Nothing Special   »   [go: up one dir, main page]

JPH0272656A - Sealing structure for semiconductor element - Google Patents

Sealing structure for semiconductor element

Info

Publication number
JPH0272656A
JPH0272656A JP22256188A JP22256188A JPH0272656A JP H0272656 A JPH0272656 A JP H0272656A JP 22256188 A JP22256188 A JP 22256188A JP 22256188 A JP22256188 A JP 22256188A JP H0272656 A JPH0272656 A JP H0272656A
Authority
JP
Japan
Prior art keywords
resin
sealing
semiconductor element
resistance
exposed surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22256188A
Other languages
Japanese (ja)
Inventor
Masahiro Kaizu
雅洋 海津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP22256188A priority Critical patent/JPH0272656A/en
Publication of JPH0272656A publication Critical patent/JPH0272656A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To maintain moisture resistance and environment resistance and to improve adhesive strength by providing a first sealing part which covers a bonding part and the entire exposed surface of a semiconductor element by using a resin characterized by excellent environment resistance, and providing a second sealing part which covers the entire outer surface of the first sealed part by using a resin characterized by excellent adhesive property with a wiring plate. CONSTITUTION:First sealing 6 is applied on bonding wires 5 and the entire exposed surface of a semiconductor element 1 together by using a resin characterized by excellent moisture resistance and environment resistance. Second sealing 8 is applied so as to cover the entire outer surface of the first sealing part 6 by using a resin characterized by adhesive strength especially with each raw material of a wiring plate 4. As a resin which is used for the first sealing 6 and is characterized by excellent moisture resistance and environment resistance, an epoxy resin whose concentration of incorporated chlorine is low and linear expansion coefficient is approximate to that of the wiring plate 4 and the like is used. Thus the moisture resistance and the environment resistance are maintained, and the fixing strength between the sealing resins and the wiring plate can be improved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、配線板上に直接ボンディングされた半導体素
子の樹脂による封止構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resin sealing structure for a semiconductor element directly bonded onto a wiring board.

(従来の技術) 近年、実装回路部品の小型軽量化やローコスト化を目的
として半導体素子をそのまま直接配線板上に実装する技
術が特に硬質配線板において一般化してきており、同様
にフレキシブルプリント配線板へも適用される傾向にあ
る。配線板上に半導体素子をそのまま直接実装し、電気
的な導通をとる方法としてはワイヤボンディング法やフ
リップチップ法等があるが、いずれの場合もボンディン
グしたあとで湿気や不純物の浸入に対する保護封止をす
るのが一般的である。この半導体素子の封止には樹脂を
用いるのが最も簡便であり、かつ、経済的であるが、こ
の樹脂は耐湿性および耐環境性の良いことはもちろん、
配線板の各素材との強固な接着性を有することが必要で
ある。
(Prior art) In recent years, the technology of directly mounting semiconductor elements directly onto wiring boards has become popular, especially for rigid wiring boards, with the aim of reducing the size, weight, and cost of mounted circuit components. It also tends to be applied to Wire bonding and flip-chip methods are methods for directly mounting semiconductor elements on a wiring board and establishing electrical continuity, but in either case, after bonding, protective sealing is required to prevent moisture and impurities from entering. It is common to do this. It is easiest and most economical to use resin for sealing semiconductor elements, but this resin has good moisture resistance and environmental resistance.
It is necessary to have strong adhesiveness with each material of the wiring board.

上記の如き半導体素子の封止構造の従来例の断面図を第
3図に示す。同図において、半導体素子1が、ポリイミ
ド樹脂等からなる基板2上に導体金属箔層3が設けられ
た配線板4上に実装され、ボンディングワイヤ5により
導体金属箔層3にボンディングされている。そして、半
導体素子1の全露出面がボンディングワイヤ5と共に樹
脂6により密封封止された構造となっている。第4図は
他の従来例であり、封止面積の縮小化と基板のたわみ等
による接着界面ストレスの緩和を目的としたガイド枠7
を設けたものであり、その他の構造は第3図と同様であ
り同一部分は同一符号にて示しである。
FIG. 3 shows a cross-sectional view of a conventional example of the sealing structure for a semiconductor element as described above. In the figure, a semiconductor element 1 is mounted on a wiring board 4 in which a conductive metal foil layer 3 is provided on a substrate 2 made of polyimide resin or the like, and is bonded to the conductive metal foil layer 3 with a bonding wire 5. The entire exposed surface of the semiconductor element 1 is hermetically sealed with the bonding wire 5 and the resin 6. Fig. 4 shows another conventional example, in which a guide frame 7 is used for the purpose of reducing the sealing area and alleviating adhesive interface stress due to substrate deflection, etc.
The other structure is the same as that in FIG. 3, and the same parts are indicated by the same reference numerals.

(発明が解決しようとする課題) 上記の如き半導体素子の封止に用いられる樹脂6には低
塩素台をのエポキシ系樹脂をアミン系の樹脂により硬化
させるものが主流をなしており、これに各種充填材やカ
ンプリング材などを配合したものが多く耐湿性及び耐環
境性は十分である。
(Problem to be Solved by the Invention) The mainstream resin 6 used for encapsulating semiconductor elements as described above is a low-chlorine epoxy resin cured with an amine resin. Many of them contain various fillers, compulsions, etc., and have sufficient moisture resistance and environmental resistance.

しかし、現在一般に使用されている封止樹脂は、特に配
線板にポリイミド樹脂基板が用いられている場合など、
これとの接着力が十分ではなく、ヒートサイクル試験や
プレッシャークツカー試験などの常圧あるいは加圧時の
温熱環境下においては接着界面から水分が浸入し、半導
体素子が損なわれる場合が少なくない。特に、フレキシ
ブルプリント配線板の場合は接着力が弱いと基板のたわ
み、そり等により接着界面から剥離することも少なくな
い。
However, the currently commonly used encapsulation resins are difficult to use, especially when polyimide resin substrates are used for wiring boards.
The adhesion strength is not sufficient, and under normal pressure or pressurized thermal environments such as heat cycle tests and pressure-couple tests, moisture infiltrates from the adhesive interface and often damages the semiconductor element. In particular, in the case of flexible printed wiring boards, if the adhesive strength is weak, the board often peels off from the adhesive interface due to deflection, warpage, etc.

単にポリイミド樹脂との接着力のみに着眼するならば、
ポリイミド系あるいはポリアミド系の樹脂が優れた接着
能を示すことが知られているが、これらの樹脂を半導体
素子の直接封止材として使用した場合は、樹脂そのもの
の有する吸湿性により耐環境性の劣化が予想されるほか
、特にポリイミド系樹脂のように樹脂の硬化温度が高い
ものが多く、そのために半導体素子が損なわれるという
欠点がある。
If we simply focus on the adhesive strength with polyimide resin,
Polyimide-based or polyamide-based resins are known to exhibit excellent adhesive properties, but when these resins are used as direct encapsulation materials for semiconductor devices, environmental resistance may be affected due to the hygroscopicity of the resin itself. In addition to expected deterioration, many resins, such as polyimide resins in particular, have a high curing temperature, which has the disadvantage of damaging semiconductor devices.

(課題を解決するための手段及び作用)本発明は上記の
如き課題を解決し、半導体素子を樹脂封止した場合の封
止樹脂と配線板との接着強度を向上し、特にフレキシブ
ルプリント配線板においては耐環境性及び基板のたわみ
、そり等に対する物理的な固着強度を改善するものであ
る。
(Means and effects for solving the problems) The present invention solves the above problems and improves the adhesive strength between a sealing resin and a wiring board when a semiconductor element is resin-sealed, and particularly improves the adhesive strength of a flexible printed wiring board. The objective is to improve environmental resistance and physical adhesion strength against bending, warping, etc. of the substrate.

すなわち、ボンディング部分と共に半導体素子の全露出
面を耐環境性の良い樹脂により覆って一次封止を行い、
更にこの一次封止の外側全表面を配線板容素材との接着
性の良い樹脂により覆って一次封止を行った封止構造と
する。また、外部光線を使用するデバイスなどの半導体
素子を封止する場合は、上記と同様な一次封止には光透
過性の耐環境性の良い樹脂を使用し、二次封止としては
上記の二次封止におけると同様な接着性の良い樹脂によ
り一次封止の外側外周縁部を環状に覆って行った封止構
造とするものである。
That is, the entire exposed surface of the semiconductor element along with the bonding portion is covered with a resin with good environmental resistance to perform primary sealing.
Furthermore, the entire outer surface of this primary sealing is covered with a resin that has good adhesion to the wiring board material to form a sealing structure in which primary sealing is performed. In addition, when sealing semiconductor elements such as devices that use external light, a light-transmissive and environmentally resistant resin is used for the primary sealing similar to the above, and a resin with good environmental resistance is used for the secondary sealing. The sealing structure is such that the outer peripheral edge of the primary seal is annularly covered with a resin with good adhesiveness similar to that used in the secondary seal.

上記の如く耐環境性の良い樹脂による一次封止と、接着
性の良い樹脂による二次封止との組み合わせによる封止
がなされるので、耐湿性、耐環境性が良く、しかも強固
な接着強度を有する樹脂封止構造とすることができる。
As mentioned above, sealing is performed by a combination of primary sealing using a resin with good environmental resistance and secondary sealing using a resin with good adhesive properties, so it has good moisture resistance and environmental resistance, and has strong adhesive strength. It is possible to have a resin-sealed structure having the following.

(実施例) 第1図及び第2図は、本発明による半導体素子の封止構
造の実施例の断面図であり、これらの図において、前記
従来例の第3図と同様に1は半導体素子、2はポリイミ
ド樹脂などからなる基板、3は導体金属箔層、4はこれ
らからなる配線板、5はボンディングワイヤである。
(Embodiment) FIGS. 1 and 2 are cross-sectional views of an embodiment of the sealing structure for a semiconductor element according to the present invention. In these figures, 1 denotes a semiconductor element as in FIG. 3 of the conventional example. , 2 is a substrate made of polyimide resin or the like, 3 is a conductive metal foil layer, 4 is a wiring board made of these, and 5 is a bonding wire.

第1図の実施例においては、ボンディングワイヤ5と共
に半導体素子1の全露出面を従来例の第3図と同様に耐
湿性、耐環境性の良い樹脂にて一次封止6を施し、更に
特に配線板の各素材との接着力の良い樹脂により一次封
止6の外側全表面を覆って二次封止8を施した構造であ
る。
In the embodiment shown in FIG. 1, the entire exposed surface of the semiconductor element 1 together with the bonding wires 5 is subjected to primary sealing 6 with a resin having good moisture resistance and environmental resistance, as in the conventional example shown in FIG. It has a structure in which the entire outer surface of the primary seal 6 is covered with a secondary seal 8 using a resin that has good adhesion to each material of the wiring board.

第2図の実施例においては、−上記第1図の実施例の場
合と同様に一次封止9を施し、更に上記第1図の実施例
における二次封止8と同様な樹脂を用いて一次封止9の
外側外周縁部を環状に覆って二次封止10を施した構造
である。
In the embodiment of FIG. 2, - a primary seal 9 is applied as in the embodiment of FIG. 1 above, and a resin similar to that of the secondary seal 8 in the embodiment of FIG. It has a structure in which the outer peripheral edge of the primary seal 9 is annularly covered and a secondary seal 10 is applied.

第1図における実施例の一次封止6に用いた耐湿性、耐
環境性の良い樹脂としては、含有塩素濃度が低く、かつ
、線膨張係数が配線板のそれと近似したエポキシ樹脂と
、硬化材として架橋効率の高いアミン系統のもので構成
され、さらにチキソドロピンク性能などを付与するため
に各種の充填剤やカップリング剤などを配合したものを
用いる。
The resin with good moisture resistance and environmental resistance used for the primary sealing 6 in the example shown in FIG. It is composed of an amine-based material with high crosslinking efficiency, and is mixed with various fillers and coupling agents to impart thixotropic properties.

第2図における実施例の場合は半導体素子が外部光線を
必要とする場合であり、一次封止9にはシリコーン等の
透光性の樹脂を使用する。また、第1図及び第2図にお
ける二次封止8及び10に用いる樹脂は基板のポリイミ
ド樹脂との接着性の良い樹脂として比較的高くない温度
で硬化するポリアミド系、ポリアミド−エポキシ系など
の樹脂を用いる。
In the case of the embodiment shown in FIG. 2, the semiconductor element requires external light, and the primary sealing 9 is made of a light-transmitting resin such as silicone. In addition, the resin used for the secondary seals 8 and 10 in FIGS. 1 and 2 is a polyamide-based resin, a polyamide-epoxy-based resin, etc., which cures at a relatively low temperature as a resin with good adhesiveness to the polyimide resin of the substrate. Uses resin.

(発明の効果) 本発明の如く半導体素子の封止構造として耐湿性、耐環
境性の良い樹脂による一次封止と、ポリイミド樹脂等の
基板との接着性の良い樹脂による一次封止とを組み合わ
せた封止構造とすることによって、耐湿性、耐環境性が
維持され、かつ、封止樹脂と配線板との固着強度が向上
し、特にフレキシブルプリント配線板では基板のたわみ
、そり等の変形による封止樹脂の剥離やクラックを防止
することができる。
(Effects of the Invention) As the sealing structure of the semiconductor element according to the present invention, primary sealing using a resin with good moisture resistance and environmental resistance is combined with primary sealing using a resin such as polyimide resin that has good adhesiveness to a substrate. By adopting a sealed structure, moisture resistance and environmental resistance are maintained, and the adhesion strength between the sealing resin and the wiring board is improved. Especially in flexible printed wiring boards, it is possible to prevent deformation such as bending or warping of the board. Peeling and cracking of the sealing resin can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は、本発明による半導体素子の封止構
造の実施例の断面図、第3図及び第4図は半導体素子の
封止構造の従来例の断面図である。 1:半導体素子、5:ボンディングワイヤ、6.9ニ一
次封止、8,10:二次封止。
1 and 2 are cross-sectional views of an embodiment of a sealing structure for a semiconductor element according to the present invention, and FIGS. 3 and 4 are cross-sectional views of a conventional example of a sealing structure for a semiconductor element. 1: Semiconductor element, 5: Bonding wire, 6.9 Primary sealing, 8, 10: Secondary sealing.

Claims (1)

【特許請求の範囲】 1、配線板上に直接ボンディングされた半導体素子がボ
ンディング部分と共に全露出面を樹脂により覆われて封
止されてなる半導体素子の封止構造において、樹脂によ
る封止が耐環境性の良い樹脂によりボンディング部分と
共に半導体素子の全露出面を覆ってなされる一次封止と
、配線板との接着性の良い樹脂により一次封止の外側全
表面を覆ってなる二次封止とからなることを特徴とする
半導体素子の封止構造。 2、配線板上に直接ボンディングされた半導体素子がボ
ンディング部分と共に全露出面を樹脂により覆われて封
止されてなる半導体素子の封止構造において、樹脂によ
る封止が光透過性の耐環境性の良い樹脂によりボンディ
ング部分と共に半導体素子の全露出面を覆ってなされる
一次封止と、配線板及び一次封止との接着性の良い樹脂
により一次封止の外側外周縁部を環状に覆ってなされて
なる二次封止とからなることを特徴とする半導体素子の
封止構造。
[Claims] 1. In a semiconductor element sealing structure in which a semiconductor element is directly bonded on a wiring board and its entire exposed surface is covered and sealed with a resin along with the bonding part, the sealing with the resin is durable. Primary sealing is done by covering the entire exposed surface of the semiconductor element along with the bonding part using environmentally friendly resin, and secondary sealing is done by covering the entire outside surface of the primary sealing with resin that has good adhesiveness to the wiring board. A sealing structure for a semiconductor element, characterized by comprising: 2. In a semiconductor element sealing structure in which a semiconductor element is bonded directly onto a wiring board and its entire exposed surface is covered and sealed with a resin along with the bonding part, the resin sealing is environmentally resistant and transparent. The primary sealing is performed by using a resin with good adhesiveness to cover the entire exposed surface of the semiconductor element along with the bonding part, and the outer peripheral edge of the primary sealing is covered in an annular shape with a resin that has good adhesion to the wiring board and the primary sealing. 1. A sealing structure for a semiconductor device, comprising a secondary sealing structure.
JP22256188A 1988-09-07 1988-09-07 Sealing structure for semiconductor element Pending JPH0272656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22256188A JPH0272656A (en) 1988-09-07 1988-09-07 Sealing structure for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22256188A JPH0272656A (en) 1988-09-07 1988-09-07 Sealing structure for semiconductor element

Publications (1)

Publication Number Publication Date
JPH0272656A true JPH0272656A (en) 1990-03-12

Family

ID=16784385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22256188A Pending JPH0272656A (en) 1988-09-07 1988-09-07 Sealing structure for semiconductor element

Country Status (1)

Country Link
JP (1) JPH0272656A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116409A (en) * 2012-12-07 2014-06-26 Denso Corp Electronic device
JP6288344B1 (en) * 2017-03-31 2018-03-07 日立化成株式会社 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method, and semiconductor device manufacturing method
JP6292334B1 (en) * 2017-03-31 2018-03-14 日立化成株式会社 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method, and semiconductor device manufacturing method
WO2018181602A1 (en) * 2017-03-31 2018-10-04 日立化成株式会社 Protective material for electronic circuit, protective sealing material for electronic circuit, sealing method, and method for manufacturing semiconductor device
JP2019169742A (en) * 2019-06-27 2019-10-03 日立化成株式会社 Electronic circuit protection material, sealing material for the same, sealing method, and semiconductor device manufacturing method
JP2019169741A (en) * 2017-12-14 2019-10-03 日立化成株式会社 Protective material for electronic circuit, sealant for protective material for electronic circuit, sealing method and method for manufacturing semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116409A (en) * 2012-12-07 2014-06-26 Denso Corp Electronic device
JP6288344B1 (en) * 2017-03-31 2018-03-07 日立化成株式会社 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method, and semiconductor device manufacturing method
JP6292334B1 (en) * 2017-03-31 2018-03-14 日立化成株式会社 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method, and semiconductor device manufacturing method
WO2018181602A1 (en) * 2017-03-31 2018-10-04 日立化成株式会社 Protective material for electronic circuit, protective sealing material for electronic circuit, sealing method, and method for manufacturing semiconductor device
JP2018174278A (en) * 2017-03-31 2018-11-08 日立化成株式会社 Electronic circuit protection material, sealing material for the same, sealing method, and semiconductor device manufacturing method
JP2018174277A (en) * 2017-03-31 2018-11-08 日立化成株式会社 Protective material for electronic circuit, sealant for protective material for electronic circuit, sealing method and method for manufacturing semiconductor device
KR20190119143A (en) * 2017-03-31 2019-10-21 히타치가세이가부시끼가이샤 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method and semiconductor device manufacturing method
CN110476243A (en) * 2017-03-31 2019-11-19 日立化成株式会社 The manufacturing method of electronic circuit protection materials, electronic circuit protection materials sealing material, encapsulating method and semiconductor device
KR20200007090A (en) * 2017-03-31 2020-01-21 히타치가세이가부시끼가이샤 Protective material for electronic circuit, protective sealing material for electronic circuit, sealing method, and method for manufacturing semiconductor device
TWI800504B (en) * 2017-03-31 2023-05-01 日商日立化成股份有限公司 Protection material for electronic circuit, method of sealing and method of producing semiconductor device
JP2019169741A (en) * 2017-12-14 2019-10-03 日立化成株式会社 Protective material for electronic circuit, sealant for protective material for electronic circuit, sealing method and method for manufacturing semiconductor device
JP2019169742A (en) * 2019-06-27 2019-10-03 日立化成株式会社 Electronic circuit protection material, sealing material for the same, sealing method, and semiconductor device manufacturing method

Similar Documents

Publication Publication Date Title
US6774481B2 (en) Solid-state image pickup device
TWI627720B (en) Package structure of fingerprint identification chip
US6593652B2 (en) Semiconductor device reinforced by a highly elastic member made of a synthetic resin
TW201810634A (en) Optical component package structure
EP0645812B1 (en) Resin-sealed semiconductor device
JPH0272656A (en) Sealing structure for semiconductor element
CN109427696B (en) Fingerprint sensing chip packaging structure
JP2009164362A (en) Solid-state imaging apparatus and method of manufacturing the same
JPH06334070A (en) Hybrid integrated circuit device
JPS60180147A (en) Semiconductor device
JPH09252064A (en) Bga-type semiconductor device
JPS6269538A (en) Resin sealed semiconductor device
KR100308899B1 (en) semiconductor package and method for fabricating the same
JP2712967B2 (en) Semiconductor device
JPH0621249Y2 (en) Electronic component sealing structure
JPH02135762A (en) Semiconductor device
JPS60136345A (en) Semiconductor device
JP2779322B2 (en) Semiconductor package manufacturing method
KR950006836Y1 (en) Semiconductor package
JPH01161840A (en) Flexible printed wiring board
JP3365339B2 (en) Semiconductor device
JPH04150061A (en) Semiconductor device
JP5495961B2 (en) LED unit
CN115513222A (en) Display device and manufacturing method thereof
JPH0236280Y2 (en)