KR20030069888A - Apparatus and method for laminating substrate - Google Patents

Abstract

In removing the vacuum in the chamber 2, the opening and closing degree of the valve 8a continuous to the vacuum pump 82 is controlled, so that the suction resistance of the pipe 81 changes from large to small. It controls and suppresses the flow of the exhaust stream at the start of vacuum removal. In addition, in the operation (vacuum breakdown) of returning to atmospheric pressure in the chamber 2, the inlet resistance of the gas flowing into the chamber 2 is changed from the large to the small by the control of the return valve 9a, and the vacuum is destroyed. Reduction of the amount of gas flowing into the original chamber 2 is aimed at. As a result, the flow of airflow in the chamber 2 can be alleviated in releasing the vacuum and also in vacuum breakdown, so that dust and dust are scattered in the chamber 2 and adhered to the substrate, thereby deteriorating its electrical characteristics. It is possible to avoid a problem and to produce a high quality attached substrate with high yield.

Description

Board bonding apparatus and board bonding method {APPARATUS AND METHOD FOR LAMINATING SUBSTRATE}

TECHNICAL FIELD This invention relates to the improvement of the suitable board | substrate bonding apparatus and board | substrate bonding method employ | adopted for manufacture of a liquid crystal display panel.

Generally, the liquid crystal display panel employ | adopted for displays, such as a personal computer, a TV receiver, or various monitors, is manufactured by bonding through the adhesive apply | coated so that a pair of glass substrates which oppose may surround the display surface.

The liquid crystal display panel is formed by encapsulating liquid crystal on the display surface between the bonded substrates, and there are a liquid crystal injection method and a liquid crystal dropping method for encapsulating the liquid crystal on the display surface. In either of the encapsulation methods of the liquid crystal, a large number of spacers are scattered or provided on one of the substrate surfaces so that the gap (cell gap) between the substrates in which the liquid crystal is enclosed is constant. Is attached.

Fig. 1 is a partially cutaway sectional view showing a conventional substrate bonding apparatus employed in the manufacture of a liquid crystal display panel by a liquid crystal dropping method.

As shown in FIG. 1, the glass substrates 1a and 1b of a pair of upper and lower rectangular shapes are in the chamber 2 which consists of upper and lower chambers 2a and 2b, and the upper substrate 1a is the upper stage ( The lower substrate 1b, which is supported by a supporting means such as a chuck on the lower surface of 3a, and on which the liquid crystal 4 is dropped on the other display surface, is coated with a sealing agent 5 which is an adhesive so as to surround the lower substrate 1b. The upper surface of 3b) is similarly supported by supporting means such as a chuck. Reference numeral 5a denotes a spacer scattered on the display surface.

The upper stage 3a is connected to and supported by the support shaft 6a of the moving mechanism 6, is moved and adjusted in the XY-θ direction by the moving mechanism 6, and is vertically vertical in the XY-θ direction (arrow Z After moving in the direction of ()) and positioning the upper substrate 1a to the lower substrate 1b facing each other, it is configured to press to overlap both substrates la and 1b.

The lower stage 3b is fixed in the lower chamber 2b, and the lower chamber 2b is provided with imaging cameras 71 and 72 for positioning the upper and lower substrates 1a and 1b.

The imaging cameras 7l and 72 photograph the positioning marks (alignment marks) formed on both substrates 1a and 1b, and supply the image to a controller (not shown), so that the so-called pattern recognition method in the controller is used. The relative position alignment between the upper and lower substrates 1a and 1b by the detection of the used mark position and the drive control of the movement mechanism 6 based on the detected mark position is performed.

In addition, although the drive mechanism is abbreviate | omitted and is not shown in figure, the whole upper chamber 2a is comprised so that it can move up and down, and when the upper chamber 2a descend | falls and it connects with the lower chamber 2b, a closed space is closed. Is formed. Then, a vacuum pump (not shown) is connected through the pipe 21 opened in the chamber 2, and the vacuum in the chamber 2 is able to be removed by exhausting the vacuum pump. Reference numeral 2c denotes an elastic member attached and fixed to the lower end of the upper chamber 2a in order to ensure airtightness at the time of sealing, and reference numeral 22 denotes a conveyance rail for moving the lower chamber 2b.

In manufacture of the liquid crystal display panel which employ | adopted the board | substrate bonding apparatus of the said structure, bonding of the upper and lower board | substrates 1a and 1b is performed in the following procedure (process).

First, the upper substrate 1a is loaded and loaded on the lower stage 3b of the lower chamber 2b, and is sucked and supported by the lower surface of the upper stage 3a. Next, the lower substrate 1b to which the sealing agent 5 has been previously applied so as to surround the liquid crystal 4 on the display surface is adsorbed and supported on the lower stage 3b of the lower chamber 2b.

Next, the upper chamber 2a descends to form a closed space, and the chamber 2 passes through the transition based on the characteristic curve shown in FIG. 2 by the exhaust by the operation of the vacuum pump connected to the pipe 2l. Subtract the vacuum inside. Next, alignment of the upper substrate 1a and the lower substrate 1b in the vacuum atmosphere in the chamber 2 is performed, and the upper stage 3a is lowered to press the upper substrate 1a to the lower substrate 1b. Both substrates la and lb are bonded together through the sealing compound 5.

Finally, after vacuum breakdown in the chamber 2 is performed and returned to atmospheric pressure, the lower stage 3b is passed through the adsorption release from the upper stage 3a of the upper substrate 1a and the upward movement of the upper chamber 2a. Both substrates 1a and 1b glued onto each other are taken out.

As described above, since both substrates 1a and 1b are exposed under atmospheric pressure after being bonded in a vacuum atmosphere, a large surface between the display surface between the substrates 1a and lb in vacuum, that is, between the cell space and the atmospheric pressure outside the substrate In response to the pressure difference between the inside and the outside, both substrates 1a and 1b press the spacers 5a to form gaps (cell gaps) having a precision of microns.

In addition, the sealing agent 5 which adhere | attached both the board | substrates 1a and 1b is hardened after receiving a heating, ultraviolet-ray (UV) irradiation, etc. after bonding.

As described above, in the conventional substrate bonding apparatus employed in the manufacture of a liquid crystal display panel or the like, the upper substrate 1a adsorbed and supported by the upper stage 3a in the chamber 2 in which the closed space is formed is the lower substrate. After positioning with respect to (1b), it sticks with the board | substrate 1b of the lower side through the sealing compound 5 which is an adhesive agent.

At this time, the vacuum is removed by the exhaust operation by the vacuum pump in the chamber 2, and the bonding operation is performed in a vacuum atmosphere.

When the vacuum pump draws out the vacuum in the chamber 2, as shown in Fig. 2, at the beginning of the operation, the air in the chamber 2 is exhausted hard, and the vacuum degree rapidly increases, but the exhaust proceeds and the chamber ( 2) As the air inside becomes gradually thinner and approaches the target vacuum degree L, the progress of the vacuum degree becomes slower.

In the liquid crystal display panel, since adhesion of dust and dirt to the display surface significantly impairs the display characteristics, assembling and manufacturing of substrate bonding and the like is naturally performed in a clean room excluding dust and dirt.

Although high cleanliness is required at the manufacturing site, it is virtually impossible to completely remove dust and dirt contained in the air, and since the substrate pasting device includes a mechanical moving part, dust and the like are newly generated in the mechanism part. Inevitably, the dust and the dust which remain in the chamber cannot be removed.

Here, when the vacuum pump is operated at the bonding of the substrate to withdraw the vacuum in the chamber 2, the abrupt exhaust operation at the start of the vacuum pump operation disturbs the air flow in the chamber 2, which is in the lower chamber 2b. There is a fear that dust and dirt that have stayed are blown off and adhered to the display surface of the lower substrate 1b.

In addition, adhesion of dust and dirt to the substrate after being bonded also sometimes degrades the electrical characteristics of the substrate. There is a fear that a return gas stream scatters dust and dirt in the chamber 2 and adheres to the electrode surface upon vacuum breakdown after the vacuum in the chamber 2 adheres, and may inhibit electrical conduction between the connected IC and the like. have.

Therefore, in recent years, even when very high-definition display screens are required, even very small dust and dirt in the chamber are scattered by the airflow generated during vacuum evacuation or vacuum breakdown, and are adhered to the display surface or the electrode portion to lower the manufacturing yield. Improvement was desired.

Therefore, the present invention aims to provide a substrate bonding apparatus and a substrate bonding method which can avoid dust and dust from scattering as much as possible in bonding the upper and lower substrates in a vacuum chamber, and obtain a favorable bonding substrate. do.

Further, another object of the present invention is to prevent the fall of the upper substrate due to the evacuation of the air in the chamber.

In order to solve the above problems, a first aspect of the present invention is a substrate pasting device for pasting two substrates in a hermetically sealed chamber, comprising: a pump connected to the chamber and evacuating the chamber; And a control means for controlling a valve of the pipe connecting the pump and the chamber, and changing the suction resistance of the pipe.

As described above, according to the first aspect of the present invention, since the control means controls the valve of the pipe connecting the pump and the chamber, and changes the suction resistance of the pipe, abrupt vacuum evacuation is alleviated, and dust and dust are scattered. It can be suppressed.

According to a second aspect of the present invention, there is provided a substrate bonding apparatus for bonding two substrates in a hermetically sealed chamber, the pump being connected to the chamber, and releasing a vacuum from the chamber, and the two substrates are fitted. And a control means for controlling the return valve continuous to the return opening opened in the chamber, and changing the inflow resistance of the gas flowing into the chamber from large to small. It is done.

Thus, according to the 2nd viewpoint of this invention, in the return operation to atmospheric pressure in a chamber after affixing a board | substrate, since the inflow resistance of the gas which flows in into a chamber changes from a stand to a small by control of a return valve, The inside of the chamber is gradually returned toward the atmospheric pressure, and dust and dirt in the chamber can be reduced.

According to a third aspect of the present invention, there is provided a substrate bonding method for bonding two substrates in a hermetically sealed chamber, comprising: a first step of opposing and arranging a pair of substrates in the chamber at an interval; and after the first step And a second step of starting the vacuum releasing in the chamber by operating the pump connected to the chamber with a predetermined suction resistance, and after a predetermined time after the start of vacuum releasing by the second process or the pressure in the chamber is a predetermined pressure. A third step of controlling the valve of the pipe connecting the pump and the chamber so that the suction resistance of the pipe becomes smaller when the pipe is reached; and the two sheets arranged oppositely in the chamber after the third step. A fourth step of adhering the substrates of the substrate and a return valve which is continuous to the return opening opened in the chamber after the fourth step, and gas is introduced into the chamber under a predetermined inflow resistance. It characterized in that the pressure chamber comprises a fifth step of, after the second step 5, fit attached substrate of the two operating to transition toward the atmospheric pressure in the sixth step of withdrawing from the chamber.

Thus, according to the 3rd viewpoint of this invention, after the predetermined time after removing the vacuum by a 2nd process, the valve of the pipe which connected the pump and the chamber is changed so that the suction resistance of a pipe may become small, and the initial exhaust flow volume will be changed. Since it controls so that it may become small, it can suppress that the dust and dust in a chamber scatter like a 1st invention, and can reduce adhesion of a board | substrate to the display surface.

According to a fourth aspect of the present invention, there is provided a substrate joining device for pasting two substrates in a hermetically sealed chamber, the pump being connected to the chamber and releasing vacuum in the chamber, and the suction of the pump. And control means for changing the capability.

As described above, according to the fourth aspect of the present invention, there is a control means for changing the suction capacity of the pump for releasing the vacuum in the air in the chamber, and the control means changes the suction capacity of the pump. Sudden vacuum removal can be alleviated and dust and dust can be suppressed from scattering.

Moreover, according to the 5th viewpoint of this invention, in the board | substrate bonding method which pastes two board | substrates together in a hermetically sealed chamber, the 1st process of opposingly arranged a pair of board | substrate in the said chamber at intervals, and A second step of starting the vacuum releasing of the chamber by operating the pump connected to the chamber with a predetermined suction capacity after the first step, and after a predetermined time after the start of vacuum releasing by this second process or the pressure in the chamber A third step of controlling the pump or a discharge valve of the pump or a valve of a pipe connecting the pump and the chamber so that the suction capacity of the pump becomes larger when a predetermined pressure is reached; and after the third step, The gas is controlled by the fourth step of joining the two substrates arranged in the vacuum chamber to face each other and the return valve which is continuous to the return port opened in the chamber after the fourth step. A fifth step of receiving a predetermined inflow resistance into the chamber and manipulating the atmospheric pressure in the chamber to move toward atmospheric pressure; and a sixth step of drawing out the two substrates bonded after the fifth step in the chamber. Characterized in that made.

As described above, according to the fifth aspect of the present invention, since the suction capacity of the pump is increased after a predetermined time elapses after the vacuum of the second process is removed, the first exhaust flow rate is suppressed small as in the third invention. It is possible to suppress dust and dust from scattering and to reduce adhesion of the substrate to the display surface.

1 is a front view of part of a cutout of a manufacturing apparatus of a liquid crystal display panel employing a conventional substrate bonding apparatus;

FIG. 2 is a graph of vacuum attainment characteristics in a chamber obtained with the apparatus shown in FIG. 1; FIG.

3 is a partially cutaway front view of a manufacturing apparatus of a liquid crystal display panel employing a first embodiment of a substrate bonding apparatus according to the present invention;

Fig. 4 is a graph showing the degree of vacuum attainment characteristics in the chamber obtained with the apparatus shown in Fig. 3;

5 is a gas inlet characteristic curve into a chamber obtained with the apparatus shown in FIG.

6 is a process chart showing a substrate bonding procedure of the apparatus shown in FIG. 3;

FIG. 7 is a process chart showing the procedure from the bonding of the substrate to the removal of the substrate from the chamber in the apparatus shown in FIG. 3;

8 is a configuration diagram showing an apparatus for manufacturing a liquid crystal display panel employing a second embodiment of a substrate bonding apparatus according to the present invention;

9 is a configuration diagram showing an apparatus for manufacturing a liquid crystal display panel employing a third embodiment of a substrate bonding apparatus according to the present invention;

FIG. 10 is a process chart showing a procedure of pasting a substrate in a chamber in the apparatus shown in FIG. 9;

11 is a configuration diagram showing a configuration of a controller provided in the substrate bonding apparatus according to the fourth and fifth embodiments of the present invention;

12 is a flowchart showing pressure control means of a substrate bonding apparatus according to a fourth embodiment of the present invention;

It is a curve of the vacuum degree arrival characteristic in a chamber in the board | substrate bonding apparatus which concerns on 5th Embodiment of this invention.

<Explanation of symbols for the main parts of the drawings>

1a: upper substrate 1b: lower substrate

2 chamber 2a upper chamber

2b: lower chamber 3a: upper stage

3b: lower stage 4: liquid crystal

5: sealing agent (adhesive) 6: moving mechanism

71, 72: imaging camera 8: exhaust mechanism

81, 81A, 81B: Piping 82, 82A, 82B: Vacuum pump (pump)

8a, 8aA, 8aB: Valve 9: Supply mechanism

91, 91A, 91B: Inlet pipe 9a, 9aA, 9aB: Return valve

92, 92A, 92B: pressure source 10: controller (control means)

EMBODIMENT OF THE INVENTION Hereinafter, the board | substrate bonding apparatus and board | substrate bonding method embodiment which concern on this invention are described in detail with reference to FIGS. In addition, in these figures, the same code | symbol is attached | subjected to the structure same as the conventional structure shown in FIG. 1 and FIG. 2, and detailed description is abbreviate | omitted.

FIG. 3 is a partially cutaway cross-sectional view showing a first embodiment of the substrate pasting device of the present invention employed to manufacture a liquid crystal display panel of a liquid crystal dropping method, and FIG. 4 is an apparatus shown in FIG. It is a characteristic curve which shows the degree of vacuum degree degree which changes in a chamber under valve control.

As shown in FIG. 3, the glass substrates 1a and 1b having a pair of upper and lower rectangles are formed in the chamber 2, and the upper substrate 1a is disposed on the lower surface of the upper stage 3a and the lower substrate ( 1b) is supported on the upper surface of the lower stage 3b by suction adsorption or electrostatic adsorption, respectively.

Since the upper stage 3a is connected to and supported by the moving mechanism 6 and is installed to be movable in the vertical direction (z-axis) while being positioned in the XY-θ direction, the upper and lower substrates 1a and 1b are formed in the upper chamber ( In the closed space formed by the connection of 2a) and the lower chamber 2b, after alignment is performed, it is stuck through the sealing agent 5. In addition, the lower stage 3b may be connected to and supported by the moving mechanism 6.

The upper and lower substrates 1a and 1b bonded together in a vacuum atmosphere are carried out through adsorption release at the upper stage 3a of the upper substrate 1a, vacuum breakdown in the chamber 2 and upward movement of the upper chamber 2a. . After both the bonded substrates 1a and 1b are carried out in the chamber 2 or on the conveyance rail 22, the substrates 1a and 1b are heated or heated to the sealing agent 5 to which the both substrates 1a and 1b are bonded. Ultraviolet (UV) irradiation is performed.

In this first embodiment, the exhaust mechanism 8 and the air supply mechanism 9 are connected to the chamber 2 as means for performing exhaust and vacuum breakdown in the chamber 2, and the controller 10 serving as a control means exhausts the exhaust gas. It is comprised so that drive control of the mechanism 8 and the air supply mechanism 9 may be carried out.

The exhaust mechanism 8 consists of the piping 81 opened and connected in the lower chamber 2b which moves on the conveyance rail 22, and the vacuum pump 82 connected to this piping 81, and the vacuum pump 82 ), The discharge valve 8b provided with the valve 8a formed in the pipe 81 and the exhaust pipe of the vacuum pump 82 is configured to be driven and controlled by the controller 10.

In addition, the air supply mechanism 9 is composed of an inlet pipe 91 and a pressure source 92 connected to the inlet pipe 91, and the inlet pipe 91 is a return hole formed in the ceiling wall of the upper chamber 2a. The return valve 9a installed in the inlet pipe 91 is connected to the controller 23 so as to be controlled by the controller 10. In addition, the pressure source 92 is constituted by a pressure tank, and also serves to prevent dew formation caused by a sudden change in pressure during vacuum breakdown, and contains a gas containing an inert gas such as, for example, nitrogen gas.

Moreover, as shown in FIG. 3, the air filter 11 is attached in the upper chamber 2a in which the return opening 23 was formed so that the opening part may be covered. The air filter 11 has the plate part 11a which opposes at intervals with the return opening 23, the gas blown in from the return opening 23 collides with the plate part 11a, and the gas which collided was transversely. It is comprised so that it may flow in a closed space through the net enclosed in the direction.

Therefore, the air filter 11 not only removes dust and dirt mixed with the gas flowing into the chamber 2, but also directly supplies the gas supplied from the return port 23 directly toward the large space in the chamber 2. It forms a kind of louver mechanism which suppresses blowing in and changes the flow direction of gas.

Under the above configuration, the bonded substrates 1a and 1b are drawn out through the process of vacuum withdrawal in the chamber 2, positioning of both substrates 1a and lb, and bonding and vacuum breaking of the chamber 2, but The vacuum subtraction in the chamber 2 and the return operation below the atmospheric pressure due to the vacuum breakdown in the chamber 2 are performed by drive control of the exhaust mechanism 8 and the air supply mechanism 9 by the controller 10.

That is, in the control of the controller 10 for removing the vacuum, first, the discharge valve 8b of the exhaust mechanism 8 is opened while the return valve 9a of the air supply mechanism 9 is closed, and the vacuum pump 82 is operated. At the same time, the valve 8a is controlled so that the suction resistance of the pipe 81 changes from the table to the furnace in two steps, for example, until the desired degree of vacuum is obtained.

That is, as shown in the characteristic curve of the degree of vacuum attainment in the chamber 2 of FIG. 4, the controller 10 performs the control for opening the valve 8a until the time t elapses. (8a) is set to 1/2 opening, for example, and it is controlled to open all after time t passes.

In addition, instead of controlling time as a parameter in this way, pressure (vacuum arrival degree) may be controlled as a parameter. In this case, the pressure detector 24 which detects the pressure in the chamber 2 is provided, the pressure detection value of this pressure detector 24 is combined with the controller 10, and this pressure detection value is the time in FIG. The valve 8a is fully opened at the time point of reaching the vacuum degree equivalent to t).

As a result, the degree of vacuum in the chamber 2 is the gas exhausted through the inside of the pipe 81 by tightening the valve 8a until the time t elapses after starting the operation of opening the valve 8a. The amount is suppressed. Therefore, the discharge amount of the vacuum pump 82 is suppressed by the large suction resistance of the piping 81 from the start of the operation of opening the valve 8a until the time t elapses, and the solid line A is shown in FIG. 4. As indicated, the degree of vacuum in the chamber 2 slowly changes.

In other words, according to the present embodiment, the flow becomes exhausted in the chamber 2 in the process of releasing the vacuum, unlike the transition of the rapid increase in the degree of vacuum in the conventional chamber indicated by the dashed-dotted line B in FIG. 4. It does not become strong, and dust and dust scattering in the chamber 2 are avoided.

When the time t has elapsed, the controller 10 opens all the valves 8a, but since the degree of vacuum in the chamber 2 has advanced considerably at this point, the valves 8a are fully opened and operated at this point. Even if the suction resistance of 81 is controlled to be small, a strong exhaust flow is not formed, and the target vacuum degree L can be reached while preventing dust and dust from scattering in the chamber 2.

After reaching the target vacuum degree L in the chamber 2, the controller 10 closes the valve 8a to stop the operation of the vacuum pump 82. In addition, as shown in FIG. 3, since the piping 81 was opened and connected to the bottom plate of the lower chamber 2b, and was drawn in to the lower side, the air in the chamber 2 sucks in toward the lower side. As a result, it is possible to more effectively suppress dust and dust from scattering during exhaustion.

The controller 10 operates the air supply mechanism 9 after the substrates 1a and 1b are bonded together, and controls the chamber 2 to return to the atmosphere under atmospheric pressure in a vacuum state.

Here, the controller 10 controls the opening of the return valve 9a and supplies a gas such as air containing nitrogen gas or the like into the chamber 2 from the pressure source 92.

At this time, the controller 10 sets and controls the opening degree of the return valve 9a so as to be, for example, 1/4 of the opening degree, and fully opens after a predetermined time T. Accordingly, the inflow resistance of the gas flowing into the chamber 2 from the pressure source 92 varies from the large to the small.

Moreover, you may control pressure as a parameter, without controlling time as a parameter in this way. In this case, the pressure detector 24 which detects the pressure in the chamber 2 is provided, the pressure detection value of this pressure detector 24 is combined with the controller 10, and this pressure detection value reaches | attained the predetermined pressure. Fully open the return valve 9a.

As a result, as indicated by the solid line C in FIG. 5, after the return valve 9a is opened, the gas inflow rate per unit time flowing into the chamber 2 is increased until the time T elapses. By tightening (9a), it changes to a small level p. Since the gas inflow by this small level p continues to time T, the chamber 2 returns to considerable gas pressure, so that the controller 10 completely removes the return valve 9a at the elapsed time T. Even if it is controlled to open, the amount of gas flowing in the inflow pipe 91 does not increase, and the pressure in the chamber 2 reaches the atmospheric pressure, and the pressure difference between the inside and outside disappears, and the balance is shifted.

In this way, the controller 10 controls the return valve 9a so that the inflow resistance flowing into the chamber 2 changes from the large to the small. Therefore, as indicated by the dashed-dotted line D in FIG. 5, the gas inflow rate per unit time is increased to a level P as compared with the case where the gas from the pressure source 92 is introduced into the chamber 2 without any adjustment control. Since it does not reach | attain, it can suppress generation | occurrence | production of the phenomenon which the gas flow which flows in into the chamber 2 at the time of vacuum breakage, and the dust and particle in the chamber 2 scatter.

The bonding procedure of the board | substrates 1a and 1b by the board | substrate bonding apparatus of the said 1st Embodiment is demonstrated below with reference to the flowchart shown in FIG.

FIG. 6 shows a process until the substrates 1a and 1b are bonded together. First, in step 41, a pair of upper and lower substrates 1a and 1b are disposed in the chamber 2 which forms a closed space. .

Next, in step 42, the controller 10 operates the exhaust mechanism 8, adjusts and controls the valve 8a, sets the suction resistance of the pipe 81 to be large, and supplies it to the vacuum pump 82. Vacuum subtraction is started.

Next, the controller 10 determines whether the predetermined time t has elapsed or whether the inside of the chamber has reached a predetermined pressure (step 43), and when the predetermined time t has elapsed or in the chamber has reached a predetermined pressure. In step YES, the controller 10 adjusts and controls the valve 8a, sets the suction resistance of the pipe 81 to be small, and then continues vacuum evacuation by the vacuum pump 82. . Further, in step 43, when it is determined that the predetermined time t has not been reached or that the inside of the chamber 2 has not reached the predetermined pressure (NO), the process returns to step 42 to remove the vacuum under a large suction resistance. Continue.

In step 45, the controller 10 determines whether or not the vacuum degree in the chamber 2 has reached the target vacuum degree L, and determines that the target vacuum degree L has been reached (YES). When it does so, it transfers to step 46 and after the positioning of the opposing board | substrate 1a, 1b is performed, the bonding through an adhesive agent is performed. In step 45, when it is determined that the target vacuum degree L has not been reached or when the inside of the chamber 2 has not reached a predetermined pressure (NO), the process returns to step 44, and vacuum withdrawal continues under a small suction resistance.

Next, a process from vacuum breakdown in the chamber 2 after the two substrates 1a and 1b in the vacuum atmosphere have been bonded to the unloading of the both substrates 1a and 1b will be described below with reference to FIG. 7. .

First, in step 51, the controller 10 controls the return valve 9a, sets the gas from the pressure source 92 to flow into the chamber 2 under a large inflow resistance by tightening, and vacuums the gas. It flows into this missing chamber 2.

Next, in step 52, the controller 10 determines whether the predetermined time T has elapsed or whether the chamber has reached a predetermined pressure, and when the predetermined time T has elapsed or the chamber has reached the predetermined pressure. (YES), the flow advances to step 53, where the controller 10 controls the return valve 9a to adjust the gas to flow into the chamber 2 with a smaller inflow resistance. Here, when it is determined that the predetermined time T has not been reached (NO), the flow returns to step 51, and the gas inflow is continued under the large inflow resistance.

Here, the flow proceeds to step 54, where the controller 10 determines whether or not the chamber 2 has returned to atmospheric pressure, and when it is determined that it has returned to atmospheric pressure (YES), it proceeds to step 55 and the upper substrate 1a. Is released from the upper stage 3a, the upper chamber 2a is moved upward, and both substrates 1a and 1b bonded on the lower stage 3b are carried out by the movement of the lower chamber 2b. In step 54, when it is determined that the inside of the chamber 2 has not returned to atmospheric pressure (NO), the flow returns to step 53, and then the inflow of gas continues.

In addition, according to the first embodiment, since the air filter 11 constituting the louver mechanism is provided in the chamber 2 facing the return port 23, the gas blown in from the return port 23 is an air filter 11. ), The flow direction is changed and diffused, and the gas flow flowing into the chamber 2 is further alleviated, which further reduces dust and dust scattering in the chamber 2.

As described above, according to the first embodiment, the pipe 81 connected to the vacuum pump 82 in removing the vacuum of the chamber 2 executed when the two substrates 1a and 1b are bonded together. Since the suction resistance of is controlled to change from the large to the small, the generation of a strong exhaust flow in the chamber 2 is suppressed, and the dust and the dust which remain in the chamber 2 can be suppressed from scattering.

In addition, according to the first embodiment, in the vacuum breakdown in the chamber 2 after the two substrates 1a and 1b are bonded together, the controller 10 controls the adjustment of the return valve 9a by the controller 10. Since the inflow resistance of the gas flowing into the chamber 2 is controlled from small to small, the generation of strong inflow airflow in the chamber 2 is suppressed, and dust and dust remaining in the chamber 2 are scattered. You can avoid flying.

therefore. Dust and dust are scattered in the chamber 2, which can adhere to the display surface of the substrate, the substrate electrode surface, or the like, thereby avoiding the problem of lowering the display function or electrical characteristics of the substrate.

In releasing the vacuum in the chamber 2 in the first embodiment, the valve 8a provided in one pipe 81 connected to the vacuum pump 82 is controlled to change the suction resistance of the vacuum pump 82. Although a plurality of pipes of different diameters are connected between the vacuum pump 82 and the chamber 2 and the suction resistance as the whole pipe is changed by an opening operation in which the timing of the valves of each pipe is changed. The dust and dirt in the chamber 2 can be prevented from scattering.

Similarly, at the time of vacuum breakdown in the chamber 2, two inflow pipes of different diameters are connected between the pressure source 92 and the chamber 2, and the timing of the return valves provided in the respective pipes is different. By the operation, the inflow resistance flowing into the chamber 2 can be changed, and dust and dirt in the chamber 2 can be suppressed from scattering.

That is, FIG. 8 is a block diagram showing the second embodiment of the substrate bonding apparatus according to the present invention. The exhaust mechanism 8 is connected to the chamber 2 by two pipes 81A and 81B having different diameters. The suction resistance can be changed from the stand to the saw, and the air supply mechanism 9 also connects two inlet pipes 91A and 91B having different diameters to the chamber 2 so that the inlet resistance can change from the stand to the saw. It is configured to.

According to the configuration of the second embodiment shown in FIG. 8, first, in the exhaust mechanism 8, while the vacuum pump 82 is operated, the controller 10 initially reaches the time t until the time t is reached. The valve 8aB of the small diameter pipe 81B is opened, and when time t is reached, the valve 8aA of the large pipe 81A is opened and controlled. At this time, the valve 8aB of the pipe 81B may be closed.

In addition, you may control with pressure as a parameter, without controlling time as a parameter in this way. In this case, the pressure detector 24 which detects the pressure in the chamber 2 is provided, the pressure detection value of this pressure detector 24 is combined with the controller 10, and this pressure detection value is the time in FIG. The valve 8aA is opened when the degree of vacuum attainment equivalent to t) is reached.

As a result, the suction resistance of the vacuum pump 82 changes from the large to the small at the time t, so as to remove the vacuum in the chamber 2 as in the first embodiment, generation of a strong exhaust flow is avoided, A good substrate can be bonded together.

On the other hand, also in the air supply mechanism 9, in the state which connected the pressure source 92, the controller 10 returns the valve | bulb for the return of the inflow pipe 91B with a small diameter, until it reaches the time T initially. When 9aB is opened and the time T is reached, the control which opens the return valve 9aA of 91 A of large inflow pipes is performed. In this case, the return valve 9aB of the inflow pipe 91B may be closed.

Moreover, you may control pressure as a parameter, without controlling time as a parameter in this way. In this case, the pressure detection value of the pressure detector 24 is combined with the controller 10, and when the pressure detection value reaches a predetermined pressure, the return valve 9aA is opened.

As a result, since the inflow resistance of the gas which enters into the chamber 2 on the basis of time T changes from the large to the small, like the first embodiment, in the return operation to the atmospheric pressure in the chamber 2, the chamber 2 It is possible to avoid dust and dirt from adhering to the substrate after adhesion without generating a strong inflow airflow inside the shell.

In addition, in FIG. 8, the structure of the chamber 2 etc. is the same as the structure shown in FIG. 3, and the filter 11 provided in the upper chamber 2a can reduce the momentum of inflow airflow more. .

In addition, in the structure of the said 2nd Embodiment, the procedure (process) from the vacuum in the chamber 2 to the vacuum destruction after affixing a board | substrate is carried out in 1st Embodiment shown in FIG. 6 and FIG. Since the process is the same as that of, the description is omitted.

In each of the first and second embodiments described above, one vacuum pump 82 is connected and configured to control the valves 8a, 8aA, and 8aB so that the suction resistance of the pipe as a whole can be changed from the large to the small. As the exhaust mechanism 8, a plurality of vacuum pumps may be arranged in parallel, and as a whole, the suction capacity of the pump may be changed from small to small.

Fig. 9 is a configuration diagram of the substrate bonding apparatus according to the third embodiment of the present invention, in which the exhaust mechanism 8 has suction capacity (suction per unit time) to two pipes 81A and 81B of the same diameter connected to the chamber 2. Two vacuum pumps 82A and 82B having different amounts of gas (l / min) can be connected to each other.

Here, the controller 10 opens the valve 8aB installed in the pipe 81B to which the vacuum pump 82B having a small suction capacity is connected until the time t reaches, and after the time t elapses, the valve 8aB ) And control to open the valve 8aA provided in the pipe 81A to which the vacuum pump 82A having a large suction capacity is connected. After the time t has elapsed, both the valve 8aA and the valve 8aB may be opened.

In addition, you may control pressure (vacuum arrival degree) as a parameter, without controlling time as a parameter in this way. In this case, a pressure detector 24 for detecting the pressure in the chamber 2 is provided, the pressure detection value of the pressure detector 24 is combined with the controller 10, and this pressure detection value is the time t of FIG. The valve 8aB is closed and the valve 8aA is opened at the time when the degree of vacuum attained at is reached.

Instead of the valves 8aA and 8aB, the discharge valves 8bA and 8bB may be controlled to change the suction capacity of the pump.

Therefore, the exhaust mechanism 8 as a whole, at the boundary of time t, the suction capacity of the pump connected to the chamber 2 is changed from small to small as a result, and a strong exhaust in the process of releasing the vacuum in the chamber 2 is achieved. Airflow is generated, and dust and dirt can be suppressed from scattering in the chamber 2.

In this third embodiment, also in the air supply mechanism 9, two pressure sources 92A and 92B having the same inflow resistance are configured and arranged, and the controller 10 reaches the time T from the start of air supply. During this time, only the return valve 9aB provided in one inflow pipe 91B is opened, and after the time T passes, the return valve 9aA provided in the other inflow pipe 91A is also controlled to open simultaneously.

Moreover, you may control with pressure as a parameter, without controlling time as a parameter in this way. In this case, the pressure detection value of the pressure detector 24 is put into the controller 10, and when the pressure detection value reaches a predetermined pressure, the return valve 9aA and the return valve 9aB are simultaneously closed.

As a result, the inflow resistance of the gas flowing from the pressure source changes from the large to the small in the vacuum of the chamber 2, so that dust and dirt in the vacuum chamber 2 are similar to those of the first and second embodiments. It is possible to suppress the occurrence of the problem of deterioration of electrical characteristics by attaching to the electrode surface of the scattered and bonded substrates. In Fig. 9, reference numerals 8bA and 8bB show discharge valves of the vacuum pumps 82A and 82B, respectively.

In the third embodiment, the steps up to vacuum bonding after the vacuum in the chamber 2 is removed and the substrates are bonded together will be described with reference to FIG. 10.

That is, the steps 81 to 86 shown in FIG. 10 correspond to the respective steps 41 to 46 shown in FIG. The difference from the process shown in FIG. 6 is that the operation is performed to `` extract the vacuum with the suction resistance at step 42 '', whereas the operation is `` extract the vacuum with a pump having a small suction capacity '' at step 82, and further, at step 42, In step 44, the operation of `` extracting the vacuum with a small suction resistance '' is different, whereas in step 84, the operation of `` extracting the vacuum with a pump having a large suction ability '' differs from each other in terms of the purpose and function of releasing the vacuum. Since there is no difference in the flow of the process, detailed description is omitted.

In addition, since the process of vacuum breaking is also common and overlaps with the process of 1st Embodiment shown in FIG. 7 in this 3rd Embodiment process, detailed description is abbreviate | omitted.

Therefore, also in this 3rd Embodiment, since the strong exhaust flow does not generate | occur | produce in the chamber 2 at the time of bleeding off the vacuum of the chamber 2, at the same time avoiding dust and dust scattering as much as possible, and vacuum-breaking Similarly, the occurrence of strong inflow airflow is suppressed, and adhesion of dust and dirt to the substrate electrode surface and the like can be suppressed, and a good bonded substrate can be produced.

In the second and third embodiments, two pipes 81A and 81B, two inlet pipes 91A and 91B, or two vacuum pumps 82A and 82B and two pressure sources 92A and 92B, respectively, Although the arrangement was carried out, these numbers can be set to three or more.

In addition, in the third embodiment, the suction capacity of the single vacuum pump may be changed, and the suction capacity of the pump may be changed from small to small. This can be done, for example, by changing the opening and closing degree of the discharge valves 8bA and 8bB shown in Fig. 9 from small to small, or by changing the rotational speed of the drive motor of the vacuum pump from low to high speed.

Next, 4th Embodiment of this invention is described using FIG. 8, FIG. 11, and FIG.

The controller 10 shown in FIG. 8 includes a storage unit 101, a comparison unit 102, and a control unit 103 as shown in FIG. 11. The storage unit 101 stores the relationship between the elapsed time from the start of vacuum releasing of the chamber 2 and the target value of the pressure in the chamber 2 corresponding to the elapsed time in the form of a graph or correspondence table shown in FIG. 4. Doing. In addition, when the vacuum pump 82 always keeps the valve 8aA and / or valve 8aB open, the curve in which the pressure in the chamber 2 with respect to the elapsed time from the start of vacuum subtraction is indicated by the solid line in FIG. 4. It shall have a suction ability located in the upper side more.

At the start of vacuum subtraction of the chamber 2, as shown in FIG. 12, the pressure detector 24 detects the pressure in the chamber 2 at predetermined time intervals (step 111), and the pressure detection value is controlled by the controller 10. Send to). The comparison unit 102 in the controller 10 compares the pressure detection value with the pressure target value corresponding to the elapsed time when the pressure detector 24 stored in the storage unit 101 detected the pressure (step 112). And if the pressure detection value is below a pressure target value, the valve 8aA and / or the valve 8aB will be opened (step 113, step 114). On the other hand, when the pressure detection value exceeds the pressure target value, the control unit 103 controls to close the valve 8aA and / or the valve 8aB (step 113, step 115). Then, it is determined whether or not the inside of the chamber 2 has reached the predetermined vacuum degree L (step 116). If the predetermined vacuum degree L has not been reached, the process returns to step 112 and the flow is repeated. In addition, when the predetermined vacuum degree L is reached, the flow ends.

The controller 10 can repeat this control and accordingly change the pressure in the chamber 2 to the target value. In addition, as shown in FIG. 5, the air supply mechanism 9 also stores the relationship between the elapsed time from the start of the air supply and the target value of the inflow amount corresponding to the elapsed time, thereby performing the same control to perform the return valve ( Opening and closing control of 9aA, 9aB) is performed.

Such control can be performed in parallel with the control of the second embodiment. That is, while performing the control of the fourth embodiment, the controller 10 executes 116 to 116 above by opening and closing the valve 8aB until the time t is reached, and the time t After reaching, the above steps 113 to 116 are executed by opening and closing the valve 8aA. In addition, the pressure in the chamber 2 is used as a parameter, not time, and control may be performed to perform steps 116 to 116 by opening and closing the valves 8aA and 8aB until the predetermined pressure is reached.

Moreover, also in said 1st or 3rd embodiment. As in the second embodiment, the control in the fourth embodiment can be applied in parallel.

Next, 5th Embodiment of this invention is described using FIG. 8, FIG. 11, FIG. 12, and FIG.

In FIG. 8, when the upper substrate 1a using electrostatic adsorption and vacuum adsorption is adsorbed, the upper stage 3a in the chamber 2 and the upper stage 3a are supported by electrostatic adsorption and vacuum adsorption. There exists a micro space between the upper substrate 1a resulting from the bending of the upper substrate 1a and the thickness difference, and the air is confined in this space. The air in this space is in the pressure range due to conditions such as the holding force of the upper substrate 1a by the electrostatic adsorption and vacuum adsorption, the size of the substrate 1a, etc. during the process of depressurizing the inside of the chamber 2. It was confirmed that it was easy to come out between 1a) and an upper stage. For example, the substrate has a longitudinal dimension of 1500 mm x 1200 mm, a weight of 3 Kg, an electrostatic attraction force of 5 g / cm 2, a negative pressure of 1000 Pa by vacuum adsorption, about 10 between the upper substrate 1a and the upper stage 3a. When there is a gap of 占 퐉, the force that the above-mentioned air presses and widens between the upper stage 3a and the upper substrate 1a while the pressure in the chamber 2 is from atmospheric pressure (about 100,000 Pa) to about 1000 Pa. The force on which the upper substrate 1a is pressed against the upper stage 3a by electrostatic adsorption and vacuum adsorption is more strong, and most of them stay in the space. And when the pressure in the chamber 2 reaches 1000 Pa, the force which air tries to escape rather than the pressing force of a board | substrate by electrostatic adsorption | suction and vacuum adsorption becomes strong, and the escape of air becomes remarkable. And it was confirmed by experiment that the air almost escapes until the pressure in the chamber 2 reaches 400 Pa.

Moreover, when abruptly depressurizing between 1000 Pa and 400 Pa, it is confirmed that the upper board | substrate 1a electrostatically attracted to the upper stage 3a falls. This causes the air trapped between the upper stage 3a and the upper substrate 1a to flow out into the chamber 2 at one time by a sudden depressurization in the pressure range, and the upper stage 3a and the upper substrate 1a at this time. The rapid flow of air trying to escape between the two acts as a great force to separate the upper substrate 1a from the upper stage 3a. It is considered that this force causes the upper substrate 1a to be dropped by the upper stage 3a. When the upper substrate 1a falls, since the lower substrate 1b supported by the lower stage 3b exists in the dropped position, the upper substrate 1a collides with the lower substrate 1b. As a result, the board | substrates 1a and 1b are damaged and it may become a defect.

Here, in the chamber 2, in the pressure range of 1000 Pa to 400 Pa, the valve is controlled so that the ratio of the pressure change becomes smaller compared to other pressure ranges (atmospheric pressure to about 1000 Pa, 400 Pa to about 1 Pa), and the upper stage 3a and Allow air to slowly escape between the upper substrates la. Accordingly, the upper substrate 1a adsorbed to the upper stage 3a by mitigating the flow of air to escape between the upper stage 3a and the upper substrate 1a and releasing the vacuum in the chamber 2 is released. Prevent it from falling.

To this end, in the fifth embodiment, a graph in which the pressure (vacuum arrival degree L) in the chamber 2 as shown in FIG. 13 becomes smaller in proportion to the pressure change than other pressure ranges in the pressure range of 1000 Pa to 400 Pa Alternatively, the correspondence table is stored in the storage unit 101. As in the fourth embodiment, the valve 8aA and / or the valve 8aB is opened and closed in accordance with the flow of FIG. 12, and the pressure in the chamber 2 is controlled in accordance with the graph of FIG. 13.

As a result, the upper substrate 1a adsorbed to the upper stage 3a is relieved by mitigating the flow of air to escape between the upper stage 3a and the upper substrate 1a, and withdrawing the vacuum in the chamber 2. Falling can be prevented.

In addition, said control can be performed in parallel with the control of the said 1st, 2nd, 3rd embodiment.

Moreover, although the range which air remarkably escapes between the upper board | substrate 1a and the upper stage 3a is considered to be between about 1000 Pa and 400 Pa, when the conditions, such as the magnitude | size of an electrostatic attraction force, change, air escapes is remarkable. It is thought that the pressure at which it starts to rise becomes up and down with respect to 1000 Pa, or the pressure at which air escapes becomes up and down with respect to 400 Pa. Therefore, the ratio of pressure change must necessarily be made small in the whole range of 1000 Pa to 400 Pa, and what is necessary is just to reduce the ratio of pressure change in the minimum required pressure range according to conditions, such as the magnitude | size of electrostatic attraction force.

In addition, depending on the size of the electrostatic attraction force and the substrate, the air can be released between the substrate and the stage by maintaining a predetermined set time at a constant pressure within the range of 1000 Pa to 400 Pa, thereby reducing the substrate drop prevention effect. You can get it.

In addition, although the valve 8a and the return valve 9a were demonstrated to be changed in 2 steps in the said 1st Embodiment, even if it is controlled to change more than 3 steps or the opening / closing degree is linear rather than stepwise, the same objective function is provided. It can be realized.

In addition, you may employ | adopt the valve operation in 1st Embodiment for each valve operation of 2nd Embodiment.

Moreover, the exhaust mechanism 8 and the air supply mechanism 9 in each embodiment can be employ | adopted and selected suitably, and can be comprised.

In either case, according to the substrate bonding apparatus and the substrate bonding method of the present invention, dust and dirt adhere to the substrate display surface or the substrate electrode surface, and the degradation of the electrical characteristics of the substrate can be avoided as much as possible. Adhesion is performed, it is employ | adopted especially for manufacture of a liquid crystal display panel, etc., the improvement of the manufacturing yield can be achieved, and a remarkable effect can be acquired practically.

As mentioned above, according to the board | substrate bonding apparatus and board | substrate bonding method which concern on this invention, a high quality board | substrate can be bonded together, and the effect acquired by especially applying to manufacture of a liquid crystal display panel is large.

Moreover, according to the board | substrate bonding apparatus and board | substrate bonding method which concern on this invention, the fall of the upper substrate resulting from releasing the vacuum of air in a chamber can be prevented.

Claims (19)

In the substrate pasting device for pasting two substrates in a sealed chamber, A pump connected to the chamber and for evacuating the chamber; And a control means for controlling a valve of a pipe connecting the pump and the chamber, and for changing a suction resistance of the pipe. The method of claim 1, And the control means is configured to control the suction resistance from the large to the small. In the substrate bonding method of bonding two substrates together in a sealed chamber, A pump connected to the chamber and for evacuating the chamber; And controlling means for controlling the return valve which is continuous to the return opening opened in the chamber after the two substrates are bonded together, and changing the inflow resistance of the gas flowing into the chamber to be small from the table. Board | substrate pasting apparatus made into. The method of claim 3, And said control means is configured to control a valve of a pipe connecting said chamber and said pump, and to change the suction resistance of said pipe from base to small before joining said two substrates. . 4. The substrate bonding apparatus according to claim 3, wherein the chamber is provided with a louver mechanism for changing a flow direction of gas from the return port into the chamber. In the substrate bonding method of bonding two substrates together in a sealed chamber, A first step of opposing the pair of substrates at intervals in the chamber; A second step of starting the vacuum drain in the chamber by operating the pump connected to the chamber with a predetermined suction resistance after the first step; The valve of the pipe which connected the said pump and the said chamber is controlled so that the suction resistance of the said pipe may become smaller after a predetermined time after the start of vacuum releasing by this second process or when the pressure in the chamber reaches a predetermined pressure. 3rd process to do, A fourth step of pasting the two substrates opposed to each other in the chamber after the third step; After the fourth step, controlling the return valve which is continuous to the return opening opened in the chamber, and operating gas so that the gas is introduced into the chamber under a predetermined inflow resistance and the atmospheric pressure in the chamber shifts toward atmospheric pressure. 5 process, And a sixth step of taking out the two bonded substrates in the chamber after the fifth step. 7. The substrate bonding method according to claim 6, wherein the fifth step controls the return valve and changes the inflow resistance of the gas flowing into the chamber from the large to the small. In a substrate bonding apparatus for bonding two substrates together in a sealed chamber, A pump connected to the chamber and for evacuating air in the chamber; And a control means for changing the suction capacity of the pump. 9. The substrate bonding apparatus according to claim 8, wherein the control means is configured to control the suction capability to be large from small. 10. The method of claim 8, wherein, after the two substrates are bonded together, the return valve which is continuous to the return opening opened in the chamber is controlled, and the inflow resistance of the gas flowing into the chamber is changed from the table to the small. Substrate bonding apparatus characterized in that. The substrate bonding apparatus according to claim 10, wherein the chamber is provided with a louver mechanism for changing the direction of flow of gas from the return port into the chamber. In a substrate bonding method for bonding two substrates together in a sealed chamber, A first process of opposing the pair of substrates at intervals in the chamber; After this first step, a second step of starting the vacuum of the chamber by operating a pump connected to the chamber with a predetermined suction capacity; After a predetermined time elapses after the start of vacuum releasing by the second step or when the pressure in the chamber reaches a predetermined pressure, the pump or the discharge valve of the pump or the pump, or the pump and the A third step of controlling the valve of the pipe connecting the chamber, A fourth step of pasting the two substrates arranged oppositely in the vacuum chamber after this third step, After this fourth step, the gas is introduced into the chamber under a predetermined inflow resistance by the control of the return valve continuously connected to the return port opened in the chamber, and the air pressure in the chamber is shifted toward the atmospheric pressure. 5th process, And a sixth step of taking out the two bonded substrates from the inside of the chamber after the fifth step. 13. The substrate joining method according to claim 12, wherein the fifth step controls the return valve continuous to the return opening opened in the chamber, and changes the inflow resistance of the gas flowing into the chamber from the bed to the small. Way. The pressure detector according to claim 1, further comprising a pressure detector for detecting pressure in the chamber at predetermined time intervals. The control means includes a storage unit that stores a relationship between the elapsed time from the start of vacuum releasing of the chamber and the pressure target value in the chamber corresponding to the elapsed time; A comparison unit for comparing the pressure detection value from the pressure detector with the pressure target value stored in the storage unit; And a control unit for controlling opening and closing of the valve in accordance with the comparison result of the comparison unit. 7. The seventh process according to claim 6, further comprising: a seventh step of previously storing a relationship between the elapsed time from the start of vacuum releasing in the chamber and the pressure target value in the chamber corresponding to the elapsed time; An eighth step of detecting a pressure in the chamber at a predetermined time interval after a second step, A ninth step of comparing the pressure detection value detected in the eighth step with the pressure target value stored in the seventh step, And a tenth step of controlling opening and closing of the valve in accordance with the result of the ninth step. 15. The pressure relationship between the elapsed time from the start of vacuum subtraction in the chamber stored in the storage unit and the pressure target value in the chamber corresponding to the elapsed time is determined by the change in pressure with respect to the elapsed time within the preset pressure range. A substrate bonding apparatus, characterized in that the ratio becomes smaller than the ratio of the pressure change with respect to the passage of time outside the set pressure range. 17. The substrate bonding apparatus of claim 16, wherein the pressure range is in the range of 1000 Pa to 400 Pa. The relationship between the elapsed time from the start of vacuum subtraction in the stored chamber and the pressure target value in the chamber corresponding to the elapsed time, wherein the ratio of the pressure change with respect to the elapsed time within the preset pressure range is determined. A substrate bonding method characterized in that the relationship becomes smaller than the ratio of the pressure change with respect to the passage of time outside the set pressure range. 19. The method of claim 18, wherein the pressure range is in the range of 1000 Pa to 400 Pa.