KR20170017151A

KR20170017151A - Probe pin and method for manufacturing the same

Info

Publication number: KR20170017151A
Application number: KR1020150110649A
Authority: KR
Inventors: 황규호; 박영근; 김광호
Original assignee: (주)엠투엔
Priority date: 2015-08-05
Filing date: 2015-08-05
Publication date: 2017-02-15
Also published as: KR101766261B1

Abstract

A probe pin is disclosed, wherein the probe pin comprises: a metallic body; And a coating layer that is bonded to an outer circumferential surface of the metal body, wherein the metal body is combined with a first metal layer that provides rigidity and elasticity and a second metal layer that provides conductivity.

Description

[0001] PROBE PIN AND METHOD FOR MANUFACTURING THE SAME [0002]

The present invention relates to a probe pin and a method of manufacturing the same.

In general, the electronic device is finally subjected to a defect inspection by an inspection apparatus. In this defect inspection, a probe card, a test socket, or the like is used to electrically connect the electronic device and the inspection apparatus, and the probe card and the test socket include probe pins that are driven between the electronic device and the inspection apparatus.

Regarding such probe pins, a semiconductor test socket has been disclosed in Korean Patent No. 10-1190174. The disclosed test socket uses a configuration made of conductive powder as a probe pin.

However, such a probe pin is made of a single material and has physical and electrical limitations. Thus, the electrical and physical properties of the probe pin itself need to be supplemented.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a probe pin and a method of manufacturing the same that are complementary to physical and electrical characteristics.

According to a first aspect of the present invention, there is provided a probe pin comprising: a metal body; And a coating layer that is bonded to an outer circumferential surface of the metal body, wherein the metal body is combined with a first metal layer that provides rigidity and elasticity and a second metal layer that provides conductivity.

According to a second aspect of the present invention, there is provided a method of manufacturing a probe pin, comprising: preparing a substrate; Forming a patterned photoresist layer on the substrate, the pattern corresponding to the shape of the probe pin; Forming a metal body on the pattern based on the photoresist layer; Polishing the photoresist layer and the metal body; Removing the photoresist layer and the substrate; And forming a coating layer to be bonded to an outer circumferential surface of the metal body, wherein forming the metal body may form at least one of a first metal layer providing rigidity and elasticity and a second metal layer providing conductivity .

According to the above-described task solution of the present invention, the metal body includes a first metal layer providing rigidity and elasticity and a second metal layer providing conductivity, whereby the electrical and physical characteristics of the probe pin can be improved, The coating layer is formed along the perimeter of the probe pin. Thus, oxidation and corrosion of the metal body are prevented by the coating layer, and durability and electrical characteristics of each of the contactor and the connecting body constituting the probe pin can be improved.

1 is a schematic perspective view of a probe pin according to an embodiment of the present invention;
2 is a schematic perspective view of an end shape that a probe pin according to an embodiment of the present invention may have.
Figs. 3 and 4 are schematic cross-sectional views taken along the line I-I of Figs. 1 and 2. Fig.
5 is a schematic cross-sectional view of a probe pin according to one embodiment of the present invention, including an additional metal body.
6 is a block diagram for explaining a procedure of a method of manufacturing a probe pin according to an embodiment of the present invention.
FIG. 7 is a conceptual diagram illustrating a method of manufacturing a probe pin according to an embodiment of the present invention. Referring to FIG.
FIG. 8 is a conceptual diagram illustrating another embodiment of a method of manufacturing a probe pin according to an embodiment of the present invention. Referring to FIG.
FIG. 9 is a sequence diagram for explaining another embodiment of the method of manufacturing a probe pin according to an embodiment of the present invention by a plating process.
FIG. 10 is a conceptual diagram illustrating a step of forming a depression according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

Throughout this specification, the term " combination thereof " included in the expression of the machine form means one or more combinations or combinations selected from the group consisting of the constituents described in the expression of the machine form, And the like.

For reference, the terms related to direction or position (lower side, etc.) in the description of the embodiments of the present application are set based on the arrangement state of each structure shown in the drawings. For example, referring to FIGS. 1 and 3, the 6 o'clock direction may be the lower side or the like.

For reference, in the present application, a probe pin can be applied to a probe card or a test socket for testing various electronic devices.

First, a probe pin according to an embodiment of the present invention will be described.

FIG. 1 is a schematic perspective view of a probe pin according to an embodiment of the present invention, FIG. 2 is a schematic perspective view of an end shape of a probe pin according to an embodiment of the present invention, FIGS. 3 and 4 are cross- And FIG. 5 is a schematic cross-sectional view of a probe pin according to an embodiment of the present invention including an additional metal body.

The probe pin connects the first contact member and the second contact member. Illustratively, when the present probe pin is applied to a probe card, the first contact body may be a semiconductor package and the second contact body may be a printed circuit board installed in the inspection apparatus.

1 and 2, the probe pin is of a flat plate type. The shape of the present probe pin may be exemplarily shown in Figs. 1 and 2. Fig.

3 and 4, the probe pin includes metal bodies 1 and 2 and coating layers 3 and 4 bonded to the outer circumferential surface thereof.

The coating layers 3 and 4 may include a plurality of layers.

Illustratively, the coating layers 3 and 4 are formed on the outer circumferential surfaces of the first coating layer 3 and the first coating layer 3 bonded to the outer circumferential surface of the metal bodies 1 and 2, as shown in Figs. 3 and 4, And a second coating layer 4 bonded thereto. The first coating layer 3 and the second coating layer 4 may be made of a material for complementing the reliability of the metallic bodies 1 and 2. [ For example, the first coating layer 3 and the second coating layer 4 can prevent oxidation and corrosion of the metallic bodies 1 and 2, and ensure reliability of abrasion resistance and performance. Illustratively, the first coating layer 3 may comprise at least one of nickel (Ni) and a nickel alloy (Ni alloy). In addition, the second coating layer 4 may include at least one of gold (Au) and gold alloy. The gold alloy may be a gold-copper alloy (Au-Cu) or a gold-cobalt alloy (Au-Co).

Further, the metal bodies 1 and 2 may include the first metal layer 1 as shown in Fig. The first metal layer 1 may be disposed as a core. In addition, the first metal layer 1 can provide rigidity and elasticity. This can mean that the first metal layer 1 secures the rigidity and elasticity of the present probe pin. Illustratively, the first metal layer 1 may be made of a material with high rigidity and elasticity, such as at least one of palladium (Pd), a palladium alloy (Pd) alloy, nickel (Ni) and a nickel alloy . &Lt; / RTI > Illustratively, the nickel alloy may be a nickel-cobalt alloy (Ni-Co). Further, the palladium alloy may include at least one of a palladium cobalt alloy (Pd-Co) and a palladium nickel alloy (Pd-Ni).

In addition, the metal bodies 1, 2 may include a second metal layer 2 formed to be coupled along the periphery of the first metal layer 1. The second metal layer 2 may provide conductivity. This can mean that the probe pin secures the conductivity by the second metal layer 1. [ The second metal layer 2 may be made of a material having a low electrical resistance and a high electrical conductivity. For example, the second metal layer 2 may comprise at least one of copper (Cu) and a copper alloy (Cu alloy). Illustratively, the copper alloy may be phosphor bronze (Cu-Sn-P).

In another embodiment, the metal bodies 1 and 2 can be combined with the first metal layer 1 on the upper and lower portions of the second metal layer 2, respectively, as shown in FIG. Alternatively, the second metal layer 2 may be bonded to the upper and lower portions of the first metal layer 1, respectively. In other words, the first metal layer 1 and the second metal layer 2 may be alternately stacked.

5, the probe pin may include additional metal bodies 5, 6 interposed between the metal bodies 1, 2 and the coating layers 3, 4. The additional metal bodies 5 and 6 may include a first layer 5 coupled to the outer circumferential surface of the metal bodies 1 and 2 and a second layer 6 coupled to the outer circumferential surface of the first layer 5 have.

Further, as shown in Fig. 5, the additional metal bodies 5, 6 may include a first layer 5 which is additionally formed on the second layer 6.

The first layer 5 may be made of the same material as the first metal layer 1 and the second layer 6 may be made of the same material as the second metal layer 2 described above. Alternatively, the first layer 5 may be made of the same material as the second metal layer 2, and the second layer 6 may be made of the same material as the first metal layer 1.

Hereinafter, a method for manufacturing a probe pin according to an embodiment of the present invention (hereinafter referred to as "the present manufacturing method") for manufacturing a probe pin according to an embodiment of the present invention will be described. However, the same reference numerals are used for the same or similar components as those described in the method of manufacturing a probe pin according to one embodiment of the present invention, and redundant explanations will be simplified or omitted.

FIG. 6 is a block diagram illustrating a procedure of a probe pin manufacturing method according to an embodiment of the present invention. FIG. 7 is a conceptual diagram illustrating a method of manufacturing a probe pin according to an embodiment of the present invention. FIG. 8 is a conceptual diagram illustrating a method of manufacturing a probe pin according to another embodiment of the present invention. FIG. 9 is a cross-sectional view of a probe pin according to another embodiment of the method of manufacturing a probe pin according to an embodiment of the present invention FIG. 10 is a conceptual diagram illustrating a step of forming a depression according to an embodiment of the present invention. Referring to FIG.

First, one embodiment of the present manufacturing method will be described. According to one embodiment, as shown in Fig. 3, the first metal layer 1 and the metal body 1, 2 including the second metal layer 2 formed along the periphery of the first metal layer 1, A probe pin can be manufactured.

6 and 7A, the present manufacturing method includes a step 81 (S100) of preparing a substrate. The substrate 81 may be a silicon wafer.

6 and 7 (b), the present manufacturing method includes forming a seed layer 82 (S200). As shown in FIG. 7 (b), the seed layer 82 may be formed on the substrate 81.

Thereby, the metallic bodies 1 and 2 can be effectively deposited. If the seed layer 82 is not deposited, it is difficult for the metal bodies 1 and 2 to be deposited on the substrate 81 and even if the metal bodies 1 and 2 are deposited on the substrate 81, At least a part of the metal bodies 1 and 2 can be separated from the substrate 81 while the substrates 1 and 2 are being deposited on the substrate 81. [ Therefore, it is preferable that a step of forming the seed layer 82 on the substrate 81 is performed.

For example, the seed layer 82 may be gold or copper, and the seed layer 82 may be formed by a physical vacuum deposition method used in a general semiconductor manufacturing process such as evaporation or sputtering .

6 and 7C, the manufacturing method includes a step S300 of forming a patterned photoresist layer 83 on a substrate 81 in a pattern corresponding to the shape of a probe pin, . &Lt; / RTI > The patterning corresponding to the shape of the probe pin means, for example, that the planar shape when the probe pin is viewed from the top is patterned in the case of FIG.

The patterned photoresist layer 83 may be formed as follows.

Illustratively, a photoresist layer 83 is entirely deposited on the substrate 81, and then an exposure and development process is performed using a mask having a pattern corresponding to the shape of the probe pins, A patterned photoresist layer 83 may be formed.

6 and 7 (d), the present manufacturing method includes a step (S400) of forming metal bodies 1 and 2 in a pattern based on the patterned photoresist layer 83 . At this time, the step S400 of forming the metal bodies 1 and 2 may be a step of forming the first metal layer 1 in the pattern as shown in Fig. 7 (d).

The first metal layer 1 may include a nickel alloy. Illustratively, the nickel alloy may be a nickel-cobalt alloy (Ni-Co).

6 and 7 (e), the manufacturing method may include polishing the photoresist layer 83 and the metal body 1 (S500). As shown in FIG. 7 (e), the step of polishing (S500) can polish the first metal layer 1 and the photoresist layer 83.

The polishing step S500 may polish the photoresist layer 83 and the first metal layer 1 so that the first metal layer 1 has a predetermined thickness. The polishing step S500 may further polish the photoresist layer 83 and the first metal layer 1 using a chemical mechanical polishing (CMP) process. According to this chemical mechanical polishing, the thickness of the metal body 1, 2 can be adjusted. Accordingly, the thickness of the first metal layer 1 can be precisely manufactured to a predetermined thickness.

6 and 7 (h), the present manufacturing method may include removing the photoresist layer 83 and the substrate 81 (S600). The seed layer 92 would have been formed on the substrate 81 and will be removed with the substrate 81 in step S600. Accordingly, only the first metal layer 1 can be left.

7 (i), the present manufacturing method may include the step of forming a second metal layer 2 along the periphery of the first metal layer 1. The second metal layer 2 may include at least one of copper (Cu) and a copper alloy (Cu alloy). Illustratively, the copper alloy may be phosphor bronze (Cu-Sn-P).

Accordingly, the metal body 1, 2 having the first metal layer 1 and the second metal shell 2 formed along the circumference of the first metal layer can be realized.

6 and 7 (i), the present manufacturing method may include a step (S700) of forming coating layers 3 and 4 to be bonded to the outer circumferential surfaces of the metal bodies 1 and 2 . The step of forming the coating layers 3 and 4 S700 includes the steps of forming a first coating layer 3 to be bonded to the outer circumferential surface of the metallic bodies 1 and 2 and forming a first coating layer 3 to be bonded to the outer circumferential surface of the first coating layer 3 2 < / RTI > coating layer (4).

The first coating layer 3 may comprise at least one of nickel (Ni) and nickel alloy (Ni alloy). In addition, the second coating layer 4 may include at least one of gold (Au) and gold alloy. The gold alloy may be a gold-copper alloy (Au-Cu) or a gold-cobalt alloy (Au-Co).

Hereinafter, another embodiment of the present manufacturing method will be described. According to another embodiment, as shown in Fig. 4, a probe pin having metal bodies (1, 2) in which a first metal layer 1 and a second metal layer 2 are alternately laminated can be manufactured.

6 and 7C, the manufacturing method includes a step S300 of forming a patterned photoresist layer 83 on a substrate 81 in a pattern corresponding to the shape of a probe pin, . &Lt; / RTI >

6, the manufacturing method may include forming metal bodies 1 and 2 on the pattern based on the patterned photoresist layer 83 (S400).

More specifically, the step S400 of forming the metal bodies 1 and 2 includes the steps of forming the first metal layer 1 on the pattern as shown in Fig. 8D, As shown, the step of polishing the photoresist layer 83 and the first metal layer 1 includes the step of forming a photoresist layer 83 on the polished photoresist layer 83, as shown in Figure 8 (f) A step of further forming a second metal layer 2 on the first metal layer 2 based on the further formed photoresist layer 83 as shown in Figure 8 (g) . Accordingly, the metal bodies 1 and 2 in which the first metal layer 1 and the second metal layer 2 are stacked in two layers can be realized.

4, when the first metal layer 1 and the second metal layer 2 need to be alternately stacked in three layers to form the metal bodies 1 and 2, After the step of further laminating the metal layer 2, the step of polishing the further formed photoresist layer 83 and the second metal layer 2, the step of forming a photoresist layer 83 on the further polished photoresist layer 83, (83), and further forming a first metal layer (1) on the second metal layer (2) based on the re-added photoresist layer (83).

9 (d1), the first metal layer 1 is formed by a plating process, and referring to FIG. 9 (d2), the step of forming the metal bodies 1, The second metal layer 2 is formed on the first metal layer 1 by a plating process and the first metal layer 2 is formed on the second gold layer 2 As shown in Fig. That is, in step S400 of forming the metal bodies 1 and 2, the first metal layer 1 and the second metal layer 2 are laminated without forming the photoresist layer 83, have. Thus, the metal bodies 1 and 2 can be easily formed.

For reference, the plating process may be one of electroplating and electroless plating.

For reference, the first metal layer 1 may include at least one of palladium (Pd), a palladium alloy (Pd alloy), nickel (Ni) and a nickel alloy. Illustratively, the nickel alloy may be a nickel-cobalt alloy (Ni-Co). In addition, the palladium alloy may include at least one of palladium cobalt alloy (Pd-Co) and palladium nickel alloy (Pd-Ni).

In addition, the second metal layer 2 may include at least one of copper (Cu) and a copper alloy (Cu alloy). Illustratively, the copper alloy may be phosphor bronze (Cu-Sn-P).

In addition, referring to Fig. 6, the present manufacturing method may include polishing the metallic bodies 1 and 2 (S500). The polishing step S500 may polish the photoresist layer 83 and the metal layer (the first metal layer 1 or the second metal layer 2) formed last in the step of forming the metal body (S400).

In steps S400 and S500, polishing may cause the first metal layer 1 (or the second metal layer 2) to be polished to have a predetermined thickness.

6, the manufacturing method may include removing the photoresist layer 83 and the substrate 81 (S600). Thus, the metal bodies 1 and 2 in which the first metal layer 1 and the second metal layer 2 are alternately stacked can be manufactured. If necessary, the first metal layer 1 and the second metal layer 2 may be alternately stacked in order. Although the number of the laminated layers of the first metal layer 1 and the second metal layer 2 may vary, only two layers and three layers are referred to herein. However, if necessary, the first metal layer 1 and the second metal layer 2, (2) may be stacked in five layers.

6, the manufacturing method may include forming the coating layers 3 and 4 along the circumference of the metallic bodies 1 and 2 (S700). The step S700 of forming the coating layers 3 and 4 includes the steps of forming the first coating layer 3 along the circumference of the metallic bodies 1 and 2 and forming the first coating layer 3 along the periphery of the first coating layer 3, (4). &Lt; / RTI >

The present manufacturing method also includes a step S100 of preparing the substrate 81 and a step of forming the seed layer 82 when the probe pin includes the depressed portion 98 in the downward direction as shown in Fig. And forming a depression 98 between step S200.

The step of forming the depression portion 98 may include depositing a wet etch mask film 86 on the substrate 81 as shown in Figure 10 (b1).

Further, the step of forming the depression portion 98 may include the step of forming the patterned mask layer 87, as shown in Fig. 10 (b2). The mask layer 87 may be one in which the depression 98 is patterned.

Further, the step of forming the depression portion 98 may include patterning the wet etching mask thin film 86, based on the patterned mask layer 87, as shown in Figure 10 (b3) have.

Further, the step of forming the depression portion 98 may include a step of wet-etching the substrate with anisotropic etching liquid, as shown in (b4) of Fig. Through this step, the depressed portion 98 may be formed in the substrate 81. The anisotropic etchant may be one of a KOH solution, an IPA solution and a TMAH solution.

As described above, steps S200 to S700 are performed on the substrate 81 on which the recessed portion 98 is formed, whereby the probe pin can be manufactured.

Between step S600 of removing the photoresist layer 83 and the substrate 81 and step S700 of forming coating layers 3 and 4 bonded to the outer circumferential surfaces of the metal bodies 1 and 2, (5, 6) interposed between the body (1, 2) and the coating layer (3, 4).

The step of forming the additional metal bodies 5 and 6 includes the steps of forming a first layer 5 on the outer circumferential surface of the metal bodies 1 and 2 and forming a second layer 6 on the first layer 5, To form a second layer.

Also, if necessary, the step of forming the additional metal bodies 5, 6 may comprise further forming a first layer 5 on the second layer 6.

The first layer 5 may be made of the same material as the first metal layer 1 and the second layer 6 may be made of the same material as the second metal layer 2. Alternatively, the first layer 5 may be made of the same material as the second metal layer 2, and the second layer 6 may be made of the same material as the first metal layer 1.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1: first metal layer 2: second metal layer
3: first coating layer 4: second coating layer
81: substrate 82: seed layer
83: photoresist 86: wet etching mask thin film
87: mask layer 98: depression portion

Claims

In the probe pin,
Metal body; And
And a coating layer bonded to an outer circumferential surface of the metal body,
Wherein the metallic body is a combination of a first metallic layer providing stiffness and resilience and a second metallic layer providing conductivity.

The method according to claim 1,
Wherein the coating layer comprises a first coating layer bonded to an outer circumferential surface of the metal body and a second coating layer bonded to an outer circumferential surface of the first coating layer.

3. The method of claim 2,
Wherein the first coating layer comprises at least one of nickel (Ni) and a nickel alloy (Ni alloy).

3. The method of claim 2,
Wherein the second coating layer comprises at least one of gold (Au) and gold alloy.

5. The method of claim 4,
Wherein the gold alloy is a gold-copper alloy (Au-Cu) or a gold-cobalt alloy (Au-Co).

The method according to claim 1,
Wherein the first metal layer is disposed as a core and the second metal layer is configured to be coupled along a circumference of the first metal layer.

The method according to claim 1,
Wherein the first metal layer is bonded to the upper and lower portions of the second metal layer.

The method according to claim 1,
And the second metal layer is bonded to the upper and lower portions of the first metal layer.

The method according to claim 1,
Further comprising an additional metal body interposed between the metal body and the coating layer,
The additional metal body includes a first layer coupled to an outer circumferential surface of the metal body and a second layer coupled to an outer circumferential surface of the first layer,
Wherein the first layer is made of the same material as the first metal layer, the second layer is made of the same material as the second metal layer,
or,
Wherein the first layer is made of the same material as the second metal layer, and the second layer is made of the same material as the first metal layer.

10. The method according to any one of claims 6 to 9,
Wherein the first metal layer comprises at least one of palladium (Pd), a palladium alloy (Pd alloy), nickel (Ni), and a nickel alloy.

11. The method of claim 10,
Wherein the nickel alloy is a nickel-cobalt alloy (Ni-Co).

11. The method of claim 10,
Wherein the palladium alloy comprises at least one of a palladium cobalt alloy (Pd-Co) and a palladium nickel alloy (Pd-Ni).

10. The method according to any one of claims 6 to 9,
Wherein the second metal layer comprises at least one of copper (Cu) and a copper alloy (Cu alloy).

14. The method of claim 13,
Wherein the copper alloy is phosphor bronze (Cu-Sn-P).

In the method for producing a probe pin,
Preparing a substrate;
Forming a patterned photoresist layer on the substrate, the pattern corresponding to the shape of the probe pin;
Forming a metal body on the pattern based on the photoresist layer;
Polishing the photoresist layer and the metal body; And
Removing the photoresist layer and the substrate; And
And forming a coating layer on the outer circumferential surface of the metal body,
Wherein forming the metallic body comprises forming at least one of a first metallic layer providing stiffness and elasticity and a second metallic layer providing conductivity.

16. The method of claim 15,
Wherein the forming of the coating layer comprises:
Forming a first coating layer on the outer circumferential surface of the metal body; And
And forming a second coating layer on the outer circumferential surface of the first coating layer.

17. The method of claim 16,
Wherein the first coating layer comprises at least one of nickel (Ni) and a nickel alloy (Ni alloy).

17. The method of claim 16,
Wherein the second coating layer comprises at least one of gold (Au) and gold alloy.

19. The method of claim 18,
Wherein the gold alloy is a gold-copper alloy (Au-Cu) or a gold-cobalt alloy (Au-Co).

16. The method of claim 15,
The forming of the metal body may include:
Forming a first metal layer on the pattern,
Between the step of removing the photoresist layer and the substrate and the step of forming the coating layer,
And forming the second metal layer along the periphery of the first metal layer.

16. The method of claim 15,
The forming of the metal body may include:
Forming a first metal layer on the pattern;
Polishing the photoresist layer and the first metal layer;
Further forming the photoresist layer on the photoresist layer;
Further stacking a second metal layer on the first metal layer based on the photoresist layer formed additionally;
Polishing the photoresist layer and the second metal layer formed additionally;
Further forming the photoresist layer on the photoresist layer formed additionally; And
Further comprising laminating a first metal layer on the second metal layer based on the photoresist layer re-formed,
Wherein the step of polishing the metal body comprises polishing the first metal layer formed on the photoresist layer and the second metal layer, which are formed again.

16. The method of claim 15,
The forming of the metal body may include:
Forming a first metal layer on the pattern by a plating process;
Depositing a second metal layer on the first metal layer by a plating process; And
And further laminating the first metal layer on the second metal layer by a plating process.

16. The method of claim 15,
Between the step of removing the photoresist layer and the substrate and the step of forming a coating layer to be bonded to the outer circumferential surface of the metal body,
Further comprising forming an additional metal body interposed between the metal body and the coating layer,
Wherein forming the additional metal body comprises:
Forming a first layer on an outer circumferential surface of the metal body; And
And forming a second layer on the first layer,
Wherein the first layer is made of the same material as the first metal layer, the second layer is made of the same material as the second metal layer,
or,
Wherein the first layer is made of the same material as the second metal layer, and the second layer is made of the same material as the first metal layer.

24. The method according to any one of claims 20 to 23,
Wherein the first metal layer comprises at least one of palladium (Pd), a palladium alloy (Pd alloy), nickel (Ni), and a nickel alloy.

25. The method of claim 24,
Wherein the nickel alloy is a nickel-cobalt alloy (Ni-Co).

25. The method of claim 24,
Wherein the palladium alloy comprises at least one of a palladium cobalt alloy (Pd-Co) and a palladium nickel alloy (Pd-Ni).

24. The method according to any one of claims 20 to 23,
Wherein the second metal layer comprises at least one of copper (Cu) and a copper alloy (Cu alloy).

28. The method of claim 27,
Wherein the copper alloy is phosphor bronze (Cu-Sn-P).

16. The method of claim 15,
When the probe pin includes a downwardly recessed portion,
Between the step of preparing the substrate and the step of forming the seed layer,
And forming said recessed portion,
Wherein the step of forming the depression comprises:
Forming a wet etch mask thin film on the substrate;
Forming a patterned mask layer in a pattern corresponding to the depression portion;
Patterning the wet etch mask thin film based on the mask layer; And
And etching the substrate.