KR100374470B1 - 세라믹 커패시터 및 그 제조방법 - Google Patents
세라믹 커패시터 및 그 제조방법 Download PDFInfo
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- KR100374470B1 KR100374470B1 KR10-2000-0033214A KR20000033214A KR100374470B1 KR 100374470 B1 KR100374470 B1 KR 100374470B1 KR 20000033214 A KR20000033214 A KR 20000033214A KR 100374470 B1 KR100374470 B1 KR 100374470B1
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- dielectric ceramic
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- ceramic capacitor
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 6
- 239000000919 ceramic Substances 0.000 claims abstract description 91
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 239000002994 raw material Substances 0.000 claims abstract description 20
- 230000001603 reducing effect Effects 0.000 claims abstract description 15
- 238000010304 firing Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims abstract description 3
- 238000010298 pulverizing process Methods 0.000 claims abstract description 3
- 238000007493 shaping process Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 4
- 239000000523 sample Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 9
- 229910052727 yttrium Inorganic materials 0.000 description 9
- 238000007747 plating Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004125 X-ray microanalysis Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- QKKWJYSVXDGOOJ-UHFFFAOYSA-N oxalic acid;oxotitanium Chemical compound [Ti]=O.OC(=O)C(O)=O QKKWJYSVXDGOOJ-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
시료 번호 | 주성분 | 부성분 | |||||||||
조성기호 | 이차상 조성물 | 부성분 | 유리성분B2O3-SiO2- BaO 계 | ||||||||
이차상 조성물 | 평균입자크기 | Y2O3 | BaCO3 | MgO | NiO | MnCO3 | Co2O3 | ||||
몰 비 | (㎛) | 몰 비 | 중량비 | ||||||||
1 | BT | A | 3.0 | 0.30 | 0.5 | 0.1 | 0.5 | 0.4 | 0.1 | 0.1 | 0.9 |
2 | BT | B | 1.5 | 0.35 | 0.7 | 0.2 | 0.2 | 0.6 | 0.2 | 0.0 | 0.6 |
3 | BT | C | 4.2 | 0.30 | 0.3 | 0.0 | 0.7 | 0.2 | 0.2 | 0.01 | 0.8 |
4 | BT | D | 2.4 | 0.35 | 0.5 | 0.3 | 0.1 | 0.5 | 0.1 | 0.1 | 0.5 |
5 | BT | E | 3.0 | 0.40 | 0.3 | 0.1 | 0.6 | 0.1 | 0.3 | 0.2 | 0.8 |
6 | BTCZ | A | 3.0 | 0.30 | 0.5 | 0.1 | 0.5 | 0.4 | 0.1 | 0.1 | 0.9 |
(주) BT : BaTiO3, BTCZ : Ba0.99Ca0.01Ti0.98Zr0.02O3 |
시료 번호 | 소성 온도 | 이차상 크기의 비 | CR 곱 | 평균 수명 | 고습 부하 시험 | 비 유전율ε | 유전 손실 | 온도에 대한 용량 변화율 | |
(℃) | (ΩF) | (시간) | (불량수,개) | (%) | -55℃ | 125℃ | |||
1 | 1260 | 0.10 | 4330 | 377 | 0 | 3620 | 2.5 | -1.1 | -8.5 |
2 | 1240 | 0.30 | 4110 | 201 | 0 | 3580 | 2.3 | -1.0 | -7.1 |
3 | 1280 | 0.10 | 4520 | 310 | 0 | 4050 | 2.8 | -1.1 | -10.1 |
4 | 1300 | 0.20 | 4220 | 305 | 0 | 4010 | 2.7 | -1.0 | -10.1 |
5 | 1220 | 0.15 | 4400 | 490 | 0 | 4100 | 2.9 | -1.0 | -10.5 |
6 | 1250 | 0.11 | 4600 | 333 | 0 | 3550 | 2.4 | -2.0 | -10.0 |
시료 번호 | 주성분 | 부성분 조성 기호 | 소성 온도(℃) | 이차상 크기의 비 | CR 곱 | 평균 수명 | 고습 부하 시험 | 비 유전율ε | 유전 손실 | 온도에 대한 용량 변화율 | |
(ΩF) | (시간) | (불량수,개) | (%) | -55℃ | 125℃ | ||||||
* 7 | BT | A | 1270 | 0.50 | 3960 | 28 | 9 | 3500 | 2.4 | -1.0 | -10.2 |
* 8 | BT | B | 1260 | 0.40 | 3710 | 16 | 11 | 3490 | 2.2 | -1.0 | -9.1 |
* 9 | BT | C | 1290 | 0.45 | 3990 | 19 | 25 | 3950 | 2.8 | -1.0 | -11.1 |
* 10 | BT | D | 1300 | 0.50 | 4100 | 22 | 22 | 3900 | 2.5 | -1.2 | -11.5 |
* 11 | BT | E | 1200 | 0.40 | 4010 | 40 | 12 | 3950 | 3.0 | -1.0 | -12.0 |
* 12 | BCTZ | A | 1260 | 0.52 | 4500 | 25 | 14 | 3500 | 2.4 | -2.1 | -12.9 |
Claims (6)
- 한 쌍의 전극들 사이에 개재된 유전체 세라믹 층을 포함하는 세라믹 커패시터로서,상기 유전체 세라믹 층은 희토류 원소 또는 Si를 포함하는 주상 및 그 안에 분포된 이차상을 포함하고,상기 이차상은 상기 주상으로부터 편석된 물질을 포함하고, 주상 내 물질의 농도보다 적어도 10배 이상의 농도로 희토류 원소 또는 Si를 포함하는 적어도 하나의 물질을 함유하고,상기 이차상은 상기 유전체 세라믹 층의 두께 방향에서 측정된 상기 유전체 세라믹 층 두께의 약 1/3 보다 크지 않은 크기를 갖는 것을 특징으로 하는 세라믹 커패시터.
- 제 1항에 있어서, 상기 유전체 세라믹 층은 중성 또는 환원환경 하에서의 소성에 의하여 형성되고, 화학식 ABO3로 표현되어 A는 Ba, Sr, Ca, 및 Mg 중 적어도 하나를 나타내고 B는 Ti, Zr, 및 Hf 중 적어도 하나를 타나내는 주성분, 적어도 하나의 희토류 산화물 및 SiO2및 B2O3를 주성분으로 하는 유리성분을 포함하는 비환원성 유전체 세라믹을 포함하는 것을 특징으로 하는 세라믹 커패시터.
- 제 2항에 있어서, 상기 이차상은 희토류 원소를 포함하는 것을 특징으로 하는 세라믹 커패시터.
- 제 1항 내지 3항 중 어느 한 항에 있어서, 상기 세라믹 커패시터는 복수의 유전체 세라믹 층, 상기 세라믹 층 사이에 제공되어 있는 내부전극 및 상기 내부전극과 전기적으로 접속하는 외부전극을 포함하는 모놀리식 세라믹 커패시터인 것을특징으로 하는 세라믹 커패시터.
- 유전체 세라믹의 주상(primary phase)에서 이차상(secondary phase)을 구성하는 화합물을 혼합하는 단계;상기 혼합물을 어닐링(annealing)하고 가루로 분쇄(pulverizing)하여 이차상의 원료를 제조하는 단계;상기 이차상의 원료와 상기 이차상의 원료에 전혀 포함되어 있지 않거나 불충분하게 포함되어 있는 그 외의 유전체 세라믹용 재료를 혼합하는 단계;상기 혼합물을 성형(shaping)하고 소성하여 유전체 세라믹을 형성하는 단계; 및상기 유전체 세라믹 상에 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 세라믹 커패시터의 제조방법.
- 제 5항에 있어서, 상기 세라믹 커패시터는 복수의 유전체 세라믹 층, 상기 세라믹 층 사이에 제공되어 있는 내부전극 및 상기 내부전극과 전기적으로 접속하는 외부전극을 포함하는 모놀리식 세라믹 커패시터인 것을 특징으로 하는 세라믹 커패시터의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11170961A JP2001006966A (ja) | 1999-06-17 | 1999-06-17 | セラミックコンデンサおよびその製造方法 |
JP11-170961 | 1999-06-17 |
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Publication Number | Publication Date |
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KR20010029809A KR20010029809A (ko) | 2001-04-16 |
KR100374470B1 true KR100374470B1 (ko) | 2003-03-04 |
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KR10-2000-0033214A KR100374470B1 (ko) | 1999-06-17 | 2000-06-16 | 세라믹 커패시터 및 그 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6301092B1 (ko) |
JP (1) | JP2001006966A (ko) |
KR (1) | KR100374470B1 (ko) |
DE (1) | DE10024236B4 (ko) |
GB (1) | GB2351182B (ko) |
TW (1) | TW454209B (ko) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002265261A (ja) * | 2001-03-07 | 2002-09-18 | Murata Mfg Co Ltd | 積層セラミックコンデンサ |
JP4506090B2 (ja) * | 2003-03-25 | 2010-07-21 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
US7508651B2 (en) | 2003-07-09 | 2009-03-24 | Maxwell Technologies, Inc. | Dry particle based adhesive and dry film and methods of making same |
US7352558B2 (en) | 2003-07-09 | 2008-04-01 | Maxwell Technologies, Inc. | Dry particle based capacitor and methods of making same |
US7791860B2 (en) | 2003-07-09 | 2010-09-07 | Maxwell Technologies, Inc. | Particle based electrodes and methods of making same |
US7342770B2 (en) * | 2003-07-09 | 2008-03-11 | Maxwell Technologies, Inc. | Recyclable dry particle based adhesive electrode and methods of making same |
US7295423B1 (en) * | 2003-07-09 | 2007-11-13 | Maxwell Technologies, Inc. | Dry particle based adhesive electrode and methods of making same |
US7920371B2 (en) | 2003-09-12 | 2011-04-05 | Maxwell Technologies, Inc. | Electrical energy storage devices with separator between electrodes and methods for fabricating the devices |
US7495349B2 (en) * | 2003-10-20 | 2009-02-24 | Maxwell Technologies, Inc. | Self aligning electrode |
US7384433B2 (en) | 2004-02-19 | 2008-06-10 | Maxwell Technologies, Inc. | Densification of compressible layers during electrode lamination |
US7090946B2 (en) | 2004-02-19 | 2006-08-15 | Maxwell Technologies, Inc. | Composite electrode and method for fabricating same |
US7227737B2 (en) | 2004-04-02 | 2007-06-05 | Maxwell Technologies, Inc. | Electrode design |
JP2006005222A (ja) | 2004-06-18 | 2006-01-05 | Tdk Corp | セラミック電子部品およびその製造方法 |
US7245478B2 (en) * | 2004-08-16 | 2007-07-17 | Maxwell Technologies, Inc. | Enhanced breakdown voltage electrode |
US7492574B2 (en) | 2005-03-14 | 2009-02-17 | Maxwell Technologies, Inc. | Coupling of cell to housing |
US7440258B2 (en) | 2005-03-14 | 2008-10-21 | Maxwell Technologies, Inc. | Thermal interconnects for coupling energy storage devices |
JP2006265003A (ja) * | 2005-03-22 | 2006-10-05 | Nippon Chem Ind Co Ltd | 誘電体セラミック形成用組成物および誘電体セラミック材料 |
JP4862501B2 (ja) * | 2005-08-05 | 2012-01-25 | 株式会社村田製作所 | 誘電体セラミック、その製造方法及び積層セラミックコンデンサ |
US8518573B2 (en) | 2006-09-29 | 2013-08-27 | Maxwell Technologies, Inc. | Low-inductive impedance, thermally decoupled, radii-modulated electrode core |
DE102006060432A1 (de) * | 2006-12-20 | 2008-06-26 | Epcos Ag | Elektrisches Bauelement sowie Außenkontakt eines elektrischen Bauelements |
US7541306B2 (en) * | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
US20080201925A1 (en) | 2007-02-28 | 2008-08-28 | Maxwell Technologies, Inc. | Ultracapacitor electrode with controlled sulfur content |
JP4687680B2 (ja) * | 2007-03-29 | 2011-05-25 | Tdk株式会社 | 誘電体磁器組成物の製造方法および電子部品の製造方法 |
US7859823B2 (en) * | 2007-06-08 | 2010-12-28 | Murata Manufacturing Co., Ltd. | Multi-layered ceramic electronic component |
JP4967964B2 (ja) * | 2007-09-28 | 2012-07-04 | Tdk株式会社 | 誘電体磁器組成物および積層型電子部品 |
CN101580389B (zh) * | 2009-06-10 | 2013-05-01 | 广东风华高新科技股份有限公司 | 一种低频高介电抗还原瓷料及其制备方法 |
TW201107267A (en) * | 2009-08-21 | 2011-03-01 | Darfon Electronics Corp | Ceramic powder composition, ceramic material and laminated ceramic capacitor made of the same |
CN101786864B (zh) * | 2009-12-22 | 2012-12-05 | 广东风华高新科技股份有限公司 | 一种与镍内电极匹配的陶瓷介质材料及所得电容器的制备方法 |
CN101786866B (zh) * | 2009-12-22 | 2012-12-05 | 广东风华高新科技股份有限公司 | 一种抗还原性铜内电极高频低温烧结陶瓷介质材料 |
JP5685931B2 (ja) * | 2010-12-27 | 2015-03-18 | Tdk株式会社 | 積層セラミックコンデンサ |
US8908353B2 (en) | 2011-03-04 | 2014-12-09 | Taiyo Yuden Co., Ltd. | Laminated ceramic capacitor |
WO2013018789A1 (ja) * | 2011-08-02 | 2013-02-07 | 株式会社村田製作所 | 積層セラミックコンデンサ |
KR20130070097A (ko) * | 2011-12-19 | 2013-06-27 | 삼성전기주식회사 | 전자 부품 및 그 제조 방법 |
JP5919847B2 (ja) * | 2012-01-30 | 2016-05-18 | Tdk株式会社 | 積層セラミックコンデンサ |
JP6089770B2 (ja) * | 2013-02-25 | 2017-03-08 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
KR101535752B1 (ko) * | 2014-11-11 | 2015-07-09 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 |
KR101528431B1 (ko) * | 2014-11-12 | 2015-06-11 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 |
KR102691312B1 (ko) | 2018-09-05 | 2024-08-05 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
JP7276663B2 (ja) * | 2019-12-27 | 2023-05-18 | Tdk株式会社 | 誘電体組成物および電子部品 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226774A (ja) * | 1988-03-04 | 1989-09-11 | Matsushita Electric Ind Co Ltd | 複合セラミック組成物 |
JPH0822929A (ja) * | 1994-07-05 | 1996-01-23 | Murata Mfg Co Ltd | セラミック電子部品 |
JPH0935985A (ja) * | 1995-07-19 | 1997-02-07 | Murata Mfg Co Ltd | セラミック積層電子部品 |
JPH1074666A (ja) * | 1996-08-30 | 1998-03-17 | Kyocera Corp | 積層型コンデンサ |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742588A (en) * | 1980-08-25 | 1982-03-10 | Saito Osamu | Heat-insulating material for spray filling |
JPH0678189B2 (ja) * | 1984-10-20 | 1994-10-05 | 京セラ株式会社 | 非還元性高誘電率系誘電体磁器組成物 |
JPH0785460B2 (ja) * | 1986-04-29 | 1995-09-13 | 京セラ株式会社 | 積層型磁器コンデンサ |
JPS6474666A (en) * | 1987-09-16 | 1989-03-20 | Fujitsu Ltd | Sentence read-out/correction device |
US4978646A (en) * | 1989-03-03 | 1990-12-18 | Corning Incorporated | Capacitors and high dielectric constant ceramics therefor |
JPH06114611A (ja) * | 1992-09-30 | 1994-04-26 | Mitsubishi Materials Corp | ワーク保持装置 |
EP0625492A1 (en) * | 1993-05-20 | 1994-11-23 | TDK Corporation | Dielectric ceramic material and method for making |
US5646080A (en) * | 1995-11-20 | 1997-07-08 | Tam Ceramics, Inc. | Dielectric stable at high temperature |
JP3024537B2 (ja) * | 1995-12-20 | 2000-03-21 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JPH1029861A (ja) * | 1996-07-16 | 1998-02-03 | Matsushita Electric Ind Co Ltd | 高誘電率誘電体磁器組成物 |
JP3180690B2 (ja) * | 1996-07-19 | 2001-06-25 | 株式会社村田製作所 | 積層セラミックコンデンサ |
SG48535A1 (en) * | 1996-08-05 | 1998-04-17 | Murata Manufacturing Co | Dielectric ceramic composition and monolithic ceramic capacitor using the same |
JP3039417B2 (ja) * | 1997-02-07 | 2000-05-08 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JPH10255549A (ja) * | 1997-03-05 | 1998-09-25 | Tdk Corp | 誘電体セラミック材料およびその製造方法並びに積層セラミックコンデンサ |
-
1999
- 1999-06-17 JP JP11170961A patent/JP2001006966A/ja active Pending
-
2000
- 2000-04-27 TW TW089108022A patent/TW454209B/zh not_active IP Right Cessation
- 2000-05-17 DE DE10024236A patent/DE10024236B4/de not_active Expired - Lifetime
- 2000-06-02 GB GB0013555A patent/GB2351182B/en not_active Expired - Lifetime
- 2000-06-09 US US09/591,298 patent/US6301092B1/en not_active Expired - Lifetime
- 2000-06-16 KR KR10-2000-0033214A patent/KR100374470B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226774A (ja) * | 1988-03-04 | 1989-09-11 | Matsushita Electric Ind Co Ltd | 複合セラミック組成物 |
JPH0822929A (ja) * | 1994-07-05 | 1996-01-23 | Murata Mfg Co Ltd | セラミック電子部品 |
JPH0935985A (ja) * | 1995-07-19 | 1997-02-07 | Murata Mfg Co Ltd | セラミック積層電子部品 |
JPH1074666A (ja) * | 1996-08-30 | 1998-03-17 | Kyocera Corp | 積層型コンデンサ |
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KR20010029809A (ko) | 2001-04-16 |
DE10024236B4 (de) | 2007-02-15 |
GB0013555D0 (en) | 2000-07-26 |
US6301092B1 (en) | 2001-10-09 |
TW454209B (en) | 2001-09-11 |
GB2351182B (en) | 2002-05-08 |
GB2351182A (en) | 2000-12-20 |
JP2001006966A (ja) | 2001-01-12 |
DE10024236A1 (de) | 2001-02-01 |
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