JPS63260132A - Surface modification apparatus - Google Patents
Surface modification apparatusInfo
- Publication number
- JPS63260132A JPS63260132A JP9317887A JP9317887A JPS63260132A JP S63260132 A JPS63260132 A JP S63260132A JP 9317887 A JP9317887 A JP 9317887A JP 9317887 A JP9317887 A JP 9317887A JP S63260132 A JPS63260132 A JP S63260132A
- Authority
- JP
- Japan
- Prior art keywords
- treated
- heat
- quick
- rays
- heat rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012986 modification Methods 0.000 title claims description 9
- 230000004048 modification Effects 0.000 title claims description 9
- 239000000376 reactant Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 9
- 150000002367 halogens Chemical class 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 13
- 239000011368 organic material Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ドライな条件で有機物を除去するなど、被処
理物表面の清浄化に好適な表面改質装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a surface modification device suitable for cleaning the surface of an object to be treated, such as removing organic substances under dry conditions.
従来の有機物除去装置は、特開昭55−115336号
に示されているように1反応槽中に設置された被処理物
を載せるステージにヒータを組込み、上記ヒータにより
ステージを加熱し、被処理物とステージとの接触に伴う
熱伝導により、上記被処理物を間接的に加熱して、上記
反応槽中で照射した紫外線により被処理物の有機物を解
離させるとともに、上記反応槽中に送り込んだ反応ガス
に紫外線を照射することにより生じる活性酸素によって
。As shown in Japanese Patent Application Laid-open No. 115336/1983, a conventional organic matter removal device incorporates a heater into a stage on which the object to be treated is placed in one reaction tank. The object to be treated is indirectly heated by heat conduction caused by contact between the object and the stage, and the organic matter in the object is dissociated by ultraviolet rays irradiated in the reaction tank, and then sent into the reaction tank. By active oxygen generated by irradiating reactant gas with ultraviolet rays.
上記被処理物表面に堆積した有機物を除去しやすくして
いる。This makes it easier to remove organic substances deposited on the surface of the object to be treated.
上記従来技術では、被処理物を加熱されたステージ上に
載置して、これらの接触伝導により被処理物を加熱する
方法を行っており、被処理物を輻射熱で直接加熱する点
については配慮されておらず、被処理物表面の温度上昇
速度が遅いという問題があった。In the above conventional technology, the workpiece is placed on a heated stage and heated by contact conduction, and consideration must be given to directly heating the workpiece with radiant heat. However, there was a problem in that the rate of temperature rise on the surface of the object to be processed was slow.
本発明は、清浄な方法で、被処理物表面を有効。The present invention effectively cleans the surface of the workpiece in a clean manner.
かつ急速に、しかも均一に加熱できる表面改質装置を得
ることを目的とする。The object of the present invention is to obtain a surface modification device that can heat rapidly and uniformly.
上記目的は、被処理物表面に熱線を照射して、輻射熱に
より加熱することで達成される。すなわち、被処理物表
面には、反応ガスとこれを活性化する紫外線に加えて、
被処理物表面を加熱する熱線を同時に供給する。上記熱
線の供給源は、例えばハロゲン電球などであり、上記ハ
ロゲン電球からの放射を、反射鏡を利用して有効に被処
理物表面に照射して加熱する。The above object is achieved by irradiating the surface of the object with heat rays and heating it with radiant heat. In other words, in addition to the reactive gas and the ultraviolet rays that activate it,
At the same time, a hot wire is supplied to heat the surface of the object to be treated. The source of the heat rays is, for example, a halogen bulb, and the radiation from the halogen bulb is effectively irradiated onto the surface of the workpiece using a reflecting mirror to heat it.
表面改質装置では、反応室内で被処理物を回転ステージ
に載置して、反応ガスとともに紫外線および熱線を供給
する。被処理物を回転ステージに載せて回転するのは、
供給する反応ガス、紫外線。In the surface modification apparatus, the object to be treated is placed on a rotation stage in a reaction chamber, and ultraviolet rays and heat rays are supplied together with a reaction gas. The workpiece is placed on a rotating stage and rotated.
Reactant gas and ultraviolet rays to be supplied.
熱線が被処理物の表面に均一に供給されるようにする効
果がある。This has the effect of uniformly supplying the heat rays to the surface of the object to be treated.
、紫外線を供給することは、上記紫外線のエネルギーに
よって、被処理物表面に堆積した有機物の化学結合を解
離させるとともに、上記紫外線によって反応ガスを分解
し活性化させるという動作を行う。活性化された反応ガ
スは、上記有機物の構成原子と反応し、ガス化すること
により蒸発させて上記有機物を除去する。上記熱線はこ
れらの反応速度を速める働きをする。The supply of ultraviolet rays causes the energy of the ultraviolet rays to dissociate the chemical bonds of organic matter deposited on the surface of the object to be treated, and the ultraviolet rays to decompose and activate the reactive gas. The activated reaction gas reacts with constituent atoms of the organic substance, and is gasified and evaporated to remove the organic substance. The hot wire acts to speed up these reactions.
上記熱線を被処理物の表面側から供給することは、被処
理物表面の回転と相まって急速に被処理面を均一加熱で
き、従来方法の接触熱伝導による加熱ではないため、被
処理物の温度上昇が速く。By supplying the above-mentioned hot wire from the surface side of the workpiece, combined with the rotation of the workpiece surface, the workpiece surface can be rapidly and uniformly heated, and since heating is not done by contact heat conduction as in the conventional method, the temperature of the workpiece increases. Rising quickly.
回転ステージとの接触不良による温度分布の不均一を生
じるようなことがない。There is no possibility of uneven temperature distribution due to poor contact with the rotating stage.
つぎに本発明の実施例を図面とともに説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明による表面改質装置の一実施例を示す概
要図、第2図は上記実施例における被処理物表面の温度
上昇を示す図である。第1図において1反応室内には熱
容量が小さい回転ステージ1を設け、上記回転ステージ
1上に被処理物2を載せている。上記被処理物2の上方
を、紫外線および熱線を透過する石英板7で仕切ったラ
ンプ室8には、熱線供給用のハロゲン電球3と紫外線ラ
ンプ5とを、それぞれ被処理物2の表面が均一に照射さ
れるように配置し、上記各ランプ3および5の放射光を
有効に被処理物2の表面に反射させる反射鏡をそれぞれ
備えている。上記反応室内に導入する反応ガスの導入管
は反応室内で多くの枝管に分岐され、それぞれの枝管は
上記反射鏡4を貫通し、ハロゲン電球3および紫外線ラ
ンプ5の間を通り5石英板7を貫通し被処理物2の表面
に対して開口している。したがって、オゾンを含む酸素
ガスからなる反応ガスは、上記導入管から枝管を経て直
接被処理物2の表面に導入される。上記反応ガスに含ま
れるオゾンが紫外線を吸収し、被処理物2の表面におけ
る紫外線の強度を低下させないことと、紫外線により上
記オゾンが分解されてできる活性酸素密度が被処理物2
の表面で濃くなるように、上記被処理物2の表面は紫外
線光源に近づけて回転する0本実施例では、上記各ラン
プと被処理物との間に石英板が介在するため、上記反応
ガスの被処理物表面に対する流れが早く、しかも均一に
なる。上記被処理物2の表面と石英板7との間隔は1m
1m前後にするのが望ましい。FIG. 1 is a schematic diagram showing an embodiment of a surface modification apparatus according to the present invention, and FIG. 2 is a diagram showing a temperature rise on the surface of a treated object in the above embodiment. In FIG. 1, a rotary stage 1 having a small heat capacity is provided in one reaction chamber, and a workpiece 2 is placed on the rotary stage 1. A lamp chamber 8 partitioned above the object 2 by a quartz plate 7 that transmits ultraviolet rays and heat rays is equipped with a halogen bulb 3 for supplying heat rays and an ultraviolet lamp 5, each of which has a uniform surface. Each of the lamps 3 and 5 includes a reflecting mirror that effectively reflects the emitted light from the lamps 3 and 5 onto the surface of the object 2 to be processed. The introduction tube for the reaction gas introduced into the reaction chamber is branched into many branch tubes within the reaction chamber, and each branch tube passes through the reflector 4 and passes between the halogen bulb 3 and the ultraviolet lamp 5, and passes through the quartz plate 5. 7 and is open to the surface of the object 2 to be processed. Therefore, the reaction gas consisting of oxygen gas containing ozone is directly introduced into the surface of the object to be treated 2 from the introduction pipe via the branch pipe. The ozone contained in the reaction gas absorbs ultraviolet rays and does not reduce the intensity of the ultraviolet rays on the surface of the object 2 to be treated, and the density of active oxygen generated when the ozone is decomposed by ultraviolet rays is lower than that of the object 2 to be treated.
The surface of the object 2 to be treated is rotated close to the ultraviolet light source so that the surface of the object 2 becomes darker. The flow to the surface of the object to be treated is fast and uniform. The distance between the surface of the object 2 and the quartz plate 7 is 1 m.
It is desirable to keep it around 1m.
また1本実施例では回転する被処理物面に直接熱線が供
給されて加熱するため、上記被処理物表面の温度上昇が
早く、しかも均一な温度分布になり、被処理物表面の有
機物の除去速度は早くなる。In addition, in this embodiment, heat rays are directly supplied to the surface of the rotating workpiece to heat it, so the temperature on the surface of the workpiece rises quickly and has a uniform temperature distribution, allowing the removal of organic matter on the surface of the workpiece. The speed will be faster.
また1反射鏡4は紫外線ランプ5およびハロゲン電球3
の個々に対応するそれぞれの反射鏡を連結して構成して
もよく、あるいは、それぞれの反射鏡を連続して形成し
てもよいが、紫外線ランプ5の反射鏡面はアルミニウム
蒸着またはアルミニウムの鏡面研磨面とし、ハロゲン電
球の反射鏡面は金メッキ等の反射面とするのが望ましい
。In addition, 1 reflecting mirror 4 includes an ultraviolet lamp 5 and a halogen bulb 3.
The reflecting mirrors corresponding to the individual reflecting mirrors may be connected to each other, or the reflecting mirrors may be formed continuously, but the reflecting mirror surface of the ultraviolet lamp 5 may be formed by aluminum vapor deposition or mirror polishing of aluminum. It is desirable that the reflective mirror surface of the halogen bulb be a reflective surface such as gold plated.
なお、上記反射鏡4の反射鏡面を保護するため、および
ランプ室8内において紫外線によるオゾンの発生を防止
するために、ランプ室8の内部はN2などの不活性ガス
でパージすることが望ましい。Note that in order to protect the reflecting mirror surface of the reflecting mirror 4 and to prevent the generation of ozone in the lamp chamber 8 due to ultraviolet rays, it is desirable to purge the interior of the lamp chamber 8 with an inert gas such as N2.
第2図は上記実施例における被処理物2の表面温度上昇
を、従来例と比較して示した図である。FIG. 2 is a diagram showing the rise in surface temperature of the object to be processed 2 in the above embodiment in comparison with the conventional example.
回転ステージに付設したヒータによって、回転ステージ
の熱伝導を利用した従来の加熱方法を示す曲線Aに対し
、本発明による輻射熱の直接加熱では1曲線Bに示すよ
うに、反応に必要な温度に達する加熱時間を約172に
短縮することができた。In contrast to curve A, which shows the conventional heating method using the heat conduction of the rotary stage using a heater attached to the rotary stage, direct heating using radiant heat according to the present invention reaches the temperature necessary for the reaction, as shown in curve B. The heating time could be reduced to about 172 seconds.
本実施例では、熱線供給源としてハロゲン電球3を用い
た例を示したが、不純物を拡散するおそれがない他の赤
外線発生源を使用しても差支えないことはもちろんであ
る。In this embodiment, an example is shown in which the halogen light bulb 3 is used as the hot ray supply source, but it is of course possible to use other infrared radiation sources that are not likely to diffuse impurities.
上記のように本発明による表面改質装置は1回転台上の
被処理物表面に反応ガスを供給するとともに、紫外線を
照射する表面改質装置において、上記紫外線と同時に熱
線を照射することにより。As described above, the surface modification apparatus according to the present invention supplies a reactive gas to the surface of the object to be treated on a rotary table and irradiates the surface with ultraviolet rays, by simultaneously irradiating the ultraviolet rays with heat rays.
上記被処理物表面の温度上昇を速くでき、表面処理速度
が速い表面改質装置を得ることができる。It is possible to obtain a surface modification device that can increase the temperature of the surface of the object to be treated and has a high surface treatment speed.
また、被処理物表面を直接加熱するため、従来技術のよ
うに被処理物とステージとの接触不良により、上記被処
理物表面の温度分布が不均一になることはない。Furthermore, since the surface of the object to be processed is directly heated, the temperature distribution on the surface of the object to be processed does not become uneven due to poor contact between the object and the stage as in the prior art.
第1図は本発明による表面改質装置の一実施例を示す概
要図、第2図は上記実施例における被処理物表面の温度
上昇を示す図である。
1・・・回転ステージ 2・・・被処理物3・・・
熱線供給源(ハロゲン電球)
5・・・紫外線ランプFIG. 1 is a schematic diagram showing an embodiment of a surface modification apparatus according to the present invention, and FIG. 2 is a diagram showing a temperature rise on the surface of a treated object in the above embodiment. 1...Rotating stage 2...Workpiece 3...
Heat ray source (halogen bulb) 5... Ultraviolet lamp
Claims (1)
、紫外線を照射する表面改質装置において、上記紫外線
と同時に熱線を照射することを特徴とする表面改質装置
。1. A surface modification device that supplies a reactant gas to a workpiece on a rotary table and irradiates it with ultraviolet rays, characterized in that it irradiates heat rays at the same time as the ultraviolet rays.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9317887A JPS63260132A (en) | 1987-04-17 | 1987-04-17 | Surface modification apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9317887A JPS63260132A (en) | 1987-04-17 | 1987-04-17 | Surface modification apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63260132A true JPS63260132A (en) | 1988-10-27 |
Family
ID=14075322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9317887A Pending JPS63260132A (en) | 1987-04-17 | 1987-04-17 | Surface modification apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63260132A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0184427U (en) * | 1987-11-26 | 1989-06-05 | ||
US5830279A (en) * | 1995-09-29 | 1998-11-03 | Harris Corporation | Device and method for improving corrosion resistance and etch tool integrity in dry metal etching |
JP2008227033A (en) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | Substrate processing apparatus |
JP2009535825A (en) * | 2006-04-27 | 2009-10-01 | アプライド マテリアルズ インコーポレイテッド | Substrate processing chamber using dielectric barrier discharge lamp assembly |
KR100970210B1 (en) * | 2007-10-08 | 2010-07-16 | 세메스 주식회사 | Plate generating apparatus |
JP2011040656A (en) * | 2009-08-17 | 2011-02-24 | Nippon Telegr & Teleph Corp <Ntt> | Method of forming microstructure |
-
1987
- 1987-04-17 JP JP9317887A patent/JPS63260132A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0184427U (en) * | 1987-11-26 | 1989-06-05 | ||
US5830279A (en) * | 1995-09-29 | 1998-11-03 | Harris Corporation | Device and method for improving corrosion resistance and etch tool integrity in dry metal etching |
JP2009535825A (en) * | 2006-04-27 | 2009-10-01 | アプライド マテリアルズ インコーポレイテッド | Substrate processing chamber using dielectric barrier discharge lamp assembly |
JP2008227033A (en) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | Substrate processing apparatus |
KR100970210B1 (en) * | 2007-10-08 | 2010-07-16 | 세메스 주식회사 | Plate generating apparatus |
JP2011040656A (en) * | 2009-08-17 | 2011-02-24 | Nippon Telegr & Teleph Corp <Ntt> | Method of forming microstructure |
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