KR102282218B1 - Imaging Optical System for 3D Image Acquisition Apparatus, and 3D Image Acquisition Apparatus Including the Imaging Optical system - Google Patents

Abstract

One common objective lens, a first image sensor for detecting light in a visible light band among the lights focused by the objective lens, and a second image sensor for detecting light in an infrared band among the light transmitted through the first image sensor Provided is an imaging optical system for a three-dimensional image acquisition device comprising: and a three-dimensional image acquisition device including an imaging optical system for the three-dimensional image acquisition device.

Description

Imaging Optical System for 3D Image Acquisition Apparatus, and 3D Image Acquisition Apparatus Including the Imaging Optical system

The present invention relates to an imaging optical system for a 3D image acquisition device and a 3D image acquisition device including the same.

Recently, the importance of 3D content has been highlighted with the development and demand increase of 3D display devices capable of displaying images with a sense of depth. Accordingly, a 3D image acquisition device, such as a 3D camera, through which a general user can directly produce 3D content is being studied. Such a 3D camera should be able to obtain depth information along with the existing two-dimensional color image information with one shot.

Depth information about the distance between the surface of the subject and the 3D camera can be obtained using the stereo vision method using two cameras or the triangulation method using structured light and a camera. However, in this method, as the distance of the subject increases, the accuracy of the depth information rapidly decreases, and it is difficult to obtain precise depth information because it is dependent on the surface state of the subject.

To improve this problem, the Time-of-Flight (TOF) method was introduced. TOF technology is a method of measuring the light flight time until the light reflected from the subject is received by the light receiving unit after irradiating the illumination light to the subject. According to the TOF technology, light of a specific wavelength (for example, near infrared rays of 850 nm) is projected onto a subject using an illumination optical system including a light emitting diode (LED) or a laser diode (LD), and light of the same wavelength reflected from the subject is emitted. After light is received by the light receiving unit, a series of processing steps are performed to extract depth information, such as modulating the received light with a modulator having a known gain waveform. Various TOF technologies have been introduced according to this series of light processing processes.

A 3D camera employing the TOF technology generally includes an illumination optical system that emits illumination light to obtain depth information, and an imaging optical system that acquires an image of a subject. The imaging optical system generates a general color image by detecting visible light reflected from the subject, and generates a depth image having only depth information by detecting illumination light reflected from the subject. To this end, the imaging optical system may separately include an objective lens and an image sensor for visible light, and an objective lens and an image sensor for illumination light (ie, a 2-lens 2-sensor structure). However, since the two-lens two-sensor structure has different viewing angles of the color image and the depth image, a separate procedure for accurately matching the two images is required, and the size of the 3D camera may increase and manufacturing cost may increase.

Accordingly, a 3D camera having one common objective lens and two image sensors has been proposed (ie, 1-lens 2-sensor structure). Even in such a 1-lens 2-sensor structure, it is one of the important factors to suppress an increase in the volume and weight of an imaging optical system and a 3D camera, and an increase in manufacturing cost due to this.

One embodiment provides an imaging optical system capable of manufacturing a smaller and simpler three-dimensional image acquisition device having one common objective lens and two image sensors.

In addition, there is provided a three-dimensional image acquisition device including the imaging optical system.

According to one embodiment, one common objective; a first image sensor for detecting light in a visible light band among the light focused by the objective lens; and a second image sensor that detects light in an infrared band among the light transmitted through the first image sensor.

The first image sensor is an organic image sensor including a plurality of pixel units, and a plurality of second pixel electrodes arranged to be spaced apart from each other corresponding to each of the plurality of pixel units, and a plurality of second pixel electrodes arranged continuously between and above the second pixel electrodes. A photoactive layer disposed in the form of a film and including an organic light absorbing material for sensing light in the entire visible ray region commonly included in the plurality of pixel units, disposed in the form of a continuous film on the photoactive layer and common to the plurality of pixel units a first pixel electrode disposed on the light incident side, and a plurality of pixels disposed on the first pixel electrode to correspond to each of the plurality of pixel units and transmit light in a specific wavelength region sensed by each pixel unit of color filters.

The plurality of color filters include at least one first color filter selectively transmitting light of 400 nm to less than 500 nm, at least one second color filter selectively transmitting light of 500 nm to 580 nm, and selectively transmitting light of more than 580 nm to 700 nm It may include one or more third color filters that transmit the light.

the first image sensor includes one or more blue pixels, one or more green pixels, and one or more red pixels;

Each of the one or more blue pixels includes a first light-transmitting electrode positioned on a side where light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and between the first light-transmitting electrode and the second light-transmitting electrode. A photoactive layer comprising an organic material that absorbs light in a wavelength region,

The one or more green pixels may include a first light-transmitting electrode positioned on a side on which light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and a green color positioned between the first light-transmitting electrode and the second light-transmitting electrode, respectively. A photoactive layer comprising an organic material that absorbs light in a wavelength region,

Each of the one or more red pixels includes a first light-transmitting electrode positioned on a side to which light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and between the first light-transmitting electrode and the second light-transmitting electrode. It may include a photoactive layer including an organic material that absorbs light in a wavelength region.

The one or more blue pixels, the one or more green pixels, and the one or more red pixels may be horizontally adjacent to each other.

Among the one or more blue pixels, the one or more green pixels, and the one or more red pixels, two color pixels are arranged horizontally adjacent to each other, and the remaining one color pixels are arranged such that the two color pixels are horizontally adjacent to each other It can be arranged to be stacked vertically on top of the stacked layers.

wherein the one or more blue pixels and the one or more red pixels are arranged adjacent to each other in a horizontal manner, and the one or more green pixels are vertically stacked on a layer in which the one or more blue pixels and one or more red pixels are horizontally adjacently arranged. can

The one or more blue pixels, the one or more green pixels, and the one or more red pixels may be vertically stacked and arranged.

The one or more blue pixels, the one or more green pixels, and the one or more red pixels may be vertically stacked in order from the objective lens side and may be arranged.

The blue pixel includes a photoactive layer including an organic material exhibiting a maximum absorption wavelength (λmax) at 400 nm or more and less than 500 nm,

The green pixel includes a photoactive layer including an organic material exhibiting a maximum absorption wavelength (λmax) in 500 nm to 580 nm, and

The red pixel may include a photoactive layer including an organic material exhibiting a maximum absorption wavelength (λmax) in a range greater than 580 nm and less than or equal to 700 nm.

The second image sensor includes a first light-transmitting electrode positioned on the side on which light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and positioned between the first light-transmitting electrode and the second light-transmitting electrode, in an infrared band. and a photoactive layer comprising an organic material that absorbs light.

The second image sensor may include a silicon photodiode that detects light in an infrared band.

In another embodiment, the imaging optical system may further include, between the first image sensor and the second image sensor, an optical shutter module that transmits light in an infrared band among the light transmitted through the first image sensor.

The optical shutter module may include an optical shutter that modulates light in the infrared band with a predetermined gain waveform.

The optical shutter module may further include a wavelength-selective mirror that reflects light of a visible light band and transmits light of an infrared band on the optical shutter.

The first image sensor, the optical shutter module, and the second image sensor may be sequentially arranged along the optical axis and perpendicular to the optical axis.

In another embodiment, the imaging optical system for the three-dimensional image acquisition device according to the embodiment; a light source irradiating the subject by generating light in the infrared band; an image signal processor configured to generate a three-dimensional image using first and second image signals output from the first image sensor and the second image sensor of the imaging optical system; and a controller for controlling operations of the light source and the image signal processor.

In another embodiment, a 3D camera including the 3D image acquisition device is provided.

In another embodiment, a range finder including the 3D image acquisition device is provided.

In another embodiment, there is provided a motion recognizer including the three-dimensional image acquisition device.

In another embodiment, there is provided a game machine including the 3D image acquisition device.

It is possible to provide an imaging optical system capable of manufacturing a small and simpler three-dimensional image acquisition device having one common objective lens and two image sensors, and a three-dimensional image acquisition device including the same.

1 is a conceptual diagram exemplarily illustrating an imaging optical system for a 3D image acquisition device and a 3D image acquisition device including the same according to an embodiment.
2 is a schematic diagram schematically illustrating a first image sensor included in an imaging optical system for a 3D image acquisition apparatus according to an exemplary embodiment.
3 is a schematic diagram schematically illustrating a first image sensor included in an imaging optical system for a 3D image acquisition apparatus according to another exemplary embodiment.
4 is a schematic plan view of a first image sensor included in the imaging optical system for the 3D image acquisition device shown in FIGS. 2 and 3 .
5 is a schematic diagram schematically illustrating a first image sensor included in an imaging optical system for a 3D image acquisition apparatus according to another exemplary embodiment.
6 is a schematic diagram schematically illustrating a first image sensor included in an imaging optical system for a 3D image acquisition apparatus according to another exemplary embodiment.
7 is a schematic diagram schematically illustrating a second image sensor included in an imaging optical system for a 3D image acquisition device according to an exemplary embodiment.
8 is a conceptual diagram exemplarily illustrating an imaging optical system for a 3D image acquisition device and a 3D image acquisition device including the same according to another embodiment.
9 is a schematic diagram schematically illustrating an optical shutter module included in an imaging optical system for a 3D image acquisition device according to an exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein.

Hereinafter, with reference to the drawings, an imaging optical system for a 3D image acquisition device according to an embodiment, a 3D image acquisition device including the same, and a first image sensor and a second image included in the imaging optical system for the 3D image acquisition device A sensor and an optical shutter module will be described.

In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of description. When a part of a layer, film, region, plate, etc. is said to be “on” another part, it includes not only cases where it is “directly on” another part, but also cases where there is another part in between. Conversely, when we say that a part is "just above" another part, we mean that there is no other part in the middle.

1 is a conceptual diagram exemplarily illustrating a structure of an imaging optical system for a 3D image acquisition device and a 3D image acquisition device including the same according to an embodiment.

Referring to FIG. 1 , a 3D image acquisition apparatus 700 according to an embodiment focuses a light source 710 for generating illumination light having a predetermined wavelength, visible light reflected from an external subject (not shown), and illumination light. , a first image sensor 730 that detects visible light focused by the objective lens 720 to generate a color image, and a depth by detecting the illumination light passing through the first image sensor 730 . A second image sensor 750 generating an image, an image signal processing unit 770 generating a 3D image using a color image and a depth image, and the light source 710 , the first image sensor 730 , and the second image The sensor 750 and the control unit 780 for controlling the operation of the image signal processing unit 770 may be included. Also, the 3D image acquisition apparatus 700 may further include a memory 790 for storing the final 3D image and a display panel 800 for displaying the 3D image.

Light source 710 may use, for example, a light emitting diode (LED) or laser diode (LD) capable of emitting illuminating light having a near infrared (NIR) wavelength of about 850 nm, which is invisible to the human eye for safety reasons. . However, this is only an example, and depending on the design, an illumination light having a different wavelength band and a light source different from the appropriate type may be used. The light source 710 may emit illumination light having a specially defined waveform, such as a sine wave, a ramp wave, or a square wave, according to a control signal received from the controller 780 .

As indicated by grouped with dotted lines in the example shown in FIG. 1, the objective lens 720, the first image sensor 730, and the second image sensor 750 are the imaging optical system ( 500) is formed. Although illustrated in FIG. 1 for convenience, the objective lens 720 may be a zoom lens including a plurality of lens groups.

As described above, among the light focused by the objective lens 720 , the light in the visible region is detected by the first image sensor 730 to generate a color image. As will be described in detail with reference to FIGS. 2 to 6 , the first image sensor 730 may include one or more pixel portions, in particular, color pixels including an organic photoelectric device including a material for sensing light in a visible light region. can Accordingly, most of the light in the visible region among the light focused through the objective lens 720 is absorbed by the organic photoelectric elements of the first image sensor 730 including a material that selectively absorbs the light in the visible region, and the visible light Light in the infrared region among the remaining lights except for, for example, light in a wavelength range of 700 nm to 1,100 nm, which is a near-infrared region, or light in a wavelength range of 800 nm to 1,100 nm, is a second image sensor that detects light in the infrared region ( 750) is absorbed and sensed to generate a depth image.

As described above, in the imaging optical system 500 for the three-dimensional image acquisition device 700 according to the present embodiment, the first image sensor 730 for detecting light in the visible region is located directly behind the objective lens 720, and the Since the second image sensor 750 for detecting light in the infrared band exists behind it, a separate complicated configuration for separating visible light and infrared light is not required. That is, since the first image sensor 730 includes a material that selectively absorbs and detects visible light, most of the visible light is removed from the light that has passed through the first image sensor 730 , and only the remaining light including infrared light is included in the second image sensor. Enter (750). Here, as the second image sensor 750 also selectively detects only infrared light, the imaging optical system 500 for a 3D image acquisition device according to the present embodiment requires a separate configuration for separating visible light and infrared light from incident light. Instead, the entire imaging optical system 500 and the three-dimensional image acquisition device including the same can be made thinner and smaller. In addition, this may reduce the manufacturing cost and increase the light efficiency.

Hereinafter, specific embodiments of the first image sensor 730 constituting the imaging optical system 500 of the 3D image acquisition apparatus 700 shown in FIG. 1 will be described with reference to FIGS. 2 to 6 .

As described above, the first image sensor 730 included in the imaging optical system 500 includes a plurality of pixel units that detect light in a visible light band, and the plurality of pixel units each detect light in a specific visible light region. Optoelectronic devices including organic materials are included.

For example, FIG. 2 is a cross-sectional view schematically illustrating the arrangement of pixels in the first image sensor 730 according to an exemplary embodiment, wherein the first pixel electrode 120 is located on a side where light is incident and is in the form of a continuous film. ), the second pixel electrodes 110B, 110R, and 110G facing the first pixel electrode and disposed separately for each pixel, the first pixel electrode 120 and the second pixel electrodes 110B, 110R, and 110G The photoactive layer 130W which exists in the form of a continuous film therebetween and includes an organic material that absorbs light in the entire visible light band, and a plurality of pixels disposed on the first pixel electrode 120 to correspond to each pixel of color filters 170B, 170R, and 170G.

Hereinafter, a component including 'B' in a reference number is a component included in a blue pixel, a component including a 'G' in a reference number is a component included in a green pixel, and a reference numeral A component including 'R' indicates a component included in the red pixel.

That is, 170B of FIG. 2 is a blue color filter that can selectively transmit light of 400 nm to less than 500 nm, 170G is a green color filter that can selectively transmit light of 500 nm to 580 nm, and 170R is a red color filter. Light of more than 580 nm and 700 nm can be selectively transmitted.

The first pixel electrode 120 and the second pixel electrodes 110B, 110G, and 11R are all transparent electrodes, and thus, the first image sensor 203 receives light in a specific wavelength region of the visible light band for each pixel. It can selectively absorb and transmit the remaining light including infrared light.

As the first pixel electrode 120 and the second pixel electrodes 110B, 110G, and 11R, any light-transmitting electrode for an organic photoelectric device used for manufacturing an image sensor may be used. For example, the first pixel electrode 20 and the second pixel electrodes 110B, 110G, and 11R may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or tin. A metal thin film made of a transparent conductor such as oxide (SnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO), or formed to a thin thickness of several nanometers to several tens of nanometers, or a metal oxide doped It may be a metal thin film formed to a thin thickness of several nanometers to several tens of nanometers, a conductive polymer electrode, or a combination thereof.

The photoactive layer 130W including an organic material absorbing light in the entire wavelength region of the visible light band may absorb light in the entire visible ray region of about 400 nm to about 700 nm. The photoactive layer 130W may include a p-type semiconductor material and an n-type semiconductor material. For example, at least one of the p-type semiconductor material and the n-type semiconductor material may absorb light in the entire visible light region. .

The photoactive layer 130W may include, for example, polyaniline; polypyrrole; polythiophene; poly(p-phenylenevinylene); benzodithiophene; thienothiophene; MEH-PPV(poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene); MDMO-PPV(poly(2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene-vinylene); pentacene; perylene; poly(3,4-ethylenedioxythiophene)( PEDOT), poly(3-alkylthiophene);poly((4,8-bis(octyloxy)benzo[1,2-b:4,5-b′]dithiophene)-2,6-diyl-alt -(2-((dodecyloxy)carbonyl)thieno[3,4-b]thiophene)-3,6-diyl)(poly((4,8-bis(octyloxy)benzo(1,2-) b:4,5-b')dithiophene)-2,6-diyl-alt-(2-((dodecyloxy)carbonyl)thieno(3,4-b)thiophenediyl)-3,6-diyl), PTB1); poly((4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene)-2,6-diyl-alt-(2-((2- ethylhexyloxy)carbonyl)-3-fluorothieno[3,4-b]thiophene)-3,6-diyl)(poly((4,8-bis(2-ethylhexyloxy)benzo[1, 2-b:4,5-b']dithiophene)-2,6-diyl-alt-(2-((2-ethylhexyloxy)carbonyl)-3-fluorothieno[3,4-b]thiophenediyl)-3,6 -diyl)), PTB7); phthalocyanine; tin(II) phthalocyanine (SnPc); copper phthalocyanine; triarylamine; bezidine; pyrazoline; styrylamine; hydrazone; carbazole; thiophene; 3,4-ethylenedioxythiophene (EDOT); pyrrole; phenanthrene; tetracene; naphthalene; rubrene; 1,4,5,8-naphthalene-tetracarboxylic dianhydride (1,4,5,8-naphthalene-tetracarboxylic dianhydride, NTCDA); Alq3; fullerenes (C60, C70, C74, C76, C78, C82, C84, C720, C860, etc.); 1-(3-methoxy-carbonyl)propyl-1-phenyl(6,6)C61(1-(3-methoxy-carbonyl)propyl-1-phenyl(6,6)C61: PCBM), C71-PCBM , C84-PCBM, fullerene derivatives such as bis-PCBM; inorganic semiconductors such as CdS, CdTe, CdSe, ZnO and the like; It may include at least two types selected from derivatives thereof and copolymers thereof, but is not limited thereto.

The color filters 170B, 170R, and 170G transmit light of a specific wavelength region from among the light focused through the objective lens 720 on the first pixel electrode 120, respectively, so that each of the color filters 170B, 170R, and 170G The photoactive layer 130W, which absorbs light in the entire visible light wavelength region, selectively absorbs and senses the light transmitted by each color filter, and the first pixel electrode that exists under the corresponding photoactive layer 130W. By converting into electrical signals through (110B, 110G, 11R), each pixel detects and outputs light in a specific wavelength region. For transparency of the first image sensor 730 , the output of the electrical signal is a transparent thin film transistor ( It may be processed using a TFT: Thin Film Transistor, and the output electrical signal may be transmitted to the image signal processing unit 760 in the 3D image acquisition apparatus 700 illustrated in FIG. 1 .

Next, another embodiment of the first image sensor 730 constituting the imaging optical system 500 of the 3D image acquisition apparatus 700 shown in FIG. 1 will be described with reference to FIG. 3 .

As described above, the first image sensor 730 included in the imaging optical system 500 includes a plurality of pixels that detect light in a visible light band, and the plurality of pixels each detect light in a specific visible light region. Optoelectronic devices comprising a material are included.

The first image sensor shown in FIG. 3 is different from the first image sensor shown in FIG. 2 , wherein each of the blue pixel 100B, the green pixel 100G, and the red pixel 100G is located on the side where the light is incident. The first light-transmitting electrodes 20B, 20G, and 20R, the second light-transmitting electrodes 10B, 10G, and 10R facing the first light-transmitting electrode, and the first light-transmitting electrodes 20B, 20G, and 20R and the second light-transmitting electrode 10B , 10G, 10R) and comprising a photoactive layer (30B, 30G, 30R) comprising an organic material that absorbs light in a specific wavelength region, characterized in that these pixels are horizontally arranged on the same substrate do.

Also, unlike the first image sensor illustrated in FIG. 2 , the first image sensor illustrated in FIG. 3 does not include a color filter on the first light-transmitting electrodes 20B, 20G, and 20R. In the case of the first image sensor according to FIG. 2 , since the photoactive layer 130W is made of a material that absorbs light in a visible light wavelength region, each pixel emits light in a specific wavelength region to absorb light in a specific wavelength region. The transmitting color filter should be disposed on the first light transmitting electrode on which light is incident. However, as the first image sensor shown in FIG. 3 includes the photoactive layers 30B, 30G, and 30R including a material for selectively absorbing light in a different wavelength region, each pixel includes the first image sensor shown in FIG. 2 . It may not include a color filter as in the image sensor.

The photoactive layer 30B of the blue pixel 100B may include a p-type semiconductor material that selectively absorbs light in a blue wavelength region and an n-type semiconductor material that selectively absorbs light in a blue wavelength region, and the green The photoactive layer 30G of the pixel 100G may include a p-type semiconductor material that selectively absorbs light of a green wavelength region and an n-type semiconductor material that selectively absorbs light of a green wavelength region, and the red pixel ( The photoactive layer 30R of 100R) may include a p-type semiconductor material that selectively absorbs light of a red wavelength region and an n-type semiconductor material that selectively absorbs light of a red wavelength region.

The first light-transmitting electrodes 20B, 20G, and 20R and the second light-transmitting electrodes 10B, 10G, and 10R of the first image sensor shown in FIG. 3 are the first pixel electrodes ( 120) and the second pixel electrodes 110B, 110R, and 110G, respectively, may be made of the same material, and therefore, detailed descriptions of these first and second light transmitting electrodes will be omitted.

Meanwhile, FIG. 4 is a plan view schematically illustrating the arrangement of pixels in the first image sensor shown in FIGS. 2 and 3 , and the first image sensor shown in FIGS. 2 and 3 may have the same shape when viewed on a plane. . However, in the case of the first image sensor shown in FIG. 2 , each pixel may be partitioned by color pillars 170B, 170R, and 170G that transmit light in a specific wavelength region sensed by each pixel, whereas FIG. 3 . The first image sensor shown in FIG. 1 may be partitioned by each pixel itself 100B, 100G, 100R, or by the first light-transmitting electrodes 20B, 20G, and 20R of each pixel.

FIG. 5 is a diagram schematically illustrating another embodiment of the first image sensor 730 that is another component of the optical imaging system 500 in the 3D image acquisition apparatus 700 shown in FIG. 1 .

The first image sensor shown in FIG. 5 includes one or more blue pixels 100B, one or more red pixels 100R, and one or more green pixels 100G, wherein the blue pixel 100B and the red pixel 100R are It has a structure in which the green pixels 100G are vertically arranged on each other and vertically arranged on the horizontally arranged blue pixels 100B and red pixels 100R. Each of the blue pixel 100B, the red pixel 100R, and the green pixel 100G is an organic photoelectric device.

That is, the one or more blue pixels 100B include a first light-transmitting electrode 120 positioned on a side where light is incident, a second light-transmitting electrode 110 facing the first light-transmitting electrode 120 , and a first light-transmitting electrode. It may include a photoactive layer 130B positioned between 120 and the second light-transmitting electrode 110 and including an organic material absorbing light in a blue wavelength region, wherein the one or more red pixels 100R emit light. Between the first light-transmitting electrode 120 positioned on the incident side, the second light-transmitting electrode 110 facing the first light-transmitting electrode 120 , and between the first light-transmitting electrode 120 and the second light-transmitting electrode 110 . and may include a photoactive layer 130R including an organic material that absorbs light in a red wavelength region, and the one or more green pixels 100G is a first light-transmitting electrode 120 positioned on a side to which light is incident. , the second light-transmitting electrode 110 facing the first light-transmitting electrode 120, and an organic material positioned between the first light-transmitting electrode 120 and the second light-transmitting electrode 110 and absorbing light in the green wavelength region. The photoactive layer 130G may be included.

The photoactive layer 130B of the blue pixel may include a p-type semiconductor material that selectively absorbs light of a blue wavelength region and an n-type semiconductor material that selectively absorbs light of a blue wavelength region, and the light of the red pixel The active layer 130R may include a p-type semiconductor material that selectively absorbs light in a red wavelength region and an n-type semiconductor material that selectively absorbs light in a red wavelength region, and the photoactive layer 130G of the green pixel includes: It may include a p-type semiconductor material that selectively absorbs light in a green wavelength region and an n-type semiconductor material that selectively absorbs light in a green wavelength region.

The first light transmitting electrode 120 and the second light transmitting electrode 110 of each pixel in the first image sensor shown in FIG. 5 are the first pixel electrode 120 and the second pixel of the first image sensor described with reference to FIG. 2 . Each of the electrodes 110B, 110R, and 110G has the same configuration, and therefore, detailed descriptions of these first and second light transmitting electrodes will be omitted.

Meanwhile, although FIG. 5 illustrates a structure in which the blue pixel 100B and the red pixel 100R are horizontally arranged and the green pixel 100G is vertically stacked thereon, the present invention is not limited thereto, and the blue pixel 100B, Any two pixels among the red pixel 100R and the green pixel 100G may be arranged side by side, and the other pixel may be vertically arranged thereon.

6 illustrates another embodiment of the first image sensor 730 constituting the imaging optical system 500 of the 3D image acquisition apparatus 700 shown in FIG. 1 .

As described with reference to FIGS. 3 and 5 , the first image sensor according to FIG. 6 also includes an organic photoelectric device including a photoactive layer in which one or more pixels absorb and sense light of a different wavelength region, respectively. Light of each wavelength region sensed by these photoelectric devices is converted into an electrical signal through the first light-transmitting electrode in each device, so that light in a specific wavelength region can be detected and output for each pixel. The output electrical signal may be transmitted to the image signal processing unit 760 in the 3D image acquisition apparatus 700 shown in FIG. 1 to generate a color image.

Referring to FIG. 6 , a first image sensor according to an exemplary embodiment includes one or more blue pixels 100B, one or more green pixels 100G, and one or more red pixels 100R, and these blue pixels 100B. , a green pixel 100G, and a red pixel 100R are vertically stacked in order. Each of the blue pixel 100B, the green pixel 100G, and the red pixel 100R is an organic photoelectric device.

That is, each of the one or more blue pixels 100B includes a first light-transmitting electrode 120 positioned on a side where light is incident, a second light-transmitting electrode 110 facing the first light-transmitting electrode, and a first light-transmitting electrode ( 120 and the second light-transmitting electrode 110 and may include a photoactive layer 130B including an organic material absorbing light in a blue wavelength region, and the one or more green pixels 100G may each The first light-transmitting electrode 120 positioned on the incident side, the second light-transmitting electrode 110 facing the first light-transmitting electrode 120 , and between the first light-transmitting electrode 120 and the second light transmitting electrode 110 . and a photoactive layer 130G including an organic material for absorbing light in a green wavelength region, and the one or more red pixels 100R are, respectively, a first light-transmitting electrode positioned on a side to which light is incident. 120, the second light-transmitting electrode 110 facing the first light-transmitting electrode 120, and positioned between the first light-transmitting electrode 120 and the second light-transmitting electrode 110 and absorbing light in the red wavelength region The photoactive layer 130R including an organic material may be included.

The photoactive layer 130B of the blue pixel 100B may include a p-type semiconductor material that selectively absorbs light in a blue wavelength region and an n-type semiconductor material that selectively absorbs light in a blue wavelength region, and the green The photoactive layer 130G of the pixel 100G may include a p-type semiconductor material that selectively absorbs light in a green wavelength region and an n-type semiconductor material that selectively absorbs light in a green wavelength region, and the red pixel ( The photoactive layer 130R of 100R) may include a p-type semiconductor material that selectively absorbs light in a red wavelength region and an n-type semiconductor material that selectively absorbs light in a red wavelength region.

Meanwhile, although FIG. 6 illustrates a first image sensor in which a red pixel 100R, a green pixel 100G, and a blue pixel 100B are vertically stacked in order from bottom to top as an example, the present invention is not limited thereto, and each image Depending on the configuration of the sensor, the stacking order of the blue pixel, the green pixel, and the red pixel may vary.

The first light-transmitting electrode 120 and the second light-transmitting electrode 110 of the first image sensor shown in FIG. 6 are the first pixel electrode 120 and the second light transmitting electrode 110 of the first image sensor described with reference to FIG. 2 . 110B, 110R, and 110G), respectively, and thus, detailed descriptions of these first and second light transmitting electrodes will be omitted.

On the other hand, as shown in FIG. 7, the second image sensor 750 constituting the imaging optical system 500 of the 3D image acquisition device 700 shown in FIG. 1 is similar to the first image sensor 730, The first light-transmitting electrode 20IR is positioned on the side where light is incident, the second light-transmitting electrode 10IR is positioned opposite the first light-transmitting electrode, and is positioned between the first light-transmitting electrode and the second light-transmitting electrode. It may be composed of an organic photoelectric device including a photoactive layer 30IR including a material that selectively detects light in the infrared region.

The photoactive layer 30IR including a material that selectively detects light in the infrared region may include a p-type semiconductor material that selectively absorbs light in the infrared region, and forms a PN junction with the p-type semiconductor material. It may further include an n-type semiconductor material.

The p-type semiconductor material that selectively absorbs light in the infrared region is a semiconductor material in which holes become a plurality of carriers, and may include, for example, a phthalocyanine-based compound capable of absorbing light in a wavelength band of 700 nm or more. Examples of the phthalocyanine-based compound include tin-based, aluminum-based, sodium-based, cesium-based, manganese-based phthalocyanine compounds, and oxy titanium phthalocyanine. Among them, SnPC, which is a tin-based phthalocyanine compound, exhibits light absorption characteristics in a wavelength band of 600 nm to 900 nm.

The n-type semiconductor material is a semiconducting organic material in which electrons are a plurality of carriers, for example, C ₆₀ or C ₇₀ Fullerenes, such as these are mentioned. Alternatively, naphthalene tetracarboxylic anhydride (NTCDA), Alq3 (tris-(8-hydroxyquinoline)aluminium), Bebq2(bis(benzoquinoline)berellium), etc. may be used.

The first light-transmitting electrode 20IR and the second light-transmitting electrode 10IR of the second image sensor include the first pixel electrode 120 and the second pixel electrodes 110B and 110R of the first image sensor described with reference to FIG. 2 ; 110G), respectively, and thus, detailed descriptions of the first light-transmitting electrode and the second light-transmitting electrode will be omitted.

Although not shown in FIG. 7 , a visible ray absorbing layer including a material absorbing light in a visible ray wavelength region may be further formed on the first light transmitting electrode 20IR of the second image sensor 750 . Light of a wavelength of visible light reaching the second image sensor 750 without being absorbed by the first image sensor 730 may be insignificant, but if necessary, the upper portion of the first light transmitting electrode 20IR of the second image sensor 750 is A visible light absorbing layer may be further formed so that light having a wavelength in the visible light region does not transmit therethrough. Alternatively, a time-of-flight (TOF) sensor may be additionally formed on the second image sensor 750 to modulate illumination light or infrared light incident to the second image sensor 750 .

On the other hand, the first image sensor 730 of the optical imaging system 500 for a 3D image acquisition device according to the present embodiment may be made of an organic photoelectric device including a material for absorbing and sensing light in a specific visible light region, Unlike the first image sensor 730 , the second image sensor 750 does not necessarily include an organic photoelectric device. That is, unlike the first image sensor 730 that is positioned in front of the second image sensor 750 to absorb light in the visible light region and transmit the remaining light to the second image sensor 750 , the first image sensor The second image sensor 750 positioned behind the 730 may be formed of an inorganic photoelectric device, for example, a semiconductor imaging device such as a charge-coupled device (CCD) or a complementary metal oxide semiconductor (CMOS).

In addition, since the first image sensor 730 generates a color image by sensing light in the visible light region, it generally includes a plurality of pixels including pixels that detect light in the blue, green, and red regions, and each pixel The amount of incident light is converted into an electrical signal and output. The first image sensor 730 for generating a general color image may have a higher resolution than the second image sensor 750 for generating a depth image having only depth information. Accordingly, the second image sensor 750 may have a smaller size than the first image sensor 730 . When the sizes of the first image sensor 730 and the second image sensor 750 are different, between the color image generated by the first image sensor 730 and the depth image generated by the second image sensor 750 is Inconsistencies in the field of view may occur. That is, the first image sensor 730 having a large size may generate a color image having a wide viewing angle, but the second image sensor 750 may generate a depth image having a relatively narrow viewing angle. Therefore, although not shown in FIG. 1, a reduction optical system having a function of reducing an image (ie, a magnification less than 1) in order to match the viewing angle between the first image sensor 730 and the second image sensor 750 is provided. It may be further disposed between the first image sensor 730 and the second image sensor 750 . Then, since the image reduced by the reduction optical system is incident on the second image sensor 750 , the viewing angle of the depth image generated by the second image sensor 750 may be widened by that much.

As described above, the first image sensor 730 including the organic photoelectric device according to various embodiments to generate a color image, and the illumination light reflected from the remaining subject after light in the visible light region is absorbed by the first image sensor 730 . The imaging optical system 500 according to the embodiment including the second image sensor 750 for detecting and generating a three-dimensional image may be usefully used in various three-dimensional image acquisition devices. Examples of the 3D image acquisition device include, but are not limited to, a 3D camera, a range finder, a motion recognizer, and a game machine.

Meanwhile, the imaging optical system 500 in the 3D image acquisition apparatus 700 according to the embodiment shown in FIG. 1 includes an objective lens 720 , a first image sensor 730 , and a second image sensor 750 . Although an example has been described, the imaging optical system for a 3D image acquisition device according to another embodiment includes illumination light among the light transmitted from the first image sensor 730 between the first image sensor 730 and the second image sensor 750 . , for example, may further include an optical shutter module 740 that transmits light in the infrared region.

8 is a conceptual diagram exemplarily illustrating a structure of an imaging optical system 600 for a 3D image acquisition apparatus and a 3D image acquisition apparatus 900 including the same according to another embodiment.

Referring to FIG. 8 , the 3D image acquisition apparatus 900 according to an embodiment focuses the light source 710 for generating illumination light having a predetermined wavelength, visible light reflected from an external subject (not shown) and the illumination light. a first image sensor 730 that detects visible light focused by the objective lens 720 to generate a color image, and a first image sensor 730 that transmits illumination light among the light transmitted through the first image sensor 730 The optical shutter module 740, the second image sensor 750 for generating a depth image by sensing the illumination light emitted from the optical shutter module 740, and an image signal processing unit for generating a 3D image using the color image and the depth image 770 , and the light source 710 , the first image sensor 730 , the optical shutter module 740 , the second image sensor 750 , and the image signal processing unit 770 for controlling operations A control unit 780 may be included. Also, the 3D image acquisition apparatus 800 may further include a memory 790 for storing the final 3D image and a display panel 800 for displaying the 3D image.

In the example shown in FIG. 8 , as indicated by a dotted line, the objective lens 720 , the first image sensor 730 , the optical shutter module 740 , and the second image sensor 750 are a three-dimensional image acquisition device. (900) constitutes the imaging optical system (600). The optical shutter module 740 is located behind the first image sensor 730 that detects light in the visible light band and emits illumination light, for example, light in the infrared band, among the light transmitted through the first image sensor 730 . 2 may be transmitted through the image sensor 750 .

In the 3D image acquisition apparatus 900 shown in FIG. 8 , among the lights focused by the objective lens 720 , light in the visible region is detected by the first image sensor 730 to generate a color image. As described with reference to FIGS. 2 to 6 , the first image sensor 730 may include one or more pixel units, in particular, color pixels including an organic photoelectric device including a material for sensing light in a visible light region. . Accordingly, most of the light in the visible region among the light focused through the objective lens 720 is absorbed by the organic photoelectric elements of the first image sensor 730 including a material that selectively absorbs the light in the visible region, and the visible light The remaining light, except for , passes through the first image sensor 730 and is transmitted to the optical shutter module 740 . The optical shutter module 740 receives illumination light among the remaining lights, for example, light in an infrared region, for example, light in a wavelength range of 700 nm to 1,100 nm, which is a near-infrared region, or light in a wavelength range of 800 nm to 1,100 nm. Therefore, only light in the infrared region that has passed through the optical shutter module 740 may reach the second image sensor 750 to generate a depth image in the second image sensor 750 .

As described above, in the imaging optical system 600 for the three-dimensional image acquisition device 900 according to the embodiment, the first image sensor 730 for detecting light in the visible light region is located directly behind the objective lens 720, It includes an optical shutter module 740 that transmits light in an infrared band behind the first image sensor 730 , and thereafter, a second image sensor 750 that detects light in the infrared band exists behind the optical shutter. The module 740 does not require a separate complicated configuration for separating visible light and illumination light, that is, visible light and infrared light. That is, since the first image sensor 730 includes a material that selectively absorbs and detects visible light, most of the visible light from the light passing through the first image sensor 730 is removed, and only the remaining light including infrared light is included in the optical shutter module ( As it passes through 740 , the optical shutter module 740 transmits only infrared light to the second image sensor 750 without a separate configuration for separating visible light from incident light. In addition, as the second image sensor 750 selectively absorbs and detects only infrared light, in the imaging optical system 600 for the 3D image acquisition apparatus 900 according to the present embodiment, the optical shutter module 740 receives light from the incident light. Since it does not require a separate configuration for separating visible light and infrared light, it can be made thinner and smaller, and thus the entire imaging optical system 600 and the 3D image acquisition device 900 including the same can also be made smaller and thinner. there is. As a result, the manufacturing cost of the 3D image acquisition apparatus 900 may be reduced and light efficiency may also be increased.

The optical shutter module 740 may be made of any material as long as it can transmit illumination light among the light passing through the first image sensor 730, that is, light in the infrared region, and may be made of any material from visible light or light in other regions, such as illumination light, or infrared light. No additional configuration is required to separate and transmit light in the area.

However, in one embodiment, the optical shutter module 740 removes light in the visible light region that is not absorbed by the first image sensor 730 to more efficiently transmit the light in the infrared region. A wavelength selective mirror, that is, a visible light reflecting layer for reflecting visible light, may be further provided on one or both sides of the , in particular on the surface facing the first image sensor 730 . In this case, some visible light that has not been absorbed by the first image sensor 730 and transmitted may be reflected and removed from the wavelength-selective mirror, and light of an infrared wavelength region passes through the wavelength-selective mirror and is located below the wavelength-selective mirror. may be detected by the second image sensor 750 through an optical shutter that modulates The optical shutter may modulate illumination light, for example, infrared light transmitted from the first image sensor, into a predetermined gain waveform according to a general time-of-flight method (TOF) in order to obtain depth information about the subject. For example, the optical shutter may be a GaAs-based semiconductor modulator capable of high-speed driving of tens to hundreds of MHz.

The light source 710 , the objective lens 720 , the first image sensor 730 , the second image sensor 750 , the image signal processing unit 770 , and the control unit 780 in the 3D image acquisition apparatus 900 shown in FIG. 8 . ), the memory 790, and the configuration of the display panel 800 for displaying a 3D image are the same as those described with reference to FIGS. 1 to 7, and thus detailed descriptions thereof will be omitted.

9 is a diagram schematically illustrating a structure of an optical shutter module 740 according to an exemplary embodiment.

Referring to FIG. 9 , the optical shutter module 740 is disposed on the substrate 10 and includes first and second reflective layers 11 and 16 that reflect light of a specific wavelength band, for example, light of a visible light region; and the crystalline electro-optic thin film layer 14, which is disposed between the second reflective layers 11 and 16 and whose refractive index changes according to an electric field, and the first and second reflective layers 11 and 16 are spaced apart from each other with the electro-optic thin film layer 14 as the center. first and second electrodes 12 and 15 for applying an electric field to the electro-optic thin film layer 14, and between the first electrode 12 and the electro-optic thin film layer 14, and between the second electrode 15 and the electro-optic thin film layer 14 and a conduction prevention layer 13 disposed in at least one region between the two regions to prevent current inflow into the electro-optical thin film layer 14 .

The substrate 10 may be made of a transparent amorphous material, for example, glass, sapphire, silicon, group III-V GaAs, or the like so that light can pass therethrough. The material of the substrate 10 may be selected according to a wavelength band of light to be modulated or whether it is a reflection type or a transmission type.

The first and second reflective layers 11 and 16 may be formed to have high reflectivity with respect to light of a specific wavelength band by alternately stacking two or more types of transparent dielectric thin films having different refractive indices. In addition, instead of the dielectric thin film, a layer having both light transmission and reflection characteristics, such as a thin metal, may be used as the first and second reflective layers 11 and 16 . The first reflective layer 11 and the second reflective layer 16 may be formed of the same material and have the same structure, and at least one of them may be omitted.

The reflectivity of the first reflective layer 11 and the second reflective layer 16 may be the same, and each may be 97% or more. Then, the incident light resonates between the first reflective layer 11 and the second reflective layer 16 with the all-optical thin film layer 14 in the middle, and only light of a narrow wavelength band corresponding to the resonance mode can be transmitted. Accordingly, the structure including the first reflective layer 11 , the electro-optical thin film layer 14 , and the second reflective layer 16 serves as a Fabry-Perot filter having controllable short-wavelength transmission characteristics. The wavelength band of the transmitted light may be controlled according to the refractive index and thickness of the electro-optic thin film layer 14 .

The electro-optic thin film layer 14 may be made of a material whose refractive index changes when an electric field is applied, that is, a material exhibiting an EO (electro-optic) effect. This material has a property of changing a known wavelength of light according to the size of the electric field. have The material may include, for example, _{any one of KTN, LiNbO 3} , PZT, PLZT, and liquid crystal.

The electro-optical thin film layer 14 may also be made of a material whose light absorption rate changes when an electric field is applied, that is, a material exhibiting an electro-absoption (EA) effect. For example, it may include a structure of a multiple quantum well (MQW) using a group III-V semiconductor, and the property of shifting the absorption wavelength in MQW according to the application of an electric field is used.

The first electrode 12 and the second electrode 15 are provided to apply a voltage to form an electric field in the electro-optical thin film layer 14 and may be made of a transparent conductive material.

The conduction prevention layer 13 prevents electrical conduction between at least one of the first and second electrodes 12 and 15 and the electro-optic thin film layer 14 . The conduction blocking layer 13 may be formed of an insulating material including at least one _{of ZrO 2} , TiO ₂ , MgO, CeO ₂ , Al ₂ Oe, HfO ₂ , NbO, SiO ₂ , and Si ₃ N _{4 .} In addition, the type of the insulating material of the current prevention layer 13 may vary depending on the material properties of the electro-optical thin film layer 14 .

The conduction prevention layer 13 may be disposed between the first and electrode 12 and the electro-optic thin film layer 14 as shown in FIG. 9 , or between the electro-optic thin film layer 14 and the second electrode 15 . there is. Alternatively, it may be disposed both between the first electrode 12 and the electro-optic thin film layer 14 and between the second electrode 15 and the electro-optic thin film layer 14 .

Although preferred embodiments have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improved forms of the present invention are also provided by those skilled in the art using the basic concept of the present invention as defined in the following claims. is within the scope of the right.

Claims (20)

one common objective;
a first image sensor for detecting light in a visible light band among the light focused by the objective lens;
a second image sensor sensing light in an infrared band among the light transmitted through the first image sensor; and
and an optical shutter module for transmitting light in an infrared band among the light transmitted through the first image sensor between the first image sensor and the second image sensor,
The first image sensor is an organic image sensor including a plurality of pixel units arranged in a matrix,
a plurality of second pixel electrodes arranged to be spaced apart from each other corresponding to the plurality of pixel portions, respectively;
a photoactive layer disposed in a continuous film form between and on the second pixel electrodes, overlapping all of the second pixel electrodes, and including an organic light absorbing material that detects light in the entire visible light region;
a first pixel electrode disposed in the form of a continuous film on the photoactive layer, overlapping all of the second pixel electrodes, and positioned on a side on which light is incident; and
a plurality of color filters disposed on the first pixel electrode corresponding to each of the plurality of pixel units and transmitting light of a specific wavelength region sensed by each pixel unit;
The objective lens corresponds to the plurality of pixel units in one to a plurality,
The optical shutter module includes a wavelength-selective mirror that reflects light of a visible light band and transmits light of an infrared band, and an optical shutter that modulates light of the infrared band with a predetermined gain waveform.
An imaging optical system for a three-dimensional image acquisition device comprising a. delete In claim 1,
The plurality of color filters includes a first color filter, a second color filter, and a third color filter,
The first color filter selectively transmits light of 400 nm or more and less than 500 nm,
The second color filter selectively transmits light of 500 nm to 580 nm, and
The third color filter is to selectively transmit light of more than 580 nm and 700 nm,
Imaging optical system for 3D image acquisition device. In claim 1,
the first image sensor includes one or more blue pixels, one or more green pixels, and one or more red pixels;
Each of the one or more blue pixels includes a first light-transmitting electrode positioned on a side where light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and between the first light-transmitting electrode and the second light-transmitting electrode. A photoactive layer comprising an organic material that absorbs light in a wavelength region,
Each of the one or more green pixels includes a first light-transmitting electrode positioned on a side where light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and between the first light-transmitting electrode and the second light-transmitting electrode. A photoactive layer comprising an organic material that absorbs light in a wavelength region,
Each of the one or more red pixels includes a first light-transmitting electrode positioned on a side where light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and between the first light-transmitting electrode and the second light-transmitting electrode. A photoactive layer comprising an organic material that absorbs light in a wavelength region,
Imaging optical system for 3D image acquisition device. In claim 4,
An imaging optical system for a three-dimensional image acquisition device, wherein the one or more blue pixels, the one or more green pixels, and the one or more red pixels are all arranged horizontally adjacent to each other. In claim 4,
Among the one or more blue pixels, the one or more green pixels, and the one or more red pixels, two color pixels are arranged horizontally adjacent to each other, and the remaining one color pixels are arranged such that the two color pixels are horizontally adjacent to each other. An imaging optical system for a three-dimensional image acquisition device that is vertically stacked on a layer In claim 6,
The one or more blue pixels and the one or more red pixels are arranged adjacently horizontally, and the one or more green pixels are vertically stacked on a layer in which the one or more blue pixels and the one or more red pixels are horizontally adjacently arranged. Imaging optics for image acquisition devices. In claim 4,
An imaging optical system for a three-dimensional image acquisition device in which the one or more blue pixels, the one or more green pixels, and the one or more red pixels are vertically stacked. The imaging optical system of claim 8, wherein the one or more blue pixels, the one or more green pixels, and the one or more red pixels are sequentially stacked from the side of the objective lens. 10. In any one of claims 4 to 9,
The blue pixel includes a photoactive layer including an organic material exhibiting a maximum absorption wavelength (λmax) at 400 nm or more and less than 500 nm,
The green pixel includes a photoactive layer including an organic material exhibiting a maximum absorption wavelength (λmax) in 500 nm to 580 nm, and
Wherein the red pixel comprises a photoactive layer comprising an organic material exhibiting a maximum absorption wavelength (λmax) in a range greater than 580 nm and less than or equal to 700 nm,
Imaging optical system for 3D image acquisition device. In claim 1,
The second image sensor includes a first light-transmitting electrode positioned on the side on which light is incident, a second light-transmitting electrode facing the first light-transmitting electrode, and positioned between the first light-transmitting electrode and the second light-transmitting electrode in the infrared band. An imaging optical system for a three-dimensional image acquisition device comprising a photoactive layer comprising an organic material that absorbs light. The imaging optical system of claim 1 , wherein the second image sensor includes a silicon photodiode that detects light in an infrared band. delete delete The imaging optical system of claim 1 , wherein the first image sensor, the optical shutter module, and the second image sensor are all sequentially arranged along an optical axis and perpendicular to the optical axis. An imaging optical system for a three-dimensional image acquisition device according to any one of claims 1, 3 to 9 and 11 to 12,
A light source that emits light in the infrared band and irradiates the subject;
an image signal processor configured to generate a three-dimensional image using first and second image signals output from the first image sensor and the second image sensor of the imaging optical system; and
A control unit for controlling operations of the light source and the image signal processing unit
A three-dimensional image acquisition device comprising a. A 3D camera comprising the 3D image acquisition device according to claim 16 . A distance measuring device comprising the three-dimensional image acquisition device according to claim 16 . A motion recognizer comprising the three-dimensional image acquisition device according to claim 16 . A game machine comprising the three-dimensional image acquisition device according to claim 16.

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