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JPS6457615A - Manufacture of thin film type semiconductor device - Google Patents

Manufacture of thin film type semiconductor device

Info

Publication number
JPS6457615A
JPS6457615A JP21301287A JP21301287A JPS6457615A JP S6457615 A JPS6457615 A JP S6457615A JP 21301287 A JP21301287 A JP 21301287A JP 21301287 A JP21301287 A JP 21301287A JP S6457615 A JPS6457615 A JP S6457615A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
amorphous semiconductor
crystallized
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21301287A
Other languages
Japanese (ja)
Inventor
Tadashi Serikawa
Seiichi Shirai
Akio Okamoto
Shiro Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP21301287A priority Critical patent/JPS6457615A/en
Publication of JPS6457615A publication Critical patent/JPS6457615A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To improve the semiconductor characteristics and enable a low cost with a high yield by a simple method, by forming an amorphous semiconductor thin film on an insulating substrate, and after crystallizing a partial region thereof, heat-treating the amorphous semiconductor thin film. CONSTITUTION:An amorphous semiconductor thin film 12a is formed on an insulating substrate 11, and after crystallizing a partial region of the amorphous semiconductor thin film 12a, said amorphous semiconductor thin film 12a is heat-treated. For example, the amorphous semiconductor thin film 12a is deposited on the insulating substrate 11 by a vacuum deposition method or the like, and then only the amorphous semiconductor thin film 12a in a predetermined position of the substrate 11 is crystallized thereby by using laser irradiation, electron beam irradiation, ultrared-ray irradiation, etc., to form a crystallized semiconductor thin film 12b. Then, when a heat treatment is performed at about 500 deg.C for 100hours, a crystallized semiconductor thin film 12c is formed centering the crystallized semiconductor thin film 12b. Thereafter, the crystallized semiconductor thin film 12c is processed to fabricate a thin film type semiconductor device.
JP21301287A 1987-08-28 1987-08-28 Manufacture of thin film type semiconductor device Pending JPS6457615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21301287A JPS6457615A (en) 1987-08-28 1987-08-28 Manufacture of thin film type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21301287A JPS6457615A (en) 1987-08-28 1987-08-28 Manufacture of thin film type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6457615A true JPS6457615A (en) 1989-03-03

Family

ID=16632036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21301287A Pending JPS6457615A (en) 1987-08-28 1987-08-28 Manufacture of thin film type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6457615A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01300513A (en) * 1988-05-28 1989-12-05 Kouenerugii Butsurigaku Kenkyu Shocho Formation of crystal growth nucleus or etching nucleus using photon
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
JP2008211204A (en) * 2008-02-12 2008-09-11 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS59148322A (en) * 1983-02-14 1984-08-25 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS59148322A (en) * 1983-02-14 1984-08-25 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01300513A (en) * 1988-05-28 1989-12-05 Kouenerugii Butsurigaku Kenkyu Shocho Formation of crystal growth nucleus or etching nucleus using photon
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
JP2008211204A (en) * 2008-02-12 2008-09-11 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor device

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