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JPS5541959A - Production of indium oxide transparent conductive film through sputtering - Google Patents

Production of indium oxide transparent conductive film through sputtering

Info

Publication number
JPS5541959A
JPS5541959A JP11498878A JP11498878A JPS5541959A JP S5541959 A JPS5541959 A JP S5541959A JP 11498878 A JP11498878 A JP 11498878A JP 11498878 A JP11498878 A JP 11498878A JP S5541959 A JPS5541959 A JP S5541959A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive films
atmosphere
substrates
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11498878A
Other languages
Japanese (ja)
Other versions
JPS627265B2 (en
Inventor
Akihiro Kitahata
Tetsuya Date
Isao Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Shinku Kogyo KK
Original Assignee
Sanyo Shinku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Shinku Kogyo KK filed Critical Sanyo Shinku Kogyo KK
Priority to JP11498878A priority Critical patent/JPS5541959A/en
Publication of JPS5541959A publication Critical patent/JPS5541959A/en
Publication of JPS627265B2 publication Critical patent/JPS627265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE:To readily the large voluminously produce the large-size transparent conductive films of improved light transmittance by forming the semi-transparent conductive films of oxide indium to the substrates under the mixed gas atmosphere of inert gas and oxygen then subjecting the same to heat treatment in the atmosphere. CONSTITUTION:Indium-tin alloy is used as a target material 11 and the mixed gases of inert gas such as argon or other and oxygen are introduced in a vessel 2. A DC power source 13 is connected to the substrates being anode and the target 11 being cathode and current is supplied to let the seme-transparent conductive films composed primarily of indium oxide be formed on the substrates. There are then taken out into the atmosphere and are subjected to heat treatment for the specified time at above 300 deg.C. This treatment causes oxidation to progress and at the same time stabilizes the crystal structure and increases the light transmittance of the conductive films.
JP11498878A 1978-09-18 1978-09-18 Production of indium oxide transparent conductive film through sputtering Granted JPS5541959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11498878A JPS5541959A (en) 1978-09-18 1978-09-18 Production of indium oxide transparent conductive film through sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11498878A JPS5541959A (en) 1978-09-18 1978-09-18 Production of indium oxide transparent conductive film through sputtering

Publications (2)

Publication Number Publication Date
JPS5541959A true JPS5541959A (en) 1980-03-25
JPS627265B2 JPS627265B2 (en) 1987-02-16

Family

ID=14651550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11498878A Granted JPS5541959A (en) 1978-09-18 1978-09-18 Production of indium oxide transparent conductive film through sputtering

Country Status (1)

Country Link
JP (1) JPS5541959A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130303A (en) * 1981-02-03 1982-08-12 Sharp Kk Method of producing transparent conductive film
JPS57161727A (en) * 1981-03-30 1982-10-05 Ricoh Co Ltd Manufacture of electrochromatic film
FR2555613A1 (en) * 1983-11-30 1985-05-31 Ppg Industries Inc PROCESS FOR CATHODE SPRAYING ON A SUPPORT OF A LOW RESISTANCE INDIUM OXIDE FILM
EP0695815A1 (en) * 1994-08-04 1996-02-07 Leybold Aktiengesellschaft Method for coating a sheet with a transparent metal oxide layer
WO2008013238A1 (en) * 2006-07-28 2008-01-31 Ulvac, Inc. Method for forming transparent conductive film
JP2009501278A (en) * 2005-07-12 2009-01-15 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド Fixing tool used for coating work
WO2010044265A1 (en) * 2008-10-17 2010-04-22 株式会社アルバック Antireflective film formation method, antireflective film, and film formation device
JP2010133020A (en) * 2008-10-31 2010-06-17 Semiconductor Energy Lab Co Ltd Conductive oxynitride and method for manufacturing conductive oxynitride film
JP2011066070A (en) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd Polycrystalline thin film, deposition method of the same, and thin film transistor
RU2637044C2 (en) * 2016-04-15 2017-11-29 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Method of producing coating based on indium and tin oxide

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855267A (en) * 1971-11-13 1973-08-03
JPS5024173A (en) * 1973-07-06 1975-03-15
JPS5227165A (en) * 1975-08-21 1977-03-01 Paper Converting Machine Co Business form substack processor for making balanced stack

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4855267A (en) * 1971-11-13 1973-08-03
JPS5024173A (en) * 1973-07-06 1975-03-15
JPS5227165A (en) * 1975-08-21 1977-03-01 Paper Converting Machine Co Business form substack processor for making balanced stack

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130303A (en) * 1981-02-03 1982-08-12 Sharp Kk Method of producing transparent conductive film
JPS57161727A (en) * 1981-03-30 1982-10-05 Ricoh Co Ltd Manufacture of electrochromatic film
JPH0357457B2 (en) * 1981-03-30 1991-09-02 Rikoo Kk
FR2555613A1 (en) * 1983-11-30 1985-05-31 Ppg Industries Inc PROCESS FOR CATHODE SPRAYING ON A SUPPORT OF A LOW RESISTANCE INDIUM OXIDE FILM
EP0695815A1 (en) * 1994-08-04 1996-02-07 Leybold Aktiengesellschaft Method for coating a sheet with a transparent metal oxide layer
JP2009501278A (en) * 2005-07-12 2009-01-15 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド Fixing tool used for coating work
WO2008013238A1 (en) * 2006-07-28 2008-01-31 Ulvac, Inc. Method for forming transparent conductive film
WO2010044265A1 (en) * 2008-10-17 2010-04-22 株式会社アルバック Antireflective film formation method, antireflective film, and film formation device
JP2010133020A (en) * 2008-10-31 2010-06-17 Semiconductor Energy Lab Co Ltd Conductive oxynitride and method for manufacturing conductive oxynitride film
JP2011066070A (en) * 2009-09-15 2011-03-31 Idemitsu Kosan Co Ltd Polycrystalline thin film, deposition method of the same, and thin film transistor
RU2637044C2 (en) * 2016-04-15 2017-11-29 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Method of producing coating based on indium and tin oxide

Also Published As

Publication number Publication date
JPS627265B2 (en) 1987-02-16

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