Nothing Special   »   [go: up one dir, main page]

JPS5263637A - Device for non-volatile semiconductor memory - Google Patents

Device for non-volatile semiconductor memory

Info

Publication number
JPS5263637A
JPS5263637A JP50139590A JP13959075A JPS5263637A JP S5263637 A JPS5263637 A JP S5263637A JP 50139590 A JP50139590 A JP 50139590A JP 13959075 A JP13959075 A JP 13959075A JP S5263637 A JPS5263637 A JP S5263637A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
facilitate
screening
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50139590A
Other languages
Japanese (ja)
Other versions
JPS576199B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50139590A priority Critical patent/JPS5263637A/en
Publication of JPS5263637A publication Critical patent/JPS5263637A/en
Publication of JPS576199B2 publication Critical patent/JPS576199B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To facilitate detection of the electric charge of MOS memory transistor arranged in the form of matrix in order to facilitate the screening of its production and achieve the cost reduction and high reliability.
JP50139590A 1975-11-20 1975-11-20 Device for non-volatile semiconductor memory Granted JPS5263637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139590A JPS5263637A (en) 1975-11-20 1975-11-20 Device for non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139590A JPS5263637A (en) 1975-11-20 1975-11-20 Device for non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5263637A true JPS5263637A (en) 1977-05-26
JPS576199B2 JPS576199B2 (en) 1982-02-03

Family

ID=15248799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139590A Granted JPS5263637A (en) 1975-11-20 1975-11-20 Device for non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5263637A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method
JPS60111396A (en) * 1983-11-18 1985-06-17 Matsushita Electronics Corp Semiconductor memory device
JPS63302495A (en) * 1987-04-03 1988-12-09 Toshiba Corp Semiconductor memory device
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874757A (en) * 1971-12-30 1973-10-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874757A (en) * 1971-12-30 1973-10-08

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method
JPS6221199B2 (en) * 1979-11-15 1987-05-11 Nippon Tekisasu Insutsurumentsu Kk
JPS60111396A (en) * 1983-11-18 1985-06-17 Matsushita Electronics Corp Semiconductor memory device
JPS63302495A (en) * 1987-04-03 1988-12-09 Toshiba Corp Semiconductor memory device
JPH0427638B2 (en) * 1987-04-03 1992-05-12 Tokyo Shibaura Electric Co
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
JPS576199B2 (en) 1982-02-03

Similar Documents

Publication Publication Date Title
AU476893B2 (en) Semiconductor memory device and field-effect transistor suitable for use in the device
JPS5279679A (en) Semiconductor memory device
CA926031A (en) Semiconductor device with low impedance bond and process for its fabrication
JPS51114079A (en) Construction of semiconductor memory device
CA946524A (en) Electrically alterable floating gate device and method for altering same
CA924819A (en) Integrated semiconductor device
AU441498B2 (en) Semiconductor memory device
JPS5263637A (en) Device for non-volatile semiconductor memory
JPS5213782A (en) Semiconductor non-vol atile memory unit
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS51148385A (en) Semiconductor memory cell
GB1543971A (en) Dynamic type semiconductor memory device
JPS5292441A (en) Semiconductor memory unit
MY8100312A (en) Semiconductor memory device
JPS5278389A (en) Semiconductor memory device
CA945227A (en) Charge circuit for field effect transistor logic gate
JPS5235988A (en) Composite semiconductor device
JPS51123037A (en) Negative resistance generating device
JPS5225535A (en) Drive system of memory drive circuit
JPS51142932A (en) Semiconductor memory devices
JPS5294043A (en) Semiconductor memory circuit
AU452407B2 (en) Doped semiconductor electrodes for mos type devices
JPS53143186A (en) Production of semiconductor device
JPS51147133A (en) Non-voratile insulation gate semiconductor memory
JPS526036A (en) Semiconductor memory circuit