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JPS6441267A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6441267A
JPS6441267A JP19620087A JP19620087A JPS6441267A JP S6441267 A JPS6441267 A JP S6441267A JP 19620087 A JP19620087 A JP 19620087A JP 19620087 A JP19620087 A JP 19620087A JP S6441267 A JPS6441267 A JP S6441267A
Authority
JP
Japan
Prior art keywords
electrode
diameter
emitter
connection hole
emitter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19620087A
Other languages
Japanese (ja)
Inventor
Nobuo Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19620087A priority Critical patent/JPS6441267A/en
Publication of JPS6441267A publication Critical patent/JPS6441267A/en
Pending legal-status Critical Current

Links

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the reliability of an electrode, by making the diameter of an aperture of a mask at the time of oxidizing a part of base electrode larger than the diameter of a connection hole on an emitter electrode. CONSTITUTION:The diameter L of an aperture of an insulating film 9 formed to expose a base electrode 7 is made sufficiently larger than the diameter lof a connection hole 15A on an emitter electrode 11, in offer that a vertical step difference of the electrode 11 which is formed later may be hid under an insulating film 14. Then, a silicide film 17 is formed on the whole surface of a part which is exposed from the connection hole 15A on the upper surface of the emitter electrode 11. Therefore, it does not occur that an aluminum wiring 18 diffuses into a polycrystalline silicon film forming the emitter electrode 11, and permeates into an emitter region 13, so that the junction between the emitter region 13 and an intrinsic base region 12 is not destructed.
JP19620087A 1987-08-07 1987-08-07 Semiconductor integrated circuit device Pending JPS6441267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19620087A JPS6441267A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19620087A JPS6441267A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6441267A true JPS6441267A (en) 1989-02-13

Family

ID=16353859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19620087A Pending JPS6441267A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6441267A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045912A (en) * 1989-04-21 1991-09-03 Nec Corporation Bi-CMOS integrated circuit device having a high speed lateral bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045912A (en) * 1989-04-21 1991-09-03 Nec Corporation Bi-CMOS integrated circuit device having a high speed lateral bipolar transistor

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