KR102542229B1 - Light emitting device and light emitting device including the same - Google Patents

Abstract

The present invention relates to a light emitting device, and includes a light emitting structure including a substrate, a first conductivity type semiconductor layer disposed on the substrate, an active layer and a second conductivity type semiconductor layer, wherein the substrate is disposed on the substrate at a predetermined interval. Includes a plurality of patterns spaced apart from each other, wherein the plurality of patterns include a recessed portion provided to sink to a first height, and the recessed portion includes at least one protrusion provided to protrude from one surface of the substrate to a second height is a light emitting device.

Description

Light emitting device and light emitting device package including the same {LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

The embodiment relates to a light emitting device and a light emitting device package including the same.

Light emitting devices such as light emitting diodes or laser diodes using group ⅢⅢ-ⅤⅤ group or ⅡⅡ-ⅥⅥ compound semiconductor materials of semiconductors have been developed in thin film growth technology and device materials to produce various colors such as red, green, blue, and ultraviolet. can be implemented. In addition, the light emitting element can realize white light with high efficiency by combining colors using fluorescent materials, and has advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lights. have

Therefore, a light emitting diode backlight that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD: Liquid Crystal Display), and a fluorescent lamp or an incandescent bulb that can be replaced The application of light emitting devices is expanding to white light emitting diode lighting devices, automobile headlights and signals.

In the light emitting device, a buffer layer may be formed on a sapphire substrate, and an undoped GaN layer and an n-GaN layer may be sequentially disposed thereon.

An active layer formed as a single or multiple quantum well structure on the n-GaN layer to emit light, and a p-GaN layer may be sequentially stacked on the active layer.

The formation method of each layer is electron beam evaporation, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), PLD (Plasma Laser Deposition), dual-type thermal evaporator, sputtering, MOCVD (Metal Organic Chemical Vapor Deposition), etc.

This light emitting device has a principle of generating photons by recombination of electrons and holes in the active layer 19 between P/N bonds.

When the light emitting device is provided in a flip chip structure, the upper and lower surfaces of the light emitting device described above are mounted in an inverted state.

At this time, the substrate is located on the uppermost surface and the light generated from the active layer moves to the outside through the upper substrate.

Conventional flip-chip type light emitting devices use methods such as patterning, etching, and roughing to form patterns on the substrate in order to improve light extraction efficiency.

However, the conventional methods have a problem in that the process is increased using a chemical solution and the production efficiency is lowered.

In addition, since the chemical reaction is used, there is a problem in that the degree of freedom of the pattern formed on the substrate is low.

In addition, as a process using a chemical solution is added, there is a problem in that a harmful risk occurs to the human body when a worker works.

An object of the present invention is to provide a light emitting device that prevents the problem of reducing production efficiency due to an increase in the process using a chemical solution in forming a pattern on a substrate.

In addition, it is a task to be solved to provide a light emitting device that prevents the degree of freedom of a pattern formed on a substrate from being lowered due to the use of a chemical reaction.

In addition, as a process using a chemical solution is added, it is a task to solve the problem of providing a light emitting device that prevents harmful risks to the human body when a worker works.

In order to solve the above problems, the present invention includes a light emitting structure including a substrate and a first conductivity type semiconductor layer disposed on the substrate, an active layer and a second conductivity type semiconductor layer, wherein the substrate is directed toward the light emitting structure. A first region including a first surface and a second surface facing the first surface, wherein a plurality of patterns are disposed on the second surface of the substrate, and at least one of the plurality of patterns is submerged by a first height. As a means for solving the problem, providing a light emitting device including a second region disposed around the first region and protruding by a second height is provided.

In addition, the plurality of patterns may include a plurality of first patterns disposed to be spaced apart by a first distance along a first direction and a plurality of second patterns disposed to be spaced apart by a second distance along a second direction perpendicular to the first direction. A solution to the problem is to provide a light emitting element containing ;.

In addition, as a means for solving the problem, the plurality of patterns is to provide a light emitting device that is a plurality of third patterns in the form of concentric circles having different radii from the center (C) of the substrate.

In addition, as a means for solving the problem, providing a plurality of fourth pattern light emitting elements having a polygonal shape having different radii from the center (C) of the substrate is the plurality of patterns.

In addition, the fourth pattern is to provide a triangular light emitting element as a solution to the problem.

In addition, the first interval and / or the second interval is to provide a light emitting device of 20㎛ to 100㎛ as a solution to the problem.

In addition, the first interval and / or the second interval is to provide a light emitting device of 50㎛ as a solution to the problem.

In addition, the recessed part includes a first inclined surface forming one surface of the recessed part and a second inclined surface forming the other surface of the recessed part, and the first inclined surface and/or the second inclined surface form a first angle with respect to one surface of the substrate. To provide a light emitting element provided to be tilted as much as possible as a solution to the problem.

In addition, the first angle is to provide a light emitting device of 10 degrees to 75 degrees as a solution to the problem.

In addition, the first angle is to provide a light emitting element of 45 degrees as a solution to the problem.

In addition, as a solution to the problem, the first inclined surface and/or the second inclined surface provide a light emitting device including roughness.

In addition, to provide a light emitting device package including a first electrode layer and a second electrode layer disposed on the package body and a light emitting device flip-bonded on the package body and electrically connected to the first electrode layer and the second electrode layer. as a means of solving problems.

The effect of the present invention is to provide a light emitting device that prevents the problem of reducing production efficiency due to an increase in the process using a chemical solution in forming a pattern on a substrate.

In addition, it is an effect of the present invention to provide a light emitting device that prevents the degree of freedom of a pattern formed on a substrate from deteriorating due to the use of a chemical reaction.

In addition, it is an effect of the invention to provide a light emitting device that prevents harmful risks to the human body when a worker works as a process using a chemical solution is added.

1 shows a light emitting device according to an embodiment.
2 illustrates an embodiment of a pattern formed on a substrate disposed on a light emitting device according to an embodiment.
Figure 3 shows another embodiment of the pattern formed on the top of the substrate disposed on the light emitting device of the embodiment.
Figure 4 shows another embodiment of the pattern formed on the top of the substrate disposed on the light emitting device of the embodiment.
5 shows a cross section taken along A-A' of a substrate disposed on a light emitting device according to an embodiment.
6 is a graph illustrating a change in light extraction efficiency according to an angle of a first inclined surface formed on a substrate disposed on a light emitting device according to an embodiment.
7 is a view showing an embodiment of a light emitting device package in which the light emitting device of the embodiment is disposed.

Hereinafter, embodiments of the present invention that can specifically realize the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case of being described as being formed on "on or under" of each element, on or under (on or under) or under) includes both elements formed by directly contacting each other or by indirectly placing one or more other elements between the two elements. In addition, when expressed as "on or under", it may include the meaning of not only the upward direction but also the downward direction based on one element.

1 illustrates a light emitting device package including a light emitting device according to an embodiment.

The light emitting device package of the embodiment shows a structure in which light emitting devices are flip-bonded.

Referring to FIG. 1 , the light emitting device LED may include a substrate 121 , a light emitting structure 123 , and first and second bumps 215A and 215B.

The substrate 121 may be formed of a material suitable for growing a semiconductor material or a carrier wafer. In addition, the substrate 121 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 121 may be a material including at least one of sapphire (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , and GaAs. Although not shown, irregularities may be formed under the substrate 121 .

The light emitting structure 123 may have a structure in which a first conductivity type semiconductor layer 123A, an active layer 123B, and a second conductivity type semiconductor layer 123C are sequentially stacked under the substrate 121 .

The first conductivity-type semiconductor layer 123A may be formed of a semiconductor compound. The first conductivity-type semiconductor layer 123A may be implemented with compound semiconductors of Groups 3-5, 2-6, and the like, and may be doped with a first conductivity-type dopant.

The light emitting structure 123 may expose a portion of the first conductivity type semiconductor layer 123A. That is, in the light emitting structure 123, portions of the second conductivity type semiconductor layer 123C, the active layer 123B, and the first conductivity type semiconductor layer 123A are etched to expose a portion of the first conductivity type semiconductor layer 123A. can In this case, an exposed surface of the first conductivity-type semiconductor layer 123A exposed by mesa etching may be positioned higher than a top surface of the active layer 123B.

A conductive clad layer (not shown) may be disposed between the active layer 123B and the first conductive semiconductor layer 123A or between the active layer 123B and the second conductive semiconductor layer 123C, The conductive cladding layer may be formed of a nitride semiconductor (eg, AlGaN).

The substrate 121 may be formed of a material suitable for growing a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ may be used.

Since the substrate 121 and the light emitting structure 123 are of different materials, the lattice mismatch is very large and the thermal expansion coefficient difference between them is very large, so dislocation that deteriorates crystallinity, melt back ( Melt-back, cracks, pits, and poor surface morphology may occur.

In order to solve the above problems, a buffer layer 215 may be formed between the substrate 121 and the light emitting structure 123 .

The light emitting structure 123 may include a first conductivity type semiconductor layer 123A, an active layer 123B, and a second conductivity type semiconductor layer 123C.

The first conductivity type semiconductor layer 123A may be implemented with a compound semiconductor such as group -V or group -VI, and may be doped with a first conductivity type dopant.

In detail, the first conductivity type semiconductor layer 123A is a semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may be formed of any one or more of materials, AlGaN, GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductivity-type semiconductor layer 123A is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, or Te. The first conductivity-type semiconductor layer 123A may be formed as a single layer or multiple layers, but is not limited thereto.

The active layer 123B is disposed between the first conductivity-type semiconductor layer 123A and the second conductivity-type semiconductor layer 123C, and has a single well structure, a multi-well structure, a single quantum well structure, or a multi-quantum well (MQW). Well) structure, a quantum dot structure, or a quantum wire structure, for example, a multi-quantum well structure.

The active layer 123B is a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs)/ It may be formed in a pair structure of one or more of AlGaAs, GaP (InGaP)/AlGaP, and InGaN/AlGaN.

The well layer may be formed of a material having an energy band gap smaller than that of the barrier layer. When the active layer 123B emits light in the green wavelength region, the active layer 123B may have a multi-quantum well structure, for example, a quantum well/quantum wall of an InGaN/AlGaN structure. In _{0 . 23} GaN/Al _{0 .} A quantum well layer/quantum wall layer pair structure of ₁ GaN structure may be a multi-quantum well structure having one or more cycles, and the quantum well may include a second conductivity-type dopant to be described later.

The second conductivity-type semiconductor layer 123C may be formed of a semiconductor compound. The second conductivity type semiconductor layer 123C may be implemented with a compound semiconductor such as group -V or group -VI, and may be doped with a second conductivity type dopant. The second conductive semiconductor layer 123C is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. For example, the second conductivity-type semiconductor layer 123C may be formed of Al _x Ga _(1-x) N. there is.

When the second conductivity type semiconductor layer 123C is a p-type semiconductor layer, the second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 123C may be formed as a single layer or multiple layers, but is not limited thereto.

In this case, the first electrode 123D is disposed between the first conductivity type semiconductor layer 123A and the first bump 125A, and the second electrode 123E is disposed between the second conductivity type semiconductor layer 123C and the second bump. (125C) can be placed between.

The first bump 125A may be disposed between the first electrode and the first electrode layer 124 . The second bump 125C may be disposed between the second electrode and the second electrode layer 126 .

The first and second electrode layers 124 and 126 may be spaced apart from each other in the x-axis direction, which is a direction perpendicular to the thickness direction of the light emitting structure 123 . Thus, the first and second electrode layers 124 and 126 are electrically isolated from each other. Each of the first and second electrode layers 124 and 126 may be made of a conductive material, for example, metal, and the embodiment is not limited to the type of material of each of the first and second electrode layers 124 and 126 .

2 illustrates an embodiment of a pattern formed on a substrate disposed on a light emitting device according to an embodiment.

Referring to FIG. 2, as described above, in order to form a pattern on a substrate of a conventional light emitting device, methods such as patterning, etching, and routing using a chemical solution are used. As a result, the process is increased or the substrate 121 ).

In this embodiment, patterns X and Y may be formed on the substrate 121 of the light emitting device by using a laser in order to solve the above problem.

The patterns (X, Y) of the embodiment may be formed on the upper surface 121A of the substrate 121, and a plurality of first patterns X1-X6 may be formed to be spaced apart by a first distance along a first direction. .

In addition, a plurality of second patterns Y1-Y5 may be formed to be spaced apart by a second distance along a second direction perpendicular to the first direction.

Six first patterns (X1-X6) are shown to be formed along the first direction, and five second patterns (Y1-Y5) are shown to be formed along the second direction, but this is an exemplary embodiment. The number of first patterns (X1-X6) and the number of second patterns (Y1-Y5) can be modified according to the needs of the user.

Also, the number of first patterns X1 to X6 and the number of second patterns Y1 to Y5 may be different from each other.

Also, the number of first patterns X1 to X6 and the number of second patterns Y1 to Y5 may be the same.

In addition, the first direction in which the first pattern (X1-X6) of the embodiment is formed and the second direction in which the second pattern (Y1-Y5) is formed are shown to be perpendicular to each other, but this is also shown in one embodiment. It is one and the first direction and the second direction may be provided to achieve a predetermined angle rather than perpendicular.

The first patterns X1 to X6 may be formed to be spaced apart from each other by a first distance, and the first distance may be 20 μm to 100 μm, for example, 50 μm.

This is because the light extraction efficiency of the light emitting device is highest when the first patterns X1 to X6 are spaced apart from each other by 50 μm.

However, the first interval may vary according to the depth at which the first patterns X1 to X6 are formed and the internal structure of the light emitting device, but does not limit the scope of the present invention.

In addition, the second patterns Y1 to Y5 may be formed to be spaced apart by a second interval, and the second interval may be 20 μm to 100 μm, for example, 50 μm.

This is because the light extraction efficiency of the light emitting device is highest when the second patterns Y1 to Y5 are spaced apart from each other by 50 μm.

However, the second interval may vary according to the depth at which the second patterns Y1-Y5 are formed and the internal structure of the light emitting device, and the scope of the present invention is not limited.

The first interval and the second interval may be equally provided.

In addition, the first interval and the second interval may be provided to be different from each other.

A depth of each of the first pattern (X1-X6) and the second pattern (Y1-Y5) may be 1 μm to 5 μm.

This is, when forming a pattern on the substrate 121 of the conventional light emitting device by using a chemical reaction, the depth of the pattern should be formed at least 5 μm to increase the light extraction efficiency, but the substrate 121 of the light emitting device of the embodiment ) Since the pattern formed on the pattern can be formed more elaborately by using a laser, the flat surface formed on the lower surface of the pattern is relatively reduced, and the first pattern (X1-X6) and the first pattern (X1-X6) Even if the two patterns (Y1-Y5) are formed to be 5 μm or less, there is an effect of increasing light extraction efficiency.

Figure 3 shows another embodiment of the pattern formed on the top of the substrate disposed on the light emitting device of the embodiment.

Referring to FIG. 3 , at least one third pattern O1 to O5 in the form of concentric circles having different radii based on the center C of the upper portion of the substrate may be included on the top of the substrate disposed on the light emitting device of the embodiment. can

In this case, the third patterns O1 to O5 may be disposed to be spaced apart by a third interval, and the third interval may be 20 μm to 100 μm, for example, the third interval may be 50 μm.

This is because the light extraction efficiency of the light emitting device is highest when the third patterns O1 to O5 are spaced apart from each other by 50 μm.

The third patterns O1 to O5 shown in FIG. 3 are illustrated to have a circular shape, but according to the user's needs, the third patterns O1 to O5 may be provided in an elliptical shape rather than a circular shape, , the third interval may be provided differently from each other.

More specifically, FIG. 3 shows that the third patterns O1 to O5 are formed at the same intervals, but the plurality of third patterns O1 extend from the center C of the substrate 121 toward the outside in the radial direction. -O5) may be provided while increasing the third interval at which the plurality of third patterns O1 to O5 are formed from the center C of the substrate 121 toward the outer side in the radial direction. 3 may be provided while the interval decreases.

Figure 4 shows another embodiment of the pattern formed on the top of the substrate disposed on the light emitting device of the embodiment.

Referring to FIG. 4, at least one fourth triangular pattern (T1-T4) having different radii based on the center (C) of the upper portion of the substrate may be included on the upper portion of the substrate disposed on the light emitting device of the embodiment. can

The fourth patterns T1 to T4 may be spaced apart from each other by a third distance.

The fourth interval may be 20 μm to 100 μm, and for example, the fourth interval may be 50 μm.

This is because the light extraction efficiency of the light emitting device is highest when the fourth patterns T1 to T4 are spaced apart from each other by 50 μm.

The fourth patterns T1-T4 shown in FIG. 4 are shown to have a triangular shape, but according to the user's needs, the fourth patterns T1-T4 may be provided with a polygonal shape rather than a triangular shape, , the fourth interval may be provided differently from each other.

More specifically, FIG. 4 shows that the fourth patterns T1 to T4 are formed at the same intervals, but the plurality of fourth patterns T1 extend from the center C of the substrate 121 toward the outside in the radial direction. -T4) may be provided while increasing the third interval at which the plurality of fourth patterns (T1-T4) are formed from the center (C) of the substrate 121 toward the outer side in the radial direction. 3 may be provided while the interval decreases.

In order to form the patterns (X, Y, O, T) shown in FIGS. 2 to 4, the wavelength of the laser irradiated to the substrate 121 of the light emitting device of the embodiment is 352 nm, and the pulse width is 10 ns to 20 ns.

In addition, the period at which the laser is irradiated to the substrate 121 may be provided with 250 kHz to 350 kHz.

If the period of the laser irradiated to the substrate 121 is provided with 250 kHz or less, it is impossible to form the patterns (X, Y, O, T) on the substrate 121, and the substrate 121 is irradiated This is because if the cycle of the laser is 350 kHz or more, damage may occur to the substrate 121 by the laser.

However, the wavelength, wavelength width, irradiation cycle, etc. of the laser are shown as an example, and can be changed as needed according to the user's needs, and do not limit the scope of the present invention.

5 shows a cross section taken along A-A′ of a substrate disposed on a light emitting device according to an embodiment, and FIG. 6 shows light extraction efficiency according to an angle of a first inclined surface formed on a substrate disposed on a light emitting device according to an embodiment. Here is a graph showing the change.

5 and 6, the pattern formed on the substrate 121 includes a first inclined surface 1211 provided to be submerged at a first height H1 from an upper surface 1215 of the substrate 121, A second inclined surface 1212 provided to correspond to the first inclined surface 1211, and a second inclined surface 1212 provided to protrude from the first inclined surface 1211 toward the upper surface 1215 of the substrate 121 at a second height H2. It may include a first protrusion 1213 and a second protrusion 1214 provided to protrude a second height H2 from the second inclined surface 1211 toward the upper surface 1215 of the substrate 121.

In other words, in the substrate 121 of the embodiment, at least one of the plurality of patterns is disposed around the first regions 1211 and 1212 and the first regions 1211 and 1212 that sink by the first height H1, and Second regions 1213 and 1214 protruding by 2 heights H2 may be included.

The first regions 1211 and 1212 may mean a space in which one surface is formed of the first inclined surface 1211 and the other surface is formed of the second inclined surface 1212 .

Also, the second regions 1213 and 1214 may have a concept including both the first protrusion 1213 and the second protrusion 1211 .

As described above, the first height H1 may be provided in a range of 1 μm to 5 μm.

The first height H1 of the first regions 1211 and 1212 may be 1 to 5 times the second height H2.

The second regions 1213 and 1214 are formed by re-solidifying fragments separated from the substrate when forming a pattern on the substrate 121 using a laser by heat, which absorbs light emitted from the light emitting device of the embodiment. This is because light extraction efficiency decreases when the first height H1 is less than one time the second height H2.

The first inclined surface 1211 may have a first angle θ1 with a reference line 1216 parallel to the top surface 1215 of the substrate 121 .

The second inclined surface 1212 may have a second angle θ2 with the reference line 1216 .

The first angle θ1 and the second angle θ2 may be provided at 10° to 75°.

More preferably, the first angle θ1 and the second angle θ2 may be provided as 45°.

This is because the light extraction efficiency of the light emitting device is maximized when the first angle θ1 and the second angle θ2 are provided as 45° as shown in the graph of FIG. 6 .

The first angle θ1 and the second angle θ2 may be provided to be the same.

When the first angle θ1 and the second angle θ2 are provided to be the same, there is an effect of allowing the amount of light to proceed uniformly without being biased to either side.

Also, the first angle θ1 and the second angle θ2 may be provided differently from each other.

If the first angle θ1 and the second angle θ2 are provided differently from each other, an amount of light traveling in one direction can be increased.

That is, the first angle θ1 and the second angle θ2 may be provided differently according to the needs of the user, and this does not limit the scope of the present invention.

The first inclined surface 1211 and/or the second inclined surface 1212 may be provided as a flat plane as shown in the drawing.

In addition, although not shown in the drawing, the first inclined surface 1211 and/or the second inclined surface 1212 may be provided to have roughness provided to protrude and sink at a predetermined height.

Since the first inclined surface 1211 and/or the second inclined surface 1212 are provided with roughness provided to protrude and sink at a predetermined height, light emitted from the active layer 123B can be more efficiently extracted. there is.

As described above, when the light emitting device having a pattern formed on one surface of the substrate 121 by laser processing is arranged in a flip chip structure in terms of light extraction effect, light is emitted from the active layer 123B disposed below the substrate 121. Since one light can be more efficiently extracted through the upper surface 121A of the substrate 121, the light extraction effect is improved, and in terms of the manufacturing process, using a laser rather than using a conventional chemical reaction on the substrate 121 There is an effect of forming a pattern more safely and elaborately.

7 is a view showing an embodiment of a light emitting device package in which a light emitting device is disposed.

In the light emitting device package 400, a first lead frame 421 and a second lead frame 422 may be disposed in a package body 410 having a cavity. Although the lead frame 422 passes through the package body 410 and is disposed, it may be disposed in a different shape.

The light emitting element 200 is electrically connected to the first lead frame 421 and the second lead frame 422 by wires 430 and disposed, and the molding part 440 is filled in the cavity, and the molding part 440 ) may include a phosphor 445 .

In the light emitting device package 400 of FIG. 7 , light of a first wavelength region, for example, light of a blue wavelength region is emitted from the light emitting device 200, and the phosphor 445 is excited by the light of the first wavelength region. Light of a longer wavelength region may be emitted, and the light of the first wavelength region and the light of the second wavelength region may be mixed to realize light of the third wavelength region, for example, white light.

A plurality of light emitting device packages according to the embodiment may be arrayed on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on a light path of the light emitting device package. The light emitting device package, substrate, and optical member may function as a backlight unit.

In addition, it may be implemented as a display device including a light emitting device package according to an embodiment, a pointing device, and a lighting device.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module emitting light, a light guide plate disposed in front of the reflector and guiding light emitted from the light emitting module forward, and a light guiding plate disposed in front of the light guide plate. An optical sheet including prism sheets disposed thereon, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, and a color filter disposed in front of the display panel. can include Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the lighting device includes a light source module including a substrate and a light emitting device package according to an embodiment, a radiator for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing it to the light source module. can include For example, the lighting device may include a lamp, a head lamp, or a street lamp.

The head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a certain direction, for example, forward, and a lens that refracts the light reflected by the reflector forward. , and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to form a light distribution pattern desired by the designer.

The light emitting device described above may be provided to emit light in an Ultra Violet (UV) wavelength band.

Ultraviolet light can be classified into three types (UVA, UVB, UVC) according to the wavelength range.

UVA is an ultraviolet ray having a wavelength range of 320 nm to 400 nm, UVB is an ultraviolet ray having a wavelength range of 290 nm to 320 nm, and UVC is an ultraviolet ray having a wavelength range of 290 nm or less.

That is, the light emitting element may be provided in a sterilization device for sterilizing bacteria included in a target object by emitting light in an ultraviolet wavelength band.

In the above, the embodiment has been described as the center (C), but this is only an example and does not limit the present invention, and those skilled in the art to which the present invention belongs will consider the above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications not exemplified are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

121: substrate 123: light emitting structure
123A: first conductivity type semiconductor layer 123B: active layer
123C: second conductivity type semiconductor layer 125A: first bumper
125C: second bumper 1211: first slope
1212: second inclined surface 1213: first protrusion
1214: second protrusion

Claims (12)

Board; and
A light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer disposed under the substrate;
The substrate includes an upper surface and a plurality of patterns provided on the upper surface at predetermined intervals,
The plurality of patterns include a recessed portion provided to be recessed from the upper surface by a first height and at least one protruding portion provided to protrude from the upper surface of the substrate by a second height,
The protruding part is disposed to contact the recessed part,
The predetermined interval is 20 μm to 100 μm,
The first height is 1㎛ to 5㎛, the light emitting element. According to claim 1,
The plurality of patterns,
a plurality of first patterns arranged to be spaced apart by a first distance along a first direction; and
A light emitting device including a plurality of second patterns arranged to be spaced apart by a second distance along a second direction perpendicular to the first direction. According to claim 1,
The plurality of patterns,
A plurality of third pattern light emitting elements in the form of concentric circles having different radii from the center of the substrate. According to claim 1,
The plurality of patterns,
A plurality of fourth patterns having a polygonal shape having different radii from the center of the substrate. According to claim 1,
The sedimentation part,
a first inclined surface forming one side of the depression; and
It includes a second inclined surface forming the other surface of the depression,
The first inclined surface and / or the second inclined surface is provided to be inclined by a first angle with a reference line parallel to the upper surface of the substrate.
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