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JPWO2020174315A5 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JPWO2020174315A5
JPWO2020174315A5 JP2021501136A JP2021501136A JPWO2020174315A5 JP WO2020174315 A5 JPWO2020174315 A5 JP WO2020174315A5 JP 2021501136 A JP2021501136 A JP 2021501136A JP 2021501136 A JP2021501136 A JP 2021501136A JP WO2020174315 A5 JPWO2020174315 A5 JP WO2020174315A5
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Japan
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semiconductor equipment
semiconductor
equipment
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JP2021501136A
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JPWO2020174315A1 (ja
JP7314249B2 (ja
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Priority claimed from PCT/IB2020/051316 external-priority patent/WO2020174315A1/ja
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Publication of JPWO2020174315A5 publication Critical patent/JPWO2020174315A5/ja
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JP2021501136A 2019-02-28 2020-02-18 半導体装置 Active JP7314249B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019035103 2019-02-28
JP2019035103 2019-02-28
PCT/IB2020/051316 WO2020174315A1 (ja) 2019-02-28 2020-02-18 半導体装置、および半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPWO2020174315A1 JPWO2020174315A1 (ja) 2020-09-03
JPWO2020174315A5 true JPWO2020174315A5 (ja) 2023-02-20
JP7314249B2 JP7314249B2 (ja) 2023-07-25

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ID=72239233

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JP2021501136A Active JP7314249B2 (ja) 2019-02-28 2020-02-18 半導体装置

Country Status (5)

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US (1) US20220020883A1 (ja)
JP (1) JP7314249B2 (ja)
KR (1) KR20210130167A (ja)
CN (1) CN113491006A (ja)
WO (1) WO2020174315A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024154036A1 (ja) * 2023-01-20 2024-07-25 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015053477A (ja) * 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929279B2 (en) * 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9954112B2 (en) * 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6725357B2 (ja) * 2015-08-03 2020-07-15 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
JP6887243B2 (ja) * 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
JP6851814B2 (ja) * 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
US9954003B2 (en) * 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10411003B2 (en) * 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2019016642A1 (ja) * 2017-07-21 2019-01-24 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN111081773B (zh) * 2018-10-18 2023-03-24 联华电子股份有限公司 氧化物半导体装置以及其制作方法
KR20220020831A (ko) * 2019-06-14 2022-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

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