JPH1186340A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH1186340A JPH1186340A JP9236945A JP23694597A JPH1186340A JP H1186340 A JPH1186340 A JP H1186340A JP 9236945 A JP9236945 A JP 9236945A JP 23694597 A JP23694597 A JP 23694597A JP H1186340 A JPH1186340 A JP H1186340A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- refractive index
- dielectric layer
- transparent dielectric
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は情報記録に用いられる光
記録媒体に存し、特に高記録感度の光記録媒体に存す
る。The present invention relates to an optical recording medium used for recording information, and more particularly to an optical recording medium having high recording sensitivity.
【0002】[0002]
【従来の技術とその課題】光記録媒体は、高密度、低コ
ストの情報記録媒体として実用化されている。例えば音
楽用途のCD(コンパクトディスク)、映像用途のLD
(レーザーディスク)あるいはデータ記録用の光磁気デ
ィスク、相変化ディスク等の、いわゆる光ディスクが知
られている。情報の記録再生は、基板に設けられた凹凸
ピットによる反射率変化、あるいは記録膜の結晶化とア
モルファス化による反射率変化、あるいは磁性体の磁化
方向による直線偏光の回転により行われる。2. Description of the Related Art Optical recording media have been put to practical use as high-density, low-cost information recording media. For example, CD (compact disk) for music, LD for video
So-called optical disks such as (laser disks), magneto-optical disks for data recording, and phase change disks are known. Recording and reproduction of information are performed by a change in reflectivity due to uneven pits provided on the substrate, a change in reflectivity due to crystallization and amorphization of the recording film, or a rotation of linearly polarized light due to a magnetization direction of a magnetic material.
【0003】これらの媒体においては、表面の埃ないし
傷の影響を小さくするために、透明基板を用いて光を基
板側から入射し、情報の記録/再生を行なうのが通常で
ある。この様な構成をとった場合、基板の光入射面上で
はビームスポットが直径数mm程度あるので、基板表面
に多少の埃ないし傷が存在した場合でもビーム全体への
影響が小さいのである。この基板の厚みは例えばCD等
では1.2mmのものが用いられている。基板の材質に
は安価でかつ射出成形法により高速に作成できる透明樹
脂基板が殆どの場合用いられる。特に安価で特性バラン
スの優れたポリカーボネートが多く用いられている。こ
ういった樹脂基板においてはその屈折率は1.5〜1.
6程度であり、空気と基板との界面において約5%の基
板表面反射光(以下、「Rs」と言うことがある。)を
生じる。尚、Rsはおよそ、[0003] In these media, in order to reduce the influence of dust or scratches on the surface, it is usual to use a transparent substrate to impinge light from the substrate side to record / reproduce information. In such a configuration, the beam spot has a diameter of about several mm on the light incident surface of the substrate, so that even if there is some dust or flaw on the substrate surface, the influence on the entire beam is small. The thickness of this substrate is, for example, 1.2 mm for a CD or the like. As the material of the substrate, a transparent resin substrate which is inexpensive and can be formed at a high speed by an injection molding method is used in most cases. Particularly, polycarbonates which are inexpensive and have excellent property balance are often used. The refractive index of such a resin substrate is 1.5 to 1.
This is about 6, and about 5% of the substrate surface reflected light (hereinafter, may be referred to as “Rs”) is generated at the interface between the air and the substrate. Note that Rs is approximately
【0004】[0004]
【数1】Rs=(ns−1)2 /(ns+1)2 Rs = (ns−1) 2 / (ns + 1) 2
【0005】で表される。ここでnsは基板の屈折率で
ある。Rsはせいぜい5%程度であるので従来信号の記
録再生には大きな影響を及ぼさないと思われてきた。し
かし、近年の光ディスクの大容量化に伴い、再生信号品
質への要求が非常に厳しくなり、従来は問題とならなか
った微小なレベルの信号の乱れが再生時のエラーへ結び
つく様になってきている。本発明者はこのようなエラー
の原因を解析し、原因の一つに基板表面の凹凸に伴う光
偏光面の乱れがあることを突き止めた。例えば光磁気デ
ィスクでは光偏光面の回転方向により信号再生を行う
が、基板表面に凹凸があると、Rsの偏光面が乱されて
しまう。この信号の乱れは実際には信号の低周波のうね
りとして観察される。このうねりが大きくなれば再生の
誤りを生じるのであった。[0005] Here, ns is the refractive index of the substrate. Since Rs is at most about 5%, it has been considered that it does not greatly affect the recording and reproduction of the conventional signal. However, with the recent increase in the capacity of optical discs, the demand for reproduction signal quality has become extremely strict, and small-level signal disturbances, which were not a problem in the past, have led to errors during reproduction. I have. The present inventor has analyzed the cause of such an error, and has found that one of the causes is disturbance of the light polarization plane due to unevenness of the substrate surface. For example, in the case of a magneto-optical disk, signal reproduction is performed according to the rotation direction of the light polarization plane. However, if the substrate surface has irregularities, the polarization plane of Rs is disturbed. This signal disturbance is actually observed as a low-frequency undulation of the signal. If this undulation becomes large, a reproduction error occurs.
【0006】従来基板の光入射面には紫外線硬化樹脂等
による有機物あるいは酸化Si等による無機物によるハ
ードコートがなされ、表面に傷が入るのを防止するとい
う提案がなされていた。しかるにこういった有機コーテ
ィングないし無機コーティングでは成形等の時点で発生
するコーティング前に生じた凹凸による影響は取り除け
なかった。Conventionally, it has been proposed that a light incident surface of a substrate is hard-coated with an organic substance such as an ultraviolet curable resin or an inorganic substance such as Si oxide to prevent the surface from being damaged. However, such an organic coating or inorganic coating could not remove the influence of unevenness generated before coating which occurred at the time of molding or the like.
【0007】さらには、Rsは何等信号を含まない成分
であるので、光検出器に入ってもノイズを発生させるの
みであり、信号のSN比を低下させる要因となっている
ことも突き止めた。従来のハードコートは屈折率が1.
5〜1.6程度あるため表面反射の影響はハードコート
を行わない場合に対して殆ど変わらなかった。理論的に
は屈折率が1.3程度の均一なコートを施した場合、R
sを低下させることが可能である。しかし、一般に強固
な固体膜層の屈折率は高く、このような低屈折率とハー
ドコートとしての機能の両方を満たすことはできなかっ
た。Further, it has been found out that Rs is a component that does not contain any signal, so that even if it enters the photodetector, it only generates noise, which is a factor that lowers the SN ratio of the signal. The conventional hard coat has a refractive index of 1.
Since there is about 5 to 1.6, the influence of surface reflection was almost the same as when no hard coat was performed. In theory, when a uniform coat having a refractive index of about 1.3 is applied, R
It is possible to reduce s. However, generally, a solid solid film layer has a high refractive index, and cannot satisfy both such a low refractive index and a function as a hard coat.
【0008】[0008]
【課題を解決するための手段】本発明者は上述の問題点
を解決するため鋭意検討した結果、基板の光入射面に透
明誘電体層を設けた光記録媒体において、この透明誘電
体層における屈折率が基板から離れるほど小さくなる、
例えば具体的には、基板に屈折率の異なる複数の透明誘
電体層を設けることにより、容易にRsが低減可能であ
ることを見出し、本発明を完成させた。本発明によっ
て、基板凹凸の影響が小さく、しかもSN比の高い、か
つ透明誘電体層が基板の傷を防ぐハードコートとしての
機能を十分に持った光記録媒体を提供することができ
る。The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, in an optical recording medium having a transparent dielectric layer provided on a light incident surface of a substrate, the optical recording medium has a transparent dielectric layer. The refractive index decreases as the distance from the substrate increases,
For example, specifically, it has been found that Rs can be easily reduced by providing a substrate with a plurality of transparent dielectric layers having different refractive indexes, and the present invention has been completed. According to the present invention, it is possible to provide an optical recording medium in which the influence of substrate irregularities is small, the SN ratio is high, and the transparent dielectric layer has a sufficient function as a hard coat for preventing damage to the substrate.
【0009】本発明を用いることにより、基板表面から
の反射を著しく低減でき、この結果基板表面の凹凸によ
る信号の乱れを抑制できる。また、表面反射光によるノ
イズの発生が小さくなるため、SN比も向上する。これ
らの結果、低エラーレートの記録媒体を得ることができ
る。しかも生産性も十分に高い。Rsを低減することの
今一つの効果は記録感度の向上である。すなわち、記録
可能な光記録媒体において、従来Rsにより記録光の一
部が熱に変わらず記録感度を低下させていたが、本発明
ではRsが低下するので高い記録感度が得られる。By using the present invention, reflection from the substrate surface can be significantly reduced, and as a result, signal disturbance due to unevenness on the substrate surface can be suppressed. Further, since the generation of noise due to the surface reflected light is reduced, the SN ratio is also improved. As a result, a recording medium with a low error rate can be obtained. Moreover, productivity is sufficiently high. Another effect of reducing Rs is to improve recording sensitivity. That is, in a recordable optical recording medium, a part of the recording light is conventionally reduced by Rs to reduce the recording sensitivity without being changed by heat. However, in the present invention, a high recording sensitivity is obtained because Rs is reduced.
【0010】[0010]
【発明の実施の態様】本発明に用いられる光記録媒体の
基板は透明な基板であることが必要である。好ましくは
ポリカーボネート樹脂、ポリメチルメタクリルレート樹
脂、及びオレフィン系樹脂等の透明樹脂基板が用いら
れ、吸湿性、コストが比較的低いことから特にポリカー
ボネート樹脂基板が好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The substrate of the optical recording medium used in the present invention must be a transparent substrate. Preferably, a transparent resin substrate such as a polycarbonate resin, a polymethyl methacrylate resin, and an olefin resin is used. A polycarbonate resin substrate is particularly preferable because of its relatively low hygroscopicity and low cost.
【0011】基板には、その片面に記録層として凹凸ピ
ット、有機色素層、相変化材料や光磁気材料等を含む記
録層が設けられ、情報の記録/再生がなされる。本発明
では記録層が設けられる側とは反対側、すなわち基板の
光入射面に透明誘電体層を設ける。Rsを低く抑えるた
めに、誘電体の最も外側(すなわち基板から一番遠い層
部分)では屈折率が最も低く、基板に近づくにつれ、屈
折率が高くなるように構成する。この構成により、これ
らの透明誘電体層はいわゆる反射防止膜を兼ねることと
なり、Rsを非常に小さくなすことができる。通常の媒
体においては、樹脂の屈折率差のため約5%程度のRs
が存在するが、本発明の構成ではこの値を、例えば1%
以下にまで大きく低下させることが可能となる。The substrate is provided on one surface thereof with recording / reproducing pits, an organic dye layer, a recording layer containing a phase-change material, a magneto-optical material and the like as a recording layer, for recording / reproducing information. In the present invention, the transparent dielectric layer is provided on the side opposite to the side on which the recording layer is provided, that is, on the light incident surface of the substrate. In order to keep Rs low, the refractive index is the lowest on the outermost side of the dielectric (that is, the layer portion farthest from the substrate), and the refractive index increases as approaching the substrate. With this configuration, these transparent dielectric layers also serve as so-called antireflection films, and Rs can be made extremely small. In a normal medium, Rs of about 5% is obtained due to the difference in the refractive index of the resin.
However, in the configuration of the present invention, this value is, for example, 1%
It can be greatly reduced to the following.
【0012】本発明の好ましい形態は、光記録媒体の作
製工程上、各々が異なる屈折率を持った複数の透明誘電
体層を積層することである。例を図1、2に示す。複数
の透明誘電体層としては異なる物質を用いることもでき
るし、同一の物質で異なる屈折率を持つ誘電体を用いて
も良い。同一の物質で異なる屈折率を得るには、例えば
反応性スパッタリングにおいて、成膜圧力や反応性ガス
の分圧、スパッタリングパワー等を変化させることによ
り容易に達成できる。In a preferred embodiment of the present invention, a plurality of transparent dielectric layers, each having a different refractive index, are laminated in the process of manufacturing an optical recording medium. Examples are shown in FIGS. Different materials can be used for the plurality of transparent dielectric layers, or dielectrics having the same material and different refractive indices can be used. Obtaining a different refractive index with the same substance can be easily achieved, for example, by changing the film forming pressure, the partial pressure of the reactive gas, the sputtering power, and the like in reactive sputtering.
【0013】透明誘電体層を構成する層の数は任意であ
るが、作製工程上の簡便さから2層であることが好まし
い。この場合、最も外側(一番、基板から遠い層)に用
いる層(第1誘電体層)としては、屈折率が比較的低い
ことが条件であり、窒化シリコン、酸化シリコン、Zn
O、フッ化マグネシウム、酸化アルミ等が好ましく用い
られる。特に膜が丈夫で、表面の耐傷効果も高い窒化シ
リコン、酸化シリコン、酸化アルミが好ましい。第1誘
電体層としては屈折率nが1.4〜2.0が好ましい。
屈折率の低すぎるものだとハードコートとしての役割を
果たさない。あまりに高い屈折率だと反射率低減効果が
小さくなる。Although the number of layers constituting the transparent dielectric layer is arbitrary, it is preferable that the number be two in order to simplify the manufacturing process. In this case, the layer (first dielectric layer) used as the outermost layer (the layer farthest from the substrate) has a condition that the refractive index is relatively low, and silicon nitride, silicon oxide, Zn
O, magnesium fluoride, aluminum oxide and the like are preferably used. In particular, silicon nitride, silicon oxide, and aluminum oxide, which have a strong film and high scratch resistance on the surface, are preferable. The refractive index n of the first dielectric layer is preferably from 1.4 to 2.0.
If the refractive index is too low, it will not serve as a hard coat. If the refractive index is too high, the effect of reducing the reflectance is reduced.
【0014】Rsを低下させる上で第1誘電体層の膜厚
は、特に重要である。第1誘電体層の膜厚はその内側の
透明誘電体層(第2誘電体層)との界面で反射した光が
第1誘電体層の表面で反射した光と打ち消し合う様に、
入射光の波長(空気中)をλとして、ほぼλ/4n程度
であることが好ましい。十分な反射率低減効果が得られ
る範囲はλ/7n〜λ/3nである。特に好ましくはλ
/6〜λ/3.5である。The thickness of the first dielectric layer is particularly important for reducing Rs. The thickness of the first dielectric layer is set such that light reflected at the interface with the transparent dielectric layer (second dielectric layer) inside the first dielectric layer cancels light reflected at the surface of the first dielectric layer.
Assuming that the wavelength of the incident light (in the air) is λ, it is preferable that the wavelength is approximately λ / 4n. The range in which a sufficient reflectance reduction effect can be obtained is λ / 7n to λ / 3n. Particularly preferably λ
/ 6 to λ / 3.5.
【0015】第1誘電体層よりも基板側に用いる第2誘
電体等の透明誘電体層は、比較的高屈折率の透明誘電体
であり、具体的には窒化シリコン、酸化タンタル、窒化
アルミニウム、酸化タンタル、酸化チタン、酸化シリコ
ン、ZnS、ZnSe、ZnO等が挙げられる。中で
も、透明な高屈折率膜が容易に得られる窒化シリコン、
酸化タンタル、ZnS等が好ましい。屈折率は第1誘電
体層よりも大きく、1.6〜2.4が好ましい。膜厚は
後述する膜応力、表面硬度等の特性から任意に膜厚を選
定することが可能である。特にRsを低下させることが
必要である場合には、入射光波長λに対して、λ/2〜
λ/7であることが好ましい。。The transparent dielectric layer such as a second dielectric used on the substrate side with respect to the first dielectric layer is a transparent dielectric having a relatively high refractive index, specifically, silicon nitride, tantalum oxide, aluminum nitride. , Tantalum oxide, titanium oxide, silicon oxide, ZnS, ZnSe, ZnO and the like. Among them, silicon nitride, from which a transparent high refractive index film can be easily obtained,
Tantalum oxide, ZnS and the like are preferred. The refractive index is larger than that of the first dielectric layer, and is preferably 1.6 to 2.4. The film thickness can be arbitrarily selected from characteristics such as film stress and surface hardness described later. In particular, when it is necessary to reduce Rs, λ / 2 to λ / 2 of the incident light wavelength λ is required.
It is preferably λ / 7. .
【0016】本発明の効果が十分得られるにはRsは5
%以下であることが好ましく、さらに好ましくは4%以
下、特に好ましくは3%以下である。本発明においてこ
の透明誘電体層の膜厚は、光記録媒体を構成する他の要
件にもよるが通常、100〜300nm、中でも150
〜250nm、特に160〜230nmとするのが好ま
しい。In order to sufficiently obtain the effect of the present invention, Rs is 5
%, More preferably 4% or less, particularly preferably 3% or less. In the present invention, the thickness of the transparent dielectric layer is usually from 100 to 300 nm, especially from 150 to 300 nm, though it depends on other requirements constituting the optical recording medium.
250250 nm, particularly preferably 160-230 nm.
【0017】例えば本発明の構成では入射光波長λが6
50nmの際には、例えば第1誘電体層の屈折率1.5
(酸化シリコン)、第2誘電体層の屈折率が2.0(窒
化シリコン)であった場合にRsが最小になる膜厚は、
第1誘電体層が90nm、第2誘電体層が100nmの
場合であり、このときRsは1%以下になる。Rsを落
とす膜厚のマージンを上げるために各層の屈折率の差は
0.1以上であることが好ましい。さらに好ましくは
0.2以上、特に好ましくは0.3以上である。For example, in the configuration of the present invention, the incident light wavelength λ is 6
In the case of 50 nm, for example, the refractive index of the first dielectric layer is 1.5.
(Silicon oxide), the film thickness at which Rs is minimum when the refractive index of the second dielectric layer is 2.0 (silicon nitride) is
This is the case where the first dielectric layer is 90 nm and the second dielectric layer is 100 nm. At this time, Rs is 1% or less. It is preferable that the difference in the refractive index of each layer is 0.1 or more in order to increase the margin of the film thickness for reducing Rs. It is more preferably at least 0.2, particularly preferably at least 0.3.
【0018】先述の様に、本発明における透明誘電体層
は高い耐傷性を持つので、従来技術におけるハードコー
トと同等の効果もある。ハードコートとしては固く、し
かもRsが小さいというものが好ましいが、一般に固い
物質では屈折率が比較的高く、結果としてRsが高くな
ってしまう。低屈折率の無機コート、例えば屈折率1.
5の酸化シリコン単独のコートでは、かなり固いと言え
ども、固さが未だ不十分であった。一方固い膜、例えば
窒化シリコン等では膜の屈折率が高いため、基板表面の
反射率Rsが高くなりすぎるという問題があった。これ
に対し本発明の誘電体では窒化物等の固い誘電体を用い
ることができ、しかも反射率が非常に低くなるため、記
録再生特性を損なうことなく、耐傷性を著しく向上可能
である。As described above, since the transparent dielectric layer of the present invention has high scratch resistance, it has the same effect as the hard coat of the prior art. It is preferable that the hard coat is hard and that Rs is small. However, in general, a hard substance has a relatively high refractive index, resulting in a high Rs. Low refractive index inorganic coat, for example, refractive index 1.
The coat of silicon oxide 5 alone was fairly hard, but the hardness was still insufficient. On the other hand, a hard film such as silicon nitride has a problem that the reflectance Rs of the substrate surface becomes too high because the film has a high refractive index. On the other hand, in the dielectric of the present invention, a hard dielectric such as a nitride can be used, and the reflectance is very low, so that the scratch resistance can be significantly improved without impairing the recording / reproducing characteristics.
【0019】さらに高屈折率の膜は比較的高い応力を持
つため、記録膜の応力を打ち消し、基板を平坦に保つ効
果も持っている。こういう構成をとることにより、初期
変形及び温度、湿度による基板の変形を抑制することが
できる。基板は基板厚みが薄くなるに従って剛性が著し
く低下して反り易くなるため、基板平坦化の効果は基板
厚みが薄い程顕著である。本発明においては、特に基板
厚み0.8mm以下の光記録媒体に用いるのが効果が顕
著となるので好ましい。酸化シリコン等の低屈折率の層
単独においても、層の膜厚を非常に厚くすれば基板を平
坦化することが可能であるが、生産性が著しく低下して
しまう。一方、窒化シリコンのような比較的高応力の層
であれば、層の膜厚を薄くすることが可能であるが、こ
のような層では屈折率が高いため、Rsが高くなり記録
再生特性に悪影響を与える。Further, since the film having a high refractive index has a relatively high stress, it has an effect of canceling out the stress of the recording film and keeping the substrate flat. With such a configuration, it is possible to suppress initial deformation and deformation of the substrate due to temperature and humidity. The rigidity of the substrate is significantly reduced as the thickness of the substrate is reduced, and the substrate is easily warped. Therefore, the effect of flattening the substrate is more remarkable as the thickness of the substrate is reduced. In the present invention, it is particularly preferable to use an optical recording medium having a substrate thickness of 0.8 mm or less because the effect becomes remarkable. Even if a layer having a low refractive index such as silicon oxide alone is used, the substrate can be flattened if the thickness of the layer is extremely large, but productivity is significantly reduced. On the other hand, if the layer has a relatively high stress such as silicon nitride, it is possible to reduce the thickness of the layer. However, since such a layer has a high refractive index, Rs is increased and the recording / reproducing characteristics are deteriorated. Has a negative effect.
【0020】本発明では、最外にある第1誘電体層の膜
厚を調整しておけば、第2誘電体層以降の膜厚を比較的
自由に選択できる。従ってRsを気にせずに最も平坦性
の高い膜厚を適宜選択することができる。又、多層誘電
体層を構成するいずれかの層を導電性をもった膜、例え
ばITO、ZnO:Al等にすることにより、帯電防止
機能を付与することもできる。このことにより静電気に
よりゴミ付着を抑制可能することができる。In the present invention, by adjusting the thickness of the outermost first dielectric layer, the thickness of the second dielectric layer and thereafter can be selected relatively freely. Therefore, the film thickness having the highest flatness can be appropriately selected without regard to Rs. In addition, an antistatic function can be provided by making any of the layers constituting the multilayer dielectric layer a conductive film, for example, ITO, ZnO: Al, or the like. This makes it possible to suppress adhesion of dust due to static electricity.
【0021】本発明の透明誘電体層を成膜する前に、紫
外線硬化樹脂等の有機物によるハードコートを施してお
いてもよい。有機物によるコートは膜厚が数μmのもの
を形成できるため、耐傷性をさらに向上できる。この有
機物コートに帯電防止機能を付与してもよい。又、本発
明の別の形態として、透明誘電体層を単層とし、この層
中において屈折率を連続的に変化させてもよい。これ
は、例えば窒化シリコンの反応性スパッタリングにおい
て、成膜中に成膜圧力を次第に上げて行くことにより達
成できる。窒化シリコン以外でも酸化シリコン、窒化ア
ルミニウム、酸化タンタル等でも可能である。Before forming the transparent dielectric layer of the present invention, a hard coat made of an organic material such as an ultraviolet curable resin may be applied. Since coating with an organic substance can form a film having a thickness of several μm, scratch resistance can be further improved. The organic coating may have an antistatic function. Further, as another embodiment of the present invention, the transparent dielectric layer may be a single layer, and the refractive index may be continuously changed in this layer. This can be achieved, for example, by gradually increasing the film formation pressure during film formation in reactive sputtering of silicon nitride. Other than silicon nitride, silicon oxide, aluminum nitride, tantalum oxide, or the like can be used.
【0022】本発明は基板表面の凹凸による偏光面の乱
れを低減できるので、情報再生に直線偏光を用いる光磁
気記録媒体に用いるのが好ましい。しかしそれ以外に
も、相変化媒体や凹凸ピットを再生する再生専用媒体に
用いても、凹凸による反射率変動の軽減やRsの低下に
よる顕著なノイズ低減効果、さらにRs低下による記録
感度向上が得られる。Since the present invention can reduce the disorder of the polarization plane due to the unevenness of the substrate surface, it is preferably used for a magneto-optical recording medium using linearly polarized light for information reproduction. However, in addition to this, even when used for a phase-change medium or a read-only medium for reproducing uneven pits, it is possible to obtain a remarkable noise reduction effect due to a reduction in reflectance fluctuation due to unevenness, a decrease in Rs, and an improvement in recording sensitivity due to a decrease in Rs. Can be
【0023】[0023]
【実施例】以下に実施例をもって本発明をさらに詳細に
説明するが、本発明はその要旨を越えない限り、以下の
実施例に限定されるものではない。EXAMPLES The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the scope of the present invention.
【0024】[0024]
【実施例1〜5、比較例1】基板として直径120mm
φ、中心穴径15mmφ、基板厚み0.6mmであり、
溝深さ70nmで1.2μm トラックピッチでランド部と
グルーブ部が同一幅を有する、屈折率1.58のポリカ
ーボネート樹脂基板を用いた。基板成形に用いられる金
型には半径50mmの位置に深さ約200μm、幅約1
mm、長さ約15mmの傷が溝と垂直の方向にあり、こ
れが全ての基板の光入射面に転写されている。基板単独
の状態では反り角がほとんど無い状態に成形してある。Examples 1-5, Comparative Example 1 120 mm in diameter as substrate
φ, center hole diameter 15mmφ, substrate thickness 0.6mm,
A polycarbonate resin substrate having a groove depth of 70 nm, a track pitch of 1.2 μm, and a land portion and a groove portion having the same width and a refractive index of 1.58 was used. A mold used for molding a substrate has a depth of about 200 μm and a width of about 1 at a radius of 50 mm.
A flaw having a length of about 15 mm and a length of about 15 mm is perpendicular to the groove, and is transferred to the light incident surface of all the substrates. When the substrate is used alone, it is formed so that there is almost no warp angle.
【0025】基板の溝が設けられていない側(光入射
面)に、第2誘電体層として膜厚d2=100nmの窒
化シリコン、第1誘電体層として膜厚d1の酸化シリコ
ンをこの順に設けた。窒化シリコンの屈折率は2.0で
あり、酸化シリコンの屈折率は1.5であった。膜厚d
1を第1表の様に変えた。この様に無機コートを施した
基板の溝側に、70nmの窒化シリコン、20nmのT
bFeCo、15nmの窒化シリコン、30nmのアル
ミからなる光磁気記録膜をこの順に全てのディスクに同
じ様に成膜した。On the side of the substrate where the groove is not provided (light incident surface), silicon nitride having a thickness of d2 = 100 nm as a second dielectric layer and silicon oxide having a thickness of d1 as a first dielectric layer are provided in this order. Was. The refractive index of silicon nitride was 2.0, and the refractive index of silicon oxide was 1.5. Film thickness d
1 was changed as shown in Table 1. A 70 nm silicon nitride and a 20 nm T
A magneto-optical recording film made of bFeCo, 15 nm of silicon nitride, and 30 nm of aluminum was formed in this order on all the disks in the same manner.
【0026】これらのディスクについて反り角、650
nmにおけるRsを測定した。さらに波長650nm、
NA=0.6の評価機で特性を測定した。半径35mm
で線速9m/s、記録周波数は3MHz、duty35
%とし、狭帯域SNR(CNR)及び記録開始パワーP
thを測定した。さらに、これらのディスクをドライブ
で測定して、半径50mmでの基板入射面の傷が信号欠
陥となるかどうか確認した。結果を第1表に示す。尚反
り角はディスク内の最大値を示し、0が反りの無い状態
を表す。The warpage angle of these disks, 650
Rs in nm was measured. Further, a wavelength of 650 nm,
The characteristics were measured with an evaluator with NA = 0.6. Radius 35mm
At a linear velocity of 9 m / s, a recording frequency of 3 MHz, and a duty of 35
%, Narrow-band SNR (CNR) and recording start power P
th was measured. Furthermore, these discs were measured with a drive, and it was confirmed whether or not a scratch on the substrate incident surface at a radius of 50 mm would be a signal defect. The results are shown in Table 1. The warp angle indicates the maximum value in the disk, and 0 indicates a state without warpage.
【0027】[0027]
【実施例6〜9、比較例2】第1誘電体層として膜厚d
1で屈折率1.7の酸化アルミを用いた以外は実施例1
と同様にディスクを作成した。これらのディスクについ
て実施例1と同様に測定を行った。結果を第2表に示
す。Examples 6 to 9 and Comparative Example 2 Film thickness d as first dielectric layer
Example 1 except that aluminum oxide having a refractive index of 1.7 was used in Example 1.
A disc was created in the same way as. The measurement was performed on these disks in the same manner as in Example 1. The results are shown in Table 2.
【0028】[0028]
【実施例10〜15、比較例3】第2誘電体層である窒
化シリコンの膜厚d2を変化させ、第1誘電体層として
酸化シリコンの膜厚d1を100nmに固定した以外は
実施例1と同様にディスクを作成した。これらのディス
クにおいての反り角、Rsと信号特性を実施例1と同様
に測定した。結果を第3表に示す。Examples 10 to 15 and Comparative Example 3 Example 1 except that the film thickness d2 of silicon nitride as the second dielectric layer was changed and the film thickness d1 of silicon oxide as the first dielectric layer was fixed at 100 nm. A disc was created in the same way as. The warpage angle, Rs and signal characteristics of these disks were measured in the same manner as in Example 1. The results are shown in Table 3.
【0029】[0029]
【実施例16】基板上にアルゴンと窒素の混合ガスによ
るシリコンターゲットの反応性スパッタリングにより、
第3誘電体層として屈折率2.2の窒化シリコンを50
nm、第2誘電体層として屈折率2.0の窒化シリコン
を50nm、第1誘電体層として屈折率1.8の窒化シ
リコンを60nm設けた。屈折率は窒素ガスの分圧を順
次増加させることにより変化させた。光磁気記録膜は実
施例1と同様に作成した。このディスクにおいてRsと
信号特性を実施例1と同様に測定した。反り角は3.2
mrad、Rsは0.6%、狭帯域SNR(CNR)は
54.8dB、記録開始パワーPthは4.4mWであ
った。半径50mmでの傷によりエラーは観察されなか
った。Embodiment 16 A reactive sputtering of a silicon target by a mixed gas of argon and nitrogen was performed on a substrate.
Silicon nitride having a refractive index of 2.2 is used as the third dielectric layer.
The second dielectric layer was provided with 50 nm of silicon nitride having a refractive index of 2.0, and the first dielectric layer was provided with 60 nm of silicon nitride having a refractive index of 1.8. The refractive index was changed by sequentially increasing the partial pressure of nitrogen gas. The magneto-optical recording film was formed in the same manner as in Example 1. Rs and signal characteristics of this disk were measured in the same manner as in Example 1. Warpage angle is 3.2
mrad and Rs were 0.6%, narrow band SNR (CNR) was 54.8 dB, and recording start power Pth was 4.4 mW. No errors were observed due to scratches at a radius of 50 mm.
【0030】[0030]
【実施例17、比較例4、5】基板厚みを1.2mm、
1.0mm、0.8mm、0.6mmと変化させた以外
は実施例1に用いられたものと同様の基板を作成した。
これらの基板上に第2誘電体層として屈折率2.0の窒
化シリコン、第1誘電体層として屈折率1.5の酸化シ
リコンを設けた。第1誘電体層の膜厚d1は100nm
に固定し、第2誘電体層の膜厚を変更していった。さら
に基板の溝側に、70nmの窒化シリコン、30nmの
GdFeCo、15nmの窒化シリコン、50nmのT
bFeCo、20nmの窒化シリコン、20nmのアル
ミからなる磁気誘導超解像光磁気記録膜を成膜した。Example 17, Comparative Examples 4 and 5 The substrate thickness was 1.2 mm,
Substrates similar to those used in Example 1 were prepared except that they were changed to 1.0 mm, 0.8 mm, and 0.6 mm.
On these substrates, silicon nitride having a refractive index of 2.0 was provided as a second dielectric layer, and silicon oxide having a refractive index of 1.5 was provided as a first dielectric layer. The thickness d1 of the first dielectric layer is 100 nm
And the thickness of the second dielectric layer was changed. Further, on the groove side of the substrate, 70 nm of silicon nitride, 30 nm of GdFeCo, 15 nm of silicon nitride, 50 nm of T
A magnetic induction super-resolution magneto-optical recording film made of bFeCo, 20 nm of silicon nitride, and 20 nm of aluminum was formed.
【0031】これらのディスクにおいて、第2誘電体層
を厚くしていけば、溝側の光磁気記録膜の応力と打ち消
し合い反り角が低下していく。反り角が3mrad 以下にな
る第2誘電体層の最低膜厚を第4表に示す。Rsはいず
れも1%以下であった。又、比較例4として、実施例1
7と同様の基板を用い、光入射面側に屈折率2.0の窒
化シリコンの誘電体層を、比較例5として光入射面側に
屈折率1.5の窒化シリコンの誘電体層を成膜した以外
は実施例17と同様に成膜し、光ディスクとした。これ
ら窒化シリコンの膜厚を変えて、反り角が3mrad以下に
なる最低膜厚を求めた。結果を第4表に示す。このとき
Rsは比較例4ではいずれのディスクも約4%、比較例
5ではいずれのディスクも約11%であった。これらの
実施例より、本発明により、透明誘電体層を薄くするこ
とが出来、同時にRsを低く抑えた光記録媒体を得るこ
とが出来る。In these disks, if the thickness of the second dielectric layer is increased, the stress of the magneto-optical recording film on the groove side cancels out and the warp angle decreases. Table 4 shows the minimum thickness of the second dielectric layer at which the warp angle becomes 3 mrad or less. Rs was 1% or less in each case. Further, as Comparative Example 4, Example 1
Using a substrate similar to that of Example 7, a dielectric layer of silicon nitride having a refractive index of 2.0 was formed on the light incident surface side, and a dielectric layer of silicon nitride having a refractive index of 1.5 was formed on the light incident surface side as Comparative Example 5. An optical disk was formed in the same manner as in Example 17 except that the film was formed. By changing the film thickness of these silicon nitrides, the minimum film thickness at which the warp angle becomes 3 mrad or less was determined. The results are shown in Table 4. At this time, Rs was about 4% for all disks in Comparative Example 4 and about 11% for all disks in Comparative Example 5. From these examples, according to the present invention, the transparent dielectric layer can be made thinner, and at the same time, an optical recording medium having a low Rs can be obtained.
【0032】[0032]
【表1】 [Table 1]
【0033】[0033]
【表2】 [Table 2]
【0034】[0034]
【表3】 [Table 3]
【0035】[0035]
【表4】 [Table 4]
【0036】[0036]
【発明の効果】本発明による光記録媒体を用いることに
より、記録膜に変更を加えること無く優れた再生信号品
質と高い記録感度、さらに優れた平坦性の全てを満たし
て媒体を提供することができる。By using the optical recording medium according to the present invention, it is possible to provide a medium satisfying all of excellent reproduction signal quality, high recording sensitivity and excellent flatness without changing the recording film. it can.
【図1】本発明の光記録媒体の一形態FIG. 1 shows an embodiment of the optical recording medium of the present invention.
【図2】本発明の光記録媒体の他の形態FIG. 2 shows another embodiment of the optical recording medium of the present invention.
【図3】従来の光記録媒体FIG. 3 shows a conventional optical recording medium.
Claims (4)
基板上に透明誘電体層を設けた光記録媒体であって、透
明誘電体層の屈折率が基板から離れる程小さくなること
を特徴とする光記録媒体。1. An optical recording medium having a recording layer provided on a substrate and a transparent dielectric layer provided on the substrate opposite to the recording layer, wherein the refractive index of the transparent dielectric layer decreases as the distance from the substrate increases. An optical recording medium characterized by the above-mentioned.
誘電体層からなることを特徴とする請求項1に記載の光
記録媒体。2. The optical recording medium according to claim 1, wherein the transparent dielectric layer comprises a plurality of transparent dielectric layers having different refractive indexes.
/3n(ただしλは空気中での再生光の波長、nは最外
層誘電体の屈折率を表す。)である請求項2に記載の光
記録媒体。3. The thickness of the outermost transparent dielectric layer is λ / 7n to λ.
The optical recording medium according to claim 2, wherein / 3n (where λ is the wavelength of the reproduction light in air, and n is the refractive index of the outermost dielectric).
乃至3に記載の光記録媒体。4. The method according to claim 1, wherein the thickness of the substrate is 0.8 mm or less.
4. The optical recording medium according to any one of items 1 to 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9236945A JPH1186340A (en) | 1997-09-02 | 1997-09-02 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9236945A JPH1186340A (en) | 1997-09-02 | 1997-09-02 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1186340A true JPH1186340A (en) | 1999-03-30 |
Family
ID=17008089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9236945A Pending JPH1186340A (en) | 1997-09-02 | 1997-09-02 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1186340A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135005A (en) * | 2008-12-04 | 2010-06-17 | Sony Corp | Optical recording medium and method for manufacturing the same |
US7923090B2 (en) | 2004-04-08 | 2011-04-12 | Panasonic Corporation | Optical information recording medium and method for manufacturing the same |
-
1997
- 1997-09-02 JP JP9236945A patent/JPH1186340A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7923090B2 (en) | 2004-04-08 | 2011-04-12 | Panasonic Corporation | Optical information recording medium and method for manufacturing the same |
JP2010135005A (en) * | 2008-12-04 | 2010-06-17 | Sony Corp | Optical recording medium and method for manufacturing the same |
JP4661953B2 (en) * | 2008-12-04 | 2011-03-30 | ソニー株式会社 | Optical recording medium and manufacturing method thereof |
US8293352B2 (en) | 2008-12-04 | 2012-10-23 | Sony Corporation | Optical recording medium and method for manufacturing the same |
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