KR20140012226A - Solar cell module - Google Patents
Solar cell module Download PDFInfo
- Publication number
- KR20140012226A KR20140012226A KR1020120078035A KR20120078035A KR20140012226A KR 20140012226 A KR20140012226 A KR 20140012226A KR 1020120078035 A KR1020120078035 A KR 1020120078035A KR 20120078035 A KR20120078035 A KR 20120078035A KR 20140012226 A KR20140012226 A KR 20140012226A
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- KR
- South Korea
- Prior art keywords
- silicone resin
- solar cell
- substrate
- cell module
- sealing material
- Prior art date
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- 229920002050 silicone resin Polymers 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000007789 sealing Methods 0.000 claims abstract description 37
- 239000011247 coating layer Substances 0.000 claims abstract description 10
- 239000003566 sealing material Substances 0.000 claims description 63
- 239000011248 coating agent Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 22
- 238000002834 transmittance Methods 0.000 claims description 11
- 239000005038 ethylene vinyl acetate Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 10
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229920002620 polyvinyl fluoride Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002657 fibrous material Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 229920006294 polydialkylsiloxane Polymers 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000000326 ultraviolet stabilizing agent Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000004447 silicone coating Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
The present invention relates to a solar cell module.
Photovoltaic power generation, which converts light energy into electrical energy using a photoelectric conversion effect, is widely used as a means for obtaining pollution-free energy. And with the improvement of the photoelectric conversion efficiency of a solar cell, the photovoltaic power generation system which uses many solar cell modules is installed also in a private house.
The solar cell module including a plurality of solar cells generated by solar light includes a protection member disposed above and below the solar cell to protect the solar cell from an external environment such as external shock and moisture.
The technical problem to be achieved by the present invention is to provide a solar cell module with improved long-term reliability.
According to one aspect of the invention, the solar cell module comprises a plurality of solar cells; A light transmissive front substrate positioned toward the front surface of the solar cells; A back film comprising a base film and a silicone resin coating layer coated on at least one side of the base film, the back surface being positioned toward the back surface of the solar cells such that the silicon resin coating film faces a plurality of solar cells. Board; And a silicone resin, the sealing member sealing a plurality of solar cells between the light transmissive front substrate and the rear substrate, wherein the entire rear surface of the sealing member is in direct contact with the silicone resin coating film.
The base film may be made of polyethylene terephthalate (PET) resin or polybutylene terephthalate (PBT) resin.
The back substrate including the base film and the silicone resin coating film has a tensile strength of 30 MPa or more, may have a light transmittance of 50% or less at 300 nm to 500 nm, and a light reflectance of 40% or more at 300 nm to 500 nm. Can be.
The sealing member may include a first sealing material located between the front substrate and the solar cell and a second sealing material located between the solar cell and the rear substrate, the first sealing material may be formed of a first silicone resin, and the second The sealing material may be formed of the second silicone resin.
In this case, the first silicone resin and the second silicone resin may be formed of the same silicone resin including the same component, or may be formed of different silicone resins including different components.
The second silicone resin and the silicone resin coating film may be formed of the same silicone resin including the same component, or may be formed of different silicone resins including different components.
The bonding surface of the first silicone resin and the second silicone resin may be formed as a non-flat surface.
According to this feature, since the sealing member is formed of a silicone resin, the rear substrate includes a silicone resin coating film, and the entire rear surface of the sealing member is in direct contact with the silicone resin coating film, the sealing member and the rear substrate are made of different materials. Compared with the case formed, the adhesion between the sealing member and the back substrate is very excellent.
For example, in the case of a Tedlar coated PET-based conventional back substrate, the adhesive force (vertical peel strength) with the sealing member formed of silicone resin is 10 kg / cm 2 to 15 kg / cm 2, however, in the case of the back substrate of this embodiment of the PTI series in which the silicone resin coating film is formed, the adhesive force of the sealing member formed of the silicone resin is 15 kg / cm 2 or more, and thus the adhesive force of the sealing member and the rear substrate is improved.
Therefore, the penetration of moisture, oxygen, and impurities through the interface between the sealing member and the rear substrate can be effectively prevented for a long time, so the long-term reliability of the solar cell module is excellent.
When the back substrate is made of only silicone resin, a fiber material such as glass glass is used to reinforce the strength of the solar cell module. However, when the fiber material is used, current leakage may occur.
However, since the back substrate of the present embodiment is manufactured by forming a silicone resin coating film on a Piti-based base material, the strength of the solar cell module can be maintained even without using a fibrous material. Therefore, there is no fear of current leakage.
In addition, the silicone resin coating film coated on the base film is more durable than Tedler due to the temperature difference. It can be suppressed.
And various kinds of additives can be added to the silicone resin coating film as needed.
For example, an ultraviolet stabilizer may be added to the silicone resin coating layer or dyes of various colors may be added.
And since the interface of a 1st sealing material and a 2nd sealing material is formed in the non-planar surface, the light incident through the front substrate is diffusely reflected at the interface of a 1st sealing material and a 2nd sealing material. Therefore, the amount of light incident on the solar cell is increased to improve the output of the solar cell module.
1 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a first embodiment of the present invention.
FIG. 2 is a graph showing light absorption coefficients of the first silicone resin and ethylene vinyl acetate according to the wavelength range of light.
3 is an enlarged view of a portion “C” of FIG. 1.
FIG. 4 is a process chart showing a method of manufacturing the solar cell module shown in FIG. 1.
5 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a first modified embodiment of FIG. 1.
6 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a second modified embodiment of FIG. 1.
7 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a second embodiment of the present invention.
8 is a flowchart illustrating a method of manufacturing the solar cell module shown in FIG. 7.
DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.
In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between.
Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. In addition, when a part is formed as "whole" on another part, it includes not only the part formed on the entire surface (or the entire surface) of the other part but also the part not formed on the edge part.
Next, a solar cell module according to an embodiment of the present invention will be described with reference to the accompanying drawings.
1 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to an embodiment of the present invention.
The solar cell module according to the present embodiment includes a plurality of
The light transmissive
The sealing
The
The first silicone resin forming the first sealing
Referring to FIG. 2, the extinction coefficient (cm −1 ) of the first silicone resin and the ethylene vinyl acetate (EVA) according to the wavelength of light is as follows.
In the graph shown in FIG. 2, the graph "A" is a graph showing the change of the absorption coefficient of light of EVA according to the wavelength range of light, and the graph "B" is the light of the
EVA used in the experiment is a conventional product used as a sealing member of a solar cell, and the first silicone resin used in the graph "B" is polydimethylsiloxane (PDMS).
As shown in Fig. 2, the light absorption coefficient of EVA in the short wavelength band, for example, 300 nm to 500 nm, is higher than that of PDMS. Therefore, the light absorption in the short wavelength band is lower than that of the first silicone resin EVA.
Low light absorption in the short wavelength band means that the light in the short wavelength band is well transmitted. According to the inventor's experiment, it was found that the first silicone resin, more specifically, the siloxane such as PDMS or PDAS, has a light transmittance of 80% or more in the short wavelength band.
Therefore, when the first silicone resin is used as the
In addition, it is possible to suppress the discoloration problem of the
In addition, since the
For example, the EVA is formed to a thickness of approximately 1.0 mm, but the
In addition, since the curing temperature of the first silicone resin is lower than that of EVA, the modularization process can be performed at a lower temperature, and the curing time can be shortened.
For example, the first silicone resin is cured at a temperature of approximately 80 ° C. or higher, for example, from 90 ° C. to 150 ° C., while the EVA is cured at a temperature of approximately 165 ° C. Thus, the modularization process can be carried out at lower temperatures.
And about 1.5 minutes (min) time is consumed in hardening a 1st silicone resin, but about 16 minutes is used time in hardening EVA. Therefore, the time spent on the hardening and modularization process of a protective film can be shortened.
The
The
However, in order to increase weather resistance of the solar cell module, the thickness of the
Since the light transmittance of the
Therefore, it is possible to prevent the
In the above description, the first silicone resin and the second silicone resin are different silicone resins including different components, but the second silicone resin may be the same silicone resin including the same component as the first silicone resin. .
The interface S of the
Thus, in order to form the interface S of the
As described above, when the interface S between the
The plurality of
The
The
The silicone
For example, the silicone resin for forming the silicone
In order to reduce the light transmittance of the
As described above, various kinds of additives may be added to the silicone resin forming the silicone
For example, an ultraviolet stabilizer may be added to the silicone
In addition, a filler for strength reinforcement may be added to the silicone
The
According to this feature, the entire rear surface of the
However, since the silicone
For example, when the sealing
Therefore, the penetration of moisture, oxygen, and impurities through the interface between the sealing member and the rear substrate can be effectively prevented for a long time, so the long-term reliability of the solar cell module is excellent.
In addition, the interface of the
In this case, after applying the liquid second silicone resin, it is cured at a set temperature to form a
Therefore, since light is diffusely reflected at the interface between the
In addition, since the rear substrate including the silicone
The solar cell module of the present invention can be used a solar cell having a variety of types and structures.
For example, the
The substrate is made of a silicon wafer of a first conductivity type, for example an n-type conductivity type. In this case, the silicon may be monocrystalline silicon, a polycrystalline silicon substrate, or amorphous silicon.
When the substrate has an n-type conductivity type, the substrate contains impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb), and the like.
Alternatively, however, the substrate may be of p-type conductivity type and may be made of a semiconductor material other than silicon.
When the substrate has a p-type conductivity type, the substrate may contain impurities of trivalent elements such as boron (B), gallium, indium and the like.
Such a substrate is formed of a texturing surface on which at least one of the front and back surfaces is textured.
The emitter portion is an impurity portion having a second conductivity type, for example, a p-type conductivity type, which is opposite to the conductivity type of the substrate, and forms a p-n junction with the substrate.
Due to the built-in potential difference due to this pn junction, electron-hole pairs, which are charges generated by light incident on a substrate, are separated into electrons and holes, electrons move toward n-type, and holes move toward p-type. To the side.
Thus, when the substrate is n-type and the emitter portion is p-type, the separated electrons move toward the substrate and the separated holes move toward the emitter portion. Therefore, electrons are the majority carriers in the substrate, and holes are the majority carriers in the emitter portion.
When the emitter portion has a p-type conductivity type, the emitter portion may be formed by doping a substrate with impurities of trivalent elements such as boron (B), gallium (Ga), and indium (In).
Alternatively, when the substrate has a p-type conductivity type, the emitter portion has an n-type conductivity type. In this case, the separated holes move toward the substrate and the separated electrons move toward the emitter portion.
When the emitter part has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be formed by doping the substrate.
The first anti-reflection film may include at least one of a silicon oxide film (SiOx: H), a silicon nitride film (SiNx: H), an aluminum oxide film (AlOx), and a titanium dioxide film (TiO 2 ), and may also function as a passivation film. can do.
The first electrode is electrically and physically connected to the emitter portion. At this time, the first electrode extends in a direction determined substantially in parallel.
This first electrode collects charges, for example holes, that have migrated towards the emitter portion. The first electrode 140 may be a finger electrode, and may further include a current collector for the finger electrode.
The second electrode located at the rear side of the substrate collects the charges moving to the substrate, for example, electrons, and outputs them to the external device. The second electrode may be a finger electrode and may further include a current collector for the finger electrode.
The backside electric field where the second electrode is electrically and physically connected is located on the backside of the substrate and is formed of a region doped with a higher concentration of impurities of the same conductivity type as the substrate, for example, an n + region.
The backside electric field prevents hole movement toward the backside of the substrate by forming a potential barrier due to the difference in impurity concentration with the substrate. Thus, the recombination and disappearance of electrons and holes near the surface of the substrate is reduced.
Like the first anti-reflection film, the second anti-reflection film positioned on the rear side of the rear electric field part where the second electrode is not disposed may be a silicon oxide film (SiOx: H), a silicon nitride film (SiNx: H), an aluminum oxide film (AlOx), It may include at least one film of the titanium dioxide film (TiO 2 ), it may also function as a passivation film.
Hereinafter, a method of manufacturing the solar cell module shown in FIG. 1 will be described with reference to FIG. 4.
First, the first silicon is applied to one surface of the
In this case, a frame having a predetermined height surrounding the
Subsequently, the front substrate coated with the liquid first silicone resin is disposed in an oven, and a curing process is performed for 60 seconds to 120 seconds at a temperature of 80 ° C. or higher, for example, 90 ° C. to 150 ° C. By advancing, the
When the curing process is performed, the
Thereafter, the plurality of
At this time, the operation | work which apply | coats a liquid 2nd silicone resin can also be performed in the state provided with the frame (frame) similarly to the case of apply | coating 1st silicone resin.
According to the application and leveling operation of the second silicone resin, the liquid second silicone resin is also filled in the space between the adjacent
Subsequently, the front substrate coated with the liquid second silicone resin is placed in an oven, and the curing process is performed for 60 seconds to 120 seconds at a temperature of 80 ° C or higher, for example, 90 ° C to 150 ° C. By advancing, the
When the curing process is performed, the
Subsequently, the silicone resin for forming the silicone
At this time, the operation of applying the silicone resin for forming the silicone
Thereafter, after the
Hereinafter, a solar cell module according to a modified embodiment of FIG. 1 will be described with reference to FIGS. 5 and 6.
In the following embodiments, the same components as those in the above-described first embodiment will be denoted by the same reference numerals, and detailed description thereof will be omitted.
5 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a first modified embodiment of FIG. 1, and FIG. 6 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a second modified embodiment of FIG. 1.
5 and 6, the rest of the configuration is the same as the first embodiment described above except that a part of the
FIG. 5 shows that the
5 and 6, when a part of the
Hereinafter, a solar cell module according to another embodiment of the present invention will be described with reference to FIGS. 7 and 8.
7 is a conceptual diagram illustrating a schematic configuration of a solar cell module according to a second embodiment of the present invention, and FIG. 8 is a process diagram illustrating a method of manufacturing the solar cell module shown in FIG. 7.
The
The
Therefore, the
As illustrated in FIG. 8, in the solar cell module having the above-described configuration, the
When the
However, unlike the above-described structure, the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.
10: solar cell 20: interconnect
30: front substrate 40: rear substrate
41: base film 43: silicone resin coating film
50: sealing member 51: first sealing material
53: second sealing material
Claims (11)
A light transmissive front substrate positioned toward a front surface of the solar cells;
A base film and a silicone resin coating layer coated on at least one side of the base film, wherein the silicone resin coating layer faces a back surface of the solar cells so as to face the plurality of solar cells. A rear substrate located; And
A sealing member comprising a silicone resin and sealing the plurality of solar cells between the light transmissive front substrate and the back substrate.
Including;
The entire rear surface of the sealing member is in direct contact with the silicone resin coating film.
The rear substrate is a solar cell module having a tensile strength of 30 MPa or more.
The rear substrate has a light transmittance of 50% or less at 300nm to 500nm.
The rear substrate has a solar cell module having a light reflectance of at least 40% at 300nm to 500nm.
The sealing member includes a first sealing member positioned between the front substrate and the solar cell and a second sealing member positioned between the solar cell and the rear substrate.
The first sealing material is formed of a first silicone resin, the second sealing material is a solar cell module formed of a second silicone resin.
The first silicone resin and the second silicone resin is a solar cell module formed of the same silicone resin containing the same component.
The first silicone resin and the second silicone resin is a solar cell module formed of different silicone resins containing different components.
The second silicone resin and the silicone resin coating film is a solar cell module formed of the same silicone resin containing the same component.
The second silicone resin and the silicone resin coating film is a solar cell module formed of different silicone resins containing different components.
The junction surface of the first silicone resin and the second silicone resin is a non-flat surface solar cell module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020120078035A KR20140012226A (en) | 2012-07-18 | 2012-07-18 | Solar cell module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020120078035A KR20140012226A (en) | 2012-07-18 | 2012-07-18 | Solar cell module |
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KR20140012226A true KR20140012226A (en) | 2014-02-03 |
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KR1020120078035A KR20140012226A (en) | 2012-07-18 | 2012-07-18 | Solar cell module |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3319131A1 (en) * | 2016-11-04 | 2018-05-09 | LG Electronics Inc. | Solar cell panel and back sheet for the same |
WO2019214033A1 (en) * | 2018-05-08 | 2019-11-14 | 北京汉能光伏投资有限公司 | Solar module |
WO2019214095A1 (en) * | 2018-05-08 | 2019-11-14 | 北京汉能光伏投资有限公司 | Solar assembly and solar curtain wall |
-
2012
- 2012-07-18 KR KR1020120078035A patent/KR20140012226A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3319131A1 (en) * | 2016-11-04 | 2018-05-09 | LG Electronics Inc. | Solar cell panel and back sheet for the same |
WO2019214033A1 (en) * | 2018-05-08 | 2019-11-14 | 北京汉能光伏投资有限公司 | Solar module |
WO2019214095A1 (en) * | 2018-05-08 | 2019-11-14 | 北京汉能光伏投资有限公司 | Solar assembly and solar curtain wall |
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