JPH0888083A - Organic electric field light-emitting device - Google Patents
Organic electric field light-emitting deviceInfo
- Publication number
- JPH0888083A JPH0888083A JP6220343A JP22034394A JPH0888083A JP H0888083 A JPH0888083 A JP H0888083A JP 6220343 A JP6220343 A JP 6220343A JP 22034394 A JP22034394 A JP 22034394A JP H0888083 A JPH0888083 A JP H0888083A
- Authority
- JP
- Japan
- Prior art keywords
- group
- organic
- cathode
- light emitting
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- XDDVRYDDMGRFAZ-UHFFFAOYSA-N thiobenzophenone Chemical class C=1C=CC=CC=1C(=S)C1=CC=CC=C1 XDDVRYDDMGRFAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は有機電界発光素子に関す
るものであり、詳しくは、有機化合物から成る発光層に
電界をかけて光を放出する薄膜型デバイスに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device, and more particularly, to a thin film type device which emits light by applying an electric field to a light emitting layer made of an organic compound.
【0002】[0002]
【従来の技術】従来、薄膜型の電界発光(EL)素子と
しては、無機材料のII−VI族化合物半導体であるZ
nS、CaS、SrS等に、発光中心であるMnや希土
類元素(Eu、Ce、Tb、Sm等)をドープしたもの
が一般的であるが、上記の無機材料から作製したEL素
子は、 1)交流駆動が必要(50〜1000Hz)、 2)駆動電圧が高い(〜200V)、 3)フルカラー化が困難(特に青色が問題)、 4)周辺駆動回路のコストが高い、という問題点を有し
ている。2. Description of the Related Art Conventionally, as a thin film type electroluminescent (EL) element, Z which is a II-VI group compound semiconductor of an inorganic material has been used.
In general, nS, CaS, SrS, etc. are doped with Mn or a rare earth element (Eu, Ce, Tb, Sm, etc.), which is the emission center, but EL elements made from the above inorganic materials are 1). AC drive is required (50 to 1000 Hz), 2) high drive voltage (up to 200 V), 3) full colorization is difficult (especially blue is a problem), and 4) peripheral drive circuit costs are high. ing.
【0003】近年、上記問題点の改良のため、有機薄膜
を用いたEL素子の開発が行われるようになった。特
に、発光効率を高めるために電極からのキャリアー注入
の効率向上を目的とした電極種類の最適化を行い、芳香
族ジアミンから成る有機正孔輸送層と8−ヒドロキシキ
ノリンのアルミニウム錯体から成る有機発光層を設けた
有機電界発光素子の開発(Appl.Phys.Let
t.,51巻,913頁,1987年)により、従来の
アントラセン等の単結晶を用いたEL素子と比較して発
光効率の大幅な改善がなされ、実用特性に近づいてい
る。In recent years, in order to improve the above problems, EL devices using organic thin films have been developed. In particular, the electrode type was optimized for the purpose of improving the efficiency of carrier injection from the electrode in order to increase the light emission efficiency, and the organic hole transport layer made of an aromatic diamine and the organic light emission made of an aluminum complex of 8-hydroxyquinoline. Of an organic electroluminescence device having a layer (Appl. Phys. Let
t. , 51, p. 913, 1987), the luminous efficiency has been greatly improved as compared with the conventional EL device using a single crystal such as anthracene, and is close to practical characteristics.
【0004】上記のような低分子材料の他にも、有機発
光層の材料として、ポリ(p−フェニレンビニレン)
(Nature,347巻,539頁,1990年;A
ppl.Phys.Lett.,61巻,2793頁,
1992年)、ポリ[2−メトキシ,5−(2’−エチ
ルヘキソキシ)−1,4−フェニレンビニレン](Ap
pl.Phys.Lett.,58巻,1982頁,1
991年;ThinSolid Films,216
巻,96頁,1992年;Nature,357巻,4
77頁,1992年)、ポリ(3−アルキルチオフェ
ン)(Jpn.J.Appl.Phys,30巻,L1
938頁,1991年;J.Appl.Phys.,7
2巻,564頁,1992年)等の高分子材料の開発
や、ポリビニルカルバゾール等の高分子に低分子の発光
材料と電子移動材料を混合した素子(応用物理,61
巻,1044頁,1992年)の開発も行われている。In addition to the above low molecular weight materials, poly (p-phenylene vinylene) is used as a material for the organic light emitting layer.
(Nature, 347, 539, 1990; A
ppl. Phys. Lett. , 61, 2793,
1992), poly [2-methoxy, 5- (2'-ethylhexoxy) -1,4-phenylenevinylene] (Ap
pl. Phys. Lett. , 58, 1982, 1
991; ThinSolid Films, 216
Volume, 96 pages, 1992; Nature, 357, 4
77, 1992), poly (3-alkylthiophene) (Jpn. J. Appl. Phys, vol. 30, L1.
938, 1991; Appl. Phys. , 7
Vol. 2, p. 564, 1992), etc., and development of devices such as polyvinylcarbazole and other polymers in which low-molecular light emitting materials and electron transfer materials are mixed (Applied Physics, 61).
Vol., P. 1044, 1992).
【0005】以上に示したような有機電界発光素子にお
いては、通常、陽極としてはインジウム錫酸化物(IT
O)のような透明電極が用いられるが、陰極としては電
子注入を効率よく行うために仕事関数の低い金属電極、
例えば、マグネシウム合金やカルシウム等が用いられて
いる。有機電界発光素子の最大の問題点は素子の寿命で
あり、寿命を制限する一つの要因が陰極材料に由来する
ダークスポット(素子の発光部で発光しない部分)の発
生である。ダークスポットとは、有機電界発光素子を長
期間保存する場合、また、長期間駆動させる場合に、有
機電界発光素子内発光面内に発生する非発光の部分をい
う。このダークスポットは、保存及び駆動時に、その数
や大きさが増加して、発光輝度の低下をもたらし、結果
として素子の寿命を制限している。これに対して、陰極
との付着力を向上することを目的とし、陰極と有機発光
層との間に芳香族アミン化合物から成る界面層を設け、
ダークスポットの低減を試みているが(特開平5−04
8075号公報)、実用的なレベルには達していないの
が現状である。In the organic electroluminescent device as described above, indium tin oxide (IT) is usually used as the anode.
A transparent electrode such as O) is used, but as a cathode, a metal electrode having a low work function for efficiently injecting electrons,
For example, magnesium alloy or calcium is used. The biggest problem of the organic electroluminescence device is the life of the device, and one factor that limits the life is the occurrence of dark spots (portions that do not emit light in the light emitting portion of the device) derived from the cathode material. The dark spot refers to a non-light emitting portion generated in the light emitting surface in the organic electroluminescent element when the organic electroluminescent element is stored for a long period of time or is driven for a long period of time. The number and size of the dark spots increase during storage and driving, resulting in a decrease in emission brightness, and as a result, the life of the device is limited. On the other hand, for the purpose of improving the adhesion with the cathode, an interface layer made of an aromatic amine compound is provided between the cathode and the organic light emitting layer,
Attempts to reduce dark spots have been made (JP-A-5-04).
The current situation is that it has not reached a practical level.
【0006】[0006]
【発明が解決しようとする課題】これまでに開示されて
いる有機電界発光素子では、電界発光は陽極から注入さ
れた正孔と陰極から注入された電子との再結合によりも
たらされる。一般に、キャリアの注入は、電子の場合、
陰極と有機発光層との界面における注入障壁を乗り越え
て行われなければならない。この電子注入障壁を低くし
て注入効率を向上させるために、マグネシウム合金やカ
ルシウム等の低い仕事関数の金属電極が陰極として使用
されている。しかしながら、これらの金属材料は有機発
光層との密着性が悪いために有機発光層から剥離した
り、陰極を有機発光層上に蒸着する際や蒸着後にも、陰
極材料と有機発光層材料との間で反応が起き、長期間の
保存中に素子の発光特性の劣化やダークスポットの発生
の原因となる。In the organic electroluminescent devices disclosed so far, electroluminescence is brought about by the recombination of holes injected from the anode and electrons injected from the cathode. In general, the injection of carriers is
It must be done by overcoming the injection barrier at the interface between the cathode and the organic light emitting layer. In order to lower the electron injection barrier and improve the injection efficiency, a metal electrode having a low work function such as magnesium alloy or calcium is used as the cathode. However, since these metal materials have poor adhesion to the organic light emitting layer, they are peeled from the organic light emitting layer, or when the cathode is vapor-deposited on the organic light emitting layer or after vapor deposition, the cathode material and the organic light emitting layer material are A reaction occurs between them, which causes deterioration of the light emitting characteristics of the device and generation of dark spots during long-term storage.
【0007】[0007]
【課題を解決するための手段】本発明者等は上記実状に
鑑み、長期間に亙り安定な発光特性を維持でき、ダーク
スポットの発生を抑制することができる有機電界発光素
子を提供することを目的として鋭意検討した結果、有機
発光層と陰極との間にN−フェニルカルバゾール骨格を
有する化合物を含有する界面層を設け、陰極として銀を
50原子%以上含む混合成分膜を用いることが好適であ
ることを見い出し、本発明を完成するに至った。In view of the above situation, the inventors of the present invention provide an organic electroluminescent device capable of maintaining stable light emitting characteristics for a long period of time and suppressing the generation of dark spots. As a result of earnest studies for the purpose, it is preferable to provide an interface layer containing a compound having an N-phenylcarbazole skeleton between the organic light emitting layer and the cathode, and use a mixed component film containing 50 atomic% or more of silver as the cathode. After finding out that there is something, the present invention has been completed.
【0008】すなわち、本発明の要旨は、基板上に、陽
極と陰極とに挟持された有機発光層を設けてなる有機電
界発光素子であって、有機発光層と陰極との間にN−フ
ェニルカルバゾール骨格を有する化合物を含有する層が
設けられており、陰極が銀を50原子%以上含有する混
合成分膜であることを特徴とする有機電界発光素子、に
存する。That is, the gist of the present invention is an organic electroluminescence device comprising an organic light emitting layer sandwiched between an anode and a cathode on a substrate, wherein N-phenyl is provided between the organic light emitting layer and the cathode. An organic electroluminescent device characterized in that a layer containing a compound having a carbazole skeleton is provided, and the cathode is a mixed component film containing 50 atomic% or more of silver.
【0009】以下、本発明の有機電界発光素子について
添付図面に従い説明する。図1は、本発明の有機電界発
光素子の構造例を模式的に示す断面図であり、1は基
板、2は陽極、3は有機発光層、4は界面層、5は陰極
を各々表わす。基板1は、本発明の有機電界発光素子の
支持体となるものであり、石英やガラスの板、金属板や
金属箔、プラスチックフィルムやシート等が用いられる
が、ガラス板や、ポリエステル、ポリメチルメタアクリ
レート、ポリカーボネート、ポリサルホン等の透明な合
成樹脂基板が好ましい。The organic electroluminescent device of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view schematically showing a structural example of the organic electroluminescent device of the present invention, in which 1 is a substrate, 2 is an anode, 3 is an organic light emitting layer, 4 is an interface layer, and 5 is a cathode. The substrate 1 serves as a support for the organic electroluminescent element of the present invention, and a plate of quartz or glass, a metal plate or metal foil, a plastic film or sheet, or the like is used, but a glass plate, polyester, polymethyl A transparent synthetic resin substrate such as methacrylate, polycarbonate and polysulfone is preferable.
【0010】基板1上には陽極2が設けられるが、陽極
2は有機発光層への正孔注入の役割を果たすものであ
る。この陽極は、通常、アルミニウム、金、銀、ニッケ
ル、パラジウム、テルル等の金属、インジウム及び/又
はスズの酸化物等の金属酸化物やヨウ化銅、カーボンブ
ラック、あるいはポリ(3−メチルチオフェン)等の導
電性高分子等により構成される。陽極の形成は通常、ス
パッタリング法、真空蒸着法等により行われることが多
いが、銀等の金属微粒子あるいはヨウ化銅、カーボンブ
ラック、導電性の金属酸化物微粒子、導電性高分子微粉
末等の場合には、適当なバインダー樹脂溶液に分散し、
基板上に塗布することにより形成することもできる。さ
らに、導電性高分子の場合は電解重合により直接基板上
に薄膜を形成したり、基板上に塗布して形成することも
できる(Appl.Phys.Lett.,60巻,2
711頁,1992年)。上記の陽極は異なる物質で積
層することも可能である。陽極2の厚みは、必要とする
透明性により異なるが、透明性が必要とされる場合は、
通常、可視光の透過率が60%以上、好ましくは80%
以上透過することが望ましく、この場合、厚みは、通
常、5〜1000nm、好ましくは10〜500nm程
度とする。An anode 2 is provided on the substrate 1, and the anode 2 plays a role of injecting holes into the organic light emitting layer. This anode is usually a metal such as aluminum, gold, silver, nickel, palladium, tellurium, a metal oxide such as an oxide of indium and / or tin, copper iodide, carbon black, or poly (3-methylthiophene). It is composed of a conductive polymer or the like. The anode is usually formed by a sputtering method, a vacuum deposition method or the like, but metal fine particles such as silver or copper iodide, carbon black, conductive metal oxide fine particles, conductive polymer fine powder, etc. In this case, disperse in a suitable binder resin solution,
It can also be formed by coating on a substrate. Further, in the case of a conductive polymer, a thin film can be directly formed on the substrate by electrolytic polymerization, or can be formed by coating on the substrate (Appl. Phys. Lett., Volume 60, 2).
711, 1992). The above anodes can be laminated with different materials. The thickness of the anode 2 depends on the required transparency, but when transparency is required,
Generally, visible light transmittance is 60% or more, preferably 80%
It is desirable that the light is transmitted as described above. In this case, the thickness is usually 5 to 1000 nm, preferably 10 to 500 nm.
【0011】不透明でよい場合は陽極2は基板1を兼ね
ていてもよい。また、さらには上記の陽極の上に異なる
導電材料を積層することも可能である。陽極2の上には
有機発光層3が設けられるが、有機発光層3は、電界を
与えられた電極間において、陽極から注入された正孔と
陰極から注入された電子を効率よく輸送して再結合さ
せ、かつ、再結合により効率よく発光する材料から形成
される。通常、この有機発光層3は発光効率の向上のた
めに、図2に示すように、正孔輸送層3aと電子輸送層
3bに分割して機能分離型にすることが行われる(Ap
pl.Phys.Lett.,51巻,913頁,19
87年)。If it is opaque, the anode 2 may also serve as the substrate 1. Further, it is also possible to stack different conductive materials on the anode. An organic light emitting layer 3 is provided on the anode 2, and the organic light emitting layer 3 efficiently transports holes injected from the anode and electrons injected from the cathode between the electrodes to which an electric field is applied. It is made of a material that is recombined and emits light efficiently by the recombination. Usually, in order to improve the luminous efficiency, the organic light emitting layer 3 is divided into a hole transport layer 3a and an electron transport layer 3b as shown in FIG.
pl. Phys. Lett. , 51, 913, 19
1987).
【0012】上記の機能分離型素子において、正孔輸送
材料としては、陽極2からの正孔注入効率が高く、か
つ、注入された正孔を効率よく輸送することができる材
料であることが必要である。そのためには、イオン化ポ
テンシャルが小さく、しかも正孔移動度が大きく、さら
に安定性に優れ、トラップとなる不純物が製造時や使用
時に発生しにくいことが要求される。In the above-mentioned function-separated device, the hole transport material must have a high hole injection efficiency from the anode 2 and can efficiently transport the injected holes. Is. For that purpose, it is required that the ionization potential is small, the hole mobility is large, the stability is excellent, and the impurities serving as traps are not easily generated during manufacturing or use.
【0013】このような正孔輸送材料としては、例え
ば、1,1−ビス(4−ジ−p−トリルアミノフェニ
ル)シクロヘキサン等の3級芳香族アミンユニットを連
結した芳香族ジアミン化合物(特開昭59−19439
3号公報)、4,4’−ビス[(N−1−ナフチル)−
N−フェニルアミノ]ビフェニルで代表される2個以上
の3級アミンを含み2個以上の縮合芳香族環が窒素原子
に置換した芳香族アミン(特開平5−234681号公
報)、トリフェニルベンゼンの誘導体でスターバースト
構造を有する芳香族トリアミン(米国特許第4,92
3,774号)、N,N’−ジフェニル−N,N’−ビ
ス(3−メチルフェニル)−(1,1’−ビフェニル)
−4,4’−ジアミン等の芳香族ジアミン(米国特許第
4,764,625号)、α,α,α’,α’−テトラ
メチル−α,α’−ビス(4−ジ−p−トリルアミノフ
ェニル)−p−キシレン(特開平3−269084号公
報)、分子全体として立体的に非対称なトリフェニルア
ミン誘導体(特開平4−129271号公報)、ピレニ
ル基に芳香族ジアミノ基が複数個置換した化合物(特開
平4−175395号公報)、エチレン基で3級芳香族
アミンユニットを連結した芳香族ジアミン(特開平4−
264189号公報)、スチリル構造を有する芳香族ジ
アミン(特開平4−290851号公報)、チオフェン
基で芳香族3級アミンユニットを連結したもの(特開平
4−304466号公報)、スターバースト型芳香族ト
リアミン(特開平4−308688号公報)、ベンジル
フェニル化合物(特開平4−364153号公報)、フ
ルオレン基で3級アミンを連結したもの(特開平5−2
5473号公報)、トリアミン化合物(特開平5−23
9455号公報)、ビスジピリジルアミノビフェニル
(特開平5−320634号公報)、N,N,N−トリ
フェニルアミン誘導体(特開平6−1972号公報)、
フェノキサジン構造を有する芳香族ジアミン(特願平5
−290728号)、ジアミノフェニルフェナントリジ
ン誘導体(特願平6−45669号)に示される芳香族
アミン系化合物、ヒドラゾン化合物(特開平2−311
591号公報)、シラザン化合物(米国特許第4,95
0,950号公報)、シラナミン誘導体(特開平6−4
9079号公報)、ホスファミン誘導体(特開平6−2
5659号公報)、キナクリドン化合物等が挙げられ
る。これらの化合物は、単独で用いてもよいし、必要に
応じて、各々、混合して用いてもよい。As such a hole transport material, for example, an aromatic diamine compound in which a tertiary aromatic amine unit such as 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane is linked (Japanese Patent Application Laid-Open No. 2000-242242) Sho 59-19439
3), 4,4'-bis [(N-1-naphthyl)-
Aromatic amines containing two or more tertiary amines represented by N-phenylamino] biphenyl and having two or more condensed aromatic rings substituted with nitrogen atoms (Japanese Patent Laid-Open No. 5-234681) and triphenylbenzene. An aromatic triamine having a starburst structure as a derivative (US Pat.
3,774), N, N'-diphenyl-N, N'-bis (3-methylphenyl)-(1,1'-biphenyl)
Aromatic diamines such as -4,4'-diamine (U.S. Pat. No. 4,764,625), α, α, α ', α'-tetramethyl-α, α'-bis (4-di-p- Tolylaminophenyl) -p-xylene (JP-A-3-269084), sterically asymmetric triphenylamine derivative as a whole molecule (JP-A-4-12971), pyrenyl group and a plurality of aromatic diamino groups. Substituted compound (JP-A-4-175395) and aromatic diamine in which a tertiary aromatic amine unit is linked with an ethylene group (JP-A-4-175395).
264189), aromatic diamines having a styryl structure (JP-A-4-290851), those in which aromatic tertiary amine units are linked by a thiophene group (JP-A-4-304466), and starburst type aromatics. Triamine (JP-A-4-308688), benzylphenyl compound (JP-A-4-364153), and tertiary amine linked by a fluorene group (JP-A 5-2).
5473), triamine compounds (JP-A-5-23)
9455), bisdipyridylaminobiphenyl (JP-A-5-320634), N, N, N-triphenylamine derivative (JP-A-6-1972),
Aromatic diamine having phenoxazine structure (Japanese Patent Application No.
-290728) and diaminophenylphenanthridine derivatives (Japanese Patent Application No. 6-45669), hydrazone compounds (Japanese Patent Application Laid-Open No. 2-311).
591), a silazane compound (US Pat. No. 4,955).
No. 0,950), silanamin derivatives (JP-A-6-4).
No. 9079), phosphamine derivatives (JP-A-6-2).
5659), quinacridone compounds and the like. These compounds may be used alone, or may be used as a mixture if necessary.
【0014】上記の化合物以外に、正孔輸送性の高分子
である、ポリビニルカルバゾールやポリシラン(App
l.Phys.Lett.,59巻,2760頁,19
91年等が挙げられる)、ポリフォスファゼン(特開平
5−310949号公報)、ポリアミド(特開平5−3
10949号公報)、ポリビニルトリフェニルアミン
(特願平5−205377)、トリフェニルアミン骨格
を有する高分子(特開平4−133065号公報)、ト
リフェニルアミン単位をメチレン基等で連結した高分子
(Synthetic Metals,55−57巻,
4163頁,1993年)、芳香族アミンを含有するポ
リメタクリレート(J.Polym.Sci.,Pol
ym.Chem.Ed.,21巻,969頁,1983
年)等の高分子材料が挙げられる。In addition to the compounds mentioned above, polyvinyl carbazole and polysilane (App
l. Phys. Lett. , 59, 2760, 19
1991, etc.), polyphosphazene (JP-A-5-310949), polyamide (JP-A-5-3).
No. 10949), polyvinyl triphenylamine (Japanese Patent Application No. 5-205377), a polymer having a triphenylamine skeleton (Japanese Patent Laid-Open No. 1333065), and a polymer in which triphenylamine units are linked by a methylene group or the like ( Synthetic Metals, 55-57,
4163, 1993), polymethacrylates containing aromatic amines (J. Polym. Sci., Pol.
ym. Chem. Ed. , 21: 969, 1983
Years) and other polymeric materials.
【0015】上記の有機正孔輸送材料は塗布法あるいは
真空蒸着法により前記陽極2上に積層することにより正
孔輸送層3aを形成する。塗布法の場合は、有機正孔輸
送化合物を1種又は2種以上と必要により正孔のトラッ
プにならないバインダー樹脂や、レベリング剤等の塗布
性改良剤等の添加剤を添加し溶解した塗布溶液を調製
し、スピンコート法等の方法により陽極2上に塗布し、
乾燥して有機正孔輸送層3aを形成する。バインダー樹
脂としては、ポリカーボネート、ポリアリレート、ポリ
エステル等が挙げられる。バインダー樹脂は添加量が多
いと正孔移動度を低下させるので、少ない方が望まし
く、通常、50重量%以下が好ましい。The above organic hole transport material is laminated on the anode 2 by a coating method or a vacuum deposition method to form a hole transport layer 3a. In the case of a coating method, a coating solution prepared by adding and dissolving one or more organic hole transporting compounds, if necessary, a binder resin that does not trap holes and a coating property improving agent such as a leveling agent. Is prepared and applied onto the anode 2 by a method such as spin coating,
The organic hole transport layer 3a is formed by drying. Examples of the binder resin include polycarbonate, polyarylate, polyester and the like. If the addition amount of the binder resin is large, the hole mobility is lowered.
【0016】真空蒸着法の場合には、有機正孔輸送材料
を真空容器内に設置されたルツボに入れ、真空容器内を
適当な真空ポンプで10-6Torrにまで排気した後、
ルツボを加熱して、正孔輸送材料を蒸発させ、ルツボと
向い合って置かれた基板上に層を形成する。上記正孔輸
送層3aを形成する場合、さらに、アクセプタとして、
芳香族カルボン酸の金属錯体及び/又は金属塩(特開平
4−320484号公報)、ベンゾフェノン誘導体およ
びチオベンゾフェノン誘導体(特開平5−295361
号公報)、フラーレン類(特開平5−331458号公
報)を10-3〜10重量%の濃度でドープして、フリー
キャリアとしての正孔を生成させ、低電圧駆動とするこ
とが可能である。In the case of the vacuum deposition method, the organic hole transporting material is placed in a crucible installed in a vacuum container, the interior of the vacuum container is evacuated to 10 -6 Torr by an appropriate vacuum pump,
The crucible is heated to evaporate the hole transport material and form a layer on the substrate that faces the crucible. When forming the hole transport layer 3a, further, as an acceptor,
Aromatic carboxylic acid metal complex and / or metal salt (JP-A-4-320484), benzophenone derivative and thiobenzophenone derivative (JP-A-5-295361).
No.), fullerenes (Japanese Patent Laid-Open No. 5-331458) are doped at a concentration of 10 −3 to 10% by weight to generate holes as free carriers, and low voltage driving is possible. .
【0017】正孔輸送層3aの膜厚は、通常、10〜3
00nm、好ましくは30〜100nmである。このよ
うに薄い膜を一様に形成するためには、真空蒸着法がよ
く用いられる。正孔輸送層3aの材料としては有機化合
物の代わりに無機材料を使用することも可能である。無
機材料に要求される条件は、有機正孔輸送化合物と同じ
である。正孔輸送層3aに用いられる無機材料として
は、p型水素化非晶質シリコン、p型水素化非晶質炭化
シリコン、p型水素化微結晶性炭化シリコン、あるい
は、p型硫化亜鉛、p型セレン化亜鉛等が挙げられる。
これらの無機正孔輸送層はCVD法、プラズマCVD
法、真空蒸着法、スパッタ法等により形成される。The thickness of the hole transport layer 3a is usually 10-3.
00 nm, preferably 30 to 100 nm. In order to uniformly form such a thin film, the vacuum evaporation method is often used. As the material of the hole transport layer 3a, it is possible to use an inorganic material instead of the organic compound. The conditions required for the inorganic material are the same as those for the organic hole transport compound. Examples of the inorganic material used for the hole transport layer 3a include p-type hydrogenated amorphous silicon, p-type hydrogenated amorphous silicon carbide, p-type hydrogenated microcrystalline silicon carbide, p-type zinc sulfide, and p-type zinc sulfide. Examples include type zinc selenide.
These inorganic hole transport layers are formed by CVD method, plasma CVD
Method, vacuum deposition method, sputtering method or the like.
【0018】無機正孔輸送層の膜厚も有機正孔輸送層と
同様に、通常、10〜300nm、好ましくは30〜1
00nmである。正孔輸送層3aの上には電子輸送層3
bが設けられるが、電子輸送層3bは、電界を与えられ
た電極間において陰極からの電子を効率よく正孔輸送層
3aの方向に輸送することができる化合物より形成され
る。The thickness of the inorganic hole transporting layer is usually 10 to 300 nm, preferably 30 to 1 like the organic hole transporting layer.
00 nm. The electron transport layer 3 is formed on the hole transport layer 3a.
b is provided, but the electron transport layer 3b is formed of a compound capable of efficiently transporting electrons from the cathode toward the hole transport layer 3a between the electrodes to which an electric field is applied.
【0019】有機電子輸送化合物としては、界面層4か
らの電子注入効率が高く、かつ、注入された電子を効率
よく輸送することができる化合物であることが必要であ
る。そのためには、電子親和力が大きく、しかも電子移
動度が大きく、さらに安定性にすぐれトラップとなる不
純物が製造時や使用時に発生しにくい化合物であること
が要求される。The organic electron transport compound needs to be a compound having a high electron injection efficiency from the interface layer 4 and capable of efficiently transporting the injected electrons. For that purpose, it is required that the compound has a high electron affinity, a high electron mobility, excellent stability, and an impurity that becomes a trap and is less likely to be generated at the time of production or use.
【0020】このような条件を満たす材料としては、テ
トラフェニルブタジエン等の芳香族化合物(特開昭57
−51781号公報)、8−ヒドロキシキノリンのアル
ミニウム錯体等の金属錯体(特開昭59−194393
号公報)、シクロペンタジエン誘導体(特開平2−28
9675号公報)、ペリノン誘導体(特開平2−289
676号公報)、オキサジアゾール誘導体(特開平2−
216791号公報)、ビススチリルベンゼン誘導体
(特開平1−245087号公報、同2−222484
号公報)、ペリレン誘導体(特開平2−189890号
公報、同3−791号公報)、クマリン化合物(特開平
2−191694号公報、同3−792号公報)、希土
類錯体(特開平1−256584号公報)、ジスチリル
ピラジン誘導体(特開平2−252793号公報)、p
−フェニレン化合物(特開平3−33183号公報)、
チアジアゾロピリジン誘導体(特開平3−37292号
公報)、ピロロピリジン誘導体(特開平3−37293
号公報)、ナフチリジン誘導体(特開平3−20398
2号公報)等が挙げられる。As a material satisfying such a condition, an aromatic compound such as tetraphenyl butadiene (Japanese Patent Laid-Open No. Sho 57-57)
No. 51781), a metal complex such as an aluminum complex of 8-hydroxyquinoline (JP-A-59-194393).
JP), a cyclopentadiene derivative (JP-A-2-28)
9675), perinone derivatives (JP-A-2-289)
676), oxadiazole derivatives (JP-A-2-
No. 216791), and bisstyrylbenzene derivatives (JP-A Nos. 1-245087 and 2-222484).
No.), perylene derivatives (JP-A-2-189890, JP-A-3-791), coumarin compounds (JP-A-2-191694, JP-A-3-792), and rare earth complexes (JP-A-1-256584). JP-A No. 2-252793), p.
A phenylene compound (JP-A-3-33183),
Thiadiazolopyridine derivative (JP-A-3-37292), pyrrolopyridine derivative (JP-A-3-37293)
JP), naphthyridine derivatives (JP-A-3-20398).
No. 2) and the like.
【0021】これらの化合物を用いた電子輸送層3b
は、電子を輸送する役割と、正孔と電子の再結合の際に
発光をもたらす役割を同時に果している。有機正孔輸送
層3aが発光機能を有する場合は、電子輸送層3bは電
子を輸送する役割だけを果たす。素子の発光効率を向上
させるとともに発光色を変える目的で、例えば、8−ヒ
ドロキシキノリンのアルミニウム錯体をホスト材料とし
て、クマリン等のレーザ用蛍光色素をドープすること
(J.Appl.Phys.,65巻,3610頁,1
989年)も行われている。本発明においても上記の有
機電子輸送材料をホスト材料として各種の蛍光色素を1
0-3〜10モル%ドープすることにより、素子の発光特
性をさらに向上させることができる。電子輸送層3bの
膜厚は、通常、10〜200nm、好ましくは30〜1
00nmである。Electron transport layer 3b using these compounds
Simultaneously plays a role of transporting electrons and a role of causing light emission upon recombination of holes and electrons. When the organic hole transport layer 3a has a light emitting function, the electron transport layer 3b serves only to transport electrons. For the purpose of improving the luminous efficiency of the device and changing the luminescent color, for example, by doping an aluminum complex of 8-hydroxyquinoline as a host material with a fluorescent dye for laser such as coumarin (J. Appl. Phys., Vol. 65). , 3610, 1
989) is also being conducted. Also in the present invention, various fluorescent dyes can be used as a host material by using the above-mentioned organic electron transport material as a host material.
By doping 0 −3 to 10 mol%, the emission characteristics of the device can be further improved. The thickness of the electron transport layer 3b is usually 10 to 200 nm, preferably 30 to 1
00 nm.
【0022】有機電子輸送層も有機正孔輸送層と同様の
方法で形成することができるが、通常は真空蒸着法が用
いられる。有機電界発光素子の発光効率をさらに向上さ
せる方法として、図3に示すように電子輸送層3bの上
にさらに他の電子輸送層3cを積層することが考えられ
る(図3参照)。この電子輸送層3cに用いられる化合
物には、陰極からの電子注入が容易で、電子の輸送能力
がさらに大きいことが要求される。このような電子輸送
材料としては、The organic electron transport layer can be formed in the same manner as the organic hole transport layer, but the vacuum vapor deposition method is usually used. As a method for further improving the luminous efficiency of the organic electroluminescent device, it is conceivable to stack another electron transport layer 3c on the electron transport layer 3b as shown in FIG. 3 (see FIG. 3). The compound used for the electron transport layer 3c is required to be capable of easily injecting electrons from the cathode and have a higher electron transport capability. As such an electron transport material,
【0023】[0023]
【化4】 [Chemical 4]
【0024】[0024]
【化5】 [Chemical 5]
【0025】等のオキサジアゾール誘導体(Appl.
Phys.Lett.,55巻,1489頁,1989
年;Jpn.J.Appl.Phys.,31巻,18
12頁,1992年)やそれらをポリメチルメタアクリ
レート等の樹脂に分散した系(Appl.Phys.L
ett.,61巻,2793頁,1992年)、又はn
型水素化非晶質炭化シリコン、n型硫化亜鉛、n型セレ
ン化亜鉛等が挙げられる。電子輸送層3cの膜厚は、通
常、5〜200nm、好ましくは10〜100nmであ
る。Oxadiazole derivatives such as (Appl.
Phys. Lett. , 55, 1489, 1989
Year; Jpn. J. Appl. Phys. , Volume 31, 18
P. 12, 1992) or a system (Appl. Phys. L) in which they are dispersed in a resin such as polymethylmethacrylate.
ett. , 61, 2793, 1992), or n
Examples include hydrogenated amorphous silicon carbide, n-type zinc sulfide, and n-type zinc selenide. The thickness of the electron transport layer 3c is usually 5 to 200 nm, preferably 10 to 100 nm.
【0026】また、機能分離を行わない単層型の有機発
光層3としては、先に挙げたポリ(p−フェニレンビニ
レン)(Nature,347巻,539頁,1990
年;Appl.Phys.Lett.,61巻,279
3頁,1992年)、ポリ[2−メトキシ,5−(2’
−エチルヘキソキシ)−1,4−フェニレンビニレン]
(Appl.Phys.Lett.,58巻,1982
頁,1991年;Thin Solid Films,
216巻,96頁,1992年;Nature,357
巻,477頁,1992年)、ポリ(3−アルキルチオ
フェン)(Jpn.J.Appl.Phys,30巻,
L1938頁,1991年;J.Appl.Phy
s.,72巻,564頁,1992年)等の高分子材料
や、ポリビニルカルバゾール等の高分子に発光材料と電
子移動材料を混合した系(応用物理,61巻,1044
頁,1992年)等がある。As the single-layer type organic light emitting layer 3 which does not perform the function separation, the above-mentioned poly (p-phenylene vinylene) (Nature, 347, 539, 1990) is used.
Year; Appl. Phys. Lett. , Volume 61, 279
P. 3, 1992), poly [2-methoxy, 5- (2 '
-Ethylhexoxy) -1,4-phenylene vinylene]
(Appl. Phys. Lett., 58, 1982.
P., 1991; Thin Solid Films,
216, 96, 1992; Nature, 357.
Vol., 477, 1992), poly (3-alkylthiophene) (Jpn. J. Appl. Phys, vol. 30,
L 1938, 1991; Appl. Phy
s. , Vol. 72, p. 564, 1992), or a system in which a light emitting material and an electron transfer material are mixed with a polymer such as polyvinylcarbazole (Applied Physics, 61, 1044).
Page, 1992) etc.
【0027】有機発光層の上に界面層4が設けられる。
界面層の役割としては、有機発光層との親和性があると
同時に陰極との密着性がよく、かつ、化学的に安定で陰
極形成時及び/又は形成後の有機発光層と陰極の反応を
抑制する効果を有することが挙げられる。また、均一な
薄膜形状を与えることも陰極との密着性の点で重要であ
る。このような役割を果たす材料として、N−フェニル
カルバゾール骨格を用いる。An interface layer 4 is provided on the organic light emitting layer.
The role of the interface layer is that it has an affinity with the organic light-emitting layer and at the same time has good adhesion to the cathode, and is chemically stable to allow the reaction between the organic light-emitting layer and the cathode during and / or after formation of the cathode. It has a suppressing effect. It is also important to provide a uniform thin film shape from the viewpoint of adhesion with the cathode. An N-phenylcarbazole skeleton is used as a material that plays such a role.
【0028】N−フェニルカルバゾール骨格を有する化
合物から成る界面層は、前述の有機正孔輸送材料と同様
に、塗布法あるいは真空蒸着法により形成される。N−
フェニルカルバゾール骨格を有する化合物で好適なもの
としては、下記一般式(I)に示すものが挙げられる。The interface layer made of a compound having an N-phenylcarbazole skeleton is formed by a coating method or a vacuum vapor deposition method, like the organic hole transport material described above. N-
Suitable compounds having a phenylcarbazole skeleton include those represented by the following general formula (I).
【0029】[0029]
【化6】 [Chemical 6]
【0030】上記一般式(I)において、Ar1 及びA
r2 は、各々独立して、少なくとも1つが下記一般式
(III)の中から選ばれるN−フェニルカルバゾール
骨格を有する基である。In the above general formula (I), Ar 1 and A
Each r 2 is independently a group having at least one N-phenylcarbazole skeleton selected from the following general formula (III).
【0031】[0031]
【化7】 [Chemical 7]
【0032】上記一般式(III)において、R1 乃至
R12は、各々独立して、好ましくは、水素原子、ニトロ
基、ハロゲン原子;メチル基、エチル基等の炭素数1〜
6のアルキル基;α−ハロアルキル基;ビニル基等のア
ルケニル基;メトキシカルボニル基、エトキシカルボニ
ル基等の炭素数1〜6のアルコキシカルボニル基;メト
キシ基、エトキシ基等の炭素数1〜6のアルコキシ基;
フェノキシ基、ベンジルオキシ基等のアリールオキシ
基;ジエチルアミノ基、ジイソプロピルアミノ基等のジ
アルキルアミノ基、ジフェニルアミノ基等のジアリール
アミノ基、水酸基であり、またR4 及びR5 、R5 及び
R6 、R7 及びR8 、R8 及びR9 は、各々結合して環
を形成していてもよく、例えば、好ましくは、ベンゼン
環、ピリジン環、ピロール環等の芳香族環を形成してい
てもよい。In the above general formula (III), R 1 to R 12 are each independently preferably a hydrogen atom, a nitro group, a halogen atom; a C 1 -C 1 group such as a methyl group or an ethyl group.
6 alkyl group; α-haloalkyl group; alkenyl group such as vinyl group; alkoxycarbonyl group having 1 to 6 carbon atoms such as methoxycarbonyl group and ethoxycarbonyl group; alkoxy having 1 to 6 carbon atoms such as methoxy group and ethoxy group Group;
An aryloxy group such as a phenoxy group and a benzyloxy group; a dialkylamino group such as a diethylamino group and a diisopropylamino group, a diarylamino group such as a diphenylamino group and a hydroxyl group, and R 4 and R 5 , R 5 and R 6 , R 7 and R 8 , R 8 and R 9 may be bonded to each other to form a ring, for example, preferably an aromatic ring such as a benzene ring, a pyridine ring or a pyrrole ring may be formed. Good.
【0033】前記一般式(III)で示されるN−フェ
ニルカルバゾール骨格を有する基の主な具体例を以下の
表に示すが、これらに限定するものではない。Specific examples of the main group having an N-phenylcarbazole skeleton represented by the general formula (III) are shown in the following table, but not limited thereto.
【0034】[0034]
【表1】 [Table 1]
【0035】[0035]
【表2】 [Table 2]
【0036】[0036]
【表3】 [Table 3]
【0037】[0037]
【表4】 [Table 4]
【0038】[0038]
【表5】 [Table 5]
【0039】[0039]
【表6】 [Table 6]
【0040】[0040]
【表7】 [Table 7]
【0041】[0041]
【表8】 [Table 8]
【0042】[0042]
【表9】 [Table 9]
【0043】上記一般式(I)において、Ar1 及びA
r2 が、N−フェニルカルバゾール骨格を有する基でな
い場合は、窒素原子及び少なくとも3個の芳香族環を有
する基を表し、好ましくは、以下に示す基が挙げられ
る。In the above general formula (I), Ar 1 and A
When r 2 is not a group having an N-phenylcarbazole skeleton, it represents a group having a nitrogen atom and at least three aromatic rings, and the following groups are preferable.
【0044】[0044]
【化8】 Embedded image
【0045】Xは、好ましくは、−CH2 −、−CH2
CH2−、−CH2CH2CH2 −等の置換基を有してい
てもよいアルキレン基;シクロヘキシレン基等のシクロ
アルキレン基;−CH=CH−、−C(CH3 )=CH
−、−CH2 −CH=CH−CH 2 −、−CH=CH−
CH=CH−等の置換基を有していてもよいアルケニレ
ン基;フェニレン基、ナフチレン基、フェナンスレン基
等の置換基を有していてもよいアリーレン基、2価のカ
ルボニル基、又は、直接結合を表す。X is preferably --CH.2-, -CH2
CH2-, -CH2CH2CH2Has a substituent such as-
Optionally an alkylene group; cyclo such as cyclohexylene group
Alkylene group; -CH = CH-, -C (CH3) = CH
-, -CH2-CH = CH-CH 2-, -CH = CH-
Alkenylene which may have a substituent such as CH = CH-
Group; phenylene group, naphthylene group, phenanthrene group
An arylene group which may have a substituent such as
It represents a carbonyl group or a direct bond.
【0046】次に、前記一般式(I)で示される化合物
の主な具体例を以下の表1に示すが、これらに限定する
ものではない。Next, the main specific examples of the compound represented by the general formula (I) are shown in Table 1 below, but the invention is not limited thereto.
【0047】[0047]
【表10】 [Table 10]
【0048】[0048]
【表11】 [Table 11]
【0049】[0049]
【表12】 [Table 12]
【0050】N−フェニルカルバゾール骨格を有する化
合物で、他の好適なものとして、下記一般式(II)に
示すものが挙げられる。Other suitable compounds having an N-phenylcarbazole skeleton include compounds represented by the following general formula (II).
【0051】[0051]
【化9】 [Chemical 9]
【0052】上記一般式(II)において、Ar3 、A
r4 及びAr5 は、各々独立して、少なくとも1つが前
記一般式(III)の中から選ばれるN−フェニルカル
バゾール骨格を有する基を表し、N−フェニルカルバゾ
ール骨格でない場合は、窒素原子及び少なくとも3個の
芳香族環を有する基を表し、いずれの場合においても、
好ましくは、前記一般式(I)でAr1 及びAr2 につ
いて示された基から選ばれる。In the above general formula (II), Ar 3 , A
r 4 and Ar 5 each independently represent a group having at least one N-phenylcarbazole skeleton selected from the general formula (III), and when it is not an N-phenylcarbazole skeleton, a nitrogen atom and at least Represents a group having three aromatic rings, and in any case,
It is preferably selected from the groups shown for Ar 1 and Ar 2 in the general formula (I).
【0053】上記一般式(II)において、Yは3価の
芳香族環、3価のシクロアルキル環又は窒素原子を表
し、好ましくは、−CH=;1,3,5の位置の水素原
子を除いたベンゼン残基;1,3,5の位置の水素原子
を除いたシクロヘキサン残基;窒素原子を表す。次に、
前記一般式(II)で示される化合物の主な具体例を以
下の表に示すが、これらに限定するものではない。In the above general formula (II), Y represents a trivalent aromatic ring, a trivalent cycloalkyl ring or a nitrogen atom, preferably -CH =; The removed benzene residue; the cyclohexane residue from which the hydrogen atoms at the 1, 3, 5 positions have been removed; and the nitrogen atom. next,
Specific examples of the compound represented by the general formula (II) are shown below, but the invention is not limited thereto.
【0054】[0054]
【表13】 [Table 13]
【0055】[0055]
【表14】 [Table 14]
【0056】[0056]
【表15】 [Table 15]
【0057】上記に示したN−フェニルカルバゾール骨
格を有する化合物を界面層として形成する場合、これら
の化合物を二種類以上混合して用いてもよい。また界面
層の膜の安定性を向上させる目的で他の蛍光色素、発光
材料等を混合してもよい。これらの混合する蛍光色素、
発光材料等としては、例えば、芳香族アミンからなる化
合物、クマリン誘導体等のレーザー用色素、ペリレン、
ルブレン等の多環芳香族色素、キナクリドン等の有機顔
料、8−ヒドロキシキノリン金属錯体等が挙げられる。When the compound having the N-phenylcarbazole skeleton shown above is formed as the interface layer, two or more kinds of these compounds may be mixed and used. Further, other fluorescent dyes, light emitting materials and the like may be mixed for the purpose of improving the stability of the film of the interface layer. These mixed fluorescent dyes,
Examples of the light emitting material and the like include a compound composed of an aromatic amine, a laser dye such as a coumarin derivative, and perylene,
Examples thereof include polycyclic aromatic dyes such as rubrene, organic pigments such as quinacridone, and 8-hydroxyquinoline metal complex.
【0058】N−フェニルカルバゾール骨格を有する化
合物を含有する界面層を有する本発明における有機電界
発光素子は、以下に示すような層構成のものが挙げられ
る。 陽極/有機発光層/界面層/陰極 陽極/高分子から成る有機発光層/界面層/陰極 陽極/高分子に分散させた有機発光層/界面層/陰極 陽極/正孔輸送層/有機電子輸送性発光層/界面層/陰
極 陽極/有機正孔輸送性発光層/有機電子輸送層/界面層
/陰極 陽極/正孔輸送層/有機電子輸送性発光層/界面層/陰
極 陽極/正孔輸送層/有機電子輸送性発光層/電子輸送層
/界面層/陰極 界面層4の膜厚は、通常、1〜100nm、好ましくは
5〜50nmである。The organic electroluminescent element of the present invention having an interface layer containing a compound having an N-phenylcarbazole skeleton has the following layer structure. Anode / organic light emitting layer / interface layer / cathode Anode / polymer organic light emitting layer / interface layer / cathode Anode / polymer dispersed organic light emitting layer / interface layer / cathode Anode / hole transport layer / organic electron transport Light emitting layer / interface layer / cathode Anode / organic hole transporting light emitting layer / organic electron transporting layer / interface layer / cathode Anode / hole transporting layer / organic electron transporting light emitting layer / interface layer / cathode anode / hole transporting Layer / organic electron-transporting light-emitting layer / electron-transporting layer / interface layer / cathode The thickness of the interface layer 4 is usually 1 to 100 nm, preferably 5 to 50 nm.
【0059】界面層4を形成する際、有機発光層又は電
子輸送層の成分を含む部分を設けて組成を段階的あるい
は連続的に変化させて界面層を設けてもよい。また、同
様に、陰極成分を含む成分を設けて組成を段階的あるい
は連続的に変化させて陰極を形成してもよい。界面層4
の上には陰極5が設けられる。陰極の役割は電子を効率
良く素子に注入することであるが、均一な発光を得るた
めに安定な膜で有ることが要求される。このような役割
を果たす材料として、銀を50原子%以上含有し、他の
物質との混合成分膜が好適であることを本発明者は見い
出した。銀と混合される他の物質としては、導電性の有
機化合物、樹脂、無機化合物等を用いることができる
が、好ましくは単体(元素)が用いられ、電子注入を妨
げないものならば特に限定されないが、好ましくは周期
律表のIIA族、IIIA族、IVA族、VIA族、V
IIA族、VIII族、IB族、IIB族、IIIB族
及びIVB族よりなる群から選ばれる元素が挙げられ、
更に好ましくはマグネシウム、カルシウム、ストロンチ
ウム、バリウム、スカンジウム、イットリウム、チタ
ン、アルミニウム、インジウム、錫、クロム、マンガ
ン、亜鉛及び金よりなる群から選ばれる元素が挙げられ
る。陰極は銀とこれらの元素の単なる混合物であって
も、或いは合金等であってもよく、その形態は問われな
い。またこれらの元素の2種類以上を銀と混合して陰極
として用いることも可能である。When the interface layer 4 is formed, a portion containing the components of the organic light emitting layer or the electron transport layer may be provided to change the composition stepwise or continuously to provide the interface layer. Similarly, a cathode may be formed by providing a component containing a cathode component and changing the composition stepwise or continuously. Interface layer 4
A cathode 5 is provided on top of the. The role of the cathode is to efficiently inject electrons into the device, but it is required to have a stable film in order to obtain uniform light emission. The present inventors have found that as a material that plays such a role, a mixed component film containing 50 atomic% or more of silver and mixed with another substance is suitable. As the other substance mixed with silver, a conductive organic compound, resin, inorganic compound or the like can be used, but a simple substance (element) is preferably used and is not particularly limited as long as it does not interfere with electron injection. Are preferably Group IIA, Group IIIA, Group IVA, Group VIA, V of the Periodic Table
An element selected from the group consisting of Group IIA, Group VIII, Group IB, Group IIB, Group IIIB and Group IVB,
More preferred is an element selected from the group consisting of magnesium, calcium, strontium, barium, scandium, yttrium, titanium, aluminum, indium, tin, chromium, manganese, zinc and gold. The cathode may be a simple mixture of silver and these elements, or may be an alloy or the like, and its form is not limited. It is also possible to mix two or more of these elements with silver and use them as a cathode.
【0060】本発明においては、以上のように、有機電
界発光素子における有機発光層/陰極間の界面層材料と
して、N−フェニルカルバゾール骨格を有する化合物を
用い、陰極として銀を50原子%以上含む混合膜を用い
ることにより、優れた素子の安定性が達成される。陰極
5の膜厚は通常、陽極2と同様である。また、図1には
示していないが、陰極5の上にさらに基板1と同様の基
板を設けることもできる。但し、陽極2と陰極5の少な
くとも一方は透明性の良いことがEL素子としては必要
である。このことから、陽極2と陰極5の一方は、通
常、10〜500nmの膜厚であることが好ましく、透
明性の良いことが望まれる。In the present invention, as described above, a compound having an N-phenylcarbazole skeleton is used as an interface layer material between the organic light emitting layer and the cathode in the organic electroluminescent element, and the cathode contains 50 atomic% or more of silver. By using the mixed film, excellent device stability is achieved. The film thickness of the cathode 5 is usually the same as that of the anode 2. Although not shown in FIG. 1, a substrate similar to the substrate 1 may be further provided on the cathode 5. However, it is necessary for the EL element that at least one of the anode 2 and the cathode 5 has good transparency. From this, it is preferable that one of the anode 2 and the cathode 5 usually has a film thickness of 10 to 500 nm and good transparency.
【0061】尚、図1とは逆の構造、すなわち、基板上
に陰極5、界面層4、有機発光層3、陽極2の順に積層
することも可能であり、既述したように少なくとも一方
が透明性の高い2枚の基板の間に本発明の有機電界発光
素子を設けることも可能である。同様に、図2及び図3
とは逆の構造に積層することも可能である。It is also possible to stack the cathode 5, the interface layer 4, the organic light-emitting layer 3 and the anode 2 in this order on the substrate in the opposite structure to that of FIG. It is also possible to provide the organic electroluminescent element of the present invention between two highly transparent substrates. Similarly, FIG. 2 and FIG.
It is also possible to stack in the opposite structure.
【0062】[0062]
【実施例】次に、本発明を実施例によって更に具体的に
説明するが、本発明はその要旨を越えない限り、以下の
実施例の記載に限定されるものではない。 実施例1 図2に示す構造を有する有機電界発光素子を以下の方法
で作製した。EXAMPLES Next, the present invention will be described more specifically by way of examples, but the present invention is not limited to the description of the following examples unless it exceeds the gist. Example 1 An organic electroluminescent device having the structure shown in FIG. 2 was produced by the following method.
【0063】ガラス基板上にインジウム・スズ酸化物
(ITO)透明導電膜を膜厚120nmに堆積したもの
をアセトンで超音波洗浄、純水で水洗、イソプロピルア
ルコールで超音波洗浄、乾燥窒素で乾燥、UV/オゾン
洗浄を行った後、真空蒸着装置内に設置して、装置内の
真空度が2×10-6Torr以下になるまで油拡散ポン
プを用いて排気した。An indium tin oxide (ITO) transparent conductive film deposited to a thickness of 120 nm on a glass substrate was ultrasonically washed with acetone, washed with pure water, washed with isopropyl alcohol and dried with dry nitrogen. After performing UV / ozone cleaning, it was installed in a vacuum vapor deposition apparatus and evacuated using an oil diffusion pump until the degree of vacuum in the apparatus became 2 × 10 −6 Torr or less.
【0064】有機正孔輸送層材料として、以下の構造式
で示す芳香族アミン化合物(H1)As an organic hole transport layer material, an aromatic amine compound (H1) represented by the following structural formula
【0065】[0065]
【化10】 [Chemical 10]
【0066】をセラミックるつぼに入れ、るつぼの周囲
のタンタル線ヒーターで加熱して蒸着を行った。この時
のるつぼの温度は、170〜180℃の範囲で制御し
た。蒸着時の真空度は1.5×10-6Torrで、蒸着
時間2分15秒で膜厚60nmの有機正孔輸送層3aを
得た。次に、有機電子輸送層3bの材料として、以下の
構造式に示すアルミニウムの8−ヒドロキシキノリン錯
体、Al(C9H6NO)3 (E1)[0066] was put in a ceramic crucible and heated by a tantalum wire heater around the crucible for vapor deposition. The temperature of the crucible at this time was controlled in the range of 170 to 180 ° C. The degree of vacuum during vapor deposition was 1.5 × 10 −6 Torr, and the vapor deposition time was 2 minutes and 15 seconds to obtain an organic hole transport layer 3a having a film thickness of 60 nm. Next, as a material for the organic electron transport layer 3b, an aluminum 8-hydroxyquinoline complex represented by the following structural formula, Al (C 9 H 6 NO) 3 (E1)
【0067】[0067]
【化11】 [Chemical 11]
【0068】を上記有機正孔輸送層3aの上に同様にし
て蒸着を行なった。この時のるつぼの温度は390〜4
00℃の範囲で制御した。蒸着時の真空度は7×10-7
Torr、蒸着時間は1分50秒、膜厚は75nmであ
った。この層は発光層としての役割を果たす。次に、界
面層4として、前述の表に示したN−フェニルカルバゾ
ール骨格を有する化合物(I−1)を有機電子輸送性発
光層3bの上に、有機正孔輸送層3aと同様にして蒸着
を行った。蒸着時の真空度は6×10-7Torr、蒸着
時間は1分30秒、膜厚は15nmであった。The above was vapor-deposited on the organic hole transport layer 3a in the same manner. The temperature of the crucible at this time is 390-4
Control was performed in the range of 00 ° C. The degree of vacuum during vapor deposition is 7 × 10 -7
Torr, vapor deposition time was 1 minute 50 seconds, and film thickness was 75 nm. This layer serves as a light emitting layer. Next, as the interface layer 4, the compound (I-1) having the N-phenylcarbazole skeleton shown in the above table is vapor-deposited on the organic electron transporting light emitting layer 3b in the same manner as the organic hole transporting layer 3a. I went. The degree of vacuum during vapor deposition was 6 × 10 −7 Torr, the vapor deposition time was 1 minute 30 seconds, and the film thickness was 15 nm.
【0069】最後に陰極として、銀とマグネシウムの合
金電極を2元同時蒸着法によって70nmの厚さに蒸着
した。蒸着はモリブデンボートを用いて、真空度は、1
×10-5Torr、蒸着時間は3分10秒で光沢のある
膜が得られた。陰極に含まれる銀とマグネシウムの原子
比は10:1.52であった(混合比[=陰極に含まれ
る銀以外の原子の割合]=13.2%)。Finally, as a cathode, an alloy electrode of silver and magnesium was vapor-deposited to a thickness of 70 nm by the binary vapor deposition method. Deposition is performed using a molybdenum boat, and the degree of vacuum is 1.
A glossy film was obtained at × 10 −5 Torr and a vapor deposition time of 3 minutes and 10 seconds. The atomic ratio of silver to magnesium contained in the cathode was 10: 1.52 (mixing ratio [= ratio of atoms other than silver contained in the cathode] = 13.2%).
【0070】このようにして作製した有機電界発光素子
のITO電極(陽極)にプラス、銀・マグネシウム合金
電極(陰極)にマイナスの直流電圧を印加して測定し
た。この素子は、10V印加時に2.1mA/cm2 の
電流密度が得られ、その時の輝度は78cd/m2 であ
った。 実施例2 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀とインジウムとを共蒸着法によっ
て150nmの厚さに蒸着した。この時の真空度は、6
×10-6Torrであり、蒸着時間は3分であった。ま
た、陰極に含まれる銀とインジウムの原子比は10:
0.85であった(混合比=7.9%)。Measurement was carried out by applying a positive DC voltage to the ITO electrode (anode) and a negative DC voltage to the silver-magnesium alloy electrode (cathode) of the organic electroluminescent device thus produced. A current density of 2.1 mA / cm 2 was obtained when 10 V was applied to this device, and the brightness at that time was 78 cd / m 2 . Example 2 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and indium were used as a cathode by a co-evaporation method. It was deposited to a thickness of 150 nm. The vacuum degree at this time is 6
It was × 10 -6 Torr, and the vapor deposition time was 3 minutes. The atomic ratio of silver to indium contained in the cathode is 10:
It was 0.85 (mixing ratio = 7.9%).
【0071】この素子は、15V印加時に2.8mA/
cm2 の電流密度が得られ、その時の輝度は90cd/
m2 であった。 実施例3 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀とスズを共蒸着法によって150
nmの厚さに蒸着した。この時の真空度は、7×10-6
Torrであり、蒸着時間は2分であった。また、陰極
に含まれる銀とスズの原子比は10:0.6であった
(混合比=5.7%)。This device is 2.8 mA /
A current density of cm 2 was obtained, and the brightness at that time was 90 cd /
m 2 . Example 3 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and tin were used as a cathode by a co-evaporation method to form 150 layers.
Evaporated to a thickness of nm. The degree of vacuum at this time is 7 × 10 -6
Torr, and the vapor deposition time was 2 minutes. The atomic ratio of silver and tin contained in the cathode was 10: 0.6 (mixing ratio = 5.7%).
【0072】この素子は、15V印加時に3.6mA/
cm2 の電流密度が得られ、その時の輝度は121cd
/m2 であった。 実施例4 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀とスズを共蒸着法によって150
nmの厚さに蒸着した。この時の真空度は、2×10-5
Torrであり、蒸着時間は4分30秒であった。ま
た、陰極に含まれる銀とスズの原子比は10:4.44
であった(混合比=30.8%)。This device has a voltage of 3.6 mA / V when a voltage of 15 V is applied.
A current density of cm 2 was obtained, and the brightness at that time was 121 cd.
/ M 2 . Example 4 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and tin were used as a cathode by a co-evaporation method to form 150
Evaporated to a thickness of nm. The vacuum degree at this time is 2 × 10 -5
Torr, and the vapor deposition time was 4 minutes and 30 seconds. The atomic ratio of silver and tin contained in the cathode is 10: 4.44.
Was (mixing ratio = 30.8%).
【0073】この素子は、18V印加時に4.2mA/
cm2 の電流密度が得られ、その時の輝度は91cd/
m2 であった。 実施例5 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀とマンガンを共蒸着法によって1
50nmの厚さに蒸着した。この時の真空度は、2×1
0-5Torrであり、蒸着時間は3分30秒であった。
また、陰極に含まれる銀とマンガンの原子比は10:
0.85であった(混合比=7.8%)。This element is 4.2 mA /
A current density of cm 2 was obtained, and the brightness at that time was 91 cd /
m 2 . Example 5 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and manganese were used as a cathode by a co-evaporation method.
It was deposited to a thickness of 50 nm. The degree of vacuum at this time is 2 × 1
It was 0 −5 Torr, and the vapor deposition time was 3 minutes and 30 seconds.
The atomic ratio of silver to manganese contained in the cathode is 10 :.
It was 0.85 (mixing ratio = 7.8%).
【0074】この素子は、15V印加時に3.5mA/
cm2 の電流密度が得られ、その時の輝度は85cd/
m2 であった。 実施例6 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀と亜鉛を共蒸着法によって150
nmの厚さに蒸着した。この時の真空度は、1×10-5
Torrであり、蒸着時間は2分30秒であった。ま
た、陰極に含まれる銀とマンガンの原子比は10:1.
98であった(混合比=16.6%)。This element is 3.5 mA /
A current density of cm 2 was obtained, and the brightness at that time was 85 cd /
m 2 . Example 6 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and zinc were used as a cathode by a co-evaporation method to form 150
Evaporated to a thickness of nm. The degree of vacuum at this time is 1 × 10 -5
Torr, and the vapor deposition time was 2 minutes and 30 seconds. The atomic ratio of silver to manganese contained in the cathode is 10: 1.
It was 98 (mixing ratio = 16.6%).
【0075】この素子は、14V印加時に3.0mA/
cm2 の電流密度が得られ、その時の輝度は94cd/
m2 であった。 実施例7 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀と亜鉛を共蒸着法によって240
nmの厚さに蒸着した。この時の真空度は、9×10-6
Torrであり、蒸着時間は2分であった。また、陰極
に含まれる銀と亜鉛の原子比は10:9.4であった
(混合比=48.4%)。This element has a voltage of 3.0 mA /
A current density of cm 2 was obtained, and the brightness at that time was 94 cd /
m 2 . Example 7 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and zinc were used as a cathode by a co-evaporation method.
Evaporated to a thickness of nm. The vacuum degree at this time is 9 × 10 -6
Torr, and the vapor deposition time was 2 minutes. The atomic ratio of silver to zinc contained in the cathode was 10: 9.4 (mixing ratio = 48.4%).
【0076】この素子は、19V印加時に4.3mA/
cm2 の電流密度が得られ、その時の輝度は113cd
/m2 であった。 比較例1 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀を膜厚120nmの厚さに蒸着し
た。真空度は、5×10-6Torr、蒸着時間は4分で
光沢のある膜が得られた。この素子は、10V印加時に
2.9mA/cm2 の電流密度が得られ、その時の輝度
は93cd/m2 であった。This device has a voltage of 4.3 mA / V when a voltage of 19 V is applied.
A current density of cm 2 was obtained, and the brightness at that time was 113 cd.
/ M 2 . Comparative Example 1 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver was used as a cathode to a thickness of 120 nm. It was vapor-deposited. A vacuum degree of 5 × 10 −6 Torr and a vapor deposition time of 4 minutes gave a glossy film. A current density of 2.9 mA / cm 2 was obtained when 10 V was applied to this element, and the brightness at that time was 93 cd / m 2 .
【0077】比較例2 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀とマグネシウムとを共蒸着法によ
り150nmの厚さに蒸着した。真空度は、5×10-6
Torr、蒸着時間は4分で光沢のある膜が得られた。
また、陰極に含まれる銀とマグネシウムの原子比は1
0:1.1であった(混合比=90.1%)。Comparative Example 2 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver and magnesium were used as a cathode. It was vapor-deposited to a thickness of 150 nm by the vapor deposition method. Vacuum degree is 5 × 10 -6
A glossy film was obtained with Torr and vapor deposition time of 4 minutes.
The atomic ratio of silver to magnesium contained in the cathode is 1
It was 0: 1.1 (mixing ratio = 90.1%).
【0078】この素子は、11V印加時に3.7mA/
cm2 の電流密度が得られ、その時の輝度は120cd
/m2 であった。実施例1〜7及び比較例1〜2で得ら
れた有機電界発光素子の特性を表−1に示す。This device was 3.7 mA / V when 11 V was applied.
A current density of cm 2 was obtained, and the brightness at that time was 120 cd.
/ M 2 . Table-1 shows the characteristics of the organic electroluminescent elements obtained in Examples 1 to 7 and Comparative Examples 1 and 2.
【0079】[0079]
【表16】 混合比:陰極に含まれる銀以外の元素の原子数の割合。 Vth[V]:輝度が1cd/m2 を越えるときの電圧。 η100[lm/W]:100cd/m2 発光時の効率。 L−Jの勾配[cd/A]:LとJを直線近似した時の傾き。[Table 16] Mixing ratio: The ratio of the number of atoms of elements other than silver contained in the cathode. Vth [V]: Voltage when the brightness exceeds 1 cd / m 2 . η100 [lm / W]: Efficiency at 100 cd / m 2 light emission. L-J slope [cd / A]: slope when L and J are linearly approximated.
【0080】また、これらの素子を乾燥窒素中で保存し
た時のダークスポットの変化の様子を表−2に示す。ダ
ークスポットの面積比は、CCDカメラで発光面を撮影
し、画像解析によって得られた値を示した。Table 2 shows how the dark spots change when these devices are stored in dry nitrogen. The area ratio of the dark spots is the value obtained by image analysis of the light emitting surface of the CCD camera.
【0081】[0081]
【表17】 [Table 17]
【0082】実施例8 実施例1と同様にして素子を作製した。この素子を電流
密度15mA/cm2の電流密度一定の条件で駆動し
た。この素子は緩やかに輝度が低下し、500時間後に
80cd/m2 であった。Example 8 An element was manufactured in the same manner as in Example 1. This device was driven under the condition that the current density was 15 mA / cm 2 and the current density was constant. The luminance of this element gradually decreased and was 80 cd / m 2 after 500 hours.
【0083】比較例3 実施例1と同様にして、ガラス基板上にITO透明導電
膜、有機正孔輸送層、有機電子輸送層有機層、界面層を
積層し、陰極として銀を120nmの厚さに蒸着した。
この素子を電流密度15mA/cm2 の電流密度一定の
条件で駆動した。この素子は200時間を過ぎたところ
で、輝度が急激に減少し、500時間後には20cd/
m2 まで減少した。実施例8及び比較例3の素子の輝度
の変化を図4に示す。Comparative Example 3 In the same manner as in Example 1, an ITO transparent conductive film, an organic hole transport layer, an organic electron transport layer organic layer, and an interface layer were laminated on a glass substrate, and silver was used as a cathode to a thickness of 120 nm. It was vapor-deposited on.
This device was driven under the condition that the current density was 15 mA / cm 2 and the current density was constant. The brightness of this device rapidly decreased after 200 hours, and after 500 hours, 20 cd /
It decreased to m 2 . FIG. 4 shows changes in luminance of the devices of Example 8 and Comparative Example 3.
【0084】[0084]
【発明の効果】本発明の有機電界発光素子によれば、陽
極、有機発光層、界面層、陰極が基板上に順次設けら
れ、しかも、界面層に特定の化合物を使用し、陰極とし
て銀の混合膜を使用しているため、長期に亙り、均一な
発光面を得ることができ、安定した発光特性を得ること
ができる。According to the organic electroluminescent device of the present invention, an anode, an organic light emitting layer, an interface layer and a cathode are sequentially provided on a substrate, and a specific compound is used in the interface layer, and a silver cathode is used as the cathode. Since the mixed film is used, a uniform light emitting surface can be obtained over a long period of time, and stable light emitting characteristics can be obtained.
【0085】従って、本発明のEL素子はフラットパネ
ル・ディスプレイ(例えばOAコンピュータ用や壁掛け
テレビ)の分野や面発光体としての特徴を生かした光源
(例えば、複写機の光源、液晶ディスプレイや計器類の
バックライト光源)、表示板、標識灯への応用が考えら
れ、その技術的価値は大きいものである。Therefore, the EL device of the present invention is used in the field of flat panel displays (for example, for OA computers and wall-mounted televisions) and light sources (for example, light sources for copiers, liquid crystal displays and instruments) that make the most of the characteristics as a surface light emitter. It can be applied to backlights, display boards, and marker lights, and its technical value is great.
【図1】本発明の有機電界発光素子の一例を示した模式
的な断面図。FIG. 1 is a schematic cross-sectional view showing an example of an organic electroluminescence device of the present invention.
【図2】本発明の有機電界発光素子の他の例を示した模
式的な断面図。FIG. 2 is a schematic cross-sectional view showing another example of the organic electroluminescent element of the present invention.
【図3】本発明の有機電界発光素子のその他の例を示し
た模式的な断面図。FIG. 3 is a schematic cross-sectional view showing another example of the organic electroluminescent element of the present invention.
【図4】実施例9と比較例3の素子を15mA/cm2
の定電流密度で駆動した時の輝度特性を示す図。FIG. 4 shows the devices of Example 9 and Comparative Example 3 at 15 mA / cm 2.
FIG. 6 is a diagram showing a luminance characteristic when driven at a constant current density of FIG.
1 基板 2 陽極 3 有機発光層 3a 正孔輸送層 3b 有機電子輸送層 3c 3bとは異なる化合物で構成される有機電子輸送
層 4 界面層 5 陰極DESCRIPTION OF SYMBOLS 1 Substrate 2 Anode 3 Organic light emitting layer 3a Hole transport layer 3b Organic electron transport layer 3c Organic electron transport layer 4c composed of a compound different from 3b 4 Interface layer 5 Cathode
Claims (4)
機発光層を設けてなる有機電界発光素子であって、有機
発光層と陰極との間にN−フェニルカルバゾール骨格を
有する化合物を含有する層が設けられており、陰極が銀
を50原子%以上含有する混合成分膜であることを特徴
とする有機電界発光素子。1. An organic electroluminescent device comprising an organic light emitting layer sandwiched between an anode and a cathode on a substrate, comprising a compound having an N-phenylcarbazole skeleton between the organic light emitting layer and the cathode. An organic electroluminescent device, comprising a layer containing the cathode, and the cathode being a mixed component film containing 50 atomic% or more of silver.
化合物が下記一般式(I)又は(II)で示される化合
物である請求項1に記載の有機電界発光素子。 【化1】 (式中、Ar1 及びAr2 は、少なくとも1つが下記一
般式(III)で表されるN−フェニルカルバゾール骨
格を有する基を表し、N−フェニルカルバゾール骨格を
有する基でない場合は、窒素原子及び少なくとも3個の
芳香族環を有する基を表し、Xはアルキレン基、シクロ
アルキレン基、アルケニレン基、置換基を有してもよい
アリーレン基又は直接結合を表す。) 【化2】 (式中、R1 乃至R12は、各々独立して、水素原子、ニ
トロ基、シアノ基、ハロゲン原子、水酸基、置換基を有
していてもよい飽和あるいは不飽和の脂肪族炭化水素
基、置換基を有していてもよい芳香族炭化水素基、置換
基を有していてもよいアルコキシ基、置換基を有してい
てもよいアリールオキシ基、アミノ基、置換基を有して
いてもよいジアルキルアミノ基、又は置換基を有してい
てもよいジアリールアミノ基を表し、R4 及びR5 、R
5 及びR6 、R7 及びR8 、R8 及びR9 は、それぞれ
互いに結合して芳香族環を形成してもよい。) 【化3】 (式中、Ar3 、Ar4 及びAr5 は、各々独立して、
少なくとも1つが前記一般式(III)で表されるN−
フェニルカルバゾール骨格を有する基を表し、N−フェ
ニルカルバゾール骨格でない場合は、窒素原子及び少な
くとも3個の芳香族環を有する基を表し、Yは3価の芳
香族環、3価のシクロアルキル環又は窒素原子を表
す。)2. The organic electroluminescent device according to claim 1, wherein the compound having an N-phenylcarbazole skeleton is a compound represented by the following general formula (I) or (II). Embedded image (In the formula, at least one of Ar 1 and Ar 2 represents a group having an N-phenylcarbazole skeleton represented by the following general formula (III), and when it is not a group having an N-phenylcarbazole skeleton, a nitrogen atom and Represents a group having at least three aromatic rings, and X represents an alkylene group, a cycloalkylene group, an alkenylene group, an arylene group which may have a substituent, or a direct bond. (In the formula, R 1 to R 12 are each independently a hydrogen atom, a nitro group, a cyano group, a halogen atom, a hydroxyl group, a saturated or unsaturated aliphatic hydrocarbon group which may have a substituent, An aromatic hydrocarbon group which may have a substituent, an alkoxy group which may have a substituent, an aryloxy group which may have a substituent, an amino group, which has a substituent Represents a dialkylamino group which may be substituted or a diarylamino group which may have a substituent, R 4 and R 5 , R
5 and R 6 , R 7 and R 8 , R 8 and R 9 may be bonded to each other to form an aromatic ring. ) [Chemical 3] (In the formula, Ar 3 , Ar 4 and Ar 5 are each independently
At least one is represented by the general formula (III) N-
Represents a group having a phenylcarbazole skeleton, and when it is not an N-phenylcarbazole skeleton, represents a group having a nitrogen atom and at least three aromatic rings, Y represents a trivalent aromatic ring, a trivalent cycloalkyl ring or Represents a nitrogen atom. )
A族、IIIA族、IVA族、VIA族、VIIA族、
VIII族、IB族、IIB族、IIIB族及びIVB
族よりなる群から選ばれる元素である請求項1に記載の
有機電界発光素子。3. The substance mixed with silver is II of the periodic table.
Group A, Group IIIA, Group IVA, Group VIA, Group VIIA,
Group VIII, Group IB, Group IIB, Group IIIB and IVB
The organic electroluminescent element according to claim 1, which is an element selected from the group consisting of the group.
ルシウム、ストロンチウム、バリウム、スカンジウム、
イットリウム、チタン、アルミニウム、インジウム、
錫、クロム、マンガン、亜鉛及び金よりなる群から選ば
れる元素である請求項1に記載の有機電界発光素子。4. The substance mixed with silver is magnesium, calcium, strontium, barium, scandium,
Yttrium, titanium, aluminum, indium,
The organic electroluminescent element according to claim 1, which is an element selected from the group consisting of tin, chromium, manganese, zinc and gold.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6220343A JPH0888083A (en) | 1994-09-14 | 1994-09-14 | Organic electric field light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6220343A JPH0888083A (en) | 1994-09-14 | 1994-09-14 | Organic electric field light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0888083A true JPH0888083A (en) | 1996-04-02 |
Family
ID=16749664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6220343A Pending JPH0888083A (en) | 1994-09-14 | 1994-09-14 | Organic electric field light-emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0888083A (en) |
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