KR20030063211A - Method for manufacturing a white led - Google Patents
Method for manufacturing a white led Download PDFInfo
- Publication number
- KR20030063211A KR20030063211A KR10-2003-0003705A KR20030003705A KR20030063211A KR 20030063211 A KR20030063211 A KR 20030063211A KR 20030003705 A KR20030003705 A KR 20030003705A KR 20030063211 A KR20030063211 A KR 20030063211A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- blue
- white
- white led
- light emitting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- 239000003086 colorant Substances 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 7
- 229910017639 MgSi Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
본 발명은 백색 LED의 제조 방법에 관한 것으로, 특히 패키징 기판을 이용한 자외선 발광 LED 칩에 적색, 청색, 녹색등 삼색 혼합의 형광 물질을 입힌뒤 자외선 발광 LED 칩이 자색 광을 발광하는 점을 이용해 그 표면에 빛을 투과시켜 적색, 청색, 녹색 등 삼파장이 혼합된 백색광을 만드는 백색 LED의 제조 방법에 관한것이다.The present invention relates to a method of manufacturing a white LED, and in particular, by applying a fluorescent material of a mixture of red, blue, green, and three colors to an ultraviolet light emitting LED chip using a packaging substrate, the ultraviolet light emitting LED chip emits purple light. The present invention relates to a method of manufacturing a white LED that transmits light to a surface to produce white light in which three wavelengths such as red, blue, and green are mixed.
Description
본 발명은 백색 LED(Light Emitting Diode:발광 다이오드)의 제조 방법에 관한 것으로, 특히 패키징 기판을 이용한 자외선 발광 LED 칩에 적색, 청색, 녹색등 삼색 혼합의 형광 물질을 입힌뒤 자외선 발광 LED 칩이 자색 광을 발광하는 점을 이용해 그 표면에 빛을 투과시켜 적색, 청색, 녹색 등 삼파장이 혼합된 백색광을 만드는 백색 LED의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a white light emitting diode (LED), and in particular, a UV light emitting LED chip is purple after coating a fluorescent material of a mixture of red, blue, and green colors on an ultraviolet light emitting LED chip using a packaging substrate. The present invention relates to a method of manufacturing a white LED that transmits light to a surface using a light emitting point to produce white light including three wavelengths of red, blue, and green.
백색 LED 제조 방법의 종래예로는 두 가지 방법이 있다.There are two conventional examples of the white LED manufacturing method.
첫 번째 방법으로는 일본 니치아(Nichia)의 대만 특허 등록번호 제 383508 호에서 기술되는, 청색 발광 칩에 황색 형광 물질(YAG)을 추가하는 방법이 있다.The first method is a method of adding a yellow fluorescent material (YAG) to a blue light emitting chip, which is described in Japanese Patent No. 383508 to Nichia, Japan.
그러나, 이러한 방법으로 만들어지는 백색광은 청색과 황색의 쌍파장(two-wavelengh)으로 이루어져 지시용만으로 적합하고, 조명 용도 및 LCD 칼라 배경 광원 용도로는 적합하지 못했다. 또한 황색 형광 물질의 양을 조절하는 어려움으로 인해 자주 빛의 색깔이 청색으로 치우치거나 황색으로 치우치는 문제점이 발생했다.However, the white light produced by this method is composed of blue and yellow two-wavelenghs, which are suitable only for indicating purposes, and not for lighting applications and LCD color background light sources. In addition, due to the difficulty in controlling the amount of the yellow fluorescent material, the color of the light often shifted to blue or yellow has a problem.
두 번째 방법으로는 본 발명자의 대만 특허 등록번호 제 385063 호에서 기술되는, 자외선 발광 칩에 적색, 청색, 녹색의 혼합 형광 물질을 입힌 뒤 빛을 투과시켜 백색광으로 보이게 하는 방법이 있다.As a second method, there is a method of applying a mixed fluorescent material of red, blue, and green to an ultraviolet light emitting chip described in Taiwan Patent Registration No. 385063 of the inventor, and then transmitting the light to make it appear as white light.
이러한 방법은 자외선을 삼원색 형광 물질에 투과시켜 삼파장 백광을 만들어내는 가장 이상적인 방법이다. 그러나, 이전까지는 발광 효율이 높은 자외선 LED 발광칩이 나타나지 않아 제조상에 있어 많은 문제점이 있었다. 현재 자외선 LED를이용하는 일본의 니치아의 경우 삼파장의 길이가 371nm이고 파워 역시 2~3mW이다. 마찬가지로 일본의 도요다 고세이(Toyoda Gosei)의 제품 역시 380nm의 삼파장 길이에 파워는 약 2~3mW이다. 이러한 고효율의 자외선 LED 발광칩 제조가 어려운 이유는 재료의 특성과 제조 공정때문이다.This method is the most ideal way to transmit the ultraviolet rays through the three primary fluorescent material to produce three wavelength white light. However, there have been many problems in manufacturing until the ultraviolet LED light emitting chip with high luminous efficiency does not appear. Nichia in Japan, which currently uses ultraviolet LEDs, has a length of 371nm and power of 2-3mW. Similarly, Toyota Gosei's products in Japan have a 380nm three-wavelength length and power of about 2-3mW. The reason why manufacturing high-efficiency ultraviolet LED light emitting chips is difficult is because of the material properties and manufacturing process.
또한, 현재까지는 자외선을 덮을 투명한 수지가 없어 대부분 유기 수지가 사용되고 있고, 이러한 유기수지는 자외선을 흡수 및 열성화시켜 LED의 수명과 품질을 떨어뜨렸다.In addition, until now, there is no transparent resin to cover ultraviolet rays, and most organic resins are used. Such organic resins absorb and thermally absorb ultraviolet rays, which degrades the life and quality of LEDs.
본 발명은 종래형의 백색 LED의 결점 연구를 통해 보다 나은 백색 LED의 제조 기술을 제공하는 것으로, 자외선(파장 390~410nm)과 형광 성분을 이용하여 삼파장 백색 LED를 만들어내는 제조 방법을 제공하는 것이다.The present invention provides a better white LED manufacturing technology through the defect of the conventional white LED, and provides a manufacturing method for producing a three-wavelength white LED using ultraviolet (wavelength 390 ~ 410nm) and fluorescent components. .
도 1은 종래의 방법에 따라 제조된 백색 LED의 패키징 리드 프레임을 나타내는 도면;1 shows a packaging lead frame of a white LED manufactured according to a conventional method;
도 2는 본 발명에 따른 백색 LED의 리드 프레임을 나타내는 도면;2 shows a lead frame of a white LED according to the invention;
도 3은 본 발명에 따른 다른 형태의 백색 LED의 리드 프레임을 나타내는 도면;3 shows a lead frame of another type of white LED according to the present invention;
도 4는 본 발명에 따른 백색 LED의 몰딩 제작 구조도; 및4 is a structural diagram of a molding of a white LED according to the present invention; And
도 5는 본 발명에 따른 백색 LED의 스펙트럼을 나타내는 도면이다.5 is a view showing a spectrum of a white LED according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 자외선 발광칩 2 : 삼원색 형광 물질1: ultraviolet light emitting chip 2: three primary fluorescent material
3, 9 : 패키징 리드 프레임 4 : 와이어 리드3, 9: packaging lead frame 4: wire lead
5 : 리드 프레임 전극 10 : 기판 전극5: lead frame electrode 10: substrate electrode
본 발명의 백색 LED 제조 기술은 파장 390~410nm사이의 자색광을 형광 물질에 투과시켜 백색 광을 제조하는 기술로서, 상기한 청색 발광칩에 황색 형광 물질(YAG)을 추가하는 기술이나 자외선을 삼색 형광 물질에 투과시켜 삼파장의 백색광을 만드는 기술과는 다른 기술이다.The white LED manufacturing technology of the present invention is a technology for producing white light by transmitting a violet light having a wavelength of 390 ~ 410nm through a fluorescent material, the technology of adding a yellow fluorescent material (YAG) to the blue light emitting chip or three colors of ultraviolet light It is different from the technology of transmitting white light of three wavelengths by transmitting through fluorescent material.
본 발명에서 자색광을 이용한 이유는 미국의 크리 코퍼레이션(Cree Corporation)이 390~395nm 사이의 파장을 이용해서 파워 20mW 이상을 만들어 내는고효율 LED 칩을 만들어 냈기 때문인데, 이는 현재의 청색이나 자외선보다 높은 효율을 가지고 있다. 또한 390~410nm 범위내의 자외선에 의해서 형광 물질(적색, 청색, 녹색)은 고르게 발광될 수 있음을 본인의 여러차례의 실험으로 밝혀내었다.The reason for using purple light in the present invention is because Cree Corporation of the United States has made a high efficiency LED chip that produces more than 20mW of power using a wavelength between 390 ~ 395nm, which is higher than the current blue or ultraviolet light. Has efficiency. In addition, his experiments revealed that fluorescent materials (red, blue, green) can be emitted evenly by ultraviolet rays within the range of 390-410 nm.
그 중:among them:
적색의 형광 물질은 Y2O2S:Eu,Gd이고The red phosphor is Y 2 O 2 S: E u , G d
녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고,Green phosphor is Z n S: Cu, Al or Ca 2 MgSi 2 O 7 : Cl,
청색의 형광 물질은 BaMgAl10O17또는 (Sr,Ca,BaMg)10(PO4)6Cl2:Eu이다.The blue fluorescent substance is BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu.
적색, 청색, 녹색의 적당한 배합을 통해 백색광이나 여러가지 빛의 색깔 온도나 다양한 빛의 색깔을 만들어 낼 수 있다.With the right mix of red, blue and green, you can produce white light, different color temperatures, or different light colors.
도 2를 보면, 먼저 적당한 비율로 배합시킨 적색, 청색, 녹색의 삼원색 형광물질(2)이 자외선에서 충분한 백색광을 만들어낸다. 또한, 이 백색광은 고객의 다른 수요에 대처하기 위해 3000~8000K의 사이에서 조정될 수 있으며 적색, 청색, 녹색의 삼원색의 형광 물질(2) 역시 그 비율에 적용시켜 조정될 수 있다.Referring to FIG. 2, first, red, blue, and green three-primary fluorescent materials 2 blended in an appropriate ratio produce sufficient white light in ultraviolet light. In addition, the white light can be adjusted between 3000-8000K to meet different demands of the customer, and the red, blue and green three-color fluorescent materials 2 can also be adjusted by applying the ratio.
자외선 발광칩(1)을 패키징 리드 프레임(frame)(3)이나 패키징 리드 프레임(9)에 고정시키고, 와이어 리드(4)를 LED 발광칩, 리드 프레임 전극(5)(또는 기판 전극(10))과 패키징 리드 프레임(또는 패키징 리드 프레임(9))에 각각 연결 시킨다. 다음으로, 적당히 혼합된 삼원색 형광 물질(2)을 직접 또는 간접으로(도 3, 도 4참조) 자외선 발광 LED 칩(1)의 표면에 칠하는데 이를 빛에 투과시키면 삼파장의 백색광이 만들어지게 된다(도 5참조).The ultraviolet light emitting chip 1 is fixed to the packaging lead frame 3 or the packaging lead frame 9, and the wire lead 4 is fixed to the LED light emitting chip, the lead frame electrode 5 (or the substrate electrode 10). ) And packaging lead frame (or packaging lead frame 9), respectively. Next, an appropriately mixed trichromatic fluorescent substance 2 is applied directly or indirectly (see FIGS. 3 and 4) onto the surface of the ultraviolet emitting LED chip 1, and when it is transmitted through the light, three wavelengths of white light are produced ( See FIG. 5).
본 발명의 삼원색 형광 물질(2)의 구성은 다음과 같다.The configuration of the trichromatic fluorescent substance 2 of the present invention is as follows.
적색의 형광 물질은 Y2O2S:Eu,Gd이고,Red fluorescent substance is Y 2 O 2 S: E u , G d ,
녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고,Green phosphor is Z n S: Cu, Al or Ca 2 MgSi 2 O 7 : Cl,
청색의 형광 물질은 BaMgAl10O17또는 (Sr,Ca,BaMg)10(PO4)6Cl2:Eu이다.The blue fluorescent substance is BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu.
상술한 형광 물질이외에 기타 형광 물질을 이용할 수 있다. 따라서, 본 발명은 상술한 형광 물질만을 한정하는 것에 그치지 않고, 기타 자외선 파장(390~410nm) 범위를 발생시키는 형광 물질 역시 포함한다.Other fluorescent materials may be used in addition to the above-described fluorescent materials. Therefore, the present invention is not only limited to the above-described fluorescent materials, but also includes other fluorescent materials that generate other ultraviolet wavelengths (390 to 410 nm).
기존의 형광 물질의 연구는 파장이 254nm 또는 365nm범위내의 것에 한정해서 행해졌다. 반면에, 본 발명과 같이 자외선을 이용한 백색 발광 연구는 극소수였는데, 이는 고효율의 자외선 발광 LED 칩이 최근 1년에서야 비로서 개발된데 따른 것이다. 본 발명은 고효율의 자외선 LED 발광칩을 이용해서 형광 물질을 백색광으로 만들어 내는 기술에 관한 것으로, 본 발명에 따르면 백색광을 양호하게 발생시킬 수 있고 또 삼파장으로도 발생시킬 수 있다.Existing fluorescent materials have been studied in a limited range of wavelengths of 254 nm or 365 nm. On the other hand, the white light emission research using ultraviolet light as in the present invention was very few, which is due to the development of high-efficiency UV light emitting LED chips only in recent years. The present invention relates to a technique for producing a fluorescent material into white light using a high-efficiency ultraviolet LED light emitting chip, according to the present invention can generate white light well and can also be generated in three wavelengths.
상기한 바와 같이, 본 발명은 패키징 기판 또는 리드 프레임으로 구성되는 자외선 발광 LED 칩에 적색, 청색, 녹색의 삼원색을 혼합한 형광 물질을 직접 또는 간접적으로 칠하거나 또는 붙이는 방식으로 입힌뒤 자외선 발광 LED 칩을 패키징 기판이나 리드 프레임상에 고정시킨후 전극에 연결시키는 것을 특징으로 하는 백색 LED의 제조 방법을 제공하고, 그리고 상기 자외선 발광 LED 칩이 발생시키는 자외선 빛의 파장 범위가 390nm~410nm사이인 것을 특징으로 하는 백색 LED의 제조 방법, 상기 패키징 기판이 인쇄회로기판(Printed Circuit Board : PCB), 세라믹 기판, 실리콘 기판, 또는 금속 기판으로 할 수 있는 것을 특징으로 하는 백색 LED의 제조 방법, 및 상기 적색의 형광 물질은 Y2O2S:Eu,Gd이고, 녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고, 그리고 청색의 형광 물질은 BaMgAl10O17또는 (Sr,Ca,BaMg)10(PO4)6Cl2:Eu인 것을 특징으로 하는 백색 LED의 제조 방법을 제공한다.As described above, the present invention is applied to the UV light emitting LED chip consisting of a packaging substrate or a lead frame by coating or pasting a fluorescent material mixed with three primary colors of red, blue and green directly or indirectly, or by attaching the UV light emitting LED chip. It provides a method of manufacturing a white LED, characterized in that is fixed to the packaging substrate or lead frame and connected to the electrode, and the wavelength range of ultraviolet light generated by the ultraviolet light emitting LED chip is between 390nm ~ 410nm A method of manufacturing a white LED, wherein the packaging substrate can be a printed circuit board (PCB), a ceramic substrate, a silicon substrate, or a metal substrate. The fluorescent material is Y 2 O 2 S: E u , G d , and the green fluorescent material is Z n S: Cu, Al or Ca 2 MgSi 2 O 7 : Cl, and blue The fluorescent material of BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu provides a method for producing a white LED, characterized in that.
이상과 같이, 본원 발명은 고효율의 자외선 LED 발광칩을 이용하여 형광 물질을 백색광으로 만들어 냄으로서, 단일 칩을 이용한 백색 LED 제조 기술중 발광 효율이 가장 높은 삼파장의 백색광을 제조할 수 있는 효과를 가진다.As described above, the present invention has the effect of producing a white light having the highest luminous efficiency among the white LED manufacturing technology using a single chip by producing a fluorescent material with white light using a high-efficiency UV LED light emitting chip. .
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021020760A CN1266776C (en) | 2002-01-21 | 2002-01-21 | Method for making white colore LED |
| CN02102076.0 | 2002-01-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030063211A true KR20030063211A (en) | 2003-07-28 |
| KR100702297B1 KR100702297B1 (en) | 2007-03-30 |
Family
ID=4739651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030003705A KR100702297B1 (en) | 2002-01-21 | 2003-01-20 | Method for manufacturing a white led |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2003224306A (en) |
| KR (1) | KR100702297B1 (en) |
| CN (1) | CN1266776C (en) |
| DE (1) | DE10301169A1 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100851605B1 (en) * | 2006-09-06 | 2008-08-12 | 목산전자주식회사 | Method for manufacturing a white led |
| US7514020B2 (en) | 2005-07-06 | 2009-04-07 | Samsung Electro-Mechanics Co., Ltd. | Silicophosphate-based phosphor and light-emitting device including the same |
| US7554129B2 (en) | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| KR101053325B1 (en) * | 2005-03-19 | 2011-08-01 | 엘지전자 주식회사 | Dust collection unit of vacuum cleaner combined with water cleaning |
| US8070984B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8134165B2 (en) | 2007-08-28 | 2012-03-13 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| US7800121B2 (en) | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
| US10309587B2 (en) | 2002-08-30 | 2019-06-04 | GE Lighting Solutions, LLC | Light emitting diode component |
| CN100383988C (en) * | 2003-08-20 | 2008-04-23 | 刘行仁 | White light emitting diode and phosphor for light conversion thereof |
| DE10345516B4 (en) * | 2003-09-30 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation emitting semiconductor device and method for its production |
| JP2005209795A (en) * | 2004-01-21 | 2005-08-04 | Koito Mfg Co Ltd | Light emitting module and lighting tool |
| CN100341163C (en) * | 2004-03-29 | 2007-10-03 | 宏齐科技股份有限公司 | Weight-light ligh-emitting diode unit |
| KR100655894B1 (en) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Light Emitting Device |
| KR100599717B1 (en) * | 2004-05-31 | 2006-07-13 | 삼성에스디아이 주식회사 | Plasma display panel |
| CN1333472C (en) * | 2005-04-04 | 2007-08-22 | 江苏奥雷光电有限公司 | Large power luminous diode fluorescent powder curing technology |
| CN1848463A (en) * | 2005-04-15 | 2006-10-18 | 南京汉德森科技股份有限公司 | LED white light source based on metal circuit board |
| KR100780186B1 (en) * | 2005-04-27 | 2007-11-27 | 삼성전기주식회사 | Backlight unit for LCD using light emitting diode |
| JP5057692B2 (en) | 2005-04-27 | 2012-10-24 | サムソン エルイーディー カンパニーリミテッド． | Backlight unit using light emitting diode |
| CN100420728C (en) * | 2005-08-22 | 2008-09-24 | 中国科学院长春光学精密机械与物理研究所 | Method for converting rare-earth triple primary-color material into white light by bluish violet diode |
| CN100426541C (en) * | 2005-09-06 | 2008-10-15 | 亿镫光电科技股份有限公司 | Light-emitting device generating visible light |
| CN100438026C (en) * | 2005-09-16 | 2008-11-26 | 鸿富锦精密工业（深圳）有限公司 | White light light-emitting diode and producing method thereof |
| KR101258397B1 (en) | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | Copper-Alkaline-Earth-Silicate mixed crystal phosphors |
| JP2007273562A (en) | 2006-03-30 | 2007-10-18 | Toshiba Corp | Semiconductor light-emitting device |
| KR101258227B1 (en) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | Light emitting device |
| US7842960B2 (en) | 2006-09-06 | 2010-11-30 | Lumination Llc | Light emitting packages and methods of making same |
| CN101179102B (en) * | 2006-11-10 | 2010-12-01 | 深圳市光伏能源科技有限公司 | LED lamp and producing process |
| DE102009030205A1 (en) | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate |
| KR101055762B1 (en) | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device employing a light-emitting material having an oxyosilicate light emitter |
| US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
| US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
| JP6850265B2 (en) * | 2015-06-24 | 2021-03-31 | シーバラ アイピー アイ ビー．ブイ． | Fluorescent ceramic |
| KR20170017315A (en) | 2015-08-06 | 2017-02-15 | 정수동 | LED light source for implementing a high S/P ratio |
| CN107384383A (en) * | 2017-08-18 | 2017-11-24 | 苏州轻光材料科技有限公司 | A kind of compound fluorescent material of UV excited white lights LED |
| KR20170003082U (en) | 2017-08-21 | 2017-09-01 | 정수동 | Smt led light source with improved s/p ratio |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001144331A (en) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light-emitting device |
-
2002
- 2002-01-21 CN CNB021020760A patent/CN1266776C/en not_active Expired - Fee Related
-
2003
- 2003-01-14 JP JP2003005579A patent/JP2003224306A/en active Pending
- 2003-01-15 DE DE10301169A patent/DE10301169A1/en not_active Ceased
- 2003-01-20 KR KR1020030003705A patent/KR100702297B1/en active IP Right Grant
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11605762B2 (en) | 2004-05-13 | 2023-03-14 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10672956B2 (en) | 2004-05-13 | 2020-06-02 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10186642B2 (en) | 2004-05-13 | 2019-01-22 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US10916684B2 (en) | 2004-05-13 | 2021-02-09 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US8318044B2 (en) | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8075802B2 (en) | 2004-06-10 | 2011-12-13 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8070984B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US7554129B2 (en) | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8883040B2 (en) | 2004-06-10 | 2014-11-11 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8900482B2 (en) | 2004-06-10 | 2014-12-02 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| KR101053325B1 (en) * | 2005-03-19 | 2011-08-01 | 엘지전자 주식회사 | Dust collection unit of vacuum cleaner combined with water cleaning |
| US7514020B2 (en) | 2005-07-06 | 2009-04-07 | Samsung Electro-Mechanics Co., Ltd. | Silicophosphate-based phosphor and light-emitting device including the same |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US9576939B2 (en) | 2006-03-31 | 2017-02-21 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US11322484B2 (en) | 2006-03-31 | 2022-05-03 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US12009348B2 (en) | 2006-03-31 | 2024-06-11 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| KR100851605B1 (en) * | 2006-09-06 | 2008-08-12 | 목산전자주식회사 | Method for manufacturing a white led |
| US8137589B2 (en) | 2007-08-22 | 2012-03-20 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8134165B2 (en) | 2007-08-28 | 2012-03-13 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003224306A (en) | 2003-08-08 |
| CN1266776C (en) | 2006-07-26 |
| CN1434521A (en) | 2003-08-06 |
| KR100702297B1 (en) | 2007-03-30 |
| DE10301169A1 (en) | 2003-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100702297B1 (en) | Method for manufacturing a white led | |
| KR100704492B1 (en) | Preparation of White Emitting Diode made use of Phosphor | |
| US20100040769A1 (en) | Method for Manufacturing a Triple Wavelengths White Led | |
| JP3164267U (en) | Lighting module | |
| US6909234B2 (en) | Package structure of a composite LED | |
| US7488990B2 (en) | Using multiple types of phosphor in combination with a light emitting device | |
| CN100576535C (en) | The lighting device of luminescent device and the described luminescent device of use | |
| US8541798B2 (en) | Semiconductor light emitting device, and backlight and display device comprising the semiconductor light emitting device | |
| KR100771811B1 (en) | White light emitting device | |
| EP2305776B1 (en) | Alkaline earth metal sulfide based red phosphor and white light emitting device thereof | |
| US20060082296A1 (en) | Mixture of alkaline earth metal thiogallate green phosphor and sulfide red phosphor for phosphor-converted LED | |
| US20070126011A1 (en) | White light emitting diode | |
| US6805600B2 (en) | Method of manufacturing white light source | |
| KR20050051533A (en) | Luminous device | |
| KR20050108816A (en) | Light emitting device with rgb diodes and phosphor converter | |
| US20060249739A1 (en) | Multi-wavelength white light emitting diode | |
| JP2010050438A (en) | White light-emitting diode | |
| JP2004296830A (en) | Method of manufacturing white light-emitting diode | |
| Lee et al. | Process development for yellow phosphor coating on blue light emitting diodes (LEDs) for white light illumination | |
| US20070104861A1 (en) | White light LED production method | |
| US20050218781A1 (en) | Triple wavelengths light emitting diode | |
| KR100612962B1 (en) | White light emitting diode based on the mixing of the tri-color phosphors | |
| KR20040088418A (en) | Tri-color white light emitted diode | |
| US20050236958A1 (en) | White light-emitting device | |
| KR20050089490A (en) | White color light emitting diode using violet light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120215 Year of fee payment: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20130227 Year of fee payment: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20160321 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20190314 Year of fee payment: 13 |