KR101034505B1 - Gas supplying apparatus and substarate treating apparatus with it - Google Patents

Abstract

The present invention relates to a gas supply device and a substrate processing apparatus having the same. The substrate processing apparatus includes a gas supply device installed at the top of the chamber to uniformly supply process gas into the chamber. The gas supply device includes a gas ring to which each of the plurality of gas nozzles is mounted. The gas ring is provided with a fastening member for fixing the respective gas nozzles. The fastening member has a structure in which the gas nozzles are inserted into and fixed to the gas rings at different depths. In addition, the fastening member includes an elastic member and a sealing member to be coupled to the gas nozzle in multiple stages. According to the present invention, each of the gas nozzles is coupled to the gas ring in a multi-stage, so that the position of the gas nozzles can be easily adjusted in order to form a desired film quality in the plasma process.

Substrate Processing Equipment, Gas Nozzle, Gas Ring, Fastening Member, Multi-stage Coupling

Description

GAS SUPPLYING APPARATUS AND SUBSTARATE TREATING APPARATUS WITH IT}

The present invention relates to a substrate processing apparatus, and more particularly, to a gas supply apparatus equipped with a plurality of gas nozzles and a substrate processing apparatus having the same.

The substrate processing apparatus for processing a plasma process processes an etching process for removing an unnecessary portion of the substrate by a plasma formed inside the chamber, a deposition process for depositing a desired film on the surface of the substrate, and the like. Plasma is generally generated by creating an electromagnetic field in the process gas supplied inside the chamber. For example, an electrode is provided on the upper and lower portions of the chamber, and high frequency power is applied to the upper and lower electrodes to ionize the supplied process gas to form a plasma atmosphere on the upper surface of the semiconductor substrate. The plasma processing apparatus includes a shower head and a plurality of gas nozzles that uniformly supply and spray process gas into the chamber. The shower head is disposed in the center of the upper part of the chamber to supply the process gas toward the inside of the chamber. Gas nozzles are arranged to be spaced at the edge of the upper portion of the chamber to supply process gas into the chamber.

Referring to FIG. 1, the substrate processing apparatus 10 includes a chamber 2 providing an internal space for processing a plasma process, a ceramic dome 4 covering an upper portion of the chamber 2, and an electromagnetic field inside the chamber 2. And an antenna coil 12 forming a recess, a fixing member 14 for fixing the antenna coil 12, and an electrostatic chuck 6 provided inside the chamber 2 to seat the wafer W thereon. The substrate processing apparatus 10 penetrates through the center of the ceramic dome 4 and the shower head (or top nozzle) 8 for supplying a process gas to the chamber 2, and between the ceramic dome 4 and the chamber 2. It includes a gas ring (20) is provided in, a plurality of gas nozzles (or side nozzles) 30 for injecting the process gas into the chamber (2). A gas flow passage 22 is installed in the gas ring 20 to receive process gas from a gas supply source (not shown), and supply the process gas to the plurality of gas nozzles 30.

The substrate processing apparatus 10 applies a high frequency power supply to the antenna coil 12. The antenna coil 12 is mounted to the fixing member 14 in which the plurality of grooves 16 are formed to be fixed and installed on the ceramic dome 4. The high frequency power source is tuned through the antenna coil 12 to induce an electromagnetic field in the chamber 2. At the same time, the substrate processing apparatus 10 introduces a process gas into the chamber 2 through the shower head 8 and the plurality of gas nozzles 30, and the induced electromagnetic field ionizes the process gas so that the chamber 2 is discharged. To form a plasma within. The plasma thus formed reacts with the surface of the wafer W seated on the electrostatic chuck 20 to process an etching or deposition process.

The gas nozzles 30 are arranged at regular intervals in the gas ring 20 installed between the chamber 12 and the ceramic dome 4. That is, a plurality of gas rings 20 are arranged at regular intervals such that the gas nozzles 30 face the space inside the chamber 2 at the upper end of the chamber 2, and a gas supply source (not shown) that supplies various process gases, respectively. Process gases are supplied from the process gas and the mixed gas into the chamber 2 through the gas nozzles 30.

Referring to FIG. 2, three gas nozzles 30 are formed in one set 40, nine sets 40 are installed in the gas ring 20, and a first gas source and a second Respectively connected to the gas source. At this time, each set 40 includes a first gas nozzle 30a and a third gas nozzle 30c for injecting a first gas into the chamber 2, and a second gas nozzle for injecting a second gas ( 30b). For example, the first gas is silane gas and the second gas is oxygen gas.

This gas nozzle 20 is provided with one discharge port 36 in the nozzle body 32, as shown in FIG. The nozzle body 32 has a fastening portion 38 inserted into and fixed to the gas ring 20 at one end thereof, and one discharge hole 36 at the other end thereof. The gas ring 20 is provided with a groove 26 into which the fastening portion 38 is inserted and fixed. For example, the groove 26 and the fastening portion 38 are each threaded and screwed. The discharge port 36 is connected to the gas flow passage 24 connected to the gas supply sources (for example, the silane gas supply source and the oxygen gas supply source) to inject the process gas straight in the same direction as the gas supply passage 34.

However, since the gas nozzle 30 is directly coupled to the gas ring 20 through the groove 26, the gas ring 20 and the gas may be damaged due to abrasion of the groove 26 and the fastening portion 38 when used for a long time. The lifetime of the nozzle 30 is shortened. In addition, in order to form a desired film quality in response to the process conditions, the process gas must be injected at various locations. However, since the gas nozzle is fixedly coupled to the gas ring, it is impossible to inject the process gas into the chamber 10 so as to form a desired thickness of the film, resulting in a lower deposition rate in the deposition process or a user desired Process map tuning for controlling the thickness of the film suitable for the part is difficult.

An object of the present invention is to provide a gas supply device for fixing a plurality of gas nozzles and a substrate processing apparatus having the same.

Another object of the present invention is to provide a gas supply device which is easy to adjust a process map, and a substrate processing apparatus having the same.

Still another object of the present invention is to provide a gas supply device for extending the service life and a substrate processing device having the same.

In order to achieve the above objects, the gas supply apparatus of the present invention has one feature in that it is possible to fasten a plurality of gas nozzles in a multi-stage installation. As such, the gas supply device may provide a thickness formation of a film quality desired by a user.

According to this aspect of the invention, there is provided a gas supply apparatus comprising: a plurality of gas nozzles; A gas ring configured to provide a plurality of grooves in which the gas nozzles are mounted at predetermined intervals, the gas supply source supplying at least one process gas and the grooves to supply process gases to the gas nozzles; And a fastening member inserted into the groove to provide each of the gas nozzles to be coupled to the gas ring at different lengths.

In one embodiment, the groove; One surface disposed inside the gas ring is opened, and the other surface is provided in a cylindrical shape connected to a gas flow path connected to the gas supply source.

In another embodiment, the gas nozzle provides an insertion portion inserted into the groove and at least two protrusions on the outside of the insertion portion. And the fastening member; A housing having a front surface inserted into and fixed to the groove and having an insertion portion in which the projection portion is formed; A plurality of spaces in which the protrusion is accommodated and the protrusion is rotatable inside the housing; The protrusions may be inserted into the spaces in multiple stages, including a plurality of protrusions disposed between the spaces to fix the protrusions rotated in the spaces so as not to be separated from the outside.

In another embodiment, the gas nozzle is inserted into one of the spaces and rotated to the fastening member to be fixed to the fastening member.

In another embodiment, the spaces; A first space provided between the front surface and the first protrusion, the protrusion being inserted into and accommodated in the first length of the fastening member, the rotatable protrusion being rotated by the rotation of the gas nozzle; A second space provided between the first protrusion and the second protrusion and inserted into and accommodated in the second length of the fastening member longer than the first length, wherein the protrusion is rotatable by rotation of the gas nozzle; ; A third space provided between the second protrusion and the lower surface of the housing, the protrusion being inserted into and received at a third length of the fastening member longer than the second length, such that the protrusion is rotated by the rotation of the gas nozzle; It includes.

In another embodiment, the fastening member; An elastic member is further included between the insertion portion and the lower surface portion of the housing. The elastic member presses the insertion portion inserted into each of the spaces into the gas ring.

In another embodiment, the elastic member is provided between the third space and the lower surface of the housing.

In another embodiment, the fastening member; A sealing member is provided between the insertion portion and the lower surface of the housing to prevent the gas nozzle from being damaged.

According to another feature of the present invention, there is provided a substrate processing apparatus having a gas supply device in which a plurality of gas nozzles are installed in different lengths. Such a substrate processing apparatus of the present invention can provide a thickness formation of a film quality desired by a user.

A substrate processing apparatus of the present invention according to this aspect includes a chamber for process processing; A substrate support member installed in the chamber and supporting the substrate; It includes a gas supply device for supplying a process gas to the chamber. Wherein the gas supply device is; A plurality of gas nozzles; A gas ring configured to provide a plurality of grooves in which the gas nozzles are mounted at predetermined intervals, the gas supply source supplying at least one process gas and the grooves to supply process gases to the gas nozzles; And a fastening member inserted into the groove to provide each of the gas nozzles to be coupled to the gas ring at different lengths.

In one embodiment, the groove; One surface disposed inside the gas ring is opened, and the other surface is provided in a cylindrical shape connected to a gas flow path connected to the gas supply source.

In another embodiment, the gas nozzle provides an insertion portion inserted into the groove and at least two protrusions on the outside of the insertion portion. Wherein the fastening member; A housing having a front surface inserted into and fixed to the groove and having an insertion portion in which the projection portion is formed; A plurality of spaces in which the protrusion is accommodated and the protrusion is rotatable inside the housing; The protrusions may be inserted into the spaces in multiple stages, including a plurality of protrusions disposed between the spaces to fix the protrusions rotated in the spaces so as not to be separated from the outside.

In another embodiment, the gas nozzle is inserted into one of the spaces and rotated to the fastening member to be fixed to the fastening member.

In another embodiment, the fastening member; An elastic member is further included between the insertion portion and the lower surface portion of the housing. Here, the elastic member presses the insertion portion inserted into each of the spaces into the gas ring.

In another embodiment, the gas supply device; It further comprises a shower head is installed in the upper center of the chamber for supplying a process gas.

As described above, the gas supply device of the present invention is provided with a fixing groove inside the gas ring, by providing a fastening member to insert the gas nozzle in any one of the multi-step groove, it is easy to assemble and disassemble the gas nozzle. .

In addition, the gas supply device of the present invention can increase the service life by preventing wear of the gas ring and the gas nozzle by installing the gas nozzle in the gas ring in a one-touch manner to press and rotate for each step.

Furthermore, the substrate processing apparatus provided with the gas supply apparatus of this invention makes process map tuning easy by attaching a gas nozzle to a gas ring in multiple stages.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and the like of the components in the drawings are exaggerated in order to emphasize a clearer explanation.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 4 to 6.

4 is a diagram illustrating a configuration of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 4, the substrate processing apparatus 100 of the present invention includes a gas supply device 110 to 130 that facilitates process map tuning for adjusting the thickness of a film suitable for a desired portion of a user. do.

The substrate processing apparatus 100 is a device for processing a plasma process, and processes a deposition process of a semiconductor substrate, that is, a wafer W, using plasma.

Specifically, the substrate processing apparatus 100 includes chambers 102 and 104 which provide a space for processing a wafer W, a substrate supporting member 106 that supports the wafer W, and a chamber 102. 104) includes a gas supply device (110 to 130) for supplying a process gas into the interior. The gas supply devices 110 to 130 include a gas ring 110, a gas nozzle 120, and a shower head 130.

Chambers 102 and 104 include a cylindrical lower chamber 102 with an open top and a cover 108 covering the open top of the lower chamber 102. An upper chamber 104 and a gas ring 110 are provided between the lower chamber 102 and the cover 108 to seal an interior space of the chambers 102 and 104. The cover 108 is provided with a ceramic dome having a top sealed and a bottom open, and a fixing member 138 fixedly installing the antenna coil 132 on the top. The cover 108 is installed through the shower nozzle 130 in the center. The gas ring 110 is provided with a plurality of gas nozzles 120 at regular intervals. The antenna coil 132 is supplied with high frequency power to form an electromagnetic field inside the chambers 102 and 104.

The substrate support member 106 may be an electrostatic chuck (ESC) capable of fixing the wafer (W) by using electrostatic force, and optionally the wafer (W) by a mechanical chuck or vacuum capable of clamping through a mechanical structure. Adsorbing vacuum chucks can be used. In addition, the substrate support member 106 is connected to the drive shaft 134 at the bottom, the drive shaft 134 is connected to the drive unit 136 at the bottom. The driving unit 136 generates a rotational force to rotate the driving shaft 134 and the substrate supporting member 106. Therefore, the wafer W seated on the substrate support member 106 rotates together with the substrate support member 106.

In addition, the gas supply apparatuses 110 to 130 are installed in the gas ring 110 and the gas ring 110, and a plurality of gas nozzles supplying process gas into the chambers 102 and 104 from edges of the chambers 102 and 104. 120 and a shower head 130 for supplying a process gas into the chambers 102 and 104 from the chambers 102 and 104. The shower head 130 penetrates through the center of the cover 108 to receive a process gas from a gas source (not shown) to uniformly process the entire interior of the chambers 102 and 104 from the center of the chambers 102 and 104. Supply gas. The gas nozzles 120 are installed in the gas ring 110 at a plurality of regular intervals. The gas nozzles 120 are connected to the gas flow passage 114 provided inside the gas ring 110, and are supplied with the process gas. The gas nozzles 120 receive the same process gas or different process gases as the shower nozzle 130 and supply process gases into the chambers 102 and 104 according to a process recipe.

Referring to FIG. 5, the gas nozzle 120 may include a plurality of inserting portions 124 inserted into grooves of the gas ring 110 at one end of the body 122, and a plurality of examples outside the inserting portion 124. At least two protrusions 126 are provided. The protrusion 126 is provided with a length sufficient to be inserted, received and rotated and fixed inside the fastening member 140. Therefore, even when the gas nozzle 120 is used for a long time, damage can be minimized. In addition, the gas nozzle 120 is provided with a discharge port at the other end of the body 122, the discharge port is connected to the gas supply passage in the body.

The gas ring 110 provides a plurality of grooves in which the gas nozzles 120 are mounted at regular intervals. The grooves have an inner side open, and the other side is connected to a gas supply source for supplying a process gas, thereby inserting a gas supply line 112 for supplying a process gas to the gas nozzles 120. The inserted gas supply line 112 is connected to the gas nozzles 120. The fastening member 140 is inserted into and fixed to the groove. To this end, the groove is provided with a cylindrical shape in which one surface of which is disposed on the inner side of the gas ring 110 is opened and the other surface of which is connected to the gas flow path 112 connected to the gas supply source. Of course, the fastening member 140 may be provided integrally with the gas ring 110, in which the groove receives and mounts the protrusions 126 step by step. In addition, the fastening member 140 provides the gas nozzle 120 to be installed in the gas ring 110 in a one-touch manner.

That is, the fastening member 140 has a cylindrical housing. The housing is inserted into and fixed to the groove of the gas ring 110. The front surface 141 of which the housing is disposed inside the gas ring 110 is partially opened to allow insertion and detachment of the insertion portion 124 having the protrusion 126. The rear of the housing is connected to the gas nozzle 120 through the gas flow path 112. In addition, the housing has protrusions 126 accommodated therein, and has rotatable spaces 142 to 146. The spaces 142 to 146 are provided with a plurality of protrusions 141 to 145 in which side walls of the housing protrude at regular intervals. The fastening member 140 is inserted into the groove of the gas ring 110 to provide the gas nozzle 120 to be coupled to the gas ring 110 in different lengths.

Specifically, the fastening member 140 is inserted into and fixed in the groove, the housing having a front surface 141 into which the insertion portion 124 of the gas nozzle 120 in which the protrusion 126 is formed, and the protrusion 126 are accommodated. In the housing, a plurality of rotatable protrusions 126 are disposed between the plurality of rotatable spaces 142 through 146 and the spaces 142 through 146 to fix the protrusions 126 rotated in the space so as not to be separated from the outside. And protrusions 141 to 145. Therefore, the gas nozzle 120 is pressed in steps corresponding to each of the spaces 142 to 146 so that the protrusions 126 can be inserted into the stages 142 to 146 in multiple stages. When positioned in one of the spaces 142, 144 or 146, it is rotated and mounted to the fastening member 140. The fastening member 140 provides an elastic member 150 between the insertion portion 124 and the lower surface of the housing. The elastic member 150 is firmly fixed by pressing the insertion portion 124 of the gas nozzle 120 inserted into any one of the first to third spaces 142 to 146 into the gas ring 110. Let's do it. For example, the elastic member 150 is provided with a high heat resistant spring or the like. The elastic member 150 may process the sealing of the gas nozzle 120. Alternatively, the fastening member 140 may be provided with a separate sealing member (not shown) to prevent the gas nozzle from being damaged between the insertion portion 124 of the gas nozzle 120 and the lower surface of the housing.

In this embodiment, the fastening member 140 has three spaces. A housing front surface 141 and first and second protrusions 143 and 145 are disposed between each of the first to third spaces 142 to 146. That is, the first space 142 is provided between the housing front surface 141 and the first protrusion 143, as shown in FIG. 6A. The protrusion 126 is inserted into and accommodated in the first space 142 by pressing the gas nozzle 120 at the first length position of the fastening member 140. At this time, the protrusion 126 is provided to be rotatable by the rotation of the gas nozzle 120.

As shown in FIG. 6B, the second space 144 is provided between the first protrusion 143 and the second protrusion 145 so that the protrusion 126 is inserted and received in the second length of the fastening member 140. do. At this time, the second length is longer than the first length. Therefore, the gas nozzle 120 is located in the second space 144 and rotates to prevent the protrusion 126 from being separated by the first protrusion 143. And the third space 146 is provided between the second protrusion 145 and the housing bottom surface, as shown in Figure 6c. The third space 146 is located at the third length of the fastening member 140 longer than the second length. The third space 146 is provided such that the protrusion 126 is inserted and accommodated so that the protrusion 126 is rotatable by the rotation of the gas nozzle 120. In addition, the fastening member 140 provides a space 148 such that the elastic member 150 is installed between the third space 146 and the lower surface of the housing. Therefore, in this embodiment, the gas nozzle 120 is installed in the gas ring 110 is adjusted in three steps by the first to third spaces (142 to 146) of the fastening member 140.

As described above, the gas supply apparatuses 110 to 130 of the present invention are installed in a one-touch assembly manner to each of the plurality of gas nozzles 120 in the gas ring 110. That is, by pressing and positioning the gas nozzle 120 step by step corresponding to each of the spaces (142 to 146), by rotating in the space, the gas nozzle 120 is easy to the fastening member 140 of the gas ring 110 To be installed.

The substrate processing apparatus 100 including the gas supply apparatuses 110 to 130 may control the gas nozzle 120 in a multi-stage installation and easily tune a process map that is difficult to form in a high density plasma deposition apparatus. . Here, the process map means that the thickness of the film quality should be adjusted by appropriately adjusting the gas supply amount to a desired part in the deposition process, etc., so that the process map is requested for each process so as to freely form the film quality. Therefore, since the substrate processing apparatus 100 of the present invention can individually adjust the length of the gas nozzle 120 as desired by the user using the fastening member 140, process map tuning is easy. This is because when the gas nozzles 120 are mounted on the gas ring 110, each of the gas nozzles 120 may be variously adjusted between a position close to the substrate W and a position away from each other, thereby increasing the deposition efficiency for forming the film. Can be improved.

In the above, although the configuration and operation of the gas supply apparatus and the substrate processing apparatus having the same according to the present invention have been shown in accordance with the detailed description and drawings, this is merely described by way of example, and does not depart from the spirit of the present invention. Various changes and modifications are possible within the scope.

1 is a diagram showing the configuration of a general substrate processing apparatus;

FIG. 2 is a view showing a configuration of a gas ring equipped with a plurality of gas nozzles shown in FIG. 1; FIG.

3 is a cross-sectional view showing a part of the configuration of the gas ring shown in FIG.

4 is a diagram showing the configuration of a substrate processing apparatus according to the present invention;

5 is an exploded perspective view showing a coupling structure of the gas nozzle and the gas ring shown in FIG. 4; And

6A to 6C are diagrams illustrating a state in which gas nozzles are mounted in stages to the gas ring illustrated in FIG. 5.

Description of the Related Art [0002]

100: substrate processing apparatus 102, 104: chamber

106: substrate support member 110: gas ring

120: gas nozzle 124: insertion portion

126: projection 130: shower head

140: fastening member 141 ~ 145: protrusion

142 to 146: space 150: elastic member

Claims (17)

In the gas supply: A plurality of gas nozzles; A gas ring configured to provide a plurality of grooves in which the gas nozzles are mounted at predetermined intervals, and a gas supply source supplying at least one process gas and the groove to supply process gases to the gas nozzles; A fastening member inserted into the groove to provide each of the gas nozzles to be coupled to the gas ring at different lengths; The gas nozzle provides an insertion portion inserted into the groove, and at least two protrusions outside the insertion portion, The groove is provided with a cylindrical shape, one surface of which is disposed inside the gas ring is opened, and the other surface of which is connected to a gas flow path connected to the gas supply source. The fastening member is inserted into and fixed in the groove, the housing having a front surface into which the insertion portion in which the protrusion is formed is inserted; A plurality of spaces in which the protrusion is accommodated and the protrusion is rotatable inside the housing; And a plurality of protrusions disposed between the spaces to fix the protrusions rotated in the spaces so that the protrusions do not escape to the outside, and the protrusions can be inserted into the spaces in multiple stages. delete delete The method of claim 1, The gas nozzle is inserted into one of the spaces in the fastening member, the gas supply device, characterized in that fixed to the fastening member. The method of claim 1, The spaces; A first space provided between the front surface and the first protrusion, the protrusion being inserted into and accommodated in the first length of the fastening member, the rotatable protrusion being rotated by the rotation of the gas nozzle; A second space provided between the first protrusion and the second protrusion and inserted into and accommodated in the second length of the fastening member longer than the first length, wherein the protrusion is rotatable by rotation of the gas nozzle; ; A third space provided between the second protrusion and the lower surface of the housing, the protrusion being inserted into and received at a third length of the fastening member longer than the second length, such that the protrusion is rotated by the rotation of the gas nozzle; Gas supply apparatus comprising a. The method of claim 5, The fastening member is; Further comprising an elastic member between the insertion portion and the lower surface of the housing; The elastic member is a gas supply device, characterized in that for pressing the insertion portion inserted into each of the space into the gas ring. The method of claim 6, The elastic member is a gas supply device, characterized in that installed between the third space and the lower surface of the housing. The method of claim 1, The fastening member is; And a sealing member provided between the insertion portion and the lower surface of the housing to prevent the gas nozzle from being damaged. In the substrate processing apparatus: A chamber for processing; A substrate support member installed in the chamber and supporting the substrate; A gas supply device for supplying a process gas to the chamber; The gas supply device is: A plurality of gas nozzles; A gas ring configured to provide a plurality of grooves in which the gas nozzles are mounted at predetermined intervals, the gas supply source supplying at least one process gas and the grooves to supply process gases to the gas nozzles; A fastening member inserted into the groove to provide each of the gas nozzles to be coupled to the gas ring at different lengths; The gas nozzle provides an insertion portion inserted into the groove, and at least two protrusions outside the insertion portion, The groove is provided with a cylindrical shape, one surface of which is disposed inside the gas ring is opened, and the other surface of which is connected to a gas flow path connected to the gas supply source. The fastening member is inserted into and fixed in the groove, the housing having a front surface into which the insertion portion in which the protrusion is formed is inserted; A plurality of spaces in which the protrusion is accommodated and the protrusion is rotatable inside the housing; And a plurality of protrusions disposed between the spaces to fix the protrusions rotated in the spaces so that the protrusions are not separated from the outside, and the protrusions can be inserted into the spaces in multiple stages. delete delete The method of claim 9, And the gas nozzle is inserted into and rotated in any one of the spaces in the fastening member to be fixed to the fastening member. 13. The method of claim 12, The fastening member is; Further comprising an elastic member between the insertion portion and the lower surface of the housing; And the elastic member presses the insertion portion inserted into each of the spaces into the gas ring. The method of claim 9, The gas supply device is; And a shower head installed at an upper center of the chamber to supply a process gas. A chamber providing space to process the substrate; A plurality of fastening members installed to correspond to the plurality of grooves formed in the inner wall of the chamber; Coupled to each of the fastening members, the gas nozzles supplying gas into the chamber; Each gas nozzle, An insertion part inserted into the fastening member; It includes a protrusion projecting to the outside of the insertion portion, A plurality of spaces are formed in each of the fastening members so as to be spaced apart from each other along the longitudinal direction of the gas nozzle to be inserted so that the protrusions can be selectively inserted. And a length of the gas nozzle protruding into the chamber according to the space into which the protrusion is inserted. The method of claim 15, At least two projections are provided on the outside of the insertion portion. The method according to claim 15 or 16, The fastening member, And an elastic member disposed in the fastening member to press the insert into the chamber.

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