KR20160146260A - Light Emitting Diode Package - Google Patents
Light Emitting Diode Package Download PDFInfo
- Publication number
- KR20160146260A KR20160146260A KR1020150083280A KR20150083280A KR20160146260A KR 20160146260 A KR20160146260 A KR 20160146260A KR 1020150083280 A KR1020150083280 A KR 1020150083280A KR 20150083280 A KR20150083280 A KR 20150083280A KR 20160146260 A KR20160146260 A KR 20160146260A
- Authority
- KR
- South Korea
- Prior art keywords
- led
- package
- led chip
- graphene
- current diffusion
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000020169 heat generation Effects 0.000 claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000013464 silicone adhesive Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000004020 conductor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED package, and more particularly, to a high performance white LED by combining a ceramic phosphor plate on a blue LED, which is one of the methods of implementing a high performance white LED chip. The present invention relates to an LED package having excellent characteristics by forming a graphene in a ceramic phosphor plate used in an LED packaging process to smoothly diffuse current, reduce heat generation, reduce refractive index and discharge heat smoothly
In general, a light emitting diode (LED) is a device that emits light by flowing a current to a compound semiconductor such as gallium nitride (GaN) or indium gallium nitride (InGaN).
These light emitting diodes (LEDs) are made of conductive materials made of p-type GaN and n-type GaN. When current is passed through them, electrons and electrons are supplied and the electrons are coupled at the center of the conductive material (multi quantum well) , Various colors can be implemented depending on the characteristics of the conductive material.
In recent years, LED chips are increasingly produced with high output power, and heat generated from the chips during driving greatly affects the LED performance. In order to realize a high output LED chip, it is required to supply smooth flow and maximize extraction efficiency It is an essential technology. Various techniques have been reported to fabricate LED chip to increase light extraction efficiency.
However, it has been reported that the characteristics of the LED are deteriorated due to the heat generated in the chip packaging process and the increase of the reflected wave due to the refractive index difference of the medium.
As described above, if the LED chip is not provided with a smooth current supply, a reduced heat generation, a good heat dissipation, and a reduction in the difference in refractive index, it is pointed out that deterioration of the LED element and reduction of efficiency due to an increase in reflected wave are pointed out.
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a white LED package by forming a graphene on a ceramic phosphor plate, To an LED package for the purpose of reducing heat change and refractive index variation.
According to another aspect of the present invention, there is provided a method of manufacturing a LED package, the method comprising: fabricating a ceramic phosphor plate for an LED package according to an embodiment of the present invention; Forming a graphene on a ceramic phosphor plate; And finally mounting on an LED chip.
According to various embodiments of the present invention, the formation of graphene having excellent thermal and electrical characteristics provides smooth current supply, reduction of difference in refractive index, reduction of heat generation, and increase of heat emission efficiency, Can be obtained.
1 is a view illustrating a package for reducing heat emission and refractive index change according to an exemplary embodiment of the present invention.
FIG. 2 is a package diagram for smooth current diffusion, heat generation reduction, excellent heat emission, and reduction of refractive index change according to an embodiment of the present invention.
Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a view illustrating an LED package with reduced heat emission and refractive index change according to an exemplary embodiment of the present invention. Referring to FIG.
1, an LED package 1, a
FIG. 2 is a view illustrating an LED package with reduced current diffusion, reduced heat generation, excellent heat emission, and reduced refractive index change according to an exemplary embodiment of the present invention.
2, an LED package 2, a
According to various embodiments of the present invention, the LED packages (1) and (2) which have reduced current diffusion, heat generation reduction, excellent heat release and refractive index change can play an important role in GaN-based LED devices. Especially, by arranging the LED packages (1) and (2) in LED application fields (general lighting, automobile, street lamp, industrial LED, etc.) requiring high output power, smooth current diffusion, reduction of heat generation, It is possible to obtain a reduced effect, and excellent packaging characteristics can be expected.
The LED packages (1) and (2) are obtained including all types of vertical and horizontal LED chips and LED chips of various wavelengths from the UV region to the infrared region.
The
Graphene 20, which is implemented for the purpose of smooth current diffusion, reduction of heat generation, and excellent heat dissipation and reduction of refractive index change, can be obtained by processes such as coating, deposition, and growth And it is possible to obtain proper characteristics of Graphene by using various impurity doping.
The implemented LED can be mounted on LED to obtain LED package for smooth current diffusion, reduction of heat generation, excellent heat emission and reduction of refractive index.
1: LED package (including adhesive (Silicone) 2: LED package (without adhesive)
10: Ceramic fluorescent plate 20: Graphene
30: Silicone 40: Current diffusion layer
50: p-type GaN layer 60: active layer
70: n-type GaN layer
Claims (4)
A ceramic phosphor plate;
The phosphor plate includes a phosphor-containing substrate;
An LED package having a ceramic phosphor plate containing Graphene
An LED package that utilizes impurity doping in graphene for smooth current diffusion of LED chip, reduction of heat generation, and excellent heat dissipation and reduction of refractive index change.
LED Chip mounting space;
A package that does not use or use silicone (silicone) adhesive for smooth mounting of LED chip
A package that exhibits excellent heat dissipation and reduced refractive index change when using a silicone adhesive in the LED chip mounting
A package capable of additionally obtaining effects of smooth current diffusion and heat generation due to excellent electrical characteristics of the graphene due to the dielex mounting in the current diffusion layer when the silicon chip adhesive is not used in the LED chip mounting
The LED chip includes LEDs of all wavelengths and types,
The LED chip includes an LED package including a current diffusion layer and a current diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150083280A KR20160146260A (en) | 2015-06-12 | 2015-06-12 | Light Emitting Diode Package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150083280A KR20160146260A (en) | 2015-06-12 | 2015-06-12 | Light Emitting Diode Package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160146260A true KR20160146260A (en) | 2016-12-21 |
Family
ID=57734762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150083280A KR20160146260A (en) | 2015-06-12 | 2015-06-12 | Light Emitting Diode Package |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20160146260A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755411A (en) * | 2019-01-14 | 2019-05-14 | 宁波石墨烯创新中心有限公司 | Packaging film and preparation method thereof, encapsulating structure and preparation method thereof |
-
2015
- 2015-06-12 KR KR1020150083280A patent/KR20160146260A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755411A (en) * | 2019-01-14 | 2019-05-14 | 宁波石墨烯创新中心有限公司 | Packaging film and preparation method thereof, encapsulating structure and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |