KR20010005046A - Method for fabricating image sensor with improved photo sensitivity - Google Patents
Method for fabricating image sensor with improved photo sensitivity Download PDFInfo
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- KR20010005046A KR20010005046A KR1019990025833A KR19990025833A KR20010005046A KR 20010005046 A KR20010005046 A KR 20010005046A KR 1019990025833 A KR1019990025833 A KR 1019990025833A KR 19990025833 A KR19990025833 A KR 19990025833A KR 20010005046 A KR20010005046 A KR 20010005046A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 206010034972 Photosensitivity reaction Diseases 0.000 title abstract 2
- 230000036211 photosensitivity Effects 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000011229 interlayer Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract 2
- 238000009499 grossing Methods 0.000 abstract 1
- 206010034960 Photophobia Diseases 0.000 description 8
- 208000013469 light sensitivity Diseases 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
본 발명은 이미지센서(image sensor) 제조방법에 관한 것으로, 특히 광감도 개선을 위한 CMOS 이미지센서 제조방법에 관한 것이다.The present invention relates to a method for manufacturing an image sensor, and more particularly, to a method for manufacturing a CMOS image sensor for improving light sensitivity.
CMOS 이미지센서는 빛을 감지하는 광감지 부분과 감지된 빛을 전기적 신호로 처리하여 데이타화 하는 로직회로 부분으로 구성 되어있다. 광감도를 높이기 위하여 전체 이미지센서 소자에서 광감지 부분의 면적이 차지하는 비율(Fill Factor)을 크게 하려는 노력이 진행되고 있지만, 근본적으로 로직회로 부분을 제거할 수 없기 때문에 제한된 면적하에서 이러한 노력에는 한계가 있다. 따라서 광감도를 높여주기 위하여 광감지 부분 이외의 영역으로 입사하는 빛의 경로를 바꿔서 광감지 부분으로 모아주는 집광기술이 등장하였는데, 이러한 기술이 바로 마이크로 렌즈 형성 기술이다. 또한, 칼라 이미지를 구현하기 위한 이미지센서는 외부로부터의 빛을 받아 광전하를 생성 및 축적하는 광감지부분 상부에 칼라 필터가 어레이되어 있다. 칼라 필터 어레이(CFA : Color Filter Array)는 레드(Red), 그린(Green) 및 블루(Blue)의 3가지 칼라로 이루어지거나, 옐로우(Yellow), 마젠타(Magenta) 및 시안(Cyan)의 3가지 칼라로 이루질 수 있다.CMOS image sensor is composed of light sensing part that detects light and logic circuit part that processes detected light into electrical signal and makes data. Efforts have been made to increase the fill factor of the area of the photo-sensing part in the overall image sensor device to increase the light sensitivity. However, this effort is limited under a limited area because the logic circuit part cannot be removed. . Therefore, in order to increase the light sensitivity, a light condensing technology that changes the path of light incident to a region other than the light sensing portion and collects the light sensing portion has emerged. Such a technique is a microlens forming technique. In addition, the image sensor for implementing a color image is a color filter array is arranged on the upper portion of the light sensing portion for receiving and receiving light from the outside to generate and accumulate photocharges. The color filter array (CFA) consists of three colors: red, green, and blue, or three colors: yellow, magenta, and cyan. It can be made with a collar.
도1은 종래기술에 따라 제조된 이미지센서를 개략적으로 나타낸 단면도이다.1 is a schematic cross-sectional view of an image sensor manufactured according to the prior art.
도1을 참조하여 종래기술에 따른 이미지센서 제조방법을 간단히 언급하면, 실리콘 기판(1)에 소자간의 전기적인 절연을 위하여 필드절연막(2)을 형성하고, 수광소자의 포토다이오드를 포함하는 단위픽셀(3)들을 형성한 후 제1층간절연막(4)을 도포하여 평탄화시킨다. 이후 제1금속배선(5)을 형성하고, 다시 제2층간절연막(6)을 형성한 다음, 제2금속배선(7)을 형성한다. 이후 수분이나 스크랫치로부터 소자를 보호하기 위하여 소자보호막(8)을 형성하고 이어서 소자의 칼라이미지 구현을 위하여 세가지 색깔의 칼라필터(9)를 어레이시킨다. 이후 칼라필터(9) 패턴들로 인해 발생한 단차를 제거하기 위하여 칼라필터(9) 패턴 위에 평탄화용 포토레지스트(10)를 도포하여 평탄화시키고, 마지막으로 단위픽셀(3) 내부로 입사되는 광을 포토다이오드로 집속시키기 위하여 각 단위픽셀(3) 위에 포토레지스트를 그 재질로서 사용한 마이크로렌즈(11)를 형성시킨다.Referring to FIG. 1, a method of manufacturing an image sensor according to the related art is briefly described. A unit pixel including a photodiode of a light receiving device is formed by forming a field insulating film 2 on the silicon substrate 1 for electrical insulation between devices. After forming (3), the first interlayer insulating film 4 is applied and planarized. After that, the first metal wiring 5 is formed, and the second interlayer insulating film 6 is formed again, and then the second metal wiring 7 is formed. Thereafter, the device protection film 8 is formed to protect the device from moisture or scratches, and then the color filters 9 of three colors are arrayed to implement a color image of the device. Then, in order to remove the step caused by the color filter 9 patterns, the planarization photoresist 10 is applied on the color filter 9 pattern to be flattened, and finally, the light incident into the unit pixel 3 is photographed. In order to focus on a diode, a microlens 11 using a photoresist as a material is formed on each unit pixel 3.
전술한 바와 같이 종래 이미지센서에서의 칼라필터(9)는 소자보호막(8) 형성후 바로 형성하였으므로 금속배선(5,7)에 의한 단차에 의해 칼라필터(9)의 두께가 두꺼워지고 그 두께 균일성도 열화되는 문제점이 있었다. 이러한 문제로 인해 광투과도가 저하되고 불균일해져 이미지센서의 광감도가 열화되는 문제를 야기하였다. 아울러, CMOS 공정시 진행되는 여러층의 층간절연막(4,6) 및 소자보호막(8) 두께로 인해 광이 흡수됨으로써 이 또한 이미지센서의 광감도를 열화시키는 하나의 원인이 되었다.As described above, since the color filter 9 of the conventional image sensor is formed immediately after the element protective film 8 is formed, the thickness of the color filter 9 becomes thick due to the step by the metal wirings 5 and 7, and the thickness is uniform. There was a problem of deterioration of saints. Due to this problem, the light transmittance is lowered and uneven, causing a problem that the light sensitivity of the image sensor is deteriorated. In addition, due to the absorption of light due to the thicknesses of the interlayer insulating films 4 and 6 and the device protective film 8 which are progressed during the CMOS process, this also causes one to deteriorate the light sensitivity of the image sensor.
본 발명은 상술한 바와 같은 종래기술의 문제점을 해결하기 위하여 안출된 것으로서, 광감도를 향상시키기 위한 이미지센서 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the prior art as described above, the object is to provide a method for manufacturing an image sensor for improving the light sensitivity.
도1은 종래기술에 따라 제조된 이미지센서를 개략적으로 나타낸 단면도,1 is a cross-sectional view schematically showing an image sensor manufactured according to the prior art;
도2a 내지 도2d는 본 발명의 일실시예에 따른 이미지센서 제조 공정을 나타내는 단면도,2A through 2D are cross-sectional views illustrating an image sensor manufacturing process according to an embodiment of the present invention;
도3a 및 도3b는 본 발명의 다른 실시예에 따른 이미지센서 제조 공정을 나타내는 단면도.3A and 3B are cross-sectional views illustrating a manufacturing process of an image sensor according to another exemplary embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
201 : 반도체기판 202 : 필드절연막201: semiconductor substrate 202: field insulating film
203 : 단위픽셀 204 : 제1층간절연막203: unit pixel 204: first interlayer insulating film
205 : 제1금속배선 206 : 제2층간절연막205: first metal wiring 206: second interlayer insulating film
207 : 제2금속배선 208 : 소자보호막207: second metal wiring 208: device protection film
212 : 마스크패턴 213 : 실리콘옥시나이트라이드층212: mask pattern 213: silicon oxynitride layer
214 : 포토레지스트 215 : 칼라필터214: photoresist 215: color filter
216 : 평탄화 포토레지스트층 217 : 마이크로렌즈216 planarization photoresist layer 217 microlens
상기 목적을 달성하기 위한 일특징적인 본 발명은, 이미지센서 제조방법에 있어서, 기판상에 광감지소자를 포함하는 소자들을 형성하고 적어도 한층의 층간절연막과 적어도 한층의 금속배선 및 소자보호막을 형성하는 제1단계: 상기 광감지소자의 상부에 상기 층간절연막이 일부 잔류하면서 홈이 형성되도록, 선택적으로 상기 소자보호막 및 상기 층간절연막을 식각하는 제2단계: 상기 제2단계가 완료된 결과물의 표면을 따라 반사방지막을 형성하는 제3단계; 상기 홈 내에 포토레지스트를 매립하는 제4단계; 및 상기 제3단계가 완료된 결과물 상에 칼라필터와 평탄화용 포토레지스트와 마이크로렌즈를 형성하는 제5단계를 포함하여 이루어진다.According to one aspect of the present invention, there is provided a method of manufacturing an image sensor, the method including forming elements including an optical sensing element on a substrate, and forming at least one interlayer insulating film and at least one metal wiring and a device protective film. First step: selectively etching the device protective film and the interlayer insulating film so that a groove is formed while a portion of the interlayer insulating film remains on the photosensitive device; and a second step: along the surface of the result of the second step is completed A third step of forming an anti-reflection film; A fourth step of embedding a photoresist in the groove; And a fifth step of forming a color filter, a planarization photoresist, and a microlens on the resultant of the third step.
바람직하게, 상기 상기 제4단계는 상기 제3단계가 완료된 결과물의 전면에 상기 포토레지스트를 형성하고 전면 에치백하여 이루어지는 것을 특징으로 한다.Preferably, the fourth step is formed by forming the photoresist on the entire surface of the resultant of the third step is completed and etched back the entire surface.
또한 상기 목적 달성을 위한 다른 특징적인 본 발명은 이미지센서 제조방법에 있어서, 기판상에 광감지소자를 포함하는 소자들을 형성하고 적어도 한층의 층간절연막과 적어도 한층의 금속배선 및 소자보호막을 형성하는 제1단계: 상기 광감지소자의 상부에 상기 층간절연막이 일부 잔류하면서 홈이 형성되도록, 선택적으로 상기 소자보호막 및 상기 층간절연막을 식각하는 제2단계: 상기 제2단계가 완료된 결과물의 표면을 따라 반사방지막을 형성하는 제3단계; 상기 홈 내에 칼라필터를 형성하는 제4단계; 및 상기 제3단계가 완료된 결과물 상에 평탄화용 포토레지스트와 마이크로렌즈를 형성하는 제5단계를 포함하여 이루어진다.In addition, another aspect of the present invention for achieving the above object is a method for manufacturing an image sensor, comprising: forming a device including a photosensitive device on a substrate and forming at least one interlayer insulating film and at least one metal wiring and device protection film; Step 1: selectively etching the device protective film and the interlayer insulating film so that a groove is formed while a part of the interlayer insulating film remains on the photosensitive device; and second step: reflection along the surface of the resultant product of which the second step is completed Forming a barrier film; Forming a color filter in the groove; And a fifth step of forming a planarization photoresist and a microlens on the resultant of the third step.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
도2a 내지 도2d는 본 발명의 일실시예에 따른 이미지센서 제조 공정을 나타낸다.2a to 2d show an image sensor manufacturing process according to an embodiment of the present invention.
먼저, 도2a를 참조하면, 실리콘등의 반도체기판(201)위에 소자간의 전기적인 절연을 위하여 필드절연막(202)을 형성하고, 광감지소자를 포함하는 단위픽셀(203)과 주변회로 등의 이미지센서를 구성하는 소자들을 형성한다. 이어서, 제1층간절연막(204)을 도포하여 평탄화 시키고, 제1금속배선(205)을 형성한다. 계속해서 제2층간절연막(206)을 형성하고 평탄화시킨 다음 제2금속배선(207)을 형성한다. 이후 수분이나 스크랫치로부터 소자를 보호하기 위하여 결과물 전면에 소자보호막(208)을 형성한다. 여기까지의 공정은 종래의 이미지센서 방법과 동일하다.First, referring to FIG. 2A, a field insulating film 202 is formed on a semiconductor substrate 201 such as silicon for electrical insulation between devices, and an image of a unit pixel 203 including a photosensitive device, a peripheral circuit, and the like. The elements constituting the sensor are formed. Subsequently, the first interlayer insulating film 204 is coated and planarized to form a first metal wiring 205. Subsequently, the second interlayer insulating film 206 is formed and planarized to form a second metal wiring 207. Afterwards, the device protection layer 208 is formed on the entire surface of the product to protect the device from moisture or scratches. The process up to this point is the same as the conventional image sensor method.
이어서, 단위픽셀(203) 상부의 소자보호막(208) 및 층간 절연막들(206, 204)을 마스크패턴(212)을 사용해서 선택적으로 식각하여 홈을 형성한다. 이때 단위픽셀(203) 상에 층간절연막을 소정두께 잔류시켜야 한다(도면부호 204a).Subsequently, a groove is formed by selectively etching the device protection layer 208 and the interlayer insulating layers 206 and 204 on the unit pixel 203 using the mask pattern 212. At this time, an interlayer insulating film must be left on the unit pixel 203 (reference numeral 204a).
이어서, 도2b에 도시된 바와 같이 마스크패턴(212)을 제거하고 결과물의 표면을 따라 잔류 층간절연막(204a)에 의한 광반사현상을 완화시키기 위하여 광굴절률을 조절할 수 있는 반사방지용 실리콘옥시나이트라이드(SiNxOy)층(213)을 얇게 형성한다.Subsequently, as shown in FIG. 2B, the antireflection silicon oxynitride may be removed in order to remove the mask pattern 212 and to mitigate light reflection caused by the residual interlayer insulating film 204a along the surface of the resultant film. The SiNxOy) layer 213 is formed thin.
이어서, 도2c에 도시된 바와 같이, 상기 홈 내에 포토레지스트(214)를 매립한다. 이때 홈 내부에만 포토레지스트를 매립할 수도 있고, 실리콘옥시나이트라이드층(213)이 드러나지 않은 상태에서 포토레지스트(214)가 평탄화를 이루도록 할 수 있는 바, 이 방법들은 여러가지가 있을 수 있으나, 결과물의 전면에 포토레지스트(214)를 두껍게 도포한 다음 전면 에치백을 실시하는 방법이 바람직하다.Subsequently, as shown in Fig. 2C, the photoresist 214 is embedded in the groove. In this case, the photoresist may be buried only in the grooves, and the photoresist 214 may be planarized while the silicon oxynitride layer 213 is not exposed. It is preferable to apply a thick photoresist 214 to the entire surface and then perform a full etch back.
이어서, 도2d에 도시된 바와 같이, 단위픽셀(203) 상부지역의 상기 포토레지스트(214) 상에 소자의 칼라이미지 구현을 위하여 세가지 색깔의 칼라필터(215)를 어레이 하고, 평탄화용 포토레지스트(216)를 다시 도포하여 평탄화 시키고, 마지막으로 단위픽셀(203) 내부로 입사되는 광을 포토다이오드로 집속시키기 위하여 각 단위픽셀(203) 위에 마이크로렌즈(217)를 형성한다.Subsequently, as shown in FIG. 2D, three color filter 215 is arrayed on the photoresist 214 on the upper portion of the unit pixel 203 to realize a color image of the device, and a planarization photoresist ( 216 is applied again and planarized, and finally, a microlens 217 is formed on each unit pixel 203 to focus light incident into the unit pixel 203 into a photodiode.
도3a 및 도3b는 본 발명의 다른 실시예에 따른 이미지센서 제조 공정을 나타내는 것으로, 앞서 설명한 일실시예의 도2b 상태까지 공정을 진행한 다음, 홈 내에 각각 칼라필터(215)를 직접 형성하고, 평탄화용 포토레지스트(216)와 마이크로렌즈(217)을 형성시킨 것이다. 상기 다른 실시예는 일실시예보다 공정 스텝을 줄이므로써 공정을 간소화시킬 수 있다는 장점을 갖는다.3A and 3B illustrate an image sensor manufacturing process according to another embodiment of the present invention. After the process is performed to the state of FIG. 2B of the above-described embodiment, color filters 215 are formed directly in the grooves. The planarization photoresist 216 and the microlens 217 are formed. The other embodiment has the advantage of simplifying the process by reducing the process step than the embodiment.
전술한 본 발명은 금속배선에 의한 단차에 의해 칼라필터의 두께가 두꺼워지고 그 두께 균일성도 열화되는 문제로 인해 광투과도가 저하되고 불균일해지는 문제점과, CMOS 공정시 진행되는 여러층의 층간절연막 및 소자보호막 두께로 인해 입사광이 손실되는 문제점을 방지하여 이미지센서의 광감도를 개선할 수 있다.The present invention described above has a problem that the light transmittance is lowered and is uneven due to the problem that the thickness of the color filter becomes thick and the thickness uniformity is deteriorated due to the step due to the metal wiring, and the interlayer insulating film and the device that are processed in the CMOS process. The light sensitivity of the image sensor may be improved by preventing a problem that incident light is lost due to the thickness of the protective film.
이상에서 설명한 본 발명은 더블금속배선 공정을 전제로 설명되었으나, 단일 금속배선 공정을 적용한 CMOS 이미지센서에서 본 발명은 적용될 수 있다.Although the present invention described above has been described on the premise of a double metal wiring process, the present invention can be applied to a CMOS image sensor to which a single metal wiring process is applied.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 균일한 칼라필터의 형성과 광감도를 개선하여 이미지센서의 특성을 향상시키는 효과가 있다.The present invention has the effect of improving the characteristics of the image sensor by forming a uniform color filter and improving the light sensitivity.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002881A (en) * | 2001-06-30 | 2003-01-09 | 주식회사 하이닉스반도체 | Image sensor |
| KR100551375B1 (en) * | 2002-06-29 | 2006-02-09 | 동부아남반도체 주식회사 | Cmos image sensor by using a reflex prevention film |
| KR100687102B1 (en) * | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | Image sensor and method of manufacturing the same |
| KR100745985B1 (en) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | Image sensor |
| KR100748326B1 (en) * | 2001-06-26 | 2007-08-09 | 매그나칩 반도체 유한회사 | Image sensor and fabricating method of the same |
| KR100755666B1 (en) * | 2006-01-03 | 2007-09-05 | 삼성전자주식회사 | Image sensor and fabricating method for the same |
| KR100937662B1 (en) * | 2007-12-24 | 2010-01-19 | 주식회사 동부하이텍 | Image sensor, and method of manufacturing thereof |
| RU2492554C2 (en) * | 2008-05-14 | 2013-09-10 | Интернэшнл Бизнес Машинз Корпорейшн | Methods of forming anti-reflection structures for cmos image sensors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06342896A (en) * | 1993-06-01 | 1994-12-13 | Matsushita Electron Corp | Solid-state image sensor and manufacture thereof |
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1999
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100748326B1 (en) * | 2001-06-26 | 2007-08-09 | 매그나칩 반도체 유한회사 | Image sensor and fabricating method of the same |
| KR20030002881A (en) * | 2001-06-30 | 2003-01-09 | 주식회사 하이닉스반도체 | Image sensor |
| KR100551375B1 (en) * | 2002-06-29 | 2006-02-09 | 동부아남반도체 주식회사 | Cmos image sensor by using a reflex prevention film |
| KR100745985B1 (en) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | Image sensor |
| US7446359B2 (en) | 2004-06-28 | 2008-11-04 | Samsung Electronics Co., Ltd. | Image sensor integrated circuit devices including a photo absorption layer |
| KR100687102B1 (en) * | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | Image sensor and method of manufacturing the same |
| KR100755666B1 (en) * | 2006-01-03 | 2007-09-05 | 삼성전자주식회사 | Image sensor and fabricating method for the same |
| KR100937662B1 (en) * | 2007-12-24 | 2010-01-19 | 주식회사 동부하이텍 | Image sensor, and method of manufacturing thereof |
| RU2492554C2 (en) * | 2008-05-14 | 2013-09-10 | Интернэшнл Бизнес Машинз Корпорейшн | Methods of forming anti-reflection structures for cmos image sensors |
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| KR100329782B1 (en) | 2002-03-25 |
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