KR101666725B1

KR101666725B1 - Nanopore device and method of manufacturing the same

Info

Publication number: KR101666725B1
Application number: KR1020140183043A
Authority: KR
Inventors: 한창수; 최욱
Original assignee: 고려대학교 산학협력단
Priority date: 2014-12-18
Filing date: 2014-12-18
Publication date: 2016-10-17
Also published as: WO2016099108A1; KR20160074149A

Abstract

The nanopore element includes a nanopore structure having a nanopore having an inlet and an outlet, and an inlet and an outlet, the end being exposed to the inside of the nanopore, And a pair of first and second electrodes provided to measure a current flowing to the first electrode.

Description

&Lt; Desc / Clms Page number 1 > NANOPOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a nano-pore device and a method of manufacturing the same, and more particularly, to a nano-pore device capable of analyzing a nano-sized substance such as DNA and a method of manufacturing the nano-pore device.

The nanopore device has the characteristic of controlling very small amount of ion transport and analyzing the substances passing through the nanopore. Therefore, in recent years, the nanopore device has been actively studied.

For example, since a nanopore device has a structure similar to an ion channel of a living organism, a base such as A, G, T, or C included in DNA-like materials passing through a nanopore formed on the nanopore device Sequencing is underway. When a material such as the DNA passes through the nanopore, there is an energy barrier due to electrostatic interaction or geometric limitation. Therefore, the DNA can pass through the energy barrier. Thus, the DNA passing through the nanopore can block the flow of current due to the movement of ions flowing along the inside of the pore. As a result, a relatively low potential difference occurs when the DNA passes through compared to the potential at the time when only normal ions pass, so that the current is reduced. Research on the sequencing of the DNA using the size of the blocking current is under way, which is called a blocking current.

In addition, research is underway to analyze nanomaterials, such as microRNAs, nanowires, and nanoscale polymers, that are smaller than the size of nanopores, as well as DNA.

However, the pair of electrodes included in the nanopore device are generally located in a storage container in which an object such as DNA is stored. In this case, disturbances such as the movement of other materials or ions except the subject existing between the two electrodes occur. The accuracy of the inspection may deteriorate due to the influence of the disturbance.

Further, cloaking may occur at the entrance or exit of the nanopore, so that the entrance of the nanopore is closed and slowly opened again to cause the subject to move into the nanopore. As a result, it is difficult to precisely confirm the movement of the object, and it is difficult to detect a signal due to the flow of the object within the nanopore.

In addition, since the thickness of nanopore is too thick to analyze the nucleotide sequence of existing DNA, it is very difficult to precisely measure the change of blocking current according to the change of salt period interval.

SUMMARY OF THE INVENTION An object of the present invention is to provide a nanopore device capable of accurately measuring a blocking current generated between an inlet and an outlet of a nanopore.

An object of the present invention is to provide a method of manufacturing the nanopore device.

A nanopore element according to an embodiment of the present invention includes a nanopore structure having a nanopore having an inlet and an outlet to allow an object to be inspected to pass therethrough and the nanopore structure being spaced apart from each other between the inlet and the outlet, And a pair of first and second electrodes provided to measure a current flowing into the nanopore.

In one embodiment of the present invention, the nanopore has a size of 100 nm or less and a length of 10,000 nm or less.

In one embodiment of the present invention, the first and second electrodes each of gold, silver, metal, and yes, such as palladium, platinum, hafnium, copper pins, graphite, the reduced graphene, h-BN, WS _2, And MOS ₂ , as shown in FIG.

In one embodiment of the present invention, each of the first and second electrodes may have a donut shape so as to penetrate the nanopore structure in a horizontal direction.

In an embodiment of the present invention, the first and second electrodes may be spaced apart from each other by an insulating layer formed in the vertical direction of the nanopore, and may be formed so as not to overlap each other when viewed in plan.

In an embodiment of the present invention, the first and second electrodes may be spaced apart from each other by an insulating layer formed in a vertical direction of the nanopore, and may be formed to face each other with respect to the nanopore.

Here, the insulating layer may have a gap of 5 nm or less between the first and second electrodes so that a tunneling current may be generated between the first and second electrodes.

The nanopore device according to an embodiment of the present invention may further include a third electrode disposed between the first and second electrodes and configured to control the flow of the inspected object flowing in the nanopore. Here, the third electrode may have an exposed portion exposed in the nanopore at one end thereof, and the exposed portion may be coated with a dielectric material.

In the method of manufacturing a nanopore device according to an embodiment of the present invention, a nanopore structure having a nanopore formed through an inlet and an outlet may be formed so that an object can pass therethrough, The ends of the first and second electrodes are exposed to the inside of the nanopore, and a pair of first electrodes and second electrodes are formed to apply a voltage to the nanopore and measure a current.

In the method of manufacturing a nano-pore device according to an embodiment of the present invention, a pore layer is formed on a substrate, a first electrode layer made of a planar structure is formed on the pore layer, To form a first preliminary pore structure. An interlayer insulating layer is formed on the first electrode layer, and a second electrode layer made of a planar structure is formed on the interlayer insulating layer. Thereafter, an insulating film is formed on the second electrode layer, and the insulating film, the second electrode layer, the interlayer insulating film, the first electrode layer, and the pore layer are sequentially etched to have an inlet and an outlet A nanopore structure in which a nanopore is formed, a first electrode, and a second electrode are formed.

In one embodiment of the present invention, a step of partially etching the substrate to form a first opening at a position corresponding to the nanopore may be performed before forming an interlayer insulating film on the first electrode layer .

In the method of manufacturing a nanopore device according to an embodiment of the present invention, a storage container may be additionally attached so that the inlet is exposed on an insulating film pattern formed by the insulating film.

A method of fabricating a nanopore device according to an embodiment of the present invention includes the steps of: a) forming a first pore layer on a first substrate; b) forming a first electrode layer of a planar structure on the first pore layer Thereby forming a first preliminary pore structure including the first pore layer and the first electrode layer. c) forming an interlayer insulating film on the first electrode layer, and d) preparing a second preliminary pore structure in which the second substrate, the second pillar layer, and the second electrode layer are sequentially formed by using the steps a) to b) . e) placing the second preliminary pore structure on the interlayer insulating film so as to face the first preliminary pore structure, and f) attaching the interlayer insulating film and the second electrode layer. Thereafter, e) etching the second forayer layer, the second electrode layer, the interlayer insulating layer, the first electrode layer, and the first forayer layer sequentially to form a nano-pore structure having an nano-pore having an inlet port and an outlet port, A pore structure, a first electrode, and a second electrode are formed.

In the method of manufacturing a nanopore device according to an embodiment of the present invention, the step f) may include performing one of an anodic bonding process, a plasma bonding process, and a microwave bonding process.

In one embodiment of the present invention, the first substrate may be partially etched to form a first opening at a position corresponding to the nanopore before forming the interlayer insulating film on the first electrode layer, After forming the second electrode layer, the second substrate may be partially etched to form a second opening at a position corresponding to the nanopore.

According to the nano-pore device of the present invention, at least two electrodes formed to be spaced apart from each other between an inlet and an outlet of a nanopore. Therefore, it is possible to measure with improved resolution and reduced noise for ions or nanomaterials passing through the nanopore.

Furthermore, it is possible to analyze an object passing through various measurement signals more effectively. Therefore, the nanopore device can be utilized not only for sequencing DNA and microRNA, but also for analyzing various nanomaterials.

1 is a cross-sectional view illustrating a nanopore device according to an embodiment of the present invention.
2A and 2B are respectively a cross-sectional view and a plan view illustrating a nanopore device according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a nanopore device according to an embodiment of the present invention.
4A to 4H are cross-sectional views illustrating a method of manufacturing a nanopore device according to the present invention.
5A to 5C are cross-sectional views illustrating a method of manufacturing a nanopore device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In the accompanying drawings, the sizes and the quantities of objects are shown enlarged or reduced from the actual size for the sake of clarity of the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprise", "comprising", and the like are intended to specify that there is a feature, step, function, element, or combination of features disclosed in the specification, Quot; or " an " or < / RTI > combinations thereof.

Here, the interlayer distance corresponds to the channel and is defined as an interval therebetween that does not include the thickness of the single layer. However, for layered materials of atomic thicknesses that are difficult to accurately measure, the thickness of some single layers may be included in the interlayer spacing.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Nanopore element

1 is a cross-sectional view illustrating a nanopore device according to an embodiment of the present invention.

Referring to FIG. 1, a nanopore device 10 according to an embodiment of the present invention includes a nanopore structure 100, a first electrode 210, and a second electrode 220.

The nanopore structure 100 is formed with a nanopore 105 having an inlet 101 and an outlet 103 so that the object can pass therethrough.

The nanopore 105 has a size of 100 nm or less and a length of 10,000 nm or less. Further, the nanopore 105 may have a size that widens or narrows toward the bottom.

The first electrode 210 and the second electrode 220 are spaced apart from each other between the inlet and the outlet. The ends of the first electrode 210 and the second electrode 220 are exposed to the inside of the nanopore 105. A voltage is applied to the nanopore 105 through the first electrode 210 and the second electrode 220 and a current flowing into the nanopore 105 can be measured. The exposed portions of the first electrode 210 and the second electrode 220 may be coated using a dielectric material.

The first electrode 210 and the second electrode 220 may be arranged close to each other to ensure a constant resolution. However, the first electrode 210 and the second electrode 220 should be spaced apart from each other such that they are not electrically influenced. That is, it is preferable that the separation distance is ensured such that a leakage current generated between the first and second electrodes 210 and 220 is smaller than a noise generated by the flow of ions in the nanopore device.

As compared with the case where the first and second electrodes are disposed in a reservoir that exists outside the nanopore 105 and accommodates the object to be inspected, the nanopore element 10 according to the embodiments of the present invention The first electrode 210 and the second electrode 220 included are disposed between the inlet 101 and the outlet 103 defining the nanopore 105. Therefore, the influence of the disturbance occurring in the reservoir existing outside the nanopore 105 and accommodating the test object can be suppressed. Further, the nanopore element 10 can measure the change of the electric field generated inside the nanopore 105 with an improved sensitivity.

A pair of first and second electrodes 210 and 220 mounted inside the nano pores 105 are spaced apart from each other by a predetermined distance to form a gap between the first and second electrodes 210 and 220 The blocking current can be precisely measured by the moving subject material.

In one embodiment of the present invention, each of the first and second electrodes 210 and 220 may have a thickness of 1 μm or less. However, considering the size of the nanopore 105, it is sufficient that the first and second electrodes 210 and 220 are separated from each other. There is no particular limitation on the thickness.

In one embodiment of the present invention, each of the first and second electrodes 210 and 220 may be formed of a metal such as gold, silver or copper, a metal compound such as AgCl or a graphene, Materials and composites thereof, or two-dimensional planar materials such as MoS ₂ , WS ₂ , h-BN, and composites thereof. Each of the first and second electrodes 210 and 220 may include an electrochemically stable material whose electrochemical reaction is inhibited with respect to an analyte ion.

Alternatively, a material having excellent electric conductivity such as silicon doped with a metal element is sufficient. Furthermore, a modified two-dimensional planar material doped with an element such as boron (B) or nitrogen may be used for the two-dimensional planar material, and the element that can be doped is not particularly limited. In addition, as a composite of nanomaterials, electrodes such as graphene coated with gold nanoparticles or electrodes composed of a double layer of Cr / Au can be used.

In one embodiment of the present invention, each of the first and second electrodes 210 and 220 may have a donut shape so as to penetrate the nanopore structure 100 in a horizontal direction. Accordingly, the first and second electrodes 210 and 220 may be entirely surrounded along the circumferential direction of the nanopore 105. Thus, the nanopore element 10 can measure the change of the electric field generated in the nanopore 10 with an improved sensitivity.

In an embodiment of the present invention, the ends of the first and second electrodes 210 and 220 inserted in the nanofoure structure 100 may be exposed to the inside of the nanofoil 105 . Thus, the ends of the first and second electrodes 210 and 220 can be in direct physical contact with the flowing ionic fluid. However, the exposed portions of the first and second electrodes 210 and 220 may be shielded by a dielectric material.

2A and 2B are respectively a cross-sectional view and a plan view illustrating a nanopore device according to an embodiment of the present invention.

2A, a nanopore device 10 according to an exemplary embodiment of the present invention includes a nanopore structure 100 and a first electrode 210 and a second electrode 220. Referring to FIG.

The first electrode 210 and the second electrode 220 may be positioned adjacent to each other to measure a tunneling current. At this time, the first electrode 210 and the second electrode 220 may have a half donut shape. An insulating layer may be interposed between the first and second electrodes 210 and 220. Also, the first and second electrodes 210 and 220 may be symmetric with respect to the nanopore 105 in plan view.

In this case, when the insulating film formed between the first and second electrodes 210 and 220 has a thickness of about 1 nm in the horizontal direction, a tunneling current is generated between the first and second electrodes 210 and 220 . In this case, when the inspected object flows into the nanopore 105 between the first and second electrodes 210 and 220, the magnitude of the tunneling current changes, Can be measured. For example, when any one of DNA bases is located on the first and second electrodes 210 and 220, a tunneling current value between the first and second electrodes 210 and 220 Can be changed.

Referring to FIG. 2A again, the first and second electrodes 210 and 220 may be spaced apart from each other by the insulating layer and may not be overlapped with each other when viewed in plan view. That is, the first and second electrodes 210 and 220 are positioned so as to surround the nanopore 105 around the nanopore 105 and are not overlapped with each other when viewed in plan view. Thus, the occurrence of leakage current due to mutual interference between the first and second electrodes 210 and 220 can be suppressed.

Referring to FIG. 2B, the first and second electrodes 210 and 220 are disposed to face each other with the nanopore 105 as a center.

When the nanomaterial passes between the first and second electrodes 210 and 220, the flow of the nanomaterial interferes with the current flow in the horizontal direction between the first and second electrodes 210 and 220 . Thus, the blocking current value can be measured between the first and second electrodes 210 and 220.

At this time, the first and second electrodes 210 and 220 may have a height difference in a forming position along the vertical direction within the nanopore 105. Therefore, as the size of the nanopore 105 is small, current flow between the first and second electrodes 210 and 220 may be sensitively disturbed. Of course, the first and second electrodes 210 and 220 may be formed on the same plane, but such a method is very difficult to manufacture. Therefore, a method of manufacturing a nanopore device having the above structure can be relatively easy.

3 is a cross-sectional view illustrating a nanopore device according to an embodiment of the present invention.

A nanopore device according to an embodiment of the present invention includes a nanopore structure 100 and a first electrode 210 and a second electrode 220. Further, the nanopore device further includes a third electrode 230 between the first and second electrodes.

The voltage applied to the third electrode 230 is a gate voltage V _G , the voltage applied to the first electrode 210 is a source voltage V _S and the voltage applied to the second electrode 220 is Drain voltage (V _D ). (Not shown) for applying an electric signal to the first to third electrodes 210, 220 and 230. The electrical signal unit may be connected to the first to third electrodes through a probe (not shown).

The nano pore element 10 functions as an ionic field effect transistor (IFET) by a gate voltage (V _G ), a source voltage (V _s ) and a drain voltage (V _D ) can do. When the ions contained in the subject move through the nanopore, an ion current flows and the nanopore 105 acts as a channel for ion movement. Cations and anions ionized from the object can be moved in a specific direction by the source voltage V _S and the drain voltage V _D applied to the first and second electrodes 210 and 220, respectively. At this time, the ON state and the OFF state of the transistor can be controlled by the gate voltage V _G applied to the third electrode 230.

In an embodiment of the present invention, each end of the third electrode 230 embedded in the nanopore structure 100 may be exposed to the inside of the nanopore 105. Whereby the end of the third electrode 230 can be in direct physical contact with the flowing ionic fluid. However, the exposed portion of the third electrode 230 may be coated by a dielectric material.

Manufacturing method of nanopore device

4A to 4H are cross-sectional views illustrating a method of manufacturing a nanopore device according to the present invention.

Referring to FIG. 4A, a forer layer 113 is formed on a substrate 110. The forlayer nitriding the substrate 110 made of silicon. Whereby the upper surface of the substrate 110 can be converted to silicon nitride to form a foraminous layer.

Referring to FIG. 4B, the substrate 110 is partially etched to form a first opening 111 at a position corresponding to the nanopore. A mask pattern (not shown) may be formed on the lower surface of the substrate 110 to etch the substrate 110, and then the substrate 110 may be etched using the mask pattern as an etch mask. have.

Referring to FIG. 4C, a first electrode layer 115 having a planar structure is formed on the forer layer 113 to form the first preliminary pore structure including the forer layer 113 and the first electrode layer 115 117 are formed.

The first electrode layer may be formed of a metal such as gold, silver, copper, a metal compound such as AgCl or a carbon nanomaterial such as graphene or reduced graphene, and a composite thereof or a two-dimensional plane such as MoS ₂ , WS ₂ , Materials and complexes thereof. Meanwhile, the first electrode layer may include an electrochemically stable material in which an electrochemical reaction is inhibited with respect to an analyte ion.

For example, to form the first electrode layer 115, a graphene thin film formed on the copper foil may be transferred onto the forerun layer. The graphene thin film may be formed through a chemical vapor deposition process.

Referring to FIG. 4D, an interlayer insulating layer 120 is formed on the first electrode layer 115. The interlayer insulating layer 120 may be formed using a metal oxide such as aluminum oxide. The interlayer insulating layer 120 may be formed through a chemical vapor deposition process.

Referring to FIG. 4E, a second electrode layer 125 having a planar structure is formed on the interlayer insulating layer 120.

The second electrode layer 125 may be formed of a metal such as gold, silver or copper or a metal compound such as AgCl or a carbon nano material such as graphene or reduced graphene and a composite thereof or a metal such as MoS ₂ , WS ₂ , h-BN Dimensional planar material and a composite thereof. Meanwhile, the second electrode layer 125 may include an electrochemically stable material which is inhibited from being electrochemically reacted with ions of the analyte.

For example, in order to form the second electrode layer 125, a graphene thin film formed on the copper foil may be transferred onto the forerun layer. The graphene thin film may be formed through a chemical vapor deposition process.

In one embodiment of the present invention, each of the first and second electrode layers 115 and 125 may be patterned to have a predetermined shape (see FIGS. 2A and 2B). A photolithography process, an e-beam lithography process, a focused ion beam (FIB) process, or a nanoimprint process may be used to pattern the first and second electrode layers 115 and 125, respectively. . Thereby forming each of the first and second electrodes.

Referring to FIG. 4F, an insulating layer 140 is formed on the second electrode layer 125. The insulating layer 140 may be formed using a metal oxide such as aluminum oxide. The insulating layer 140 may be formed through a chemical vapor deposition process.

Referring to FIG. 4G, the insulating layer 140, the second electrode layer 125, the interlayer insulating layer 120, the first electrode layer 115, and the forlayer layer 113 are sequentially etched, A nano pore 105 having an inlet port 101 and an outlet port 103 is formed. The nanopore structure 100 in which the nanopores 105 are formed includes a foramin layer pattern 113a, an interlayer insulating layer pattern 120a, and an insulating layer pattern 140a. The first electrode 210 and the second electrode 220 patterned from the first electrode layer 115 and the second electrode layer 125 may be formed. In other words, a photolithography process, an electron beam lithography process, or a focused ion beam process can be used to form the nanopore 105.

As compared with the case where the first and second electrodes are disposed in a reservoir existing outside the nanopore and accommodating the object, the nanopore device 10 according to the embodiments of the present invention, The first electrode 210 and the second electrode 220 included in the element 10 are disposed between the inlet 101 and the outlet 103 defining the nanopore 105. Therefore, the influence of the disturbance occurring in the reservoir which exists outside the nanopore 105 and accommodates the object can be suppressed. Further, the nanopore element 10 can measure the change of the electric field generated inside the nanopore 105 with an improved sensitivity.

In an embodiment of the present invention, the first storage vessel 310 may be formed such that the inlet 101 is exposed on the insulating layer pattern 140a. The second storage container 320 may be formed to expose the outlet 103 at a lower portion of the substrate.

5A to 5C are cross-sectional views illustrating a method of manufacturing a nanopore device according to the present invention.

5A, a first pillar layer 113 is formed on a first substrate 110, a first electrode layer 115 made of a planar structure is formed on the first pillar layer 113 A first preliminary pore structure 117 including the first pore layer 113 and the first electrode layer 115 is formed. Thereafter, c) an interlayer insulating layer 120 is formed on the first electrode layer 115.

The second preliminary pore structure 417 in which the second pore layer 413 and the second electrode layer 415 are sequentially formed on the second substrate 410 is prepared by performing steps a) to b) do.

Then, the second preliminary pore structure 417 is positioned on the interlayer insulation film 120 so as to face the first preliminary pore structure 117.

Referring to FIG. 5B, the interlayer insulating layer 210 and the second electrode layer 415 are attached. For example, the interlayer insulating layer 210 and the second electrode layer 415 may be attached by performing one of an anodic bonding process, a plasma bonding process, and a microwave bonding process. This can prevent the object from penetrating into the interface between the interlayer insulating film 210 and the second electrode layer 415.

5C, the second pillar layer 413, the second electrode layer 415, the interlayer insulating layer 210, the first electrode layer 115, and the first pillar layer 113 are sequentially etched, The nanopore structure 100, the first electrode 210 and the second electrode 220 in which the nanopores 105 having the inlet 101 and the outlet 103 are formed are formed so that the inspected object can pass therethrough.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

10: Nano-pore device 100: Nano-pore structure
101: inlet 103: outlet
105: Nano Pore 110: Substrate
113: forer layer 115: first electrode layer
117: first preliminary pore structure 120: interlayer insulating film
125: second electrode layer 140: insulating film
210: first electrode 220: second electrode
230: third electrode 310: first container
320: second container

Claims

A nano-pore structure in which a nanopore having an inlet and an outlet are formed so that the object can pass through; And
And a pair of first electrodes and a second electrode which are spaced apart from each other between the inlet and the outlet and whose ends are exposed to the interior of the nanopore and are capable of measuring a current flowing into the nanopore,
Wherein the first and second electrodes are formed so as not to overlap each other when viewed from a plan view.

The method according to claim 1,
Wherein the nanopore has a size of 100 nm or less and a length of 10,000 nm or less.

The method of claim 1 wherein each of the first and second electrodes is yes comprises a pin, graphite, the reduced graphene, h-BN, WS _2, and at least one selected from the substance groups of the two-dimensional form to which it belongs MOS ₂ Lt; / RTI >

The nanopore element according to claim 1, wherein each of the first and second electrodes includes at least one selected from the group consisting of gold, silver, palladium platinum, hafnium, and copper.

The nanopore element according to claim 1, wherein each of the first and second electrodes has a half donut shape so as to penetrate the nanopore structure in a horizontal direction.

The nanopore element according to claim 1, wherein each of the first and second electrodes is spaced apart from each other by an insulating layer formed in a vertical direction of the nanofoils.

The nano-pore device according to claim 1, wherein each of the first and second electrodes is spaced apart from each other by an insulating layer formed in a vertical direction of the nano-pores, .

The method as claimed in any one of claims 6 and 7, wherein the insulating film has a gap of 5 nm or less between the first and second electrodes so that a tunneling current is generated between the first and second electrodes Wherein the nano-pore element is provided to be capable of generating a magnetic field.

The nanopore element according to claim 1, further comprising a third electrode disposed between the first and second electrodes and controlling the flow of the inspected object flowing inside the nanopore.

The nanopore element according to claim 9, wherein the third electrode has an exposed portion exposed at the inside of the nanopore at one end thereof, and the exposed portion is coated with a dielectric material.

Forming a nano-pore structure having a nano-pore passing through an inlet and an outlet to allow the object to pass therethrough; And
Forming a pair of first and second electrodes spaced apart from each other between the inlet and the outlet and having an end exposed to the inside of the nanopore and measuring a current flowing into the nanopore; Lt; / RTI >
Wherein the first and second electrodes are formed so as not to overlap each other when viewed in a plan view.

Forming a foraminous layer on the substrate:
Forming a first electrode layer made of a planar structure on the forer layer to form a first pre-pore structure including the forer layer and the first electrode layer;
Forming an interlayer insulating film on the first electrode layer;
Forming a second electrode layer having a planar structure on the interlayer insulating film;
Forming an insulating film on the second electrode layer;
A nano-pore structure in which a nanopore having an inlet port and an outlet port is formed so that the insulating layer, the second electrode layer, the interlayer insulating layer, the first electrode layer, and the pore layer are processed, And forming a second electrode,
Wherein the first and second electrodes are formed so as not to overlap each other when viewed in a plan view.

13. The method of claim 12, further comprising forming a first opening at a position corresponding to the nanopore by partially etching the substrate before forming an interlayer insulating film on the first electrode layer / RTI >

13. The method of claim 12, further comprising the step of attaching the storage container such that the insulating layer is exposed to the insulating film pattern formed through the processing step.

a) forming a first forayer on the first substrate;
b) forming a first electrode layer made of a planar structure on the first forer layer to form a first pre-pore structure including the first forer layer and the first electrode layer;
c) forming an interlayer insulating film on the first electrode layer;
d) preparing a second preliminary pore structure in which a second substrate, a second pore layer, and a second electrode layer are sequentially formed by using the steps a) to b);
e) positioning the second pre-pore structure on the interlayer dielectric to face the first pre-pore structure;
f) attaching the interlayer insulating layer and the second electrode layer; And
e) a process step is performed on the second pore layer, the second electrode layer, the interlayer insulating film, the first electrode layer, and the first pore layer to form a nano-pores having nano-pores having an inlet port and an outlet port, Forming a pore structure, a first electrode, and a second electrode on a substrate;

[16] The method of claim 15, wherein step (f) comprises one of an anodic bonding process, a plasma bonding process, and a microwave bonding process.

16. The method of claim 15, further comprising forming a first opening at a position corresponding to the nanopore by partially etching the first substrate before forming an interlayer insulating film on the first electrode layer,
And forming a second opening at a position corresponding to the nanopore by partially etching the second substrate after forming the second electrode layer.

16. A method according to any one of claims 12 to 15,
And patterning the first and second electrode layers, respectively. &Lt; RTI ID = 0.0 > 11. < / RTI >