KR20210033233A - Electroluminescent Display - Google Patents

Abstract

The present application relates to an electroluminescent display device. According to the present application, the electroluminescent display device comprises a substrate, a light blocking layer, a light guide layer, and an element layer. The substrate includes a plurality of pixels having a driving area and a light emitting area. The light blocking layer has an opening arranged in the pixels on the substrate. The light guide layer has a light output area, a light receiving area, and a light guide area, which are disposed over the light blocking layer. The element layer is disposed on the light guide layer and includes a driving element arranged in the driving area and a light emitting element arranged in the light emitting area. An opening corresponds to the light output area. The light receiving area corresponds to the light emitting area. The light guide area guides the light output from the light emitting element and incident to the light receiving area to the light output area, and emits the light to the outside of the substrate through the opening. According to the present invention, luminous efficiency is improved without a separate polarization layer or a circular polarization conversion layer.

Description

Electroluminescent Display {Electroluminescent Display}

This application relates to an electroluminescent display device. In particular, this application relates to an electroluminescent display device having a light guide structure in which external reflected light is removed and luminous efficiency is maximized.

Various types of image display devices such as CRT (Cathode Ray Tube), LCD (Liquid Crystal Display), PDP (Plasma Display Panel), and electroluminescent devices (Luminescent Display) have been developed and developed. As such, various types of display devices are used to display image data of various products such as computers, mobile phones, bank deposit and withdrawal devices (ATM), and vehicle navigation systems according to their respective characteristics.

Particularly, an electroluminescent display device, which is a self-luminous display device, has excellent optical performance such as a viewing angle and color realization, and thus its application field is gradually expanded, and is in the spotlight for an image display device. However, the self-luminous display device has a problem in that a display image due to self-emission is not properly recognized because external light is reflected from the surface of the display device. For example, when the area of the pixel electrode is increased to improve the luminous efficiency of the light emitting display device, the reflectance of external light is also increased, so that interference by the reflected light may increase.

To prevent this, conventionally, a method of solving external light reflection by attaching a separate optical film or polarizing film to the surface of a display panel has been proposed. Such an optical film or a polarizing film is expensive and causes an increase in the overall cost of the display device. Moreover, even if such an optical film is attached, it is still insufficient to fundamentally eliminate or minimize the reflectance of external light.

The purpose of this application is to overcome the problems of the prior art, and to provide an electroluminescent display device capable of minimizing external light reflectance while improving luminous efficiency without having a separate polarizing layer or circularly polarized light conversion layer. have. Another object of this application is to include a light-shielding layer covering all areas of the substrate except for the light-emitting area, and a light guide that guides light emitted from the light-emitting area to the light-emitting area, thereby improving luminous efficiency and external light reflectance. It is to provide an electroluminescent display device that can be minimized. Another object of this application is to provide an electroluminescent display device in which a light shielding layer and a light guide are formed together with the display elements of a display device, thereby lowering cost, increasing luminous efficiency, and preventing display quality degradation due to external light reflection. Have.

In order to achieve the above object, the electroluminescent display device according to this application includes a substrate, a light shielding layer, a light guide layer, and an element layer. The substrate includes a plurality of pixels having a driving region and a light emitting region. The light-shielding layer has openings arranged in pixels on the substrate. The light guide layer includes a light-exiting area, a light-incident area, and a light guide area, which are disposed over the light-shielding layer. The element layer is disposed on the light guide layer and includes a driving element disposed in the driving region and a light emitting element disposed in the light emitting region. The openings correspond to the light exit area. The light incident area corresponds to the light emission area. The light guide region guides light emitted from the light-emitting element and incident to the light-incident region to the light-emitting region, and discharges the light to the outside of the substrate through the opening.

For example, the area of the light exit area is smaller than the area of the light incident area.

For example, the light guide layer is made of a material that reflects light.

For example, it further includes a color filter disposed in the opening area on the substrate.

As an example, the element layer further includes a color filter disposed corresponding to the light incident area.

In one example, the light guide layer includes a first planarization layer, a light guide trench, a light reflection layer, and a second planarization layer. The first planarization layer is laminated on the light-shielding layer. The light guide trench is formed by removing a part of the second planarization layer. The light reflective layer is formed on the sidewall of the light guide trench, and is applied from the light-incident area to the light-exit area. The second planarization layer fills the light guide trench surrounded by the light reflective layer and covers the upper surface of the light reflective layer.

As an example, the driving element is disposed over the second planarization layer. The light-emitting element is disposed on a flat protective layer covering the driving element. A color filter disposed above the second planarization layer and below the light emitting element corresponding to the light-incident region is further included.

For example, it further includes a color filter formed between the light reflective layer on the substrate exposed to the light guide trench. A second planarization layer is deposited over the color filter.

For example, it further includes a color filter disposed in the opening on the substrate. The light guide layer includes a first planarization layer, an inorganic film, a light guide trench, a light reflection layer, and a planarization protective film. The first planarization layer is laminated on the light shielding layer and the color filter. The inorganic film covers the driving element formed on the first planarization layer, and is stacked on the first planarization layer. The light guide trench is formed by removing the inorganic film and the first planarization layer on the color filter. The light reflective layer is formed on the sidewall of the light guide trench, and is applied from the light-incident area to the light-exit area. The flat protective film fills the light guide trench surrounded by the light reflection layer, and covers the upper surface of the light reflection layer and the driving element.

As an example, the light-emitting element is disposed on a flat protective film.

In one example, the light emitting device may include a first electrode connected to the driving device; A bank defining a light emitting area in the first electrode; An emission layer stacked on the bank and the first electrode exposed to the emission region; And a second electrode stacked on the emission layer.

As an example, the pixel includes a plurality of sub-pixels having a single color different from each other. The openings are disposed across a plurality of sub-pixels in common.

For example, the openings have different sizes in each of the sub-pixels.

As an example, the pixel includes a plurality of sub-pixels having a single color different from each other. The openings are arranged one by one for each sub-pixel.

For example, the openings have different sizes, different shapes, or different numbers for each sub-pixel.

As an example, the light guide region has an inverted triangular structure in which the vertical cross-sectional shape linearly narrows from the light incident region to the light exit region.

For example, the light guide region has a funnel structure in which the vertical cross-sectional shape becomes narrower non-linearly from the light incident region to the light exit region.

For example, the light guide region has a funnel structure in which both side walls are convex.

For example, the light guide region has a funnel structure in which both side walls are concave.

The electroluminescent display according to this application can improve luminous efficiency and minimize external light reflectance without having a separate polarization layer or circular polarization conversion layer. The display device according to this application includes a light-shielding layer covering the remaining areas of the substrate excluding the emission area, and a light guide that guides light emitted from the emission area to the emission area, thereby improving luminous efficiency and minimizing external light reflectance. can do. In addition, since the display device according to this application includes a light blocking layer and a light guide inside the display device, the cost is low, luminous efficiency is high, and reflection of external light is minimized to ensure display quality.

In addition to the effects of this application mentioned above, other features and advantages of this application will be described below, or will be clearly understood by those of ordinary skill in the art from such description and description.

1 is a diagram illustrating a schematic structure of an electroluminescent display device according to an example of this application.
2 is a diagram illustrating a circuit configuration of one pixel constituting an electroluminescent display device according to an example of this application.
3 is a plan view illustrating a structure of pixels according to an example of this application.
4 is a cross-sectional view of an electroluminescent display device according to the first embodiment of this application, taken along line II′ of FIG. 3.
5 is a diagram illustrating a path through which light is emitted and a path through which external light is reflected or absorbed in the display device of FIG. 4.
6 is a cross-sectional view of an electroluminescent display device according to a second embodiment of this application, taken along line II′ of FIG. 3.
7 is a cross-sectional view of an electroluminescent display device according to a third embodiment of this application, taken along line II′ of FIG. 3.
8 is a cross-sectional view of an electroluminescent display device according to a fourth exemplary embodiment of this application, taken along line II′ of FIG. 3.
9 is a cross-sectional view of an electroluminescent display device according to a fifth exemplary embodiment of this application, taken along line II′ of FIG. 3.
10 is a plan view illustrating an example of an arrangement structure of a light guide in the electroluminescent display device according to this application.
11 is a plan view illustrating another example of an arrangement structure of a light guide in the electroluminescent display device according to this application.
12A to 12C are plan views illustrating various examples in which sub-pixels and a light guide are disposed in the electroluminescent display device according to this application.

Advantages and features of this application, and a method of achieving them will become apparent with reference to examples described below in detail together with the accompanying drawings. However, this application is not limited to the examples disclosed below, but will be implemented in a variety of different forms. It is provided to completely inform the scope of the invention to those skilled in the art, and the invention of this application is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining an example of this application are exemplary, and are not limited to the matters shown here. The same reference numerals refer to the same elements throughout the specification. In addition, in describing an example of this application, when it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the application, the detailed description thereof will be omitted.

When'include','have','consists of' and the like mentioned in the specification of this application are used, other parts may be added unless'only' is used. In the case of expressing the constituent elements in the singular, it includes the case of including the plural unless specifically stated otherwise.

In interpreting the constituent elements, it is interpreted as including an error range even if there is no explicit description.

In the case of a description of the positional relationship, for example, if the positional relationship of the two parts is described as'upper','upper of','lower of','next to', etc.,'right' Alternatively, one or more other parts may be located between the two parts unless'direct' is used.

In the case of a description of a temporal relationship, for example, when a temporal predecessor relationship is described as'after','following','after','before', etc.,'right' or'direct' It may also include cases that are not continuous unless this is used.

First, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, the first constituent element mentioned below may be a second constituent element within the technical idea of this application.

The term “at least one” is to be understood as including all possible combinations from one or more related items. For example, the meaning of “at least one of the first item, the second item, and the third item” means that each of the first item, the second item, or the third item, as well as the first item, the second item, and the third item, It may mean a combination of all items that can be presented from more than one.

Each of the features of the various examples of this application can be partially or completely combined or combined with each other, technically various interlocking and driving are possible, and each of the examples can be implemented independently of each other or can be implemented together in an association relationship. .

Hereinafter, various structures of the display device according to this application will be described in detail with reference to the accompanying drawings. In adding reference numerals to elements of each drawing, the same elements may have the same numerals as possible even if they are indicated on different drawings.

1 is a diagram showing a schematic structure of an electroluminescent display device according to this application. In FIG. 1, the X axis represents a direction parallel to the scan wiring, the Y axis represents a direction parallel to the data wiring, and the Z axis represents the height direction of the display device.

Referring to FIG. 1, the electroluminescent display device according to this application includes a substrate 110, a gate (or scan) driver 200, a data pad part 300, a source driving integrated circuit 410, and a flexible film 430. , A circuit board 450, and a timing controller 500.

The substrate 110 may include an insulating material or a material having flexibility. The substrate 110 may be made of glass, metal, or plastic, but is not limited thereto. When the electroluminescent display device is a flexible display device, the substrate 110 may be made of a flexible material such as plastic. For example, it may include a transparent polyimide material.

The substrate 110 may be divided into a display area DA and a non-display area NDA. The display area DA is an area in which an image is displayed, and may be defined in most areas including the central portion of the substrate 110, but is not limited thereto. Scan lines (or gate lines), data lines, and pixels are formed in the display area DA. The pixels include a plurality of sub-pixels, and each of the plurality of sub-pixels includes scan lines and data lines.

The non-display area NDA is an area in which an image is not displayed, and may be defined at an edge portion of the substrate 110 so as to surround all or part of the display area DA. A gate driving part 200 and a data pad part 300 may be formed in the non-display area NDA.

The gate driver 200 supplies scan (or gate) signals to scan lines according to a gate control signal input from the timing controller 500. The gate driver 200 may be formed in a non-display area NDA outside one side of the display area DA of the base substrate 110 in a GIP (gate driver in panel) method. The GIP method refers to a structure in which the gate driver 200 is directly formed on the substrate 110.

The data pad unit 300 supplies data signals to data lines according to a data control signal input from the timing controller 500. The data pad unit 300 is manufactured as a driving chip and mounted on the flexible film 430, and is mounted on the non-display area NDA outside one side of the display area DA of the substrate 110 in a TAB (tape automated bonding) method. Can be attached.

The source driving integrated circuit 410 receives digital video data and a source control signal from the timing controller 500. The source driving integrated circuit 410 converts digital video data into analog data voltages according to a source control signal and supplies them to data lines. When the source driving integrated circuit 410 is manufactured as a chip, it may be mounted on the flexible film 430 in a chip on film (COF) or chip on plastic (COP) method.

Wires connecting the data pad part 300 and the source driving integrated circuit 410 and wires connecting the data pad part 300 and the circuit board 450 may be formed on the flexible film 430. The flexible film 430 is attached on the data pad unit 300 using an anisotropic conducting film, whereby the data pad unit 300 and the wires of the flexible film 430 may be connected.

The circuit board 450 may be attached to the flexible films 430. The circuit board 450 may mount a plurality of circuits implemented with driving chips. For example, the timing controller 500 may be mounted on the circuit board 450. The circuit board 450 may be a printed circuit board or a flexible printed circuit board.

The timing controller 500 receives digital video data and a timing signal from an external system board through a cable of the circuit board 450. The timing controller 500 generates a gate control signal for controlling the operation timing of the gate driver 200 and a source control signal for controlling the source driving integrated circuits 410 based on the timing signal. The timing controller 500 supplies a gate control signal to the gate driver 200 and supplies a source control signal to the source driving integrated circuits 410. Depending on the product, the timing controller 500 may be formed of the source driving integrated circuit 410 and one driving chip and mounted on the substrate 110.

2 is a diagram showing a circuit configuration of one pixel constituting the electroluminescent display device according to this application. 3 is a plan view showing a structure of pixels according to this application. In FIGS. 2 to 3, an organic light emitting display device, which is a type of electroluminescent display device, will be described as an example.

2 to 3, one pixel of the organic light emitting display device is defined by a scan line SL, a data line DL, and a driving current line VDD. Also, one pixel may include a circuit area CA and a light emitting area EA. The circuit area CA of one pixel of the organic light emitting display device includes a switching thin film transistor ST, a driving thin film transistor DT, an organic light emitting diode OLE, an auxiliary capacitor Cst, and various wires. In addition, a light-emitting area OA overlapping with the light-emitting area EA is further provided. The light exit area OA will be described in detail in embodiments using a cross-sectional view.

For example, the switching thin film transistor ST may be disposed at a portion where the scan line SL and the data line DL cross each other. The switching thin film transistor ST includes a switching gate electrode SG, a switching source electrode SS, and a switching drain electrode SD. The switching gate electrode SG is connected to the scan line SL. The switching source electrode SS is connected to the data line DL, and the switching drain electrode SD is connected to the driving thin film transistor DT. The switching thin film transistor ST serves to select a pixel to be driven by applying a data signal to the driving thin film transistor DT.

The driving thin film transistor DT serves to drive the organic light emitting diode OLE of a pixel selected by the switching thin film transistor ST. The driving thin film transistor DT includes a driving gate electrode DG, a driving source electrode DS, and a driving drain electrode DD. The driving gate electrode DG is connected to the switching drain electrode SD of the switching thin film transistor ST. The driving source electrode DS is connected to the driving current line VDD, and the driving drain electrode DD is connected to the anode electrode ANO of the organic light emitting diode OLE. An auxiliary capacitor Cst is disposed between the driving gate electrode DG of the driving thin film transistor DT and the anode electrode ANO of the organic light emitting diode OLE.

The driving thin film transistor DT is disposed between the driving current line VDD and the organic light emitting diode OLE. The high potential voltage for driving the organic light emitting diode OLE is applied to the driving current line VDD. The driving thin film transistor DT adjusts the amount of current flowing from the driving current line VDD to the organic light emitting diode OLE according to the magnitude of the voltage of the gate electrode connected to the drain electrode of the switching thin film transistor ST.

The organic light emitting diode OLE includes an anode electrode ANO, an organic emission layer EL, and a cathode electrode CAT. The organic light emitting diode OLE emits light according to a current controlled by the driving thin film transistor DT. In other words, since the amount of light emitted by the organic light emitting diode OLE is adjusted according to the current controlled by the driving thin film transistor DT, the luminance of the electroluminescent display device can be adjusted. The anode electrode (ANO) of the organic light emitting diode (OLE) is connected to the driving drain electrode (DD) of the driving thin film transistor (DT), and the cathode electrode (CAT) is connected to the low power wiring (VSS) supplied with a low potential voltage. do. That is, the organic light emitting diode OLE is driven by a low potential voltage and a high potential voltage controlled by the driving thin film transistor DT.

Hereinafter, various embodiments of the electroluminescent display device according to this application will be described with reference to various cross-sectional views showing the cross-sectional structure of the electroluminescent display device according to this application.

<First embodiment>

With further reference to Fig. 4, the first embodiment of this application will be described. 4 is a cross-sectional view of an electroluminescent display device according to the first embodiment of this application, taken along line II′ of FIG. 3.

Referring to FIG. 4, the display device according to the first embodiment of this application may be most suitably applied when implemented in a bottom emission method. However, it is not necessarily limited thereto, and may be implemented in a top emission method. The display device according to the first embodiment includes a substrate SUB, a light blocking layer BM, a light guide layer 100, a device layer 200, and an encap layer ENC.

The substrate SUB includes a display area DA and a non-display area NDA surrounding the display area DA. The display area DA of the substrate SUB may include a circuit area CA and a light emitting area EA. The circuit area CA of the substrate SUB may include a driving circuit for driving the light emitting element OLE, and the driving circuit may include at least one thin film transistor. For example, the driving circuit may include a driving transistor DT and at least one switching transistor ST.

The light emitting area EA of the substrate SUB may include a light emitting element OLE that generates light by a driving circuit. According to an example, the emission area EA may correspond to an opening area formed in each of the plurality of pixels defined by the bank BA.

The light blocking layer BM may be first stacked on the upper surface of the substrate SUB. It is preferable that the light-shielding layer BM includes a light-shielding material capable of absorbing most of the light incident on the lower surface of the substrate SUB, or a material having high light absorption. The light blocking layer BM may have an opening OP corresponding to at least one light exit area OA. It is preferable that the light blocking layer BM covers all areas of the substrate SUB except for the light emission area OA.

Specifically, the light-emitting area EA corresponds to the entire area in which the light-emitting element OLE generates light, and the light-emitting area OA corresponds to a limited area through which light emitted from the light-emitting element OLE is emitted to the outside. . The light blocking layer BM may have the opening OP, thereby forming at least one light emitting area OA overlapping the light emitting area EA. The light blocking layer BM may cover the emission area EA based on the emission direction so as not to overlap with the emission area OA.

According to an example, the light blocking layer BM may include a light blocking material or a light absorbing material, and covers all portions except for the light exit area OA, thereby preventing reflection of external light. Meanwhile, light emitted from the light emitting device OLE may be guided to the light exit area OA through the light guide layer 100. The light blocking layer BM may improve reflection visibility by reducing the reflectance of external light of the display device. In addition, the light blocking layer BM prevents the light emitted from each of the plurality of light emitting devices OLE from being mixed with each other, thereby improving light leakage and reduced visibility.

A light guide layer 100 is formed on the light blocking layer BM. The light guide layer 100 is a structure that guides light emitted from the light emitting area EA to the light emitting area OA. The light guide layer 100 may reduce power consumption and improve brightness by minimizing light loss. The light guide layer 100 includes a light exit area OA, a light incident area 110 and a light guide area 120.

The reflectance of external light of the display device may be determined according to a ratio of the area of the emission area OA to the emission area EA. That is, as the area of the light exit area OA is decreased, the light reflectance from the outside may be lowered. If the light emission area OA is too small, the luminous efficiency may be too low. Therefore, it is preferable to adjust an appropriate area ratio of the light emission area OA so as to maximize the luminous efficiency while minimizing external light reflectance.

The light exit area OA corresponds to the opening OP formed in the light blocking layer BM. The light-incident area 110 corresponds to the light-emitting area EA that emits light from the light-emitting element OLE. The light guide area 120 is a passage portion that guides the light emitted from the light emitting element OLE from the light-incident area 110 to the light-exit area OA without loss. The light guide region 120 preferably has a shape in which a reflective material that induces light is continuously disposed from the light emitting area EA to the light emitting area OA.

Specifically, the light guide layer 100 may include a first planarization layer 160a, a reflective layer 170, and a second planarization layer 160b. The first planarization layer 160a is stacked on the entire surface of the substrate SUB in which the light blocking layer BM and the opening OP are disposed. In particular, the first planarization layer 160a has a shape in which a portion in which the reflective layer 170 for inducing light is formed is removed. The portion removed from the first planarization layer 160a corresponds to a space in which the reflective layer 170 is to be inserted.

For example, the first planarization layer 160a includes a light incident area 110, a light exit area OA, and a light guide area 120. The light exit area OA may have an area smaller than that of the light incident area 110. By forming the light exit area OA to be small, the area of the light blocking layer BM that prevents external light from being reflected on the entire lower surface of the substrate SUB is secured to the maximum, and light is transmitted through the minimum opening OP. You can achieve a structure that emits.

In the light guide area 120, a reflective layer 170 is disposed so as to prevent loss as much as possible while the light emitted from the light emitting element OLE is guided from the light incident area 110 to the light emission area OA. Light whose loss is minimized by the reflective layer 170 is guided to the emission area OA, and light is emitted through the minimum opening area.

After removing the first planarization layer 160a, after forming the reflective layer 170, the light guide region 120 is filled with the second planarization layer 160b. In this case, the second planarization layer 160b is preferably formed of the same material as the first planarization layer 160a. In addition, the light incident region 110 of the reflective layer 170 is formed on the upper surface of the first planarization layer 160a. Accordingly, it is preferable that the second planarization layer 160b is stacked slightly higher than the height of the light-incident region 110 to make the upper surface flat.

Although not shown in the drawings, a buffer layer may be further stacked on the second planarization layer 160b. According to an example, the buffer layer may be formed by stacking a plurality of inorganic layers. For example, the buffer layer may be formed of a multilayer in which one or more inorganic materials of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON) are stacked. Such a buffer layer may be formed on the entire upper surface of the substrate SUB in order to block moisture penetrating the light emitting device E through the substrate SUB. Further, although not shown in the drawings, the buffer layer may be further interposed between the light blocking layer BM and the substrate SUB.

The device layer 200 may be stacked on the upper surface of the second planarization layer 160b. The device layer 200 may include a driving device layer 210 and a light emitting device layer 220. A driving thin film transistor DT and a switching thin film transistor ST as described in FIGS. 2 and 3 may be formed on the driving element layer 210. A light-emitting element OLE may be formed on the light-emitting element layer 220.

The switching thin film transistor ST and the driving thin film transistor DT may be disposed on the second planarization layer 160b in the circuit area CA. According to an example, the switching thin film transistor ST may include a switching semiconductor layer SA, a switching gate electrode SG, a switching drain electrode SD, and a switching source electrode SS. In addition, the driving thin film transistor DT may include a driving semiconductor layer DA, a driving gate electrode DG, a driving drain electrode DD, and a driving source electrode DS.

The switching gate electrode SG and the driving gate electrode DG may be provided in the circuit area CA of the substrate SUB. The gate electrodes SA and DA are disposed on the second planarization layer 160b. A gate insulating layer GI may be stacked on the gate electrodes SA and DA to cover the entire substrate SUB. The switching semiconductor layer SA and the driving semiconductor layer DA may be disposed on the gate insulating layer GI to overlap the switching gate electrode SG and the driving gate electrode DG, respectively. The gate insulating layer GI may insulate the semiconductor layers SA and DA from the gate electrodes SG and DG. The gate insulating layer GI may be formed of an inorganic insulating material, for example, a single thin film including silicon oxide (SiO2), silicon nitride (SiNx), and silicon oxynitride (SiON), or multiple thin films thereof. Not limited.

The semiconductor layers SA and DA may directly contact the source electrodes SS and DS and the drain electrodes SD and DD, and may face each other with the gate electrodes SG and DG and the gate insulating layer GI interposed therebetween.

The drain electrodes SD and DD and the source electrodes SS and DS may be provided to be spaced apart from each other on the gate insulating layer GI and the semiconductor layers SA and DA. The drain electrodes SD and DD may contact one end of the semiconductor layers SA and DA, and the source electrodes SS and DS may contact the other ends of the semiconductor layers SA and DA.

A flat protective layer PL is stacked on the entire surface of the substrate SUB on which the drain electrodes SD and DD and the source electrodes SS and DS are formed. The flat protective layer PL may function to protect the source electrodes SS and DS, the drain electrodes SD and DD, and the semiconductor layers SA and DA. The flat protective layer PL may include a contact hole through which the anode electrode ANO passes. Although not shown in the drawing, a protective film made of an inorganic material is further stacked under the flat protective layer PL to protect the source electrodes (SS, DS), drain electrodes (SD, DD), and the semiconductor layers (SA, DA). May be.

In addition, the device layer 200 may further include a color filter CF. Specifically, after forming the source-drain electrodes SS, SD, DS, and DD on the gate insulating layer GI, the color filter CF may be formed. The color filter CF may be disposed corresponding to the light emitting area EA of the light emitting element OLE. That is, it is preferable that the light-emitting element OLE and the color filter CF have a size and shape corresponding to the light-emitting area EA and the light-incident area 110.

A flat protective layer PL is stacked on the thin film transistors ST and DT and the color filter CF to cover the entire substrate SUB. An anode electrode ANO is formed on the flat protective layer PL. The anode electrode ANO is connected to the drain electrode DD of the driving thin film transistor DT through a contact hole formed in the flat protective layer PL. It is preferable that the anode electrode ANO has a size larger than that of the color filter CF and is formed to completely cover the color filter CF.

A bank BA is formed on the anode electrode ANO. The bank BA opens the central portion of the anode electrode ANO, and defines the light emitting area EA by covering the edge area. It is preferable to set the area of the anode electrode ANO exposed by the bank BA to be limited within the area of the color filter CF. In addition, it is preferable that the light emitting area EA is aligned to match the light incident area 110 of the color filter CF and the light guide layer 100.

The bank BA may be disposed on the flat protective layer PL in the circuit area CA. According to an example, the bank BA is disposed between the emission areas EA of each of the plurality of pixels, so that the emission area EA of each of the plurality of pixels may be defined. For example, the bank BA may cover a part of the anode electrode ANO, and the other part of the anode electrode ANO, which is not covered by the bank BA, covers the light emitting area EA of each of the plurality of pixels. Can be exposed through.

A light emitting layer EL is stacked on the bank BA and the anode electrode ANO. The emission layer EL may be formed to be common to all pixels without being divided for each pixel area. For example, the emission layer EL may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. According to an example, the emission layer EL may further include at least one functional layer for improving luminous efficiency and lifetime of the organic emission layer.

The cathode electrode CAT may be provided on the emission layer EL. The cathode electrode CAT may be implemented in the form of a sheet electrode common to all pixels without being classified for each pixel area. According to an example, the cathode electrode CAT may be made of a transparent conductive oxide (TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO). In addition, in the lower emission type, the cathode electrode CAT may further include a reflective material to emit light generated from the light emitting device OLE in the front of the display panel, that is, in the lower direction of the substrate SUB.

An encap layer ENC may be stacked on the device layer 200, in particular, on the light emitting device layer 220. The encap layer ENC is a structure for preventing moisture or air from penetrating into the light emitting device OLE. For example, the encap layer ENC may have a structure in which a first inorganic layer, an organic layer, and a second inorganic layer are sequentially stacked. The first inorganic layer and the second inorganic layer may also be formed of a single layer, or may have a structure in which several inorganic layers are stacked.

In the display device according to the first exemplary embodiment above, after the light blocking layer BM is first formed on the substrate SUB, the driving elements and the light emitting elements are formed. Therefore, it is preferable that the material of the light-shielding layer BM contains a material having excellent heat resistance in order not to be damaged in the subsequent manufacturing process of the driving device. For example, it may be an organic material including a heat-resistant black pigment, an alkali-soluble resin binder, a polymerizable compound having an ethylenically unsaturated bond, a photoinitiator or a photoinitiator, and a negative photosensitive resin composition containing a solvent. Here, the heat-resistant black pigment includes graphite, iron oxide, cobalt black, manganese black, titanium black, or glass or ceramic colored in black, and these pigments may be used alone or in combination.

In the first embodiment, the color filter CF is formed after the driving element is formed. Accordingly, the process after lamination of the color filter CF is a process of forming an organic light emitting device and corresponds to a low-temperature process. Accordingly, the color filter CF may use a resin material including a general dye.

Hereinafter, in the display device according to this application, a path through which light is emitted and a path through which external light is reflected or absorbed will be described in detail with reference to FIG. 5. 5A is a diagram illustrating a path through which light generated from a light emitting device is emitted, and FIG. 5B is a diagram illustrating a path through which external light is absorbed by a light blocking layer or reflected by a light emitting device.

In FIG. 5A, the first and second lights L1 and L2 generated from the light emitting device OLE are incident on the light-incident region 110 of the light guide layer 100 and are reflective layers disposed in the light guide region 120. It may be reflected by 170 and the cathode electrode CAT to be guided to the light exit area OA.

For example, the first light L1 may be generated from the light emitting device OLE and may be incident on the light incident region 110 of the light guide layer 100. The first light L1 incident on the light-incident region 110 may be reflected by one side of the reflective layer 170 to proceed to the light emitting device OLE. In addition, the first light L1 may be reflected by the cathode electrode CAT of the light emitting element OLE and may travel to the other side of the reflective layer 170. In addition, the first light L1 may be reflected by the other side of the reflective layer 170 and may be guided to the light exit area OA of the light guide layer 100.

Meanwhile, the second light L2 may be generated from the light emitting device OLE and may be incident on the light incident area portion 110 of the light guide layer 100. The second light L2 incident on the light incident region 110 may be reflected by the other side of the reflective layer 170 and may proceed to one side of the reflective layer 170. In addition, the second light L2 may be reflected by one side of the reflective layer 170 and may be guided to the light exit area OA of the light guide layer 100.

In this way, the light guide layer 100 may concentrate light incident through the light-incident area 110 to the light-exit area OA. Therefore, the display device maintains the amount of light emitted to the light-emitting area OA at a level substantially equal to the amount of light generated in the light-emitting area EA, even if the area ratio of the light-emitting area OA to the light-emitting area EA is remarkably small. Can focus light. That is, the display device may minimize the loss of light incident through the light-incident area unit 110 and guide it to the light-exit area OA. As a result, since the display device according to this application includes the light guide layer 100, it is possible to prevent a decrease in luminous efficiency.

Referring to FIG. 5B, light incident from the outside may be absorbed by the light blocking layer BM or reflected by the light emitting element OLE.

For example, the third light L3 may be incident from the outside to reach the light blocking layer BM. In this case, the third light L3 is absorbed by the light blocking layer BM, and thus may not be reflected to the outside.

Meanwhile, the fourth light L4 may be incident from the outside and may pass through the opening OP of the light blocking layer MB. The fourth light L4 passing through the opening OP may pass through the color sensor CF to reach the light emitting element OLE. The fourth light L4 may be reflected by the cathode electrode CAT of the light emitting element OLE, pass through the color filter CF again, and may be emitted through the opening OP. In this case, the fourth light L4 that is finally emitted passes through the color filter CF twice, so that the amount of light may be reduced.

In this way, the light blocking layer BM may cover the light emitting area EA excluding the light emitting area OA. Therefore, the light-blocking layer BM can minimize the exposed area of the light-emitting element OLE in the light-emitting direction, and light incident from the outside is reflected by the light-emitting element OA in an area other than the light-emitting area OA. Can be minimized or prevented. As a result, the display device according to this application can reduce the external light reflectance and improve reflection visibility by reducing the area ratio of the emission area OA to the emission area EA.

<Second Example>

Hereinafter, a second embodiment of this application will be described with reference to FIG. 6. 6 is a cross-sectional view of a display device according to a second exemplary embodiment of this application, taken along line II′ of FIG. 3. Referring to FIG. 6, the display device according to the second exemplary embodiment includes a light blocking layer BM, a color filter CF, a light guide layer 100, an element layer 200, and an encap layer ENC. The display device according to the second exemplary embodiment has substantially the same structure as the display device according to the first exemplary embodiment illustrated in FIG. 4. If there is a difference, it is in the position of the color filter CF.

Specifically, in the first embodiment, the color filter CF is formed after the switching thin film transistor ST and the driving thin film transistor DT as driving elements are formed. On the other hand, in the second embodiment, after forming the light blocking layer BM, the color filter CF is formed to fill the opening OP.

The light blocking layer BM may be first stacked on the upper surface of the substrate SUB. It is preferable that the light-shielding layer BM includes a light-shielding material capable of absorbing most of the light incident on the lower surface of the substrate SUB, or a material having high light absorption. The light blocking layer BM may have an opening OP corresponding to at least one light exit area OA. It is preferable that the light blocking layer BM covers all areas of the substrate SUB except for the light emission area OA.

After forming the light blocking layer BM having the opening OP, a color filter CF is formed in the opening OP. The color filter CF may include any one of a red color filter, a green color filter, and a blue color filter. In some cases, any one of red, green, blue, and white color filters may be included.

The light guide layer 100 is formed on the substrate SUB on which the light blocking layer BM and the color filter CF are formed. The light guide layer 100 is a structure that guides light emitted from the light emitting area EA to the light emitting area OA. The light guide layer 100 includes a light exit area OA, a light incident area 110 and a light guide area 120.

Specifically, the light guide layer 100 includes a first planarization layer 160a, a reflective layer 170, and a second planarization layer 160b. The first planarization layer 160a is stacked on the entire surface of the substrate SUB in which the light blocking layer BM and the opening OP are disposed. In particular, the first planarization layer 160a has a shape in which a portion in which the reflective layer 170 for inducing light is formed is removed. The portion removed from the first planarization layer 160a corresponds to a space in which the reflective layer 170 is to be inserted.

For example, the first planarization layer 160a includes a light incident area 110, a light exit area OA, and a light guide area 120. The light exit area OA may have an area smaller than that of the light incident area 110. By forming the light exit area OA to be small, the area of the light blocking layer BM that prevents external light from being reflected on the entire lower surface of the substrate SUB is secured to the maximum, and light is transmitted through the minimum opening OP. You can achieve a structure that emits.

After removing the first planarization layer 160a, after forming the reflective layer 170, the light guide region 120 is filled with the second planarization layer 160b. In this case, the second planarization layer 160b is preferably formed of the same material as the first planarization layer 160a. In addition, the light incident region 110 of the reflective layer 170 is formed on the upper surface of the first planarization layer 160a. Accordingly, it is preferable that the second planarization layer 160b is stacked slightly higher than the height of the light-incident region 110 to make the upper surface flat.

The device layer 200 may be stacked on the upper surface of the second planarization layer 160b. The device layer 200 may include a driving device layer 210 and a light emitting device layer 220. A driving thin film transistor DT and a switching thin film transistor ST as described in FIGS. 2 and 3 may be formed on the driving element layer 210. A light-emitting element OLE may be formed on the light-emitting element layer 220.

The structure of the device layer 200 is substantially the same as that of the first embodiment except for the color filter CF, and therefore, a redundant description will be omitted. An encap layer ENC may be stacked on the device layer 200. Since the encap layer ENC is also the same as in the first embodiment, a redundant description is omitted.

In the display device according to the second exemplary embodiment above, after first forming the light blocking layer BM and the color filter CF on the substrate SUB, the driving element and the light emitting element are formed. Therefore, it is preferable that the materials of the light shielding layer BM and the color filter CF include a material having excellent heat resistance in order not to be damaged in the subsequent manufacturing process of the driving element.

Therefore, if the light blocking layer BM is excellent in heat resistance, it is preferable to form a material having excellent light absorption. For example, it may be an organic material including a heat-resistant black pigment, an alkali-soluble resin binder, a polymerizable compound having an ethylenically unsaturated bond, a photoinitiator or a photoinitiator, and a negative photosensitive resin composition containing a solvent. Here, the heat-resistant black pigment includes graphite, iron oxide, cobalt black, manganese black, titanium black, or glass or ceramic colored in black, and these pigments may be used alone or in combination.

In addition, it is preferable to use a material that has excellent heat resistance and does not change color even at high temperatures. For example, among anthraquinone dyes, anilino azo dyes, triphenylmethane dyes, pyrazole azo dyes, pyridone azo dyes, atrapyridone dyes, oxonol dyes, benzylidene dyes, and xanthene dyes It may contain selected organic dyes. As another example, it may include a polyester-based resin formed through a condensation reaction.

<Third Example>

Hereinafter, a third embodiment of this application will be described with reference to FIG. 7. 7 is a cross-sectional view of an electroluminescent display device according to a third embodiment of this application, taken along line II′ of FIG. 3. Referring to FIG. 7, the display device according to the third embodiment includes a light blocking layer BM, a color filter CF, a light guide layer 100, an element layer 200, and an encap layer ENC.

The display device according to the third embodiment is very similar in structure to the display device according to the second embodiment shown in FIG. 6. If there is a difference, the third embodiment has a structure in which the light guide layer 100 and the device layer 200 cross each other. For example, the light guide layer 100 is characterized in that the light guide region 120 is formed over the planarization layer 160 and the gate insulating layer GI that is a part of the device layer 200.

Specifically, the light blocking layer BM may be firstly stacked on the upper surface of the substrate SUB. The light blocking layer BM may have an opening OP corresponding to at least one light exit area OA. It is preferable that the light blocking layer BM covers all areas of the substrate SUB except for the light emission area OA.

A planarization layer 160 is applied on the substrate SUB on which the light blocking layer BM having the opening OP is formed. A device layer 200 is stacked on the planarization layer 160. In particular, the driving element layer 210 is first formed on the planarization layer 160. For example, a switching thin film transistor ST and a driving thin film transistor DT are formed. Before applying the flat passivation layer PL on the substrate SUB on which the thin film transistors ST and DT are formed, the light guide layer 100 is formed.

For example, the gate insulating layer GI and the planarization layer 160 are patterned at the same time to form a light incident region 110, a light guide region 120, and a light exit region OA. The light incident area 110 has an area and shape corresponding to the light emitting element OLE to be formed later. It is preferable that the light exit area OA has an area smaller than that of the light incident area 110. The light guide area 120 is a part that connects the light-incident area 110 and the light-exit area OA.

After patterning the gate insulating layer GI and the planarization layer 160, a color filter CF is formed on the substrate SUB in the exposed light exit area OA. On the color filter CF, a reflective layer 170 is disposed in the light guide region 120.

After forming the reflective layer 170, the flat protective film PL is applied to the entire surface of the substrate SUB. As a result, the inside of the light guide region 120 surrounded by the reflective layer 170 is filled with the flat passivation layer PL. In addition, it is preferable that the flat passivation layer PL has a sufficient height to cover all of the thin film transistors ST and DT. The flat passivation layer PL fills the light guide region 120 and makes the surface of the substrate SUB on which the thin film transistors ST and DT are formed flat.

Although not shown in the drawings, an inorganic protective film may be further stacked on the flat protective film PL. A light emitting element OLE is formed on the flat passivation layer PL. Specifically, the anode electrode ANO is formed on the flat passivation layer PL. The anode electrode ANO is connected to the drain electrode DD of the driving thin film transistor DT through a contact hole penetrating the flat passivation layer PL.

A bank BA is formed on the anode electrode ANO. The bank BA mostly exposes the central area of the anode ANO and covers the edge area. The emission layer EL is stacked on the bank BA and the exposed anode electrode ANO. A cathode electrode CAT is stacked on the emission layer EL. As a result, the light emitting element OLE in which the anode electrode ANO, the light emitting layer EL, and the cathode electrode CAT are stacked is formed in the opening region defined by the bank BA.

An encap layer ENC may be stacked on the light emitting device layer 220. The encap layer ENC is a structure for preventing moisture or air from penetrating into the light emitting device OLE. For example, the encap layer ENC may have a structure in which a first inorganic layer, an organic layer, and a second inorganic layer are sequentially stacked. The first inorganic layer and the second inorganic layer may also be formed of a single layer, or may have a structure in which several inorganic layers are stacked.

<Fourth embodiment>

Hereinafter, an electroluminescent display device according to a fourth embodiment of this application will be described with reference to FIG. 8. FIG. 8 is a cross-sectional view of an electroluminescent display device according to a fourth exemplary embodiment of this application, taken along line II′ of FIG. 3.

Referring to FIG. 8, a vertical cross section of the reflective layer 170 may have a convex curved shape toward the light incident area 110. For example, the reflective layer 170 may have a funnel shape in which the diameter of the reflective layer 170 rapidly decreases downward from the light incident area 110. In other words, the reflective layer 170 may have a funnel shape whose diameter sharply decreases from the light incident area 110. Light incident on the light-incident area 110 of the light guide layer 100 may be reflected by the reflective layer 170 and the cathode electrode CAT to be guided to the light-exiting area OA.

In this way, when the reflective layer 170 has a funnel shape whose diameter rapidly decreases from the light incident area 110 downward, the light path is shorter than when the vertical section of the reflective layer 170 has an inclined plane shape. Then, the number of reflections by the reflective layer 170 and the cathode electrode CAT is reduced, so that the luminous efficiency of the display device may be improved. For example, since the reflectance of light by the reflective layer 170 and the cathode electrode CAT is less than 100%, the display device according to this application can improve the luminous efficiency of the display device by reducing the number of reflections.

<Fifth embodiment>

Hereinafter, an electroluminescent display device according to a fifth embodiment of this application will be described with reference to FIG. 9. 9 is a cross-sectional view of an electroluminescent display device according to a fifth embodiment of this application, taken along line II′ of FIG. 3.

Referring to FIG. 9, a vertical cross section of the light guide layer 100 may have a concave curved shape toward the light exit area portion OA. For example, the light guide region 120 may have a funnel shape in which a diameter gradually narrows downward from the light incident region 110. In other words, the light guide region 120 may have a shape of a hem (a bowl with an inlet facing upward) that gradually narrows in diameter in the light incident region 110 and sharply narrows in diameter as it approaches the light exit region OA. have.

Light incident on the light-incident area 110 of the light guide layer 100 may be reflected by the reflective layer 170 and the cathode electrode CAT to be guided to the light-exiting area OA. That is, the reflective layer 170 may concentrate light so that the amount of light emitted through the light exit area OA is maintained at a substantially the same level as the amount of light incident through the light incident area 110. In other words, the light guide region 120 may minimize the amount of light lost in the process of reflecting the light incident through the light incident region 110. As a result, the light guide layer 100 can prevent a decrease in luminous efficiency even if the area ratio of the light-emitting area OA to the light-emitting area EA is remarkably small.

<Sixth Example>

Until now, the structure of the display device according to this application has been described centering on the cross-sectional view. Hereinafter, various embodiments according to this application will be further described with reference to a plan view.

First, an electroluminescent display device according to a sixth embodiment of this application will be described with reference to FIG. 10. 10 is a plan view illustrating an example of an arrangement structure of a light guide in the electroluminescent display device according to this application.

The electroluminescent display device according to this application includes a plurality of pixels arranged in a matrix manner. One pixel may include several sub-pixels. For example, one pixel may include a red sub-pixel (R), a white sub-pixel (W), a green sub-pixel (G), and a blue sub-pixel (B). In addition, these sub-pixels have a rectangular shape having a long length in a vertical direction, and may have a structure that is continuously arranged in a horizontal direction. The number of sub-pixels and the arrangement method are not limited to those shown in FIG. 10.

One pixel P may be divided into an emission area EA and a circuit area CA. The light-emitting area EA is an area in which the light-emitting element OLE and the color filter CF are disposed. The circuit area CA is an area in which circuit elements including the switching thin film transistor ST and the driving thin film transistor DT are disposed.

An emission area OA may be defined in the emission area EA. In the sixth embodiment of this application, one light exit area OA may be disposed for each pixel P. In addition, one light exit area OA may be disposed over a series of sub-pixels. For example, as shown in FIG. 10, the light emission area OA is in a horizontal direction crossing the red sub-pixel R, the white sub-pixel W, the green sub-pixel G, and the blue sub-pixel B. It can have a long square shape. In addition, the location of the emission area OA may be located in the center of the emission area EA. However, the shape and arrangement position of the light exit area OA is not limited to FIG. 10.

<Seventh embodiment>

Hereinafter, an electroluminescent display device according to a seventh embodiment of this application will be described with reference to FIG. 11. 11 is a plan view illustrating another example of an arrangement structure of a light guide in the electroluminescent display device according to this application.

The electroluminescent display device according to the seventh embodiment of this application includes a plurality of pixels arranged in a matrix manner. One pixel may include several sub-pixels. For example, one pixel may include a red sub-pixel (R), a white sub-pixel (W), a green sub-pixel (G), and a blue sub-pixel (B). In addition, these sub-pixels have a rectangular shape having a long length in a vertical direction, and may have a structure that is continuously arranged in a horizontal direction. The number of sub-pixels and the arrangement method are not limited to those shown in FIG. 11.

One pixel P may be divided into an emission area EA and a circuit area CA. The light-emitting area EA is an area in which the light-emitting element OLE and the color filter CF are disposed. The circuit area CA is an area in which circuit elements including the switching thin film transistor ST and the driving thin film transistor DT are disposed.

In each sub-pixel, an emission area OA may be defined in the emission area EA. In the seventh exemplary embodiment of the present application, one light exit area OA may be individually disposed for each sub-pixel. For example, as shown in FIG. 11, a first light-emitting area OA1 is in the center of the red sub-pixel R, a second light-out area OA2 is in the center of the white sub-pixel W, and a green sub-pixel. A third light-emitting area OA3 may be disposed in the center of (G) and a fourth light-emitting area OA4 may be disposed in the center of the blue sub-pixel B.

The first to fourth light emitting regions OA1 to OA4 may have a rectangular shape having a long length in a vertical direction, but are not limited thereto, and may have various shapes such as a square, a regular polygonal circle, or an ellipse. However, the shape and arrangement position of the light exit area OA is not limited to FIG. 11.

<Eighth Example>

Here, an electroluminescent display device according to an eighth embodiment of this application will be described with reference to FIGS. 12A to 12C. 12A to 12C are plan views illustrating various examples in which sub-pixels and a light guide of the electroluminescent display device according to this application are arranged.

The electroluminescent display device according to this application includes a plurality of pixels arranged in a matrix manner. One pixel may include several sub-pixels. For example, one pixel may include a red sub-pixel (R), a white sub-pixel (W), a green sub-pixel (G), and a blue sub-pixel (B). In addition, these sub-pixels have a rectangular shape having a long length in a vertical direction, and may have a structure that is continuously arranged in a horizontal direction. Although not shown in the drawing, the four sub-pixels may be arranged in a 2x2 matrix structure. As another example, it may be arranged in a pentile method, which is an arrangement method in which one sub-pixel is disposed for each vertex of a pentagon. Alternatively, the sub-pixels may have a rectangular shape having a long length in the horizontal direction, and may have a structure that is continuously arranged in the vertical direction.

One pixel P may be divided into an emission area EA and a circuit area CA. The light-emitting area EA is an area in which the light-emitting element OLE and the color filter CF are disposed. The circuit area CA is an area in which circuit elements including the switching thin film transistor ST and the driving thin film transistor DT are disposed.

First, it will be described with reference to FIG. 12A. An emission area OA may be defined in the emission area EA. One light emission area OA may be disposed for each pixel P. Here, the light exit area OA corresponds to the opening and may be referred to as an opening, but hereinafter, the light exit area OA is collectively referred to as the light exit area OA. In addition, one light exit area OA may be disposed over a series of sub-pixels. For example, as shown in FIG. 12A, the light emission area OA is in a horizontal direction crossing the red sub-pixel R, the white sub-pixel W, the green sub-pixel G, and the blue sub-pixel B. It can have a long polygonal shape. In particular, the areas of the light-exiting regions OA formed in each of the sub-pixels are not the same and may have different sizes.

For example, the area of the light emission area OA disposed in the blue sub-pixel B may have the largest size, and the area of the light emission area OA disposed in the white sub-pixel W is the smallest size. I can have it. In addition, the areas of the light-emitting area OA disposed in the red sub-pixel R and the green sub-pixel G are the same, smaller than the light-emitting area OA disposed in the blue sub-pixel B, and the white sub-pixel It may be larger than the light exit area OA disposed in (W). The present invention is not limited thereto, and the size and opening area of the light exit area OA may be formed in various ways.

Next, it will be described with reference to FIG. 12B. A light-emitting area may be defined in the light-emitting area EA. Two light emitting regions may be disposed in one sub-pixel. For example, as illustrated in FIG. 12B, two first light emitting areas OA1 may be disposed in the red sub-pixel R. Two second light emitting areas OA2 may be disposed in the white sub-pixel W. Two third light emitting areas OA3 may be disposed in the green sub-pixel G. In addition, two fourth light emitting regions OA4 may be disposed in the blue sub-pixel B.

Here, the light exit regions may have the same shape and the same size. However, it is not limited thereto, and may have various configurations. For example, in order to have different areas of the light emission areas disposed in the sub-pixels, the number of light emission areas may be different from each other. In addition, the light emitting regions formed in each of the sub-pixels may not be formed to have the same area, but may have different sizes.

Next, it will be described with reference to FIG. 12C. A light-emitting area may be defined in the light-emitting area EA. At least one light emitting area OA may be disposed in one sub-pixel. For example, as illustrated in FIG. 12C, one first light emitting area OA1 may be disposed in the red sub-pixel R. The first light exit area OA1 may have an elliptical shape. One second light emitting area OA2 may also be disposed in the white sub-pixel W. The second light exit area OA2 may have a circular shape. The area of the elliptical first light exit area OA1 may be larger than the area of the circular second light emission area OA2. Two third light emitting areas OA3 may be disposed in the green sub-pixel G. The third light exit area OA3 may have a circular shape. For example, the total area of the third light emission area OA3 may be smaller than the area of the first light emission area OA1 and larger than the area of the second light emission area OA2. Finally, three fourth light-emitting areas OA4 may be disposed in the blue sub-pixel B. An area of one fourth light exit area OA4 may be the same as an area of one third light emission area OA3. As a result, the total area of the fourth emission area OA4 may be larger than the total area of the third emission area OA3.

In this way, the light emitting regions arranged in each sub-pixel may have various sizes, shapes, and number of arrangements. For example, in order to change the area of the light emission area disposed in the sub-pixel, the size of the light emission area may be different or the number of light emission areas may be different from each other.

Features, structures, effects, and the like described in the examples of this application described above are included in at least one example of this application, and are not necessarily limited to only one example. Furthermore, the features, structures, effects, and the like illustrated in at least one example of this application may be combined or modified for other examples by a person having ordinary knowledge in the field to which this application belongs. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of this application.

This application described above is not limited to the above-described embodiments and the accompanying drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical matters of this application. It will be obvious to those who have the knowledge of. Therefore, the scope of this application is indicated by the claims to be described later, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of this application.

SUB: Substrate BM: Light-shielding layer
100: light guide layer 200: element layer
210: driving element layer 220: light emitting element layer
ENC: Encapsulation layer OLE: Light-emitting element
ST: switching thin film transistor DT: driving thin film transistor
ANO: first electrode (anode electrode) EL: light-emitting layer
CAT: second electrode (cathode electrode) CF: color filter
P: Pixel EA: Light-emitting area
CA: circuit area OA: light emitting area
110: light incident area 120: light guide area
OP: opening 170: reflective layer

Claims (19)

A substrate including a plurality of pixels having a driving region and a light emitting region;
A light blocking layer having an opening disposed in the pixel on the substrate;
A light guide layer disposed on the light blocking layer and having a light exit area, a light incident area, and a light guide area; And
A device layer disposed on the light guide layer and including a driving element disposed in the driving region and a light emitting element disposed in the light emitting region,
The opening corresponds to the light exit area,
The light-incident area corresponds to the light-emitting area,
The light guide region guides light emitted from the light emitting device and incident to the light-incident region to the light-emitting region, and emits light to the outside of the substrate through the opening. The method of claim 1,
An electroluminescent display device in which an area of the light exit area is smaller than an area of the light incident area. The method of claim 1,
The light guide layer is an electroluminescent display device made of a material that reflects light. The method of claim 1,
An electroluminescent display device further comprising a color filter disposed in the opening on the substrate. The method of claim 1,
The device layer,
An electroluminescent display device further comprising a color filter disposed corresponding to the light incident area. The method of claim 1,
The light guide layer,
A first planarization layer stacked on the light blocking layer;
A light guide trench with a portion of the first planarization layer removed;
A light reflective layer formed on a sidewall of the light guide trench and disposed from the light incident region to the light exit region; And
And a second planarization layer that fills the light guide trench surrounded by the light reflective layer and covers an upper surface of the light reflective layer. The method of claim 6,
The driving element is disposed on the second planarization layer,
The light emitting element is disposed on a flat protective layer covering the driving element,
The electroluminescent display device further comprises a color filter disposed between the second planarization layer and the light emitting element and corresponding to the light incident area. The method of claim 6,
Further comprising a color filter formed between the light reflection layer on the substrate exposed to the light guide trench,
The second planarization layer is stacked on the color filter. The method of claim 1,
Further comprising a color filter disposed in the opening on the substrate,
The light guide layer,
A first planarization layer stacked on the light blocking layer and the color filter;
An inorganic layer stacked on the first planarization layer;
A light guide trench formed by removing the inorganic layer and the first planarization layer on the color filter;
A light reflective layer formed on a sidewall of the light guide trench and disposed from the light incident region to the light exit region; And
An electroluminescent display device comprising a flat passivation layer that fills the light guide trench surrounded by the light reflective layer and covers an upper surface of the light reflective layer and the driving element. The method of claim 9,
The light emitting device is an electroluminescent display device disposed on the flat passivation layer. The method of claim 1,
The light emitting device,
A first electrode connected to the driving element;
A bank defining the emission area in the first electrode;
An emission layer stacked on the bank and the first electrode exposed to the emission area; And
An electroluminescent display device comprising a second electrode stacked on the emission layer. The method of claim 1,
The pixel,
Including a plurality of sub-pixels having a single color different from each other,
The opening is,
An electroluminescent display device disposed across the plurality of sub-pixels in common. The method of claim 12,
The opening is,
An electroluminescent display device having different sizes in each of the sub-pixels. The method of claim 1,
The pixel,
Including a plurality of sub-pixels having a single color different from each other,
The opening is,
An electroluminescent display device disposed at least one for each of the sub-pixels. The method of claim 14,
The opening is,
An electroluminescent display device having different sizes, different shapes, or different numbers for each of the sub-pixels. The method of claim 1,
The light guide area,
An electroluminescent display device having an inverted triangular structure in which a vertical cross-sectional shape linearly decreases in width from the light incident area to the light emission area. The method of claim 1,
The light guide area,
An electroluminescent display device having a funnel structure in which a vertical cross-sectional shape is non-linearly narrowed from the light incident area to the light output area. The method of claim 17,
The light guide area,
An electroluminescent display device having a funnel structure in which both side walls are convex. The method of claim 17,
The light guide area,
An electroluminescent display device having a funnel structure in which both side walls are concave.

Images