JPH10242211A - Manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which easily forms a seal resin layer in a gap between semiconductor elements and board and furthermore facilitates this resin seal work. SOLUTION: The method comprises laying a seal resin sheet 10 on a wiring circuit board 1 through a plurality of spherical connecting electrodes 2 formed on this board, mounting semiconductor elements 3 in a predetermined place on the sheet 10, heating the sheet 10 into a melt, and filling and hardening the melt in a gap between the elements 3 and a circuit board 1 to seal the gap with the seal resin layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device by mounting a semiconductor element on a motherboard or a daughter board in a face-down structure.

[0002]

2. Description of the Related Art Recent demands for improvement in the performance of semiconductor devices include a method in which a semiconductor element is mounted on a mother board or a daughter board having a wiring circuit formed in a face-down structure (flip chip method, direct chip attach method). Etc.) are attracting attention. This is because, in the conventional method, for example, in a method of mounting a contact on a lead frame with a gold wire from a semiconductor element and mounting it on a motherboard or a daughter board, information transmission delay by wiring, This is due to the problem that an information transmission error or the like due to crosstalk occurs.

[0003]

On the other hand, in the flip chip method and the direct chip attach method,
Since the semiconductor elements having different linear expansion coefficients are directly electrically connected to the board and the above-mentioned board, there is a problem in the reliability of the connection portion. As a countermeasure, a liquid resin material is injected into the space between the semiconductor element and the board and cured to form a cured resin, and the stress concentrated on the electrical connection is dispersed also in the cured resin to improve connection reliability. A method for improving the performance is adopted. However, the liquid resin material needs to be stored at an extremely low temperature (−40 ° C.). In addition, the liquid resin material needs to be injected into a gap between the semiconductor element and the board using a syringe.
There are problems such as difficulty in controlling the injection amount. In addition, it is difficult to use a highly reliable solid material such as phenol because it is a liquid at room temperature.

The present invention has been made in view of such circumstances, and a sealing resin layer can be easily formed in a gap between the semiconductor element and the board, and the resin sealing operation is facilitated. It is an object of the present invention to provide a method for manufacturing a semiconductor device.

[0005]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention comprises the steps of:
A method of manufacturing a semiconductor device, comprising: mounting a semiconductor element via a plurality of connection electrode portions; and sealing a gap between the wiring circuit board and the semiconductor element with a sealing resin layer. The layer is formed by interposing a layered solid resin between the printed circuit board and the semiconductor element and melting the solid resin.

That is, according to the present invention, a semiconductor device is manufactured by sealing the gap between the printed circuit board and the semiconductor element, which is connected through the plurality of connection electrode portions, with the sealing resin layer. At this time, the sealing resin layer is formed by interposing a layered solid resin between the printed circuit board and the semiconductor element and melting the solid resin. Thus, while melting the layered solid resin, preferably by applying pressure, to complete the bonding between the printed circuit board and the semiconductor element, conventionally, after connecting the printed circuit board and the semiconductor element Compared with the complicated step of injecting the sealing resin into the gap, the step of connecting the printed circuit board to the semiconductor element and the step of resin sealing are performed at one time, and the manufacturing process can be greatly simplified. In addition, since a solid resin having excellent storability is used without using a liquid resin as the sealing resin, the above-described various problems at the time of injecting the resin into the voids do not occur.

Further, the present inventors have found that in the process of finding out the present invention, the solid resin has a maximum particle size of 100 μm.
m, the use of an epoxy resin composition containing a specific ratio of an inorganic filler set to be equal to or less than m indicates that the filling into the space between the substrate and the semiconductor element is performed favorably without generating voids or the like. .

[0008] The sealing resin layer formed by melting the solid resin is formed, for example, by mounting a sealing resin sheet on the wiring circuit board and then further forming a sealing resin layer on the sealing resin sheet. Then, the sealing resin sheet is heated and melted, and the gap between the printed circuit board and the semiconductor element is filled with the molten sealing resin and cured. Thereby, it can be easily formed.

Further, the sealing resin layer formed by melting the solid resin is formed such that a part of the connection electrode portion provided on the wiring circuit board surface is exposed. Thereafter, the semiconductor element is further mounted on the printed circuit board so that the electrode part of the semiconductor element contacts the connection electrode part, and then the sealing resin layer is heated and melted. Alternatively, after forming a sealing resin layer so that a part of the connection electrode portion provided on the semiconductor element surface is exposed,
Further, the semiconductor element is mounted on the printed circuit board so that the electrode section of the printed circuit board contacts the connection electrode section, and then the sealing resin layer is heated and melted. In this way, the gap between the printed circuit board and the semiconductor element can be easily formed by filling and curing the molten sealing resin.

In addition, a sealing resin layer formed by melting the solid resin is prepared by providing a sealing resin layer on one surface of the semiconductor element in advance, and a plurality of connection electrode portions are provided. A semiconductor element is mounted on the printed circuit board provided with the semiconductor device such that the sealing resin layer is in contact with the connection electrode portion. Alternatively, a wiring circuit board in which a sealing resin layer is provided on one surface is prepared in advance, and the connection electrode section of the semiconductor element provided with a plurality of connection electrode sections is provided on the wiring circuit board. A semiconductor element is mounted so as to be in contact with the sealing resin layer. Then, by heating and melting the sealing resin layer, the gap between the printed circuit board and the semiconductor element can be easily filled with the molten sealing resin and cured to be easily formed. it can.

[0011]

Next, embodiments of the present invention will be described in detail.

In a semiconductor device manufactured by the method of manufacturing a semiconductor device according to the present invention, as shown in FIG. 1, a semiconductor element 3 is mounted on one surface of a printed circuit board 1 via a plurality of connection electrode portions 2. Take the structure. Then, a sealing resin layer 4 is formed between the printed circuit board 1 and the semiconductor element 3.

The printed circuit board 1 and the semiconductor element 3
The plurality of connection electrode portions 2 that electrically connect to the semiconductor device 3 may be provided on the surface of the printed circuit board 1 in advance, or may be provided on the surface of the semiconductor element 3. Furthermore, they may be provided on both the printed circuit board 1 surface and the semiconductor element 3 surface in advance.

In the present invention, the connection electrode section may be a well-known electrode alone, but is a concept including an electrode and a conductor disposed on the electrode such as a joint ball. Therefore,
In general, the connection electrode portion of the printed circuit board and the connection electrode portion of the semiconductor element may both be connected to each other only by the electrodes, but usually, at least one of them is an electrode portion including an electrode and a joint ball. Thus, the two electrode portions are connected.

Therefore, in a normal mode, the plurality of connection electrodes 2 for electrically connecting the printed circuit board 1 and the semiconductor element 3 are provided with joint balls or the like on the printed circuit board 1 in advance. Alternatively, a joint ball or the like may be provided on the surface of the semiconductor element 3. Furthermore, joint balls or the like may be provided on both the printed circuit board 1 surface and the semiconductor element 3 surface in advance, respectively, and the electrode portions of both may be electrodes only.

The material of the plurality of connection electrode portions (joint bumps) 2 is not particularly limited, but
For example, gold stud bumps, low-melting and high-melting bumps made of solder, gold-plated bumps of a copper / nickel core, and the like can be given. Furthermore, by using the layered solid resin according to the present invention, the layered solid resin is used for a material such as the low-melting point solder, in which the shape of the solder collapses at a certain temperature. Can also be used for the purpose of controlling the height of the connection electrode section 2.

The material of the printed circuit board 1 is not particularly limited, but is roughly classified into a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate and a bismaleimide triazine substrate. can give. The layered solid resin of the present invention is suitable without particular limitation even in the case where the bonding temperature cannot be set to a high temperature in the combination of the plastic substrate and the connection electrode portion 2 made of low melting point solder. Used for

In the present invention, a layered solid resin is used as the material for forming the sealing resin layer 4, and for example, a solid epoxy resin composition is used.

The epoxy resin composition comprises an epoxy resin (a component), a curing agent (b component), and an inorganic filler (c
And a solid at room temperature.
In addition, the said normal temperature is 20 degreeC.

The epoxy resin (component (a)) is not particularly limited as long as it is a solid at room temperature, and conventionally known ones such as a biphenyl type epoxy resin and a cresol novolak type epoxy resin may be used. Sometimes it is preferable to use a low-viscosity material having good wettability. Particularly preferred is an epoxy resin having a structure represented by the following general formulas (1), (2), and (3) from the viewpoint of improving wettability. These may be used alone or in combination of two or more.

[0021]

Embedded image

[0022]

Embedded image

[0023]

Embedded image

In the epoxy resin having the structure represented by the above formulas (1) to (3), the epoxy equivalent is preferably 150 to 230.
It is preferable to use those having a melting point of 60 to 160 ° C. in g / eq. In addition, a liquid epoxy resin may be partially used to improve the wettability of the resin component.

The curing agent (component (b)) used together with the epoxy resin (component (a)) is not particularly limited, and various commonly used curing agents, for example, phenol resin, methylhexahydrophthalic anhydride and the like can be used. Acid anhydride-based curing agents are exemplified, and among them, phenol resins are preferably used. As the phenol resin, phenol novolak or the like is used, and it is particularly preferable to use a resin having a low viscosity. Among them, the hydroxyl equivalent is 80 to 120.
It is preferable to use those having a softening point of 80 ° C. or less in g / eq. More preferably, hydroxyl equivalent 90-110 g
/ Eq, softening point 50-70 ° C. Particularly preferably, the hydroxyl group equivalent is 100 to 110 g / eq, and the softening point is 55 to 6 g / eq.
5 ° C.

The epoxy resin (a component) and the curing agent (b)
When a phenol resin is used as a curing agent, the mixing ratio of the component) is preferably set such that the hydroxyl group equivalent in the phenol resin is in the range of 0.5 to 1.6 with respect to 1 equivalent of the epoxy group in the epoxy resin. . More preferably 0.8 to
1.2.

Examples of the inorganic filler (component c) used together with the components a and b include various inorganic fillers conventionally used, for example, silica powder, tanker, titanium white, and the like. Among them, spherical silica powder and crushed silica powder are preferably used, and it is particularly preferable to use spherical silica. As the inorganic filler (component (c)), a filler having a maximum particle size of 100 μm or less is preferably used. Particularly preferably, the maximum particle size is 50 μm or less. That is, the maximum particle size is 100 μm
This is because if the ratio exceeds the above range, it may not be possible to fill the space between the printed circuit board and the semiconductor element (a gap which is sealed with the resin layer using the sealing resin layer). Also, together with the maximum particle size,
It is preferable to use one having an average particle size of 1 to 20 μm, particularly preferably 2 to 10 μm. Therefore,
From such a viewpoint, the maximum particle size of the inorganic filler (component (c)) is 以下 or less of the distance between the printed circuit board and the semiconductor element (a gap that is resin-sealed using the sealing resin layer). It is preferable to set More preferably 1/10 to 1 /
3. That is, by setting the maximum particle size to １ ／ or less, the filling of the molten sealing resin layer between the printed circuit board and the semiconductor element can be favorably performed without generating voids or the like. It is.

The content of the inorganic filler (component (c)) is 90% by weight (hereinafter referred to as “%”) of the entire epoxy resin composition.
It is preferable to set it in the following range. It is more preferably 20 to 90%, particularly preferably 55 to 7%.
5%. That is, when the content of the inorganic filler (component c) is less than 20%, the properties of the cured resin for sealing, particularly the coefficient of linear expansion, become large, and therefore, the difference between the semiconductor element and the above coefficient becomes large. This may cause defects such as cracks in the cured resin or the semiconductor element. Also, 90
%, The meltability of the encapsulating resin increases and the filling properties deteriorate.

In addition to the above components a to c, the epoxy resin composition used in the present invention may optionally have a low stress such as a silicone compound (side chain ethylene glycol type dimethyl siloxane), acrylonitrile-butadiene rubber or the like. An agent, a flame retardant, a wax such as polyethylene and carnauba, a coupling agent such as a silane coupling agent (such as γ-glycidoxypropyltrimethoxysilane), and the like may be appropriately blended.

Examples of the flame retardant include a brominated epoxy resin, and a flame retardant auxiliary such as diantimony trioxide is used.

The epoxy resin composition used in the present invention is obtained, for example, as follows. That is, the component a and the component b, which are the above resin components, are mixed and melted under heating, and the component c and other additives are blended and mixed with the resin component in the molten state. Thereafter, a catalyst for adjusting the reactivity is added to make a homogeneous system, which is then received on a pallet, cooled, and then, for example, rolled into a sheet by press rolling. This composition is:
Usually, for example, it is general that a thixotropic agent is mixed into the composition so as to suppress the fluidity at the time of heating and curing during heating. Examples of the thixotropy-imparting agent include an acrylonitrile-butadiene copolymer.

The catalyst blended for the above-mentioned adjustment of the reactivity is not particularly limited, and may be one conventionally used as a curing accelerator. For example, triphenylphosphine, tetraphenylphosphate, tetraphenylborate, 2-methylimidazole and the like can be mentioned.

The method of mixing the above components and preparing the sheet is not limited to the above method.
In the mixing, a biaxial roll, a triaxial roll, or the like may be used. As for the method of producing the sheet, a method of forming a sheet by roll rolling, or a method of applying a mixture of solvents to form a sheet is also possible.
In addition, in the supply form of the epoxy resin composition, by adopting a tape form, a so-called reel-to-reel mass production form can be applied.

In the present invention, the thickness of the sheet, that is, the sealing resin sheet, is usually about 5 to 200 μm, preferably about 10 to 120 μm.

According to the method of manufacturing a semiconductor device of the present invention, as described above, a semiconductor element is mounted on a printed circuit board via a plurality of connection electrode portions, and the semiconductor device is mounted between the printed circuit board and the semiconductor element. When manufacturing a semiconductor device in which voids are sealed by a sealing resin layer, the sealing resin layer is formed by interposing a layered solid resin between the printed circuit board and the semiconductor element, and melting the solid resin. It is characterized by forming by. As a method of manufacturing such a semiconductor device, there are roughly three specific embodiments.

(1) First, a first embodiment of a method of manufacturing a semiconductor device according to the present invention will be described step by step with reference to the drawings. In this manufacturing method (first embodiment), a sheet-shaped resin, that is, a sealing resin sheet is used as the layered solid resin.

First, as shown in FIG. 2, a solid sealing material is placed on the printed circuit board 1 provided with a plurality of spherical connection electrodes (joint balls) 2 via the connection electrodes 2. The resin sheet 10 is placed. Next, as shown in FIG. 3, the semiconductor element 3 is placed at a predetermined position on the sealing resin sheet 10 and temporarily bonded, and then the sealing resin sheet 1 is mounted.
0 is melted by heating and melting, and the resin is filled with the molten resin in the gap between the semiconductor element 3 and the printed circuit board 1 by pressurization and cured to seal the gap with resin. Thus, the sealing resin layer 4 is formed. In this way,
The semiconductor device shown in FIG. 1 is manufactured.

In the above-described method for manufacturing a semiconductor device, the case where the printed circuit board 1 provided with a plurality of spherical connection electrodes (joint balls) 2 is used, but the present invention is not limited to this. A semiconductor element 3 in which the plurality of spherical connection electrode portions (joint balls) 2 are arranged on one surface (connection surface side) in advance may be used. In this case (using a connection element portion 2 provided on the surface of the semiconductor element 3 in advance), a fixed sealing resin sheet 10 is placed on the surface of the printed circuit board 1 as shown in FIG. Then, the semiconductor element 3 provided with the connection electrode portion 2 is mounted thereon such that the printed circuit board 1 and the surface on which the connection electrode portion 2 is provided face each other.
Further, in the case where the connection electrode portion 2 is provided on both the printed circuit board 1 and the semiconductor element 3, FIG.
As shown in (1), a sealing resin sheet 10 is arranged between the two connecting electrode portions 2. The subsequent steps are the same as described above.

As the sealing resin sheet 10, the semiconductor element 3 or the wiring circuit board 1 may be provided with the sealing resin sheet 1.
In the case of temporarily bonding 0, it is preferable to use a sheet-like epoxy resin composition having tackiness. The size of the encapsulating resin sheet 10 is appropriately set depending on the size (area) of the semiconductor element 3 to be mounted, and is usually slightly smaller than the size (area) of the semiconductor element 3. It is preferable to set In addition, the thickness and the weight of the sealing resin sheet 10 are the same as the above, the size of the semiconductor element 3 to be mounted and the size of the spherical connection electrode portion 2 provided on the wiring circuit board 1, It is set appropriately according to the volume occupied by the sealing resin layer 4 formed by filling the gap between the semiconductor element 3 and the printed circuit board 1 and sealing the resin.

The sheet-like epoxy resin composition having the above tackiness can be obtained, for example, by adding a rubber component such as an acrylonitrile-butadiene copolymer to the epoxy resin composition.

In the method of manufacturing a semiconductor device, the heating temperature at which the sealing resin sheet 10 is heated and melted into a molten state is determined in consideration of the deterioration of the semiconductor element 3 and the wiring circuit board 1 and the like. Is preferably set in the range of 70 to 300 ° C., particularly preferably 120 to 20 ° C.
0 ° C. Examples of the heating method include an infrared reflow oven, a dryer, a hot air blower, and a hot plate.

Further, when filling the sealing resin in the molten state into the gap between the semiconductor element 3 and the printed circuit board 1, it is preferable to apply pressure as described above. The pressure condition is appropriately set depending on the number of connection electrode portions (joint balls) 2 and the like, but is specifically set in a range of 0.02 to 0.5 kg / piece, preferably 0.04 to 0.5 kg / piece. It is set in the range of 0.2 kg / piece.

(2) Next, a second embodiment of the method of manufacturing a semiconductor device according to the present invention will be described step by step with reference to the drawings. In this production method (second embodiment), as the layered solid resin,
A sealing resin layer directly formed on at least one of the wiring circuit board surface and the semiconductor element surface on which the connection electrode portion is provided is used.

First, as shown in FIG. 6, the top of the spherical connection electrode portion 2 is exposed on the surface of the printed circuit board 1 on which a plurality of spherical connection electrode portions (joint balls) 2 are provided. The sealing resin layer 13 is formed. Next, as shown in FIG. 7, the semiconductor element 3 is attached to the printed circuit board 1 so that the connection electrode part 2 whose top is exposed from the sealing resin layer 13 and the electrode part of the semiconductor element 3 are in contact with each other. With. Then, the whole is heated to melt the sealing resin layer 13 to a molten state, and then pressurized to fill the gap between the semiconductor element 3 and the printed circuit board 1 with the molten sealing resin layer. 13 is filled and cured to seal the above-mentioned voids with the resin, thereby forming the sealing resin layer 4. In this way,
The semiconductor device shown in FIG. 1 is manufactured.

As shown in FIG. 6, the sealing resin layer 13 formed on the surface of the wiring circuit board 1 on which the spherical connection electrode portion 2 is provided so that the top of the connection electrode portion 2 is exposed. ,
For example, it can be manufactured as follows. That is, as shown in FIG.
On the printed circuit board 1 provided with
The solid encapsulating resin sheet 10 is placed via the substrate (the first embodiment of the above-described semiconductor device manufacturing method). Next, the sealing resin sheet 10 is heated and melted, so that the top of the connection electrode section 2 is provided on the surface of the printed circuit board 1 on which the spherical connection electrode section 2 is provided as shown in FIG. Is formed so that the sealing resin layer 13 is exposed.

Further, in addition to the method of forming the sealing resin layer 13 as described above, it can be manufactured, for example, as follows. That is, as shown in FIG. 8, the printed circuit board 1 provided with the connection electrode portion 2 is prepared in advance. Next, the printed circuit board 1 provided with the connection electrode section 2 is provided.
On the surface, a sealing resin layer 13 is formed by a printing coating method using an epoxy resin composition. In this manner, the sealing resin layer 13 is formed such that the top of the connection electrode portion 2 shown in FIG. 6 is exposed.

In the above-described method for manufacturing a semiconductor device, the case where the printed circuit board 1 provided with a plurality of spherical connection electrodes (joint balls) 2 is used, but the present invention is not limited to this. As in the first aspect described above, a semiconductor element 3 in which the plurality of spherical connection electrode portions (joint balls) 2 are arranged on one surface (connection surface side) in advance may be used. In this case, as shown in FIG. 9, a plurality of spherical connection electrode portions (joint balls) 2
A sealing resin layer 13 is formed on the surface of the semiconductor element 3 on which the top surface of the spherical connection electrode portion 2 is exposed. Next, the wiring circuit board 1 is mounted so that the connection electrode portion 2 whose top is exposed from the sealing resin layer 13 and the electrode portion of the wiring circuit board 1 are in contact with each other.

Further, in the case where the connecting electrode portion 2 provided on both the printed circuit board 1 and the semiconductor element 3 is used, at least one of the two is used.
The sealing resin layer 13 is formed on the formation surface such that the top of the connection electrode portion 2 is exposed. For example, as shown in FIG. 10, a plurality of spherical connection electrode portions (joint balls)
The sealing resin layer 13 is formed on the surface of the semiconductor element 3 provided with the semiconductor element 2 so that the top of the spherical connection electrode part 2 is exposed. Next, the semiconductor element 3 having the connection electrode portion 2 whose top is exposed from the sealing resin layer 13 is mounted on the printed circuit board 1 having the connection electrode portion. Alternatively, as shown in FIG.
The sealing resin layer 13 is formed on the surface of the printed circuit board 1 on which the top surface of the spherical connection electrode portion 2 is exposed. Next, the semiconductor element 3 having the connection electrode portion 2 is mounted on the printed circuit board 1 having the connection electrode portion 2 whose top is exposed from the sealing resin layer 13. Also,
As shown in FIG. 12, a sealing resin layer 13 is formed on the surface of the semiconductor element 3 on which the plurality of spherical connection electrodes 2 are provided so that the top of the spherical connection electrode 2 is exposed. I do. On the other hand, a sealing resin layer 13 is formed on the surface of the printed circuit board 1 on which the plurality of spherical connection electrodes 2 are provided so that the tops of the spherical connection electrodes 2 are exposed. Next,
A semiconductor element having a connection electrode portion 2 whose top portion is exposed from the sealing resin layer 13 on the printed circuit board 1 having a connection electrode portion 2 whose top portion is exposed from the sealing resin layer 13. 3 is installed. The subsequent steps are the same as described above.

In FIGS. 10 to 12, the method of forming the sealing resin layer 13 on the printed circuit board 1 provided with the connection electrode section 2 is based on the method of forming the connection electrode section on the printed circuit board 1 described above. 13 is formed according to the same method as the forming method in the case where 13 is provided. Further, the method for forming the sealing resin layer 13 on the semiconductor element 3 provided with the connection electrode portion 2 is similar to the above-described forming method, in which the sealing resin layer 10 is heated and melted, It is formed on the surface of the semiconductor element 3 on which the electrode part 2 is provided, according to a method of printing and coating.

In the second embodiment, the formed sealing resin layer 13 is designed so as not to flow out between the semiconductor element 3 and the printed circuit board 1 at a temperature exceeding the melting point. It is preferable to use the sealing resin layer 13.

In the manufacturing method of the second embodiment, the heating temperature of the encapsulating resin layer 13 is determined in consideration of the deterioration of the semiconductor element 3 and the wiring circuit board 1 as in the first embodiment. It is preferable to set the temperature in the range of 70 to 300 ° C. As the heating method, an infrared reflow oven, a drier, a hot air blower, a hot plate, and the like can be used in the same manner as described above. further,
The pressurizing condition is also appropriately set according to the number of connection electrode portions (joint balls) 2 and the like, as in the first embodiment described above, and specifically, 0.02 to 0.5 kg / piece. , And preferably in the range of 0.04 to 0.2 kg / piece.

In the second embodiment, FIGS.
As shown in FIG. 12, the connection electrode portion 2 is
And the semiconductor element 3 are provided on at least one of the connection electrode 2 forming surfaces thereof.
In the case where the sealing resin layer 13 is formed such that the top of the connection electrode portion 2 is exposed, still another embodiment is provided. This is such that a sealing resin sheet is further interposed between the printed circuit board 1 and the semiconductor element 3 in addition to the sealing resin layer 13.

That is, in still another embodiment of the type shown in FIG. 10, as shown in FIG. 13, the spherical connection electrode is provided on the surface of the semiconductor element 3 on which a plurality of spherical connection electrodes 2 are provided. Sealing resin layer 1 so that the top of part 2 is exposed
Form 3 Then, the semiconductor element 3 having the connection electrode portion 2 whose top is exposed from the sealing resin layer 13 is formed.
Is mounted on the printed circuit board 1 having the connection electrode portion via the sealing resin sheet 18.

In still another embodiment of the type shown in FIG. 11, as shown in FIG. 14, the spherical connection electrode is provided on the surface of the printed circuit board 1 on which a plurality of spherical connection electrodes 2 are provided. The sealing resin layer 13 is formed so that the top of the portion 2 is exposed. Next, the printed circuit board 1 having the connection electrode portion 2 whose top portion is exposed from the sealing resin layer 13
Then, the semiconductor element 3 having the connection electrode portion 2 is mounted via the sealing resin sheet 18.

In a further embodiment of the type shown in FIG. 12, as shown in FIG. 15, the spherical connection electrode is provided on the surface of the semiconductor element 3 on which a plurality of spherical connection electrodes 2 are provided. Sealing resin layer 13 so that the top of part 2 is exposed
To form On the other hand, the spherical connection electrode section 2 is provided on the surface of the printed circuit board 1 on which the plurality of spherical connection electrode sections 2 are provided.
The sealing resin layer 13 is formed such that the top of the head is exposed.
Next, from the sealing resin layer 13 to the printed circuit board 1 having the connection electrode portions 2 whose heads are exposed, the sealing resin layer 13 is used to connect the printed circuit board 1 to the printed circuit board 1. Semiconductor device 3 having connection electrode portion 2 having an exposed top
With. The subsequent steps are the same as described above.

In the manufacturing method according to still another embodiment shown in FIGS. 13 to 15, the heating temperature of the sealing resin layer 13 and the sealing resin sheet 18 is the same as that of the semiconductor element 3 and the wiring circuit board 1 in the same manner as described above. 70-3 considering the deterioration of
It is preferable to set the temperature in the range of 00 ° C. The same heating method as described above can be used. Further, the above-mentioned pressurizing condition is appropriately set in accordance with the number of connection electrode portions 2 and the like, similarly to the above-described condition.
０．５0.5 kg / piece, preferably 0.0
It is set in the range of 4 to 0.2 kg / piece.

(3) Next, a third embodiment of the method for manufacturing a semiconductor device according to the present invention will be described with reference to the drawings. This manufacturing method (third
In the embodiment, the above-mentioned layered solid resin is not used alone, but in a state where a sealing resin layer is provided in advance on a semiconductor element surface or a wiring circuit board surface on which a spherical connection electrode portion is not provided. use. However, electrodes are provided on both the semiconductor element and the printed circuit board.

First, an example in which a sealing resin layer is previously adhered to the semiconductor element surface will be described. That is, as shown in FIG. 16, a semiconductor element 3 in which a sealing resin layer 14 is formed on one surface in advance is prepared. Then, at a predetermined position on the printed circuit board 1 on which the plurality of spherical connection electrode portions (joint balls) 2 are provided,
The bonded resin layer 14 is bonded to the connection electrode portion 2.
The semiconductor element 3 is placed so as to be in contact with. After placing,
The sealing resin layer 14 is heated and melted to be in a molten state, and is pressurized to fill the gap between the semiconductor element 3 and the printed circuit board 1 with the resin in the molten state and to cure the resin. The gap is resin-sealed to form a sealing resin layer.
Thus, the semiconductor device shown in FIG. 1 is manufactured.

On the other hand, as another example of the third embodiment, an example in which a sealing resin layer is previously adhered to the surface of a printed circuit board will be described. That is, as shown in FIG. 17, a printed circuit board in which the sealing resin layer 15 is formed on one surface of the printed circuit board 1 in advance is prepared. Then, the semiconductor element 3 provided with the plurality of spherical connection electrode portions (joint balls) 2 is placed on the surface of the wiring circuit board 1 such that the connection electrode portion 2 and the sealing resin layer 15 are in contact with each other. It is placed on the sealing resin layer 15. After the placement, the sealing resin layer 15 is heated and melted to a molten state, and is pressurized to fill the gap between the semiconductor element 3 and the printed circuit board 1 with the molten resin, By curing, the gap is resin-sealed to form a sealing resin layer. Thus, the semiconductor device shown in FIG. 1 is manufactured.

In FIGS. 16 and 17, the sealing resin layers 14 and 15 are formed by attaching a sealing resin sheet to the semiconductor element 3 surface or the wiring circuit board 1 surface. A method of forming the layer forming material by printing and the like can be given.

As in the first embodiment, the size of the sealing resin layers 14 and 15 is appropriately set according to the size (area) of the semiconductor element 3.
Is preferably set to be slightly smaller than the size (area). The thickness and the weight (in the case of the sealing resin sheet) of the sealing resin layers 14 and 15 are the same as the above, the size of the semiconductor element 3 and the size of the connection electrode portion 2, that is, the semiconductor. It is set appropriately according to the volume occupied by the sealing resin layer 4 formed by filling the gap between the element 3 and the printed circuit board 1 and sealing the resin.

In the manufacturing method according to the third aspect, the heating temperature when the sealing resin layers 14 and 15 are heated and melted to be in a molten state may be the same as the first and second aspects described above. Similarly to the above, the temperature is preferably set in the range of 70 to 300 ° C. in consideration of the deterioration of the semiconductor element 3 and the wiring circuit board 1 and the like, and particularly preferably 120 to 200 ° C. Examples of the heating method include an infrared reflow oven, a dryer, a hot air blower, and a hot plate. Further, the sealing resin in the molten state is combined with the semiconductor element 3 and the printed circuit board 1.
It is preferable to pressurize as described above when filling the space between the electrodes, and the pressurizing condition is appropriately set according to the number of connection electrode portions (joint balls) 2 and the like. Specifically, it is set in the range of 0.02 to 0.5 kg / piece, preferably in the range of 0.04 to 0.2 kg / piece.

As an example of the semiconductor device manufactured according to the first to third aspects, as shown in FIG.
There is a type in which the formed sealing resin layer 4 is formed so as not to protrude from the periphery of the mounted semiconductor element 3. However, depending on the use of the semiconductor device, the type is formed as shown in FIG. The sealing resin layer 4 ′ may be of a type formed to protrude from the periphery of the mounted semiconductor element 3.

In the semiconductor device manufactured as described above, the size of the semiconductor element 3 is usually set to the width 2
~ 20mm x length 2 ~ 30mm x thickness 0.1 ~ 0.6m
m. The size of the printed circuit board 1 on which the printed circuit on which the semiconductor element 3 is to be mounted is formed is usually 1 width.
0-70mm x length 10-70mm x thickness 0.05-
It is set to 3.0 mm. The distance between the semiconductor element 3 and the gap between the wiring circuit board 1 and the space where the molten sealing resin is filled is usually 5 to 100 μm. Especially,
Considering the properties of the sealing resin used in the present invention,
The distance between the two is preferably set to 10 to 70 μm.

The properties of the sealing resin layer 4 formed by sealing with the sealing resin, that is, the sealing resin, are such that the melt viscosity at each use temperature is 1 to 100.
0 poise, gel time is 0.5 to 150 ° C.
30 minutes, the cured product has a linear expansion coefficient of 7-50p
pm. More preferably, the melt viscosity is 1 to 500 poise, the gel time is 1.0 to 15 minutes at 150 ° C, and the linear expansion coefficient is 12 to 40 ppm. That is, the filling property is improved by setting the melt viscosity within the above range. Further, by setting the gel time within the above range, the molding workability, particularly the curing time, can be shortened. Further, by setting the linear expansion coefficient within the above range, it becomes possible to prevent defects due to stress such as cracks in the cured resin or the semiconductor element. The melt viscosity was measured by a flow tester viscometer, and the gel time was measured on a hot plate. The coefficient of linear expansion was measured by thermomechanical analysis (TMA).

In the present invention, in any of the first to third aspects, the semiconductor element and the two electrode portions of the wiring circuit board are brought into contact with each other via the sealing resin sheet or the sealing resin layer, As described above, the sheet (or the resin layer) is heated and preferably cured by heating and pressurizing.

The above-mentioned pressurization preferably hardens the sealing resin while flattening or flattening the connection electrode portion (joint ball) such as solder.

At this time, generally, the material constituting the connection electrode portion is formed of a material which can flow when heated, for example, solder. After the sealing resin layer is cured, the adhesive between the semiconductor element and the printed circuit board is heated to about 215 ° C. in order to preferably melt the solder constituting the connection electrode portion. Generally, it is a device. The step of melting the material such as the solder constituting the connection electrode portion in this manner after the sealing resin sheet (sealing resin layer) is cured is not described in the above-described respective manufacturing methods. Is usually performed.

In most cases, the following can be said in the sealing with the sealing resin sheet (sealing resin layer) according to the present invention.

That is, when solder is used as the connection electrode portion, both the semiconductor element electrode portion and the wiring circuit board electrode portion (land portion) can be suitably melted and bonded without flux. It is common to be done.

Although the reason for the above is not clear, at the stage when the joined body of the semiconductor element and the printed circuit board is obtained, the periphery of the solder as the connection electrode portion is usually covered with the cured resin and covered with oxygen. Is in a state of being cut off,
Also, it is considered that cracks are generated on the solder surface during the above-mentioned flattening due to the pressure of the electrode portion, and the ground surface (non-oxidized surface) of the solder is exposed. Further, when a sealing resin sheet containing at least one of a trace amount of a chlorine component and an organic acid component, for example, a sheet made of an epoxy resin composition is used, at least one of the chlorine component and the organic acid component is used. It is effective in removing an oxide film formed on the surface of the connection electrode portion made of solder, and it is considered that this oxide film is removed. Then, in such an environment, by heating to about 215 ° C., both the electrode portions of the semiconductor device electrode portion and the wiring circuit board electrode portion are melted.

Next, examples will be described together with comparative examples.

First, prior to the examples, the following components were prepared.

[Epoxy resin a1] A biphenyl type epoxy resin having a structure represented by the following formula (4).

[0075]

Embedded image

[Epoxy resin a2] A cresol novolak type epoxy resin (epoxy equivalent: 195 g / eq, melting point: 60 to 90 ° C.).

[Hardening agent b] A phenol novolak resin (hydroxyl equivalent: 105 g / eq, softening point 60 ° C.).

[Inorganic fillers c1 to c5] These are spherical silica powders shown in Table 1 below.

[0079]

[Table 1]

[Catalyst d1] is triphenylphosphine.

[Catalyst d2] A mixture of tetraphenyl phosphate and tetraphenyl borate (molar mixing ratio: 1)
/ 1).

[Low Stress Agent] An acrylonitrile-butadiene rubber.

[Flame retardant] A brominated epoxyphenol novolak.

[Flame retardant aid] Diantimony trioxide.

[Wax] Polyethylene.

[Coupling agent] γ-glycidoxypropyltrimethoxysilane.

[0087]

Examples 1 to 13 Each of the above components was mixed at the ratios shown in Tables 2 and 3 below. This was received on a pallet, cooled, and press-rolled to form a sheet, thereby producing a desired sheet-like epoxy resin composition.

[0088]

[Table 2]

[0089]

[Table 3]

Using the sheet-like epoxy resin composition (resin sheet for encapsulation) of each of the examples thus obtained, the first embodiment in the above-described semiconductor device manufacturing method (described in the preceding paragraph number 0037). The semiconductor device was manufactured according to the following. That is, as shown in FIG. 2, after each of the sealing resin sheets 10 is placed on the board 1 via the spherical joint ball 2 provided on the board 1, as shown in FIG. The semiconductor chip 3 was placed on the sealing resin sheet 10. Then, heating temperature 180 ° C x load 0.06kg
Heating and melting the sealing resin sheet 10 under the condition of /, filling the molten resin into the gap between the board 1 and the semiconductor chip 3, and thermosetting (condition: curing at 200 ° C. × 20 minutes). As a result, as shown in FIG. 1, a semiconductor device in which the voids were sealed with the sealing resin layer 4 was produced. An initial energization check is performed on the obtained semiconductor device, and a pressure cooker test [PCT test (conditions: 121 ° C. × 2 atm × 10 4) is performed using the semiconductor device.
(Leaving at 0% RH for 200 hours)], and then conducting a current check. Then, the rate of occurrence of defects (defect occurrence rate) was calculated. Along with the defect occurrence rate, those in which a defect occurred were indicated by x, and those in which no defect occurred were indicated by ○. The results are shown in Tables 4 and 5 below.

[0091]

[Table 4]

[0092]

[Table 5]

As a result of the above Tables 4 and 5, no failure occurred in the initial energization check and the energization check 200 hours after the PCT test. From this, it is clear that in all of the examples, the sealing resin layer is formed in the gap between the board and the semiconductor chip, and the sealing resin in the gap is filled well. .

Using the epoxy resin compositions of Examples 1 to 13, a semiconductor device was manufactured in accordance with the above-described second embodiment of the semiconductor device manufacturing method (described in paragraph 0044 above). That is, as shown in FIG. 2, each sealing resin sheet 10 was placed on the board 1 on which the joint ball 2 was provided via the joint ball 2. Then, the sealing resin sheet 10 is heated and melted at 180 ° C. to form a sealing resin layer 13 on the surface of the board 1 so that the top of the joint ball 2 is exposed as shown in FIG. did. Next, as shown in FIG. 7, the semiconductor chip 3 was mounted on the board 1 such that the joint ball 2 having its top exposed from the sealing resin layer 13 and the electrode portion of the semiconductor chip 3 were in contact with each other. Next, the whole is heated (180 ° C.) to melt the sealing resin layer 13 provided on the surface of the board 1 so as to be in a molten state, and the semiconductor chip 3 and the board 1 are joined under pressure (condition: 200). ° C
As shown in FIG. 1, a semiconductor device in which the above-mentioned voids were resin-sealed with the sealing resin layer 4 was manufactured by performing heat curing in 20 minutes). An initial energization check and an energization check after the PCT test was left for 200 hours were performed on the obtained semiconductor device in the same manner as described above. As a result, similar to the previous evaluation result, the initial energization check and the PCT test 20
No failure occurred in the energization check after 0 hour. Therefore, the sealing resin layer 4 is formed in the gap between the board 1 and the semiconductor chip 3, and it is apparent that the sealing resin in the gap is filled well.

Further, using the epoxy resin compositions of Examples 1 to 13, a semiconductor device was manufactured in accordance with the above-described third embodiment of the method for manufacturing a semiconductor device (described in the preceding paragraph No. 0058). That is, as shown in FIG. 16, a semiconductor chip 3 was prepared in which each sealing resin sheet 14 was previously adhered to one surface of the semiconductor chip 3. Then, multiple joint balls 2
The semiconductor chip 3 was placed on the board 1 on which the sealing resin sheet 14 stuck was in contact with the joint ball 2. Then, heat the whole (180
1C) to melt the encapsulating resin sheet 14 to a molten state, and bond the semiconductor chip 3 and the board 1 by pressure (condition: thermosetting at 200 ° C. × 20 minutes). As shown in (1), a semiconductor device in which the gap between the semiconductor chip 3 and the board 1 was resin-sealed with the sealing resin layer 4 was manufactured. An initial energization check and an energization check after the PCT test was left for 200 hours were performed on the obtained semiconductor device in the same manner as described above. As a result, as in the previous evaluation result, no failure occurred in the initial energization check and the energization check after 200 hours of the PCT test.
Therefore, the sealing resin layer 4 is formed in the gap between the board 1 and the semiconductor chip 3, and it is apparent that the sealing resin in the gap is filled well.

[0096]

As described above, in the method of manufacturing a semiconductor device according to the present invention, the gap between the printed circuit board and the semiconductor element, which is connected through a plurality of connection electrode portions, is sealed by the sealing resin layer. When the resin is sealed, the sealing resin layer is formed by interposing a layered solid resin between the printed circuit board and the semiconductor element and melting the solid resin. As described above, since the molten resin fills the gap between the printed circuit board and the semiconductor element and is bonded to each other, the printed circuit board and the semiconductor element are compared with the conventional complicated manufacturing process. And the steps of resin sealing can be performed at once, and the manufacturing process is greatly simplified. Further, since a solid resin having excellent storability is used without using a liquid resin as the sealing resin, no problem occurs when the resin is injected into the void.

Further, by using an epoxy resin composition containing a specific ratio of an inorganic filler having a maximum particle size of not more than 100 μm as the solid resin, the space between the substrate and the semiconductor element can be filled. It is performed well without generating voids and the like.

As a sealing resin layer formed by melting the solid resin, a sealing resin sheet is mounted on the wiring circuit board, and then a semiconductor is formed on the sealing resin sheet. After mounting the element, the sealing resin sheet is heated and melted, so that the gap between the printed circuit board and the semiconductor element is filled with the resin in the molten state and cured to form the resin. it can. As described above, by using the sealing resin sheet as the layered solid resin, the manufacturing efficiency of the semiconductor device is significantly improved.

As the sealing resin layer formed by melting the solid resin, a sealing resin layer is formed on the printed circuit board so that a part of the connection electrode portion is exposed. Then, after mounting the semiconductor element on the semiconductor element mounting substrate so that the electrode part of the semiconductor element is in contact with the connection electrode part, the sealing resin layer is heated and melted. Alternatively, after forming a sealing resin layer so that a part of the connection electrode portion provided on the semiconductor element surface is exposed,
Further, the semiconductor element is mounted on the printed circuit board so that the electrode section of the printed circuit board contacts the connection electrode section, and then the sealing resin layer is heated and melted. In this way, it can be formed by filling the gap between the printed circuit board and the semiconductor element with the molten sealing resin and curing the resin. As described above, by using the sealing resin layer as the layered solid resin, the manufacturing efficiency of the semiconductor device is significantly improved.

The sealing resin layer formed so that a part of the connection electrode portion is exposed is provided on the wiring circuit board or the semiconductor element on which the connection electrode portion is provided, or on the semiconductor element. After the resin sheet for sealing is mounted via the substrate, the resin sheet for sealing can be easily formed by heating and melting. Alternatively, the encapsulating resin layer can be easily formed by printing and coating the encapsulating resin layer forming material on the wiring circuit board surface or the semiconductor element surface on which the connection electrode portion is provided.

Further, a sealing resin layer formed by melting the solid resin is prepared by previously providing a sealing resin layer on one side of the semiconductor element, and a plurality of connection electrode portions are formed. A semiconductor element is mounted on the provided printed circuit board such that the sealing resin layer is in contact with the connection electrode portion. Alternatively, a substrate in which a sealing resin layer is pasted on one surface of the printed circuit board is prepared in advance, and the connection electrode section of the semiconductor element provided with a plurality of connection electrode sections on the printed circuit board is prepared. Is placed on the semiconductor element so as to be in contact with the sealing resin layer. Then, by heating and melting the sealing resin layer, the gap between the printed circuit board and the semiconductor element can be easily filled with the molten sealing resin and cured to be easily formed. it can.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a semiconductor device obtained by a method of manufacturing a semiconductor device according to the present invention.

FIG. 2 is an explanatory sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment.

FIG. 3 is an explanatory sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment;

FIG. 4 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the first embodiment;

FIG. 5 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the first embodiment;

FIG. 6 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the second embodiment.

FIG. 7 is an explanatory sectional view showing a manufacturing step of the semiconductor device according to the second embodiment.

FIG. 8 is an explanatory cross-sectional view showing a step of manufacturing a semiconductor element mounting substrate used in a step of manufacturing a semiconductor device according to a second embodiment.

FIG. 9 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the second embodiment;

FIG. 10 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the second embodiment.

FIG. 11 is an explanatory cross-sectional view showing a manufacturing step of the semiconductor device according to the second embodiment.

FIG. 12 is an explanatory cross-sectional view showing a manufacturing step of the semiconductor device according to the second embodiment.

FIG. 13 is an explanatory cross-sectional view showing a manufacturing step of a semiconductor device in still another example of the second embodiment.

FIG. 14 is an explanatory sectional view showing a manufacturing step of a semiconductor device in still another example of the second embodiment.

FIG. 15 is an explanatory sectional view showing a manufacturing step of a semiconductor device in still another example of the second embodiment.

FIG. 16 is an explanatory sectional view showing a manufacturing step of the semiconductor device according to the third embodiment.

FIG. 17 is an explanatory sectional view illustrating a manufacturing step of the semiconductor device according to the third embodiment.

FIG. 18 is a cross-sectional view illustrating another example of a semiconductor device obtained by a method of manufacturing a semiconductor device according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wiring circuit board 2 Connection electrode part 3 Semiconductor element 4 Sealing resin layer 10 Sealing resin sheet 14, 15 Sealing resin layer 13 Sealing resin layer 18 Sealing resin sheet

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shinichiro Shuto 1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation (72) Inventor Takashi Fukushima 1-1-1-2 Shimohozumi, Ibaraki-shi, Osaka Nitto Denko Corporation

Claims (11)

[Claims] 1. A semiconductor in which a semiconductor element is mounted on a printed circuit board via a plurality of connection electrodes, and a gap between the printed circuit board and the semiconductor element is sealed by a sealing resin layer. A method of manufacturing a device, wherein the sealing resin layer is formed by interposing a layered solid resin between the printed circuit board and the semiconductor element and melting the solid resin. Recipe. 2. The method for manufacturing a semiconductor device according to claim 1, wherein said solid resin comprises the following epoxy resin composition (A). (A) It contains the following components (a) to (c),
The content ratio of the component is 90% of the entire epoxy resin composition (A).
An epoxy resin composition set to not more than% by weight. (A) Epoxy resin. (B) phenolic resin. (C) An inorganic filler having a maximum particle size of 100 μm or less. 3. A sealing resin layer formed by melting the solid resin, after a sealing resin sheet is placed on the printed circuit board, and a semiconductor is further formed on the sealing resin sheet. By mounting the element and then heating and melting the sealing resin sheet, the gap between the printed circuit board and the semiconductor element is filled with the molten sealing resin and cured. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed. 4. A sealing resin layer formed by melting the solid resin so that a part of a connection electrode portion provided on the surface of the printed circuit board is exposed. Thereafter, the semiconductor element is placed on the printed circuit board so that the electrode section of the semiconductor element is in contact with the connection electrode section, and then the sealing resin layer is heated and melted, so that the printed circuit board and the semiconductor are mounted. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin in a molten state is filled in a gap between the element and the sealing resin and cured. 5. The connecting electrode portion according to claim 4, wherein the sealing resin layer formed so as to expose a part of the connecting electrode portion is provided on the printed circuit board provided with the connecting electrode portion. 5. The method for manufacturing a semiconductor device according to claim 4, wherein the resin sheet for sealing is formed by heating and melting the resin sheet for sealing after mounting the resin sheet via a portion. 6. The sealing resin layer formed so that a part of the connection electrode portion according to claim 4 is exposed, the sealing resin layer is provided on the surface of the printed circuit board provided with the connection electrode portion. 5. The method for manufacturing a semiconductor device according to claim 4, wherein the layer forming material is formed by printing and coating. 7. After the sealing resin layer formed by melting the solid resin is formed so that a part of the connection electrode portion provided on the semiconductor element surface is exposed. The semiconductor element is mounted on the printed circuit board so that the electrode section of the printed circuit board comes into contact with the connection electrode section, and then the sealing resin layer is heated and melted to thereby form the printed circuit board and the semiconductor element. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin in the molten state is filled and cured in a gap between the semiconductor device and the semiconductor device. 8. The sealing resin layer formed so that a part of the connection electrode portion according to claim 7 is exposed, the connection resin portion being provided on a semiconductor element surface on which the connection electrode portion is provided. 8. The method of manufacturing a semiconductor device according to claim 7, wherein the sealing resin sheet is formed by heating and melting the sealing resin sheet after mounting the sealing resin sheet via the substrate. 9. The sealing resin layer formed so that a part of the connection electrode portion according to claim 7 is exposed, the sealing resin layer is formed on the semiconductor element surface on which the connection electrode portion is provided. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is formed by applying a forming material by printing. 10. A wiring circuit comprising: a sealing resin layer formed by melting the solid resin; a sealing resin layer formed on one surface of the semiconductor element; and a plurality of connection electrode portions provided. A semiconductor element is mounted on a substrate so that the sealing resin layer is in contact with the connection electrode portion, and then the sealing resin layer is heated and melted, so that the wiring circuit board and the semiconductor element 3. The method for manufacturing a semiconductor device according to claim 1, wherein the gap is formed by filling and curing the molten sealing resin. 11. A sealing resin layer formed by melting the solid resin forms a sealing resin layer on one surface of the printed circuit board, and then a plurality of connecting resin layers are formed on the printed circuit board. The semiconductor element is placed so that the connection electrode part of the semiconductor element provided with the electrode part is in contact with the sealing resin layer, and then the sealing resin layer is heated and melted to form the wiring circuit. In the gap between the substrate and the semiconductor element,
3. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed by filling and curing the sealing resin in a molten state.