JPS57197853A - Thin-film diode array - Google Patents
Thin-film diode arrayInfo
- Publication number
- JPS57197853A JPS57197853A JP56081019A JP8101981A JPS57197853A JP S57197853 A JPS57197853 A JP S57197853A JP 56081019 A JP56081019 A JP 56081019A JP 8101981 A JP8101981 A JP 8101981A JP S57197853 A JPS57197853 A JP S57197853A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- lower electrodes
- films
- semiconductor film
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To inhibit the deviation of diode characteristics due to the deformation of the end surface of a semiconductor film on a lower electrode after etching the semiconductor film, and to improve yield by coating the forming section of the end surface of the semiconductor film with a SiO2 film. CONSTITUTION:The SiO2 films 7 are formed to the upper surfaces and peripheral sections of a large number of the lower electrodes 2 for extracting signals shaped in parallel onto a glass substrate 1, and through-hole sections 7a with inside diameters smaller than the line width of the lower electrodes 2 are formed to one sections on the lower electrodes 2. N type amorphous silicon films 6c, I type amorphous silicon films 6b, P type amorphous silicon films 6a and upper electrodes 5 are successively laminated and arranged onto the through-holes 7a of the SiO2 films 7, and a blocking diode is formed. Accordingly, contact with the lower electrodes 2 due to the deformation of the shape of the end surfaces of each amorphous silicon film 6 is removed, and the yield of the diode array is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56081019A JPS57197853A (en) | 1981-05-29 | 1981-05-29 | Thin-film diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56081019A JPS57197853A (en) | 1981-05-29 | 1981-05-29 | Thin-film diode array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57197853A true JPS57197853A (en) | 1982-12-04 |
Family
ID=13734772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56081019A Pending JPS57197853A (en) | 1981-05-29 | 1981-05-29 | Thin-film diode array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57197853A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3503048A1 (en) * | 1984-02-01 | 1985-08-01 | Sharp K.K., Osaka | TWO DIMENSIONAL IMAGE READER |
| JPS60247965A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Solid-state image pickup element |
-
1981
- 1981-05-29 JP JP56081019A patent/JPS57197853A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3503048A1 (en) * | 1984-02-01 | 1985-08-01 | Sharp K.K., Osaka | TWO DIMENSIONAL IMAGE READER |
| JPS60247965A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Solid-state image pickup element |
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