KR100982123B1 - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
- Publication number
- KR100982123B1 KR100982123B1 KR1020057014583A KR20057014583A KR100982123B1 KR 100982123 B1 KR100982123 B1 KR 100982123B1 KR 1020057014583 A KR1020057014583 A KR 1020057014583A KR 20057014583 A KR20057014583 A KR 20057014583A KR 100982123 B1 KR100982123 B1 KR 100982123B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- coupling agent
- general formula
- integer
- Prior art date
Links
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 73
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 72
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 13
- 239000011256 inorganic filler Substances 0.000 claims abstract description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 10
- 238000005538 encapsulation Methods 0.000 claims abstract description 7
- 239000005011 phenolic resin Substances 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 abstract description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 150000001463 antimony compounds Chemical class 0.000 abstract description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052794 bromium Inorganic materials 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 abstract description 5
- 150000002894 organic compounds Chemical class 0.000 abstract description 5
- 235000010290 biphenyl Nutrition 0.000 abstract description 4
- 239000004305 biphenyl Substances 0.000 abstract description 4
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 abstract 1
- 125000003396 thiol group Chemical group [H]S* 0.000 abstract 1
- 239000007822 coupling agent Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000005476 soldering Methods 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- -1 dicyclopentadiene modified phenol Chemical class 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 3
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- QGHXERRNIBBNFZ-UHFFFAOYSA-N B([O-])([O-])[O-].C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound B([O-])([O-])[O-].C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 QGHXERRNIBBNFZ-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- VUQOIZPFYIVUKD-UHFFFAOYSA-N CC(C)(CC1)CCC1O Chemical compound CC(C)(CC1)CCC1O VUQOIZPFYIVUKD-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000007718 adhesive strength test Methods 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 1
- YZMXTFHCEYRBGW-UHFFFAOYSA-N benzoic acid tetraphenylphosphanium borate Chemical compound B([O-])([O-])[O-].C(C1=CC=CC=C1)(=O)O.C(C1=CC=CC=C1)(=O)O.C(C1=CC=CC=C1)(=O)O.C(C1=CC=CC=C1)(=O)O.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 YZMXTFHCEYRBGW-UHFFFAOYSA-N 0.000 description 1
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
- C08G59/4042—Imines; Imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
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Abstract
본 발명의 목적은 브롬 함유 유기 화합물, 안티몬 화합물을 사용하지 않고, 유동성, 기판과의 밀착성, 난연성 및 납땜 균열 저항성이 뛰어난 에폭시 수지 조성물을 제공하는 것이다. 본 발명에 따르면, 비페닐 골격을 갖는 페놀 아랄킬형 에폭시 수지, 비페닐 골격을 갖는 페놀 아랄킬 수지, 경화 촉진제, 무기 충전재, 2차 아민을 갖는 특정의 실란 커플링제 및 메르캅토기를 갖는 특정의 실란 커플링제를 필수 성분으로 하는 것을 특징으로 하는 반도체 봉지용 에폭시 수지 조성물이 제공된다.An object of the present invention is to provide an epoxy resin composition having excellent fluidity, adhesion to a substrate, flame retardancy, and solder cracking resistance, without using a bromine-containing organic compound or an antimony compound. According to the present invention, a phenol aralkyl type epoxy resin having a biphenyl skeleton, a phenol aralkyl resin having a biphenyl skeleton, a curing accelerator, an inorganic filler, a specific silane coupling agent having a secondary amine, and a specific having a mercapto group There is provided an epoxy resin composition for semiconductor encapsulation comprising a silane coupling agent as an essential component.
Description
본 발명은 반도체 봉지용 에폭시 수지 조성물 및 이것을 이용한 반도체 장치에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
IC, LSI 등의 반도체 소자의 봉지 방법으로서, 에폭시 수지 조성물의 전사 성형 (transfer mold)이 저비용, 대량 생산에 적합하여 채용된지 오래되었고, 신뢰성의 점에서도 에폭시 수지나 경화제인 페놀 수지의 개량에 의해 특성의 향상이 도모되어 왔다. 그러나, 근래의 전자 기기의 소형화, 경량화, 고성능화의 시장 동향에 있어서, 반도체의 고집적화도 매년 진전되고, 또한 반도체 장치의 표면 실장화가 촉진되는 가운데 반도체 봉지용 에폭시 수지 조성물에 대한 요구는 더욱더 어려워지고 있다. 이 때문에, 종래로부터의 에폭시 수지 조성물에서는 해결할 수 없는 문제점도 나오고 있다.As a method for encapsulating semiconductor devices such as IC and LSI, transfer molds of epoxy resin compositions have been adopted for low cost and for mass production, and in terms of reliability, improvement of epoxy resins and phenol resins, which are curing agents, has been achieved. The improvement of the characteristic has been aimed at. However, in recent years, in the market trend of miniaturization, light weight, and high performance of electronic devices, high integration of semiconductors has progressed every year, and surface mounting of semiconductor devices has been promoted, and the demand for epoxy resin compositions for semiconductor encapsulation is becoming more difficult. . For this reason, the problem which cannot be solved with the conventional epoxy resin composition is also coming out.
통상, 에폭시 수지 조성물 중에는 난연성을 부여하기 위해 브롬 함유 유기 화합물 및 3산화 안티몬, 4산화 안티몬 등의 안티몬 화합물이 배합되고 있지만, 환경·위생의 점으로부터 바람직하지 않다. 따라서, 브롬 함유 유기 화합물 및 안티몬 화합물을 사용하지 않고도 난연성이 뛰어난 에폭시 수지 조성물로서, 구조 중에 다수의 방향환을 갖는 수지를 사용하는 수법이 있다 (예를 들면, 일본 특개평 11-140277 호 공보 제 2~11 페이지 참조). 그러나, 다수의 방향환을 갖기 때문에 점도가 상승하여 버린다는 결점이 있었다.Usually, in order to provide a flame retardance in an epoxy resin composition, although bromine containing organic compound and antimony compounds, such as antimony trioxide and antimony tetraoxide, are mix | blended, it is unpreferable from an environment and hygiene point. Therefore, there is a method of using a resin having a large number of aromatic rings in its structure as an epoxy resin composition excellent in flame retardancy without using a bromine-containing organic compound and an antimony compound (for example, JP-A-11-140277). See pages 2-11). However, since it has many aromatic rings, there existed a fault that a viscosity rises.
또한, 반도체 장치를 프린트 회로 기판에 대한 실장시, 납을 함유하는 납땜 (주석-납 합금)이 사용되어 왔지만, 마찬가지로 환경·위생의 점으로부터 납을 함유하는 납땜 (주석-납 합금)을 사용하지 않는 것이 바람직하다. 납을 함유하는 납땜 (주석-납 합금)의 융점은 183℃이고, 실장시의 납땜 처리의 온도는 220~240℃인 것에 대조적으로, 주석-은 합금으로 대표되는 납을 함유하지 않는 납땜으로는 융점이 높고, 납땜 처리시의 온도가 260℃ 정도가 된다. 그 때문에, 납땜 침지 혹은 납땜 리플로우 공정에서 반도체 장치에 걸리는 응력이 증대하여, 반도체 장치 내, 특히 반도체 소자, 리드 프레임, 이너 (inner) 리드 상의 금 도금이나 은 도금 등의 각종 도금된 각 접합 부분과 에폭시 수지 조성물의 경화물의 계면에서 박리가 생기거나 하여, 신뢰성이 현저하게 저하해 버린다.In addition, soldering (tin-lead alloys) containing lead has been used when mounting semiconductor devices on printed circuit boards, but similarly, soldering (tin-lead alloys) containing lead is not used from environmental and sanitary points. It is preferable not to. The melting point of lead-containing solder (tin-lead alloy) is 183 ° C, and the soldering temperature at the time of mounting is 220-240 ° C. In contrast, the solder containing no lead represented by tin-silver alloy Melting | fusing point is high and the temperature at the time of a soldering process will be about 260 degreeC. Therefore, the stress applied to the semiconductor device in the solder immersion or the solder reflow process increases, and various plated joint portions such as gold plating or silver plating on the semiconductor device, in particular, the semiconductor element, the lead frame, and the inner lead, etc. Peeling arises at the interface of the hardened | cured material of an epoxy resin composition, and reliability falls remarkably.
납땜 처리에 의한 신뢰성 저하를 개선하기 위해, 에폭시 수지 조성물 중의 무기질 충전재의 충전량을 증가시킴으로써 저흡습화, 고강도화, 저열팽창화를 달성하여 납땜 균열 저항성을 향상시키고, 저융점 점도의 수지를 사용하여 성형시에 저점도로 고유동성을 유지시키는 수법이 있다 (예를 들면, 일본 특개소 64-65116 호 공보 제 2~7 페이지 참조). 이 수법을 이용함으로써 납땜 균열 저항성 (soldering crack resistance)이 상당히 개량되지만, 무기 충전재의 충전 비율의 증가와 함께 유동성이 희생되어 패키지 내에 공극이 생기기 쉬워지는 결점이 있었다. 따라서, 아미노실란 등의 각종 커플링제를 첨가하여 유동성과 납땜 균열 저항성의 양립을 도모하는 수법도 제안되고 있지만 (예를 들면, 일본 특개평 2-218735 호 공보 제 1~9 페이지 참조), 금 도금이나 은 도금 등 각종 도금된 각 접합 부분과 에폭시 수지 조성물의 경화물의 계면에서의 박리는 억제되지 않고, 충분히 양호한 납땜 균열 저항성을 갖춘 반도체 봉지용 에폭시 수지 조성물이 얻어지는 데에는 이르지 못했다.In order to improve the reliability deterioration by the soldering treatment, by increasing the amount of the inorganic filler in the epoxy resin composition to achieve low hygroscopicity, high strength, low thermal expansion, to improve the solder crack resistance, molding using a resin of low melting point viscosity There is a technique for maintaining high fluidity at low viscosity in the city (see, for example, Japanese Patent Application Laid-Open No. 64-65116, pages 2-7). Although this technique significantly improves soldering crack resistance, there has been a drawback that voids are easily generated in the package at the expense of fluidity with an increase in the filling ratio of the inorganic filler. Therefore, a method for achieving both fluidity and solder crack resistance by adding various coupling agents such as aminosilane has been proposed (for example, see Japanese Patent Application Laid-Open No. 2-218735, pages 1-9). Peeling at the interface of various plated bonding parts, such as silver plating and hardened | cured material of an epoxy resin composition, was not suppressed, and the epoxy resin composition for semiconductor sealing with sufficiently favorable soldering cracking resistance was not obtained.
[발명의 개시][Initiation of invention]
본 발명의 목적은 유동성, 납땜 균열 저항성이 뛰어난 반도체 봉지용 에폭시 수지 조성물 및 이것을 이용한 반도체 장치를 제공하는 것이다.An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation excellent in fluidity and solder crack resistance, and a semiconductor device using the same.
본 발명은The present invention
[1] (A) 일반식 (1) 로 표시되는 에폭시 수지, (B) 일반식 (2) 로 표시되는 페놀 수지, (C) 경화 촉진제, (D) 무기 충전재, (E) 일반식 (3) 으로 표시되는 실란 커플링제, 및 (F) 일반식 (4) 로 표시되는 실란 커플링제를 필수 성분으로 포함하는 반도체 봉지용 에폭시 수지 조성물:[1] (A) Epoxy resin represented by formula (1), (B) Phenolic resin represented by formula (2), (C) Curing accelerator, (D) Inorganic filler, (E) Formula (3) Epoxy resin composition for semiconductor encapsulation containing a silane coupling agent represented by) and (F) a silane coupling agent represented by General formula (4) as an essential component:
(R1 및 R2 는 각각 수소 또는 탄소수 1~4 의 알킬기로, 서로 동일해도 상이해도 된다. a 는 0~3 의 정수, b 는 0~4 의 정수. n 은 평균치로, 1~5 의 정수),(R1 and R2 may each be the same or different from each other as hydrogen or an alkyl group having 1 to 4 carbon atoms. A is an integer of 0-3, b is an integer of 0-4. N is an average value and an integer of 1-5.) ,
(R1 및 R2 는 각각 수소 또는 탄소수 1~4 의 알킬기로, 서로 동일해도 상이해도 된다. a 는 0~3 의 정수, b 는 0~4 의 정수. n 은 평균치로, 1~5 의 정수),(R1 and R2 may each be the same or different from each other as hydrogen or an alkyl group having 1 to 4 carbon atoms. A is an integer of 0-3, b is an integer of 0-4. N is an average value and an integer of 1-5.) ,
(R1 은 탄소수 1~12 의 유기기, R2, R3, R4 는 탄소수 1~12 의 탄화수소기, n 은 1~3 의 정수)(R 1 is an organic group of 1 to 12 carbon atoms, R 2 , R 3 , R 4 is a hydrocarbon group of 1 to 12 carbon atoms, n is an integer of 1 to 3)
(R5 는 탄소수 1~12 의 유기기, R6 및 R7 은 각각 탄소수 1~12 의 탄화수소기, n 은 1~3 의 정수), 및(R 5 is an organic group having 1 to 12 carbon atoms, R 6 and R 7 are each a hydrocarbon group having 1 to 12 carbon atoms, n is an integer of 1 to 3), and
[2] 제 [1] 에 기재된 반도체 봉지용 에폭시 수지 조성물을 이용하여 반도체 소자를 봉지하여 이루어지는 것을 특징으로 하는 반도체 장치이다.[2] A semiconductor device comprising the semiconductor element sealed using the epoxy resin composition for semiconductor encapsulation according to [1].
[발명의 실시 형태][Embodiment of the Invention]
본 발명에 이용되는 일반식 (1) 로 표시되는 에폭시 수지는 에폭시기 사이에 소수성이고 강직한 비페닐 골격을 가지고 있고, 이것을 이용한 에폭시 수지 조성물의 경화물은 흡습율이 낮고, 유리 전이온도 (이하, Tg 라고 한다)를 넘는 고온 영역에서의 탄성률이 낮으며, 반도체 소자, 유기 기판 및 금속 기판과의 밀착성이 뛰 어나다. 또, 가교 밀도가 낮은데 비해 내열성이 높다는 특징을 가지고 있다.The epoxy resin represented by General formula (1) used for this invention has a hydrophobic and rigid biphenyl skeleton between epoxy groups, and the hardened | cured material of the epoxy resin composition using this has low moisture absorption, and glass transition temperature (hereinafter, It has a low elastic modulus in the high temperature region over Tg), and has excellent adhesion to semiconductor elements, organic substrates, and metal substrates. Moreover, it has the characteristics that heat resistance is high compared with low crosslinking density.
일반식 (1) 중의 n 은 평균치로, 1~5 의 정수, 바람직하게는 1~3 이다. n 이 하한치보다 작으면 에폭시 수지 조성물의 경화성이 저하할 가능성이 있다. n 이 상한치보다 크면 점도가 높아져 에폭시 수지 조성물의 유동성이 저하할 가능성이 있다. 일반식 (1) 로 표시되는 에폭시 수지는 1 종류를 단독으로 이용해도 2 종류 이상을 병용해도 된다.N in general formula (1) is an average value, the integer of 1-5, Preferably it is 1-3. When n is smaller than a lower limit, the curability of an epoxy resin composition may fall. When n is larger than an upper limit, a viscosity may become high and the fluidity | liquidity of an epoxy resin composition may fall. The epoxy resin represented by General formula (1) may be used individually by 1 type, or may use two or more types together.
일반식 (1) 로 표시되는 에폭시 수지 중에서는 식 (5) 로 표시되는 에폭시 수지가 특히 바람직하다.Among the epoxy resins represented by the general formula (1), the epoxy resins represented by the formula (5) is particularly preferable.
일반식 (1) 로 표시되는 에폭시 수지의 본래 특성을 해치지 않는 범위에서 다른 에폭시 수지를 병용하여도 된다. 다른 에폭시 수지를 병용하는 경우, 분자 중에 일반적으로 에폭시기를 갖는 모노머, 올리고머, 폴리머로서, 가능한 한 저점도의 것을 사용하는 것이 바람직하다. 예를 들면, 페놀 노볼락형 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 비페닐형 에폭시 수지, 비스페놀형 에폭시 수지, 스틸벤 형 에폭시 수지, 트리페놀메탄형 에폭시 수지, 페놀 아랄킬형 에폭시 수지 (페닐렌 골격을 갖는다), 나프톨형 에폭시 수지, 나프탈렌형 에폭시 수지, 알킬 변성 트리페놀메탄형 에폭시 수지, 트리아진 링 함유 에폭시 수지, 디시클로펜타디엔 변성 페놀형 에폭시 수지 등을 들 수 있고, 이들은 1 종류를 단독으로 이용하거나 2 종류 이상을 병용해도 된다.You may use together another epoxy resin in the range which does not impair the original characteristic of the epoxy resin represented by General formula (1). When using another epoxy resin together, it is preferable to use as low a viscosity as possible as a monomer, oligomer, and polymer which generally have an epoxy group in a molecule | numerator. For example, phenol novolak type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, triphenol methane type epoxy resin, phenol aralkyl type epoxy resin (phenylene And a naphthol type epoxy resin, a naphthalene type epoxy resin, an alkyl modified triphenol methane type epoxy resin, a triazine ring-containing epoxy resin, a dicyclopentadiene modified phenol type epoxy resin, and the like. You may use individually or may use two or more types together.
일반식 (1) 로 표시되는 에폭시 수지의 사용량은 전체 에폭시 수지 중에 30 중량% 이상 포함하는 것이 바람직하고, 특히 50 중량% 이상이 바람직하다. 하한치보다 작으면 난연성이 불충분해질 가능성이 있다.It is preferable to contain 30 weight% or more in all epoxy resins, and, as for the usage-amount of the epoxy resin represented by General formula (1), 50 weight% or more is especially preferable. If it is smaller than the lower limit, the flame retardancy may be insufficient.
본 발명에서 이용되는 일반식 (2) 로 표시되는 페놀 수지는 페놀성 수산기 사이에 소수성이고 강직한 비페닐렌 골격을 갖고 있고, 이것을 이용한 에폭시 수지 조성물의 경화물은 흡습율이 낮고, Tg 를 넘은 고온 영역에서의 탄성률이 낮으며, 반도체 소자, 유기 기판 및 금속 기판과의 밀착성이 뛰어나다. 또, 가교 밀도가 낮은데 비해 내열성이 높다는 특징을 가지고 있다.The phenol resin represented by General formula (2) used by this invention has hydrophobic and rigid biphenylene frame | skeleton between phenolic hydroxyl groups, The hardened | cured material of the epoxy resin composition using this has low moisture absorption, and exceeded Tg. It has a low elastic modulus in the high temperature region and is excellent in adhesion to the semiconductor element, the organic substrate and the metal substrate. Moreover, it has the characteristics that heat resistance is high compared with low crosslinking density.
일반식 (2) 중의 n 은 평균치로, 1~5 의 정수, 바람직하게는 1~3 이다. n 이 하한치보다 작으면 에폭시 수지 조성물의 경화성이 저하할 가능성이 있다. n 이 상한치보다 크면 점도가 높아져 에폭시 수지 조성물의 유동성이 저하할 가능성이 있다. 일반식 (2) 로 표시되는 페놀 수지는 1 종류를 단독으로 이용하거나 2 종류 이상을 병용해도 된다.N in general formula (2) is an average value, the integer of 1-5, Preferably it is 1-3. When n is smaller than a lower limit, the curability of an epoxy resin composition may fall. When n is larger than an upper limit, a viscosity may become high and the fluidity | liquidity of an epoxy resin composition may fall. The phenol resin represented by General formula (2) may be used individually by 1 type, or may use two or more types together.
일반식 (2) 로 표시되는 페놀 수지 중에서는 식 (6) 으로 표시되는 페놀 수지가 특히 바람직하다.In the phenol resin represented by General formula (2), the phenol resin represented by Formula (6) is especially preferable.
본 발명에서 이용되는 일반식 (2) 로 표시되는 페놀 수지의 특성을 해지지 않는 범위에서 다른 페놀 수지를 병용하여도 된다. 다른 에폭시 수지를 병용하는 경우는 일반적으로 분자 중에 페놀성 수산기를 갖는 모노머, 올리고머, 폴리머로서, 가능한 한 저점도의 것을 사용하는 것이 바람직하다. 예를 들면, 페놀 노볼락 수지, 크레졸 노볼락 수지, 페놀 아랄킬형 수지 (페닐렌 골격을 갖는다), 나프톨 아랄킬 수지, 트리페놀메탄 수지, 테르펜 변성 페놀 수지, 디시클로펜타디엔 변성 페놀 수지 등을 들 수 있고, 이들은 1 종류를 단독으로 이용하거나 2 종류 이상을 병용해도 된다.You may use together another phenol resin in the range which does not lose the characteristic of the phenol resin represented by General formula (2) used by this invention. When using another epoxy resin together, it is generally preferable to use as low a viscosity as possible the monomer, oligomer, and polymer which have a phenolic hydroxyl group in a molecule | numerator. For example, phenol novolak resin, cresol novolak resin, phenol aralkyl type resin (having phenylene skeleton), naphthol aralkyl resin, triphenol methane resin, terpene modified phenol resin, dicyclopentadiene modified phenol resin and the like These may be used individually by 1 type, or may use two or more types together.
일반식 (2) 로 표시되는 페놀 수지의 사용량은 전체 페놀 수지 중에 30 중량% 이상 포함하는 것이 바람직하고, 특히 50 중량% 이상이 바람직하다. 하한치보다 작으면 난연성이 불충분해질 가능성이 있다.It is preferable to contain 30 weight% or more in all the phenol resins, and, as for the usage-amount of the phenol resin represented by General formula (2), 50 weight% or more is especially preferable. If it is smaller than the lower limit, the flame retardancy may be insufficient.
전체 에폭시 수지의 에폭시기와 전체 페놀 수지의 페놀성 수산기의 당량비로는 바람직하게는 0.5~2 이고, 특히 0.7~1.5 가 보다 바람직하다. 상기 범위를 벗어 나면, 내습성, 경화성 등이 저하할 가능성이 있다.As an equivalence ratio of the epoxy group of all epoxy resins, and the phenolic hydroxyl group of all phenol resins, Preferably it is 0.5-2, Especially 0.7-1.5 are more preferable. If it is out of the said range, moisture resistance, sclerosis | hardenability, etc. may fall.
본 발명에서 이용하는 무기 충전재의 종류에 관해서는 특별히 한정하지 않지만, 예를 들면, 용융 파쇄 실리카, 용융 구상 실리카, 결정 실리카, 2차 응집 실리카, 알루미나, 티탄 화이트, 수산화 알루미늄, 수산화 마그네슘, 붕산 아연, 몰리브덴산 아연 등을 들 수 있고, 특히 용융 구상 실리카가 바람직하다. 용융 구상 실리카의 형상으로는 유동성 개선을 위해서 한정없이 완전한 구상이며, 또한 입도 분포가 넓은 것이 바람직하다.The kind of inorganic filler used in the present invention is not particularly limited, but, for example, fused crushed silica, fused spherical silica, crystalline silica, secondary agglomerated silica, alumina, titanium white, aluminum hydroxide, magnesium hydroxide, zinc borate, Zinc molybdate etc. are mentioned, A fused spherical silica is especially preferable. The shape of the fused spherical silica is preferably spherical without limitation and broad in particle size distribution for improving fluidity.
무기 충전재 및 필요에 따라 첨가하는 금속 수산화물, 무기 이온 교환체 등을 포함한 전체 무기물의 함유량으로는 특별히 규정되지 않지만, 전체 에폭시 수지 조성물 중에 84 중량% 이상, 94 중량% 이하가 바람직하다. 상기 함유량이 하한치보다 작으면, 에폭시 수지 조성물의 경화물의 저흡습성이 얻어지지 않아 납땜 균열 저항성이 불충분해질 가능성이 있다. 또, 상한치보다 크면, 에폭시 수지 조성물의 유동성이 저하하여 성형시에 충전 불량 (short molding) 등이 생기거나 고점도화에 의해 반도체 장치 내의 금선 변형 등의 문제점이 생길 가능성이 있다.Although it does not specifically limit as content of an inorganic filler and the total inorganic substance containing a metal hydroxide, an inorganic ion exchanger, etc. which are added as needed, 84 weight% or more and 94 weight% or less are preferable in all the epoxy resin compositions. When the said content is smaller than a lower limit, the low hygroscopicity of the hardened | cured material of an epoxy resin composition may not be obtained, and solder cracking resistance may become inadequate. Moreover, when larger than an upper limit, the fluidity | liquidity of an epoxy resin composition may fall and short molding may arise at the time of shaping | molding, or high viscosity may cause problems, such as a deformation | transformation of a metal wire in a semiconductor device.
본 발명은 브롬 함유 유기 화합물 및 안티몬 화합물을 사용하지 않고 에폭시 수지 조성물에 대해 난연성을 달성하는 것이다. 본 발명에서의 전체 에폭시 수지 조성물 중의 브롬 원자 및 안티몬 원자는 각각 0.05 중량% 이하로 되어 있다. 이것은 경제상의 이유로부터 원료나 에폭시 수지 조성물 제조 단계에서 혼입하는 미량의 성분 이외에는, 브롬 원자 및 안티몬 원자를 첨가하지 않는 것을 의미하고 있다.The present invention achieves flame retardance with respect to an epoxy resin composition without using a bromine-containing organic compound and an antimony compound. The bromine atom and antimony atom in all the epoxy resin compositions in this invention are 0.05 weight% or less, respectively. This means that, for economic reasons, no bromine atom and antimony atom are added except for the trace amount mixed in the raw material or the epoxy resin composition production step.
본 발명에 이용하는 무기 충전재는 미리 충분히 혼합하여 두는 것이 바람직하다. 또, 필요에 따라 무기 충전재를 커플링제나 에폭시 수지 혹은 페놀 수지로 미리 피복 처리하여 이용해도 되고, 피복 처리의 방법으로는 용매를 이용하여 혼합한 후에 용매를 제거하는 방법이나, 직접 무기 충전재에 첨가하여 혼합기를 이용해 혼합하는 방법 등을 들 수 있다.It is preferable to mix sufficiently the inorganic filler used for this invention beforehand. In addition, if necessary, the inorganic filler may be coated with a coupling agent, an epoxy resin, or a phenol resin in advance to be used, and as a method of coating, a solvent may be removed after mixing with a solvent, or directly added to the inorganic filler. And mixing using a mixer.
본 발명에 이용되는 경화 촉진제로는 에폭시기와 페놀성 수산기의 반응을 촉진하는 것이라면 특별히 한정되지 않지만, 예를 들면 1,8-디아자비시클로(5,4,0)운데센-7 등의 디아자비시클로알켄 및 그 유도체; 트리부틸아민, 벤질디메틸아민 등의 아민계 화합물; 2-메틸이미다졸 등의 이미다졸 화합물; 트리페닐포스핀, 메틸디페닐포스핀 등의 유기 포스핀류; 테트라페닐포스포늄·테트라페닐 보레이트, 테트라페닐포스포늄·테트라벤조산 보레이트, 테트라페닐포스포늄·테트라나프토산 보레이트, 테트라페닐포스포늄·테트라나프토일옥시 보레이트, 테트라페닐포스포늄·테트라나프틸옥시 보레이트 등의 테트라 치환 포스포늄·테트라 치환 보레이트 등을 들 수 있고, 이들은 1 종류를 단독으로 이용하거나 2 종류 이상을 병용해도 된다.The curing accelerator to be used in the present invention is not particularly limited as long as it promotes the reaction between the epoxy group and the phenolic hydroxyl group, but for example, diazabi such as 1,8-diazabicyclo (5,4,0) undecene-7 Cycloalkenes and derivatives thereof; Amine compounds such as tributylamine and benzyldimethylamine; Imidazole compounds such as 2-methylimidazole; Organic phosphines such as triphenylphosphine and methyldiphenylphosphine; Tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium tetrabenzoic acid borate, tetraphenylphosphonium tetranaphthoic acid borate, tetraphenylphosphonium tetranaphthoyloxy borate, tetraphenylphosphonium tetranaphthyloxy borate Tetra substituted phosphonium tetra substituted borate etc. are mentioned, These may be used individually by 1 type, or may use two or more types together.
본 발명에서 일반식 (3) 으로 표시되는 실란 커플링제는 필수이다. 일반식 (3) 으로 표시되는 실란 커플링제는 1 종류를 단독으로 사용해도 2 종류 이상을 병용해도 된다. 또, 배합량은 특별히 한정되지 않지만, 전체 에폭시 수지 조성물 중 0.01~3 중량% 가 바람직하고, 보다 바람직하게는 0.05~1 중량% 이다. 하한치보다 작으면 충분한 유동성이 얻어지지 않을 가능성이 있고, 상한치보다 크면 경화성이 저하할 가능성이 있다.In this invention, the silane coupling agent represented by General formula (3) is essential. The silane coupling agent represented by General formula (3) may be used individually by 1 type, or may use 2 or more types together. Moreover, although a compounding quantity is not specifically limited, 0.01-3 weight% is preferable in all the epoxy resin compositions, More preferably, it is 0.05-1 weight%. If it is smaller than the lower limit, sufficient fluidity may not be obtained, and if it is larger than the upper limit, curability may decrease.
본 발명에서 일반식 (4) 로 표시되는 실란 커플링제는 필수이다. 일반식 (4) 로 표시되는 실란 커플링제는 1 종류를 단독으로 사용해도 2 종류 이상을 병용해도 된다. 또, 배합량은 특별히 한정되지 않지만, 전체 에폭시 수지 조성물 중 0.01~3 중량% 가 바람직하고, 보다 바람직하게는 0.05~1 중량% 이다. 하한치보다 작으면 충분한 밀착성이 얻어지지 않을 가능성이 있고, 상한치보다 크면 경화성이 저하할 가능성이 있다.In this invention, the silane coupling agent represented by General formula (4) is essential. The silane coupling agent represented by General formula (4) may be used individually by 1 type, or may use 2 or more types together. Moreover, although a compounding quantity is not specifically limited, 0.01-3 weight% is preferable in all the epoxy resin compositions, More preferably, it is 0.05-1 weight%. If it is smaller than the lower limit, sufficient adhesiveness may not be obtained, and if it is larger than the upper limit, curability may decrease.
본 발명에서 일반식 (3) 으로 표시되는 실란 커플링제와 일반식 (4) 로 표시되는 실란 커플링제는 병용하는 것이 필수이며, 어느 쪽이라도 하나만 배합하면 유동성 및 납땜 균열 저항성이 충분하지 않다.In this invention, it is essential to use together the silane coupling agent represented by General formula (3), and the silane coupling agent represented by General formula (4), and when only one is mix | blended, fluidity | liquidity and solder crack resistance are not enough.
본 발명의 에폭시 수지 조성물은 필요에 따라 일반식 (3) 으로 표시되는 것 이외의 아미노실란, 일반식 (4) 로 표시되는 것 이외의 메르캅토실란, 에폭시실란, 알킬실란, 우레이도실란 및 비닐실란 등의 실란 커플링제나, 티타네이트 커플링제, 알루미늄 커플링제, 알루미늄/지르코늄 커플링제 등의 커플링제; 카본블랙 등의 착색제; 천연 왁스, 합성 왁스 등의 이형제; 및 고무 등의 저응력 첨가제를 적절히 배합해도 지장없다.The epoxy resin composition of this invention is a mercaptosilane, epoxysilane, alkylsilane, ureidosilane, and vinyl other than aminosilane other than what is represented by General formula (3) as needed, and general formula (4) as needed. Coupling agents such as silane coupling agents such as silanes, titanate coupling agents, aluminum coupling agents, and aluminum / zirconium coupling agents; Coloring agents such as carbon black; Mold release agents such as natural waxes and synthetic waxes; And low stress additives such as rubber may be appropriately blended.
또, 본 발명의 에폭시 수지 조성물은 믹서 등을 이용해 원료를 충분히 균일 하게 혼합한 후, 핫 롤 (hot roll) 또는 혼련기 (kneader) 등으로 더욱 융융 혼련하고 냉각 후 분쇄하여 얻을 수 있다.In addition, the epoxy resin composition of the present invention can be obtained by mixing the raw materials sufficiently uniformly using a mixer or the like, further melting and kneading with a hot roll or a kneader, and then pulverizing after cooling.
본 발명의 에폭시 수지 조성물을 이용하여, 반도체 소자 등의 각종 전자 부품을 봉지하여 반도체 장치를 제조하려면, 전사 성형 (transfer mold), 압출 성형 (compression mold), 사출 성형 (injection mold) 등의 종래부터의 성형 방법으로 경화 성형하면 된다.In order to manufacture a semiconductor device by sealing various electronic components, such as a semiconductor element using the epoxy resin composition of this invention, conventionally, such as a transfer mold, an extrusion mold, an injection mold, etc. What is necessary is just to harden molding by the shaping | molding method of the.
이하에 본 발명의 실시예를 나타내지만, 본 발명은 이들로 한정되는 것은 아니다. 배합 비율은 중량부로 한다.Although the Example of this invention is shown below, this invention is not limited to these. The blending ratio is in weight parts.
또한, 실시예 및 비교예에서 이용한 커플링제 및 화합물에 관하여 이하에 나타낸다.In addition, it shows below about the coupling agent and compound which were used by the Example and the comparative example.
커플링제 1 : 식 (7) 로 표시되는 커플링제 (Shin-Etsu Chemical Co.,Ltd.제, KBM-573)Coupling Agent 1: Coupling agent represented by formula (7) (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)
커플링제 2 : 식 (8) 로 표시되는 커플링제 (Shin-Etsu Chemical Co.,Ltd.제, X12-806)Coupling Agent 2: Coupling Agent Represented by Formula (8) (manufactured by Shin-Etsu Chemical Co., Ltd., X12-806)
커플링제 3 : 식 (9) 로 표시되는 커플링제 (Shin-Etsu Chemical Co.,Ltd. 제, KBM-803)Coupling Agent 3: Coupling Agent Represented by Formula (9) (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-803)
커플링제 4 : 식 (10) 으로 표시되는 커플링제 (Shin-Etsu Chemical Co.,Ltd.제, KBM-403)Coupling Agent 4: Coupling agent represented by formula (10) (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403)
실시예 1Example 1
에폭시 수지 1 : 식 (5) 로 표시되는 에폭시 수지 (Nippon Kayaku Co.,Ltd.제, NC3000P, 연화점 58℃, 에폭시 당량 273, 이하 E-1 이라고 한다)Epoxy Resin 1: Epoxy resin represented by formula (5) (manufactured by Nippon Kayaku Co., Ltd., NC3000P, softening point 58 ° C, epoxy equivalent 273, hereinafter referred to as E-1)
66 중량부66 parts by weight
페놀 수지 1 : 식 (6) 으로 표시되는 페놀 수지 (Meiwa Kasei Co.,Ltd.제, MEH-7851SS, 연화점 107℃, 수산기 당량 204, 이하 H-1 이라고 한다)Phenolic Resin 1: Phenolic resin represented by Formula (6) (manufactured by Meiwa Kasei Co., Ltd., MEH-7851SS, softening point 107 ° C, hydroxyl equivalent 204, hereinafter referred to as H-1)
48 중량부48 parts by weight
1,8-디아자비시클로(5,4,0)운데센- 7 (이하, DBU 라고 한다) 5 중량부5 parts by weight of 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU)
용융 구상 실리카 (평균 입경 21㎛) 870 중량부870 parts by weight of fused spherical silica (average particle size 21㎛)
커플링제 1 2 중량부Coupling Agent 1 2 parts by weight
커플링제 3 1 중량부Coupling agent 3 1 part by weight
카본블랙 3 중량부Carbon Black 3 parts by weight
카르나우바 (carnauba) 왁스 5 중량부5 parts by weight of carnauba wax
를 믹서에서 혼합하고, 핫 롤을 이용하여 95℃에서 8 분간 혼련하고 냉각 후 분쇄하여 에폭시 수지 조성물을 얻었다. 얻어진 에폭시 수지 조성물을 이하의 방법으로 평가했다. 결과를 표 1 에 나타낸다.Was mixed in a mixer, kneaded at 95 ° C. for 8 minutes using a hot roll, cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following method. The results are shown in Table 1.
평가 방법Assessment Methods
스파이럴 플로우 (spiral flow) : EMMI-1-66 에 준한 스파이럴 플로우 측정용 금형을 이용하여 금형 온도 175℃, 압력 6.9 MPa, 경화 시간 120초로 측정했다. 단위는 ㎝.Spiral flow: Using the die for spiral flow measurement according to EMMI-1-66, it measured at the mold temperature of 175 degreeC, the pressure of 6.9 MPa, and hardening time 120 second. The unit is cm.
밀착성 : 전사 성형기를 이용하여 금형 온도 175℃, 주입 압력 9.8 MPa, 경화 시간 120초의 조건으로 리드 프레임 상에 2㎜ × 2㎜ × 2㎜ 의 밀착 강도 시험 편을 성형했다. 리드 프레임에는 구리 프레임에 은 도금한 것 (프레임 1)과 NiPd 합금 프레임에 금 도금한 것 (프레임 2)의 2 종류를 이용했다. 그 후, 자동 전단 강도 측정 장치 (DAGE Co.,Ltd.제, PC2400)을 이용하여 에폭시 수지 조성물의 경화물과 프레임의 전단 강도를 측정했다. 단위는 N/㎟.Adhesiveness: The adhesive strength test piece of 2 mm x 2 mm x 2 mm was shape | molded on the lead frame on the conditions of metal mold temperature of 175 degreeC, injection pressure 9.8 Mpa, and hardening time 120 second using the transfer molding machine. As the lead frame, two kinds of silver-plated copper frames (frame 1) and gold-plated NiPd alloy frames (frame 2) were used. Then, the shear strength of the hardened | cured material of an epoxy resin composition and a frame was measured using the automatic shear strength measuring apparatus (made by DAGE Co., Ltd., PC2400). The unit is N / mm 2.
납땜 균열 저항성 : 저압 전사 성형기를 이용하여 성형 온도 175℃, 압력 8.3 MPa, 경화 시간 120초로, 80 pQFP (NiPd 합금 프레임에 금 도금한 프레임, 칩 사이즈 6.0㎜ × 6.0㎜)을 성형해, 애프터 베이크 (after-bake)로서 175℃, 8시간 가열 처리한 후, 85℃, 상대습도 85% 로 120시간의 가습 처리를 실시한 후, 260℃의 IR 리플로우 처리를 했다. 패키지 내부의 박리와 크랙을 초음파 탐상기 (supersonic flaw detector)로 확인했다. 10개의 패키지 중의 불량 패키지 수를 나타낸다.Soldering crack resistance: After baking, 80 pQFP (frame gold-plated on NiPd alloy frame, chip size 6.0 mm x 6.0 mm) was formed using low pressure transfer molding machine at molding temperature of 175 ° C, pressure of 8.3 MPa and curing time of 120 seconds. After heat-processing 175 degreeC and 8 hours as (after-bake), after humidifying for 120 hours at 85 degreeC and 85% of a relative humidity, IR reflow process of 260 degreeC was performed. Peeling and cracking inside the package were confirmed by a supersonic flaw detector. The number of defective packages in ten packages is shown.
난연성 : 전사 성형기를 이용하여 금형 온도 175℃, 주입 압력 9.8 MPa, 경화 시간 120초로, 길이 127㎜, 폭 12.7㎜, 두께 1.6㎜ 의 성형품을 성형해, 포스트 베이크 (post-bake)로서 175℃에서 8시간 가열 처리한 후, 얻어진 성형품을 23℃, 상대습도 50% 의 환경하에서 48시간 가습 처리해, UL-94 에 준해 난연성 시험을 실시했다.Flame retardant: A molded article having a length of 127 mm, a width of 12.7 mm, and a thickness of 1.6 mm was formed at a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 120 seconds using a transfer molding machine, and was formed at 175 ° C. as a post-bake. After heat-processing for 8 hours, the obtained molded article was humidified for 48 hours in 23 degreeC and the environment of 50% of a relative humidity, and the flame-retardance test was done according to UL-94.
실시예 2~5, 비교예 1~5Examples 2-5, Comparative Examples 1-5
표 1 의 배합에 따라, 실시예 1 과 동일한 방식으로 에폭시 수지 조성물을 얻고, 실시예 1 과 동일한 방식으로 평가했다. 결과를 표 1 에 나타낸다.According to the formulation of Table 1, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The results are shown in Table 1.
실시예 1 이외에서 이용한 원료를 이하에 나타낸다.The raw material used other than Example 1 is shown below.
에폭시 수지 2 : 식 (11) 을 주성분으로 하는 에폭시 수지 (Japan Epoxy Resin Co.,Ltd.제, YX-4000, 에폭시 당량 190 g/eq , 융점 105℃, 이하 E-2 이라고 한다)Epoxy Resin 2: Epoxy resin containing formula (11) as a main component (manufactured by Japan Epoxy Resin Co., Ltd., YX-4000, epoxy equivalent 190 g / eq, melting point 105 ° C, hereinafter referred to as E-2)
페놀 수지 2 : 식 (12) 로 표시되는 페놀 수지 (Mitsui Chemical Co.,Ltd.제, XLC-LL, 수산기 당량 165 g/eq, 연화점 79℃, 이하 H-2 라고 한다)Phenolic Resin 2: Phenolic resin represented by Formula (12) (manufactured by Mitsui Chemical Co., Ltd., XLC-LL, hydroxyl equivalent 165 g / eq, softening point 79 DEG C, hereinafter referred to as H-2)
실시예 1 과 비교예 1, 2 를 비교하면, 일반식 (3)의 커플링제 (커플링제 1, 2) 및 일반식 (4)의 커플링제 (커플링제 3)를 각각 단독으로 이용하는 것이 아니라 병용함으로써, 유동성, 밀착성 모두 커지고 있다. 그 효과는, 비교예 3 과 같이 커플링제 3, 4 를 병용했을 때에는 나타나지 않고, 또 비교예 4, 5와 같이 다른 수지를 사용했을 경우에도 나타나지 않는 본 발명 특유의 것이다.When Example 1 is compared with Comparative Examples 1 and 2, the coupling agent (coupling agent 1, 2) of the general formula (3) and the coupling agent (coupling agent 3) of the general formula (4) are not used alone, but in combination. Thereby, both fluidity and adhesiveness become large. The effect is peculiar to the present invention, which does not appear when the coupling agents 3 and 4 are used in combination as in Comparative Example 3, and does not appear even when other resins are used as in Comparative Examples 4 and 5.
본 발명에 따르면, 브롬 함유 유기 화합물, 안티몬 화합물을 사용하지 않고도 양호한 난연성이 얻어지고, 또한 양호한 유동성, 기판과의 양호한 밀착성을 갖는 에폭시 수지 조성물이 얻어지며, 이것을 이용한 반도체 장치는 납땜 균열 저항성이 뛰어나다.According to the present invention, an epoxy resin composition having good flame retardancy is obtained without using a bromine-containing organic compound and an antimony compound, and also has good fluidity and good adhesion to a substrate, and the semiconductor device using the same has excellent solder cracking resistance. .
Claims (2)
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| JP2006206696A (en) * | 2005-01-26 | 2006-08-10 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2006328360A (en) * | 2005-04-28 | 2006-12-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP5062714B2 (en) * | 2006-01-19 | 2012-10-31 | 日本化薬株式会社 | Active energy ray-curable resin composition and use thereof |
| KR100699191B1 (en) * | 2006-03-13 | 2007-03-23 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and the semiconductor device using thereof |
| JP4984722B2 (en) * | 2006-07-28 | 2012-07-25 | 住友ベークライト株式会社 | Epoxy resin composition, epoxy resin molding material and semiconductor device |
| KR100834351B1 (en) * | 2006-11-24 | 2008-06-02 | 제일모직주식회사 | Epoxy Resin Composition for Encapsulating Multichip?Package and the Multichip?Package using the same |
| KR100798675B1 (en) | 2006-12-12 | 2008-01-28 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and the semiconductor device using the??same |
| JP5473196B2 (en) * | 2007-05-16 | 2014-04-16 | 東レ・ダウコーニング株式会社 | Curable epoxy resin composition and cured product thereof |
| KR100934558B1 (en) * | 2007-10-08 | 2009-12-29 | 제일모직주식회사 | Adhesive film composition for semiconductor assembly comprising phenol type curable resin reacted with silane coupling agent and adhesive film |
| KR101023241B1 (en) * | 2009-12-28 | 2011-03-21 | 제일모직주식회사 | Adhensive composition for semiconductor device and adhensive film using the same |
| JP5423402B2 (en) * | 2010-01-06 | 2014-02-19 | 住友ベークライト株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| CN102372899A (en) * | 2010-08-11 | 2012-03-14 | 江苏中鹏新材料股份有限公司 | Flame-retarding green epoxy molding compound |
| CN101962466B (en) * | 2010-09-25 | 2012-01-04 | 江苏中鹏新材料股份有限公司 | Intrinsic flame-retardant epoxy resin composition for semiconductor package |
| CN101967266A (en) * | 2010-09-25 | 2011-02-09 | 江苏中鹏新材料股份有限公司 | Halogen-free fire-retarding epoxy resin composition |
| JP2013108024A (en) * | 2011-11-24 | 2013-06-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing and electronic component device |
| SG11201405065PA (en) * | 2012-03-01 | 2014-10-30 | Sumitomo Bakelite Co | Resin composition for rotor fixing, rotor, and automotive vehicle |
| JP2013234303A (en) * | 2012-05-11 | 2013-11-21 | Panasonic Corp | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP5949674B2 (en) | 2013-06-12 | 2016-07-13 | 信越化学工業株式会社 | Novel organosilicon compound, process for producing the same and adhesion improver |
| CN106592281B (en) * | 2016-12-15 | 2019-05-28 | 武汉纺织大学 | A method of improving coating and is impregnated with efficiency |
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| TWI320421B (en) | 2010-02-11 |
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