KR100924930B1 - Apparatus for treating substrate - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention discloses a substrate processing apparatus, characterized by injecting a gas into a central region of a lower portion of a substrate so as to eliminate a pressure difference between an upper portion and a lower portion of a substrate loaded on the substrate supporting member. According to this feature, it is possible to provide a substrate processing apparatus capable of minimizing deformation of the substrate to improve uniformity of the substrate processing process.

Substrate Support Member, Substrate, Negative Pressure, Gas Injection

Description

Substrate Processing Unit {APPARATUS FOR TREATING SUBSTRATE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a sheet-fed substrate processing apparatus which performs an etching or cleaning process while rotating a substrate.

Generally, semiconductor devices are manufactured by depositing and patterning various materials on a substrate in a thin film form. To this end, several different processes are required, such as a deposition process, a photographic process, an etching process and a cleaning process.

Among these processes, the etching process is a process of removing film quality formed on the substrate, and the cleaning process is a process of removing contaminants remaining on the surface of the substrate after each unit process for semiconductor manufacturing. The etching process and the cleaning process are classified into a wet method and a dry method according to the process method, and the wet method is classified into a batch type method and a spin type method.

The spin type has a configuration in which support pins for supporting a substrate are installed on an upper surface of the spin head, and the substrate supported by the support pins rotates as the spin head rotates. A front side nozzle is provided at an upper portion of the substrate, and the substrate is processed by supplying a treatment liquid (etch solution or cleaning liquid) to the upper surface of the substrate through the front side nozzle.

The present invention is to provide a substrate processing apparatus capable of minimizing deformation of a substrate loaded in a spin head.

Moreover, this invention is providing the substrate processing apparatus which can improve the uniformity of a substrate processing process.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a substrate processing apparatus according to the present invention supports a substrate in an upwardly spaced state, the substrate supporting member being rotatable; A processing liquid supply member for supplying a processing liquid from the upper portion of the substrate to the substrate; A first gas injection member for injecting gas toward an edge region of the lower part of the substrate to prevent the processing liquid supplied from the processing liquid supply member to the substrate from flowing into the lower portion of the substrate; And a second gas injecting member for injecting gas into a central region of the lower part of the substrate so as to cancel the pressure difference between the upper and lower portions of the substrate generated by the gas injected from the first gas injecting member. And the second gas injection member are provided separately from each other, and the exhaust member includes a gas exhaust line formed in the substrate support member to exhaust the gas supplied to the center region below the substrate; An exhaust pipe connected to the gas exhaust line; And a pump connected to the exhaust pipe.

In the substrate processing apparatus according to the present invention having the configuration as described above, the first gas injection member may be provided as a first gas line inclined outwardly on the support plate to inject gas into the edge region of the lower substrate. .

The substrate support member includes a disk-shaped support plate and pin members provided on the support plate, and the second gas injection member is formed on the support plate to inject gas into a central region below the substrate. Can be prepared as.

The outlet of the second gas line may be formed to be inclined inward on the upper surface of the support plate.

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The gas exhaust port of the gas exhaust line may be formed in the center of the upper surface of the support plate.

According to the present invention, the deformation of the substrate can be minimized by eliminating the pressure difference between the upper and lower portions of the substrate loaded on the substrate supporting member.

Moreover, according to this invention, the uniformity of a substrate processing process can be improved.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals have the same reference numerals as much as possible even if displayed on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

In the present embodiment, an etching apparatus for treating a substrate using an etching solution as a substrate processing apparatus will be described as an example. However, the technical idea of the present invention is not limited thereto, and the present invention may be applied to various apparatuses for performing a process by supplying a treatment liquid onto a substrate. In addition, in the present embodiment, a semiconductor wafer is described as an example of the substrate, but the present invention is not limited thereto and may be applied to various kinds of substrates such as glass substrates.

1 is a view showing an example of a substrate processing apparatus according to the present invention. Referring to FIG. 1, the substrate processing apparatus 10 according to the present invention includes a substrate supporting member 100, a processing liquid supply member 200, a processing liquid recovery member 300, and an exhaust cylinder 400.

The substrate support member 100 supports the wafer W during the process and may be rotated by the driver 140 to be described later during the process. The substrate supporting member 100 has a supporting plate 110 having a circular upper surface, and the pin member 120 supporting the wafer W is installed on the upper surface of the supporting plate 110. The pin member 120 has support pins 122 and chucking pins 124. The support pins 122 are spaced apart from each other at predetermined edges of the upper surface edge portion of the support plate 110, and are provided to protrude upward from the support plate 110. The support pins 122 support the bottom surface of the wafer W so that the wafer W is supported in a state spaced upward from the support plate 110. The chucking pins 124 are disposed on the outer side of the support pins 122, and the chucking pins 124 are provided to protrude upward. The chucking pins 124 align the wafers W such that the wafers W supported by the plurality of support pins 122 are in place on the support plate 110. During the process, the chucking pins 124 are in contact with the side of the wafer W to prevent the wafer W from being displaced.

A support shaft 130 supporting the support plate 110 is connected to the lower portion of the support plate 110, and the support shaft 130 is rotated by the driving unit 140 connected to the lower end thereof. The driving unit 140 may be provided by a motor or the like. As the support shaft 130 rotates, the support plate 110 and the wafer W rotate. In addition, the driver 140 moves the support plate 110 up and down when loading the wafer W on the support plate 110 or unloading the wafer W from the support plate 110 and when necessary during the substrate processing process. You can.

The processing liquid supply member 200 supplies the processing liquid to the wafer W placed on the substrate supporting member 100. The processing liquid supply member 200 is vertically disposed and has a nozzle 220 for supplying the processing liquid to the wafer (W). The nozzle 220 is supported by the nozzle support 240, the nozzle support 240 is disposed in a horizontal direction to maintain a right angle with the nozzle 220, one end of the nozzle support 240 is the end of the nozzle 220. Is coupled to. The other end of the nozzle support 240 is disposed in the vertical direction so as to maintain a right angle with the nozzle support 240, the moving rod 260 for moving the nozzle 220 during or before the process is coupled. The driving member 280 for moving the moving rod 260 may be a motor for rotating the nozzle 220, and optionally an assembly for linearly moving the nozzle 220 in the radial direction of the wafer W. .

The processing liquid supply member 200 may supply a plurality of processing liquids onto the wafer W. For example, the processing liquid supply member 200 may supply one or a plurality of etching liquids and a cleaning liquid such as deionized water onto the wafer (W). The nozzle 220 may have a plurality of passages therein to supply the etchant and deionized water to the wafer W through different paths. Optionally, a plurality of nozzles 220 may be provided, and each nozzle 220 may supply one etchant or deionized water to the wafer (W).

When the processing liquid supply member 200 supplies the processing liquid (etching liquid or deionized water) to the upper surface of the rotating wafer W, the processing liquid moves from the center of the upper surface of the wafer W to the edge by centrifugal force, which will be described later. The processing liquid recovery member 300 is recovered. However, some of the processing liquid may flow along the edge of the lower surface of the wafer W and flow into the lower space of the wafer W. In order to prevent this, the support plate 110 is provided with a first gas injection member 150 to inject gas toward an edge region of the lower portion of the wafer (W).

FIG. 2 is a view illustrating gas injection members provided to the substrate support member 100 of FIG. 1, and FIG. 3 is a view illustrating a chucking state of a substrate using the substrate support member of FIG. 2.

2 and 3, the first gas injection member 150 may include a first gas supply line 151 formed along a length direction of the support shaft 130 inside the support shaft 130, and a first gas supply. It has a first gas line 152 branched from line 151. The first gas line 152 is formed inside the support plate 110. At the end of the first gas line 152 is formed a discharge port 153 for injecting gas into the lower portion of the wafer (W), the discharge port 153 is inclined outward so that the injection direction of the gas toward the edge of the wafer (W) Is formed. One end of the first gas supply pipe 154 is connected to the first gas supply line 151, and a first gas supply source 155 is connected to the other end of the first gas supply pipe 154.

As shown in FIG. 3, when gas is supplied to the lower edge of the wafer W using the discharge port 153 inclined outwardly toward the edge of the wafer W, the pressure of the supplied gas is reduced. ) Can block the processing liquid flowing into the edge.

However, when gas is injected to the lower edge of the wafer W using the first gas injection member 150, a negative pressure is formed at the lower center of the wafer W. FIG. When a negative pressure is formed in the lower center of the wafer W, the center of the wafer W may be deformed into a convex shape downward due to the pressure difference from the upper center of the wafer W. In order to prevent this, the present invention provides a second gas injection member 160 that injects gas into the lower center area of the wafer W.

The second gas injection member 160 has a second gas supply line 161 formed along the longitudinal direction of the support shaft 130 inside the support shaft 130 and a second branched from the second gas supply line 161. Has a gas line 162. The second gas line 162 is formed inside the support plate 110. At the end of the second gas line 162, a discharge port 163 for injecting gas into the lower portion of the wafer W is formed, and the discharge hole 163 is inwardly directed such that the gas injection direction is toward the center region of the wafer W. It is formed to be inclined. One end of the second gas supply pipe 164 is connected to the second gas supply line 161, and a second gas supply source 165 is connected to the other end of the second gas supply pipe 164.

As shown in FIG. 3, when gas is supplied to the lower center area of the wafer W by using the discharge hole 163 inclined inwardly toward the center area of the wafer W, the first gas injection member 150 may be provided. The negative pressure formed by this cancels out. Therefore, the upper pressure and the lower pressure of the center portion of the wafer W are balanced to prevent the wafer W from being deformed. If the deformation of the wafer W is prevented, the uniformity of the substrate processing process can also be improved.

In addition, the support plate 110 and the support shaft 130 may be provided with an exhaust member 170 for exhausting the gas supplied to the center area under the wafer (W). The exhaust member 170 may be provided as an exhaust line 171 formed on the support plate 110 and the support shaft 130 to exhaust the gas supplied to the center area under the wafer W. An exhaust port 171a at one end of the exhaust line 171 may be formed at the center of the upper surface of the support plate 110. An exhaust pipe 172 is connected to the other end of the exhaust line 171, and a pump 173 is connected to the exhaust pipe 172.

Referring back to FIG. 1, the treatment liquid recovery member 300 recovers treatment liquids supplied from the nozzle 220 to enable reuse of the treatment liquid. The treatment liquid recovery member 300 provides a space 310 in which the substrate support member 100 is located, and has treatment liquid recovery containers 320 and 340 disposed to surround the substrate support member 100. .

The etchant may be provided in various ways depending on the type of film to be removed from the wafer (W), the case of using the two types of etchant in the case of the substrate processing apparatus 10 of the present embodiment.

The processing liquid recovery containers 320 and 340 include etching liquid recovery containers 320 and a cleaning liquid recovery container 340. The etching liquid recovery containers 320 recover the etching liquids supplied to the wafer W, and the cleaning liquid recovery container 340 recovers the deionized water supplied to the wafer W. The cleaning solution recovery container 340 is disposed at the outermost side, and the etching solution recovery containers 320 are disposed inside the cleaning solution recovery container 340. The etchant recovery bins 320 have an internal recovery bin 320a and an external recovery bin 320b, and the internal recovery bin 320a surrounds the substrate support member 100 closest to the substrate support member 100. The external recovery container 320b is disposed between the internal recovery container 320a and the cleaning liquid recovery container 340.

An exhaust cylinder 400 is provided under the substrate support member 100 and the processing liquid recovery member 300. Exhaust cylinder 400 has a generally cylindrical shape. Specifically, the exhaust pipe 400 separates the circular bottom wall 410, the side wall 412 extending upward from the lower wall 410, and the space 310 where the substrate processing process is performed and the interior of the exhaust pipe 400. It has a separating wall 414 provided to make it. The exhaust pipe 400 is connected to an exhaust pipe 430 provided with a suction member 420 such as a pump. In the space 330 where the substrate processing process is performed, each of the processing liquid recovery cylinders 320 and 340 and the exhaust cylinder 400 are configured to communicate with each other such that air flow is formed in the direction toward the processing liquid recovery cylinders 320 and 340. Built.

The driving unit 140 may move the substrate support member 100 up and down so that the relative height between the substrate support member 100 and the processing liquid recovery containers 320a, 320b, and 340 is adjusted in the processing liquid recovery member 300. have. For example, the driving unit 140 may have a height corresponding to the inner recovery container 320a of the substrate support member 100, a height corresponding to the external recovery container 320b, and the like, depending on the type of processing liquid supplied to the wafer W, and The substrate support member 100 may be moved to be positioned at a height corresponding to the cleaning liquid recovery container 340.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

1 is a view showing an example of a substrate processing apparatus according to the present invention,

FIG. 2 shows gas ejection members provided in the substrate support member of FIG. 1; FIG.

3 is a view illustrating a chucking state of a substrate using the substrate support member of FIG. 2.

<Description of Symbols for Main Parts of Drawings>

100 substrate support member 110 support plate

130 support shaft 150 first gas injection member

160: second gas injection member 170: exhaust member

200: treatment liquid supply member 300: treatment liquid recovery member

400: exhaust pipe

Claims (7)

A rotatable substrate support member having a support plate and support pins protruding upward from the support plate to support a lower surface of the substrate; A processing liquid supply member for supplying a processing liquid from the upper portion of the substrate to the substrate; A first gas injection member for injecting gas toward an edge region of the lower part of the substrate to prevent the processing liquid supplied from the processing liquid supply member to the substrate from flowing into the lower portion of the substrate; A second gas injecting member for injecting gas into a central region of the lower part of the substrate so as to eliminate a pressure difference between the upper and lower portions of the substrate generated by the gas injected from the first gas injecting member; And, An exhaust member for exhausting the gas supplied to the center region of the lower substrate by the second gas injection member, The first gas injection member and the second gas injection member are provided to be separated from each other, The exhaust member, A gas exhaust line formed in the substrate support member to exhaust the gas supplied to the center region below the substrate; An exhaust pipe connected to the gas exhaust line; And a pump connected to the exhaust pipe. The method of claim 1, And the first gas injecting member is formed of a first gas line inclined outwardly on the support plate to inject gas into an edge region of the lower portion of the substrate. The method of claim 2, And the second gas injecting member is provided with a second gas line formed in the support plate to inject gas into a central region below the substrate. The method of claim 3, wherein And a discharge port of the second gas line is inclined inwardly on an upper surface of the support plate. delete delete The method according to any one of claims 1 to 4, The gas exhaust port of the gas exhaust line is formed in the center of the upper surface of the support plate.

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