KR102462985B1 - Novel hetero-cyclic compound and organic light emitting device comprising the same - Google Patents
Novel hetero-cyclic compound and organic light emitting device comprising the same Download PDFInfo
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- KR102462985B1 KR102462985B1 KR1020200120642A KR20200120642A KR102462985B1 KR 102462985 B1 KR102462985 B1 KR 102462985B1 KR 1020200120642 A KR1020200120642 A KR 1020200120642A KR 20200120642 A KR20200120642 A KR 20200120642A KR 102462985 B1 KR102462985 B1 KR 102462985B1
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- 150000002391 heterocyclic compounds Chemical class 0.000 title abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 254
- 239000000463 material Substances 0.000 claims description 37
- 239000011368 organic material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 129
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 112
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 111
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 108
- MXQOYLRVSVOCQT-UHFFFAOYSA-N palladium;tritert-butylphosphane Chemical compound [Pd].CC(C)(C)P(C(C)(C)C)C(C)(C)C.CC(C)(C)P(C(C)(C)C)C(C)(C)C MXQOYLRVSVOCQT-UHFFFAOYSA-N 0.000 description 104
- 238000002360 preparation method Methods 0.000 description 79
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 63
- 239000012044 organic layer Substances 0.000 description 58
- 238000006243 chemical reaction Methods 0.000 description 57
- 239000002904 solvent Substances 0.000 description 57
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 56
- 235000019341 magnesium sulphate Nutrition 0.000 description 56
- -1 hole transport Substances 0.000 description 52
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- 239000000706 filtrate Substances 0.000 description 51
- 239000012299 nitrogen atmosphere Substances 0.000 description 51
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- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 50
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- 238000002347 injection Methods 0.000 description 42
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- 229940126062 Compound A Drugs 0.000 description 32
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 32
- 230000032258 transport Effects 0.000 description 28
- 125000004432 carbon atom Chemical group C* 0.000 description 25
- 125000003118 aryl group Chemical group 0.000 description 22
- 230000005525 hole transport Effects 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
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- 125000000217 alkyl group Chemical group 0.000 description 12
- 125000001424 substituent group Chemical group 0.000 description 12
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 125000003342 alkenyl group Chemical group 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 8
- 125000000753 cycloalkyl group Chemical group 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 6
- CXNIUSPIQKWYAI-UHFFFAOYSA-N xantphos Chemical compound C=12OC3=C(P(C=4C=CC=CC=4)C=4C=CC=CC=4)C=CC=C3C(C)(C)C2=CC=CC=1P(C=1C=CC=CC=1)C1=CC=CC=C1 CXNIUSPIQKWYAI-UHFFFAOYSA-N 0.000 description 6
- SUYRGLRWMPEARP-UHFFFAOYSA-N (3-chloro-2-fluorophenyl)boronic acid Chemical compound OB(O)C1=CC=CC(Cl)=C1F SUYRGLRWMPEARP-UHFFFAOYSA-N 0.000 description 5
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- 239000010406 cathode material Substances 0.000 description 5
- 239000004927 clay Substances 0.000 description 5
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 5
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- 239000000126 substance Substances 0.000 description 5
- ROEOVWIEALGNLM-UHFFFAOYSA-N 5h-benzo[b]carbazole Chemical compound C1=CC=C2C=C3C4=CC=CC=C4NC3=CC2=C1 ROEOVWIEALGNLM-UHFFFAOYSA-N 0.000 description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 125000001072 heteroaryl group Chemical group 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- ASGMFNBUXDJWJJ-JLCFBVMHSA-N (1R,3R)-3-[[3-bromo-1-[4-(5-methyl-1,3,4-thiadiazol-2-yl)phenyl]pyrazolo[3,4-d]pyrimidin-6-yl]amino]-N,1-dimethylcyclopentane-1-carboxamide Chemical compound BrC1=NN(C2=NC(=NC=C21)N[C@H]1C[C@@](CC1)(C(=O)NC)C)C1=CC=C(C=C1)C=1SC(=NN=1)C ASGMFNBUXDJWJJ-JLCFBVMHSA-N 0.000 description 3
- UAOUIVVJBYDFKD-XKCDOFEDSA-N (1R,9R,10S,11R,12R,15S,18S,21R)-10,11,21-trihydroxy-8,8-dimethyl-14-methylidene-4-(prop-2-enylamino)-20-oxa-5-thia-3-azahexacyclo[9.7.2.112,15.01,9.02,6.012,18]henicosa-2(6),3-dien-13-one Chemical compound C([C@@H]1[C@@H](O)[C@@]23C(C1=C)=O)C[C@H]2[C@]12C(N=C(NCC=C)S4)=C4CC(C)(C)[C@H]1[C@H](O)[C@]3(O)OC2 UAOUIVVJBYDFKD-XKCDOFEDSA-N 0.000 description 3
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- 239000011591 potassium Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JLBRGNFGBDNNSF-UHFFFAOYSA-N tert-butyl(dimethyl)borane Chemical group CB(C)C(C)(C)C JLBRGNFGBDNNSF-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical group CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
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Abstract
본 발명은 신규한 헤테로 고리 화합물 및 이를 이용한 유기발광 소자를 제공한다. The present invention provides a novel heterocyclic compound and an organic light emitting device using the same.
Description
본 발명은 신규한 헤테로 고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다. In general, the organic light emitting phenomenon refers to a phenomenon in which electric energy is converted into light energy using an organic material. The organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, excellent contrast, fast response time, and excellent luminance, driving voltage, and response speed characteristics, and thus many studies are being conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물 층을 포함하는 구조를 가진다. 상기 유기물 층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다. An organic light emitting device generally has a structure including an anode and a cathode and an organic material layer between the anode and the cathode. The organic layer is often formed of a multi-layered structure composed of different materials in order to increase the efficiency and stability of the organic light-emitting device, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like. When a voltage is applied between the two electrodes in the structure of the organic light emitting device, holes are injected into the organic material layer from the anode and electrons from the cathode are injected into the organic material layer. When the injected holes and electrons meet, excitons are formed, and the excitons It lights up when it falls back to the ground state.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.The development of new materials for organic materials used in organic light emitting devices as described above is continuously required.
본 발명은 신규한 헤테로 고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다.The present invention provides a compound represented by the following formula (1).
[화학식 1][Formula 1]
상기 화학식 1에서, In Formula 1,
X1 내지 X3은 각각 독립적으로 N 또는 CR6이되, 적어도 어느 하나는 N이고, X 1 To X 3 are each independently N or CR 6 However, at least one is N,
Ar1 및 Ar2는 각각 독립적으로 치환 또는 비치환된 탄소수 6 내지 60의 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 탄소수 2 내지 60의 헤테로아릴이고, Ar 1 and Ar 2 are each independently substituted or unsubstituted aryl having 6 to 60 carbon atoms; Or a substituted or unsubstituted O, N, Si, and S is a heteroaryl having 2 to 60 carbon atoms including at least one,
R1 내지 R6은 각각 독립적으로 수소; 중수소; 할로겐; 히드록시; 니트릴; 니트로; 아미노; 치환 또는 비치환된 탄소수 2 내지 60의 알킬; 치환 또는 비치환된 탄소수 2 내지 60의 알콕시; 치환 또는 비치환된 탄소수 2 내지 60의 알케닐; 치환 또는 비치환된 탄소수 6 내지 60의 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 탄소수 2 내지 60의 헤테로아릴이고,R 1 to R 6 are each independently hydrogen; heavy hydrogen; halogen; hydroxy; nitrile; nitro; amino; substituted or
A, B, C 및 D 중 하나는 하기 화학식 1-1로 표시되는 치환기이고, 나머지는 수소 또는 중수소이고,One of A, B, C and D is a substituent represented by the following formula 1-1, and the rest is hydrogen or deuterium;
[화학식 1-1][Formula 1-1]
상기 화학식 1-1에서,In Formula 1-1,
R7 내지 R11은 각각 독립적으로 수소; 중수소; 할로겐; 히드록시; 니트릴; 니트로; 아미노; 치환 또는 비치환된 탄소수 2 내지 60의 알킬; 치환 또는 비치환된 탄소수 2 내지 60의 알콕시; 치환 또는 비치환된 탄소수 2 내지 60의 알케닐; 치환 또는 비치환된 탄소수 6 내지 60의 아릴; 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 탄소수 2 내지 60의 헤테로아릴이거나, R7 내지 R10은 서로 인접하는 기와 결합하여 축합 고리 형성하고,R 7 to R 11 are each independently hydrogen; heavy hydrogen; halogen; hydroxy; nitrile; nitro; amino; substituted or
n은 1 내지 6의 정수이다.n is an integer from 1 to 6.
또한, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다.In addition, the present invention is a first electrode; a second electrode provided to face the first electrode; and at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers includes the compound represented by Formula 1 above. do.
상술한 화학식 1로 표시되는 화합물은 유기 발광 소자의 유기물 층의 재료로서 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다. 특히, 상술한 화학식 1로 표시되는 화합물은 정공주입, 정공수송, 정공주입 및 수송, 발광, 전자수송, 또는 전자주입 재료로 사용될 수 있다.The compound represented by Chemical Formula 1 described above may be used as a material for the organic layer of the organic light emitting device, and may improve efficiency, low driving voltage and/or lifespan characteristics in the organic light emitting device. In particular, the compound represented by the above formula (1) may be used as a material for hole injection, hole transport, hole injection and transport, light emission, electron transport, or electron injection.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다.
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 전자저지층(7), 발광층(3), 정공저지층(8), 전자 주입 및 수송층(9) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다.FIG. 1 shows an example of an organic light emitting device including a
2 is a substrate (1), an anode (2), a hole injection layer (5), a hole transport layer (6), an electron blocking layer (7), a light emitting layer (3), a hole blocking layer (8), an electron injection and transport layer ( 9) and an example of an organic light-emitting device including a
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, it will be described in more detail to help the understanding of the present invention.
본 발명은 상기 화학식 1로 표시되는 화합물을 제공한다. The present invention provides a compound represented by the above formula (1).
본 명세서에서, 및 는 다른 치환기에 연결되는 결합을 의미한다. In this specification, and means a bond connected to another substituent.
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소; 할로겐기; 니트릴기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 비페닐기일 수 있다. 즉, 비페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수 있다.As used herein, the term "substituted or unsubstituted" refers to deuterium; halogen group; nitrile group; nitro group; hydroxyl group; carbonyl group; ester group; imid; amino group; phosphine oxide group; alkoxy group; aryloxy group; alkyl thiooxy group; arylthioxy group; an alkyl sulfoxy group; arylsulfoxy group; silyl group; boron group; an alkyl group; cycloalkyl group; alkenyl group; aryl group; aralkyl group; aralkenyl group; an alkylaryl group; an alkylamine group; an aralkylamine group; heteroarylamine group; arylamine group; an arylphosphine group; or N, O, and S atom means that it is substituted or unsubstituted with one or more substituents selected from the group consisting of a heterocyclic group containing one or more, or substituted or unsubstituted, in which two or more substituents of the above-exemplified substituents are connected . For example, "a substituent in which two or more substituents are connected" may be a biphenyl group. That is, the biphenyl group may be an aryl group, and may be interpreted as a substituent in which two phenyl groups are connected.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the carbonyl group is not particularly limited, but it is preferably from 1 to 40 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, in the ester group, the oxygen of the ester group may be substituted with a linear, branched or cyclic alkyl group having 1 to 25 carbon atoms or an aryl group having 6 to 25 carbon atoms. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the imide group is not particularly limited, but it is preferably from 1 to 25 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, the silyl group specifically includes a trimethylsilyl group, a triethylsilyl group, a t-butyldimethylsilyl group, a vinyldimethylsilyl group, a propyldimethylsilyl group, a triphenylsilyl group, a diphenylsilyl group, a phenylsilyl group, and the like. However, the present invention is not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes a trimethylboron group, a triethylboron group, a t-butyldimethylboron group, a triphenylboron group, a phenylboron group, and the like, but is not limited thereto.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸, 사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to an exemplary embodiment, the number of carbon atoms in the alkyl group is 1 to 20. According to another exemplary embodiment, the alkyl group has 1 to 10 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n -pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2 -Dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl and the like, but are not limited thereto.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to an exemplary embodiment, the carbon number of the alkenyl group is 2 to 20. According to another exemplary embodiment, the carbon number of the alkenyl group is 2 to 10. According to another exemplary embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1- Butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2-( Naphthyl-1-yl)vinyl-1-yl, 2,2-bis(diphenyl-1-yl)vinyl-1-yl, stilbenyl group, styrenyl group, and the like, but are not limited thereto.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms, and according to an exemplary embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another exemplary embodiment, the carbon number of the cycloalkyl group is 3 to 20. According to another exemplary embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specifically, cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3-dimethylcyclohexyl, 3, 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but is not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to an exemplary embodiment, the carbon number of the aryl group is 6 to 30. According to an exemplary embodiment, the carbon number of the aryl group is 6 to 20. The aryl group may be a monocyclic aryl group, such as a phenyl group, a biphenyl group, or a terphenyl group, but is not limited thereto. The polycyclic aryl group may be a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a chrysenyl group, a fluorenyl group, and the like, but is not limited thereto.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, the fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, etc. can be However, the present invention is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 이소옥사졸릴기, 티아디아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a heterocyclic group including at least one of O, N, Si and S as a heterogeneous element, and the number of carbon atoms is not particularly limited, but it is preferably from 2 to 60 carbon atoms. Examples of the heterocyclic group include a thiophene group, a furan group, a pyrrole group, an imidazole group, a thiazole group, an oxazole group, an oxadiazole group, a triazole group, a pyridyl group, a bipyridyl group, a pyrimidyl group, a triazine group, an acridyl group , pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group , carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, phenanthroline group, isoxazolyl group, thiadia and a jolyl group, a phenothiazinyl group, and a dibenzofuranyl group, but is not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group in the aralkyl group, the aralkenyl group, the alkylaryl group, and the arylamine group is the same as the example of the aryl group described above. In the present specification, the alkyl group among the aralkyl group, the alkylaryl group, and the alkylamine group is the same as the example of the above-described alkyl group. In the present specification, the description of the heterocyclic group described above for heteroaryl among heteroarylamines may be applied. In the present specification, the alkenyl group among the aralkenyl groups is the same as the examples of the above-described alkenyl groups. In the present specification, the description of the above-described aryl group may be applied except that arylene is a divalent group. In the present specification, the description of the above-described heterocyclic group may be applied, except that heteroarylene is a divalent group. In the present specification, the hydrocarbon ring is not a monovalent group, and the description of the above-described aryl group or cycloalkyl group may be applied, except that it is formed by combining two substituents. In the present specification, the heterocyclic group is not a monovalent group, and the description of the above-described heterocyclic group may be applied, except that it is formed by combining two substituents.
바람직하게는, 상기 화학식 1은 하기 화학식 1-A, 1-B, 1-C 및 1-D로 표시되는 화합물 중에서 선택되는 어느 하나일 수 있다.Preferably,
상기 화학식 1-A, 1-B, 1-C 및 1-D에서,In the above formulas 1-A, 1-B, 1-C and 1-D,
X1, X2, X3, Ar1, Ar2, 및 R7 내지 R10에 대한 설명은 앞서 정의된 바와 같다.Descriptions of X 1 , X 2 , X 3 , Ar 1 , Ar 2 , and R 7 to R 10 are as defined above.
바람직하게는, X1 내지 X3은 모두 N이다. Preferably, X 1 to X 3 are all N.
바람직하게는, Ar1 및 Ar2는 각각 독립적으로 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다.Preferably, Ar 1 and Ar 2 may each independently be any one selected from the group consisting of:
바람직하게는, 상기 화학식 1-1은 하기 화합물로 구성되는 군으로부터 선택되는 어느 하나일 수 있다.Preferably, Formula 1-1 may be any one selected from the group consisting of the following compounds.
바람직하게는, 상기 화학식 1로 표시되는 화합물은 하기 화합물로 구성되는 군으로부터 선택되는 어느 하나일 수 있다.Preferably, the compound represented by
한편, 상기 화학식 1로 표시되는 화합물은 하기 반응식 1과 같은 제조 방법으로 제조할 수 있다.Meanwhile, the compound represented by
[반응식 1][Scheme 1]
상기 반응식 1에서, X를 제외한 나머지 정의는 앞서 정의한 바와 같으며, X는 할로겐이고 보다 바람직하게는 브로모, 또는 클로로이다. 상기 반응은 스즈키 커플링 반응으로서, 팔라듐 촉매와 염기 존재 하에 수행하는 것이 바람직하며, 스즈키 커플링 반응을 위한 반응기는 당업계에 알려진 바에 따라 변경이 가능하다. 상기 제조 방법은 후술할 제조예에서 보다 구체화될 수 있다.In
또한, 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 일례로, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다. In addition, the present invention provides an organic light emitting device including the compound represented by the formula (1). In one example, the present invention provides a first electrode; a second electrode provided to face the first electrode; and at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers includes the compound represented by
본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may have a single-layer structure, but may have a multi-layer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, etc. as an organic material layer. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
또한, 상기 유기물 층은 정공주입층, 정공수송층, 전자저지층 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있고, 상기 정공주입층, 정공수송층, 전자저지층 또는 정공 주입과 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic layer may include a hole injection layer, a hole transport layer, an electron blocking layer, or a layer that simultaneously injects and transports holes, and the hole injection layer, the hole transport layer, the electron blocking layer or the hole injection and transport at the same time The layer includes a compound represented by
또한, 상기 유기물 층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic layer may include an emission layer, and the emission layer includes the compound represented by
구체적으로, 상기 발광층은 호스트 물질을 포함할 수 있다.Specifically, the emission layer may include a host material.
이때, 상기 호스트 물질은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다.In this case, the host material may include a compound represented by
또한, 상기 유기물 층은 전자수송층, 전자주입층 또는 전자 주입 및 수송을 동시에 하는 층을 포함할 수 있고, 상기 전자수송층, 전자주입층 또는 전자 주입 및 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic layer may include an electron transport layer, an electron injection layer, or a layer that simultaneously injects and transports electrons, and the electron transport layer, the electron injection layer, or the layer that simultaneously injects and transports electrons is represented by
또한, 상기 전자수송층, 전자주입층, 또는 전자수송 및 전자주입을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the electron transport layer, the electron injection layer, or the layer that simultaneously transports and injects electrons includes the compound represented by
또한, 상기 유기물 층은 발광층 및 전자수송층을 포함하고, 상기 전자수송층은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다. In addition, the organic layer may include a light emitting layer and an electron transport layer, and the electron transport layer may include a compound represented by
또한, 본 발명에 따른 유기 발광 소자는, 기판 상에 양극, 1층 이상의 유기물 층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는 기판 상에 음극, 1층 이상의 유기물 층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.In addition, the organic light emitting device according to the present invention may be a normal type organic light emitting device in which an anode, one or more organic material layers, and a cathode are sequentially stacked on a substrate. Also, the organic light emitting device according to the present invention may be an inverted type organic light emitting device in which a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate. For example, the structure of the organic light emitting diode according to an embodiment of the present invention is illustrated in FIGS. 1 and 2 .
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다. FIG. 1 shows an example of an organic light emitting device including a
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 전자저지층(7), 발광층(3), 정공저지층(8), 전자 주입 및 수송층(9) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 정공주입층, 정공수송층, 전자저지층, 발광층, 정공저지층 및 전자 주입 및 수송층 중 1층 이상에 포함될 수 있다. 2 is a substrate (1), an anode (2), a hole injection layer (5), a hole transport layer (6), an electron blocking layer (7), a light emitting layer (3), a hole blocking layer (8), an electron injection and transport layer ( 9) and an example of an organic light-emitting device including a
본 발명에 따른 유기 발광 소자는, 상기 유기물 층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light emitting device according to the present invention may be manufactured using materials and methods known in the art, except that at least one layer of the organic material layer includes the compound represented by
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공 수송층, 발광층 및 전자 수송층을 포함하는 유기물 층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다. For example, the organic light emitting device according to the present invention may be manufactured by sequentially stacking a first electrode, an organic material layer, and a second electrode on a substrate. At this time, by using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation, a metal or conductive metal oxide or an alloy thereof is deposited on a substrate to form an anode. and, after forming an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer thereon, it can be prepared by depositing a material that can be used as a cathode thereon. In addition to this method, an organic light emitting device may be manufactured by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물 층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.In addition, the compound represented by
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다. In addition to the above method, an organic light emitting device may be manufactured by sequentially depositing an organic material layer and an anode material from a cathode material on a substrate (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.In one example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode and the second electrode is an anode.
상기 양극 물질로는 통상 유기물 층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SnO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다. As the anode material, a material having a large work function is generally preferred so that holes can be smoothly injected into the organic material layer. Specific examples of the anode material include metals such as vanadium, chromium, copper, zinc, gold, or alloys thereof; metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); combinations of metals and oxides such as ZnO:Al or SnO 2 :Sb; conductive polymers such as poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene](PEDOT), polypyrrole, and polyaniline, but are not limited thereto.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다. The cathode material is preferably a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the anode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead, or alloys thereof; and a multi-layered material such as LiF/Al or LiO 2 /Al, but is not limited thereto.
상기 정공 주입 물질로는 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물 층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다. The hole injection material is a layer for injecting holes from the electrode, and the hole injection material has the ability to transport holes, so it has a hole injection effect at the anode, an excellent hole injection effect on the light emitting layer or the light emitting material, and is generated in the light emitting layer A compound that prevents the excitons from moving to the electron injection layer or the electron injection material and is excellent in the ability to form a thin film is preferable. It is preferable that the highest occupied molecular orbital (HOMO) of the hole injection material is between the work function of the positive electrode material and the HOMO of the surrounding organic material layer. Specific examples of the hole injection material include metal porphyrin, oligothiophene, arylamine-based organic material, hexanitrile hexaazatriphenylene-based organic material, quinacridone-based organic material, and perylene-based organic material. of organic substances, anthraquinones, polyaniline and polythiophene-based conductive polymers, and the like, but are not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공 수송 물질로 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다. The hole transport layer is a layer that receives holes from the hole injection layer and transports them to the light emitting layer. A material capable of transporting holes from the anode or hole injection layer to the light emitting layer as a hole transport material. A material with high hole mobility. This is suitable. Specific examples include, but are not limited to, an arylamine-based organic material, a conductive polymer, and a block copolymer having a conjugated portion and a non-conjugated portion together.
상기 발광 물질로는 정공 수송층과 전자 수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다. The light emitting material is a material capable of emitting light in the visible ray region by receiving and combining holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency for fluorescence or phosphorescence is preferable. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq 3 ); carbazole-based compounds; dimerized styryl compounds; BAlq; 10-hydroxybenzo quinoline-metal compounds; compounds of the benzoxazole, benzthiazole and benzimidazole series; Poly(p-phenylenevinylene) (PPV)-based polymers; spiro compounds; polyfluorene, rubrene, and the like, but is not limited thereto.
상기 발광층은 호스트 재료 및 도펀트 재료를 포함할 수 있다. 호스트 재료는 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등이 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되지 않는다. The emission layer may include a host material and a dopant material. The host material includes a condensed aromatic ring derivative or a heterocyclic compound containing compound. Specifically, condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, fluoranthene compounds, etc., and heterocyclic-containing compounds include carbazole derivatives, dibenzofuran derivatives, ladder type Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되지 않는다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되지 않는다.Examples of the dopant material include an aromatic amine derivative, a strylamine compound, a boron complex, a fluoranthene compound, and a metal complex. Specifically, the aromatic amine derivative is a condensed aromatic ring derivative having a substituted or unsubstituted arylamino group, and includes pyrene, anthracene, chrysene, and periflanthene having an arylamino group. As the styrylamine compound, a substituted or unsubstituted It is a compound in which at least one arylvinyl group is substituted in the arylamine, and one or two or more substituents selected from the group consisting of an aryl group, a silyl group, an alkyl group, a cycloalkyl group and an arylamino group are substituted or unsubstituted. Specifically, there are styrylamine, styryldiamine, styryltriamine, styryltetraamine, and the like, but is not limited thereto. In addition, the metal complex includes an iridium complex, a platinum complex, and the like, but is not limited thereto.
상기 전자 수송 물질로는 전자주입층으로부터 전자를 수취하여 발광층까지 전자를 수송하는 층으로 전자 수송 물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다. 전자 수송층은 종래기술에 따라 사용된 바와 같이 임의의 원하는 캐소드 물질과 함께 사용할 수 있다. 특히, 적절한 캐소드 물질의 예는 낮은 일함수를 가지고 알루미늄층 또는 실버층이 뒤따르는 통상적인 물질이다. 구체적으로 세슘, 바륨, 칼슘, 이테르븀 및 사마륨이고, 각 경우 알루미늄 층 또는 실버층이 뒤따른다.The electron transport material is a layer that receives electrons from the electron injection layer and transports them to the light emitting layer. This is suitable. Specific examples include Al complex of 8-hydroxyquinoline; complexes containing Alq 3 ; organic radical compounds; hydroxyflavone-metal complexes, and the like, but are not limited thereto. The electron transport layer may be used with any desired cathode material as used in accordance with the prior art. In particular, examples of suitable cathode materials are conventional materials having a low work function and followed by a layer of aluminum or silver. Specifically cesium, barium, calcium, ytterbium and samarium, followed in each case by an aluminum layer or a silver layer.
상기 전자주입층은 전극으로부터 전자를 주입하는 층으로, 전자를 수송하는 능력을 갖고, 음극으로부터의 전자 주입 효과, 발광층 또는 발광 재료에 대하여 우수한 전자주입 효과를 가지며, 발광층에서 생성된 여기자의 정공주입층에의 이동을 방지하고, 또한, 박막형성능력이 우수한 화합물이 바람직하다. 구체적으로는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 프레오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 있으나, 이에 한정되지 않는다. The electron injection layer is a layer that injects electrons from the electrode, has the ability to transport electrons, has an electron injection effect from the cathode, an excellent electron injection effect on the light emitting layer or the light emitting material, and hole injection of excitons generated in the light emitting layer. A compound which prevents movement to a layer and is excellent in the ability to form a thin film is preferable. Specifically, fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, preorenylidene methane, anthrone, etc., derivatives thereof, metals complex compounds and nitrogen-containing 5-membered ring derivatives, but are not limited thereto.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되지 않는다.Examples of the metal complex compound include 8-hydroxyquinolinato lithium, bis(8-hydroxyquinolinato)zinc, bis(8-hydroxyquinolinato)copper, bis(8-hydroxyquinolinato)manganese, Tris(8-hydroxyquinolinato)aluminum, tris(2-methyl-8-hydroxyquinolinato)aluminum, tris(8-hydroxyquinolinato)gallium, bis(10-hydroxybenzo[h] Quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8-quinolinato) chlorogallium, bis (2-methyl-8-quinolinato) ( o-crezolato)gallium, bis(2-methyl-8-quinolinato)(1-naphtolato)aluminum, bis(2-methyl-8-quinolinato)(2-naphtolato)gallium, etc. However, the present invention is not limited thereto.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a top emission type, a back emission type, or a double side emission type depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by
이하, 발명의 이해를 돕기 위하여 바람직한 실시예들이 제시된다. 그러나 하기의 실시예들은 본 발명을 예시하기 위한 것일 뿐, 본 발명을 이들만으로 한정하는 것은 아니다.Hereinafter, preferred embodiments are presented to help the understanding of the invention. However, the following examples are only for illustrating the present invention, and the present invention is not limited thereto.
제조예 1: 화합물 A의 제조Preparation Example 1: Preparation of Compound A
(1) 화합물 A-1의 제조(1) Preparation of compound A-1
나프탈렌-2-아민 (naphthalen-2-amine, 200.0 g, 1.0 eq), 1-브로모-2-아이도벤젠 (1-bromo-2-iodobenzene, 395.1 g, 1.0 eq), 소듐 터트-부톡사이드 (NaOt-Bu, 268.4 g, 2 eq), 팔라듐아세테이트 (Pd(OAc)2, 3.13 g, 0.01 eq), 4,5-비스(디페닐포스피노)-9,9-디메틸잔텐 (4,5-Bis(diphenylphosphino)-9,9-dimethylxanthene, Xantphos, 16.1 g, 0.02 eq) 및 톨루엔 (Toluene, 2 L)에 녹여 환류하여 60 ℃에서 교반하였다. 2 시간 후 반응이 종료되면 실리카 필터하여 소듐 터트-부톡사이드를 제거한 후 감압 증류하여 용매를 제거하였다. 클로로포름(chloroform)을 사용해 녹인 후 물로 씻어주고 황산마그네슘(magnesium sulfate)과 산성백토를 넣고 교반 후 여과하여 감압 농축시켰다. 이 후 에틸아세테이트(ethyl acetate):헥산(hexane) = 1:50 조건에서 컬럼크로마토그래피를 통해 화합물 A-1을 얻었다. (316.5 g, 수율 76 %, MS: [M+H]+=299)Naphthalen-2-amine (naphthalen-2-amine, 200.0 g, 1.0 eq), 1-bromo-2-iodobenzene (1-bromo-2-iodobenzene, 395.1 g, 1.0 eq), sodium tert-butoxide (NaOt-Bu, 268.4 g, 2 eq), palladium acetate (Pd(OAc) 2 , 3.13 g, 0.01 eq), 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene (4,5 -Bis(diphenylphosphino)-9,9-dimethylxanthene, Xantphos, 16.1 g, 0.02 eq) and toluene (Toluene, 2 L) were dissolved under reflux and stirred at 60 °C. After 2 hours, when the reaction was completed, silica was filtered to remove sodium tert-butoxide, and then the solvent was removed by distillation under reduced pressure. It was dissolved using chloroform, washed with water, added with magnesium sulfate and acid clay, stirred, filtered, and concentrated under reduced pressure. Thereafter, compound A-1 was obtained through column chromatography under the condition of ethyl acetate:hexane = 1:50. (316.5 g, yield 76%, MS: [M+H] + =299)
(2) 화합물 A(5H-benzo[b]carbazole)의 제조(2) Preparation of compound A (5H-benzo[b]carbazole)
화합물 A-1 (316.5 g, 1.0 eq)에 비스(트리-터트-부틸포스핀)팔라듐(0) (Pd(t-Bu3P)2, 5.42 g, 0.01 eq), 탄산칼륨 (K2CO3, 293.4 g, 2.00 eq)을 다이에틸아세트아마이드 (Dimethylacetamide, DMAc, 3 L)에 넣고 환류하여 교반했다. 3 시간 후 반응물을 물에 부어서 결정화 시킨 뒤 여과하여 고체를 수득하였다. 여과한 고체를 1,2-디클로로벤젠 (1,2-dichlorobenzene, 1 L), 100 ℃에 완전히 녹인 후 물로 씻어주고 생성물이 녹아있는 용액에 황산마그네슘(magnesium sulfate)과 산성백토를 넣고 교반 후 여과하여 감압 농축시켰다. 이후 컬럼크로마토그래피로 정제하여 화합물 A(5H-benzo[b]carbazole)를 얻었다. (131.4 g, 수율 57 %, MS: [M+H]+=218)Bis(tri-tert-butylphosphine)palladium(0) (Pd(t-Bu 3 P) 2 , 5.42 g, 0.01 eq) in compound A-1 (316.5 g, 1.0 eq), potassium carbonate (K 2 CO 3 , 293.4 g, 2.00 eq) was added to diethylacetamide (Dimethylacetamide, DMAc, 3 L), refluxed and stirred. After 3 hours, the reaction product was poured into water to crystallize and filtered to obtain a solid. The filtered solid was completely dissolved in 1,2-dichlorobenzene (1 L) at 100 °C, washed with water, and magnesium sulfate and acid clay were added to the solution in which the product was dissolved, stirred and filtered. and concentrated under reduced pressure. After purification by column chromatography, compound A (5H-benzo[b]carbazole) was obtained. (131.4 g, yield 57%, MS: [M+H] + =218)
제조예 2: 화합물 B의 제조Preparation Example 2: Preparation of Compound B
1-브로모-2-아이도벤젠 대신 2-브로모-1-아이도나프탈렌(2-bromo-1-iodonaphthalene)을 사용하여 화합물 A의 제조 방법과 같은 방법으로 하기 화합물 B(13H-dibenzo[a,h]carbazole)를 얻었다.Using 2-bromo-1-iodonaphthalene instead of 1-bromo-2-idobenzene, the following compound B (13H-dibenzo [ a,h]carbazole) was obtained.
제조예 3: 화합물 C의 제조Preparation Example 3: Preparation of compound C
1-브로모-2-아이도벤젠 대신 2,3-디브로모나프탈렌(2,3-dibromonaphthalene)을 사용하여 화합물 A의 제조 방법과 같은 방법으로 하기 화합물 C(6H-dibenzo[b,h]carbazole)를 얻었다.Using 2,3-dibromonaphthalene instead of 1-bromo-2-idobenzene, the following compound C (6H-dibenzo[b,h] carbazole) was obtained.
제조예 4: 화합물 D의 제조Preparation Example 4: Preparation of compound D
1-브로모-2-아이도벤젠 대신 1-브로모-2-아이도나프탈렌(1-bromo-2-iodonaphthalene)을 사용하여 화합물 A의 제조 방법과 같은 방법으로 하기 화합물 D(7H-dibenzo[b,g]carbazole)를 얻었다. Using 1-bromo-2-iodonaphthalene instead of 1-bromo-2-idobenzene, the following compound D (7H-dibenzo[ b, g] carbazole) was obtained.
제조예 5: 화합물 E의 제조Preparation Example 5: Preparation of compound E
(1) 화합물 E-3 제조(1) Preparation of compound E-3
1-브로모나프탈렌-2-올 (1-bromonaphthalen-2-ol, 100.0 g, 1.0 eq), (3-클로로-2-플루오로페닐)보론산 ((3-chloro-2-fluorophenyl)boronic acid, 93.8 g, 1.2 eq), 탄산칼슘 (K2CO3, 185.9 g, 3.0 eq), 테트라키스(트리페닐포스핀)팔라듐(0) (Pd(PPh3)4, Tetrakis(triphenylphosphine)palladium(0), 15.5 g, 0.03 eq)을 테트라하이드로퓨란 (THF, 1 L) 및 물 (300 ml) 에 녹여 80 ℃에서 가열 교반했다. 2 시간 후 반응이 종료되면 유기 용매 층을 분리하여 황산마그네슘(magnesium sulfate)과 산성백토를 넣고 교반 후 여과하여 감압 농축시켰다. 이를 컬럼크로마토그래피하여 화합물 E-3을 얻었다 (100.2 g, 수율 82 %, MS: [M+H]+=273)1-bromonaphthalen-2-ol (1-bromonaphthalen-2-ol, 100.0 g, 1.0 eq), (3-chloro-2-fluorophenyl) boronic acid ((3-chloro-2-fluorophenyl) boronic acid , 93.8 g, 1.2 eq), calcium carbonate (K 2 CO 3 , 185.9 g, 3.0 eq), tetrakis(triphenylphosphine)palladium(0) (Pd(PPh 3 ) 4 , Tetrakis(triphenylphosphine)palladium(0) ), 15.5 g, 0.03 eq) was dissolved in tetrahydrofuran (THF, 1 L) and water (300 ml) and heated and stirred at 80 °C. When the reaction was completed after 2 hours, the organic solvent layer was separated, magnesium sulfate and acid clay were added, stirred, filtered, and concentrated under reduced pressure. This was subjected to column chromatography to obtain compound E-3 (100.2 g, yield 82%, MS: [M+H] + =273)
(2) 화합물 E-2 제조(2) Preparation of compound E-2
화합물 E-3 (100.2 g)과 탄산칼슘 (K2CO3, 152.6 g, 3 eq)를 다이에틸아세트아마이드 (Dimethylacetamide, DMAc, 1 L)에 넣고 80 ℃에서 가열 교반했다. 1 시간 후 반응이 종료되면 반응물을 물(2 L)에 부어 결정을 떨어트리고 여과하여 고체를 수득하였다. 수득한 고체를 톨루엔 (Toluene, 1 L)에 녹여 물로 씻어준 후 유기 용매 층을 분리하여 황산마그네슘(magnesium sulfate)과 산성백토를 넣고 교반 후 여과하였다. 여과한 용매를 20 %만 남기고 에틸아세테이트(Ethyl acetate)를 부어주어 결정을 떨어트리고 여과하였다. 이를 통해 화합물 E-2를 얻었다. (68.8 g, 수율 74 %, MS: [M+H]+=253)Compound E-3 (100.2 g) and calcium carbonate (K 2 CO 3 , 152.6 g, 3 eq) were added to diethylacetamide (Dimethylacetamide, DMAc, 1 L), and the mixture was heated and stirred at 80 °C. When the reaction was completed after 1 hour, the reaction product was poured into water (2 L) to drop crystals and filtered to obtain a solid. The obtained solid was dissolved in toluene (1 L), washed with water, the organic solvent layer was separated, magnesium sulfate and acid clay were added, stirred, and then filtered. Ethyl acetate was poured, leaving only 20% of the filtered solvent, to drop crystals and filtered. Through this, compound E-2 was obtained. (68.8 g, yield 74%, MS: [M+H] + =253)
(3) 화합물 E-1 제조(3) Preparation of compound E-1
화합물 E-2 (68.8 g)를 클로로포름 (CHCl3, 1 L)에 녹인 후 교반하면서 0 ℃로 온도를 낮춰준다. N-브로모숙신이미드 (N-bromosuccinimide, 54.4 g, 1.1 eq)를 천천히 넣어준다. 1 시간 후 반응이 종결되면 소듐설파이트 (Na2SO3) 수용액으로 씻어준 후 유기 용매 층을 분리하여 황산마그네슘 (magnesium sulfate)과 산성백토를 넣고 교반 후 여과하였다. 여과한 용매를 20 %만 남기고 에틸아세테이트(Ethyl acetate)를 부어주어 결정을 떨어트리고 여과하였다. 이를 통해 화합물 E-1을 얻었다. (57.2 g, 수율 56 %, MS: [M+H]+=332)After dissolving compound E-2 (68.8 g) in chloroform (CHCl 3 , 1 L), the temperature was lowered to 0 °C while stirring. N-bromosuccinimide (N-bromosuccinimide, 54.4 g, 1.1 eq) is slowly added. When the reaction was completed after 1 hour, it was washed with an aqueous solution of sodium sulfite (Na 2 SO 3 ), the organic solvent layer was separated, magnesium sulfate and acid clay were added, stirred, and then filtered. Ethyl acetate was poured, leaving only 20% of the filtered solvent, to drop crystals and filtered. Through this, compound E-1 was obtained. (57.2 g, yield 56%, MS: [M+H] + =332)
(4) 화합물 E의 제조 (4) Preparation of compound E
화합물 E-1 (57.2 g, 1.0 eq), 비스(피나콜라토)디보론 (Bis(pinacolato)diboron, 78.1 g, 1.2 eq), (1,1’-비스(디페닐포스피노)페로센)팔라듐 디클로라이드 (Pd(dppf)Cl2, (1,1'-Bis(diphenylphosphino)ferrocene)palladium dichloride, 3.75 g, 0.02 eq) 및 포타슘 아세테이트 (KOAc, potassium acetate, 50.3 g, 2.00 eq)을 1,4-다이옥산 (1,4-Dioxnae, 600 ml)에 넣고 100 ℃에서 가열 교반했다. 3 시간 후 반응이 종료되면 감압하여 용매를 제거했다. 여과한 고체를 클로로포름 (CHCl3)에 완전히 녹인 후 물로 씻어주고 생성물이 녹아있는 용액을 감압 농축하여 용매를 80 % 정도 제거했다. 이를 다시 환류 상태에서 에탄올을 넣어주며 결정을 떨어트리고 식힌 후 여과 해서 화합물 E를 얻었다. (80.6 g, 수율 83 %, MS: [M+H]+=379)Compound E-1 (57.2 g, 1.0 eq), bis(pinacolato)diboron (Bis(pinacolato)diboron, 78.1 g, 1.2 eq), (1,1'-bis(diphenylphosphino)ferrocene)palladium dichloride (Pd(dppf)Cl 2 , (1,1'-Bis(diphenylphosphino)ferrocene)palladium dichloride, 3.75 g, 0.02 eq) and potassium acetate (KOAc, potassium acetate, 50.3 g, 2.00 eq) were placed in 1,4-dioxane (1,4-Dioxnae, 600 ml) and heated and stirred at 100 °C. When the reaction was completed after 3 hours, the solvent was removed under reduced pressure. The filtered solid was completely dissolved in chloroform (CHCl 3 ), washed with water, and the solution in which the product was dissolved was concentrated under reduced pressure to remove about 80% of the solvent. Ethanol was added thereto under reflux to drop crystals, cooled, and filtered to obtain compound E. (80.6 g, yield 83%, MS: [M+H] + =379)
제조예 6: 화합물 F의 제조Preparation Example 6: Preparation of compound F
(3-클로로-2-플루오로페닐)보론산 대신 (4-클로로-2-플루오로페닐)보론산을 사용하여 화합물 E의 제조 방법과 같은 방법으로 하기 화합물 F를 얻었다. (MS: [M+H]+=379)The following compound F was obtained in the same manner as in the preparation of compound E using (4-chloro-2-fluorophenyl)boronic acid instead of (3-chloro-2-fluorophenyl)boronic acid. (MS: [M+H] + =379)
제조예 7: 화합물 G의 제조Preparation Example 7: Preparation of compound G
(3-클로로-2-플루오로페닐)보론산 대신 (5-클로로-2-플루오로페닐)보론산을 사용하여 화합물 E의 제조 방법과 같은 방법으로 하기 화합물 G를 얻었다. (MS: [M+H]+=379)The following compound G was obtained in the same manner as in the preparation of compound E using (5-chloro-2-fluorophenyl)boronic acid instead of (3-chloro-2-fluorophenyl)boronic acid. (MS: [M+H] + =379)
제조예 8: 화합물 H의 제조Preparation 8: Preparation of compound H
(3-클로로-2-플루오로페닐)보론산 대신 (2-클로로-6-플루오로페닐)보론산을 사용하여 화합물 E의 제조 방법과 같은 방법으로 하기 화합물 H를 합성했다. MS: [M+H]+=379The following compound H was synthesized in the same manner as in the preparation of compound E using (2-chloro-6-fluorophenyl)boronic acid instead of (3-chloro-2-fluorophenyl)boronic acid. MS: [M+H] + =379
상기 제조예 5 내지 8에서 제조한 화합물과 트리아진(Triazine)이 포함된 중간체를 스즈키 커플링 반응(Suzuki coupling reaction)을 통해 반응시켜 하기 실시예 1 내지 51의 화합물 1 내지 51을 제조하기 위한 중간체 화합물로 각각 활용하였다.Intermediate for preparing
실시예 1: 화합물 1의 제조Example 1: Preparation of
질소 분위기에서 화합물 sub1 (20 g, 41.3 mmol), 화합물 A (9.9 g, 45.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol)을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (106 mg, 0.207 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼크로마토그래피로 정제해서 화합물 1을 얻었다. (13.7 g, 수율 50 %, MS: [M+H]+=665)In a nitrogen atmosphere, compound sub1 (20 g, 41.3 mmol), compound A (9.9 g, 45.5 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (106 mg, 0.207 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again purified with chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 2: 화합물 2의 제조Example 2: Preparation of
질소 분위기에서 화합물 sub2 (20 g, 41.3 mmol), 화합물 A (9.8 g, 45.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (105 mg, 0.2 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 2를 얻었다. (11.8 g 수율 43 %, MS: [M+H]+=665)In a nitrogen atmosphere, compound sub2 (20 g, 41.3 mmol), compound A (9.8 g, 45.5 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (105 mg, 0.2 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 3: 화합물 3의 제조Example 3: Preparation of
질소 분위기에서 화합물 sub3 (20 g, 41.3 mmol), 화합물 A (9.8 g, 45.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (105 mg, 0.2 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 3을 얻었다. (14.5 g, 수율 53 %, MS: [M+H]+=665)In a nitrogen atmosphere, compound sub3 (20 g, 41.3 mmol), compound A (9.8 g, 45.5 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (105 mg, 0.2 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 4: 화합물 4의 제조Example 4: Preparation of
질소 분위기에서 화합물 sub4 (20 g, 41.3 mmol), 화합물 A (9.8 g, 45.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (105 mg, 0.2 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 4를 얻었다. (15.6 g, 수율 57 %, MS: [M+H]+=665)In a nitrogen atmosphere, compound sub4 (20 g, 41.3 mmol), compound A (9.8 g, 45.5 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (105 mg, 0.2 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 5: 화합물 5의 제조Example 5: Preparation of
질소 분위기에서 화합물 sub5 (20 g, 37.5 mmol), 화합물 A (9.0 g, 41.2 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.8 g, 112 mmol)을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이후 비스(트리-터트-부틸포스핀)팔라듐(0) (96 mg, 0.187 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 5를 얻었다. (14.7 g, 수율 55 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub5 (20 g, 37.5 mmol), compound A (9.0 g, 41.2 mmol) and sodium tert-butoxide (sodium tert-butoxide, 10.8 g, 112 mmol) were added to xylene (200 ml) and stirred and reflux. Then, bis(tri-tert-butylphosphine)palladium(0) (96 mg, 0.187 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 6: 화합물 6의 제조Example 6: Preparation of
질소 분위기에서 화합물 sub6 (20 g, 37.5 mmol), 화합물 A (9.0 g, 41.2 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.8 g, 112 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (96 mg, 0.187 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 6을 얻었다. (14.7 g, 수율 55 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub6 (20 g, 37.5 mmol), compound A (9.0 g, 41.2 mmol) and sodium tert-butoxide (sodium tert-butoxide, 10.8 g, 112 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (96 mg, 0.187 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 7: 화합물 7의 제조Example 7: Preparation of
질소 분위기에서 화합물 sub7 (20 g, 34.2 mmol), 화합물 A (8.2 g, 37.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.9 g, 102 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (87 mg, 0.171 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 7을 얻었다. (15.5 g, 수율 59 %, MS: [M+H]+=765)In a nitrogen atmosphere, compound sub7 (20 g, 34.2 mmol), compound A (8.2 g, 37.7 mmol) and sodium tert-butoxide (9.9 g, 102 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (87 mg, 0.171 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 8: 화합물 8의 제조Example 8: Preparation of
질소 분위기에서 화합물 sub8 (20 g, 34.2 mmol), 화합물 A (8.2 g, 37.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.9 g, 102 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (87 mg, 0.171 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 8을 얻었다. (13.8 g, 수율 53 %, MS: [M+H]+=765)In a nitrogen atmosphere, compound sub8 (20 g, 34.2 mmol), compound A (8.2 g, 37.7 mmol) and sodium tert-butoxide (9.9 g, 102 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (87 mg, 0.171 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 9: 화합물 9의 제조Example 9: Preparation of
질소 분위기에서 화합물 sub9 (20 g, 35.7 mmol), 화합물 A (8.5 g, 39.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.3 g, 107 mmol)을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (91 mg, 0.179 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 9를 얻었다. (12.9 g, 수율 49 %, MS: [M+H]+=741)In a nitrogen atmosphere, compound sub9 (20 g, 35.7 mmol), compound A (8.5 g, 39.3 mmol) and sodium tert-butoxide (10.3 g, 107 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (91 mg, 0.179 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain
실시예 10: 화합물 10의 제조Example 10: Preparation of compound 10
질소 분위기에서 화합물 sub10 (20 g, 35.7 mmol), 화합물 A (8.5 g, 39.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.3 g, 107 mmol) 을 에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (91 mg, 0.179 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 10을 얻었다. (14.8 g, 수율 56 %, MS: [M+H]+=741)In a nitrogen atmosphere, compound sub10 (20 g, 35.7 mmol), compound A (8.5 g, 39.3 mmol) and sodium tert-butoxide (sodium tert-butoxide, 10.3 g, 107 mmol) were added to it, and stirred and refluxed. After this, bis(tri-tert-butylphosphine)palladium(0) (91 mg, 0.179 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 10. (14.8 g, yield 56%, MS: [M+H] + =741)
실시예 11: 화합물 11의 제조Example 11: Preparation of compound 11
질소 분위기에서 화합물 sub11 (20 g, 34.2 mmol), 화합물 A (8.21 g, 37.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.9 g, 102 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (87 mg, 0.171 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 11을 얻었다. (16.2 g, 수율 62 %, MS: [M+H]+=765)In a nitrogen atmosphere, compound sub11 (20 g, 34.2 mmol), compound A (8.21 g, 37.7 mmol) and sodium tert-butoxide (9.9 g, 102 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (87 mg, 0.171 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 11. (16.2 g, yield 62%, MS: [M+H] + =765)
실시예 12: 화합물 12의 제조Example 12: Preparation of compound 12
질소 분위기에서 화합물 sub12 (20 g, 31.5 mmol), 화합물 A (7.5 g, 34.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.1 g, 94.6 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (81 mg, 0.158 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 12를 얻었다. (15.6 g, 수율 61 %, MS: [M+H]+=815)In a nitrogen atmosphere, compound sub12 (20 g, 31.5 mmol), compound A (7.5 g, 34.7 mmol) and sodium tert-butoxide (9.1 g, 94.6 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (81 mg, 0.158 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 12. (15.6 g, yield 61%, MS: [M+H] + =815)
실시예 13: 화합물 13의 제조Example 13: Preparation of compound 13
질소 분위기에서 화합물 sub13 (20 g, 31.4 mmol), 화합물 A (7.5 g, 34.6 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.1 g, 94.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (80 mg, 0.157 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 13을 얻었다. (16.9 g, 수율 66 %, MS: [M+H]+=817)In a nitrogen atmosphere, compound sub13 (20 g, 31.4 mmol), compound A (7.5 g, 34.6 mmol) and sodium tert-butoxide (9.1 g, 94.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (80 mg, 0.157 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 13. (16.9 g, yield 66%, MS: [M+H] + =817)
실시예 14: 화합물 14의 제조Example 14: Preparation of compound 14
질소 분위기에서 화합물 sub14 (20 g, 29.2 mmol), 화합물 A (7.0 g, 32.2 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.4 g, 87.7 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (75 mg, 0.146 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 14를 얻었다. (13.6 g, 수율 54 %, MS: [M+H]+=866)In a nitrogen atmosphere, compound sub14 (20 g, 29.2 mmol), compound A (7.0 g, 32.2 mmol) and sodium tert-butoxide (8.4 g, 87.7 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (75 mg, 0.146 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 14. (13.6 g, yield 54%, MS: [M+H] + =866)
실시예 15: 화합물 15의 제조Example 15: Preparation of compound 15
질소 분위기에서 화합물 sub15 (20 g, 31.4 mmol), 화합물 A (7.5 g, 34.6 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.1 g, 94.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (80 mg, 0.157 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 15를 얻었다. (13.8 g, 수율 54 %, MS: [M+H]+=817)In a nitrogen atmosphere, compound sub15 (20 g, 31.4 mmol), compound A (7.5 g, 34.6 mmol) and sodium tert-butoxide (9.1 g, 94.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (80 mg, 0.157 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 15. (13.8 g, yield 54%, MS: [M+H] + =817)
실시예 16: 화합물 16의 제조Example 16: Preparation of compound 16
질소 분위기에서 화합물 sub16 (20 g, 30.8 mmol), 화합물 A (7.4 g, 33.9 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.9 g, 92.4 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (79 mg, 0.154 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 16을 얻었다. (14.0 g, 수율 55 %, MS: [M+H]+=830)In a nitrogen atmosphere, compound sub16 (20 g, 30.8 mmol), compound A (7.4 g, 33.9 mmol) and sodium tert-butoxide (8.9 g, 92.4 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (79 mg, 0.154 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 16. (14.0 g, yield 55%, MS: [M+H] + =830)
실시예 17: 화합물 17의 제조Example 17: Preparation of compound 17
질소 분위기에서 화합물 sub17 (20 g, 28.6 mmol), 화합물 A (6.8 g, 31.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.2 g, 85.8 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (73 mg, 0.143 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 17을 얻었다. (13.8 g, 수율 55 %, MS: [M+H]+=881)In a nitrogen atmosphere, compound sub17 (20 g, 28.6 mmol), compound A (6.8 g, 31.5 mmol) and sodium tert-butoxide (8.2 g, 85.8 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (73 mg, 0.143 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 17. (13.8 g, yield 55%, MS: [M+H] + =881)
실시예 18: 화합물 18의 제조Example 18: Preparation of compound 18
질소 분위기에서 화합물 sub18 (20 g, 26.7 mmol), 화합물 A (6.4 g, 29.4 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.7 g, 80.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (68 mg, 0.133 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 18을 얻었다. (15.8 g, 수율 64 %, MS: [M+H]+=931)In a nitrogen atmosphere, compound sub18 (20 g, 26.7 mmol), compound A (6.4 g, 29.4 mmol) and sodium tert-butoxide (7.7 g, 80.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (68 mg, 0.133 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 18. (15.8 g, yield 64%, MS: [M+H] + =931)
실시예 19: 화합물 19의 제조Example 19: Preparation of compound 19
질소 분위기에서 화합물 sub19 (20 g, 27.6 mmol), 화합물 A (6.6 g, 30.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.0 g, 82.7 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (70 mg, 0.138 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 19를 얻었다. (12.5 g, 수율 50 %, MS: [M+H]+=907)In a nitrogen atmosphere, compound sub19 (20 g, 27.6 mmol), compound A (6.6 g, 30.3 mmol) and sodium tert-butoxide (8.0 g, 82.7 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (70 mg, 0.138 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 19. (12.5 g, yield 50%, MS: [M+H] + =907)
실시예 20: 화합물 20의 제조Example 20: Preparation of compound 20
질소 분위기에서 화합물 sub20 (20 g, 34.8 mmol), 화합물 A (8.3 g, 38.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.0 g, 104 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (89 mg, 0.174 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 20을 얻었다. (15.0 g, 수율 57 %, MS: [M+H]+=755)In a nitrogen atmosphere, compound sub20 (20 g, 34.8 mmol), compound A (8.3 g, 38.3 mmol) and sodium tert-butoxide (10.0 g, 104 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (89 mg, 0.174 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 20. (15.0 g, yield 57%, MS: [M+H] + =755)
실시예 21: 화합물 21의 제조Example 21: Preparation of compound 21
질소 분위기에서 화합물 sub21 (20 g, 32.0 mmol), 화합물 A (7.7 g, 35.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.2 g, 96.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (82 mg, 0.160 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 21을 얻었다. (15.7 g, 수율 61 %, MS: [M+H]+=805)In a nitrogen atmosphere, compound sub21 (20 g, 32.0 mmol), compound A (7.7 g, 35.3 mmol) and sodium tert-butoxide (9.2 g, 96.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (82 mg, 0.160 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 21. (15.7 g, yield 61%, MS: [M+H] + =805)
실시예 22: 화합물 22의 제조Example 22: Preparation of compound 22
질소 분위기에서 화합물 sub22 (20 g, 29.7 mmol), 화합물 A (7.1 g, 32.6 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.6 g, 89.0 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (76 mg, 0.148 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 22를 얻었다. (15.4 g, 수율 61 %, MS: [M+H]+=855)In a nitrogen atmosphere, compound sub22 (20 g, 29.7 mmol), compound A (7.1 g, 32.6 mmol) and sodium tert-butoxide (8.6 g, 89.0 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (76 mg, 0.148 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 22. (15.4 g, yield 61%, MS: [M+H] + =855)
실시예 23: 화합물 23의 제조Example 23: Preparation of compound 23
질소 분위기에서 화합물 sub23 (20 g, 30.8 mmol), 화합물 A (7.4 g, 33.8 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.9 g, 92.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (79 mg, 0.154 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 23을 얻었다. (13.8 g, 수율 54 %, MS: [M+H]+=831)In a nitrogen atmosphere, compound sub23 (20 g, 30.8 mmol), compound A (7.4 g, 33.8 mmol) and sodium tert-butoxide (8.9 g, 92.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (79 mg, 0.154 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 23. (13.8 g, yield 54%, MS: [M+H] + =831)
실시예 24: 화합물 24의 제조Example 24: Preparation of compound 24
질소 분위기에서 화합물 sub24 (20 g, 33.9 mmol), 화합물 A (8.1 g, 37.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.8 g, 101 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (87 mg, 0.169 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 24를 얻었다. (14.6 g, 수율 56 %, MS: [M+H]+=771)In a nitrogen atmosphere, compound sub24 (20 g, 33.9 mmol), compound A (8.1 g, 37.3 mmol) and sodium tert-butoxide (9.8 g, 101 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (87 mg, 0.169 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 24. (14.6 g, yield 56%, MS: [M+H] + =771)
실시예 25: 화합물 25의 제조Example 25: Preparation of compound 25
질소 분위기에서 화합물 sub25 (20 g, 30.0 mmol), 화합물 A (7.2 g, 33.0 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.7 g, 90.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (77 mg, 0.150 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 25를 얻었다. (15.5 g, 수율 61 %, MS: [M+H]+=848)In a nitrogen atmosphere, compound sub25 (20 g, 30.0 mmol), compound A (7.2 g, 33.0 mmol) and sodium tert-butoxide (8.7 g, 90.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (77 mg, 0.150 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 25. (15.5 g, yield 61%, MS: [M+H] + =848)
실시예 26: 화합물 26의 제조Example 26: Preparation of compound 26
질소 분위기에서 화합물 sub26 (20 g, 27.1 mmol), 화합물 A (6.5 g, 29.80 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.8 g, 81.2 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (69 mg, 0.135 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 26을 얻었다. (12.2 g, 수율 49 %, MS: [M+H]+=921)In a nitrogen atmosphere, compound sub26 (20 g, 27.1 mmol), compound A (6.5 g, 29.80 mmol) and sodium tert-butoxide (7.8 g, 81.2 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (69 mg, 0.135 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 26. (12.2 g, yield 49%, MS: [M+H] + =921)
실시예 27: 화합물 27의 제조Example 27: Preparation of compound 27
질소 분위기에서 화합물 sub27 (20 g, 26.5 mmol), 화합물 A (6.3 g, 29.1 mmol) 및 odium tert-butoxide (7.6 g, 79.4 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (68 mg, 0.132 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 27을 얻었다. (14.8 g, 수율 60 %, MS: [M+H]+=937)Compound sub27 (20 g, 26.5 mmol), compound A (6.3 g, 29.1 mmol) and odium tert-butoxide (7.6 g, 79.4 mmol) were added to xylene (200 ml) in a nitrogen atmosphere, and stirred and refluxed. After this, bis(tri-tert-butylphosphine)palladium(0) (68 mg, 0.132 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 27. (14.8 g, yield 60%, MS: [M+H] + =937)
실시예 28: 화합물 28의 제조Example 28: Preparation of compound 28
질소 분위기에서 화합물 sub28 (20 g, 30.1 mmol), 화합물 A (7.2 g, 33.1 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.7 g, 90.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (77 mg, 0.151 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 28을 얻었다. (13.2 g, 수율 52 %, MS: [M+H]+=845)In a nitrogen atmosphere, compound sub28 (20 g, 30.1 mmol), compound A (7.2 g, 33.1 mmol) and sodium tert-butoxide (8.7 g, 90.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (77 mg, 0.151 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 28. (13.2 g, yield 52%, MS: [M+H] + =845)
실시예 29: 화합물 29의 제조Example 29: Preparation of compound 29
질소 분위기에서 화합물 sub29 (20 g, 28.7 mmol), 화합물 A (6.9 g, 31.6 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.3 g, 86.2 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (73 mg, 0.144 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 29를 얻었다. (12.8 g, 수율 51 %, MS: [M+H]+=878)In a nitrogen atmosphere, compound sub29 (20 g, 28.7 mmol), compound A (6.9 g, 31.6 mmol) and sodium tert-butoxide (8.3 g, 86.2 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (73 mg, 0.144 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 29. (12.8 g, yield 51%, MS: [M+H] + =878)
실시예 30: 화합물 30의 제조Example 30: Preparation of compound 30
질소 분위기에서 화합물 sub1 (20 g, 41.3 mmol), 화합물 B (12.6 g, 45.54 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (106 mg, 0.207 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 30을 얻었다. (16.2 g, 수율 55 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub1 (20 g, 41.3 mmol), compound B (12.6 g, 45.54 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (106 mg, 0.207 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 30. (16.2 g, yield 55%, MS: [M+H] + =715)
실시예 31: 화합물 31의 제조Example 31: Preparation of compound 31
질소 분위기에서 화합물 sub31 (20 g, 34.8 mmol), 화합물 B (10.7 g, 38.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.0 g, 104 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (89 mg, 0.174 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 31을 얻었다. (15.7 g, 수율 56 %, MS: [M+H]+=805)In a nitrogen atmosphere, compound sub31 (20 g, 34.8 mmol), compound B (10.7 g, 38.3 mmol) and sodium tert-butoxide (10.0 g, 104 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (89 mg, 0.174 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 31. (15.7 g, yield 56%, MS: [M+H] + =805)
실시예 32: 화합물 32의 제조Example 32: Preparation of compound 32
질소 분위기에서 화합물 sub32 (20 g, 32.0 mmol), 화합물 B (9.8 g, 35.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.2 g, 96.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (82 mg, 0.160 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 32를 얻었다. (13.1 g, 수율 48 %, MS: [M+H]+=855)In a nitrogen atmosphere, compound sub32 (20 g, 32.0 mmol), compound B (9.8 g, 35.3 mmol) and sodium tert-butoxide (9.2 g, 96.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (82 mg, 0.160 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 32. (13.1 g, yield 48%, MS: [M+H] + =855)
실시예 33: 화합물 33의 제조Example 33: Preparation of compound 33
질소 분위기에서 화합물 sub33 (20 g, 29.0 mmol), 화합물 B (8.9 g, 31.9 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.4 g, 86.9 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (74 mg, 0.145 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 33을 얻었다. (13.3 g, 수율 50 %, MS: [M+H]+=922)In a nitrogen atmosphere, compound sub33 (20 g, 29.0 mmol), compound B (8.9 g, 31.9 mmol) and sodium tert-butoxide (8.4 g, 86.9 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (74 mg, 0.145 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 33. (13.3 g, yield 50%, MS: [M+H] + =922)
실시예 34: 화합물 34의 제조Example 34: Preparation of compound 34
질소 분위기에서 화합물 sub34 (20 g, 30.8 mmol), 화합물 B (9.4 g, 33.8 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.9 g, 92.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (79 mg, 0.154 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 34를 얻었다. (15.4 g, 수율 57 %, MS: [M+H]+=882)In a nitrogen atmosphere, compound sub34 (20 g, 30.8 mmol), compound B (9.4 g, 33.8 mmol) and sodium tert-butoxide (8.9 g, 92.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (79 mg, 0.154 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 34. (15.4 g, yield 57%, MS: [M+H] + =882)
실시예 35: 화합물 35의 제조Example 35: Preparation of compound 35
질소 분위기에서 화합물 sub35 (20 g, 26.5 mmol), 화합물 B (8.1 g, 29.1 mol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.6 g, 79.4 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (68 mg, 0.132 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 35를 얻었다. (14.3 g, 수율 55 %, MS: [M+H]+=987)In a nitrogen atmosphere, compound sub35 (20 g, 26.5 mmol), compound B (8.1 g, 29.1 mol) and sodium tert-butoxide (7.6 g, 79.4 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (68 mg, 0.132 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 35. (14.3 g, yield 55%, MS: [M+H] + =987)
실시예 36: 화합물 36의 제조Example 36: Preparation of compound 36
질소 분위기에서 화합물 sub36 (20 g, 24.6 mmol), 화합물 B (7.5 g, 27.0 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.1 g, 73.7 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (63 mg, 0.123 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 36을 얻었다. (12.3 g, 수율 48 %, MS: [M+H]+=1046) In a nitrogen atmosphere, compound sub36 (20 g, 24.6 mmol), compound B (7.5 g, 27.0 mmol) and sodium tert-butoxide (7.1 g, 73.7 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (63 mg, 0.123 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 36. (12.3 g, yield 48%, MS: [M+H] + =1046)
실시예 37: 화합물 37의 제조Example 37: Preparation of compound 37
질소 분위기에서 화합물 sub37 (20 g, 32.8 mmol), 화합물 B (10.0 g, 36.1 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.5 g, 98.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (84 mg, 0.164 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 37을 얻었다. (12.9 g, 수율 47 %, MS: [M+H]+=841)In a nitrogen atmosphere, compound sub37 (20 g, 32.8 mmol), compound B (10.0 g, 36.1 mmol) and sodium tert-butoxide (9.5 g, 98.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (84 mg, 0.164 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 37. (12.9 g, yield 47%, MS: [M+H] + =841)
실시예 38: 화합물 38의 제조Example 38: Preparation of compound 38
질소 분위기에서 화합물 sub38 (20 g, 34.2 mmol), 화합물 B (10.5 g, 37.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.9 g, 102 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (87 mg, 0.171 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 38을 얻었다. (13.9 g, 수율 50 %, MS: [M+H]+=815)In a nitrogen atmosphere, compound sub38 (20 g, 34.2 mmol), compound B (10.5 g, 37.7 mmol) and sodium tert-butoxide (9.9 g, 102 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (87 mg, 0.171 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 38. (13.9 g, yield 50%, MS: [M+H] + =815)
실시예 39: 화합물 39의 제조Example 39: Preparation of compound 39
질소 분위기에서 화합물 sub39 (20 g, 32.0 mmol), 화합물 C (9.8 g, 35.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.2 g, 96.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (82 mg, 0.160 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 39를 얻었다. (16.4 g, 수율 60 %, MS: [M+H]+=855)In a nitrogen atmosphere, compound sub39 (20 g, 32.0 mmol), compound C (9.8 g, 35.3 mmol) and sodium tert-butoxide (9.2 g, 96.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (82 mg, 0.160 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 39. (16.4 g, yield 60%, MS: [M+H] + =855)
실시예 40: 화합물 40의 제조Example 40: Preparation of compound 40
질소 분위기에서 화합물 sub40 (20 g, 27.6 mmol), 화합물 C (8.4 g, 30.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.0 g, 82.7 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (70 mg, 0.138 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 40을 얻었다. (16.6 g, 수율 63 %, MS: [M+H]+=957)In a nitrogen atmosphere, compound sub40 (20 g, 27.6 mmol), compound C (8.4 g, 30.3 mmol) and sodium tert-butoxide (8.0 g, 82.7 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (70 mg, 0.138 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 40. (16.6 g, yield 63%, MS: [M+H] + =957)
실시예 41: 화합물 41의 제조Example 41: Preparation of compound 41
질소 분위기에서 화합물 sub41 (20 g, 26.5 mmol), 화합물 C (8.1 g, 29.1 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.6 g, 79.4 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (68 mg, 0.132 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 41을 얻었다. (14.3 g, 수율 55 %, MS: [M+H]+=987)In a nitrogen atmosphere, compound sub41 (20 g, 26.5 mmol), compound C (8.1 g, 29.1 mmol) and sodium tert-butoxide (7.6 g, 79.4 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (68 mg, 0.132 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 41. (14.3 g, yield 55%, MS: [M+H] + =987)
실시예 42: 화합물 42의 제조Example 42: Preparation of compound 42
질소 분위기에서 화합물 sub42 (20 g, 30.3 mmol), 화합물 C (9.3 g, 33.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.7 g, 90.9 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (77 mg, 0.151 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 42를 얻었다. (15.1 g, 수율 56 %, MS: [M+H]+=892)In a nitrogen atmosphere, compound sub42 (20 g, 30.3 mmol), compound C (9.3 g, 33.3 mmol) and sodium tert-butoxide (8.7 g, 90.9 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (77 mg, 0.151 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 42. (15.1 g, yield 56%, MS: [M+H] + =892)
실시예 43: 화합물 43의 제조Example 43: Preparation of compound 43
질소 분위기에서 화합물 sub43 (20 g, 28.6 mmol), 화합물 B (8.8 g, 31.5 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.2 g, 85.8 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (73 mg, 0.143 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 43을 얻었다. (14.1 g, 수율 53 %, MS: [M+H]+=931)In a nitrogen atmosphere, compound sub43 (20 g, 28.6 mmol), compound B (8.8 g, 31.5 mmol) and sodium tert-butoxide (8.2 g, 85.8 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (73 mg, 0.143 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 43. (14.1 g, yield 53%, MS: [M+H] + =931)
실시예 44: 화합물 44의 제조Example 44: Preparation of compound 44
질소 분위기에서 화합물 sub44 (20 g, 30.0 mmol), 화합물 C (9.2 g, 33.0 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.7 g, 90.1 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (77 mg, 0.150 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 44를 얻었다. (13.2 g, 수율 49 %, MS: [M+H]+=898)In a nitrogen atmosphere, compound sub44 (20 g, 30.0 mmol), compound C (9.2 g, 33.0 mmol) and sodium tert-butoxide (8.7 g, 90.1 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (77 mg, 0.150 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 44. (13.2 g, yield 49%, MS: [M+H] + =898)
실시예 45: 화합물 45의 제조Example 45: Preparation of compound 45
질소 분위기에서 화합물 sub45 (20 g, 35.7 mmol), 화합물 D (10.9 g, 39.3 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 10.3 g, 107 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (91 mg, 0.179 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 45를 얻었다. (16.4 g, 수율 58 %, MS: [M+H]+=791)In a nitrogen atmosphere, compound sub45 (20 g, 35.7 mmol), compound D (10.9 g, 39.3 mmol) and sodium tert-butoxide (10.3 g, 107 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (91 mg, 0.179 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 45. (16.4 g, yield 58%, MS: [M+H] + =791)
실시예 46: 화합물 46의 제조Example 46: Preparation of compound 46
질소 분위기에서 화합물 sub46 (20 g, 24.6 mmol), 화합물 D (7.5 g, 27.0 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 7.1 g, 73.7 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (63 mg, 0.23 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 46을 얻었다. (16.9 g, 수율 66 %, MS: [M+H]+=1046)In a nitrogen atmosphere, compound sub46 (20 g, 24.6 mmol), compound D (7.5 g, 27.0 mmol) and sodium tert-butoxide (7.1 g, 73.7 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (63 mg, 0.23 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 46. (16.9 g, yield 66%, MS: [M+H] + =1046)
실시예 47: 화합물 47의 제조Example 47: Preparation of compound 47
질소 분위기에서 화합물 sub47 (20 g, 30.8 mmol), 화합물 D (9.4 g, 33.8 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 8.9 g, 92.3 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (79 mg, 0.154 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 47을 얻었다. (18.4 g, 수율 68 %, MS: [M+H]+=882)In a nitrogen atmosphere, compound sub47 (20 g, 30.8 mmol), compound D (9.4 g, 33.8 mmol) and sodium tert-butoxide (8.9 g, 92.3 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (79 mg, 0.154 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 47. (18.4 g, yield 68%, MS: [M+H] + =882)
실시예 48: 화합물 48의 제조Example 48: Preparation of compound 48
질소 분위기에서 화합물 sub48 (20 g, 31.5 mmol), 화합물 D (9.6 g, 34.7 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 9.1 g, 94.6 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (81 mg, 0.158 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 48을 얻었다. (17.2 g, 수율 63 %, MS: [M+H]+=866)In a nitrogen atmosphere, compound sub48 (20 g, 31.5 mmol), compound D (9.6 g, 34.7 mmol) and sodium tert-butoxide (9.1 g, 94.6 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (81 mg, 0.158 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 48. (17.2 g, yield 63%, MS: [M+H] + =866)
실시예 49: 화합물 49의 제조Example 49: Preparation of compound 49
질소 분위기에서 화합물 sub2 (20 g, 41.3 mmol), 화합물 C (12.6 g, 45.54 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (106 mg, 0.207 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 49를 얻었다. (13.6 g, 수율 46 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub2 (20 g, 41.3 mmol), compound C (12.6 g, 45.54 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (106 mg, 0.207 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 49. (13.6 g, yield 46%, MS: [M+H] + =715)
실시예 50: 화합물 50의 제조Example 50: Preparation of compound 50
질소 분위기에서 화합물 sub3 (20 g, 41.3 mmol), 화합물 D (12.6 g, 45.54 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (106 mg, 0.207 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 50을 얻었다. (15.1 g, 수율 51 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub3 (20 g, 41.3 mmol), compound D (12.6 g, 45.54 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (106 mg, 0.207 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 50. (15.1 g, yield 51%, MS: [M+H] + =715)
실시예 51: 화합물 51의 제조Example 51: Preparation of compound 51
질소 분위기에서 화합물 sub4 (20 g, 41.3 mmol), 화합물 D (12.6 g, 45.54 mmol) 및 소듐 터트-부톡사이드 (sodium tert-butoxide, 11.9 g, 124 mmol) 을 자일렌 (200 ml)에 넣고 교반 및 환류했다. 이 후 비스(트리-터트-부틸포스핀)팔라듐(0) (106 mg, 0.207 mmol)을 투입했다. 2 시간 후 반응이 종결되어서 상온으로 식히고 감압하여 용매를 제거했다. 이 후 화합물을 다시 클로로포름 (CHCl3, 500 ml)에 녹이고 물로 2 회 세척한 후 유기층을 분리하여 황산마그네슘 처리 후 여과하여 여액을 감압 증류했다. 농축한 화합물을 실리카 겔 컬럼 크로마토그래피로 정제해서 화합물 51을 얻었다. (14.7 g, 수율 50 %, MS: [M+H]+=715)In a nitrogen atmosphere, compound sub4 (20 g, 41.3 mmol), compound D (12.6 g, 45.54 mmol) and sodium tert-butoxide (11.9 g, 124 mmol) were added to xylene (200 ml) and stirred and reflux. After this, bis(tri-tert-butylphosphine)palladium(0) (106 mg, 0.207 mmol) was added. After 2 hours, the reaction was completed, the mixture was cooled to room temperature, and the solvent was removed under reduced pressure. After this, the compound was again dissolved in chloroform (CHCl 3 , 500 ml), washed twice with water, the organic layer was separated, treated with magnesium sulfate, filtered, and the filtrate was distilled under reduced pressure. The concentrated compound was purified by silica gel column chromatography to obtain compound 51. (14.7 g, yield 50%, MS: [M+H] + =715)
실험예 1Experimental Example 1
ITO(indium tin oxide)가 1,000 Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척했다. 이때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2 차로 걸러진 증류수를 사용했다. ITO를 30 분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10 분간 진행했다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.A glass substrate coated with indium tin oxide (ITO) to a thickness of 1,000 Å was placed in distilled water in which detergent was dissolved and washed with ultrasonic waves. In this case, a product manufactured by Fischer Co. was used as the detergent, and distilled water that was secondarily filtered with a filter manufactured by Millipore Co. was used as the distilled water. After washing ITO for 30 minutes, ultrasonic cleaning was performed for 10 minutes by repeating twice with distilled water. After washing with distilled water, ultrasonic washing was performed with a solvent of isopropyl alcohol, acetone, and methanol, and after drying, it was transported to a plasma cleaner. In addition, after cleaning the substrate for 5 minutes using oxygen plasma, the substrate was transported to a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 정공주입층으로 하기 HI-1 화합물을 1150 Å의 두께로 형성하되 하기 A-1 화합물을 1.5 % 농도로 p-도핑(p-doping)했다. 상기 정공주입층 위에 하기 HT-1 화합물을 진공 증착하여 막 두께 800 Å의 정공수송층을 형성했다. 이어서, 상기 정공수송층 위에 막 두께 150 Å으로 하기 EB-1 화합물을 진공 증착하여 전자저지층을 형성했다. 이어서, 상기 전자저지층 위에 상기 실시예 1에서 제조된 화합물 1과 하기 Dp-7 화합물을 98:2의 중량비로 진공 증착하여 400 Å 두께의 적색 발광층을 형성했다. 상기 발광층 위에 막 두께 30 Å으로 하기 HB-1 화합물을 진공 증착하여 정공저지층을 형성했다. 이어서, 상기 정공저지층 위에 하기 ET-1 화합물과 하기 LiQ 화합물을 2:1의 중량비로 진공 증착하여 300 Å의 두께로 전자 주입 및 수송층을 형성했다. 상기 전자 주입 및 수송층 위에 순차적으로 12 Å 두께로 리튬플로라이드(LiF)와 1,000 Å 두께로 알루미늄을 증착하여 음극을 형성했다. The following HI-1 compound was formed as a hole injection layer on the prepared ITO transparent electrode to a thickness of 1150 Å, but the following A-1 compound was p-doped at a concentration of 1.5%. The following HT-1 compound was vacuum-deposited on the hole injection layer to form a hole transport layer having a thickness of 800 Å. Then, the following EB-1 compound was vacuum-deposited to a film thickness of 150 Å on the hole transport layer to form an electron blocking layer. Then, on the electron blocking layer, the
상기의 과정에서 유기물의 증착속도는 0.4 내지 0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2ⅹ10-7 내지 5ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작했다.In the above process, the deposition rate of organic material was maintained at 0.4 to 0.7 Å/sec, the deposition rate of lithium fluoride of the negative electrode was maintained at 0.3 Å/sec, and the deposition rate of aluminum was maintained at 2 Å/sec, and the vacuum degree during deposition was 2×10 -7 to By maintaining 5×10 -6 torr, an organic light-emitting device was manufactured.
실험예 2 내지 51 및 비교실험예 1 내지 11Experimental Examples 2 to 51 and Comparative Experimental Examples 1 to 11
실험예 1의 유기 발광 소자에서 화합물 1 대신 하기 표 1 및 2에 기재된 화합물을 사용하는 것을 제외하고는, 상기 실험예 1과 동일한 방법으로 유기 발광 소자를 제조했다.An organic light emitting device was manufactured in the same manner as in Experimental Example 1, except that the compounds shown in Tables 1 and 2 were used instead of
상기 실험예 1 내지 51 및 비교실험예 1 내지 11에서 제조한 유기 발광 소자에 10 mA/cm2의 전류를 인가하였을 때, 전압, 효율 및 수명을 측정(6000 nit 기준)하고 그 결과를 하기 표 1 및 2에 나타냈다. 수명 T95는 휘도가 초기 휘도(6000 nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.When a current of 10 mA/cm 2 was applied to the organic light emitting diodes prepared in Experimental Examples 1 to 51 and Comparative Experimental Examples 1 to 11, voltage, efficiency and lifetime were measured (based on 6000 nits), and the results are shown in the table below 1 and 2 are shown. The lifetime T 95 means the time required for the luminance to decrease from the initial luminance (6000 nit) to 95%.
상기 표 1 및 2에 따르면, 실험예의 유기 발광 소자는 비교실험예의 유기 발광 소자에 비해 구동 전압이 현저히 낮고 효율과 수명이 현저히 높다는 점을 확인했다.According to Tables 1 and 2, it was confirmed that the organic light emitting device of the experimental example had a significantly lower driving voltage and significantly higher efficiency and lifespan than the organic light emitting device of the comparative example.
1: 기판 2: 양극
3: 발광층 4: 음극
5: 정공주입층 6: 정공수송층
7: 전자저지층 8: 정공저지층
9: 전자 주입 및 수송층1: Substrate 2: Anode
3: light emitting layer 4: cathode
5: hole injection layer 6: hole transport layer
7: electron blocking layer 8: hole blocking layer
9: Electron injection and transport layer
Claims (9)
.
A compound that is any one selected from the group consisting of:
.
a first electrode; a second electrode provided to face the first electrode; and at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers includes the compound according to claim 1 .
상기 유기물층은 발광층을 포함할 수 있고, 상기 발광층은 호스트 물질을 포함하는, 유기 발광 소자.
8. The method of claim 7,
The organic material layer may include an emission layer, wherein the emission layer includes a host material.
상기 호스트 물질은 상기 화합물로 구성되는 군으로부터 선택되는 어느 하나인 화합물을 포함하는, 유기 발광 소자.9. The method of claim 8,
The host material is an organic light emitting device comprising a compound selected from the group consisting of the compound.
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