JPWO2020174315A5 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JPWO2020174315A5 JPWO2020174315A5 JP2021501136A JP2021501136A JPWO2020174315A5 JP WO2020174315 A5 JPWO2020174315 A5 JP WO2020174315A5 JP 2021501136 A JP2021501136 A JP 2021501136A JP 2021501136 A JP2021501136 A JP 2021501136A JP WO2020174315 A5 JPWO2020174315 A5 JP WO2020174315A5
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- semiconductor equipment
- semiconductor
- equipment
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019035103 | 2019-02-28 | ||
JP2019035103 | 2019-02-28 | ||
PCT/IB2020/051316 WO2020174315A1 (ja) | 2019-02-28 | 2020-02-18 | 半導体装置、および半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2020174315A1 JPWO2020174315A1 (ja) | 2020-09-03 |
JPWO2020174315A5 true JPWO2020174315A5 (ja) | 2023-02-20 |
JP7314249B2 JP7314249B2 (ja) | 2023-07-25 |
Family
ID=72239233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021501136A Active JP7314249B2 (ja) | 2019-02-28 | 2020-02-18 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220020883A1 (ja) |
JP (1) | JP7314249B2 (ja) |
KR (1) | KR20210130167A (ja) |
CN (1) | CN113491006A (ja) |
WO (1) | WO2020174315A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024154036A1 (ja) * | 2023-01-20 | 2024-07-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015053477A (ja) * | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
WO2015097596A1 (en) | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9929279B2 (en) * | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10096489B2 (en) | 2014-03-06 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9954112B2 (en) * | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6725357B2 (ja) * | 2015-08-03 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
JP6887243B2 (ja) * | 2015-12-11 | 2021-06-16 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置、電子機器及び半導ウエハ |
JP6851814B2 (ja) * | 2015-12-29 | 2021-03-31 | 株式会社半導体エネルギー研究所 | トランジスタ |
US9954003B2 (en) * | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10411003B2 (en) * | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2019016642A1 (ja) * | 2017-07-21 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
CN111081773B (zh) * | 2018-10-18 | 2023-03-24 | 联华电子股份有限公司 | 氧化物半导体装置以及其制作方法 |
KR20220020831A (ko) * | 2019-06-14 | 2022-02-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
-
2020
- 2020-02-18 JP JP2021501136A patent/JP7314249B2/ja active Active
- 2020-02-18 CN CN202080016065.9A patent/CN113491006A/zh active Pending
- 2020-02-18 KR KR1020217028554A patent/KR20210130167A/ko active IP Right Grant
- 2020-02-18 US US17/428,825 patent/US20220020883A1/en active Pending
- 2020-02-18 WO PCT/IB2020/051316 patent/WO2020174315A1/ja active Application Filing
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