JPS6430220A - Alignment mark - Google Patents
Alignment markInfo
- Publication number
- JPS6430220A JPS6430220A JP62187190A JP18719087A JPS6430220A JP S6430220 A JPS6430220 A JP S6430220A JP 62187190 A JP62187190 A JP 62187190A JP 18719087 A JP18719087 A JP 18719087A JP S6430220 A JPS6430220 A JP S6430220A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mark
- metallic material
- sputtering process
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To give high alignment precision assuring the detection mark signal intensity even in case the mark is coated with thick resist by a method wherein the first film comprising a metallic material in larger atomic number than that of the element forming a semiconductor and the second film comprising the same metallic material as that of the first film but in the different structure on the first film are laminated on a semiconductor substrate. CONSTITUTION:A beta phase tungsten film 2 is formed on an Si substrate 1 by sputtering process. Then, an alpha phase tungsten film 3 is formed on the film 2 also by sputtering process. Next, a resist pattern 4 is formed by ordinary ultraviolet ray exposure using a positive type photoresist comprising diazo based novolak resin. Later, an alignment mark for electron beam exposure can be made by etching the tungsten films 3 and 2 using a reactive ion etching device as well as the resist pattern 4 as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187190A JPS6430220A (en) | 1987-07-27 | 1987-07-27 | Alignment mark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187190A JPS6430220A (en) | 1987-07-27 | 1987-07-27 | Alignment mark |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430220A true JPS6430220A (en) | 1989-02-01 |
Family
ID=16201681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62187190A Pending JPS6430220A (en) | 1987-07-27 | 1987-07-27 | Alignment mark |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430220A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183360A (en) * | 1993-12-22 | 1995-07-21 | Nec Corp | Reference mark for device calibration of electron beam exposure device and method for calibrating the device |
| US7449790B2 (en) | 2004-08-26 | 2008-11-11 | Hitachi Global Storage Technologies, Inc. | Methods and systems of enhancing stepper alignment signals and metrology alignment target signals |
| US8283792B1 (en) | 2004-08-26 | 2012-10-09 | Hitachi Global Storage Technologies, Netherlands B.V. | Methods and systems for forming an alignment mark with optically mismatched alignment mark stack materials |
-
1987
- 1987-07-27 JP JP62187190A patent/JPS6430220A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183360A (en) * | 1993-12-22 | 1995-07-21 | Nec Corp | Reference mark for device calibration of electron beam exposure device and method for calibrating the device |
| US7449790B2 (en) | 2004-08-26 | 2008-11-11 | Hitachi Global Storage Technologies, Inc. | Methods and systems of enhancing stepper alignment signals and metrology alignment target signals |
| US8283792B1 (en) | 2004-08-26 | 2012-10-09 | Hitachi Global Storage Technologies, Netherlands B.V. | Methods and systems for forming an alignment mark with optically mismatched alignment mark stack materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4098917A (en) | Method of providing a patterned metal layer on a substrate employing metal mask and ion milling | |
| US4088490A (en) | Single level masking process with two positive photoresist layers | |
| CA1071761A (en) | Method for making multilayer devices using only a single critical masking step | |
| CA1187203A (en) | Integrated circuit photomask | |
| US4504574A (en) | Method of forming a resist mask resistant to plasma etching | |
| FR2542882B1 (en) | X-RAY LITHOGRAPHY MASK AND MANUFACTURING METHOD THEREOF | |
| JPS561533A (en) | Method of photoetching | |
| JPS5851412B2 (en) | Microfabrication method for semiconductor devices | |
| US4101782A (en) | Process for making patterns in resist and for making ion absorption masks useful therewith | |
| US4344153A (en) | Magnetic bubble memory device and method of fabricating the same | |
| JPS6430220A (en) | Alignment mark | |
| US3816223A (en) | Fabrication mask using rare earth orthoferrites | |
| JPS54116883A (en) | Electron beam exposure method | |
| JPS57198632A (en) | Fine pattern formation | |
| JPS56116625A (en) | Exposure of fine pattern | |
| JPS56111221A (en) | Formation on mask for etching | |
| JPS5680130A (en) | Manufacture of semiconductor device | |
| Reichmanis | The chemistry of polymers for microlithographic applications | |
| JPH01185632A (en) | Mask for transfer and exposing transfer method using said mask for transfer | |
| JPS5748731A (en) | Manufacture of mask | |
| JPS58199525A (en) | Mask for x-ray | |
| JPS5568634A (en) | Manufacture of mask for x-ray exposure | |
| GB1583459A (en) | Masks their manufacture and the manufacture of microminiature solid-state devices using such masks | |
| JPS648622A (en) | Manufacture of semiconductor device | |
| JPS5452473A (en) | Forming method for coating for fine pattern |