KR19980069763A - Platinum thin film whose orientation is controlled and a method for manufacturing an electronic device having such a platinum thin film and an electronic device provided with a platinum thin film and a platinum thin film formed by the method - Google Patents

Abstract

In forming a platinum thin film on a substrate, a platinum thin film containing a nitrogen component is formed by depositing a platinum thin film in a single step in an atmosphere containing nitrogen in argon, which is an inert gas, and heat-processing the pure platinum to remove nitrogen. Form a thin film or deposit it in multiple steps, especially in two steps, in the first step, deposit a platinum film in an argon atmosphere, which is an inert gas, and in the second step, form a platinum film in an atmosphere containing nitrogen in argon. A method of manufacturing a platinum thin film and a method of manufacturing an electronic device having such a platinum thin film are disclosed. Deposition thickness in the first stage for the pressure ratio of the nitrogen component to the total gas containing the argon and nitrogen components in the formation of the platinum thin film, the temperature during deposition of the platinum thin film, subsequent heat treatment conditions and the total thickness in the case of two-step deposition. By changing any one of them, the orientation of the platinum thin film is controlled.

Description

Platinum thin film whose orientation is controlled and a method for manufacturing an electronic device having such a platinum thin film and an electronic device provided with a platinum thin film and a platinum thin film formed by the method

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a platinum thin film, which is a lower electrode material used in a capacitor of a DRAM cell or a nonvolatile memory cell, and a method for manufacturing the same. A device and a manufacturing method thereof.

As semiconductor memory devices become more integrated, DRAM capacitors have a method of reducing the thickness of the dielectric film forming the capacitor, increasing the effective area of the capacitor, and using a material having a high dielectric constant as the dielectric film in order to increase capacity. Is being proposed. First of all, when the thickness of the dielectric film is less than 100 μs, the reliability of the device is degraded by the Fowler-Nordheim current. The second method is complicated by the process, which increases the unit cost. In the stacked capacitor, the step is severe, and in the trench capacitor, leakage current between the trenches is generated. Therefore, the application of the above two methods is limited in the highly integrated memory of 1Gbit or more. Therefore, a method of forming a capacitor of a DRAM cell using a third method has been studied. As the high dielectric materials, BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), and PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ), and the like. However, in order to form such a high dielectric material, a material having high reactivity including oxygen should be used, and the formation temperature should be higher than 400 ° C. On the other hand, aluminum is commonly used as the lower electrode of the capacitor. If the above-mentioned high dielectric material is used as the dielectric material, the electrode is not oxidized and stable at a high temperature of 400 ° C. or higher during the formation of the high dielectric material electrode. You will not be able to act as. Therefore, in a DRAM cell using a high dielectric material, platinum which is stable at high temperature is used as an electrode material instead of aluminum.

In addition to DRAM cells, BT (BaTiO ₃ ), PT (PbTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃₎ ), PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ) or SBTO (SrBi ₂ Ta ₂ O ₉ ), which is the lower electrode of platinum. have. Such ferroelectric oxide thin films are known to have the best properties required for each device when they are oriented in the c-axis. For this purpose, it is advantageous for the platinum thin film, which is a lower electrode, to have a (200) preferred orientation. That is, in order to control the characteristics of the ferroelectric oxide thin film, the orientation of the platinum thin film as the lower electrode should be controlled.

On the other hand, the preferred orientation of the platinum thin film formed by the conventional method is (111). Conventional methods for forming a (111) orientation into a platinum thin film having a (200) preferential orientation include (200) of materials such as MgO, NaCl, KBr, SrTiO ₃ , LaAlO ₃ with a lattice constant similar to that of platinum. There is a method of forming a platinum thin film on a single crystal substrate. However, this method is complex, has a high cost of single crystal substrates, and is incompatible with the well-developed silicon integrated circuit manufacturing technology to date, and is applicable to the manufacture of nonvolatile ferroelectric memory devices, sensors, and actuator devices. The disadvantage is that it is difficult to do.

In addition, the platinum thin film formed by the conventional method is not good adhesion to the substrate, the film is not dense, pinholes or pores, or heellocks are often generated. The above problems are due to the deposition of a platinum thin film under an atmosphere containing oxygen proposed in patent applications 94-31618 (Nov. 26, 1994) and patent application 95-40450 (1995. 11.8) filed by the applicant of the present application. Mostly solved by the concept of. The present applicant also proposed a method of forming a platinum thin film having a (200) preferred orientation by depositing a platinum thin film in an oxygen-containing atmosphere in Patent Application No. 96-7663 (March 21, 1996). In addition, the applicant of the present invention, by depositing a platinum thin film in an atmosphere containing a nitrogen component in the present application, a method of freely adjusting the preferred orientation of the platinum thin film not only (200) but also (111) or both orientations are mixed. Invented.

It is an object of the present invention to provide a method for producing a platinum thin film whose orientation can be controlled and a platinum thin film formed by the method.

Still another object of the present invention is to provide a method for manufacturing an electronic device having a platinum thin film whose orientation can be controlled, and an electronic device formed thereby.

1A-1C illustrate a manufacturing step of an electronic device having a platinum thin film deposited in a nitrogen atmosphere according to one aspect of the present invention.

2 is a modification of FIGS. 1A-1C.

3A to 3D show a manufacturing step of an electronic device having a platinum thin film deposited in two steps in a nitrogen atmosphere according to another aspect of the present invention.

4 is a modification of FIGS. 3A to 3D.

5A to 5M show XRD patterns according to the first to thirteenth embodiments of the present invention.

6A to 6C are enlarged photographs of the surface of the platinum thin film formed according to the second embodiment of the present invention and the conventional method, respectively.

According to one aspect of the present invention, a method for forming a platinum thin film on a substrate (meaning a surface material on which a platinum thin film is formed) for achieving the object of the present invention, nitrogen in the argon which is an inert gas on the upper surface of the substrate Depositing platinum in the atmosphere to form a platinum thin film containing a nitrogen component, and heat treating the platinum thin film including the nitrogen component to form a pure platinum thin film from which the nitrogen component is removed. Adjust the orientation of the platinum thin film. Here, the orientation of the platinum thin film is controlled by at least one of the partial pressure ratio of the nitrogen component to the total gas including the inert gas and the nitrogen component, the temperature of the substrate during deposition, and the heat treatment conditions.

According to another aspect of the present invention, a method for forming a platinum thin film includes depositing a platinum thin film containing impurities on an upper surface of a substrate in three or more steps, in which the first step is to deposit a film of a first thickness in an inert gas atmosphere and the second step is to A nitrogen component is used together with an inert gas to deposit a second thickness of the film, and in each of the remaining steps, an inert gas or a mixture of inert gas and nitrogen is used to deposit a third thickness film, and the nitrogen component is included. And heat treating the platinum thin film to form a pure platinum thin film from which the nitrogen component has been removed, wherein the orientation of the platinum thin film is a partial pressure ratio of the nitrogen component to the total gas including the nitrogen component and the inert gas, and the deposition. It is controlled by at least one of the substrate temperature at the time, the heat treatment condition and the first thickness. The first thickness is a thickness that can prevent the diffusion of oxygen components in a subsequent process after forming the platinum thin film, and preferably, the first thickness is about 5 of the total thickness of the first thickness to the third thickness. To about 50%.

According to another aspect of the present invention, the platinum thin film may be deposited in two steps, in which the first step deposits a film of a first thickness in an inert gas atmosphere, and in the second step, a nitrogen component is used together with an inert gas to form a second film. In this case, as in the case of three or more steps of deposition, the first thickness is a thickness that can prevent the diffusion of oxygen components in a subsequent process after the platinum thin film formation, and preferably, the first thickness is It is about 5-50% of the total thickness of the sum of the first thickness and the second thickness.

Meanwhile, when insulation between the electronic device including the platinum thin film and the substrate is required, the method may further include forming an insulating layer on the upper surface of the substrate before deposition of the platinum thin film. In addition, a conductive diffusion barrier layer or an adhesive layer such as TiN may be formed between the platinum thin film and the substrate.

The platinum thin film deposition method may be any one selected from the group consisting of DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, and laser deposition.

A method of manufacturing an electronic device having a platinum thin film for achieving another object of the present invention includes forming a highly dielectric thin film on an upper surface of the platinum thin film after manufacturing the platinum thin film by a single step and a multi-step.

On the other hand, the substrate is selected from the group consisting of single crystals of silicon, diamond, MgO, SrTiO ₃ , KBr, NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN and their polycrystals Any one, any one of these amorphous, any one selected from the group consisting of metals of Ti, Au, Ag, Al, Ta, Ir, Pt, Cu, Pd, Ru, W, or RuO ₂ , IrO ₂ , ITO, Any one selected from the group consisting of conductive compounds of ZnO, LSCO, YBCO, TiN, TiW is used. The highly dielectric thin films are BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), PLZT (Pb _{1 -X} La _X Zr _1-Y Ti _Y O ₃ ), BT (BaTiO ₃ ), PT (PbTiO ₃ ) Any one selected from the group consisting of can be used.

In addition, an electronic device having a platinum thin film and a platinum thin film for achieving the object of the present invention is obtained by the above-described method, thereby facilitating the design of an electronic device having a platinum thin film requiring specific properties.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and examples.

1A-1C illustrate a manufacturing step of an electronic device having a platinum thin film deposited according to one aspect of the present invention. In FIG. 1A, a platinum thin film 104 is deposited on the upper surface of the substrate 100. At this time, the deposition condition is an inert gas (Ar, Xe, Kr, etc.) as an argon gas and an atmosphere in which nitrogen is added thereto, and during deposition. Substrate temperature is 700 ℃ at room temperature. Therefore, the platinum thin film 104 contains a nitrogen component. Here, the substrate means a surface on which the platinum thin film is to be formed. In FIG. 1B, the platinum thin film 104 formed on the substrate 100 is heat treated at 400 to 1000 ° C., resulting in a pure platinum thin film 108 from which nitrogen components have been removed. In order to use the pure platinum thin film as a lower electrode in a DRAM cell or a nonvolatile ferroelectric memory cell, as shown in FIG. 1C, a high dielectric or ferroelectric oxide film 112 is formed on the pure platinum thin film 108. Although not shown in the drawings, an upper electrode formed of the same material as the lower electrode or another conductive material is formed on the upper surface of the high dielectric or ferroelectric oxide film 112 to form an electronic device such as a capacitor.

The orientation of the platinum thin film formed by the above method is controlled by at least one of the partial pressure ratio of the nitrogen component to the total gas including the argon gas and the nitrogen component, the temperature of the substrate during deposition, and the heat treatment conditions.

Here, the platinum thin film is deposited using any one of DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, and laser ablation. The substrate 100 is selected from the group consisting of single crystals of silicon, diamond, MgO, SrTiO ₃ , KBr, NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN and their polycrystals. Any one selected, any one selected from the group consisting of amorphous materials of the above-mentioned materials, any one selected from the group consisting of metals of Ti, Au, Ag, Al, Ta, Ir, Pt, Cu, Pd, Ru, W, or Any one selected from the group consisting of conductive compounds of RuO ₂ , IrO ₂ , ITO, ZnO, LSCO, YBCO, TiN, TiW can be used. In addition, the highly dielectric or ferroelectric thin film is BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), Any one selected from the group consisting of PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ), BT (BaTiO ₃ ), PT (Pb _1-X La _X TiO ₃ ) may be used.

Especially when any one of Ti, Ta, TiN, TiW is used as the substrate, patent applications 94-31618 (Nov. 26, 1994), patent applications 95-40450 (1995. 11.8) and 96-7663 (1996. 3) The oxide insulating layer is not formed between the platinum thin film and the substrate composed of Ti, which is a problem that may occur when the platinum thin film is deposited under the oxygen atmosphere proposed in 21).

FIG. 2 is a modification of the manufacturing steps of FIGS. 1A-1C. FIG. 2 illustrates a case where an insulating layer 124 such as SiO ₂ , Si ₃ N ₄ is formed between the substrate 100 and the electronic device to be formed on the substrate 100. The platinum thin film 108 formed on the upper surface of the insulating layer 124 is deposited and heat treated in the nitrogen atmosphere of FIG. 1A. Also in this case, the orientation of the platinum thin film is controlled by at least one of the partial pressure ratio of the nitrogen component to the total gas including the argon gas and the nitrogen component, the temperature of the substrate during deposition and the heat treatment conditions, and the substrate material and the ferroelectric oxide film material. And the same deposition method as that of Figs. 1A to 1C is used.

3A-3D show steps for fabricating an electronic device having a platinum thin film deposited according to another aspect. In FIG. 3A, a first platinum thin film 304 is formed on the upper surface of the substrate 300. The first platinum thin film 304 is deposited in an argon gas atmosphere which is an inert gas. In FIG. 3B, a second platinum thin film 308 deposited on an upper surface of the first platinum thin film 304 in an atmosphere in which argon gas contains nitrogen is formed. Next, after the subsequent heat treatment in FIG. 3C, the nitrogen component present in the second platinum thin film 308 is removed to form a pure platinum foil 312. Thereafter, as shown in FIG. 1C, a high dielectric or ferroelectric oxide film 316 is formed on the top surface of the platinum thin film 312, and an upper electrode formed of the same material as the lower electrode or another conductive material is formed on the top surface of the high dielectric or ferroelectric oxide film 316. To form an electronic device such as a capacitor.

FIG. 4 illustrates a modified example of FIGS. 3A to 3D, and further includes an insulating layer 320 to insulate the substrate 300 and the electronic device having the platinum thin film as shown in FIG. 2.

In FIGS. 3A to 3D and 4, only the deposition of the platinum thin film in two steps has been described. However, the present invention is not limited thereto and may be deposited in three or more steps. When depositing in three or more stages, the first thickness of the platinum thin film is formed using only argon which is an inert gas, and the second thickness of the platinum thin film is deposited using argon gas and nitrogen in the second step. In each of the steps, an inert gas or a mixed component of inert gas and nitrogen may be used to deposit a third thin film of platinum.

The invention is illustrated with specific examples in order to demonstrate the benefits and effects of the invention.

Example 1

An insulating layer of SiO ₂ is formed on the silicon substrate, and a platinum thin film is deposited in an atmosphere containing nitrogen on the upper surface of the insulating layer.

Deposition Method: DC Magnetron Sputtering

Atmosphere gas: Nitrogen gas partial pressure ratio to total (argon + nitrogen): 10%

Substrate temperature during deposition: room temperature

Substrate temperature and time during heat treatment: 650 ° C., 1 hour

As shown in FIG. 5A, the platinum thin film under the condition of Example 1 is mixed with (111) and (200) orientations.

Example 2

Except for changing the substrate temperature to 300 ° C., the remaining conditions are the same as in the first embodiment.

As shown in Fig. 5B, the platinum thin film has a (200) preferred orientation.

Example 3

The conditions of Example 1 were the same except that the substrate temperature was changed to 500 ° C.

The platinum thin film has a (111) preferred orientation as shown in Fig. 5C.

Example 4

An insulating layer of SiO ₂ is formed on the silicon substrate, and a platinum thin film is deposited in an atmosphere containing nitrogen on the upper surface of the insulating layer.

Deposition Method: DC Magnetron Sputtering

Atmosphere gas: Nitrogen gas partial pressure ratio to total: 5%

Substrate temperature at the time of vapor deposition: 300 degreeC

Substrate temperature and time during heat treatment: 650 ° C., 1 hour

The platinum thin film deposited under the above conditions has a (111) preferential orientation as shown in FIG. 5D.

Example 5

The conditions were the same as in Example 4 except that the nitrogen partial pressure ratio was changed to 20%.

A platinum thin film deposited under the above conditions is shown in Fig. 5E. The platinum thin film has a mixture of (111) and (200) orientations.

Example 6

An insulating layer of SiO ₂ is formed on the silicon substrate, and a platinum thin film is deposited in an atmosphere containing nitrogen on the upper surface of the insulating layer.

Deposition Method: DC Magnetron Sputtering

Atmosphere gas: Nitrogen gas partial pressure ratio to total: 10%

Substrate temperature at the time of vapor deposition: 300 degreeC

Substrate temperature and time during heat treatment: 1000 ° C., 1 hour

By changing the conditions of the heat treatment in Example 2, it can be seen that the platinum thin film having a (200) preferential orientation is formed as shown in FIG. 5F.

Example 7

The present invention relates to a case where TiN is used as a substrate material directly below a platinum thin film, and a polysilicon and a TiN layer are sequentially formed on a silicon wafer, and a platinum thin film is deposited thereon in a nitrogen atmosphere.

Deposition Method: DC Magnetron Sputtering

Atmosphere gas: Nitrogen gas partial pressure ratio to total: 5%

Substrate temperature at the time of vapor deposition: 300 degreeC

Substrate temperature and time during heat treatment: 650 ° C., 1 hour

A platinum thin film deposited under the above conditions is shown in Fig. 5g. The platinum thin film has a (111) preferential orientation.

Example 8

The conditions of Example 7 were the same except that the nitrogen pressure ratio was increased to 10%. A platinum thin film deposited under the above conditions is shown in Fig. 5h. The platinum thin film has a (200) preferred orientation.

Example 9

The conditions of Example 7 were the same except that the nitrogen pressure ratio was increased to 20%. The platinum thin film deposited under the above conditions is mixed with the (111) and (200) orientations as shown in FIG. 5I.

Example 10

The conditions were the same as those in Example 7, except that the heat treatment was performed at 600 ° C. for 1 hour after vacuum.

The platinum thin film deposited under the above conditions has a (111) preferential orientation, as shown in FIG. 5J.

Example 11

After polysilicon was formed on the silicon wafer, TiN was formed as a conductive diffusion barrier layer thereon, and the platinum thin film was deposited at 2000 Pa in two steps.

Deposition Method: DC Magnetron Sputtering

Step 1-Deposition Atmosphere: Ar

Substrate temperature: 300 ℃

1st deposition thickness: 600Å (600/2000 × 100% = 30%)

Stage 2-Deposition atmosphere: Ar + N ₂ (partial pressure ratio of N ₂ : 6%)

Substrate temperature: 300 ℃

2nd deposition thickness: 1400Å (1400/2000 × 100% = 70%)

Heat treatment condition: 5 × 10 ^-6 Torr vacuum at 600 ° C for 1 hour

As shown in Fig. 5K, the (111) orientation is shown.

Example 12

In the second stage deposition, the partial pressure ratio of N ₂ was increased to 12%, the first deposition thickness was 100 mW (100/2000 × 100% = 5%), and the second deposition thickness was 1900 mW (1900/2000 × 100% = 95% ) And the same conditions as in Example 11 except that the substrate temperature is 200 ° C. This case has a (200) orientation as shown in FIG. 5L.

Example 13

The conditions other than Example 12 were the same except that the partial pressure ratio of N ₂ was increased to 14% in the second step deposition and the substrate temperature was increased to 250 ° C., as shown in FIG. 5M (200) and (111). Orientation is mixed.

Meanwhile, in the case of two-stage deposition, the embodiment of the present invention is limited to the case where the lower layer of the platinum thin film is a conductive layer. However, the present invention is not limited thereto. This may be formed.

6B and 6C show a 5000 times magnified photograph of a platinum thin film formed according to the prior art in an argon atmosphere, each of which shows Hillock and pores. Figure 6a is a photograph enlarged by 10,000 times the platinum thin film according to the second embodiment of the present invention, it can be seen that the hillock is not formed. The platinum thin film formed by another embodiment shows the same aspect. That is, the platinum thin film formed according to the present invention has a dense structure without the phenomenon such as hillock, pores, buckling than the platinum thin film formed by the conventional method in addition to the orientation is controlled.

From the above embodiments, when forming a platinum thin film using silicon as the substrate material and via the insulating layer, or when the substrate material under the platinum thin film is TiN, the present invention is applied on the substrate material without the insulating layer. Therefore, when forming the platinum thin film, it can be seen that the orientation of the platinum thin film can be adjusted by adjusting at least one of a nitrogen pressure ratio, a substrate temperature during deposition, a post-heat treatment condition, and a first deposition thickness during multi-step deposition.

In particular, an oxide insulating layer formed on the TiN layer when using the conventional method does not occur in the deposition process of the platinum thin film of the present invention. This can be seen by measuring the contact resistance of the platinum thin film or viewing the cross-sectional view of the platinum thin film after depositing and heat-treating the thin film using a mask during deposition of the platinum thin film. In addition, the buckling phenomenon due to N ₂ occurring during oxidation of TiN does not occur.

At least any one of the partial pressure ratio of the nitrogen component to the total gas, the deposition temperature, the heat treatment conditions, and the thickness of the first platinum thin film, wherein the orientation of the platinum thin film formed on the substrate is the sum of the inert gas and the nitrogen gas used in the deposition of the platinum thin film. Since it can be controlled by one, the platinum thin film can be formed to have specific characteristics required for a specific electronic device. Further, even if a platinum thin film is deposited on the Ti, Ta, TiN, or TiW film, and a process using oxygen later, an oxide layer is not formed between the Ti, Ta, TiN or TiW film and the platinum thin film.

Claims (79)

In the method for producing a platinum thin film on a substrate, Depositing platinum in an atmosphere containing nitrogen in an inert gas on an upper surface of the substrate to form a platinum thin film including nitrogen; And heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed. The method of claim 1, wherein the orientation of the platinum thin film is controlled by at least one of a partial pressure ratio of the nitrogen component to the total gas including the inert gas and the nitrogen component, the temperature of the substrate during deposition, and the heat treatment condition. Platinum thin film production method characterized in that. The method of claim 1, wherein the inert gas is argon. The method of claim 2, wherein the inert gas is argon. The method of claim 1, further comprising forming an insulating layer on an upper surface of the substrate before deposition of the platinum thin film. 5. The method of claim 4, further comprising forming an insulating layer on an upper surface of the substrate before deposition of the platinum thin film. 7. The method of claim 6, wherein the platinum thin film deposition conditions include a partial pressure ratio of the nitrogen component to the total gas, a temperature of the substrate during deposition, and a heat treatment condition of about 5 to 20%, about 300 to 500 ° C, respectively. Platinum thin film production method characterized in that 1 hour at 650 to 1000 ℃. 5. The method of claim 4, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. The method of claim 8, wherein the conductive layer is any one selected from the group consisting of Ti, TiN, TiW, and Ta. 10. The method of claim 9, wherein the conductive layer is TiN, and the partial pressure ratio of the nitrogen component to the total gas, the temperature of the substrate during deposition and the heat treatment conditions are about 5 to 20%, about 300 to 500 ° C., respectively. Platinum thin film production method characterized in that 1 hour at 650 to 1000 ℃. The method of any one of claims 1 to 10, wherein the platinum thin film deposition method is any one selected from the group consisting of DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, and laser deposition. A platinum thin film manufacturing method characterized by the above-mentioned. A platinum thin film prepared by the method of any one of claims 1 to 11. Providing a substrate, Depositing platinum in an atmosphere containing nitrogen in an inert gas on an upper surface of the substrate to form a platinum thin film including nitrogen; Heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed; and Forming a high dielectric or ferroelectric thin film on the upper surface of the platinum thin film. The method of claim 13, wherein the orientation of the platinum thin film is controlled by at least one of a partial pressure ratio of the nitrogen component to the total gas including the inert gas and the nitrogen component, a temperature of the substrate during deposition, and heat treatment conditions. The manufacturing method of the electronic device characterized by the above-mentioned. The method of claim 13, wherein the inert gas is argon. The method of claim 14, wherein the inert gas is argon. The single crystal of claim 13, wherein the substrate is silicon, diamond, MgO, SrTiO ₃ , KBr, NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN and polycrystals thereof. Method of manufacturing an electronic device, characterized in that any one selected from the group consisting of. The method of claim 16, wherein the substrate is selected from the group consisting of amorphous silicon, diamond, MgO, SrTiO ₃ , KBr, NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN. Method for manufacturing an electronic device, characterized in that any one. The method of claim 13, wherein the substrate is any one selected from the group consisting of Ti, Au, Ag, Al, Ta, Ir, Pt, Cu, Pd, Ru, and W. 15. The method of claim 13, wherein the substrate is any one selected from the group consisting of conductive compounds of RuO ₂ , IrO ₂ , ITO, ZnO, LSCO, YBCO, TiN, and TiW. The method of claim 13, wherein the highly dielectric thin film is BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ), BT (BaTiO ₃ ), PT (PbTiO ₃ ) A method for manufacturing an electronic device, characterized in that any one selected from the group consisting of. The method of claim 13, further comprising forming an insulating layer between the substrate and the platinum thin film. The method of claim 16, further comprising forming an insulating layer between the substrate and the platinum thin film. 24. The method of claim 23, wherein the platinum thin film deposition conditions include a partial pressure ratio of the nitrogen component to the total gas, a temperature of the substrate during deposition, and a heat treatment condition of about 5 to 20%, about room temperature to 300 ° C, respectively. Electronic device manufacturing method having a platinum thin film, characterized in that 1 hour at 650 to 1000 ℃. The method of claim 13, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. The method of claim 16, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. 27. The method of claim 26, wherein the conductive layer is any one selected from the group consisting of Ti, TiN, TiW, and Ta. 28. The method of claim 27, wherein the conductive layer is TiN, and the partial pressure ratio of the nitrogen component to the total gas, the temperature of the substrate during deposition, and the heat treatment conditions are about 5 to 20%, about 300 ° C, and about 600 to, respectively. Electronic device manufacturing method comprising a platinum thin film, characterized in that 1 hour at 650 ℃. 29. The method of any one of claims 13 to 28, wherein the platinum thin film deposition method is any one of a group consisting of DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, and laser deposition. A method of forming an electronic device. 30. An electronic device made by any of claims 13-29. Depositing a platinum thin film containing impurities on the upper surface of the substrate in three or more multi-steps, wherein the first step deposits the first thickness film in an inert gas atmosphere, and the second step uses a nitrogen component together with the inert gas to form the second thickness film. Depositing and in each of the remaining steps, an inert gas or a mixed component of inert gas and nitrogen is used to deposit a platinum thin film of a third thickness, and And heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed. A platinum thin film containing impurities is deposited on the upper surface of the substrate in two steps. In the first step, a film of a first thickness is deposited in an inert gas atmosphere. In the second step, a nitrogen component is used together with an inert gas to deposit a film of a second thickness. Steps, and And heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed. 32. The method of claim 31, wherein the first thickness is a thickness that can prevent oxygen components from diffusing during a subsequent process after the platinum thin film is formed. 33. The method of claim 32, wherein the first thickness is a thickness capable of preventing the diffusion of oxygen components in a subsequent process after the platinum thin film is formed. 34. The method of claim 33, wherein the first thickness is about 5 to 50% of the total thickness of the first to third thicknesses. 35. The method of claim 34, wherein the first thickness is about 5-50% of the total thickness of the first thickness and the second thickness. The orientation of the platinum thin film according to claim 31, wherein at least one of the partial pressure ratio of the nitrogen component to the total gas including the nitrogen component and the inert gas, the substrate temperature at the time of deposition, the heat treatment condition, and the first thickness. Platinum thin film manufacturing method characterized in that controlled by. 33. The method of claim 32, wherein the platinum thin film has at least one of a partial pressure ratio of the nitrogen component to the total gas including the nitrogen component and the inert gas, a substrate temperature during deposition, a heat treatment condition, and the first thickness. Platinum thin film manufacturing method characterized in that controlled by. 32. The method of claim 31 wherein the inert gas is argon. 33. The method of claim 32, wherein the inert gas is argon. 38. The method of claim 37, wherein the inert gas is argon. The method of claim 38, wherein the inert gas is argon. 32. The method of claim 31, further comprising forming an insulating layer on an upper surface of the substrate before deposition of the platinum thin film. 32. The method of claim 31, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. 43. The method of claim 42, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. 46. The method of claim 45, wherein the conductive layer is any one selected from the group consisting of Ti, TiN, TiW, and Ta. 47. The method of claim 46, wherein the conductive layer is TiN, and the partial pressure ratio of the nitrogen component to the total gas including the argon gas and the nitrogen component, the substrate temperature at the time of deposition, the heat treatment conditions, and the total thickness of the first thickness are calculated. A method for producing a platinum thin film, wherein the thickness is 1 hour at about 6 to 14%, about 200 to 300 ° C, and about 600 ° C, respectively. 48. The method of any one of claims 31 to 47, wherein the deposition method of the first and second steps of the platinum thin film is performed by DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, Platinum thin film manufacturing method characterized in that any one of the group consisting of laser deposition method. 49. A platinum thin film prepared by the method of any one of claims 31-48. Providing a substrate, Depositing a platinum thin film containing a nitrogen component on the upper surface of the substrate in three or more multi-steps, wherein the first step deposits a film of a first thickness in an inert gas atmosphere, and the second step uses a nitrogen component together with an inert gas in a second step. Depositing a film of and depositing a third thin film of platinum using an inert gas or a mixture of inert gas and nitrogen in each of the remaining steps, Heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed; and Forming a high dielectric or ferroelectric thin film on the upper surface of the platinum thin film. Providing a substrate, Depositing a platinum thin film containing nitrogen on the upper surface of the substrate in two steps, in which the first step deposits a film of a first thickness in an inert gas atmosphere, and the second step uses a nitrogen component together with an inert gas to form a second Depositing a film, Heat treating the platinum thin film containing the nitrogen component to form a pure platinum thin film from which the nitrogen component has been removed; and Forming a high dielectric or ferroelectric thin film on the upper surface of the platinum thin film. 51. The method of claim 50, wherein the first thickness is a thickness that can prevent oxygen components from diffusing during a subsequent process after the platinum thin film is formed. 52. The method of claim 51, wherein the first thickness is a thickness capable of preventing the diffusion of oxygen components in a subsequent process after the platinum thin film is formed. 53. The method of claim 52, wherein the first thickness is about 5-50% of the total thickness of the first to third thicknesses. 54. The method of claim 53, wherein the first thickness is about 5 to 50% of the total thickness of the first and second thicknesses. 51. The method of claim 50, wherein the orientation of the platinum thin film is at least one of a partial pressure ratio of the nitrogen component to the total gas including the nitrogen component and the inert gas, a substrate temperature during deposition, a heat treatment condition, and the first thickness. Method of manufacturing an electronic device, characterized in that controlled by. The orientation of the platinum thin film according to claim 51, wherein at least one of the partial pressure ratio of the nitrogen component to the total gas including the nitrogen component and the inert gas, the substrate temperature at the time of deposition, the heat treatment condition, and the first thickness Method of manufacturing an electronic device, characterized in that controlled by. 51. The method of claim 50, wherein the inert gas is argon. 52. The method of claim 51, wherein the inert gas is argon. The method of claim 56, wherein the inert gas is argon. 59. The method of claim 57, wherein the inert gas is argon. 51. The method of claim 50, further comprising forming an insulating layer between the substrate and the platinum thin film. 63. The method of claim 61, further comprising forming an insulating layer between the substrate and the platinum thin film. 51. The method of claim 50, wherein the substrate comprises silicon, diamond, MgO, SrTiO ₃ , NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN single crystals and polycrystals thereof. Method of manufacturing an electronic device, characterized in that any one selected from the group. 62. The method of claim 61, wherein the substrate is composed of silicon, diamond, MgO, SrTiO ₃ , NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN and single crystals thereof. Method of manufacturing an electronic device, characterized in that any one selected from the group. 51. The method of claim 50, wherein the substrate is any one of a group consisting of amorphous silicon, diamond, MgO, SrTiO ₃ , NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN Method for producing an electronic device, characterized in that. 62. The method of claim 61, wherein the substrate is any one of a group consisting of amorphous silicon, diamond, MgO, SrTiO ₃ , NaCl, Al ₂ O ₃ , ZrO ₂ , Si ₃ N ₄ , TiO ₂ , Ta ₂ O ₅ , AlN Method for producing an electronic device, characterized in that. 51. The method of claim 50, wherein the substrate is any one selected from the group consisting of Au, Ag, Al, Ir, Pt, Cu, Pd, Ru, W. 63. The method of claim 61, wherein the substrate is any one selected from the group consisting of Au, Ag, Al, Ir, Pt, Cu, Pd, Ru, and W. 51. The method of claim 50, wherein the substrate is any one selected from the group consisting of RuO ₂ , IrO ₂ , ITO, ZnO, LSCO, YBCO. The method of claim 61, wherein the substrate is any one selected from the group consisting of RuO ₂ , IrO ₂ , ITO, ZnO, LSCO, and YBCO. 51. The method of claim 50, wherein the highly dielectric or ferroelectric thin film is BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ), BT (BaTiO ₃ ), PT (PbTiO ₃ ) A method of manufacturing an electronic device characterized in that any one selected from the group consisting of. . 63. The method of claim 61, wherein the highly dielectric or ferroelectric thin film is BST (Ba _1-X Sr _X TiO ₃ ), ST (SrTiO ₃ ), PZT (PbZr _1-X Ti _X O ₃ ), PLT (Pb _1-X La _X TiO ₃ ), PLZT (Pb _1-X La _X Zr _1-Y Ti _Y O ₃ ), BT (BaTiO ₃ ), PT (PbTiO ₃ ) A method of manufacturing an electronic device characterized in that any one selected from the group consisting of. . 51. The method of claim 50, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. 62. The method of claim 61, further comprising forming a conductive layer on an upper surface of the substrate before deposition of the platinum thin film. 76. The method of claim 75, wherein the conductive layer is any one selected from the group consisting of Ti, TiN, TiW, and Ta. 77. The method of claim 76, wherein the conductive layer is TiN, and the partial pressure ratio of the nitrogen component to the total gas including the argon gas and the nitrogen component, the substrate temperature at the time of deposition, the heat treatment condition, and the first thickness relative to the total thickness. A thickness of about 6 to 14%, about 200 to 300 ° C, about 600 ° C for about 1 hour and about 5 to 30%, respectively. 78. The method according to any one of claims 50 to 77, wherein the platinum thin film forming method is any one of a group consisting of DC magnetron sputtering, RF magnetron sputtering, organometallic chemical vapor deposition, ion beam sputtering, vacuum deposition, and laser deposition. Electronic device manufacturing method. 79. An electronic device manufactured by the method of any one of claims 50-78.