laminate according to claim 1, wherein the metal layer comprises copper or a copper alloy.
forming a metal layer on the substrate; and
Forming a conductive upper anti-reflection layer comprising a copper-metal-oxygen complex at an oxygen partial pressure of 0.4 sccm or less on the metal layer,
Metals included in the copper-metal-oxygen complex include chromium (Cr), molybdenum (Mo), tungsten (W), magnesium (Mg), calcium (Ca), lanthanum (La), cesium (Ce), and indium (In). ) A method of manufacturing an electrode laminate selected from the group consisting of.
The method of claim 9 , wherein the forming of the conductive upper anti-reflection layer comprises a sputtering process.
The method of claim 10 , wherein the forming of the conductive upper anti-reflection layer is performed by applying a DC power of 4 to 7 kW.

Images