KR20140008592A - Apparatus for deposition and method for fabricating oxide thin film transistor using the same - Google Patents

Abstract

The present invention relates to deposition apparatus and a manufacturing method of an oxide thin film transistor using the same. The oxide thin film transistor using the deposition apparatus can reduce the manufacturing costs and simplify the manufacturing processes through an annealing process on an oxide semiconductor layer by using an electron beam equipped on the deposition apparatus without using additional annealing apparatus. The deposition apparatus comprises: a loader into which the substrate is inserted; an unloader which the substrate is discharged from; a first transfer chamber for transferring the substrate from the loader; a sputtering chamber for depositing the oxide semiconductor layer on the substrate inserted through the first transfer chamber; an electron beam device; and a second transfer chamber for transferring the substrate discharged from the sputtering chamber to the unloader with the electron beam while thermally treating the oxide semiconductor layer. [Reference numerals] (S10) Gate insulation film; (S15) Oxide semiconductor layer; (S20) Thermal treatment; (S25) Etching blocking layer; (S30) Source, drain electrode; (S35) Protective layer; (S40) Pixel electrode; (S5) Gate electrode

Description

Evaporation equipment and manufacturing method of oxide thin film transistor using same {APPARATUS FOR DEPOSITION AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR USING THE SAME}

The present invention relates to a deposition apparatus, by heat treatment of the oxide semiconductor layer in the deposition apparatus without using a separate heat treatment equipment, to simplify the manufacturing process and reduce the manufacturing cost of the deposition apparatus and the oxide thin film transistor using the same It relates to a manufacturing method.

Thin Film Transistors (TFTs) are used in a variety of applications, particularly as switching and driving devices in the display field. In general, an amorphous silicon thin film transistor (a-Si TFT) is used as a driving and switching element of a display, and is currently the most widely used as a device that can be uniformly formed on a large substrate of more than 2 m at a low cost.

However, with the trend toward larger displays and higher image quality, the performance of thin film transistors is also required, so that polycrystalline silicon TFTs having higher mobility than conventional amorphous silicon thin film transistors having a mobility of 0.5 cm ² / Vs are available. ) Has been proposed.

Since polycrystalline silicon thin film transistors have high mobility of tens to hundreds of cm ² / Vs, they can be applied to high-definition displays that were difficult to realize in amorphous silicon thin film transistors. In addition, the polycrystalline silicon thin film transistor has very little deterioration in device characteristics compared to the amorphous silicon thin film transistor. However, polycrystalline silicon thin film transistors are more complicated to fabricate than amorphous silicon thin film transistors, and are difficult to form on large substrates of more than 1 m to date due to technical problems such as limitations in manufacturing equipment and poor uniformity.

Accordingly, recently, an oxide thin film transistor having both the advantages of an amorphous silicon thin film transistor and the advantages of a polycrystalline silicon thin film transistor has been proposed. An oxide thin film transistor is a thin film transistor having an oxide semiconductor layer and has advantages of higher mobility and lower leakage current characteristics than an amorphous silicon thin film transistor. Moreover, thin film transistors having a crystallization process, such as polycrystalline silicon thin film transistors, are disadvantageous to large areas due to lower uniformity during the crystallization process as the large area becomes larger, but oxide thin film transistors are advantageous for large area.

Although not shown, a general method of manufacturing an oxide thin film transistor is as follows.

First, a gate insulating film is formed on the entire surface of the substrate to form a gate electrode on the substrate and cover the gate electrode. An oxide semiconductor layer is formed on the gate insulating layer, and an etch stop layer (ESL) is formed on the oxide semiconductor layer. Subsequently, a source and a drain electrode are formed on the etch stop layer, a protective layer is formed on the source and the drain electrode, and then the protective layer is selectively removed to form a drain contact hole exposing the drain electrode. A pixel electrode connected to the drain electrode is formed through the drain contact hole.

In this case, the oxide semiconductor layer is formed by depositing a metal oxide on the entire surface of the gate insulating film by depositing a substrate on which the gate electrode and the gate insulating film are formed in the deposition equipment, and then discharging the substrate on which the oxide semiconductor layer is formed from the deposition equipment. It is formed by patterning it. In general, annealing process is performed to pattern an oxide semiconductor layer for stabilization of the oxide semiconductor layer, and the heat treatment process is performed by inputting a substrate discharged from the deposition equipment into the heat treatment equipment.

Therefore, before the substrate discharged from the deposition equipment is put into the heat treatment equipment, the oxide semiconductor layer is exposed to the air, and moisture in the air flows into the oxide semiconductor layer. Accordingly, a problem arises in that electrical characteristics of the oxide thin film transistor having the oxide semiconductor layer are degraded.

The present invention is to solve the above problems, by performing a heat treatment process (Annealing Process) to the oxide semiconductor layer through the electron beam (Electron Beam) device provided in the deposition equipment without a separate heat treatment equipment To provide a manufacturing apparatus of an oxide thin film transistor and a method of manufacturing an oxide thin film transistor using the same, which can simplify the manufacturing process and reduce a manufacturing cost.

Deposition equipment of the present invention for achieving the above object is a loader and a unloader for discharging the substrate; A first transfer chamber for transferring the substrate from the loader; A sputtering chamber for depositing an oxide semiconductor layer on the substrate introduced through the first transfer chamber; And a second transfer chamber having an electron beam device for transferring the substrate discharged from the sputtering chamber to the unloader and thermally treating the oxide semiconductor layer.

And transfer means for transferring the substrate to the loader, the first transfer chamber, the sputtering chamber, the second transfer chamber and the unloader.

The electron beam apparatus is fixed to the second transfer chamber and irradiates an electron beam to the oxide semiconductor layer formed on the substrate moving through the transfer means.

The heat treatment is carried out at a temperature of 200 ℃ ~ 700 ℃.

The first transfer chamber changes the medium vacuum state to a high vacuum state, and the second transfer chamber changes the high vacuum state to a medium vacuum state.

A first buffer chamber provided between the loader and the first transfer chamber; And a second buffer chamber provided between the second transfer chamber and the unloader.

The first buffer chamber changes the atmospheric pressure state to a medium vacuum state, and the second buffer chamber changes the medium vacuum state to an atmospheric pressure state.

In addition, the manufacturing method of the oxide thin film transistor of the present invention for achieving the same object comprises the steps of forming a gate electrode on the substrate; Forming a gate insulating film on the entire surface of the substrate to cover the gate electrode; Forming an oxide semiconductor layer on the gate insulating film in the sputtering chamber using a deposition apparatus including a sputtering chamber and a transfer chamber having an electron beam device adjacent to the sputtering chamber, and forming the oxide semiconductor layer in the transfer chamber. Heat treatment; Forming an etch stop layer on the oxide semiconductor layer; Forming a source and a drain electrode on the etch stop layer; Forming a protective layer formed on the source and drain electrodes and exposing the drain electrode; And selectively removing the protective layer to form a pixel electrode on the protective layer to be connected to the exposed drain electrode.

The electron beam device is fixed to the transfer chamber and irradiates an electron beam to the oxide semiconductor layer formed on the substrate moving through a transfer means.

The heat treatment is carried out at a temperature of 200 ℃ ~ 700 ℃.

As described above, the deposition apparatus of the present invention and the manufacturing method of the oxide thin film transistor using the same have the following effects.

First, since the heat treatment means is provided in the deposition equipment and does not include a separate heat treatment equipment, it is possible to reduce the cost of using the equipment and improve the yield. In particular, by providing an electron beam device in the transfer chamber for transporting the substrate discharged from the sputtering chamber, the heat treatment of the oxide semiconductor layer can be performed only by irradiating the electron beam onto the moving substrate.

Second, the process of forming an oxide semiconductor layer by depositing a metal oxide in a deposition apparatus and a heat treatment process are continuously performed to shorten the process time, and after forming the oxide semiconductor layer, the substrate is in the air to proceed with the heat treatment process. Exposure can be prevented. Therefore, it is possible to prevent the moisture in the air from flowing into the oxide semiconductor layer and lowering the electrical characteristics of the oxide thin film transistor.

Third, heat treatment may be performed only on the surface of the oxide semiconductor layer by irradiating an electron beam from the upper portion of the substrate.

1 is a block diagram of a deposition equipment of the present invention.
2 is a flow chart showing the manufacturing steps of the oxide thin film transistor of the present invention.
3A to 3H are cross-sectional views of an oxide thin film transistor of the present invention.

Hereinafter, the deposition equipment of the present invention and a method of manufacturing an oxide thin film transistor using the same will be described in detail.

1 is a block diagram of a deposition apparatus of the present invention.

As illustrated in FIG. 1, the deposition apparatus of the present invention includes a loader 10, a first buffer chamber 12 connected to the loader 10, a first transfer chamber 14 connected to the first buffer chamber 12, and a first transfer. A sputtering chamber 16 connected to the chamber 14 to perform deposition, a second transfer chamber 18 connected to the sputtering chamber 16, a second buffer chamber 20 connected to the second transfer chamber 18, and a first And an unloader 22 connected to the two buffer chambers 20, wherein a gate valve 30 is formed between the chambers, and the gate valve 30 seals the chambers with each other.

The substrate is arranged along the transfer means in a line with the loader 10, the first buffer chamber 12, the first transfer chamber 14, the sputtering chamber 16, the second transfer chamber 18, and the second buffer chamber ( 20) and the unloader 22, the loader 10 and the unloader 22 is located in a different position can be deposited inline.

In particular, the first and second buffer chambers 12 and 20 are for keeping the inside of the sputtering chamber 16 in a vacuum at all times. In detail, when the inside of the sputtering chamber 16 is exposed every time the substrate is moved to the sputtering chamber 16, the pressure inside the sputtering chamber 16 may be changed, and thus the deposition quality may be degraded. Accordingly, the first and second buffer chambers 12 and 20 are connected to the sputtering chamber 16 through the first transfer chamber 14 and the second transfer chamber 18, respectively.

Accordingly, when the gate valve 30 between the first buffer chamber 12 and the first transfer chamber 14 is opened for the transfer of the substrate, the gate between the first transfer chamber 14 and the sputtering chamber 16 is opened. Since the valve 30 remains locked, the sputtering chamber 16 is not exposed to atmospheric pressure. Similarly, when the gate valve 30 between the second transfer chamber 18 and the second buffer chamber 20 is opened for transfer of the substrate, the gate valve between the sputtering chamber 16 and the second transfer chamber 18. Since the 30 remains locked, the sputtering chamber 16 can maintain a high vacuum state.

Driving of the deposition equipment of the present invention as described above is as follows.

First, the substrate is drawn into the loader 10. At this time, the substrate is in a state where a gate electrode and a gate insulating film are formed. The substrate is transferred to the first buffer chamber 12 along the transfer means. The first buffer chamber 12 acts as a buffer in an atmospheric state and a vacuum state. When the substrate of the loader 10 is transferred to the first buffer chamber 12, the internal pressure of the first buffer chamber 12 is at atmospheric pressure. It becomes a medium vacuum (about 1 Torr-10 ^-4 Torr) state, and transfers a board | substrate to the 1st transfer chamber 14 in a medium vacuum state.

The first transfer chamber 14, which transfers the substrate from the first buffer chamber 12 to the sputtering chamber 16, is intended to keep the sputtering chamber 16 in a high vacuum state. When the transfer is in a high vacuum (about 10 ^-4 Torr or less) state in the medium vacuum state, the substrate is transferred to the sputtering chamber 16 in a high vacuum state.

The sputtering chamber 16 deposits a metal oxide on the substrate in a high vacuum state to form an oxide semiconductor layer on the entire surface of the substrate. In detail, ions such as argon (Ar) collide with the targets of negative charges at high speed on the plasma generated by the external power source, and the atoms of the targets stick out to be deposited on the gate insulating film to form an oxide semiconductor layer.

Then, the substrate on which the oxide semiconductor layer is formed is discharged from the sputtering chamber 16, and the substrate is transferred to the second transfer chamber 18. At this time, the second transfer chamber 18 transfers the substrate between the sputtering chamber 16 and the second buffer chamber 20. When the substrate is transferred from the sputtering chamber 16, the second transfer chamber 18 becomes a medium vacuum state in a high vacuum state. The substrate is transferred to the second buffer chamber 20.

On the other hand, the oxide thin film transistor including the oxide semiconductor layer is generally put the substrate discharged from the deposition equipment in a separate heat treatment equipment, by performing a heat treatment on the oxide semiconductor layer, thereby improving the characteristics of the thin film transistor.

However, in the above method, since the oxide semiconductor layer is exposed to the atmosphere before the substrate discharged from the deposition equipment is input to the heat treatment equipment, moisture in the atmosphere flows into the oxide semiconductor layer. As a result, not only the electrical characteristics of the oxide semiconductor layer are lowered, but also the problem that the contact characteristics of the etch blocking layer, the source electrode and the drain electrode, and the oxide semiconductor layer are formed on the oxide semiconductor layer is lowered.

Therefore, the deposition equipment of the present invention includes a heat treatment means in the deposition equipment, and thus does not have a separate heat treatment equipment, thereby reducing the cost of using the equipment, while reducing the process time and at the same time the electrical characteristics of the oxide thin film transistor This deterioration can be prevented.

Specifically, the deposition apparatus of the present invention includes heat treatment means in the second transfer chamber 18 for transferring the substrate on which the oxide semiconductor layer is formed to the second buffer chamber 20. At this time, an electron beam device is provided as the heat treatment means.

The electron beam apparatus includes an electron beam generator and an electron beam emitter. The electron beam generating unit uses a hot filament method of heating a tungsten filament and applying a negative DC voltage to the tungsten filament to emit electrons, and creating a shielded plasma to extract electrons from the plasma to accelerate the electron beam Generates. The generated electron beam is irradiated onto the surface of the oxide semiconductor layer through the electron beam emitter to thermally treat the oxide semiconductor layer.

At this time, the heat treatment utilizes the conversion of the kinetic energy (eV) of electrons to thermal energy. The kinetic energy of an electron means the energy when one electron accelerates to the potential of 1V, and when it converts 1eV in the unit of absolute temperature, it is about 11300K. However, since the mass of electrons is very small, the heat treatment process of the oxide semiconductor layer proceeds at about 200 ° C to 700 ° C, and the higher the density of the electron beam, the higher the heat received by the oxide semiconductor layer.

In particular, since the substrate is transferred from the second transfer chamber 18 to the second buffer chamber 20 along the transfer means, the electron beam device is fixed to the second transfer chamber 18 and is emitted from the fixed electron beam device. The electron beam may be irradiated onto the moving substrate to thermally process the oxide semiconductor layer by a scan method.

Therefore, the deposition apparatus of the present invention as described above is provided with a heat treatment means in the deposition equipment does not have a separate heat treatment equipment can reduce the cost of using the equipment. In addition, the deposition process and the heat treatment process of the oxide semiconductor layer in one deposition equipment is continuously performed to shorten the process time, and after the deposition process, by preventing the substrate is exposed to the atmosphere to proceed with the heat treatment process, Moisture in the water can be prevented from flowing into the oxide semiconductor layer to lower the electrical characteristics of the oxide thin film transistor.

In particular, the general heat treatment process is heat treated at a high temperature using a heat treatment equipment such as a hot plate, so that not only the oxide semiconductor layer but also the substrate, the gate electrode and the gate insulating film are exposed to high temperature. However, since the present invention uses an electron beam, only the oxide semiconductor layer is exposed to the electron beam.

That is, by providing the electron beam device in the transfer chamber for transferring the substrate, rather than further comprising a heat treatment chamber in the deposition equipment, the heat treatment can be performed only by irradiating the electron beam on the moving substrate.

Subsequently, when the substrate is transferred from the second transfer chamber 18 to the second buffer chamber 20, the second buffer chamber 20 is at atmospheric pressure in the medium vacuum state, and the substrate is transferred along the transfer means at atmospheric pressure. It is transferred from the buffer chamber 20 to the unloader 22.

Meanwhile, although one sputtering chamber is illustrated in the drawing, the deposition apparatus may include a plurality of sputtering chambers.

Hereinafter, a method of manufacturing the oxide thin film transistor of the present invention will be described in detail with reference to the accompanying drawings.

2 is a flowchart illustrating process steps of the oxide thin film transistor of the present invention, and FIGS. 3A to 3H are process cross-sectional views of the oxide thin film transistor of the present invention.

First, as shown in FIGS. 2 and 3A, a gate metal layer is formed on the substrate 100 by a sputtering method, and the gate metal layer is patterned to form a gate wiring (not shown) and a gate electrode 110a (S5). In this case, the gate metal layer may be aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium (Ti), platinum ( It may be a low resistance opaque conductive material such as Pt) or tantalum (Ta), or a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). In addition, the gate metal layer may have a multilayer structure in which the opaque conductive material and the transparent conductive material are stacked.

Subsequently, the gate insulating layer 110 is formed of a material such as a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), or the like on the entire surface of the substrate 100 to cover the gate electrode 110a (S10). In this case, the gate insulating layer 110 is formed by a vapor deposition method such as physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like.

3B, an oxide semiconductor layer 120 is formed by depositing a metal oxide on the entire surface of the gate insulating layer 110 (S15). At this time, the metal oxide comprises at least one metal such as zinc (Zn), cadmium (Cd), gallium (Ga), indium (In), tin (Sn), hafnium (Hf), zirconium (Zr) and the like. In comparison with the metal oxide amorphous silicon, the effective mobility of charge is greater, and the oxide thin film transistor using the above metal oxide as a semiconductor layer has excellent semiconductor characteristics.

At this time, the oxide semiconductor layer 120 is formed in the sputtering chamber of the deposition equipment. Specifically, ions such as argon (Ar) collide with targets of negative charge at high speed on the plasma generated by an external power source, and atoms of the targets stick out to the outside and are deposited on the gate insulating layer 110, thereby forming an oxide semiconductor layer ( 120) is formed.

Next, as illustrated in FIG. 3C, an annealing process is performed on the oxide semiconductor layer 120 (S20). The heat treatment process is to improve the film quality of the oxide semiconductor layer 120. The grain size and crystallinity of the oxide semiconductor layer 120 may be changed through the heat treatment process to manufacture a high quality oxide thin film transistor.

In general, a method of manufacturing an oxide thin film transistor, as described above, after forming the oxide semiconductor layer 120 using a deposition apparatus, a substrate on which the gate electrode 110a, the gate insulating film 110 and the oxide semiconductor layer 120 are deposited 100 is further added to the provided heat treatment equipment, and the oxide semiconductor layer 120 is subjected to a heat treatment step.

However, in the above method, since the substrate 100 is discharged from the deposition equipment and the substrate 100 is put back into the heat treatment equipment, the oxide semiconductor layer 120 is exposed to the atmosphere, and moisture in the atmosphere is exposed to the oxide semiconductor layer. Flows into 120. Therefore, not only the electrical characteristics of the oxide semiconductor layer 120 are degraded, but also the contact characteristics of the etch blocking layer, the source electrode and the drain electrode, and the oxide semiconductor layer 120 formed on the oxide semiconductor layer 120 are lowered. Occurs.

Accordingly, the method of manufacturing the oxide thin film transistor of the present invention includes a heat treatment means in the deposition equipment for forming the oxide semiconductor layer 120 to overcome the above problems. At this time, the heat treatment means is an electron beam device, the electron beam device is provided in the transfer chamber of the deposition equipment.

The transfer chamber is a chamber for transferring the substrate 100 on which the oxide semiconductor layer 120 is formed in the sputtering chamber to the unloader. The substrate 100 is seated on the transfer means provided in the transfer chamber and transferred to the unloader. The beam device is fixed to the transfer equipment. In addition, the electron beam emitted from the fixed electron beam device may be irradiated onto the moving substrate 100 to thermally process the oxide semiconductor layer 120 in a scan manner.

Heat treatment using an electron beam device utilizes the conversion of kinetic energy (eV) of electrons to thermal energy. The kinetic energy of an electron means the energy when one electron accelerates to the potential of 1V, and when it converts 1eV in the unit of absolute temperature, it is about 11300K. However, since the electron mass is very small, the heat treatment process of the oxide semiconductor layer 120 proceeds at about 200 ° C. to 700 ° C., and the higher the density of the electron beam, the higher the heat received by the oxide semiconductor layer 120.

In particular, since a general heat treatment process is performed at a high temperature using a heat treatment equipment such as a hot plate, not only the oxide semiconductor layer 120 but also the substrate 100, the gate electrode 110a, and the gate insulating layer 110 may be heated at a high temperature. Exposed. However, since the present invention uses an electron beam, only the oxide semiconductor layer 120 is exposed to the electron beam.

Therefore, the method of manufacturing the oxide thin film transistor of the present invention can not only provide a separate heat treatment equipment, but also heat treatment the oxide semiconductor layer 120, thereby simplifying the manufacturing process and reducing the manufacturing cost, oxide oxide semiconductor By preventing the layer 120 from being exposed to the outside, moisture in the air may flow into the oxide semiconductor layer 120 to prevent deterioration of electrical characteristics of the oxide thin film transistor.

Subsequently, as illustrated in FIG. 3D, the heat-treated oxide semiconductor layer 120 is patterned to correspond to the gate electrode 110a, and then, as shown in FIG. 3E, an etch stop layer 130 is formed on the oxide semiconductor layer 120 ( S25). The etch stop layer 130 is formed of a material such as SiO ₂ , SiNx, and the like, to prevent the oxide semiconductor layer 120 from being damaged when patterning a source and a drain electrode, which will be described later. The etch stop layer 130 may be formed by a plasma enhanced chemical vapor deposition (PECVD) method.

3F, the data metal layer is formed on the entire surface of the gate insulating layer 110 including the etch blocking layer 130, and the data metal layer is patterned to form the source, drain electrodes 140a and 140b and the gate insulating layer 110. A data line (not shown) intersecting with the gate line (not shown) is formed with the gap (S30).

In detail, the data metal layer may be patterned by a wet etching method or a dry etching method. In particular, when the etch stop layer 130 is not acid resistant to the etching solution, it is preferable to pattern the data metal layer by a dry etching method using an etching gas.

Next, as shown in FIG. 3G, the passivation layer 150 is formed on the entire surface of the gate insulating layer 110 to cover the source and drain electrodes 140a and 140b (S35). The passivation layer 150 may be an inorganic passivation layer or an organic passivation layer, or may have a structure in which an inorganic passivation layer and an organic passivation layer are sequentially stacked.

After the protective film 150 is selectively removed to form the drain contact hole 150a exposing the drain electrode 140b, the drain film 140 is connected to the drain electrode 140b through the drain contact hole 150a as shown in FIG. 3H. The pixel electrode 160 is formed on the passivation layer 150 (S40). The pixel electrode 160 forms a transparent conductive material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), and the like on the entire passivation layer 150. It is formed by patterning a transparent conductive material using a mask.

That is, in the method of manufacturing the oxide thin film transistor of the present invention as described above, the thermal processing equipment is not additionally provided for the thermal processing of the oxide semiconductor layer 120, and the deposition equipment is provided with the thermal processing means. The oxide semiconductor layer 120 is thermally treated by irradiating an electron beam. Accordingly, the manufacturing process can be simplified and the manufacturing cost can be reduced. Furthermore, by preventing the oxide semiconductor layer 120 from being exposed to the air, moisture in the air may flow into the oxide semiconductor layer 120 to prevent the electrical characteristics of the oxide thin film transistor from deteriorating.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

10: loader 12: first buffer chamber
14: first transfer chamber 16: sputtering chamber
18: second transfer chamber 20: second buffer chamber
22: unloader 30: gate valve
100 substrate 110 gate insulating film
110a: gate electrode 120: oxide semiconductor layer
130: etch stop layer 140a: source electrode
140b: drain electrode 150: protective layer
150a: drain contact hole 160: pixel electrode
200: electron beam device

Claims (10)

A loader into which a substrate is inserted and an unloader for discharging the substrate;
A first transfer chamber for transferring the substrate from the loader;
A sputtering chamber for depositing an oxide semiconductor layer on the substrate introduced through the first transfer chamber; And
And a second transfer chamber having an electron beam device for transferring the substrate discharged from the sputtering chamber to the unloader and thermally treating the oxide semiconductor layer. The method of claim 1,
And transfer means for transferring said substrate to said loader, first transfer chamber, sputtering chamber, second transfer chamber, and unloader. The method of claim 1,
And the electron beam apparatus is fixed to the second transfer chamber and irradiates an electron beam to the oxide semiconductor layer formed on the substrate moving through the transfer means. The method of claim 1,
Deposition equipment, characterized in that the heat treatment is performed at a temperature of 200 ℃ ~ 700 ℃. The method of claim 1,
And the first transfer chamber changes the medium vacuum state to a high vacuum state, and the second transfer chamber changes the high vacuum state to a medium vacuum state. The method of claim 1,
A first buffer chamber provided between the loader and the first transfer chamber; And
And a second buffer chamber provided between the second transfer chamber and the unloader. The method according to claim 6,
Wherein the first buffer chamber changes the atmospheric pressure to a vacuum state, and the second buffer chamber changes the vacuum state to an atmospheric pressure state. Forming a gate electrode on the substrate;
Forming a gate insulating film on the entire surface of the substrate to cover the gate electrode;
Forming an oxide semiconductor layer on the gate insulating film in the sputtering chamber using a deposition apparatus including a sputtering chamber and a transfer chamber having an electron beam device adjacent to the sputtering chamber, and forming the oxide semiconductor layer in the transfer chamber. Heat treatment;
Forming an etch stop layer on the oxide semiconductor layer;
Forming a source and a drain electrode on the etch stop layer;
Forming a protective layer formed on the source and drain electrodes and exposing the drain electrode; And
Selectively removing the passivation layer to form a pixel electrode on the passivation layer so as to be connected to the exposed drain electrode. The method of claim 8,
And the electron beam device is fixed to the transfer chamber and irradiates an electron beam to the oxide semiconductor layer formed on the substrate moving through a transfer means. The method of claim 8,
The heat treatment is carried out at a temperature of 200 ℃ to 700 ℃ manufacturing method of the oxide thin film transistor.

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