JPS6457615A - Manufacture of thin film type semiconductor device - Google Patents
Manufacture of thin film type semiconductor deviceInfo
- Publication number
- JPS6457615A JPS6457615A JP21301287A JP21301287A JPS6457615A JP S6457615 A JPS6457615 A JP S6457615A JP 21301287 A JP21301287 A JP 21301287A JP 21301287 A JP21301287 A JP 21301287A JP S6457615 A JPS6457615 A JP S6457615A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- amorphous semiconductor
- crystallized
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To improve the semiconductor characteristics and enable a low cost with a high yield by a simple method, by forming an amorphous semiconductor thin film on an insulating substrate, and after crystallizing a partial region thereof, heat-treating the amorphous semiconductor thin film. CONSTITUTION:An amorphous semiconductor thin film 12a is formed on an insulating substrate 11, and after crystallizing a partial region of the amorphous semiconductor thin film 12a, said amorphous semiconductor thin film 12a is heat-treated. For example, the amorphous semiconductor thin film 12a is deposited on the insulating substrate 11 by a vacuum deposition method or the like, and then only the amorphous semiconductor thin film 12a in a predetermined position of the substrate 11 is crystallized thereby by using laser irradiation, electron beam irradiation, ultrared-ray irradiation, etc., to form a crystallized semiconductor thin film 12b. Then, when a heat treatment is performed at about 500 deg.C for 100hours, a crystallized semiconductor thin film 12c is formed centering the crystallized semiconductor thin film 12b. Thereafter, the crystallized semiconductor thin film 12c is processed to fabricate a thin film type semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21301287A JPS6457615A (en) | 1987-08-28 | 1987-08-28 | Manufacture of thin film type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21301287A JPS6457615A (en) | 1987-08-28 | 1987-08-28 | Manufacture of thin film type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457615A true JPS6457615A (en) | 1989-03-03 |
Family
ID=16632036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21301287A Pending JPS6457615A (en) | 1987-08-28 | 1987-08-28 | Manufacture of thin film type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457615A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01300513A (en) * | 1988-05-28 | 1989-12-05 | Kouenerugii Butsurigaku Kenkyu Shocho | Formation of crystal growth nucleus or etching nucleus using photon |
US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
JP2008211204A (en) * | 2008-02-12 | 2008-09-11 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734331A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Manufacture of semiconductor device |
JPS59148322A (en) * | 1983-02-14 | 1984-08-25 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-28 JP JP21301287A patent/JPS6457615A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734331A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Manufacture of semiconductor device |
JPS59148322A (en) * | 1983-02-14 | 1984-08-25 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01300513A (en) * | 1988-05-28 | 1989-12-05 | Kouenerugii Butsurigaku Kenkyu Shocho | Formation of crystal growth nucleus or etching nucleus using photon |
US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
JP2008211204A (en) * | 2008-02-12 | 2008-09-11 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
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