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JPS57181376A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS57181376A
JPS57181376A JP6591581A JP6591581A JPS57181376A JP S57181376 A JPS57181376 A JP S57181376A JP 6591581 A JP6591581 A JP 6591581A JP 6591581 A JP6591581 A JP 6591581A JP S57181376 A JPS57181376 A JP S57181376A
Authority
JP
Japan
Prior art keywords
electrode
etching
matching box
electrodes
grounded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6591581A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6591581A priority Critical patent/JPS57181376A/en
Publication of JPS57181376A publication Critical patent/JPS57181376A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To prevent the formation of polymer films on electrodes and to improve the operating efficiency of a device by grounding a non-grounded upper electrode through a matching box, and generating a max. DC voltage in the sheath on the surface of the upper electrode.
CONSTITUTION: A gas such as C3F8 is introduced into an etching chamber 1 to generate plasma by electric discharge between the 1st electrode 2 in the upper part and the 2nd electrode 3 in the lower part, thereby etching the SiO2 film, etc. on the substrate (not shown) placed on the electrode 3. The electrodes 2, 3 are both mounted in the chamber 1 via insulators 6; the 1st electrode 2 is grounded through the 1st matching box 7 consisting of a variable conductor and a variable inductor, and a high frequency power source 5 is connected between the grounding terminal thereof and the 2nd electrode 3 via the 2nd matching box 4. The etching is accomplished by regulating the impedance of the box 7 in such a way that the potential at the electrode 2 is maximized.
COPYRIGHT: (C)1982,JPO&Japio
JP6591581A 1981-04-30 1981-04-30 Dry etching device Pending JPS57181376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6591581A JPS57181376A (en) 1981-04-30 1981-04-30 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6591581A JPS57181376A (en) 1981-04-30 1981-04-30 Dry etching device

Publications (1)

Publication Number Publication Date
JPS57181376A true JPS57181376A (en) 1982-11-08

Family

ID=13300739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6591581A Pending JPS57181376A (en) 1981-04-30 1981-04-30 Dry etching device

Country Status (1)

Country Link
JP (1) JPS57181376A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166028A (en) * 1985-01-17 1986-07-26 Anelva Corp Dry etching equipment
JPS61199077A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus
JPS61199078A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus
US5100504A (en) * 1988-07-29 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of cleaning silicon surface

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166028A (en) * 1985-01-17 1986-07-26 Anelva Corp Dry etching equipment
JPH0527967B2 (en) * 1985-01-17 1993-04-22 Anelva Corp
JPS61199077A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus
JPS61199078A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus
US5100504A (en) * 1988-07-29 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of cleaning silicon surface

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