JPH0945750A - Holding member of plate object and rotary treatment device with it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a holding member of a plate object and a rotary treatment device with it that decrease the number of foreign substance adhered to the plate object and improve throughput. SOLUTION: The rotary treatment device is provided with a wafer chucking part 2 that supports a semiconductor wafer 3 and an air flow control means 15 that comprises the outer circumference part 2a of the wafer chucking part 2 and a ring shaped plate part 5 that is arranged along the front surface 3a or a back surface 3b of the semiconductor wafer 3. A guided air flow formed by air flow control means 15 guides radially a photoresist liquid 10 that is supplied on the front surface 3a or on the back surface 3b or on both of them, and the air flow 18 formed near the front and back surfaces of the semiconductor wafer 3 and exhausts them outside the semiconductor wafer 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotation processing technique,
In particular, a plate-shaped object holding member that supports and rotates a plate-shaped object at the time of processing a plate-shaped object in semiconductor wafer manufacturing, liquid crystal substrate manufacturing, magnetic disk manufacturing, optical disk manufacturing, multilayer wiring board manufacturing, etc. The present invention relates to a rotation processing device.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

In manufacturing processes such as semiconductor wafer manufacturing, liquid crystal substrate manufacturing, magnetic disk manufacturing, and multilayer wiring board manufacturing, photoresist liquid, spin-on-glass liquid,
Polyimide resin liquid, pure water, developer (alkali chemical liquid),
A rotation processing device using a chemical liquid such as an etching liquid (acid-based chemical liquid) and an organic solvent is often used.

Regarding semiconductor wafer manufacturing, for example, Press Jar Co., Ltd., published on November 1, 1991, "Semiconductor World Special Issue '92 Latest Technology &Equipment" 47-
As described on page 53, a semiconductor integrated circuit device for write / read memory at any time; 64M-DRAM-LSI (64Mb
it Dynamic Random Access Memory Large Scale Integr
semiconductor devices such as an ated circuit) include (1) lithography for patterning a device pattern, an etching process, (2) ion implantation for obtaining device characteristics by doping impurities, heat treatment (oxidation, annealing, diffusion) process, (3) )
Thin film formation (CVD, sputtering, vapor deposition) step for forming an insulating film or wiring film, (4) cleaning (resist removal, front and back surface cleaning of semiconductor wafer with various chemicals) step, (5) inspection (appearance, dimensions, film thickness, A plurality of processes are performed in the (characteristics) process or the like to form a semiconductor functional element such as a semiconductor memory cell on the semiconductor wafer.

In these semiconductor wafer manufacturing processes, a coating and developing apparatus, a reduction projection exposure apparatus, an etching apparatus, an ion implantation apparatus, a cleaning apparatus, an oxidation diffusion apparatus, an annealing apparatus, CV
Various semiconductor wafer processing apparatuses such as a D apparatus and a sputtering apparatus are used.

Further, in the semiconductor wafer processing apparatus, particularly in the coating and developing apparatus and the cleaning apparatus, the semiconductor wafer is rotated, and a photoresist solution, a spin-on-glass solution, a polyimide resin solution, an organic solvent solution is applied to the front and back surfaces of the semiconductor wafer. , Supply various chemicals such as developer, etching solution,
A photoresist film, a spin-on-glass film or a polyimide film is formed on the surface of a semiconductor wafer, and a semiconductor element pattern is patterned on these films.

Thereafter, while rotating the semiconductor wafer,
An organic solvent solution, an etching solution or the like is dropped on the front and back surfaces of the semiconductor wafer to clean the front and back surfaces of the semiconductor wafer.

At this time, a rotation processing apparatus for supporting the semiconductor wafer to perform processing is used.

In these rotation processing apparatuses, it is commonly required to improve the accuracy of the thickness of the photoresist film, spin-on-glass film and polyimide film formed on the semiconductor wafer element surface. In particular, the photoresist film thickness accuracy requires a film thickness setting value of ± 0.3% or less.

On the other hand, from the viewpoint of cleanliness, the number of foreign matter adhering to the semiconductor wafer element surface is 0.2 μm or more and 5 or less per wafer, and the number of foreign matter adhering to the back surface of the semiconductor wafer is 0.3 μm or more. No more than 50 are required per wafer.

As the former measure for improving the accuracy of the spin coating film thickness formed on the surface of the semiconductor wafer device, Japanese Patent Laid-Open No. 5-20034 has been proposed.
As disclosed in Japanese Patent Laid-Open No. 9-93, during spin coating, an air flow flowing from the central part of the semiconductor wafer to the peripheral part of the semiconductor wafer is generated along the surface of the semiconductor wafer element surface, and fluctuations in evaporation rate are generated without generating turbulent air flow. A method has been devised to prevent this and improve the film thickness accuracy.

The latter method for reducing the number of foreign matters adhering to the front and back surfaces of a semiconductor wafer is disclosed in JP-A-62-2249.
31, JP-A-3-175617, JP-A-2
The rotation processing device for a plate-like material disclosed in Japanese Patent Laid-Open No. 303047 is introduced.

The rotation processing apparatus disclosed in Japanese Patent Laid-Open No. 62-224931 is a solvent that dissolves and removes the photoresist adhering to the back surface of the wafer with a thinner solution solvent, and scatters by the centrifugal force of the wafer being rotated. Is sucked and collected in the peripheral portion of the wafer.

In the rotary processing apparatus disclosed in Japanese Patent Laid-Open No. 3-175617, the structure of the plate-shaped object rotary processing cup is devised, and the wafer of the processing liquid supplied to the plate-shaped object at the time of the rotary processing by the exhaust gas flow in the cup. It prevents scattering and adhesion to the back surface.

The rotation processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2-303047 blows gas onto the back surface of the wafer to securely fix the wafer to the rotation support by the suction force based on the Bernoulli's principle and rotate the wafer. However, it is intended to prevent the processing liquid acting on the front surface of the wafer from getting around and adhering to the rear surface of the wafer.

[0016]

However, in the above-mentioned technique, a photoresist film spin coating apparatus in a semiconductor wafer manufacturing apparatus will be described below from the viewpoint of the accuracy of the photoresist film thickness and the number of foreign matters adhering to the front and back surfaces of the semiconductor wafer. There may be problems.

(1). From the viewpoint of the accuracy of the photoresist film thickness formed on the surface of the semiconductor wafer element, JP-A-2-30304.
Examining the contents described in Japanese Patent Publication No. 7, when the semiconductor wafer is rotated, a turbulent flow state is generated at the wafer support pin portion, and the evaporation rate of the photoresist liquid supplied to the semiconductor wafer element surface is partially increased to form a film. There is a problem that the photoresist film is partially thickened.

(2). Examining the number of foreign matters adhering to the photoresist film formed on the semiconductor wafer element surface, the contents described in Japanese Patent Laid-Open No. 5-2300049 are such that a semiconductor wafer is supported in a rotating closed space, This is a method of forming a photoresist film by a centrifugal force generated by high-speed rotation of the photoresist liquid dropped on the element surface. Therefore, when the semiconductor wafer is rotated, a decompression generating unit for decompressing the peripheral portion of the semiconductor wafer is provided to only control the air flow acting on the semiconductor wafer element surface. It does not have the function of preventing the splashing of liquid splashes and the adhesion of foreign matter to the semiconductor wafer element surface.

As a result, when the photoresist film is formed, there is a problem that the photoresist liquid bounces off on the semiconductor wafer element surface and foreign matter adheres thereto.

(3). Examining the number of foreign substances adhering to the back surface of the semiconductor wafer when forming a photoresist film on the surface of the semiconductor wafer element, Japanese Unexamined Patent Publication Nos. 5-200349, 62-224931, and 3-17 are cited.
In Japanese Patent No. 5617 as well, a semiconductor wafer is in contact with a rotation holding portion during rotation processing, and it is considered that foreign matter attached to the rotation holding portion is transferred and attached to the semiconductor wafer when forming a photoresist film. It

This problem is not limited to the photoresist film spin coating device, but is also common to spin processing devices for forming spin-on-glass films, polyimide resin films, and the like.

On the other hand, regarding the problem of the number of foreign matters adhering to the front and back surfaces of the semiconductor wafer, the development processing solution and the rinse solution are dropped on the element surface of the semiconductor wafer, and the semiconductor wafer is dried by spin-drying.
This is a common problem for sheet-fed development processing apparatuses that perform development processing sheet by sheet.

Further, a cleaning liquid is supplied to the semiconductor wafer element surface or the semiconductor wafer back surface to clean the semiconductor wafer element surface or the semiconductor wafer back surface, and spin-dry.
This is a problem common to single-wafer cleaning processing apparatuses that perform cleaning processing on each semiconductor wafer.

The object to be processed is not only a semiconductor wafer but also a plate-shaped object such as a liquid crystal substrate, a magnetic disk, an optical disk, and a multilayer wiring board. Is also a common problem.

An object of the present invention is to provide a plate-like object holding member that reduces the number of foreign substances attached to the plate-like object and improves processing performance, and a rotation processing device using the same.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0027]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the plate-shaped object holding member according to the present invention comprises a plate-shaped object supporting portion for supporting a plate-shaped object such as a semiconductor wafer, an outer peripheral portion of the plate-shaped object supporting portion, and an outer peripheral portion facing the outer peripheral portion. An air flow control means including a ring-shaped plate portion provided along the front surface or the back surface of the plate-like object, and the guide air flow formed by the air flow control means is supplied to one side or both sides of the plate-like object. The fluid and the airflow formed near the front and back surfaces of the plate-shaped material are radially guided and discharged to the outside of the plate-shaped material.

As a result, the airflow formed near the front and back surfaces of the plate-like object flows while being uniformly and radially guided in one direction in the outer peripheral direction of the plate-like object, so that the airflow formed near the plate-like object. Can be prevented from being disturbed.

Further, due to the air current that uniformly flows in the outer peripheral direction of the plate-like object, the fluid scattered outside the plate-like object is forcibly discharged to the outside of the plate-like object, and the fluid is bounced on the plate-like object. Can be prevented.

Further, in the plate-shaped object holding member according to the present invention, in the plate-shaped object support portion and the ring-shaped plate portion, diametrical cross-sectional shapes of respective inner peripheral surfaces facing each other form a similar curve. is there.

Further, the plate-like object holding member according to the present invention is
A plate-like object support portion supporting a plate-like object such as a semiconductor wafer and having a laminar flow forming surface for making an air flow generated in a gap formed by the plate-like object into a laminar flow state, and the plate-like object support Airflow control means having an outer peripheral portion inclined with respect to the laminar flow forming surface and a ring-shaped plate portion provided facing the outer peripheral portion, and a guide airflow formed by the airflow control means. However, the fluid is supplied to one surface or both surfaces of the plate-like material and the airflow formed near the front and back surfaces of the plate-like material is guided radially while inclining with respect to the laminar flow forming surface. It is discharged to the outside of the object.

In the plate-shaped object holding member according to the present invention, in the air flow control means, the voids formed by the outer peripheral portion of the plate-shaped object support portion and the ring-shaped plate portion are substantially even on the outer peripheral portion. There are provided a plurality of guide plates that are divided into.

Further, the plate-like object holding member according to the present invention is
The plate-like object is supported by a supporting member provided in the plate-like object supporting portion by point contact or line contact, or a combination of point contact and line contact.

Further, in the rotation processing device according to the present invention, a plate-shaped object holding member provided with the airflow control means on the outer peripheral portion,
A cup member that covers the periphery of the plate-shaped object holding member and is provided with at least one exhaust port, an exhaust unit that exhausts the fluid in the cup member through the exhaust port, and a dropping nozzle for the plate-shaped object. A fluid supply unit that supplies a fluid through the fluid supply unit, and a drive unit that rotates the plate-shaped object holding member. The fluid is supplied while rotating the plate-shaped object supported by the plate-shaped object holding member. By supplying the plate-shaped material, the plate-shaped material is processed.

[0036]

According to the above-mentioned means, the plate-like object holding member supports the plate-like object supporting portion, and the air flow control means including the outer peripheral portion of the plate-like object supporting portion and the ring-like plate portion. By having the guide airflow formed by the airflow control means, the fluid such as the photoresist liquid or thinner liquid supplied to the front surface or the back surface or both surfaces of the plate-like object and the front and back surfaces of the plate-like object are formed. The airflow can be guided and discharged to the outside of the plate-like material.

As a result, a dynamic fluid flow variation factor (spreading amount of the photoresist liquid or the like) which is a variation factor of the film formation of the photoresist film and a variation factor of the evaporation amount of the solvent contained in the fluid of the fluid. Can be eliminated, and the accuracy of the film thickness of the photoresist film or the like can be maintained with high accuracy.

Here, the air that has flowed into the plate-shaped object holding member through the ring-shaped plate portion flows out in the outer peripheral direction along the surface of the plate-shaped object, and when the plate-shaped object is rotated, the air near the plate-shaped object is generated. Air is dragged by viscous action.

Further, the air flowing out from the outer peripheral portion of the plate-like object has a swirling component and rotates in the same direction as the plate-like object.

After that, the guide airflow formed by the airflow control means guides the air flowing out from the outer peripheral portion of the plate-like material.

As a result, the airflow flowing along the surface of the plate-like object flows while being uniformly and radially guided in one direction in the outer peripheral direction of the plate-like object, and the air formed near the plate-like object flows. It does not disturb the flow.

When a fluid film is dropped on the surface of the plate-like material and then a photoresist film is formed by spin coating, and a fluid such as a thinner solution is supplied to the back surface of the plate-like material for thinner cleaning. Since the flow of the fluid and the airflow acting on the front and back surfaces of the plate-like material flow uniformly in the outer peripheral direction, the flow of the fluid and the turbulence and retention of the airflow can be eliminated.

As a result, even if the outer peripheral portion or the back surface of the plate-like object is positioned and supported by the projection such as a supporting member, the vector of the fluid or the air flow locally fluctuated by the projection will be It is possible to prevent a phenomenon that adversely affects the fluid or air flow vector acting on the front and back surfaces.

Furthermore, as a synergistic effect of these, since there is no rebounding foreign matter attached to the surface of the plate-like material, a highly pure photoresist film can be formed with high precision.

Since the air flow control means controls the flow of the fluid acting on the front and back surfaces of the plate-like object and the air flow, the air-flow control means acts on the front and back surfaces of the plate-like object due to the fluctuation of the air volume of the exhaust gas in the coating cup. The influence of fluid and air flow can be reduced.

Further, the air flow control means is provided with a plurality of guide plates which divide the space formed by the outer peripheral portion of the plate-shaped object support portion and the ring-shaped plate portion substantially evenly on the outer peripheral portion. With this, the airflow or fluid near the plate-like object that is radially discharged while being guided by the guide airflow can be further homogenized and stably discharged.

Since the plate-like object is supported by the supporting member provided in the plate-like object supporting portion in a point contact manner, the contact area between the plate-like object and the supporting member can be reduced.

[0048]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a partial sectional view showing an embodiment of the structure of a plate-shaped object holding member and a rotation processing device of the present invention, and FIG. 2 is a plate-shaped object holding member and a rotation processing device of the present invention. 4A is an enlarged partial plan view, FIG. 3B is a plan view, and FIG. 3 is a perspective view showing an embodiment of the structure of the plate-like object holding member according to the present invention. is there.

In the first embodiment, a photoresist spin coating processing apparatus used in a photoresist processing step of forming a semiconductor element pattern on a notched semiconductor wafer 3 which is an example of a plate-shaped object is taken as an example. Explain.

First, the structure of the plate-like object holding member according to the first embodiment will be described. The wafer chuck part 2 which is a plate-like object supporting part for supporting the semiconductor wafer 3, the outer peripheral part 2a of the wafer chuck part 2 and the outer periphery. The air flow control means 15 includes a ring-shaped plate portion 5 provided along the front surface 3a or the back surface 3b of the semiconductor wafer 3 so as to face the portion 2a.

That is, the guide airflow formed by the airflow control means 15 which rotates in synchronization with the wafer chuck 2 when the wafer chuck 2 rotates is the front surface 3 of the semiconductor wafer 3.
a or the back surface 3b, or the photoresist liquid 10 which is a fluid supplied to both the front surface 3a and the back surface 3b, and the air flow 18 formed near the front and back surfaces of the semiconductor wafer 3 while radially guiding the semiconductor wafer 3. It is discharged to the outside.

The guide air flow is controlled by the air flow control means 15
Is rotated to form a gap 15a formed by the outer peripheral portion 2a of the wafer chuck portion 2 and the ring-shaped plate portion 5, that is, the outer peripheral portion 3d of the semiconductor wafer 3.

Next, the structure of a rotation processing apparatus using the plate-shaped object holding member, that is, a photoresist rotation coating processing apparatus will be described. An air flow control means 15 is provided on the outer peripheral portion 2a of the wafer chuck section 2. A plate-shaped object holding member and at least 1 for covering the periphery of the plate-shaped object holding member
Application cup 1 which is a cup member provided with two (two in the first embodiment) exhaust ports 11, and a fluid in the application cup 1 (here, air flow 18, air flow in the application cup) via the exhaust ports 11. 13, an exhaust means 19 for exhausting the photoresist liquid 10, etc.), a fluid supply unit 20 for supplying the photoresist liquid 10 to the semiconductor wafer 3 via the dropping nozzle 9,
It is composed of a drive means 20a for rotating the wafer chuck portion 2 of the plate-like object holding member.

That is, the photoresist spin coating apparatus applies the photoresist solution 10 to the surface 3a of the semiconductor wafer 3 while rotating the notched semiconductor wafer 3 supported by the plate-shaped object holding member at a predetermined rotation speed. By applying (supplying) to the semiconductor wafer 3,
That is, the photoresist film is formed.

Here, the exhaust means 19 is a vacuum pump or a duct, and the drive means 20a is a motor.

Further, the exhaust means 19 exhausts the exhaust air 12 in the coating cup from the exhaust port 11 provided in the coating cup 1, so that the air flow 13 in the coating cup 1 is generated in the coating cup 1.

On the other hand, the wafer chuck portion 2 is provided with a thinner liquid supply port 8 for supplying the thinner liquid 7 which is a fluid to the back surface 3b of the semiconductor wafer 3 at the time of cleaning or the like.

Further, the outer peripheral portion 2a of the wafer chuck portion 2
The airflow control means 15 provided in the photoresist solution 10 provided on the surface 3a of the semiconductor wafer 3 having a notch.
And the thinner liquid 7 supplied to the back surface 3b of the semiconductor wafer 3.
Alternatively, the flow vector (velocity component and direction component) of the exhaust gas flow acting on the vicinity of the semiconductor wafer 3 such as the rotating air flow generated when the wafer chuck unit 2 is rotated is defined as the discharge vector 1.
It is controlled as 4, and is discharged into the coating cup 1.

The photoresist liquid 10 and the thinner liquid 7 acting on the front surface 3a or the back surface 3b of the semiconductor wafer 3 are used.
The fluid or exhaust airflow such as is exhausted to the outside of the semiconductor wafer 3 by the airflow control means 15, but the airflow control means 15 and the exhaust air 12 in the coating cup are formed on the front surface 3a or the back surface 3b of the semiconductor wafer 3 by the photoresist. It has a function of preventing the liquid 10 or the thinner liquid 7 or the exhaust gas flow from bouncing and adhering.

Now, the structure of the air flow control means 15 will be described in detail. The air flow control means 15 is composed of the outer peripheral portion 2a of the wafer chuck portion 2 and the ring-shaped plate portion 5 facing the outer peripheral portion 2a, and further, The air flow control means 15 includes an outer peripheral portion 2 a of the wafer chuck portion 2 and a ring-shaped plate portion 5.
There are provided a plurality of guide plates 16 that divide the void 15a formed by and on the outer peripheral portion 2a substantially evenly.

A guide port 17 is formed in the airflow control means 15 by the outer peripheral portion 2a of the wafer chuck portion 2, the ring-shaped plate portion 5 and the guide plate 16. The guide port 17 is a discharge channel for the fluid or the exhaust airflow, and is a rotating airflow generated by viscous action of air or the like in synchronization with the rotation speed of the wafer chuck unit 2 or a photo acting on the front and back surfaces of the semiconductor wafer 3. The resist solution 10 and the thinner solution 7 have a flow channel shape that does not abruptly change the flow vector (velocity and direction) scattered outside the semiconductor wafer 3 by the centrifugal force.

For example, the curved shape of the guide plate 16 is formed in a shape such as an involute curve that approximates a path along which the photoresist liquid 10 and the thinner liquid 7 are scattered by centrifugal force (the rotation direction in FIG. 2 is counterclockwise). rotation). However, the guide plate 16 is not limited to the curved shape, but may be a linear shape with a slight angle with respect to the diameter direction of the wafer chuck portion 2.

Further, in the air flow control means 15, the space 15a formed by the outer peripheral portion 2a of the wafer chuck portion 2 and the ring-shaped plate portion 5 is formed gradually narrower toward the outer side on the outer peripheral portion 2a. There is.

Therefore, the flow path shape in the air flow control means 15 is formed so as to have an approximately equivalent cross-sectional area along the outer peripheral direction of the wafer chuck portion 2. That is, the cross-sectional area in the circumferential direction of the air flow control means 15 is formed to be substantially equal regardless of the distance from the rotation center.

As a result, the air flow control means 15 causes the flow vector of the rotating air flow generated when the semiconductor wafer 3 is rotated and the photoresist liquid 1 scattered from the semiconductor wafer 3.
It is possible to control so that the flow vector of 0 or the thinner liquid 7 is uniformly and stably discharged without being suddenly disturbed.

Further, the wafer chuck portion 2 is provided with wafer support pins 4 which are supporting members for supporting the notched semiconductor wafer 3 at three points, and the notch portion 3c of the semiconductor wafer 3 and the semiconductor By using the wafer positioning pins 6 by utilizing the three points on the outer periphery of the wafer 3, the semiconductor wafer 3
Can be positioned and fixed to the wafer chuck unit 2.

Therefore, in the wafer chuck portion 2 of the first embodiment, the semiconductor wafer 3 is supported by the wafer supporting pins 4 which are the supporting members provided on the wafer chuck portion 2 in a point contact manner.

Next, the photoresist spin coating method of the first embodiment will be described.

First, a notched semiconductor wafer 3 is placed on the wafer support pins 4 while being positioned by the wafer positioning pins 6 of the wafer chuck portion 2 by using a handler device for carrying the semiconductor wafer 3.

In this state, the exhaust means 19 exhausts the exhaust gas from the exhaust port 11 in a controlled exhaust amount within a predetermined range. For example, the exhaust is performed by controlling at 2.5 ± 0.2 l / sec.

After that, when the wafer chuck 2 is rotated, the air flow control means 15 controls the front surface 3a or the back surface 3b of the semiconductor wafer 3 set on the wafer chuck 2 and the exhaust vector 14 of the exhaust air current acting on the vicinity thereof. To do.

Therefore, in the exhaust from the exhaust port 11, the fluid such as the photoresist liquid 10 and the thinner liquid 7 discharged from the guide port 17 of the air flow control means 15 or the exhaust air flow bounces in the coating cup 1, The amount of exhaust air is required to prevent the semiconductor wafer 3 from adhering to the front surface 3a or the back surface 3b.

In such an exhausted state, the dropping nozzle 9 is arranged on the semiconductor wafer 3 by, for example, a positioning mechanism of the dropping nozzle 9.

After that, the wafer chuck 2 is driven by the driving means 2
0a, while rotating at a predetermined number of rotations, a predetermined amount of photoresist liquid 10 is applied from the dropping nozzle 9 to the semiconductor wafer 3
Drop on top. For example, 3 cc of photoresist solution 10
Drop about.

At this time, the rotation speed of the wafer chuck 2 is
It is the number of rotations required to momentarily spread the photoresist liquid 10 dropped on the semiconductor wafer 3, for example, 1
Rotate at 000 rpm for 5 seconds.

Then, the dropping of the photoresist liquid 10 from the dropping nozzle 9 is completed, and the dropping nozzle 9 is attached to the coating cup 1.
Move out. Further, the wafer chuck unit 2 is rotated for several tens of seconds at a high speed rotation speed required for forming a thin film of the photoresist liquid 10 dropped on the semiconductor wafer 3. For example, it is rotated at 3200 rpm for 20 seconds.

As a result, after the photoresist film having a predetermined thickness is formed on the semiconductor wafer 3, the thinner liquid 7 is supplied from the thinner liquid supply port 8 while rotating the wafer chuck portion 2 at a predetermined rotation speed. A predetermined amount is supplied, and the back surface 3b of the semiconductor wafer 3 is cleaned with thinner. For example, while supplying the thinner liquid 7 at 50 cc / min, the rotation speed is 15
Rotate at 00 rpm for 10 seconds to perform a cleaning process.

After that, for example, the rotation is performed at 3000 rpm for 10 seconds to perform drying, and then the rotation of the wafer chuck unit 2 is stopped. Further, the semiconductor wafer 3 having the photoresist film formed thereon is taken out of the coating cup 1 by the handler device.

According to the plate-like object holding member of the first embodiment and the rotation processing apparatus using the same, the following operational effects can be obtained.

That is, the wafer chuck part 2 for supporting the semiconductor wafer 3 whose plate-like object holding member is a plate-like object, and the air flow control means 15 comprising the outer peripheral part 2a of the wafer chuck part 2 and the ring-like plate part 5. Since the guide airflow formed by the airflow control unit 15 has the semiconductor wafer 3
It is possible to guide the photoresist liquid 10 and the thinner liquid 7 supplied to the front surface 3a or the back surface 3b or both surfaces thereof and the air flow 18 formed near the front and back surfaces of the semiconductor wafer 3 to be discharged to the outside of the semiconductor wafer 3. .

As a result, a dynamic flow variation factor (such as the spread amount of the photoresist liquid 10) of the photoresist liquid 10 or the like, which is a variation factor of the photoresist film or the like, is contained in the liquid such as the photoresist liquid 10. It is possible to eliminate the cause of fluctuations in the amount of evaporation of the solvent and maintain the accuracy of the film thickness of the photoresist film or the like with high accuracy.

Here, the air that has flowed into the plate-shaped object holding member through the ring-shaped plate portion 5 flows out in the outer peripheral direction along the surface 3a of the semiconductor wafer 3, and when the semiconductor wafer 3 is rotated, the semiconductor wafer 3 is rotated. Air in the vicinity is dragged by viscous action.

Further, the air flowing out from the outer peripheral portion 3d of the semiconductor wafer 3 has a swirling component and rotates in the same direction as the semiconductor wafer 3.

After that, the guide airflow formed by the airflow control means 15 guides the air flowing out from the outer peripheral portion 3d of the semiconductor wafer 3.

As a result, the air flow 18 flowing along the front surface 3a of the semiconductor wafer 3 flows in the outer peripheral direction of the semiconductor wafer 3 while being uniformly and radially guided and guided, and is formed in the vicinity of the semiconductor wafer 3. It does not disturb the flow of air.

Furthermore, the photoresist liquid 10 and the thinner liquid 7 scattered outside the semiconductor wafer 3 are forcibly discharged to the outside of the semiconductor wafer 3 by the airflow 18 that flows uniformly in the outer peripheral direction of the semiconductor wafer 3, and further, Since the exhaust 12 in the coating cup is performed, it is possible to prevent the photoresist liquid 10 and the thinner liquid 7 from splashing on the semiconductor wafer 3.

Further, the air flow control means 15 causes the air flow 18 flowing along the surface 3a of the semiconductor wafer 3 to flow in the outer peripheral direction of the semiconductor wafer 3 while being uniformly and radially guided in one direction. It is possible to control the flow of the fluid such as the photoresist liquid 10 and the thinner liquid 7 acting on the front and back surfaces or both surfaces.

That is, after the photoresist solution 10 is dropped on the front surface 3a of the semiconductor wafer 3, a photoresist film is formed by spin coating, and the back surface 3 of the semiconductor wafer 3 is further formed.
When the thinner 7 is supplied to b to perform thinner cleaning,
Since the flow of the fluid such as the photoresist solution 10 and the thinner solution 7 and the air flow 18 acting on the front and back surfaces of the semiconductor wafer 3 uniformly flow in the outer peripheral direction, the flow of the fluid and the turbulence and retention of the air flow 18 are eliminated. be able to.

As a result, the outer peripheral portion 3d of the semiconductor wafer 3 is
Alternatively, even if the back surface 3b is positioned and supported by a protrusion such as a wafer support pin 4 (support member), the vector of the fluid or the air flow 18 that locally changes by the protrusion acts on the front and back surfaces of the semiconductor wafer 3. Fluid or air flow 1
It is possible to prevent a phenomenon that adversely affects the vector of 8.

As a result, even if the outer peripheral portion 3d or the back surface 3b of the semiconductor wafer 3 is positioned and supported by the protrusions such as the wafer support pins 4, a clean photoresist film is formed on the front surface 3a of the semiconductor wafer 3 with high film thickness accuracy. The film can be formed, and the back surface 3b of the semiconductor wafer 3 can be cleaned cleanly.

That is, when the semiconductor wafer 3 is rotated, a turbulent flow state is formed by the wafer support pins 4 of the semiconductor wafer 3, or the evaporation rate of the photoresist liquid 10 supplied to the semiconductor wafer 3 is partially increased, It is possible to prevent the photoresist film formed on the semiconductor wafer 3 from being partially thickened.

Further, as a synergistic effect of these, since there is no rebounding foreign matter or the like adhering to the front surface 3a of the semiconductor wafer 3, a highly pure photoresist film can be formed with high precision, and further, the back surface of the semiconductor wafer 3 can be formed. 3b can be always kept clean.

Further, the air flow 18 acting on the surface 3a of the semiconductor wafer 3, that is, the film-forming surface can be uniformly controlled, and turbulent flow and retention areas are not formed near the front and back surfaces of the semiconductor wafer 3, so that the semiconductor wafer 3 is not formed. The evaporation rate of the coating liquid such as the photoresist liquid 10 on the film-forming surface is not locally changed, and a uniform coating film with high film thickness accuracy can be formed.

Since the air flow control means 15 controls the flow of the photoresist solution 10 acting on the front and back surfaces of the semiconductor wafer 3 and the air flow 18, the air flow 18 in the coating cup changes the air flow of the semiconductor wafer 3. It is possible to reduce the influence of the photoresist liquid 10 and the air flow 18 acting on the front and back surfaces.

As a result, the accuracy of the coating film thickness can be maintained with high accuracy even if the air volume of the exhaust gas 12 in the coating cup is momentarily increased only when the photoresist liquid 10 is scattered in a large amount in the initial stage of coating film formation. As a result, it is possible to prevent the rebound of the photoresist liquid 10 from adhering to the semiconductor wafer 3.

Further, in the air flow control means 15, a plurality of guide plates 16 are provided which divide the space 15a formed by the outer peripheral portion 2a of the wafer chuck portion 2 and the ring-shaped plate portion 5 into substantially uniform division on the outer peripheral portion 2a. By being provided,
The airflow 18 in the vicinity of the semiconductor wafer 3 or the fluid such as the photoresist liquid 10 and the thinner liquid 7 that is radially discharged while being guided by the guide airflow can be discharged more uniformly and stably.

Since the semiconductor wafer 3 is supported by the wafer support pins 4 provided on the wafer chuck 2 in a point contact manner, the contact area between the semiconductor wafer 3 and the wafer support pins 4 can be reduced. .

As a result, when the semiconductor wafer 3 is rotated and processed, it is possible to reduce the transfer of foreign matter adhered to the plate-shaped object holding member having the wafer chuck portion 2 to the semiconductor wafer 3, and as a result, The number of foreign substances attached to the semiconductor wafer 3 can be reduced. Furthermore, since the contact area between the semiconductor wafer 3 and the wafer support pins 4 can be reduced, the influence of heat transferred to the semiconductor wafer 3 is small, and the local fluctuation of the evaporation rate of the coating liquid due to the heat influence is reduced. As a result, a uniform coating film with good film thickness accuracy can be formed.

(Embodiment 2) FIG. 4 is a view showing an example of the structure of a plate-like object holding member according to another embodiment of the present invention.
(A) is an enlarged partial plan view and (b) is a sectional view.

Also in the second embodiment, the rotation processing apparatus using the plate-shaped object holding member is a photoresist processing for forming a semiconductor element pattern on the notched semiconductor wafer 3 which is an example of the plate-shaped object. This is the case of the photoresist spin coating processing apparatus used in the process.

The structure of the plate-like object holding member according to the second embodiment will be described with reference to FIGS. 1 and 4. The wafer chuck part 22 which is a plate-like object supporting part for supporting the semiconductor wafer 3 is explained.
And the outer peripheral portion 22a and the outer peripheral portion 22 of the wafer chuck portion 22.
the front surface 3a or the back surface 3b of the semiconductor wafer 3 facing the a
And an air flow control means 35 including a ring-shaped plate portion 25 provided along the.

Here, the airflow control means 35 has a similar cross-sectional shape, that is, a pseudo-hyperbolic curve, in the diametrical sectional shapes of the inner peripheral surfaces 22b and 25a of the wafer chuck portion 22 and the ring-shaped plate portion 25 which face each other. Is what you make.

That is, the cross-sectional areas in the circumferential direction of the space formed by the wafer chuck portion 22 and the semiconductor wafer 3 are made substantially equal to each other, and the thinner liquid 7 flowing in the space or
The flow velocity of air or the like is made equal, stagnation and retention are eliminated, and the thinner liquid 7 or air is applied to the semiconductor wafer 3 in a laminar flow state.

Further, since the cross-sectional areas of the air flow control means 35 in the circumferential direction are made substantially equivalent, a fluid such as the photoresist liquid 10 and the thinner liquid 7 flowing in the air flow control means 35,
Or, make the flow velocity of exhaust airflow such as rotating airflow constant,
The stagnation and stagnation in the air flow control means 35 are eliminated, and the air flow control means 35 controls the discharge vector 34 acting on the front surface 3a or the back surface 3b or both surfaces of the semiconductor wafer 3 or in the vicinity thereof as the exhaust vector 34. There is.

Therefore, the guide airflow formed by the airflow control means 35 that rotates synchronously with the wafer chuck portion 22 when the wafer chuck portion 22 rotates is supplied to the front surface 3a or the back surface 3b of the semiconductor wafer 3 or both surfaces thereof. Photoresist solution 10 and semiconductor wafer 3
The airflow 38 formed in the vicinity of the front and back surfaces can be discharged to the outside of the semiconductor wafer 3 while being radially guided.

The guide air flow is controlled by the air flow control means 35.
Is rotated to form a space 35a formed by the outer peripheral portion 22a of the wafer chuck portion 22 and the ring-shaped plate portion 25, that is, the outer peripheral portion 3d of the semiconductor wafer 3.

Further, the wafer chuck portion 22 is provided with the wafer supporting pins 4 which are the supporting members for supporting the notched semiconductor wafer 3 at three points, as in the first embodiment. The semiconductor wafer 3 can be positioned and fixed to the wafer chuck portion 22 by the wafer positioning pins 6 by utilizing the notches 3c of 3 and the three points on the outer periphery of the semiconductor wafer 3.

Here, the airflow control means 35 in the second embodiment is not provided with the guide plate 16 shown in the first embodiment, and is dispersed and fixed in three locations on the outer peripheral portion 2a of the wafer chuck portion 2. Ribs 36 are provided.

That is, the outer peripheral portion 22a of the wafer chuck portion 22 and the ring-shaped plate portion 25 are formed by the three fixing ribs 36.
And are fixed.

The rotation processing apparatus of the second embodiment is the same as the photoresist spin coating processing apparatus described in the first embodiment, except that the plate-shaped object holding member shown in the first embodiment is replaced by the plate-shaped holding member shown in the second embodiment. The object holding member is only replaced, and the configuration of the other members is the same as that described in the first embodiment, and thus the duplicate description thereof will be omitted.

Further, other operational effects obtained by the plate-like object holding member of the second embodiment and the rotation processing apparatus using the same are also the same as those described in the first embodiment, and therefore the duplicated description will be omitted. Omit it.

(Embodiment 3) FIG. 5 is a view showing an example of the structure of a plate-like object holding member according to another embodiment of the present invention.
(A) is an enlarged partial plan view and (b) is a sectional view.

The semiconductor wafer 43, which is a plate-like material in the third embodiment, has an orientation flat portion (hereinafter, abbreviated as orientation flat portion) 43c.

Further, the rotation processing apparatus using the plate-shaped object holding member is similar to that of the first embodiment, in the photoresist processing step of forming a semiconductor element pattern on the semiconductor wafer 43 which is an example of the plate-shaped object. This is the case of the photoresist spin coating processing apparatus used in.

The structure of the plate-like object holding member according to the third embodiment will be described with reference to FIGS. 1 and 5. An air flow 48 generated in a space 42c formed by the semiconductor wafer 43 and supporting the semiconductor wafer 43. The wafer chuck portion 42, which is a plate-shaped object support portion having a laminar flow forming surface 42b for making the laminar flow state, and an outer peripheral portion 42a and an outer peripheral portion 42a inclined with respect to the laminar flow forming surface 42b of the wafer chuck portion 42. The air flow control means 55 is composed of a ring-shaped plate portion 45 provided so as to face each other.

Here, for fixing the semiconductor wafer 43, the orientation flat portion 43c is brought into contact with the wafer positioning pin 6 to perform positioning, and the semiconductor wafer 43 is mounted on the wafer support pin 4.

Further, in the third embodiment, the shape of the laminar flow forming surface 42b of the wafer chuck portion 42 facing the semiconductor wafer 43 is made flat, and the void 42c formed by the semiconductor wafer 43 and the laminar flow forming surface 42b. 1-2 mm
Is narrowed to.

As a result, the air flow 48 flowing in the gap 42c.
Alternatively, the flow of the fluid such as the thinner liquid 7 is made laminar.

Further, the plate-like object holding member according to the third embodiment controls the discharge vector 54 by making the flow path shape of the air flow control means 55 and the direction of the guide port 57 downward (exhaust direction).

That is, when the wafer chuck 42 is rotated, the air flow control means 55 is rotated synchronously with the wafer chuck 42.
The guide airflow formed by the semiconductor wafer 43 is supplied to the front surface 43a, the back surface 43b, or both surfaces of the semiconductor wafer 43 and the fluid such as the photoresist liquid 10 and the semiconductor wafer 4.
The air flow 48 formed near the front and back surfaces of
While being inclined with respect to 2b, it is radially guided and discharged to the outside of the semiconductor wafer 43.

The guide air flow is controlled by the air flow control means 55.
Is rotated to form a space 55a formed by the outer peripheral portion 42a of the wafer chuck portion 42 and the ring-shaped plate portion 45, that is, the outer peripheral portion 43d of the semiconductor wafer 43.

As a result, since the flow path shape of the air flow control means 55 is forcibly directed downward (exhaust direction), the rotational air flow generated by viscous action of air or the like in synchronization with the rotation speed of the wafer chuck 42, The flow vector (velocity and direction) in which the photoresist liquid 10 or the thinner liquid 7 acting on the front surface 3a or the back surface 3b of the semiconductor wafer 43 is scattered by the centrifugal force can be changed.

As a result, since the guide port 57 provided in the air flow control means 55 faces downward, the fluid such as the photoresist liquid 10 and the thinner liquid 7 discharged into the coating cup 1 bounces in the coating cup 1. Adhesion to the semiconductor wafer 43 can be reduced.

Here, in the air flow control means 55 in the third embodiment, the guide plate 16 shown in the first embodiment is not provided, and the air flow control means 55 is dispersed and fixed at three locations on the outer peripheral portion 42a of the wafer chuck portion 42. Ribs 36 are provided.

That is, by the three fixing ribs 36, the outer peripheral portion 42 a of the wafer chuck portion 42 and the ring-shaped plate portion 45.
And are fixed.

The rotation processing apparatus of the third embodiment is the same as the photoresist spin coating processing apparatus described in the first embodiment, except that the plate-shaped object holding member shown in the first embodiment is replaced by the plate-shaped holding member shown in the third embodiment. The object holding member is only replaced, and the configuration of the other members is the same as that described in the first embodiment, and thus the duplicate description thereof will be omitted.

Further, other operational effects obtained by the plate-shaped object holding member of the third embodiment and the rotation processing apparatus using the same are the same as those described in the first embodiment, and therefore, the duplicate description will be omitted. Omit it.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the spin processing apparatus described in the first, second or third embodiment has been described as applied to the photoresist spin coating apparatus which is a semiconductor wafer manufacturing apparatus, but the present invention is not limited to this. The spin coating apparatus can also be applied to a spin-on-glass solution, a polyimide resin solution, or the like.

Further, the rotation processing device can also be applied to a development processing device.

That is, after forming a photoresist film on the notched semiconductor wafer 3 shown in FIG. 1, the semiconductor element pattern is subjected to photosensitization. Furthermore, the semiconductor wafer 3
After being placed at a predetermined position, a developing solution is supplied from the dropping nozzle 9 to the semiconductor wafer 3 for development processing.

Then, pure water is supplied from the dropping nozzle 9 to the surface 3a of the developed semiconductor wafer 3 to rinse it.
At the same time, pure water is supplied from the thinner supply port 8 to the semiconductor wafer 3
The back surface 3b of the semiconductor wafer 3 is washed while being supplied to the back surface 3b of the above, and then spin-dried. Therefore, it is also effective when applied to a single-wafer developing processing apparatus.

In this case, the front and back surfaces of the semiconductor wafer 3 can be developed in a clean state with less foreign matter attached, and the rebound of the developing solution can be reduced, so that the pattern due to the rebound of the developing solution can be reduced. Shape defects can be prevented.

Also, the rotation processing device can be applied to a cleaning processing device.

That is, the notched semiconductor wafer 3 shown in FIG. 1 is placed at a predetermined position, and the cleaning liquid (hydrofluoric acid solution, buffered hydrofluoric acid solution, hydrochloric acid solution, Ammonia aqueous solution, hydrogen peroxide aqueous solution, and a cleaning solution combining these solutions are applied to the semiconductor wafer 3
Is supplied to the front surface 3a, the back surface 3b, or both surfaces, and the semiconductor wafer 3 is washed.

Then, pure water is supplied to the semiconductor wafer 3 from the dropping nozzle 9 and the thinner supply port 8 to rinse the front surface 3a, the back surface 3b or both surfaces of the semiconductor wafer 3, and then spin dry. Therefore, it is also effective when applied to a single-wafer cleaning processing apparatus.

In this case, since the front and back surfaces of the semiconductor wafer 3 can be cleaned in a clean state with less foreign matter attached, and the splash of the cleaning liquid can be reduced, the pattern shape defects due to the splash of the cleaning liquid can be reduced. Can be prevented.

The method of supporting the semiconductor wafer (plate-like object) described in the first, second or third embodiment is such that it is supported by point contact by the wafer supporting pins which are the supporting members. Like the plate-shaped object holding member of another embodiment shown,
The wafer support pins 4 may have an elongated shape in the diameter direction of the semiconductor wafer 3.

In this case, the semiconductor wafer 3 is supported by line contact instead of point contact, but the contact area with the semiconductor wafer 3 is extremely small.

Therefore, the semiconductor wafer 3 may be supported by either point contact or line contact as long as the contact area with the wafer support pin 4 as a support member is small. It may be supported in combination with line contact.

In the above description, the case where the invention made by the present inventor is mainly applied to a semiconductor wafer manufacturing apparatus which is a field of application which is the background of the invention has been described, but the invention is not limited to this. In the case of liquid crystal substrate manufacturing, magnetic disk manufacturing, optical disk manufacturing, multilayer wiring board manufacturing, etc., when applied to a device that supplies a fluid such as a chemical solution to one or both sides of a plate-like object and performs rotation processing. However, the same effect as described above can be obtained.

[0143]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). The plate-shaped object holding member includes a plate-shaped object support portion that supports the plate-shaped object, and an air flow control means that includes an outer peripheral portion of the plate-shaped object support portion and a ring-shaped plate portion, thereby being formed by the air flow control means. The guide airflow can guide the fluid supplied to one side or both sides of the plate-like object and the airflow formed near the front and back surfaces of the plate-like object and discharge it to the outside of the plate-like object. As a result, it is possible to eliminate a dynamic fluid flow variation factor (fluid spreading amount) and a solvent evaporation amount variation factor that are film formation variation factors of a processing film such as a photoresist film. The accuracy of the film thickness of the film or the like can be maintained with high accuracy.

(2). The airflow control means causes the airflow flowing along the surface of the plate-like object to flow uniformly while being guided in the outer peripheral direction of the plate-like object in one direction and in a radial direction. Can control the flow of. Therefore, when the back surface of the plate-like object is washed, the flow of the fluid and the airflow acting on the front and back surfaces of the plate-like material flow uniformly in the outer peripheral direction, so that the flow of the fluid and the turbulence and retention of the airflow are caused. Can be prevented.

(3). Since it is possible to prevent the flow of the fluid acting on the plate-like object and the turbulence or retention of the air flow, the vector of the fluid or the air flow locally fluctuated by the supporting member supporting the plate-like object is determined. It is possible to prevent a phenomenon that adversely affects the fluid or air flow vector acting on the front and back surfaces. As a result, even if the plate-like object is positioned and supported by the protrusions such as the supporting member, a clean photoresist film can be formed on the surface of the plate-like object with high film thickness accuracy, and the back surface of the plate-like object can be formed. Can be cleanly cleaned.

(4). Since there is no rebounding foreign matter or the like attached to the surface of the plate-like object, a highly pure photoresist film can be formed with high accuracy, and the back surface of the plate-like object can be always kept clean.

(5). The surface of the plate-like material, that is, the air flow acting on the film-forming surface can be uniformly controlled, and turbulent flow and retention areas are not formed near the front and back surfaces of the plate-like material.
It is possible to form a uniform coating film with good film thickness accuracy, because the evaporation rate of the coating liquid such as photoresist on the film-forming surface of the plate-like material is not locally varied.

(6). The air flow control means controls the flow and the air flow of the photoresist liquid acting on the front and back surfaces of the plate-shaped object, so that the photoresist liquid acting on the front and back surfaces of the plate-shaped object due to the change in the air volume of the exhaust gas in the coating cup The influence of air flow can be reduced. As a result, even if the air volume of the exhaust gas in the coating cup is increased instantaneously only at the timing when a large amount of the photoresist liquid is scattered in the initial stage of coating film formation,
The accuracy of the coating film thickness can be maintained with high accuracy, and as a result, it is possible to prevent the splash of foreign matter of the photoresist liquid from adhering to the plate.

(7). In the airflow control means, the guide airflow is provided by providing a plurality of guide plates that divide the gap formed by the outer peripheral portion of the plate-shaped object support portion and the ring-shaped plate portion substantially evenly on the outer peripheral portion. It is possible to further homogenize and stably discharge the air flow or the fluid near the plate-like object that is radially discharged while being guided.

(8). Since the plate-shaped object is supported by the point-contact or line contact, or the combination of point contact and line-contact by the support member provided in the plate-shaped object support portion, the contact area between the plate-shaped object and the support member can be reduced. Can be made smaller. As a result, it is possible to reduce the amount of foreign matter attached to the plate-shaped object holding member including the plate-shaped object supporting portion, which is transferred and adhered to the plate-shaped object, and as a result, it is possible to reduce the number of foreign particles attached to the plate-shaped object. .

(9). Since the contact area between the plate and the supporting member can be reduced, the influence of heat transferred to the plate is small, and it is possible to reduce the local fluctuation of the evaporation rate of the coating liquid due to the heat. A uniform coating film with good film thickness accuracy can be formed.

(10). When the rotation processing device using the plate-shaped object holding member is applied to a development processing device that develops a plate-shaped object such as a semiconductor wafer, the development processing can be performed in a clean state with less foreign matter attached to the front and back surfaces of the plate-shaped object, Since there is no rebound of the developing solution or the like, it is possible to prevent the occurrence of pattern shape defects due to the rebound of the developing solution.

(11). When the rotation processing device using the plate-shaped object holding member is applied to a cleaning processing device for cleaning a plate-shaped object such as a semiconductor wafer, the cleaning process can be performed in a clean state with less foreign matter attached to the front and back surfaces of the plate-shaped object, Since there is no splash of the cleaning liquid or the like, it is possible to prevent the occurrence of pattern shape defects due to the splash of the cleaning liquid.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing an embodiment of the structure of a plate-like object holding member and a rotation processing device according to the present invention.

2A and 2B are views showing an embodiment of the structure of a plate-like object holding member and a rotation processing device according to the present invention, in which FIG. 2A is an enlarged partial plan view and FIG. 2B is a plan view.

FIG. 3 is a perspective view showing an embodiment of the structure of a plate-like object holding member according to the present invention.

FIG. 4 is a diagram showing an example of the structure of a plate-like object holding member according to another embodiment of the present invention, in which (a) is an enlarged partial plan view,
(B) is a sectional view.

FIG. 5 is a diagram showing an example of the structure of a plate-like object holding member according to another embodiment of the present invention, in which (a) is an enlarged partial plan view,
(B) is a sectional view.

FIG. 6 is a plan view showing an example of the structure of a plate-like object holding member according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coating cup (cup member) 2 Wafer chuck part (plate-shaped object support part) 2a Peripheral part 3 Semiconductor wafer (plate-shaped object) 3a Front surface 3b Back surface 3c Notch part 3d Peripheral part 4 Wafer support pin (support member) 5 Ring shape Plate part 6 Wafer positioning pin 7 Thinner liquid (fluid) 8 Thinner liquid supply port 9 Dropping nozzle 10 Photoresist liquid (fluid) 11 Exhaust port 12 Exhaust in coating cup 13 Airflow in coating cup 14 Ejection vector 15 Airflow control means 15a Void 16 Guide plate 17 Guide port 18 Air flow 19 Exhaust means 20 Fluid supply part 20a Driving means 22 Wafer chuck part (plate-like object support part) 22a Outer peripheral part 22b Inner peripheral surface 25 Ring-shaped plate part 25a Inner peripheral surface 34 Discharge vector 35 Air Flow Control Means 35a Void 36 Fixed Rib 38 Air Flow 42 Wafer Chuck Part (Plate Sandwiching member) 42a outer peripheral portion 42b laminar flow forming face 42c void 43 semiconductor wafer (plate-like material) 43a surface 43b back surface 43c orientation flat portion 43d outer periphery 45 ring Joban unit 48 airflow 54 discharged vector 55 airflow control means 55a voids 57 guide opening

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display location G11B 7/26 8721-5D G11B 7/26 H01L 21/027 H01L 21/30 564C

Claims (7)

[Claims] 1. A plate-like object holding member that supports and rotates a plate-like object such as a semiconductor wafer, wherein the plate-like object support part supports the plate-like object, and an outer peripheral part of the plate-like object support part. And an airflow control unit composed of a ring-shaped plate portion provided along the front surface or the back surface of the plate-shaped object facing the outer peripheral portion, and the guide airflow formed by the airflow control unit is A plate shape characterized in that the fluid supplied to one or both sides of the plate object and the airflow formed near the front and back surfaces of the plate object are radially guided and discharged to the outside of the plate object. Object holding member. 2. The plate-shaped object holding member according to claim 1, wherein the plate-shaped object support portion and the ring-shaped plate portion are:
A plate-like object holding member, wherein the diametrical cross-sectional shapes of the respective inner peripheral surfaces facing each other form a similar curve. 3. A plate-like object holding member that supports and rotates a plate-like object such as a semiconductor wafer, the air flow being generated in a gap formed by the plate-like object and supporting the plate-like object. A plate-like object supporting portion having a laminar flow forming surface for making the laminar flow state, and an outer peripheral portion inclined with respect to the laminar flow forming surface in the plate-like object supporting portion, and provided to face the outer peripheral portion. An air flow control means comprising a ring-shaped plate portion, the guide air flow formed by the air flow control means, the fluid supplied to one or both sides of the plate-like object and the front and back surfaces of the plate-like object A plate-like object holding member, characterized in that the air flow formed in the plate is radially guided while being inclined with respect to the laminar flow forming surface and is discharged to the outside of the plate-like object. 4. The plate-like object holding member according to claim 1, wherein in the air flow control means, a gap formed by the outer peripheral portion of the plate-like object supporting portion and the ring-like plate portion. A plate-like object holding member, characterized in that a plurality of guide plates are provided to divide the above-mentioned outer peripheral portion substantially evenly. 5. The plate-shaped object holding member according to claim 1, wherein the air flow control means is formed by the outer peripheral portion of the plate-shaped object support portion and the ring-shaped plate portion. A plate-like object holding member, wherein a void is gradually narrowed toward the outside on the outer peripheral portion. 6. The plate-shaped object holding member according to claim 1, 2, 3, 4 or 5, wherein the plate-shaped object is point-contacted or line-contacted by a support member provided in the plate-shaped object support portion. Alternatively, the plate-like object holding member is supported by a combination of point contact and line contact. 7. A rotation processing apparatus using the plate-shaped object holding member according to claim 1, 2, 3, 4, 5 or 6, wherein the air flow control means is provided on an outer peripheral portion. A member, a cup member that covers the periphery of the plate-shaped object holding member and is provided with at least one exhaust port, an exhaust unit that exhausts the fluid in the cup member through the exhaust port, and the plate-shaped object A fluid supply unit for supplying a fluid through a dropping nozzle, and a drive unit for rotating the plate-shaped member holding member, while rotating the plate-shaped member supported by the plate-shaped member holding member. A rotation processing apparatus, wherein the plate-shaped material is processed by supplying the fluid to the plate-shaped material.