JPS5887829A - Polishing of si wafer - Google Patents
Polishing of si waferInfo
- Publication number
- JPS5887829A JPS5887829A JP18639581A JP18639581A JPS5887829A JP S5887829 A JPS5887829 A JP S5887829A JP 18639581 A JP18639581 A JP 18639581A JP 18639581 A JP18639581 A JP 18639581A JP S5887829 A JPS5887829 A JP S5887829A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- choline
- pulverized powder
- fine powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 31
- 229960001231 choline Drugs 0.000 claims abstract description 29
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 16
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 abstract description 15
- 238000011109 contamination Methods 0.000 abstract description 7
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000013043 chemical agent Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 31
- 238000005530 etching Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229940043379 ammonium hydroxide Drugs 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003248 quinolines Chemical group 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、Ｓｌウェーハ製造プロセスにおけるＳｉウェ
ーハの研摩方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method for polishing a Si wafer in a process for producing a Si wafer.
従来、Ｓｌウェーハは第１図に示すようなプロセスで製
造されている。すなわち、チヨクラスキー法（ｃｚ法）
や７０−ティングゾーン法（ＦＺ法）で形成されたＳｌ
のインゴットの外径を研削によシ愁え（工程１）、さら
にインゴット側面に決められた方位と幅を持つｒ’ｌｉ
＋ （オリエンテーションフラット）が現われるようイ
ンゴット側面を研削（工程２）する。次いで、インコゞ
ットを蝕刻（工程３）したのち、適当な厚さにスライシ
ング（工程４）してウェーハ素材を得る。Conventionally, Sl wafers have been manufactured by a process as shown in FIG. That is, the Czyoklasky method (cz method)
Sl formed by the 70-ting zone method (FZ method)
The outer diameter of the ingot is ground by grinding (process 1), and the r'li with a predetermined orientation and width is further added to the side surface of the ingot.
Grind the side surface of the ingot so that + (orientation flat) appears (Step 2). Next, the ingot is etched (step 3) and then sliced to an appropriate thickness (step 4) to obtain a wafer material.
このウェーハ累月の表面を洗浄（工程５）したのち、そ
の両面をラッピング（工程６）する。After cleaning the surface of this wafer (step 5), both surfaces thereof are lapped (step 6).
次に、ウェーハ素材のエツジを丸く削り（工程７）、続
いてウェーハ素拐を蝕刻（工程８）する。次に、ウェー
ハ累月の表ｒｈ＊をボ゛リジング（工程９，１０）した
のち、該表面を洗浄（工程１１）してＳｌウェーハが製
造される。かくして製造されたＳｉウェーハは所定の検
査がなされたのち出荷（工程１２）されることになる。Next, the edges of the wafer material are rounded (step 7), and then the wafer material is etched (step 8). Next, after boring the surface rh* of the wafer (steps 9 and 10), the surface is cleaned (step 11) to produce an Sl wafer. The Si wafer thus manufactured is subjected to a predetermined inspection and then shipped (step 12).
ところが、このようなＳｌウェーハの製造プロセスにあ
っては、上記工程９．］０において次のような問題があ
った。すなわち、工程９゜１０においては、通常Ｎａを
含有する無機アルカリと非晶質ＳｉＯ２微粉末との混合
物をボリシング材として用い、ウェハ素材表面のポリシ
ングが行われる。その際、工程９および工程１０では異
った量比で無機アルカリと非晶質Ｓ ｉＯ２が混合され
る。丑だ、工程９では無機アルカリと非晶質５ＩＯ２と
を用いてボリンングし、工程ＩＯではＣｕイオン全使用
した蝕刻を主とする仕上げを行う場合もある。いずれの
場合にあっても、半導体素子製作プロセスで最も低レベ
ルに抑えるべきＮａ 、Ｃｕ ’ｉｅ含有するボリシン
グ剤を用いているので、工程１１での洗浄は高度の技術
管理のもとに実行されなければならない。そして、この
洗浄が完全に行われない場合には、ウェーハ表面に残留
するＮａ 、 Ｃｕによって製作された素子の特性が損
なわれることになる。特に、ウェーハ裏面に微細な機械
加工損傷を与えるような場合には、この機械加工損傷に
Ｎａ 、 Ｃｕ等が多量に残存し、工程１１での洗浄で
もその除去が極めて困難であることが判明した。However, in the manufacturing process of such a Sl wafer, the above step 9. ]0 had the following problem. That is, in steps 9 and 10, the surface of the wafer material is polished using a mixture of an inorganic alkali containing Na and amorphous SiO2 fine powder as a polishing material. At this time, in step 9 and step 10, inorganic alkali and amorphous SiO2 are mixed in different quantitative ratios. In some cases, in step 9, boring is performed using an inorganic alkali and amorphous 5IO2, and in step IO, finishing is performed mainly by etching using all Cu ions. In either case, the cleaning in step 11 is carried out under a high level of technical control, since a borishing agent containing Na and Cu'ie, which should be kept at the lowest level in the semiconductor device manufacturing process, is used. There must be. If this cleaning is not performed completely, the characteristics of the fabricated device will be impaired due to Na and Cu remaining on the wafer surface. In particular, when fine machining damage is caused to the backside of the wafer, it has been found that large amounts of Na, Cu, etc. remain in the machining damage, and it is extremely difficult to remove it even with cleaning in step 11. .
本発明は上記事情を考慮してなされたもので、その目的
とするところは、Ｓｌウェーハの製造プロセスにおいて
Ｓｉウェーハを研摩するに際し、ＮａやＣｕ等による汚
染を未然に防ｌＩユすることができ、Ｓｌデバイスの製
造歩留シ向上に寄与し得るＳｌウェーハの研摩方法を提
供することにある。The present invention has been made in consideration of the above circumstances, and its purpose is to prevent contamination by Na, Cu, etc. when polishing a Si wafer in the process of manufacturing an Sl wafer. An object of the present invention is to provide a method for polishing an Sl wafer that can contribute to improving the manufacturing yield of Sl devices.
ます、本発明の詳細な説明する。本発明の骨子は、Ｓｉ
ウェーハを鏡面研厚仕」二げするためのポリシンダ材と
して、ＮａやＣｕ叫の金ｈ２元素を含有せず、Ｓｉを適
当量蝕刻する能力を持ち、ポリシング装置構成構造材を
腐蝕せず、かつ添加する非晶質Ｓ ｉｏ ２等の微粉末
を俗解しない薬品を用いるようにしたことである。Now, the present invention will be explained in detail. The gist of the present invention is that Si
As a polycinder material for mirror-polishing and polishing wafers, it does not contain any gold elements such as Na or Cu, has the ability to etch an appropriate amount of Si, does not corrode the structural materials of the polishing equipment, and The purpose is to use a chemical that is not commonly understood as a fine powder such as amorphous S io 2 to be added.
Ｓｔを蝕刻する浴液として汀、例えばＨＦ ＋ＨＮＯ，
混酸があるが、この混酸は金践構造材料を著しく浸す。As a bath solution for etching St, for example, HF + HNO,
There is a mixed acid, but this mixed acid significantly soaks the metal structure materials.
このｔｃめ、混酸全使用する場合、ポリシング装置構成
構造材料として有機物材料、或いはアルミナ等の耐酸性
セラミクス材料を選ぶ必要がある。しかし汗から、現在
要求されるような極端に精密なウェーハ精度を確保する
ためには、上記構造材料として機械加工および精密加工
が容易な金属材料、例えばステンレススチールを用いな
ければならず、上記耐酸性の点で矛盾を生じた。For this reason, when all mixed acids are used, it is necessary to select an organic material or an acid-resistant ceramic material such as alumina as the structural material for the polishing device. However, in order to ensure the extremely precise wafer precision currently required, metal materials that are easy to machine and precisely process, such as stainless steel, must be used as the structural material, and the acid-resistant There was a contradiction in terms of gender.
そこで本発明者等は有機強アルカリについて鋭意研究を
重ねた結果、コリン（Ｔｒｉ Ｍｅｔｈｙｌ−２−Ｈｙ
ｄｒｏｘｙｅｔｈｙｌ Ａｍｍｏｎｉｕｍ Ｈｙｄｒｏ
ｘｉｄｅ ：〔（ＣＨ３）６ＮＣＨ２ＣＨ２０Ｈ〕＋０
Ｈ−）が優れた特性を示すことを見出した。すなわち、
コリンはボリシング装置構造材料として用いられるステ
ンレススチール、ガラスセラミクス、有機材料等を浸す
ことなく、安定して使用し得る。さらに、研摩に必要な
特性も極めて良好なものであった。As a result of extensive research into strong organic alkalis, the present inventors discovered choline (Tri Methyl-2-Hy
Droxyethyl Ammonium Hydro
xide: [(CH3)6NCH2CH20H]+0
It has been found that H-) exhibits excellent properties. That is,
Choline can be used stably without soaking stainless steel, glass ceramics, organic materials, etc. used as structural materials of the borising device. Furthermore, the properties necessary for polishing were also extremely good.
本発明はこのような点に着目し、コリン水溶液に非晶質
Ｓ ｉＯ２等の微粉末を加えたポリシング剤を用いて、
Ｓｔ、ウェーハをポリシングするようにした方法である
。したがって、ＳｉウェーハがＮａやＣｕ等の金属によ
って汚染されることを未納に防止でき、前記した目的全
達成することができる。The present invention focuses on these points, and uses a polishing agent in which fine powder such as amorphous SiO2 is added to an aqueous choline solution.
St. This is a method for polishing a wafer. Therefore, undue contamination of the Si wafer with metals such as Na and Cu can be prevented, and all of the above objectives can be achieved.
以下、本発明の詳細を図面を参照して説明する。Hereinafter, details of the present invention will be explained with reference to the drawings.
第２図は有機強アルカリとしてのコリン、ＴＭＡＨ（Ｔ
ｅｔｒａ Ｍｅｔｈｙｌ Ａｍｍｏｎｉｕｍ Ｈｙｄｒ
ｏｘｉｄｅ ：〔（ＣＨ６）４Ｎ′３＋ＯＨ〕およびＴ
ＭＡ （Ｔｒｌ Ｍｅｔｈｙｌ Ａｍ１ｎｅ：［ＣＨ３
］５Ｎ ）の水浴液濃度と１１１１との関係を示す特性
図である。ここで、図中実線Ａはコリン、ＢはＴＭＡ
、 Ｃは’ＩＭＡＨの特性を示している。この図から同
じＰＨヲ得るためには、コリンの濃度はＴＭＡの約ｌ／
１０の濃度でよく、ＴＭＡ■■の約２５倍の濃度で十分
であることが判る。Figure 2 shows choline and TMAH (T) as strong organic alkalis.
etra Methyl Ammonium Hydro
oxide: [(CH6)4N'3+OH] and T
MA (Trl Methyl Am1ne:[CH3
]5N) is a characteristic diagram showing the relationship between the water bath solution concentration and 1111. Here, the solid line A in the figure is choline, and the solid line B is TMA.
, C indicates the characteristics of 'IMAH. From this figure, to obtain the same pH, the concentration of choline should be approximately 1/1 of TMA.
It can be seen that a concentration of about 25 times that of TMA is sufficient.
Ｓｉウェーハをポリシングするに際しては、使用ポリシ
ング材料中の不純物に起因するウェーハ表面汚染の問題
がある。このため、ＴＭＡＨ。When polishing Si wafers, there is a problem of wafer surface contamination due to impurities in the polishing material used. For this reason, TMAH.
ＴＭＡおよびコリンの純度レベルを低価格で高度化し得
ることか必要条件となる。本発明者等は、現在入手し得
る上記３者の５〔％〕水浴液の純度レベルについて、現
在最も信頼し得るフレームレス原子吸光分析法を用い、
松数回にわたって分析を行った。その結果、ＴＭＡＩ−
（およびＴＭＡでは重金属例えばＮａ 、 Ｆｅ 、
Ｚｎ 、 Ａｇが２０〜５０［ｐｐｂ〕検出されたのに
対し、コリンはいずれも１〜５ ［ｐｐｂ）以下であっ
た。すなわち、コリンはその使用に際し純度的に極めて
安定に使用し得ることが判明した。また、ＮａＯＨｙ
ＫＯＨＰＮａ ＣＯ３或いはＣ２Ｎ２０５Ｃｔ２Ｎａ
ｆ含有する薬剤よりもＮａの汚染が少ないことは明らか
である。さらに、Ｃｕ（ＮＯ３）２を使用するエツチン
グに比較し、Ｃｕの汚染が起こらないと云う特長がある
のも明らかである。It is a prerequisite that the purity level of TMA and choline can be improved at low cost. The present inventors used flameless atomic absorption spectrometry, which is currently the most reliable method, to determine the purity level of the currently available 5% water bath liquids of the above three types.
Matsu was analyzed several times. As a result, TMAI-
(and in TMA heavy metals such as Na, Fe,
Zn and Ag were detected at 20 to 50 [ppb], whereas choline was detected at 1 to 5 [ppb] or less. That is, it has been found that choline can be used with extremely stable purity. Also, NaOHy
KOHPNa CO3 or C2N205Ct2Na
It is clear that Na contamination is less than f-containing drugs. Furthermore, compared to etching using Cu(NO3)2, it is clear that it has the advantage of not causing Cu contamination.
次に、コリンのＳＬに対する蝕刻速度について説明する
。コリンおよびＮａＯＨ（１） Ｓｉに対する各蝕刻速
度は次の第１表に示す通υである。Next, the etching speed of choline with respect to SL will be explained. The etching speeds for choline and NaOH(1)Si are shown in Table 1 below.
第 １ 表
コリンのＳｔに対する蝕刻速度は、ＮａＯＨに比較しＮ
型、Ｐ型いずれとも大きく、かつその差は少ない。した
がって、現在ＭＯＳ型ＬＳＩに使用される（１００）Ｓ
ｉウェハに対しコリンが極めて有用である。−ま／ζ、
ポリシング中にはＳｔラウェ−表面温度が上昇するため
、蝕刻速度の温度に対する安定性が必要である。第３図
はコリン浴液に表面活性剤（商品名ＮＣＷ（ｉｏｌＡ
） ｌ ［％〕を添加した液に対し、蝕刻速度の温度依
存性を示す特性図である。ここで、図中曲ｆｆＭＣは１
．５［ｗｔ％］。Table 1 The etching rate of choline for St is compared to NaOH.
Both type and P type are large, and the difference between them is small. Therefore, the (100) S
Choline is extremely useful for i-wafers. -Ma/ζ,
During polishing, the temperature of the St substrate surface increases, so the etching rate must be stable with respect to temperature. Figure 3 shows a surfactant (trade name: NCW (iolA) added to the choline bath solution.
FIG. 2 is a characteristic diagram showing the temperature dependence of the etching rate for a solution to which 1% of the etching rate is added. Here, the song ffMC in the figure is 1
．． 5 [wt%].
Ｄは０．３［ｗｔ％〕のコリン浴液を示している。この
図から明らかなように５５〜６０〔℃〕以上の温度にお
いて、１５〔ｗｔ％〕のコリン浴液を用いたものは略一
定の蝕刻法１屁をイ」することが判明した。−まだ、各
種１度のコリン溶液に対する蝕刻速度は第４図に示す如
くなり、蝕刻速度に温度依存性があることが明らかとな
った。このため、温度および溶液濃度を変更することに
より、蝕刻速度を容易に）ｉｌＡＪ整＋−、イａると云
う特長がある。ｌた、コリンは極めて水に浴解し易いた
めに、純水にて洗浄することにより容易に取り除くこと
ができる。D indicates a 0.3 [wt%] choline bath solution. As is clear from this figure, it was found that at a temperature of 55 to 60 [°C] or higher, the etching process using a 15 [wt%] choline bath solution was approximately constant. -The etching rates for each type of 1 degree choline solution were as shown in FIG. 4, and it became clear that the etching rates were temperature dependent. Therefore, by changing the temperature and solution concentration, the etching speed can be easily adjusted. Furthermore, since choline is extremely easily dissolved in water, it can be easily removed by washing with pure water.
さて、実際のウェーハ鏡面研摩に際しては、コリンと微
粉末とを次のように混合してスラリーとなし使用する。Now, in actual wafer mirror polishing, choline and fine powder are mixed as follows to form a slurry and used.
すなわち、第１段階鏡面研摩工程用スラリーとしては下
記第２表に示す成分例１のものを、第２段階鏡面研摩工
程用スラリーとしては成分例２，３のものを用いる。That is, as the slurry for the first stage mirror polishing process, the composition of Example 1 shown in Table 2 below is used, and as the slurry for the second stage mirror polishing process, composition examples 2 and 3 are used.
第 ２ 表
上記した配合は、鏡面研摩にあたって使用する装置、研
摩・母ツド、圧力、温度、研摩パッド・ウェーハ相対速
度およびスラリー供給速度等によって最適値に選定保持
される必要がある。したがって、上記配合例はこれに限
定されるものではない。しかしながら、一般的には第１
段階において非晶質５ＩＯ２微粉末の童Ｆｉやや多く、
第２段階である仕上げ工程においては非晶質８１０２微
粉末の量は少なく、或いは全く使用しなくてもよい。Table 2 The above formulations need to be selected and maintained at optimal values depending on the equipment used for mirror polishing, the polishing base, pressure, temperature, relative speed of the polishing pad and wafer, slurry supply speed, etc. Therefore, the above formulation example is not limited to this. However, generally the first
At the stage, there is a little more amorphous 5IO2 fine powder,
In the finishing step, which is the second stage, the amount of amorphous 8102 fine powder may be small or may not be used at all.
成分例１および成分例２のスラリーヲ用いて両面鏡面研
摩装置により鏡面仕上はを行った。Using the slurries of Component Example 1 and Component Example 2, mirror finishing was performed using a double-sided mirror polishing device.
２６枚の１００［ｍφ］Ｓｉウェーハラッピング後３０
〔後爪０エツチングしたウェーハに対し、第１段階鏡面
研摩工程で約２０分、第２段階鏡面研摩工程で約５分の
研摩を行った。このとき、第１段階での除去量は約２５
〔μｍ〕、第２段階での除去ｉｉ： ＩＪ二約３〔μｍ
〕であった。さらに、ウェーハの反りは３〔μｍ〕、平
ｆ１１度はＥＰＤで１３〔μｍ〕の平均値を得た。30 after wrapping 26 100 [mφ] Si wafers
[The wafer that had been etched with no post-nails was polished for about 20 minutes in the first stage mirror polishing process and for about 5 minutes in the second stage mirror polishing process. At this time, the amount removed in the first stage is approximately 25
[μm], second stage removal ii: IJ2 approximately 3 [μm]
〕Met. Further, the average value of the wafer warpage was 3 [μm], and the flat f11 degree was 13 [μm] by EPD.
一方、片面鏡面研摩装置全使用した例では、第１段階で
の除去量は約１５〔μｍ〕、第２段階での除去量は約２
〔μｍ〕であった。除去量（片面についての除去量）が
両面鏡面研摩装置を使用した例より多いのは、研摩圧が
前者に対し約５倍と高かったためと考えらねる。ウェハ
の反りは４５〔μｍ〕、平坦度はＥＰＤで２０〔μｍ〕
の平均値金示した。On the other hand, in an example in which the entire single-sided mirror polishing device is used, the amount removed in the first stage is approximately 15 [μm], and the amount removed in the second stage is approximately 2 μm.
[μm]. The reason why the amount removed (the amount removed for one side) was greater than in the example using a double-sided mirror polishing device is probably because the polishing pressure was about 5 times higher than in the former case. Wafer warpage is 45 [μm], flatness is 20 [μm] by EPD
The average value of gold indicated.
上記２つの例で得たＳｔウエーノ・を洗浄処理したとこ
ろ、いずれの場合にあってもイオンビームマスクアナラ
イザを用いてもウェー７１表面のＮａ残存を検出するこ
とはできなかった。すなわち、８１ウエー・・研摩工程
におけるＮａ等の汚染を防止することができた。When the St wafers obtained in the two examples above were cleaned, it was not possible to detect Na remaining on the surface of the wafer 71 in either case even using an ion beam mask analyzer. That is, 81-way...contamination with Na, etc. during the polishing process could be prevented.
なお、上述した説明ではコリン水溶液に混合するものと
して非晶質Ｓ ｉ Ｏ２微粉末を用いたが、この代υに
はＮａやＣｕ等の金属元素を含まず、コリン水溶液に溶
解しない微粉末であれば用いてもよい。壕だ、コリン濃
度、微粉末添加量および温度等の条件は、仕様に応じて
適宜定めれはよい。さらに、前記表面活性剤は必すしも
使用しなくてもよい。１だ、研摩工程は必ずしも２段階
に分けて行う必要はなく、１回の工程で行うようにして
もよい。その他、本発明はその要旨を逸脱しない範囲で
、種々変形して実施することができる。In the above explanation, amorphous SiO2 fine powder was used as the material to be mixed with the choline aqueous solution, but this substitute υ may be a fine powder that does not contain metal elements such as Na or Cu and does not dissolve in the choline aqueous solution. You may use it if you have it. Conditions such as temperature, choline concentration, amount of fine powder added, temperature, etc. may be determined as appropriate according to specifications. Furthermore, the surfactants may not necessarily be used. 1. The polishing process does not necessarily need to be performed in two stages, and may be performed in one process. In addition, the present invention can be implemented with various modifications without departing from the gist thereof.
第１図は一般的なＳ１ウエーノ・製造ノロセスを示す作
業工程図、第２図乃至第４図はそれぞれ本発明の詳細な
説明するためのもので第２図はコリン、ＴＭＡＨオ、１
：ひＴＭＡ （７）水ｍ液濃ｒｍ−とＰｔｌとの関係を
示す特性図、第３図Ｃ：コリン水溶液の温度に対するＳ
ｔの蝕刻速度を示す特性図、第４図は温度をパラメータ
としたコリン水溶液の重量％に対するＳｔの蝕刻速ｊ此
を示す’ｌ’！を作図である。
出願入代］ｊ１１人 弁理士 鈴 江 武 彦□上Fig. 1 is a work process diagram showing a general S1 Ueno manufacturing process, and Figs. 2 to 4 are for explaining the present invention in detail, respectively.
: HTMA (7) Characteristic diagram showing the relationship between water concentration rm- and Ptl, Figure 3C: S vs. temperature of choline aqueous solution
A characteristic diagram showing the etching rate of t. Figure 4 shows the etching rate of St with respect to the weight percent of the choline aqueous solution with temperature as a parameter. is a drawing. Application fee] 11 patent attorneys Suzue Takehiko□Top
Claims (3)
コリン水溶液に微粉末を加えたボリシング剤を用いるこ
とを特徴とするＳｔウエーノ・の研摩方法。(1) When mirror polishing a Si wafer,
A method for polishing St. ueno, which is characterized by using a borishing agent prepared by adding fine powder to an aqueous choline solution.
であること全特徴とする特許請求の範囲第１項記載のＳ
ｔラウェ−の研摩方法。(2) The S according to claim 1, characterized in that the fine powder is made of amorphous SiO2.
How to polish t-lawe.
％〕、微粉末添加量を２ｏｏ（ｇ／、１以下に設定した
ことを特徴とする特許請求の範囲第１項記載のＳｉウェ
ーハの研摩方法。(3) Choline concentration ii of the polishing agent 0.2 to 10 [
%], and the amount of fine powder added is set to 2oo (g/, 1 or less).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18639581A JPS5887829A (en) | 1981-11-20 | 1981-11-20 | Polishing of si wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18639581A JPS5887829A (en) | 1981-11-20 | 1981-11-20 | Polishing of si wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5887829A true JPS5887829A (en) | 1983-05-25 |
Family
ID=16187643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18639581A Pending JPS5887829A (en) | 1981-11-20 | 1981-11-20 | Polishing of si wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887829A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10247202A1 (en) * | 2002-10-10 | 2003-10-30 | Wacker Siltronic Halbleitermat | Production of a boron-doped silicon wafer comprises cutting a boron-doped silicon crystal into wafers, mechanically shaping, wet chemical etching, and polishing by continuously introducing a silicic acid-containing aqueous polishing agent |
-
1981
- 1981-11-20 JP JP18639581A patent/JPS5887829A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10247202A1 (en) * | 2002-10-10 | 2003-10-30 | Wacker Siltronic Halbleitermat | Production of a boron-doped silicon wafer comprises cutting a boron-doped silicon crystal into wafers, mechanically shaping, wet chemical etching, and polishing by continuously introducing a silicic acid-containing aqueous polishing agent |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2592401B2 (en) | Composition and method for polishing and planarizing a surface | |
| Tuck | The chemical polishing of semiconductors | |
| Lee | Anisotropic etching of silicon | |
| JP2819196B2 (en) | Polishing compound and polishing method | |
| JP4113282B2 (en) | Polishing composition and edge polishing method using the same | |
| KR19980070026A (en) | Cleaning and Etching Compositions for Electronic Displays and Substrates | |
| KR20020016596A (en) | Polishing composition and polishing method employing it | |
| CN113186539B (en) | Post-chemical mechanical polishing cleaning solution and preparation method thereof | |
| JP2006222453A (en) | Silicon wafer, method for manufacturing the same, and soi wafer | |
| TW200411759A (en) | Process for etching silicon wafers | |
| US3615955A (en) | Method for polishing a silicon surface | |
| CN113201742B (en) | Application of post-chemical mechanical polishing cleaning solution | |
| JPH0429640B2 (en) | ||
| JP3066750B2 (en) | Manufacturing method of semiconductor wafer | |
| JPH11171693A (en) | Etching of silicon wafer and etching liquid for silicon wafer | |
| JP4167928B2 (en) | Polishing liquid for group III-V compound semiconductor wafer and method for polishing group III-V compound semiconductor wafer using the same | |
| US3738882A (en) | Method for polishing semiconductor gallium arsenide planar surfaces | |
| JP3686910B2 (en) | Etching method of silicon wafer | |
| US3775201A (en) | Method for polishing semiconductor gallium phosphide planar surfaces | |
| Mendel et al. | Polishing of silicon by the cupric ion process | |
| JP5216749B2 (en) | Processing method of silicon wafer | |
| JPS5887829A (en) | Polishing of si wafer | |
| CN113186540B (en) | Post-chemical mechanical polishing cleaning solution | |
| CN113544248B (en) | Semiconductor wafer cleaning liquid composition and cleaning method using the same | |
| US20020175143A1 (en) | Processes for polishing wafers |