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JPS60149214A - Electrode of surface acoustic wave element - Google Patents

Electrode of surface acoustic wave element

Info

Publication number
JPS60149214A
JPS60149214A JP481284A JP481284A JPS60149214A JP S60149214 A JPS60149214 A JP S60149214A JP 481284 A JP481284 A JP 481284A JP 481284 A JP481284 A JP 481284A JP S60149214 A JPS60149214 A JP S60149214A
Authority
JP
Japan
Prior art keywords
electrode
acoustic wave
surface acoustic
wave element
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP481284A
Other languages
Japanese (ja)
Other versions
JP2596534B2 (en
Inventor
Kenji Hinode
憲治 日野出
Masao Kawamura
川村 雅雄
Hiroomi Kojima
小嶋 弘臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59004812A priority Critical patent/JP2596534B2/en
Publication of JPS60149214A publication Critical patent/JPS60149214A/en
Application granted granted Critical
Publication of JP2596534B2 publication Critical patent/JP2596534B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538Formation

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To attain easily a high output and a long lifetime for an electrode of a surface acoustic wave element by providing a conductor different from the electrode material or an insulator layer on the surface of the electrode. CONSTITUTION:An aluminum electrode 1 of 1,000Angstrom thickness is formed on an LiTaO3 substrate 2. Then a surface oxide film 3 having larger thickness than a natural oxide film is formed by a heat oxidation process. Therefore a layer formed on the aluminum surface suppresses the movement of atoms on the surface of the electrode 1 as well as the swelling of atoms on the surface. This attains a high output and a long lifetime easily for a surface acoustic wave element.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は表面弾性波素子の電極に関するもので、特に高
出力用の素子に好適な電極を提供するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an electrode for a surface acoustic wave device, and particularly provides an electrode suitable for a high-output device.

〔発明の背景〕[Background of the invention]

電極の劣化を抑制するために数チの銅を添加するのが有
効であることがわかっている。この方法で、純アルミニ
ウム電臘に比べ約10倍の出力が可能なことが報告され
ている。しかしながら出力レベルはまだ不十分である。
It has been found that it is effective to add several inches of copper to suppress electrode deterioration. It has been reported that this method can produce approximately 10 times more output than pure aluminum electric lamps. However, the output level is still insufficient.

また劣化の最終段階では電極間に放電が起き素子が破壊
するが、この原因は明確でなかった。
Furthermore, at the final stage of deterioration, a discharge occurs between the electrodes, destroying the device, but the cause of this is not clear.

〔発明の目的〕[Purpose of the invention]

本発明は表面弾性波素子の電極間の放電を抑制して、破
壊に至るまでの寿命を引き伸ばすことにより、素子を高
出力に耐えるよう忙することを目的としてなされたもの
である。
The present invention has been made for the purpose of suppressing discharge between the electrodes of a surface acoustic wave element and prolonging its lifespan until destruction, thereby making the element capable of withstanding high output.

〔発明の概要〕[Summary of the invention]

素子を動作させると電極上に、穴と突起が形成されるこ
とは周知であるが、それ以外妃相対する電極に向って電
極間に突起が形成され、これが破壊につながる放電を誘
起することが、劣化過程の詳細な観察によりわかった。
It is well known that holes and protrusions are formed on the electrodes when the device is operated, but in addition to this, protrusions are formed between the electrodes towards the opposing electrodes, which can induce electrical discharges that can lead to destruction. , was discovered through detailed observation of the deterioration process.

このような電極側方への突起発生を抑制することにより
、電極の寿命を改善できると考えられる。
It is thought that the life of the electrode can be improved by suppressing the occurrence of such protrusions on the side of the electrode.

〔発明の実施例〕[Embodiments of the invention]

LjTaOs 基板上に約1000人厚のアルミニウム
又は銅を2チ添加したアルミニウム電極を形成し、通常
のフォトエツチング法により、中心周波数610MH2
の表面弾性波フィルターを作製した。その後、表面被覆
のために、熱酸化法忙よシ自然酸化膜より厚い表面酸化
膜を形成したもの、及び選択化学気相成長法によシミ極
表面だけにタングステン層を被着したものを作製した。
An aluminum electrode with approximately 1,000 layers of aluminum or copper added to it is formed on an LjTaOs substrate, and a center frequency of 610 MH2 is formed by normal photoetching.
A surface acoustic wave filter was fabricated. Then, for surface coating, we used thermal oxidation to form a surface oxide film that was thicker than the natural oxide film, and selective chemical vapor deposition to deposit a tungsten layer only on the very surface of the stain. did.

タンクステン層の厚さは約200人であり、電極側面に
も一様に形成されている。このタングステンヲ被着した
試料は被着後、熱処理(400CX1h。
The tank sten layer has a thickness of approximately 200 mm and is uniformly formed on the side surfaces of the electrode. After the tungsten was deposited, the sample was heat-treated (400C x 1 h).

水素雰囲気)したものとしないものとを作製した。Two types were fabricated, one with and one without (hydrogen atmosphere).

熱処理したものでは、タングステンとアルミニウムとの
化合物層が形成されていた。このようにして準備した素
子を各々5ケずつ室温で6W大入力件において寿命を測
定した。結果を第1表に示す。
In the case of the heat-treated one, a compound layer of tungsten and aluminum was formed. The life of five of each of the devices thus prepared was measured at room temperature under a 6W high power input condition. The results are shown in Table 1.

表面酸化膜(〜50人)を形成したものでは、平均寿命
の向上は2倍程度だが、はとんど損失が増えない。タン
グステンを表面に被着したものでは、平均寿命が4〜5
倍に伸びるが損失も増える。これを熱処理するとこの傾
向が更に著しくなる。電極配置、厚さ等を最適化して損
失を減らす仁とは可能だが、平均寿命と損失との間の負
の相関関係は変らないと思われる。従って両者には兼ね
合いが必要である。
For those with a surface oxide film (up to 50 people), the average lifespan improves by about twice as much, but the loss hardly increases. For those with tungsten coated on the surface, the average lifespan is 4 to 5.
It will double, but the losses will also increase. When this is heat treated, this tendency becomes even more remarkable. Although it is possible to reduce loss by optimizing electrode placement, thickness, etc., it seems that the negative correlation between average life and loss will not change. Therefore, a balance must be struck between the two.

以上説明したように、アルミニウムまたはアルミニウム
・銅合金の表面に設けた層は、表面での原子移動を抑制
し、また表面からの原子の盛り土がシを押え込んでいる
と思われる。従って同様の作用を持つ物質なら、ここで
述べたものに限らない。
As explained above, the layer provided on the surface of aluminum or aluminum-copper alloy suppresses the movement of atoms on the surface, and it is thought that the mound of atoms from the surface suppresses the particles. Therefore, substances having similar effects are not limited to those described here.

また絶縁物なら電極間に存在しても短絡の心配はないが
、L ’ T aOs 表面へ応力を及ぼすため、損失
の増大、特性の変動を招く。従って出来る限り電極表面
にのみ絶縁層を形成するのが望ましい。
Furthermore, if an insulating material exists between the electrodes, there is no risk of short circuiting, but stress is exerted on the L' TaOs surface, leading to increased loss and fluctuations in characteristics. Therefore, it is desirable to form an insulating layer only on the electrode surface as much as possible.

第1表 種々の電極の寿命と損失 〔発明の効果〕 以上詳述したように、本発明によれば、表面弾性波素子
の高出力化、長寿命化を容易に達成することができる。
Table 1 Lifespan and loss of various electrodes [Effects of the invention] As detailed above, according to the present invention, it is possible to easily achieve higher output and longer life of a surface acoustic wave element.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の表面弾性波素子の配線部断面図、第2〜
4図は本発明の実施例になる表面弾性波素子の配線部断
面図である。 1・・・アルミニウム、またはアルミニウム・銅合金、
2・・・IjTaOs 基板、3・・・アルミニウム酸
化物、4・・・タングステン、5・・・ht−w化合物
、主に第 1 図 第 2 間 第3図 第4図
Figure 1 is a cross-sectional view of the wiring part of a conventional surface acoustic wave device, and Figure 2-
FIG. 4 is a sectional view of the wiring portion of a surface acoustic wave device according to an embodiment of the present invention. 1... Aluminum or aluminum/copper alloy,
2...IjTaOs substrate, 3...Aluminum oxide, 4...Tungsten, 5...ht-w compound, mainly between Fig. 1, Fig. 2, Fig. 3, Fig. 4

Claims (1)

【特許請求の範囲】[Claims] 電極の表面に電極材料と異なる、導電体、若しくは絶縁
体の層を設けた表面弾性波素子の電極。
An electrode for a surface acoustic wave device in which a conductor or insulator layer different from the electrode material is provided on the surface of the electrode.
JP59004812A 1984-01-17 1984-01-17 Surface acoustic wave device Expired - Lifetime JP2596534B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59004812A JP2596534B2 (en) 1984-01-17 1984-01-17 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59004812A JP2596534B2 (en) 1984-01-17 1984-01-17 Surface acoustic wave device

Publications (2)

Publication Number Publication Date
JPS60149214A true JPS60149214A (en) 1985-08-06
JP2596534B2 JP2596534B2 (en) 1997-04-02

Family

ID=11594152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59004812A Expired - Lifetime JP2596534B2 (en) 1984-01-17 1984-01-17 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP2596534B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394480A1 (en) * 1988-10-16 1990-10-31 YAMANOUCHI, Kazuhiko Structure of surface acoustic wave transducer having small electrode gaps and method of producing the same
WO2004105148A1 (en) * 2003-05-22 2004-12-02 Fujitsu Limited Piezoelectric device , its manufacturing method, and touch panel device
US6848153B2 (en) 1999-02-08 2005-02-01 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave device
JP2006041589A (en) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd Surface acoustic wave device and manufacturing method thereof
US7034435B2 (en) * 2001-06-22 2006-04-25 Oki Electric Industry Co., Ltd. Saw device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258341A (en) * 1975-11-10 1977-05-13 Toshiba Corp Surface wave filter
JPS5527758A (en) * 1978-08-21 1980-02-28 Toshiba Corp Manufacture of surface wave filter
JPS57115011A (en) * 1981-01-08 1982-07-17 Toshiba Corp Manufacture for surface acoustic wave element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258341A (en) * 1975-11-10 1977-05-13 Toshiba Corp Surface wave filter
JPS5527758A (en) * 1978-08-21 1980-02-28 Toshiba Corp Manufacture of surface wave filter
JPS57115011A (en) * 1981-01-08 1982-07-17 Toshiba Corp Manufacture for surface acoustic wave element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394480A1 (en) * 1988-10-16 1990-10-31 YAMANOUCHI, Kazuhiko Structure of surface acoustic wave transducer having small electrode gaps and method of producing the same
US6848153B2 (en) 1999-02-08 2005-02-01 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave device
US7034435B2 (en) * 2001-06-22 2006-04-25 Oki Electric Industry Co., Ltd. Saw device
WO2004105148A1 (en) * 2003-05-22 2004-12-02 Fujitsu Limited Piezoelectric device , its manufacturing method, and touch panel device
US7605523B2 (en) 2003-05-22 2009-10-20 Fujitsu Limited Piezoelectric device, its manufacturing method, and touch panel device
JP2006041589A (en) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd Surface acoustic wave device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2596534B2 (en) 1997-04-02

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