JPS59215694A - Thin film electroluminescent element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to the non-uniformity of R light brightness caused by local temperature rise due to heat generation accompanying light emission of the light emitting layer, instability of light emission, and 7. In order to prevent heat loss, a heat conductive layer is provided to prevent local temperature upper bounds. J related to electroluminescent devices. - Conventional matrix light emitting type thin II%j ] - Relev 1
~L1 luminescent element is TJ shown in FIG. 1 or FIG.
It has a different structure. That is, a Δbright electrode 4 (made of tin dioxide or I'1-0) is deposited on a transparent glass substrate 20 by sputtering or the like, and then a pattern is formed by hot 1-1 dipping to form a 1-dot structure of 71-lix. constitutes the il+ electrode. Thereafter, a first electrically insulating layer 6 made of yttrium oxide, germanium oxide, diammonium butanoate, or the like is formed by sputtering.

On top of that, a light emitting layer 8 is formed by injecting an activator such as mankan into a light emitting matrix such as Mi oxide & f1, and a second Electrical insulation I
r1110 is formed. On top of A, after the back electrode 12 made of aluminum C was vacuum-evaporated, a film A1-
A pattern is formed by 1st stitching, and a column control 11 electrode of 71 helices is formed. By applying an electric field to the column and rod electrodes in the 1-oluminescence lens of the mold, the light-emitting pixels existing in the heat exchanger part emit light. , the second electrically insulating layer applies a high electric field to the light emitting layer and has the effect of causing each pixel to emit light. , as the luminescent layer 1α of A increases, inevitably
- A phenomenon occurs in which the image quality of the light-emitting layer in the illuminated part increases locally. However, the -3 tW Ig distribution on the light emitting layer surface becomes non-uniform, resulting in uneven emission brightness, and the emission threshold voltage fluctuates with temperature, resulting in instability of light emission for each pixel. In fact, if only a specific pixel is used in such a way that it always emits light, the consumption of that specific pixel will always increase, deteriorating the brightness characteristics of that specific pixel, and shortening the lifespan of the entire element. There are drawbacks such as the fact that the decision is made at will.

Therefore, the present invention has been made to improve these drawbacks of the conventional technology.
- In the Rorminheins device, the temperature of the light-emitting layer is distributed uniformly on the light-emitting plane, and the purpose is to prevent unevenness in the light-emitting layer, to prevent light emission instability, and to equalize the pixel life. Zuru.

That is, the present defense provides an AV film-based luminaire comprising an element base plate, a light-emitting layer that emits light when an electric field is applied, and a pair of opposing electrode layers that apply an electric field to the light-emitting layer. The present invention relates to a thin film luminescence element characterized by having at least one heat conduction layer having excellent translucency, thermal conductivity, and electrical insulation properties.

This invention follows)! (The thin film of
iiJ is characterized by having at least one heat conductive layer that is translucent in both evening and night vision, electrically insulating, and thermally conductive. It is said that This heat transfer layer is formed using helium oxide (BeO) or die.Also, the position where the heat transfer layer is formed is A heat transfer layer formed on the inner end surface and bonded to at least 11 ends of the light emitting layer, or a heat transfer layer bonded to the light emitting layer and on the inner end surface of the element substrate, A layer is formed, and a transparent electrode is formed in a drip-like manner. Is it possible that the conventional electrical insulating layer, which electrically insulates the light emitting layer, cannot do the same job?

One movement of this heat transfer layer is to equalize the light emitting brightness of the light emitting layer (11is for 1i, Lt) over the entire light emitting layer. Ruri l-I
In the J luminescent element J3, the electrically insulating H layer and the metal electrode layer are thin, so that good thermal conductivity cannot be achieved. For this reason, a local temperature increase is observed in the light emitting pixel portion of the light emitting layer. This is alleviated by the heat transfer layer of the present invention.

In another preferred embodiment, the peripheral edge on one end surface of the heat transfer layer is exposed to the air, and a radiation fin is vertically joined to the peripheral edge. When the heat dissipation fins are provided in this way, the heat of the entire heat transfer layer can be efficiently radiated into the air by the heat dissipation fins, and the temperature-electric field of the heat transfer layer and therefore the entire element can be prevented. Therefore, even when light is emitted for a long period of time, the temperature rise of the entire light emitting layer can be suppressed, so that the stability of light emission brightness and the overall length of the device can be improved.

This will be explained below using examples.

FIG. 3 is a 4i+S cross-sectional view of a thin ELEC 1 luminescence element according to the first embodiment of the present invention.

A transparent glass substrate 2 was used as an element substrate, and a heat transfer layer 20 made of helium oxide (Bed) was formed on the substrate by sputtering to a thickness of 4 μm. Next, indium tin oxide (
After depositing 1'I O> by sputtering, )711
- Transparent electrode fI of 1" to control υ11 for 71-lix luminescence after being subjected to soil tinting treatment? I4 was formed. Furthermore, add 0.1~(Y2O2) to the soil.
The layer G was deposited to a thickness of 0.5 μm by high frequency sputtering to form a layer G on the first electrical insulation layer 1+. (On top of this, 0.00% of Mantonan was added as an activator by electron beam evaporation.
Contains 1% to 5% zinc chloride (ZII) as the parent material.
A gii optical layer 8 consisting of S) was formed to a thickness of 5,000 layers. -1!2, the first mentioned above? A second electrical insulating layer 10 consisting of layers 1 to 7 of the electrical insulating layer 11 was formed to a thickness of 1 to 1 .mu.m in the same manner as described above. Ishi (, evaporate nofluminium on it, 7
711~Etching process to form 11V electrode FV112 for column control of 71~Rix light/;
.

1000 for "Thin Film" Ref 1-11 Luminescence
It takes 10 mw/ to obtain a brightness of C(1/CIl+2)
It consumes power of about mm2. A part of this electric power becomes heat, and the temperature of the light-emitting pixel increases, causing the temperature molecules of the light-emitting layer to rise.
Let i be non-uniform. Therefore, the heat transfer l1vi of the present invention
20 is made of a transparent electrically insulating material with high thermal conductivity, and therefore acts to equalize the temperature distribution per 1 ton of local heat generation in the light emitting layer. The heat transfer LQ coefficient of beryllium oxide used in this example is 2,
IW 7cm-aag. This corresponds to about 30018 of the thermal conductivity of a sword. Therefore, 1°2mm
If a 4 μm thick beryllium oxide thin film is deposited on the glass cloud plate using a lifting platform made of a glass plate with a thickness of Compared to the case without 20, the culm in the heat spread 11 is more than twice as large.

Therefore, the concentration of heat on the light-emitting pixel is alleviated, and the light from the high-intensity J3 is stabilized. Therefore, it is important to prevent the uneven light emission that appears on the 71-ix panel.

In addition to the thin film forming method of this example,
Known techniques such as sputtering, electron beam evaporation, and Δn evaporation can be used. In addition, ZIISQ and the like can be used as the host material for the 'R luminescent layer, and known activators can be used as the activator. In addition, the ;fi IIJ insulating layer 2 may be made of other known transparent insulating layers such as barium titanate, M(10), etc.

Next, the second embodiment will be explained.

FIG. 4T is a partially cross-sectional 63rd view showing the 41.1 composition of the thin film electroluminescence according to the second embodiment. This example is shown in Figure 2! , :Conventional Densei Ruri] - [J Luminescence has a similar structure.

The difference here is that instead of the first electrically insulating layer 6 shown in FIG. 2, a conductive layer 20 of the invention is used. It is 1 no. The heat transfer layer 20 is formed to a thickness of 1 μm by contacting one end surface of the light emitting layer 8 on the substrate side, with the transparent electrode 4 interposed therein, and the groove 4a of the transparent electrode 4 Mediator
414 so as to be in contact with the C glass substrate 2. By doing this, the local temperature of the light-emitting layer 8 is distributed over the entire light-emitting layer (uniformly).The heat transfer layer 20 is transparent. , and because it has poor electrical insulation properties, it can be used as an alternative to conventional electrical insulation layers.

Furthermore, as a modification, the heat transfer layer 20 of the present invention may be formed instead of the second electrically insulating layer 10.

Next, a third embodiment of the present invention will be explained. FIG. 5 is a cross-sectional view showing the structure of the thin film electronics 1 to the loluminescence element according to the third embodiment of the present invention. The formation of the thin film layer is the same as in the first and second embodiments, so the explanation will be omitted. Members showing the same -I geometry are designated by the same numbers (=J and 'U). In the third embodiment, one end surface peripheral portion 208 of the heat transfer layer 20 is open to the air.

Radiation fins 30 are vertically joined to the peripheral edge 2Qa of C. The radiation fins 30 are made of a metal body.

By forming and covering the heat radiation fins in this way, the heat transfer layer 20
The uniform heat can be further radiated into the air through the radiation fins 30.

Therefore, it is possible to prevent the light emitting temperature of the entire light emitting layer 8 from rising, and by emitting light for a long period of 9.7 hours, the substrate idle time < M If
-L or upper? Also, changes in brightness caused by fluctuations in the 11f1 voltage during light emission are prevented. In this way, 111 light-emitting devices that are both affordable and commercially available can be produced.

As mentioned above, the example is 71-
Although the explanation has been made using a matrix-shaped model, it may also be a pigment-type model. In addition, a surface emitting type electrode (1-
Since the film thickness of S structure (Ah) is small, the same effect can be obtained by providing the heat transfer layer of the present invention.

4) The characteristics are thin film electronics 1 - 9 ℃, heat 1, good conductivity, excellent translucency, and electrical properties. [There are cases where a heat transfer layer with good insulation is installed.
1 can be relaxed to 4. Therefore, it is possible to equalize the brightness (11), stabilize the quantity (11) of the light, and equalize the life of each pixel. This has the effect that the life of the device as a whole becomes longer. Also, the b'l heat fin is also 9. () When emitting hot water into the air, L
;L % J'+-1- It is possible to prevent instability in the metal body.

[Brief explanation of the drawing]

FIGS. 1 and 2 are 414 diagrams showing the structure of a conventional thin film electronics 1 luminescence element. FIG. 3 is a cross-sectional view C' showing the structure of the thin film luminescent element 1 to U according to the first embodiment of the present invention. FIG. 4 is a perspective view showing the structure of a thin 11% 3 luctroluminescent element according to the second embodiment. It is a 4R cross-sectional view showing the structure. 2...Transparent glass substrate 4...Transparent electrode 6...First electrical insulating layer 8...Light emitting layer 10...Second electrical insulating layer 12. ... Back electrode layer 20 ... Heat transfer layer 30 ... Radiation fins Figure 1 Figure 2 Figure 3 Figure 4

Claims (5)

[Claims] (1) A thin-film electronic device 1 consisting of an element substrate, a light-emitting layer that emits light when an electric field is applied, and a pair of opposing electrode layers that apply an electric field to the light-emitting layer.
3. A thin film characterized by having at least one heat conductive layer with translucency, thermal conductivity, and electrical insulation properties. (2) The material constituting the heat transfer layer is beryllium oxide or diamond.
f Thin+15 according to claim 1314> Iref 1~
loluminescence element. (3) The L1 luminescence device according to claim 1, wherein the heat transfer layer is formed on an inner end surface of the device substrate. (4) The heat transfer layer includes at least one of the light emitting layers:
Feature '1' characterized by being formed to be bonded to the surface.
A thin film luminescence device according to claim 1. (5) The upper peripheral edge of one end surface of the heat transfer layer is open to the air, and a radiation fin is vertically joined to the peripheral edge.1! i. The thin film Luri 1-Lorluminescence Hatako as claimed in claim 1.