KR20100060672A - Polishing unit, substrate polishing apparatus having the same and method of polishing substrate using the same - Google Patents

Abstract

PURPOSE: A polishing unit, a substrate polishing device including the same, and a substrate polishing method using the same are provided to uniformly coat a polishing chemical solution on the region where a polishing pad is contacted with the substrate by including a diffusion path formed on the lower side of a polishing pad in a polishing process. CONSTITUTION: A pressure unit(310) rotates and sprays the polishing chemical solution on the upper side of a substrate and polishes the substrate. The pressure unit includes a diffusion path(311b) which diffuses the polishing chemical solution from the center to the end on the contact surface with the substrate. A fluid supply unit(320) is combined with the upper side of the pressure unit and transmits the rotation force to the pressure unit. The fluid supply unit provides the polishing chemical solution to the pressure unit.

Description

Polishing unit, substrate polishing apparatus having same, and substrate polishing method using same {POLISHING UNIT, SUBSTRATE POLISHING APPARATUS HAVING THE SAME AND METHOD OF POLISHING SUBSTRATE USING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to a substrate processing apparatus and a method for polishing and cleaning a semiconductor substrate by a sheet-fed treatment method.

In general, a semiconductor device manufacturing process must repeatedly perform a plurality of unit processes such as a deposition process, a photo process, and an etching process to form and stack thin films. These processes are repeated until the desired circuit pattern is formed on the wafer, and after the circuit pattern is formed, a lot of bending occurs on the surface of the wafer. In recent years, as semiconductor devices become highly integrated, their structures are multilayered, and the number of bends on the surface of the wafer and the step between them are increasing. Unplanarization of the wafer surface causes problems such as defocus in the photolithography process, and thus the wafer surface must be polished periodically to planarize the surface of the wafer.

Various surface planarization techniques are used to planarize the surface of the wafer, but among them, a chemical mechanical polishing (CMP) apparatus that can obtain excellent flatness not only for narrow areas but also for wide areas is mainly used. The chemical mechanical polishing apparatus is an apparatus for polishing a surface of a wafer coated with tungsten, an oxide, or the like by mechanical friction and polishing with a chemical abrasive, and enables very fine polishing.

In addition, as semiconductor devices become more dense, highly integrated, and higher in performance, miniaturization of circuit patterns proceeds rapidly, and contaminants such as particles, organic contaminants, and metal contaminants remaining on the substrate surface have a great effect on device characteristics and production yield. Get mad. For this reason, a cleaning process for removing various contaminants adhering to the substrate surface is very important in the semiconductor manufacturing process, and the substrate cleaning process is performed at the front and rear stages of each unit process for semiconductor manufacturing.

It is an object of the present invention to provide a polishing unit capable of improving polishing efficiency.

It is also an object of the present invention to provide a substrate polishing apparatus having the polishing unit described above.

It is also an object of the present invention to provide a method for polishing a substrate using the polishing unit described above.

A polishing unit according to one feature for realizing the above object of the present invention comprises a pressurizing portion and a fluid supply portion.

A pressurizing portion is formed on the surface contacting the substrate with a diffusion flow path for polishing the substrate while injecting the polishing chemical from the upper portion of the substrate and diffusing the polishing chemical from the central portion to the end portion, and is rotatable. The fluid supply part is coupled to the upper part of the pressing part, transmits rotational force to the pressing part, and provides the polishing chemical liquid to the pressing part.

The pressurizing part may include a chemical liquid nozzle configured to receive the polishing chemical liquid from the fluid supply part and spray the chemical liquid on the substrate, and a pad hole disposed on the substrate to polish the substrate and expose the chemical liquid nozzle to the center at the center thereof. And a polishing pad having the diffusion channel formed on a lower surface thereof.

Further, the substrate polishing apparatus according to one feature for realizing the above object of the present invention comprises a substrate supporting member and a polishing unit.

The substrate support member is mounted on the substrate, and rotates the substrate. The polishing unit polishes the substrate seated on the substrate support member. Specifically, the polishing unit includes a pressurizing portion and a fluid supply portion. A pressurizing portion is formed on a surface in which a diffusion flow path for polishing the substrate while spraying the polishing chemical liquid from the upper part of the substrate seated on the substrate supporting member, the diffusion passage for diffusing the polishing chemical liquid from the center portion to the end portion and in contact with the substrate, is rotatable. The fluid supply part is coupled to the upper part of the pressing part, transmits rotational force to the pressing part, and provides the polishing chemical liquid to the pressing part.

In addition, the substrate polishing method according to one feature for realizing the above object of the present invention is as follows. First, the substrate is mounted on the substrate support member. The pressing unit of the polishing unit is disposed on the upper surface of the substrate. The pressing unit rotates while pressing the substrate while spraying the polishing chemical on the substrate to polish the substrate. The polishing chemical is injected from the lower surface of the pressing portion, and diffuses from the central portion of the pressing portion to the end side of the pressing portion along a diffusion channel formed on the lower surface of the pressing portion.

According to the present invention described above, the polishing chemical is uniformly applied to the entire region where the polishing pad and the substrate are in contact with each other by the diffusion passage formed on the lower surface of the polishing pad during the polishing process. Accordingly, the polishing unit can reduce the consumption amount of the polishing chemical and improve the polishing efficiency.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, the wafer will be described as an example of a semiconductor substrate, but the spirit and scope of the present invention are not limited thereto.

1 is a view schematically showing a sheet type polishing system according to an embodiment of the present invention, and FIG. 2 is a side view illustrating the sheet type polishing system shown in FIG. 1.

1 and 2, the substrate processing system 2000 of the present invention includes a loading / unloading unit 10, an index robot 20, a buffer unit 30, and a main transfer robot. Robot) 50, a plurality of substrate polishing units 1000, and a controller 60.

The loading / unloading unit 10 includes a plurality of load ports 11a, 11b, 11c, and 11d. In this embodiment, the loading / unloading section 11 has four load ports 11a, 11b, 11c, 11d, but the number of load ports 11a, 11b, 11c, 11d is the substrate. It may be increased or decreased depending on the process efficiency and the foot print condition of the processing system 2000.

Front open unified pods (FOUPs) 12a, 12b, 12c, and 12d in which wafers are accommodated are mounted in the load ports 11a, 11b, 11c, and 11d. Each fulcrum 12a, 12b, 12c, 12d is formed with a plurality of slots for accommodating the wafers in a state in which they are arranged horizontally with respect to the ground. The wafers 12a, 12b, 12c, and 12d store wafers processed in each substrate polishing unit 1000 or wafers to be injected into the substrate polishing units 1000. Hereinafter, for convenience of description, the wafers processed by the substrate polishing units 1000 are called processed wafers, and the wafers not yet processed are called raw wafers.

A first transfer passage 41 is formed between the loading / unloading portion 11 and the buffer portion 30, and a first transfer rail 42 is installed in the first transfer passage 41. The index robot 20 is installed on the first transfer rail 42 and moves wafers between the loading / unloading part 11 and the buffer part 30 while moving along the first transfer rail 42. Transfer. That is, the index robot 20 extracts at least one raw wafer from the unpacks 12a, 12b, 12c, and 12d mounted on the loading / unloading unit 11 and loads the raw wafers into the buffer unit 30. . In addition, the index robot 20 extracts at least one processed wafer from the buffer unit 30 and loads the processed wafers into the pools 12a, 12b, 12c, and 12d seated on the loading / unloading unit 11. .

On the other hand, the buffer unit 30 is installed on one side of the first transfer passage 41. The buffer unit 30 accommodates the raw wafers transferred by the index robot 20 and the processed wafers processed by the substrate polishing units.

The main transfer robot 50 is installed in the second transfer passage 43. The second transfer passage 43 is provided with a second transfer rail 44, and the second transfer rail 44 is provided with the main transfer robot 50. The main transfer robot 50 moves along the second transfer rail 44 to transfer wafers between the buffer unit 30 and the substrate polishing units. That is, the main transfer robot 50 pulls out at least one raw wafer from the buffer unit 30 to provide it to the substrate polishing unit 1000, and the wafer processed by the substrate polishing unit 1000, namely, The processed wafer is loaded into the buffer part 30.

The substrate polishing units are disposed at both sides of the second transfer passage 43, and each substrate polishing unit 1000 polishes and cleans the raw wafer to form the processed wafer. The substrate polishing units are disposed such that at least two substrate polishing units face each other with the second transfer passage 43 therebetween. In one example of the present invention, two substrate grinding portions are disposed in parallel along the second transfer passage 43, respectively, on both sides of the second transfer passage 43 in plan view, The number of substrate polishing units disposed on both sides may increase or decrease depending on the process efficiency and footprint of the substrate polishing system 2000.

In addition, the substrate polishing units may be arranged in multiple layers. In one example of the present invention, the substrate polishing units are stacked in two layers, two in one layer.

That is, the substrate polishing units are composed of eight substrate polishing units, and four substrate polishing units disposed in two layers, two in one layer, are disposed at both sides of the second transfer passage 43, respectively. The number of layers in which the substrate polishing units are stacked, the number of substrate polishing units disposed in each layer, and the number of rows in which the substrate polishing units are continuously arranged in parallel are increased according to the process efficiency and footprint of the substrate polishing system 1000. Or decrease. When the number of rows in which the substrate polishing units are arranged in parallel increases, the number of the second transfer passage 43 and the main transfer robot 50 also increases. In addition, when the number of layers on which the substrate polishing units are stacked increases, the number of the main transfer robots 50 may also increase.

As such, since the substrate polishing portions are disposed in a plurality of layers and a plurality of rows, the substrate polishing system 2000 may simultaneously polish and clean a plurality of wafers. Accordingly, the substrate polishing system 2000 may improve process efficiency and productivity and reduce footprint.

Meanwhile, each substrate polishing unit 1000 is connected to the controller 60, and polishes and cleans the raw wafer under the control of the controller 60. That is, the controller 60 controls the substrate polishing unit 1000 to locally adjust the polishing amount of the raw wafer by the substrate polishing unit 1000 to improve the polishing uniformity of the substrate polishing unit 1000. A process of controlling the polishing amount of the substrate polishing unit 1000 by the controller 60 will be described in detail with reference to FIGS. 15 to 18.

Hereinafter, the structure of the substrate polishing unit 1000 will be described in detail with reference to the accompanying drawings.

3 is a perspective view showing the substrate polishing apparatus shown in FIG. 1, and FIG. 4 is a partially cut perspective view specifically showing the substrate support unit and the processing container shown in FIG. 3.

1, 3, and 4, the substrate polishing system 2000 may include a polishing process for polishing an upper surface of the wafer 70 and a cleaning process for cleaning the surface of the wafer 70 after the polishing process. The polishing unit 1000 may proceed sequentially.

In detail, the substrate polishing unit 1000 may include a substrate support unit 100, a container unit 200, a polishing unit 300, first and second processing liquid supply units 400 and 500, It may include a brush unit 600, an aerosol unit 700 and a pad conditioning unit 800.

The substrate support unit 100 is mounted with a wafer 70 transferred from the main transfer robot 50. The substrate support unit 100 supports and fixes the wafer 70 during a polishing process and a cleaning process of the wafer 70. The substrate support unit 100 may include a spin head 110 on which the wafer 70 is seated, and a support 120 supporting the spin head 110. The spin head 110 has a generally circular shape in plan view and gradually decreases in width from an upper surface to a lower surface. In one example of the present invention, the spin head 110 has a size of an upper surface supporting the wafer 70 is smaller than the size of the wafer 70. Therefore, in the side view, the wafer 70 seated on the spin head 110 protrudes outward from the top end of the spin head 110.

The support part 120 is installed below the spin head 110. The support 120 has a generally cylindrical shape, is coupled to the spin head 110, and rotates the spin head 110 during a polishing process and a cleaning process.

The substrate support unit 100 is accommodated in the container unit 200. The container unit 200 includes first and second process bowls 210 and 220, first and second recovery vats 230 and 240, and first and second recovery tubes 251. , 252, and an elevating member 260.

In detail, the first and second processing containers 210 and 220 surround the substrate support unit 100 and provide a process space in which a polishing process and a cleaning process of the wafer 70 are performed. Upper portions of the first and second processing vessels 210 and 220 are respectively opened, and the spin head 110 is exposed through the open upper portions of the first and second processing vessels 210 and 220. In this embodiment, the first and second processing vessels 210 and 220 have a circular ring shape, but the shapes of the first and second processing vessels 210 and 220 are not limited thereto. Can have

In detail, the first processing container 210 may include a sidewall 211, a top plate 212, and a guide part 213. The side wall 211 has a generally circular ring shape and surrounds the substrate support unit 100.

An upper end of the side wall 211 is connected to the top plate 212. The upper plate 212 extends from the side wall 211, and is formed of an inclined surface that is inclined upwardly away from the side wall 211. The top plate 212 has a generally circular ring shape and is spaced apart from the spin head 110 when viewed in plan view and surrounds the spin head 110.

The guide portion 213 includes first and second guide walls 213a and 213b. The first guide wall 213a protrudes from the inner wall of the side wall 211 to face the top plate 212, and is formed of an inclined surface that is inclined downward as it moves away from the side wall, and has a circular ring shape. The second guide wall 213b extends vertically downward from the first guide wall 213a, faces the side wall 211, and has a circular ring shape. The guide part 213 has a treatment liquid scattered to the side surfaces 211 of the first processing container 210 and the inner surfaces of the upper plate 212 during the polishing process of the wafer 70. Guide to flow to the side.

The second processing container 220 is installed outside the first processing container 210. The second processing container 220 surrounds the first processing container 210 and has a size larger than that of the first processing container 210.

In detail, the second processing container 220 may include a sidewall 221 and a top plate 222. The side wall 221 has a generally circular ring shape and surrounds the side wall 211 of the first processing container 210. The side wall 221 is positioned to be spaced apart from the side wall 211 of the first processing container 210 and is connected to the first processing container 210.

An upper end of the side wall 221 is connected to the top plate 222. The upper plate 222 extends from the side wall 221 and is formed of an inclined surface that is inclined upwardly away from the side wall 221. The top plate 222 has a generally circular ring shape and is spaced apart from the spin head 110 when viewed in plan view and surrounds the spin head 110. The top plate 222 faces the top plate 211 of the first processing container 210 on the top plate 211 of the first processing container 210, and the top plate 211 of the first processing container 210. Are spaced apart from

Under the first and second processing vessels 210 and 220, the first and second recovery containers 230 and 240 for recovering the processing liquids used in the polishing process and the cleaning process are installed. The first and second recovery containers 230 and 240 have a generally circular ring shape, and the upper portion thereof is opened. In this embodiment, the first and second recovery container 230 and 240 have a circular ring shape, but the shape of the first and second recovery container 230 and 240 is not limited thereto, and may be variously formed. Can be.

The first recovery container 230 is installed below the first processing container 210 to recover the processing liquid used in the polishing process. The second collection container 240 is installed under the second processing container 220 to recover the processing liquid used in the cleaning process.

In detail, the first recovery container 230 may include a bottom plate 231, a first sidewall 232, a second sidewall 233, and a connection part 234. The bottom plate 231 has a generally circular ring shape and surrounds the support 220. In one example of the present invention, the bottom plate 231 has a longitudinal section 'V' shape to facilitate the discharge of the treatment liquid recovered in the first recovery container 230. As a result, a ring-shaped recovery passage 231a is formed in the bottom plate 231, and the discharge and recovery of the treatment liquid are easy.

The first sidewall 232 extends vertically from the bottom plate 231 to form a first recovery space RS1 for recovering the treatment liquid. The second sidewall 233 is spaced apart from the first sidewall 232 to face the first sidewall 232. The connecting portion 234 is connected to an upper end of the first side wall 232 and an upper end of the second side wall 233, and an inclined surface inclined upward toward the second side wall 233 from the first side wall 232. Is done. The connection part 234 guides the treatment liquid that is out of the first recovery space RS1 to the first recovery space RS1 so that the processing liquid flows into the first recovery space RS1.

The second recovery container 240 is installed outside the first recovery container 230. The second recovery container 240 surrounds the first recovery container 230 and is spaced apart from the first recovery container 230. In detail, the second recovery container 240 may include a bottom plate 241, a first sidewall 242, and a second sidewall 243. The bottom plate 241 has a generally circular ring shape, and surrounds the bottom plate 231 of the first recovery container 230. In one example of the present invention, the bottom plate 241 has a longitudinal section 'V' shape to facilitate the discharge of the treatment liquid recovered in the second recovery container 240. As a result, a ring-shaped recovery passage 241a is formed in the bottom plate 241, and the discharge and recovery of the processing liquid are easy.

The first and second sidewalls 242 and 243 extend vertically from the bottom plate 241 to form a second recovery space RS2 for recovering the treatment liquid, and have a circular ring shape. The first sidewall 242 is positioned between the first sidewall 232 and the second sidewall 233 of the first recovery container 230, and the first sidewall 232 of the first recovery container 230. Surround). The second sidewall 243 of the second recovery container 240 faces the first sidewall 242 with the bottom plate 241 interposed therebetween, and surrounds the first sidewall 242. The second sidewall 243 of the second recovery container 240 surrounds the second sidewall 233 of the first recovery container 230, and has an upper end sidewall 222 of the second processing container 220. Located outside.

During the polishing and cleaning process of the wafer 70, a vertical position between the spin head 110 and the first and second processing containers 210 and 220 is changed according to each process, and the first and second recovery times are changed. The barrels 230 and 240 recover the treatment liquid used in different processes.

Specifically, during the polishing process, the spin head 110 is disposed in the first processing container 210, and the polishing process of the wafer 70 is performed in the first processing container 210. The wafer 70 is rotated by the rotation of the spin head 110 during the polishing process. Accordingly, the processing liquid sprayed on the wafer 70 during the polishing process is scattered toward the inner surface of the side wall 211 and the upper plate 212 of the first processing container 210 by the rotational force of the wafer 70. . The processing liquid buried in the side walls 211 of the first processing container 210 and the inner surfaces of the upper plate 212 flows along the top plate 212 and the side walls 211 of the first processing container 210 in the direction of gravity. The guide part 213 is reached and flows along the inner surface of the guide part 213 in the direction of gravity to be collected in the first recovery container 230.

During the cleaning process after the polishing process, the spin head 110 is disposed below the top plate 222 of the second processing container 220 at the top of the first processing container 210 and rotates during the cleaning process. . Accordingly, the processing liquid provided to the wafer in the cleaning process is scattered to the inner surface of the upper plate 222 and the inner surface of the side wall 221 of the second processing container 220 and to the outer surface of the first processing container 210. The side wall 211 of the first processing container 210 is positioned above the bottom plate 241 of the second recovery container 240, and the processing liquid buried on the outer surface of the first processing container 210 is formed of the first processing container 210. 1 It flows along the outer surface of the processing container 210 to the gravity direction, and is recovered by the said 2nd collection container 240. In addition, the processing liquid buried on the inner surface of the second processing container 220 flows in the direction of gravity along the inner surface of the second processing container 220 and is recovered in the second collecting container.

As described above, the first recovery container 230 recovers the processing liquid used in the polishing process, and the second recovery container 240 recovers the processing liquid used in the cleaning process. Accordingly, the container unit 200 can separate and recover the processing liquid in each process step made in the container unit 200, so that the processing liquid can be reused, and the processing liquid can be easily recovered.

The first recovery container 230 is connected to the first recovery pipe 251, and the second recovery container 240 is connected to the second recovery pipe 252. The first recovery pipe 251 is coupled to the bottom plate 231 of the first recovery container 230, the first recovery pipe 251 on the bottom plate 231 of the first recovery container 230. The first recovery hole 231b is formed to communicate with. The treatment liquid recovered in the first recovery space RS1 of the first recovery container 230 is discharged to the outside through the first recovery pipe 251 via the first recovery hole 231b.

In this embodiment, the container unit 200 includes two processing vessels 210 and 220 and two collecting vessels 230 and 240, but the processing vessels 210 and 220 and the collecting vessel 230. , 240) may increase depending on the number of kinds of treatment liquids used in the polishing and washing processes and the number of kinds of treatment liquids to be separated and recovered.

The second recovery pipe 252 is coupled to the bottom plate 241 of the second recovery container 240, the second recovery pipe 252 on the bottom plate 241 of the second recovery container 240. The second recovery hole 241b is formed in communication with. The treatment liquid recovered in the second recovery space RS2 of the second recovery container 240 is discharged to the outside through the second recovery pipe 252 via the second recovery hole 241b.

In this embodiment, each of the first and second recovery pipes 251 and 252 is provided, but the number of the first and second recovery pipes 251 and 252 is the first and second recovery pipes 251 and 252. It may increase depending on the size and recovery efficiency of the second recovery container (230, 240).

On the other hand, the lifting member 260 that is vertically movable is provided on the outside of the second processing container 220. The elevating member 260 is coupled to the side wall 221 of the second processing container 220, and adjusts vertical positions of the first and second processing containers 210 and 220. In detail, the lifting member 260 may include a bracket 261, a moving shaft 262, and a driver 263. The bracket 261 is fixed to the outer wall 221 of the second processing container 220 and is coupled to the moving shaft 262. The moving shaft 262 is connected to the driver 263 and is moved in the vertical direction by the driver 263.

The elevating member 260 may include the first and second processing containers 210 and 220 when the wafer 70 is seated on the spin head 110 or lifted from the spin head 110. The first and second processing vessels 210 and 220 are lowered to protrude to the upper portion of the first and second processing vessels 210 and 220. When descending, the first and second sidewalls 232 and 233 and the connection portion 234 of the first recovery container 230 are connected to the sidewall 211 and the first and second guide walls of the first processing container 210. It is drawn into the space formed by 213a and 213b.

In addition, the elevating member 260 may process the first and second treatments to separate and recover the processing liquid used in the polishing process and the processing liquid used in the cleaning process during the polishing process and the cleaning process of the wafer 10. Lifting and lowering the vessels 210 and 220 adjusts the relative vertical position between each of the treatment vessels 210 and 220 and the spin head 110.

In this embodiment, the substrate polishing part 1000 vertically moves the first and second processing vessels 210 and 220 so as to vertically move the first and second processing vessels 210 and 220 and the spin head 110. The relative vertical position between the first and second processing vessels 210 and 220 may be changed by vertically moving the spin head 110.

On the other hand, the outer side of the container unit 200, the polishing unit 300, the first and second processing fluid supply unit 400, 500, the brush unit 600, the aerosol unit 700, and the pad The conditioning unit 800 is installed.

The polishing unit 300 polishes the surface of the wafer 70 fixed to the substrate support unit 100 by a chemical mechanical method to planarize the surface of the wafer 70. A detailed description of the configuration of the polishing unit 300 will be described in detail with reference to FIGS. 5 to 13.

The first and second processing fluid supply units 400 and 500 inject processing fluids necessary for the polishing and cleaning processes of the wafer 70 to the wafer 70 fixed to the substrate support unit 100. The first processing fluid supply unit 400 is installed to face the polishing unit 300 with the container unit 200 therebetween, and is fixedly installed on the sidewall 221 of the second processing container 220. . In the polishing process or the cleaning process, the first processing fluid supply unit 400 cleans the wafer 70 by spraying the processing fluid onto the wafer 70 fixed to the spin head 110. The first processing fluid supply unit 400 may include a plurality of injection nozzles fixed on an upper side of the sidewall 221 of the second processing container 220, and each injection nozzle may be processed toward the center portion of the wafer 70. Inject fluid. The processing fluid injected from the injection nozzle may be a processing liquid for cleaning or drying the wafer 70, or may be a drying gas for drying.

In one example of the present invention, the first processing fluid supply unit 400 has four injection nozzles, but the number of the injection nozzles increases or decreases depending on the number of types of the processing fluid used for cleaning the wafer 70. You may.

The second processing fluid supply unit 500 is installed to face the polishing unit 300 with the container unit 200 and the first processing fluid supply unit 400 interposed therebetween. The second processing fluid supply unit 500 includes a chemical liquid nozzle for injecting a processing liquid, and in the cleaning process, the processing liquid is injected onto the wafer 70 fixed to the spin head 110 to thereby spray the wafer 70. Clean. The second processing fluid supply unit 500 may swing, and injects the processing liquid in a state in which the chemical liquid nozzle is disposed on the spin head 110 through a swing operation during the cleaning process.

The brush unit 600 physically removes foreign matter on the surface of the wafer 70 after the polishing process. The brush unit 600 includes a brush pad that contacts the surface of the wafer 70 to physically wipe off the foreign matter on the surface of the wafer 70, and is swingable. During the cleaning process, the brush unit 600 rotates the brush pad in a state in which the brush pad is disposed on the upper portion of the spin head 110 through a swinging motion, and the wafer 70 is fixed to the spin head 110. )).

The aerosol unit 700 is disposed on one side of the brush unit 600. The aerosol unit 700 removes foreign substances on the surface of the wafer 70 by spraying the processing liquid in the form of fine particles on the wafer 70 fixed to the spin head 110. In one example of the present invention, the aerosol unit 700 sprays the treatment liquid in the form of small particles using ultrasonic waves. The brush unit 600 is used to remove foreign particles of relatively large particles, and the aerosol unit 700 is used to remove foreign particles of relatively small particles compared to the brush unit 600.

Meanwhile, the pad conditioning unit 800 cleans and regenerates the polishing unit 300 when the polishing unit 300 is standing by at a home port. A detailed description of the configuration of the pad conditioning unit 800 will be described in detail later with reference to FIG. 14.

As described above, in the substrate polishing system 2000, since both the polishing process and the cleaning process of the wafer 70 are performed at each substrate polishing unit 1000, it is necessary to transfer the wafer to the cleaning process chamber after the polishing process. There is no need for a separate cleaning process chamber. Accordingly, the substrate polishing system 2000 may shorten the transfer time and the process time of the wafer 70, improve productivity, and reduce the footprint.

Hereinafter, the configuration of the polishing unit 300 will be described in detail with reference to the drawings.

FIG. 5 is a perspective view illustrating the polishing unit illustrated in FIG. 3, FIG. 6 is a partially exploded perspective view of the polishing unit illustrated in FIG. 5, and FIG. 7 is a partially exploded perspective view illustrating the rear surface of the polishing unit illustrated in FIG. 5. FIG. 8 is a partial cutaway side view of the polishing unit shown in FIG. 5. FIG.

4 and 5, the polishing unit 300 may include a pressing part 310, a fluid supply part 320, a swing part 330, and a driving part 340.

Specifically, the pressing unit 310 is disposed on the wafer 70 fixed to the spin head 110 during the polishing process. The pressing unit 310 rotates in contact with the wafer 70 while spraying a chemical liquid for polishing the wafer 70 to polish the wafer 70. The fluid supply part 320 is provided above the pressing part 310. The fluid supply unit 320 provides the chemical liquid to the pressing unit 310, and receives the rotational force from the driving unit 340 through the rotating unit 330 to rotate together with the pressing unit 310. Detailed descriptions of the configuration of the pressing unit 310 and the fluid supply unit 320 will be described later with reference to FIGS. 9 to 16.

6 to 8, the rotation part 330 is installed on the fluid supply part 320. The rotating part 330 may include a rod-shaped rotating case 331 and a belt-pull assembly 335 which transmits the rotational force from the driving part 340 to the fluid supply part 320. One side of the rotary case 331 is coupled to the fluid supply unit 320, the other side is coupled to the drive unit 340.

The driving unit 340 adjusts vertical positions of the first driving motor 341 for rotating the rotating unit 330, the second driving motor 342 for rotating the fluid supply unit 320, and the pressing unit 310. It may include a vertical moving unit 343.

The first driving motor 341 is coupled to the rotation case 331, and provides a rotational force to the rotation case 331. The first driving motor 341 may repeatedly provide rotational power in a clockwise direction and rotational force in a counterclockwise direction alternately. Accordingly, the rotating part 330 swings by the driving part 340 with a portion coupled to the driving part 340 as a central axis. During the polishing process, the pressing unit 310 may horizontally reciprocate in an arc shape on the upper portion of the wafer 70 by the swinging operation of the rotating unit 330.

The second driving motor 342 is installed under the first driving motor 341. The second drive motor 342 provides a rotational force to the belt-pulley assembly 335, and the belt-pulley assembly 335 transmits the rotational force of the second drive motor 342 to the fluid supply unit 320. to provide. The belt-pulley assembly 335 may be embedded in the rotation case 331 and include a driving pulley 332, a driven pulley 333, and a belt 334. The driving pulley 332 is installed on an upper portion of the first driving motor 341, and is coupled to one side of the vertical arm 344 passing through the first driving motor 341. The second driving motor 342 is coupled to the other side of the vertical arm 344.

The driven pulley 333 is disposed to face the driving pulley 332 and is installed on the fluid supply part 320 to be coupled to the fluid supply part 320. The driving pulley 332 and the driven pulley 333 are connected to each other through the belt 334, and the belt 334 is wound around the driving pulley 332 and the driven pulley 333.

The rotational force of the second drive motor 342 is transmitted to the drive pulley 332 through the vertical arm 344, whereby the drive pulley 332 rotates. The rotational force of the driving pulley 332 is transmitted to the driven pulley 333 through the belt 334, and thus, the driven pulley 333 rotates. The rotational force of the driven pulley 333 is transmitted to the fluid supply part 320, and thus, the pressing part 310 and the fluid supply part 320 rotate.

The vertical moving part 343 is installed behind the first driving motor 341 and the second driving motor 342. The vertical moving part 343 may include a ball screw 343a, a nut 343b, and a third drive motor 343c. The ball screw 343a has a rod shape and is installed perpendicular to the ground. The nut 343b is fitted to the ball screw 343a and is fixed to the second drive motor 342. The third driving motor 343c is installed under the ball screw 343a. The third driving motor 343c may be coupled to the ball screw 343a and may provide a clockwise rotational force and a counterclockwise rotational force to the ballstream 343a. The ball screw 343a is rotated clockwise or counterclockwise by the third drive motor 343c. The nut 343b moves up and down along the ball screw 343a by the rotation of the ball screw 343a. Accordingly, the second driving motor 342 coupled to the nut 343b is connected to the nut (343b). 343b) to move up and down. The first driving motor 341 and the rotating part 330 are moved up and down by the vertical movement of the second driving motor 342, so that the fluid supply part 320 and the pressing part 310 are also moved up and down. do.

In this embodiment, the vertical moving part 343 is provided with a ball screw 343a, a nut 343b and a third drive motor 343c to provide vertical movement force in a linear motor manner, but with a cylinder It may also provide vertical movement force.

Meanwhile, the swing driver 341, the spin driver 342, the ball screw 343a, the nut 343b, and the vertical arm 344 are embedded in the drive case 345, and the drive case 345 is It has a long rod shape in the vertical direction.

Hereinafter, the pressurizing part 310 and the fluid supply part 320 will be described in detail with reference to the accompanying drawings.

9 is an enlarged perspective view illustrating the pressurizing unit and the fluid supply unit illustrated in FIG. 5, and FIG. 10 is a longitudinal cross-sectional view illustrating the pressurization unit and the fluid supply unit illustrated in FIG. 9.

5, 9, and 10, the fluid supply unit 320 provides a chemical liquid for polishing a wafer to the pressing unit 310, and rotates by the rotational force provided from the driving unit 340 to pressurize the pressing unit 310. Rotate the part 310.

In detail, the fluid supply part 320 includes a housing 321, a rotation shaft 322, first and second bearings 323a and 323b, a fixed shaft 324, and first and second chemical tubes 326a and 326b. , An air injection pipe 327, and first and second rotary lip seals 328a and 328b.

The housing 321 has a generally cylindrical tubular shape, and an upper end is inserted into the rotating case 331 of the rotating part 330 to be coupled to the rotating case 331, and a lower end thereof is coupled to the pressing part 310. do.

The rotating shaft 322 is provided in the housing 321 and is spaced apart from the housing 321. The rotating shaft 322 is formed of a hollow tube extending in the longitudinal direction of the housing 321. The upper end of the rotating shaft 322 is inserted into the driven pulley 333 of the rotating part 330 to engage with the driven pulley 333, the rotating shaft 322 is rotated by the rotation of the driven pulley 333. . The lower end of the rotating shaft 322 is coupled to the pressing portion 310, the pressing portion 310 is rotated by the rotation of the rotating shaft 322. That is, the rotational force of the second drive motor 342 (see Fig. 6) is the vertical arm 344 (see Fig. 8)-> drive pulley 332-> belt 334-> driven pulley 333-> The rotary shaft 322 is transferred in order of the pressing unit 310 so that the pressing unit 310 rotates based on the center of gravity.

The first and second bearings 323a and 323b are interposed between the housing 321 and the rotation shaft 322. The first and second bearings 323a and 323b connect the housing 321 and the rotation shaft 322 and support the rotation shaft 322 so that the rotation shaft 322 rotates stably. The first bearing 323a is located adjacent to the rotating part 330, and the second bearing 323b is located adjacent to the pressing part 310. The inner rings of the first and second bearings 323a and 323b are fitted to the rotation shaft 322 to rotate together with the rotation shaft 322, and the outer rings are coupled to the housing 321 to rotate when the rotation shaft 322 is rotated. I never do that. Therefore, only the rotation shaft 322 rotates, and the housing 321 does not rotate.

The fixed shaft 324 is installed in the rotation shaft 322. The fixed shaft 324 is made of a hollow tube extending in the same direction as the rotating shaft 332. The fixed shaft 324 is spaced apart from the rotating shaft 322 and does not rotate when the rotating shaft 332 rotates. The upper end of the fixed shaft 324 is inserted into the rotary case 331, coupled to the first shaft bracket 325a fixed to the rotary case 331 so that the fixed shaft 324 is the rotary case 331 It is fixed to). The lower end of the fixed shaft 324 is inserted into the pressing portion 310, and is coupled to the second shaft bracket 325b installed in the pressing portion 310 so that the fixed shaft 324 is the pressing portion 310 Is fixed to.

The first and second chemical liquid tubes 326a and 326b are installed in the fixed shaft 324. The first and second chemical liquid tubes 326a and 326b extend in the same direction as the fixed shaft 324 in the fixed shaft 324 and are disposed in parallel to each other. The first and second chemical liquid tubes 326a and 326b provide a transfer flow path of the chemical liquid used in the polishing process, and an output end for discharging the chemical liquid is located in the pressing unit 310.

An input end of the first chemical tube 326a is connected to a first chemical supply line 83a, and the first chemical supply line 83a supplies a first chemical solution CL1 used to polish a wafer. It is connected to the chemical liquid supply part 81. The first chemical liquid tube 326a receives the first chemical liquid CL1 from the first chemical liquid supply part 81 through the first chemical liquid supply line 83a.

An input end of the second chemical tube 326b is connected to a second chemical liquid supply line 83b, and the second chemical liquid supply line 83b supplies a second chemical liquid CL2 used to polish the wafer. It is connected to the chemical liquid supply part 82. The second chemical liquid tube 326b receives the second chemical liquid CL2 from the second chemical liquid supply part 82 through the second chemical liquid supply line 83b.

In this embodiment, the first and second chemical liquids CL1 and CL2 may be different kinds of chemical liquids, or may be the same chemical liquid. Examples of the chemical liquids CL1 and CL2 discharged from the first and second chemical liquid tubes 326a and 326b include a slurry for polishing a wafer.

In an example of the present invention, the first and second chemical liquid tubes 326a and 326b are connected to the first and second chemical liquid supply lines 83a and 83b respectively installed through the rotating case 331.

On the other hand, the air injection pipe 327 is installed on the upper end of the housing 321. The air injection pipe 327 is connected to the pad pressure control unit 900, and receives air from the pad pressure control unit 900. In one example of the present invention, the air injection pipe 327 is located inside the rotary case 331.

The air injection pipe 327 communicates with the first air flow path AFP1 formed in the housing 321, and the air injected into the air injection pipe 327 flows into the first air flow path AFP1. The first air flow path AFP1 is formed inside the wall of the housing 321 and extends along the longitudinal direction of the housing 321 from an upper end of the housing 321. An output end of the first air flow path AFP1 communicates with a second air flow path AFP2 formed between the housing 321 and the rotation shaft 322, and the air provided to the first air flow path AFP1 is formed in the first air flow path AFP1. 2 flows into the air flow path AFP2.

The second air flow path AFP2 is defined by the first and second rotary lip seals 328a and 328b. The first and second rotary lip seals 328a and 328b are interposed between the housing 321 and the rotation shaft 322 and seal a space between the housing 321 and the rotation shaft 322. The first and second rotary lip seals 328a and 328b face each other and have a ring shape. The first rotary lip seal 328a is positioned below the first bearing 323a and adjacent to the first bearing 323a. The second rotary lip seal 328b is installed below the first rotary lip seal 328a and is spaced apart from the first rotary lip seal 328a. A space in which the first rotary lip seal 328a and the second rotary lip seal 328b are spaced apart from each other is provided to the second air flow path AFP2, and the second air flow path AFP2 moves the rotation shaft 322. Surround.

The second air flow path AFP2 communicates with a third air flow path AFP3 formed in the wall of the rotation shaft 322, and the air provided to the second air flow path AFP2 is connected to the third air flow path AFP3. Inflow. The third air flow path AFP3 extends from a point connected with the second air flow path AFP2 in the longitudinal direction of the rotation shaft 322 to a lower end of the rotation shaft 322. The air injected from the pad pressure controller 900 passes through the air inlet tube 327-> first air flow path AFP1-> second air flow path AFP2-> third air flow path AFP3. By the pressing unit 310 is provided.

The pressing unit 310 is installed below the fluid supply unit 320, and the pressing unit 310 rotates while pressing the surface of the wafer to polish the surface of the wafer. In the polishing process, the pressure at which the pressing unit 310 pressurizes the wafer is controlled by the pressure of air introduced into the pressing unit 310 through the third air flow path AFP3.

Hereinafter, the pressing unit 310 will be described in detail with reference to the accompanying drawings.

FIG. 11 is a partially exploded perspective view illustrating the pressing unit illustrated in FIG. 9, and FIG. 12 is a plan view illustrating the polishing pad illustrated in FIG. 11.

9 to 11, the pressing unit 310 may include a polishing pad 311, a polishing body 312, a pad holder 313, a plurality of clamp members 314, a coupling plate 315, and a bellows ( 316, cover 317, and chemical liquid nozzle 318.

The polishing pad 311 has a plate shape, has a generally circular ring shape, and is detachably coupled to the polishing body 312. The polishing pad 311 is rotated while the lower surface is in contact with the upper surface of the wafer during the polishing process to polish the wafer.

The polishing pad 311 has a diameter smaller than the diameter of the wafer, and polishes the wafer while swinging by the driving unit 340 during the polishing process. As such, since the polishing pad 311 has a smaller size than the wafer, the polishing unit 300 may locally polish the wafer and prevent over-polishing in a specific region.

The polishing body 312 is provided on the polishing pad 311. The polishing body 312 has a generally circular ring shape and is coupled to the fixed shaft 324 of the fluid supply part 320. Specifically, the polishing body 312 may include a polishing housing 312a, a lower plate 312b and an upper plate 312c.

The polishing housing 312a has a generally cylindrical shape, and the lower plate 312b is installed at a lower portion thereof. The lower plate 312b has a generally circular ring shape and has the same size as the polishing pad 311. The lower plate 312b is coupled to the lower portion of the polishing housing 312a to seal the lower portion of the polishing housing 312a.

The polishing pad 311 is installed below the lower plate 312b. The pad holder 313 is interposed between the polishing pad 311 and the lower plate 312b, and the pad holder 313 fixes the polishing pad 311 to the polishing body 312.

In detail, the lower surface of the pad holder 313 is fixedly coupled to the upper surface of the polishing pad 311, and the upper surface of the pad holder 313 is detachably coupled to the lower plate 312b by the plurality of clamp members 314.

In this embodiment, the pressing portion 310 is provided with four clamp members 314, the number of the clamp member 314 may be increased or decreased depending on the size of the polishing pad 311.

Each clamp member 314 is interposed between the lower plate 312b and the pad holder 313 to fix and couple the pad holder 313 to the lower plate 312b using a magnetic force.

Specifically, the clamp member 314 includes a magnet 314a, a clamp plate 314b, and a screw 314c. The magnet 314a is interposed between the clamp plate 314b and the lower plate 312b and has a generally circular ring shape. In one example of the present invention, the clamp member 314 has one magnet 314a having a ring shape, but the number of the magnets 314ba is the size of the clamp member 314 and the magnet 314a. The size of the magnet 314a may be increased in various forms.

The clamp plate 314b is installed to face the lower plate 312b. In one example of the present invention, the clamp plate 314b has a substantially rectangular plate shape, but the shape of the clamp plate 314b may have various shapes without being limited thereto.

The clamp plate 314b is coupled to the lower plate 312b using the screw 314c. Since the clamp plate 314b is made of a metal material having no magnetic material, for example, aluminum, it does not react to the magnet 312a. The clamp plate 314, whereas the pad holder 313 is made of a material having a magnetic material, such as stainless steel or carbon steel, the lower plate by the magnetic force of the magnet 312a Coupled to 312b.

As described above, since the clamp member 314 fixes the pad holder 313 to the lower plate 312b by using a magnetic force, it is easy to detach the pad holder 313 to the lower plate 312b. . In particular, since the polishing pad 311 is a consumable, periodic replacement is necessary. Therefore, the process of fixing the pad holder 313 to the lower plate 312b and the process of separating from the lower plate 312b frequently occur. Since the pressing unit 310 is coupled to the pad holder 313 and the lower plate 312b by the magnetic force of the clamp member 314, it is possible to shorten the time required to replace the polishing pad 311. have. Accordingly, the pressing unit 310 may shorten the process waiting time and improve productivity.

In addition, the pad holder 313 may include a plurality of coupling protrusions 313a protruding from the top surface. The coupling protrusions 313a are respectively inserted into the plurality of coupling grooves AG formed on the lower surface of the lower plate 312b. The engaging protrusions 313a align the polishing pad 311 and the lower plate 312b, and the polishing pad 311 and the pad holder 313 rotate together with the lower plate 312b during the polishing process. The locking jaw function with respect to the rotation direction of the pressing unit 310 to function. Accordingly, the pad holder 313 may prevent the rotational force from the lower plate 313b from being transmitted to the polishing pad 311 due to friction between the polishing pad 311 and the wafer during the polishing process. .

In addition, the pressing portion 310 may provide a jig groove (JH) to facilitate the separation between the pad holder 313 and the lower plate (312b). The jig groove JH extends from the bottom end of the bottom plate 312b to the outside surface and is located on the outer surface of the bottom plate 312b, and the pad holder 313 and the bottom plate 312b are in contact with each other. Formed on the part.

Hereinafter, a process of replacing the polishing pad 311 will be described in detail with reference to the accompanying drawings.

FIG. 13 is a partially exploded perspective view illustrating a state in which the pad holder and the lower plate illustrated in FIG. 12 are separated.

9 and 13, first, a jig (not shown) is inserted into the jig groove JH, and then one end not inserted into the jig groove JH is raised or lowered. At this time, the other end of the jig inserted into the jig groove (JH) is moved in the opposite direction, the jig serves as a lever function to separate the pad holder 313 from the lower plate (312b).

The polishing pad 311 is separated and replaced together with the pad holder 313, and is assembled to the lower plate 312b while being coupled to the pad holder 313.

In one example of the present invention, the clamp plate 314b is formed with an insertion groove into which the magnet 314a is partially inserted into a portion where the magnet 314a is disposed. In addition, an insertion groove into which the magnet 314a and the clamp plate 314b are inserted is formed at a portion of the lower plate 312b to which the flange member 314 is coupled.

On the other hand, the lower plate 312b is coupled to the upper plate 312c. The upper plate 312c is disposed above the lower plate 312b and disposed to face the lower plate 312b. The upper plate 312c is installed in the polishing housing 312a to seal an upper portion of the polishing housing 312b and has a generally circular ring shape.

The upper plate 312c is fixedly coupled to the coupling plate 315 provided on the upper surface. The coupling plate 351 is coupled to the rotation shaft 322 of the fluid supply unit 320 and rotates together with the rotation shaft 322. Accordingly, the entire pressing unit 310 is rotated. The coupling plate 351 has a generally circular plate shape, and a fourth air flow path AFP through which air discharged from the rotation shaft 322 flows is formed therein. The fourth air flow path AFP communicates with the third air flow path AFP3 of the rotation shaft 322, and air is introduced through the third air flow path AFP3. Air introduced into the fourth air flow path APF4 is injected into the bellows 316.

The bellows 316 is installed in a space in which the lower plate 312b and the upper plate 312c are spaced apart from each other in the polishing housing 312a and are made of a metal material. The bellows 316 is stretchable in the vertical direction by the pressure of air provided from the fourth air flow path AFP4. The bellows 316 may be elongated so that the polishing pad 311 closely adheres to the wafer during the polishing process. When the polishing process is performed while the polishing pad 311 is closely adhered to the wafer, the polishing of the wafer is uniformly efficient. It can proceed to.

Hereinafter, a process of pressing the wafer by the polishing pad 311 will be described in detail with reference to FIGS. 13 to 15.

FIG. 13 is a longitudinal cross-sectional view illustrating a case in which the pressing unit shown in FIG. 10 is in a standby state, and FIGS. 14 and 15 are longitudinal cross-sectional views illustrating a pressing unit of FIG. 10 when polishing a wafer.

10 and 13, the pressing unit 310 is disposed on the wafer 70 and waits for the polishing process. In the air, the bellows 316 is contracted by the vacuum pressure provided from the pad pressure control unit 900. Accordingly, the lower plate 312b moves toward the upper plate 312c, and the polishing pad 311 is spaced apart from the wafer 70. The upper plate 312c is provided with an internal stopper 312d for adjusting the contraction degree of the bellows 316. The inner stopper 312d protrudes from the lower surface of the upper plate 312c and contacts the lower plate 312b when the bellows 316 contracts. The stopper 312d prevents the lower plate 312b from moving upwards by more than an appropriate distance when the bellows 316 is contracted so that the gap between the lower plate 312b and the upper plate 312c is less than or equal to an appropriate interval. Prevent narrowing.

10 and 14, in the polishing process, air is injected into the air injection pipe 327 from the pad pressure adjusting unit 900, and air injected into the air injection pipe 327 is the first air. To the bellows 316 through the fourth air flow paths AFP1, AFP2, AFP3, and AFP4 sequentially. The bellows 316 is relaxed by the pressure of the injected air, thereby increasing the length BD1 when the length BD2 of the bellows 316 contracts. The polishing pad 311 is in contact with the wafer 70 by the relaxation of the bellows 316, and the pressing unit 310 is in a state in which the polishing pad 311 is in contact with the wafer 70. The wafer 70 is polished by rotating about the central axis of the polishing pad 311.

10 and 15, since the pressing pad 310 presses the wafer 10 by the bellows 316, tilting of the polishing pad 311 is possible. . Since the wafer 70 includes a plurality of patterned thin films, the top surface may not be formed flat. In the polishing process, the polishing pad 311 may be tilted by the bellows 316, thereby improving adhesion to the surface of the wafer 70. In one example of the present invention, the tilting angle TA of the polishing pad 311 is about ± 1 degree.

The pressure for pressing the wafer 70 is adjusted according to the pressure of the air injected into the bellows 316 of the polishing pad 311. The air pressure of the bellows 316 is adjusted by the pad pressure adjusting unit 900, and the process of adjusting the air pressure will be described later in the description of the configuration of the pad pressure adjusting unit 900.

On the other hand, the cover 317 is installed on the upper portion of the polishing body 312 to cover the upper portion of the polishing body 312. The cover 317 is coupled to the upper end of the polishing housing 312a, and a space for accommodating the coupling plate 315 is provided therein. An opening 317a is formed in the central portion of the cover 317, and a portion of the coupling plate 315 protrudes outwardly through the opening 317a to engage with the rotation shaft 322. The surface defining the opening 317a is spaced apart from the coupling plate 315 inserted into the opening 317a for tilting the polishing pad 311.

Lower ends of the fixed shaft 324 and the first and second chemical tubes 326a and 326b are inserted into holes formed in the central portions of the coupling plate 317, the upper plate 312c and the lower plate 312b, respectively. do. The second shaft bracket 325b is interposed between the upper plate 312c and the fixed shaft 324. The second shaft bracket 325b is coupled to the upper plate 312c and fixedly coupled to the lower end of the fixed shaft 324 to fix the fixed shaft 324 to the upper plate 312c. The second shaft bracket 325b is coupled to the upper plate 312c by using a bearing (not shown), whereby the upper plate 312c is rotatably coupled to the second shaft bracket 325b. do.

9 and 10, the fixed shaft 324 and the first and second chemical liquid tubes 326a and 326b inserted into the pressing part 310 are coupled to the chemical liquid nozzle 318. . The chemical liquid nozzle 318 is inserted into a hole formed in the center of the pad holder 313 and is coupled to the pad holder 313. The input end of the chemical liquid nozzle 318 is coupled to the fixed shaft 324 and the first and second chemical liquid tubes 326a and 326b, and communicates with the output ends of the first and second chemical liquid tubes 326a and 326b. do. The output end of the chemical nozzle 318 is exposed to the outside through the pad hole 311a formed at the center of the polishing pad 311, and is provided from the first and second chemical tube 326a, 326b during the polishing process. The first and second chemical liquids CL1 and CL2 are sprayed. In one embodiment of the present invention, the chemical liquid nozzle 318 is a flow path through which the first chemical liquid CL1 provided from the first chemical liquid tube 326a flows and the second chemical liquid CL2 provided from the second chemical liquid tube 326b. These flow paths are formed separately from each other.

The chemical liquids CL1 and CL2 injected from the chemical liquid nozzle 318 are injected onto the wafer 70 through the pad hole 311. The polishing pad 311 is formed with a diffusion channel 311b for diffusing the chemical liquids CL1 and CL2 separated from the chemical liquid nozzle 318. The diffusion passage 311b is formed on a lower surface of the polishing pad 311 in contact with the wafer during the polishing process, and has a groove shape formed by partially removing the lower surface of the polishing pad 311. The diffusion passage 311b communicates with the pad hole 311a, whereby the chemical liquids CL1 and CL2 injected from the center portion of the polishing pad 311 pass along the diffusion passage 311b. 311) to the end side.

As shown in FIG. 12, the diffusion passage 311b may be formed in a lattice shape when viewed in plan view, but the shape of the diffusion passage 311b may be changed into various shapes.

As described above, since the polishing pad 311 includes the diffusion passage 311b at a lower surface thereof, the chemical pads CL1 and CL2 injected from the center portion of the polishing pad 311 are polished at the polishing pad 311. It can diffuse quickly to the end side of the. Accordingly, during the polishing process, the polishing unit 300 may uniformly spread the chemical liquids CL1 and CL2 on the entire lower surface of the polishing pad 311, and the polishing pad 311 and the wafer may have the chemical liquid. It may be in close contact with (CL1, CL2) to reduce the back pressure formed between the polishing pad 311 and the wafer. This improves the efficiency of the polishing process and the yield of the product.

In the polishing process, the fixed shaft 324, the first and second chemical tubes 326a and 326b, and the chemical nozzle 318 do not rotate, and the polishing pad 311 and the pad holder 313 do not rotate. Rotate. As described above, since the pad holder 313 rotates while the chemical liquid nozzle 318 is fixed, the chemical liquids CL1 and CL2 ejected from the chemical liquid nozzle 318 are separated from the pad holder 313 and the chemical liquid nozzle. It can be introduced into the gap between 318 to generate foreign matter. Since the foreign matter generated between the pad holder 313 and the chemical nozzle 318 may fall on the wafer 70 during the polishing process, it may cause poor polishing and contamination of the wafer 70.

In order to prevent this, the pressing unit 310 may further include an O-ring 319 interposed between the chemical nozzle 318 and the pad holder 313. The O-ring 319 surrounds the chemical liquid nozzle 318 and prevents the chemical liquids CL1 and CL2 injected from the chemical liquid nozzle 318 from flowing into the pressurizing part 310. Since the O-ring 319 is prone to wear due to the friction caused by the rotation of the pad holder 313, it should be replaced periodically. The o-ring 319 may be replaced with the replacement of the polishing pad 311.

Meanwhile, the polishing unit 300 further includes a rinse member 350 that prevents the first and second chemical liquids CL1 and CL2 injected onto the wafer 70 from being cured on the wafer 70 during the polishing process. can do.

9 and 10, the rinse member 350 is installed at one side of the fluid supply part 320, and sprays a rinse liquid RL such as ultrapure water or pure water onto the wafer during the polishing process to the wafer 70. The injected first and second chemical liquids CL1 and CL2 are prevented from curing.

Specifically, the rinsing member 350 may include first and second rinse nozzles 351 and 352 and a connection pipe 353 connected to an input terminal of the first and second rinse nozzles 351 and 352. . The connection pipe 353 is connected to the rinse supply line 85, and the rinse supply line 85 is connected to the rinse liquid supply unit 84. The rinse liquid supply unit 84 discharges the rinse liquid RL to the rinse supply line 85, and the rinse supply line 85 provides the rinse liquid RL to the connection pipe 353. . The connection pipe 353 provides the rinse liquid RL to the first and second rinse nozzles 351 and 352, and the first and second rinse nozzles 351 and 352 are rinsed on the wafer. Spray the liquid RL.

As described above, the polishing unit 300 includes the rinsing member 350 which injects the rinse liquid RL onto the wafer, whereby the first and second chemical liquids CL1, which are injected into the wafer during the polishing process. To prevent hardening of CL2). Particularly, in the case of the high speed polishing process in which the rotational speed of the polishing pad 311 rises to about 800 RPM, the slurry sprayed on the wafer for the polishing process forms a thinner film than the low speed polishing process. The slurry on the wafer is easy to cure. On the other hand, in the low speed polishing process, the slurry sprayed on the wafer during the polishing process may accumulate on the edge portion of the wafer, and the slurry may be cured in a band shape on the edge portion of the wafer.

In order to prevent hardening of the slurry, the rinse member 350 sprays the rinse liquid RL onto the wafer while the polishing pad 311 rotates to polish the wafer. Accordingly, the polishing unit 300 may prevent contamination of the wafer and polishing failure due to slurry hardening, and thus may improve the yield of the product.

In this embodiment, the rinse member 350 includes two rinse nozzles 351 and 352, but the number of the rinse nozzles 351 and 352 is a process efficiency and the injection amount of the rinse nozzles 351 and 352. It may increase or decrease depending on.

The rinse member 350 is fixed to one side of the fluid supply part 320 by a fixing bracket 360. That is, the top surface of the fixing bracket 360 is fixedly coupled to the rotating part 330, and the rinsing member 350 is fixedly coupled to the side of the fixing bracket 360.

Referring again to FIGS. 5 and 10, the pressure at which the polishing unit 300 pressurizes the wafer is controlled by the pad pressure adjusting unit 900. The pad pressure regulator 900 may include an air provider 910, a main line 920, a regulator 930, an electro-pneumatic regulator 940, a first valve 950, and a pressure gauge. 960, a vacuum member 970, a sub line 980, and a second valve 990.

In detail, the air providing unit 910 discharges air to be provided to the bellows 316 of the pressing unit 310 to the main line 920. The main line 920 has an input terminal connected to the air supply unit 910 and an output terminal connected to the air injection pipe 327. The main line 920 provides air injected from the air supply unit 910 to the air injection pipe 327 during the polishing process. Accordingly, the bellows 316 is relaxed. In addition, the main line 920 provides a vacuum pressure supplied from the vacuum member 970 to the air inlet tube 327 when the polishing unit 300 is in standby. Accordingly, the bellows 316 is contracted.

The regulator 930, the electric regulator 940, the first valve 950, and the pressure gauge 960 are sequentially installed on the main line 920. The regulator 930 reduces the pressure of the air provided from the air supply unit 910 to the main line 920 to an appropriate pressure. The air decompressed by the regulator 930 moves to the electric regulator 940. The electric regulator 940 automatically adjusts the pressure of the air decompressed by the regulator 930 to a preset pressure during the polishing process. Air in the main line 920 is moved to the first valve 950 via the electro-pneumatic regulator 940. The first valve 950 supplies and blocks air injected into the main line 920 to the air injection pipe 327 through an on / off operation. The pressure gauge 960 is installed between the first valve 950 and the air injection pipe 327 to measure the final pressure of air provided to the air injection pipe 327.

The pad pressure adjusting unit 900 controls the final pressure of the air provided to the air injection pipe 327 to adjust the pressure of the polishing unit 300 to pressurize the wafer. That is, the polishing unit 300 is the pressure of the air injected into the bellows 316 according to the final pressure of the air provided from the pad pressure control unit 900 is adjusted, the bellows 316 of the internal air The degree of relaxation depends on the pressure. That is, the higher the pressure of the air injected into the bellows 316, the more the bellows 316 is relaxed, and accordingly, the pressure at which the polishing pad 311 pressurizes the wafer increases. On the other hand, the lower the pressure of the air injected into the bellows 316, the less the bellows 316 is relaxed, and thus, the pressure at which the polishing pad 311 pressurizes the wafer decreases.

In particular, the pad pressure adjusting unit 900 adjusts the final pressure of the air according to the horizontal position of the polishing pad 311 on the wafer during the polishing process. That is, the electric regulator 940 is electrically connected to the controller 60, and the controller 60 controls the electric regulator 940 so that the final pressure of the air is the polishing pad 311 on the wafer. According to the horizontal position of), adjust it to be equal to the reference pressure set corresponding to the corresponding position. The controller 60 divides the wafer into a plurality of adjustment sections, and sets an appropriate reference pressure for each adjustment section.

As described above, the pad pressure controller 900 adjusts the final pressure of the discharged air by the controller 60 for each adjustment section of the wafer. As a result, the pressure at which the polishing pad 311 pressurizes the wafer is adjusted for each adjustment section of the wafer. Accordingly, the polishing unit 300 may prevent over-polishing in a specific region of the wafer and uniformly polish the wafer.

In addition, the controller 60 may be electrically connected to the pressure gauge 960. The pressure gauge outputs the final air pressure value of the main line 920 and provides it to the controller 60. The controller 60 may be configured based on a pressure value currently measured by the pressure gauge 900 and a reference pressure value corresponding to a point at which the polishing pad 311 is currently positioned on the wafer when the final pressure of the air is adjusted. The pressure of the polishing pad 311 is adjusted to be equal to the reference pressure.

As such, the control unit 60 adjusts the final pneumatic pressure of the main line 920 based on the pressure value measured by the pressure gauge 960, so that the pressurized pressure of the polishing unit 300 during the polishing process is currently polished. The pad 311 can be accurately adjusted to be equal to the reference pressure of the adjustment section in which the pad 311 is located.

The main line 920 is connected to the sub line 980. The sub line 980 is connected to the vacuum member 970 that provides a vacuum pressure, and is connected between a point where the pressure gauge 960 is connected on the main line 920 and a point where the first valve 950 is installed. Connected. The sub line 980 provides a vacuum pressure provided from the vacuum member 970 to the fluid supply part 320 through the main line 920. The vacuum pressure provided from the pad pressure adjusting unit 900 is provided to the bellows 316 through the air injection pipe 327 and the first to third air flow paths AFP1, AFP2, and AFP3. The bellows 316 is lowered in the internal pressure by the vacuum pressure provided from the pad pressure adjuster 900, as a result, the bellows 316 is contracted.

The sub line 980 is provided with a second valve 990 for controlling whether the vacuum pressure provided to the air injection pipe 327 is blocked and supplied.

On the other hand, a predetermined polishing pattern is formed on the surface of the polishing pad 311 in contact with the wafer to improve the efficiency of the polishing process. The polishing pattern is gradually worn out by friction with the wafer in the process of polishing the wafer, and the chemical liquids used in the polishing process may be cured in the polishing pattern. The pad conditioning unit 800 (see FIG. 2) regenerates the polishing pad 311 by polishing the surface of the polishing pad 311.

Hereinafter, the pad conditioning unit will be described in detail with reference to the accompanying drawings.

17 is a perspective view of the pad conditioning unit shown in FIG. 3.

Referring to FIG. 17, the pad conditioning unit 800 may include a treatment tank 810, first and second diamond disks 820 and 830, a cleaning nozzle 840, and a plurality of wet nozzles 850. have.

Specifically, the treatment tank 810 has a cylindrical shape with an open top, and the pressing portion 310 (see FIG. 5) of the polishing unit 300 is accommodated therein during the regeneration process of the polishing pad 311. do.

The first and second diamond disks 820 and 830 are installed in the treatment tank 810. The first and second diamond disks 820 and 830 are installed on the disk support 860 provided on the bottom surface of the treatment tank 810. The first and second diamond disks 820 and 830 are arranged side by side in the horizontal direction, and in contact with the surface of the polishing pad 311 in the regeneration process to polish the surface of the polishing pad 311.

In an example of the present invention, the first and second diamond disks 820 and 830 each have a circular ring shape, and each has a diameter smaller than that of the polishing pad 311. In addition, as an example of the present invention, each of the diamond disks 820 and 830 may be formed by depositing, adhering, or electrodepositing diamond on a ceramic material, a metal material, or a resin material.

 When the polishing unit 310 finishes the polishing process, the pressing unit 310 is accommodated in the treatment tank 810 and the polishing unit 310 waits for the regeneration process of the polishing pad 311. It is done when it is in a state. During the regeneration process, the polishing pad 311 is rotated in contact with the first and second diamond disks 820 and 830, so that the surface of the polishing pad 311 is first and second. It is polished by two diamond disks 820 and 830.

In this embodiment, the pad conditioning unit 800 comprises two diamond disks 820, 830, but the number of diamond disks 820, 830 is the size of each diamond disk 820, 830 and the It may increase or decrease depending on the size of the polishing pad 311.

On the other hand, the cleaning nozzle 840 is installed on one side of the disk support 840, and is located adjacent to the first and second diamond disks (820, 830). When the polishing nozzle 840 finishes polishing the polishing pad 311 by the first and second second diamond disks 820 and 830, the cleaning nozzle 840 sprays a cleaning solution onto the surface of the polishing pad 311 to perform the polishing. The polishing pad 311 is cleaned. In particular, since a polishing pattern is formed on the surface of the polishing pad 311, foreign matter may remain in the polishing pattern, and such foreign matter is difficult to remove due to positional conditions.

The cleaning nozzle 840 applies a physical force to the surface of the polishing pad 311 by spraying the cleaning liquid at a high pressure to effectively remove such foreign matter. In one example of the present invention, the cleaning nozzle 840 may spray the cleaning liquid at a pressure of about 0.01 MPa to about 0.5 MPa, and ultrapure water may be used as the cleaning liquid.

The plurality of wet nozzles 851, 852, 853, and 854 are provided on an inner wall of the treatment tank 810. In this embodiment, the pad conditioning unit 800 has four wet nozzles 851, 852, 853, 854, but the number of wet nozzles 851, 852, 853, 854 depends on process efficiency. It may increase or decrease.

The four wet nozzles 851, 852, 853, and 854 are respectively provided on two sidewalls of the treatment tank 810 facing each other. The wet nozzles 851, 852, 853, and 854 may spray a rinse liquid onto the polishing pad 311 before polishing the polishing pad 311, such that a chemical liquid, for example, a slurry, remains on the polishing pad 311. Remove it.

In addition, the wet nozzles 851, 852, 853, and 854 continue to spray the rinse liquid during the regeneration process of the polishing pad 311 to keep the treatment tank 810 in a wet state. Accordingly, the pad conditioning unit 300 prevents the slurry remaining in the polishing pad 311 from curing during the regeneration process of the polishing pad 311.

As described above, the pad conditioning unit 800 is provided separately from the polishing unit 300 to perform a regeneration process on the polishing pad 311 in the standby state. That is, the regeneration process of the polishing pad 311 is performed separately from the polishing process of the wafer. As a result, the substrate polishing unit 1000 may prevent the diamond chips from the polishing pad 311 from falling on the wafer in the regeneration process, thereby preventing the polishing failure of the wafer.

Hereinafter, a process of polishing the wafer by the substrate polishing unit 1000 will be described in detail with reference to the accompanying drawings.

18 is a flowchart illustrating a substrate polishing method according to an embodiment of the present invention, FIG. 19 is a perspective view illustrating an operating state in which the polishing unit illustrated in FIG. 4 polishes a wafer, and FIGS. 20A and 20B are illustrated in FIG. 19. It is a top view which shows an example in which the illustrated polishing pad grinds a wafer.

3, 18, and 19, first, the main transfer robot 50 (see FIG. 1) pulls out the wafer 70 from the buffer unit 30 to spin head 110 of substrate support member 100. The wafer 70 is seated on the wafer, and the lifting unit 260 lifts the first and second processing containers 210 and 220 to position the spin head 10 in the first processing container 210. (Step S110).

Subsequently, the driving unit 340 of the polishing unit 300 positions the pressing unit 310 adjacent to the wafer 70 on the wafer 70 (step S120).

The polishing unit 300 sprays the first and second chemical liquids CL1 and CL2 onto the wafer 70, and simultaneously polishes the polishing pad 311 of the pressing unit 310 to the surface of the wafer 70. In step S130, the wafer 70 is polished by rotating about the central axis of the polishing pad 311 in a state of contacting the substrate. In the polishing process, the polishing pad 311 swings simultaneously with the rotation, and the first and second chemical liquids CL1 and CL2 are sprayed from the chemical liquid nozzle 318 of the pressurizing part 310.

The first and second chemical liquids CL1 and CL2 injected from the chemical liquid nozzle 318 may be disposed along the diffusion channel 311b (see FIG. 12) formed on the lower surface of the polishing pad 311. Diffuses from the pad hole 311a (see FIG. 12) to the end side of the polishing pad 311. The first and second chemical liquids CL1 and CL2 diffused to the end side of the polishing pad 311 leak out of the polishing pad 311. As described above, the first and second chemical liquids CL1 and CL2 are diffused along the diffusion passage 311b to the entire area of the polishing pad 311 during the polishing process, so that the polishing unit 300 improves the process efficiency. In addition, the cost of the first and second chemical liquids CL1 and CL2 may be reduced.

In this embodiment, the substrate polishing unit 1000 polishes the wafer 70 while the polishing unit 300 sprays the first and second chemical liquids CL1 and CL2. However, the polishing unit 300 does not spray the first and second chemical liquids CL1 and CL2, but separate chemical liquid spraying units, for example, the first processing liquid supply unit 400 (see FIG. 3), or The first and second chemical liquids CL1 and CL2 for polishing the wafer 70 may be sprayed from the second processing liquid supply unit 500 (see FIG. 3).

In the polishing process, the polishing pad 311 may rotate in the same direction as the wafer 70 or may rotate in different directions. For example, as shown in FIG. 20A, both the polishing pad 311 and the wafer 70 may rotate clockwise. On the other hand, as shown in FIG. 20B, the polishing pad 311 may rotate counterclockwise, and the wafer 70 may rotate clockwise.

While the polishing pad 311 polishes the wafer 70, the controller 60 controls the substrate support unit 100, the polishing unit 300, and the pad pressure adjusting unit 900 to control the wafer 70. At least one of the polishing variables PV1, PV2, PV3, and PV4 that can adjust the amount of polishing of the wafer 70 is adjusted for each adjustment period VS of the wafer 70. As a result, the substrate polishing unit 1000 polishes the wafer 70 while adjusting the polishing amount for each adjustment section of the wafer 70.

While the pressing unit 310 rotates to spray the chemical liquids CL1 and CL2 to polish the wafer 70, the rinse member 350 may spray the rinse liquid onto the wafer 70. have. Accordingly, the polishing unit 300 may prevent hardening of the chemical liquids CL1 and CL2 injected into the wafer 70 during the polishing process, and simultaneously polish and clean the wafer 70.

When the polishing process by the polishing unit 300 is completed, the wafer 70 is cleaned (step S140).

Briefly looking at the process of cleaning the wafer 70 as follows. First, the brush unit 600 physically wipes the upper surface of the wafer 70. In this case, the spin head 110 is located in the first processing container 210. Thereafter, the elevating unit 260 lowers the first and second processing containers 210 and 220 to move the wafer 70 into the upper portion of the first processing container 210 in the second processing container 220. Place it in Subsequently, the first processing fluid supply unit 400 or the second processing fluid supply unit 500 sprays the processing liquid onto the wafer 70 to clean the wafer 70. Subsequently, the aerosol unit 500 injects a processing fluid onto the wafer 70 to remove foreign substances remaining on the wafer 70.

Subsequently, the wafer 70 is rinsed and dried. A rinse liquid and a drying fluid for rinsing the wafer 70 may be injected from any one of the first and second processing fluid supply units 400 and 500.

As described above, since the substrate polishing unit 1000 performs the polishing process and the cleaning process of the wafer 70 in one container unit 200 sequentially, the transfer time and the process time of the wafer 70 are shortened. And productivity can be improved.

In addition, the substrate polishing unit 1000 may be formed in a processing container in which the polishing process and the brush process of the wafer 70 are different from the cleaning process of the wafer 70 using a fluid. Accordingly, the substrate polishing unit 1000 may separate and recover the processing liquid used in the polishing process and the processing liquid used in the cleaning process.

When the cleaning process is completed, the main transfer robot 50 (see FIG. 1) unloads the wafer 70 on the spin head 110 and loads it into the buffer unit 30 (see FIG. 1) (step 1). S150). The index robot 20 (see FIG. 1) pulls out the wafer 70 processed in the substrate polishing unit 1000 from the buffer unit 30 and loosens the loaded / unloading unit 10 (see FIG. 1). 12a, 12b, 12c, and 12d (see Fig. 1). After the polishing and cleaning processes are completed, the wafers are transferred to the outside in units of the pulls 12a, 12b, 12c, and 12d.

Hereinafter, a process of polishing the wafer by adjusting the value of the polishing parameter for each of the adjustment sections will be described in detail.

The polishing variables PV1, PV2, PV3, PV4 are made up of the first to fourth polishing variables PV1, PV2, PV3, PV4. The first polishing variable PV1 is a pressure at which the polishing pad 311 presses the wafer, and the second polishing variable PV2 is a rotation speed at which the polishing pad 311 rotates about a central axis. The polishing variable PV3 is the rotational speed of the spin head 110, and the fourth polishing variable 330 is the swing speed of the rotational unit PV4.

The polishing amount of the wafer 70 can be changed according to the value of each polishing variable PV1, PV2, PV3, PV4, and only one polishing variable of the polishing variables PV1, PV2, PV3, PV4 is adjusted. Even if you can change it.

The controller 60 divides the radius of the wafer 70 into a plurality of preset adjustment sections. In this embodiment, the adjustment intervals are made of the same distance, but may be made of different distances.

In the polishing process, the control unit 60 controls at least one of the polishing parameters to adjust the value of each of the polishing parameters PV1, PV2, PV3, PV4 to adjust the polishing amount of the wafer 70. Select a variable. The selected polishing parameter is set to appropriate reference values for each adjustment section for uniform polishing of the wafer 70. Therefore, the reference values of the selected polishing variable may be set to different values according to the corresponding adjustment section.

During the polishing process, the controller 60 adjusts the value of the polishing variable so that the selected polishing variable has the same value as the reference value corresponding to the adjustment section in which the polishing pad 311 is currently located. As such, since the substrate polishing unit 1000 adjusts a value of a specific polishing parameter according to the adjustment section of the wafer 70, the substrate polishing unit 1000 may locally adjust the polishing amount of the wafer 70.

Hereinafter, the correlation between the polishing variables PV1, PV2, PV3, PV4 and the polishing amount of the wafer 70 will be described in detail.

10 and 19, the first polishing variable PV1 represents a pressure value at which the polishing pad 311 presses the wafer 70. The value of the first polishing variable PV1 is adjusted according to the internal pressure of the bellows 316 provided in the pressing unit 310, and the internal pressure of the bellows 316 is adjusted to the pad pressure adjusting unit 900. Is adjusted according to the final air pressure. That is, as the pressure of the air discharged from the pad pressure adjusting unit 900 increases, the air pressure in the bellows 316 increases, and thus, the value of the first polishing variable PV1, that is, the polishing The pressure at which the pad 311 presses the wafer 70 increases. When the pressing pressure PV1 of the polishing pad 311 increases, the polishing amount increases.

The controller 60 controls the electric regulator 940 of the pad pressure controller 900 so that a value of the first polishing variable PV1 is equal to a reference value corresponding to a control section in which the polishing pad 311 is currently located. 5). Accordingly, the final air pressure of the pad pressure adjusting unit 900 is adjusted for each of the adjusting sections, and as a result, the pressurizing pressure PV1 of the polishing pad 311 is adjusted. The controller 60 controls the final air pressure of the pad pressure controller 900, and the current pad pressure controller 900 measured by the pressure gauge 960 (see FIG. 5) of the pad pressure controller 900. The degree of adjustment of the maximum air pressure is determined based on the final air pressure of.

21 is a graph showing the polishing uniformity of a wafer according to the pressure at which the polishing unit presses the wafer.

19 and 21, when the polishing pad 311 polishes the wafer 70 at a constant pressurization pressure, the first graph G1 is a graph showing the polishing amount of the wafer for each adjustment section. The second graph G2 is a graph showing the polishing amount of the wafer for each adjustment section when the polishing pad 311 polishes the wafer 70 at a predetermined pressure pressure for each adjustment section.

Looking at comparing the first graph G1 and the second graph G2, the adjusting section is more adjusted than the case where the polishing pad 311 polishes the entire area of the wafer 70 with the same pressure (G1). In the case where the wafer 70 is polished while adjusting the pressurization pressure (G2), the polishing amount is uniformly distributed.

That is, when the substrate polishing unit 1000 polishes the wafer 70 by adjusting the pressurizing pressure for each adjustment section, the polishing uniformity is improved. Accordingly, the substrate polishing unit 1000 may improve the yield and polishing efficiency of the product, and may variously polish the wafer 10 as necessary.

On the other hand, the controller 60 may adjust the polishing amount for each adjustment section by using the second polishing variable PV2. The second polishing variable PV2 indicates a speed at which the polishing pad 311 rotates about a magnetic center axis, that is, a spin speed of the polishing pad 311, and a spin speed PV2 of the polishing pad 311. As) increases, the polishing amount increases. The spin speed PV2 of the polishing pad 311 is controlled by the second driving motor 342 of the polishing unit 300, and the controller 60 controls the rotation speed of the second driving motor 342. By controlling, the spin speed PV2 of the polishing pad 311 is adjusted for each adjustment section.

The third polishing variable PV3 represents the rotational speed of the wafer 70, that is, the rotational speed of the spin head 110, and is polished as the rotational speed PV3 of the spin head 110 increases. The amount increases. The rotation speed PV3 of the spin head 110 is controlled by the support shaft 120 supporting the spin head 110. The controller 60 controls the rotation speed of the support shaft 120 to adjust the rotation speed PV3 of the spin head 110 for each adjustment section.

The fourth polishing variable PV4 represents the speed at which the polishing pad 311 swings on the wafer 70, and the polishing amount increases as the swing speed PV4 of the polishing pad 311 increases. The swing speed PV4 of the polishing pad 311 is controlled by the speed at which the rotating part 330 of the polishing unit 300 swings, and the swing speed of the rotating part 330 is controlled by the polishing unit 300. It is controlled by one drive motor 341 (see FIG. 6). The controller 60 controls the rotation speed of the first driving motor 341 to adjust the swing speed PV4 of the polishing pad 311 for each adjustment section.

In one example of the present invention, the polishing pad 311 swings between an end portion and a center point of the wafer 70.

In this embodiment, the controller 60 adjusts the polishing amount for each adjustment section by adjusting only one polishing parameter of the first to fourth polishing variables PV1, PV2, PV3, and PV4. However, the controller 60 combines at least two or more polishing variables among the first to fourth polishing variables PV1, PV2, PV3, and PV4 to adjust the polishing amount for each adjustment section. It can also be adjusted for each adjustment section.

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 is a view schematically showing a sheet type polishing system according to an embodiment of the present invention.

FIG. 2 is a side view showing the sheet type polishing system shown in FIG. 1.

3 is a perspective view illustrating the substrate polishing unit illustrated in FIG. 1.

4 is a partial cutaway perspective view specifically showing the substrate support unit and the processing container shown in FIG. 3.

FIG. 5 is a perspective view illustrating the polishing unit illustrated in FIG. 3.

FIG. 6 is a partially exploded perspective view of the polishing unit shown in FIG. 5.

FIG. 7 is a partially exploded perspective view illustrating the rear surface of the polishing unit illustrated in FIG. 5.

FIG. 8 is a partial cutaway side view of the polishing unit shown in FIG. 5. FIG.

9 is an enlarged perspective view illustrating the pressurizing unit and the fluid supply unit illustrated in FIG. 5.

FIG. 10 is a longitudinal cross-sectional view illustrating the pressurizing unit and the fluid supply unit illustrated in FIG. 9.

FIG. 11 is a partially exploded perspective view illustrating the pressing unit illustrated in FIG. 9.

12 is a plan view of the polishing pad illustrated in FIG. 11.

FIG. 13 is a partially exploded perspective view illustrating a state in which the pad holder and the lower plate illustrated in FIG. 12 are separated.

FIG. 14 is a longitudinal cross-sectional view illustrating a case where the pressurization unit shown in FIG. 10 is in a standby state.

15 and 16 are longitudinal cross-sectional views showing when the pressing portion shown in FIG. 10 polishes the wafer.

17 is a perspective view of the pad conditioning unit shown in FIG. 3.

18 is a flowchart illustrating a substrate polishing method according to an embodiment of the present invention.

19 is a perspective view illustrating an operating state in which the polishing unit illustrated in FIG. 3 polishes a wafer.

20A and 20B are plan views illustrating an example in which the polishing pad illustrated in FIG. 19 polishes a wafer.

21 is a graph showing the polishing uniformity of a wafer according to the pressure at which the polishing unit presses the wafer.

Explanation of symbols on the main parts of the drawings

100 substrate support member 200 container unit

300: polishing unit 400: first processing liquid supply unit

500: second processing liquid supply unit 600: brush unit

700: aerosol unit 800: pad conditioning unit

1000: substrate polishing part

Claims (16)

A rotatable pressurizing portion formed on a surface of which a diffusion flow passage for polishing the substrate while injecting the polishing chemical from the upper portion of the substrate, the diffusion passage for diffusing the polishing chemical from the central portion to the end side in contact with the substrate; And And a fluid supply unit coupled to an upper portion of the pressing unit, transmitting a rotational force to the pressing unit, and providing the polishing chemical liquid to the pressing unit. The method of claim 1, wherein the pressing unit, A chemical liquid nozzle which receives the polishing chemical from the fluid supply part and sprays the chemical liquid onto the substrate; And And a polishing pad disposed at an upper portion of the substrate to polish the substrate, and having a pad hole at a central portion thereof to expose the chemical nozzle to the outside, and having a diffusion channel formed at a lower surface thereof. 3. The polishing unit according to claim 2, wherein the diffusion passage is in communication with the pad hole and is made of a groove. The polishing unit according to claim 3, wherein the diffusion passage has a lattice structure in plan view. The method of claim 2, wherein the pressing unit, A polishing body installed on an upper portion of the polishing pad, and coupled to the chemical liquid nozzle at a lower portion thereof; A pad holder coupled to the polishing pad, interposed between the polishing pad and the polishing body, and detachably coupled to the polishing body; And And at least one clamp member interposed between the pad holder and the polishing body to couple the pad holder to the polishing body using a magnetic force. The method of claim 5, The pad holder provides a hole into which the chemical liquid nozzle is fitted, The pressing unit may further include an O-ring interposed between the chemical liquid nozzle and the pad holder to prevent the polishing chemical liquid injected from the chemical liquid nozzle from flowing into the polishing body. The method of claim 6, wherein the clamp member, At least one magnet installed on a lower surface of the polishing body; And And a clamp plate facing the polishing body with the magnet therebetween, the clamp plate being coupled to the polishing body to fix the magnet to the polishing body. The polishing unit of claim 7, wherein the clamp plate is made of a material that does not respond to magnetic force, and the pad holder is made of a material that responds to magnetic force. The polishing unit according to claim 7, wherein the polishing body has a jig groove formed in an outer wall, and the jig groove is located at a portion where the upper surface of the pad holder and the polishing body are in contact with each other. The method of claim 7, wherein The pad holder further includes a coupling protrusion protruding from the top surface, The polishing body is a polishing unit, characterized in that to provide an alignment groove into which the engaging projection is inserted. The polishing unit according to any one of claims 1 to 10, wherein the polishing pad has a size smaller than that of the substrate. A substrate support member on which a substrate is mounted and which rotates the substrate; And A polishing unit for polishing a substrate seated on the substrate support member, The polishing unit, A rotatable pressing portion formed on a surface in which a diffusion flow passage for polishing the substrate while injecting the polishing chemical liquid from the upper part of the substrate seated on the substrate support member and in contact with the substrate has a diffusion passage for diffusing the polishing chemical liquid from the center portion to the end portion; And And a fluid supply unit coupled to an upper portion of the pressing unit, transmitting a rotational force to the pressing unit, and providing the polishing chemical liquid to the pressing unit. The method of claim 12, wherein the pressing unit, A chemical liquid nozzle which receives the polishing chemical from the fluid supply part and sprays the chemical liquid onto the substrate; And And a polishing pad disposed at an upper portion of the substrate to polish the substrate, and having a pad hole at the center thereof to expose the chemical nozzle to the outside, and having a diffusion pad formed at a lower surface thereof. The substrate polishing apparatus according to claim 13, wherein the diffusion passage communicates with the pad hole and is formed of a groove. Mounting the substrate on the substrate support member; Disposing a pressing unit of the polishing unit on an upper surface of the substrate; And Rotating the pressing unit while pressing the substrate while simultaneously spraying the polishing chemical onto the substrate, and polishing the substrate; And the polishing chemical is injected from the lower surface of the pressing portion, and diffuses from the central portion of the pressing portion to the end side of the pressing portion along a diffusion channel formed on the lower portion of the pressing portion. The method of claim 15, wherein the diffusion passage is provided in a groove shape.

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